Magnetic sensor

Abstract

This magnetic sensor is provided with: a substrate having a reference plane; a support member having an inclined surface; and a magnetoresistive effect element disposed on the inclined surface. The magnetoresistive effect element has a lower surface, an upper surface, and a first side surface and a second side surface connecting the lower surface and the upper surface. The first side surface is positioned further forward than the second side surface in a first direction that is a direction along the inclined surface and that is closer to the reference plane. At least a portion of the first side surface is located closer to the second side surface than a first virtual plane that intersects a first corner existing at a position where the upper surface intersects the first side surface and is perpendicular to the reference plane.

Description

TECHNICAL FIELD

[0001] The present technology relates to a magnetic sensor including a magnetic resistance effect element disposed on an inclined surface. BACKGROUND

[0002] In recent years, magnetic sensors using magnetic resistance effect elements are utilized for various uses. In a system including a magnetic sensor, it is sometimes desired to detect a magnetic field including a component in a direction perpendicular to a surface of a substrate by a magnetic resistance effect element disposed on the substrate. In this case, by disposing a soft magnetic body that converts a magnetic field in a direction perpendicular to the surface of the substrate into a magnetic field in a direction parallel to the surface of the substrate, or by disposing a magnetic resistance effect element on an inclined surface formed on the substrate, it is possible to detect a magnetic field including a component in a direction perpendicular to the surface of the substrate.

[0003] In U.S. Patent Application Publication No. 2008 / 0316654 Al, a three-axis magnetic sensor is disclosed that has a plurality of giant magnetic resistance effect elements formed on a flat surface and a plurality of giant magnetic resistance effect elements formed on an inclined surface. In U.S. Patent Application Publication No. 2021 / 0302511 Al, a magnetic sensor is disclosed that has a plurality of magnetic resistance effect elements disposed on an inclined surface. In these magnetic sensors, the side surface of the magnetic resistance effect element becomes a right conical shape with respect to the inclined surface.

[0004] In a magnetic sensor, in order to suppress a change in output when the strength of an applied magnetic field becomes zero, sometimes a free layer is made to have shape magnetic anisotropy. However, if the side surface of the magnetic resistance effect element becomes a conical shape, the shape magnetic anisotropy of the free layer becomes small. The shape magnetic anisotropy of the free layer can be made large by reducing the width of the magnetic resistance effect element. However, in this case, the sensitivity of the magnetic resistance effect element decreases. These problems become significant in the case where the magnetic resistance effect element is disposed on an inclined surface. SUMMARY

[0005] The present technology aims to provide a magnetic sensor that can suppress the occurrence of problems due to the shape of the side surface of a magnetic resistance effect element disposed on an inclined surface.

[0006] The magnetic sensor of one embodiment of the present technology includes a substrate including a reference plane, a support member disposed over the substrate and having an inclined plane inclined with respect to the reference plane, and a magnetoresistance effect element disposed over the inclined plane. The magnetoresistance effect element includes a lower surface opposite to the inclined plane, an upper surface on the opposite side of the lower surface, and a first side surface and a second side surface connecting the lower surface and the upper surface. The first side surface is located more forward than the second side surface in a first direction along the inclined plane and close to the reference plane. The second side surface is located more forward than the first side surface in a second direction along the inclined plane and away from the reference plane. At least a part of the first side surface is located closer to the second side surface than a first virtual plane intersecting a first corner portion at a position where the upper surface and the first side surface intersect and being perpendicular to the reference plane.

[0007] In the magnetic sensor of one embodiment of the present technology, the magnetoresistance effect element is disposed over the inclined plane. At least a part of the first side surface of the magnetoresistance effect element is located closer to the second side surface of the magnetoresistance effect element than a first virtual plane. Thus, according to one embodiment of the present technology, the problem of the shape of the side surface of the magnetoresistance effect element disposed over the inclined plane can be suppressed.

[0008] Other objects, features, and advantages of the present technology will become more fully understood from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0009] Figure 1 FIG. 1 is a perspective view of a magnetic sensor device including a magnetic sensor of a first example embodiment of the present technology.

[0010] Figure 2 FIG. 2 is a plan view of the magnetic sensor device illustrated in FIG. 1. Figure 1

[0011] Figure 3 FIG. 3 is a functional block diagram of a structure of the magnetic sensor device illustrated in FIG. 1. Figure 1

[0012] Figure 4 FIG. 4 is a circuit diagram of a circuit structure of a first detection circuit in the first example embodiment of the present technology.

[0013] Figure 5 FIG. 5 is a circuit diagram of a circuit structure of a second detection circuit in the first example embodiment of the present technology.

[0014] Figure 6 FIG. 6 is a circuit diagram of a circuit structure of a third detection circuit in the first example embodiment of the present technology.

[0015] Figure 7 ​​is a plan view showing a portion of the first chip in the first exemplary embodiment of the present technology.

[0016] Figure 8 is a cross-sectional view showing a portion of the first chip in the first exemplary embodiment of the present technology.

[0017] Figure 9 is a plan view showing a portion of the second chip in the first exemplary embodiment of the present technology.

[0018] Figure 10 is a cross-sectional view showing a portion of the second chip in the first exemplary embodiment of the present technology.

[0019] Figure 11 is a side view showing a magnetoresistive effect element in the first exemplary embodiment of the present technology.

[0020] Figure 12 is a cross-sectional view showing a magnetoresistive effect element, a lower electrode, and a support member in the first exemplary embodiment of the present technology.

[0021] Figure 13 is a cross-sectional view showing Figure 12 a magnetoresistive effect element shown in FIG. 6.

[0022] Figure 14 is a cross-sectional view showing one process in a manufacturing method of a magnetic sensor in the first exemplary embodiment of the present technology.

[0023] Figure 15 is a cross-sectional view showing a process following Figure 14 the process shown in FIG. 6.

[0024] Figure 16 is a cross-sectional view showing a process following Figure 15 the process shown in FIG. 7.

[0025] Figure 17 is a cross-sectional view showing a process following Figure 16 the process shown in FIG. 8.

[0026] Figure 18 is a cross-sectional view showing a process following Figure 17 the process shown in FIG. 9.

[0027] Figure 19 is a cross-sectional view showing a process following Figure 18 the process shown in FIG. 10.

[0028] Figure 20 is a cross-sectional view showing a process following Figure 19 the process shown in FIG. 11.

[0029] Figure 21 is a cross-sectional view showingFigure 20 A cross-sectional view of a step of the illustrated procedure.

[0030] Figure 22 is a cross-sectional view of a step of the illustrated procedure. Figure 21 A cross-sectional view of a step of the illustrated procedure.

[0031] Figure 23 is a cross-sectional view of a step of the illustrated procedure. Figure 22 A cross-sectional view of a step of the illustrated procedure.

[0032] Figure 24 is a cross-sectional view of a step of the illustrated procedure. Figure 23 A cross-sectional view of a step of the illustrated procedure.

[0033] Figure 25 is a cross-sectional view of a step of the illustrated procedure. Figure 24 A cross-sectional view of a step of the illustrated procedure.

[0034] Figure 26 is a cross-sectional view of a step of the illustrated procedure. Figure 25 A cross-sectional view of a step of the illustrated procedure.

[0035] Figure 27 is a cross-sectional view of a step of the manufacturing method of a magnetic sensor of the second exemplary embodiment of the present technology.

[0036] Figure 28 is a cross-sectional view of a step of the illustrated procedure. Figure 27 A cross-sectional view of a step of the illustrated procedure.

[0037] Figure 29 is a cross-sectional view of a step of the illustrated procedure. Figure 28 A cross-sectional view of a step of the illustrated procedure.

[0038] Figure 30 is a cross-sectional view of a step of the illustrated procedure. Figure 29 A cross-sectional view of a step of the illustrated procedure.

[0039] Figure 31 is a cross-sectional view of a magnetoresistance effect element in the third exemplary embodiment of the present technology.

[0040] Figure 32 is a cross-sectional view of a magnetoresistance effect element, a lower electrode, and a support member in the fourth exemplary embodiment of the present technology.

[0041] Figure 33 is a perspective view of a magnetic sensor of the fifth exemplary embodiment of the present technology.

[0042] Figure 34 is a cross-sectional view of a part of a magnetic sensor in the fifth exemplary embodiment of the present technology.

[0043] Figure 35is a cross-sectional view showing a portion of the second chip in the sixth exemplary embodiment of the present technology. DETAILED DESCRIPTION

[0044] [First Exemplary Embodiment]

[0045] Hereinafter, exemplary embodiments of the present technology will be described in detail with reference to the drawings. First, the structure of a magnetic sensor device including a magnetic sensor of a first exemplary embodiment of the present technology will be described with reference to Figures 1-3 Figure 1 is a perspective view showing the magnetic sensor device 100. Figure 2 is a plan view showing the magnetic sensor device 100. Figure 3 is a functional block diagram showing the structure of the magnetic sensor device 100.

[0046] The magnetic sensor device 100 includes a magnetic sensor 1. The magnetic sensor 1 is composed of a first chip 2 and a second chip 3. The magnetic sensor device 100 also includes a support 4 that supports the first and second chips 2, 3. The first chip 2, the second chip 3, and the support 4 each have a cuboid shape. The support 4 has a reference plane 4a as an upper surface, a lower surface on the opposite side of the reference plane 4a, and four side surfaces connecting the reference plane 4a and the lower surface.

[0047] Here, the reference coordinate system in the exemplary embodiments will be described with reference to Figure 1 and Figure 2 The reference coordinate system is a coordinate system with the magnetic sensor device 100 as a reference, and is an orthogonal coordinate system defined by three axes. In the reference coordinate system, an X direction, a Y direction, and a Z direction are defined. The X direction, the Y direction, and the Z direction are orthogonal to each other. In the exemplary embodiments, in particular, a direction perpendicular to the reference plane 4a of the support 4, that is, a direction from the lower surface of the support 4 toward the reference plane 4a, is set as the Z direction. In addition, a direction opposite to the X direction is set as an -X direction, a direction opposite to the Y direction is set as a -Y direction, and a direction opposite to the Z direction is set as a -Z direction. The three axes defining the reference coordinate system are an axis parallel to the X direction, an axis parallel to the Y direction, and an axis parallel to the Z direction.

[0048] Hereinafter, a position at the front end in the Z direction with respect to a reference will be referred to as "above", and a position on the opposite side of "above" with respect to a reference will be referred to as "below". In addition, with respect to the constituent elements of the magnetic sensor device 100, a surface located at one end in the Z direction will be referred to as an "upper surface", and a surface located at one end in the -Z direction will be referred to as a "lower surface". In addition, expressions such as "when viewed from the Z direction" mean that an object is observed from a position away from the Z direction.

[0049] ​The first chip 2 has an upper surface 2a and a lower surface which are located on opposite sides of each other, and four side surfaces which connect the upper surface 2a and the lower surface. The second chip 3 has an upper surface 3a and a lower surface which are located on opposite sides of each other, and four side surfaces which connect the upper surface 3a and the lower surface.

[0050] The first chip 2 is mounted on the reference plane 4a in a posture in which the lower surface of the first chip 2 opposes the reference plane 4a of the support body 4. The second chip 3 is mounted on the reference plane 4a in a posture in which the lower surface of the second chip 3 opposes the reference plane 4a of the support body 4. The first chip 2 and the second chip 3 are joined to the support body 4 by, for example, adhesives 6, 7, respectively.

[0051] The first chip 2 has a plurality of first electrode pads 21 provided on the upper surface 2a. The second chip 3 has a plurality of second electrode pads 31 provided on the upper surface 3a. The support body 4 has a plurality of third electrode pads 41 provided on the reference plane 4a. Although not shown, in the magnetic sensor device 100, corresponding two electrode pads among the plurality of first electrode pads 21, the plurality of second electrode pads 31, and the plurality of third electrode pads 41 are connected to each other by bonding wires.

[0052] The magnetic sensor 1 is provided with a first detection circuit 10, a second detection circuit 20, and a third detection circuit 30. The first chip 2 includes the first detection circuit 10. The second chip 3 includes the second detection circuit 20 and the third detection circuit 30.

[0053] The magnetic sensor device 100 is further provided with a processor 40. The support body 4 includes the processor 40. The first to third detection circuits 10, 20, 30 and the processor 40 are connected via the plurality of first electrode pads 21, the plurality of second electrode pads 31, the plurality of third electrode pads 41, and the plurality of bonding wires.

[0054] The first to third detection circuits 10, 20, 30 each include a plurality of magnetic detection elements, and are configured to detect an object magnetic field and generate at least one detection signal. In the exemplary embodiment, in particular, the plurality of magnetic detection elements are a plurality of magnetoresistance effect elements. Hereinafter, the magnetoresistance effect elements are referred to as MR elements.

[0055] The processor 40 is configured to generate a first detection value, a second detection value, and a third detection value which have a corresponding relationship with components in three directions which are different from each other of a magnetic field of a prescribed reference position, by processing a plurality of detection signals generated by the first to third detection circuits 10, 20, 30. In the exemplary embodiment, in particular, the three directions which are different from each other are two directions which are parallel to the XY plane, and a direction which is parallel to the Z direction. The processor 40 is constituted by, for example, an application specific integrated circuit (ASIC).

[0056] Next, with reference toFigures 3-10 The first to third detection circuits 10, 20, 30 will be described. Figure 4 is a circuit diagram showing the circuit structure of the first detection circuit 10. Figure 5 is a circuit diagram showing the circuit structure of the second detection circuit 20. Figure 6 is a circuit diagram showing the circuit structure of the third detection circuit 30. Figure 7 is a plan view showing a part of the first chip 2. Figure 8 is a sectional view showing a part of the first chip 2. Figure 9 is a plan view showing a part of the second chip 3. Figure 10 is a sectional view showing a part of the second chip 3.

[0057] Here, as shown in Figure 10 , the U direction and the V direction are defined as follows. The U direction is a direction rotated from the Y direction toward the -Z direction. The V direction is a direction rotated from the Y direction toward the Z direction. In the exemplary embodiment, in particular, the U direction is set to a direction rotated from the Y direction by an amount of a, and the V direction is set to a direction rotated from the Y direction by an amount of a. Further, a is an angle larger than 0° and smaller than 90°. In addition, the direction opposite to the U direction is set to the -U direction, and the direction opposite to the V direction is set to the -V direction. The U direction and the V direction are orthogonal to the X direction, respectively.

[0058] The first detection circuit 10 is configured to detect a component of the object magnetic field in a direction parallel to the X direction, and to generate at least one first detection signal having a corresponding relationship with the component. The second detection circuit 20 is configured to detect a component of the object magnetic field in a direction parallel to the U direction, and to generate at least one second detection signal having a corresponding relationship with the component. The third detection circuit 30 is configured to detect a component of the object magnetic field in a direction parallel to the V direction, and to generate at least one third detection signal having a corresponding relationship with the component.

[0059] As shown in Figure 4 , the first detection circuit 10 includes a power supply terminal V1, a ground terminal G1, signal output terminals E11, E12, a first resistance portion R11, a second resistance portion R12, a third resistance portion R13, and a fourth resistance portion R14. The plurality of MR elements of the first detection circuit 10 constitute the first to fourth resistance portions R11, R12, R13, R14.

[0060] The first resistance portion R11 is provided between the power supply terminal V1 and the signal output terminal E11. The second resistance portion R12 is provided between the signal output terminal E11 and the ground terminal G1. The third resistance portion R13 is provided between the signal output terminal E12 and the ground terminal G1. The fourth resistance portion R14 is provided between the power supply terminal V1 and the signal output terminal E12.

[0061] As shown in FIG. 2, the second detection circuit 20 includes a power supply terminal V2, a ground terminal G2, signal output terminals E21, E22, a first resistance portion R21, a second resistance portion R22, a third resistance portion R23, and a fourth resistance portion R24. The plurality of MR elements of the second detection circuit 20 constitute the first to fourth resistance portions R21, R22, R23, and R24. Figure 5

[0062] The first resistance portion R21 is provided between the power supply terminal V2 and the signal output terminal E21. The second resistance portion R22 is provided between the signal output terminal E21 and the ground terminal G2. The third resistance portion R23 is provided between the signal output terminal E22 and the ground terminal G2. The fourth resistance portion R24 is provided between the power supply terminal V2 and the signal output terminal E22.

[0063] As shown in FIG. 3, the third detection circuit 30 includes a power supply terminal V3, a ground terminal G3, signal output terminals E31, E32, a first resistance portion R31, a second resistance portion R32, a third resistance portion R33, and a fourth resistance portion R34. The plurality of MR elements of the third detection circuit 30 constitute the first to fourth resistance portions R31, R32, R33, and R34. Figure 6

[0064] The first resistance portion R31 is provided between the power supply terminal V3 and the signal output terminal E31. The second resistance portion R32 is provided between the signal output terminal E31 and the ground terminal G3. The third resistance portion R33 is provided between the signal output terminal E32 and the ground terminal G3. The fourth resistance portion R34 is provided between the power supply terminal V3 and the signal output terminal E32.

[0065] A voltage or a current of a prescribed magnitude is applied to each of the power supply terminals V1 to V3. The ground terminals G1 to G3 are grounded.

[0066] Hereinafter, the plurality of MR elements of the first detection circuit 10 will be referred to as a plurality of first MR elements 50A, the plurality of MR elements of the second detection circuit 20 will be referred to as a plurality of second MR elements 50B, and the plurality of MR elements of the third detection circuit 30 will be referred to as a plurality of third MR elements 50C. The first to third detection circuits 10, 20, and 30 are constituent elements of the magnetic sensor 1, and thus it can also be said that the magnetic sensor 1 includes the plurality of first MR elements 50A, the plurality of second MR elements 50B, and the plurality of third MR elements 50C. In addition, any MR element is denoted by the reference numeral 50.

[0067] Figure 11 ​​is a side view of the MR element 50. The MR element 50 is a spin valve type MR element. The MR element 50 has a magnetization fixed layer 51 having a magnetization whose direction is fixed, a free layer 53 having a magnetization whose direction can change according to the direction of an object magnetic field which is an external magnetic field, and a gap layer 52 disposed between the magnetization fixed layer 51 and the free layer 53. The MR element 50 can also be a TMR (Tunneling Magneto Resistance Effect) element, or a GMR (Giant Magneto Resistance Effect) element. In the TMR element, the gap layer 52 is a tunnel barrier layer. In the GMR element, the gap layer 52 is a non-magnetic conductive layer. In the MR element 50, the resistance value changes according to the angle formed by the direction of the magnetization of the free layer 53 and the direction of the magnetization of the magnetization fixed layer 51, and the resistance value becomes the minimum value when the angle is 0°, and the resistance value becomes the maximum value when the angle is 180°. In each MR element 50, the free layer 53 has shape anisotropy in which the easy axis direction becomes a direction orthogonal to the direction of the magnetization of the magnetization fixed layer 51. Further, as a means of setting a prescribed direction to the easy axis of the free layer 53, a magnet that applies a bias magnetic field to the free layer 53 can also be used.

[0068] The magnetization fixed layer 51 can also be a so-called self-pinning type fixed layer (Synthetic Ferr i Pinned layer, SFP layer). The self-pinning type fixed layer has a laminated ferrite structure in which a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer are laminated, and the two ferromagnetic layers are antiferromagnetically coupled.

[0069] The MR element 50 also has a cap layer 54 disposed on the free layer 53. The cap layer 54 is formed of, for example, a non-magnetic conductive material such as Ru, Ta, or the like.

[0070] Further, the configuration of the layers 51 to 53 in the MR element 50 can also be reversed from the configuration shown in Figure 11

[0071] In Figures 4-6 , the solid arrow indicates the direction of the magnetization of the magnetization fixed layer 51 of the MR element 50. In Figure 4 the example shown, the direction of the magnetization of the magnetization fixed layer 51 of each of the first and third resistance portions R11, R13 is the X direction. The direction of the magnetization of the magnetization fixed layer 51 of each of the second and fourth resistance portions R12, R14 is the -X direction. In addition, the free layer 53 of each of the plurality of first MR elements 50A has shape anisotropy in which the easy axis direction becomes a direction parallel to the Y direction.

[0072] In Figure 5 ​In the example shown, the magnetization direction of the magnetization fixing layer 51 of the first and third resistors R21 and R23 is the U direction. The magnetization direction of the magnetization fixing layer 51 of the second and fourth resistors R22 and R24 is the -U direction. In addition, the free layer 53 of each of the plurality of second MR elements 50B has a shape anisotropy in which the easy magnetization axis is parallel to the X direction.

[0073] exist Figure 6 In the example shown, the magnetization direction of the magnetization fixing layer 51 of the first and third resistors R31 and R33 is the V direction. The magnetization direction of the magnetization fixing layer 51 of the second and fourth resistors R32 and R34 is the -V direction. In addition, the free layer 53 of each of the plurality of third MR elements 50C has a shape anisotropy in which the easy magnetization axis is parallel to the X direction.

[0074] Furthermore, from the viewpoint of precision in manufacturing the MR element 50, the magnetization direction of the magnetization fixing layer 51 can be slightly deviated from the aforementioned direction. Alternatively, the magnetization of the magnetization fixing layer 51 can be configured to include a magnetization component with the aforementioned direction as the primary component. In this case, the magnetization direction of the magnetization fixing layer 51 becomes the aforementioned direction or approximately the aforementioned direction.

[0075] The magnetic sensor 1 may also include a magnetic field generator (not shown) configured to apply a magnetic field in a predetermined direction to the free layer 53 of each of the plurality of first MR elements 50A, the plurality of second MR elements 50B, and the plurality of third MR elements 50C.

[0076] The specific structures of the first chip 2 and the second chip 3 will be described in detail below. Figure 8 express Figure 7 A portion of the cross section at the location indicated by line 8-8.

[0077] The first chip 2 includes a substrate 201 having an upper surface 201a, insulating layers 202, 203, 204, and 205, a plurality of lower electrodes 61A, and a plurality of upper electrodes 62A. The upper surface 201a of the substrate 201 is arranged parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 201a of the substrate 201. Furthermore, the first chip 2 is a component of the magnetic sensor 1; therefore, it can also be said that the magnetic sensor 1 includes the substrate 201, insulating layers 202-205, a plurality of lower electrodes 61A, and a plurality of upper electrodes 62A.

[0078] An insulating layer 202 is disposed on a substrate 201. A plurality of lower electrodes 61A are disposed on the insulating layer 202. A plurality of first MR elements 50A are disposed on the plurality of lower electrodes 61A. An insulating layer 203 is disposed on the plurality of lower electrodes 61A and surrounding the plurality of first MR elements 50A. An insulating layer 204 is disposed on the insulating layer 202 and surrounding the plurality of lower electrodes 61A and the insulating layer 203. A plurality of upper electrodes 62A are disposed on the plurality of first MR elements 50A and the insulating layer 203. An insulating layer 205 is disposed on the plurality of upper electrodes 62A and the insulating layers 203 and 204. Furthermore, in Figure 7 The diagram shows the components of the first chip 2, including an insulating layer 202 and a plurality of first MR elements 50A.

[0079] The upper surface 201a of the substrate 201 is parallel to the XY plane, and the upper surfaces of the plurality of lower electrodes 61A are also parallel to the XY plane. Therefore, it can be said that the plurality of first MR elements 50A are disposed on a plane parallel to the XY plane.

[0080] like Figure 7 As shown, multiple first MR elements 50A are arranged in multiples in both the X and Y directions. The multiple first MR elements 50A are connected in series via multiple lower electrodes 61A and multiple upper electrodes 62A. Furthermore, when viewed from the Z direction, two adjacent first MR elements 50A in a direction parallel to the X direction may be offset in a direction parallel to the Y direction, or they may remain aligned.

[0081] Here, refer to Figure 11 The connection method of multiple first MR elements 50A is described in detail. Figure 11 In the accompanying drawings, reference numeral 61 indicates the lower electrode corresponding to any MR element 50, and reference numeral 62 indicates the upper electrode corresponding to any MR element 50. For example... Figure 11 As shown, each lower electrode 61 has an elongated shape. A gap is formed between two adjacent lower electrodes 61 along their long sides. MR elements 50 are disposed near both ends of the upper surface of the lower electrode 61 along their long sides. Furthermore, each upper electrode 62 has an elongated shape, and two adjacent MR elements 50 disposed on adjacent lower electrodes 61 along their long sides are electrically connected to each other.

[0082] Although not shown, one MR element 50 located at one end of a column of a plurality of MR elements 50 arranged in a column is connected to another MR element 50 located at one end of a column of other plurality of MR elements 50 in a direction intersecting the longitudinal direction of the lower electrode 61. The two MR elements 50 are connected to each other by an electrode not shown. The electrode not shown can also be an electrode connecting the lower surfaces of the two MR elements 50 to each other or the upper surfaces of the two MR elements 50 to each other.

[0083] In Figure 11 The MR element 50 shown is a first MR element 50A, Figure 11 The lower electrode 61 shown corresponds to the lower electrode 61A, Figure 11 The upper electrode 62 shown corresponds to the upper electrode 62A. In this case, the longitudinal direction of the lower electrode 61 becomes a direction parallel to the Y direction.

[0084] Next, the structure of the second chip 3 will be described with reference to Figure 9 and Figure 10 . Figure 10 A part of the cross section of the position indicated by the line 10-10 in Figure 9 .

[0085] The second chip 3 includes a substrate 301 having an upper surface 301a, insulating layers 302, 303, 304, 305, 306, 307, a plurality of lower electrodes 61B, a plurality of lower electrodes 61C, a plurality of upper electrodes 62B, and a plurality of upper electrodes 62C. The upper surface 301a of the substrate 301 is parallel to the XY plane. The Z direction is also one direction perpendicular to the upper surface 301a of the substrate 301. Further, the second chip 3 is a constituent element of the magnetic sensor 1, and thus it can also be said that the magnetic sensor 1 includes the substrate 301, the insulating layers 302 to 307, the plurality of lower electrodes 61B, the plurality of lower electrodes 61C, the plurality of upper electrodes 62B, and the plurality of upper electrodes 62C.

[0086] The insulating layers 302, 303, 304 are sequentially stacked on the substrate 301. The plurality of lower electrodes 61B and the plurality of lower electrodes 61C are disposed on the insulating layer 304. The plurality of second MR elements 50B is disposed on the plurality of lower electrodes 61B. The plurality of third MR elements 50C is disposed on the plurality of lower electrodes 61C. The insulating layer 305 is disposed around the plurality of second MR elements 50B on the plurality of lower electrodes 61B and around the plurality of third MR elements 50C on the plurality of lower electrodes 61C.

[0087] The insulating layer 306 is disposed on the insulating layer 304 so as to surround the plurality of lower electrodes 61B, the plurality of lower electrodes 61C, and the insulating layer 305. The plurality of upper electrodes 62B is disposed on the plurality of second MR elements 50B and the insulating layer 305. The plurality of upper electrodes 62C is disposed on the plurality of third MR elements 50C and the insulating layer 305. The insulating layer 307 is disposed on the plurality of upper electrodes 62B, the plurality of upper electrodes 62C, and the insulating layers 305 and 306.

[0088] The second chip 3 includes a support member 310 that supports the plurality of second MR elements 50B and the plurality of third MR elements 50C. The support member 310 has at least one inclined surface that is inclined with respect to the upper surface 301a of the substrate 301. In the example embodiment, in particular, the support member 310 is composed of the insulating layers 302, 303, and 304. Further, in the example embodiment, the support member 310 is composed of the insulating layers 302, 303, and 304, and the plurality of second MR elements 50B and the plurality of third MR elements 50C are disposed on the support member 310. Figure 9 In the example embodiment, the support member 310, the plurality of second MR elements 50B, and the plurality of third MR elements 50C are included in the constituent elements of the second chip 3.

[0089] The support member 310 has a plurality of convex surfaces 310c that respectively extend in a direction (Z direction) away from the upper surface 301a of the substrate 301. The plurality of convex surfaces 310c respectively extend in a direction parallel to the X direction. The entire shape of each convex surface 310c is a semicylindrical curved surface formed by moving the curved shape (arched shape) of the convex surface 310c shown in FIG. 6 along a direction parallel to the X direction. Further, the plurality of convex surfaces 310c are arranged at a prescribed interval in a direction parallel to the Y direction. Figure 10 The curved shape (arched shape) of the convex surface 310c shown in FIG. 6 is a semicylindrical curved surface formed by moving the curved shape (arched shape) of the convex surface 310c along a direction parallel to the X direction. Further, the plurality of convex surfaces 310c are arranged at a prescribed interval in a direction parallel to the Y direction.

[0090] Each of the plurality of convex surfaces 310c has an upper end portion that is farthest from the upper surface 301a of the substrate 301. In the example embodiment, the upper end portion of each of the plurality of convex surfaces 310c extends in a direction parallel to the X direction. Here, attention is directed to an arbitrary one of the plurality of convex surfaces 310c. The convex surface 310c includes a first inclined surface 310a and a second inclined surface 310b that face in mutually different directions. The first inclined surface 310a is a surface of the convex surface 310c that is closer to the Y direction side than the upper end portion of the convex surface 310c. The second inclined surface 310b is a surface of the convex surface 310c that is closer to the -Y direction side than the upper end portion of the convex surface 310c. In the example embodiment, the first inclined surface 310a and the second inclined surface 310b are included in the constituent elements of the second chip 3. Figure 9 In the example embodiment, the boundary between the first inclined surface 310a and the second inclined surface 310b is indicated by a broken line.

[0091] The upper end portion of the convex surface 310c can also be the boundary between the first inclined surface 310a and the second inclined surface 310b. In this case, the upper end portion of the convex surface 310c is indicated by a broken line. Figure 9 The broken line shown in FIG. 6 indicates the upper end portion of the convex surface 310c.

[0092] The upper surface 301a of the substrate 301 is parallel to the XY plane. The first inclined surface 310a and the second inclined surface 310b are inclined with respect to the upper surface 301a of the substrate 301, that is, the XY plane. In a cross section perpendicular to the upper surface 301a of the substrate 301, the interval between the first inclined surface 310a and the second inclined surface 310b becomes smaller as it is farther from the upper surface 301a of the substrate 301.

[0093] In the example embodiment, since there are a plurality of convex surfaces 310c, there are also a plurality of first inclined surfaces 310a and a plurality of second inclined surfaces 310b, respectively. The support member 310 has a plurality of first inclined surfaces 310a and a plurality of second inclined surfaces 310b.

[0094] The support member 310 also has a flat surface 310d present around the plurality of convex surfaces 310c. The flat surface 310d is a surface parallel to the upper surface 301a of the substrate 301. The plurality of convex surfaces 310c respectively protrude in the Z direction from the flat surface 310d. In the example embodiment, the plurality of convex surfaces 310c are arranged at prescribed intervals. Therefore, there is a flat surface 310d between two convex surfaces 310c adjacent in the Y direction.

[0095] In the example embodiment, the plurality of convex surfaces 310c and the flat surface 310d are actually formed by the insulating layer 303. That is, the insulating layer 303 includes a plurality of protruding portions respectively protruding in the Z direction, and a flat portion present around the plurality of protruding portions. The plurality of protruding portions respectively extend in a direction parallel to the U direction, and have upper surfaces having shapes corresponding to the convex surfaces 310c. In addition, the plurality of protruding portions are arranged at prescribed intervals in a direction parallel to the V direction. The thickness (dimension in the Z direction) of the flat portion is actually constant. The insulating layer 304 has an actually constant thickness (dimension in the Z direction) formed along the upper surface of the insulating layer 303. As a result, the upper surface of the insulating layer 304 becomes the plurality of convex surfaces 310c and the flat surface 310d.

[0096] Furthermore, the insulating layer 302 has an actually constant thickness (dimension in the Z direction) formed along the lower surface of the insulating layer 303.

[0097] Multiple lower electrodes 61B are disposed on multiple first inclined surfaces 310a. Multiple lower electrodes 61C are disposed on multiple second inclined surfaces 310b. As described above, the first inclined surfaces 310a and the second inclined surfaces 310b are inclined relative to the upper surface 301a of the substrate 301, i.e., the XY plane. Therefore, the upper surfaces of each of the multiple lower electrodes 61B and each of the multiple lower electrodes 61C are also inclined relative to the XY plane. Thus, it can be said that multiple second MR elements 50B and multiple third MR elements 50C are disposed on inclined surfaces inclined relative to the XY plane. The support member 310 is a component for supporting the multiple second MR elements 50B and multiple third MR elements 50C in such a manner that they are inclined relative to the XY plane.

[0098] Furthermore, in the exemplary embodiment, the first inclined surface 310a is curved. Therefore, the second MR element 50B is bent along the curved surface (first inclined surface 310a). In the exemplary embodiment, for convenience, the magnetization direction of the magnetization fixing layer 51 of the second MR element 50B is defined as a straight line direction as described above. The magnetization direction of the magnetization fixing layer 51 of the second MR element 50B, i.e., the U direction and the -U direction, is also the direction of the tangent extending from the portion of the first inclined surface 310a that is adjacent to the second MR element 50B.

[0099] Similarly, in the exemplary embodiment, the second inclined surface 310b is curved. Therefore, the third MR element 50C is bent along the curved surface (the second inclined surface 310b). In the exemplary embodiment, for convenience, the magnetization direction of the magnetization fixing layer 51 of the third MR element 50C is defined as a straight line direction as described above. The magnetization direction of the magnetization fixing layer 51 of the third MR element 50C, namely the V direction and the -V direction, is also the direction of the tangent extending from the portion of the second inclined surface 310b that is adjacent to the third MR element 50C.

[0100] like Figure 9 As shown, a plurality of second MR elements 50B are arranged in multiples in both the X and Y directions. On a first inclined surface 310a, the plurality of second MR elements 50B are arranged in a column. Similarly, a plurality of third MR elements 50C are arranged in multiples in both the X and Y directions. On a second inclined surface 310b, the plurality of third MR elements 50C are arranged in a column. In an exemplary embodiment, the columns of the plurality of second MR elements 50B and the columns of the plurality of third MR elements 50C are alternately arranged in a direction parallel to the Y direction.

[0101] Further, one second MR element 50B and one third MR element 50C adjacent to each other can or can not be offset in a direction parallel to the X direction when viewed from the Z direction. Further, two second MR elements 50B adjacent to each other sandwiching one third MR element 50C can or can not be offset in a direction parallel to the X direction when viewed from the Z direction. Further, two third MR elements 50C adjacent to each other sandwiching one second MR element 50B can or can not be offset in a direction parallel to the X direction when viewed from the Z direction.

[0102] The plurality of second MR elements 50B are connected in series through the plurality of lower electrodes 61B and the plurality of upper electrodes 62B. The above description regarding the connection method of the plurality of first MR elements 50A is also applicable to the connection method of the plurality of second MR elements 50B. In this case, the long side direction of the lower electrode 61 becomes a direction parallel to the X direction. Figure 11 In the case where the MR element 50 illustrated is a second MR element 50B, Figure 11 The lower electrode 61 illustrated corresponds to the lower electrode 61B. Figure 11 The upper electrode 62 illustrated corresponds to the upper electrode 62B. Further, in this case, the long side direction of the lower electrode 61 becomes a direction parallel to the X direction.

[0103] Similarly, the plurality of third MR elements 50C are connected in series through the plurality of lower electrodes 61C and the plurality of upper electrodes 62C. The above description regarding the connection method of the plurality of first MR elements 50A is also applicable to the connection method of the plurality of third MR elements 50C. In this case, the long side direction of the lower electrode 61 becomes a direction parallel to the X direction. Figure 11 In the case where the MR element 50 illustrated is a third MR element 50C, Figure 11 The lower electrode 61 illustrated corresponds to the lower electrode 61C. Figure 11 The upper electrode 62 illustrated corresponds to the upper electrode 62C. Further, in this case, the long side direction of the lower electrode 61 becomes a direction parallel to the X direction.

[0104] Next, the first to third detection signals will be described. First, reference will be made to FIG. 6. Figure 4 The first detection signal will be described. When the strength of the component of the object magnetic field in the direction parallel to the X direction changes, the resistance values of the respective resistance portions R11 to R14 of the first detection circuit 10 change in such a manner that the resistance values of the resistance portions R11, R13 increase and the resistance values of the resistance portions R12, R14 decrease, or the resistance values of the resistance portions R11, R13 decrease and the resistance values of the resistance portions R12, R14 increase. Thereby, the potentials of the respective signal output terminals E11, E12 change. The first detection circuit 10 is configured to generate a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S11 and generate a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S12.

[0105] Next, the second detection signal will be described with reference to Figure 5 When the strength of the component of the object magnetic field in the direction parallel to the U direction changes, the resistance values of the resistance sections R21 to R24 of the second detection circuit 20 each change in such a manner that the resistance values of the resistance sections R21, R23 increase and the resistance values of the resistance sections R22, R24 decrease, or the resistance values of the resistance sections R21, R23 decrease and the resistance values of the resistance sections R22, R24 increase. Thereby, the potentials of the signal output terminals E21, E22 each change. The second detection circuit 20 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the second detection signal S21 and generate a signal corresponding to the potential of the signal output terminal E22 as the second detection signal S22.

[0106] Next, the third detection signal will be described with reference to Figure 6 When the strength of the component of the object magnetic field in the direction parallel to the V direction changes, the resistance values of the resistance sections R31 to R34 of the third detection circuit 30 each change in such a manner that the resistance values of the resistance sections R31, R33 increase and the resistance values of the resistance sections R32, R34 decrease, or the resistance values of the resistance sections R31, R33 decrease and the resistance values of the resistance sections R32, R34 increase. Thereby, the potentials of the signal output terminals E31, E32 each change. The third detection circuit 30 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the third detection signal S31 and generate a signal corresponding to the potential of the signal output terminal E32 as the third detection signal S32.

[0107] Next, the operation of the processor 40 will be described. The processor 40 is configured to generate a first detection value based on the first detection signals S11, S12. The first detection value is a detection value corresponding to the component of the object magnetic field in the direction parallel to the X direction. Hereinafter, the first detection value will be denoted by the symbol Sx.

[0108] In the example embodiment, the processor 40 generates the first detection value Sx by including an operation of taking the difference S11-S12 of the first detection signal S11 and the first detection signal S12. The first detection value Sx can also be the difference S11-S12 itself, or a value obtained by applying a prescribed correction such as gain adjustment and offset adjustment to the difference S11-S12.

[0109] The processor 40 is configured to generate a second detection value and a third detection value based on the second detection signals S21, S22 and the third detection signals S31, S32. The second detection value is a detection value corresponding to a component of the object magnetic field in a direction parallel to the Y direction. The third detection value is a detection value corresponding to a component of the object magnetic field in a direction parallel to the Z direction. Hereinafter, the second detection value is denoted by a symbol Sy, and the third detection value is denoted by a symbol Sz.

[0110] The processor 40 generates the second and third detection values Sy, Sz, for example, as follows. The processor 40 first generates a value S1 by an operation including taking a difference S21-S22 of the second detection signal S21 and the second detection signal S22, and generates a value S2 by an operation including taking a difference S31-S32 of the third detection signal S31 and the third detection signal S32. Next, the processor 40 calculates values S3, S4 using the following equations (1), (2).

[0111] S3 = (S2 + S1) / (2 cos α)... (1)

[0112] S4 = (S2 - S1) / (2 sin α)... (2)

[0113] The second detection value Sy can also be the value S3 itself, or a value obtained by applying a prescribed correction such as gain adjustment and offset adjustment to the value S3. Similarly, the third detection value Sz can also be the value S4 itself, or a value obtained by applying a prescribed correction such as gain adjustment and offset adjustment to the value S4.

[0114] Next, the structure of the magnetic sensor 1 will be described with reference to Figure 12 and Figure 13 to the structure of the magnetic sensor 1. Figure 12 is a cross-sectional view of the MR element 50, the lower electrode 61, and the support member 310. Figure 13 is a cross-sectional view of the MR element 50. Figure 12 is a cross-sectional view of the MR element 50.

[0115] Figure 12 represents a cross section intersecting the MR element 50 disposed on an arbitrary inclined surface 310e, that is, a cross section parallel to the YZ plane. Hereinafter, the cross section parallel to the YZ plane will be referred to as a YZ cross section. Figure 12 The YZ cross section shown in Figure 10 Similarly, the YZ cross section of the cross section of the MR element 50 is observed from a position in front of the X direction. In this case, the MR element 50, the lower electrode 61, and the inclined surface 310e correspond to the second MR element 50B, the lower electrode 61B, and the first inclined surface 310a, respectively. Alternatively, Figure 12The YZ section shown can also be the YZ section of the MR element 50 viewed from a position in front of it in the -X direction. In this case, the MR element 50, the lower electrode 61, and the inclined surface 310e correspond to the third MR element 50C, the lower electrode 61C, and the second inclined surface 310b, respectively.

[0116] Here, as Figure 12 and Figure 13 As shown, a first direction D1 and a second direction D2 parallel to the YZ plane are defined. The first direction D1 is along the direction of the inclined surface 310e and close to the reference plane. In an exemplary embodiment, the upper surface 301a of the substrate 301 (refer to...) Figure 10 Let the reference plane be defined. The Z direction is a direction perpendicular to the reference plane (the upper surface 301a of the substrate 301). The second direction D2 is a direction along the inclined surface 310e and away from the reference plane (the upper surface 301a of the substrate 301).

[0117] The MR element 50 has: a lower surface 50a opposite to the inclined surface 310e, an upper surface 50b opposite to the lower surface 50a, a first side surface 50c, and a second side surface 50d. The first side surface 50c and the second side surface 50d are located at opposite ends of the MR element 50 in the short side direction. The first side surface 50c is located further in front of the second side surface 50d in the first direction D1, connecting the end of the lower surface 50a in the first direction D1 and the end of the upper surface 50b in the first direction D1. The second side surface 50d is located further in front of the first side surface 50c in the second direction D2, connecting the end of the lower surface 50a in the second direction D2 and the end of the upper surface 50b in the second direction D2.

[0118] The angle between the portion of the inclined surface 310e opposite to the MR element 50 and the reference plane (the upper surface 301a of the substrate 301) is, for example, in the range of 10° to 50°. In an exemplary embodiment, the inclined surface 310e is specifically curved. In this case, the aforementioned angle varies within the aforementioned range. Furthermore, when the inclined surface 310e is planar, the aforementioned angle becomes a constant angle within the aforementioned range.

[0119] exist Figure 13In the attached figures, reference numeral PL1 indicates a first virtual plane that intersects with the first corner Ed1, located at the intersection of the upper surface 50b and the first side surface 50c, and is perpendicular to the reference plane (the upper surface 301a of the substrate 301). Reference numeral PL2 indicates a second virtual plane that intersects with the first corner Ed1 and is perpendicular to the inclined surface 310e. Reference numeral PL3 indicates a third virtual plane that intersects with the second corner Ed2, located at the intersection of the upper surface 50b and the second side surface 50d, and is perpendicular to the reference plane (the upper surface 301a of the substrate 301). Reference numeral PL4 indicates a fourth virtual plane that intersects with the second corner Ed2 and is perpendicular to the inclined surface 310e.

[0120] At least a portion of the first side surface 50c is located closer to the second side surface 50d than the first virtual plane PL1. For example... Figure 13 As shown, in an exemplary embodiment, in particular, the entire first side 50c is positioned closer to the second side 50d than the first virtual plane PL1.

[0121] exist Figure 13 In the example shown, the angle between the first side 50c and the second virtual plane PL2 is 0° or approximately 0°. That is, in Figure 13 In the example shown, the first side 50c is perpendicular or substantially perpendicular to the portion near the first side 50c in the inclined surface 310e. Furthermore, the first side 50c may also be inclined relative to the second virtual plane PL2. The angle between the first side 50c and the second virtual plane PL2 may also be in the range of 0° to 20°.

[0122] Furthermore, the tilt angle of the first side surface 50c can be expressed as the angle between the first side surface 50c and the second virtual plane PL2, as described above, or it can be expressed as the angle between the first side surface 50c and the virtual plane in the tilted surface 310e that is in contact with the portion near the first side surface 50c. When the former angle is in the range of 0° to 20°, the latter angle is in the range of 70° to 90°.

[0123] At least a portion of the second side 50d is located further away from the first side 50c than the third virtual plane PL3. For example... Figure 13 As shown, in an exemplary embodiment, in particular, the second side 50d is positioned further away from the first side 50c than the third virtual plane PL3.

[0124] exist Figure 13 In the example shown, the angle between the second side 50d and the fourth virtual plane PL4 is 0° or approximately 0°. That is, in Figure 13In the example shown, the second side surface 50d is perpendicular or substantially perpendicular to a portion near the second side surface 50d in the inclined surface 310e. In addition, the second side surface 50d can also be inclined with respect to the fourth virtual plane PL4. The angle of the second side surface 50d with respect to the fourth virtual plane PL4 can also be in the range of 0° to 20°.

[0125] In addition, the angle of inclination of the second side surface 50d can also be expressed as the angle of the second side surface 50d with respect to the fourth virtual plane PL4 as described above, or can be expressed as the angle of the second side surface 50d with respect to a virtual plane in the inclined surface 310e that is continuous with the portion near the second side surface 50d. In the case where the former angle is in the range of 0° to 20°, the latter angle becomes in the range of 70° to 90°.

[0126] It is preferable that the first side surface 50c and the second side surface 50d be substantially parallel. That is, it is preferable that the angle of the first side surface 50c with respect to the second side surface 50d be small to some extent. It is preferable that the angle of the first side surface 50c with respect to the second side surface 50d be, for example, smaller than the angle of the second side surface 50d with respect to the third virtual plane PL3.

[0127] Next, a manufacturing method of the magnetic sensor 1 of the example embodiment will be described. The manufacturing method of the magnetic sensor 1 includes a process of manufacturing the first chip 2 and a process of manufacturing the second chip 3.

[0128] First, the process of manufacturing the first chip 2 will be described with reference to FIG. 8. Figure 8 The process of manufacturing the first chip 2 will be described with reference to FIG. 8. In the process of manufacturing the first chip 2, first, the insulating layer 202 is formed on the substrate 201. Next, a metal film is formed on the insulating layer 202. Next, a plurality of first MR elements 50A is formed on the metal film. Next, the insulating layer 203 is formed around the plurality of first MR elements 50A. Next, the metal film and the insulating layer 203 are etched so that the metal film becomes a plurality of lower electrodes 61A. Next, the insulating layer 204 is formed around the plurality of lower electrodes 61A and the insulating layer 203. Next, a plurality of upper electrodes 62A is formed on the plurality of first MR elements 50A and the insulating layer 203. Next, the insulating layer 205 is formed on the plurality of upper electrodes 62A and the insulating layers 203 and 204. Next, a plurality of terminals corresponding to the power terminal V1, the ground terminal G1, and the signal output terminals E11 and E12 are formed, and the like, and the first chip 2 is completed.

[0129] Next, the process of manufacturing the second chip 3 will be described with reference to FIG. 9. Figures 14-26 The process of manufacturing the second chip 3 will be described with reference to FIG. 9. Figures 14-26 A cross section of a laminate in the process of manufacturing the second chip 3 is shown.

[0130] As described above, the magnetic sensor 1 of the example embodiment includes the first chip 2 and the second chip 3. Figure 14In the process of manufacturing the second chip 3, as shown, first, the insulating layers 302, 303 are formed in this order on the substrate 301. Next, a plurality of etching masks are formed on the insulating layer 303. The plurality of etching masks have shapes corresponding to a plurality of convex surfaces 310c of the support member 310 to be formed later. Next, the insulating layer 303 and the plurality of etching masks are etched in a manner to remove the plurality of etching masks. Thus, a plurality of convex surfaces corresponding to the plurality of convex surfaces 310c are formed in the insulating layer 303.

[0131] Next, the insulating layer 304 is formed on the insulating layer 303. Thus, the support member 310 is completed. Next, the metal film 61P is formed on the insulating layer 304.

[0132] Figure 15 The next process is shown. In this process, first, the laminated film 50P which becomes the plurality of second MR elements 50B and the plurality of third MR elements 50C later is formed on the metal film 61P. The laminated film 50P includes all layers constituting the plurality of second MR elements 50B and the plurality of third MR elements 50C. The all layers include a plurality of magnetic layers constituting the magnetization fixed layer 51 and the free layer 53. The laminated film 50P is formed on the first inclined surface 310a, the second inclined surface 310b, and the flat surface 310d of the support member 310.

[0133] Next, the protective layer 81 is formed on the laminated film 50P. The protective layer 81 is a so-called hard mask and is composed of an inorganic material. As the inorganic material forming the protective layer 81, for example, carbon or aluminum oxide can be used. The thickness of the protective layer 81 is, for example, in the range of 15 to 20 nm.

[0134] Figure 16 The next process is shown. In this process, first, the plurality of masks 82B and the plurality of masks 82C are formed. The plurality of masks 82B have shapes corresponding to the plurality of second MR elements 50B. The plurality of masks 82C have shapes corresponding to the plurality of third MR elements 50C.

[0135] The plurality of masks 82B each include a lower layer 821B disposed on the protective layer 81, and an upper layer 822B disposed on the lower layer 821B. The plurality of masks 82C each include a lower layer 821C disposed on the protective layer 81, and an upper layer 822C disposed on the lower layer 821C. The upper layers 822B, 822C are formed of a photoresist patterned by photolithography. The lower layers 821B, 821C are formed of a material dissolved by a developing solution used when the upper layers 822B, 822C are patterned.

[0136] In Figure 16In the illustrated process, next, a first etching process is performed. The first etching process is a process of etching a portion of the protective layer 81 using the plurality of masks 82B and the plurality of masks 82C. The first etching process is performed using reactive ion etching (hereinafter, referred to as RIE). In the first etching process, a portion of the protective layer 81 that is not covered by the plurality of masks 82B and the plurality of masks 82C is removed.

[0137] Figure 17 The next process is shown. In this process, a second etching process is performed. The second etching process is a process of etching a portion of the laminated film 50P using the plurality of masks 82B, the plurality of masks 82C, and the protective layer 81 as etching masks. The second etching process is performed using ion beam etching (hereinafter, referred to as IBE). In the second etching process, the laminated film 50P is etched in such a manner that the laminated film 50P becomes the plurality of second MR elements 50B and the plurality of third MR elements 50C. In the second etching process, in particular, the direction of travel of the ion beam is inclined with respect to a direction perpendicular to the upper surface 301a of the substrate 301, in such a manner that the first and second side surfaces 50c, 50d of each of the plurality of second MR elements 50B and the first and second side surfaces 50c, 50d of each of the plurality of third MR elements 50C are formed on the laminated film 50P. The direction of travel of the ion beam may, for example, also be inclined with respect to a direction parallel to the upper surface 301a of the substrate 301 or a direction close to parallel to the upper surface 301a of the substrate 301.

[0138] Figure 18 The next process is shown. In this process, the insulating layer 305 is formed over the entire upper surface of the laminate while leaving the plurality of masks 82B and the plurality of masks 82C unchanged. Next, as shown in Figure 19 for example, a non-magnetic metal layer 83 composed of Ru is formed over the entire upper surface of the laminate. Next, as shown in Figure 20 the plurality of masks 82B and the plurality of masks 82C are peeled off.

[0139] Figure 21 The next process is shown. In this process, a portion of the insulating layer 305 that is above the protective layer 81 is removed, for example, by wet etching.

[0140] Figure 22 The next process is shown. In this process, the non-magnetic metal layer 83 is removed, for example, by dry etching such as RIE or IBE.

[0141] Figure 23 The next process is shown. In this process, the protective layer 81 is removed. In the case where the protective layer 81 is composed of carbon, the protective layer 81 is removed, for example, by ashing. In the case where the protective layer 81 is composed of aluminum oxide, the protective layer 81 is removed, for example, by wet etching.

[0142] Figure 24 This indicates the next step. In this step, firstly, multiple masks 84B and multiple masks 84C are formed. The multiple masks 84B have shapes corresponding to the multiple lower electrodes 61B. The multiple masks 82C have shapes corresponding to the multiple lower electrodes 61C.

[0143] Multiple masks 84B each include a lower layer 841B disposed on multiple second MR elements 50B and an insulating layer 305, and an upper layer 842B disposed on the lower layer 841B. Multiple masks 84C each include a lower layer 841C disposed on multiple third MR elements 50C and an insulating layer 305, and an upper layer 842C disposed on the lower layer 841C. The upper layers 842B and 842C are formed of the same material as the upper layers 822B and 822C. The lower layers 841B and 841C are formed of the same material as the lower layers 821B and 821C.

[0144] exist Figure 24 In the illustrated process, multiple masks 84B and 84C are then used, for example, to etch the metal film 61P and the insulating layer 305 via IBE. In this etching, the metal film 61P is etched such that it becomes multiple lower electrodes 61B and multiple lower electrodes 61C. Next, while retaining the multiple masks 84B and 84C, an insulating layer 306 is formed over the entire upper surface of the laminate. Then, as... Figure 25 As shown, multiple masks 84B and multiple masks 84C are stripped.

[0145] Figure 26 This indicates the next step. In this step, firstly, multiple upper electrodes 62B are formed on multiple second MR elements 50B and insulating layer 305, and multiple upper electrodes 62C are formed on multiple third MR elements 50C and insulating layer 305. Next, insulating layer 307 is formed on the multiple upper electrodes 62B, multiple upper electrodes 62C, and insulating layers 305 and 306 (see reference). Figure 10 Next, the second chip 3 is completed by forming multiple terminals corresponding to the power supply terminals V2 and V3, the ground terminals G2 and G3, and the signal output terminals E21, E22, E31, and E32.

[0146] As explained above, the manufacturing method of the magnetic sensor 1 of the example embodiment has a step of forming the support member 310 on the substrate 301 and a step of forming the plurality of MR elements 50. The step of forming the plurality of MR elements 50 includes a step of forming the laminated film 50P on the first and second inclined surfaces 310a, 310b of the support member 310, a step of forming the protective layer 81 on the laminated film 50P, a step of forming the plurality of masks 82B and the plurality of masks 82C, a first etching step of etching a portion of the protective layer 81 using the plurality of masks 82B and the plurality of masks 82C, and a second etching step of etching the laminated film 50P using the plurality of masks 82B, the plurality of masks 82C, and the etched protective layer 81 so that the laminated film 50P becomes the plurality of second MR elements 50B and the plurality of third MR elements 50C. In the example embodiment, in particular, the plurality of second MR elements 50B and the plurality of third MR elements 50C are formed at the same time in the second etching step.

[0147] The step of forming the plurality of MR elements 50 further includes a step of forming the insulating layer 305 after the second etching step, and a step of removing the protective layer 81 after the step of forming the insulating layer 305.

[0148] According to the example embodiment, compared with a comparative example in which the laminated film 50P is etched without using the protective layer 81, it is possible to reduce the taper of the first and second side surfaces 50c, 50d of the MR element 50 (the second MR element 50B and the third MR element 50C). That is, in the manufacturing method of the comparative example, the laminated film 50P is etched in a state in which a gap exists between the laminated film 50P and the plurality of masks 82B and the plurality of masks 82C. In the manufacturing method of the comparative example, in order to prevent a portion of the upper surface of the laminated film 50P and its vicinity from being etched and the free layer 53 from being damaged, the laminated film 50P is etched with the direction of travel of the ion beam being perpendicular or substantially perpendicular to the upper surface 301a of the substrate 301. In this case, the direction of travel of the ion beam is inclined with respect to a direction perpendicular to the inclined surfaces 310e (the first inclined surface 310a and the second inclined surface 310b) of the support member 310. As a result, the first and second side surfaces 50c, 50d of the MR element 50 become a tapered shape inclined with respect to a direction perpendicular to the inclined surfaces 310e of the support member 310.

[0149] In contrast, in the example embodiment, the laminated film 50P is covered with the protective layer 81. Therefore, in the example embodiment, when the laminated film 50P is etched, the upper surface of the laminated film 50P and the portion near the upper surface can be prevented from being etched by the protective layer 81. Therefore, in the example embodiment, as described above, the direction in which the ion beam is emitted can be inclined with respect to the direction perpendicular to the upper surface 301a of the substrate 301 to etch the laminated film 50P. Thus, according to the example embodiment, the upper surface of the laminated film 50P and the portion near the upper surface can be prevented from being etched, and the portion of the laminated film 50P closer to the inclined surface 310e of the support member 310 can be etched. Thus, according to the example embodiment, the taper of the first and second side surfaces 50c, 50d of the MR element 50 can be reduced.

[0150] As described above, in the example embodiment, the taper of the first and second side surfaces 50c, 50d of the MR element 50 can be reduced. In the example embodiment, in particular, the first side surface 50c is positioned closer to the second side surface 50d than the first virtual plane PL1 perpendicular to the reference plane (the upper surface 301a of the substrate 301). This feature means that the first side surface 50c approaches the second virtual plane PL2 perpendicular to the inclined surface 310e, and as a result, the taper of the first side surface 50c is reduced.

[0151] However, if the size of the upper surface 50b of the MR element 50 is compared equally, as the taper of the first and second side surfaces 50c, 50d of the MR element 50 is increased, the shape magnetic anisotropy of the free layer 53 is reduced. In addition, if the width of the MR element 50 is reduced in order to increase the shape magnetic anisotropy of the free layer 53, the sensitivity of the MR element 50 is reduced. In contrast, according to the example embodiment, as described above, the taper of the first and second side surfaces 50c, 50d of the MR element 50 can be reduced, and therefore, the occurrence of problems due to the taper shape of the first and second side surfaces 50c, 50d of the MR element 50 can be suppressed.

[0152] [Second Example Embodiment]

[0153] Next, a manufacturing method of the magnetic sensor 1 of the second example embodiment of the present technology will be described. Here, the manufacturing method of the magnetic sensor 1 will be described via a description of a process of manufacturing the second chip 3.

[0154] Hereinafter, the manufacturing method of the magnetic sensor 1 will be described with reference to Figures 27-30 A process of manufacturing the second chip 3 will be described. Figures 27-30 A cross section of a laminated body in a manufacturing process of the second chip 3 is shown.

[0155] The process of manufacturing the second chip of the example embodiment up to the process of forming the protective layer 81 is the same as that of the first example embodiment.Figure 27 This indicates the next step. In this step, firstly, multiple masks 91C and multiple masks 92B are formed. The multiple masks 91C have shapes corresponding to the multiple third MR elements 50C. The multiple masks 92B at least cover portions of the laminated film 50P that later become the multiple second MR elements 50B. The planar shape (shape viewed from the Z direction) of each of the multiple masks 92B is larger than the planar shape of each of the multiple second MR elements 50B.

[0156] Multiple masks 91C each include a lower layer 911C disposed on the protective layer 81, and an upper layer 912C disposed on the lower layer 911C. Multiple masks 92B each include a lower layer 921B disposed on the protective layer 81, and an upper layer 922B disposed on the lower layer 921B. The upper layers 912C and 922B are formed of the same material as the upper layers 822B and 822C described in the first exemplary embodiment. The lower layers 911C and 921B are formed of the same material as the lower layers 821B and 821C described in the first exemplary embodiment.

[0157] exist Figure 27 In the process shown, a portion of the protective layer 81 is then etched by RIE using multiple masks 91C and multiple masks 92B.

[0158] Figure 28 This indicates the next step. In this step, firstly, multiple masks 91C, multiple masks 92B, and a protective layer 81 are used as etching masks, and a portion of the laminated film 50P is etched using IBE. In this etching, a portion of the laminated film 50P is etched such that a portion of the laminated film 50P becomes a plurality of third MR elements 50C. In this etching, specifically, the direction of the ion beam is tilted relative to the direction perpendicular to the upper surface 301a of the substrate 301, such that the first and second sides 50c, 50d of each of the plurality of third MR elements 50C are formed on the laminated film 50P. Next, the multiple masks 91C and multiple masks 92B are removed.

[0159] Figure 29 This indicates the next step. In this step, firstly, multiple masks 93B and multiple masks 94C are formed. The multiple masks 93B have shapes corresponding to the multiple second MR elements 50B. The multiple masks 94C cover the multiple third MR elements 50C. The planar shape of each of the multiple masks 94C is larger than the planar shape of each of the multiple third MR elements 50C.

[0160] Multiple masks 93B each include a lower layer 931B disposed on the protective layer 81, and an upper layer 932B disposed on the lower layer 931B. Multiple masks 94C each include a lower layer 941C disposed on the multiple third MR elements 50C, the metal film 61P, and the protective layer 81, and an upper layer 942C disposed on the lower layer 941C. The upper layers 932B and 942C are formed of the same material as the upper layers 822B and 822C described in the first exemplary embodiment. The lower layers 931B and 941C are formed of the same material as the lower layers 821B and 821C described in the first exemplary embodiment.

[0161] exist Figure 29 In the illustrated process, next, using multiple masks 93B and multiple masks 94C, another portion of the protective layer 81 is etched via RIE. Next, using multiple masks 93B, multiple masks 94C, and the protective layer 81 as etching masks, another portion of the laminated film 50P is etched via IBE. In this etching, another portion of the laminated film 50P is etched such that it becomes multiple second MR elements 50B. Specifically, in this etching, the direction of the ion beam is tilted relative to the direction perpendicular to the upper surface 301a of the substrate 301, such that the first and second sides 50c, 50d of each of the multiple second MR elements 50B are formed on the laminated film 50P. Next, as... Figure 30 As shown, multiple masks 93B and multiple masks 94C are removed.

[0162] Next, similarly to the first exemplary embodiment, an insulating layer 305 and a non-magnetic metal layer 83 are formed. Subsequent processes are the same as in the first exemplary embodiment.

[0163] In the manufacturing method of the magnetic sensor 1 in the exemplary embodiment, the difference from the first exemplary embodiment is that, instead of simultaneously forming multiple second MR elements 50B and multiple third MR elements 50C, multiple third MR elements 50C are formed first, followed by the formation of multiple second MR elements 50B. That is, the second etching step includes: etching a portion of the laminated film 50P to form multiple third MR elements 50C; and after forming multiple third MR elements 50C, etching another portion of the laminated film 50P to form multiple second MR elements 50B. Furthermore, in the exemplary embodiment, multiple second MR elements 50B may be formed first, followed by the formation of multiple third MR elements 50C.

[0164] Other structures, functions, and effects in the exemplary embodiments are the same as in the first exemplary embodiment.

[0165] [Third Exemplary Implementation]

[0166] Next, a third exemplary embodiment of the present technology will be described with reference to Figure 31 Figure 31 is a cross-sectional view that shows the MR element 50 in the exemplary embodiment. Figure 31 As described in the first exemplary embodiment Figure 12 and Figure 13 Also, indicates a cross section (YZ cross section) that intersects the MR element 50 disposed on an arbitrary inclined surface 310e.

[0167] In the exemplary embodiment, the first side surface 50c of the MR element 50 includes a first portion 50c1 and a second portion 50c2 between the first portion 50c1 and the support member 310 (refer to Figure 12 ). The second portion 50c2 is above the inclined surface 310e of the support member 310. The boundary between the first portion 50c1 and the second portion 50c2 can also be at the magnetization fixed layer 51 or the gap layer 52. In the example shown in Figure 31 , the above-described boundary is at the magnetization fixed layer 51.

[0168] The first portion 50c1 is at a position closer to the second side surface 50d than the first virtual plane PL1. In the exemplary embodiment, in particular, the second portion 50c2 is also at a position closer to the second side surface 50d than the first virtual plane PL1.

[0169] In the example shown in Figure 31 , the angle of the first portion 50c1 with respect to the second virtual plane PL2 is 0° or substantially 0°. That is, in the example shown in Figure 31 , the first portion 50c1 is perpendicular or substantially perpendicular to the portion of the inclined surface 310e opposite the first side surface 50c. Further, the first portion 50c1 can also be inclined with respect to the second virtual plane PL2. The angle of the first portion 50c1 with respect to the second virtual plane PL2 can also be in the range of 0° to 20°.

[0170] The angle of the second portion 50c2 with respect to the second virtual plane PL2 is greater than the angle of the first portion 50c1 with respect to the second virtual plane PL2.

[0171] In the exemplary embodiment, the second side surface 50d of the MR element 50 includes a third portion 50d1 and a fourth portion 50d2 between the third portion 50d1 and the support member 310 (refer to Figure 12 ). The fourth portion 50d2 is above the inclined surface 310e of the support member 310. The boundary between the third portion 50d1 and the fourth portion 50d2 can also be at the magnetization fixed layer 51 or the gap layer 52. In the example shown in Figure 31 , the above-described boundary is at the magnetization fixed layer 51. ​

[0172] The third portion 50d1 is positioned farther from the first side surface 50c than the third virtual plane PL3. In the example embodiment, in particular, the fourth portion 50d2 is also positioned farther from the first side surface 50c than the third virtual plane PL3.

[0173] In Figure 31 In the example shown, the third portion 50d1 is perpendicular or substantially perpendicular to the portion of the inclined surface 310e opposite the second side surface 50d. Further, the third portion 50d1 can also be inclined with respect to the fourth virtual plane PL4. The angle of the third portion 50d1 with respect to the fourth virtual plane PL4 can also be in the range of 0° to 20°. Figure 31 In the example shown, the third portion 50d1 is perpendicular or substantially perpendicular to the portion of the inclined surface 310e opposite the second side surface 50d. Further, the third portion 50d1 can also be inclined with respect to the fourth virtual plane PL4. The angle of the third portion 50d1 with respect to the fourth virtual plane PL4 can also be in the range of 0° to 20°.

[0174] The angle of the fourth portion 50d2 with respect to the fourth virtual plane PL4 is greater than the angle of the third portion 50d1 with respect to the fourth virtual plane PL4.

[0175] It is preferable that the first portion 50c1 and the third portion 50d1 be substantially parallel. That is, it is preferable that the angle of the first portion 50c1 with respect to the third portion 50d1 be small to some extent. It is preferable that the angle of the first portion 50c1 with respect to the third portion 50d1 be, for example, smaller than the angle of the third portion 50d1 with respect to the third virtual plane PL3.

[0176] The other structures, functions, and effects in the example embodiment are the same as in the first example embodiment.

[0177] [Fourth Example Embodiment]

[0178] Next, the fourth example embodiment of the present technology will be described with reference to Figure 32 The fourth example embodiment of the present technology will be described. Figure 32 is a cross-sectional view showing the MR element 50, the lower electrode 61, and the support member 310 in the example embodiment. Figure 32 The same as the Figure 12 Also, indicates a cross section (YZ cross section) intersecting the MR element 50 disposed on an arbitrary inclined surface 310e.

[0179] In the example embodiment, the first side surface 50c of the MR element 50 includes a first portion 50c11, a second portion 50c12 between the first portion 50c11 and the support member 310, and a third portion 50c13 connecting the first portion 50c11 and the second portion 50c12. The boundary between the first portion 50c11 and the third portion 50c13 can also be in the magnetization fixing layer 51 or the gap layer 52. The second portion 50c12 can also be above the flat surface 310d of the support member 310.

[0180] The configuration of the first portion 50c11 is the same as that of the first portion 50c1 in the third example embodiment. The other structures, functions, and effects in the example embodiment are the same as those in the first or third example embodiment.

[0181] [Fourth Example Embodiment]

[0182] Next, the fourth example embodiment of the present technology will be described with reference to Figure 33 and Figure 34 . Figure 33 is a perspective view showing a magnetic sensor of the example embodiment. Figure 34 is a cross-sectional view showing a part of a magnetic sensor of the example embodiment.

[0183] The magnetic sensor 101 of the example embodiment corresponds to integrating the first chip 2 and the second chip 3 in the first example embodiment. As shown in Figure 33 , the magnetic sensor 101 has a rectangular parallelepiped-shaped chip. The magnetic sensor 101 has an upper surface 101a and a lower surface on opposite sides of each other, and four side surfaces connecting the upper surface 101a and the lower surface. In addition, the magnetic sensor 101 has a plurality of electrode pads provided on the upper surface 101a.

[0184] The magnetic sensor 101 can also be mounted to the support body 4 shown in Figure 1 and Figure 2 of the first example embodiment. In this case, the magnetic sensor 101 is mounted to the reference plane 4a in a posture in which the lower surface of the magnetic sensor 101 opposes the reference plane 4a of the support body 4.

[0185] In addition, the magnetic sensor 101 includes the first to third detection circuits 10, 20, 30 shown in Figures 3-6 of the first example embodiment. The structures and operations of the first to third detection circuits 10, 20, 30 are the same as those in the first example embodiment. That is, the first detection circuit 10 includes a plurality of first MR elements 50A. The second detection circuit 20 includes a plurality of second MR elements 50B. The third detection circuit 30 includes a plurality of third MR elements 50C.

[0186] In addition, the magnetic sensor 101 includes the plurality of lower electrodes 61A, 61B, 61C and the plurality of upper electrodes 62A, 62B, 62C described in the first example embodiment. The connection method of each of the plurality of first MR elements 50A, the plurality of second MR elements 50B, and the plurality of third MR elements 50C is the same as that in the first example embodiment.

[0187] As shown in FIG. 10, the magnetic sensor 101 includes a substrate 401 having an upper surface 401a, and insulating layers 402, 403, 404, 405, 406, 407. The upper surface 401a of the substrate 401 is provided to be parallel to the XY plane. The Z direction is also one direction perpendicular to the upper surface 401a of the substrate 401. Figure 34 The insulating layers 402, 403, 404 are stacked on the substrate 401. In the example embodiment, the plurality of lower electrodes 61A, the plurality of lower electrodes 61B, and the plurality of lower electrodes 61C are disposed on the insulating layer 404. The insulating layer 405 is disposed around the plurality of first MR elements 50A on the plurality of lower electrodes 61A, around the plurality of second MR elements 50B on the plurality of lower electrodes 61B, and around the plurality of third MR elements 50C on the plurality of lower electrodes 61C.

[0188] The insulating layer 406 is disposed around the plurality of lower electrodes 61A, the plurality of lower electrodes 61B, the plurality of lower electrodes 61C, and the insulating layer 405 on the insulating layer 404. The plurality of upper electrodes 62A is disposed on the plurality of first MR elements 50A and the insulating layer 405. The plurality of upper electrodes 62B is disposed on the plurality of second MR elements 50B and the insulating layer 405. The plurality of upper electrodes 62C is disposed on the plurality of third MR elements 50C and the insulating layer 405. The insulating layer 407 is disposed on the plurality of upper electrodes 62A, the plurality of upper electrodes 62B, the plurality of upper electrodes 62C, and the insulating layers 405, 406.

[0189] The magnetic sensor 101 includes a support member 410 that supports the plurality of MR elements 50. The support member 410 is composed of the insulating layers 402, 403, 404. The support member 410 has a plurality of convex surfaces 410c that extend in a direction away from the upper surface 401a of the substrate 401 (the Z direction), and a flat surface 410d that exists around the plurality of convex surfaces 410c. The shape and disposition of the plurality of convex surfaces 410c are the same as those of the plurality of convex surfaces 310c in the first example embodiment.

[0190]

[0191] ​The plurality of convex surfaces 410c each include the first inclined surface 410a and the second inclined surface 410b. Thus, the support member 410 has a plurality of first inclined surfaces 410a and a plurality of second inclined surfaces 410b. The plurality of first inclined surfaces 410a have the same shape and arrangement as the plurality of first inclined surfaces 310a in the first exemplary embodiment. The plurality of second inclined surfaces 410b have the same shape and arrangement as the plurality of second inclined surfaces 310b in the first exemplary embodiment.

[0192] The magnetic sensor 101 includes a first portion in which the plurality of first MR elements 50A are arranged, and a second portion in which the plurality of second MR elements 50B and the plurality of third MR elements 50C are arranged. The plurality of convex surfaces 410c are actually formed by portions of the insulating layer 403 that belong to the second portion. That is, the portions of the insulating layer 403 described above include a plurality of protrusions that each protrude in the Z direction. The plurality of protrusions each extend in a direction parallel to the X direction, and have an upper surface having a shape corresponding to the convex surface 410c. In addition, the plurality of protrusions are arranged at a prescribed interval in a direction parallel to the Y direction.

[0193] The insulating layer 403 also includes flat portions. The thickness (dimension in the Z direction) of the flat portions is actually constant. The flat surface 410d is actually formed by the flat portions of the insulating layer 403 that belong to the first portion of the magnetic sensor 101, and the flat portions that exist around the plurality of protrusions in the second portion of the magnetic sensor 101.

[0194] The insulating layer 404 has a thickness (dimension in the Z direction) that is actually constant, and is formed along the upper surface of the insulating layer 403. Thus, the upper surface of the insulating layer 404 becomes the plurality of convex surfaces 410c and the flat surface 410d. Furthermore, the insulating layer 402 has a thickness (dimension in the Z direction) that is actually constant, and is formed along the lower surface of the insulating layer 403.

[0195] In the exemplary embodiment, the plurality of lower electrodes 61A are arranged on the flat surface 410d. The upper surface 401a of the substrate 401 is parallel to the XY plane, and the upper surface of each of the plurality of lower electrodes 61A is also parallel to the XY plane.

[0196] In addition, in the exemplary embodiment, the plurality of lower electrodes 61B are arranged on the plurality of first inclined surfaces 410a. The plurality of lower electrodes 61C are arranged on the plurality of second inclined surfaces 410b. The first inclined surfaces 410a and the second inclined surfaces 410b are each inclined with respect to the XY plane, which is the upper surface 401a of the substrate 401, and thus the upper surface of each of the plurality of lower electrodes 61B and the upper surface of each of the plurality of lower electrodes 61C are also inclined with respect to the XY plane.

[0197] The other structures, effects, and advantages in the exemplary embodiment are the same as in the first exemplary embodiment.

[0198] [Sixth Example Embodiment]

[0199] Next, a sixth example embodiment of the present technology will be described with reference to Figure 35 Figure 35 is a cross-sectional view showing a portion of the second chip in the example embodiment.

[0200] The magnetic sensor 1 of the example embodiment is provided with a second chip 103 instead of the second chip 3 in the first example embodiment. The outer shape of the second chip 103 is the same as that of the second chip 3. That is, the second chip 103 has an upper surface and a lower surface on opposite sides of each other, and four side surfaces connecting the upper surface and the lower surface. The second chip 103 is mounted on the reference plane 4a in a posture in which the lower surface of the second chip 103 faces the reference plane 4a (refer to Figure 1 and Figure 2 ).

[0201] The second chip 103 includes the second detection circuit 20 and the third detection circuit 30 shown in Figure 3 , Figure 5 and Figure 6 . The structures and operations of the second and third detection circuits 20, 30 are the same as those of the first example embodiment. That is, the second detection circuit 20 includes a plurality of second MR elements 50B. The third detection circuit 30 includes a plurality of third MR elements 50C.

[0202] In addition, the second chip 103 also includes the plurality of lower electrodes 61B, 61C and the plurality of upper electrodes 62B, 62C described in the first example embodiment. The connection methods of the plurality of second MR elements 50B and the plurality of third MR elements 50C are the same as those of the first example embodiment.

[0203] As shown in Figure 35 , the second chip 103 also includes a substrate 501 having an upper surface 501a, and insulating layers 502, 503, 504, 505, 506, 507. The upper surface 501a of the substrate 501 is provided to be parallel to the XY plane. The Z direction is also one direction perpendicular to the upper surface 501a of the substrate 501.

[0204] The insulating layers 502, 503, 504 are stacked on the substrate 501. In the example embodiment, the plurality of lower electrodes 61B and the plurality of lower electrodes 61C are arranged on the insulating layer 504. The insulating layer 505 is arranged around the plurality of second MR elements 50B on the plurality of lower electrodes 61B, and is arranged around the plurality of third MR elements 50C on the plurality of lower electrodes 61C.​

[0205] The insulating layer 506 is disposed on the insulating layer 504 so as to surround the plurality of lower electrodes 61B, the plurality of lower electrodes 61C, and the insulating layer 505. The plurality of upper electrodes 62B is disposed on the plurality of second MR elements 50B and the insulating layer 505. The plurality of upper electrodes 62C is disposed on the plurality of third MR elements 50C and the insulating layer 505. The insulating layer 507 is disposed on the plurality of upper electrodes 62B, the plurality of upper electrodes 62C, and the insulating layers 505, 506.

[0206] The second chip 103 includes a support member 510 that supports the plurality of MR elements 50. The support member 510 is constituted by the insulating layers 502, 503, 504. The support member 510 has a plurality of convex surfaces 510c each extending in a direction (Z direction) away from the upper surface 501a of the substrate 501, and a flat surface 510d present around the plurality of convex surfaces 510c. The entire shape of each of the plurality of convex surfaces 510c is a triangular shape. Figure 35 The triangular shape of the convex surface 510c shown in FIG. 6 is shifted in a direction parallel to the X direction to constitute a gable roof shape.

[0207] The plurality of convex surfaces 510c each includes a first inclined surface 510a and a second inclined surface 510b. Thus, the support member 510 has a plurality of first inclined surfaces 510a and a plurality of second inclined surfaces 510b. The plurality of first inclined surfaces 510a and the plurality of second inclined surfaces 510b are each a plane or a substantially plane. The plurality of first inclined surfaces 510a are each parallel or substantially parallel to the X direction and the U direction. The plurality of second inclined surfaces 510b are each parallel or substantially parallel to the X direction and the V direction. The angle each of the plurality of first inclined surfaces 510a and the plurality of second inclined surfaces 510b makes with the upper surface 501a of the substrate 501 is, for example, in the range of 10° to 50°.

[0208] The insulating layer 503 includes a plurality of protruding portions each protruding in the Z direction. The plurality of protruding portions each extends in a direction parallel to the X direction, and has an upper surface having a shape corresponding to the convex surface 510c. In addition, the plurality of protruding portions is arranged at a prescribed interval in a direction parallel to the Y direction.

[0209] The insulating layer 503 further includes a flat portion. The thickness (dimension in the Z direction) of the flat portion is virtually constant. The insulating layer 504 has a virtually constant thickness (dimension in the Z direction) formed along the upper surface of the insulating layer 503. Thus, the upper surface of the insulating layer 504 becomes the plurality of convex surfaces 510c and the flat surface 510d.

[0210] Further, the insulating layer 502 has a virtually constant thickness (dimension in the Z direction) formed along the lower surface of the insulating layer 503.

[0211] In the example embodiment, the plurality of lower electrodes 61B is arranged on the plurality of first inclined surfaces 510a. The plurality of lower electrodes 61C is arranged on the plurality of second inclined surfaces 510b. The first inclined surfaces 510a and the second inclined surfaces 510b are inclined with respect to the upper surface 501a of the substrate 501, that is, the XY plane, and thus the upper surfaces of the plurality of lower electrodes 61B and the upper surfaces of the plurality of lower electrodes 61C are also inclined with respect to the XY plane.

[0212] The other structures, actions, and effects in the example embodiment are the same as those in the first example embodiment.

[0213] Further, the present technology is not limited to the above-described example embodiments, and various changes can be made. For example, the shapes of the first side surface 50c and the second side surface 50d of the MR element 50 are not limited to the examples shown in the example embodiments, but are arbitrary, as long as the requirements of the claims are satisfied. For example, at least a part of each of the first side surface 50c and the second side surface 50d can be a curved surface. In addition, in the example embodiments, the first side surface 50c and the second side surface 50d are depicted so that the interval between the first side surface 50c and the second side surface 50d becomes larger as the distance from the inclined surface 310e increases. However, the interval between the first side surface 50c and the second side surface 50d can not be constant or substantially constant regardless of the distance from the inclined surface 310e, or can become smaller as the distance from the inclined surface 310e increases.

[0214] As described above, the magnetic sensor of one embodiment of the present technology includes a substrate having a reference plane, a support member arranged on the substrate and having an inclined surface inclined with respect to the reference plane, and a magnetoresistance effect element arranged on the inclined surface. The magnetoresistance effect element has a lower surface opposite the inclined surface, an upper surface on the opposite side of the lower surface, and a first side surface and a second side surface connecting the lower surface and the upper surface. The first side surface is located further forward than the second side surface in a first direction that is a direction along the inclined surface and that is closer to the reference plane. The second side surface is located further forward than the first side surface in a second direction that is a direction along the inclined surface and that is farther from the reference plane. At least a part of the first side surface is located closer to the second side surface than a first virtual plane that intersects the first corner existing at a position where the upper surface and the first side surface intersect and that is perpendicular to the reference plane.

[0215] In the magnetic sensor of one embodiment of the present technology, the angle formed by at least a part of the first side surface and a second virtual plane that intersects the first corner and that is perpendicular to the inclined surface can be in the range of 0° to 20°.

[0216] Further, in the magnetic sensor of one embodiment of the present technology, the first side surface can include a first portion and a second portion between the first portion and the support member. The angle of the second portion with respect to a second virtual plane intersecting the first corner portion and perpendicular to the inclined surface can be larger than the angle of the first portion with respect to the second virtual plane. The magnetoresistance effect element can include a free layer having a magnetization direction that can change in accordance with an external magnetic field, a magnetization fixed layer having a magnetization direction fixed, and a gap layer provided between the free layer and the magnetization fixed layer. The boundary between the first portion and the second portion can be at the magnetization fixed layer or the gap layer.

[0217] Further, in the magnetic sensor of one embodiment of the present technology, the magnetoresistance effect element can include a free layer having a magnetization direction that can change in accordance with an external magnetic field, a magnetization fixed layer having a magnetization direction fixed and interposed between the free layer and the inclined surface, and a gap layer provided between the free layer and the magnetization fixed layer. The magnetoresistance effect element can further include a cap layer composed of a non-magnetic metal and provided over the free layer.

[0218] Further, in the magnetic sensor of one embodiment of the present technology, the angle of at least a portion of the first side surface with respect to at least a portion of the second side surface can be smaller than the angle of at least a portion of the second side surface with respect to a third virtual plane intersecting a second corner portion existing at a position where the upper surface and the second side surface intersect and perpendicular to the reference plane.

[0219] Further, in the magnetic sensor of one embodiment of the present technology, the second side surface can include a third portion and a fourth portion between the third portion and the support member. The angle of the fourth portion with respect to a fourth virtual plane intersecting the second corner portion existing at a position where the upper surface and the second side surface intersect and perpendicular to the inclined surface can be larger than the angle of the third portion with respect to the fourth virtual plane.

[0220] Further, the magnetic sensor of one embodiment of the present technology can further include another magnetoresistance effect element. The inclined surface can include a first surface and a second surface facing different directions. The magnetoresistance effect element can be provided over the first surface. The other magnetoresistance effect element can be provided over the second surface.

[0221] Further, in the magnetic sensor of one embodiment of the present technology, the angle of a portion of the inclined surface opposite to the magnetoresistance effect element with respect to the reference plane can be in the range of 10° to 50°.

[0222] The manufacturing method of the magnetic sensor of one embodiment of the present technology includes a step of forming a support member over a substrate and a step of forming a magnetic resistance effect element. The step of forming the magnetic resistance effect element includes a step of forming a laminated film including a plurality of magnetic layers over an inclined surface of the support member, a step of forming a protective layer over the laminated film, a step of forming a mask, a first etching step of etching a part of the protective layer using the mask, and a second etching step of etching the laminated film using the mask and the etched protective layer so that the laminated film becomes the magnetic resistance effect element.

[0223] The manufacturing method of the magnetic sensor of one embodiment of the present technology can further include a step of forming an insulating layer after the second etching step and a step of removing the protective layer after the step of forming the insulating layer.

[0224] In the manufacturing method of the magnetic sensor of one embodiment of the present technology, the magnetic sensor can further include another magnetic resistance effect element. The inclined surface can include a first surface and a second surface facing different directions. The magnetic resistance effect element can be provided over the first surface. The other magnetic resistance effect element can be provided over the second surface. The magnetic resistance effect element and the other magnetic resistance effect element can be formed at the same time in the second etching step. Alternatively, the second etching step can include a step of etching a part of the laminated film to form the magnetic resistance effect element and a step of etching another part of the laminated film to form the other magnetic resistance effect element after the step of forming the magnetic resistance effect element.

[0225] In the manufacturing method of the magnetic sensor of one embodiment of the present technology, the protective layer can be formed of carbon or aluminum oxide.

[0226] As described above, various modes and modifications of the present technology can be implemented. Thus, the present technology can be implemented in modes other than the above-described example embodiments within the scope equivalent to the claims.

Claims

1. A magnetic sensor, characterized in that, have: A substrate having a reference plane; A support member, disposed on the substrate, has an inclined surface tilted relative to the reference plane; and A magnetoresistive element is disposed on the inclined surface. The magnetoresistive element has: a lower surface opposite to the inclined surface, an upper surface opposite to the lower surface, and a first side surface and a second side surface connecting the lower surface and the upper surface. The first side is located further forward than the second side, in a first direction that is along the inclined surface and close to the reference plane. The second side is located further forward than the first side in a second direction that is along the inclined surface and away from the reference plane. At least a portion of the first side is located closer to the second side than the first virtual plane, and the first virtual plane intersects with a first corner located at the intersection of the upper surface and the first side and is perpendicular to the reference plane.

2. The magnetic sensor according to claim 1, characterized in that, The angle between at least a portion of the first side and the second virtual plane is in the range of 0° to 20°, and the second virtual plane intersects the first corner and is perpendicular to the inclined surface.

3. The magnetic sensor according to claim 1, characterized in that, The first side comprises: a first portion, and a second portion located between the first portion and the support member. The angle between the second part and the second virtual plane is greater than the angle between the first part and the second virtual plane. The second virtual plane intersects the first corner and is perpendicular to the inclined plane.

4. The magnetic sensor according to claim 3, characterized in that, The magnetoresistive element comprises: a free layer having a magnetized orientation that can change according to an external magnetic field; a magnetized fixed layer having a magnetized orientation that is fixed; and a gap layer disposed between the free layer and the magnetized fixed layer. The boundary between the first part and the second part is located in the magnetized fixing layer or the gap layer.

5. The magnetic sensor according to claim 1, characterized in that, The magnetoresistive element comprises: a free layer having a magnetized orientation that can change according to an external magnetic field; a magnetized fixed layer having a fixed orientation and disposed between the free layer and the inclined surface; and a gap layer disposed between the free layer and the magnetized fixed layer.

6. The magnetic sensor according to claim 5, characterized in that, The magnetoresistive element further includes a capping layer made of a non-magnetic metal disposed on the free layer.

7. The magnetic sensor according to claim 1, characterized in that, The angle between at least a portion of the first side and at least a portion of the second side is less than the angle between at least a portion of the second side and the third virtual plane, the third virtual plane intersecting with a second corner located at the intersection of the upper surface and the second side and perpendicular to the reference plane.

8. The magnetic sensor according to claim 1, characterized in that, The second side comprises: a third portion, and a fourth portion located between the third portion and the support member. The angle between the fourth part and the fourth virtual plane is greater than the angle between the third part and the fourth virtual plane. The fourth virtual plane intersects with the second corner located at the intersection of the upper surface and the second side surface and is perpendicular to the inclined surface.

9. The magnetic sensor according to claim 1, characterized in that, It also features: another magnetoresistive element, The inclined surface includes a first surface and a second surface facing different directions. The magnetoresistive element is disposed on the first surface. The other magnetoresistive element is disposed on the second surface.

10. The magnetic sensor according to claim 1, characterized in that, The angle between the portion of the inclined plane opposite to the magnetoresistive element and the reference plane is in the range of 10° to 50°.

11. A method for manufacturing a magnetic sensor, characterized in that, The method for manufacturing the magnetic sensor according to claim 1 have: The process of forming the support member on the substrate; and The process of forming the magnetoresistive element, The process of forming the magnetoresistive element includes: The process of forming a laminated film comprising multiple magnetic layers on the inclined surface of the support member; The process of forming a protective layer on the laminated film; The process of forming a mask; A first etching process in which a portion of the protective layer is etched using the mask; as well as A second etching process is performed on the laminated film using the mask and the etched protective layer, such that the laminated film becomes the magnetoresistive effect element.

12. The method for manufacturing a magnetic sensor according to claim 11, characterized in that, It also has: The process of forming an insulating layer after the second etching process; and The process of removing the protective layer is performed after the process of forming the insulating layer.

13. The method for manufacturing a magnetic sensor according to claim 11, characterized in that, The magnetic sensor also includes another magnetoresistive element. The inclined surface includes a first surface and a second surface facing different directions. The magnetoresistive element is disposed on the first surface. The other magnetoresistive element is disposed on the second surface. The magnetoresistive element and the other magnetoresistive element are formed simultaneously in the second etching process.

14. The method for manufacturing a magnetic sensor according to claim 11, characterized in that, The magnetic sensor also includes another magnetoresistive element. The inclined surface includes a first surface and a second surface facing different directions. The magnetoresistive element is disposed on the first surface. The other magnetoresistive element is disposed on the second surface. The second etching process includes: The process of etching a portion of the laminated film to form the magnetoresistive element; and After the process of forming the magnetoresistive effect element, another portion of the laminated film is etched to form the other magnetoresistive effect element.

15. The method for manufacturing a magnetic sensor according to claim 11, characterized in that, The protective layer is composed of carbon or aluminum oxide.

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