Wafer heating device applied to semiconductor industry

Abstract

The invention belongs to the technical field of wafer processing, and particularly discloses a wafer heating device applied to the semiconductor industry, which comprises a liner tube spacer bush branch pipe, the upper end of the liner tube spacer bush branch pipe is inserted with a heater base through a sliding assembly; a cooling bottom plate, a ceramic insulation plate and a silica quartz heat insulation brick are sequentially and fixedly inserted into the heater base from bottom to top, a heating element is fixedly connected to the upper end of the silica quartz heat insulation brick, the heating element is in a spiral winding shape, and a quartz protection cover is arranged above the heating element through a connecting assembly; the upper end of the quartz protection cover is fixedly connected with a silicon carbide heating top plate, and the upper end of the silicon carbide heating top plate is fixedly connected with a silicon carbide cover ring. The silicon carbide heating device can provide a good heating platform for a wafer during wafer processing, the heating process is very stable and very uniform, and the processing quality of the wafer is improved.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of wafer processing, and particularly discloses a wafer heating device applied to the semiconductor industry. BACKGROUND

[0002] In the semiconductor industry, wafer manufacturing processing is a very complex manufacturing process, which utilizes many technologies to manufacture integrated circuit (IC) chips, and the heating capacity and temperature level are determined as one of the main energy sources for generating chemical reactions in the processing reaction system in the ATM or vacuum environment, and the main function of the heating energy is to decompose and desorb the process gas from the molecular level to the gaseous atomic level in sequence to achieve the required chemical reaction and re-form new materials and adsorb on the silicon substrate surface, and the required temperature range can be as low as 1800'C from room temperature to as high as 1800'C according to different reaction processes, and the heating energy reaction process is mainly applied to the chemical vapor deposition process (CVD), and in the current industry, most of the temperature heating for process application is the average value of the resistance heater between 100'C and 550'C, and with the continuous progress of semiconductor technology, especially the third generation and III-V combined material devices, due to the need to form the required thin film coating by the deposition reaction, the temperature heating requirement is higher and higher, and the temperature range required by the third generation and III-V process is determined as 600'C to 1800'C, and due to such a high requirement, the old conventional heating method can no longer support the processing requirements, and therefore, a new heat energy generation method needs to be adopted to fill this need. SUMMARY

[0003] Therefore, the application is proposed to solve the problems in the background art, and provides a wafer heating device applied to the semiconductor industry.

[0004] To achieve the above purpose, the application provides a wafer heating device applied to the semiconductor industry, which comprises a liner sleeve support pipe, a heater base is inserted through a sliding assembly at the upper end of the liner sleeve support pipe, a cooling bottom plate, a ceramic insulation plate and a silicon quartz heat insulation brick are sequentially fixed and inserted in the inside of the heater base from bottom to top, a heating element is fixedly connected to the upper end of the silicon quartz heat insulation brick, the shape of the heating element is spiral winding, a quartz protective cover is arranged above the heating element through a connecting assembly, a silicon carbide heating top plate is fixedly connected to the upper end of the quartz protective cover, a silicon carbide cover ring is fixedly connected to the upper end of the silicon carbide heating top plate, a gap is left between the silicon carbide heating top plate and the heater base, a temperature measuring assembly and a water injection assembly are arranged in the inside of the liner sleeve support pipe, and a reinforcing assembly is arranged at the lower end of the liner sleeve support pipe.

[0005] Preferably, the sliding assembly comprises a stainless steel bellows, a ceramic support pad and a guide groove, the stainless steel bellows is sleeved on the outer wall of the liner hanger branch pipe, the upper end of the stainless steel bellows is fixedly connected with the lower end surface of the heater base, the lower end of the stainless steel bellows is fixedly connected with a connecting ring, the lower end of the connecting ring is fixedly connected with a support sleeve, the connecting ring and the support sleeve are fixedly connected on the outer wall of the liner hanger branch pipe, the ceramic support pad is fixedly connected on the lower end of the cooling bottom plate, the outer wall of the ceramic support pad is in sliding fit with the inner wall of the liner hanger branch pipe, and the guide groove is arranged at the center of the lower end of the heater base.

[0006] Preferably, the connecting assembly comprises a plurality of support protrusions, the plurality of support protrusions are fixedly connected on the outer wall of the quartz protective cover around the central annular array of the quartz protective cover, the outer wall of each of the plurality of support protrusions extends a clamping protrusion, the outer wall of the lower part of each of the plurality of support protrusions and the lower end of the clamping protrusion are fixedly connected with the inner wall and the upper end surface of the heater base, respectively, an arc-shaped filter screen is fixedly connected between any two adjacent support protrusions, and the arc-shaped filter screen is located inside the gap.

[0007] Preferably, the reinforcing assembly comprises a connecting bottom cover and a T-shaped support, the connecting bottom cover is fixedly connected with the lower end of the liner hanger branch pipe, the lower end surface of the connecting bottom cover is in abutment with the upper end surface of the T-shaped support, and a fastening assembly is arranged between the connecting bottom cover and the T-shaped support.

[0008] Preferably, the fastening assembly comprises two fastening bolts, the two fastening bolts are symmetrically arranged, the fastening bolts are in common penetration and screwing on the inner walls of the connecting bottom cover and the T-shaped support, and the outer wall of the fastening bolt is threadedly sleeved with a fastening nut near the bottom.

[0009] Preferably, the temperature measuring assembly comprises a thermocouple body and a thermocouple working end connected with the thermocouple body, the thermocouple working end penetrates in sequence to the limiting connecting disc, the T-shaped support, the connecting bottom cover, the ceramic support pad, the cooling bottom plate, the ceramic insulating plate and the heating element, the upper end of the thermocouple working end is fixedly connected with the inner top end of the quartz protective cover, a positioning disc is fixedly sleeved on the outer surface of the thermocouple working end near the bottom edge, the limiting connecting disc is located below the positioning disc, and two limiting connecting rods are fixedly connected between the upper end of the limiting connecting disc and the lower end of the T-shaped support.

[0010] Preferably, the water injection assembly comprises a water delivery pipe, the water delivery pipe is fixedly penetrated on the outer wall of the liner hanger branch pipe, and the end of the water delivery pipe is fixedly connected with a connecting pipe, the connecting pipe is close to the thermocouple working end.

[0011] Preferably, the inside of the heater base is provided with a placing groove, the cooling bottom plate, the ceramic insulating plate, the silica quartz heat insulation brick, the heating element and the quartz protective cover are located in the inside of the placing groove, the outer wall of the cooling bottom plate, the ceramic insulating plate and the silica quartz heat insulation brick is fixedly connected with the inner wall of the placing groove, and the radius of the quartz protective cover is smaller than the radius of the placing groove.

[0012] Compared with the prior art, the application has the following beneficial effects: by arranging the liner sleeve support pipe, the sliding assembly, the heater base, the cooling bottom plate, the ceramic insulating plate, the silica quartz heat insulation brick, the heating element, the connecting assembly, the quartz protective cover, the silicon carbide heating top plate, the silicon carbide cover ring, the gap, the temperature measuring assembly, the water injection assembly and the reinforcing assembly, an ultra-high heating capacity is designed and produced by using a method that has never been used before to meet the requirements of the semiconductor industry, the heating element is mainly composed of special alloy nickel and chromate base material, and the heating element is in a spiral winding shape, which can provide the most uniform heat distribution, the heating element is arranged on the silica quartz heat insulation brick and protected by the quartz protective cover to prevent the pollution of the environment in the processing cavity caused by the falling micro-particles from the brick, the design of the cooling bottom plate and the water injection assembly is beneficial to cooling the heater base, a gas distribution gap is left between the heating element and the silicon carbide heating top plate, and the heat-conducting gas can provide more effective and uniform heat transfer when passing through the heating element, the whole heater base can move up and down in the wafer processing process through the sliding assembly, and temperature measurement, monitoring and feedback can be provided through the temperature measuring assembly. BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1 It is a schematic diagram of the overall structure of the application;

[0014] Figure 2 It is a partial sectional view of the application;

[0015] Figure 3 It is a schematic diagram of the structure at A in Figure 2 ;

[0016] Figure 4 It is a schematic diagram of the structure at B in Figure 2 ;

[0017] Figure 5 It is an exploded view of the application;

[0018] Figure 6 It is a schematic diagram of the structure at C in Figure 5 ;

[0019] Figure 7 It is a bottom view of the application;

[0020] Figure 8 It is a flowchart of the application.

[0021] In the figure: 1, thermocouple body; 2, T-shaped support; 3, water delivery pipe; 4, connecting bottom cover; 5, silicon carbide cover ring; 6, connecting ring; 7, liner sleeve support pipe; 8, heater base; 9, silicon carbide heating top plate; 10, thermocouple working end; 11, heating element; 12, quartz protective cover; 13, silica heat insulation brick; 14, ceramic insulating plate; 15, cooling bottom plate; 16, guide groove; 17, ceramic support cushion block; 18, stainless steel bellows; 19, fastening bolt; 20, fastening nut; 21, limiting connecting rod; 22, limiting connecting disc; 23, positioning disc; 24, connecting pipe; 25, arc-shaped filter screen; 26, clamping protrusion; 27, supporting protrusion; 28, mounting groove; 29, supporting sleeve; 30, gap. DETAILED DESCRIPTION

[0022] In order to enable a more clear understanding of the above-mentioned objects, features and advantages of the present application, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0023] In the following description, a large number of specific details are set forth in order to facilitate a thorough understanding of the present application, however, the present application can also be implemented in other ways different from those described herein, and therefore, the present application is not limited to the specific embodiments disclosed below.

[0024] As Figures 1-8 shown in a wafer heating device applied to the semiconductor industry, the upper end of the liner sleeve support pipe 7 is inserted with the heater base 8 through the sliding assembly, the inside of the heater base 8 is sequentially fixed with the cooling bottom plate 15, the ceramic insulating plate 14 and the silica heat insulation brick 13 from bottom to top, the upper end of the silica heat insulation brick 13 is fixedly connected with the heating element 11, the shape of the heating element 11 is spiral winding, and the upper side of the heating element 11 is provided with the quartz protective cover 12 through the connecting assembly, the upper end of the quartz protective cover 12 is fixedly connected with the silicon carbide heating top plate 9, the upper end of the silicon carbide heating top plate 9 is fixedly connected with the silicon carbide cover ring 5, the gap 30 is left between the silicon carbide heating top plate 9 and the heater base 8, the inside of the liner sleeve support pipe 7 is respectively provided with the temperature measuring assembly and the water injection assembly, and the lower end of the liner sleeve support pipe 7 is provided with the reinforcing assembly, the heating element 11 is mainly composed of alloy nickel and chromate, high-thermal-conductivity gas can be selected as effective heat transfer medium, such as argon, hydrogen, nitrogen or helium, which can be filled into the gap 30 between the silicon carbide heating top plate 9 and the heater base 8 and contacted with the heating element 11.

[0025] The sliding assembly comprises a stainless steel bellows 18, a ceramic supporting pad 17 and a guide groove 16, the stainless steel bellows 18 is sleeved on the outer wall of the liner isolation sleeve branch pipe 7, the upper end of the stainless steel bellows 18 is fixedly connected with the lower end surface of the heater base 8, and the lower end of the stainless steel bellows 18 is fixedly connected with the connecting ring 6, the lower end of the connecting ring 6 is fixedly connected with the supporting sleeve 29, and the connecting ring 6 and the supporting sleeve 29 are fixedly connected on the outer wall of the liner isolation sleeve branch pipe 7, the ceramic supporting pad 17 is fixedly connected at the lower end of the cooling bottom plate 15, and the outer wall of the ceramic supporting pad 17 is in sliding fit with the inner wall of the liner isolation sleeve branch pipe 7, the guide groove 16 is arranged at the center of the lower end of the heater base 8, and the inner wall of the guide groove 16 close to the bottom is in abutment with the outer wall of the liner isolation sleeve branch pipe 7, by arranging the stainless steel bellows 18, the ceramic supporting pad 17 and the guide groove 16, the heater base 8 can slide up and down on the top of the liner isolation sleeve branch pipe 7 by a small distance, and the wafer can move up and down during processing.

[0026] The connecting assembly comprises a plurality of supporting protrusions 27, the plurality of supporting protrusions 27 are fixedly connected on the outer wall of the quartz protection cover 12 in a ring-shaped array around the center of the quartz protection cover 12, the outer wall of each of the supporting protrusions 27 is extended with a clamping protrusion 26, the outer wall of the lower part of the supporting protrusion 27 and the outer wall of the lower end of the clamping protrusion 26 are fixedly connected with the inner wall and the upper end surface of the heater base 8 respectively, an arc-shaped filter screen 25 is fixedly connected between any two adjacent supporting protrusions 27, and the arc-shaped filter screen 25 is located inside the gap 30, by arranging the supporting protrusion 27, the clamping protrusion 26 and the arc-shaped filter screen 25, firstly, the arrangement of the supporting protrusion 27 and the clamping protrusion 26 can facilitate the connection between the quartz protection cover 12 and the heater base 8, and secondly, there is a gap between the quartz protection cover 12 and the heater base 8, the protective gas flowing along the gap 30 can pass between the quartz protection cover 12 and the heater base 8 and contact the heating element 11, so that the heating effect is better.

[0027] The reinforcing assembly comprises a connecting bottom cover 4 and a T-shaped support 2, the connecting bottom cover 4 is fixedly connected at the lower end of the liner isolation sleeve branch pipe 7, the lower end surface of the connecting bottom cover 4 is in abutment with the upper end surface of the T-shaped support 2, and a fastening assembly is arranged between the connecting bottom cover 4 and the T-shaped support 2, by arranging the connecting bottom cover 4 and the T-shaped support 2, the liner isolation sleeve branch pipe 7 can be stabilized.

[0028] The fastening assembly comprises two fastening bolts 19, the two fastening bolts 19 are symmetrically arranged, the fastening bolts 19 are in common penetration and screwing on the inner walls of the connecting bottom cover 4 and the T-shaped support 2, and the outer wall of the fastening bolt 19 close to the bottom is threadedly sleeved with a fastening nut 20, by arranging the fastening bolt 19 and the fastening nut 20, the connecting bottom cover 4 and the T-shaped support 2 can be connected, and the T-shaped support 2 can be disassembled by rotating out the fastening nut 20.

[0029] The temperature measuring assembly comprises a thermocouple body 1 and a thermocouple working end 10 connected to the thermocouple body 1, the thermocouple working end 10 penetrates through a limiting connecting disc 22, a T-shaped support 2, a connecting bottom cover 4, a ceramic supporting pad 17, a cooling bottom plate 15, a ceramic insulating plate 14 and a heating element 11 in sequence, and the upper end of the thermocouple working end 10 is fixedly connected to the inner top end of a quartz protective cover 12, a positioning disc 23 is fixedly sleeved on the outer surface of the thermocouple working end 10 close to the bottom edge, the limiting connecting disc 22 is located below the positioning disc 23, and two limiting connecting rods 21 are fixedly connected between the upper end of the limiting connecting disc 22 and the lower end of the T-shaped support 2 on both sides, by arranging the thermocouple body 1, the thermocouple working end 10, the limiting connecting disc 22, the limiting connecting rod 21 and the positioning disc 23, the thermocouple working end 10 on the thermocouple body 1 can measure the temperature during wafer processing, which is convenient for temperature control, the limiting connecting disc 22, the limiting connecting rod 21 and the positioning disc 23 can support the thermocouple body 1, and the thermocouple body 1 can move up and down together with the heater base 8.

[0030] The water injection assembly comprises a water delivery pipe 3, the water delivery pipe 3 is fixedly penetrated through the outer wall of the liner sleeve support pipe 7, and the end of the water delivery pipe 3 is fixedly connected with a connecting pipe 24, the connecting pipe 24 is close to the thermocouple working end 10, by arranging the water delivery pipe 3 and the connecting pipe 24, the water source can be injected into the liner sleeve support pipe 7, so that the liner sleeve support pipe 7 maintains a vacuum state.

[0031] The heater base 8 is internally provided with a mounting groove 28, the cooling bottom plate 15, the ceramic insulating plate 14, the silica quartz heat insulation brick 13, the heating element 11 and the quartz protective cover 12 are located in the mounting groove 28, the outer walls of the cooling bottom plate 15, the ceramic insulating plate 14 and the silica quartz heat insulation brick 13 are fixedly connected with the inner wall of the mounting groove 28, the radius of the quartz protective cover 12 is smaller than the radius of the mounting groove 28, by arranging the mounting groove 28, the cooling bottom plate 15, the ceramic insulating plate 14, the silica quartz heat insulation brick 13, the heating element 11 and the quartz protective cover 12 can be installed in the heater base 8.

[0032] Working principle: the infrared high temperature heater of the present application is firstly put into the process vacuum chamber, the temperature monitoring thermocouple, called "TC", has been connected to provide temperature feedback to the system CPU software controller module, then the required temperature setting of the system software is compared with the actual temperature of the heating element 11, the system will provide a correction analog signal and send to the high temperature heater drive module, the specially designed high temperature heater drive module will adjust the power output according to the analog signal received from the system controller, which will form a closed loop control of the heating element 11 temperature, the inlet gas from the system process gas supply cabinet is supplied to the heating element 11 as a heat conduction element, which improves the uniformity of the top temperature, and a kind of super high heating capacity is designed and produced by a method that has never been used before to meet the requirements of the semiconductor industry, the heating element 11 is mainly composed of special alloy nickel and chromate substrate, and the heating element 11 is spirally coiled, which can provide the most uniform heat distribution, the heating element 11 is placed on the silica heat insulation brick 13 and protected by the quartz protective cover 12 to prevent the micro-particles falling from the brick from polluting the environment in the processing cavity, the design of the cooling bottom plate 15 and the water injection assembly will benefit the cooling of the heater base 8, the gas distribution gap 30 is left between the heating element 11 and the silicon carbide heating top plate 9, and the heat-conducting gas can provide more effective and uniform heat transfer when passing through the heating element 11, through the sliding assembly, the whole heater base 8 can move up and down during the wafer processing process, and through the temperature measuring assembly, temperature measurement, monitoring and feedback can be conveniently provided.

[0033] In the present application, the terms "mounting", "connecting", "connecting", "fixing" and the like should be understood broadly, for example, "connecting" can be fixed connection, or detachable connection, or integral connection; it can be directly connected, or indirectly connected through intermediate medium. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0034] In the description of the present application, if the terms "one embodiment", "some embodiments", "specific embodiments" and the like are described, it means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present application, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0035] The above shows and describes the basic principles, main features and advantages of the present application. Those skilled in the art should understand that the present application is not limited to the above-mentioned embodiments, and the above-mentioned embodiments and descriptions in the specification are only the principles of the present application. Various changes and improvements can be made without departing from the spirit and scope of the present application, and these changes and improvements all fall within the scope of the claimed present application. The scope of protection of the present application is defined by the appended claims and their equivalents.

Claims

1. A wafer heating device applied to the semiconductor industry, comprising a bushing spacer support pipe (7), characterized in that: The upper end of the liner bushing branch pipe (7) is inserted through a sliding assembly with a heater base (8), the inside of the heater base (8) is sequentially fixed with a cooling bottom plate (15), a ceramic insulation plate (14) and a silica quartz heat insulation brick (13) from bottom to top, the upper end of the silica quartz heat insulation brick (13) is fixedly connected with a heating element (11), the heating element (11) is in the shape of a spiral winding, a quartz protective cover (12) is arranged above the heating element (11) through a connecting assembly, the upper end of the quartz protective cover (12) is fixedly connected with a silicon carbide heating top plate (9), the upper end of the silicon carbide heating top plate (9) is fixedly connected with a silicon carbide cover ring (5), a gap (30) is left between the silicon carbide heating top plate (9) and the heater base (8), the inside of the liner bushing branch pipe (7) is respectively provided with a temperature measuring assembly and a water injection assembly, and the lower end of the liner bushing branch pipe (7) is provided with a reinforcing assembly.

2. The wafer heating device for semiconductor industry as claimed in claim 1 wherein: The sliding assembly comprises a stainless steel bellows (18), a ceramic support pad (17) and a guide groove (16), the stainless steel bellows (18) is slidably sleeved on the outer wall of the liner bushing branch pipe (7), the upper end of the stainless steel bellows (18) is fixedly connected with the lower end face of the heater base (8), the lower end of the stainless steel bellows (18) is fixedly connected with a connecting ring (6), the lower end of the connecting ring (6) is fixedly connected with a support sleeve (29), the connecting ring (6) and the support sleeve (29) are fixedly connected on the outer wall of the liner bushing branch pipe (7), the ceramic support pad (17) is fixedly connected at the lower end of the cooling bottom plate (15), the outer wall of the ceramic support pad (17) is in sliding fit with the inner wall of the liner bushing branch pipe (7), and the guide groove (16) is arranged at the center of the lower end of the heater base (8), and the inner wall of the guide groove (16) is close to the bottom and is in fit with the outer wall of the liner bushing branch pipe (7).

3. The wafer heating device for semiconductor industry as claimed in claim 1 wherein: The connecting assembly comprises a plurality of support protrusions (27), the plurality of support protrusions (27) are fixedly connected on the outer wall of the quartz protective cover (12) in an annular array around the center of the quartz protective cover (12), the outer wall of each of the plurality of support protrusions (27) is extended with a clamping protrusion (26) at the upper portion, the outer wall of the lower portion of each of the support protrusions (27) and the lower end of the clamping protrusion (26) are fixedly connected with the inner wall and the upper end face of the heater base (8) respectively, an arc-shaped filter screen (25) is fixedly connected between two adjacent support protrusions (27), and the arc-shaped filter screen (25) is located inside the gap (30).

4. The wafer heating device for semiconductor industry as claimed in claim 1 wherein: The reinforcing assembly comprises a connecting bottom cover (4) and a T-shaped support (2), the connecting bottom cover (4) is fixedly connected at the lower end of the liner bushing branch pipe (7), the lower end face of the connecting bottom cover (4) is in fit with the upper end face of the T-shaped support (2), and a fastening assembly is arranged between the connecting bottom cover (4) and the T-shaped support (2).

5. The wafer heating device for semiconductor industry as claimed in claim 4 wherein: The fastening assembly comprises two fastening bolts (19) symmetrically arranged between each other, which are screwed through the inner wall of the connecting bottom cover (4) and the T-shaped support (2) and the outer wall of the fastening bolt (19) is close to the bottom threaded sleeve and is sleeved with a fastening nut (20).

6. The wafer heating device for semiconductor industry as claimed in claim 4 wherein: The temperature measuring assembly comprises a thermocouple body (1) and a thermocouple working end (10) connected to the thermocouple body (1), which is sequentially penetrated through the limiting connecting disc (22), the T-shaped support (2), the connecting bottom cover (4), the ceramic supporting pad (17), the cooling bottom plate (15), the ceramic insulation plate (14) and the heating element (11), and the upper end of the thermocouple working end (10) is fixedly connected with the inner top end of the quartz protective cover (12), the outer surface of the thermocouple working end (10) is fixedly sleeved with a positioning disc (23) close to the bottom edge, the limiting connecting disc (22) is located below the positioning disc (23), and two limiting connecting rods (21) are fixedly connected between the upper end of the limiting connecting disc (22) and the lower end of the T-shaped support (2).

7. The wafer heating device for semiconductor industry as claimed in claim 6 wherein: The water injection assembly comprises a water delivery pipe (3) fixedly penetrated through the outer wall of the liner sleeve support pipe (7), and the end of the water delivery pipe (3) is fixedly connected with a connecting pipe (24) close to the thermocouple working end (10).

8. The wafer heating device for semiconductor industry as claimed in claim 1 wherein: The inside of the heater base (8) is provided with a mounting groove (28), and the cooling bottom plate (15), the ceramic insulation plate (14), the silica heat insulation brick (13), the heating element (11) and the quartz protective cover (12) are located in the inside of the mounting groove (28), the outer wall of the cooling bottom plate (15), the ceramic insulation plate (14) and the silica heat insulation brick (13) is fixedly connected with the inner wall of the mounting groove (28), and the radius of the quartz protective cover (12) is smaller than the radius of the mounting groove (28).

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