Multi-cavity synchronous film-forming continuous ALD (atomic layer deposition) equipment capable of being externally hung

Abstract

The invention provides a multi-cavity synchronous film-forming continuous ALD device capable of being externally hung, and relates to the technical field of semiconductors and integrated circuit devices. Comprising an EFEM loading system, a vacuum transmission system and a process multi-inner-cavity structure connected to the peripheral side of the vacuum transmission system through an isolation seam valve. The EFEM loading system is connected with the vacuum transmission system; the vacuum transmission system is suitable for controlling a substrate to be transmitted between the EFEM loading system and the process multi-inner-cavity structure through a vacuum manipulator; the process multi-inner-cavity structure is configured to carry a heating door processing unit and an ICP processing unit in a switchable mode so as to achieve switching of a hot method process and an ICP process on equipment. According to the scheme, the applicability of equipment is improved, and the equipment cost is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor and integrated circuit equipment, in particular to a multi-cavity synchronous film-forming continuous ALD device which can be externally hung. BACKGROUND

[0002] There are mainly two forms of existing ALD devices: single-cavity single-body devices with pure thermal method inner-outer cavity structure and single-cavity single-body devices with pure ICP (inductively coupled plasma) inner-outer cavity structure. Both of the two devices have obvious technical defects. First, the single-cavity design leads to low yield, which cannot meet the demand of modern semiconductor manufacturing for high efficiency. Second, the single-body machine design requires breaking the vacuum environment every time the substrate is loaded, and manual operation is performed under atmospheric conditions, which introduces a large amount of particulate contamination (Partic), seriously affects the cleanliness of the substrate, increases the subsequent processing cost, and may even directly lead to product unqualification.

[0003] More importantly, the existing devices have serious deficiencies in process adaptability. The pure thermal method device can only handle high-temperature processes, and the pure ICP device is only suitable for gas activation under low-temperature high-energy process conditions. This single-functionality leads to poor device versatility, and users need to purchase different devices to meet the diversified process requirements, significantly increasing the equipment investment cost.

[0004] In the loading link, the existing devices expose more serious problems. The traditional single-body machine needs to completely expose the vacuum cavity to the atmospheric environment, and the material rack is loaded and unloaded through a manual door. This process not only makes the substrate directly contact the contaminated environment, but also causes the material rack to experience severe temperature cycling (alternating between high-temperature process environment and normal-temperature atmospheric environment). This working condition accelerates the peeling of the film layer on the surface of the material rack, generating a large amount of particulate contamination. Even for processes with high tolerance to particulate, this design also brings high process risk. SUMMARY The purpose of the present application is to provide a multi-cavity synchronous film-forming continuous ALD device which can be externally hung, having the advantages of improving yield, reducing particulate contamination, enhancing process adaptability, and reducing equipment cost.

[0005] The present application adopts the following scheme: A multi-cavity synchronous film-forming continuous ALD device which can be externally hung, comprising: an EFEM loading system, a vacuum transmission system, and a process multi-inner cavity structure connected to the side of the vacuum transmission system through an isolation slit valve; the EFEM loading system is connected to the vacuum transmission system; the vacuum transmission system is adapted to control the transmission of the substrate between the EFEM loading system and the process multi-inner cavity structure through a vacuum manipulator; the process multi-inner cavity structure is configured to switchably carry a heating door processing unit and an ICP processing unit to realize the switching of thermal process and ICP process on the device.

[0006] Further, the process multi-cavity structure comprises a vacuum lower cavity, a vacuum upper cavity, a multi-piece rack, a rotating system and a lifting transmission system; wherein the vacuum lower cavity is provided with a plurality of isolation slit valves to connect the vacuum transmission system; the vacuum upper cavity is provided with a vacuum outer cavity and a vacuum inner cavity arranged in the vacuum outer cavity; a heating system is arranged between the vacuum inner cavity and the vacuum outer cavity; one side of the vacuum outer cavity is formed with an open connection port for adapting the heating door processing unit or the ICP processing unit; at least two process inner cavities are arranged in the vacuum inner cavity, and each process inner cavity is provided with a multi-piece rack, and the bottom of the multi-piece rack is connected with a rotating system to drive the rotation thereof; the rotating system is connected with the lifting transmission system to drive the multi-piece rack to lift and transmit between the vacuum upper cavity and the vacuum lower cavity; and each process inner cavity is provided with an air inlet pipeline extending from top to bottom.

[0007] Further, the vacuum inner cavity is connected with a vacuum exhaust system, and the vacuum exhaust system comprises a plurality of vacuum exhaust pipelines connected to each process inner cavity and a vacuum pump connected with the vacuum exhaust pipelines.

[0008] Further, each rotating system is connected with the multi-piece rack through a rack base, and the rack base is configured to be capable of sealingly cooperating with the bottom lifting port of the process inner cavity when the multi-piece rack is lifted to a preset position.

[0009] Further, the heating door processing unit comprises a first vacuum door plate adapted to be connected with the open connection port of the vacuum outer cavity and a first heating processing unit fixedly connected with the first vacuum door plate, and the first heating processing unit is adapted to cooperate with the heating system to enclose the outside of the process inner cavity.

[0010] Further, the ICP processing unit comprises a second vacuum connection door plate adapted to be connected with the open connection port of the vacuum outer cavity and a coil connected with the second vacuum door plate, the coil is connected with a matching device to make the coil generate a stable electromagnetic field; a flow uniformizing plate is arranged inside the second vacuum door plate; an air inlet distribution system is connected between the flow uniformizing plate and the second vacuum door plate; and the flow uniformizing plate is formed with a conveying inner cavity adapted to be connected with the vacuum inner cavity on the side away from the second vacuum door plate.

[0011] Further, a flow guide block is arranged in the conveying inner cavity to block the plasma from directly sputtering on the air inlet pipeline.

[0012] Further, the second vacuum door plate comprises a docking mechanism and a quartz glass door plate connected to the docking mechanism, and a second heating treatment unit is arranged inside the docking mechanism.

[0013] Further, one side of the vacuum lower cavity is provided with a maintenance door.

[0014] Further, the vacuum transmission system comprises a vacuum cavity and a vacuum manipulator arranged in the vacuum cavity, and the vacuum cavity is connected to the process multi-inner cavity structure and the EFEM loading system through an isolation slit valve.

[0015] Beneficial effects: The application provides a multi-cavity synchronous film forming continuous ALD device which can be externally hung. Through the multi-cavity synchronous film forming design, the switchable heating door treatment unit and ICP treatment unit and the vacuum clean transmission system, the problems of low yield, serious particle pollution and poor process adaptability of the existing device are solved, and the device has the advantages of improving yield, reducing pollution, enhancing process adaptability and reducing cost. Specifically, the device comprises the following steps: 1) The same device can be compatible with two modes, i.e., a thermal process and an ICP process, and can meet the requirements of high-temperature processes and low-temperature high-energy processes at the same time; 2) The device can be connected to an external vacuum transmission system to meet the low Partic pollution requirement. The device can be connected to the ALD equipment module through the layout EFEM+vacuum transmission system commonly used in the semiconductor industry, and the problem of high Partic of the single machine is solved; 3) The device can realize double-cavity or multi-cavity synchronization, and can realize larger yield capacity. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 is a top view schematic diagram of a multi-cavity synchronous film forming continuous ALD device according to an embodiment of the application; Figure 2 is a front view schematic diagram of a multi-cavity synchronous film forming continuous ALD device according to an embodiment of the application; Figure 3 is a front view schematic diagram of a multi-cavity synchronous film forming continuous ALD device according to an embodiment of the application, which is provided with an ICP treatment unit; Figure 4 is a top view schematic diagram of a multi-cavity synchronous film forming continuous ALD device according to an embodiment of the application, which is provided with an ICP treatment unit; Figure 5 is a schematic diagram of an ICP treatment unit of a multi-cavity synchronous film forming continuous ALD device according to an embodiment of the application; Figure 6 is a schematic diagram of a flow uniformizing plate of an ICP treatment unit of a multi-cavity synchronous film forming continuous ALD device according to an embodiment of the application. Figure 7 is a front view schematic diagram of a multi-chamber synchronous film-forming continuous ALD equipment with a heating door processing unit according to an embodiment of the present application; Figure 8 is a top view schematic diagram of a multi-chamber synchronous film-forming continuous ALD equipment with a heating door processing unit according to an embodiment of the present application; Figure 9 is a front view schematic diagram of a process multi-inner chamber structure of a multi-chamber synchronous film-forming continuous ALD equipment according to an embodiment of the present application; Reference signs: EFEM loading system 1, rack 11, loading and unloading module 12, atmospheric mechanical hand 13, calibration module 14; vacuum transmission system 2, vacuum chamber 21, vacuum mechanical hand 22; process multi-inner chamber structure 3, vacuum lower chamber 31, isolation slit valve 311, maintenance door 312, vacuum upper chamber 32, vacuum outer chamber 321, open connection port 322, vacuum inner chamber 323, process inner chamber 3231, heating system 324, multi-piece rack 33, rotating system 34, lifting transmission system 35, gas inlet pipeline 36, vacuum exhaust system 37, vacuum pump 371, rack base 38; heating door processing unit 4, first vacuum door plate 41, first heating processing unit 42; ICP processing unit 5, second vacuum connection door plate 51, docking mechanism 511, quartz glass door plate 512, second heating processing unit 52, coil 53, matcher 54, uniform flow plate 55, gas inlet distribution system 56, conveying inner chamber 57, flow guide block 58. DETAILED DESCRIPTION

[0017] In combination Figures 1 to 9 As shown, the embodiment provides a multi-chamber synchronous film-forming continuous ALD equipment, which comprises: an EFEM loading system 1, a vacuum transmission system 2, and a process multi-inner chamber structure 3 connected to the side of the vacuum transmission system 2 through an isolation slit valve 311; the EFEM loading system 1 is connected to the vacuum transmission system 2; the vacuum transmission system 2 is adapted to control the transmission of substrates between the EFEM loading system 1 and the process multi-inner chamber structure 3 through a vacuum mechanical hand; the process multi-inner chamber structure 3 is configured to switchably carry a heating door processing unit 4 and an ICP processing unit 5 to realize the switching of thermal process and ICP process on the equipment. The process multi-inner chamber structure 3 is designed as a modular component that can carry the heating door processing unit 4 or the ICP processing unit 5, realizing the rapid conversion of thermal process and plasma process.

[0018] EFEM loading system 1 refers to a substrate automatic processing device that meets the semiconductor cleanliness standard and ensures clean transmission of the substrate in an atmospheric environment. Vacuum transmission system 2 refers to a substrate transfer device that maintains a vacuum environment. Process multi-cavity structure 3 refers to a vacuum processing unit with a modular interface. Isolation slit valve 311 refers to a vacuum environment isolation device that ensures the maintenance of vacuum degree when each process cavity operates independently. Through vacuum transmission system 2 and multi-cavity structure, closed processing is realized throughout the process, and multi-cavity parallel operation significantly improves the output per unit time. Modular design allows the device to be flexibly adjusted and configured according to process requirements, avoiding repeated purchase of special equipment. It effectively solves the problems of traditional equipment process mode solidification and low production efficiency. The modular cavity structure realizes free switching between thermal and plasma processes to meet diverse process requirements. The continuous transmission mechanism in a vacuum environment significantly reduces the risk of substrate contamination, and multi-cavity parallel operation significantly improves equipment productivity. Standardized interface design simplifies equipment maintenance and upgrade processes and reduces production line modification costs.

[0019] In combination Figures 1 to 2 As shown in the embodiment, the EFEM loading system 1 specifically includes a rack 11 and a plurality of loading and unloading modules 12, atmospheric mechanical hands 13, calibration modules 14, and high-efficiency filtration systems arranged on the rack 11. The atmospheric mechanical hands 13 are configured to transfer the substrate between the loading and unloading modules 12, the calibration modules 14, and the vacuum transmission system 2. The calibration modules 14 are used to correct the center position of the substrate and perform detection operations. The high-efficiency filtration systems are used to maintain the cleanliness of the internal environment of the loading system.

[0020] The rack 11 refers to a frame structure that carries various functional modules, and its internal space forms a closed transmission environment to isolate external pollution. The loading and unloading module 12 refers to the physical interface for loading and unloading the substrate, which can use a mechanical arm or a conveyor belt mechanism to realize automatic picking and placing of the substrate, avoiding pollution risks caused by manual contact. The atmospheric mechanical hand 13 refers to an automated transmission device operating in an atmospheric environment, such as a multi-axis mechanical arm combined with a vacuum suction cup structure. The calibration module 14 refers to a device with optical detection and positioning functions, such as a CCD vision system and a rotary positioning platform, which detects the substrate offset through image recognition technology and drives the positioning platform to compensate for the position. The high-efficiency filtration system refers to an air purification device composed of a HEPA filter 610 and a circulating fan, such as a laminar air supply mode, which maintains the appropriate cleanliness of the internal space of the system.

[0021] After the substrate enters the closed rack 11 through the loading and unloading module 12, the atmospheric mechanical hand 13 transfers it to the calibration module 14 for position correction and surface detection. The calibration module 14 identifies the edge position of the substrate through an optical sensor, drives the rotating platform to adjust the angle of the substrate, and ensures that the center thereof is accurately aligned with the transmission path. The substrate that has completed calibration is transferred by the atmospheric mechanical hand 13 to the vacuum transmission system 2 and the vacuum mechanical hand for material transfer, and the entire process is completed in a clean environment maintained by the high-efficiency filtration system. The high-efficiency filtration system transports purified air downward through the top air supply port, discharges particulate matter generated by the movement of the mechanical hand in the vertical direction, and avoids the deposition of particles on the surface of the substrate. By completely eliminating the manual intervention link through the closed rack 11 and the automated transmission device, the positioning compensation function of the calibration module 14 solves the problem of repeated positioning errors of the mechanical hand. The fully closed and automated operation of the substrate transmission process effectively isolates the atmospheric environmental pollutants.

[0022] In combination Figures 1 to 2 As shown in the embodiment, the vacuum transmission system 22 includes a vacuum cavity 21 and a vacuum mechanical hand 22 arranged in the vacuum cavity 21. The vacuum mechanical hand 22 is adapted to pass through the passage of the isolation slit valve 311 to transmit the substrate between different vacuum chambers.

[0023] The vacuum cavity 21 refers to a closed vacuum environment container, which is internally configured with a vacuum pump 371 group to maintain the required vacuum degree, so that the substrate is always in a vacuum environment and avoids contact with atmospheric pollutants. The vacuum mechanical hand 22 refers to a vacuum-compatible mechanical device with multiple degrees of freedom of movement. The device realizes the automated transmission of the substrate between modules through motion path planning, reducing the pollution risk caused by manual intervention. The isolation slit valve 311 refers to a vacuum valve with an openable sealing structure, for example, a gate plate structure can be used in combination with a fluorine rubber sealing ring to realize vacuum isolation. The valve maintains the vacuum independence of each module in the closed state, and forms a transmission passage for the mechanical hand to pass through when opened, balancing the demand for module independence and system linkage.

[0024] In combination Figures 1 to 9As shown, the process multi-lumen structure 3 includes a vacuum lower cavity 31, a vacuum upper cavity 32, a multi-piece carrier 33, a rotating system 34, and a lifting transmission system 35. The vacuum lower cavity 31 is provided with a plurality of isolation slit valves 311 to connect the vacuum transmission system 2. The vacuum upper cavity 32 is provided with a vacuum outer cavity 321 and a vacuum inner cavity 323, and a heating system 324 is arranged between the vacuum inner cavity 323 and the vacuum outer cavity 321. An open connection port 322 is formed on one side of the vacuum outer cavity 321 to adapt to the heating door processing unit 4 or the ICP processing unit 5. At least two process inner cavities 3231 are arranged in the vacuum inner cavity 323, and a multi-piece carrier 33 is arranged in each process inner cavity 3231. The bottom of the multi-piece carrier 33 is connected to the rotating system 34 to drive it to rotate. The rotating system 34 is connected to the lifting transmission system 35 to drive the multi-piece carrier 33 to lift and transmit between the vacuum upper cavity 32 and the vacuum lower cavity 31. Each process inner cavity 3231 is provided with an air inlet pipe 36 extending from top to bottom.

[0025] The vacuum lower cavity 31 is a transition cavity for docking the vacuum transmission system 2, which can be implemented by a metal sealing structure with a plurality of isolation slit valves 311. The isolation slit valves 311 can be configured as, for example, a gate type or a flap type vacuum valve, for maintaining a vacuum environment and realizing substrate transfer between cavities. The vacuum upper cavity 32 is a process processing area containing an inner-outer double-layer structure, which can be implemented by a split type welded cavity structure. Heating elements are arranged between the vacuum outer cavity 321 and the vacuum inner cavity 323. The open connection port 322 can be configured as a flange interface or other quick connection to adapt to the rapid switching of different processing units. The multi-piece carrier 33 is a carrier for stacking and carrying substrates, which can be implemented by a multi-layer frame structure made of graphite or ceramic material. Each layer can be provided with, for example, more than 50 substrate placing discs. The frame bottom is connected to the rotating system 34 through a bearing assembly. The rotating system 34 is a mechanism for driving the carrier to rotate, which can be implemented by a magnetic fluid sealed stepper motor cooperating with a reduction gear box. The lifting transmission system 35 is a device for driving the carrier to move vertically, which can be implemented by a servo motor cooperating with a ball screw or a linear motor module. The lifting stroke can cover the docking distance between the vacuum upper cavity 32 and the lower cavity.

[0026] After the substrate is transported from the EFEM loading system 1 to the vacuum lower cavity 31 by the vacuum transport system 2, the isolation slit valve 311 is opened to allow the substrate to enter the vacuum environment. The multi-piece carrier 33 is lowered from the vacuum upper cavity 32 to the lower cavity by the lifting transport system 35, and the vacuum robot loads the substrate into the placing disc of the carrier piece by piece. After the loading is completed, the carrier is raised to the process inner cavity 3231 of the vacuum upper cavity 32 by the lifting transport system 35, and the rotating system 34 drives the carrier to rotate at a constant speed. The gas inlet pipe 36 injects the reaction gas into the process inner cavity 3231, and the heating system 324 maintains the process temperature. The gas forms a uniform film on the surface of the rotating substrate. When it is necessary to switch the process type, the open connection port 322 of the vacuum outer cavity 321 can be quickly replaced by the heating door processing unit 4 or the ICP processing unit 5, for example, the heating unit is used to maintain a high temperature environment when depositing metal oxide, and the ICP unit is switched to generate plasma to activate the reaction gas when depositing nitride.

[0027] The multi-piece carrier 33 can be adapted to different specifications of 4-inch to 12-inch substrates, for example, by replacing the card slot module, the wafer size change can be processed without modifying the cavity structure. The problems of single process, low yield and substrate contamination of traditional ALD equipment are solved. The double-process inner cavity 3231 structure allows the equipment to process simultaneously, shortening the process cycle time. The switchable processing unit design meets the rapid conversion of thermal and plasma processes. The design of the flow guide block 58 effectively blocks the sputtering of the plasma to the gas inlet pipe 36.

[0028] In this embodiment, the vacuum inner cavity 323 is connected with a vacuum exhaust system 37, which includes a plurality of vacuum exhaust pipes connected to each process inner cavity 3231 and a vacuum pump 371 connected to the vacuum exhaust pipes. The vacuum exhaust system 37 refers to a gas exhaust device for maintaining the vacuum degree of the process inner cavity 3231, which can be realized by connecting each process inner cavity 3231 and the vacuum pump 371 with separate metal pipes. The separate pipe structure can independently control the exhaust rate of each process inner cavity 3231. The vacuum pump 371 is a power device for generating a negative pressure environment, which can be realized by using a dry pump. Each process inner cavity 3231 is connected to the vacuum pump 371 through an independent vacuum exhaust pipe. When the process inner cavity 3231 performs a film forming process, the reaction gas and by-products are removed by the vacuum pump 371 through the corresponding vacuum exhaust pipe. Since the exhaust paths of each process inner cavity 3231 are independent of each other, gas cross-contamination between different process cavities is avoided.

[0029] In this embodiment, each rotating system 34 is connected to the multi-piece carrier 33 through a carrier base 38, and the carrier base 38 is configured to be sealingly fitted with the bottom lifting port of the process cavity 3231 when the multi-piece carrier 33 is raised to a preset position. The carrier base 38 refers to a support structure fixed to the bottom of the multi-piece carrier 33, which can be made of high-temperature-resistant metal material. The preset position can be a specific height at which the multi-piece carrier 33 is aligned with the bottom of the process cavity 3231 during lifting, which can be determined by a position sensor or a mechanical limiting device, and the function is to ensure that the carrier base 38 is stably connected with the lifting port. The sealing fit refers to the airtight connection between the carrier base 38 and the lifting port through the contact surface pressure or the sealing ring, which prevents the process gas from leaking and maintains the vacuum environment.

[0030] When the multi-piece carrier 33 is sent into the process cavity 3231 by the lifting transmission system 35 until the carrier reaches the preset height. At this time, the carrier base 38 is tightly fitted with the lifting port at the bottom of the process cavity 3231 through the sealing structure, forming a closed process space. In this state, the process gas enters the cavity through the gas inlet pipeline 36, and the rotating system 34 continuously drives the carrier to rotate, ensuring uniform deposition of the film on the surface of the substrate. Through the sealing fit between the carrier base 38 and the lifting port, the stability of the vacuum environment is maintained, and the problem of uneven film caused by gas dissipation is avoided.

[0031] In combination with Figures 7 to 9As shown, in the embodiment, the heating door processing unit 4 includes a first vacuum door plate 41 adapted to be connected with the open connection port 322 of the vacuum outer cavity 321, and a first heating processing unit 42 fixedly connected on the first vacuum door plate 41, the first heating processing unit 42 is adapted to cooperate with the heating system 324 to enclose outside the process inner cavity 3231. Wherein, the first vacuum door plate 41 can be a metal structural member with vacuum sealing function, which can be realized by using stainless steel material combined with fluorine rubber sealing ring, for establishing physical isolation between the vacuum outer cavity 321 and the outside. The first heating processing unit 42 refers to a heating device integrated on the door plate, which can be realized by using a resistance wire heater combined with an alumina ceramic substrate, for forming an auxiliary heating area outside the process inner cavity 3231. When the equipment performs a thermal process, the first vacuum door plate 41 is docked with the open connection port 322 of the vacuum outer cavity 321 to form a sealed interface. The first heating processing unit 42 cooperates with the heating system 324 inside the vacuum outer cavity 321 to form a uniform temperature field on the outer surface of the process inner cavity 3231. This double heating structure enables the substrate carrying area of the process inner cavity 3231 to maintain a stable thermal environment, avoiding the phenomenon of film layer unevenness caused by temperature gradient. During the process, the multi-piece carrier 33 is driven by the rotating system 34 to continuously rotate the substrate, cooperating with the gas distribution of the gas inlet pipeline 36 to realize three-dimensional film forming. The double heating structure is beneficial to the uniformity of the cavity, providing a stable process environment, constant temperature and vacuum environment. The constant temperature control of the process cavity in the thermal process is realized, and the pollution caused by the film layer falling off of the carrier and the process inner cavity due to sudden temperature change is eliminated. The sealed heating structure cooperates with the vacuum transmission system 2 to make the whole process of substrate processing in a clean environment, meeting the strict requirements of high-precision semiconductor process on particle control.

[0032] In combination Figures 3 to 6 As shown, the ICP processing unit 5 in the embodiment includes a second vacuum connection door plate 51 adapted to be connected with the open connection port 322 of the vacuum outer cavity 321, and a coil 53 connected on the second vacuum door plate, the coil 53 is connected with a matching device 54 to make the coil 53 generate a stable electromagnetic field; a flow uniformizing plate 55 is arranged inside the second vacuum door plate; a gas inlet distribution system 56 is connected between the flow uniformizing plate 55 and the second vacuum door plate; and a conveying inner cavity 57 adapted to be docked with the vacuum inner cavity 323 is formed on the side of the flow uniformizing plate 55 away from the second vacuum door plate.

[0033] The second vacuum connection door plate 51 refers to a detachable structure for sealing the open connection port 322 of the vacuum outer cavity 321, which can be implemented by a door plate assembly with a counter-flange and a sealing ring. Its function is to realize the quick connection and isolation of the ICP processing unit 5 and the process cavity. The coil 53 refers to a conductive element for generating a high-frequency electromagnetic field, which can be implemented by a spiral structure wound by a copper tube and connected to a radio frequency current. Its function is to excite the process gas to form a plasma by an electromagnetic field. The matching device 54 refers to a circuit module for adjusting the radio frequency power and the load impedance, which can be implemented by an automatic tuning capacitance network. Its function is to ensure stable output of the electromagnetic field and reduce energy reflection. The uniform flow plate 55 refers to a gas flow distribution structure with uniformly distributed through holes, which can be implemented by processing a honeycomb channel with a porous ceramic or metal plate. Its function is to make the process gas uniformly diffuse into the process cavity. The gas distribution system 56 refers to a pipeline assembly connecting the gas source and the uniform flow plate 55, which can be implemented by a multi-stage branch manifold cooperating with a flow controller. Its function is to accurately control the mixing ratio and flow rate of different process gases. The delivery inner cavity 57 refers to a transition space communicating with the vacuum inner cavity 323, which can be implemented by a ring-shaped or conical cavity structure. Its function is to guide the plasma and the reaction gas into the process cavity.

[0034] Specifically, the ICP processing unit 5 realizes sealed docking with the open connection port 322 of the vacuum outer cavity 321 through the second vacuum connection door plate 51. The coil 53 generates a high-frequency electromagnetic field under the control of the matching device 54, exciting the process gas entering the front end of the uniform flow plate 55 to form a plasma. The gas distribution system 56 delivers different reaction gases to the front end of the uniform flow plate 55 according to the set ratio, and the mixture is uniformly dispersed through the honeycomb channel of the uniform flow plate 55 and then enters the delivery inner cavity 57. The plasma and gas mixture are further mixed in the delivery inner cavity 57, and then enter the process area of the vacuum inner cavity 323 through the flow guide structure. In this process, the uniform flow plate 55 and the gas distribution system 56 work together to ensure uniform gas distribution, and the real-time impedance adjustment function of the matching device 54 can maintain the stability of the plasma.

[0035] This scheme adapts the design of double-process cavities or multiple-process cavities with a single ICP processing unit 5, and realizes uniform distribution of plasma and gas by using the uniform flow plate 55 and the delivery inner cavity 57, which reduces the complexity of the equipment and the floor area. In addition, the introduction of the flow guide block 58 can effectively block the direct sputtering of the plasma to the gas inlet pipe 36, significantly reducing the risk of film peeling compared to the traditional unprotected structure. It solves the problem that the traditional ICP process equipment cannot simultaneously consider the multi-cavity processing capacity and cost control, realizes uniform distribution and stable excitation of the plasma, and avoids contamination of the film layer of the gas inlet pipe 36. This design reduces the equipment manufacturing cost and maintenance difficulty under the premise of maintaining the process quality.

[0036] In the preferred embodiment, the flow guide 58 is arranged in the delivery inner cavity 57 to block the plasma from directly sputtering on the gas inlet pipe 36. The layout of the flow guide 58 allows the strong plasma to bypass the gas inlet pipe. Since the gas inlet pipe is located in the process cavity, the pipe will be coated with a thick film layer after a long time of operation. If the plasma directly hits the gas pipe, it will sputter the film layer on the pipe, causing the generation of Partic and polluting the overall process environment. The flow guide 58 is designed in a streamlined manner, which can block sputtering but allow active gas to flow around.

[0037] The flow guide 58 refers to a physical blocking structure arranged in the delivery inner cavity 57, which can be made of ceramic or quartz material with high temperature resistance and smooth surface, and has a streamlined curved surface. This structure blocks the high-energy plasma from directly impacting the surface of the gas inlet pipe, preventing the film layer from falling off and forming particulate pollution, while allowing the process gas to flow around the curved surface into the process area. The streamlined design refers to the surface profile of the flow guide 58 being a smooth transition curve, which can be an arc or wave structure optimized by aerodynamics. This design can disperse the energy of the plasma and change its motion path without hindering the gas flow, thereby reducing the direct impact on the gas inlet pipe 36.

[0038] Specifically, the flow guide 58 is arranged in an array form on the top or sidewall of the delivery inner cavity 57, covering the exposed area of the gas inlet pipe 36. When the plasma is excited between the uniform flow plate 55 and the second vacuum door plate, the high-energy particles move towards the gas inlet pipe under the action of the electromagnetic field. The curved surface structure of the flow guide 58 physically blocks and deflects the path, forcing the plasma to bypass the surface of the gas inlet pipe. The active process gas enters the process inner cavity 3231 through the gap between the flow guides 58 or the channel formed by the curved surface, ensuring that the uniformity of gas distribution is not affected. Through the streamlined blocking design of the flow guide 58, the gas transmission efficiency is maintained while effectively isolating the contact between the plasma and the gas inlet pipe, solving the problem of process stability caused by sputtering pollution. It can significantly reduce the particulate pollution caused by sputtering of the film layer on the gas inlet pipe during the plasma process, reduce the frequency of equipment maintenance, and at the same time ensure the uniform distribution of process gas, improve the film quality and the reliability of equipment operation.

[0039] In this embodiment, the second vacuum door plate includes a docking mechanism 511 and a quartz glass door plate 512 connected to the docking mechanism 511. The inside of the docking mechanism 511 is provided with a second heating treatment unit 52. The docking mechanism 511 refers to an assembly for realizing sealed connection with the open connection port 322 of the vacuum outer cavity 321, which can be realized by a combined structure with a metal flange and a sealing ring. The vacuum sealing interface is formed by the fastening force of the flange and the sealing ring. The quartz glass door plate 512 refers to a transparent isolation component made of high-purity quartz material, which can be realized by a quartz glass plate with high temperature resistance and excellent wave transmission performance, which can maintain vacuum sealing while allowing electromagnetic waves to penetrate. The second heating treatment unit 52 refers to an auxiliary heating device integrated inside the docking mechanism 511, which can be realized by a resistance heating wire or an embedded heating rod, used to maintain the temperature uniformity of the door plate area during the ICP process.

[0040] Specifically, the quartz glass door plate 512 is fixed to the docking mechanism 511, and the docking mechanism 511 and the open connection port 322 of the vacuum outer cavity 321 are connected by a vacuum sealing ring. During the operation of the ICP processing unit 5, the second heating treatment unit 52 generates heat by being powered on, and the quartz glass door plate 512 maintains a temperature close to the process cavity through heat conduction. The wave transmission property of quartz glass allows the electromagnetic field generated by the external coil 53 to penetrate into the process cavity, and its high temperature resistance ensures the structural stability in the hot process mode.

[0041] By combining the docking mechanism 511 and the built-in heating unit, the vacuum sealing reliability is maintained, the temperature continuity during process mode switching is realized, and the electromagnetic field penetration requirement is considered. It effectively solves the problem of film peeling caused by temperature fluctuations in the vacuum door plate area of traditional equipment, reduces the risk of leakage caused by thermal stress of the sealing interface, and ensures that the electromagnetic field required by the ICP process can efficiently penetrate into the process cavity, improving process stability and equipment compatibility.

[0042] In this embodiment, the vacuum lower cavity 31 is provided with a maintenance door 312 on one side. The maintenance door 312 refers to a sealable structure provided on the side of the vacuum lower cavity 31, which can be realized by a vacuum level door plate with a metal sealing ring or a rubber sealing ring, and its sealing performance needs to meet the air tightness requirement in the vacuum environment. The maintenance door 312 is arranged on the side of the vacuum lower cavity 31, which is convenient for the operator to perform maintenance work without affecting the operation of the vacuum transmission system 2, and the opening and closing action of the door can be realized by a hinge connection or a sliding rail structure. For example, the maintenance door 312 is detachably connected with the side wall of the vacuum lower cavity 31 through a vacuum level sealing structure. When it is necessary to clean the inside of the equipment, replace parts or troubleshoot, the operator can complete it in the vacuum lower cavity 31. After the maintenance is completed, the maintenance door 312 is closed again and the vacuum degree of the cavity is restored by the vacuum pump 371 group, and the whole process does not affect the vacuum upper cavity 32. The problem of particle pollution caused by breaking the vacuum operation in the maintenance process of the ALD equipment is effectively solved, and the equipment downtime is reduced. The independent arrangement of the maintenance door 312 makes the cleaning, maintenance and replacement operation of the internal components of the vacuum lower cavity 31 be completed directly in the isolated environment, avoiding the complex operation of disassembling the multi-cavity connection structure in the traditional maintenance method, improving the equipment maintenance efficiency and reducing the maintenance cost.

[0043] Through the above technical solution, the substrate pollution problem caused by the destruction of the vacuum environment in the traditional ALD equipment is solved, and the continuous production of multi-cavity synchronous film forming is realized. The combination design of the vacuum manipulator and the isolation slit valve 311 makes the substrate transmission process completely closed and avoids atmospheric exposure; the vacuum cavity as an independent transmission channel can adapt to different numbers of process cavities, improving the equipment expandability and process compatibility.

[0044] It should be understood that: the above is only the preferred embodiment of the present application, the protection scope of the present application is not limited to the above-mentioned embodiments, and any technical solution belonging to the idea of the present application belongs to the protection scope of the present application.

[0045] The above introduction of the drawings used in the embodiments only shows some embodiments of the present application, and should not be regarded as the limitation of the scope. For ordinary skilled in the art, other related drawings can be obtained according to these drawings without creative labor.

Claims

1. A multi-chamber synchronous film forming continuous ALD device which can be externally attached, characterized by, The application relates to a multi-process chamber structure for a semiconductor manufacturing equipment. The application comprises: an EFEM loading system, a vacuum transmission system, and a process multi-chamber structure connected with the vacuum transmission system through isolation slit valves; the EFEM loading system is connected with the vacuum transmission system; the vacuum transmission system is suitable for controlling the transmission of substrates between the EFEM loading system and the process multi-chamber structure through a vacuum manipulator; 2. The externally mountable multi-chamber synchronous film forming continuous ALD apparatus according to claim 1, wherein, the process multi-chamber structure is configured to switchably load a heating door processing unit and an ICP processing unit to realize the switching of a thermal process and an ICP process on the equipment. The process multi-chamber structure comprises a vacuum lower chamber, a vacuum upper chamber, a multi-piece rack, a rotating system and a lifting transmission system; wherein, the vacuum lower chamber is provided with a plurality of isolation slit valves to connect the vacuum transmission system; the vacuum upper chamber is provided with a vacuum outer chamber and a vacuum inner chamber in the vacuum outer chamber; a heating system is arranged between the vacuum inner chamber and the vacuum outer chamber; one side of the vacuum outer chamber is formed with an open connection port for adapting the heating door processing unit or the ICP processing unit; 3. The externally mountable multi-chamber synchronous film forming continuous ALD apparatus according to claim 2, wherein, the vacuum inner chamber is provided with at least two process chambers, each of which is provided with a multi-piece rack; the bottom of the multi-piece rack is connected with a rotating system to drive the rotation thereof; the rotating system is connected with the lifting transmission system to drive the multi-piece rack to lift and transmit between the vacuum upper chamber and the vacuum lower chamber; and each process chamber is provided with an air inlet pipe extending from top to bottom.

4. The externally mountable multi-chamber synchronous film forming continuous ALD apparatus according to claim 3, wherein, The vacuum inner chamber is connected with a vacuum exhaust system, which comprises a plurality of vacuum exhaust pipes connected with each process chamber and a vacuum pump connected with the vacuum exhaust pipes.

5. The externally mountable multi-chamber synchronous film forming continuous ALD apparatus according to claim 3, wherein, Each rotating system is connected with the multi-piece rack through a rack base, and the rack base is configured to be sealingly matched with the bottom lifting port of the process chamber when the multi-piece rack is lifted to a preset position.

6. The externally mountable multi-chamber synchronous film forming continuous ALD apparatus according to claim 3, wherein, The heating door processing unit comprises a first vacuum door plate adapted to be connected with the open connection port of the vacuum outer chamber and a first heating processing unit fixedly connected with the first vacuum door plate, and the first heating processing unit is adapted to be matched with the heating system to enclose the outside of the process chamber.

7. The externally mountable multi-chamber synchronous film forming continuous ALD apparatus according to claim 6, wherein, The ICP processing unit comprises a second vacuum connection door plate adapted to be connected with the open connection port of the vacuum outer chamber and a coil connected with the second vacuum door plate, the coil is connected with a matcher to make the coil generate a stable electromagnetic field; a flow uniformizing plate is arranged inside the second vacuum door plate; an air inlet distribution system is connected between the flow uniformizing plate and the second vacuum door plate; and the side of the flow uniformizing plate away from the second vacuum door plate is formed with a conveying inner chamber adapted to be docked with the vacuum inner chamber.

8. The externally mountable multi-chamber synchronous film forming continuous ALD apparatus according to claim 6, wherein, A flow guide block is arranged in the conveying inner chamber to block the direct sputtering of plasma on the air inlet pipe.

9. The externally mountable multi-chamber synchronous film forming continuous ALD apparatus of claim 6, wherein, The second vacuum door plate comprises a docking mechanism and a quartz glass door plate connected with the docking mechanism, and a second heating processing unit is arranged inside the docking mechanism. One side of the vacuum lower chamber is provided with a maintenance door.

10. The externally mountable multi-chamber synchronous film forming continuous ALD apparatus of claim 1, wherein, The vacuum transfer system includes a vacuum chamber and a vacuum robot disposed within the vacuum chamber, the vacuum chamber connecting the process multi-chamber structure and the EFEM load system through an isolation slit valve.

Images