Component for plasma processing apparatus and method for manufacturing component

Abstract

A member for a plasma processing apparatus includes a base material and a thermal spray film on a surface of the base material. The surface of the base material is provided with a main surface and a recess that is recessed with respect to the main surface of the base material at a position overlapping a terminal portion of the thermal spray film. The thermal spray film has a first thermal spray film and a second thermal spray film, the first thermal spray film and the second thermal spray film are continuously arranged on the main surface of the base material and a part of the interior of the recess, the second thermal spray film is made of a material different from that of the first thermal spray film, and the first thermal spray film and the other part of the interior of the recess are continuously arranged. And a coating layer covering the first thermal spray coating film.

Description

TECHNICAL FIELD

[0001] The present application relates to a member for a plasma processing apparatus and a method for manufacturing the member. BACKGROUND

[0002] A method for manufacturing a member for a plasma processing apparatus, in which a coating film is formed on a member by an atmospheric plasma thermal spraying method, is disclosed in Patent Literature 1. In the method for manufacturing the member, with respect to an anodized aluminum film constituting an inner peripheral surface of a hole of a base material, an intermediate layer and a coating film, which are, for example, yttrium oxide thermal spraying films, are sequentially formed by the atmospheric plasma thermal spraying method.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005]

Patent Literature 1

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The present application provides a technology capable of suppressing damage to a thermal spraying film caused by plasma.

[0008] MEANS FOR SOLVING THE PROBLEMS

[0009] According to one embodiment, a member for a plasma processing apparatus includes a base material and a thermal spraying film on a surface of the base material, the surface of the base material has a main surface, and a recessed portion recessed with respect to the main surface at a position overlapping with a terminal portion of the thermal spraying film, the thermal spraying film has a first thermal spraying film continuously provided on the main surface of the base material and a portion inside the recessed portion, and a second thermal spraying film continuously provided on the first thermal spraying film and other portions inside the recessed portion to cover the first thermal spraying film, the second thermal spraying film includes a material different from that of the first thermal spraying film.

[0010] EFFECTS OF THE INVENTION

[0011] According to one embodiment, damage to a thermal spraying film caused by plasma can be suppressed. BRIEF DESCRIPTION OF DRAWINGS

[0012]

【 Figure 1 FIG. 1 is a view schematically showing a plasma processing system including a plasma processing apparatus according to an embodiment of the present application.

[0013]

【 Figure 2 FIG. 2 is a sectional view showing an example of a baffle provided in a plasma processing chamber.

[0014]

【 Figure 3Fig. 1 is a cross-sectional view showing a vicinity of a forming position of a terminal portion of a thermal spray film in a baffle plate.

[0015]

Figure 4

[0016]

Figure 5

[0017]

Figure 6

[0018]

Figure 7

[0019] Hereinafter, an embodiment of the present application will be described with reference to the drawings. In each drawing, the same components are denoted by the same reference numerals, and repeated description will be omitted.

[0020] Figure 1 Fig. 1 is a cross-sectional view showing a vicinity of a forming position of a terminal portion of a thermal spray film in a baffle plate. Figure 1 , first, a configuration example of the plasma processing system will be described.

[0021] A plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a control unit 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one kind of processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, a side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one kind of processing gas to the plasma processing space 10s, and at least one gas exhaust port 10e for exhausting gas from the plasma processing space. The side wall 10a is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0022] The substrate support unit 11 includes a main body unit 111 and a ring assembly 112. The main body unit 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W, and a ring-shaped region (ring-shaped support surface) 111b for supporting the ring assembly 112. The ring-shaped region 111b of the main body unit 111 encloses the central region 111a of the main body unit 111 when viewed from above. The substrate W is disposed on the central region 111a of the main body unit 111, and the ring assembly 112 is disposed on the ring-shaped region 111b of the main body unit 111 so as to enclose the substrate W on the central region 111a of the main body unit 111. In one embodiment, the main body unit 111 includes a base and an electrostatic chuck. The base includes an electrically conductive member. The electrically conductive member of the base serves as a lower electrode. The electrostatic chuck is disposed above the base. An upper surface of the electrostatic chuck has the substrate support surface 111a. The ring assembly 112 includes one or more ring-shaped members. At least one of the one or more ring-shaped members is an edge ring. In addition, although not shown, the substrate support unit 11 can include a temperature adjustment module configured to adjust at least one of the electrostatic chuck, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module can include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows in the flow path. In addition, the substrate support unit 11 can include a heat transfer gas supply unit configured to supply a heat transfer gas between a back surface of the substrate W and the substrate support surface 111a.

[0023] The shower head 13 is configured to introduce at least one kind of process gas from the gas supply section 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c. In addition, the shower head 13 includes an electrically conductive member. The electrically conductive member of the shower head 13 functions as an upper electrode. Furthermore, the gas introduction section can include one or more side gas injectors (SGIs) in addition to the shower head 13, the one or more side gas injectors being installed on one or more opening sections formed in the side wall 10a.

[0024] The gas supply section 20 can include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply section 20 is configured to supply at least one kind of process gas from each corresponding gas source 21 to the shower head 13 via each corresponding flow controller 22. Each flow controller 22 can include, for example, a mass flow controller or a pressure-controlled flow controller. In addition, the gas supply section 20 can include one or more flow adjustment devices that adjust or pulse the flow of at least one kind of process gas.

[0025] The power source 30 includes an RF power source 31 connected to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the electrically conductive member of the substrate support section 11 and / or the electrically conductive member of the shower head 13. Thereby, a plasma is formed from at least one kind of process gas supplied to the plasma processing space 10s. Accordingly, the RF power source 31 can function as at least a part of a plasma generation section configured to generate a plasma from one or more kinds of process gas in the plasma processing chamber 10. In addition, by supplying the bias RF signal to the electrically conductive member of the substrate support section 11, a bias potential is generated on the substrate W, and ion components in the formed plasma can be introduced into the substrate W.

[0026] In one embodiment, the RF power source 31 includes a first RF generating portion 31a and a second RF generating portion 31b. The first RF generating portion 31a is configured to generate a source RF signal (source RF power) for generating plasma by being connected to the conductive member of the substrate support portion 11 and / or the conductive member of the showerhead 13 via at least one impedance matching circuit. In one embodiment, the source RF signal has a frequency in a range of 13 MHz to 150 MHz. In one embodiment, the first RF generating portion 31a can be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the conductive member of the substrate support portion 11 and / or the conductive member of the showerhead 13. The second RF generating portion 31b is configured to generate a bias RF signal (bias RF power) by being connected to the conductive member of the substrate support portion 11 via at least one impedance matching circuit. In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency in a range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generating portion 31b can be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to the conductive member of the substrate support portion 11. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal can be pulsed.

[0027] In addition, the power source 30 can include a DC power source 32 connected to the plasma processing chamber 10. The DC power source 32 includes a first DC generating portion 32a and a second DC generating portion 32b. In one embodiment, the first DC generating portion 32a is configured to generate a first DC signal by being connected to the conductive member of the substrate support portion 11. The generated first bias DC signal is applied to the conductive member of the substrate support portion 11. In one embodiment, the first DC signal can be applied to other electrodes, such as electrodes within an electrostatic chuck. In one embodiment, the second DC generating portion 32b is configured to generate a second DC signal by being connected to the conductive member of the showerhead 13. The generated second DC signal is applied to the conductive member of the showerhead 13. In various embodiments, at least one of the first and second DC signals can be pulsed. Further, the first and second DC generating portions 32a, 32b can be provided in addition to the RF power source 31, or the first DC generating portion 32a can be provided instead of the second RF generating portion 31b.

[0028] The exhaust system 40 can be connected to a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump can include a turbo molecular pump, a dry pump, or a combination thereof.

[0029] The control section 2 processes computer executable instructions that cause the plasma processing apparatus 1 to perform various processes described in the present application. The control section 2 can be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control section 2 can be included in the plasma processing apparatus 1. The control section 2 can include, for example, a computer 2a. The computer 2a can include, for example, a processing section (CPU: Central Processing Unit) 2al, a storage section 2a2, and a communication interface 2a3. The processing section 2al can be configured to perform various control operations based on a program stored in the storage section 2a2. The storage section 2a2 can include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 can communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0030] Also, the plasma processing apparatus 1 according to one embodiment has one or more baffle plates 50 between the side wall 10a of the plasma processing chamber 10 and the side surface of the substrate support section 11 (main body section 111). For example, the baffle plate 50 is provided on the vertical direction upper side of the gas exhaust port 10e. The baffle plate 50 has a function of dispersing the gas supplied into the plasma processing space 10s substantially uniformly in the outward direction from the periphery of the substrate W by being disposed between the plasma processing space 10s and the gas exhaust port 10e. Thus, the plasma processing apparatus 1 can uniformize the gas pressure around the substrate support section 11, thereby suppressing unevenness in substrate processing. In addition, the baffle plate 50 can be connected to the ground potential via the side wall 10a. The baffle plate 50 connected to the ground potential can shield the electric field of the plasma processing space 10s. Thus, the plasma processing apparatus 1 reduces the intrusion of plasma of the plasma processing space 10s into the exhaust system 40, and can suppress the occurrence of abnormal discharge in the exhaust system 40.

[0031] Figure 2 is a cross-sectional view showing an example of the arrangement of the baffle plate 50 in the plasma processing chamber 10. As shown in Figure 2 , the baffle plate 50 according to one embodiment is fixed in the plasma processing chamber 10 in a posture inclined with respect to the horizontal direction and the vertical direction. In addition, the baffle plate 50 is not limited to be arranged in the inclined posture, and for example, can be arranged to extend in the horizontal direction. In addition, although not shown, the planar shape of the baffle plate 50 is formed in an appropriate shape according to the planar shape of the side wall 10a of the plasma processing chamber 10 and the substrate support section 11. For example, in the case where the plasma processing chamber 10 and the substrate support section 11 are circular, the baffle plate 50 can be formed in a circular arc shape, a ring shape, or the like.

[0032] The baffle 50 has a main plate portion 51, an outer end 52 located distal from the substrate support portion 11, and an inner end 53 in contact with (or located adjacent to) the substrate support portion 11. The outer end 52 and the inner end 53 are integrally connected to the obliquely extending main plate portion 51, which is bent at an appropriate angle from the main plate portion 51 and extends in the vertical direction.

[0033] The baffle 50 is arranged so as to block the gas exhaust path from the plasma processing space 10s to the gas exhaust port 10e by fixing the outer end 52 to the side wall 10a and fixing the inner end 53 to the substrate support portion 11. The main plate portion 51 has a plurality of through-holes 51h that pass through in the thickness direction. The plurality of through-holes 51h allow gas on the vertically upper side of the baffle 50 to pass to the vertically lower side of the baffle 50.

[0034] The outer end 52 is mounted on a mounting protrusion 10f protruding from the inner surface of the side wall 10a, for example, by an appropriate fixing means. Further, the inner end 53 is mounted on the side surface of the substrate support portion 11 by an appropriate fixing means. The fixing means of the baffle 50 is not particularly limited and can be, for example, screwing, welding, or the like.

[0035] The baffle 50 described above is formed by applying a thermal spray film 70 to the surface 60s of a plate-shaped base material 60. The thermal spray film 70 is a coating for shielding the base material 60 from exposure to the plasma generated in the plasma processing chamber 10, and is formed by a plurality of thermal spray film layers, as will be described later.

[0036] The base material 60 of the baffle 50 is pre-formed into a shape that can be arranged between the side wall 10a and the substrate support portion 11 by a processing method such as injection molding, stamping, or cutting. The plate thickness of the base material 60 is not particularly limited and is preferably in the range of about 1 mm to about 10 mm, for example. The base material 60 is formed of a material having electrical conductivity. As the material of the base material 60, a metal such as aluminum, iron, copper, or an alloy thereof can be used, for example. The base material 60 of one embodiment is formed of aluminum. Further, an anodized aluminum film can be formed on the surface 60s of the base material 60 by Alumite (an anodizing treatment). In this case, the thermal spray film 70 can be stacked on the anodized aluminum film.

[0037] On the other hand, the thermal spray film 70 covers substantially the entire surface 60s (upper surface, lower surface, side surface) of the base material 60. Further, Figure 2 Note that the structure in which the inner surface of each through-hole 51h is not provided with the thermal spray film 70, but the thermal spray film 70 can be formed on the inner surface of each through-hole 51h.

[0038] Here, in order to enable the substrate 60 to communicate with the sidewall 10a, the substrate support 11, etc., the baffle 50 has portions where the thermal spray film 70 is not formed at the connection points with the sidewall 10a and the substrate support 11. Therefore, the substrate 60 has terminal portions 71 of the thermal spray film 70, which are the boundaries between the portions covered by the thermal spray film 70 and the portions not covered by the thermal spray film 70.

[0039] Terminal 71, for example Figure 2 As shown, the terminal portion 71 is located near the connection between the baffle 50 and the sidewall 10a and the substrate support 11. The terminal portion 71 can be located in a flat portion extending from the substrate 60, or adjacent to a curved portion of the substrate 60. Furthermore, the plasma processing apparatus 1 can have a thermally sprayed film 70 applied to the inner surface (e.g., the sidewall 10a) of the plasma processing chamber 10. Thus, the thermally sprayed film 70 can be used as a protective shield for the plasma processing chamber 10. When the plasma processing chamber 10 is covered by the thermally sprayed film 70, it is preferable to place the terminal portion 71 of the thermally sprayed film 70 near the location of each component.

[0040] The substrate 60 of the baffle 50 has a recess 61 at a position corresponding to (overlapping with) the terminal portion 71. When forming the thermal spray film 70, the terminal portion 71 enters this recess 61. Therefore, when forming the thermal spray film 70, it is possible to prevent the thermal spray film 70 from forming on the surface 60s of the substrate 60 opposite to the thermal spray film 70 sandwiched by the recess 61. Hereinafter, refer to... Figure 3 The structure of the thermal spray film 70 and the structure of the terminal part 71 are described in detail. Figure 3 This is a cross-sectional view showing an enlarged view of the area near the formation position of the terminal portion 71 of the thermally sprayed film 70 in the baffle 50.

[0041] The thermal spray film 70 includes a first thermal spray film 80 and a second thermal spray film 90. The first thermal spray film 80 and the second thermal spray film 90 are stacked in this order in a direction away from the surface 60s of the substrate 60.

[0042] The first thermal spray film 80 is formed of a high voltage-resistant material, and its thickness (film) is set to a degree that will not cause damage (cracks, etc.) due to the application of electricity to the substrate 60. Examples of materials for the first thermal spray film 80 include materials composed of appropriate combinations of yttrium, fluorine, oxygen, and aluminum. For example, materials for the first thermal spray film 80 include yttrium fluoride (YF3), yttrium oxide (Y2O3), yttrium fluoride oxyfluoride (YOF), yttrium aluminate (YAlO3), and aluminum oxide (Al2O3). Alternatively, zirconium oxide (GrO2) and mullite (Al6O3) may also be used as materials for the first thermal spray film 80. 13 Si2), spinel (MgAl2O4), etc.

[0043] The second thermal spray film 90 is preferably made of a material that has a lower voltage resistance than the first thermal spray film 80 but has a higher plasma resistance than the first thermal spray film 80. For example, the material of the second thermal spray film 90 is yttrium fluoride, yttrium oxyfluoride, or the like. In addition, the second thermal spray film 90 is made of a different material (a dissimilar material) from the first thermal spray film 80. For example, in the case where the first thermal spray film 80 is made of yttrium fluoride, the second thermal spray film 90 can be made of yttrium oxyfluoride.

[0044] In forming the thermal spray film 70 (the first thermal spray film 80, the second thermal spray film 90), a publicly known thermal spray method can be used. For example, in the thermal spray method, while a carrier gas such as argon is used to spray a thermal spray powder into a spray space, plasma is generated in the spray space, thereby forming a plasma jet that melts the thermal spray powder, and the plasma jet is sprayed onto the substrate 60. Also, during the spraying of the plasma jet, by relatively moving the nozzle of the plasma jet or the substrate 60, a thermal spray film is formed in the thermal spray range of the substrate 60.

[0045] As described above, the recess 61 is provided at a position overlapping the terminal portion 71 of the thermal spray film 70. The surface 60s of the substrate 60 has a main surface 62 that extends flat, and the recess 61 that is recessed with respect to the main surface 62 at a position overlapping the terminal portion of the thermal spray film 70. From a planar perspective of the substrate 60 and the thermal spray film 70, the recess 61 has a groove shape that extends along the extension direction of the terminal portion 71.

[0046] The recess 61 has an opening 61a at the same height position as the main surface 62 of the substrate 60. In addition, the inner wall of the recess 61 on the side of the portion covered by the thermal spray film 70 is inclined with respect to the opening 61a, and the inner wall on the side of the portion not covered by the thermal spray film 70 is perpendicular with respect to the opening 61a.

[0047] Also, the recess 61 has stepped bottom surfaces (a first stepped surface 64, a second stepped surface 66) from the opening 61a toward the depth direction. The first stepped surface 64 and the second stepped surface 66 are formed in this order from the opening 61a toward the depth direction. In addition, the recess 61 has a first inclined surface 63 between the main surface 62 and the first stepped surface 64, and a second inclined surface 65 between the first stepped surface 64 and the second stepped surface 66. That is, the first stepped surface 64 is connected to the main surface 62 by the first inclined surface 63, and is thus provided at a position deeper than the main surface 62. The second stepped surface 66 is connected to the first stepped surface 64 by the second inclined surface 65, and is thus provided at a position deeper than the first stepped surface.

[0048] The first step surface 64 and the second step surface 66 are formed so as to be substantially parallel to the extension direction of the main surface 62. The width Wl of the first step surface 64 is not particularly limited, and is preferably set, for example, in the range of about 0.5 mm to 5 mm. Also, the width W2 of the second step surface 66 is not particularly limited, and is preferably set, for example, in the range of about 0.5 mm to 5 mm. Also, in the example of Figure 3 the first step surface 64 and the second step surface 66 are the same size, but these widths Wl, W2 can also be different sizes from each other.

[0049] Also, the angle θl of the first inclined surface 63 with respect to the main surface 62 is preferably set, for example, in the range of about 105° to 165°. Also, the angle θ2 of the second inclined surface 65 with respect to the first step surface 64 is also preferably set, for example, in the range of about 105° to 165°. By thus setting the angle θl of the first inclined surface 63 and the angle θ2 of the second inclined surface 65, it is possible to suppress the occurrence of a sharp concavo-convex variation in the recess 61. Also, it is possible to prevent the first thermal spray film 80 from being exposed due to misalignment of the thermal spray film 70 caused by this concavo-convex variation.

[0050] The thermal spray film 70 is coated so as to enter the recess 61 having the above-described main surface 62, first inclined surface 63, first step surface 64, second inclined surface 65, and second step surface 66, and a terminal portion 71 of the thermal spray film 70 is formed.

[0051] Specifically, the first thermal spray film 80 continuously covers the main surface 62, the first inclined surface 63, and the first step surface 64 of the substrate 60. Also, the first thermal spray film 80 has a terminal 81 at the boundary of the first step surface 64 and the second inclined surface 65. In this way, by locating the terminal 81 at the boundary of the first step surface 64 and the second inclined surface 65, it is possible to cause the first thermal spray film 80 to be interrupted well, and it is possible to stably coat the second thermal spray film 90 on the second inclined surface 65 and the second step surface 66. Also, in the example of Figure 3 the terminal 81 of the first thermal spray film 80 is formed so as to be perpendicular to the first step surface 64, but the terminal 81 of the first thermal spray film 80 can also be an inclined shape in which the thickness gradually thins.

[0052] On the other hand, the second thermal spray film 90 is formed on the first thermal spray film 80 (the surface 82) formed on the main surface 62, the first inclined surface 63, and the first step surface 64 of the substrate 60, and continuously covers the second inclined surface 65 and the second step surface 66 exposed from the first thermal spray film 80. More specifically, the second thermal spray film 90 is formed by extending first in a direction parallel to the surface 82 on the first thermal spray film 80 of the first step surface 64, and then extending obliquely from the terminal end 81 of the first thermal spray film 80 toward the second inclined surface 65. The terminal end 91 of the second thermal spray film 90 is located at an end portion (a vertical inner wall of the recessed portion 61) on the opposite side of the end portion of the second step surface 66 connected to the second inclined surface 65. In this way, by locating the terminal end 91 of the second thermal spray film 90 at the opposite end portion of the second step surface 66, the first thermal spray film 80 can be reliably covered.

[0053] Thus, the thermal spray film 70 can form the second thermal spray film 90 in a form that conforms to the first inclined surface 63, the first step surface 64, the second inclined surface 65, and the second step surface 66 of the recessed portion 61, and can cover the entire first thermal spray film 80 between the substrate 60. That is, the thermal spray film 70 can reliably prevent the first thermal spray film 80 formed of a material with high voltage resistance from being exposed. In particular, the recessed portion 61 can achieve smooth and continuous coverage of the first thermal spray film 80 by the first inclined surface 63, and achieve smooth and continuous coverage of the second thermal spray film 90 by the second inclined surface 65. Therefore, changes in film thickness due to a sharp change in the shape of the substrate 60 can be suppressed. Thus, the substrate 60 can be more stably covered by the first thermal spray film 80, and the first thermal spray film 80 and the substrate 60 can be more stably covered by the second thermal spray film 90.

[0054] The baffle 50 (component for plasma processing apparatus) according to one embodiment is basically formed in the above-described manner, and the following describes Figures 4-6 A method for manufacturing the baffle 50 will be described. Figure 4 (A) is a flowchart showing a first manufacturing method of the baffle 50. Figure 4 (B) is a flowchart showing a second manufacturing method of the baffle 50. Figure 5 (A) ~ Figure 5 (D) is an explanatory diagram schematically showing each process of the first manufacturing method of the baffle 50. Figure 6 (A) ~ Figure 6 (D) is an explanatory diagram schematically showing each process of the second manufacturing method of the baffle 50.

[0055] [First Manufacturing Method]

[0056] First, a method for manufacturing the baffle 50 will be described. Figure 4(A) shown in FIG. 1. In the first manufacturing method, the substrate providing step Sll (process (A)), the first thermal spraying step S12 (process (B)), the cutting step S13 (process (C)), and the second thermal spraying step S14 (process (D)) are sequentially performed.

[0057] In the substrate providing step Sll, the substrate 60 for the baffle 50 is prepared (provided). For example, in the substrate providing step Sll, the manufacturer forms shapes corresponding to the main plate portion 51, the outer end 52, and the inner end 53 by performing press working on a raw material plate of the substrate 60. Further, after (or before) the press working, the manufacturer forms the recess 61 by cutting the plate at an appropriate position of the main surface 62 of the substrate 60 (a position at which the terminal portion 71 of the thermal spraying film 70 is to be formed).

[0058] However, as Figure 5 (A) shown in FIG. 1, the recess 61 of the substrate 60 is provided with the first inclined surface 63 and the first step surface 64, but is not provided with the second inclined surface 65 and the second step surface 66. That is, at the stage of the substrate providing step Sll, the recess 61 has a solid portion of the substrate 60 at a position where the second inclined surface 65 and the second step surface 66 are to be formed, and is continuous with the first step surface 64.

[0059] Next, in the first thermal spraying step S12, the first thermal spraying film 80 is formed on the surface 60s of the substrate 60 provided in the substrate providing step Sll. By the above-described appropriate thermal spraying method, the first thermal spraying film 80 is formed so as to continuously cover the main surface 62 of the substrate 60 and the recess 61, as shown in Figure 5 (B) shown in FIG. 1. Thus, the first thermal spraying film 80 is in a state of extending to the inner wall of the recess 61 on the opposite side from the first inclined surface 63 through the first step surface 64 within the recess 61. Further, as shown in Figure 5 (B) shown in FIG. 1, the terminal 81 of the first thermal spraying film 80 can be in contact with the inner wall, or can be slightly separated from the inner wall.

[0060] Then, in the cutting step S13, the recess 61 of the substrate 60 on which the first thermal spraying film 80 is formed in the first thermal spraying step S12 is subjected to cutting processing using a cutting device not shown. In this cutting step S13, as shown in Figure 5 (C) shown in FIG. 1, the first step surface 64 and the first thermal spraying film 80 are integrally cut. Thus, the second inclined surface 65 and the second step surface 66 are formed within the recess 61, and the first thermal spraying film 80 stacked on this portion is removed. That is, in the cutting step S13, the terminal 81 of the first thermal spraying film 80 is moved to the boundary between the first step surface 64 and the second inclined surface 65, and the substrate 60 on which the second inclined surface 65 and the second step surface 66 are exposed from the first thermal spraying film 80 is formed.

[0061] In the final second thermal spraying step S14, the substrate 60 after the cutting step S13 is covered with a second thermal spray film 90. Through the aforementioned appropriate thermal spraying method, the second thermal spray film 90 is formed as follows: Figure 5 As shown in (D), it is formed in such a way that it continuously covers the surface 82 of the first thermal spray film 80, the second inclined surface 65 and the second stepped surface 66 within the recess 61. In this way, in the first manufacturing method, the entire bottom surface of the recess 61 can be covered with the second thermal spray film 90, resulting in a thermal spray film 70 in which the first thermal spray film 80 is indeed not exposed at the terminal portion 71.

[0062] [Second Manufacturing Method]

[0063] Below, on Figure 4 (B) The second manufacturing method of the baffle 50 shown will be described. In the second manufacturing method, the substrate supply process 21 (process (A)), the mask process S22 (process (E)), the first thermal spraying process S23 (process (B)), the peeling process S24 (process (C)) and the second thermal spraying process S25 (process (D)) are performed in sequence.

[0064] In the substrate supply process S21, a substrate 60 for the baffle 50 is provided. Here, as... Figure 6 As shown in (A), the recess 61 of the substrate 60 in the second manufacturing method is in a state having a first inclined surface 63, a first stepped surface 64, a second inclined surface 65 and a second stepped surface 66.

[0065] In the subsequent masking process S22, such as Figure 6 As shown in (B), the second inclined surface 65 and the second stepped surface 66 of the recess 61 are covered by a mask 92. For example, the mask 92 may be a component with a width consistent with the width of the second inclined surface 65 and the second stepped surface 66, and one side having an adhesive layer. Furthermore, the mask 92 has non-dissolving resistance relative to the first thermal spray film 80 in the first thermal spraying process S23. Thus, the substrate 60 after the masking process S22 is in a state where the main surface 62, the first inclined surface 63, and the first stepped surface 64 are exposed from the mask 92.

[0066] Then, in the first thermal spraying step S23, a first thermal spray film 80 is formed on the surface 60s of the substrate 60 that has passed through the masking step S22. For example... Figure 6 As shown in (C), the first thermally sprayed film 80 is formed as follows: it extends on the main surface 62, the first inclined surface 63, and the first stepped surface 64 of the substrate 60, and further extends to the middle position of the mask 92. The mask 92 has sufficient width to easily position the end 81 of the first thermally sprayed film 80 on the mask 92 even if the thermal spraying range is unstable due to the thermal spraying method.

[0067] In the next peeling process S24, the mask 92 is peeled from the substrate 60 on which the first thermal sprayed film 80 is formed by the first thermal spraying process S23. As shown in FIG. 8, Figure 6 (D) In this peeling process, the first thermal sprayed film 80 coated on the upper surface of the mask 92 is also peeled together with the mask 92. Thus, the substrate 60 after peeling of the mask 92 is in a state where the main surface 62, the first inclined surface 63 and the first step surface 64 are covered with the first thermal sprayed film 80, and the second inclined surface 65 and the second step surface 66 are exposed from the first thermal sprayed film 80.

[0068] The final second thermal spraying process S25 is the same as the second thermal spraying process S14 of the first manufacturing method, and forms the second thermal sprayed film 90. Thus, the second thermal sprayed film 90 is formed to be continuous on the first thermal sprayed film 80 and the second inclined surface 65 and the second step surface 66 in the recessed portion 61 (see also FIG. 8, Figure 5 (D)). In this way, in the second manufacturing method, the entire bottom surface of the recessed portion 61 can be covered with the second thermal sprayed film 90, and the terminal portion 71 of the thermal sprayed film 70 which is not exposed by the first thermal sprayed film 80 can be obtained.

[0069] As described above, the baffle 50 as a component of the plasma processing apparatus 1 and the manufacturing method thereof can cover the first thermal sprayed film 80 with the second thermal sprayed film 90 in the recessed portion 61 of the substrate 60, and form the non-exposed terminal portion 71. In this way, the baffle 50 can withstand high voltage with the first thermal sprayed film 80, and can suppress damage to the thermal sprayed film 70 by plasma with the second thermal sprayed film 90. That is, the second thermal sprayed film 90 has high resistance to plasma, and covers the entire first thermal sprayed film 80, so that plasma can be suppressed from reaching the first thermal sprayed film 80. As a result, the baffle 50 can prevent the first thermal sprayed film 80 having high voltage resistance from being damaged, and maintain the shape of the thermal sprayed film 70.

[0070] Further, the baffle 50 can appropriately divide the coverage range of the first thermal sprayed film 80 and the coverage range of the second thermal sprayed film 90 by providing the first step surface 64 and the second step surface 66 in the recessed portion 61. Thus, the first thermal sprayed film 80 can be more stably covered with the second thermal sprayed film 90. Moreover, the baffle 50 can make the first thermal sprayed film 80 and the second thermal sprayed film 90 smooth by providing the first inclined surface 63 and the second inclined surface 65 in the recessed portion 61. As a result, the film thickness of the first thermal sprayed film 80 and the second thermal sprayed film 90 can not be abruptly changed, and the continuity of the first thermal sprayed film 80 and the second thermal sprayed film 90 can be ensured.

[0071] Moreover, the baffle 50 and the manufacturing method of the baffle 50 are not limited to the above-described embodiment, and various modifications are possible. For example, the member for the plasma processing apparatus 1 is not limited to the baffle 50, and is applicable to various members having the thermal spray film 70. For example, there are a shield plate inside the plasma processing chamber 10 for blocking plasma, a shield portion formed on the inner surface of the above-described plasma processing chamber 10, and the like.

[0072] Figure 7 is a cross-sectional view of a terminal portion 71 of the thermal spray film 70 of a baffle 50A involved in a modification. As shown in Figure 7 the baffle 50A differs from the baffle 50 involved in the above-described embodiment in that the recessed portion 61A has the first step face 64 but does not have the second step face 66. Even so, the first thermal spray film 80 can be covered to a midway position of the first step face 64, and the second thermal spray film 90 can be covered to the exposed portion of the first thermal spray film 80 and the first step face 64.

[0073] For example, for the baffle 50A, the same method as the above-described second manufacturing method is adopted, and in the mask process S22, the mask 92 is provided at one portion (a portion close to the inner wall on the side opposite to the first inclined face 63) of the first step face 64 of the recessed portion 61A. Then, the first thermal spray process S23 is performed in the state with the mask 92, and the first thermal spray film 80 is formed on the first step face 64 and the mask 92. Further, the mask 92 is peeled from the first step face 64 through the peeling process S24, and thus the portion covered by the first thermal spray film 80 and the portion not covered by the first thermal spray film 80 can be formed on the first step face 64. Therefore, finally, by implementing the second thermal spray process S25, the second thermal spray film 90 can be superimposed in a manner such that the first thermal spray film 80 and the first step face 64 are continuous.

[0074] Even in this case, the second thermal spray film 90 can surely put the first thermal spray film 80 in a non-exposed state. Therefore, the thermal spray film 70 can suppress peeling of the first thermal spray film 80 caused by plasma generated in the plasma processing space 10s. Thus, the plasma processing apparatus 1 can suppress contamination of the plasma processing space 10s caused by peeling of the first thermal spray film 80 from the baffle 50, and thus can perform plasma processing on the substrate W favorably.

[0075] The above-described embodiment, for example, includes the following modes.

[0076] [Note 1]

[0077] A member for a plasma processing apparatus includes a substrate and a thermal spray film on a surface of the substrate,

[0078] the surface of the substrate has a main surface and a recess that is recessed with respect to the main surface of the substrate at a position overlapping with a terminal portion of the thermal spray film,

[0079] the thermal spray film has,

[0080] a first thermal spray film that is continuously provided on the main surface of the substrate and a portion of the inside of the recess, and

[0081] a second thermal spray film that contains a different material from the first thermal spray film and covers the first thermal spray film by being continuously provided on the first thermal spray film and the other portion of the inside of the recess.

[0082] [Note 2]

[0083] The component for a plasma processing apparatus according to Note 1, the recess has a first step surface and a second step surface in this order from an opening toward a depth direction,

[0084] the first thermal spray film is provided on the main surface of the substrate to the first step surface,

[0085] the second thermal spray film is provided on the first thermal spray film to the second step surface.

[0086] [Note 3]

[0087] The component for a plasma processing apparatus according to Note 2, the substrate has a first inclined surface between the main surface of the substrate and the first step surface, and a second inclined surface between the first step surface and the second step surface,

[0088] the first thermal spray film is provided on the main surface of the substrate, the first inclined surface, and the first step surface,

[0089] the second thermal spray film is provided on the first thermal spray film, the second inclined surface, and the second step surface.

[0090] [Note 4]

[0091] The component for a plasma processing apparatus according to Note 3, the first inclined surface is inclined at an angle in a range of 105° to 165° with respect to the main surface of the substrate,

[0092] the second inclined surface is inclined at an angle in a range of 105° to 165° with respect to the first step surface.

[0093] [Note 5]

[0094] The component for a plasma processing apparatus according to any one of the above 3 to 4, wherein a terminal end of the first thermal spray film is located at a boundary between the first step surface and the second inclined surface.

[0095] [Para 6]

[0096] The component for a plasma processing apparatus according to any one of the above 3 to 5, wherein a terminal end of the second thermal spray film is located at an end portion of the second step surface opposite to an end portion connected to the second inclined surface.

[0097] [Para 7]

[0098] The component for a plasma processing apparatus according to any one of the above 1 to 6, wherein the first thermal spray film is formed of a material having a higher voltage resistance than the second thermal spray film,

[0099] the second thermal spray film is formed of a material having a higher plasma resistance than the first thermal spray film.

[0100] [Para 8]

[0101] The component for a plasma processing apparatus according to the above 7, wherein the first thermal spray film contains at least one of yttrium fluoride, yttrium oxide, yttrium oxyfluoride, yttrium aluminate, and aluminum oxide,

[0102] the second thermal spray film contains at least one of yttrium fluoride and yttrium oxyfluoride.

[0103] [Para 9]

[0104] The component for a plasma processing apparatus according to any one of the above 1 to 8, wherein the component is at least one of a baffle provided in a gas exhaust line inside a plasma processing chamber, a shield that shields plasma inside the plasma processing chamber, and a shield portion formed in an inner surface of the plasma processing chamber.

[0105] [Para 10]

[0106] A method for manufacturing a component for a plasma processing apparatus, the component including a substrate and a thermal spray film provided on a surface of the substrate, the method comprising:

[0107] (A) providing the substrate, the surface of the substrate having a main surface and a recessed portion recessed with respect to the main surface of the substrate at a position overlapping a terminal end portion of the thermal spray film,

[0108] (B) after the step (A), continuously providing a first thermal spray film on the main surface of the substrate and the recessed portion,

[0109] (C) after the step (B), a part of the first thermal spray film inside the recess is peeled off by machining the recess,

[0110] (D) after the step (C), the first thermal spray film is covered by successively providing a second thermal spray film containing a material different from that of the first thermal spray film on the first thermal spray film and the peeled-off part inside the recess.

[0111] [Note 11]

[0112] The method of manufacturing a component according to Note 10, in the step (A), the base material having a first step surface at a bottom surface of the recess is provided,

[0113] In the step (B), the first thermal spray film is provided in a range from a main surface of the base material to the first step surface,

[0114] In the step (C), the first thermal spray film and the first step surface are cut to form a second step surface deeper than the first step surface from an opening of the recess toward a depth direction,

[0115] In the step (D), the second thermal spray film is provided in a range from the first thermal spray film to the second step surface.

[0116] [Note 12]

[0117] The method of manufacturing a component according to Note 11, in the step (A), the base material having a first inclined surface between a main surface of the base material and the first step surface is provided,

[0118] In the step (B), the first thermal spray film is provided on the main surface of the base material, the first inclined surface, and the first step surface,

[0119] In the step (C), the cutting is performed in a manner that a second inclined surface is generated between the first step surface and the second step surface,

[0120] In the step (D), the second thermal spray film is provided on the first thermal spray film, the second inclined surface, and the second step surface.

[0121] [Note 13]

[0122] The method of manufacturing a component according to Note 10, in the step (A), the base material sequentially having a first step surface and a second step surface from an opening of the recess toward a depth direction is provided,

[0123] As a process (E) between the process (A) and the process (B), a mask is formed on the second step face,

[0124] In the process (B), the first thermal spray film is covered on the main surface of the substrate, the first inclined face, the first step face, and the mask,

[0125] In the process (C), the mask and the first thermal spray film formed on the mask are peeled off, and the second step face is exposed,

[0126] In the process (D), the second thermal spray film is covered on the first thermal spray film and the second step face.

[0127] [Note 14]

[0128] According to the method for manufacturing a component according to Note 13, in the process (A), the substrate is provided, the main surface of the substrate and the first step face have a first inclined face therebetween, and the first step face and the second step face have a second inclined face therebetween,

[0129] In the process (E), the mask is covered on the second step face and the second inclined face,

[0130] In the process (B), the first thermal spray film is covered on the main surface of the substrate, the first inclined face, the first step face, and the mask,

[0131] In the process (C), the second step face and the second inclined face are exposed by peeling off the mask,

[0132] In the process (D), the second thermal spray film is covered on the first thermal spray film, the second inclined face, and the second step face.

[0133] The embodiments disclosed herein relate to a component for a plasma processing apparatus and a manufacturing method. The embodiments are illustrative and not restrictive. The embodiments can be modified in various forms without departing from the scope of the appended claims and their equivalents. The matters described herein are illustrative and not restrictive. The matters described herein can be combined with other matters without departing from the scope of the disclosure.

[0134] The plasma processing apparatus of the present application can be applied to any type of apparatus such as an atomic layer deposition (ALD) apparatus, a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), a radial line slot antenna (RLSA), an electron cyclotron resonance plasma (ECR), and a helicon wave plasma (HWP).

[0135] This application claims priority from Japanese Patent Application No. 2023-50764 filed on March 28, 2023 in the Japan Patent Office, the entire contents of which are hereby incorporated by reference.

[0136] [Reference Signs]

[0137] 1 Plasma processing apparatus

[0138] 50 Baffle

[0139] 60 Substrate

[0140] 61 Concave portion

[0141] 70 Thermal spray film

[0142] 71 Terminal portion

[0143] 80 First thermal spray film

[0144] 90 Second thermal spray film

Claims

1. A component for a plasma processing apparatus, comprising a substrate and a thermal spray film on a surface of the substrate, the surface of the substrate has a main surface and a recess that is recessed with respect to the main surface of the substrate at a position overlapping a terminal portion of the thermal spray film, the thermal spray film has: a first thermal spray film that is continuously provided on the main surface of the substrate and a part of the inside of the recess, and a second thermal spray film that covers the first thermal spray film by being continuously provided on the first thermal spray film and the other part of the inside of the recess, and that contains a material different from that of the first thermal spray film.

2. The component for a plasma processing apparatus according to claim 1, the recess has a first step surface and a second step surface in order from an opening toward a depth direction, the first thermal spray film is provided from the main surface of the substrate to the first step surface, the second thermal spray film is provided from the first thermal spray film to the second step surface.

3. The component for a plasma processing apparatus according to claim 2, the substrate has a first inclined surface between the main surface of the substrate and the first step surface, and a second inclined surface between the first step surface and the second step surface, the first thermal spray film is provided on the main surface of the substrate, the first inclined surface, and the first step surface, the second thermal spray film is provided on the first thermal spray film, the second inclined surface, and the second step surface.

4. The component for a plasma processing apparatus according to claim 3, the first inclined surface is inclined at an angle in a range of 105° to 165° with respect to the main surface of the substrate, the second inclined surface is inclined at an angle in a range of 105° to 165° with respect to the first step surface.

5. The component for a plasma processing apparatus according to claim 3, a terminal of the first thermal spray film is located at a boundary between the first step surface and the second inclined surface.

6. The component for a plasma processing apparatus according to claim 3, a terminal of the second thermal spray film is located at an end portion on an opposite side from an end portion connected to the second inclined surface in the second step surface.

7. The component for a plasma processing apparatus according to any one of claims 1 to 6, the first thermal spray film is formed of a material having a higher voltage resistance than the second thermal spray film, the second thermal spray film is formed of a material having a higher plasma resistance than the first thermal spray film.

8. The component for a plasma processing apparatus according to claim 7, the first thermal spray film contains at least one of yttrium fluoride, yttrium oxide, yttrium oxyfluoride, yttrium aluminate, and aluminum oxide, the second thermal spray film contains at least one of yttrium fluoride and yttrium oxyfluoride.

9. The component for a plasma processing apparatus according to any one of claims 1 to 6, the component is at least one of a baffle provided in a gas exhaust line inside a plasma processing chamber, a shield provided to shield plasma inside the plasma processing chamber, and a shield portion formed in an inner surface of the plasma processing chamber.

10. A method of manufacturing a component, which is a method of manufacturing a component for a plasma processing apparatus including a substrate and a thermal spray film provided on a surface of the substrate, the method comprising: a step (A) of providing the substrate, the substrate having a main surface and a recessed portion on a surface of the substrate, the recessed portion being recessed with respect to the main surface of the substrate at a position overlapping with a terminal portion of the thermal spray film; a step (B) of successively providing a first thermal spray film on the main surface of the substrate and the recessed portion after the step (A); a step (C) of peeling off a portion of the first thermal spray film inside the recessed portion by processing the recessed portion after the step (B); a step (D) of covering the first thermal spray film by successively providing a second thermal spray film including a material different from that of the first thermal spray film on the first thermal spray film and the peeled portion inside the recessed portion after the step (C).

11. The method of manufacturing a component according to claim 10, wherein, in the step (A), the substrate has a first step surface on a bottom surface of the recessed portion, in the step (B), the first thermal spray film is provided in a range from the main surface of the substrate to the first step surface, in the step (C), the first thermal spray film and the first step surface are cut to form a second step surface deeper than the first step surface from an opening of the recessed portion toward a depth direction, and in the step (D), the second thermal spray film is provided in a range from the first thermal spray film to the second step surface.

12. The method of manufacturing a component according to claim 11, wherein, in the step (A), the substrate has a first inclined surface between the main surface of the substrate and the first step surface, in the step (B), the first thermal spray film covers the main surface of the substrate, the first inclined surface, and the first step surface, in the step (C), the cutting is performed in a manner that a second inclined surface is generated between the first step surface and the second step surface, and in the step (D), the second thermal spray film covers the first thermal spray film, the second inclined surface, and the second step surface.

13. The method of manufacturing a component according to claim 10, wherein, in the step (A), the substrate has a first step surface and a second step surface in this order from an opening of the recessed portion toward a depth direction, as a step (E) between the step (A) and the step (B), a mask is formed on the second step surface, in the step (B), the first thermal spray film covers the main surface of the substrate, the first step surface, and the mask, in the step (C), the mask and the first thermal spray film formed on the mask are peeled off to expose the second step surface, and in the step (D), the second thermal spray film covers the first thermal spray film and the second step surface. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ 14. The method of manufacturing a component according to claim 13, wherein in the process (A), the substrate is provided with a first inclined surface between a main surface of the substrate and the first step surface, and a second inclined surface between the first step surface and the second step surface, in the process (E), the mask is overlaid on the second step surface and the second inclined surface, in the process (B), the first thermal spray film is overlaid on the main surface of the substrate, the first inclined surface, the first step surface, and the mask, in the process (C), the second step surface and the second inclined surface are exposed by peeling the mask, in the process (D), the second thermal spray film is overlaid on the first thermal spray film, the second inclined surface, and the second step surface.

15. The method of manufacturing a component according to claim 13, wherein in the process (A), the substrate is provided with a first inclined surface between a main surface of the substrate and the first step surface, and a second inclined surface between the first step surface and the second step surface, in the process (E), the mask is overlaid on the second step surface and the second inclined surface, in the process (B), the first thermal spray film is overlaid on the main surface of the substrate, the first inclined surface, the first step surface, and the mask, in the process (C), the second step surface and the second inclined surface are exposed by peeling the mask, in the process (D), the second thermal spray film is overlaid on the first thermal spray film, the second inclined surface, and the second step surface.

16. The method of manufacturing a component according to claim 13, wherein in the process (A), the substrate is provided with a first inclined surface between a main surface of the substrate and the first step surface, and a second inclined surface between the first step surface and the second step surface, in the process (E), the mask is overlaid on the second step surface and the second inclined surface, in the process (B), the first thermal spray film is overlaid on the main surface of the substrate, the first inclined surface, the first step surface, and the mask, in the process (C), the second step surface and the second inclined surface are exposed by peeling the mask, in the process (D), the second thermal spray film is overlaid on the first thermal spray film, the second inclined surface, and the second step surface.

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