Photonic crystal laser in-plane emission device, and emission method and system thereof

Abstract

The invention provides a photonic crystal laser in-plane emission device, an emission method and a system thereof, and in-plane emission of laser is realized through a method of deducing a wave vector relationship. According to the in-plane emitting device based on the photonic crystal, the adaptability of the in-plane emitting device in an optical system is improved, and the integration capacity of a photonic device is enhanced. The material can be applied to traditional semiconductor materials and two-dimensional semiconductor materials, and can also be expanded to new photonic crystal materials such as dielectric materials, polymer materials, metal or plasmon materials, artificial metamaterials and the like, so that the wide application, the integration level and the light field regulation and control capability of an in-plane emission device are improved, more efficient in-plane laser emission is realized, and the in-plane laser emission efficiency is improved. And a new idea is provided for high-density photon integration.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor lasers, specifically relating to a photonic crystal laser in-plane emission device, its emission method and system. Background Technology

[0002] Surface-emitting lasers (SELs) of photonic crystals have wide applications in optical chips, optical communications, autonomous driving, and optical networks due to their high power, single-mode operation, high collimation, and high beam quality. However, most SELs emit laser light at a certain angle, making in-plane emission difficult. This limitation reduces the adaptability of the laser in optical systems and affects its application in integrated photonic devices. Therefore, a new design concept is urgently needed to enable in-plane emission of lasers of any wavelength, improve the coupling efficiency of optical systems, and achieve high-density photonic integration. Summary of the Invention

[0003] Therefore, the purpose of this invention is to overcome the deficiencies in the prior art and provide a photonic crystal laser in-plane emission device, its emission method and system.

[0004] Before describing the content of this invention, the following terms are defined as follows:

[0005] The term "first Brillouin zone boundary" refers to the classification of electronic states of a solid according to their wave vectors in band theory. Taking a reciprocal lattice point as the origin and constructing the perpendicular bisectors of all reciprocal lattice vectors, the reciprocal lattice is divided into a series of regions by these surfaces; these regions are called Brillouin zones. The closed region enclosed by the set of surfaces closest to the origin is called the first Brillouin zone.

[0006] The term "reciprocal lattice vector" refers to the wave vector K in the Bloch function, which is a quantity that characterizes the state of an electron. Different K values ​​represent different states, thus K also acts as a quantum number. The two states are represented by k and k' = k + kn. In the formula, kn = n1b1 + n2b2 + n3b3 is called the reciprocal lattice vector.

[0007] The term "optical system" refers to a collection of functional devices or structures capable of generating, modulating, transmitting, converting, or detecting optical signals. This primarily includes, but is not limited to, laser emitting modules, beam shaping systems, waveguide couplers, integrated photonic chips, optical communication components, interferometry systems, and optical sensing platforms. Such systems typically contain components such as lasers, lenses, optical microstructures (e.g., photonic crystals, waveguides, microcavities), detectors, and modulators. Their function is to precisely control the laser, including its propagation direction, mode characteristics, power distribution, and coupling efficiency, thereby enabling the efficient utilization and transmission of laser signals in free space or on an integrated platform.

[0008] The term "photonic integrated system" refers to a system that integrates multiple photonic functional units (such as lasers, modulators, detectors, filters, waveguides, optical switches, beam splitters, etc.) in a compact and efficient manner on a single chip or package platform, enabling multi-functional collaborative operation of optical signal generation, modulation, transmission, processing, and detection. Through optical interconnection and structural integration design, this system significantly improves the integration level of photonic devices and the miniaturization level of the system, and is widely used in on-chip optical communication, optical computing, optical sensing, and quantum information processing. The core of a photonic integrated system lies in the ability of multiple devices to work collaboratively. Its structure typically relies on high-precision micro-nano fabrication techniques and high refractive index contrast material systems to achieve low-loss, high-coupling-efficiency, and high-bandwidth-density optical functional integration.

[0009] The term "target laser" refers to the lasing wavelength range and emission characteristics set according to the laser output parameters required for a specific application scenario. This typically includes, but is not limited to, preset physical parameters such as center wavelength, wavelength bandwidth, emission directionality, and laser mode. This "target laser," as an input condition in the design method of this invention, guides the selection of the photonic crystal lattice constant and structural optimization, thereby achieving the desired in-plane laser emission behavior.

[0010] The term "π" refers to Archimedes' constant, also known as Pi.

[0011] The term "thulium-doped YAP" refers to a laser gain medium in which thulium ions are incorporated into a yttrium aluminum perovskite crystal.

[0012] The term "erbium-doped YAG" refers to a laser gain medium in which erbium ions are incorporated into a yttrium aluminum garnet crystal.

[0013] The term "YAG ceramics" refers to ceramics with the chemical formula Y3Al5O. 12 Laser ceramics.

[0014] The term "Y2O3 ceramics" refers to laser ceramics with the chemical formula Y2O3.

[0015] The term "LuAG ceramics" refers to ceramics with the chemical formula Lu3Al5O. 12 Laser ceramics.

[0016] The term "Rhodamine class" refers to: Rhodamine dyes, fluorescent dyes based on the xanthene skeleton, containing carboxyl or amino substituents in the molecule, and exhibiting strong fluorescence and high molar absorptivity.

[0017] The term "Rhodamine 6G" refers to a yellow-green fluorescent (λ≈560nm) staining agent containing a carboxyl / amino oxanthracene structure, also known as Rhodamine 6G.

[0018] The term "Rhodamine B" refers to an orange-red fluorescent (λ≈625nm) staining agent containing a carboxyl / amino oxanthracene structure, also known as Rhodamine B.

[0019] The term "coumarin dyes" refers to coumarin dyes, which are fluorescent dyes with benzopyranone (coumarin) as the parent nucleus.

[0020] The term "Coumarin 480" refers to a blue fluorescent dye (λ≈480nm) with benzopyranone as the parent nucleus.

[0021] The term "Coumarin 540A" refers to a green-emitting dye (λ≈540nm) with benzopyranone as its parent nucleus.

[0022] The term "Stilbene class" refers to compounds containing a stilbene skeleton, dyes exhibiting cis-trans isomerism and ultraviolet-blue light emission.

[0023] The term "Perylene Red" refers to a dye with red fluorescence and excellent photostability, which is a polycyclic aromatic hydrocarbon derivative with perylene as its core.

[0024] The term "MXene" refers to a class of two-dimensional (2D) inorganic compound materials composed of transition metal carbides, nitrides, or carbonitrides, which have a unique layered structure and excellent physicochemical properties.

[0025] The term "XeCl" refers to the excimer laser working medium formed by xenon and chlorine gases, which can be used to generate laser output with a wavelength of approximately 308 nm.

[0026] The term "F2-Ar" refers to a mixture of fluorine molecules and argon gas, used as the working medium for excimer lasers (such as F2 lasers) that can emit deep ultraviolet laser light with a wavelength of 157 nm.

[0027] The term "cesium lead bromide perovskite" refers to cesium lead bromide (CsPbBr3) perovskite, an inorganic halide compound with a perovskite crystal structure (ABX3 type), wherein the A-site is a cesium ion (Cs). + The B site is occupied by a lead ion (Pb). 2+ The X-position is a bromide ion (Br). - This material has excellent photoelectric properties and is often used in optoelectronic devices such as photovoltaic cells and light-emitting diodes.

[0028] To achieve the above objectives, a first aspect of the present invention provides a photonic crystal laser in-plane emission device, the photonic crystal laser in-plane emission device comprising:

[0029] Pump light used to excite or activate the photonic crystal; and

[0030] An optical microcavity used to control the propagation direction of a light beam and select the frequency of the amplified stimulated emission light.

[0031] The optical microcavity includes a photonic crystal with a periodic structure, and the target lasing mode of the optical microcavity is located at the boundary of the first Brillouin zone.

[0032] According to a first aspect of the photonic crystal laser in-plane emitting device, the photonic crystal laser in-plane emitting device further includes a gain medium located on the surface or inside the optical microcavity; wherein...

[0033] The gain medium is used to provide optical amplification and is excited or activated by the pump light; and / or

[0034] The gain medium can also be extended in length by the optical microcavity.

[0035] According to the first aspect of the present invention, the photonic crystal laser in-plane emitting device is wherein the lattice constant of the photonic crystal and the lasing wavelength of the target laser are designed to satisfy the following calculation formula (1):

[0036]

[0037] Where a is the lattice constant of the photonic crystal, and λ lasing The wavelength of the target laser is lasing.

[0038] According to a first aspect of the photonic crystal laser in-plane emitting device, the lattice constant of the photonic crystal and the lasing wavelength of the target laser are designed to further satisfy the following calculation formula:

[0039] a) The formula for calculating the reciprocal lattice vector of the lattice constant of the photonic crystal is shown in equation (2):

[0040]

[0041] Where a is the lattice constant of the photonic crystal, G is the reciprocal lattice vector of the lattice constant of the photonic crystal, and π is the Archimedes constant;

[0042] b) The target lasing mode of the optical microcavity is located at the boundary of the first Brillouin zone, k cavity The calculation formula is shown in equation (3):

[0043]

[0044] Among them, k cavity The mode wave vector of the first Brillouin zone boundary;

[0045] c) The formula for calculating the lasing wave vector of the target laser wavelength is shown in equation (4):

[0046]

[0047] Among them, k lasing The lasing wave vector of the target laser.

[0048] According to the first aspect of the photonic crystal laser in-plane emitting device of the present invention, wherein when k lasing =k cavity At that time, that is, If the above formula (1) is satisfied, in-plane emission can be achieved according to formula (1).

[0049] According to a first aspect of the photonic crystal laser in-plane emitting device, wherein

[0050] The pump light source is selected from one or more of the following: semiconductor laser, ultrafast laser, solid-state laser, fiber laser, tunable laser, gas laser, dye laser, laser diode, preferably selected from one or more of the following: semiconductor laser, ultrafast laser, solid-state laser, fiber laser, tunable laser, more preferably semiconductor laser or ultrafast laser.

[0051] The photonic crystal is a one-dimensional photonic crystal and / or a two-dimensional photonic crystal; and / or

[0052] The material of the gain medium is selected from one or more of the following: semiconductor gain material, two-dimensional gain material, doped crystal gain material, doped glass gain material, optical fiber gain material, dye-based gain material, gas or vapor gain medium, ceramic gain medium, polymer gain material, nanostructure gain material, and amorphous gain medium.

[0053] Preferably, the semiconductor gain material is selected from one or more of the following: III-V compound semiconductors, II-VI materials, wide-bandgap oxides, silicon-based materials, quantum well structure semiconductor gain bodies, and quantum dot structure semiconductor gain bodies; more preferably, it is selected from one or more of the following: GaAs, InP, AlGaAs, InGaAs, GaN, AlN, ZnSe, CdSe, ZnS, ZnO, Si, and SiGe.

[0054] Preferably, the two-dimensional gain material is selected from one or more of the following: transition metal sulfides, black phosphorus, boron nitride, MXene, graphene and its derivatives, two-dimensional perovskite films, and two-dimensional quantum dot materials. More preferably, the transition metal sulfides are selected from one or more of the following: MoS2, WS2, MoSe2, and WSe2.

[0055] Preferably, the doped crystal gain material is selected from one or more of the following: neodymium-doped yttrium aluminum garnet, neodymium-doped yttrium vanadate, ytterbium-doped aluminum garnet, thulium-doped YAP, erbium-doped YAG, chromium-doped zinc selenide, chromium-doped zinc sulfur, chromium-doped sapphire, and titanium-doped sapphire.

[0056] Preferably, the doped glass gain material is selected from one or more of the following: neodymium-doped phosphate glass, neodymium-doped silicate glass, ytterbium-doped glass, erbium-doped glass, bismuth-doped glass, holmium-doped glass, thulium-doped glass, and rare earth fluoride glass;

[0057] Preferably, the fiber gain material is selected from one or more of the following: neodymium-doped fiber, ytterbium-doped fiber, erbium-doped fiber, thulium-doped fiber, holmium-doped fiber, double-clad fiber, and passive-active coupled fiber;

[0058] Preferably, the dye-based gain material is selected from one or more of the following: Rhodamine, Coumarin, Perylene Red, Stilbene, and small organic molecule excitation materials; more preferably, it is selected from one or more of the following: Rhodamine 6G, Rhodamine B, Coumarin 480, Coumarin 540A, and Perylene Red.

[0059] Preferably, the gas or vapor gain medium is selected from one or more of the following: helium-neon mixed gas, nitrogen, carbon dioxide, metal vapor, rare gas ions, excimer laser gas mixture; more preferably, it is selected from one or more of the following: helium-neon mixed gas, nitrogen, carbon dioxide, copper vapor, gold vapor, mercury vapor, argon ions, krypton ions, F2-Ar, XeCl.

[0060] Preferably, the ceramic gain medium is a laser ceramic doped with one or more ions selected from the following: Nd 3+ Yb 3+ Er 3+ Tm 3+ Ho 3+ Cr 4+ Pr 3+ The laser ceramic is more preferably selected from one or more of the following: YAG ceramic, Y2O3 ceramic, and LuAG ceramic;

[0061] Preferably, the polymer gain material is selected from one or more of the following: dye-doped polymer films, organic polymer laser materials, and organic-inorganic hybrid gain materials;

[0062] Preferably, the nanostructure gain material is selected from one or more of the following: quantum dots, nanorods, nanowires, superlattice materials, and metal / dielectric hybrid gain structures; more preferably, the quantum dots are selected from one or more of the following: CdSe, PbS, InP; and / or

[0063] Preferably, the amorphous gain medium is selected from one or more of the following: amorphous oxide, amorphous silicon, and amorphous nitride.

[0064] A second aspect of the present invention provides a method for in-plane emission of laser light from a photonic crystal, the method comprising: using an in-plane laser emission apparatus for a photonic crystal according to the first aspect to achieve in-plane emission of the target laser light.

[0065] A third aspect of the present invention provides an optical system comprising the photonic crystal laser in-plane emitting device described in the first aspect;

[0066] Preferably, the optical system is selected from one or more of the following: collimation system, beam expander, nonlinear optical system, interference system, filter system, spectral selection system, micro-nano optical system, laser feedback mirror group, spatial light modulator, deformable mirror, optical communication system, integrated photonic chip system, tunable laser source system, in-plane laser-coupled waveguide array, bio-optical detection system, lidar system, chip-level laser exposure or laser processing platform, quantum optical measurement system, and high-density photonic switch array.

[0067] A fourth aspect of the present invention provides a photonic integrated system, the photonic integrated system comprising the photonic crystal laser in-plane emitting device described in the first aspect;

[0068] Preferably, the photonic integrated system further includes one or more functional modules selected from the following: a light source module, a modulation module, a waveguide module, a coupling module, a detection module, a filtering and wave division module, a switching and routing module, a nonlinear device module, a feedback control module, an on-chip lasing structure module, an on-chip resonant cavity structure, an on-chip integrated laser, a quantum photonics module, and a photothermal control module.

[0069] According to the optical system of the third aspect or the photonic integrated system of the fourth aspect of the present invention, the photonic crystal material is selected from one or more of the following: semiconductor photonic crystal materials, dielectric photonic crystal materials, polymer photonic crystal materials, metal or plasmonic photonic crystal materials, artificial metamaterials and their composite photonic crystal materials;

[0070] Preferably, the semiconductor photonic crystal material is selected from one or more of the following: group III-V compound semiconductors, perovskite structure semiconductors, group II-VI compound semiconductors, silicon, germanium, and silicon nitride; more preferably, it is selected from one or more of the following: gallium arsenide, indium phosphide, gallium nitride, gallium aluminum arsenide, indium gallium arsenide, indium gallium phosphide, aluminum indium arsenide, cesium lead bromide perovskite, zinc sulfide, zinc selenide, cadmium telluride, silicon, germanium, and silicon nitride.

[0071] Preferably, the dielectric photonic crystal material is selected from one or more of the following: silicon dioxide, aluminum oxide, titanium dioxide, zirconium oxide, and calcium fluoride;

[0072] Preferably, the polymer photonic crystal material is selected from one or more of the following: polymethyl methacrylate, polyethylene terephthalate, photoresist, and liquid crystal polymer;

[0073] Preferably, the metal or plasmonic photonic crystal material is selected from one or more of the following: silver, gold, copper, aluminum, indium tin oxide; and / or

[0074] Preferably, the artificial metamaterial and its composite photonic crystal material are selected from one or more of the following: metal-dielectric periodic structure materials, metasurface component materials, and nanostructure composite materials.

[0075] According to a preferred embodiment of the present invention, the present invention provides a design method for an in-plane emitting laser based on a photonic crystal structure, which realizes in-plane laser emission by calculating the relationship between the lattice constant of the photonic crystal and the target lasing wavelength.

[0076] The method of the present invention includes the following steps:

[0077] 1. Set the target laser wavelength: Determine the wavelength range of the target laser according to the application requirements.

[0078] 2. Design of photonic crystal lattice constant: The target lasing mode of the optical microcavity is simulated theoretically, and the lattice constant of the photonic crystal is confirmed by calculating the wave vector relationship between the mode and the target laser, thereby realizing in-plane emission.

[0079] Through the above method, the present invention can realize the design of in-plane emitting lasers based on photonic crystals, improve their adaptability in optical systems, and enhance the integration capability of photonic devices.

[0080] According to another preferred embodiment of the present invention, the in-plane emission laser design method based on photonic crystal structure includes the following steps:

[0081] (1) Set the target lasing wavelength;

[0082] (2) Design the lattice constant of the photonic crystal to match the target lasing wavelength, thereby satisfying the in-plane emission condition.

[0083] The optical microcavity of the laser is a photonic crystal with a periodic structure, and the target lasing mode of the optical microcavity is located at the boundary of the first Brillouin zone.

[0084] In the calculation process, any desired laser wavelength is set as the target lasing wavelength according to application requirements.

[0085] The lattice constant of the photonic crystal structure must be matched with the target lasing wavelength.

[0086] The laser design method described above can be applied not only to traditional semiconductor materials and two-dimensional semiconductor materials, but also to new photonic crystal materials such as dielectric materials, polymer materials, metals or plasmonic materials, and artificial metamaterials, so as to improve the wide application, integration and optical field control capability of in-plane emitting lasers.

[0087] According to another preferred embodiment of the present invention, the photonic crystal laser in-plane emission device of the present invention includes: a pump light, an optical microcavity, and a gain medium;

[0088] The gain medium is used to provide an energy level structure for optical amplification and for activating particles to produce stimulated emission.

[0089] The pump light is used to excite or activate the gain medium to bring it to stimulated emission conditions.

[0090] The optical microcavity is used to increase the working length of the gain medium, control the propagation direction of the beam, and select the frequency of the amplified stimulated emission light to improve monochromaticity.

[0091] Preferably, the photonic crystal laser in-plane emitting device of the present invention can also be applied to photonic integrated systems;

[0092] The photonic integrated system is further preferably composed of one or more functional modules selected from the following: a light source module, a modulation module, a waveguide module, a coupling module, a detection module, a filtering and demultiplexing module, a switching and routing module, a nonlinear device module, a feedback control module, an on-chip lasing structure module, an on-chip resonant cavity structure, an on-chip integrated laser, a quantum photonics module, and a photothermal control module.

[0093] The photonic integrated system can be further constructed on one or more of the following integrated platforms: silicon-based photonic integrated platform, silicon nitride photonic platform, silicon-on-insulator platform, III-V semiconductor heterogeneous integrated platform, silicon-based / III-V hybrid integrated platform, polymer photonic platform, thin-film lithium niobate platform, two-dimensional material photonic platform, integrated plasmon platform, microring resonator array platform, photonic crystal structure platform, etc.; the photonic integrated system is used in one or more of the following application scenarios: high-speed optical communication system, tunable on-chip laser system, integrated spectral analysis platform, optical artificial intelligence computing chip, quantum information processing chip, biomolecular optical detection chip, on-chip interferometry platform, lasing display chip system, integrated light field modulation system, lidar transceiver chip, neuromorphic optical computing chip.

[0094] Compared with the prior art, the photonic crystal laser in-plane emission device, emission method and system of the present invention may have the following beneficial effects, but are not limited to:

[0095] 1. The in-plane emission device design based on photonic crystal of the present invention improves its adaptability in optical systems and enhances the integration capability of photonic devices.

[0096] 2. The photonic crystal laser in-plane emission device, its emission method and system of the present invention can be applied not only to traditional semiconductor materials and two-dimensional semiconductor materials, but also to new photonic crystal materials such as dielectric materials, polymer materials, metals or plasmonic materials, artificial metamaterials, etc., so as to improve the wide application, integration and light field control capability of the in-plane emission device, realize more efficient in-plane laser emission, and provide new ideas for high-density photonic integration. Attached Figure Description

[0097] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings, wherein:

[0098] Figure 1 The wave vector relationship between the wave vector of a photonic crystal microcavity and the lasing wave vector is shown; where k cavity Let k be the mode wave vector of the first Brillouin zone boundary; lasing k is the lasing wave vector of the target laser. z This represents the wave vector component of the target laser in the vertical plane.

[0099] Figure 2 A schematic diagram of an in-plane emitting laser structure with a one-dimensional photonic crystal microcavity using the photonic crystal material itself as the gain medium is shown.

[0100] Figure 3 A schematic diagram of an in-plane emitting laser structure with a material other than the photonic crystal as the gain medium is shown.

[0101] Figure 4 A schematic diagram of an in-plane emitting laser structure with a two-dimensional photonic crystal microcavity using the photonic crystal material itself as the gain medium is shown.

[0102] Figure 5 A schematic diagram of an in-plane emitting laser structure with a two-dimensional photonic crystal microcavity using a material other than the photonic crystal as the gain medium is shown.

[0103] Explanation of reference numerals in the attached figures:

[0104] 1. Pump light; 2. Gain medium; 3. Photonic crystal microcavity; 4. Target laser. Detailed Implementation

[0105] The present invention will be further described below with reference to the accompanying drawings and specific embodiments. However, it should be understood that these embodiments are merely for more detailed and specific explanation and should not be construed as limiting the present invention in any way.

[0106] This section provides a general description of the materials and testing methods used in the experiments of this invention. While many of the materials and methods of operation used to achieve the objectives of this invention are well known in the art, the invention is still described in as much detail as possible herein. It will be apparent to those skilled in the art that, unless otherwise stated in the context, the materials and methods of operation used in this invention are well known in the art.

[0107] Example 1

[0108] This embodiment is an exemplary description of the photonic crystal laser in-plane emission device and emission method of the present invention.

[0109] like Figure 2 As shown, the in-plane photonic crystal laser emission device of the present invention includes: a pump beam 1, a gain medium 2, a photonic crystal microcavity 3, and a target laser 4. In this embodiment, the pump beam is exemplified by a semiconductor laser, the photonic crystal microcavity by a one-dimensional photonic crystal (specifically, gallium arsenide as the semiconductor photonic crystal material), and the gain medium by the one-dimensional photonic crystal itself. The target lasing mode of the optical microcavity is located at the boundary of the first Brillouin zone.

[0110] In this embodiment, the formula for calculating the lattice constant of the one-dimensional photonic crystal and the lasing wavelength of the target laser is taken as Equation (1):

[0111]

[0112] Where a is the lattice constant of the one-dimensional photonic crystal, and λ lasing The wavelength of the target laser is lasing.

[0113] The lattice constant of a one-dimensional photonic crystal is a, and its reciprocal lattice vector is...

[0114]

[0115] Where a is the lattice constant of the one-dimensional photonic crystal, G is the reciprocal lattice vector of the lattice constant of the one-dimensional photonic crystal, and π is pi, also known as Archimedes' constant.

[0116] The target lasing mode of the optical microcavity is located at the boundary of the first Brillouin zone, as determined by simulation.

[0117]

[0118] Among them, k cavity Let be the modal wave vector of the first Brillouin zone boundary.

[0119] The target's lasing wavelength is λ lasing Its maser wave vector

[0120]

[0121] Among them, k lasing The lasing wave vector of the target laser.

[0122] like Figure 1 As shown, when k lasing >k cavity At that time, the laser will be emitted at a certain angle. Therefore, to achieve in-plane emission, k is required. lasing =k cavity .

[0123] From formulas (3) and (4), we can deduce that

[0124]

[0125] That is, when the lattice constant of a one-dimensional photonic crystal is half the target lasing wavelength, the laser is emitted in-plane.

[0126] Calculation results show that the in-plane emission device design method based on photonic crystal structure of the present invention can efficiently determine the lattice constant of the photonic crystal used as the optical microcavity of the device to achieve in-plane emission, thereby significantly improving the coupling efficiency and on-chip integration of the optical system.

[0127] The laser in-plane emission method of the present invention optimizes the lattice constant of the photonic crystal by deriving the wave vector relationship, so that the target lasing mode of the optical microcavity obtained by theoretical simulation meets the requirements of in-plane emission, thereby realizing the in-plane emission of laser.

[0128] The photonic crystal structure of this invention is not only applicable to traditional semiconductor materials and two-dimensional semiconductor materials, but can also be extended to new photonic crystal materials such as dielectric materials, polymer materials, metals or plasmonic materials, artificial metamaterials, etc., to achieve more efficient in-plane laser emission and provide new ideas for high-density photonic integration.

[0129] Example 2

[0130] This embodiment is another exemplary description of the photonic crystal laser in-plane emission device and emission method of the present invention.

[0131] like Figure 3 As shown, the in-plane photonic crystal laser emission device of the present invention includes: a pump beam 1, a gain medium 2, a photonic crystal microcavity 3, and a target laser 4. In this embodiment, the pump beam is exemplified by a semiconductor laser, the photonic crystal microcavity by a one-dimensional photonic crystal (specifically, a metal or plasmonic photonic crystal material of silver), and the gain medium by a two-dimensional gain material WS2 other than the photonic crystal material. The target lasing mode of the optical microcavity is located at the boundary of the first Brillouin zone.

[0132] In this embodiment, the following calculations are performed using formulas (1)-(4) from Embodiment 1:

[0133] The formula for calculating the lattice constant of the one-dimensional photonic crystal and the lasing wavelength of the target laser is taken as an example by equation (1):

[0134]

[0135] Where a is the lattice constant of the one-dimensional photonic crystal, and λ lasing The wavelength of the target laser is lasing.

[0136] The lattice constant of a one-dimensional photonic crystal is a, and its reciprocal lattice vector is...

[0137]

[0138] Where a is the lattice constant of the one-dimensional photonic crystal, G is the reciprocal lattice vector of the lattice constant of the one-dimensional photonic crystal, and π is pi, also known as Archimedes' constant.

[0139] The target lasing mode of the optical microcavity is located at the boundary of the first Brillouin zone, as determined by simulation.

[0140]

[0141] Among them, k cavity Let be the modal wave vector of the first Brillouin zone boundary.

[0142] The target's lasing wavelength is λ lasing Its maser wave vector

[0143]

[0144] Where, k lasing The lasing wave vector of the target laser.

[0145] When k lasing >k cavity At that time, the laser will be emitted at a certain angle. Therefore, to achieve in-plane emission, k is required. lasing =k cavity .

[0146] From formulas (3) and (4), we can deduce that

[0147]

[0148] That is, when the lattice constant of a one-dimensional photonic crystal is half the target lasing wavelength, the laser is emitted in-plane.

[0149] Example 3

[0150] This embodiment is yet another exemplary description of the photonic crystal laser in-plane emission device and emission method of the present invention.

[0151] like Figure 4 As shown, the in-plane photonic crystal laser emission device of the present invention includes: a pump beam 1, a gain medium 2, a photonic crystal microcavity 3, and a target laser 4. In this embodiment, the pump beam is exemplified by a semiconductor laser, the photonic crystal microcavity by a two-dimensional photonic crystal (specifically, the semiconductor photonic crystal material is cesium lead bromide perovskite), and the gain medium by the two-dimensional photonic crystal material itself. The target lasing mode of the optical microcavity is located at the boundary of the first Brillouin zone.

[0152] In this embodiment, the following calculations are performed using formulas (1)-(4) from Embodiment 1:

[0153] The formula for calculating the lattice constant of the two-dimensional photonic crystal and the lasing wavelength of the target laser is taken as an example by equation (1):

[0154]

[0155] Where a is the lattice constant of the two-dimensional photonic crystal, and λ lasing The wavelength of the target laser is lasing.

[0156] The lattice constant of a two-dimensional photonic crystal is a, and its reciprocal lattice vector is...

[0157]

[0158] Where a is the lattice constant of the two-dimensional photonic crystal, G is the reciprocal lattice vector of the lattice constant of the two-dimensional photonic crystal, and π is pi, also known as Archimedes' constant.

[0159] The target lasing mode of the optical microcavity is located at the boundary of the first Brillouin zone, as determined by simulation.

[0160]

[0161] Among them, k cavity Let be the modal wave vector of the first Brillouin zone boundary.

[0162] The target's lasing wavelength is λ lasing Its maser wave vector

[0163]

[0164] Among them, k lasing The lasing wave vector of the target laser.

[0165] When k lasing >k cavity At that time, the laser will be emitted at a certain angle. Therefore, to achieve in-plane emission, k is required. lasing =k cavity .

[0166] From formulas (3) and (4), we can deduce that

[0167]

[0168] That is, when the lattice constant of the two-dimensional photonic crystal is half the target lasing wavelength, the laser is emitted in-plane.

[0169] Example 4

[0170] This embodiment is yet another exemplary description of the photonic crystal laser in-plane emission device and emission method of the present invention.

[0171] like Figure 5 As shown, the in-plane photonic crystal laser emission device of the present invention includes: a pump beam 1, a gain medium 2, a photonic crystal microcavity 3, and a target laser 4. In this embodiment, the pump beam is exemplified by a semiconductor laser, the photonic crystal microcavity by a two-dimensional photonic crystal (using photoresist as the polymer photonic crystal material), and the gain medium by a dye-based gain material, Rhodamine 6G, other than a two-dimensional photonic crystal material. The target lasing mode of the optical microcavity is located at the boundary of the first Brillouin zone.

[0172] In this embodiment, the following calculations are performed using formulas (1)-(4) from Embodiment 1:

[0173] The formula for calculating the lattice constant of the two-dimensional photonic crystal and the lasing wavelength of the target laser is taken as an example by equation (1):

[0174]

[0175] Where a is the lattice constant of the one-dimensional photonic crystal, and λ lasing The wavelength of the target laser is lasing.

[0176] The lattice constant of a two-dimensional photonic crystal is a, and its reciprocal lattice vector is...

[0177]

[0178] Where a is the lattice constant of the two-dimensional photonic crystal, G is the reciprocal lattice vector of the lattice constant of the two-dimensional photonic crystal, and π is pi, also known as Archimedes' constant.

[0179] The target lasing mode of the optical microcavity is located at the boundary of the first Brillouin zone, as determined by simulation.

[0180]

[0181] Among them, k cavity Let be the modal wave vector of the first Brillouin zone boundary.

[0182] The target's lasing wavelength is λ lasing Its maser wave vector

[0183]

[0184] Among them, k lasing The lasing wave vector of the target laser.

[0185] When k lasing >k cavity At that time, the laser will be emitted at a certain angle. Therefore, to achieve in-plane emission, k is required. lasing =k cavity .

[0186] From formulas (3) and (4), we can deduce that

[0187]

[0188] That is, when the lattice constant of the two-dimensional photonic crystal is half the target lasing wavelength, the laser is emitted in-plane.

[0189] As can be seen from the above embodiments, the photonic crystal laser in-plane emission device, its emission method and system of the present invention can achieve in-plane laser emission as long as the lattice constant of the photonic crystal is half of the target lasing wavelength, and are not limited by the specific structure and materials of the device.

[0190] While the effects of some embodiments have been shown above, those skilled in the art should understand that, based on the concept of the invention, other embodiments not specifically shown or other technical solutions of the invention not shown in the embodiments can also achieve the same technical effects as those claimed in the summary section:

[0191] 1. The in-plane emission device based on photonic crystal of the present invention improves its adaptability in optical systems and enhances the integration capability of photonic devices.

[0192] 2. The photonic crystal laser in-plane emission device, its emission method and system of the present invention can be applied not only to traditional semiconductor materials and two-dimensional semiconductor materials, but also to new photonic crystal materials such as dielectric materials, polymer materials, metals or plasmonic materials, artificial metamaterials, etc., so as to improve the wide application, integration and light field control capability of the in-plane emission device, realize more efficient in-plane laser emission, and provide new ideas for high-density photonic integration.

[0193] Although the invention has been described to a certain extent, it is apparent that appropriate variations can be made to the various conditions without departing from the spirit and scope of the invention. It is understood that the invention is not limited to the described embodiments, but falls within the scope of the claims, which include equivalent substitutions for each of the elements.

Claims

1. A photonic crystal laser in-plane emission device, characterized in that, The photonic crystal laser in-plane emitting device includes: Pump light used to excite or activate the photonic crystal; and An optical microcavity used to control the propagation direction of a light beam and select the frequency of the amplified stimulated emission light. The optical microcavity includes a photonic crystal with a periodic structure, and the target lasing mode of the optical microcavity is located at the boundary of the first Brillouin zone.

2. The photonic crystal laser in-plane emission device according to claim 1, characterized in that, The photonic crystal laser in-plane emitting device further includes a gain medium located on or inside the optical microcavity; wherein... The gain medium is used to provide optical amplification and is excited or activated by the pump light; and / or The gain medium can also be extended in length by the optical microcavity.

3. The photonic crystal laser in-plane emission device according to claim 1 or 2, characterized in that, The lattice constant of the photonic crystal and the lasing wavelength of the target laser are designed to satisfy the following calculation formula (1): Where a is the lattice constant of the photonic crystal, and λ lasing The wavelength of the target laser is lasing.

4. The photonic crystal laser in-plane emission device according to claim 3, characterized in that, The lattice constant of the photonic crystal and the lasing wavelength of the target laser are designed to further satisfy the following calculation formula: a) The formula for calculating the reciprocal lattice vector of the lattice constant of the photonic crystal is shown in equation (2): Where a is the lattice constant of the photonic crystal, G is the reciprocal lattice vector of the lattice constant of the photonic crystal, and π is the Archimedes constant; b) The target lasing mode of the optical microcavity is located at the boundary of the first Brillouin zone, k cavity The calculation formula is shown in equation (3): Among them, k cavity The mode wave vector of the first Brillouin zone boundary; c) The formula for calculating the lasing wave vector of the target laser wavelength is shown in equation (4): Among them, k lasing The lasing wave vector of the target laser.

5. The photonic crystal laser in-plane emitting device according to claim 4, characterized in that, When k lasing =k cavity At that time, that is, If the above formula (1) is satisfied, in-plane emission can be achieved according to formula (1).

6. The photonic crystal laser in-plane emitting device according to any one of claims 1 to 5, characterized in that: The pump light source is selected from one or more of the following: semiconductor laser, ultrafast laser, solid-state laser, fiber laser, tunable laser, gas laser, dye laser, laser diode, preferably selected from one or more of the following: semiconductor laser, ultrafast laser, solid-state laser, fiber laser, tunable laser, more preferably semiconductor laser or ultrafast laser. The photonic crystal is a one-dimensional photonic crystal and / or a two-dimensional photonic crystal; and / or The material of the gain medium is selected from one or more of the following: semiconductor gain material, two-dimensional gain material, doped crystal gain material, doped glass gain material, optical fiber gain material, dye-based gain material, gas or vapor gain medium, ceramic gain medium, polymer gain material, nanostructure gain material, and amorphous gain medium. Preferably, the semiconductor gain material is selected from one or more of the following: III-V compound semiconductors, II-VI materials, wide-bandgap oxides, silicon-based materials, quantum well structure semiconductor gain bodies, and quantum dot structure semiconductor gain bodies; more preferably, it is selected from one or more of the following: GaAs, InP, AlGaAs, InGaAs, GaN, AlN, ZnSe, CdSe, ZnS, ZnO, Si, and SiGe. Preferably, the two-dimensional gain material is selected from one or more of the following: transition metal sulfides, black phosphorus, boron nitride, MXene, graphene and its derivatives, two-dimensional perovskite films, and two-dimensional quantum dot materials. More preferably, the transition metal sulfides are selected from one or more of the following: MoS2, WS2, MoSe2, and WSe2. Preferably, the doped crystal gain material is selected from one or more of the following: neodymium-doped yttrium aluminum garnet, neodymium-doped yttrium vanadate, ytterbium-doped aluminum garnet, thulium-doped YAP, erbium-doped YAG, chromium-doped zinc selenide, chromium-doped zinc sulfur, chromium-doped sapphire, and titanium-doped sapphire. Preferably, the doped glass gain material is selected from one or more of the following: neodymium-doped phosphate glass, neodymium-doped silicate glass, ytterbium-doped glass, erbium-doped glass, bismuth-doped glass, holmium-doped glass, thulium-doped glass, and rare earth fluoride glass; Preferably, the fiber gain material is selected from one or more of the following: neodymium-doped fiber, ytterbium-doped fiber, erbium-doped fiber, thulium-doped fiber, holmium-doped fiber, double-clad fiber, and passive-active coupled fiber; Preferably, the dye-based gain material is selected from one or more of the following: Rhodamine, Coumarin, Perylene Red, Stilbene, and small organic molecule excitation materials; more preferably, it is selected from one or more of the following: Rhodamine 6G, Rhodamine B, Coumarin 480, Coumarin 540A, and Perylene Red. Preferably, the gas or vapor gain medium is selected from one or more of the following: helium-neon mixed gas, nitrogen, carbon dioxide, metal vapor, rare gas ions, excimer laser gas mixture; more preferably, it is selected from one or more of the following: helium-neon mixed gas, nitrogen, carbon dioxide, copper vapor, gold vapor, mercury vapor, argon ions, krypton ions, F2-Ar, XeCl. Preferably, the ceramic gain medium is a laser ceramic doped with one or more ions selected from the following: Nd 3+ Yb 3+ Er 3 + Tm 3+ Ho 3+ Cr 4+ Pr 3+ The laser ceramic is more preferably selected from one or more of the following: YAG ceramic, Y2O3 ceramic, and LuAG ceramic; Preferably, the polymer gain material is selected from one or more of the following: dye-doped polymer films, organic polymer laser materials, and organic-inorganic hybrid gain materials; Preferably, the nanostructure gain material is selected from one or more of the following: quantum dots, nanorods, nanowires, superlattice materials, and metal / dielectric hybrid gain structures; more preferably, the quantum dots are selected from one or more of the following: CdSe, PbS, InP; and / or Preferably, the amorphous gain medium is selected from one or more of the following: amorphous oxide, amorphous silicon, and amorphous nitride.

7. A method for emitting laser light in-plane from a photonic crystal, characterized in that, The method includes: using a photonic crystal laser in-plane emission device according to any one of claims 1 to 6 to achieve in-plane emission of the target laser.

8. An optical system, characterized in that, The optical system includes the photonic crystal laser in-plane emission device as described in any one of claims 1 to 6; Preferably, the optical system is selected from one or more of the following: collimation system, beam expander, nonlinear optical system, interference system, filter system, spectral selection system, micro-nano optical system, laser feedback mirror group, spatial light modulator, deformable mirror, optical communication system, integrated photonic chip system, tunable laser source system, in-plane laser-coupled waveguide array, bio-optical detection system, lidar system, chip-level laser exposure or laser processing platform, quantum optical measurement system, and high-density photonic switch array.

9. A photonic integrated system, characterized in that, The photonic integrated system includes any one of the photonic crystal laser in-plane emission devices according to claims 1 to 6; Preferably, the photonic integrated system further includes one or more functional modules selected from the following: a light source module, a modulation module, a waveguide module, a coupling module, a detection module, a filtering and wave division module, a switching and routing module, a nonlinear device module, a feedback control module, an on-chip lasing structure module, an on-chip resonant cavity structure, an on-chip integrated laser, a quantum photonics module, and a photothermal control module.

10. The optical system according to claim 8 or the photonic integrated system according to claim 9, characterized in that, The photonic crystal is made of one or more of the following materials: semiconductor photonic crystal materials, dielectric photonic crystal materials, polymer photonic crystal materials, metal or plasmonic photonic crystal materials, artificial metamaterials and their composite photonic crystal materials; Preferably, the semiconductor photonic crystal material is selected from one or more of the following: group III-V compound semiconductors, perovskite structure semiconductors, group II-VI compound semiconductors, silicon, germanium, and silicon nitride; more preferably, it is selected from one or more of the following: gallium arsenide, indium phosphide, gallium nitride, gallium aluminum arsenide, indium gallium arsenide, indium gallium phosphide, aluminum indium arsenide, cesium lead bromide perovskite, zinc sulfide, zinc selenide, cadmium telluride, silicon, germanium, and silicon nitride. Preferably, the dielectric photonic crystal material is selected from one or more of the following: silicon dioxide, aluminum oxide, titanium dioxide, zirconium oxide, and calcium fluoride; Preferably, the polymer photonic crystal material is selected from one or more of the following: polymethyl methacrylate, polyethylene terephthalate, photoresist, and liquid crystal polymer; Preferably, the metal or plasmonic photonic crystal material is selected from one or more of the following: silver, gold, copper, aluminum, indium tin oxide; and / or Preferably, the artificial metamaterial and its composite photonic crystal material are selected from one or more of the following: Metal-dielectric periodic structure materials, metasurface component materials, and nanostructured composite materials.

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