Crystal ingot thickness measuring device and control method thereof

Abstract

The embodiment of the invention provides a crystal ingot thickness measuring device and a control method thereof, and relates to the technical field of semiconductor material manufacturing, a crystal ingot thickness measuring mechanism obtains the height amount of the upper surface of a crystal ingot and the height amount of the surface of a crystal ingot adsorption table through a first detector and a second detector, obtains the thickness of the crystal ingot to be detected, and carries out error compensation. The crystal ingot thickness measurement control method can realize switching measurement of crystal ingots with different sizes. According to the embodiment of the invention, the overall structure is relatively simple, low-cost crystal ingot thickness measurement is realized by using a compact structure and a modular design idea, the method can be applied to various different crystal ingot thickness measurement devices, the application prospect is wide, automatic switching can be realized in the thickness measurement process of crystal ingots with different thickness sizes, and the measurement accuracy is improved. The problems that in the prior art, due to frequent disassembly and installation of crystal ingots with different sizes and thicknesses, the measurement precision is reduced, operation is tedious, and the construction period is prolonged are solved.

Description

TECHNICAL FIELD

[0001] The embodiment of the present application relates to the technical field of semiconductor material manufacturing, and in particular to a crystal ingot thickness measuring device and a control method thereof. BACKGROUND

[0002] In the field of semiconductor material manufacturing, the thickness detection of a crystal ingot is a key link to ensure product quality and safety. With the continuous development of semiconductor technology, the detection accuracy of the thickness of the crystal ingot is increasingly required. However, the traditional crystal ingot thickness measurement method has many limitations and defects. At present, the thickness of a silicon carbide crystal ingot is usually measured by a marble dial gauge, and manual operation is required to set different thinning parameters for crystal ingots of different sizes and thicknesses, which results in the inability to work continuously online and low measurement efficiency. In addition, according to the disclosure of the Chinese utility model patent with the publication number CN212779161U, the method for measuring the thickness of a crystal ingot non-contact has the characteristics of high efficiency and convenient use, but is easily affected by the working environment (such as temperature and humidity), and is also affected by the surface morphology and roughness of the material, and the measurement accuracy is limited. The existing technology often requires manual operation to replace the 8-inch and 12-inch crystal ingot measuring devices for measuring the thickness of crystal ingots of different sizes, and the disassembly and installation process easily leads to reduced measurement accuracy and complicated operation. With the promotion of Industry 4.0 and intelligent manufacturing, the intelligentization of detection devices is increasingly required. However, the existing crystal ingot thickness detection system still cannot realize high-precision automatic calibration, remote monitoring, and secondary high-precision grinding of the crystal ingot.

[0003] Therefore, it is urgent to develop a high-precision, fully automated, online measuring modular device to improve measurement accuracy and work efficiency, and the modular design facilitates application in a device for measuring the thickness of a crystal ingot after grinding and thinning (such as a thinning machine). The existing technology has not provided an effective technical solution, and has been unable to meet the needs of automatic preparation of semiconductor materials, and needs to be improved. SUMMARY

[0004] The main purpose of the embodiment of the present application is to provide a crystal ingot thickness measuring device and a control method thereof to solve the technical problems that automatic calibration, precision compensation, and automatic switching of crystal ingots of different sizes cannot be realized in the prior art.

[0005] The embodiment of the present application adopts the following technical solutions:

[0006] According to an aspect of the embodiments of the present application, a crystal ingot thickness detection device is provided, comprising: a first detector 1 arranged above a crystal ingot suction table and vertically movable relative to the crystal ingot suction table, the first detector 1 being configured to detect a first height, the first height being a height of an upper surface of the crystal ingot; and a second detector 2 arranged at an edge of the crystal ingot suction table and vertically and horizontally movable relative to the crystal ingot suction table, the second detector 2 being configured to detect a second height, the second height being a height of a surface of the crystal ingot suction table; and a thickness of a crystal ingot to be detected is obtained according to a difference between the second height and the first height, and the second detector 2 is vertically and horizontally movable to switch between different sizes of crystal ingots during detection of the thickness of the crystal ingot.

[0007] According to at least one specific embodiment of the present application, the first detector 1 further comprises: a crystal ingot suction table 3 configured to place a crystal ingot to be detected; a first probe head connecting member 12 having one end connected to a first probe head connecting rod 13 and the other end fixedly connected to a fixed pillar 6 vertically movable relative to the crystal ingot suction table; the first probe head connecting rod 13 having one end connected to the first probe head connecting member 12 and the other end connected to a first probe head 131; and the first probe head 131 having a first detection end close to the crystal ingot suction table 3 and a mounting end away from the crystal ingot suction table, and the first height is obtained when the first detection end abuts against an upper surface of the crystal ingot.

[0008] According to at least one specific embodiment of the present application, the first probe head connecting member 12 of the first detector 1 is provided with at least three first probe head connecting rods 13, and the three first probe head connecting rods are arranged radially above the crystal ingot suction table; the crystal ingot suction table 3 is a vacuum suction ceramic table compatible with 8-inch and 12-inch crystal ingots, and the crystal ingot suction table 3 is slidably mounted on a sliding platform 31; the second detector 2 is mounted on a rotating and lifting platform 23 through a fixed connecting member 22, the rotating and lifting platform 23 is connected to an output end of a second rotating servo motor 24, a second lifting servo motor 25 is arranged below the second rotating servo motor 24, an output end of the second lifting servo motor 25 is connected to a second lead screw 27 through a second coupling 26, the second lead screw 27 is sleeved with a second sliding block 28, the second sliding block 28 is connected to a lower edge of a sliding block connecting member 29, an upper edge of the sliding block connecting member 29 is fixedly connected to the second rotating servo motor 24; a second probe head connecting rod 21 is mounted on the second detector 2, a second probe head 211 is mounted on one end of the second probe head connecting rod 21 close to the crystal ingot suction table 3, and a second detection end of the second probe head 211 close to the crystal ingot is configured to obtain the second height when the second detection end abuts against a surface of the crystal ingot suction table.

[0009] According to at least one of the embodiments of the present application, the crossbeam 4 is used to mount the first detector 1 and the second detector 2, the crossbeam 4 is connected with the fixing frame 8 through a crossbeam connecting plate 41, a positioning pin 42 is arranged on the crossbeam 4, pin holes corresponding to the positioning pin 42 are arranged on the crossbeam connecting plate 41 and the fixing frame 8, and the fixing frame 8 is fixed to the crossbeam through the pin holes by the positioning pin 42; the fixing base 5 is mounted on the lower edge of the crossbeam 4 and is used to fix the crystal ingot thickness detection device on a plane; the fixing column 6 is used to drive the first detector 1 to move synchronously in the vertical direction; the photoelectric sensor assembly is used to detect whether the second detector 2 reaches the initial reference height on the crystal ingot suction table; the photoelectric sensor assembly is mounted on one side of the second detector 2, and the photoelectric sensor assembly includes a photoelectric sensor 45 and a light shielding sheet 46, the light shielding sheet 46 moves synchronously with the second detector 2, and the photoelectric sensor 45 detects whether the second detector 2 reaches the initial reference height on the crystal ingot suction table 3 by shielding or reflecting light in the process of synchronous movement; the first lifting servo motor 7 is used to provide lifting power output for the first detector 1; the fixing frame 8 is provided with the first sliding block 9 in the fixing frame 8, the first sliding block 9 is fixedly connected with the fixing column 6 and the first lead screw 10, and the other end of the first lead screw 10 is connected with the output shaft of the first lifting servo motor 7 through the first coupling 71.

[0010] According to at least one of the embodiments of the present application, a boss 11 is arranged on the first detector 1, and the boss 11 is connected with the first probe head connecting piece 12 through a damping and buffering structure.

[0011] According to at least one of the embodiments of the present application, the damping and buffering structure includes a damping rod 15 connected with the first probe head connecting piece 12, one end of the damping rod 15 is a threaded end 150, the other end is a bottom end 156, a sliding part 157 is arranged between the bottom end 156 and the threaded end 150, and a spring 14 is sleeved on the outer periphery of the sliding part 157.

[0012] According to at least one of the embodiments of the present application, the damping and buffering structure includes a buffer 153 and a piston 154, a first threaded rod 152 is connected with the upper edge of the buffer 153, the first threaded rod 152 is used to be screwed with a first nut 151, the buffer 153 has a containing cavity 1531, the upper edge of the piston 154 is provided with a piston rod 1541, the lower edge of the piston 154 is provided with a second threaded rod 1542, the piston rod 1541 is used to extend into the containing cavity 1531, and the second threaded rod 1542 is used to be screwed with a second nut 155.

[0013] According to at least one specific embodiment of the present application, the first probe head connector 12 is provided with a connecting rod 124 near one side of the fixed support column 6, the connecting rod 124 extends into the connecting rod cavity 64 of the fixed support column 6, and the connecting rod 124 is provided with an armature 123 at an end away from the first probe head connector 12, the armature 123 extends into an inductor coil 66.

[0014] According to at least one specific embodiment of the present application, a fulcrum shaft 65 is arranged in the connecting rod cavity 64, one end of the fulcrum shaft 65 is rotatably connected with the connecting rod 124, and the other end of the fulcrum shaft 65 is fixedly connected with the inner wall of the connecting rod cavity 64.

[0015] According to still another aspect of the present application, a crystal ingot thickness measurement control method is provided, the crystal ingot thickness is detected based on the crystal ingot thickness detection device, and the method comprises the following steps: controlling the first lifting servo motor 7 to output power, so that the first detector 1 detects the crystal ingot through the first probe head 131, if the first probe head 131 abuts against the upper surface of the crystal ingot, the first lifting servo motor 7 is stopped to output power, and the first height L1 is obtained; the second lifting servo motor 25 and the second rotating servo motor 24 are controlled to output power, so that the second probe head 211 of the second detector 2 reaches the upper surface of the crystal ingot suction table 3, the second height L2 is obtained, and the second height L2 is the initial reference height of the crystal ingot thickness measurement; and the current thickness of the crystal ingot is obtained according to the height difference between the first height L1 and the second height L2.

[0016] According to at least one specific embodiment of the present application, when the first lifting servo motor 7 is controlled to make the first detector 1 detect the crystal ingot through the first probe head 131, the output shaft of the first lifting servo motor 7 outputs power to the first coupling 71, drives the first lead screw 10 and the first sliding block 9 to make linear motion perpendicular to the crystal ingot suction table, and synchronously drives the fixed support column 6 to move the first detector 1; the actual moving distance of the first detector 1 is obtained by obtaining the displacement of the measuring sliding head 62 in the grating ruler sensor 61; and the actual moving distance of the first detector 1 is compared with the preset crystal ingot thinning thickness, if there is a difference, the current crystal ingot is re-polished.

[0017] According to still another aspect of the embodiment of the present application, a crystal ingot thickness measurement control method is provided, which is applied to automatic switching of crystal ingots of different sizes in a thickness detection process: the second lifting servo motor 25 is controlled to output power to the second coupling 26 and the second lead screw 27, so that the second sliding block 28 sleeved on the outer periphery of the second lead screw 27 moves upward, the second sliding block 28 drives the sliding block connecting piece 29 and the second detector 2 to move upward synchronously, so that the second probe head 211 of the second detector 2 is separated from the current initial reference position; the second rotary servo motor 24 is controlled to output power to drive the rotary lifting platform 23 and the second detector 2 to rotate synchronously until the position of the second detector 2 is above the crystal ingot adsorption table; the second lifting servo motor 25 is controlled to output power to the second coupling 26 and the second lead screw 27, so that the second sliding block 28 sleeved on the outer periphery of the second lead screw 27 moves downward, the second sliding block 28 drives the sliding block connecting piece 29 and the second detector 2 to move downward synchronously; the downward movement of the second detector 2 is detected by the photoelectric sensor assembly, and when the second detector 2 is lowered to the initial reference position required for crystal ingot thickness measurement, the second lifting servo motor 25 is controlled to stop outputting power, so that the second probe head 211 of the second detector 2 enters the new initial reference position.

[0018] The embodiment of the present application has the beneficial technical effects that:

[0019] The crystal ingot thickness detection device provided by the embodiment of the present application detects the thickness of the crystal ingot on the crystal ingot adsorption table through the first and second detectors, and the thickness of the crystal ingot can be obtained by detecting the first height of the upper surface of the crystal ingot and the second height of the surface of the crystal ingot adsorption table and calculating the height difference between the two heights. The overall structure is relatively simple, the first and second detectors are cooperatively matched, a low-cost crystal ingot thickness measurement is realized by using a compact structure and a modular design idea, the crystal ingot thickness detection device can be applied to a single-axis thinning machine and a double-axis thinning machine, and has a wide application prospect.

[0020] The crystal ingot thickness detection device and the crystal ingot thickness detection control method can compensate for the error of the first detector through the grating ruler sensor, so as to obtain a high-precision crystal ingot thinning effect. When there is a difference between the actual moving distance of the first detector and the pre-set crystal ingot thinning thickness, the grinding and thinning process of the crystal ingot is restarted for secondary grinding, and error compensation is realized.

[0021] The embodiment of the present application can realize automatic switching in the process of measuring the thickness of crystal ingots of different sizes and different thicknesses, and can avoid the problems of reduced measurement accuracy and prolonged operation period caused by frequent disassembly and installation of crystal ingots of different sizes and thicknesses in the prior art. BRIEF DESCRIPTION OF DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the specific embodiments of the present application or the technical solutions in the related art, the following will briefly introduce the drawings needed to be used in the specific embodiments or the related art description. Obviously, the drawings in the following description only show some embodiments of the present application, and for those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0023] Figure 1 is a schematic diagram of the present application in a specific application scenario.

[0024] Figure 2 is a structural diagram of a crystal ingot thickness detection device.

[0025] Figure 2-I is a partial enlarged view of Figure 2

[0026] Figure 3 is a structural diagram of a crystal ingot thickness detection device.

[0027] Figure 4 is a perspective view of Figure 3

[0028] Figure 5 is a structural diagram of a first and second detector.

[0029] Figure 6 is an exploded view of a first and second detector.

[0030] Figure 7 is a structural diagram of a first and second detector and adjacent components.

[0031] Figure 8 is a structural diagram of a first and second detector and adjacent components.

[0032] Figure 9 is an exploded view of a first and second detector and adjacent components.

[0033] Figure 10 is a structural diagram of a shock absorbing rod in some embodiments.

[0034] Figure 11 is a structural diagram of a shock absorbing and buffering structure in other embodiments.

[0035] Figure 12 is a structural diagram of a shock absorbing and buffering structure in other embodiments.

[0036] Figure 13 is a perspective view of a shock absorbing and buffering structure in other embodiments.

[0037] Figure 14 ​​is a side view of a shock absorbing cushion structure in some embodiments.

[0038] Figure 15 is an exploded view of a probe contact detection mechanism in a shock absorbing cushion structure.

[0039] Figure 16 is a sectional view of a probe contact detection mechanism in a shock absorbing cushion structure.

[0040] Figure 17 is one of exploded views of a first and second detector and adjacent components.

[0041] Figure 18 is another of exploded views of a first and second detector and adjacent components.

[0042] Figure 19 is a third configuration view of a crystal ingot thickness detection device.

[0043] Figure 20 is a fourth configuration view of a crystal ingot thickness detection device.

[0044] Figure 21 is an exploded view of a crystal ingot thickness detection device.

[0045] Figure 22 is a configuration view of a photosensor assembly.

[0046] Figure 23 is a flowchart of a crystal ingot thickness measurement control method provided by steps S101 to S103.

[0047] Figure 24 is a flowchart of a crystal ingot thickness measurement control method provided by steps T101 to T104.

[0048] BRIEF DESCRIPTION OF DRAWINGS

[0049] First detector 1, first probe head connecting piece 12, first probe head connecting rod 13, long slot type hole 121, sliding hole 122, armature 123, connecting branch 124, second detector 2, second probe head connecting rod 21, fixed connecting piece 22, rotary lifting platform 23, second probe head 211, crystal ingot adsorption table 3, sliding platform 31, crossbeam 4, crossbeam connecting plate 41, positioning pin 42, pin hole 43, fixed seat 44, photoelectric sensor 45, light barrier 46, fixed base 5, fixed support 6, grating ruler sensor 61, measuring sliding head 62, cable connection port 63, connecting rod cavity 64, fulcrum shaft 65, inductance coil 66, first lifting servo motor 7, first coupling 71, fixed frame 8, first sliding block 9, first lead screw 10, boss 11, first probe head connecting rod 13, first probe head 131, fixed mounting hole 132, spring 14, shock absorbing rod 15, threaded end 150, first nut 151, first threaded rod 152, buffer 153, containing cavity 1531, piston 154, piston rod 1541, second threaded rod 1542, second nut 155, bottom end 156, sliding part 157, fixed nut 16, second rotary servo motor 24, second lifting servo motor 25, connecting fastener 251, second coupling 26, second lead screw 27, second sliding block 28, connecting end 281, sliding block connecting piece 29, guide rod 291, first height L1, second height L2. DETAILED DESCRIPTION

[0050] In order to enable persons skilled in the art to better understand the embodiments of the present application, the technical solutions in the embodiments of the present application will be described clearly and completely in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the embodiments of the present application, all other embodiments obtained by persons of ordinary skill in the art without creative labor should fall within the scope of protection of the embodiments of the present application.

[0051] In the embodiments of the present application, the terms "upper", "lower", "left", "right", "front", "back", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal" and the like indicate the orientation or positional relationship shown in the drawings. These terms are mainly used to better describe the embodiments of the present application and its implementation, and are not used to limit the indicated devices, elements or components must have a specific orientation, or be constructed and operated in a specific orientation.

[0052] Furthermore, in addition to indicating location or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in the embodiments of this application based on the specific circumstances.

[0053] Furthermore, the terms "installation," "setup," "equipped with," "connection," "linking," and "socketing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this application according to the specific circumstances.

[0054] like Figure 1 As shown, Figure 1 This is the main application scenario of the embodiments of this application. The main application scenario includes a valve box, an online fully automatic thickness detection mechanism, a grinding ceramic table, a ceramic table moving mechanism, a feeding mechanism, a rear electrical box, and a measuring electrical box. The valve box's main function is to control the pneumatic or hydraulic system to achieve precise control of other components. The ingot thickness measuring device and its control method are responsible for automatically measuring the thickness of the ingot. The grinding ceramic table is a platform for placing the ingot and is made of wear-resistant and flat ceramic material. The ceramic table moving mechanism is responsible for moving the grinding ceramic table so that the ingot on it can be accurately measured by the online fully automatic thickness detection mechanism. The moving mechanism is responsible for feeding the ingot into the online fully automatic thickness detection mechanism, the grinding spindle feeding mechanism, and sending the ingot out after thickness detection, ensuring that the ingot remains in the correct position throughout the thickness detection process. The grinding spindle feeding mechanism needs precise control to ensure the required grinding thickness of the ingot during the grinding and thinning process. The feeding mechanism is responsible for delivering the ingot into the online fully automated thickness detection mechanism and, after the thickness detection is completed, for delivering the ingot out. The feeding mechanism works in conjunction with the ceramic stage moving mechanism to ensure that the ingot remains in the correct position throughout the thickness detection process. The rear electrical box and the measuring electrical box contain control electronics responsible for the electrical control and signal processing of the entire system.

[0055] In the main application scenarios of this application embodiment, the workflow can be summarized as follows:

[0056] Ingot placement: The ingot is placed on the grinding ceramic table.

[0057] Mobile positioning: The ceramic table moving mechanism moves the ingot below the online fully automatic thickness detection mechanism.

[0058] Thickness measurement: The online fully automated thickness inspection mechanism measures the thickness of the crystal ingot.

[0059] Data processing: The measurement data is sent to the control system in the electrical box for processing and analysis.

[0060] Results output: Measurement results can be used for quality control, process optimization, or further processing guidance.

[0061] Ingot removal: After the measurement is completed, the feeding mechanism removes the ingot from the measurement area, ready for the next step of processing.

[0062] The fully automated ingot thickness measurement mechanism provided for main application scenarios integrates multiple precision components to achieve high-precision and high-efficiency measurement of ingot thickness, resulting in a significant improvement in production efficiency and product quality.

[0063] like Figures 2 to 4 The main structure of the crystal ingot thickness measuring device shown includes: a crystal ingot adsorption stage 3 for placing the crystal ingot to be tested, and a first detector 1 disposed above the crystal ingot adsorption stage 3. The first detector 1 can be vertically raised and lowered relative to the crystal ingot adsorption stage 3, detecting a first height during the vertical raising and lowering process. The obtained first height can be used to represent the height of the upper surface of the crystal ingot (not shown in the figure). A second detector 2 is disposed at the edge of the crystal ingot adsorption stage 3. The second detector 2 can be vertically raised and lowered and horizontally rotated relative to the crystal ingot adsorption stage 3. By controlling the vertical raising and lowering and horizontal rotation of the second detector 2, a second height can be detected, which is the height of the surface of the crystal ingot adsorption stage 3. Figure 2-I As shown in the schematic diagram of the ingot thickness measurement principle in Part I, after obtaining the first height L1 and the second height L2, the thickness L of the ingot to be tested can be obtained based on the difference between the first height L1 and the second height L2. During the ingot thickness measurement process, the vertical lifting and horizontal rotation of the second measuring instrument 2 can be used to switch between ingots of different sizes, realizing an online and continuous ingot thinning and thickness measurement process.

[0064] like Figures 5 to 9As shown, as preferred, the first detector 1 comprises: a boss 11, a first probe head connecting piece 12, a long slot type hole 121, a first probe head connecting rod 13, a first probe head 131, a fixed mounting hole 132, a spring 14, a screw 15, and a fixed nut 16. One end of the first probe head connecting piece 12 is connected to the first probe head connecting rod 13, and the other end of the first probe head connecting piece 12 is fixedly connected to a fixed support 6, which can vertically ascend and descend relative to the crystal ingot adsorption table 3. The fixed support 6 synchronously drives the first probe head connecting piece 12, the first probe head connecting rod 13, and the first probe head 131 to move in the vertical direction through its own movement. One end of the first probe head connecting rod 13 is connected to the first probe head connecting piece 12, and the other end is connected to the first probe head 131. The first probe head 131 has a first probe end near the crystal ingot adsorption table 3 and a mounting end away from the crystal ingot adsorption table 3. The first probe end is needle-shaped and is used to accurately abut the upper surface of the crystal ingot. When the first probe end abuts the upper surface of the crystal ingot, the first height L1 is obtained. The mounting end is nut-shaped and facilitates the installation of the first probe head 131 on the first probe head connecting rod 13.

[0065] As shown in Figures 10 to 16 In order to prevent the first probe head 131 from vibrating when the first probe end abuts the upper surface of the crystal ingot, causing damage to the first probe head connecting rod 13 or the upper surface of the crystal ingot, and to avoid measurement errors, a shock-absorbing and buffering structure is adopted between the fixed support 6 and the first probe head connecting piece 12. The shock-absorbing and buffering structure is achieved through the connection between the boss 11 on the fixed support 6 and the first probe head connecting piece 12. As can be seen from the drawings, the first detector 1 is provided with a boss 11, which is connected to the first probe head connecting piece 12 through the shock-absorbing and buffering structure. The shock-absorbing and buffering structure allows the probe head, connecting rod, and connecting piece to form an elastic contact, and when the first probe head 131 abuts the upper surface of the crystal ingot, there is a certain redundant space for movement, avoiding damage to the crystal ingot caused by rigid contact.

[0066] In some embodiments, the damping buffer structure includes a damping rod 15 connected with the boss 11 and the first probe head connecting piece 12, the damping rod 15 has a threaded end 150 at one end and a bottom end 156 at the other end, a sliding part 157 is between the bottom end 156 and the threaded end 150, a spring 14 is sleeved on the outer periphery of the sliding part 157, and the sizes of the sliding part 157 and the threaded end 150 can be adjusted according to different requirements. As can be seen from the drawings, the damping rod 15 is of a segmented structure, and the threaded end 150, the sliding part 157 and the bottom end 156 form the whole damping rod 15. The sliding part 157 of the damping rod 15 passes through the sliding hole 122 of the first probe head connecting piece 12 and the corresponding hole of the boss 11, the threaded end 150 is threadedly connected with the fixing nut 16, the threaded end 150 is located on one side of the first probe head connecting piece 12, the bottom end 156 is located on the other side of the first probe head connecting piece 12, and the outer periphery of the sliding part 157 is sleeved with the spring 14. Since the outer surface of the sliding part 157 is smooth, the damping rod 15 can move in the sliding hole 122, and the elastic potential energy accumulated or released by the spring 14 can relieve the pressure of rigid contact on the upper surface of the crystal ingot and prevent damage to the crystal ingot.

[0067] In other embodiments, the damping buffer structure adopts a damping buffer mode in which a buffer piece 153 and a piston 154 cooperate, the upper edge of the buffer piece 153 is connected with a first threaded rod 152, the first threaded rod 152 is used for threadedly connecting with a first nut 151, the buffer piece 153 has a containing cavity 1531, the upper edge of the piston 154 is provided with a piston rod 1541, the lower edge of the piston 154 is provided with a second threaded rod 1542, the piston rod 1541 can extend into the containing cavity 1531, and the second threaded rod 1542 is threadedly connected with a second nut 155. When the first probe head 131 contacts the upper surface of the crystal ingot, the first probe head 131, the first probe head connecting rod 13 and the first probe head connecting piece 12 conduct the kinetic energy generated by the resistance to the damping buffer structure, the piston 154 in the damping buffer structure moves in the containing cavity 1531 of the buffer piece 153 through the piston rod 1541, and the air in the containing cavity 1531 is extruded, so that a large amount of kinetic energy brought by abutting against the surface of the crystal ingot is consumed, and the damping buffer effect is achieved. In the above-mentioned embodiments, the boss 11 is located in the middle of the fixed column 6, and in other embodiments, the boss 11 can be located at other positions of the fixed column 6, and the specific position of the boss 11 does not constitute a limitation on the embodiments and the protection scope.

[0068] In other embodiments, the damping buffer structure adopts a combination of the connecting rod 124, the armature 123 and the inductor coil 66 to detect whether the first probe head 131 is in contact with the upper surface of the crystal ingot, and to measure whether the first probe head 131 moves within a reasonable range by detecting the change in inductance caused by the displacement of the armature 123 in the inductor coil 66. In these embodiments, the first probe head connector 12 is installed near one side of the fixed support column 6 with the connecting rod 124 extending into the connecting rod cavity 64 of the fixed support column 6, and the armature 123 at the end of the connecting rod 124 away from the first probe head connector 12 extends into the inductor coil 66. When the first probe head 131 comes into contact with the upper surface of the crystal ingot, the connecting rod mechanism composed of the first probe head connector 12, the first probe head connecting rod 13, the spring 14 and the damping rod 15 will drive the connecting rod 124 and the armature 123 to move in the connecting rod cavity 64, the air gap between the armature 123 and the inductor coil 66 will change, causing the self-inductance or mutual inductance of the inductor coil to change synchronously, and in turn changing the inductance of the inductor coil 66. The change in inductance can determine whether the first probe head 131 is in contact with the upper surface of the crystal ingot. The total magnetic resistance of the inductor coil 66 includes the core magnetic resistance, the armature magnetic resistance and the air gap, and the core magnetic resistance and the armature magnetic resistance can be ignored in engineering practice. Therefore, the total magnetic resistance of the inductor coil 66 can be approximately considered to be determined by the air gap between the armature and the inductor coil 66. When the armature 123 moves in the connecting rod cavity 64 and the inductor coil 66, it will change the air gap and cause the total magnetic resistance of the inductor coil 66 to change, and in turn change the inductance of the inductor coil 66. By setting the corresponding equivalent circuit and measurement circuit, the inductance change value of the inductor coil 66 can be obtained, and in turn the contact condition of the first probe head 131 with the upper surface of the crystal ingot can be known. To realize the connection of the connecting rod 124 in the connecting rod cavity 64, a fulcrum shaft 65 can be provided, one end of which is rotatably connected with the connecting rod 124, and the other end is fixedly connected with the inner wall of the connecting rod cavity 64. The connecting rod 124 can move in the connecting rod cavity 64 with the fulcrum shaft 65 as the fulcrum. The fulcrum shaft 65 plays a role in controlling the movement of the connecting rod 124, preventing it from moving excessively or coming off the connecting rod cavity 64. The contact between the first probe head 131 and the upper surface of the crystal ingot will affect the accuracy of the first height L1 to some extent. The technical problem solved by the present embodiment is to overcome the above defects, for example, by setting the sensitivity of the inductance change detection and setting an allowable error range. In the above embodiments, the boss 11 is located at the upper end side of the fixed support column 6. In other embodiments, the boss 11 can be located elsewhere on the fixed support column 6, and the specific position of the boss 11 does not constitute a limitation on the embodiments and the scope of protection.

[0069] In the specific embodiments of the damping buffer structure, different damping buffer structures and probe head contact detection mechanisms can be combined with each other to form more damping buffer structures. For example, the damping rod 15, the buffer piece 153 and the piston 154 in different embodiments can be combined to form a new damping buffer structure, and the probe head contact detection can be performed in the manner that the armature 123 cooperates with the inductor coil 66. The specific embodiments of the damping buffer structure provided in the specification are only illustrative, and the specific embodiments of the damping buffer structure are not limited to the specific structures provided in the specification without creative labor of those skilled in the art.

[0070] As preferred, in some embodiments, at least three first probe head connecting rods 13 are mounted on the first probe head connecting piece 12 of the first detector 1, and the at least three first probe head connecting rods 13 are arranged radially above the crystal ingot suction table 3. Each first probe head connecting rod 13 is provided with a first probe head 131. By providing multiple first probe heads 131, multiple position thickness data can be obtained at one time, which can ensure the reliability of the crystal ingot thickness detection compared with single data obtained by a single probe head.

[0071] As preferred, in some embodiments, a long slot type hole 121 is arranged on the first probe head connecting piece 12, and a fixed mounting hole 132 corresponding to the long slot type hole 121 is arranged on the first probe head connecting rod 13. The long slot type hole 121 is a long and narrow key groove, and the fixed mounting hole 132 is a circular mounting hole. Through the assembly relationship between the long and narrow key groove and the circular mounting hole, the extension length of each first probe head connecting rod 13 can be adjusted, and then the thickness of multiple different positions on the upper surface of the crystal ingot can be measured to obtain more effective thickness data.

[0072] The second detector 2 is provided with a second probe head connecting rod 21, and the second probe head connecting rod 21 is provided with a second probe head 211 at one end close to the crystal ingot suction table 3. The second probe head 211 is provided with a second probe end at one end close to the crystal ingot. When the second probe end abuts against the surface of the crystal ingot suction table 3, the second height L2 is obtained. Like the first probe head 131, the second probe head 211 also has a probe end and a mounting end. The second probe end is needle-shaped, and the corresponding mounting end is nut-shaped. The needle-shaped second probe end can accurately obtain the initial reference position, and the nut-shaped mounting end facilitates the mounting of the second probe head 211 on the second probe head connecting rod 21. When the crystal ingot thickness is detected, the second height L2 provided by the second detector 2 is the initial reference position of the crystal ingot thickness. At this time, the second detector 2 serves as a fixed component in the crystal ingot thickness detection device, and the second detector 2 cooperates with the first detector 1 to obtain the thickness of the crystal ingot by the lifting movement of the first detector 1.

[0073] When the thickness of the ingot is detected, the position of the second detector 2 needs to be switched, and the second detector 2 needs to be switched from the fixed initial reference position to other positions. In order to realize the position switching of the second detector 2, the second detector 2 is installed on a rotating lifting platform 23 through a fixed connecting piece 22 in some embodiments, the rotating lifting platform 23 is connected with the output end of a second rotating servo motor 24, a second lifting servo motor 25 is arranged below the second rotating servo motor 24, the output end of the second lifting servo motor 25 is connected with a second lead screw 27 through a second coupling 26, the second lead screw 27 is sleeved with a second sliding block 28, the second sliding block 28 is connected with the lower edge of a sliding block connecting piece 29, and the upper edge of the sliding block connecting piece 29 is fixedly connected with the second rotating servo motor 24.

[0074] As can be seen from the drawings, the first detector 1 and the second detector 2 are installed on the cross beam 4 through different connecting pieces, fixed pieces and other mechanical components. In order to complete the lifting and rotating movements, the second detector 2 needs to be connected with two servo motors, i.e. the second rotating servo motor 24 and the second lifting servo motor 25. The lifting and rotating of the second detector can be realized by controlling the two servo motors, and the initial reference position of the ingot detection is determined, so that the switching of ingots of different sizes is completed. The second lifting servo motor 25 is installed below the cross beam 4, the output shaft of the second lifting servo motor 25 penetrates through a connecting buckle 251 and is connected with one end of the second coupling 26. The connecting buckle 251 is in the shape of “jī”, the open end of the “jī” is connected with the cross beam 4, and the closed end is connected with the second lifting servo motor 25. The connecting buckle 251 is used to fixedly connect the second lifting servo motor to the cross beam 4. The second coupling 26 is also connected with the second lead screw 27, the second sliding block 28 is sleeved on the outer periphery of the second lead screw 27, one end of the second sliding block 28 close to the sliding block connecting piece 29 is a connecting end 281, the connecting end 281 is in the shape of a sheet, the area of the connecting end 281 is larger than that of the other parts of the second sliding block 28, and a larger contact area can be formed between the lower edge of the sliding block connecting piece 29 and the connecting end 281. When the second lifting servo motor 25 outputs power through the second coupling 26, the second lead screw 27 connected with the second coupling 26 performs lifting movement, synchronously driving the second sliding block 28 to perform lifting movement, the second sliding block 28 drives the sliding block connecting piece 29 to perform synchronous lifting movement through the connecting end 281, and then the second rotating servo motor 24, the rotating lifting platform 23 and the fixed connecting piece 22 installed on the upper edge of the sliding block connecting piece 29 perform synchronous lifting movement, realizing the lifting control of the second detector 2 in the vertical direction. In order to keep the accurate movement of the sliding block connecting piece 29 in the vertical direction, guide rods 291 are arranged at both ends of the sliding block connecting piece 29, and through holes corresponding to the guide rods 291 are arranged on the cross beam 4. The guide rods 291 move up and down under the limitation of the through holes, ensuring the accurate movement of the sliding block connecting piece 29 and other components connected therewith in the vertical direction.

[0075] The fixed connecting piece 22 is in the shape of "L", the "L" shape has two mutually perpendicular surfaces, one surface is connected with the second detector 2, and the other surface is fixedly connected with the upper edge of the rotating lifting platform 23, and the lower edge of the rotating lifting platform 23 is connected with the second rotating servo motor 24. The second rotating servo motor 24 can output power to make the rotating lifting platform 23 rotate, and the rotating lifting platform 23 drives the fixed connecting piece 22 and the second detector 2 to rotate. As can be seen, the second detector 2 realizes the actions of two degrees of freedom of lifting and rotating through two servo motors and various different connecting pieces and fasteners, can switch different sizes of crystal ingots, and re-determine the initial reference position for thickness detection.

[0076] As shown in Figures 17 to 22 The crystal ingot thickness detection device provided by the embodiment of the present application can be applied to various crystal ingot thickness detection devices in different scenes, and one or more crystal ingot thickness detection devices will be described below based on the main application scene of the embodiment of the present application. It is worth noting that the above embodiment introduces the basic functions of the crystal ingot thickness detection device, but does not mean that the combination of the crystal ingot thickness detection device is limited to the above basic functions. On the contrary, the meaning expressed by the embodiment of the present application is that on the basis of the above basic functions, the person skilled in the art can add one or more additional functions according to the existing technology, form infinite specific embodiments or technical solutions, and cannot think that the protection scope of the claim of the embodiment of the present application is limited to the basic functions of the crystal ingot thickness detection device because the embodiment of the present application does not disclose the above one or more additional functions.

[0077] In addition to the technical features disclosed in the foregoing specific embodiments, the ingot thickness detection device can further include an ingot suction table 3, a sliding platform 31, a crossbeam 4, a fixed base 5, a fixed support column 6, a first lifting servo motor 7, a fixed frame 8, a photoelectric sensor assembly, and the like. The fixed base 5 is used to fix the ingot thickness detection device on a stable plane, and the fixed base 5 is installed on the lower edge of the crossbeam 4. The upper edge of the crossbeam 4 is provided with a first detector 1, a second detector 2, a fixed support column 6, and a photoelectric sensor, and the like. The fixed frame 8 is fixedly installed on the crossbeam 4, and the fixed support column 6 is movably installed on the fixed frame 8. The fixed support column 6 is fixedly connected with the first detector 1, and the fixed support column 6 can drive the first detector 1 to move synchronously in the vertical direction under the action of the first lifting servo motor, so that the first detector 1 detects the first height of the upper surface of the ingot. The first lifting servo motor 7 is used to provide lifting power output. A first sliding block 9 is arranged in the fixed frame 8. One end of the first sliding block 9 is connected with a first lead screw 10. The other end of the first lead screw 10 is connected with the output shaft of the first lifting servo motor 7 through a first coupling 71. The fixed support column 6 is fixedly connected with the first sliding block 9, and the first detector 1 is fixedly connected with the fixed support column 6. The first lifting servo motor 7 is connected with the first lead screw 10 through the first coupling 71. The power output by the first lifting servo motor 7 is transmitted to the fixed support column 6 through the first lead screw 10 and the first sliding block 9, so that the first detector 1 connected with the fixed support column 6 moves in the vertical direction of the ingot thickness detection device, the detection of the height of the upper surface of the ingot is completed, and the first height L1 is obtained. It can be seen that the fixed support column 6, the first lifting servo motor 7, the fixed frame 8, the first sliding block 9, and the first lead screw 10 form a sliding device together. The sliding device is used to transmit the power output of the first lifting servo motor 7 to the first detector 1, and realizes the motion control of the first detector 1 in the vertical direction by the servo motor.

[0078] As preferred, in some embodiments, the fixed pillar 6 realizes accurate displacement measurement and movement position compensation of the first detector 1 through a grating ruler sensor 61 installed on one side of the fixed frame 8, the grating ruler sensor 61 has a measurement slide head 62 (reading end), a cable connection port 63 is installed at the bottom end of the measurement slide head 62, the cable connection port 63 is connected with a cable to transmit or receive sensing data, one side of the measurement slide head 62 is fixedly connected with the fixed pillar 6, and the reading end on the other side of the measurement slide head 62 is movably and non-contactly connected in the grating ruler sensor 61, the reading end reads the stripe information on the grating ruler sensor 61 through an optical system, the actual displacement data of the first detector 1 is obtained by acquiring the displacement of the fixed pillar 6, the actual displacement data of the first detector 1 is compared with the preset wafer thinning thickness to obtain a difference, the inevitable error caused by the transmission of the coupling and other mechanical mechanisms can be compensated according to the difference, the current wafer is re-ground and thinned for the second time until the measurement data meets the preset thinning thickness, and then the wafer grinding and thinning process is completed, the high precision and reliability of the wafer thinning process are ensured through the second grinding and thinning, and the efficiency of the wafer thinning process can be greatly improved.

[0079] As preferred, the wafer suction table 3 is compatible with a vacuum suction ceramic table of 8-inch and 12-inch wafers, and the wafer suction table 3 is slidably installed on a sliding platform 31. The wafer suction table 3 enters the below of the wafer thickness detection device through a feeding mechanism to detect the wafer thickness, and moves away from the wafer detection device through the sliding platform 31 after the thickness detection is completed.

[0080] As preferred, the cross beam 4 is connected with the fixed pillar 6 through a cross beam connecting plate 41, the cross beam 4 is provided with a positioning pin 42, the cross beam connecting plate 41 is provided with a pin hole 43 corresponding to the positioning pin 42, and the lower surface of the fixed frame 8 is provided with a positioning hole corresponding to the positioning pin 42 and the pin hole 43, and the two ends of the positioning pin 42 respectively extend into the positioning hole and the pin hole 43, so that the fixed frame 8 and the cross beam 4 are accurately assembled and positioned.

[0081] The photoelectric sensor assembly mounted on the crossbeam 4 is used to detect whether the second detector 2 has reached the initial reference height on the ingot adsorption stage. The photoelectric sensor assembly is installed on one side of the second detector 2 and includes a photoelectric sensor 45 and a light-blocking plate 46. The photoelectric sensor 45 is mounted on a fixed base 44, the bottom surface of which is fixed to the crossbeam 4. The light-blocking plate 46 is fixedly connected to the slider connector 29 and can move synchronously with it. During synchronous movement, the light-blocking plate 46 blocks or reflects light, allowing the photoelectric sensor 45 to detect whether the second detector 2 has reached the initial reference height on the ingot adsorption stage 3. The photoelectric sensor 45 has a notch, which is the detection end of the photoelectric sensor 45. The light-blocking plate 46 enters or leaves this notch during its lifting and lowering movement, enabling the photoelectric sensor 45 to sense whether the second detector 2 has reached the initial reference height for detecting the ingot thickness and limiting the movement of the second detector 2 within a certain range. As can be seen from this specific embodiment, the photoelectric sensor assembly can limit the movement of the second detector 2 by blocking or reflecting light through the light-blocking plate 46, and can obtain the second height L2 of the second detector 2. Of course, other methods can also be used to limit the movement of the second detector 2 and obtain the corresponding height. The implementation of the photoelectric sensor assembly provided in this specific embodiment is only one of many implementations and should not be regarded as a limitation on the movement of the second detector and the acquisition of the second height.

[0082] like Figure 23 As shown, this application embodiment, in addition to providing an ingot thickness detection device, also provides a corresponding ingot thickness measurement and control method, the method steps of which include:

[0083] Step S101: Control the first lifting servo motor 7 to output power so that the first detector 1 can detect the crystal ingot through the first probe head 131. If the first probe head 131 is detected to be abutting the upper surface of the crystal ingot, stop the first lifting servo motor 7 from outputting power and obtain the first height L1.

[0084] In step S102, the second lifting servo motor 25 and the second rotating servo motor 24 are controlled to output power so that the second probe head 211 of the second detector 2 reaches the upper surface of the crystal ingot adsorption stage and obtains the second height L2, which is the initial reference height for measuring the crystal ingot thickness.

[0085] Step S103: Obtain the current thickness of the ingot based on the height difference between the first height L1 and the second height L2.

[0086] As preferred, when the first lifting servo motor 7 is controlled to make the first detector 1 detect the ingot through the first detection head 131, the output shaft of the first lifting servo motor 7 outputs power to the first coupling 71, drives the first lead screw 10 and the first sliding block 9 to make linear motion perpendicular to the ingot adsorption table 3, and synchronously drives the fixed support 6 to move the first detector 1. Since the fixed support 6 is fixedly connected with the first sliding block 9, the fixed support 6 will synchronously move with the first sliding block 9 and the first lead screw 10 during the linear motion perpendicular to the ingot adsorption table 3.

[0087] The measurement control method provided by steps S101 to S103 controls the first lifting servo motor 7 to output power, uses the first detection head 131 to obtain the first height L1 of the upper surface of the ingot, controls the second lifting servo motor 25 and the second rotating servo motor 24 to use the second detection head 211 to obtain the second height L2 of the upper surface of the ingot adsorption table, cooperates multiple servo motors and detection heads, and finally uses the height difference between the first height and the second height to obtain the thickness of the ingot. The measurement control method provided by steps S101 to S103 can realize fully automatic online thickness measurement, and only needs to use servo motors to control two detection heads to realize the measurement of the thickness of the ingot, thereby reducing the measurement error and improving the measurement efficiency.

[0088] As preferred, the technical solution provided by steps S101 to S103 obtains the actual moving distance AL2 of the first detector 1 in the grating ruler sensor 61, compares the actual moving distance AL2 of the first detector 1 with the preset ingot thinning thickness AL1, and if there is a difference, regrinds and thins the current ingot again until the measurement data meet the preset thinning thickness, and the grinding and thinning process of the ingot ends.

[0089] The optimized technical solution obtains the actual moving distance AL2 of the first detector 1 through the grating ruler sensor 61, compensates the difference between the actual moving distance AL2 and the preset ingot thinning thickness AL1 through comparison and analysis, greatly enhances the detection accuracy of the ingot thinning, and greatly improves the efficiency of the ingot thinning process.

[0090] As shown in Figure 24 The ingot thickness measurement control method provided by the embodiment of the application can also be applied to automatic switching of ingots of different sizes in the thickness detection process. Taking the automatic switching of 8-inch ingots and 12-inch ingots in the detection process as an example, the method steps include:

[0091] Step T101: Control the second lifting servo motor 25 to output power to the second coupling 26 and the second lead screw 27, so that the second slider 28 sleeved on the outer periphery of the second lead screw 27 moves upward. The second slider 28 drives the slider connector 29 and the second detector 2 to move upward synchronously, so that the second probe head 211 of the second detector 2 is removed from the current initial reference position.

[0092] In step T102, the second rotary servo motor 24 is controlled to output power to drive the rotary lifting platform 23 and the second detector 2 to rotate synchronously until the position of the second detector 2 is above the crystal ingot adsorption stage 3.

[0093] In step T103, the second lifting servo motor 25 is controlled to output power to the second coupling 26 and the second lead screw 27, so that the second slider 28, which is sleeved on the outer periphery of the second lead screw 27, moves downward. The second slider 28 drives the slider connector 29 and the second detector 2 to move downward synchronously.

[0094] In step T104, the descent motion of the second detector 2 is detected by the photoelectric sensor assembly. When the second detector 2 descends to the initial reference position required for measuring the ingot thickness, the second lifting servo motor 25 is controlled to stop outputting power, so that the second probe head 211 of the second detector 2 enters the new initial reference position.

[0095] The ingot thickness measurement and control method provided in steps T101 to T104 can be applied to the automatic switching between 8-inch and 12-inch ingots during the detection process. Compared with the existing technology that relies on manual operation to replace the ingot measurement mechanism or device of 8-inch and 12-inch ingots, it solves the problem of cumbersome and inefficient manual operation, and avoids the problem of reduced detection accuracy caused by disassembling and installing ingots.

[0096] Preferably, in steps T101 to T104, the current initial reference position in step T101 is ( Figure 4 The second probe 211 is set as the initial position for measuring the thickness of an 8-inch ingot. In step T104, the new initial reference position is the initial reference position for measuring the thickness of a 12-inch ingot. Steps T101 to T104 represent the transition from the initial position for measuring the thickness of an 8-inch ingot to the initial position for measuring the thickness of a 12-inch ingot. In steps T101 to T104, when the second rotary servo motor 24 moves in the opposite direction, the transition from the initial position for measuring the thickness of a 12-inch ingot to the initial position for measuring the thickness of an 8-inch ingot can be completed.

[0097] To achieve the technical solutions provided in steps T101 to T104, the industrial network can be used to control a plurality of servo motors by using an upper computer, a programmable logic controller (PLC), a single-chip microcomputer (MCU), an embedded control system, or other industrial equipment as a main device, and to centrally manage a plurality of servo motors and other automated equipment through the industrial network. For example, a crystal ingot thickness detection system can be provided, and various communication protocols in the industrial network and control logic and algorithm support of the upper computer can be used to perform sensing data collection and analysis, system integration and expansion, servo motor control, and the like. Meanwhile, the technical solutions provided in steps T101 to T104 can be combined with the technical solutions provided in steps S101 to S103 to form new technical solutions. The new technical solutions can be used to achieve crystal ingot thickness detection and switching of crystal ingots with different thicknesses based on the crystal ingot thickness detection device, and finally achieve high-precision crystal ingot thinning and a high-efficiency crystal ingot thinning process.

[0098] Those skilled in the art can understand that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which embodiments of the present application belong. It should also be understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense unless specifically so defined.

[0099] It should be noted that the specification and claims of the present application use certain terms to refer to specific elements. Those skilled in the art can understand that different manufacturers, producers, etc. may use different terms to refer to the same element. The specification and claims of the present application do not use the difference in terms as a way to distinguish elements, but rather use the difference in function of elements as a criterion for distinction.

[0100] The technical features of the above embodiments can be combined in any manner. To make the description concise, not all possible combinations of the technical features in the above embodiments are described, but as long as the combinations of the technical features do not contradict, they should be considered within the scope of the specification of the present application.

[0101] In the description of the specification of the present application, the description of the terms "one embodiment", "example", "specific example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0102] In addition, the technical solutions among the various embodiments of the present application can be combined with each other, but must be based on the fact that a person of ordinary skill in the art can implement them. When the combination of technical solutions appears to be contradictory or unimplementable, it should be considered that the combination of technical solutions does not exist and is not within the protection scope required by the embodiments of the present application.

[0103] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them. Although the foregoing embodiments of the present application have been described in detail, a person of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features, and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A crystal ingot thickness detecting apparatus characterized by comprising: The application relates to a crystal ingot thickness detection device, which comprises the following parts: a first detector (1) arranged above a crystal ingot adsorption table and vertically lifted relative to the crystal ingot adsorption table, the first detector (1) being used for detecting a first height, the first height being the height of the upper surface of the crystal ingot; a second detector (2) arranged at the edge of the crystal ingot adsorption table and vertically lifted and horizontally rotated relative to the crystal ingot adsorption table, the second detector (2) being used for detecting a second height, the second height being the height of the surface of the crystal ingot adsorption table; the thickness of the crystal ingot to be detected is obtained according to the difference between the second height and the first height, and the second detector (2) is vertically lifted and horizontally rotated to switch between different sizes of crystal ingots during the detection of the thickness of the crystal ingot.

2. The crystal ingot thickness detecting apparatus according to claim 1, wherein The first detector (1) further comprises: a crystal ingot adsorption table (3) used for placing the crystal ingot to be detected; a first probe head connecting piece (12) connected with a first probe head connecting rod (13) at one end and fixedly connected with a fixed support (6) capable of vertically lifting relative to the crystal ingot adsorption table at the other end; a first probe head connecting rod (13) connected with the first probe head connecting piece (12) at one end and connected with a first probe head (131) at the other end; the first probe head (131) has a first detection end close to the crystal ingot adsorption table (3) and a mounting end away from the crystal ingot adsorption table, and the first height is obtained when the first detection end abuts against the upper surface of the crystal ingot.

3. The crystal ingot thickness detecting apparatus according to claim 2, wherein At least three first probe head connecting rods (13) are mounted on the first probe head connecting piece (12) of the first detector (1), and the three first probe head connecting rods are arranged in a radial manner above the crystal ingot adsorption table; the crystal ingot adsorption table (3) is a vacuum adsorption ceramic table compatible with 8-inch and 12-inch crystal ingots, and the crystal ingot adsorption table (3) is slidably mounted on a sliding platform (31); the second detector (2) is mounted on a rotating lifting platform (23) through a fixed connecting piece (22), the rotating lifting platform (23) is connected with the output end of a second rotating servo motor (24), a second lifting servo motor (25) is arranged below the second rotating servo motor (24), the output end of the second lifting servo motor (25) is connected with a second lead screw (27) through a second coupling (26), the second lead screw (27) is sleeved with a second sliding block (28), the lower edge of the second sliding block (28) is connected with a sliding block connecting piece (29), and the upper edge of the sliding block connecting piece (29) is fixedly connected with the second rotating servo motor (24); a second probe head connecting rod (21) is mounted on the second detector (2), a second probe head (211) is mounted on one end of the second probe head connecting rod (21) close to the crystal ingot adsorption table (3), and the second probe head (211) has a second detection end close to the crystal ingot, and the second height is obtained when the second detection end abuts against the surface of the crystal ingot adsorption table.

4. The crystal ingot thickness detecting apparatus according to claim 1, wherein The application further comprises: a cross beam (4) used for mounting the first detector (1) and the second detector (2). The crossbeam (4) is connected with the fixing frame (8) through a crossbeam connecting plate (41), and a positioning pin (42) is arranged on the crossbeam (4), and the crossbeam connecting plate (41) and the fixing frame (8) are provided with pin holes corresponding to the positioning pin (42), and the positioning pin (42) fixes the fixing frame (8) to the crossbeam through the pin holes; The fixed base (5) is installed at the lower edge of the crossbeam (4) and is used for fixing the crystal ingot thickness detection device on a plane; The fixed support column (6) is used for driving the first detector (1) to move synchronously in the vertical direction; The photoelectric sensor assembly is used for detecting whether the second detector (2) reaches the initial reference height on the crystal ingot suction table, and the photoelectric sensor assembly is installed on one side of the second detector (2) and comprises a photoelectric sensor (45) and a light shielding piece (46), the light shielding piece (46) moves synchronously with the second detector (2), and the photoelectric sensor (45) detects whether the second detector (2) reaches the initial reference height of the crystal ingot suction table (3) by shielding or reflecting light in the process of synchronous movement; The first lifting servo motor (7) is used for providing lifting power output for the first detector (1); The fixing frame (8) is provided with a first sliding block (9) in the fixing frame (8), the first sliding block (9) is fixedly connected with the fixed support column (6) and a first lead screw (10), and the other end of the first lead screw (10) is connected with the output shaft of the first lifting servo motor (7) through a first coupling (71).

5. The crystal ingot thickness detecting apparatus according to claim 2, wherein A boss (11) is arranged on the first detector (1), and the boss (11) is connected with the first probe head connecting piece (12) through a damping buffer structure.

6. The crystal ingot thickness detecting apparatus according to claim 5, wherein The damping buffer structure comprises a damping rod (15) connected with the first probe head connecting piece (12), one end of the damping rod (15) is a threaded end (150), the other end is a bottom end (156), a sliding part (157) is arranged between the bottom end (156) and the threaded end (150), and a spring (14) is sleeved on the outer periphery of the sliding part (157).

7. The ingot thickness detecting apparatus according to claim 5, wherein The damping buffer structure comprises a buffer piece (153) and a piston (154), a first threaded rod (152) is connected to the upper edge of the buffer piece (153), the first threaded rod (152) is used for being threadedly connected with a first nut (151), the buffer piece (153) has a containing cavity (1531), the upper edge of the piston (154) is provided with a piston rod (1541), the lower edge of the piston (154) is provided with a second threaded rod (1542), the piston rod (1541) is used for extending into the containing cavity (1531), and the second threaded rod (1542) is used for being threadedly connected with a second nut (155).

8. The ingot thickness detection apparatus according to claim 5, characterized by The first probe head connecting piece (12) is provided with a connecting strut (124) on one side close to the fixed support column (6), the connecting strut (124) extends into the connecting rod cavity (64) of the fixed support column (6), and the connecting strut (124) is provided with an armature (123) at an end away from the first probe head connecting piece (12), and the armature (123) extends into an inductive coil (66).

9. The ingot thickness detecting apparatus according to claim 8, wherein A fulcrum shaft (65) is arranged in the connecting rod cavity (64), one end of the fulcrum shaft (65) is rotatably connected with the connecting strut (124), and the other end is fixedly connected with the inner wall of the connecting rod cavity (64).

10. A crystal ingot thickness measurement control method of performing crystal ingot thickness detection based on the crystal ingot thickness detection apparatus according to any one of claims 1 to 9, characterized by Comprise: Controlling the first lifting servo motor (7) to output power, so that the first detector (1) detects the crystal ingot through the first probe head (131), if the first probe head (131) abuts against the upper surface of the crystal ingot, the power output of the first lifting servo motor (7) is stopped, and the first height (L1) is obtained; Controlling the second lifting servo motor (25) and the second rotating servo motor (24) to output power, so that the second probe head (211) of the second detector (2) reaches the upper surface of the crystal ingot adsorption table (3), and the second height (L2) is obtained, the second height (L2) is the initial reference height of the crystal ingot thickness measurement; According to the height difference between the first height (L1) and the second height (L2), the current thickness of the crystal ingot is obtained.

11. The crystal ingot thickness measurement control method according to claim 10, wherein When the first lifting servo motor (7) is controlled to make the first detector (1) detect the crystal ingot through the first probe head (131), the output shaft of the first lifting servo motor (7) outputs power to the first coupling (71), drives the first lead screw (10) and the first sliding block (9) to move linearly perpendicular to the crystal ingot adsorption table, and synchronously drives the first detector (1) to move with the fixed support column (6); By obtaining the displacement of the measuring sliding head (62) in the grating ruler sensor (61), the actual moving distance of the first detector (1) is obtained; The actual moving distance of the first detector (1) is compared with the preset crystal ingot thinning thickness, if there is a difference, the current crystal ingot is regrinded.

12. A crystal ingot thickness measurement control method, applied to automatic switching of crystal ingots of different sizes in the thickness detection process, characterized in that: Controlling the second lifting servo motor (25) to output power to the second coupling (26) and the second lead screw (27), so that the second sliding block (28) sleeved on the outer periphery of the second lead screw (27) moves upward, the second sliding block (28) drives the sliding block connecting piece (29) and the second detector (2) to move upward synchronously, so that the second probe head (211) of the second detector (2) is separated from the current initial reference position; Controlling the second rotating servo motor (24) to output power to drive the rotating lifting platform (23) and the second detector (2) to rotate synchronously until the position of the second detector (2) is above the crystal ingot adsorption table. The second lifting servo motor (25) outputs power to the second coupling (26) and the second lead screw (27), so that the second sliding block (28) sleeved on the outer periphery of the second lead screw (27) moves downward, and the second sliding block (28) drives the sliding block connecting piece (29) and the second detector (2) to move downward synchronously. The downward movement of the second detector (2) is detected by the photoelectric sensor assembly, and when the second detector (2) is lowered to the initial reference position required for the thickness measurement of the crystal ingot, the second lifting servo motor (25) stops outputting power, so that the second detection head (211) of the second detector (2) enters a new initial reference position.

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