Control method of magnetron assembly, lower computer and semiconductor process equipment

Abstract

The embodiment of the invention provides a control method of a magnetron assembly, a lower computer and semiconductor process equipment, and relates to the technical field of semiconductors, and the method comprises the steps: obtaining a rotation type parameter corresponding to a target step in a process formula; the target step is any process step in which the magnetron assembly needs to be controlled in the process formula. Determining a control parameter set of the target step based on a parameter generation strategy corresponding to the rotation type parameter; the control parameter set comprises a first control parameter of a user-defined dimension and a second control parameter of a fixed dimension; wherein the first control parameter of the user-defined dimension refers to a control parameter set by a user in a user-defined mode, and the second control parameter of the fixed dimension refers to a control parameter of a fixed numerical value. And issuing control information to the magnetron assembly according to the control parameter set so as to control the magnetron assembly to rotate according to the control parameters in the control parameter set. The control method is higher in flexibility, the operation steps of the magnetron assembly can be simplified, and the response efficiency of the magnetron assembly is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a magnetron assembly control method, a lower computer and a semiconductor process equipment. BACKGROUND

[0002] At present, in the field of semiconductor technology, the process steps of the process recipe will control the magnetron assembly, and the particles on the surface of the target material will be sputtered out by the magnetron assembly and deposited on the surface of the wafer to form a thin film. Among them, the magnetron assembly includes a driving shaft, a driven shaft, a main arm, a slave arm and a magnetron, the driving shaft is used to drive the main arm to rotate, the driven shaft is used to drive the slave arm to rotate, and the magnetron is arranged on the slave arm. The rotation mode of the magnetron assembly will directly affect the distribution of particles on the wafer surface.

[0003] In the prior art, a fixed control parameter set is set in the controller module of the magnetron assembly in advance. The lower computer sends the identification of the parameter set set in the process step to the magnetron assembly, and the magnetron assembly looks up the control parameter set corresponding to the identification based on each control parameter set set in the controller module, so as to control the magnetron assembly to rotate. In this way, the user can only use the fixed control parameter set in the process step, the control limitation is high, and the magnetron assembly needs to find the control parameter set according to the identification, which will reduce the response efficiency of the magnetron assembly. SUMMARY

[0004] In view of the above problems, the present application is proposed to provide a magnetron assembly control method, a lower computer and a semiconductor process equipment which can overcome the above problems or at least partially solve the above problems.

[0005] In a first aspect, the present application discloses a magnetron assembly control method applied to a lower computer, and the method comprises:

[0006] Obtaining a rotation type parameter corresponding to a target step in a process recipe; the target step is any process step in the process recipe which needs to control the magnetron assembly;

[0007] Determining a control parameter set of the target step based on a parameter generation strategy corresponding to the rotation type parameter; the control parameter set comprises a first control parameter of a custom dimension and a second control parameter of a fixed dimension; wherein the first control parameter of the custom dimension is a control parameter defined by the user, and the second control parameter of the fixed dimension is a control parameter with a fixed value;

[0008] According to the control parameter set, control information is sent to the magnetron assembly to control the magnetron assembly to rotate according to the control parameters in the control parameter set.

[0009] In a second aspect, the embodiments of the present application disclose a control method of a magnetron assembly, applied to an upper computer, and the method further comprises:

[0010] In response to a process recipe editing operation, a recipe input interface is displayed, and the recipe input interface comprises a rotation type parameter input area and an input area of a first control parameter of a self-defined dimension;

[0011] The process recipe input by the recipe input interface is received, and the process recipe is sent to a lower computer, so that the magnetron assembly is controlled by the lower computer according to the method of the first aspect.

[0012] In a third aspect, the embodiments of the present application disclose a lower computer, which is used to implement the method of the first aspect.

[0013] In a fourth aspect, the embodiments of the present application disclose a semiconductor process equipment, which comprises a reaction chamber provided with a magnetron assembly, an upper computer and the lower computer of the third aspect, and the upper computer provides the process recipe for the lower computer according to the method of the second aspect.

[0014] The embodiments of the present application have the following advantages: the rotation type parameter corresponding to a target step in the process recipe is obtained, and the target step is any process step in the process recipe that needs to control the magnetron assembly. The control parameter set of the target step is determined based on a parameter generation strategy corresponding to the rotation type parameter, and the control parameter set comprises a first control parameter of a self-defined dimension and a second control parameter of a fixed dimension. The first control parameter of the self-defined dimension is a control parameter defined by a user, and the second control parameter of the fixed dimension is a control parameter with a fixed value. Control information is issued to the magnetron assembly according to the control parameter set, so as to control the magnetron assembly to rotate according to the control parameters in the control parameter set. The user can directly define the required rotation type parameter in the process recipe, and the user can also define the control parameter. The magnetron assembly can rotate according to the arbitrary first control parameter defined by the user in the rotation mode represented by the required rotation type, and the control method is more flexible. The control parameter set is generated by the lower computer, and the control information is directly issued according to the parameter set, so that it is not necessary to pre-set the fixed control parameter set in the controller module of the magnetron assembly, and the magnetron assembly does not need to search for the control parameter set according to the identifier and generate the corresponding control information. Therefore, the operation steps of the magnetron assembly can be simplified, and the response efficiency of the magnetron assembly is improved. BRIEF DESCRIPTION OF DRAWINGS

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the description of the embodiments of the present application. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained from these drawings without any creative effort.

[0016] Figure 1 is a schematic diagram of a hardware structure of a magnetron assembly according to an embodiment of the present application;

[0017] Figure 2 is a step flow chart of a control method of a magnetron assembly according to an embodiment of the present application;

[0018] Figure 3 is a schematic diagram of a rotation type parameter according to an embodiment of the present application;

[0019] Figure 4 is a schematic diagram of a magnetron assembly after angle adjustment according to an embodiment of the present application;

[0020] Figure 5 is a schematic diagram of a processing process according to an embodiment of the present application;

[0021] Figure 6 is another schematic diagram of a processing process according to an embodiment of the present application;

[0022] Figure 7 is still another schematic diagram of a processing process according to an embodiment of the present application;

[0023] Figure 8 is still another schematic diagram of a processing process according to an embodiment of the present application;

[0024] Figure 9 is a step flow chart of another control method of a magnetron assembly according to an embodiment of the present application. DETAILED DESCRIPTION

[0025] In order to make the above-mentioned purposes, features and advantages of the present application more apparent and easy to understand, the following will further describe the present application in combination with the drawings and specific embodiments. Obviously, the described embodiments are only some embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art belong to the scope of protection of the present application.

[0026] Physical Vapor Deposition (PVD) is a technology that converts target material into particles under vacuum conditions, for example, by physically vaporizing the surface of the target material source into gaseous atoms or molecules, or partially ionizing into ions. Then let these gaseous particles deposit on the substrate surface to form a thin film with certain special functions. In semiconductor processes, the substrate can be a wafer, which is a core material in semiconductor manufacturing, usually made of high-purity single crystal silicon. After a series of complex processing processes, the wafer surface will be etched into a microcircuit structure, and finally cut into individual chips.

[0027] In one way of implementing PVD, a magnetron assembly is used to drive the magnetron to rotate so that the sputtered particles are uniformly distributed on the wafer. In the process flow of PVD deposition of thin films, the process chamber is first pumped to a high vacuum state. Then, the target material is installed on the magnetron. The wafer is pretreated to remove surface impurities and moisture to improve the adhesion of the thin film. Introduce working gas (for example, argon) into the process chamber, and fix the wafer on the support in the deposition cavity. The magnetron in the working state will apply a strong magnetic field to the surface of the target, with the magnetic field direction parallel to the surface of the target. At the same time, an electric field perpendicular to the surface of the target is applied, which ionizes the gas near the surface of the target to form a plasma. The plasma is accelerated by the electric field to obtain high energy, and flies to the target surface at a very high speed, and hits the target, causing the target surface to produce gaseous particles and sputter from the target surface, and finally deposit on the wafer surface. During the process, the rotation mode used by the magnetron assembly will directly affect the distribution of particles on the wafer surface. If the rotation mode used by the magnetron assembly does not meet the process requirements, it may cause poor uniformity of the deposited thin film on the wafer surface, thereby causing the wafer to be scrapped, or affecting the stress of the thin film, increasing the risk of wafer scrapping.

[0028] In the prior art, a fixed set of control parameters is preset in the controller module of the magnetron assembly, and the user can only select one from the fixed set of control parameters when editing the process recipe. The user can only control the magnetron assembly to form a fixed rotation track corresponding to the set of control parameters. When executing the process recipe, the controller module needs to call the set of control parameters selected by the user to control the magnetron assembly to rotate according to the set of control parameters. In this way, the preset needs to be made in the PLC, and the user can only set a fixed set of control parameters in the process step, and cannot control the magnetron assembly to rotate according to any set of control parameters. Moreover, the set of control parameters preset in the controller module in the prior art has a limited rotation angle, which cannot flexibly control the magnetron to rotate at an angle, and cannot meet the process requirements for multi-radius movement of the magnetron. Therefore, the present application provides a control method for a magnetron assembly to overcome the above problems or at least partially solve the above problems.

[0029] First, the magnetron assembly controlled by the embodiments of the present invention will be described. Figure 1 This is a schematic diagram of the hardware structure of a magnetron assembly according to an embodiment of the present invention, as shown below. Figure 1 As shown, the magnetron assembly includes a driven shaft 1, a driving shaft 2, a main arm 3, a slave arm 4, and a magnetron 5. The magnetron assembly can also be called a magnetron motion mechanism. The driven shaft 1, driving shaft 2, main arm 3, and slave arm 4 drive the magnetron 5 to rotate. The main arm 3 can also be called the upper arm, and the slave arm 4 can also be called the lower arm. The driving shaft 2 drives the main arm 3 to rotate. The slave arm 4 can revolve around the main arm 3, or it can rotate on its own axis controlled by the driven shaft 1. The magnetron 5 is fixed to the slave arm 4 and rotates with it.

[0030] In this embodiment of the invention, the magnetron assembly possesses multiple dimensions of control parameters, forming a control parameter set. Different control parameter sets can control the magnetron assembly to rotate in different rotation modes. Specifically, these multiple dimensions of control parameters include the main arm speed, the slave arm speed ratio, and the slave arm rotation angle. The main arm speed is used to control the speed at which the drive shaft 2 drives the main arm 3 to rotate. The slave arm speed ratio is used to control the speed at which the driven shaft 1 drives the slave arm 4 to rotate (i.e., the slave arm speed). The slave arm speed ratio characterizes the ratio of the main arm speed to the slave arm speed, and can be taken as the slave arm speed by multiplying the main arm speed by the reciprocal of the slave arm speed ratio. For example, when the slave arm speed ratio is 1, the slave arm speed is the same as the main arm speed, and the slave arm and the main arm are relatively stationary. Correspondingly, the main arm 3 and the slave arm 4 rotate synchronously. Specifically, when the speed is greater than 0, the main arm 3 and the slave arm 4 rotate synchronously in the forward direction; when the speed is less than 0, the main arm 3 and the slave arm 4 rotate synchronously in the reverse direction, thereby achieving a forward and reverse rotation mode. When the slave arm speed ratio is not 1, the slave arm speed is different from the master arm speed, and there is a speed difference between the master arm 3 and the slave arm 4. At this time, the master arm 3 drives the slave arm 4 to revolve around the sun, while the slave arm 4 rotates around its own center, realizing a planetary trajectory rotation mode. When the speed ratio is different, the speed difference between the master arm 3 and the slave arm 4 is different, which will correspond to different planetary trajectories.

[0031] Furthermore, with different rotation angles of the slave arm, the included angle between the master arm and slave arm on the horizontal plane varies, resulting in different radii of the circular trajectory formed when the magnetron 5 rotates. The angle of rotation of the slave arm is called the slave arm rotation angle, which determines the size of the radius. Therefore, by adjusting the slave arm rotation angle, a multi-radius rotation mode can be achieved. The slave arm rotation angle can range from 0° to 180° to achieve rotation of any radius. When the slave arm rotation angle is 0°, the magnetron is on the outermost circle with the largest rotation radius; when the slave arm rotation angle is 180°, the magnetron is on the innermost circle with the smallest rotation radius. The control method of this magnetron assembly will be described in detail below.

[0032] Figure 2 is a step flow chart of a control method of a magnetron assembly provided by an embodiment of the present application. The method is applied to a lower machine, such as Figure 2 As shown in the figure, the control method of the magnetron assembly can include the following steps:

[0033] Step 101, obtaining a rotation type parameter corresponding to a target step in a process recipe; the target step is any process step in the process recipe that needs to control the magnetron assembly.

[0034] A process recipe includes multiple process steps. During the execution of the process recipe, the lower machine sends control information to components in the semiconductor process equipment according to the settings of the process steps in the process recipe. In the embodiment of the present application, the lower machine is connected with the magnetron assembly, and the lower machine can execute the process recipe through internal control software to control the execution process of the process recipe. The lower machine is also connected with the upper machine, and the upper machine provides a user interface for the user, and the user can edit the process recipe in the user interface. The upper machine can send the process recipe edited by the user to the lower machine.

[0035] Step 102, determining a control parameter set of the target step based on a parameter corresponding to the rotation type parameter; the control parameter set includes a first control parameter of a custom dimension and a second control parameter of a fixed dimension; wherein the first control parameter of the custom dimension refers to a control parameter set by the user, and the second control parameter of the fixed dimension refers to a control parameter with a fixed value.

[0036] For the process step in the process recipe that needs to control the magnetron assembly, the process step can be taken as the target step, and then the rotation type parameter and the first control parameter of the custom dimension set for the target step are obtained.

[0037] Among them, the rotation type parameter is used to represent the rotation mode set by the user for the target step, the first control parameter represents the control parameter customized by the user for the target step, and the custom dimension refers to the type of control parameter that can be customized by the user under the rotation mode represented by the rotation type parameter.

[0038] In the embodiment of the present application, different types of rotation parameters are provided, and the types of control parameters that can be set by the user are different, that is, the custom dimensions are different. Correspondingly, different rotation type parameters correspond to different parameter generation strategies, and the lower machine can automatically generate a control parameter set required for controlling the magnetron assembly, including the first control parameter defined by the user and the second control parameter of the fixed dimension, according to the rotation type parameter of the target step. The fixed dimension is a parameter dimension other than the custom dimension, and the custom dimension corresponding to different rotation type parameters is different, so the fixed dimension corresponding to different rotation type parameters is also different. The lower machine automatically completes based on the rotation type parameter to obtain the final required control parameter set.

[0039] In step 103, control information is issued to the magnetron assembly according to the control parameter set to control the magnetron assembly to rotate according to the control parameters in the control parameter set.

[0040] In the embodiment of the present application, the control information is used to control the magnetron assembly to adjust the currently used control parameter to the control parameter in the control parameter set, and then control the magnetron assembly to rotate according to the control parameter in the control parameter set.

[0041] In summary, the control method of the magnetron assembly provided in the embodiment of the present application acquires the rotation type parameter corresponding to the target step in the process recipe. The target step is any process step in the process recipe that needs to control the magnetron assembly. The control parameter set of the target step is determined based on the parameter generation strategy corresponding to the rotation type parameter. The control parameter set includes the first control parameter of the custom dimension and the second control parameter of the fixed dimension. The first control parameter of the custom dimension is the control parameter defined by the user, and the second control parameter of the fixed dimension is the control parameter of the fixed value. Control information is issued to the magnetron assembly according to the control parameter set to control the magnetron assembly to rotate according to the control parameters in the control parameter set. The user can directly define the required rotation type parameter in the process recipe, and the user can also define the control parameter. By defining the control parameter, the magnetron assembly can rotate according to the first control parameter defined by the user in the rotation mode represented by the required rotation type, and the control method is more flexible. The control parameter set is generated by the lower machine, and the control information is issued directly according to the parameter set, so it is not necessary to pre-set the fixed control parameter set in the controller module of the magnetron assembly, and the magnetron assembly does not need to find the control parameter set according to the identification and generate the corresponding control information. Therefore, the operation steps of the magnetron assembly can be simplified, and the response efficiency of the magnetron assembly is improved.

[0042] In one embodiment, the step of determining the control parameter set of the target step according to the parameter generation strategy corresponding to the rotation type parameter specifically includes:

[0043] In step 1021, the control parameters customized by the user for the target step are acquired to obtain the first control parameters corresponding to the rotation type parameter.

[0044] In step 1022, the strategy is generated according to the parameters, the control parameters of the fixed dimension corresponding to the rotation type parameter are acquired to obtain the second control parameters.

[0045] In step 1023, the control parameter set of the target step is generated based on the first control parameters and the second control parameters.

[0046] In the embodiment of the application, the rotation type parameter can be a MagnetType parameter, and the rotation type parameter can be defined in the target step, and the user can customize the specific value of the rotation type parameter as needed. The process step in which the MagnetType parameter is defined can be taken as the target step. When the first control parameters are acquired, the lower computer can determine the type of the first control parameters corresponding to the rotation type parameter based on the rotation type parameter defined in the target step, that is, determine which parameters of the customized dimension the rotation type parameter specifically corresponds to. Then, the parameters of the customized dimension set for the target step are acquired.

[0047] The control parameters of the fixed dimension corresponding to the rotation type parameter can be acquired as the second control parameters according to the acquisition mode in the parameter generation strategy corresponding to the rotation type parameter. Further, all the control parameters included in the first control parameters and all the control parameters included in the second control parameters can be taken as the control parameter set of the target step. The control parameters of the customized dimension corresponding to the rotation type parameter can be one or more, the control parameters of the fixed dimension corresponding to the rotation type parameter can be one or more, and the number of control parameters included in the control parameter set obtained for the target steps set with different rotation type parameters can be the same.

[0048] In the embodiment of the application, the control parameters customized by the user for the target step are acquired to obtain the first control parameters corresponding to the rotation type parameter. The control parameters of the fixed dimension corresponding to the rotation type parameter are acquired according to the parameter generation strategy to obtain the second control parameters. The control parameter set of the target step is generated based on the first control parameters and the second control parameters. In this way, the control parameters of the fixed dimension are automatically determined based on the parameter generation strategy corresponding to the rotation type parameter, and the final required control parameter set is generated in combination with the first control parameters customized by the user. The parameters of the fixed dimension in the rotation mode required by the user are completed, so that the user only needs to manually edit the first control parameters for the process recipe, and the difficulty of manual operation and the complexity of process recipe editing can be reduced.

[0049] In an embodiment, when the rotation type parameter is a first type parameter, the first control parameter comprises a main arm rotation speed, when the rotation type parameter is a second type parameter, the first control parameter comprises a slave arm rotation speed ratio and the main arm rotation speed, and when the rotation type parameter is a third type parameter, the first control parameter comprises the main arm rotation speed and a slave arm rotation angle. Accordingly, the step of obtaining the fixed-dimension control parameter corresponding to the rotation type parameter according to the parameter generation strategy comprises:

[0050] Step 1021a, if the rotation type parameter is the first type parameter, a default slave arm rotation speed ratio corresponding to a rotation speed ratio dimension and a default slave arm rotation angle corresponding to a rotation angle dimension are obtained respectively to obtain the fixed-dimension control parameter generated by the parameter generation strategy corresponding to the first type parameter.

[0051] Step 1021b, if the rotation type parameter is the second type parameter, the default slave arm rotation angle is obtained to obtain the fixed-dimension control parameter generated by the parameter generation strategy corresponding to the second type parameter.

[0052] Step 1021c, if the rotation type parameter is the third type parameter, the default slave arm rotation speed ratio is obtained to obtain the fixed-dimension control parameter generated by the parameter generation strategy corresponding to the third type parameter.

[0053] The first type parameter is used to represent the forward and reverse rotation mode, the second type parameter is used to represent the planetary trajectory rotation mode, and the third type parameter is used to represent the multi-radius rotation mode. For example, Figure 3 is a schematic diagram of a rotation type parameter provided by an embodiment of the present application, as Figure 3 shown, the first type parameter can be represented as ConstSpeed, the second type parameter can be represented as Profile, and the third type parameter can be represented as TuningAngle.

[0054] The user can set the rotation type parameter as a first type parameter in the process recipe for the target step when the user needs to rotate in the positive and negative rotation mode. The slave arm rotation speed ratio and the slave arm rotation angle in the positive and negative rotation mode are default values. Therefore, in the case where the rotation type parameter is the first type parameter, the custom dimension that can be set by the user autonomously is the rotation speed dimension, i.e., the user can control the magnetron assembly to rotate in the positive and negative rotation mode, and control the magnetron assembly to rotate at an arbitrary rotation speed to form a positive and negative rotation track. Accordingly, the default slave arm rotation speed ratio and the default slave arm rotation angle can be 1 and 0°, respectively, and the second control parameter is the slave arm rotation speed ratio = 1 and the slave arm rotation angle = 0°. In this way, by obtaining the default slave arm rotation speed ratio and the default slave arm rotation angle in the case where the rotation type parameter is the first type parameter, it is ensured that the magnetron assembly rotates in the positive and negative rotation mode when subsequent control is performed based on the generated control parameter set. Accordingly, in this case, the obtained default slave arm rotation speed ratio and the default slave arm rotation angle are the fixed-dimension control parameters generated by the parameter generation strategy corresponding to the first type parameter.

[0055] In the case where the rotation type parameter is the first type parameter, the parameter generation strategy corresponding to the rotation type parameter includes: obtaining the default slave arm rotation speed ratio and the default slave arm rotation angle corresponding to the rotation speed ratio dimension and the rotation angle dimension, respectively, and combining the default slave arm rotation speed ratio, the default slave arm rotation angle, and the first control parameter to form a control parameter set. Exemplarily, the control parameter set is {user-defined main arm rotation speed, slave arm rotation speed ratio 1, slave arm rotation angle 0°}. It should be noted that, in the multi-radius rotation mode, the user can define the main arm rotation speed and any slave arm rotation angle to rotate at a slave arm rotation speed ratio of 1. Therefore, in the positive and negative rotation mode, the default slave arm rotation angle is directly used.

[0056] Further, the user can set the rotation type parameter as a second type parameter in the process recipe for the target step when the user needs to rotate in the planetary track rotation mode. The slave arm rotation angle in the planetary track rotation mode is a default value. Therefore, in the case where the rotation type parameter is the second type parameter, the custom dimension that can be set by the user autonomously is the rotation speed dimension and the rotation speed ratio dimension, i.e., the user can control the magnetron assembly to rotate in the planetary track rotation mode, and control the magnetron assembly to rotate in the planetary rotation track at an arbitrary rotation speed and an arbitrary rotation speed ratio. Accordingly, the second control parameter is the slave arm rotation angle = 0°. In this way, by obtaining the default slave arm rotation angle in the case where the rotation type parameter is the second type parameter, it is ensured that the magnetron assembly rotates in the planetary track rotation mode when subsequent control is performed based on the generated control parameter set.

[0057] In the case that the rotation type parameter is the second type parameter, the parameter generation strategy corresponding to the rotation type parameter comprises: obtaining a default slave arm rotation angle corresponding to the rotation angle dimension, and generating a control parameter set by combining the default slave arm rotation angle and the first control parameter. For example, the control parameter set is {user-defined main arm rotation speed, user-defined slave arm rotation speed ratio, slave arm rotation angle 0°}. Correspondingly, in this case, the obtained default slave arm rotation angle is the fixed-dimension control parameter generated by the parameter generation strategy corresponding to the second type parameter.

[0058] When the user needs to rotate in the multi-radius rotation mode in the target step, the user can set the rotation type parameter as the third type parameter in the process recipe for the target step. In the multi-radius rotation mode, the control slave arm rotation speed ratio is a default value. Therefore, in the case that the rotation type parameter is the third type parameter, the user can set the user-defined dimension as the rotation speed dimension and the rotation angle dimension, that is, the user can control the magnetron assembly to rotate in the multi-radius rotation mode, and achieve the user's desired arbitrary rotation speed and arbitrary rotation angle, thereby forming a multi-radius rotation track. Correspondingly, the second control parameter can be: slave arm rotation speed ratio = 1. In this way, by obtaining the default slave arm rotation speed ratio in the case that the rotation type parameter is the third type parameter, it is ensured that the magnetron assembly can rotate in the multi-radius rotation mode based on the generated control parameter set. In the case that the rotation type parameter is the third type parameter, the parameter generation strategy corresponding to the rotation type parameter comprises: obtaining a default slave arm rotation speed ratio corresponding to the rotation speed ratio dimension, and generating a control parameter set by combining the default slave arm rotation speed ratio and the first control parameter. For example, the control parameter set is {user-defined main arm rotation speed, slave arm rotation speed ratio 1, user-defined slave arm rotation angle}. Correspondingly, in this case, the obtained default slave arm rotation speed ratio is the fixed-dimension control parameter generated by the parameter generation strategy corresponding to the third type parameter.

[0059] Meanwhile, in the embodiment of the present application, the second control parameter can be obtained by obtaining the corresponding default value according to the rotation type parameter, thereby ensuring the parameter acquisition efficiency of the lower computer to a certain extent.

[0060] In an embodiment, the target step defines all the user-defined control parameters of the dimension. Correspondingly, the step of obtaining the first control parameter corresponding to the rotation type parameter by obtaining the control parameter set defined by the user for the target step comprises:

[0061] Step 1021a: obtaining the first control parameter based on all the user-defined control parameters of the dimension defined in the target step.

[0062] In the present implementation, the rotation type parameter and the control parameters of all the custom dimensions corresponding to the rotation type parameter are defined in the target step, that is, all the control parameters included in the first control parameter are directly defined in the target step. Specifically, in the case of the rotation type parameter being ConstSpeed, the main arm rotating speed is defined in the target step, in the case of the rotation type parameter being Profile, the main arm rotating speed and the slave arm speed ratio are defined in the target step, and in the case of the rotation type parameter being TuningAngle, the main arm rotating speed and the slave arm rotating angle are defined in the target step.

[0063] Correspondingly, the lower computer can directly read the rotation type parameter defined in the target step. When the user edits the target step of the process recipe, the user will often define the parameters of the custom dimensions corresponding to the rotation type parameter according to the rotation type parameter to be set. Correspondingly, in the case of the rotation type parameter defined in the target step being the first type parameter, the lower computer reads the main arm rotating speed from the target step as the first control parameter. In the case of the rotation type parameter defined in the target step being the second type parameter, the lower computer reads the slave arm rotating speed ratio and the main arm rotating speed from the target step as the first control parameter. In the case of the rotation type parameter defined in the target step being the third type parameter, the lower computer reads the main arm rotating speed and the slave arm rotating angle from the target step as the first control parameter. That is, the first control parameter can be obtained by reading all the control parameters of the custom dimensions in the target step. In the present embodiment, the lower computer can obtain the rotation type parameter and the first control parameter by directly reading the parameters from the target step, and the parameter acquisition efficiency is high.

[0064] It should be noted that in the case of the control parameter in the read first control parameter being empty, it can be considered that the user needs to set the control parameter to a default preset value this time. Correspondingly, the preset value set for the control parameter can be directly used as the specific value of the control parameter. The preset value can be a commonly used value set based on process requirements.

[0065] In an embodiment, the target step defines the control parameter of the first custom dimension. Correspondingly, the step of obtaining the control parameter custom-set by the user for the target step to obtain the first control parameter corresponding to the rotation type parameter specifically includes:

[0066] Step 1021b, obtaining the third control parameter based on the control parameter of the first custom dimension defined in the target step.

[0067] Step 1021c, if the number of custom dimensions corresponding to the rotation type parameter is 1, the third control parameter is used as the first control parameter.

[0068] In step 1021d, if the number of custom dimensions corresponding to the rotation type parameter is greater than 1, a control parameter of a second custom dimension corresponding to the third control parameter is searched from a parameter correspondence relationship set by the user for the process recipe; and the third control parameter and the control parameter of the second custom dimension corresponding thereto are taken as the first control parameter.

[0069] In the present implementation, a rotation type parameter and a control parameter of a first custom dimension corresponding to the rotation type parameter are defined in the target step, wherein the control parameter of the first custom dimension is a control parameter of one custom dimension corresponding to the rotation type parameter. When the number of custom dimensions corresponding to the rotation type parameter is 1, the control parameter of the first custom dimension is a control parameter of all custom dimensions corresponding to the rotation type parameter; and when the number of custom dimensions corresponding to the rotation type parameter is greater than 1, the control parameter of the first custom dimension is a control parameter of part of custom dimensions corresponding to the rotation type parameter.

[0070] For convenience of description, the control parameter of the first custom dimension is referred to as a third control parameter. The third control parameter can be obtained by reading, from the target step, a control parameter of a first custom dimension corresponding to a rotation type parameter defined in the target step. Specifically, when the rotation type parameter is ConstSpeed, the number of custom dimensions corresponding to the rotation type parameter is 1, and accordingly, the third control parameter is a control parameter of all custom dimensions corresponding to the rotation type parameter. The control parameter of the first custom dimension corresponding to the rotation type parameter defined in the target step is a main arm rotating speed, and the third control parameter read from the target step (i.e., the main arm rotating speed) can be taken as the first control parameter.

[0071] In the case that the rotation type parameter is Profile or Tuning Angle, the number of the custom dimensions corresponding to the rotation type parameter is greater than 1, and accordingly, the third control parameter is the control parameter of one custom dimension corresponding to the rotation type parameter, and thus the control parameter of the second custom dimension corresponding to the third control parameter can be found from the parameter correspondence. The second custom dimension is a dimension other than the first custom dimension among the custom dimensions corresponding to the rotation type parameter. Accordingly, the third control parameter and the control parameter of the second custom dimension corresponding to the third control parameter found are the control parameters of all the custom dimensions corresponding to the rotation type parameter, and thus the complete first control parameter is obtained. The parameter correspondence can be edited by the user for the process recipe. For example, the host computer can display a relationship input interface for the user to edit the parameter correspondence for the process recipe. For example, the relationship input interface can include prompts such as "Please output the first custom dimension parameter here" and "Please output the corresponding second custom dimension parameter here". The user can input the control parameter of the first custom dimension used in the process recipe and the control parameter of the second custom dimension that needs to be set corresponding to the control parameter of the first custom dimension in the relationship input interface. The host computer receives the control parameter of the first custom dimension and the control parameter of the second custom dimension input by the relationship input interface, and generates the parameter correspondence based on the control parameter of the first custom dimension and the control parameter of the second custom dimension. The generated parameter correspondence is sent to the lower computer.

[0072] In the case that the number of the custom dimensions corresponding to the rotation type parameter is greater than 1, the lower computer finds the control parameters of the other custom dimensions from the parameter correspondence by reading part of the control parameters from the target step, so that the user only needs to define part of the custom control parameters in the process step, simplifying the number of parameters defined in the process step, and further simplifying the complexity of editing the process step.

[0073] In one embodiment, in the case that the rotation type parameter is the second type parameter, the third control parameter is the main arm rotation speed, and in the case that the rotation type parameter is the third type parameter, the third control parameter is the slave arm rotation angle. Accordingly, in the case that the rotation type parameter is the second type parameter, the control parameter of the first custom dimension corresponding to the rotation type parameter defined in the target step is the main arm rotation speed, and in the case that the rotation type parameter is the third type parameter, the control parameter of the first custom dimension corresponding to the rotation type parameter defined in the target step is the slave arm rotation angle.

[0074] The step of finding the control parameter of the second custom dimension corresponding to the third control parameter from the parameter correspondence comprises:

[0075] Step 1014a, in the case that the rotation type parameter is the second type parameter, searching for the slave arm rotation speed ratio corresponding to the master arm rotation speed from a preset master arm rotation speed and rotation speed ratio correspondence relationship.

[0076] Step 1014b, in the case that the rotation type parameter is the third type parameter, searching for the master arm rotation speed corresponding to the slave arm rotation angle from a preset slave arm rotation angle and master arm rotation speed correspondence relationship.

[0077] In the embodiment of the present application, in the case that the rotation type parameter is the second type parameter or the third type parameter, the number of custom dimensions corresponding to the rotation type parameter is greater than 1. Specifically, in the case that the rotation type parameter is the second type parameter, the third control parameter is the master arm rotation speed, and the second custom dimension is the rotation speed ratio. Correspondingly, the parameter correspondence relationship is the master arm rotation speed and rotation speed ratio correspondence relationship. Illustratively, the relationship input interface can further include a prompt “please create the master arm rotation speed and rotation speed ratio correspondence relationship”, and the user can input each master arm rotation speed used in the process recipe and the slave arm rotation speed ratio corresponding to each master arm rotation speed in the relationship input interface. The control software in the host computer can take one master arm rotation speed (i.e. the control parameter of one first custom dimension) input by the user from the relationship input interface as a key, take the slave arm rotation speed ratio (i.e. the control parameter of the corresponding second custom dimension) input for the master arm rotation speed as the corresponding value, establish a key-value mapping (Map), take Speed to represent the master arm rotation speed, take SpeedRatio to represent the slave arm rotation speed ratio, store in the format of {key: Speed, Value: SpeedRatio}, and obtain the master arm rotation speed and rotation speed ratio correspondence relationship. In the case that the MagnetType parameter in the target step is Profile, the Speed defined in the target step is read, and the SpeedRatio corresponding to the Speed defined in the target step is searched from the correspondence relationship. In the example, it is not necessary to define the SpeedRatio corresponding to the Speed in the target step, and the correspondence relationship is used to represent the SpeedRatio corresponding to the Speed defined in the target step in the case that the MagnetType parameter in the process recipe is Profile. Due to the actual application scenario, the same slave arm rotation speed ratio can be used in different target steps in the case that the MagnetType parameter is Profile, and therefore, taking the master arm rotation speed as the key name can avoid the problem that the key value with the same key name cannot be accurately searched. Of course, in specific implementation, SpeedRatio can be taken as the key, and Speed can be taken as the value, and the embodiment of the present application does not limit this.

[0078] In a case where the rotation type parameter is the third type parameter, the third control parameter is a slave arm rotation angle, and the second custom dimension is a rotation speed. Correspondingly, the parameter correspondence is a slave arm rotation angle and master arm rotation speed correspondence. Exemplarily, the relationship input interface can further include a prompt "please create a slave arm rotation angle and master arm rotation speed correspondence", and the user can input each slave arm rotation angle used in the process recipe and the master arm rotation speed corresponding to each slave arm rotation angle in the editing interface of the host computer. The control software in the host computer can take a slave arm rotation angle (i.e., a control parameter of a first custom dimension) input by the user from the relationship input interface as a key, take the master arm rotation speed (i.e., a control parameter of a corresponding second custom dimension) input for the slave arm rotation angle as a corresponding value, establish a key-value mapping, take the slave arm rotation angle as Angle, and store in the format of {key: Angle, Value: Speed} to obtain the slave arm rotation angle and master arm rotation speed correspondence. In a case where the MagnetType parameter in the target step is TuningAngle, the Angle defined in the target step is read, and the Speed corresponding to the Angle defined in the target step is found from the correspondence. In the example, the Speed corresponding to the Angle defined in the target step of the process recipe in which the MagnetType parameter is TuningAngle is represented by the correspondence system without the need to define the Speed corresponding to the Angle in the target step. Due to actual application scenarios, the same master arm rotation speed can be used in different target steps in which the MagnetType parameter is TuningAngle, and therefore, taking Angle as the key name can avoid the problem of being unable to accurately find the key value due to the same key name. Of course, in specific implementation, Speed can be taken as the key and Angle can be taken as the value, and the embodiments of the present application do not limit this.

[0079] In the embodiments of the present application, in a case where the rotation type parameter is the second type parameter, the control parameter of the second custom dimension can be obtained by finding the slave arm rotation speed ratio corresponding to the master arm rotation speed from the preset master arm rotation speed and rotation speed ratio correspondence. In a case where the rotation type parameter is the third type parameter, the control parameter of the second custom dimension can be obtained by finding the master arm rotation speed corresponding to the slave arm rotation angle from the preset slave arm rotation angle and master arm rotation speed correspondence. Therefore, the determination efficiency of the first control parameter can be ensured to some extent.

[0080] In an embodiment, the embodiments of the present application further include: in a case where the control parameter of the second custom dimension corresponding to the third control parameter does not exist in the correspondence, outputting alarm information representing a process recipe parameter exception.

[0081] In the embodiment of the present application, if the control parameter of the second custom dimension corresponding to the third control parameter is found in the correspondence relationship, it is considered that the search is successful, and accordingly, the third control parameter and the control parameter of the second custom dimension corresponding thereto can be executed as the first control parameter. On the contrary, if the control parameter of the second custom dimension corresponding to the third control parameter is not found in the correspondence relationship, it is considered that the search fails, and an alarm information representing an abnormal process recipe parameter is output. In this way, the use of abnormal control parameters to control the magnetron assembly rotation can be avoided, and further, the problem of wafer scrap caused by abnormal process due to abnormal alarm during actual process execution can be avoided. At the same time, by outputting the alarm information representing the abnormal process recipe parameter, the user can timely adjust the parameters. For example, if the MagnetType parameter defined in the target step is TuningAngle, an alarm information representing an angle parameter abnormality can be output in the case of search failure to prompt the user that the angle set in the target step does not exist in the arm rotation angle and main arm rotation speed correspondence relationship. If the MagnetType parameter defined in the target step is Profile, an alarm information representing a main arm rotation speed abnormality can be output in the case of search failure to prompt the user that the main arm rotation speed set in the target step does not exist in the main arm rotation speed and rotation speed ratio correspondence relationship. The alarm information can include the step identifier of the target step, the rotation type parameter defined in the target step, and the control parameter, so as to facilitate the user to adjust the parameters.

[0082] In an embodiment, the step of issuing control information to the magnetron assembly according to the control parameter set comprises the following steps.

[0083] Step 1031, for any control parameter in the control parameter set, taking the control parameter as a target parameter.

[0084] Step 1032, if the target parameter is a main arm rotation speed, sending rotation speed control information carrying the main arm rotation speed to the magnetron assembly.

[0085] Step 1033, if the target parameter is a slave arm rotation speed ratio, sending rotation speed ratio control information carrying the slave arm rotation speed ratio to the magnetron assembly.

[0086] Step 1034, if the target parameter is a slave arm rotation angle, generating angle control information based on the slave arm rotation angle, and sending the angle control information to the magnetron assembly.

[0087] It should be noted that the execution order of steps 1032 to 1034 is not unique, and the angle control information can be sent first, then the speed control information, and finally the speed ratio control information, and the embodiments of the present application do not make any limitation. Further, the execution can be started from step 1031 after obtaining all control parameters in the control parameter set, or the execution can be started from step 1031 after obtaining one control parameter in the control parameter set, and the embodiments of the present application do not make any limitation. For example, after obtaining the slave arm rotation angle, in the case that the slave arm rotation angle is different from the current slave arm rotation angle, the slave arm rotation angle is taken as a target parameter, the angle control information is generated based on the slave arm rotation angle, and the angle control information is sent to the magnetron assembly to complete the angle control. Then, the master arm speed corresponding to the slave arm rotation angle is obtained from the {key: Angle, Value: Speed} correspondence relationship, and in the case that the master arm speed is different from the current master arm speed, the master arm speed is taken as a target parameter, and the speed control information carrying the master arm speed is sent to the magnetron assembly. Then, in the case that the slave arm speed ratio is different from the current slave arm speed ratio, the slave arm speed ratio is taken as a target parameter.

[0088] In the embodiments of the present application, the slave machine sends the speed control information carrying the master arm speed, the speed ratio control information carrying the slave arm speed ratio, and the angle control information generated based on the slave arm rotation angle to the magnetron assembly, so as to control the magnetron assembly to move according to the master arm speed, the slave arm speed ratio, and the slave arm rotation angle. Compared with the prior art of directly issuing an identifier to control the entire control parameter set, the embodiments of the present application can control the master arm speed, the slave arm speed ratio, and the slave arm rotation angle respectively, so as to achieve more fine-grained control of the magnetron assembly.

[0089] In one embodiment, the step of taking the control parameter as a target parameter specifically includes:

[0090] Step 1031a, detecting whether the control parameter is the same as the current control parameter of the magnetron assembly.

[0091] Step 1031b, if the control parameter is different from the current control parameter, taking the control parameter as a target parameter.

[0092] In the embodiment of the application, the current control parameter can be actively reported by the magnetron assembly to the lower computer, and the current control parameter includes a current slave arm rotation angle, a current master arm rotation speed, and a current slave arm rotation speed ratio. It can be detected whether the master arm rotation speed is the same as the current master arm rotation speed, and if not, the master arm rotation speed is taken as a target parameter to send rotation speed control information to the magnetron assembly in the subsequent process. It can be detected whether the slave arm rotation speed ratio is the same as the current slave arm rotation speed ratio, and if not, the slave arm rotation speed ratio is taken as a target parameter to send rotation speed ratio control information to the magnetron assembly in the subsequent process. It can be detected whether the slave arm rotation angle is the same as the current slave arm rotation angle, and if not, the slave arm rotation angle is taken as a target parameter to send angle control information to the magnetron assembly in the subsequent process.

[0093] The control information includes a control instruction corresponding to each control parameter in the control parameter set. For any control parameter, the control instruction corresponding to the control parameter is used to instruct the magnetron assembly to set the current control parameter to the control parameter carried in the control instruction. The control instruction includes an instruction type bit field, and different values of the instruction bit field can represent instructions of different types. The lower computer can send the control instruction to the controller module of the magnetron assembly according to a preset communication protocol, and the controller module can analyze and extract the content of the instruction type bit field of the received instruction to identify that the current received instruction is the control instruction corresponding to the control parameter. For example, the master arm rotation speed, the magnetron assembly can identify the rotation speed control instruction by identifying that the content of the instruction type bit field is consistent with the type code of the rotation speed control instruction, and then respond to the rotation speed control instruction.

[0094] In the embodiment of the application, it is first detected whether the control parameter is the same as the current control parameter of the magnetron assembly. Only when the control parameter is not the same as the current control parameter, the control parameter is taken as a target parameter to send corresponding control information to the magnetron assembly. In this way, unnecessary control information can be avoided to be issued when the control parameter is the same as the current control parameter of the magnetron assembly without adjustment, and the processing resources of the lower computer can be saved. At the same time, the magnetron assembly can avoid responding to unnecessary control information, and the processing resources of the magnetron assembly can be saved.

[0095] Specifically, in the case that the target parameter is the main arm rotating speed, the lower computer sends a rotating speed control instruction carrying the main arm rotating speed to the controller module of the magnetron assembly, and the rotating speed control instruction is the rotating speed control information. The magnetron assembly sets the main arm rotating speed to the main arm. Specifically, the controller module in the magnetron assembly, in response to the rotating speed control instruction, uses the transmission channel corresponding to the main arm rotating speed in the network communication module to send the main arm rotating speed in the rotating speed control instruction to the driving shaft driving module at the bottom layer, so that the driving shaft driving module drives the driving shaft to rotate the main arm at the main arm rotating speed, thereby setting the main arm rotating speed to the main arm.

[0096] Specifically, in the case that the target parameter is the slave arm rotating speed ratio, the lower computer sends a rotating speed ratio control instruction carrying the slave arm rotating speed ratio to the controller module of the magnetron assembly, and the rotating speed ratio control instruction is the rotating speed ratio control information. The magnetron assembly sets the slave arm rotating speed ratio to the slave arm. Specifically, the controller module in the magnetron assembly, in response to the rotating speed ratio control instruction, uses the transmission channel corresponding to the slave arm rotating speed ratio in the network communication module to send the slave arm rotating speed ratio in the rotating speed ratio control instruction to the driven shaft driving module at the bottom layer, so that the driven shaft driving module drives the driven shaft to rotate the slave arm at the slave arm rotating speed corresponding to the slave arm rotating speed ratio, thereby setting the slave arm rotating speed ratio to the slave arm.

[0097] Specifically, in the case that the target parameter is the slave arm rotating angle, in one implementation, the lower computer generates an angle control instruction carrying the slave arm rotating angle, and the angle control instruction is the angle control information, and then sends the angle control instruction to the controller module of the magnetron assembly. The magnetron assembly sets the slave arm rotating angle to the slave arm. Specifically, the controller module in the magnetron assembly, in response to the angle control instruction, uses the transmission channel corresponding to the slave arm rotating angle in the network communication module to send the slave arm rotating angle in the angle control instruction to the driven shaft driving module at the bottom layer. Accordingly, the driven shaft driving module directly drives the driven shaft to rotate the slave arm to the slave arm rotating angle at the current angular velocity, sets the slave arm rotating angle to the slave arm, and further modifies the included angle between the main arm and the slave arm to change the movement radius of the magnetron. In this way, the magnetron needs to be stopped first, and the slave arm is set to the slave arm rotating angle. After the slave arm rotates to the slave arm rotating angle without rotating the main arm, the included angle between the main arm and the slave arm is the angle set in the target step in the process recipe. Taking the case that the slave arm rotating angle is 180° as an example, Figure 4 is a schematic diagram of the magnetron assembly after angle adjustment provided by the embodiment of the present application, as Figure 4 shown, at this time, the magnetron is at the innermost position.

[0098] In another implementation, the magnetron can not be stopped, and a multi-stage speed adjustment process can be used to realize the angle change, i.e., first, the magnetron assembly is controlled to change speed to a target angular velocity, then, the magnetron assembly is controlled to move at a constant speed for a period of time, or, the magnetron assembly is directly controlled to change speed from the target angular velocity to the original angular velocity, and finally, the slave arm is rotated to the slave arm rotation angle. In this way, the angle control information can be a control instruction for controlling the angular velocity. The implementation is described in detail below.

[0099] In an embodiment, the step of generating the angle control information based on the slave arm rotation angle and sending the angle control information to the magnetron assembly specifically includes:

[0100] In step 1034a, the angle difference between the slave arm rotation angle and the current slave arm rotation angle of the magnetron assembly is taken as a target angle, and a target angular velocity is determined based on the target angle and the current angular velocity of the slave arm; wherein the total rotation angle corresponding to the speed change process from the current angular velocity to the target angular velocity and the speed change process from the target angular velocity to the current angular velocity is not greater than the target angle.

[0101] In step 1034c, the duration of the constant speed process is determined based on the target angular velocity and the difference between the target angle and the total rotation angle.

[0102] In step 1034d, the first control information and the second control information are sent to the magnetron assembly according to the duration of the constant speed process, so as to control the magnetron assembly to rotate the slave arm by the target angle; the first control information and the second control information respectively carry the target angular velocity and the current angular velocity.

[0103] Specifically, the lower computer can calculate the difference between the slave arm rotation angle and the current slave arm rotation angle to obtain the target angle. Correspondingly, the target angle is the angle that the slave arm needs to rotate, and after the slave arm rotates the target angle, the slave arm rotation angle in the control parameter set is reached. For example, assuming that the slave arm rotation angle is 180° and the current slave arm rotation angle is 0°, the target angle can be 180°, and after rotating 180°, the slave arm rotation angle is reached.

[0104] Wherein, the slave arm rotation angle in the control parameter set is greater than the current slave arm rotation angle, which means that the current slave arm angular velocity is relatively smaller than the master arm angular velocity, and the slave arm angular velocity needs to be increased to increase the slave arm rotation angle. Correspondingly, in this way, the speed change process is acceleration first and then deceleration, the speed change process from the current angular velocity to the target angular velocity is the acceleration process, and the speed change process from the target angular velocity to the current angular velocity is the deceleration process.

[0105] If the slave arm rotation angle in the control parameter set is less than the current slave arm rotation angle, it indicates that the current slave arm angular velocity is relatively larger than the master arm angular velocity, and the slave arm angular velocity needs to be reduced to reduce the slave arm rotation angle. Accordingly, in this mode, the speed change process is deceleration first and then acceleration. The speed change process from the current angular velocity to the target angular velocity is a deceleration process, and the speed change process from the target angular velocity to the current angular velocity is an acceleration process.

[0106] The current angular velocity is represented by v0, and the lower computer can obtain the current slave arm rotation speed of the magnetron assembly. 2π×current slave arm rotation speed is taken as the current angular velocity. The difference between the initial angular velocity and the current angular velocity is calculated, and the acceleration time t1 and the rotation angle θ1 corresponding to the acceleration process are calculated based on the difference and the preset angular acceleration a0. The deceleration time t2 and the rotation angle θ2 corresponding to the deceleration process are calculated based on the difference and the preset angular deceleration a1. Specifically, vx represents the initial angular velocity, the difference is vx-v0, and accordingly, t1=(vx-v0) / a0, θ1=a0×t1+1 / 2×a0×t1 2 , t2=(vx-v0) / a1, θ2=a1×t2+1 / 2×a1×t2 2 . Wherein, the preset angular acceleration a0 and the preset angular deceleration a1 are set by the user in the interface of the upper computer. For example, the user can pre-select a value not exceeding the maximum angular acceleration as the preset angular acceleration and a value not exceeding the maximum angular deceleration as the preset angular deceleration through a debugging process.

[0107] Then, the difference between the target angle θ and θ1 and θ2 is calculated as the uniform rotation angle θ3. Wherein, θ3=θ-θ1-θ2, i.e. θ3=θ-(θ1+θ2). In the case where the uniform rotation angle θ3 is not less than 0, the current initial angular velocity vx is determined as the target angular velocity. In the case where the uniform rotation angle θ3 is less than 0, it indicates that the current target angle cannot be rotated through the two speed change processes, so the initial angular velocity vx is adjusted, for example, the initial angular velocity vx is updated as: initial angular velocity vx / 2. Then the step of calculating the difference between the initial angular velocity and the current angular velocity is started to execute, and the next round of calculation process is started until the initial uniform rotation angle θ3 is not less than 0, and the current initial angular velocity is determined as the target angular velocity.

[0108] In the embodiment of the application, the difference between the target angle and the total rotation angle divided by the target angular velocity can be calculated as the uniform process time. The uniform process time is represented by t3, t3=θ3 / v0, specifically, in the case where the uniform rotation angle θ3 is not less than 0, the last calculated θ3 is divided by the current initial angular velocity to obtain t3. Wherein, t3 is not less than 0.

[0109] In the embodiment of the present application, the first control information is first issued, and the first control information is used to control the magnetron assembly to adjust the slave arm from v0 to vx. After the current angular velocity is adjusted to the target angular velocity, the second control information is issued after the interval constant velocity process duration, and the second control information is used to control the magnetron assembly to adjust the slave arm from vx to v0. In this way, θ1 is rotated in the variable speed process from v0 to vx, θ3 is rotated at the angular velocity of vx in the constant velocity process duration, and θ2 is rotated in the variable speed process from vx to v0, and finally the target rotation angle θ is realized, and the position of the rotation angle of the slave arm in the control parameter set of the target step is reached.

[0110] In the embodiment of the present application, the multi-section type speed adjustment process is used to realize the variable angle, so that the angle change process is smoother, the impact force in the angle change process can be reduced, and the probability of failure occurrence can be further reduced.

[0111] In one embodiment, the step of issuing the first control information and the second control information to the magnetron assembly according to the constant velocity process duration specifically includes:

[0112] In step 1034d1, the first control information is sent to instruct the magnetron assembly to adjust the slave arm from the current angular velocity to the target angular velocity.

[0113] In step 1034d2, when the confirmation information returned by the magnetron assembly is received, the second control information is sent to instruct the magnetron assembly to adjust the slave arm from the target angular velocity to the current angular velocity after the constant velocity process duration. The confirmation information is returned in the case that the slave arm is adjusted from the current angular velocity to the target angular velocity.

[0114] In the embodiment of the present application, in the case that the rotation angle of the slave arm in the control parameter set is greater than the current rotation angle of the slave arm, the first control information is an acceleration control instruction carrying the target angular velocity vx and the preset angular acceleration a0. The lower computer sends the acceleration control instruction to the magnetron assembly, controls the magnetron assembly to set the internal angular acceleration parameter to the preset angular acceleration a0, sets the internal angular velocity change rate parameter to the target angular velocity vx, and then controls the slave arm to be adjusted from the current angular velocity v0 to the target angular velocity vx at the preset angular acceleration a0. In the case that the rotation angle of the slave arm in the control parameter set is less than the current rotation angle of the slave arm, the first control information is a deceleration control instruction carrying the target angular velocity vx and the preset angular deceleration a1. The lower computer sends the deceleration control instruction to the magnetron assembly, controls the magnetron assembly to set the internal angular velocity change rate parameter to the preset angular deceleration a1, sets the internal angular velocity parameter to the target angular velocity vx, and then controls the slave arm to be adjusted from the current angular velocity v0 to the target angular velocity vx at the preset angular deceleration.

[0115] In the embodiment of the present application, the magnetron assembly returns a confirmation information when adjusting the current angular velocity of the slave arm to the target angular velocity, and the specific form of the confirmation information can be set as required. For example, the confirmation information can be "1" or "true", and the embodiment of the present application does not limit this. When receiving the confirmation information returned by the magnetron assembly, the lower computer can start timing, and generate and send the second control information when reaching the uniform speed process time t3. In the case where the slave arm rotation angle in the control parameter set is greater than the current slave arm rotation angle, the second control information is a deceleration control instruction carrying the current angular velocity v0 and the preset angular deceleration a1. The lower computer sends the deceleration control instruction to the magnetron assembly, controls the magnetron assembly to set the internal angular acceleration parameter to the preset angular deceleration a1 and the internal angular velocity change rate parameter to the target angular velocity vx, and then controls the slave arm to adjust from the target angular velocity vx to v0 at the preset angular deceleration a1. In the case where the slave arm rotation angle in the control parameter set is less than the current slave arm rotation angle, the second control information is an acceleration control instruction carrying the current angular velocity v0 and the preset angular acceleration a0. The lower computer sends the acceleration control instruction to the magnetron assembly, controls the magnetron assembly to set the internal angular velocity change rate parameter to the preset angular acceleration a0 and the internal angular velocity parameter to the current angular velocity v0, and then controls the slave arm to adjust from the target angular velocity vx to v0 at the preset angular deceleration.

[0116] In the embodiment of the present application, the first control information is first sent to the magnetron assembly to instruct the magnetron assembly to adjust the current angular velocity of the slave arm to the target angular velocity. Based on the uniform speed process time, the second control information is sent to the magnetron assembly after receiving the confirmation information returned by the magnetron assembly. In this way, the control of the angular velocity of the slave arm of the magnetron assembly can be accurately realized, and the angle change effect can be ensured. At the same time, the slave arm rotation angle determines the magnetron position, and the magnetron position has a direct impact on the sheet resistance (Rs) uniformity of the wafer in the process. Therefore, accurate control of the slave arm rotation angle can further reduce the Rs uniformity of the wafer.

[0117] Optionally, the embodiment of the present application can also include the following steps:

[0118] In step S31, in the case where the output value of the sputtering power source defined in the target step is not 0, the time length of the continuous process step with the output value not being 0 is determined as the target time length from the target step.

[0119] In step S32, the number of rotation circles corresponding to the main arm rotating speed is determined based on the target time length and the main arm rotating speed in the control parameter set.

[0120] Step S33, if the rotation number is not an integer, adjusting the main arm rotating speed; wherein the rotation number corresponding to the adjusted main arm rotating speed in the target time length is an integer.

[0121] In the actual application scenario, the process step in which the output value of the sputtering power source is not 0 is often continuous and uses the same slave arm rotating angle. The slave arm rotating angle defined by the process step in which the output value of the sputtering power source is not 0 is the same as the slave arm rotating angle in the control parameter set of the previous target step, that is, in the case where the output value of the sputtering power source is not 0 and the magnetron in the magnetron assembly is in the working state, the angle change process is not involved. In this way, it can be ensured that the magnetron will not be disturbed in the working state. Therefore, in the embodiment of the present application, the step S31 is specifically performed in the case where the output value of the sputtering power source is not 0 and the slave arm rotating angle in the control parameter set is the same as the current slave arm rotating angle, that is, the angle does not need to be changed. In this way, the problem that the main arm rotating speed is adjusted in the case where the magnetron is in the working state, the magnetron in the working state is disturbed, and the distribution of particles on the wafer surface in the sputtering process is affected can be avoided.

[0122] Specifically, the time length of the target step in the process recipe can be read, and from the target step, the time length of the next step in which the output value of the sputtering power source is not 0 is read until the process step in which the output value of the sputtering power source is defined to be not 0 is reached. The total time length of all the read step time lengths is calculated as the target time length. Exemplarily, it is assumed that the target step is step c, and the steps d, e and f are included after the step c. The output value of the sputtering power source defined in the steps d and e is not 0, and the output value of the sputtering power source defined in the step f is 0. Then, the total time length of the steps c, d and e can be calculated as the target time length.

[0123] Next, the product of the main arm rotating speed in the control parameter set and the target time length is calculated to obtain the rotation number corresponding to the main arm rotating speed. Whether the number of rotations of the magnetron in the target time length at the main arm rotating speed is an integer is determined based on the rotation number corresponding to the main arm rotating speed. Specifically, if the rotation number is an integer, it means that the number of rotations of the magnetron in the target time length at the main arm rotating speed is an integer. Accordingly, the main arm rotating speed can not be optimized. On the contrary, if the rotation number is not an integer, the main arm rotating speed can be adjusted, that is, accelerated or decelerated based on the main arm rotating speed, to ensure that the magnetron rotates a whole circle in the target time length in which the sputtering power source has an output.

[0124] Since the sputtering power source has an output value that is not 0, whether the magnetron rotates a full circle in the stage has a certain influence on the Rs uniformity of the wafer. Among them, the Rs uniformity is usually used to describe the uniformity of the Rs of the thin film at different positions. The smaller the Rs value, the smaller the difference in sheet resistance of the thin film at different positions, that is, the more uniform the resistance distribution of the thin film, and the better the Rs uniformity. In the embodiment of the application, by adjusting the main arm rotating speed in the case where the number of rotations corresponding to the main arm rotating speed in the control parameter set is not an integer, the adjusted main arm rotating speed corresponds to an integer number of rotations in the target time length, that is, the magnetron can rotate a full circle in the target time length with output of the sputtering power source, and thus the Rs uniformity of the wafer can be better.

[0125] It should be noted that the above steps S31-S33 can be executed in the case where the user turns on the full circle rotation function. For example, the user can set an opening identifier indicating that the full circle rotation function is turned on in the process recipe in the case where the full circle rotation function is selected to be turned on. Correspondingly, the lower computer executes the above steps S31-S33 in the case where the opening identifier is detected. Otherwise, the above steps S31-S33 are not executed. In this way, the user can flexibly control the processing logic of the lower computer as needed.

[0126] In an embodiment, the above step of adjusting the main arm rotating speed specifically comprises:

[0127] Step S33a, determining a single circle time length corresponding to the main arm rotating speed based on the main arm rotating speed; the single circle time length is used to represent the time length required for rotating a circle at the main arm rotating speed.

[0128] Step S33b, determining a target number of rotations corresponding to the number of rotations based on the single circle time length; the target number of rotations is an integer.

[0129] Step S33c, adjusting the main arm rotating speed based on the target number of rotations and the target time length to obtain an adjusted main arm rotating speed.

[0130] The main arm rotation speed represents the number of rotations per unit time. In the embodiment of the present application, the reciprocal of the main arm rotation speed is calculated to obtain the time length of a single rotation corresponding to the main arm rotation speed. Then, an integer number of rotations can be determined as the target number of rotations based on the time length of a single rotation. In one implementation, the initial number of rotations is obtained, and the product of the initial number of rotations and the time length of a single rotation is calculated as the comparison time length. If the ratio of the comparison time length to the target time length is less than the preset proportion threshold, the initial number of rotations is increased, and the step of calculating the product of the initial number of rotations and the time length of a single rotation is continued to be executed until the ratio of the comparison time length to the target time length is not less than the preset proportion threshold. In the case where the ratio of the comparison time length to the target time length is not less than the preset proportion threshold, the current initial number of rotations is obtained. The target number of rotations is obtained by subtracting 1 from the current initial number of rotations. For example, the time length of a single rotation is represented by oneCycleTime, the target time length is represented by time, the initial number of rotations is represented by cycleNum, and the initial value of cycleNum is 1. It is determined whether oneCycleTime*cycleNum / time is less than the preset proportion threshold, which is 1 in this example. If oneCycleTime*cycleNum / time is less than 1, the current value of cycleNum is increased by 1, and oneCycleTime*cycleNum is recalculated as the comparison time length. It is determined whether oneCycleTime*cycleNum / time is not less than 1. When oneCycleTime*cycleNum / time is not less than 1, the final cycleNum is obtained. In this way, 1 is used as the step size for increasing cycleNum, and cycleNum is updated gradually, which can ensure the updating accuracy of cycleNum to some extent. Further, cycleNum is greater than the actual number of rotations at this time. Therefore, cycleNum-1 is used as the target number of rotations, which enables the main arm rotation speed to be adjusted at a lower proportion coefficient in the subsequent step, thereby preventing the magnetron speed from being too large and exceeding the controllable range. It should be noted that the preset proportion threshold can also be increased according to the proportion set by the user in the embodiment of the present application, so that the value of cycleNum determined is larger, and the main arm can rotate more times within the target time length after the main arm rotation speed is adjusted. In this way, the size of the final cycleNum can be flexibly controlled by controlling the preset proportion threshold.

[0131] In one implementation, the number of rotations can also be directly rounded. For example, the number of rotations can be rounded down to obtain the target number of rotations. For example, the number of rotations is 32.5, and after rounding down, the target number of rotations is 32. Accordingly, the main arm rotation speed is adjusted to be lower after rounding down, thereby preventing the magnetron speed from being too large and exceeding the controllable range. Of course, rounding up can also be used, which is not limited in the embodiment of the present application.

[0132] When the speed adjustment is performed, the target number of rotations is divided by the target time length to obtain the main arm speed. Alternatively, the product of the single-rotation time length and the target number of rotations can be calculated, the ratio of the product to the target time length is calculated, an adjustment coefficient is adjusted, and the product of the main arm speed and the adjustment coefficient is taken as the adjusted main arm speed. Exemplarily, the main arm speed is denoted as s0, and the adjusted main arm speed is denoted as sf, and the adjusted main arm speed is: sf=s0×oneCycleTime×(cycleNum-1) / time.

[0133] Based on the calculation formula of the main arm speed, sf×time is equal to s0×oneCycleTime×(cycleNum-1), sf×time represents the number of rotations of the adjusted main arm speed in the target time length, oneCycleTime×(cycleNum-1) represents the time length required to complete the target number of rotations at the original speed s0, and s0×oneCycleTime×(cycleNum-1) represents the number of rotations of s0 in the oneCycleTime×(cycleNum-1) time length. Since the number of rotations of s0 in the oneCycleTime×(cycleNum-1) time length is an integer, the adjusted main arm speed rotates an integer number of rotations in the target time length. The speed adjustment coefficient oneCycleTime×(cycleNum-1) / time is used, and the product of s0 and the speed adjustment coefficient is used as the adjusted main arm speed, which can ensure the speed adjustment accuracy to a certain extent.

[0134] In the embodiment of the present application, the main arm speed is determined based on the main arm speed, and the single-rotation time length corresponding to the main arm speed is determined. The target number of rotations corresponding to the rotation number is determined based on the single-rotation time length. The adjusted main arm speed is calculated based on the target number of rotations and the target time length. Since the adjusted main arm speed is controlled to rotate the target number of rotations in the target time length, the magnetron assembly can be controlled at the adjusted main arm speed, and the Rs uniformity of the wafer can be improved.

[0135] In one embodiment, the method further comprises the following steps:

[0136] In step S41, when the output value of the sputtering power defined in the target step is 0, the slave arm angle deviation of the magnetron assembly is obtained.

[0137] In step S42, when the slave arm angle deviation exceeds the preset deviation threshold, the steps of generating the angle control information based on the slave arm rotation angle and sending the angle control information to the magnetron assembly are re-executed.

[0138] The preset deviation threshold can be input by a user based on a user interface of the upper computer, and the upper computer sends the preset deviation threshold to the lower computer after the user inputs the preset deviation threshold. The specific value of the preset deviation threshold can be set by the user as needed, and the embodiments of the present application do not limit this. Specifically, the lower computer can obtain the current slave arm rotation angle of the magnetron assembly in real time, for example, receive the current slave arm rotation angle sent by the magnetron assembly in real time. Then the difference between the slave arm rotation angle in the control parameter set of the calculation target step and the obtained current slave arm rotation angle is taken as the slave arm angle deviation. If the slave arm angle deviation is not greater than the preset deviation threshold, it is determined that the current angle adjustment is not needed. Otherwise, if the slave arm angle deviation is greater than the preset deviation threshold, angle compensation can be performed, that is, the above step 1034 is returned to start execution.

[0139] In actual application scenarios, the slave arm rotation angle will deviate due to mechanical motion loss and water resistance during the rotation of the magnetron. In the embodiments of the present application, whether the slave arm angle deviation exceeds the preset deviation threshold is monitored in real time, and in the case of exceeding, the angle change process is restarted to ensure the accuracy of the slave arm rotation angle and the rotation accuracy of the magnetron. Moreover, in the embodiments of the present application, the angle adjustment is performed only in the stage when the sputtering power source does not output, which can avoid interference with the working process of the magnetron.

[0140] In the embodiment of the present application, a rotation type parameter is defined in a target step, and a user can input any rotation type parameter for the target step in an interface to control the magnetron to rotate according to a corresponding rotation mode. Different rotation type parameters correspond to different control interfaces, and the lower computer calls the control interface corresponding to the rotation type parameter to generate a control parameter set of the target step and implement the processing logic of issuing control information to the magnetron assembly according to the control parameter set. The parameter generation strategy corresponding to the rotation type parameter is the parameter generation strategy adopted by the control interface corresponding to the rotation type parameter. The control interfaces corresponding to different rotation type parameters have different processing logic of generating the control parameter set of the target step, that is, the control interfaces corresponding to different rotation type parameters have different parameter generation strategies. Correspondingly, the control software of the lower computer provides three control interfaces corresponding to different rotation modes: the ConstSpeed interface, the Profile interface and the TuningAngle interface, to respectively implement the control of the magnetron assembly to rotate in the forward and reverse rotation mode, the planetary trajectory rotation mode and the multi-radius rotation mode according to the first control parameter defined by the user in the process recipe, and to realize the rotation of different magnetron motion trajectories. In this way, the user sets the rotation type parameter corresponding to the required rotation mode in the process recipe and customizes the first control parameter in the rotation mode that can be customized by the user, so as to flexibly control the magnetron assembly to rotate in the rotation mode according to the first control parameter set by the user.

[0141] For the ConstSpeed interface, the parameters (Param) of the interface include the main arm speed Speed, the user sets MagnetType: ConstSpeed in the process step, and sets the main arm speed Speed in the process step. When the lower computer parses that the MagnetType parameter in the step is ConstSpeed, the main arm speed Speed is transmitted to the ConstSpeed interface, the ConstSpeed interface is called, the main arm speed Speed, the default slave arm speed ratio and the default slave arm rotation angle are combined by the ConstSpeed interface as a control parameter set, control information is issued to the magnetron assembly according to the control parameter set, and the user-defined main arm speed Speed is set to the main arm, the default slave arm speed ratio and the default slave arm rotation angle are set to the slave arm, so that the main and slave arms rotate synchronously. In the case of Speed greater than 0, the forward rotation is realized according to the set speed, and in the case of Speed less than 0, the reverse rotation is realized according to the set speed. Figure 5 is a processing process schematic diagram provided by the embodiment of the present application, as Figure 5As shown, in the case of the MagnetType parameter being ConstSpeed, if the main arm rotation speed is greater than 0, forward rotation is performed, and if the main arm rotation speed is less than 0, reverse rotation is performed.

[0142] For the Profile interface, the parameter settings of the interface include the main arm rotation speed Speed, the user sets the MagnetType: Profile in the process step, and sets the main arm rotation speed Speed in the process step. When the lower computer parses the MagnetType parameter in the step to be Profile, the main arm rotation speed Speed is transmitted to the Profile interface, the Profile interface is called, the main arm rotation speed Speed corresponding to the slave arm rotation speed ratio is searched from the preset corresponding relationship: {key: Speed, Value: SpeedRatio} by the Profile interface, the main arm rotation speed Speed, the searched slave arm rotation speed ratio, and the default slave arm rotation angle are combined as a control parameter set, control information is issued to the magnetron assembly according to the control parameter set, the user-defined main arm rotation speed Speed is set to the main arm by the magnetron assembly, and the user-defined slave arm rotation speed ratio and the default slave arm rotation angle are set to the slave arm. In the Profile mode, SpeedRatio is not 1, the slave arm rotation speed is not the same as the main arm rotation speed, there is a speed difference between the main arm and the slave arm, at this time, the main arm drives the slave arm to revolve while the slave arm revolves around its own center, realizing the planetary trajectory rotation mode. Figure 6 is another process schematic diagram provided by the embodiment of the application, as Figure 6 As shown, in the case of the MagnetType parameter being Profile, Map lookup is performed based on the main arm rotation speed Speed, that is, whether there is a slave arm rotation speed ratio corresponding to the main arm rotation speed in the preset main arm rotation speed and rotation speed ratio corresponding relationship is searched. If the search is successful, the first control parameter: the main arm rotation speed Speed and the slave arm rotation speed ratio SpeedRatio corresponding to the Speed are obtained. If the search fails, an alarm is thrown, that is, alarm information is output.

[0143] For the TuningAngle interface, the parameter setting of the interface includes the slave arm rotation angle Angle, the user sets the MagnetType: TuningAngle in the process step, and sets the slave arm rotation angle Angle in the process step. In the case that the MagnetType parameter parsed into the step is TuningAngle, the slave arm rotation angle Angle is transmitted to the TuningAngle interface by the slave machine, the TuningAngle interface is called, the corresponding slave arm rotation angle Angle is searched from the preset corresponding relationship: {key: Angle, Value: Speed} by the TuningAngle interface, the slave arm rotation angle Angle, the searched main arm speed Speed and the default slave arm speed ratio are combined as a control parameter set, the control information is issued to the magnetron assembly according to the control parameter set, and the user-defined main arm speed Speed is set to the main arm by the magnetron assembly, and the user-defined slave arm rotation angle and the default slave arm speed ratio are set to the slave arm. By modifying the slave arm rotation angle, the magnetron movement radius is changed, and the multi-radius rotation mode is realized. Figure 7 is another processing process schematic diagram provided by the embodiment of the present application, as shown in Figure 7 in the case that the MagnetType parameter is TuningAngle, the Map lookup is performed based on the slave arm rotation angle Angle, that is, whether there is a main arm speed corresponding to the slave arm rotation angle in the preset corresponding relationship between the slave arm rotation angle and the main arm speed is searched. If yes, the first control parameter: the slave arm rotation angle Angle and the main arm speed Speed corresponding to the slave arm rotation angle Angle are obtained. If no, an alarm is thrown, that is, the alarm information is output.

[0144] The prior art presets a fixed control parameter set in the controller module of the magnetron assembly, and the user can only use the slave arm rotation angle in the preset fixed control parameter set. Exemplarily, it is assumed that only the slave arm rotation angles of 0°, 0° and 180° in the three control parameter sets are preset, so that the user can only use the angles of 0° and 180°. In the case that the three control parameter sets respectively realize the forward and reverse rotation mode, the multi-radius rotation mode 1 and the multi-radius rotation mode 2, the user cannot use the planetary trajectory rotation mode. In the embodiment of the present application, without modifying the software configuration of the controller module in the magnetron assembly, the control software in the slave machine can be compatible with the multiple movement modes of the magnetron through the magnetron rotation mode interface, the control of the multiple movement modes of the magnetron is realized, and the demand for the magnetron rotation mode under different demands and different working conditions is met.

[0145] Figure 8 is another processing process schematic diagram provided by the embodiment of the present application, as shown in Figure 8As shown, the Angle parameter in the process recipe can be first parsed to obtain the slave arm rotation angle. Then, a Map lookup is performed based on the Angle. If the lookup fails, an alarm is thrown. If the lookup succeeds, it is determined whether the angle is changed, i.e., whether the slave arm rotation angle is the same as the current slave arm rotation angle. If the same, it indicates that the angle does not need to be changed. If not the same, it indicates that the angle needs to be changed. In the case of needing to change the angle, the angle and the speed are set, i.e., the control information corresponding to the slave arm rotation angle and the main arm rotation speed is sent. In the case of not needing to change the angle, it is first determined whether the speed needs to be changed, i.e., whether the main arm rotation speed is the same as the current main arm rotation speed. If the same, the rotation speed control information is not issued, and the main arm speed is not changed. If not the same, in the case that the magnetron does not stop rotating, the rotation speed control information corresponding to the main arm rotation speed is issued to set the speed. It can be understood that after the processing procedure of the slave arm rotation angle and the main arm rotation speed is completed, in the case that the slave arm rotation speed ratio is not the same as the current slave arm rotation speed ratio, the rotation speed ratio control information can be issued.

[0146] In the multi-radius rotation mode, different angles can be continuously transformed in one process recipe, so that the magnetron rotates at different radii to achieve different radius motion trajectories, improve target utilization and distribution of examples on the wafer surface, and improve Rs uniformity. Taking a through-silicon via (TSV) process as an example, a magnetron assembly is used to deposit a barrier layer and a seed layer in the TSV process. Accordingly, a plurality of process steps in which the MagnetType parameter is set to TuningAngle can be defined in the process recipe, and different from-arm rotation angles Angle are defined in the plurality of process steps. For example, the from-arm rotation angle Angle can be set to 27°, 90°, 112°, 140°, and 170° in the 5 process steps of the process recipe: step 1, step 3, step 5, step 7, and step 9. The lower computer can continuously transform the angle according to the process recipe. Specifically, the lower computer sends angle control information for controlling the from-arm rotation angle to transform to 27° to the magnetron assembly when executing step 1. In step 2, the magnetron performs magnetron sputtering at a radius position of 27° of the from-arm rotation. When executing step 3, angle control information for controlling the from-arm rotation angle to transform to 90° is sent to the magnetron assembly. In step 4, the magnetron performs magnetron sputtering at a radius position of 90° of the from-arm rotation. When executing step 5, angle control information for controlling the from-arm rotation angle to transform to 112° is sent. In step 6, the magnetron performs magnetron sputtering at a radius position of 112° of the from-arm rotation. When executing step 7, angle control information for controlling the from-arm rotation angle to transform to 140° is sent. In step 8, the magnetron performs magnetron sputtering at a radius position of 140° of the from-arm rotation. When executing step 9, angle control information for controlling the from-arm rotation angle to transform to 170° is sent. In step 10, the magnetron performs magnetron sputtering at a radius position of 170° of the from-arm rotation. In this way, the magnetron rotates at 5 radii corresponding to 27°, 90°, 112°, 140°, and 170° during the TSV process, and multi-radius mode rotation is achieved.

[0147] In the TSV process, if only a single radius is used, the Rs value is 7.45% at 27° single radius, 8.89% at 90° single radius, 9.29% at 112° single radius, 20.91% at 140° single radius, and 12.36% at 170° single radius. Compared with the way of using only a single radius, in the embodiment of the present application, the film plating under different radii is realized, and by using different radii, more uniform film thickness distribution can be realized in different areas of the wafer, so that the Rs value can be reduced and the RS uniformity can be improved. For example, in the case of using 5 radii in the TSV process, the tested Rs value is 4.68%. And the number of particles falling in different positions on the wafer is different when different radii are used. In the embodiment of the present application, by using multiple radii, the number of particles falling in different positions can be increased to some extent, and the wafer film thickness can be improved to some extent.

[0148] For example, in the full target etching process, when the target material is replaced, multiple MagnetType parameters can be set as Profile in the process steps in the process recipe, and different arm speed ratios are defined in the multiple process steps. In the whole process, different planetary trajectories are used for magnetron sputtering, so as to improve the target coverage rate of full target etching.

[0149] Figure 9 is another step flow chart of a control method of a magnetron assembly provided by the embodiment of the present application. The method is applied to an upper computer, as shown in Figure 9 The control method of the magnetron assembly can include the following steps:

[0150] Step 201, in response to a process recipe editing operation, a recipe input interface is displayed; the recipe input interface includes a rotation type parameter input area and an input area of a first control parameter of a self-defined dimension.

[0151] Step 202, receiving a process recipe input by the recipe input interface, and sending the process recipe to a lower computer to control the magnetron assembly by the lower computer according to the control method of the magnetron assembly.

[0152] The host computer and the slave computer can be two independent electronic devices, and the host computer can communicate with the slave computer. The process recipe editing operation can be an operation triggered by a user to edit a process recipe, for example, clicking a process recipe editing control. In the embodiment of the present application, the recipe input interface provided by the host computer includes a rotation type parameter input area and an input area of a first control parameter of a custom dimension, so that the user can set the rotation type parameter and the first control parameter for the target step in the process recipe based on the two input areas. The style of the input area and the style of the recipe input interface can be designed as needed, and the embodiment of the present application does not limit this.

[0153] Optionally, the embodiment of the present application further includes: displaying a relationship input interface; receiving the first custom dimension control parameter and the second custom dimension control parameter input by the relationship input interface; generating a parameter correspondence relationship based on the first custom dimension control parameter and the second custom dimension control parameter, and sending the parameter correspondence relationship to the slave computer. The implementation of generating a parameter correspondence relationship can refer to the related description above, which will not be repeated here.

[0154] In summary, the control method of the magnetron assembly provided by the embodiment of the present application responds to the process recipe editing operation to display a recipe input interface; the recipe input interface includes a rotation type parameter input area and an input area of a first control parameter of a custom dimension. The process recipe input by the recipe input interface is received, and the process recipe is sent to the slave computer to control the magnetron assembly according to the aforementioned control method of the magnetron assembly. The user can directly define the required rotation type parameter in the process recipe, and at the same time, the user can customize the control parameter, which can control the magnetron assembly to rotate according to the user-defined arbitrary first control parameter in the required rotation type representation mode, and the control method has higher flexibility. The control parameter set is generated by the slave computer, and the control information is directly issued according to the parameter set, so that it is not necessary to pre-set a fixed control parameter in the controller module of the magnetron assembly, and the magnetron assembly does not need to find the control parameter set according to the identifier and generate the corresponding control information. Therefore, the operation steps of the magnetron assembly can be simplified, and the response efficiency of the magnetron assembly is improved.

[0155] The embodiment of the present application also provides a slave computer for implementing the control method of the aforementioned magnetron assembly.

[0156] The embodiment of the present application also provides a semiconductor process equipment including a reaction chamber provided with a magnetron assembly, a host computer, and the aforementioned slave computer; the host computer provides a process recipe for the slave computer according to the aforementioned another control method of the magnetron assembly.

[0157] The embodiment of the present application further provides a readable storage medium, which stores executable instructions, and when the executable instructions are executed by one or more processors, the processors execute various processes of the method embodiment of the foregoing embodiment and can achieve the same technical effects. To avoid repetition, details are not described herein.

[0158] For the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and relevant parts are described in the part of the method embodiment.

[0159] Each embodiment in the specification is described in a progressive manner, and each embodiment focuses on the difference from other embodiments. The same and similar parts between various embodiments can be referred to each other. Those skilled in the art should understand that the embodiments of the embodiments of the present application can be provided as a method, a device, or a computer program product. Therefore, the embodiments of the present application can be in the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the embodiments of the present application can be in the form of a computer program product implemented on one or more computer usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer usable program codes.

[0160] The embodiments of the present application are described with reference to flowcharts and / or block diagrams of the method, terminal device (system), and computer program product according to the embodiments of the present application. It should be understood that each flow and / or block in the flowcharts and / or block diagrams, and the combination of the flows and / or blocks in the flowcharts and / or block diagrams can be implemented by computer program instructions. These computer program instructions can be provided to a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing terminal device to produce a machine, so that the instructions executed by the computer or other programmable data processing terminal device produce a device for implementing the functions specified in the flowcharts and / or block diagrams. Figure 1 The functions specified in one or more flows and / or blocks Figure 1 The functions specified in one or more flows and / or blocks Figure 1 The functions specified in one or more flows and / or blocks Figure 1 The functions specified in one or more flows and / or blocks

[0161] These computer program instructions can also be loaded into a computer or other programmable data processing terminal device, so that a series of operational steps are performed on the computer or other programmable terminal device to generate a computer-implemented process, so that the instructions executed on the computer or other programmable terminal device provide a process for implementing the functions specified in the flowchart Figure 1 one flow or multiple flows and / or the functions specified in the block Figure 1 one block or multiple blocks. Although the preferred embodiments of the present application have been described, those skilled in the art can make additional changes and modifications to these embodiments once they get the basic inventive concept. Therefore, the appended claims are intended to cover all the changes and modifications falling within the scope of the embodiments of the present application.

[0162] Finally, it should be noted that the relational terms herein, such as first and second, and the like, are used solely to distinguish one from another entity or action, without necessarily requiring or implying any such actual relationship or order between such entities or actions. Moreover, the terms "comprising", "having", or any other variant thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements does not include only those elements but can also include other elements not expressly listed or inherent to such process, method, article, or terminal device. Without further limitation, an element preceded by "comprises a" does not, without more constraints, foreclose the existence of additional identical elements in the process, method, article, or terminal device that comprises the recited element.

[0163] The above detailed description of the control method of a magnetron assembly, the lower computer and the semiconductor process equipment provided by the present application is provided, the principle and implementation mode of the present application are described in the text by applying specific examples, the above embodiment is only used to help understand the method of the present application and its core idea; at the same time, for the general technical personnel in the art, according to the idea of the present application, the specific implementation mode and application range will have changes, and the above description should not be understood as the limitation of the present application.

Claims

1. A control method for a magnetron assembly, characterized in that, Applied to a lower-level machine, the method includes: Obtain the rotation type parameter corresponding to the target step in the process recipe; the target step is any process step in the process recipe that requires control of the magnetron assembly; The control parameter set for the target step is determined based on the parameter generation strategy corresponding to the rotation type parameter; the control parameter set includes a first control parameter with a custom dimension and a second control parameter with a fixed dimension; wherein, the first control parameter with a custom dimension refers to a control parameter set by the user, and the second control parameter with a fixed dimension refers to a control parameter with a fixed value. Control information is sent to the magnetron assembly according to the control parameter set to control the magnetron assembly to rotate according to the control parameters in the control parameter set.

2. The method according to claim 1, characterized in that, The step of determining the control parameter set for the target step according to the parameter generation strategy corresponding to the rotation type parameter includes: Obtain the control parameters that the user has customized for the target step, and obtain the first control parameter corresponding to the rotation type parameter; According to the parameter generation strategy, the control parameters of the fixed dimension corresponding to the rotation type parameters are obtained to obtain the second control parameters; Based on the first control parameter and the second control parameter, a set of control parameters for the target step is generated.

3. The method according to claim 2, characterized in that, When the rotation type parameter is a first type parameter, the first control parameter includes the main boom rotation speed; when the rotation type parameter is a second type parameter, the first control parameter includes the slave boom rotation speed ratio and the main boom rotation speed; when the rotation type parameter is a third type parameter, the first control parameter includes the main boom rotation speed and the slave boom rotation angle; obtaining the fixed-dimensional control parameter corresponding to the rotation type parameter according to the parameter generation strategy includes: If the rotation type parameter is the first type parameter, then the default slave arm speed ratio and default slave arm rotation angle corresponding to the speed ratio dimension and rotation angle dimension are obtained respectively, and the fixed-dimensional control parameters generated by the parameter generation strategy corresponding to the first type parameter are obtained. If the rotation type parameter is the second type parameter, then the default arm rotation angle is obtained, and the fixed-dimensional control parameters generated by the parameter generation strategy corresponding to the second type parameter are obtained. If the rotation type parameter is the third type parameter, then the default slave arm rotation speed ratio is obtained, and the fixed-dimensional control parameters generated by the parameter generation strategy corresponding to the third type parameter are obtained.

4. The method according to claim 2, characterized in that, The target step defines control parameters for all custom dimensions; obtaining the control parameters that the user has custom-set for the target step, and obtaining the first control parameter corresponding to the rotation type parameter, includes: The first control parameter is obtained based on the control parameters of all the custom dimensions defined in the target step.

5. The method according to claim 2, characterized in that, The target step defines control parameters for a first custom dimension; obtaining the control parameters that the user has custom-set for the target step, and obtaining the first control parameters corresponding to the rotation type parameters, includes: Based on the control parameters of the first custom dimension defined in the target step, the third control parameter is obtained; If the number of custom dimensions corresponding to the rotation type parameter is 1, then the third control parameter is used as the first control parameter; If the number of custom dimensions corresponding to the rotation type parameter is greater than 1, then the control parameter of the second custom dimension corresponding to the third control parameter is found from the parameter correspondence; the parameter correspondence is set by the user for the process formula; the third control parameter and its corresponding control parameter of the second custom dimension are used as the first control parameter.

6. The method according to claim 5, characterized in that, When the rotation type parameter is a second type parameter, the third control parameter is the main boom rotation speed; when the rotation type parameter is a third type parameter, the third control parameter is the slave boom rotation angle. The step of searching for the control parameter of the second custom dimension corresponding to the third control parameter from the parameter correspondence includes: When the rotation type parameter is the second type parameter, the slave arm speed ratio corresponding to the main arm speed is found from the preset correspondence between the main arm speed and the speed ratio; When the rotation type parameter is the third type parameter, the main boom speed corresponding to the slave arm rotation angle is found from the preset correspondence between slave arm rotation angle and main boom speed.

7. The method according to claim 5, characterized in that, The method further includes: If the control parameter of the second custom dimension corresponding to the third control parameter does not exist in the correspondence, an alarm message indicating an abnormality in the process formula parameter is output.

8. The method according to any one of claims 1-7, characterized in that, The step of sending control information to the magnetron assembly according to the control parameter set includes: For any control parameter in the set of control parameters, the control parameter is taken as the target parameter; If the target parameter is the main boom rotation speed, then send rotation speed control information carrying the main boom rotation speed to the magnetron assembly; If the target parameter is the slave arm speed ratio, then send speed ratio control information carrying the slave arm speed ratio to the magnetron assembly; If the target parameter is the slave arm rotation angle, then angle control information is generated based on the slave arm rotation angle and sent to the magnetron assembly.

9. The method according to claim 8, characterized in that, The step of using the control parameter as the target parameter includes: Detect whether the control parameters are the same as the current control parameters of the magnetron assembly; If the control parameter is different from the current control parameter, then the control parameter is used as the target parameter.

10. The method according to claim 8, characterized in that, The step of generating angle control information based on the arm rotation angle and sending the angle control information to the magnetron assembly includes: The angle difference between the slave arm rotation angle and the current slave arm rotation angle of the magnetron assembly is taken as the target angle, and the target angular velocity is determined based on the target angle and the current angular velocity of the slave arm; wherein, the total rotation angle corresponding to the speed change process from the current angular velocity to the target angular velocity and the speed change process from the target angular velocity to the current angular velocity is not greater than the target angle; The duration of the uniform motion process is determined based on the target angular velocity and the difference between the target angle and the total rotation angle. According to the duration of the uniform speed process, a first control message and a second control message are sent to the magnetron assembly to control the magnetron assembly to rotate the slave arm by the target angle; the first control message and the second control message respectively carry the target angular velocity and the current angular velocity.

11. The method according to claim 10, characterized in that, The step of sending first control information and second control information to the magnetron assembly according to the duration of the uniform speed process includes: Send the first control information to instruct the magnetron assembly to adjust the slave arm from the current angular velocity to the target angular velocity; Upon receiving the confirmation information returned by the magnetron assembly, after the duration of the constant velocity process, the second control information is sent to instruct the magnetron assembly to adjust the slave arm from the target angular velocity to the current angular velocity; the confirmation information is returned after the slave arm has been adjusted from the current angular velocity to the target angular velocity.

12. The method according to any one of claims 1-7, characterized in that, The method further includes: If the output value of the sputtering power supply defined in the target step is not 0, the duration of the continuous process steps with non-zero output values ​​starting from the target step is determined as the target duration. Based on the target duration and the main boom rotation speed in the control parameter set, determine the number of rotations corresponding to the main boom rotation speed; If the number of rotations is not an integer, the main boom rotation speed is adjusted; wherein the adjusted main boom rotation speed corresponds to an integer number of rotations within the target duration.

13. The method according to claim 8, characterized in that, The method further includes: When the output value of the sputtering power supply defined in the target step is 0, the slave arm angle deviation of the magnetron assembly is obtained; If the angle deviation of the slave arm exceeds a preset deviation threshold, the step of generating angle control information based on the rotation angle of the slave arm and sending the angle control information to the magnetron assembly is re-executed.

14. A control method for a magnetron assembly, characterized in that, Applied to a host computer, the method further includes: In response to the process recipe editing operation, the recipe input interface is displayed; the recipe input interface includes a rotation type parameter input area and a custom dimension first control parameter input area; The system receives the process formula input through the formula input interface and sends the process formula to the lower-level computer so that the lower-level computer can control the magnetron assembly according to any one of claims 1 to 13.

15. The method according to claim 14, characterized in that, The method further includes: Display the relationship input interface; Receive control parameters for a first custom dimension and control parameters for a second custom dimension input from the relationship input interface; Based on the control parameters of the first custom dimension and the control parameters of the second custom dimension, a parameter correspondence is generated and sent to the lower-level machine.

16. A lower-level machine, characterized in that, The lower-level machine is used to implement the method of any one of claims 1 to 13.

17. A semiconductor process apparatus, characterized in that, The semiconductor process equipment includes a reaction chamber equipped with a magnetron assembly, a host computer, and a slave computer as described in claim 16; the host computer provides the slave computer with a process recipe according to any one of claims 14 to 15.

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