Capacitor metallized film multi-source collaborative evaporation method and metallized film thereof

Abstract

The invention discloses a capacitor metallized film multi-source cooperative evaporation method and a metallized film thereof, and the method comprises the following steps: S1, multi-source evaporation: employing a plurality of evaporation sources, and carrying out the temperature regulation of each evaporation source through an independent heating control system, so as to enable different metal materials to be stably evaporated at the respective optimal evaporation temperature; and S2, cooperative control is carried out, and a plurality of high-precision film thickness sensors and component analyzers are arranged in the evaporation chamber. The multiple evaporation sources work at the same time, efficient cooperation is achieved through cooperative control, compared with single-source evaporation, the evaporation time is greatly shortened, the production efficiency is improved, the requirement of large-scale industrial production can be met, the thickness uniformity and component consistency of the metallized film are guaranteed through an accurate cooperative control mechanism, and the production efficiency is improved. The electrical performance stability of the film is effectively improved, the adhesive force between the film layer and the substrate film is enhanced, and the possibility of problems such as film stripping in the subsequent processing and using process is reduced.

Description

Technical Field

[0001] This invention belongs to the field of capacitor manufacturing technology, and particularly relates to a multi-source synergistic evaporation method for capacitor metallization thin films and the metallization thin films thereof. Background Technology

[0002] Metallized film capacitors are widely used in many fields such as electronic equipment and power systems due to their excellent electrical properties, such as high energy density, low loss, and good self-healing characteristics. The performance of its core component, the metallized film, directly affects the overall quality and performance of the capacitor.

[0003] Traditional metallization thin film evaporation methods have several shortcomings. Single-source evaporation is inefficient and cannot meet the needs of large-scale production; in multi-source evaporation, each evaporation source works independently without an effective coordination mechanism, resulting in poor uniformity of metal film thickness and difficulty in ensuring compositional consistency. During the evaporation process, the deposition rate and distribution of metal atoms are difficult to control precisely, easily leading to areas of excessively thick or thin films, which affects the electrical performance stability of capacitors. Summary of the Invention

[0004] To address the problems in the prior art, the present invention proposes the following technical solution:

[0005] A multi-source synergistic evaporation method for capacitor metallization thin films includes the following steps:

[0006] S1. Multi-source evaporation: Multiple evaporation sources are used, and each evaporation source is temperature-controlled by an independent heating and control system, so that different metal materials can be stably evaporated at their respective optimal evaporation temperatures.

[0007] S2. Collaborative control: Multiple high-precision film thickness sensors and composition analyzers are set in the vapor deposition chamber to monitor the metal deposition thickness and composition changes on the film surface in real time. The sensors transmit data to the computer control system. The control system calculates the evaporation rate adjustment of each evaporation source according to the preset target film thickness and composition ratio through the algorithm, so as to realize the collaborative work of each evaporation source.

[0008] S3. Thin film pretreatment: After pretreatment of the substrate thin film, it is sent into the vapor deposition chamber through a high-precision thin film transfer device. The transfer device adopts constant tension control technology.

[0009] S4. Evaporation chamber parameter control: precisely control the vacuum level and gas atmosphere within the evaporation chamber, maintaining the vacuum level at 10. -4 -10 -6 Within the range of Pa, an appropriate amount of inert gas or reactive gas may be introduced as needed;

[0010] S5. After the evaporation is completed, turn off the heating source and introduce gas into the evaporation chamber, and allow the film to cool naturally to room temperature while maintaining a vacuum state.

[0011] As a preferred embodiment of the above technical solution, the plurality of evaporation sources includes at least two of zinc evaporation sources, aluminum evaporation sources, and copper evaporation sources, wherein the heating temperature of the zinc evaporation source is controlled at 600℃-700℃, the heating temperature of the aluminum evaporation source is controlled at 1200℃-1400℃, and the heating temperature of the copper evaporation source is controlled at 1083℃-1183℃.

[0012] As a preferred embodiment of the above technical solution, when the computer control system detects that the content of a certain metal in the film deviates from the target value, it automatically adjusts the heating power of the corresponding evaporation source to change the evaporation rate of the metal atom, and at the same time adjusts the evaporation rate of other evaporation sources to maintain the overall composition balance.

[0013] As a preferred embodiment of the above technical solution, the collaborative control includes a data processing and analysis module, which uses an adaptive weighted PID algorithm to calculate the evaporation rate adjustment of each evaporation source.

[0014] As a preferred embodiment of the above technical solution, S21, deviation quantification and weight allocation, compares the real-time data collected by the film thickness sensor and the component analyzer with the preset target value, and quantifies them into two types of deviation values:

[0015] Film thickness deviation Δh: The difference between the actual film thickness and the target film thickness at a certain monitoring point, in nm;

[0016] Component deviation Δc n : The percentage difference between the actual content and the target content of the nth metal.

[0017] As a preferred embodiment of the above technical solution, S22 and PID parameters are adaptively adjusted. Based on the deviation value and weights, the algorithm calculates the outputs of the proportional term (P), integral term (I), and derivative term (D) in real time.

[0018] Proportional term: K p ×(ω h ×Δh+Σ(ωc n ×Δc n )), where K p This is a proportionality coefficient that decreases linearly as the absolute value of the total deviation increases, ranging from 1.2 to 0.8, to avoid excessive adjustment that could cause oscillations.

[0019] Integral term: K i ×∫(ω h ×Δh+Σ(ωc n ×Δc n ))dt, integral coefficient K i The design incorporates anti-integral saturation; when the adjustment reaches the maximum adjustment range of the equipment, the heating power is reduced by ±20%, and integral accumulation stops.

[0020] Differential term: Kd×d(ω) h ×Δh+Σ(ωc n ×Δc n The differential coefficient Kd increases with the rate of change of the deviation, ranging from 0.3 to 0.6, thus enhancing the system's response speed to sudden disturbances.

[0021] As a preferred embodiment of the above technical solution, S23, the evaporation rate adjustment amount is calculated, and the rate adjustment amount Δv for each evaporation source is calculated. n Calculated using the following formula:

[0022] Δv n =K pn ×[ωh×(Δh / H0)×v 0n +ωc n ×Δc n ×v 0n ]+K in ×∫[...]+Kd n ×d[...] / dt

[0023] in:

[0024] K pn K in Kd n The PID parameters for the nth evaporation source are preset with initial values ​​based on the metal type. For the aluminum evaporation source K... p =1.1, Zinc evaporation source K p =1.0);

[0025] H0 represents the target film thickness, in nm.

[0026] v 0n This represents the current baseline evaporation rate of the nth evaporation source, expressed in nm / s.

[0027] As a preferred embodiment of the above technical solution, S24, cooperative constraint correction

[0028] To avoid conflicts in the adjustment amounts of various evaporation sources, and to prevent fluctuations in the overall rate due to significant increases or decreases, a cooperative constraint condition is introduced:

[0029] The total evaporation rate change rate is ≤ ±5% / s to ensure film uniformity;

[0030] The adjusted proportions of each metal component must satisfy 0 < c. n <100%, avoid metal content being zero;

[0031] If the calculation results violate the constraints, the adjustment amount is redistributed using the least squares method to minimize the total deviation while satisfying the constraints.

[0032] As a preferred embodiment of the above technical solution, plasma cleaning technology is used for the pretreatment of the substrate film to remove impurities, oil, and oxides from the surface of the substrate film.

[0033] The constant tension control technology of the high-precision thin film transmission device can ensure that the tension of the substrate film is stable during transmission, and avoid film shaking caused by tension fluctuations.

[0034] The metallized thin film is prepared by any of the above-mentioned multi-source synergistic evaporation methods for capacitor metallized thin films.

[0035] The beneficial effects of this invention are as follows:

[0036] 1. This invention allows multiple evaporation sources to work simultaneously and achieve efficient coordination through collaborative control. Compared with single-source evaporation, this greatly shortens the evaporation time, improves production efficiency, and can meet the needs of large-scale industrial production.

[0037] 2. The precise collaborative control mechanism of this invention ensures the uniformity of the metallized film thickness and the consistency of its composition, effectively improving the electrical performance stability of the film, enhancing the adhesion between the film layer and the substrate film, and reducing the possibility of problems such as film detachment during subsequent processing and use.

[0038] 3. By optimizing the vapor deposition process and improving production efficiency, this invention reduces equipment operating time and energy consumption, reduces raw material waste, thereby lowering the production cost of metallized thin films and improving the market competitiveness of products. Detailed Implementation

[0039] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments.

[0040] Example 1

[0041] A multi-source synergistic evaporation method for capacitor metallization thin films includes the following steps:

[0042] S1. Multi-source evaporation: Multiple evaporation sources are used, and each evaporation source is temperature-controlled by an independent heating and control system, so that different metal materials can be stably evaporated at their respective optimal evaporation temperatures.

[0043] Multiple evaporation sources, including at least two of zinc, aluminum, and copper, are precisely configured in terms of quantity and location based on the composition and performance requirements of the desired metallized film. Each evaporation source is temperature-controlled through an independent heating control system to ensure that different metal materials can evaporate stably at their respective optimal evaporation temperatures. For example, the heating temperature of the zinc evaporation source is controlled at 600℃-700℃, the aluminum evaporation source at 1200℃-1400℃, and the copper evaporation source at 1083℃-1183℃. These temperature ranges can be fine-tuned according to the purity of the actual metal material and the requirements of the vapor deposition process.

[0044] S2. Collaborative control: Multiple high-precision film thickness sensors and composition analyzers are installed in the evaporation chamber to monitor the metal deposition thickness and composition changes on the film surface in real time. The sensors transmit data to the computer control system. The control system calculates the adjustment amount of the evaporation rate of each evaporation source according to the preset target film thickness and composition ratio, so as to realize the collaborative operation of each evaporation source.

[0045] When the zinc content in the film is detected to be lower than the target value, the control system automatically increases the heating power of the zinc evaporation source to increase the evaporation rate of zinc atoms; at the same time, it correspondingly reduces the evaporation rate of other evaporation sources to maintain the overall compositional balance. Through this real-time feedback and adjustment mechanism, the evaporation sources work collaboratively to ensure the uniformity of the metallized film thickness and the consistency of its composition.

[0046] The film thickness sensor selected in this invention can be the MicroProf series from FRT GmbH, Germany, for example. Model. This sensor continuously monitors the metal deposition thickness at different locations on the thin film surface during the vapor deposition process, with a measurement accuracy of ±1nm. Its working principle is based on optical interferometry. When a beam of light of a specific wavelength shines perpendicularly onto the thin film surface, part of the light is reflected at the upper surface of the film, while the other part is transmitted into the interior of the film and reflected again at the interface between the film and the substrate. These two reflected beams interfere, producing interference fringes. Since the optical path difference is related to the film thickness, by accurately measuring the position, number, and intensity changes of the interference fringes, and processing this information using a specific algorithm, the film thickness can be accurately calculated. The sensors are evenly distributed in different locations within the vapor deposition chamber to ensure comprehensive capture of the film thickness distribution, avoiding information deviations caused by single-point monitoring. For example, one sensor is placed every 10 cm horizontally and every 5 cm vertically, providing real-time monitoring of the film thickness from multiple dimensions, ensuring the comprehensiveness and accuracy of the data.

[0047] The component analyzer uses the INNOV-X Alpha-4000 handheld X-ray fluorescence spectrometer. Based on X-ray fluorescence spectroscopy, it can analyze the metal composition and proportions of each component on the thin film surface in real time, with a detection interval as fast as 0.1 seconds, ensuring timely reflection of dynamic changes in the film composition. Its working principle is as follows: The instrument's internal X-ray source emits high-energy X-rays. When these X-rays irradiate the thin film sample, they interact with the atoms in the sample. The energy of the X-rays is sufficient to knock electrons out of the inner-shell orbitals of the sample atoms, putting the atoms into an excited state. At this time, higher-energy electrons in the outer-shell orbitals rapidly jump to the vacant positions in the inner-shell orbitals. During this process, the atoms release excess energy, which is emitted as fluorescent X-rays. Due to the different electronic structures of atoms of different elements, the emitted fluorescent X-rays have specific energies. The Alpha-4000 analyzer detects the energy and intensity of these fluorescent X-rays, and through built-in analysis software and database comparison analysis, determines the types and proportions of various metal elements in the thin film. For example, when preparing zinc-aluminum composite metallized thin films, the component analyzer can monitor the content ratio of zinc and aluminum in the film in real time and transmit the data synchronously to the subsequent data processing and analysis module, providing key component data support for the entire collaborative control mechanism.

[0048] S3. Thin film pretreatment: After pretreatment of the substrate thin film, it is sent into the vapor deposition chamber through a high-precision thin film transfer device. The transfer device adopts constant tension control technology.

[0049] The pretreatment of the substrate film employs plasma cleaning technology to remove impurities, oil, and oxides from its surface, improving its surface activity and cleanliness, and enhancing the adhesion between the metal film and the substrate film. The pretreated substrate film is then fed into the evaporation chamber via a high-precision film transfer device. The constant tension control technology of this high-precision device ensures stable tension of the substrate film during transfer, preventing film vibration caused by tension fluctuations and ensuring uniform metal deposition.

[0050] S4. Evaporation chamber parameter control: precisely control the vacuum level and gas atmosphere within the evaporation chamber, maintaining the vacuum level at 10. -4 -10 -6 Within the range of Pa, reduce the interference of impurities in the air on the metal deposition process, and introduce an appropriate amount of inert gas or reactive gas as needed.

[0051] Simultaneously, an appropriate amount of inert gas (such as argon) or reactive gas (such as oxygen) can be introduced into the chamber as needed to regulate the deposition behavior of metal atoms and the microstructure of the thin film. For example, introducing an appropriate amount of oxygen can promote the formation of metal oxide thin films and improve the insulation properties and chemical stability of the films.

[0052] S5. After the evaporation is completed, turn off the heating source and introduce gas into the evaporation chamber, and allow the film to cool naturally to room temperature while maintaining a vacuum state.

[0053] When the computer control system detects that the content of a certain metal in the thin film deviates from the target value, it automatically adjusts the heating power of the corresponding evaporation source to change the evaporation rate of that metal atom, and at the same time adjusts the evaporation rate of other evaporation sources to maintain the overall composition balance.

[0054] Specifically, by simultaneously adjusting the evaporation rates of the target metal source and other sources, it is possible to quickly correct metal composition deviations to ensure film performance, maintain a stable total evaporation rate to ensure uniform film thickness, and at the same time, offset dynamic disturbances in the vapor deposition process and adapt to the needs of different stages, achieving precise control throughout the entire process and solving the problem of difficulty in balancing composition and film thickness in traditional multi-source vapor deposition.

[0055] The collaborative control includes a data processing and analysis module, which uses an adaptive weighted PID algorithm to calculate the adjustment amount of the evaporation rate for each evaporation source.

[0056] Specifically, by using dynamic weights, such as prioritizing film thickness in the early stages of evaporation and composition in the later stages, the control priority of film thickness uniformity and composition ratio is balanced, solving the problem that traditional algorithms cannot simultaneously meet multiple index requirements. The real-time adjustment capability of the PID algorithm, combined with adaptive parameter optimization, can quickly respond to disturbances in the evaporation process (such as vacuum fluctuations and changes in raw material purity), avoiding the accumulation of deviations and controlling film thickness deviation within ±3nm and composition deviation within ±1.5%. The algorithm can calculate the adjustment amount according to the characteristics of each evaporation source (such as the evaporation temperature and rate characteristics of different metals), ensuring the overall rate is stable and the composition ratio is accurate when multiple sources are linked, avoiding the overall imbalance caused by the adjustment of a single source, and ultimately improving the consistency and performance stability of the metallized film.

[0057] S21. Deviation quantification and weight allocation: The real-time data collected by the film thickness sensor and component analyzer are compared with the preset target value and quantified into two types of deviation values:

[0058] Film thickness deviation Δh: The difference between the actual film thickness and the target film thickness at a certain monitoring point, in nm;

[0059] Component deviation Δc n : The percentage difference between the actual content and the target content of the nth metal (n = 1, 2, ... N, where N is the number of evaporation sources).

[0060] Specifically, dynamic weights are assigned to the two types of deviations based on the thin film performance requirements:

[0061] When the film is in the initial stage of vapor deposition (thickness < 50% of the target value), the film thickness deviation weight ωh = 0.6, and the total weight of the composition deviation ωc = 0.4 (the deviation weights of each metal component are allocated according to the target proportion. For example, if zinc accounts for 30% in the zinc-aluminum composite film, then ωc1 = 0.4 × 0.3 = 0.12, and aluminum ωc2 = 0.4 × 0.7 = 0.28).

[0062] When the film approaches the target thickness (thickness ≥ 50% of the target value), it automatically switches to ωh = 0.3 and ωc = 0.7 to prioritize the accuracy of the composition.

[0063] S22, PID parameter adaptive adjustment, based on deviation value and weight, the algorithm calculates the output of proportional term (P), integral term (I), and derivative term (D) in real time:

[0064] Proportional term: K p ×(ω h ×Δh+Σ(ωc n ×Δc n )), where K p This is a proportionality coefficient that decreases linearly as the absolute value of the total deviation increases, ranging from 1.2 to 0.8, to avoid excessive adjustment that could cause oscillations.

[0065] Integral term: K i ×∫(ω h ×Δh+Σ(ωc n ×Δc n ))dt, integral coefficient K i The design incorporates anti-integral saturation; when the adjustment reaches the maximum adjustment range of the equipment, the heating power is reduced by ±20%, and integral accumulation stops.

[0066] Differential term: Kd×d(ω) h ×Δh+Σ(ωc n ×Δc n The differential coefficient Kd increases with the rate of change of the deviation, ranging from 0.3 to 0.6, thus enhancing the system's response speed to sudden disturbances.

[0067] S23. Calculation of evaporation rate adjustment amount, rate adjustment amount Δv for each evaporation source. n Calculated using the following formula:

[0068] Δv n =K pn ×[ωh×(Δh / H0)×v 0n +ωc n ×Δc n ×v 0n ]+K in ×∫[...]+Kd n ×d[...] / dt

[0069] in:

[0070] K pn K in Kd n The PID parameters for the nth evaporation source are preset with initial values ​​based on the metal type. For the aluminum evaporation source K... p =1.1, Zinc evaporation source K p =1.0);

[0071] H0 represents the target film thickness, in nm.

[0072] v 0n This represents the current baseline evaporation rate of the nth evaporation source, expressed in nm / s.

[0073] S24. Cooperative constraint correction: To avoid conflicts in the adjustment amounts of various evaporation sources, and to prevent fluctuations in the total rate due to significant increases or decreases, cooperative constraint conditions are introduced:

[0074] The total evaporation rate change rate is ≤ ±5% / s to ensure film uniformity;

[0075] The adjusted proportions of each metal component must satisfy 0 < c. n <100%, avoid metal content being zero;

[0076] If the calculation results violate the constraints, the adjustment amount is redistributed using the least squares method to minimize the total deviation while satisfying the constraints.

[0077] It should be noted that, taking zinc-aluminum composite film evaporation as an example, the target film thickness is 100nm, and the zinc content is 30%.

[0078] Real-time detection: film thickness 60nm (Δh=+5nm), zinc content 28% (Δc1=-2%), aluminum content 72% (Δc2=+2%);

[0079] Weighting: Since thickness = 60% of the target value, ω h =0.3, ωc1=0.7×0.3=0.21, ωc2=0.7×0.7=0.49;

[0080] Deviation weighted value: 0.3×5+0.21×(-2)+0.49×2=1.5-0.42+0.98=2.06;

[0081] Calculate the adjustment amounts: zinc evaporation source Δv1 = +8% (increase rate), aluminum evaporation source Δv2 = -5% (decrease rate), total rate change rate 3% (meets constraints).

[0082] Using this algorithm, the system can complete an adjustment calculation within 50ms, ensuring coordinated response of each evaporation source, controlling the film thickness uniformity deviation within ±3nm, and the composition deviation ≤±1.5%.

[0083] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it.

Claims

1. A multi-source synergistic evaporation method for capacitor metallization thin films, characterized in that, Includes the following steps: S1. Multi-source evaporation: Multiple evaporation sources are used, and each evaporation source is temperature-controlled by an independent heating and control system, so that different metal materials can be stably evaporated at their respective optimal evaporation temperatures. S2. Collaborative control: Multiple high-precision film thickness sensors and composition analyzers are set in the vapor deposition chamber to monitor the metal deposition thickness and composition changes on the film surface in real time. The sensors transmit data to the computer control system. The control system calculates the evaporation rate adjustment of each evaporation source according to the preset target film thickness and composition ratio through the algorithm, so as to realize the collaborative work of each evaporation source. S3. Thin film pretreatment: After pretreatment of the substrate thin film, it is sent into the vapor deposition chamber through a high-precision thin film transfer device. The transfer device adopts constant tension control technology. S4. Evaporation chamber parameter control: precisely control the vacuum level and gas atmosphere within the evaporation chamber, maintaining the vacuum level at 10. -4 -10 -6 Within the range of Pa, an appropriate amount of inert gas or reactive gas may be introduced as needed; S5. After the evaporation is completed, turn off the heating source and introduce gas into the evaporation chamber, and allow the film to cool naturally to room temperature while maintaining a vacuum state.

2. The multi-source synergistic evaporation method for capacitor metallization thin films according to claim 1, characterized in that, The plurality of evaporation sources include at least two of zinc evaporation sources, aluminum evaporation sources, and copper evaporation sources. The heating temperature of the zinc evaporation source is controlled at 600℃-700℃, the heating temperature of the aluminum evaporation source is controlled at 1200℃-1400℃, and the heating temperature of the copper evaporation source is controlled at 1083℃-1183℃.

3. The multi-source synergistic evaporation method for capacitor metallization thin films according to claim 1, characterized in that, When the computer control system detects that the content of a certain metal in the film deviates from the target value, it automatically adjusts the heating power of the corresponding evaporation source to change the evaporation rate of the metal atom, and at the same time adjusts the evaporation rate of other evaporation sources to maintain the overall composition balance.

4. The multi-source synergistic evaporation method for capacitor metallization thin films according to claim 1, characterized in that, The collaborative control includes a data processing and analysis module, which uses an adaptive weighted PID algorithm to calculate the adjustment amount of the evaporation rate for each evaporation source.

5. The multi-source synergistic evaporation method for capacitor metallization thin films according to claim 4, characterized in that, S21. Deviation quantification and weight allocation: The real-time data collected by the film thickness sensor and component analyzer are compared with the preset target value and quantified into two types of deviation values: Film thickness deviation Δh: The difference between the actual film thickness and the target film thickness at a certain monitoring point, in nm; Component deviation Δc n : The percentage difference between the actual content and the target content of the nth metal.

6. The multi-source synergistic evaporation method for capacitor metallization thin films according to claim 5, characterized in that, S22, PID parameter adaptive adjustment, based on deviation value and weight, the algorithm calculates the output of proportional term (P), integral term (I), and derivative term (D) in real time: Proportional term: K p ×(ω h ×Δh+Σ(ωc n ×Δc n )), where K p This is a proportionality coefficient that decreases linearly as the absolute value of the total deviation increases, ranging from 1.2 to 0.8, to avoid excessive adjustment that could cause oscillations. Integral term: K i ×∫(ω h ×Δh+Σ(ωc n ×Δc n ))dt, integral coefficient K i The design incorporates anti-integral saturation; when the adjustment reaches the maximum adjustment range of the equipment, the heating power is reduced by ±20%, and integral accumulation stops. Differential term: Kd×d(ω) h ×Δh+Σ(ωc n ×Δc n The differential coefficient Kd increases with the rate of change of the deviation, ranging from 0.3 to 0.6, thus enhancing the system's response speed to sudden disturbances.

7. The multi-source synergistic evaporation method for capacitor metallization thin films according to claim 6, characterized in that, S23. Calculation of evaporation rate adjustment amount, rate adjustment amount Δv for each evaporation source. n Calculated using the following formula: Δv n =K pn ×[ωh×(Δh / H0)×v 0n +ωc n ×Δc n ×v 0n ]+K in ×∫[...]+Kd n ×d[...] / dt in: K pn K in Kd n The PID parameters for the nth evaporation source are preset with initial values ​​based on the metal type. For the aluminum evaporation source K... p =1.1, Zinc evaporation source K p =1.0); H0 represents the target film thickness, in nm. v 0n This represents the current baseline evaporation rate of the nth evaporation source, expressed in nm / s.

8. The multi-source synergistic evaporation method for capacitor metallization thin films according to claim 7, characterized in that, S24, Cooperative Constraint Modification To avoid conflicts in the adjustment amounts of various evaporation sources, and to prevent fluctuations in the overall rate due to significant increases or decreases, a cooperative constraint condition is introduced: The total evaporation rate change rate is ≤ ±5% / s to ensure film uniformity; The adjusted proportions of each metal component must satisfy 0 < c. n <100%, avoid metal content being zero; If the calculation results violate the constraints, the adjustment amount is redistributed using the least squares method to minimize the total deviation while satisfying the constraints.

9. The multi-source synergistic evaporation method for capacitor metallization thin films according to claim 1, characterized in that, The pretreatment of the substrate film employs plasma cleaning technology to remove impurities, oil, and oxides from the surface of the substrate film. The constant tension control technology of the high-precision thin film transmission device can ensure that the tension of the substrate film is stable during transmission, and avoid film shaking caused by tension fluctuations.

10. A metallized thin film, characterized in that, It is prepared by the multi-source synergistic evaporation deposition method for capacitor metallization thin films according to any one of claims 1-9.