Solid gas distribution disc and chemical vapor deposition device

Abstract

The invention discloses a solid gas distribution disc and a chemical vapor deposition device, and belongs to the technical field of chemical vapor deposition devices. The solid gas distribution disc comprises a distribution disc body and an annular structural part, a gas inlet is formed in the center of the top of the distribution disc body, a plurality of exhaust holes are formed in the bottom of the distribution disc body, a flow guide channel is formed in a first thickness layer in the distribution disc body, and one end of the flow guide channel communicates with the gas inlet; the other end of the flow guide channel extends in the radial direction of the distribution disc body, a plurality of flow guide through holes are formed in the second thickness layer in the distribution disc body, and the flow guide through holes communicate with the corresponding exhaust holes; the annular structural part is arranged on the annular wall of the distribution disc body in a sleeving mode, an annular air cavity is defined between the annular structural part and the distribution disc body, and the ends, facing the annular structural part, of the flow guide through holes and the flow guide channels communicate with the annular air cavity. The whole gas distribution plate is not prone to being affected by high-temperature deformation, and the flatness of the bottom of the gas distribution plate is guaranteed.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of chemical vapor deposition device, and particularly to a solidification gas distribution plate and a chemical vapor deposition device. BACKGROUND

[0002] CVD (chemical vapor deposition) gas distribution plate is a key component in semiconductor and thin film preparation process, mainly used for uniformly distributing reaction gas in the reaction chamber to ensure the uniformity and consistency of the deposited thin film. Through the precisely designed gas holes or channels, the reaction gas is uniformly introduced into the substrate surface to avoid local over-concentration or under-concentration. The gas distribution plate adapts to different gas chemical properties (such as corrosiveness and high temperature), meets different process requirements such as PECVD, LPCVD, etc., and needs to withstand vacuum (10-3Pa level) to high pressure (atmospheric pressure CVD) and high temperature (300℃-1000℃).

[0003] As shown in Figure 1 Because the hollow gas distribution plate 100 has a large volume of internal cavity 101, the overall structural strength of the hollow gas distribution plate 100 is reduced. When the hollow gas distribution plate 100 is in a high temperature environment for a long time, the plane of the hollow gas distribution plate 100 facing the wafer deforms, which can cause the film quality on the substrate surface to decrease. SUMMARY

[0004] The present application aims to provide a solidification gas distribution plate and a chemical vapor deposition device, which can improve the overall structural strength of the gas distribution plate, are not easily affected by high temperature deformation, ensure the flatness of the bottom of the gas distribution plate, and improve the film quality on the substrate surface.

[0005] To achieve the above-mentioned purpose, the following technical solutions are provided:

[0006] The solidification gas distribution plate comprises:

[0007] A distribution plate body, a gas inlet hole is arranged at the center of the top of the distribution plate body, a plurality of gas outlet holes are arranged at the bottom of the distribution plate body, a first thickness layer in the distribution plate body is provided with a flow guide channel, one end of the flow guide channel is communicated with the gas inlet hole, the other end of the flow guide channel extends along the radial direction of the distribution plate body, and a second thickness layer in the distribution plate body is provided with a plurality of flow guide through holes, the flow guide through holes are communicated with the corresponding gas outlet holes;

[0008] A ring-shaped structure is sleeved on the annular wall of the distribution disc body, and an annular air cavity is formed between the ring-shaped structure and the annular wall of the distribution disc body. The flow guide through hole and the flow guide channel are both communicated with the annular air cavity. The reaction gas can enter the annular air cavity through the gas inlet hole and the flow guide channel in sequence. The reaction gas flowing into the annular air cavity enters the gas outlet hole through the flow guide through hole and is discharged.

[0009] As an alternative to the solidified gas distribution disc, the first thickness layer in the distribution disc body is provided with a plurality of flow guide channels, which are centered on the gas inlet hole and each extend radially along the distribution disc body towards the ring-shaped structure.

[0010] As an alternative to the solidified gas distribution disc, a plurality of flow guide through holes are longitudinally and transversely distributed in the second thickness layer in the distribution disc body, and adjacent flow guide through holes are communicated with each other.

[0011] As an alternative to the solidified gas distribution disc, the annular wall of the distribution disc body is provided with an annular groove, the ring-shaped structure is sealingly connected with the annular wall of the distribution disc body, and the annular groove and the ring-shaped structure form the annular air cavity.

[0012] As an alternative to the solidified gas distribution disc, the solidified gas distribution disc further comprises:

[0013] A heating element, a mounting groove is provided on the top of the distribution disc body, the mounting groove has the same bending path as the heating element, and the heating element is embedded in the mounting groove.

[0014] As an alternative to the solidified gas distribution disc, the bending path of the heating element is symmetrically arranged.

[0015] As an alternative to the solidified gas distribution disc, the solidified gas distribution disc further comprises:

[0016] A gas inlet pipe, one end of the gas inlet pipe is inserted into the gas inlet hole.

[0017] As an alternative to the solidified gas distribution disc, an outer wall surface of the gas inlet pipe is provided with a first limiting portion, a hole wall of the gas inlet hole is provided with a second limiting portion, and the first limiting portion is stopped at the second limiting portion.

[0018] As an alternative to the solidified gas distribution disc, the solidified gas distribution disc further comprises:

[0019] The heat insulation pipe is fixedly arranged at the top of the distribution disc body and coaxially arranged with the air inlet hole, and an end cover part of the heat insulation pipe is provided with a center hole, a first avoiding hole and a second avoiding hole, the air inlet pipe is arranged in the center hole, the positive electrode wire is arranged in the first avoiding hole and connected with the first wire end of the heating element, and the negative electrode wire is arranged in the second avoiding hole and connected with the second wire end of the heating element.

[0020] The chemical vapor deposition device comprises a reaction chamber and the solidified gas distribution disc according to any one of the preceding embodiments.

[0021] Compared with the prior art, the present application has the following beneficial effects:

[0022] The solidified gas distribution disc comprises a distribution disc body and a ring-shaped structure arranged on the ring-shaped wall of the distribution disc body, and a ring-shaped air cavity is formed between the ring-shaped structure and the ring-shaped wall of the distribution disc body. The flow guide channel in the first thickness layer of the distribution disc body and the flow guide through hole in the second thickness layer of the distribution disc body are in communication with the ring-shaped air cavity. The reaction gas enters the ring-shaped air cavity through the air inlet hole and the flow guide channel in sequence, and the reaction gas flowing into the ring-shaped air cavity enters the air outlet hole through the flow guide through hole and is discharged. By arranging the flow guide channel and the flow guide through hole in the two thickness layers of the distribution disc body respectively, a large cavity is avoided to be directly machined in the distribution disc body, the structure design of the product cavity is simplified by solidification, the problem of film quality decline caused by high-temperature deformation of the CVD gas distribution disc during long-term use is solved, and the service life of the product is improved.

[0023] The chemical vapor deposition device comprises a reaction chamber and the solidified gas distribution disc according to any one of the preceding embodiments. BRIEF DESCRIPTION OF DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the description of the embodiments of the present application will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor on the basis of the contents of the embodiments of the present application and the drawings.

[0025] Figure 1 A schematic view of a hollow gas distribution disc in the prior art;

[0026] Figure 2 A schematic view of the assembly of the solidified gas distribution disc in the embodiments of the present application;

[0027] Figure 3 is a sectional view of the solidified gas distribution plate in an embodiment of the present application;

[0028] Figure 4 is an exploded schematic view of the solidified gas distribution plate in an embodiment of the present application;

[0029] Figure 5 is a side view of the distribution plate body in an embodiment of the present application;

[0030] Figure 6 is Figure 5 a sectional view in the direction of A-A;

[0031] Figure 7 is Figure 5 a sectional view in the direction of B-B;

[0032] Figure 8 is Figure 6 a sectional view in the direction of C-C.

[0033] Reference signs:

[0034] 100, hollowed gas distribution plate; 101, cavity;

[0035] 1, distribution plate body; 2, annular structure; 3, annular gas cavity; 4, heating element; 5, gas inlet pipe; 51, first limiting part; 6, heat insulation pipe; 61, end cap part; 611, central hole; 612, first avoiding hole; 613, second avoiding hole;

[0036] 11, gas inlet hole; 111, second limiting part; 12, gas outlet hole; 13, flow guiding passage; 14, flow guiding through hole; 15, annular groove; 16, mounting groove. DETAILED DESCRIPTION

[0037] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described below in connection with the drawings in the embodiments of the present application. Obviously, the described embodiments are some but not all of the embodiments of the present application. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0038] In the description of the present application, it should be noted that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of the present application is usually placed, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", "third" and the like are only used for differentiation and cannot be understood as indicating or implying relative importance. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0039] In the description of the present application, it should also be noted that, unless otherwise explicitly specified and limited, the terms "provided", "connected" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0040] The embodiments of the present application are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0041] The CVD (Chemical Vapor Deposition) gas distribution plate, as an indispensable key component in the process flow of semiconductor manufacturing and thin film preparation, plays a crucial role in the entire process system. Its core function is to achieve uniform distribution of reaction gas in the reaction chamber, which is crucial to ensure the uniformity and consistency of the final deposited thin film.

[0042] In the chemical vapor deposition process, the reaction gas needs to reach the substrate surface in a precise and uniform manner to form a high-quality thin film. The gas distribution plate uniformly introduces the reaction gas to the substrate surface through its internal carefully designed gas hole structure. The layout, size and shape of these gas holes are precisely calculated and optimized to avoid local over-concentration or under-concentration of reaction gas on the substrate surface. If the local gas concentration is too high, it may cause the thin film to grow too fast, resulting in stress concentration, coarse grains and other problems, affecting the mechanical and electrical properties of the thin film; while the local gas concentration is too low, it will make the thin film grow slowly, even cause the thin film to be missing or uneven, resulting in inconsistent thickness and composition of the thin film on the substrate surface, and further affecting the performance and reliability of the device.

[0043] The design of gas distribution plates also needs to fully consider the chemical properties of different gases. In semiconductor manufacturing and thin-film fabrication processes, various gases with different properties are used. For example, some gases are highly corrosive and can chemically erode materials; others require high temperatures to participate in reactions. This necessitates that the materials and structural design of the gas distribution plate be adapted to the chemical properties of these gases. It must not only possess good corrosion resistance to prevent damage from prolonged contact with corrosive gases, but also withstand high-temperature environments to ensure the stability of material performance at high temperatures, preventing deformation, softening, or chemical reactions.

[0044] Meanwhile, gas distribution disks need to meet various process requirements, such as PECVD (Plasma Enhanced Chemical Vapor Deposition) and LPCVD (Low Pressure Chemical Vapor Deposition). Different processes place different performance requirements on the gas distribution disk. For example, PECVD processes typically require a plasma environment, necessitating a gas distribution disk with good resistance to plasma bombardment; while LPCVD processes have higher requirements for uniform gas distribution and low-temperature deposition. Therefore, the design and manufacturing of gas distribution disks need to be customized according to specific process requirements to ensure stable operation under different process conditions.

[0045] In terms of the working environment, the gas distribution plate faces extreme working conditions. It needs to withstand conditions ranging from vacuum (10⁻³P) to... a The gas distribution disk operates across a wide pressure range, from high pressure (atmospheric pressure CVD) to high pressure (atmospheric pressure CVD). In a vacuum environment, the gas distribution disk needs to maintain structural integrity and airtightness to prevent outside air from entering the reaction chamber and affecting the purity and stability of the process; while in a high-pressure environment, it must be able to withstand the gas pressure to avoid rupture or deformation. Furthermore, the gas distribution disk needs to operate for extended periods in high-temperature environments (300℃-1000℃), where high temperatures can alter the physical and chemical properties of the material, such as thermal expansion and reduced strength.

[0046] like Figure 1 As shown, the commonly used hollow gas distribution disk 100 has certain structural defects. Due to its internal cavity 101 structure, and the relatively large volume of the cavity 101, while this design reduces the weight of the gas distribution disk to some extent, it significantly reduces its overall structural strength. Under prolonged exposure to high temperatures, the wafer-facing plane of the hollow gas distribution disk 100 is prone to deformation. This deformation disrupts the relative positional relationship between the gas distribution disk and the substrate surface and the uniformity of gas distribution, preventing the reactant gas from reaching the substrate surface uniformly as expected, thus leading to a decrease in the film quality on the substrate surface. This decrease in film quality directly affects the performance and yield of semiconductor devices, increasing production costs.

[0047] In order to improve the overall structural strength of the gas distribution plate, not easy to be affected by high temperature deformation, to ensure the flatness of the bottom of the gas distribution plate, improve the film quality of the substrate surface, the embodiment provides a solidification gas distribution plate, the following will be combined with Figures 2 to 8 The specific content of the embodiment will be described in detail.

[0048] The solidification gas distribution plate in the embodiment includes a distribution plate body 1 and an annular structure 2. The top center of the distribution plate body 1 is provided with an air inlet hole 11, and the position of the air inlet hole 11 is selected at the top center, which can ensure that the reaction gas has a relatively uniform initial distribution when entering the distribution plate body 1, and lay the foundation for subsequent uniform distribution. The bottom of the distribution plate body 1 is uniformly provided with a plurality of air outlet holes 12, which ensure that the reaction gas can be uniformly discharged from the distribution plate body 1 and cover the entire substrate surface.

[0049] The first thickness layer in the distribution plate body 1 is provided with a flow guide channel 13, one end of the flow guide channel 13 is communicated with the air inlet hole 11 at the top, and the reaction gas introduced by the air inlet hole 11 is quickly guided to the inside of the distribution plate body 1. The other end of the flow guide channel 13 extends along the radial direction of the distribution plate body 1, and this extension mode enables the reaction gas to preliminarily diffuse in the radial direction, preparing for subsequent more uniform distribution. A plurality of flow guide through holes 14 are arranged in the second thickness layer of the distribution plate body 1, each flow guide through hole 14 is communicated with a corresponding air outlet hole 12, forming an orderly gas discharge path. These flow guide through holes 14 are like "gas branch pipes" distributed inside the distribution plate body 1, which further guide the preliminarily diffused reaction gas to the air outlet hole 12, ensuring that the reaction gas can be smoothly discharged. The annular structure 2 is sleeved on the annular wall of the distribution plate body 1 and tightly fits therebetween. The annular structure 2 and the annular wall of the distribution plate body 1 are surrounded to form an annular air cavity 3. The annular air cavity 3 plays a crucial role in the entire gas distribution system, which is like a gas transit station, and plays a role in buffering and uniformly distributing gas. The ends of the flow guide through holes 14 and the flow guide channel 13 towards the annular structure 2 are communicated with the annular air cavity 3, forming a complete gas flow circuit. The reaction gas can enter the annular air cavity 3 through the air inlet hole 11 and the flow guide channel 13 in sequence, and be mixed and uniformly distributed in the annular air cavity 3. The reaction gas flowing into the annular air cavity 3 enters the air outlet hole 12 through the flow guide through hole 14 and is discharged, and finally reaches the substrate surface to participate in the film deposition process.

[0050] Briefly speaking, the traditional CVD gas distribution plate usually adopts a hollow design, with a large cavity inside. In the long-term use process, especially in high-temperature environment, this hollow structure will cause the overall structural strength of the gas distribution plate to be reduced. Due to thermal expansion and thermal stress, the wafer-facing plane of the gas distribution plate is prone to deformation. This deformation will seriously damage the uniformity of gas distribution, so that the reaction gas cannot reach the substrate surface in the expected way, resulting in the decline of the film quality on the substrate surface, such as uneven film thickness, inconsistent composition, etc., affecting the performance and reliability of semiconductor devices. The solidification gas distribution plate provided by the present application ingeniously avoids directly processing a larger cavity in the distribution plate body 1 by arranging the flow guide channel 13 and the plurality of flow guide through holes 14 in the two thickness layers of the distribution plate body 1. This solidification structure design significantly improves the structural strength of the gas distribution plate, so that it can better withstand thermal expansion and thermal stress in high-temperature environment. Even in the case of long-term high-temperature use, the solidification gas distribution plate can maintain the stability of the structure, effectively reducing the deformation of the wafer-facing plane, thereby solving the problem of decline of film quality caused by high-temperature deformation of the traditional gas distribution plate.

[0051] Due to the higher structural strength and better deformation resistance of the solidification gas distribution plate, it can maintain stable performance in the long-term use process. After high-temperature deformation, the traditional hollow gas distribution plate not only affects the film quality, but also accelerates the aging and damage of the material, resulting in a significant reduction in the service life of the product. The solidification gas distribution plate can effectively resist the influence of high temperature and pressure, reducing the frequency of maintenance and replacement due to deformation and damage, thereby significantly improving the service life of the product and reducing the production cost.

[0052] The design of the annular gas cavity 3 provides a buffer and uniform distribution space for the reaction gas. After entering the annular gas cavity 3, the reaction gas can be fully mixed and diffused in the cavity, so that the concentration and flow rate of the gas are more uniform. Then, the uniformly distributed reaction gas enters the exhaust hole 12 through the flow guide through hole 14 and is discharged, further ensuring the uniformity of the reaction gas when it reaches the substrate surface. This optimized gas distribution uniformity can improve the deposition quality of the film, so that the thickness and composition of the film are more uniform, thereby improving the performance and yield of semiconductor devices. Under different process conditions, the solidification gas distribution plate can maintain the stability of the structure and the uniformity of the gas distribution, reducing the product quality problems caused by changes in process parameters, and enhancing the adaptability and stability of the entire process.

[0053] Further, the first thickness layer within the distribution disc body 1 is provided with a plurality of flow guide channels 13, which are centered on the gas inlet hole 11 and each extend along the radial direction of the distribution disc body 1 towards the annular structure 2. From the perspective of fluid mechanics, when the reaction gas enters the distribution disc body 1 from the gas inlet hole 11, it will quickly disperse into each flow guide channel 13. Since the plurality of flow guide channels 13 are distributed radially around the gas inlet hole 11, it is equivalent to shunting and combing the originally possibly more concentrated and turbulent gas flow. Each flow guide channel 13 provides a relatively independent and smooth flow path for the gas, reducing the mutual collision and interference between gas molecules. The plurality of flow guide channels 13 accelerate the flow rate of the reaction gas, meaning that the gas can reach the annular structure 2 from the gas inlet hole 11 in a shorter time. In semiconductor and thin film preparation processes, time is a key factor. Fast gas delivery can shorten the entire process cycle and improve production efficiency. For example, in some large-scale integrated circuit manufacturing processes, a large amount of reaction gas needs to be uniformly distributed to the substrate surface in a short time to achieve high-speed and high-quality thin film deposition. Accelerated flow rate can ensure that the reaction gas reaches the designated position in time, avoiding process delays caused by slow gas delivery, thereby improving the overall efficiency of gas distribution.

[0054] Further, the plurality of flow guide through holes 14 are distributed longitudinally and transversely in the second thickness layer within the distribution disc body 1, and adjacent flow guide through holes 14 are interconnected. The longitudinal and transverse distribution of flow guide through holes 14 can make the best use of the internal space of the distribution disc body 1, providing more and more reasonable flow paths for the reaction gas. When the reaction gas flows from the annular gas cavity 3 into the second thickness layer, the longitudinal and transverse flow guide through holes 14 are like a complex maze, but this maze has a clear guide and can guide the gas to disperse uniformly in all directions. The interconnection between adjacent flow guide through holes 14 further enhances the flowability of the gas. This connectivity makes the gas flow process not limited by local obstacles and can freely shuttle throughout the second thickness layer. In the distribution disc body 1, the interconnection of flow guide through holes 14 ensures that the reaction gas can reach each exhaust hole 12 in the shortest path and fastest speed, improving the efficiency of gas distribution.

[0055] The crisscrossed flow guide holes 14 and the interconnection between adjacent holes create a uniform flow environment for the reaction gas. This allows the reaction gas to diffuse and flow in all directions and at multiple angles within the second thickness layer. When the reaction gas enters the network of crisscrossed flow guide holes 14, it will flow along different paths to each exhaust hole 12. Due to the interconnection between adjacent flow guide holes 14, the gas can supplement and adjust between different paths, so that each exhaust hole 12 can receive a relatively uniform gas flow. This uniform gas distribution is crucial for semiconductor and thin film manufacturing processes. During thin film deposition, uniform gas distribution ensures uniform thickness and composition of the thin film, thereby improving device performance and reliability. For example, when manufacturing integrated circuits, if the thin film thickness is not uniform, it may cause inconsistent resistance, capacitance, and other parameters of the circuit, affecting the performance and stability of the entire circuit.

[0056] The crisscrossed flow guide holes 14 that are interconnected form a stable gas flow channel system. During gas flow, it is inevitable to be affected by various factors such as pressure fluctuations and changes in gas flow rate. Traditional hollowed-out gas distribution plates may not effectively respond to these changes, leading to unstable gas flow, vortex, turbulence, and other phenomena, affecting the accuracy of gas distribution. However, the network of flow guide holes 14 in this embodiment has good buffering and adjusting effects. When the gas pressure or flow rate changes, the interconnected flow guide holes 14 can redistribute the gas between different holes, balancing the differences in pressure and flow rate. For example, when the gas pressure in a certain area suddenly rises, the excess gas can flow to areas with lower pressure through the interconnected flow guide holes 14, thereby maintaining the stability of the entire gas flow system. This stable gas flow ensures that the reaction gas reaches the substrate surface continuously and uniformly, improving process repeatability and reliability.

[0057] Exemplarily, the annular wall of the distribution plate body 1 is provided with an annular groove 15, and the annular structural member 2 is sealingly connected with the annular wall of the distribution plate body 1. The annular groove 15 and the annular structural member 2 form an annular air cavity 3. When the annular structural member 2 is connected with the annular wall of the distribution plate body 1 by a suitable sealing connection method, such as welding, sealing ring sealing, etc., a relatively independent and closed space, i.e. the annular air cavity 3, is formed between the annular groove 15 and the annular structural member 2. This design cleverly utilizes the symmetry and continuity of the annular structure, so that the annular air cavity 3 can uniformly surround the distribution plate body 1. The existence of the annular air cavity 3 provides an orderly channel and buffer space for the flow and distribution of the reaction gas, ensuring that the gas can be uniformly distributed to each exhaust hole 12 according to the predetermined path and manner, and then to the substrate surface for reaction.

[0058] Further, the solidified gas distribution plate further comprises a heating element 4, the top of the distribution plate body 1 is provided with a mounting groove 16, the mounting groove 16 has the same curved path as the heating element 4, and the heating element 4 is embedded in the mounting groove 16, which ensures that the heating element 4 can be stably assembled into the mounting groove 16 and cannot be loose or displaced. The curved path of the heating element 4 is designed according to the gas flow characteristics and heating requirements inside the gas distribution plate. The curved shape can make the heating element 4 realize longer heating length in limited space, thereby increasing the contact area with the gas and improving the heating efficiency.

[0059] Further, the curved path of the heating element 4 is symmetrically arranged. Under the symmetric curved path, the heat generated by the heating element 4 can be diffused to the surrounding space in a symmetric manner. When the reaction gas flows through the distribution plate, it can be uniformly heated by radiation and convection regardless of the direction of the gas entering. For example, in the semiconductor manufacturing process, such as the chemical vapor deposition (CVD) process, the uniformity of the temperature of the reaction gas is crucial to the quality and performance of the thin film. If the gas temperature is not uniform, it will cause the deposition rate of the thin film to be inconsistent, and the composition distribution to be uneven, thereby affecting the electrical performance and reliability of the device. The symmetrically arranged curved path of the heating element 4 can ensure that the gas is uniformly heated in the entire distribution plate area, so that the deviation of the gas temperature distribution is controlled within a very small range, which provides a guarantee for the deposition of high-quality thin films.

[0060] Further, the solidified gas distribution plate further comprises a gas inlet pipe 5, one end of the gas inlet pipe 5 is inserted into the gas inlet hole 11. The size and shape of the gas inlet hole 11 are adapted to the gas inlet pipe 5 to ensure that the outer diameter of the gas inlet pipe 5 is tightly matched, forming a good sealing effect to prevent gas leakage during the inlet process. This insertion connection method is simple and direct, which can quickly realize the butt joint of the gas channel and provide basic conditions for the smooth input of the gas.

[0061] Further, the outer wall surface of the air inlet pipe 5 is provided with a first limiting part 51, and the hole wall of the air inlet hole 11 is provided with a second limiting part 111, and the first limiting part 51 is stopped at the second limiting part 111. The first limiting part 51 and the second limiting part 111 are provided to solve the problem of axial movement of the air inlet pipe 5 during installation and use. The first limiting part 51 is usually a protrusion, a ring groove or the like formed on the outer wall surface of the air inlet pipe 5 by a special machining process, and its shape and size are determined according to the overall design and use requirements of the air inlet pipe 5. The second limiting part 111 is a structure such as a groove or a boss machined at a corresponding position in the hole wall of the air inlet hole 11. When the air inlet pipe 5 is inserted into the air inlet hole 11, the first limiting part 51 and the second limiting part 111 are engaged with each other to form a mechanical stop, effectively limiting the movement of the air inlet pipe 5 in the axial direction, and ensuring that the air inlet pipe 5 always remains in the correct installation position. The cooperation of the first limiting part 51 and the second limiting part 111 can enhance the sealing performance between the air inlet pipe 5 and the air inlet hole 11. Exemplarily, the first limiting part 51 and the second limiting part 111 are both in the shape of a circular truncated cone.

[0062] Further, the solidification gas distribution disc further comprises a heat insulation pipe 6 fixedly arranged at the top of the distribution disc body 1 and coaxially arranged with the air inlet hole 11, and the coaxial arrangement of the heat insulation pipe 6 and the air inlet hole 11 has a positive effect on gas flow. When the gas enters the solidification gas distribution disc, due to the straight and smooth path, the gas can flow at a relatively stable speed and direction, reducing the gas flow turbulence caused by pipe bending or misalignment. Such uniform gas flow helps the gas to be more evenly distributed and distributed in the solidification gas distribution disc, ensuring that the gas flow and flow rate of each area are basically consistent. The end cover part 61 of the heat insulation pipe 6 is provided with a center hole 611, a first avoiding hole 612 and a second avoiding hole 613, the center hole 611 is a dedicated passage for the air inlet pipe 5, the air inlet pipe 5 is accurately arranged in the center hole 611, and the two are tightly matched, which not only ensures that the gas can smoothly enter the inside of the solidification gas distribution disc from the outside, but also reduces the influence of the external environment on the temperature field inside the distribution disc through the isolation effect of the heat insulation pipe 6, maintaining a relatively stable temperature environment inside the distribution disc. The positive electrode wire is arranged in the first avoiding hole 612 and connected with the first wiring end of the heating element 4, and the negative electrode wire is arranged in the second avoiding hole 613 and connected with the second wiring end of the heating element 4. The first avoiding hole 612 and the second avoiding hole 613 respectively provide a passage for the positive electrode wire and the negative electrode wire, so that they can be accurately connected with the first wiring end and the second wiring end of the heating element 4, thereby providing stable power supply for the heating element 4 and realizing the heating function of the gas. The main function of the heat insulation pipe 6 is to isolate heat. When the heating element 4 works, a large amount of heat will be generated, if these heat cannot be effectively isolated and controlled, the high temperature may also cause damage to other parts around the distribution disc body 1, reducing the stability and reliability of the system.

[0063] The embodiment also provides a chemical vapor deposition device, which comprises a reaction chamber and the solidification gas distribution plate mentioned above, and the solidification gas distribution plate is arranged in the reaction chamber. The structure design of the product cavity is reduced by solidification, the problem of film quality decline caused by high temperature deformation of the CVD gas distribution plate in long-term use is solved, and the service life of the product is improved.

[0064] It should be noted that the above only describes the preferred embodiments of the present application and the technical principles applied. Those skilled in the art will understand that the present application is not limited to the specific embodiments described herein, and various obvious changes, re-adjustments and substitutions can be made by those skilled in the art without departing from the scope of the present application. Therefore, although the present application has been described in more detail through the above embodiments, the present application is not limited to the above embodiments, and can include more other equivalent embodiments without departing from the concept of the present application, and the scope of the present application is determined by the scope of the appended claims.

Claims

1. A solidifying gas distribution plate, characterized in that, The application relates to a solidification gas distribution disc, which comprises the following parts: a distribution disc body (1) provided with an air inlet hole (11) at the top center of the distribution disc body (1), a plurality of air outlet holes (12) arranged at the bottom of the distribution disc body (1), a first thickness layer in the distribution disc body (1) provided with a flow guide channel (13), one end of the flow guide channel (13) being communicated with the air inlet hole (11), the other end of the flow guide channel (13) extending along the radial direction of the distribution disc body (1), and a second thickness layer in the distribution disc body (1) provided with a plurality of flow guide through holes (14) communicated with corresponding air outlet holes (12); a ring-shaped structure (2) sleeved on the annular wall of the distribution disc body (1), a ring-shaped air cavity (3) being formed between the ring-shaped structure (2) and the annular wall of the distribution disc body (1), the flow guide through holes (14) and the flow guide channel (13) being communicated with the ring-shaped air cavity (3) at one end of the ring-shaped structure (2), and reaction gas being capable of entering the ring-shaped air cavity (3) through the air inlet hole (11) and the flow guide channel (13) in sequence, the reaction gas flowing into the ring-shaped air cavity (3) being capable of entering the air outlet holes (12) through the flow guide through holes (14) and being discharged.

2. The solidification gas distribution plate of claim 1, wherein, The first thickness layer in the distribution disc body (1) is provided with a plurality of flow guide channels (13) which are centered on the air inlet hole (11) and respectively extend along the radial direction of the distribution disc body (1) towards the ring-shaped structure (2).

3. The solidification gas distribution plate of claim 1, wherein, The plurality of flow guide through holes (14) are distributed in the second thickness layer in the distribution disc body (1) in a longitudinal and transverse staggered mode, and adjacent flow guide through holes (14) are communicated with each other.

4. The solidification gas distribution plate of claim 1, wherein, The annular wall of the distribution disc body (1) is provided with a ring-shaped groove (15), the ring-shaped structure (2) is sealingly connected with the annular wall of the distribution disc body (1), and the ring-shaped groove (15) and the ring-shaped structure (2) form the ring-shaped air cavity (3).

5. The solidification gas distribution plate of claim 1, wherein, The solidification gas distribution disc further comprises: a heating element (4), a mounting groove (16) being arranged at the top of the distribution disc body (1), the mounting groove (16) having the same bending path as the heating element (4), and the heating element (4) being embedded in the mounting groove (16).

6. The solidification gas distribution plate of claim 5, wherein, The bending path of the heating element (4) is symmetrically arranged.

7. The solidification gas distribution plate of claim 5, wherein, The solidification gas distribution disc further comprises: an air inlet pipe (5), one end of the air inlet pipe (5) being inserted into the air inlet hole (11).

8. The solidification gas distribution plate of claim 7, wherein, An outer wall surface of the air inlet pipe (5) is provided with a first limiting part (51), a hole wall of the air inlet hole (11) is provided with a second limiting part (111), and the first limiting part (51) is stopped at the second limiting part (111).

9. The solidification gas distribution plate of claim 7, wherein, The solidification gas distribution disc further comprises: A heat insulation pipe (6) is fixedly arranged on the top of the distribution disc body (1) and coaxially arranged with the air inlet hole (11), an end cover part (61) of the heat insulation pipe (6) is provided with a center hole (611), a first avoiding hole (612) and a second avoiding hole (613), the air inlet pipe (5) is arranged in the center hole (611), the positive electrode wire is arranged in the first avoiding hole (612) and connected with the first wire end of the heating element (4), and the negative electrode wire is arranged in the second avoiding hole (613) and connected with the second wire end of the heating element (4).

10. A chemical vapor deposition apparatus characterized by comprising: A reactor chamber and a solidification gas distribution disc as claimed in any one of claims 1-9 are included, the solidification gas distribution disc being arranged in the reactor chamber.

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