Wafer exposure typesetting method

Abstract

The invention provides a wafer exposure typesetting method, which comprises the following steps that: firstly, a plurality of linear exposure paths are planned for a wafer, each linear exposure path comprises a plurality of rectangular exposure field areas which are arranged side by side along a straight line, and any rectangular exposure field area is partially overlapped with another adjacent rectangular exposure field area; a photomask of a honeycomb structure composed of a plurality of complete regular hexagon units is provided, the photomask is utilized to move one by one along a plurality of linear exposure paths, and when the photomask moves along any linear exposure path, the photomask moves one by one along a plurality of rectangular exposure field areas arranged side by side; wherein the side edge of the photomask which moves to the first exposure position in any rectangular exposure field area is locally embedded with the corresponding side edge of the photomask which correspondingly moves to the second exposure position in another adjacent rectangular exposure field area.

Description

TECHNICAL FIELD

[0001] The present application relates to a wafer exposure layout method, in particular to a wafer exposure layout method capable of improving wafer utilization. BACKGROUND

[0002] Conventional step-and-repeat exposure equipment can be applied to exposure process of large area wafer. The step-and-repeat exposure equipment is a dynamic moving method using single field exposure. As shown in Figure 1 , the step-and-repeat exposure equipment first plans multiple field regions Z1-Zn for wafer W, and then performs exposure for local region of wafer W corresponding to single field region Z1 by mask. After the exposure of field region Z1 is completed, relative movement between wafer W and mask is performed, so that mask can perform exposure for local region of wafer corresponding to next single field region Z2. The operation is repeated until all set regions of the whole wafer are completed exposure.

[0003] For example, the wafer W with hexagonal dies is applied, as shown in Figure 1 and Figure 2 , the conventional mask Y is designed as a rectangular structure conforming to field region size, and the internal rectangular structure is composed of complete hexagonal units corresponding to hexagonal dies. Since two adjacent field regions (for example, two horizontally adjacent field regions Z1 and Z2 or two vertically adjacent field regions Z1 and Z4) are connected by corresponding side edges, when exposure process is performed for multiple field regions Z1-Zn by mask Y, alignment error between two adjacent field regions is easily caused, so that local hexagonal units of one field region cannot be completely aligned with local hexagonal units of another adjacent field region (as shown by diagonal region in Figure 2 ). Accordingly, the hexagonal dies corresponding to the local hexagonal units are not completely exposed, which results in significant reduction of wafer utilization and loss.

[0004] Therefore, how to design wafer exposure layout method capable of improving the above problems is a subject worthy of study. SUMMARY

[0005] The present application aims to provide a wafer exposure layout method applied to polygonal dies and capable of improving wafer utilization.

[0006] The wafer exposure layout method of the present application performs step-and-exposure on a wafer with pre-formed multiple polygon dies. To achieve the above object, the wafer exposure layout method of the present application comprises the following steps: planning multiple parallel and equidistant straight exposure paths for the wafer, each straight exposure path comprising multiple rectangular exposure field regions arranged side by side along the straight line, any rectangular exposure field region partially overlaps another adjacent rectangular exposure field region, and each rectangular exposure field region covers a portion of the wafer; providing a mask, the mask comprises a honeycomb structure formed by multiple complete regular hexagonal units, such that each side of the mask forms a concave-convex edge, wherein any complete regular hexagonal unit corresponds to at least one of the multiple polygon dies; and moving the mask along the multiple exposure paths one by one relative to the wafer, and when the mask moves along any exposure path, it moves along the multiple rectangular exposure field regions arranged side by side one by one to expose the wafer; wherein when the mask moves to a first exposure position within any rectangular exposure field region, each side of the mask partially contacts each side of the rectangular exposure field region, and at least one side of the mask partially fits into the corresponding side of the mask moving to a second exposure position within another adjacent rectangular exposure field region.

[0007] In an embodiment of the present application, each side of the mask comprises multiple protrusions and multiple recesses, when the mask moves to a first exposure position within any rectangular exposure field region, the multiple protrusions of at least one side of the mask partially fit into the multiple recesses of the corresponding side of the mask moving to a second exposure position within another adjacent rectangular exposure field region, and the multiple recesses of at least one side of the mask partially fit into the multiple protrusions of the corresponding side of the mask moving to a second exposure position within another adjacent rectangular exposure field region.

[0008] In an embodiment of the present application, any rectangular exposure field region in each exposure path overlaps the partially region extending inward from the adjacent short side of another rectangular exposure field region laterally adjacent.

[0009] In an embodiment of the present application, any rectangular exposure field region in each exposure path overlaps the partially region extending inward from the adjacent long side of another rectangular exposure field region longitudinally adjacent.

[0010] In an embodiment of the present application, any rectangular exposure field region in each exposure path overlaps the partially region extending inward from the angle between the adjacent long side and short side of another rectangular exposure field region diagonally adjacent.

[0011] In an embodiment of the present application, when the mask is correspondingly moved into any rectangular exposure field area, the position of any complete regular hexagonal unit corresponds to the position of at least one of the plurality of polygonal dies.

[0012] In an embodiment of the present application, each complete regular hexagonal unit is composed of a plurality of polygonal sub-units, and when the mask is correspondingly moved into any rectangular exposure field area, the position of any polygonal sub-unit corresponds to the position of one of the plurality of polygonal dies.

[0013] In an embodiment of the present application, each polygonal sub-unit is a regular triangle or a regular trapezoid.

[0014] In an embodiment of the present application, each polygonal die is a regular triangle, a regular trapezoid or a regular hexagon.

[0015] In an embodiment of the present application, the plurality of complete regular hexagonal units form a plurality of groups of rows of complete regular hexagonal units, and any group of rows of complete regular hexagonal units and another group of rows of complete regular hexagonal units adjacent thereto are arranged staggeredly with respect to each other to form a honeycomb structure.

[0016] The present application also includes a mask applied to the wafer exposure layout method as described above. The mask is composed of a plurality of complete regular hexagonal units to form a honeycomb structure, so that each side of the mask forms a concave-convex edge, and any complete regular hexagonal unit corresponds to at least one of the plurality of polygonal dies of the wafer. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 A schematic diagram of a conventional step-and-exposure device performing wafer exposure process.

[0018] Figure 2 A schematic diagram of exposure states of two adjacent field areas when a conventional step-and-exposure device performs wafer exposure process.

[0019] Figure 3 A flowchart of the wafer exposure layout method of the present application.

[0020] Figure 4 A schematic diagram of a plurality of straight exposure paths planned by the wafer exposure layout method of the present application.

[0021] Figure 5 A schematic diagram of a mask used by the wafer exposure layout method of the present application.

[0022] Figure 6 A schematic diagram of a trajectory of the mask of the wafer exposure layout method of the present application along the plurality of exposure paths with respect to the wafer.

[0023] Figure 7Trajectory diagram of a mask for the wafer exposure layout method of the present application in a single rectangular exposure field region.

[0024] Figure 8 Trajectory diagram of a mask for the wafer exposure layout method of the present application between two horizontally adjacent rectangular exposure field regions.

[0025] Figure 9 Trajectory diagram of a mask for the wafer exposure layout method of the present application between two vertically adjacent rectangular exposure field regions.

[0026] Figure 10 Trajectory diagram of a mask for the wafer exposure layout method of the present application between two diagonally adjacent rectangular exposure field regions.

[0027] Figure 11A Schematic diagram of another embodiment of a mask used in the wafer exposure layout method of the present application.

[0028] Figure 11B Schematic diagram of yet another embodiment of a mask used in the wafer exposure layout method of the present application.

[0029] BRIEF DESCRIPTION OF THE DRAWINGS

[0030] 10, 10a, 10b mask

[0031] 11, 11a, 11b complete regular hexagonal unit

[0032] 111, 112 polygonal subunit

[0033] 12 protrusion

[0034] 13 recess

[0035] A11-A92 rectangular exposure field region

[0036] L1-L9 straight-line exposure path

[0037] P1 first exposure position

[0038] P2 second exposure position

[0039] W wafer

[0040] S1-S3 step

[0041] (Conventional technology)

[0042] W wafer

[0043] Y mask

[0044] Z1-Zn field region DETAILED DESCRIPTION

[0045] Since the various schemes and embodiments are only exemplary and non-limiting, after reading this specification, persons with ordinary knowledge can have other schemes and embodiments without departing from the scope of the present application. The features and advantages of the embodiments will be more apparent from the following detailed description and claims.

[0046] In this document, the terms "a" or "an" are used to describe elements and components of the embodiments described herein. This is merely for convenience and to give general reference to the present application. Unless specifically stated to the contrary, this description should be understood as including one or at least one, and the singular as also including the plural.

[0047] In this document, the terms "first", "second", and similar terms are used to distinguish or identify elements or structures, and do not necessarily imply a spatial or chronological sequence. It should be understood that the ordinal numbers can be exchanged in certain situations or configurations without affecting the implementation of the present application.

[0048] In this document, the terms "include", "have", or any other similar terms are intended to cover non-exclusive inclusion. For example, an element or structure containing multiple elements is not limited to the elements listed herein, but can include other elements not explicitly listed but generally inherent to the element or structure.

[0049] The wafer exposure layout method of the present application is mainly applied to a step exposure device to perform step exposure on a wafer with pre-formed polygonal dies. The wafer can be planned with pre-formed polygonal dies according to requirements. In the present application, each polygonal die is a regular triangle, a regular trapezoid, or a regular hexagon, but the present application is not limited thereto. Here, the "regular trapezoid" is defined as an isosceles trapezoid composed of three regular triangles, and the "regular hexagon" is defined as a hexagon composed of six regular triangles or two regular trapezoids. Please refer to Figures 3 to 5 wherein Figure 3 is a flowchart of the wafer exposure layout method of the present application, Figure 4 is a schematic diagram of the plurality of straight-line exposure paths planned by the wafer exposure layout method of the present application, Figure 5 is a schematic diagram of the mask used by the wafer exposure layout method of the present application. As Figure 3 shown, the wafer exposure layout method of the present application includes the following steps:

[0050] Step S1: Plan a plurality of straight-line exposure paths parallel to and equidistant from each other, each straight-line exposure path including a plurality of rectangular exposure field regions arranged side by side along a straight line, any rectangular exposure field region partially overlapping an adjacent other rectangular exposure field region, and each rectangular exposure field region covering a portion of the wafer.

[0051] Because the overall exposure area of ​​the photomask used for exposure is smaller than the overall area of ​​the wafer, when performing step-through exposure on the wafer, the photomask needs to be moved gradually relative to the wafer along a set exposure path so that the movement range of the photomask covers the entire area of ​​the wafer as much as possible. For example... Figure 4 As shown, firstly, this invention plans multiple straight exposure paths L1 to L9 for the wafer W to be exposed, and these straight exposure paths L1 to L9 are parallel to each other and equidistant. In practice, the number and spacing of the multiple straight exposure paths L1 to L9 will change depending on the overall area of ​​the wafer W and the overall area of ​​the photomask 10.

[0052] Each straight exposure path includes multiple rectangular exposure field areas, which are arranged side by side along a straight line and aligned laterally with each other. Figure 4 Taking a straight exposure path L1 as an example, it includes multiple rectangular exposure areas A11 to A12 arranged side-by-side along a straight line and aligned laterally; taking a straight exposure path L2 as an example, it includes multiple rectangular exposure areas A21 to A24 arranged side-by-side along a straight line and aligned laterally; and so on. Multiple rectangular exposure areas located on different straight exposure paths can also be arranged side-by-side along another straight line perpendicular to each of the different straight exposure paths and aligned longitudinally. For example, rectangular exposure areas A21 to A81 are arranged side-by-side along a longitudinal straight line and aligned longitudinally. In reality, the number and area of ​​multiple rectangular exposure areas will vary depending on the overall area of ​​the wafer W and the overall area of ​​the photomask 10.

[0053] Each rectangular exposure area covers a portion of the wafer W, allowing the photomask 10 to expose a localized area of ​​the wafer W when it moves to the target rectangular exposure area. Each rectangular exposure area may include two long sides and two short sides. In this invention, any rectangular exposure area partially overlaps with another adjacent rectangular exposure area. "Adjacent" here is defined as another rectangular exposure area surrounding the perimeter of any target rectangular exposure area and in contact with it (by a point or line). As the relative positions of two adjacent rectangular exposure areas differ (e.g., arranged along the same straight exposure path or along different straight exposure paths), the overlap position of the two adjacent rectangular exposure areas will also differ; for example, two rectangular exposure areas may be laterally adjacent, vertically adjacent, or diagonally adjacent.

[0054] In an embodiment of the present application, any one rectangular exposure field region in each exposure path is overlapped with another rectangular exposure field region in a transversely adjacent exposure path by a partial region extending inward from a long side edge to a short side edge. That is, for two adjacent different exposure paths, a region within a long side edge and a short side edge of any one rectangular exposure field region on one side thereof will cross over a long side edge and a short side edge of another rectangular exposure field region on an opposite side thereof in a transversely adjacent exposure path, and then enter into the other rectangular exposure field region in the transversely adjacent exposure path. For example, the rectangular exposure field region A11 in the straight exposure path L1 and the rectangular exposure field region A21 in the straight exposure path L2 which is transversely adjacent to the rectangular exposure field region A11.

[0055] In an embodiment of the present application, any one rectangular exposure field region in each exposure path is overlapped with another rectangular exposure field region in a longitudinally adjacent exposure path by a partial region extending inward from a long side edge to a short side edge. That is, for two adjacent different exposure paths, a region within a long side edge and a short side edge of any one rectangular exposure field region on one side thereof will cross over a long side edge and a short side edge of another rectangular exposure field region on an opposite side thereof in a longitudinally adjacent exposure path, and then enter into the other rectangular exposure field region in the longitudinally adjacent exposure path. For example, the rectangular exposure field region A11 in the straight exposure path L1 and the rectangular exposure field region A22 in the straight exposure path L2 which is longitudinally adjacent to the rectangular exposure field region A11.

[0056] In an embodiment of the present application, any one rectangular exposure field region in each exposure path is overlapped with another rectangular exposure field region in a diagonally adjacent exposure path by a partial region extending inward from a long side edge and a short side edge. That is, for two adjacent different exposure paths, a region within a long side edge and a short side edge of any one rectangular exposure field region on one side thereof will cross over a long side edge and a short side edge of another rectangular exposure field region on an opposite side thereof in a diagonally adjacent exposure path, and then enter into the other rectangular exposure field region in the diagonally adjacent exposure path. For example, the rectangular exposure field region A11 in the straight exposure path L1 and the rectangular exposure field region A21 in the straight exposure path L2 which is diagonally adjacent to the rectangular exposure field region A11.

[0057] Accordingly, by the plurality of rectangular exposure field regions A11-A92 in the plurality of straight exposure paths L1-L9 being partially overlapped with each other and regularly arranged along the transverse straight lines and the longitudinal straight lines, the wafer W can be substantially tightly covered by the plurality of rectangular exposure field regions A11-A92.

[0058] Step S2: providing a mask, the mask being composed of a plurality of complete regular hexagonal units in a honeycomb structure, such that each side edge of the mask forms a concave-convex edge, wherein each complete regular hexagonal unit corresponds to at least one of the plurality of polygonal dies.

[0059] After the plurality of straight exposure paths are planned in the aforementioned step S1, the present application can then provide a photomask 10 for exposure against the wafer W. As shown in Figure 4 and Figure 5 In the present embodiment, the photomask 10 is formed of a honeycomb structure of a plurality of complete regular hexagonal units 11, that is, the photomask 10 body does not have incomplete regular hexagonal units. The shape and size of each complete regular hexagonal unit 11 conform to the shape and size of a single polygonal die of the wafer, or conform to the overall shape and size after a plurality of polygonal dies are combined. The photomask 10 can completely enter the rectangular exposure field area, and the photomask 10 is formed by the maximum number of complete regular hexagonal units 11 to fill the overall area of the rectangular exposure field area as much as possible.

[0060] In an embodiment of the present application, the plurality of complete regular hexagonal units 11 form a plurality of rows of complete regular hexagonal unit groups, and any row of complete regular hexagonal unit groups is arranged in a staggered manner with another adjacent row of complete regular hexagonal unit groups to form a honeycomb structure. For example, as shown in Figure 5 each row of complete regular hexagonal unit groups is formed by 6 complete regular hexagonal units 11 arranged in a longitudinal direction, and 16 rows of complete regular hexagonal unit groups are arranged in a staggered manner in a transverse direction, so that the overall formed honeycomb structure can be roughly confined within the designed single rectangular exposure field area, but the number of complete regular hexagonal units 11 covered by each row of complete regular hexagonal unit groups and the number of rows of complete regular hexagonal unit groups are not limited by the foregoing, and can be changed according to different structural designs or requirements.

[0061] Accordingly, each side of the photomask 10 (i.e., based on the perspective of the plane facing Figure 5 towards the viewer, except for the two opposite large-area exposure surfaces, the four sides located on the upper side, the lower side, the left side, and the right side of the photomask 10) will form a concave-convex edge due to the structural combination of the plurality of complete regular hexagonal units 11. The concave-convex edge referred to here means that each side of the photomask 10 will form a concave-convex edge profile similar to a jigsaw, and not a single straight flat edge profile.

[0062] Further, each side of the mask 10 forms a plurality of protrusions 12 and a plurality of recesses 13, and the plurality of protrusions 12 and the plurality of recesses 13 of each side are substantially staggered with each other and arranged regularly. Any one of the protrusions 12 or the recesses 13 is a part of a complete regular hexagonal unit 11. In structure, the opposite sides (i.e. the opposite long sides or the opposite short sides) of the mask 10 have protrusions 12 and recesses 13 of the same shape and size, and the shape and size of the protrusions 12 can correspond to the shape and size of the recesses 13; while the adjacent sides (i.e. the long side and the short side adjacent to each other and forming an included angle) of the mask 10 have protrusions 12 and recesses 13 of different shapes and sizes.

[0063] Step S3: moving the mask relative to the wafer along a plurality of exposure paths one by one, and the mask is moved along a plurality of rectangular exposure field regions side by side when moving along any one of the exposure paths.

[0064] After providing the mask 10 in the aforementioned step S2, the mask 10 can be sequentially moved relative to the wafer W along a plurality of exposure paths one by one to expose the wafer W. When the mask 10 is moved along any one of the exposure paths, it is sequentially moved along a plurality of rectangular exposure field regions side by side in the exposure path to perform step-and-exposure.

[0065] Please refer to Figure 4 and Figures 6 to 10 wherein Figure 6 is a schematic diagram of the trajectory of the mask of the wafer exposure layout method of the present application relative to the wafer along a plurality of exposure paths one by one, Figure 7 is a schematic diagram of the trajectory of the mask of the wafer exposure layout method of the present application in a single rectangular exposure field region, Figure 8 is a schematic diagram of the trajectory of the mask of the wafer exposure layout method of the present application between two rectangular exposure field regions adjacent in the lateral direction, Figure 9 is a schematic diagram of the trajectory of the mask of the wafer exposure layout method of the present application between two rectangular exposure field regions adjacent in the longitudinal direction, Figure 10 is a schematic diagram of the trajectory of the mask of the wafer exposure layout method of the present application between two rectangular exposure field regions adjacent in the oblique direction. As Figure 4 and Figure 6As shown, assuming that nine parallel straight exposure paths L1 to L9 are planned for wafer W, and each straight exposure path includes multiple rectangular exposure areas side by side, the photomask 10 will first move along the first straight exposure path L1, from its first rectangular exposure area A11 to the second rectangular exposure area A12 in sequence. Then, along the second straight exposure path L2 adjacent to the first straight exposure path L1, it will move along its first rectangular exposure area A21 to the fourth rectangular exposure area A24 in sequence, and so on, until it moves along the ninth straight exposure path L9 to its second rectangular exposure area A92.

[0066] like Figure 6 and Figure 7 As shown, in this invention, when the photomask 10 is moved to any rectangular exposure area, the position of each complete regular hexagonal unit 11 of the photomask 10 corresponds to the position of at least one of a plurality of polygonal grains. Since the shape and size of each complete regular hexagonal unit 11 conforms to the shape and size of a single polygonal grain or the overall shape and size of a combination of multiple polygonal grains on the wafer W, each complete regular hexagonal unit 11 of the photomask 10 can expose a single polygonal grain or multiple polygonal grains.

[0067] In this invention, when the photomask 10 moves to any rectangular exposure area, because the photomask 10, which is fully inside the rectangular exposure area, has a maximum number of complete regular hexagonal units 11, each side of the photomask 10 will partially contact each side of the rectangular exposure area. For example... Figure 7 As shown, for example, each long side of the photomask 10 will partially contact and overlap with the long side of the rectangular exposure area at the edge of each protrusion 12, and each recess 13 of each long side of the photomask 10 will be formed between the protrusion 12 and the long side of the rectangular exposure area; similarly, each short side of the photomask 10 will partially contact and overlap with the short side of the rectangular exposure area at the endpoint of each protrusion 12, and each recess 13 of each short side of the photomask 10 will be formed between the protrusion 12 and the short side of the rectangular exposure area.

[0068] When the photomask 10 moves along any straight exposure path to an exposure position within any rectangular exposure area, at least one side of the photomask 10 partially engages with the corresponding side of the exposure position within an adjacent rectangular exposure area. For example... Figure 6 and Figure 8As shown, for example, assume that when the reticle 10 is correspondingly moved along the straight exposure path LI into the rectangular exposure field region Al l, the first exposure position Pl of the reticle 10 is defined at this time, and the outer contour of the first exposure position Pl corresponds to the concave-convex edge contour formed by the side edges of the reticle 10. Then, the exposure of the local region of the wafer W can be performed by using the reticle 10 located at the first exposure position Pl. After the exposure at the first exposure position Pl is completed, the reticle 10 will be correspondingly moved along the same straight exposure path LI into the other rectangular exposure field region A12 laterally adjacent to the former, and the second exposure position P2 of the reticle 10 is defined at this time, and the outer contour of the second exposure position P2 also corresponds to the concave-convex edge contour formed by the side edges of the reticle 10.

[0069] In the present embodiment, since the rectangular exposure field region Al l overlaps the rectangular exposure field region A12 laterally adjacent thereto by the local region extending inwardly from the short side and the local region extending inwardly from the opposite short side, and the lateral distance of the aforementioned local regions is equal to the lateral distance of the convex portions 12 and the lateral distance of the concave portions 13 formed by the short side of the reticle 10, the concave-convex edge contour formed by the short side of the reticle 10 located at the first exposure position Pl will partially fit the concave-convex edge contour formed by the corresponding short side of the reticle 10 located at the second exposure position P2. Further, when the reticle 10 is at the first exposure position Pl of the rectangular exposure field region Al l, the convex portions 12 of the short side of the reticle 10 partially fit the concave portions 13 of the corresponding short side of the reticle 10 correspondingly moved into the second exposure position P2 of the rectangular exposure field region A12 laterally adjacent thereto, and the concave portions 13 of the short side of the reticle 10 located at the first exposure position Pl partially fit the convex portions 12 of the corresponding short side of the reticle 10 correspondingly moved into the second exposure position P2 of the rectangular exposure field region A12 laterally adjacent thereto. The same applies to the movement of the reticle 10 along the same straight exposure path between the two rectangular exposure field regions laterally adjacent thereto. Accordingly, when the reticle 10 is stepwise moved along the same straight exposure path, the exposure positions of the two rectangular exposure field regions laterally adjacent thereto can be completely fitted, and the exposure gap can be avoided.

[0070] As shown, for example, assume that when the reticle 10 is correspondingly moved along the straight exposure path LI into the rectangular exposure field region Al l, the first exposure position Pl of the reticle 10 is defined at this time, and the outer contour of the first exposure position Pl corresponds to the concave-convex edge contour formed by the side edges of the reticle 10. Then, the exposure of the local region of the wafer W can be performed by using the reticle 10 located at the first exposure position Pl. After the exposure at the first exposure position Pl is completed, the reticle 10 will be correspondingly moved along the same straight exposure path LI into the other rectangular exposure field region A12 laterally adjacent to the former, and the second exposure position P2 of the reticle 10 is defined at this time, and the outer contour of the second exposure position P2 also corresponds to the concave-convex edge contour formed by the side edges of the reticle 10. Figure 6 and Figure 9As shown, for example, it is also assumed that when the reticle 10 is correspondingly moved into the rectangular exposure field region A11 along the straight line exposure path LI, a first exposure position P1 is defined at this time for the reticle 10, and the outer contour of this first exposure position P1 corresponds to the concave-convex edge contour formed by the side edges of the reticle 10. After the reticle 10 is correspondingly moved into the last rectangular exposure field region A12 on the straight line exposure path LI, the reticle 10 will be successively subjected to step-and-move exposure along another straight line exposure path L2 adjacent to the straight line exposure path LI. When the reticle 10 is correspondingly moved into another rectangular exposure field region A22 longitudinally adjacent to the rectangular exposure field region A11 along the straight line exposure path L2, a second exposure position P2 is defined at this time for the reticle 10, and the outer contour of this second exposure position P2 also corresponds to the concave-convex edge contour formed by the side edges of the reticle 10.

[0071] In the present embodiment, since the rectangular exposure field region A11 overlaps the partial region extending inwardly from the long side edge of the longitudinally adjacent rectangular exposure field region A22 extending inwardly from the opposite long side edge in the other straight line exposure path L2 by the partial region extending inwardly from the long side edge, and the longitudinal width of the aforementioned partial region is equal to the longitudinal distance of each convex portion 12 and the longitudinal distance of each concave portion 13 formed by the long side edge of the reticle 10, the concave-convex edge contour formed by the long side edge of the reticle 10 at the first exposure position P1 will partially fit the concave-convex edge contour formed by the corresponding long side edge of the reticle 10 at the second exposure position P2. Further, when the reticle 10 is at the first exposure position P1 in the rectangular exposure field region A11, the plurality of convex portions 12 of the long side edge of the reticle 10 partially fit the plurality of concave portions 13 of the corresponding long side edge of the reticle 10 correspondingly moved into the second exposure position P2 in the longitudinally adjacent rectangular exposure field region A22, and the plurality of concave portions 13 of the long side edge of the reticle 10 at the first exposure position P1 partially fit the plurality of convex portions 12 of the corresponding long side edge of the reticle 10 correspondingly moved into the second exposure position P2 in the longitudinally adjacent rectangular exposure field region A22. The same applies to the movement and exposure operation of the reticle 10 between the two longitudinally adjacent rectangular exposure field regions formed by the reticle 10 along the two longitudinally adjacent straight line exposure paths. Accordingly, during the step-and-move exposure process of the reticle 10 along the two longitudinally adjacent straight line exposure paths, the exposure positions of the two longitudinally adjacent rectangular exposure field regions can be ensured to be completely fitted, and the generation of exposure gaps can be avoided.

[0072] As shown, for example, it is also assumed that when the reticle 10 is correspondingly moved into the rectangular exposure field region A11 along the straight line exposure path LI, a first exposure position P1 is defined at this time for the reticle 10, and the outer contour of this first exposure position P1 corresponds to the concave-convex edge contour formed by the side edges of the reticle 10. After the reticle 10 is correspondingly moved into the last rectangular exposure field region A12 on the straight line exposure path LI, the reticle 10 will be successively subjected to step-and-move exposure along another straight line exposure path L2 adjacent to the straight line exposure path LI. When the reticle 10 is correspondingly moved into another rectangular exposure field region A22 longitudinally adjacent to the rectangular exposure field region A11 along the straight line exposure path L2, a second exposure position P2 is defined at this time for the reticle 10, and the outer contour of this second exposure position P2 also corresponds to the concave-convex edge contour formed by the side edges of the reticle 10. Figure 6 and Figure 10As shown, for example, it is also assumed that when the reticle 10 is correspondingly moved along the straight exposure path LI into the rectangular exposure field region Al l, a first exposure position Pl of the reticle 10 is defined at this time, and the outer contour of the first exposure position Pl corresponds to the concave-convex edge contour formed by the respective side edges of the reticle 10. After the reticle 10 is correspondingly moved into the last rectangular exposure field region A12 on the straight exposure path LI, the reticle 10 is successively subjected to step-and-move exposure along another straight exposure path L2 adjacent to the straight exposure path LI. When the reticle 10 is correspondingly moved along the straight exposure path L2 into another rectangular exposure field region A21 diagonally adjacent thereto, a second exposure position P2 of the reticle 10 is defined at this time, and the outer contour of the second exposure position P2 also corresponds to the concave-convex edge contour formed by the respective side edges of the reticle 10.

[0073] In the present embodiment, since the rectangular exposure field region Al l overlaps, with the partial region extending inward from the included angle of the long side edge and the short side edge, the partial region extending inward from the included angle of the opposite long side edge and the short side edge of the diagonally adjacent rectangular exposure field region A21 in the other straight exposure path L2, and the transverse distance of the aforementioned partial region is equal to the transverse distance of each convex portion 12 and the transverse distance of each concave portion 13 formed by the short side edge of the reticle 10, and the longitudinal width of the aforementioned partial region is equal to the longitudinal distance of each convex portion 12 and the longitudinal distance of each concave portion 13 formed by the long side edge of the reticle 10, the edge contour formed by the included angle of the long side edge and the short side edge of the reticle 10 at the first exposure position Pl is partially fitted with the edge contour formed by the corresponding included angle of the long side edge and the short side edge of the reticle 10 at the second exposure position P2. Further, when the reticle 10 is at the first exposure position Pl of the rectangular exposure field region Al l, the partial concave portion 13 of the included angle of the long side edge and the short side edge of the reticle 10 is fitted with the partial convex portion 12 of the corresponding included angle of the long side edge and the short side edge of the reticle 10 correspondingly moved into the second exposure position P2 of the diagonally adjacent rectangular exposure field region A21. The same applies to the subsequent movement and exposure operation of the reticle 10 between the diagonally adjacent two rectangular exposure field regions formed by the reticle 10 along the two adjacent straight exposure paths. Accordingly, during the step-and-move exposure process of the reticle 10 along the two adjacent straight exposure paths, the exposure positions of the diagonally adjacent two rectangular exposure field regions can be completely fitted, and the exposure gap can be avoided.

[0074] Accordingly, the wafer exposure layout method of the present application is capable of maximizing the utilization of the wafer by using a mask with a special structure design and a plurality of rectangular exposure field regions arranged in a straight line and partially overlapped with each other, and allowing the mask and the wafer to move relatively in a step-by-step manner according to a plurality of straight exposure paths, so that the exposure position of the mask in the adjacent two rectangular exposure field regions can be completely fitted, thereby maximizing the utilization of the wafer. Compared with the conventional step-by-step exposure equipment, the wafer exposure layout method of the present application can avoid layout errors caused by the movement of the mask between the adjacent two rectangular exposure field regions, so that the number of incomplete exposure dies is increased, and the utilization of the wafer is lost.

[0075] Referring to Figure 5 , the present application also includes a mask 10 applied to the wafer exposure layout method as described above. The mask 10 is composed of a plurality of complete regular hexagonal units 11 to form a honeycomb structure, so that each side of the mask 10 forms a concave-convex edge, wherein any complete regular hexagonal unit 11 corresponds to at least one of a plurality of polygon dies. The plurality of complete regular hexagonal units 11 form a plurality of rows of complete regular hexagonal unit groups arranged longitudinally, and any row of complete regular hexagonal unit groups is arranged offset from another adjacent row of complete regular hexagonal unit groups to form a honeycomb structure.

[0076] Referring to Figure 11A and Figure 11B , wherein Figure 11A is a schematic view of another embodiment of the mask applied to the present application, Figure 11B is a schematic view of still another embodiment of the mask applied to the present application. As Figure 11A and Figure 11B shown, in other embodiments of the mask of the present application, in order to cope with different shapes and sizes of a plurality of polygon dies pre-formed on the wafer, each complete regular hexagonal unit can be designed to be composed of a plurality of polygon sub-units. The shape and size of each polygon sub-unit conform to the shape and size of a single polygon die on the wafer.

[0077] For example, Figure 11A , each complete regular hexagonal unit 11a of the mask 10a is composed of two polygon sub-units 111, each polygon sub-unit 111 is a regular trapezoid, and each polygon sub-unit 111 corresponds to a single regular trapezoidal die. When the mask moves into any rectangular exposure field region, the position of each polygon sub-unit 111 corresponds to the position of a single regular trapezoidal die.

[0078] For example, Figure 11BFor example, each complete regular hexagonal unit 11b of the mask 10b is composed of 6 polygonal sub-units 112, each of which is a regular triangle, and each of which corresponds to a single regular triangle crystal grain. When the mask is correspondingly moved into any rectangular exposure field region, the position of each polygonal sub-unit 112 corresponds to the position of a single regular triangle crystal grain.

[0079] The foregoing description is only exemplary of the application and intended to be illustrative of the present application and not limiting of the application or the application of the principles of the application. Moreover, although the application has been described in some detail with respect to one or more specific embodiments, it will be apparent that various modifications and changes can be made without departing from the scope of the present application as set forth in the claims. For example, features of one embodiment can be interchanged with features of another embodiment. It is therefore the intention that the application not be limited to the described embodiments, but that the application be defined by the claims.

Claims

1. A wafer exposure layout method for performing step-and-exposure on a wafer pre-formed with a plurality of polygonal dies, the wafer exposure layout method comprising the steps of: planning a plurality of straight exposure paths parallel and equidistant to each other for the wafer, each of the straight exposure paths comprising a plurality of rectangular exposure field regions side by side along a straight line, any of the rectangular exposure field regions partially overlapping another of the rectangular exposure field regions adjacent thereto, and each of the rectangular exposure field regions covering a portion of the wafer; providing a mask consisting of a plurality of complete regular hexagonal units forming a honeycomb structure such that each side of the mask forms a convex-concave edge, wherein any of the complete regular hexagonal units corresponds to at least one of the plurality of polygonal dies; moving the mask along the plurality of exposure paths one by one with respect to the wafer, and the mask is moved along the plurality of rectangular exposure field regions side by side when the mask is moved along any of the exposure paths to expose the wafer; wherein when the mask is correspondingly moved to a first exposure position within any of the rectangular exposure field regions, each of the sides of the mask partially contacts each of the sides of the rectangular exposure field region, and at least one of the sides of the mask partially fits into a corresponding side of the mask correspondingly moved to a second exposure position within another of the rectangular exposure field regions adjacent thereto.

2. The wafer exposure layout method of claim 1, wherein each of the sides of the mask comprises a plurality of convex portions and a plurality of concave portions, when the mask is correspondingly moved to the first exposure position within any of the rectangular exposure field regions, the plurality of convex portions of at least one of the sides of the mask partially fits into the plurality of concave portions of the corresponding side of the mask correspondingly moved to the second exposure position within another of the rectangular exposure field regions adjacent thereto, and the plurality of concave portions of at least one of the sides of the mask partially fits into the plurality of convex portions of the corresponding side of the mask correspondingly moved to the second exposure position within another of the rectangular exposure field regions adjacent thereto.

3. The wafer exposure layout method of claim 1, wherein any of the rectangular exposure field regions in each of the exposure paths is partially overlapped with another of the rectangular exposure field regions transversely adjacent thereto from a partial region extending inwardly from a short side to a partial region extending inwardly from an opposite short side.

4. The wafer exposure layout method of claim 1, wherein any of the rectangular exposure field regions in each of the exposure paths is partially overlapped with another of the rectangular exposure field regions longitudinally adjacent thereto from a partial region extending inwardly from a long side to a partial region extending inwardly from an opposite long side.

5. The wafer exposure layout method of claim 1, wherein any of the rectangular exposure field regions in each of the exposure paths is partially overlapped with another of the rectangular exposure field regions diagonally adjacent thereto from a partial region extending inwardly from an angle between a long side and a short side to a partial region extending inwardly from an angle between an opposite long side and an opposite short side.

6. The wafer exposure layout method of claim 1, wherein when the mask is correspondingly moved to any of the rectangular exposure field regions, a position of any of the complete regular hexagonal units corresponds to a position of at least one of the plurality of polygonal dies. ​ 7. The wafer exposure layout method of claim 1, wherein each of the complete regular hexagonal units is composed of a plurality of polygonal sub-units, and when the mask is correspondingly moved to any of the rectangular exposure field regions, a position of any of the polygonal sub-units corresponds to a position of one of the plurality of polygonal dies.

8. The wafer exposure layout method of claim 7, wherein each of the polygonal sub-units is a regular triangle or a regular trapezoid.

9. The wafer exposure layout method of claim 1, wherein each of the polygonal dies is a regular triangle, a regular trapezoid, or a regular hexagon.

10. The wafer exposure layout method of claim 1, wherein the plurality of complete regular hexagonal units forms a plurality of groups of rows of complete regular hexagonal units, and any group of rows of complete regular hexagonal units and an adjacent group of rows of complete regular hexagonal units are arranged offset from each other to form the honeycomb structure.

11. A mask for use in the wafer exposure layout method of any one of claims 1-10, the mask being composed of a plurality of complete regular hexagonal units in a honeycomb structure such that each side of the mask forms a concave-convex edge, wherein each of the complete regular hexagonal units corresponds to at least one of the plurality of polygonal dies of the wafer.

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