Wavelength tuning control system and method for gas real-time detection based on TDLAS technology

Abstract

The application discloses a wavelength tuning control system and method for gas real-time detection based on TDLAS technology, and relates to the technical field of wavelength tuning control, and comprises the following steps: collecting working temperature data and compensation current data of a semiconductor laser under a standard working state; performing reference extraction processing and temperature change extraction processing to obtain reference temperature change data; collecting temperature data of the semiconductor laser in actual working, and calculating temperature change error in real time according to the reference temperature change data; and adjusting and controlling a temperature control device of the semiconductor laser according to the temperature change error; the application is used to solve the problem that the existing wavelength tuning control technology cannot obtain accurate reference standard change parameters while stably and accurately controlling the output wavelength of the laser according to the characteristics of the temperature change rate when the output wavelength of the laser is controlled by controlling the temperature.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of wavelength tuning control, specifically a gas real-time detection wavelength tuning control system and method based on TDLAS technology. BACKGROUND

[0002] Wavelength tuning control technology is a technology that adjusts the output wavelength of a light source to continuously and stably change within a specific range and accurately controls the wavelength position and scanning characteristics. It is widely used in spectral analysis, optical communication, laser radar, and gas detection fields. The core goal is to achieve high-precision control of light wavelengths to meet the wavelength selectivity requirements of optical signals in different application scenarios.

[0003] Existing wavelength tuning control technology often only focuses on the current temperature value and ignores the temperature change rate when controlling the output wavelength of a laser through temperature control. It only adjusts the temperature control power based on the current temperature error without considering the temperature change rate, which may cause serious lag when fast tuning control of the wavelength is required. Moreover, uneven temperature change rate can cause transient wavelength drift of the laser, affecting detection accuracy. The temperature change rate also affects the threshold current and output power of the laser. Controlling only the temperature value can cause power fluctuations during temperature adjustment, which in turn increases the error of the detection results. For example, the patent application with publication number CN115275774A discloses a wavelength control method and system for semiconductor lasers in TDLAS applications. This method does not consider the temperature change rate when controlling the wavelength through temperature control, resulting in insufficient stability and accuracy of wavelength control. Moreover, when controlling the output wavelength of a laser through temperature control, it often needs to obtain referenceable standard parameters according to the actual application scenario. The standard parameters obtained through traditional methods often contain certain noise, which lacks accuracy and precision. Existing wavelength tuning control technology cannot accurately obtain referenceable standard change parameters while stably and accurately controlling the output wavelength of a laser based on the characteristics of the temperature change rate when controlling the output wavelength of a laser through temperature control. SUMMARY

[0004] The present application aims to at least solve one of the technical problems in the prior art, by collecting the working temperature data and compensation current data of the semiconductor laser under standard working condition; performing reference extraction processing and temperature change extraction processing to obtain reference temperature change data; collecting the temperature data of the semiconductor laser in actual working and calculating the temperature change error in real time according to the reference temperature change data; adjusting and controlling the temperature control device of the semiconductor laser according to the temperature change error; so as to solve the problem that the existing wavelength tuning control technology cannot obtain accurate reference standard change parameters while stably and accurately controlling the output wavelength of the laser according to the temperature change rate when controlling the output wavelength of the laser by controlling the temperature.

[0005] To achieve the above-mentioned purpose, in a first aspect, the present application provides a gas real-time detection wavelength tuning control system based on TDLAS technology, comprising a standard acquisition module, a reference extraction module, a data acquisition module and a tuning control module;

[0006] The standard acquisition module is used for collecting the working temperature data and compensation current data of the semiconductor laser under standard working condition;

[0007] The reference extraction module comprises a first processing unit and a second processing unit, the first processing unit is used for reference extraction processing of the working temperature data and compensation current data, and the second processing unit is used for temperature change extraction processing to obtain reference temperature change data;

[0008] The data acquisition module is used for collecting the temperature data of the semiconductor laser in actual working and calculating the temperature change difference in real time according to the reference temperature change data;

[0009] The tuning control module adjusts and controls the temperature control device of the semiconductor laser according to the temperature change difference.

[0010] Further, the standard acquisition module is configured with a standard acquisition strategy, and the standard acquisition strategy comprises:

[0011] Obtaining the output optical power required by the semiconductor laser for real-time detection of gas, denoted as standard output optical power;

[0012] Obtaining the laser wavelength range output by the semiconductor laser for real-time detection of gas, denoted as standard output wavelength range; denoting any one output wavelength in the standard output wavelength range as a standard output wavelength; denoting the minimum output wavelength and the maximum output wavelength in the standard output wavelength range as minimum standard wavelength EX and maximum standard wavelength ED, respectively; and denoting the time period experienced by the laser wavelength output by the semiconductor laser from the minimum standard wavelength to the maximum standard wavelength as a standard change period;

[0013] The state that the semiconductor laser has a standard output wavelength, a standard output optical power, and a standard variation period of the standard output wavelength range is recorded as a standard working state of the semiconductor laser.

[0014] Further, the standard acquisition strategy further comprises:

[0015] The standard output wavelength range is evenly divided into k1 standard output wavelength intervals; and k2 standard output wavelengths are evenly selected from each standard output wavelength interval, and recorded as first standard wavelengths;

[0016] The semiconductor laser is caused to sequentially acquire a working temperature and a compensation current corresponding to the first standard wavelength output by the semiconductor laser under the standard working state, and to record an acquisition time starting from the laser wavelength EX output by the semiconductor laser; the acquisition is repeated multiple times to obtain working temperature data and compensation current data.

[0017] Further, the first processing unit is configured with a first processing strategy, and the first processing strategy comprises:

[0018] For any first standard wavelength recorded as a first output wavelength, the working temperature and the compensation current acquired at different acquisition times for the first output wavelength are sequentially arranged according to the corresponding acquisition times, and recorded as a working temperature sequence and a compensation current sequence; the working temperature sequence and the compensation current sequence are subjected to reference extraction processing to obtain a standard working temperature and a standard compensation current corresponding to the first output wavelength;

[0019] The standard working temperature and the standard compensation current corresponding to all the first standard wavelengths are repeatedly acquired to obtain standard temperature data and standard current data;

[0020] The reference extraction processing comprises: arranging the working temperature sequence and the compensation current sequence in ascending order, and recording them as a first temperature sequence and a first current sequence; calculating the average value and the standard deviation of the k3th percentile to the k4th percentile of the first temperature sequence and the first current sequence, and recording them in order as AP1, AB1, AP2, and AB2, wherein k3 and k4 are set percentiles;

[0021] And the data in the first temperature sequence and the first current sequence that does not belong to the corresponding normal range is marked as abnormal data, and after completion, a second temperature sequence and a second current sequence are obtained; wherein the normal range corresponding to the first temperature sequence is [AP1-k5*AB1, AP1+k5*AB1], and the normal range corresponding to the first current sequence is [AP2-k5*AB2, AP2+k5*AB2], wherein k5 is a set proportion coefficient;

[0022] For any pair of working temperature and compensation current in the second temperature sequence and the second current sequence collected at the same time, sequentially recorded as the first temperature and the first current, if there is abnormal data in the first temperature and the first current, the first temperature and the first current are removed, and the processing of all data in the second temperature sequence and the second current sequence is repeated, and after completion, the third temperature sequence and the third current sequence are obtained.

[0023] Further, the reference extraction processing further comprises:

[0024] The third temperature sequence and the third current sequence are normalized by using the minimum-maximum normalization method according to the data type, and all data sizes are scaled to [0, 1];

[0025] The [0, 1] is uniformly divided into M small intervals, sequentially recorded as interval 1-M; the M small intervals are combined into M*M interval combinations, recorded as temperature current combination interval (i, j), wherein i, j represent interval i and interval j respectively; wherein M is not set interval number;

[0026] The number of corresponding temperature data in the third temperature sequence and the third current sequence collected at the same time and corresponding current data in interval i is counted, recorded as frequency number G(i, j);

[0027] Repeat the counting of the corresponding frequency number of all temperature current combination intervals, and calculate the frequency probability corresponding to each frequency number according to the first formula, the first formula is as follows: Wherein P(i, j) represents the frequency probability;

[0028] All frequency probabilities are accumulated in descending order until the cumulative frequency probability reaches k6, then the accumulation is stopped, wherein k6 is a set threshold probability; the corresponding data of all accumulated frequency probabilities in the third temperature sequence and the third current sequence are counted, respectively recorded as the fourth temperature sequence and the fourth current sequence;

[0029] For any one data in the fourth temperature sequence and the fourth current sequence, recorded as the first data, calculate the data weight Q(v) corresponding to the first data, Q(v)=P(v) / G(v), wherein P(v) represents the frequency probability corresponding to the first data, and G(v) represents the frequency number corresponding to P(v);

[0030] Repeat the acquisition of the data weight corresponding to all data in the fourth temperature sequence and the fourth current sequence, and calculate the reference working temperature and the reference compensation current corresponding to the first output wavelength according to the second formula and the third formula respectively, the second formula is as follows: The third formula is as follows: wherein, BT(v) represents the reference working voltage, BI(v) represents the reference compensation current, U represents the total number of data in the fourth temperature sequence or the fourth current sequence, Tv represents the vth data in the fourth temperature sequence, Iv represents the vth data in the fourth current sequence; and the reference working temperature and the reference collection time corresponding to the reference compensation current are calculated according to the fourth formula, and the fourth formula is as follows: wherein, CR(v) represents the corresponding reference collection time, and SR(v) represents the collection time corresponding to BT(v) and BI(v);

[0031] The reference working temperature, the reference compensation current and the corresponding reference collection time corresponding to all the first standard wavelengths are repeatedly acquired, and are recorded as reference temperature current data.

[0032] Further, the second processing unit is configured with a second processing strategy, and the second processing strategy comprises:

[0033] The reference working temperatures in the reference temperature current data are arranged in ascending order of the corresponding wavelengths, and are recorded as a first reference temperature sequence; and the reference collection times corresponding to each reference working temperature in the first reference temperature sequence are arranged in the corresponding order, and are recorded as a reference time sequence; and any two adjacent reference working temperatures in the first reference temperature sequence are recorded as a reference temperature interval.

[0034] The reference temperature change rate of any one reference temperature interval in the first reference temperature sequence is calculated according to a fifth formula, and the fifth formula is as follows: , and the reference temperature change data are obtained after the calculation.

[0035] Further, the data acquisition module is configured with a data acquisition strategy, and the data acquisition strategy comprises:

[0036] In the actual working process of the semiconductor laser, the theoretical output wavelength of the semiconductor laser is acquired at a first time interval, and the actual working temperature and the actual compensation current of the semiconductor laser are collected at the same time, and the collection time is recorded, and is recorded as actual working data, wherein the first time interval is t1.

[0037] For the currently collected actual working temperature, recorded as a first actual temperature, the actual working temperature collected last time corresponding to the first actual temperature is recorded as a second actual temperature, and the actual temperature change rate SW of the first actual temperature is calculated according to the first actual temperature, the second actual temperature and the corresponding collection time.

[0038] The theoretical output wavelengths corresponding to the first actual temperature and the second actual temperature are respectively recorded as a first theoretical wavelength LP1 and a second theoretical wavelength LP2 in order; and the wavelength interval contained in LP1 and LP2 is recorded as an actual change interval.

[0039] Further, the data acquisition strategy further comprises:

[0040] acquiring a reference temperature interval corresponding to the first standard wavelength contained in the actual variation interval, denoted as a containing reference interval; calculating a weighted average of the reference temperature variation rate corresponding to the containing reference interval according to a proportion of the first standard wavelength corresponding to the containing reference interval in the actual variation interval, to obtain a theoretical temperature variation rate LW of the first actual temperature;

[0041] calculating a temperature variation error YW according to the theoretical temperature variation rate LW and the actual temperature variation rate SW, YW = |LW-SW|.

[0042] Further, the tuning control module is configured with a tuning control strategy, and the tuning control strategy comprises:

[0043] arranging the reference temperature variation data in ascending order, denoted as a temperature variation sequence, acquiring a minimum value and a maximum value of the temperature variation sequence, denoted as WX and WD respectively in order, dividing [WX, WD] into k7 variation subintervals uniformly, and counting the temperature variation sequence contained in each variation subinterval, wherein k7 is the number of intervals set;

[0044] acquiring a reference temperature variation rate corresponding to the containing reference interval of the actual variation interval, denoted as a containing temperature variation rate, denoting the variation subinterval containing the most containing temperature variation rates as a reference variation subinterval, acquiring a range of the reference temperature variation rate in the reference variation subinterval, denoted as a reference range CE;

[0045] denoting k8*CE as a first variation threshold AY1 and k9*CE as a second variation threshold AY2; wherein k8 and k9 are proportion coefficients set, k9>k8;

[0046] if YW<AY1, the power of the temperature control device is not adjusted; if AY1≤YW<AY2, the power of the temperature control device is adjusted in a small amplitude; and if AY2≤YW, the power of the temperature control device is adjusted in a large amplitude.

[0047] In a second aspect, the application provides a wavelength tuning control method for real-time gas detection based on TDLAS technology, comprising the following steps:

[0048] acquiring working temperature data and compensation current data of the semiconductor laser under a standard working state;

[0049] performing reference extraction processing and temperature variation extraction processing on the working temperature data and the compensation current data to obtain reference temperature variation data;

[0050] Collecting temperature data of the semiconductor laser in actual work, and calculating temperature variation error in real time according to reference temperature variation data;

[0051] Adjusting and controlling the temperature control device of the semiconductor laser according to the temperature variation error.

[0052] The present application has the following beneficial effects: the present application collects corresponding working temperature data and compensation current data of the semiconductor laser in the standard working state, extracts reference from the working temperature data and the compensation current data, and performs temperature variation extraction processing to obtain reference temperature variation data; the present application collects temperature data of the semiconductor laser in actual work, and calculates temperature variation error in real time according to the reference temperature variation data; the present application adjusts and controls the temperature control device of the semiconductor laser according to the temperature variation error; when the output wavelength of the laser is controlled by controlling the temperature, the accurate standard variation parameters can be obtained, and the output wavelength of the laser is stably and accurately controlled according to the characteristics of the temperature variation rate.

[0053] The present application can eliminate noise in the temperature and current data, effectively eliminate abnormal data interference, ensure the accuracy of the reference temperature and the compensation current, and improve the reliability of the reference temperature and current data through multi-stage data cleaning and statistical analysis by reference extraction processing; based on the wavelength interval division and the weighted average mechanism, the temperature range corresponding to the output wavelength range is evenly divided into multiple intervals, the reference temperature variation rate is calculated for each interval, and the weighted average is performed according to the proportion corresponding to the actual variation interval, so as to match the theoretical temperature variation rate of the current working wavelength of the laser in real time and adapt to the temperature control demand under different wavelengths; the temperature control device is adjusted and controlled through the temperature variation error, so that the transient wavelength drift of the laser caused by the uneven temperature variation rate can be avoided, the robustness of the wavelength control is improved, and the detection result is more accurate. BRIEF DESCRIPTION OF DRAWINGS

[0054] Figure 1 It is a principle block diagram of the system of the present application;

[0055] Figure 2 It is a step flow chart of the method of the present application;

[0056] Figure 3 It is a data acquisition strategy flow chart of the present application;

[0057] Figure 4 It is a tuning control strategy flow chart of the present application;

[0058] Figure 5 It is a structure schematic diagram of the electronic device of the present application. DETAILED DESCRIPTION

[0059] With reference to the accompanying drawings, the technical solutions in the embodiments of the present application will be clearly and completely described below, obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of the present application.

[0060] Embodiment 1, please refer to Figure 1 As shown in the figure, the present application provides a wavelength tuning control system for real-time gas detection based on TDLAS technology, which comprises a standard acquisition module, a reference extraction module, a data acquisition module and a tuning control module;

[0061] The standard acquisition module is used for acquiring the working temperature data and the compensation current data of the semiconductor laser under the standard working state;

[0062] The standard acquisition module is configured with a standard acquisition strategy, and the standard acquisition strategy comprises: acquiring the output optical power required by the semiconductor laser for real-time detection of gas, denoted as standard output optical power; the standard output optical power is a reference power value for stable working of the laser, and directly affects the signal-to-noise ratio of the detection signal; if the power is too low, it will result in weak gas absorption signal; and if the power is too high, it may cause nonlinear distortion of the laser;

[0063] Acquiring the laser wavelength range output by the semiconductor laser for real-time detection of gas, denoted as standard output wavelength range; the wavelength interval that needs to be covered by the laser is the target range of subsequent wavelength tuning; for example, when detecting CO2, the absorption line near 1572nm needs to be covered;

[0064] Denoting any one of the output wavelengths in the standard output wavelength range as a standard output wavelength; denoting the minimum output wavelength and the maximum output wavelength in the standard output wavelength range as minimum standard wavelength EX and maximum standard wavelength ED respectively, and denoting the time period experienced by the laser wavelength output by the semiconductor laser from the minimum standard wavelength to the maximum standard wavelength as a standard change period;

[0065] Denoting the state that the output wavelength of the semiconductor laser is the standard output wavelength, the output optical power is the standard output optical power, and the change period of the standard output wavelength range is the standard change period as the standard working state of the semiconductor laser; ensuring that the data collected subsequently comes from a stable and repeatable working point;

[0066] Dividing the standard output wavelength range into k1 standard output wavelength intervals uniformly; selecting k2 standard output wavelengths uniformly from each standard output wavelength interval, denoted as first standard wavelength; k1 and k2 can be set according to specific application scenarios;

[0067] Let the semiconductor laser in the standard working state, in turn, collect the working temperature and the compensation current size corresponding to the first standard wavelength of the laser wavelength output by the semiconductor laser, and record the collection time starting from the laser wavelength output by the semiconductor laser as EX; repeat the collection multiple times to obtain the working temperature data and the compensation current data respectively; the multiple collection can reflect the repeatability of the laser under the same conditions, and ensure the reliability of the data;

[0068] In the specific implementation process, the multi-dimensional data of the laser under the standard state is systematically obtained, which provides a solid foundation for subsequent reference value calculation and temperature change rate modeling; these data are the original basis for subsequent tuning control, which fundamentally determines the accuracy and stability of the wavelength tuning control.

[0069] The reference extraction module includes a first processing unit and a second processing unit, the first processing unit is used for reference extraction processing of the working temperature data and the compensation current data, and the second processing unit is used for temperature change extraction processing to obtain reference temperature change data;

[0070] The first processing unit is configured with a first processing strategy, and the first processing strategy includes: for any one first standard wavelength, denoted as the first output wavelength, for the working temperature and the compensation current size collected under different collection times of the first output wavelength, they are arranged in turn according to the corresponding collection times, denoted as the working temperature sequence and the compensation current sequence; the working temperature sequence and the compensation current sequence are respectively subjected to reference extraction processing to obtain the standard working temperature and the standard compensation current corresponding to the first output wavelength;

[0071] All the standard working temperatures and the standard compensation currents corresponding to the first standard wavelength are repeatedly obtained to obtain the standard temperature data and the standard current data;

[0072] The reference extraction processing includes: the working temperature sequence and the compensation current sequence are arranged in order from small to large, respectively denoted as the first temperature sequence and the first current sequence; the average value and the standard deviation of the k3th percentile to the k4th percentile of the first temperature sequence and the first current sequence are calculated respectively, denoted as AP1, AB1, AP2 and AB2 in order, wherein k3 and k4 are set percentiles; wherein AP1 and AB1 represent the average value and the standard deviation corresponding to the first temperature sequence, wherein AP2 and AB2 represent the average value and the standard deviation corresponding to the first current sequence; in this embodiment, k3=10, k4=90; that is, the average value and the standard deviation of the middle 90% are obtained, which can cover most of the normal data and eliminate the influence of extreme abnormal values;

[0073] and the data in the first temperature sequence and the first current sequence that does not belong to the corresponding normal range is marked as abnormal data, and after completion, a second temperature sequence and a second current sequence are obtained; wherein the normal range corresponding to the first temperature sequence is [AP1-k5*AB1, AP1+k5*AB1], and the normal range corresponding to the first current sequence is [AP2-k5*AB2, AP2+k5*AB2], wherein k5 is a set proportion coefficient; in this embodiment, k5=2;

[0074] For any pair of working temperature and compensation current collected at the same time in the second temperature sequence and the second current sequence, the first temperature and the first current are sequentially marked, if there is abnormal data in the first temperature and the first current, the first temperature and the first current are removed, and the processing of all data in the second temperature sequence and the second current sequence is repeated, and after completion, a third temperature sequence and a third current sequence are obtained; for example, the first temperature and the first current collected for the second time, wherein the first current is not abnormal data, but the first temperature is abnormal data, the first temperature and the first current are removed, the temperature and the current are coupled variables at the same collection time, and single variable abnormality may reflect system failure, and paired removal ensures the consistency of the remaining data; reduce invalid data caused by accidental interference, and avoid pollution of the subsequent processing process;

[0075] The third temperature sequence and the third current sequence are normalized by using the minimum-maximum normalization method according to the data type, and the sizes of all data are scaled to [0, 1]; after normalization, the joint distribution of the two can be analyzed under a unified scale;

[0076] [0, 1] is uniformly divided into M small intervals, which are sequentially marked as interval 1-M; M small intervals are combined into M*M interval combinations, which are marked as temperature current combination interval (i, j), wherein i and j represent interval i and interval j respectively; wherein M is not set interval number; in this embodiment, M=5, that is, every 0.2 is a small interval, and there are 25 interval combinations; for example, temperature current combination interval (1, 2) represents the combination interval [0, 0.2)-[0.2, 0.4);

[0077] The number of corresponding temperature data in the third temperature sequence and the third current sequence collected at the same time and corresponding current data in interval i and interval j is counted, and is marked as frequency number G(i, j); for example, the second collected temperature and compensation current correspond to 0.15 and 0.28 in the third temperature sequence and the third current sequence respectively; then it is located in the combination interval [0, 0.2)-[0.2, 0.4);

[0078] The frequency number corresponding to each temperature-current combination interval is counted repeatedly, and the frequency probability corresponding to each frequency number is calculated according to a first formula, and the first formula is as follows: wherein P(i,j) represents the frequency probability; the synergistic relationship between the temperature and the current is analyzed through the joint distribution, and the rules that cannot be found by traditional single variable analysis are revealed;

[0079] All the frequency probabilities are accumulated in descending order until the accumulated frequency probability reaches k6, and the accumulation is stopped, wherein k6 is a threshold probability set; the data corresponding to all the accumulated frequency probabilities in the third temperature sequence and the third current sequence are counted and are recorded as a fourth temperature sequence and a fourth current sequence respectively; in this embodiment, k6 is 90%; the interval with a high frequency probability represents the temperature-current combination when the laser stabilizes, for example, the interval with the top 90% probability can be regarded as an “effective working area”; the typical working state of the laser is covered, and the data reliability is improved by eliminating the low-probability edge working condition data;

[0080] For any data in the fourth temperature sequence and the fourth current sequence, recorded as a first data, the data weight Q(v) corresponding to the first data is calculated, Q(v)=P(v) / G(v), wherein P(v) represents the frequency probability corresponding to the first data, and G(v) represents the frequency number corresponding to P(v); the weight of the point with a higher frequency is greater, and the subsequent average value calculation is inclined to the working point with a high frequency and high stability;

[0081] The data weight corresponding to all the data in the fourth temperature sequence and the fourth current sequence is obtained repeatedly, and the reference working temperature and the reference compensation current corresponding to the first output wavelength are calculated according to a second formula and a third formula respectively, and the second formula is as follows: and the third formula is as follows: wherein BT(v) represents the reference working voltage, BI(v) represents the reference compensation current, U represents the total number of data in the fourth temperature sequence or the fourth current sequence, Tv represents the vth data in the fourth temperature sequence, and Iv represents the vth data in the fourth current sequence; and the reference acquisition time corresponding to the reference working temperature and the reference compensation current is calculated according to a fourth formula, and the fourth formula is as follows: wherein CR(v) represents the corresponding reference acquisition time, and SR(v) represents the acquisition time corresponding to BT(v) and BI(v); the weighted average makes the data point with a high frequency have a greater influence on the result, and suppresses the interference of noise data;

[0082] The reference working temperature, the reference compensation current and the corresponding reference acquisition time corresponding to all the first standard wavelengths are obtained repeatedly and are recorded as reference temperature-current data;

[0083] The second processing unit is configured with a second processing strategy, which includes: arranging the reference operating temperatures in the reference temperature current data in ascending order according to the corresponding wavelength, and recording them as a first reference temperature sequence; arranging the reference acquisition times corresponding to each reference operating temperature in the first reference temperature sequence in the corresponding order, and recording them as a reference time sequence; and recording any two adjacent reference operating temperatures in the first reference temperature sequence as a reference temperature interval.

[0084] The rate of change of reference temperature for any reference temperature range in the first reference temperature sequence is calculated using the fifth formula; the fifth formula is as follows: After completion, reference temperature change data is obtained; the temperature change rate reflects the dynamic temperature requirements during wavelength tuning, providing a reference for subsequent wavelength control.

[0085] In the specific implementation process, the reference operating temperature and reference compensation current represent the most likely combination of temperature and current in a statistical sense, and can be directly used as the standard operating parameters for that wavelength point; while through multi-stage data cleaning and statistical analysis, noise in the temperature and current data is eliminated to ensure the accuracy of the reference temperature and compensation current.

[0086] The data acquisition module is used to collect temperature data of the semiconductor laser during actual operation and calculate the temperature change difference in real time based on the reference temperature change data.

[0087] The data acquisition module is configured with data acquisition strategies, which include: (Please refer to...) Figure 3 As shown, during the actual operation of the semiconductor laser, the theoretical output wavelength of the semiconductor laser is acquired at a first time interval. The theoretical output wavelength is a manually set output wavelength. At the same time, the actual operating temperature and the actual compensation current of the semiconductor laser are collected and the acquisition time is recorded as the actual operating data. The first time interval is t1, which can be set according to the actual application scenario. It is necessary to ensure that the transient changes in temperature and wavelength are captured to meet the real-time control requirements for data timeliness. In this embodiment, t1 = 20ms.

[0088] The current actual operating temperature is recorded as the first actual temperature, and the previous actual operating temperature corresponding to the first actual temperature is recorded as the second actual temperature. The actual temperature change rate SW of the first actual temperature is calculated based on the first actual temperature, the second actual temperature and the corresponding acquisition time. The actual temperature change rate is calculated through data from two adjacent points to reflect the instantaneous rate of change of the current temperature.

[0089] The theoretical output wavelengths corresponding to the first actual temperature and the second actual temperature are respectively denoted as the first theoretical wavelength LP1 and the second theoretical wavelength LP2; the wavelength ranges contained in LP1 and LP2 are denoted as the actual variation ranges.

[0090] The reference temperature interval corresponding to the first standard wavelength contained in the actual change interval is obtained, denoted as a containing reference interval; a weighted average of the reference temperature change rate corresponding to the containing reference interval is calculated according to the proportion of the first standard wavelength corresponding to the containing reference interval in the actual change interval, to obtain a theoretical temperature change rate LW of the first actual temperature; when the actual wavelength change crosses multiple reference temperature intervals, the weighted average can smoothly transition the rate model of different intervals, avoiding control oscillation caused by sudden changes; the weight proportion reflects the distribution of the wavelength in the interval, so that LW is closer to the actual tuning demand; for example, the containing reference interval spans two reference temperature intervals, reference temperature interval 1 accounts for 40% of the containing reference interval, and reference temperature interval 2 accounts for 60% of the containing reference interval; the reference temperature change rate of the reference temperature interval 1 is 0.200 k / s, and the reference temperature change rate of the reference temperature interval 2 is 0.210 k / s, then LW = 0.4 * 0.20 + 0.6 * 0.21 = 0.206 k / s;

[0091] The temperature change error YW is calculated according to the theoretical temperature change rate LW and the actual temperature change rate SW, YW = |LW-SW|; that is, the absolute error of the theoretical rate and the actual rate;

[0092] In the specific implementation process, the temperature range corresponding to the output wavelength range is uniformly divided into multiple intervals, the reference temperature change rate is independently calculated for each interval, and a weighted average is performed according to the proportion of the actual change interval, to real-time match the theoretical temperature change rate of the current operating wavelength of the laser, and compare the actual temperature change rate of the laser with the theoretical temperature change rate, to provide a basis for subsequent adjustment of the temperature control device.

[0093] The tuning control module adjusts and controls the temperature control device of the semiconductor laser according to the temperature change difference;

[0094] The tuning control module is configured with a tuning control strategy, which includes: referring to Figure 4 As shown in the figure, the reference temperature change data is arranged in ascending order, denoted as a temperature change sequence, the minimum value and the maximum value of the temperature change sequence are obtained, denoted as WX and WD in order, and [WX, WD] is uniformly divided into k7 change subintervals, and the temperature change sequence contained in each change subinterval is counted, where k7 is the number of intervals set; k7 can be set according to the actual application scene, and in this embodiment, k7 = 5; through sorting and interval division, the distribution range of the reference temperature change rate is determined, each subinterval corresponds to a different temperature change rate range, providing a statistical basis for subsequent threshold setting;

[0095] The reference temperature change rate corresponding to the reference interval is obtained, denoted as the containing temperature change rate, the change sub-interval with the most containing temperature change rates is denoted as the reference change sub-interval, the range of the reference temperature change rate in the reference change sub-interval is obtained, denoted as the reference range CE; k8*CE is denoted as the first change threshold AY1, and k9*CE is denoted as the second change threshold AY2; wherein, k8 and k9 are set proportional coefficients, k9>k8; in this embodiment, k8=0.5, and k9=1.0;

[0096] For example, three reference temperature change rates corresponding to the reference interval are contained, two of which are in the second change sub-interval, and one is in the third change sub-interval, and the second change sub-interval is denoted as the reference change sub-interval; the reference change sub-interval represents the temperature change rate range most likely to occur in the standard state of the laser, and the CE reflects the natural fluctuation amplitude in the interval; the CE is used as a reference for threshold calculation, so that the threshold is associated with the actual fluctuation of the data distribution, and the fixed threshold is avoided to deviate from the actual working condition;

[0097] If YW<AY1, the temperature control device is not adjusted; unnecessary adjustment is avoided due to slight fluctuation, and power oscillation caused by frequent action of the control system is prevented;

[0098] If AY1≤YW<AY2, the power of the temperature control device is adjusted in a small amplitude, the fine adjustment is implemented before the error is significantly expanded, the temperature change rate is converged to the reference value, and the error accumulation is avoided;

[0099] If AY2≤YW, the power of the temperature control device is adjusted in a large amplitude; when the temperature change rate deviates from the theoretical value significantly, strong intervention can quickly pull the system back to the controllable range, and serious wavelength imbalance is avoided;

[0100] In the specific implementation process, the adjustment amplitude of the temperature control device can be set according to the actual application scene, or can be linearly adjusted in each threshold interval by means of a specific algorithm.

[0101] Embodiment 2, please refer to Figure 2 As shown in the figure, the application provides a gas real-time detection wavelength tuning control method based on TDLAS technology, including the following steps:

[0102] Step S1, collecting the working temperature data and compensation current data of the semiconductor laser in the standard working state; step S1 includes the following sub-steps:

[0103] Step S101, obtaining the output light power required by the semiconductor laser for real-time detection of the gas, denoted as the standard output light power;

[0104] Step S102, obtaining the laser wavelength range of the semiconductor laser for real-time detection of the gas output, denoted as a standard output wavelength range; and denoting any one output wavelength in the standard output wavelength range as a standard output wavelength;

[0105] Step S103, denoting the minimum output wavelength and the maximum output wavelength in the standard output wavelength range as a minimum standard wavelength EX and a maximum standard wavelength ED, respectively, and denoting the time period during which the laser wavelength output by the semiconductor laser changes from the minimum standard wavelength to the maximum standard wavelength as a standard change period;

[0106] Step S104, denoting a state in which the output wavelength of the semiconductor laser is the standard output wavelength, the output optical power is a standard output optical power, and the change period of the standard output wavelength range is the standard change period as a standard working state of the semiconductor laser;

[0107] Step S105, uniformly dividing the standard output wavelength range into k1 standard output wavelength intervals; and uniformly selecting k2 standard output wavelengths from each standard output wavelength interval, denoted as a first standard wavelength;

[0108] Step S106, under the standard working state of the semiconductor laser, sequentially collecting the working temperature and the compensation current corresponding to the first standard wavelength when the laser wavelength output by the semiconductor laser is the first standard wavelength, and recording the collection time starting from the laser wavelength output by the semiconductor laser being EX; repeating the collection multiple times to obtain working temperature data and compensation current data, respectively.

[0109] Step S2, performing reference extraction processing and temperature change extraction processing on the working temperature data and the compensation current data to obtain reference temperature change data; Step S2 includes the following sub-steps:

[0110] Step S201, denoting any one first standard wavelength as a first output wavelength, and arranging the working temperature and the compensation current size collected at different collection times for the first output wavelength in sequence according to the corresponding collection times, denoted as a working temperature sequence and a compensation current sequence, respectively;

[0111] Step S202, performing reference extraction processing on the working temperature sequence and the compensation current sequence to obtain a standard working temperature and a standard compensation current corresponding to the first output wavelength;

[0112] Step S203, repeating the obtaining of the standard working temperature and the standard compensation current corresponding to all first standard wavelengths to obtain standard temperature data and standard current data;

[0113] Step S204, reference extraction processing, Step S204 includes the following sub-steps:

[0114] Step S2041, arrange the working temperature sequence and the compensation current sequence in the order from small to large, respectively, and mark them as the first temperature sequence and the first current sequence; calculate the average value and the standard deviation of the k3th percentile to the k4th percentile of the first temperature sequence and the first current sequence, respectively, and mark them as AP1, AB1, AP2, and AB2 in order, where k3 and k4 are the set percentiles;

[0115] Step S2042, mark the data in the first temperature sequence and the first current sequence that do not belong to the corresponding normal range as abnormal data, and obtain the second temperature sequence and the second current sequence after completion; the normal range corresponding to the first temperature sequence is [AP1-k5*AB1, AP1+k5*AB1], and the normal range corresponding to the first current sequence is [AP2-k5*AB2, AP2+k5*AB2], where k5 is a set proportion coefficient;

[0116] Step S2043, for any pair of working temperature and compensation current in the same collection in the second temperature sequence and the second current sequence, mark them as the first temperature and the first current in order, respectively; if there is abnormal data in the first temperature and the first current, remove the first temperature and the first current, and repeat the processing of all data in the second temperature sequence and the second current sequence, and obtain the third temperature sequence and the third current sequence after completion;

[0117] Step S2044, normalize the third temperature sequence and the third current sequence by using the min-max normalization method according to the data type, and scale all data sizes to [0, 1]; divide [0, 1] into M small intervals uniformly, and mark them as intervals 1-M in order, respectively; combine the M small intervals into M*M interval combinations, and mark them as temperature-current combination intervals (i, j), where i and j represent interval i and interval j, respectively; where M is the number of intervals not set;

[0118] Step S2045, count the number of temperature data in the third temperature sequence and the third current sequence that are in interval i and the number of current data that are in interval j in the same collection, and mark them as the frequency number G(i, j); repeat the counting of the frequency number corresponding to all temperature-current combination intervals, and calculate the frequency probability corresponding to each frequency number according to the first formula, which is as follows: where P(i, j) represents the frequency probability;

[0119] Step S2046, accumulate all frequency probabilities in the order from large to small until the cumulative frequency probability reaches k6, and stop accumulating, where k6 is a set threshold probability; count the corresponding data in the third temperature sequence and the third current sequence of all accumulated frequency probabilities, and mark them as the fourth temperature sequence and the fourth current sequence, respectively;

[0120] In step S2047, for any data in the fourth temperature sequence and the fourth current sequence, denoted as first data, the data weight Q(v) corresponding to the first data is calculated, Q(v)=P(v) / G(v), where P(v) represents the frequency probability corresponding to the first data, and G(v) represents the frequency number corresponding to P(v);

[0121] In step S2048, the data weight corresponding to all data in the fourth temperature sequence and the fourth current sequence is repeatedly obtained, and the reference working temperature corresponding to the first output wavelength and the reference compensation current are respectively calculated according to the second formula and the third formula, the second formula is as follows: The third formula is as follows: Wherein, BT(v) represents the reference working voltage, BI(v) represents the reference compensation current, U represents the total number of data in the fourth temperature sequence or the fourth current sequence, Tv represents the vth data in the fourth temperature sequence, and Iv represents the vth data in the fourth current sequence; and the reference collection time corresponding to the reference working temperature and the reference compensation current is calculated according to the fourth formula, the fourth formula is as follows: Wherein, CR(v) represents the corresponding reference collection time, and SR(v) represents the collection time corresponding to BT(v) and BI(v).

[0122] In step S2049, the reference working temperature, the reference compensation current and the corresponding reference collection time corresponding to all first standard wavelengths are repeatedly obtained, denoted as reference temperature current data.

[0123] In step S205, the reference working temperature in the reference temperature current data is arranged in ascending order according to the size of the corresponding wavelength, denoted as the first reference temperature sequence; and the reference collection time corresponding to each reference working temperature in the first reference temperature sequence is arranged in the corresponding order, denoted as the reference time sequence; any two adjacent reference working temperatures in the first reference temperature sequence are denoted as a reference temperature interval.

[0124] In step S206, the reference temperature change rate of any reference temperature interval in the first reference temperature sequence is calculated according to the fifth formula, the fifth formula is as follows: After completion, the reference temperature change data is obtained.

[0125] In step S3, the temperature data of the semiconductor laser in actual working is collected, and the temperature change error is calculated in real time according to the reference temperature change data; step S3 includes the following substeps:

[0126] Step S301, in the process of actual operation of the semiconductor laser, the theoretical output wavelength of the semiconductor laser is acquired at a first time interval, and the actual operating temperature and the actual compensation current of the semiconductor laser are collected at the same time, and the collection time is recorded as actual operation data, wherein the first time interval is t1;

[0127] Step S302, for the current collected actual operating temperature, denoted as the first actual temperature, the last collected actual operating temperature corresponding to the first actual temperature is denoted as the second actual temperature, and the actual temperature change rate SW of the first actual temperature is calculated according to the first actual temperature, the second actual temperature and the corresponding collection time;

[0128] Step S303, the theoretical output wavelength corresponding to the first actual temperature and the second actual temperature is sequentially recorded as the first theoretical wavelength LP1 and the second theoretical wavelength LP2 respectively; the wavelength interval contained in LP1 and LP2 is recorded as the actual change interval;

[0129] Step S304, the reference temperature interval corresponding to the first standard wavelength contained in the actual change interval is acquired and recorded as the containing reference interval; the weighted average of the reference temperature change rate corresponding to the containing reference interval is calculated according to the proportion of the first standard wavelength corresponding to the containing reference interval in the actual change interval, to obtain the theoretical temperature change rate LW of the first actual temperature;

[0130] Step S305, the temperature change error YW is calculated according to the theoretical temperature change rate LW and the actual temperature change rate SW, YW = |LW-SW|.

[0131] Step S4, the temperature control device of the semiconductor laser is adjusted and controlled according to the temperature change error; step S4 includes the following substeps:

[0132] Step S401, the reference temperature change data is arranged in ascending order and recorded as a temperature change sequence, the minimum value and the maximum value of the temperature change sequence are acquired and recorded as WX and WD respectively, and [WX, WD] is evenly divided into k7 change subintervals, and the temperature change sequence contained in each change subinterval is counted, wherein k7 is the number of intervals set;

[0133] Step S402, the reference temperature change rate corresponding to the containing reference interval of the actual change interval is acquired and recorded as the containing temperature change rate, the change subinterval containing the most containing temperature change rates is recorded as the reference change subinterval, and the range of the reference temperature change rate in the reference change subinterval is acquired and recorded as the reference range CE;

[0134] Step S403, k8*CE is recorded as the first change threshold AY1, and k9*CE is recorded as the second change threshold AY2; wherein k8 and k9 are set proportional coefficients, and k9>k8;

[0135] Step S404, if YW<AY1, the temperature control device is not adjusted; if AY1≤YW<AY2, the power of the temperature control device is adjusted in a small range, and if AY2≤YW, the power of the temperature control device is adjusted in a large range.

[0136] Embodiment 3, please refer to Figure 5 , Figure 5 An electronic device is exemplified, which can include a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory complete mutual communication through the communication bus. The memory stores computer readable instructions, and the processor can call the instructions in the memory, and when the computer readable instructions are executed by the processor, the steps in the gas real-time detection wavelength tuning control method based on TDLAS technology are run to realize the following functions: collecting working temperature data and compensation current data of a semiconductor laser in a standard working state; performing reference extraction processing on the working temperature data and the compensation current data, and performing temperature change extraction processing to obtain reference temperature change data; collecting temperature data of the semiconductor laser in actual working, and calculating a temperature change error in real time according to the reference temperature change data; and adjusting and controlling a temperature control device of the semiconductor laser according to the temperature change error.

[0137] In addition, the logical instructions in the memory described above can be implemented in the form of a software functional unit and sold or used as an independent product, and can be stored in a computer readable storage medium. Based on such understanding, the technical solutions of the present application essentially or the part that contributes to the prior art or part of the technical solutions can be embodied in the form of a software product, and the computer software product is stored in a storage medium, including a plurality of instructions to make a computer device (which can be a personal computer, a server, or a network device, etc.) execute all or part of the steps of the method described in various embodiments of the present application. The foregoing storage medium includes: a U disk, a mobile hard disk, a read-only memory (ROM, Read-Only Memory), a random access memory (RAM, Random Access Memory), a magnetic disk or an optical disk, and various media that can store program codes.

[0138] Embodiment 4, the application also provides a computer readable storage medium, and the application provides a storage medium, which stores a computer program, and the computer program is executed by a processor to run the steps of the above gas real-time detection wavelength tuning control method based on the TDLAS technology to realize the following functions: collecting working temperature data and compensation current data of the semiconductor laser in a standard working state; performing reference extraction processing on the working temperature data and the compensation current data, and performing temperature change extraction processing to obtain reference temperature change data; collecting temperature data of the semiconductor laser in actual working, and calculating a temperature change error in real time according to the reference temperature change data; and adjusting and controlling a temperature control device of the semiconductor laser according to the temperature change error.

[0139] Through the description of the above embodiments, the embodiments of the application can be provided as a method, a system or a computer program product. Based on such understanding, the above technical solutions can be embodied in the form of a software product, which can be stored in a computer readable storage medium, such as a ROM / RAM, a magnetic disk, an optical disk, etc., and includes a plurality of instructions to make a computer device (which can be a personal computer, a server, or a network device, etc.) execute the method described in each embodiment or some parts of the embodiment.

[0140] In the embodiments provided by the present application, it should be understood that the disclosed system or method can be implemented in other ways. The embodiments described above are only illustrative, for example, the division of the modules or units is only a logical function division, and there can be another division manner in actual implementation, for example, a plurality of modules or units can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the coupling or direct coupling or communication connection between the shown or discussed elements can be through some communication interfaces, indirect coupling or communication connection between systems, modules and units can be electrical, mechanical or other forms.

[0141] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, but not limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement to some technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A wavelength tuning control system for real-time detection of gas based on TDLAS technology, characterized in that, The standard acquisition module is configured with a standard acquisition strategy, and the standard acquisition strategy comprises: acquiring output optical power required by the semiconductor laser for real-time detection of a gas, denoted as standard output optical power; acquiring a laser wavelength range output by the semiconductor laser for real-time detection of a gas, denoted as a standard output wavelength range; denoting any one output wavelength in the standard output wavelength range as a standard output wavelength; denoting the minimum output wavelength and the maximum output wavelength in the standard output wavelength range as a minimum standard wavelength EX and a maximum standard wavelength ED, respectively; and denoting a time period experienced by the laser wavelength output by the semiconductor laser from the minimum standard wavelength to the maximum standard wavelength as a standard change period; denoting a state in which the output wavelength of the semiconductor laser is the standard output wavelength, the output optical power is the standard output optical power, and the change period of the standard output wavelength range is the standard change period as a standard working state of the semiconductor laser; the standard acquisition strategy further comprises: uniformly dividing the standard output wavelength range into k1 standard output wavelength intervals; and uniformly selecting k2 standard output wavelengths from each standard output wavelength interval, denoted as first standard wavelengths; causing the semiconductor laser to, in the standard working state, sequentially acquire working temperatures and compensation current magnitudes corresponding to the first standard wavelengths output by the semiconductor laser, and starting to record acquisition time when the laser wavelength output by the semiconductor laser is EX; repeating the acquisition multiple times to obtain working temperature data and compensation current data, respectively; the first processing unit is configured with a first processing strategy, and the first processing strategy comprises: for any one first standard wavelength, denoted as a first output wavelength, arranging, in sequence, working temperatures and compensation current magnitudes acquired at different acquisition times for the first output wavelength according to the corresponding acquisition times, denoted as a working temperature sequence and a compensation current sequence, respectively; and performing reference extraction processing on the working temperature sequence and the compensation current sequence to obtain a standard working temperature and a standard compensation current corresponding to the first output wavelength; repeating the acquisition of the standard working temperature and the standard compensation current corresponding to all the first standard wavelengths to obtain standard temperature data and standard current data; and the reference extraction module comprises a first processing unit and a second processing unit, the first processing unit is configured with a first processing strategy, and the first processing strategy comprises: for any one first standard wavelength, denoted as a first output wavelength, arranging, in sequence, working temperatures and compensation current magnitudes acquired at different acquisition times for the first output wavelength according to the corresponding acquisition times, denoted as a working temperature sequence and a compensation current sequence, respectively; and performing reference extraction processing on the working temperature sequence and the compensation current sequence to obtain a standard working temperature and a standard compensation current corresponding to the first output wavelength; repeating the acquisition of the standard working temperature and the standard compensation current corresponding to all the first standard wavelengths to obtain standard temperature data and standard current data; and the reference extraction module comprises a first processing unit and a second processing unit, the first processing unit is configured with a first processing strategy, and the first processing strategy comprises: for any one first standard wavelength, denoted as a first output wavelength, arranging, in sequence, working temperatures and compensation current magnitudes acquired at different acquisition times for the first output wavelength according to the corresponding acquisition times, denoted as a working temperature sequence and a compensation current sequence, respectively; and performing reference extraction processing on the working temperature sequence and the compensation current sequence to obtain a standard working temperature and a standard compensation current corresponding to the first output wavelength; repeating the acquisition of the standard working temperature and the standard compensation current corresponding to all the first standard wavelengths to obtain standard temperature data and standard current data; and the reference extraction module comprises a first processing unit and a second processing unit, the first processing unit is configured with a first processing strategy, and the first processing strategy comprises: for any one first standard wavelength, denoted as a first output wavelength, arranging, in sequence, working temperatures and compensation current magnitudes acquired at different acquisition times for the first output wavelength according to the corresponding acquisition times, denoted as a working temperature sequence and a compensation current sequence, respectively; and performing reference extraction processing on the working temperature sequence and the compensation current sequence to obtain a standard working temperature and a standard compensation current corresponding to the first output wavelength; repeating the acquisition of the standard working temperature and the standard compensation current corresponding to all the first standard wavelengths to obtain standard temperature data and standard current data; and The reference extraction processing includes: arranging the working temperature sequence and the compensation current sequence in ascending order, respectively, and recording as a first temperature sequence and a first current sequence; calculating the average value and the standard deviation of the k3th percentile to the k4th percentile of the first temperature sequence and the first current sequence, respectively, and recording in order as AP1, AB1, AP2, and AB2, wherein k3 and k4 are set percentiles; And respectively marking the data in the first temperature sequence and the first current sequence that does not belong to the corresponding normal range as abnormal data, and obtaining a second temperature sequence and a second current sequence after completion; wherein the normal range corresponding to the first temperature sequence is [AP1-k5*AB1, AP1+k5*AB1], and the normal range corresponding to the first current sequence is [AP2-k5*AB2, AP2+k5*AB2], wherein k5 is a set proportion coefficient; For any pair of working temperature and compensation current in the same collection in the second temperature sequence and the second current sequence, recording in order as a first temperature and a first current, if there is abnormal data in the first temperature and the first current, the first temperature and the first current are removed, and the processing of all data in the second temperature sequence and the second current sequence is repeated, and the third temperature sequence and the third current sequence are obtained after completion; The reference extraction processing further includes: The third temperature sequence and the third current sequence are normalized by using the min-max normalization method according to the data type, and the size of all data is scaled to [0, 1]; Divide [0, 1] into M small intervals uniformly, and record in order as interval 1-M; combine the M small intervals into M*M interval combinations, and record as temperature current combination interval (i, j), wherein i and j represent interval i and interval j respectively; wherein M is not set interval number; Statistically count the number of corresponding temperature data in interval i and corresponding current data in interval j in the same collection in the third temperature sequence and the third current sequence, and record as frequency number G(i, j); The frequency number corresponding to each temperature current combination interval is counted repeatedly, and the frequency probability corresponding to each frequency number is calculated according to a first formula, and the first formula is as follows: wherein P(i,j) represents the frequency probability; Cumulatively add all frequency probabilities in descending order until the cumulative frequency probability reaches k6, then stop adding, wherein k6 is a set threshold probability; count all cumulative frequency probabilities corresponding to the data in the third temperature sequence and the third current sequence, and record as a fourth temperature sequence and a fourth current sequence; For any one data in the fourth temperature sequence and the fourth current sequence, record as a first data, calculate the data weight Q(v) corresponding to the first data, Q(v)=P(v) / G(v), wherein P(v) represents the frequency probability corresponding to the first data, and G(v) represents the frequency number corresponding to P(v); The data weight corresponding to all data pairs in the fourth temperature sequence and the fourth current sequence is repeatedly obtained, and the reference operating temperature corresponding to the first output wavelength and the reference compensation current are respectively calculated according to the second formula and the third formula, the second formula is as follows: , the third formula is as follows: , wherein BT(v) represents the reference operating voltage, BI(v) represents the reference compensation current, U represents the total number of data in the fourth temperature sequence or the fourth current sequence, T(v) represents the vth data in the fourth temperature sequence, and I(v) represents the vth data in the fourth current sequence; and the reference acquisition time corresponding to the reference operating temperature and the reference compensation current is calculated according to the fourth formula, the fourth formula is as follows: , wherein CR(v) represents the corresponding reference acquisition time, and SR(v) represents the acquisition time corresponding to BT(v) and BI(v). Repeat the acquisition of the reference working temperature, the reference compensation current, and the corresponding reference collection time corresponding to all first standard wavelengths, and record as reference temperature current data; The second processing unit is configured with a second processing strategy, and the second processing strategy includes: Arranging reference working temperatures in the reference temperature current data in ascending order of the corresponding wavelength size, and recording as a first reference temperature sequence; and arranging the reference collection time corresponding to each reference working temperature in the first reference temperature sequence in the corresponding order, and recording as a reference time sequence; and recording any two adjacent reference working temperatures in the first reference temperature sequence as a reference temperature interval; The reference temperature change rate of any one reference temperature interval in the first reference temperature sequence is calculated according to a fifth formula; the fifth formula is as follows: , and the reference temperature change data is obtained after completion; The data acquisition module is configured with a data acquisition strategy, and the data acquisition strategy comprises: In the actual working process of the semiconductor laser, the theoretical output wavelength of the semiconductor laser is acquired at a first time interval, and the actual working temperature and the actual compensation current size of the semiconductor laser are collected at the same time, and the collection time is recorded, and is recorded as actual working data, wherein the first time interval is t1; For the currently collected actual working temperature, record as the first actual temperature, record the last collected actual working temperature corresponding to the first actual temperature as the second actual temperature, and calculate the actual temperature change rate SW of the first actual temperature according to the first actual temperature, the second actual temperature and the corresponding collection time; The theoretical output wavelength corresponding to the first actual temperature and the second actual temperature is recorded in order as the first theoretical wavelength LP1 and the second theoretical wavelength LP2 respectively; and the wavelength interval contained by LP1 and LP2 is recorded as an actual change interval; The data acquisition strategy further comprises: The reference temperature interval corresponding to the first standard wavelength contained in the actual change interval is acquired, and is recorded as a containing reference interval; the reference temperature change rate corresponding to the containing reference interval is weightedly averaged according to the proportion of the first standard wavelength corresponding to the containing reference interval in the actual change interval, to obtain the theoretical temperature change rate LW of the first actual temperature; The temperature change error YW is calculated according to the theoretical temperature change rate LW and the actual temperature change rate SW, YW=|LW-SW|; The tuning control module is configured with a tuning control strategy, and the tuning control strategy comprises: Arranging the reference temperature change data in ascending order, recording as a temperature change sequence, acquiring the minimum value and the maximum value of the temperature change sequence, recording as WX and WD in order, dividing [WX, WD] into k7 change subintervals uniformly, and counting the temperature change sequence contained in each change subinterval, wherein k7 is the number of intervals set; The reference temperature change rate corresponding to the containing reference interval of the actual change interval is acquired, and is recorded as a containing temperature change rate, the change subinterval containing the most containing temperature change rates is recorded as a reference change subinterval, and the range of the reference temperature change rate in the reference change subinterval is acquired, and is recorded as a reference range CE; k8*CE is recorded as a first change threshold AY1, and k9*CE is recorded as a second change threshold AY2; wherein k8 and k9 are proportion coefficients set, k9>k8; If YW<AY1, the temperature control device is not adjusted; if AY1≤YW<AY2, the power of the temperature control device is adjusted in a small amplitude, and if AY2≤YW, the power of the temperature control device is adjusted in a large amplitude.

2. The wavelength tuning control method for gas real-time detection based on TDLAS technology according to claim 1, wherein the wavelength tuning control system for gas real-time detection based on TDLAS technology is implemented, and the wavelength tuning control system for gas real-time detection based on TDLAS technology is characterized in that, The steps comprise: Collecting the working temperature data and compensation current data corresponding to the semiconductor laser in the standard working state; Reference extraction processing is performed on the working temperature data and compensation current data, and temperature change extraction processing is performed to obtain reference temperature change data; Temperature data of the semiconductor laser in actual working is collected, and temperature change error is calculated in real time according to the reference temperature change data; The temperature control device of the semiconductor laser is adjusted and controlled according to the temperature change error.

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