Wafer peeling apparatus and wafer peeling method

Abstract

The application provides a wafer stripping device and a wafer stripping method. The wafer stripping device comprises: a bearing groove for accommodating a crystal bar, a plurality of wafers constituting the crystal bar; a baffle plate arranged on one side of the bearing groove, the baffle plate being provided with a first detection device and a second detection device spaced apart in the vertical direction, the first detection device and the second detection device being configured to detect the inclination state of the wafer; a slicing device arranged above the baffle plate and at least partially located on the side of the baffle plate away from the crystal bar, the slicing device being configured to move to above the wafer along the axial direction of the crystal bar and blow gas to the surface side of the wafer based on the inclination state of the wafer; the slicing device comprises a first gas control mechanism, a second gas control mechanism and a control device, the control device being electrically connected with the first gas control mechanism and the second gas control mechanism, and the control device being configured to control the gas volume difference of the gas output by the first gas control mechanism and the second gas control mechanism based on the inclination state.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing, and more specifically to a wafer stripping apparatus and a wafer stripping method. Background Technology

[0002] In semiconductor manufacturing, after wire-cutting, the wafer ingots need to be cleaned and peeled off to obtain individual wafers, laying the foundation for subsequent grinding, polishing, and packaging processes. The peeling process typically includes the following steps: First, after the wire-cut wafer ingots are placed at the workstation, the adhesive between the wafers is removed using a hot water debinding process, achieving initial adhesion release; then, a spray mechanism sprays hot water onto the surface of the wafer ingots, using its wetting effect to further reduce the surface tension between adjacent wafers, assisting in initial separation; finally, the suction cup assembly of a robotic arm picks up the initially separated wafers, completing the peeling and transfer of a single wafer.

[0003] However, the hot water sprayed by the spraying mechanism easily adheres to the wafer surface and forms a water film, which reduces the surface friction coefficient of the wafer. This makes the robot prone to slippage during the adsorption process. At the same time, residual moisture can easily seep into the vacuum generator, causing abnormal vacuum levels, equipment malfunctions, and downtime, affecting production continuity. On the other hand, when the crystal rod is detected and positioned, the wafer often tilts or shifts. Related technologies often use air jets from air knives to directly blow air onto the wafer, causing the wafer to directly hit the stripping mechanism. This can easily cause dark cracks inside the wafer, leading to wafer breakage and performance failure in subsequent processes, reducing product yield. Furthermore, if the wafer angle shift is too large, it can further cause abnormal wafer picking by the robot.

[0004] Therefore, improvements are needed to at least partially address the aforementioned problems. Summary of the Invention

[0005] The summary section introduces a series of simplified concepts, which will be further explained in detail in the detailed description section. This summary section is not intended to limit the key and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0006] To address the existing problems, this application provides a wafer stripping device, comprising: a carrier groove for accommodating a crystal rod, wherein multiple wafers constitute the crystal rod; a baffle disposed on one side of the carrier groove, wherein a first detection device and a second detection device spaced apart in the vertical direction are disposed on the baffle, the first detection device and the second detection device being configured to detect the tilt state of the wafer; and a slitting device disposed above the baffle and at least partially located on the side of the baffle away from the crystal rod, the slitting device being configured to move along the axial direction of the crystal rod to above the wafer and blow air onto the surface side of the wafer based on the tilt state of the wafer; wherein the slitting device includes a first gas control mechanism, a second gas control mechanism, and a control device, the control device being electrically connected to the first gas control mechanism and the second gas control mechanism, and the control device being configured to control the gas volume difference between the first gas control mechanism and the second gas control mechanism based on the tilt state.

[0007] Exemplarily, a slicing mechanism is provided, wherein a first air inlet and a second air inlet are spaced apart, and a first air outlet and a second air outlet are provided on the slicing mechanism, the first air outlet and the first air inlet being connected, and the second air outlet and the second air inlet being connected; a third detection device is disposed on the slicing mechanism, the third detection device being used to detect the relative position between the wafer and the slicing mechanism, and outputting a trigger signal when the relative position is detected to be the position of the wafer corresponding to the center region position of the slicing mechanism in its moving direction; a moving member is connected to the slicing mechanism, used to drive the slicing mechanism to move along the axial direction of the crystal rod; wherein, the first A gas control mechanism is connected to the first air inlet and is used to provide a first gas to the first air inlet. The first gas is discharged from the first air outlet and ejected toward the first surface side of the wafer. A second gas control mechanism is connected to the second air inlet and is used to provide a second gas to the second air inlet. The second gas is discharged from the second air outlet and ejected toward the second surface side of the wafer. The first surface side and the second surface side are arranged opposite to each other. The control device is also electrically connected to the third detection device and the moving member, and is configured to control the moving member to drive the slicing mechanism to move, and to control the first gas control mechanism and the second gas control mechanism to output gas in response to the trigger signal.

[0008] For example, the first gas control mechanism includes a first gas pipeline and a first adjustment mechanism disposed on the first gas pipeline. One end of the first gas pipeline is connected to the first air inlet, and the other end of the first gas pipeline is connected to a gas source. The first adjustment mechanism is used to adjust the amount of the first gas flowing into the segmentation mechanism through the first gas pipeline.

[0009] For example, the second gas control mechanism includes a second gas pipeline and a second adjustment mechanism disposed on the second gas pipeline. One end of the second gas pipeline is connected to the second air inlet, and the other end of the second gas pipeline is connected to a gas source. The second adjustment mechanism is used to adjust the amount of the second gas flowing into the segmentation mechanism through the second gas pipeline.

[0010] For example, the moving component is provided with a first moving member and a second moving member at both ends in its moving direction, wherein the first moving member is further provided with a driving device, the driving device being configured to drive the segmentation mechanism to move based on the control signal output by the control device.

[0011] For example, the first gas outlet and the second gas outlet are respectively disposed on one side of the slitting mechanism facing the wafer, wherein the gas outlet of the first gas outlet is inclined towards the central region of the slitting mechanism, and the gas outlet of the second gas outlet is inclined towards the central region of the slitting mechanism.

[0012] For example, the first air inlet and the second air inlet are disposed on the side of the slitting mechanism away from the wafer, wherein the first air inlet and the second air inlet are spaced apart in the moving direction of the slitting mechanism, the slitting mechanism has a recessed portion and a straight portion, the top of the recessed portion and the straight portion are connected, the first air inlet is disposed on the top of the recessed portion, and the second air inlet is disposed on the straight portion.

[0013] For example, the first air outlet and the second air outlet are spaced apart in the moving direction of the slicing mechanism, and the distance between the first air outlet and the top of the wafer is less than the distance between the second air outlet and the top of the wafer.

[0014] For example, the third detection device is disposed on the side of the slitting mechanism facing the wafer, and is located in the central region of the slitting mechanism in its direction of movement.

[0015] For example, the first gas outlet is close to the baffle, and the second gas outlet is far from the baffle. The control device is further configured to: control the difference in gas volume output by the first gas control mechanism and the second gas control mechanism based on the tilt state, wherein, when the tilt state is a vertical state, the gas volume of the first gas output by the first gas control mechanism is equal to the gas volume of the second gas output by the second gas control mechanism; when the tilt state is when the wafer is tilted towards the side away from the baffle, the gas volume of the first gas output by the first gas control mechanism is less than the gas volume of the second gas output by the second gas control mechanism; when the tilt state is when the wafer is tilted towards the side close to the baffle, the gas volume of the first gas output by the first gas control mechanism is greater than the gas volume of the second gas output by the second gas control mechanism.

[0016] For example, the segmentation mechanism has at least one clearance recess on one side where the first air outlet and the second air outlet are located, and the clearance recess is located between the first air outlet and the second air outlet.

[0017] According to another aspect of this application, a wafer stripping method is provided, which employs the aforementioned wafer stripping apparatus for wafer stripping. The wafer stripping method includes: placing a wafer ingot into a carrier groove; determining the tilt state of the wafer using a first detection device and a second detection device on a baffle; a control device controlling a moving component to move a slitting mechanism along the axial direction of the wafer ingot based on the tilt state; a third detection device detecting that the relative position between the wafer and the slitting mechanism corresponds to the position of the wafer in the central region of the slitting mechanism in its moving direction, and outputting a trigger signal; and the control device responding to the trigger signal by controlling a first gas control mechanism to output a first gas and a second gas control mechanism to output a second gas.

[0018] For example, the method further includes: activating the first gas control mechanism and the second gas control mechanism to provide gas to the wafer; the control device determining the amount of the first gas output by the first gas control mechanism and the amount of the second gas output by the second gas control mechanism based on the tilt state; adjusting the wafer to a peeling posture based on the amount of the first gas output by the first gas control mechanism and the amount of the second gas output by the second gas control mechanism; and removing the wafer by a wafer pick-up device to complete the wafer peeling.

[0019] For example, the control device determines the volume of the first gas output by the first gas control mechanism and the volume of the second gas output by the second gas control mechanism based on the tilt state, including: when the tilt state is a vertical state, the control device controls the volume of the first gas output by the first gas control mechanism to be equal to the volume of the second gas output by the second gas control mechanism; when the tilt state is when the wafer is tilted towards the side away from the baffle, the volume of the first gas output by the first gas control mechanism is less than the volume of the second gas output by the second gas control mechanism; when the tilt state is when the wafer is tilted towards the side closer to the baffle, the volume of the first gas output by the first gas control mechanism is greater than the volume of the second gas output by the second gas control mechanism.

[0020] The wafer stripping apparatus and method provided in this application achieve real-time monitoring of the wafer tilt state by setting a baffle with a first detection device and a second detection device on one side of the carrier groove, and setting a slitting device above the baffle. The slitting device blows air on the surface side of the wafer based on the wafer tilt state, which effectively corrects the wafer posture, facilitates wafer stripping, reduces internal defects and cracks in the wafer and abnormal wafer picking by the wafer picking device. In addition, it also reduces the risk of wafer dicing and the probability of vacuum generator failure, ensures continuous production, improves product yield and increases production efficiency. Attached Figure Description

[0021] The above and other objects, features, and advantages of this application will become more apparent from the more detailed description of the embodiments of this application in conjunction with the accompanying drawings. The drawings are provided to further illustrate the embodiments of this application and form part of the specification. They are used together with the embodiments of this application to explain this application and do not constitute a limitation thereof. In the drawings, the same reference numerals generally represent the same components or steps.

[0022] In the attached image:

[0023] Figure 1 A schematic diagram of the structure of a wafer lift-off apparatus according to an exemplary embodiment of this application is shown;

[0024] Figure 2 A schematic diagram of the structure of a slicing device according to an exemplary embodiment of this application is shown;

[0025] Figure 3 A schematic diagram of a slicing mechanism according to an exemplary embodiment of this application is shown;

[0026] Figure 4 A flowchart of a wafer stripping method according to an exemplary embodiment of this application is shown. Detailed Implementation

[0027] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of this application. However, it will be apparent to those skilled in the art that the invention may be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described in order to avoid obscuring the invention.

[0028] It should be understood that this application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated. The same reference numerals denote the same elements throughout.

[0029] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art. It will also be understood that terms as defined in commonly used dictionaries shall be construed as having a meaning consistent with their meaning in the relevant field and / or the context of this specification, and not as interpreted in an ideal or overly formal sense, unless expressly defined herein.

[0030] To fully understand this application, detailed steps and structures will be presented in the following description to illustrate the technical solutions proposed in this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0031] In the post-cleaning process after in-line dicing, the crystal ingots undergo hot water debinding. A spray system then applies hot water to reduce inter-wafer tension during the peeling process. Finally, a robot's suction cup assembly picks up the wafers for peeling. However, the hot water sprayed by the system tends to adhere to the wafer surface, forming a water film. This reduces the wafer's surface friction coefficient, making the robot's suction cup prone to slippage during adsorption. Furthermore, residual moisture can seep into the vacuum generator, causing abnormal vacuum levels, equipment malfunctions, and downtime, impacting production continuity. On the other hand, during crystal ingot detection and positioning, the wafers often tilt or shift. Related technologies often use air jets to directly blow air onto the wafers, causing them to directly impact the peeling mechanism. This can easily lead to internal microcracks, resulting in wafer breakage and performance failure in subsequent processes, reducing product yield. Moreover, excessive wafer angular deviation can further cause abnormal robot wafer picking, resulting in poor peeling stability and impacting overall production line efficiency and reliability.

[0032] Therefore, in view of the aforementioned technical problems, this application proposes a wafer stripping device, which includes:

[0033] The support groove is used to hold the crystal rod, and multiple wafers constitute the crystal rod;

[0034] A baffle is provided on one side of the bearing groove. A first detection device and a second detection device are provided on the baffle at a vertical distance. The first detection device and the second detection device are configured to detect the tilt state of the wafer.

[0035] The wafer slicing device is disposed above the baffle and at least partially located on the side of the baffle away from the crystal rod. The wafer slicing device is configured to move along the axial direction of the crystal rod to above the wafer and blow air onto the surface side of the wafer based on the tilt state of the wafer.

[0036] The segmentation device includes a first gas control mechanism, a second gas control mechanism, and a control device. The control device is electrically connected to the first gas control mechanism and the second gas control mechanism. The control device is configured to control the gas volume difference between the output of the first gas control mechanism and the second gas control mechanism based on the tilt state.

[0037] The wafer stripping device provided in this application achieves real-time monitoring of the wafer tilt state by setting a baffle with a first detection device and a second detection device on one side of the carrier groove, and setting a slitting device above the baffle. The slitting device blows air on the surface side of the wafer based on the wafer tilt state, which effectively corrects the wafer posture, facilitates wafer stripping, reduces internal defects and cracks in the wafer and abnormal wafer picking by the wafer picking device. In addition, it also reduces the risk of wafer dicing and the probability of vacuum generator failure, ensures continuous production, improves product yield and increases production efficiency.

[0038] Example 1

[0039] Below, for reference Figures 1 to 3 The wafer lift-off apparatus of this application is described in detail, such as... Figure 1As shown, the wafer stripping device includes: a carrier groove 20 for accommodating a crystal rod, wherein multiple wafers constitute the crystal rod; a baffle 16 disposed on one side of the carrier groove 20, wherein a first detection device 160 and a second detection device 161 spaced apart in the vertical direction are disposed on the baffle 16, the first detection device 160 and the second detection device 161 being configured to detect the tilt state of the wafer; and a slitting device 100 disposed above the baffle 16 and at least partially located on the side of the baffle 16 away from the crystal rod, the slitting device 100 being configured to move along the axial direction of the crystal rod to above the wafer and blow air onto the surface side of the wafer based on the tilt state of the wafer; wherein the slitting device 100 includes a first gas control mechanism 11, a second gas control mechanism 12 and a control device 15, the control device 15 being electrically connected to the first gas control mechanism 11 and the second gas control mechanism 12, and the control device 15 being configured to control the gas volume difference between the gas output by the first gas control mechanism 11 and the second gas control mechanism 12 based on the tilt state.

[0040] In this embodiment, the wafer stripping device comprises a carrier groove 20, a baffle 16, and a slitting device 100. The carrier groove 20 is used to accommodate a crystal rod, which is composed of multiple stacked wafers. The carrier groove 20 has a groove structure adapted to the shape of the crystal rod, which can stably support the crystal rod. The baffle 16 is disposed on one side of the carrier groove 20. A first detection device 160 and a second detection device 161 are disposed on the baffle 16, which are arranged at intervals in the vertical direction. For example, the first detection device 160 is located on the side of the baffle 16 closer to the carrier groove 20, and the second detection device 161 is located on the side of the baffle 16 away from the carrier groove 20. The tilt state of the wafer (e.g., forward tilt, backward tilt, and vertical state) can be determined by the combination of signals output by the first detection device 160 and the second detection device 161. The wafer slitting device 100 is positioned above the baffle 16 and can move along the axial direction of the crystal ingot to position itself above the wafer. The slitting device 100 is equipped with an air outlet for blowing air onto the surface of the wafer, gradually bringing it towards a vertical position, facilitating subsequent contactless wafer stripping. The wafer stripping device provided in this application, by setting a baffle with a first and second detection device on one side of the carrier groove and a slitting device above the baffle, achieves real-time monitoring of the wafer's tilt state. The slitting device blows air onto the surface of the wafer based on its tilt state, effectively correcting the wafer's orientation, facilitating wafer stripping, reducing internal wafer damage and cracks, and minimizing wafer removal malfunctions. Furthermore, it reduces the risk of wafer dicing and the probability of vacuum generator failure, ensuring continuous production, improving product yield, and increasing production efficiency.

[0041] In some embodiments, such as Figure 1As shown, the wafer stripping device includes a carrier groove 20 for accommodating crystal rods, which are composed of multiple wafers. Specifically, the crystal rod is formed by stacking multiple wafers along its axial direction. The carrier groove 20 has a groove structure adapted to the shape of the crystal rod, which can provide stable support for the crystal rod and keep it stable during transportation. The carrier groove 20 can be made of a corrosion-resistant material, possessing good wear resistance and chemical stability, suitable for long-term use in wet process environments.

[0042] In some embodiments, such as Figure 1 As shown, the wafer stripping device also includes a baffle 16, which is disposed on one side of the carrier groove 20. The baffle 16 has a first detection device 160 and a second detection device 161 spaced apart in the vertical direction. The first detection device 160 and the second detection device 161 are configured to detect the tilt state of the wafer. Specifically, the baffle 16 is disposed on one side of the carrier groove 20 and located on the movement path of the wafer after it is pushed, for contacting the wafer to be stripped, preventing it from moving excessively or flipping under the action of gas. The baffle 16 has a wafer retrieval window, which is an opening structure penetrating the thickness direction of the baffle, for subsequent wafer retrieval by a wafer retrieval device. The baffle 16 can be made of non-metallic wear-resistant materials, such as polytetrafluoroethylene (PTFE), polyetheretherketone (PEEK), or ceramic coatings. The surface of the baffle 16 is smooth and has a certain degree of elasticity, which can effectively buffer the impact force of the wafer, avoiding surface scratches or edge damage, and reducing particle shedding, thus meeting the cleanliness requirements of semiconductor processes.

[0043] For example, the first detection device 160 and the second detection device 161, which are spaced apart in the vertical direction of the baffle 16, can be a distance sensor, such as a laser displacement sensor or an inductive sensor, to detect the tilt state of the wafer, thereby providing a feedback signal to the slitting device 100. Specifically, the first detection device 160 and the second detection device 161 emit measurement signals (e.g., light signals or electromagnetic signals) toward the surface of the wafer and receive reflected signals, and output the distance value between the edge of the wafer and the sensor in real time. The tilt state of the wafer is determined by whether the distance value is within a preset range. Specifically, when the wafer is tilted in a vertical position, if the distance values ​​measured by the first detection device 160 and the second detection device 161 are both within a preset range, then both the first detection device 160 and the second detection device 161 are in a triggered state. When the wafer is tilted towards the side away from the baffle 16 (i.e., the wafer is tilted backward), if the distance value measured by the first detection device 160 is within the preset range but the distance value measured by the second detection device 161 is not within the preset range, then the first detection device 160 is in a triggered state and the second detection device 161 is not triggered. When the wafer is tilted towards the side closer to the baffle 16 (i.e., the wafer is tilted forward), if the distance value measured by the first detection device 160 is not within the preset range but the distance value measured by the second detection device 161 is within the preset range, then the first detection device 160 is not triggered and the second detection device 161 is in a triggered state. This preset range can be reasonably set based on prior experience and is not specifically limited here. Alternatively, in some embodiments, the tilt state can be determined by comparing the distance measured by the first detection device 160 and the distance measured by the second detection device 161. For example, when the difference between the two measured distances is less than or equal to a predetermined value, it indicates that the wafer is basically in a vertical tilt state; when the distance measured by the first detection device 160 is greater than the distance measured by the second detection device 161, and the difference between the two is greater than a predetermined value, the tilt state is that the wafer is tilted towards the side closer to the baffle 16, i.e., the wafer is tilted forward; when the distance measured by the first detection device 160 is less than the distance measured by the second detection device 161, and the difference between the two is greater than a predetermined value, the tilt state is that the wafer is tilted towards the side farther from the baffle 16, i.e., the wafer is tilted backward.

[0044] In some embodiments, such as Figure 1 and Figure 2As shown, the wafer stripping apparatus includes a slitting device 100, which includes a slitting mechanism 10. A first air inlet 101 and a second air inlet 102 are spaced apart on the slitting mechanism 10. Exemplarily, the first air inlet 101 and the second air inlet 102 are located on the side of the slitting mechanism 10 away from the wafer, wherein the first air inlet 101 and the second air inlet 102 are spaced apart upwards as the slitting mechanism 10 moves. Specifically, the first air inlet 101 and the second air inlet 102 are spaced apart on the top of the slitting mechanism 10. For example, the first air inlet 101 is located on the left side of the top of the slitting mechanism 10, and the second air inlet 102 is located on the right side of the top of the slitting mechanism 10, for receiving compressed gas. The shape and size of the first air inlet 101 and the second air inlet 102 can be set as needed and are not specifically limited thereto.

[0045] In some embodiments, such as Figure 3 As shown, a third detection device is provided on the slicing mechanism 10. The third detection device is used to detect the relative position between the wafer and the slicing mechanism 10, and outputs a trigger signal when it detects that the relative position corresponds to the center region position of the slicing mechanism 10 in its moving direction. For example, as shown... Figure 2 The dashed line indicates that the third detection device is located on the side of the slicing mechanism 10 facing the wafer, and is situated in the central region of the slicing mechanism 10 in its moving direction. It is used to monitor the relative position of the wafer edge to the slicing mechanism 10 in real time. Specifically, when the wafer moves and its edge enters the sensing range of the third detection device, the third detection device outputs a trigger signal. The control device 15 determines, based on this trigger signal, that the wafer has reached the central region below the slicing mechanism 10. The third detection device can be a proximity switch, a photoelectric sensor, or a laser rangefinder, etc., without specific limitations. For example, when the third detection device is a proximity switch, when the wafer edge enters the sensing range of the proximity switch, the alternating magnetic field generated by the coil inside the switch induces eddy currents on the wafer surface, causing a change in coil impedance, thereby triggering the proximity switch to output a trigger signal. When the wafer leaves the sensing range, the proximity switch becomes untriggered, and there is no trigger signal. Exemplarily, the third detection device is also provided with a protective layer, which can be made of materials such as polytetrafluoroethylene (PTFE) or diamond-like carbon (DLC), without specific limitations. The protective layer can effectively prevent residual moisture on the wafer surface from causing false triggering of the third detection device, thus improving the working stability and signal reliability of the third detection device in high humidity or residual moisture environments.

[0046] In some embodiments, such as Figure 2As shown, the slitting mechanism 10 is provided with a first air outlet 103 and a second air outlet 104. The first air outlet 103 is connected to the first air inlet 101, and the second air outlet 104 is connected to the second air inlet 102. This is used to guide the first gas from the first gas control mechanism 11 and the second gas from the second gas control mechanism 12 to the two surface sides of the wafer, thereby achieving non-contact wafer stripping. For example, the first air outlet 103 and the second air outlet 104 are respectively disposed on the side of the slicing mechanism 10 facing the wafer, that is, they are spaced apart in the bottom region of the slicing mechanism 10. The gas outlet of the first air outlet 103 is inclined towards the central region below the slicing mechanism 10, forming an oblique airflow pointing towards the central region. The gas outlet of the second air outlet 104 is inclined towards the central region below the slicing mechanism 10, forming a symmetrical convergence with the gas outlet of the first air outlet 103 in the central region. This applies gas to both surface sides of the wafer to achieve dynamic adjustment of the wafer orientation, prevent excessive tilting or displacement, and complete stable slicing. Specifically, the bottom of the segmentation mechanism 10 has a first air outlet 103 and a second air outlet 104 at its left and right ends, respectively. For example, the first air outlet 103 is located on the left side of the bottom of the segmentation mechanism 10 and is connected to the first air inlet 101 through an internal air passage. The second air outlet 104 is located on the right side of the bottom of the segmentation mechanism 10 and is connected to the second air inlet 102 through an internal air passage. The shape and size of the first air outlet 103 and the second air outlet 104 can be set according to the actual situation and are not specifically limited.

[0047] For example, such as Figure 3 As shown, the segmented mechanism 10 has a recessed portion 105 and a straight portion 106. The top of the recessed portion 105 and the straight portion 106 are connected. A first air inlet 101 is disposed on the top of the recessed portion 105, and a second air inlet 102 is disposed on the straight portion 106. Specifically, the segmented mechanism 10 can be an asymmetrical structure. The segmented mechanism 10 has a recessed portion 105 on a first side (e.g., the left side) along its central axis, and a straight portion 106 on a second side (e.g., the right side) along its central axis. The first air inlet 101 is disposed on the recessed portion 105, and the second air inlet 102 is disposed on the straight portion 106. The recessed portion 105 and the straight portion 106 are asymmetrical in height and profile. This asymmetric structure gives the slab mechanism 10 a stepped cross-section, with the first side lower than the second side to create a height difference. This makes the distance between the first vent 103 and the wafer top less than the distance between the second vent 104 and the wafer top, preventing moisture from tilting forward. In other examples, the slab mechanism 10 can also be a symmetrical structure; this is not specifically limited.

[0048] In some embodiments, the slicing device 100 includes a first gas control mechanism 11 connected to a first air inlet 101 for supplying a first gas to the first air inlet 101. The first gas is discharged from a first air outlet 103 and ejected toward the first surface side of the wafer. Exemplarily, the first gas supplied by the first gas control mechanism 11 enters the airflow channel inside the slicing device 10 through the first air inlet 101 and is discharged from the first air outlet 103. Its outlet direction is toward the central region below the slicing device 10 and inclined, so that the first gas acts on the first surface side of the wafer to be stripped, forming an oblique impact force to suppress excessive wafer tilting and achieve stable slicing. The first gas control mechanism 11, the first air inlet 101, and the first air outlet 103 constitute the first side (e.g., the left side) gas supply system of the slicing device 10. Its gas path is clear and its direction is controllable, achieving effective action on one surface side of the wafer and providing a structural basis for subsequent dual-sided gas collaborative control and attitude adjustment.

[0049] In some embodiments, the first gas control mechanism 11 includes a first gas pipeline 110 and a first regulating mechanism 111 disposed on the first gas pipeline 110. One end of the first gas pipeline 110 is connected to a first air inlet 101 via the first regulating mechanism 111, and the other end of the first gas pipeline 110 is connected to a gas source. The first regulating mechanism 111 is used to regulate the amount of first gas flowing into the segmentation mechanism 10 through the first gas pipeline 110. Specifically, the first regulating mechanism 111 can be connected in series with the first gas pipeline 110. The first gas output from the gas source enters the inlet end of the first regulating mechanism 111 through the first gas pipeline 110. After the pressure and flow rate of the gas are regulated by the first regulating mechanism 111, it is output from its outlet end to the first air inlet 101 of the segmentation mechanism 10. Exemplarily, the first regulating mechanism 111 can be a proportional flow valve or an electric regulating valve, etc., and is not specifically limited thereto.

[0050] In some embodiments, the slitting apparatus 100 includes a second gas control mechanism 12 connected to a second air inlet 102 for supplying a second gas to the second air inlet 102. The second gas is discharged from a second air outlet 104 and ejected toward the second surface side of the wafer, with the first surface side and the second surface side disposed opposite to each other. Exemplarily, the second gas supplied by the second gas control mechanism 12 enters the airflow channel inside the slitting apparatus 10 through the second air inlet 102 and is finally discharged from the second air outlet 104. The gas outlet 104 is directed toward the central region below the slitting apparatus 10 and is inclined, so that the second gas acts on the second surface side of the wafer to be stripped, forming an oblique impact force to suppress excessive wafer tilting and achieve stable slitting. The first surface side and the second surface side are two opposite sides of the wafer. The second gas control mechanism 12, the second air inlet 102 and the second air outlet 104 constitute the second side (e.g., the right side) gas supply system of the slicing mechanism 10. The first side gas supply system and the second side gas supply system achieve wafer orientation adjustment and smooth separation by independently controlling the gas on the two surface sides of the wafer.

[0051] In some embodiments, the second gas control mechanism 12 includes a second gas pipeline 120 and a second regulating mechanism 121 disposed on the second gas pipeline 120. One end of the second gas pipeline 120 is connected to a second air inlet 102 via the second regulating mechanism 121, and the other end of the second gas pipeline 120 is connected to a gas source. The second regulating mechanism 121 is used to regulate the amount of second gas flowing into the segmentation mechanism 10 through the second gas pipeline 120. Specifically, the second regulating mechanism 121 can be connected in series with the second gas pipeline 120. The second gas output from the gas source enters the inlet end of the second regulating mechanism 121 through the second gas pipeline 120. After the pressure and flow rate of the gas are regulated by the second regulating mechanism 121, it is output from its outlet end to the second air inlet 102 of the segmentation mechanism 10. Exemplarily, the second regulating mechanism 121 can be a proportional flow valve or an electric regulating valve, etc., without specific limitation. The first gas and the second gas can be the same gas or different gases, without specific limitation.

[0052] In some embodiments, such as Figure 2As shown, the slitting device 100 includes a moving member connected to the slitting mechanism 10, used to drive the slitting mechanism 10 to move along the axial direction of the crystal rod, wherein multiple wafers constitute the crystal rod. Exemplarily, the moving member has a first moving element 13 and a second moving element 14 respectively provided at both ends in its moving direction, wherein the first moving element 13 and the second moving element 14 are respectively connected to the slitting mechanism 10. Specifically, the first moving element 13 is connected to a first side (e.g., the left side) of the slitting mechanism 10, and the second moving element 14 is connected to a second side (e.g., the right side) opposite to the first side. The first moving element 13 and the second moving element 14 are symmetrically arranged on the left and right sides of the slitting mechanism 10. Through the coordinated action of the first moving element 13 and the second moving element 14, the slitting mechanism 10 can move forward or backward along the axial direction of the crystal rod under the command of the control device 15, that is, move left or right along the axial direction of the crystal rod.

[0053] For example, the first moving member 13 includes a first lead screw 130, a first guide rod 131, and a first bracket 132. The first lead screw 130 and the first guide rod 131 are spaced apart. One end of the first lead screw 130 and the first guide rod 131 is connected to the segmentation mechanism 10, and the other end of the first lead screw 130 and the first guide rod 131 is connected to the first bracket 132. A driving device is provided in the first bracket 132. The driving device is configured to drive the segmentation mechanism 10 to move based on the control signal output by the control device 15. Specifically, the first support 132 can be a rigid structural component, internally mounted on a drive device. The output end of the drive device can be connected to one end of the first lead screw 130 via a coupling or other component. The other end of the first lead screw 130 can be connected to the segmenting mechanism 10 via a nut assembly or other component. The first lead screw 130 and the first guide rod 131 are spaced apart. One end of the first guide rod 131 is connected to the first support 132. The segmenting mechanism 10 is equipped with a bearing, which forms a sliding fit with the first guide rod 131 through the bearing, allowing for linear movement. This prevents the segmenting mechanism 10 from deflecting, tilting, or vibrating during movement, significantly improving the repeatability and stability of the motion. For example, the drive device can be a servo motor, etc., without specific limitations.

[0054] Exemplarily, the second moving member 14 includes a second lead screw 140, a second guide rod 141, and a second bracket 142. The second lead screw 140 and the second guide rod 141 are spaced apart. One end of the second lead screw 140 and the second guide rod 141 is connected to the segmentation mechanism 10, and the other end of the second lead screw 140 and the second guide rod 141 is connected to the second bracket 142. Specifically, the second bracket 142 can be a rigid structural member used to install and fix the second guide rod 141 and the second lead screw 140, providing support for the movement of the segmentation mechanism 10. The second lead screw 140 and the second guide rod 141 are spaced apart. One end of the second lead screw 140 is connected to the second bracket 142, and the other end can be connected to the segmentation mechanism 10 through a nut assembly or the like. One end of the second guide rod 141 is connected to the second bracket 142. The segmentation mechanism 10 is provided with a bearing, and the segmentation mechanism 10 forms a sliding fit with the second guide rod 141 through the bearing and performs linear movement. When the control device 15 sends a control signal, the drive device drives the first lead screw 130 to rotate, which in turn drives the slitting mechanism 10 to move. During the movement, when the slitting mechanism 10 moves to the left along the axial direction of the crystal rod, the slitting mechanism 10 slides along the first guide rod 131 through the bearing; when the slitting mechanism 10 moves to the right along the axial direction of the crystal rod, the slitting mechanism 10 slides along the second guide rod 141 through the bearing, thereby achieving smooth and precise movement of the slitting mechanism.

[0055] In some embodiments, such as Figure 2 As shown, the slitting device 100 includes a control device 15, which is electrically connected to a third detection device, a first gas control mechanism 11, a second gas control mechanism 12, and a moving member. The control device 15 controls the moving member to move the slitting mechanism 10, and in response to a trigger signal, controls the first gas control mechanism 11 and the second gas control mechanism 12 to output gas. Specifically, during the stripping process, the control device 15 first controls the moving member to move the slitting mechanism 10 along the axial direction of the crystal rod. When the slitting mechanism 10 approaches the wafer to be stripped, and the edge of the wafer enters the sensing area of ​​the third detection device, the third detection device triggers and outputs a trigger signal. The control device 15 responds to the trigger signal and then activates the first gas control mechanism 11 and the second gas control mechanism 12 to provide gas to both sides of the slitting mechanism 10, thereby achieving contactless separation of the wafer. Exemplarily, the control device 15 can be a programmable logic controller (PLC) or an industrial computer, etc., without specific limitation.

[0056] For example, the control device 15 is further configured to: control the difference in gas volume output by the first gas control mechanism 11 and the second gas control mechanism 12 based on the tilt state, wherein when the tilt state is vertical, the gas volume of the first gas output by the first gas control mechanism 11 is equal to the gas volume of the second gas output by the second gas control mechanism 12; when the tilt state is when the wafer is tilted towards the side away from the baffle 16, i.e., the wafer is tilted backward, the gas volume of the first gas output by the first gas control mechanism 11 is less than the gas volume of the second gas output by the second gas control mechanism 12; when the tilt state is when the wafer is tilted towards the side closer to the baffle 16, i.e., the wafer is tilted forward, the gas volume of the first gas output by the first gas control mechanism 11 is greater than the gas volume of the second gas output by the second gas control mechanism 12. The control device 15 determines the tilt state of the wafer based on the combination of trigger signals from the first detection device 160 and the second detection device 161, and adjusts the gas volume output by the first gas control mechanism 11 and the second gas control mechanism 12 according to the tilt state of the wafer, thereby achieving dynamic correction of the wafer orientation and smooth peeling.

[0057] In some embodiments, such as Figures 1 to 3 As shown, the first air outlet 103 is close to the baffle 16, and the second air outlet 104 is away from the baffle 16. The slitting mechanism 10 has at least one clearance recess 107 on one side where the first air outlet 103 and the second air outlet 104 are located. The clearance recess 107 is located between the first air outlet 103 and the second air outlet 104. Specifically, the partial contour of the clearance recess 107 is recessed into the slitting mechanism 10, so as to avoid mechanical collisions when the slitting mechanism 10 moves, ensuring smooth movement of the slitting mechanism 10, and providing sufficient airflow channels for the first air outlet 103 and the second air outlet 104 in space, ensuring that clean and dry gas is stably ejected and effectively acts on the two surface sides of the wafer to achieve wafer orientation adjustment and slitting.

[0058] The wafer stripping device of this application embodiment, by setting a baffle with a first detection device and a second detection device on one side of the carrier groove, and setting a slitting device above the baffle, realizes real-time monitoring of the wafer tilt state. The slitting device blows air on the surface side of the wafer based on the wafer tilt state, effectively correcting the wafer posture, facilitating wafer stripping, reducing the occurrence of internal defects and cracks in the wafer and abnormal wafer picking by the wafer picking device. In addition, it also reduces the risk of wafer dicing and the probability of vacuum generator failure, ensuring continuous production, improving product yield and increasing production efficiency.

[0059] Example 2

[0060] like Figure 4 As shown, this application provides a wafer stripping method. The wafer stripping method uses the wafer stripping apparatus of Embodiment 1 to perform wafer stripping. The wafer stripping method includes the following steps:

[0061] Step S1: Place the crystal rod into the carrier groove and determine the tilt state of the wafer through the first and second detection devices on the baffle.

[0062] Step S2: The control device controls the moving component based on the tilt state to drive the slitting mechanism to move along the axial direction of the crystal rod;

[0063] Step S3: When the third detection device detects that the relative position between the wafer and the slicing mechanism is the position of the wafer corresponding to the center region position of the slicing mechanism in its moving direction, it outputs a trigger signal.

[0064] In step S4, the control device responds to the trigger signal by controlling the first gas control mechanism to output the first gas and the second gas control mechanism to output the second gas.

[0065] In some embodiments, a crystal ingot is placed in the carrier groove 20 of the wafer stripping device. A first detection device 160 and a second detection device 161 on the baffle 16 determine the tilt state of the wafer. The control device 15 controls a moving member based on the tilt state to move the slitting mechanism 10 along the axial direction of the crystal ingot. Exemplarily, the tilt state of the wafer is determined by the triggering states of the first detection device 160 and the second detection device 161 on the baffle 16. Exemplarily, the first detection device 160 and the second detection device 161 are spaced apart on the baffle 16 along its vertical direction. For example, the second detection device 161 is positioned closer to the slitting device 100, and the first detection device 160 is positioned further away from the slitting device 100. When the wafer moves towards the baffle 16, the control device 15 acquires the trigger signals of the first detection device 160 and the second detection device 161, and determines the tilt state of the wafer based on the combination of the two trigger signals. Specifically, when both the first detection device 160 and the second detection device 161 are triggered, the wafer can be determined to be in a vertical position. When the first detection device 160 is triggered but the second detection device 161 is not triggered, the wafer can be determined to be tilted backward, i.e., the wafer is tilted towards the side away from the baffle 16. When the second detection device 161 is triggered but the first detection device 160 is not triggered, the wafer can be determined to be tilted forward, i.e., the wafer is tilted towards the side closer to the baffle 16. At this time, the first detection device 160 and the second detection device 161 output signals to the control device 15, which serve as the control basis for the subsequent positioning and air volume adjustment of the slicing device 100.

[0066] In some embodiments, when the third detection device detects that the relative position between the wafer and the dicing mechanism 10 corresponds to the central region position of the dicing mechanism 10 in its moving direction, it outputs a trigger signal. Specifically, after confirming the initial orientation of the wafer, the control device 15 sends a command to the driving device of the moving component, controlling it to drive the dicing mechanism 10 to move gradually along the axial direction of the crystal rod. The dicing mechanism 10 moves at a preset speed under the command of the control device 15. The control device 15 monitors the trigger signal of the third detection device installed on the dicing mechanism 10 in real time. When the dicing mechanism 10 approaches the target wafer and the edge of the wafer enters the sensing range of the third detection device, the third detection device immediately outputs a trigger signal to the control device 15. The control device 15 controls the dicing mechanism 10 to stop moving, and preliminarily determines that the wafer is located in the central region position of the dicing mechanism 10 in its moving direction.

[0067] In some embodiments, in response to a trigger signal, the control device 15 controls the first gas control mechanism 11 to output a first gas and the second gas control mechanism 12 to output a second gas. Exemplarily, the control device 15 determines the amount of the first gas output by the first gas control mechanism 11 and the amount of the second gas output by the second gas control mechanism 12 based on the tilt state; based on the amount of the first gas output by the first gas control mechanism 11 and the amount of the second gas output by the second gas control mechanism 12, the wafer is adjusted to a stripping posture. For example, firstly, when both the first detection device 160 and the second detection device 161 are triggered, the control device 15 determines that the wafer is in a vertical orientation and controls the slitting mechanism 10 to move, causing the third detection device to be triggered. The slitting mechanism 10 then stops moving, confirming that the wafer is located in the central region below the slitting mechanism. Secondly, the control device 15 controls the first gas control mechanism 11 and the second gas control mechanism 12 to start synchronously, outputting first and second gases to both sides of the slitting mechanism 10. The amounts of the first and second gases are equal, causing the wafer to be adjusted to the peeling orientation. The amounts of the first and second gases are preset values, specifically set according to actual conditions, and are not specifically limited. The first and second gases can be the same gas or different gases, and are not specifically limited in this regard.

[0068] For example, when the first detection device 160 is triggered but the second detection device 161 is not triggered, the control device 15 determines that the wafer is in a backward tilted posture, that is, the wafer is tilted towards the side away from the baffle 16. It then controls the slitting mechanism 10 to move, causing the third detection device to be triggered, at which point the slitting mechanism 10 stops moving. The control device 15 controls the first gas control mechanism 11 and the second gas control mechanism 12 to start synchronously. The initial gas supply of the two gas control mechanisms is equal (i.e., the gas volumes of the first gas and the second gas are equal), both being preset values. Then, the gas volume of the second gas in the second gas control mechanism 12 is gradually increased, so that the gas volume of the second gas output by the second gas control mechanism 12 is greater than the gas volume of the first gas output by the first gas control mechanism 11. This drives the wafer to tilt towards the side closer to the baffle 16 and gradually tend towards a vertical posture. It is worth noting that... The first gas flow rate of the first gas control mechanism 11 is kept under control to prevent the wafer from tilting excessively during the repositioning process. When the wafer orientation approaches vertical, the third detection device becomes untriggered because the wafer edge leaves the sensing area. If the second detection device 161 is still untriggered at this time, the control device 15 detects this change in state and controls the slitting mechanism 10 to continue moving until the third detection device is triggered again. The blowing operation is performed in a cyclical manner, and the wafer position and orientation are further optimized in each cycle until both the first detection device 160 and the second detection device 161 are triggered and the third detection device is triggered, determining that the wafer is in a vertical orientation and is in the peeling position. The control device 15 controls the first gas flow rate of the first gas control mechanism 11 and the second gas flow rate of the second gas control mechanism 12 to return to the preset value and maintain stable blowing.

[0069] For example, when the first detection device 160 is not triggered and the second detection device 161 is triggered, the control device 15 determines that the wafer is in a forward-tilted posture, that is, the wafer is tilted towards the side closer to the baffle 16. It then controls the slitting mechanism 10 to move, causing the third detection device to trigger, at which point the slitting mechanism 10 stops moving. The control device 15 controls the first gas control mechanism 11 and the second gas control mechanism 12 to open synchronously, with initial gas supply equal (i.e., the gas volumes of the first gas and the second gas are equal), both being preset values. Then, the gas volume of the first gas in the first gas control mechanism 11 is gradually increased, meaning the gas volume of the first gas output by the first gas control mechanism 11 is greater than the gas volume of the second gas output by the second gas control mechanism 12. This drives the wafer to tilt away from the baffle 16 and gradually tend towards a vertical posture. It is worth noting that the gas volume of the second gas in the second gas control mechanism 12 is maintained under control. Control is used to prevent the wafer from tilting excessively during the repositioning process. When the wafer's orientation approaches vertical, the third detection device becomes untriggered because the wafer edge leaves the sensing area. If the first detection device 160 is still untriggered at this time, the control device 15 detects this change in state and controls the slitting mechanism 10 to move until the third detection device is triggered again, and the blowing operation is performed in a cyclical manner. When neither the first detection device 160 nor the second detection device 161 is triggered, the control device 15 controls the entire crystal rod to move towards the baffle until both the first detection device 160 and the second detection device 161 are triggered and the third detection device is triggered, determining that the wafer is in a vertical orientation and is in the peeling position. The control device 15 controls the first gas volume of the first gas control mechanism 11 and the second gas volume of the second gas control mechanism 12 to return to the preset value, maintaining stable blowing.

[0070] In some embodiments, the wafer pick-up device removes the wafer, completing the wafer stripping process. Specifically, when the wafer is adjusted to the stripping posture, the wafer pick-up device passes through the pick-up window of the baffle 16 into the working area, adsorbs and removes the wafer, completing the wafer stripping process.

[0071] In summary, the wafer stripping method of this application embodiment, by setting a baffle with a first detection device and a second detection device on one side of the carrier groove, and setting a slitting device above the baffle, realizes real-time monitoring of the wafer tilt state. The slitting device blows air on the surface side of the wafer based on the wafer tilt state, effectively correcting the wafer posture, facilitating wafer stripping, reducing internal wafer damage and cracks, and wafer picking abnormalities of the wafer picking device. In addition, it also reduces the risk of wafer dicing and the probability of vacuum generator failure, ensuring continuous production, improving product yield, and increasing production efficiency.

[0072] It is worth mentioning that the above steps are only examples, and the order of the steps can be adjusted without conflict.

[0073] Although exemplary embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above exemplary embodiments are merely illustrative and are not intended to limit the scope of this application. Various changes and modifications can be made therein by those skilled in the art without departing from the scope and spirit of this application. All such changes and modifications are intended to be included within the scope of this application as claimed in the appended claims.

[0074] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of this application may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.

[0075] Similarly, it should be understood that, in order to streamline this application and aid in understanding one or more of the various inventive aspects, features of this application may sometimes be grouped together in a single embodiment, figure, or description thereof in the description of exemplary embodiments of this application. However, this approach should not be construed as reflecting an intention that the claimed application requires more features than are expressly recited in each claim. Rather, as reflected in the corresponding claims, its inventive point lies in solving the corresponding technical problem with features fewer than all features of a single disclosed embodiment. Therefore, the claims following the detailed description are hereby expressly incorporated into that detailed description, wherein each claim itself is a separate embodiment of this application.

[0076] Those skilled in the art will understand that, apart from the mutual exclusion of features, all features disclosed in this specification (including the accompanying claims, abstract, and drawings) and all processes or elements of any method or apparatus so disclosed may be combined in any combination. Unless otherwise expressly stated, each feature disclosed in this specification (including the accompanying claims, abstract, and drawings) may be replaced by an alternative feature that serves the same, equivalent, or similar purpose.

[0077] Furthermore, those skilled in the art will understand that although some embodiments herein include certain features but not others included in other embodiments, combinations of features from different embodiments are intended to be within the scope of this application and form different embodiments. For example, in the claims, any one of the claimed embodiments can be used in any combination.

[0078] The above description is merely a specific embodiment or illustration of the embodiments of this application. The scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. The scope of protection of this application shall be determined by the scope of the claims.

Claims

1. A wafer stripping device, characterized in that, The wafer lift-off device includes: A carrier groove is used to accommodate a crystal rod, wherein multiple wafers constitute the crystal rod; A baffle is disposed on one side of the bearing groove. The baffle is provided with a first detection device and a second detection device spaced apart in the vertical direction. The first detection device and the second detection device are configured to detect the tilt state of the wafer. A slicing device is disposed above the baffle and at least partially located on the side of the baffle away from the crystal rod. The slicing device is configured to move along the axial direction of the crystal rod to above the wafer and blow air onto the surface side of the wafer based on the tilt state of the wafer. The wafer slicing device includes a first gas control mechanism, a second gas control mechanism, and a control device. The first gas control mechanism is used to supply gas to a first surface side of the wafer, and the second gas control mechanism is used to supply gas to a second surface side of the wafer. The first surface side and the second surface side are arranged opposite to each other. The control device is electrically connected to the first gas control mechanism and the second gas control mechanism. The control device is configured to control the gas volume difference between the first gas control mechanism and the second gas control mechanism based on the tilt state.

2. The wafer stripping apparatus as described in claim 1, characterized in that, The slicing device includes: The segmented mechanism is provided with a first air inlet and a second air inlet at intervals, and a first air outlet and a second air outlet are provided on the segmented mechanism. The first air outlet and the first air inlet are connected, and the second air outlet and the second air inlet are connected. A third detection device is disposed on the slicing mechanism. The third detection device is used to detect the relative position between the wafer and the slicing mechanism, and outputs a trigger signal when it detects that the relative position is the position of the wafer corresponding to the central region position of the slicing mechanism in its moving direction. A movable component, connected to the slicing mechanism, is used to drive the slicing mechanism to move along the axial direction of the crystal rod; The first gas control mechanism is connected to the first air inlet and is used to provide a first gas to the first air inlet. The first gas is discharged from the first air outlet and ejected toward the first surface side of the wafer. The second gas control mechanism is connected to the second air inlet and is used to provide a second gas to the second air inlet. The second gas is discharged from the second air outlet and ejected toward the second surface side of the wafer. The control device is also electrically connected to the third detection device and the moving member, and is configured to control the moving member to drive the slicing mechanism to move, and to control the first gas control mechanism and the second gas control mechanism to output gas in response to the trigger signal.

3. The wafer stripping apparatus as described in claim 2, characterized in that, The first gas control mechanism includes a first gas pipeline and a first adjustment mechanism disposed on the first gas pipeline. One end of the first gas pipeline is connected to the first air inlet, and the other end of the first gas pipeline is connected to a gas source. The first adjustment mechanism is used to adjust the amount of the first gas flowing into the segmentation mechanism through the first gas pipeline.

4. The wafer stripping apparatus as described in claim 2, characterized in that, The second gas control mechanism includes a second gas pipeline and a second adjustment mechanism disposed on the second gas pipeline. One end of the second gas pipeline is connected to the second air inlet, and the other end of the second gas pipeline is connected to a gas source. The second adjustment mechanism is used to adjust the amount of the second gas flowing into the segmentation mechanism through the second gas pipeline.

5. The wafer stripping apparatus as described in claim 2, characterized in that, The moving component is provided with a first moving part and a second moving part at both ends in its moving direction, wherein the first moving part is further provided with a driving device, the driving device being configured to drive the segmentation mechanism to move based on the control signal output by the control device.

6. The wafer stripping apparatus as described in claim 2, characterized in that, The first gas outlet and the second gas outlet are respectively disposed on one side of the slitting mechanism facing the wafer, wherein the gas outlet of the first gas outlet is inclined towards the central region of the slitting mechanism, and the gas outlet of the second gas outlet is inclined towards the central region of the slitting mechanism.

7. The wafer stripping apparatus as described in claim 2, characterized in that, The first air inlet and the second air inlet are disposed on the side of the slitting mechanism away from the wafer, wherein the first air inlet and the second air inlet are spaced apart in the moving direction of the slitting mechanism, the slitting mechanism has a recessed portion and a straight portion, the top of the recessed portion and the straight portion are connected, the first air inlet is disposed on the top of the recessed portion, and the second air inlet is disposed on the straight portion.

8. The wafer stripping apparatus as described in claim 2, characterized in that, The first air outlet and the second air outlet are spaced apart in the moving direction of the slicing mechanism, and the distance between the first air outlet and the top of the wafer is less than the distance between the second air outlet and the top of the wafer.

9. The wafer stripping apparatus as described in claim 2, characterized in that, The third detection device is disposed on the side of the slitting mechanism facing the wafer, and is located in the central region of the slitting mechanism in its direction of movement.

10. The wafer stripping apparatus as described in claim 2, characterized in that, The first air outlet is close to the baffle, the second air outlet is away from the baffle, and the control device is further configured as follows: Based on the tilt state, the gas volume difference between the output gases of the first gas control mechanism and the second gas control mechanism is controlled, wherein, When the tilted state is a vertical state, the amount of the first gas output by the first gas control mechanism is equal to the amount of the second gas output by the second gas control mechanism. When the tilt state is that the wafer is tilted toward the side away from the baffle, the amount of the first gas output by the first gas control mechanism is less than the amount of the second gas output by the second gas control mechanism. When the tilt state is such that the wafer is tilted toward the side closer to the baffle, the amount of the first gas output by the first gas control mechanism is greater than the amount of the second gas output by the second gas control mechanism.

11. The wafer stripping apparatus as described in claim 2, characterized in that, The segmentation mechanism also has at least one clearance recess, the at least one clearance recess, the first air outlet and the second air outlet are located on the same side of the segmentation mechanism, and the clearance recess is disposed between the first air outlet and the second air outlet.

12. A wafer lift-off method, characterized in that, The wafer stripping method employs the wafer stripping apparatus as described in any one of claims 2-11 to perform wafer stripping, and the wafer stripping method includes: The crystal rod is placed in the carrier groove, and the tilt state of the wafer is determined by the first and second detection devices on the baffle. The control device controls the moving component based on the tilt state to drive the slicing mechanism to move along the axial direction of the crystal rod; When the third detection device detects that the relative position between the wafer and the slicing mechanism is such that the position of the wafer corresponds to the central region position of the slicing mechanism in its direction of movement, it outputs a trigger signal. In response to the trigger signal, the control device controls the first gas control mechanism to output the first gas and the second gas control mechanism to output the second gas.

13. The wafer lift-off method as described in claim 12, characterized in that, Also includes: The first gas control mechanism and the second gas control mechanism are activated to supply gas to the wafer, and the control device determines the amount of the first gas output by the first gas control mechanism and the amount of the second gas output by the second gas control mechanism based on the tilt state. Based on the gas volume of the first gas output by the first gas control mechanism and the gas volume of the second gas output by the second gas control mechanism, the wafer is adjusted to the stripping posture. The wafer removal device removes the wafer, completing the wafer stripping process.

14. The wafer lift-off method as described in claim 13, characterized in that, The control device determines the volume of the first gas output by the first gas control mechanism and the volume of the second gas output by the second gas control mechanism based on the tilt state, including: When the tilted state is a vertical state, the control device controls the first gas output by the first gas control mechanism to be equal to the second gas output by the second gas control mechanism. When the tilt state is that the wafer is tilted toward the side away from the baffle, the amount of the first gas output by the first gas control mechanism is less than the amount of the second gas output by the second gas control mechanism. When the tilt state is such that the wafer is tilted toward the side closer to the baffle, the amount of the first gas output by the first gas control mechanism is greater than the amount of the second gas output by the second gas control mechanism.

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