Substrate support carrier with improved bonding layer protection

Abstract

A substrate support susceptor includes an electrostatic chuck, a cooling base, an airflow channel, a porous plug, and a sealing member. The electrostatic chuck includes a body having a cavity. The cooling base is coupled to the electrostatic chuck via a bonding layer. An airflow channel is formed between a top surface of the electrostatic chuck and a bottom surface of the cooling base. The airflow channel further includes a cavity. A porous plug is positioned within the cavity to control airflow through the airflow channel. The sealing member is positioned adjacent the porous plug, and the sealing member is configured to form one or more of: a radial seal between the porous plug and the cavity, and an axial seal between the porous plug and the cooling base.

Description

This application is a divisional application of the invention patent application filed on April 22, 2020, with application number "202080035413.7" and invention title "Substrate Support Carrier with Improved Bonding Layer Protection". Technical Field

[0001] The embodiments of this disclosure generally relate to a substrate support base with a protected bonding layer for a substrate process chamber. Background Technology

[0002] Substrate support bases are widely used to support substrates within semiconductor processing systems during substrate handling. A substrate support base typically includes an electrostatic chuck bonded to a cooling base with a bond layer. The electrostatic chuck typically includes one or more embedded electrodes that are driven to a potential during handling to hold the substrate against the chuck. The cooling base typically includes one or more cooling channels and helps control the substrate temperature during handling. Additionally, the electrostatic chuck may include one or more airflow channels that allow gas to flow between the chuck and the substrate to further assist in controlling the substrate temperature during processing. Gas fills the area between the chuck and the substrate, thereby increasing the heat transfer rate between the substrate and the substrate support. However, when the substrate is not present, the airflow channels also provide a path for process gases, allowing process gases to flow into the area where the bond layer is located between the chuck and the cooling base. Therefore, the bond layer is eroded by the process gases.

[0003] Etching of the bonding layer is problematic for at least two reasons. First, the material eroded from the bonding layer is a process contaminant that can introduce defects and reduce product yield. Second, when the bonding layer is eroded, the localized rate of heat transfer between the electrostatic chuck and the cooling base changes, creating unwanted temperature inhomogeneities on the substrate and leading to process drift.

[0004] Therefore, an improved substrate support base is needed. Summary of the Invention

[0005] In one example, the electrostatic chuck has a body including a top surface, a cavity, an airflow channel, and a porous plug. The airflow channel is formed between the top surface and the cavity. The porous plug is positioned within the cavity. A sealing member is positioned adjacent to the porous plug and is configured to form one or more of the following: a radial seal between the porous plug and the cavity and an axial seal between the porous plug and a cooling base, which engages with the electrostatic chuck.

[0006] In one example, a substrate support base is provided, the substrate support base including an electrostatic chuck, a cooling base, an airflow channel, a porous plug, and a sealing member. The electrostatic chuck has a body including a cavity. The cooling base is coupled to the electrostatic chuck via a bonding layer. An airflow channel is formed between a top surface of the electrostatic chuck and a bottom surface of the cooling base. The airflow channel further includes a cavity. The porous plug is positioned within the cavity. The sealing member is positioned adjacent to the porous plug, and the sealing member is configured to form one or more of the following: a radial seal between the porous plug and the cavity and an axial seal between the porous plug and the cooling base.

[0007] In one example, the process chamber includes a chamber body, an electrostatic chuck, a cooling base, an airflow channel, a porous plug, and a sealing member. The chamber body has a processing space. The electrostatic chuck is disposed in the processing space and has a top surface configured to support a substrate during processing. The electrostatic chuck further includes a bottom surface and a cavity. The cooling base is coupled to the electrostatic chuck via a bonding layer. An airflow channel is formed between the top surface of the electrostatic chuck and the bottom surface of the cooling base. Furthermore, the airflow channel extends through the cavity. The porous plug is positioned within the cavity. The sealing member is positioned adjacent to the porous plug and is configured to form one or more of the following: a radial seal between the porous plug and the cavity and an axial seal between the porous plug and the cooling base. Attached Figure Description

[0008] The features of this disclosure have been briefly summarized above and discussed in more detail below, which can be understood by referring to the embodiments of this disclosure shown in the accompanying drawings. However, it should be noted that the drawings depict only embodiments of this disclosure and should therefore not be considered as limiting its scope, as other equally effective embodiments are permissible.

[0009] Figure 1 A schematic diagram depicts a process chamber having a substrate support base according to one or more embodiments.

[0010] Figure 2 A partial cross-sectional view of a substrate support base according to one or more embodiments is depicted.

[0011] Figure 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 , Figure 8 and Figure 9 This is a partial cross-sectional view of a substrate support base according to one or more embodiments.

[0012] For ease of understanding, the same reference numerals have been used to represent common elements in the accompanying drawings, where possible. Detailed Implementation

[0013] The systems and methods discussed in this disclosure employ a substrate support base having a cooling base and an electrostatic chuck, the cooling base and the electrostatic chuck being joined together via a bonding layer. A porous plug is positioned within an airflow channel formed in the cooling base and the electrostatic chuck. The confinement of the porous plug protects the bonding layer from the process gases used during substrate processing. Advantageously, the following embodiments discuss an improved technique for securing the porous plug within the airflow channel to prevent bonding layer degradation by utilizing a radial seal, which substantially prevents gas flow around the porous plug.

[0014] Figure 1 A schematic diagram of a process chamber 100 according to one or more embodiments is depicted. The process chamber 100 includes at least one induction coil antenna segment 112A and a conductive coil antenna segment 112B, both positioned outside a dielectric top plate 120. The induction coil antenna segment 112A and the conductive coil antenna segment 112B are respectively coupled to a radio frequency (RF) source 118 that generates RF signals. The RF source 118 is coupled to the induction coil antenna segment 112A and the conductive coil antenna segment 112B via a matching network 119. The process chamber 100 also includes a substrate support base 116 coupled to an RF source 122 that generates RF signals. The RF source 122 is coupled to the substrate support base 116 via a matching network 124. The process chamber 100 also includes a chamber wall 130, which is conductive and connected to an electrical ground 134.

[0015] The controller 140 includes a central processing unit (CPU) 144, a memory 142, and support circuitry 146. The controller 140 is coupled to various components of the process chamber 100 to facilitate control of the substrate processing process.

[0016] In operation, a semiconductor substrate 114 is placed on a substrate support base 116, and gaseous components are supplied from a gas panel 138 through an inlet port 126 to the process chamber 100 to form a gaseous mixture in the processing space 150 of the process chamber 100. RF power from RF sources 118 and 122 is applied to the induction coil antenna segment 112A, the conductive coil antenna segment 112B, and the substrate support base 116, respectively, igniting the gaseous mixture in the processing space 150 into plasma. Furthermore, chemically reacted ions are released from the plasma and strike the substrate, thereby removing exposed material from the substrate surface.

[0017] The pressure inside the process chamber 100 is controlled using a throttle valve 127 located between the process chamber 100 and the vacuum pump 136. The temperature at the surface of the chamber wall 130 is controlled using a liquid-containing conduit (not shown) located in the chamber wall 130 of the process chamber 100.

[0018] The substrate support base 116 includes an electrostatic chuck 102 disposed on the cooling base 104. The substrate support base 116 is typically supported above the bottom of the process chamber 100 by a shaft 107 coupled to the cooling base 104. The substrate support base 116 is secured to the shaft 107 such that the substrate support base 116 can be removed from, refurbished, and retightened from the shaft 107. The shaft 107 is sealed to the cooling base 104 to isolate various conduits and wires disposed therein from the process environment within the process chamber 100. Alternatively, the electrostatic chuck 102 and the cooling base 104 may be disposed on an insulating plate attached to a ground plane or chassis. Furthermore, the ground plane may be attached to one or more chamber walls 130.

[0019] The temperature of the semiconductor substrate 114 is controlled by stabilizing the temperature of the electrostatic chuck 102. For example, a back-side gas (such as helium or other gas) can be supplied to a gas chamber defined between the semiconductor substrate 114 and the support surface 106 of the electrostatic chuck 102 via a gas source 148. The back-side gas is used to facilitate heat transfer between the semiconductor substrate 114 and the substrate support base 116 to control the temperature of the substrate 114 during processing. The electrostatic chuck 102 may include one or more heaters. For example, the heater may be an electric heater or the like.

[0020] Figure 2 Depicting according to one or more embodiments Figure 1 The diagram shows a portion of the substrate support base 116 in a vertical cross-sectional view. As discussed above, the substrate support base 116 has a cooling base 104 fixed to the electrostatic chuck 102. Figure 2 In the example shown, the cooling base 104 is fixed to the electrostatic chuck 102 via the bonding layer 204.

[0021] The bonding layer 204 includes one or more materials, such as acrylic or silicone-based adhesives, epoxy resins, neoprene-based adhesives, optically transparent adhesives (such as transparent acrylic adhesives) or other suitable adhesive materials.

[0022] The cooling base 104 is typically made of a metallic material, such as stainless steel, aluminum, aluminum alloy, and other suitable materials. Furthermore, the cooling base 104 includes one or more cooling channels 212 disposed therein, which circulate heat transfer fluid to maintain thermal control over the substrate support base 116 and the substrate 114.

[0023] The electrostatic chuck 102 is typically circular in shape, but may alternatively include other geometries to accommodate non-circular substrates. For example, when used to process display glass (such as glass for flat panel displays), the electrostatic chuck 102 may include a square or rectangular substrate. The electrostatic chuck 102 typically includes a body 206, which includes one or more electrodes 208. The electrodes 208 are composed of a conductive material (such as copper, graphite, tungsten, molybdenum, etc.). Various embodiments of the electrode structure include, but are not limited to, a pair of coplanar D-shaped electrodes, coplanar interdigital electrodes, multiple coaxial ring electrodes, singular, circular electrodes, or other structures. The electrodes 208 are coupled to a power supply 125 via a feedthrough 209 disposed in a substrate support base 116. The power supply 125 may drive the electrodes 208 with a positive or negative voltage. For example, the power supply 125 may drive the electrodes 208 with a voltage of approximately -1000 volts or approximately 2500 volts. Alternatively, other negative voltages or other positive voltages may be utilized.

[0024] The body 206 of the electrostatic chuck 102 may be made of a ceramic material. For example, the body 206 of the electrostatic chuck 102 may be made of a low resistivity ceramic material (i.e., having a resistivity of approximately 1 x E). 9 To approximately 1xE 11 The material is made of a resistivity between 1 ohm and 1 cm. Examples of low resistivity materials include doped ceramics, such as alumina doped with titanium oxide or chromium oxide, doped alumina, doped boron nitride, etc. Other materials with comparable resistivity, such as aluminum nitride, can also be used. When power is applied to electrode 208, such a ceramic material with relatively low resistivity typically promotes the Johnsen-Rahbek attraction between the substrate and the electrostatic chuck 102. Alternatively, a body 206 comprising a ceramic material with a resistivity equal to or greater than 1 ohm can also be used. 11 ohms-cm. Furthermore, the body 206 of the electrostatic chuck 102 can be made of aluminum oxide.

[0025] The support surface 106 of the body 206 includes a plurality of mesa 216 disposed inwardly from a sealing ring (not shown), and the plurality of mesa 216 are formed on the support surface 106. The sealing ring is made of the same material as the body 206, but may also be made of other dielectric materials. The mesa 216 is typically formed of one or more layers of electrically insulating material with a dielectric constant in the range of about 5 to about 10. Examples of such insulating materials include, but are not limited to, silicon nitride, silicon dioxide, aluminum oxide, tantalum pentoxide, polyimide, etc. Alternatively, the mesa 216 may be formed of the same material as the body 206 and then coated with a high resistivity dielectric film.

[0026] During operation, the electric field generated by the driving electrode 208 holds the substrate 114 to the support surface 106 by a clamping force. The clamping force is maximum at each mesa 216. Furthermore, the position and / or size of the mesa 216 can be adjusted to achieve a uniform charge distribution across the entire back side of the substrate.

[0027] A back-side gas (e.g., helium, nitrogen, or argon) is introduced into the gas chamber 280 via a gas source 148 to help control the temperature across the substrate 114 when the substrate 114 is held by the electrostatic chuck 102. The gas chamber 280 is defined between the support surface 106 of the electrostatic chuck 102 and the substrate 114. Furthermore, the back-side gas within the gas chamber 280 provides a heat transfer medium between the electrostatic chuck 102 and the substrate 114. The back-side gas is typically supplied to the gas chamber 280 via one or more airflow channels 270 formed through the body 206 and the cooling base 104. Each airflow channel 270 terminates at a corresponding opening 210 formed through the support surface 106 of the body 206.

[0028] Airflow channel 270 extends from the support surface 106 of the body 206 to the bottom surface 284 of the cooling base 104. Airflow channel 270 includes an opening 210 in the electrostatic chuck 102, an opening 209 in the cooling base 104, and a cavity 211 formed in the body 206 of the electrostatic chuck 102. Cavity 211 may have a cross-section (such as diameter) larger than the cross-section of at least one of the openings 210 and 209. The diameter of opening 209 may be greater than, less than, or equal to the diameter of opening 210. Furthermore, although in Figure 2 A single airflow channel 270 is shown, but the substrate support base 116 may include multiple airflow channels.

[0029] Airflow channel 270 is coupled to gas source 148. Alternatively, each airflow channel 270 can be coupled to gas source 148 via a single port 272. Or, each airflow channel 270 can be individually coupled to gas source 148 via a separate port 272.

[0030] A porous plug 244 is typically disposed within the airflow channel 270 (within cavity 211), thus forming part of the airflow channel 270. The porous plug 244 provides a path for pressurized gas to flow between two surfaces at different potentials. For example, the porous plug 244 provides a path for pressurized gas to flow between the first and second surfaces of the electrostatic chuck 102 and between the first surface of the electrostatic chuck 102 and the first surface of the cooling base 104. Furthermore, the porous plug 244 includes multiple small passageways, which reduces the likelihood of plasma ignition in the gap 204A between the electrostatic chuck 102 and the cooling base 104 compared to a design without the porous plug 244. The porous plug 244 is typically made of a ceramic material (such as alumina or aluminum nitride). Alternatively, the porous plug 244 may be made of other porous materials. Furthermore, the porous plug 244 may have a porosity of about 30% to about 80%. Alternatively, the porous plug may have a porosity of less than 30% or greater than 80%. Additionally, the porous plug 244 is adjacent to the step 250, and the step 250 defines the top of the cavity 211.

[0031] The porous plug 244 has a T-shape. Compared to porous plugs of other shapes, the T-shaped porous plug provides increased airflow and is easier to install into the cavity 211. The porous plug 244 may include a head 251 and a shaft 252. The head 251 has a diameter 253, and the shaft 252 has a diameter 254. Furthermore, the diameter 253 is larger than the diameter 254. Additionally, the head includes a bottom surface 255 that meets with the shaft 252. The head 251 further includes a surface 256 facing a sidewall 205 of the cavity 211. Furthermore, the shaft 252 includes a surface 257 facing the sidewall 205 of the cavity 211. In various embodiments, various techniques such as press-fit, sliding fit, clearance fit, pinning, and engagement can be used to position the porous plug 244 within the cavity 211. For example, the porous plug 244 can be positioned within the cavity such that the surface 256 of the head 251 contacts the sidewall 205, or such that there is a gap between the surface 256 of the head 251 and the sidewall 205.

[0032] A sealing member 245 is disposed adjacent to a porous plug 244. The sealing member 245 forms a seal between the surface 257 of the porous plug 244 and the sidewall 205 of the cavity 211. The sealing member 245 may form at least one of the following: a radial seal between the porous plug 244 and the cavity 211 and an axial seal between the porous plug 244 and the cooling base 104. Furthermore, the sealing member 245 may secure the porous plug 244 within the cavity 211. For example, the sealing member 245 may be coupled to at least one of the porous plug 244 and the sidewall 205 of the cavity 211 using various techniques (such as press-fit, pinning, and joining). The sealing member 245 may mechanically secure the porous plug 244 to the sidewall 205 of the cavity 211.

[0033] The sealing member 245 may be made of an elastic polymeric material (e.g., an elastomer). Alternatively, the sealing member 245 may be composed of one or more of a fluorinated elastomer material (e.g., FKM), a perfluorinated elastomer material (e.g., FFKM), and a high-purity ceramic. The high-purity ceramic may have a purity greater than 99% and may be a ceramic paste or a solid suspended in solution. Additionally, the sealing member 245 may be made of a material resistant to process gases. For example, the corrosion-resistant material will not corrode in the presence of process gases. Or, the material of the sealing member 245 may be selected such that the material does not penetrate the porous plug 244. The sealing member 245 may be an O-ring, a cylindrical gasket, or other annular seal. Alternatively, the sealing member 245 may be formed of a material applied as a liquid, paste, and / or gel and whose state is changed to a substantially solid or gel form. Furthermore, the sealing member 245 may be made of a substantially non-sticky material.

[0034] The bonding layer 204 secures the main body 206 to the cooling base 104. Furthermore, a gap 204A is formed in the bonding layer 204 and is part of the airflow channel 270. Since the materials or materials typically constituting the bonding layer 204 are susceptible to erosion in the presence of process gases used during substrate processing, various methods for protecting the bonding layer 204 from the effects of process gases have been explored. Advantageously, by employing a sealing member (e.g., sealing member 245) with high resistance to process gases, process gases are prevented from passing through the porous plug 244. Therefore, the service life of the bonding layer 204 is increased. Furthermore, the service life of the substrate support base 116 is also increased.

[0035] Figure 3 This is a schematic cross-sectional view of a portion 201 of a substrate support base 116 according to one or more embodiments. As described above, the porous plug 244 has a head 251 and a shaft 252, forming a T-shape. The T-shaped porous plug provides better airflow than other shaped porous plugs and can be more easily installed into the cavity 211 than other shaped porous plugs. Furthermore, the porous plug 244 prevents back-side gas from flowing into the gap between the electrostatic chuck 102 and the cooling base 104, and prevents adverse effects (e.g., erosion) on the bonding layer 204.

[0036] The porous plug 244 may extend from the first end 302 of the cavity 211 to the second end 304 of the cavity 211. For example, the surface 306 of the porous plug 244 may contact the surface 309 of the cavity, and the surface 308 of the porous plug 244 may be coplanar with the surface 307 of the electrostatic chuck 102, such that the surface 308 extends into the gap 305 between the electrostatic chuck 102 and the cooling base 104. Alternatively, the surface 308 may extend into the gap 305 between the electrostatic chuck 102 and the cooling base 104. Furthermore, the surface 308 may be between the surface 309 and the surface 307.

[0037] As mentioned above Figure 2 The diameter 253 of the porous plug 244 is larger than the diameter 332 of the opening 210. Furthermore, the porous plug 244 and the opening 210 are concentric. Or even, the porous plug 244 and the opening 209 are concentric.

[0038] Cavity 211 includes a chamfered edge 310, which is formed where the sidewall 205 intersects with the bottom surface 307 of the electrostatic chuck 102. Furthermore, the porous plug 244 may have a chamfered edge, where surface 306 intersects with surface 256 at the chamfered edge. The chamfered edge 310 of cavity 211 and the chamfered edge 320 of porous plug 244 facilitate insertion of porous plug 244 into cavity 211. Additionally, the chamfered edge 310 reduces potential damage to sealing member 245 when it is inserted into the cavity surrounding porous plug 244 or when sealing member 245 expands during substrate processing.

[0039] A sealing member 245 is adjacent to a porous plug 244. The sealing member 245 forms a radial seal between the porous plug 244 and the cavity 211. For example, the sealing member 245 may contact the surface 257 of the porous plug 244 and the sidewall 205 of the cavity 211, thereby preventing process gas from flowing along the side of the porous plug 244. Furthermore, the sealing member 245 may secure the porous plug 244 within the cavity 211. For example, the sealing member 245 may apply force to the sidewall 205 of the cavity 211 and the surface 257 of the porous plug 244, thereby holding the porous plug 244 within the cavity 211. Additionally, the sealing member 245 includes surfaces 356 and 357. One or more of surfaces 356 and 357 may have a substantially curved shape. The substantially curved shape may be convex or concave. Furthermore, one or more of surfaces 356 and 357 may have a substantially flat shape.

[0040] The sealing member 245 may be completely residing within the cavity 211, or the sealing member 245 may extend at least partially into the gap 305 between the electrostatic chuck 102 and the cooling base 104. Furthermore, the dimensions of the sealing member 245 may be adjusted such that the sealing member 245 does not exceed the opening of the cavity 211 defined between the surface 255 of the porous plug 244, the surface 257 of the shaft 252, the surface 307 of the electrostatic chuck 102, and the sidewall 205 of the cavity 211. Alternatively, the bonding layer 204 may extend into the gap 305, such that the bonding layer 204 at least partially contacts the sealing member 245.

[0041] Figure 4 This is a schematic cross-sectional view of portion 201 of a substrate support base 116 having different sealing members 445. Figure 3 Compared to the sealing component 245, Figure 4 The sealing member 445 forms a radial seal between the surface 257 of the shaft 252 and the sidewall 205 of the cavity 211, and an axial seal between the surface 255 of the porous plug 244 and the surface 404 of the cooling base 104. For example, the sealing member 245 may contact the surfaces 257 and 255 of the porous plug 244, the sidewall 205 of the cavity 211, and the surface 404 of the cooling base 104. The sealing member 445 is positioned adjacent to the porous plug 244. For example, the sealing member 445 is positioned between the porous plug 244 and the sidewall of the cavity 211. In addition, the sealing member is positioned between the porous plug 244 and the cooling base 104. Furthermore, the sealing member 445 may be formed as a sealing member similar to the sealing member 245. For example, the sealing member 445 may be an O-ring, a cylindrical gasket, or other annular seal. Furthermore, the sealing member 245 may be formed of a material that is resistant to corrosion in the presence of the process gas used during the substrate processing with respect to the sealing member 245 as described above. Additionally, the sealing member 445 includes surfaces 456 and 457. One or more of surfaces 456 and 457 may have a substantially curved shape. The substantially curved shape may be convex or concave. Furthermore, one or more of surfaces 456 and 457 may have a substantially flat shape. Additionally, the bonding layer 204 may at least partially contact the sealing member 445.

[0042] Figure 5 This is a schematic cross-section of portion 201 of the substrate support base 116, which has different sealing members 545 and porous plugs 544. The porous plugs 544 are configured similarly to Figure 2 and Figure 3The porous plug 244, however, is not T-shaped but cylindrical. A sealing member 545 is positioned adjacent to the porous plug 544. For example, the sealing member 545 is positioned between the porous plug 544 and the sidewall of the cavity 211. Furthermore, the sealing member may be positioned between the surface 309 of the cavity 211 and the cooling base 104. The porous plug 544 has a diameter 530, a top surface 506, a bottom surface 508, and a surface 550. The top surface 506 contacts the surface 309 of the cavity 211. Furthermore, the surface 508 may be recessed into the cavity 211, coplanar with the surface 307 of the electrostatic chuck 102, or extend into the gap 305 formed between the surface 307 of the electrostatic chuck and the surface 404 of the cooling base 104. The diameter 530 of the porous plug 544 is larger than the diameter 532 of the opening 210.

[0043] The sealing member 545 may be formed as a sealing member similar to the sealing member 245. For example, the sealing member 545 may be an O-ring, a cylindrical gasket, or other annular seal. Furthermore, the sealing member 545 may be formed of a material resistant to corrosion in the presence of the process gas used during the substrate processing described above with respect to the sealing member 245. The sealing member 545 forms a radial seal between the surface 550 of the porous plug 544 and the sidewall 205 of the cavity 211. For example, the sealing member 545 contacts the surface 550 of the porous plug 544 and the sidewall 205 of the cavity 211, such as... Figure 4 The sealing member 445 is shown. Additionally, the sealing member 545 can form an axial seal between the surface 309 of the cavity 211 and the surface 404 of the cooling base 104. For example, the sealing member 545 can contact the surface 309 of the cavity 211 and the surface 404 of the cooling base 104. The sealing member 545 includes surfaces 556 and 557. One or more of surfaces 556 and 557 may have a substantially curved shape. The substantially curved shape can be convex or concave. One or more of surfaces 556 and 557 may have a substantially flat shape. Furthermore, the bonding layer 204 may protrude into the gap 305 such that the bonding layer 204 at least partially contacts the sealing member 545.

[0044] Figure 6 This is a schematic cross-sectional view of a portion 201 of a substrate support base 116 having a different sealing member 645 according to one or more embodiments. Figure 3 Compared to the sealing component 245, Figure 6The sealing member 645 is formed of a material that changes state to a substantially solid or gel form when applied in liquid, paste, or gel form. For example, the sealing member 645 can be formed of a fluoroelastomer, a perfluoroelastomer, or a high-purity ceramic encapsulation material, which can flow or otherwise be disposed in the cavity 211 surrounding the porous plug 244, changing state to a more solid and substantially immobile form. The sealing member 645 is disposed adjacent to the porous plug 244 such that the material is disposed between the surfaces 257 and 255 of the porous plug 244 and the sidewalls 205 of the cavity 211. Furthermore, the material can be exposed to a predetermined pressure, temperature, and / or energy source to change the material to a substantially immobile form and produce the sealing member 645. The temperature used to change the material to a substantially immobile form can be less than about 300 degrees Celsius. Alternatively, other temperatures can be utilized. Additionally, the sealing member 645 secures the porous plug 244 within the cavity 211, forming a radial seal between the surface 257 of the porous plug 244 and the sidewall 205 of the cavity 211. Furthermore, the bonding layer 204 may protrude into the gap 305 such that the bonding layer 204 at least partially contacts the sealing member 645.

[0045] Figure 7 This is a schematic cross-sectional view of a portion 201 of a substrate support base 116 having a different sealing member 745 according to one or more embodiments. Figure 5 Compared to the sealing component 545, Figure 7 The sealing member 745 is formed of a material that changes state to a substantially solid or gel form when applied in liquid, paste, or gel form. For example, the sealing member 745 may be formed of a fluorinated elastomer, a perfluoroelastomer, or a high-purity ceramic encapsulation material, which can flow or otherwise be disposed in the cavity 211 surrounding the porous plug 544, changing its state to a more solid and substantially stationary form. The material may be disposed between the surface 550 of the porous plug 544 and the sidewalls 205 and the surface 309 of the cavity 211. Furthermore, the material is exposed to a predetermined pressure, temperature, and / or energy source to change the material to a substantially stationary form and create the sealing member 745. Additionally, the sealing member 745 contacts the surface 550 of the porous plug 544 and the surface 309 and sidewalls 205 of the cavity 211, thereby securing the porous plug 544 in the cavity 211. Furthermore, the sealing member 745 forms a radial seal between the surface 550 of the porous plug 544 and the sidewalls 205 of the cavity 211. Furthermore, the bonding layer 204 may protrude into the gap 305 such that the bonding layer 204 at least partially contacts the sealing member 745.

[0046] Figure 8 Is with Figure 2A schematic cross-section of portion 201 of a substrate support base 116 with different porous plugs 844 and different sealing members 845, compared to embodiments. For example, with Figure 2 Compared to the porous plug 244, the porous plug 844 includes a cylindrical shape. Furthermore, compared to... Figure 5 Compared to the porous plug 544, the diameter 830 of the porous plug 844 is larger than that of the porous plug 544, allowing the porous plug 844 to fill more cavities 211 than the porous plug 544. The diameter of the porous plug 844 is larger than the diameter 832 of the opening 210. The top surface 806 contacts the surface 309 of the cavity 211. Surface 808 may be coplanar with the surface 307 of the electrostatic chuck 102. The porous plug 844 may have a chamfered edge along surface 806, similar to... Figure 3 The chamfered edge of the porous plug 244.

[0047] The sealing member 845 may be formed as a sealing member similar to the sealing member 245. For example, the sealing member 845 may be an O-ring, a cylindrical gasket, or other annular seal. Furthermore, the sealing member 845 may be formed of a material resistant to corrosion in the presence of the process gas used during the substrate processing described above with respect to the sealing member 245. The sealing member 845 forms an axial seal between the surface 808 of the porous plug 844, the surface 307 of the electrostatic chuck 102, and the surface 809 of the cooling base 104. For example, the sealing member 845 contacts the surface 809 of the porous plug 844 and the surface 307 of the electrostatic chuck 102. Additionally, the sealing member 845 contacts the surface 809 of the cooling base 104.

[0048] The sealing member 845 is positioned adjacent to the porous plug 844. For example, the sealing member 845 is positioned between the porous plug 844 and the cooling base 104.

[0049] The cooling base 104 may include a recess 810. A surface 809 of the cooling base 104 forms the bottom of the recess 810. A sealing member 845 is positioned within the recess 810 and between the cooling base 104 and the electrostatic chuck 102. The recess 810 at least partially overlaps a portion of the cavity 211 and a portion of the electrostatic chuck 102, thereby allowing the recess 810 to effectively position and seal the sealing member 845 over the gap defined between the porous plug 844 and the electrostatic chuck 102. Compared to embodiments without the recess 810, the recess 810 allows for a larger cross-sectional seal without increasing the thickness of the bonding layer. Furthermore, the recess 810 reduces the impact of manufacturing tolerances and allows for sealing over a wider temperature range. In one or more embodiments, the cooling base 104 does not include the recess 810, and the sealing member 845 contacts the surface 809 in the area overlapping with the electrostatic chuck 102 and a portion of the cavity 211.

[0050] The sealing member 845 can secure the porous plug 844 within the cavity 211. For example, the sealing member 845 can apply force to the surface 808 of the porous plug 844 and the surface 809 of the cooling base 104, thereby holding the porous plug 844 within the cavity 211.

[0051] The sealing member 845 includes surfaces 856 and 857. One or more of surfaces 856 and 857 may have a substantially curved shape. The substantially curved shape may be convex or concave. Furthermore, one or more of surfaces 856 and 857 may have a substantially flat shape. Additionally, the bonding layer 204 may at least partially contact the sealing member 845.

[0052] Figure 9 This is a schematic cross-sectional view of a portion 201 of a substrate support base 116 having a porous plug 944 and a sealing member 845 according to one or more embodiments. Regarding Figure 8 The sealing component 845 is described in more detail. (See also: Regarding...) Figure 8 As described, the cooling base 104 includes a recess 810, and at least a portion of the sealing member 845 is positioned together with the recess 810.

[0053] and Figure 8 Compared to the porous plug 844 in the embodiment, the porous plug 944 includes a surface 908 extending into the gap 305 between the electrostatic chuck 102 and the cooling base 104. The diameter 931 of the portion of the porous plug 944 extending into the gap 305 is smaller than the diameter 930 of the portion of the porous plug 944 positioned within the cavity 211. The diameter 930 is larger than the diameter 832 of the opening 210. Alternatively, the diameter 930 is less than or equal to the diameter 832. Furthermore, the top surface 906 of the porous plug 944 contacts the surface 309 of the cavity 211. The porous plug 944 may have a chamfered edge along the surface 906, which is similar to... Figure 3 The chamfered edge of the porous plug 244.

[0054] The sealing member 845 is positioned adjacent to the porous plug 944. For example, the sealing member 845 is positioned between the porous plug 944 and the cooling base 104. The sealing member 845 contacts the surface 307 of the electrostatic chuck 102, the surface 907 of the porous plug 944, and the surface 809 of the cooling base 104, forming an axial seal between the electrostatic chuck 102 and the cooling base 104. The sealing member 845 can hold the porous plug 944 within the cavity 211. For example, the sealing member 845 can apply force to the surface 907 of the porous plug 944 and the surface 809 of the cooling base 104, thereby holding the porous plug 944 within the cavity 211. Furthermore, the sealing member 845 can contact the surface 909 of the porous plug 944.

[0055] The sealing members and porous plugs described herein are applicable to substrate support bases to protect the bonding layer that joins the cooling base to the electrostatic chuck from process gases. Advantageously, protecting the bonding layer from process gases reduces erosion of the bonding layer and maintains a substantially uniform temperature on the substrate. For example, sealing members resistant to process gases can be used to form radial and / or vertical seals between the porous plugs of the electrostatic chuck. Such sealing members prevent process gases from flowing into the gap between the electrostatic chuck and the cooling base and reduce erosion of the bonding layer. Therefore, substantially uniform heat transfer between the cooling base and the electrostatic chuck, as well as a uniform temperature on the substrate, is maintained.

[0056] While the embodiments described above pertain to the present disclosure, other and further embodiments may be designed without departing from the basic scope of the present disclosure and the scope defined by the appended claims.

Claims

1. An electrostatic chuck, comprising: The main body, the main body includes: Top surface; and cavity; An airflow channel is formed between the top surface and the cavity; and A porous plug is positioned within the cavity, wherein a sealing member is positioned between the porous plug and a sidewall of the cavity and configured to form a seal between the porous plug and the cavity.

2. The electrostatic chuck of claim 1, wherein the sealing member is further configured to form a seal between the porous plug and the cooling base engaged with the electrostatic chuck.

3. The electrostatic chuck of claim 2, wherein the sealing member is further positioned between the porous plug and the cooling base.

4. The electrostatic chuck of claim 1, wherein the sealing member fixes the porous plug within the cavity.

5. The electrostatic chuck as claimed in claim 1, wherein the sealing member is an O-ring or a cylindrical gasket.

6. The electrostatic chuck of claim 1, wherein the sealing member is one of the following: a fluorinated elastomer material, a perfluorinated elastomer material, and a high-purity ceramic.

7. The electrostatic chuck of claim 6, wherein the sealing member is formed of a material applied in the form of a liquid, paste, or gel.

8. The electrostatic chuck of claim 1, wherein the porous plug has one of the following shapes: T-shaped and cylindrical.

9. A substrate support base, the substrate support base comprising: An electrostatic chuck, the electrostatic chuck having a body, the body including a cavity; A cooling base, which is coupled to an electrostatic chuck via a bonding layer; An airflow channel is formed between the top surface of the electrostatic chuck and the bottom surface of the cooling base, and the airflow channel includes the cavity; A porous plug, wherein the porous plug is positioned within the cavity; as well as A sealing member is positioned between the porous plug and the sidewall of the cavity and is configured to form a seal between the porous plug and the cavity.

10. The substrate support base of claim 9, wherein the sealing member is further configured to form a seal between the porous plug and the cooling base.

11. The substrate support base of claim 10, wherein the sealing member is positioned between the porous plug and the cooling base.

12. The substrate support base of claim 9, wherein the sealing member secures the porous plug in the cavity.

13. The substrate support base of claim 9, wherein the cooling base includes a groove, and the sealing member is positioned within the groove.

14. The substrate support base as claimed in claim 9, wherein the sealing member is an O-ring or a cylindrical gasket.

15. The substrate support base as claimed in claim 9, wherein the sealing member is one of the following: a fluorinated elastomer material, a perfluorinated elastomer material, and a high-purity ceramic.

16. The substrate support base of claim 9, wherein the porous plug has one of the following shapes: T-shaped and cylindrical.

17. A process chamber, the process chamber comprising: The main body of the chamber has a processing space: An electrostatic chuck is disposed in the processing space, the electrostatic chuck having a top surface and a cavity, the top surface being configured to support a substrate during processing; A cooling base, which is coupled to an electrostatic chuck via a bonding layer; An airflow channel is formed between the top surface of the electrostatic chuck and the bottom surface of the cooling base, and the airflow channel passes through the cavity; A porous plug, wherein the porous plug is positioned within the cavity; as well as A sealing member is positioned between the porous plug and the sidewall of the cavity and is configured to form a seal between the porous plug and the cavity.

18. The process chamber of claim 17, wherein the sealing member is further configured to form a seal between the porous plug and the cooling base.

19. The process chamber of claim 18, wherein the sealing member is positioned between the porous plug and the cooling base.

20. The process chamber of claim 17, wherein the cooling base includes a groove, and the sealing member is positioned within the groove.

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