Heteroepitaxial niobium pentoxide thin film, preparation method and application thereof

Abstract

The application discloses a hetero-epitaxial niobium pentoxide thin film and a preparation method and application thereof, and belongs to the technical field of thin film deposition. The preparation method comprises the following steps: placing a substrate and target material in a vacuum system, bombarding the target material through a pulse laser, and depositing an initial hetero-epitaxial niobium pentoxide thin film on the surface of the substrate; and performing annealing treatment on the initial hetero-epitaxial niobium pentoxide thin film to obtain the hetero-epitaxial niobium pentoxide thin film. The hetero-epitaxial niobium pentoxide thin film is grown by using a pulse laser deposition system, the deposition rate of the thin film is high, the repeatability is good, the prepared thin film can keep a high consistency in purity and a stoichiometric ratio with the target material, the process control can be performed on a nanometer scale, the thickness of the thin film can be adjusted to a nanometer level, the preparation method is simple, the target material can be reused, the growth parameters can be flexibly regulated, the growth state of the thin film can be monitored in real time, and a high-quality hetero-interface structure is obtained.

Description

Technical Field

[0001] This invention relates to the field of thin film deposition technology, and in particular to a heteroepitaxial niobium pentoxide thin film, its preparation method, and its application. Background Technology

[0002] Niobium pentoxide (Nb₂O₅) is a high-performance transition metal oxide with unique dielectric, optical, and catalytic properties, attracting widespread attention from academia and engineering applications in recent years. As a material with high chemical stability and strong environmental compatibility, niobium pentoxide exhibits excellent high dielectric constant, wide bandgap (~3.4 eV), and efficient ion transport capabilities, thus showing significant application prospects in microwave communication devices, optical coatings, photocatalytic water splitting, and lithium-ion batteries.

[0003] However, compared with bulk single crystals, the growth of high-quality single-crystal niobium pentoxide thin films faces more complex process challenges, mainly in the following aspects: First, niobium pentoxide single-crystal thin films need to be epitaxially grown on specific single-crystal substrates, but their lattice constants differ significantly from most common substrates, leading to interfacial lattice mismatch, causing defects such as dislocations and twins, and destroying the single crystallization and continuity of the film; Second, niobium pentoxide has a complex crystal structure, with multiple crystal phases such as orthorhombic phase (T- and TT-), monoclinic phase (H-), and tetragonal phase (M-). The growth of single-crystal thin films is prone to multi-phase coexistence induced by temperature fluctuations or interfacial energy differences, resulting in enhanced optical scattering or non-uniform electrical properties. Summary of the Invention

[0004] The main objective of this invention is to provide a heteroepitaxial niobium pentoxide thin film, its preparation method, and its application, thereby solving the technical problems of easy crystallization defects and poor heteroepitaxial interfaces in the prepared niobium pentoxide thin film.

[0005] To achieve the above objectives, the present invention provides a method for preparing heteroepitaxial niobium pentoxide thin films, comprising the following steps:

[0006] Place the substrate and target in a vacuum system;

[0007] An initial heteroepitaxial niobium pentoxide thin film was deposited on the substrate surface by bombarding the target with a pulsed laser.

[0008] The initial heteroepitaxial niobium pentoxide film was annealed to obtain a heteroepitaxial niobium pentoxide film.

[0009] In some embodiments of the present invention, the substrate comprises a single-crystal substrate.

[0010] In some embodiments of the present invention, the substrate is made of at least one of strontium titanate and lanthanum aluminate.

[0011] In some embodiments of the present invention, the substrate is oriented at (100).

[0012] In some embodiments of the present invention, the size of the substrate is 5mm × 5mm × 0.5mm.

[0013] In some embodiments of the present invention, the target material includes Nb2O5; and / or,

[0014] The purity of the target material is above 99.99%; and / or,

[0015] The target material has a diameter of 25.6 mm.

[0016] In some embodiments of the present invention, the vacuum system is evacuated to 5 × 10⁻⁶. -5 Pa; and / or,

[0017] The deposition environment is a constant oxygen partial pressure environment of 0.1 Pa to 1.3 Pa; and / or,

[0018] The deposition distance between the substrate and the target is 1cm to 10.5cm.

[0019] In some embodiments of the present invention, the substrate is heated to 600°C to 800°C before the pulsed laser bombards the target.

[0020] In some embodiments of the present invention, the wavelength of the pulsed laser is 248 nm; and / or,

[0021] The energy of the pulsed laser is 200mJ~300mJ; and / or,

[0022] The frequency of the pulsed laser is 4Hz~6Hz, and / or,

[0023] The intensity of the pulsed laser is 1 J / cm. 2 ~3 J / cm 2 .

[0024] In some embodiments of the present invention, the annealing temperature is 750°C to 850°C, and the annealing time is 8h to 10h.

[0025] In some embodiments of the present invention, the thickness of the heteroepitaxial niobium pentoxide thin film is 10 nm to 100 nm.

[0026] The present invention also provides a heteroepitaxial niobium pentoxide thin film, which is prepared by the heteroepitaxial niobium pentoxide thin film preparation method described above.

[0027] The present invention also provides an application of the heteroepitaxial niobium pentoxide thin film as described above in the fields of electricity, optics, microelectronics, catalysis, or batteries.

[0028] The beneficial effects that this invention can achieve are:

[0029] This invention utilizes a pulsed laser deposition system to grow heteroepitaxial niobium pentoxide thin films with single-crystal structures. The deposition rate is fast and reproducible, and the prepared films maintain a high degree of purity and stoichiometry consistent with the target material. Furthermore, the process can be controlled at the nanoscale, adjusting the film thickness to the nanometer level, controlling it to 10nm~100nm. Moreover, the preparation method is simple, the target material can be reused, and the film growth parameters can be flexibly adjusted, the film growth status can be monitored in real time, crystallization defects can be reduced, and high-quality heteroepitaxial structures can be obtained.

[0030] The method of this invention can be used to prepare heteroepitaxial niobium pentoxide thin films with uniform thickness, smooth surface, good crystallinity, and high-quality heteroepitaxial interfaces with the substrate, which have broad potential applications in optics, microelectronics, catalysis and lithium-ion batteries. Attached Figure Description

[0031] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0032] Figure 1 This is a low-magnification transmission electron microscope (TEM) image of a cross-section of the single-crystal heteroepitaxial niobium pentoxide thin film prepared in Example 1 of the present invention;

[0033] Figure 2 This is the X-ray diffraction (XRD) pattern of the single-crystal heteroepitaxial niobium pentoxide thin film prepared in Example 1 of this invention;

[0034] Figure 3 The X-ray photoelectron spectroscopy (XPS) of the single-crystal heteroepitaxial niobium pentoxide thin film prepared in Example 1 of this invention;

[0035] Figure 4 This is a cross-sectional high-resolution atomic image (STEM-HAADF) of the single-crystal heteroepitaxial niobium pentoxide thin film prepared in Example 1 of this invention.

[0036] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0037] It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0038] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0039] In this invention, descriptions involving "first," "second," etc., are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. Furthermore, the technical solutions of the various embodiments can be combined with each other, but only on the basis of being achievable by those skilled in the art. If the combination of technical solutions is contradictory or impossible to implement, such a combination should be considered non-existent and not within the scope of protection claimed by this invention.

[0040] Niobium pentoxide (Nb₂O₅) is a high-performance transition metal oxide with unique dielectric, optical, and catalytic properties, attracting widespread attention from academia and engineering applications in recent years. As a material with high chemical stability and strong environmental compatibility, niobium pentoxide exhibits excellent high dielectric constant, wide bandgap (~3.4 eV), and efficient ion transport capabilities, thus showing significant application prospects in microwave communication devices, optical coatings, photocatalytic water splitting, and lithium-ion batteries. However, compared with bulk single crystals, the growth of high-quality single-crystal niobium pentoxide thin films faces more complex process challenges, mainly in the following aspects: First, niobium pentoxide single-crystal thin films need to be epitaxially grown on specific single-crystal substrates, but their lattice constants differ significantly from most common substrates, leading to interfacial lattice mismatch, causing defects such as dislocations and twins, and destroying the single crystallization and continuity of the film; Second, niobium pentoxide has a complex crystal structure, with multiple crystal phases such as orthorhombic phase (T- and TT-), monoclinic phase (H-), and tetragonal phase (M-). The growth of single-crystal thin films is prone to multi-phase coexistence induced by temperature fluctuations or interfacial energy differences, resulting in enhanced optical scattering or non-uniform electrical properties.

[0041] In view of this, the present invention provides a heteroepitaxial niobium pentoxide thin film and a method for preparing the same, the method comprising the following steps:

[0042] S10. Place the substrate and target in a vacuum system;

[0043] S20. An initial heteroepitaxial niobium pentoxide thin film is deposited on the substrate surface by bombarding the target with a pulsed laser.

[0044] S30. Anneal the initial heteroepitaxial niobium pentoxide film to obtain a heteroepitaxial niobium pentoxide film.

[0045] In some embodiments, the vacuum system is evacuated to 5 × 10⁻⁶. -5 Pa can reduce interference from impurities during the deposition process, ensuring the purity and quality of the film.

[0046] In some embodiments, the substrate material includes at least one of strontium titanate (SrTiO3) and lanthanum aluminate (LaAlO3). Substrates of the above materials can provide good lattice matching for niobium pentoxide thin films, reduce lattice defects in the films, help improve the crystal quality and epitaxial growth effect of the films, and thus enhance the optical, electrical and other properties of the films, making them have broad application prospects in the fields of electronics and optics.

[0047] In some embodiments, the substrate is oriented (100), which can provide a specific crystal orientation for the epitaxial growth of niobium pentoxide thin films, which is beneficial for the formation of a highly ordered crystal structure during the growth process, further reducing lattice defects and improving the crystal quality of the thin films.

[0048] In some embodiments, the size of the substrate is 5mm × 5mm × 0.5mm.

[0049] In some embodiments, the target material includes Nb2O5, which can directly provide the components required for preparing niobium pentoxide thin films, and the target material is widely available and can be reused.

[0050] In some embodiments, the purity of the target material is above 99.99%, for example, the purity of Nb2O5 is above 99.99%, which enables the preparation of high-purity niobium pentoxide thin films.

[0051] In some embodiments, the target diameter is 25.6 mm, which helps to meet the target size requirements of the pulsed laser deposition system, ensuring that the laser can uniformly bombard the target surface and achieve uniform thin film deposition.

[0052] In some embodiments, the target material is a circular sheet sintered from Nb2O5 powder with a purity of 99.99% or higher, and the diameter of the circular sheet is 25.6 mm.

[0053] In some embodiments, the surface of the substrate deposited with heteroepitaxial niobium pentoxide thin film is polished. Polishing helps to improve the surface smoothness of the film and enhance the quality of the film.

[0054] In some embodiments, before depositing the heteroepitaxial niobium pentoxide thin film, the surface of the substrate is cleaned. The cleaning method includes: cleaning the substrate surface with acetone, attaching the substrate to the substrate holder using conductive silver paste, heating it at 60°C for 10 min with a baking lamp, and then blowing away surface dust with argon gas. This embodiment effectively removes organic impurities and contaminants from the substrate surface through cleaning and baking heating, which is beneficial for depositing a high-quality niobium pentoxide thin film.

[0055] In some embodiments, the deposition distance between the substrate and the target is 1 cm to 10.5 cm, which can be 1 cm, 2 cm, 3 cm, 4 cm, 5 cm, 6 cm, 7 cm, 8 cm, 9 cm, 10 cm, 10.5 cm, etc. This distance ensures that the material evaporated from the target retains sufficient energy before reaching the substrate, achieving uniform film deposition. It also avoids damage to the substrate caused by excessively high energy from the evaporated material due to excessively close proximity.

[0056] In some embodiments, during the deposition process, the substrate and the target rotate in opposite directions at the same speed, which can largely ensure the uniformity of the film formation.

[0057] In some embodiments, before the pulsed laser bombards the target, the substrate temperature is maintained at 600°C to 800°C, which can be 600°C, 650°C, 700°C, 750°C, 800°C, etc. Heating the substrate before deposition promotes the diffusion and crystallization of the target vaporized material deposited on the substrate surface. The atoms on the substrate surface have sufficient heat to rearrange and form a stable crystalline structure, which helps reduce lattice defects and improve the crystal quality of the thin film. Under these temperature conditions, the interaction between the substrate and the thin film is enhanced, promoting the epitaxial growth of the thin film and forming a uniform and dense film. Furthermore, the high temperature effectively removes organic impurities from the substrate surface, providing a clean substrate for thin film growth and resulting in better flatness of the deposited film.

[0058] In some embodiments, before the pulsed laser bombards the target, the temperature is increased to 600°C~800°C at a rate of 10°C / min and held for 15 min. This can effectively remove organic impurities attached to the substrate, providing a clean substrate for the growth of the thin film and resulting in better flatness of the deposited film.

[0059] In some embodiments, the deposition environment is a constant oxygen partial pressure environment of 0.1 Pa to 1.3 Pa, which helps to accurately control the stoichiometry of the film, ensure the uniformity of oxygen content in the film, avoid defects caused by insufficient oxidation or over-oxidation, optimize the crystallization of the film, reduce crystallization defects, and improve crystallization quality.

[0060] In some embodiments, using a krypton fluoride laser to emit pulsed laser light to bombard the target material can increase the energy density, allowing the material on the target surface to evaporate instantly and achieve a rapid deposition effect.

[0061] In some embodiments, the wavelength of the pulsed laser is 248nm. 248nm is in the ultraviolet light range and has high energy. Moreover, the niobium pentoxide target has good absorption characteristics for ultraviolet light. The wavelength of 248nm can cause the material on the target surface to evaporate instantly, achieving efficient deposition and obtaining a thin film of superior quality.

[0062] In some embodiments, the energy of the pulsed laser is 200mJ~300mJ, which can be 200mJ, 220mJ, 230mJ, 250mJ, 280mJ, 300mJ, etc., which can provide sufficient energy to ensure that the material on the target surface can be evaporated efficiently, while avoiding substrate damage or target overheating caused by excessive energy.

[0063] In some embodiments, the frequency of the pulsed laser is 4Hz to 6Hz, such as 4Hz, 5Hz, 6Hz, etc., which can provide a sufficient pulse repetition rate to ensure a continuous supply of the target material to be evaporated, thereby achieving a high deposition rate, obtaining a continuously and uniformly grown film, and effectively controlling the thickness of the film.

[0064] In some embodiments, the intensity of the pulsed laser is 1 J / cm². 2 ~3 J / cm 2 It can be 1J / cm 2 2J / cm 2 3J / cm 2 This facilitates efficient evaporation of substances on the target surface, while avoiding substrate damage caused by excessive strength or uneven deposition caused by insufficient strength, thereby improving the uniformity and quality of the thin film.

[0065] In this invention, the initial heteroepitaxial niobium pentoxide thin film is annealed, which can effectively improve the crystal quality of the film, help to form a more complete and ordered crystal structure, reduce lattice defects, and also improve the surface smoothness and thickness uniformity of the film.

[0066] In some embodiments, the annealing temperature is 750℃~850℃, which can be 750℃, 800℃, 850℃, etc., and the annealing time is 8h~10h, which can be 8h, 8.5h, 9h, 9.5h, 10h. By adjusting the annealing temperature, the crystallinity of the heteroepitaxial niobium pentoxide thin film can be optimized, crystallization defects can be reduced, and the crystallinity and uniformity of the film can be improved. The above annealing time ensures that the film has sufficient time for relaxation and crystallization, further improving the crystallinity and uniformity of the film, thereby improving the optical and electrical properties of the film.

[0067] In some embodiments, annealing is performed in a vacuum environment.

[0068] In some embodiments, after the initial heteroepitaxial niobium pentoxide thin film deposition is completed, the film is kept at a temperature of 13 min to 16 min, or 15 min, to ensure the relaxation of the film, and then cooled to room temperature, i.e., 20 °C to 30 °C, at a rate of 10 °C / min.

[0069] In some embodiments, the thickness of the heteroepitaxial niobium pentoxide thin film is 10nm~100nm, and can be 10nm, 12nm, 15nm, 18nm, 19nm, 20nm, 25nm, 28nm, 30nm, 32nm, 35nm, 38nm, 40nm, 45nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm, 85nm, 90nm, 95nm, 100nm, etc.

[0070] This invention utilizes a pulsed laser deposition system to grow heteroepitaxial niobium pentoxide thin films with single-crystal structures. The deposition rate is fast and reproducible, and the prepared films maintain a high degree of purity and stoichiometry consistent with the target material. Furthermore, the process can be controlled at the nanoscale, adjusting the film thickness to the nanometer level, controlling it to 10nm~100nm. Moreover, the preparation method is simple, the target material can be reused, and the film growth parameters can be flexibly adjusted, the film growth status can be monitored in real time, crystallization defects can be reduced, and high-quality heteroepitaxial structures can be obtained.

[0071] The method of this invention can be used to prepare heteroepitaxial niobium pentoxide thin films with uniform thickness, smooth surface, good crystallinity, and high-quality heteroepitaxial interfaces with the substrate, which have broad potential applications in optics, microelectronics, catalysis and lithium-ion batteries.

[0072] The technical solution of the present invention will be further described in detail below with reference to specific embodiments. It should be understood that the following specific embodiments are only used to explain the present invention and are not intended to limit the present invention.

[0073] Example 1

[0074] Preparation of substrate and target

[0075] Target material selection: a circular sheet sintered from Nb2O5 powder with a purity of 99.99%;

[0076] Substrate selection: Select lanthanum aluminate (LaAlO3) with orientation (100), size of 5 mm × 5 mm × 0.5 mm, and single-sided polishing as the substrate. Clean the surface of the lanthanum aluminate (LaAlO3) substrate with acetone, use conductive silver paste to stick the substrate to the substrate holder, heat it at 60 ℃ for 10 min with a baking lamp, and blow away the surface dust with argon gas.

[0077] sediment

[0078] The processed substrate and target were placed in a vacuum system and evacuated to a vacuum level of 5 × 10⁻⁶. -5 Pa ensures a deposition distance of 1.5 cm between the substrate and the target, and the substrate and target rotate in opposite directions at the same speed to maximize the uniformity of the film formation.

[0079] The substrate was heated to 700 °C at a rate of 10 °C / min and then held for 15 min to remove organic impurities adhering to the substrate. The pulsed laser wavelength was set to 248 nm, the pulsed laser energy to 220 mJ, the pulsed laser frequency to 6 Hz, and the pulsed laser intensity to 1 J / cm². 2 A krypton fluoride laser was used to emit pulsed laser light to bombard the target material, causing the target material to be deposited onto the substrate surface to form an initial heteroepitaxial niobium pentoxide thin film. The above deposition process was carried out under a constant oxygen partial pressure of 1.3 Pa.

[0080] After the film is grown, it is kept at a temperature of 15 min to ensure film relaxation, and then cooled to room temperature at a rate of 10 °C / min.

[0081] annealing

[0082] High-quality single-crystal heteroepitaxial niobium pentoxide thin films were prepared by annealing the initial heteroepitaxial niobium pentoxide thin film under vacuum at 800 ℃ for 8 h.

[0083] Example 2

[0084] In Example 2, a heteroepitaxial niobium pentoxide thin film was prepared using the same method as in Example 1. The difference was that the substrate material in Example 2 was strontium titanate (SrTiO3).

[0085] Example 3

[0086] In Example 3, a heteroepitaxial niobium pentoxide thin film was prepared according to the preparation method of Example 1. The difference was that the energy of the pulsed laser in Example 3 was 300 mJ.

[0087] Example 4

[0088] In Example 4, a heteroepitaxial niobium pentoxide thin film was prepared according to the preparation method of Example 1. The difference was that the frequency of the pulsed laser in Example 4 was 4 Hz.

[0089] Example 5

[0090] Example 5 describes the preparation of a heteroepitaxial niobium pentoxide thin film using the same method as in Example 1. The difference is that the intensity of the pulsed laser in Example 5 is 3 J / cm². 2 .

[0091] Example 6

[0092] In Example 6, a heteroepitaxial niobium pentoxide thin film was prepared according to the preparation method of Example 1. The difference was that the deposition distance between the substrate and the target in Example 6 was 10.5 cm.

[0093] Example 7

[0094] Example 7 prepared a heteroepitaxial niobium pentoxide thin film according to the preparation method of Example 1. The difference is that the deposition environment of Example 7 is a constant oxygen partial pressure environment of 0.1 Pa.

[0095] Example 8

[0096] In Example 8, a heteroepitaxial niobium pentoxide thin film was prepared according to the preparation method of Example 1. The difference was that the annealing temperature of Example 8 was 750 °C and the annealing time was 10 h.

[0097] Example 9

[0098] In Example 9, a heteroepitaxial niobium pentoxide thin film was prepared according to the preparation method of Example 1, except that the substrate temperature in Example 9 was 800 °C.

[0099] Performance testing

[0100] The single-crystal heteroepitaxial niobium pentoxide thin film of Example 1 was used as the test object. The heteroepitaxial niobium pentoxide thin film of Example 1 is represented as T-Nb2O5.

[0101] 1. The single-crystal heteroepitaxial niobium pentoxide thin film was characterized using transmission electron microscopy, such as... Figure 1 As shown, the T-Nb2O5 film has a uniform thickness and a smooth surface, with a thickness of approximately 12 nm.

[0102] 2. T-Nb2O5 was characterized using X-ray diffraction, such as... Figure 2 As shown, the diffraction peaks of the T-Nb2O5 thin film are (180) and (2). 160), indicating that the T-Nb2O5 thin film was epitaxially grown on the LaAlO3(001) substrate, and the out-of-plane orientation relationship between the film and the substrate is T-Nb2O5(180) / / LaAlO3(001).

[0103] 3. T-Nb2O5 was characterized using X-ray photoelectron spectroscopy, such as... Figure 3 As shown, the left image is the XPS full spectrum of the T-Nb2O5 thin film. The C element in the spectrum represents the adsorbed material on the sample surface, used to calibrate the peak positions. The full spectrum contains only Nb and O elements; there is no diffusion of La or Al elements. The right image is the Nb 3d... 5 / 2 The fine spectrum shows two peaks, one at approximately 206.9 eV and the other at 209.6 eV, corresponding to Nb 3d 5 / 2 and Nb 3d 3 / 2 This indicates that the Nb ions in the thin film on the LaAlO3 substrate are in the +5 valence.

[0104] 4. T-Nb2O5 was characterized using a high-angle annular dark-field scanning transmission electron microscope. Figure 4 The atomic structure arrangement of the Nb2O5 / LaAlO3 heterostructure interface is shown, indicating good interface quality and the acquisition of a high-quality single-crystal heteroepitaxial niobium pentoxide thin film.

[0105] The above are merely preferred embodiments of the present invention and do not limit the patent scope of the present invention. Any equivalent structural or procedural transformations made based on the content of the present invention's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. A method for preparing a heteroepitaxial niobium pentoxide thin film, characterized in that, Includes the following steps: Place the substrate and target in a vacuum system; An initial heteroepitaxial niobium pentoxide thin film is deposited on the substrate surface by bombarding the target with a pulsed laser; after the initial heteroepitaxial niobium pentoxide thin film is deposited, it is kept at a temperature for 13 min to 16 min. The initial heteroepitaxial niobium pentoxide film is annealed to obtain a heteroepitaxial niobium pentoxide film; The wavelength of the pulsed laser is 248 nm; The substrate is made of at least one of strontium titanate and lanthanum aluminate. The orientation of the substrate is (100); The energy of the pulsed laser is 200mJ~300mJ; The frequency of the pulsed laser is 4Hz~6Hz; The intensity of the pulsed laser is 1 J / cm. 2 ~3 J / cm 2 ; The annealing temperature is 750℃~850℃, and the annealing time is 8h~10h.

2. The method for preparing heteroepitaxial niobium pentoxide thin films according to claim 1, characterized in that, The substrate includes a single-crystal substrate; And / or, the size of the substrate is 5mm × 5mm × 0.5mm.

3. The method for preparing heteroepitaxial niobium pentoxide thin films according to claim 1, characterized in that, The target material includes Nb2O5; and / or, The purity of the target material is above 99.99%; and / or, The target material has a diameter of 25.6 mm.

4. The method for preparing heteroepitaxial niobium pentoxide thin films according to claim 1, characterized in that, Evacuate the vacuum system to 5×10⁻⁶. -5 Pa; and / or, The deposition environment is a constant oxygen partial pressure environment of 0.1 Pa to 1.3 Pa; and / or, The deposition distance between the substrate and the target is 1cm to 10.5cm.

5. The method for preparing heteroepitaxial niobium pentoxide thin films according to claim 1, characterized in that, Before the pulsed laser bombards the target, the substrate is heated to 600°C to 800°C.

6. The method for preparing heteroepitaxial niobium pentoxide thin films according to claim 1, characterized in that, The thickness of the heteroepitaxial niobium pentoxide thin film is 10 nm to 100 nm.

7. A heteroepitaxial niobium pentoxide thin film, characterized in that, The heteroepitaxial niobium pentoxide thin film is prepared by the method for preparing heteroepitaxial niobium pentoxide thin film as described in any one of claims 1 to 6.

8. The application of the heteroepitaxial niobium pentoxide thin film as described in claim 7 in the fields of electricity, optics, microelectronics, catalysis, or batteries.

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