High-voltage servo driver discharge device based on high-resistance isolation sampling
By combining high-impedance isolated sampling with SiC MOS transistors, the problem of servo drivers being susceptible to interference and having slow response speed under high voltage is solved, achieving rapid discharge and improved stability, and protecting the servo driver from bus voltage fluctuations.
Patent Information
- Application Number
- CN202511226797.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-29
- Publication Date
- 2025-11-21
AI Technical Summary
Existing servo drives are susceptible to interference under high voltage and have slow discharge response speed, resulting in poor system stability and shortened service life.
By employing a high-impedance isolation sampling design and SiC MOS transistors, the high voltage of the bus is reduced to a sampling voltage through an isolated power supply module. A comparator and an isolation drive circuit are used to control the on/off state of the discharge resistor to achieve rapid discharge.
It improves the anti-interference capability and discharge response speed of the servo drive, enhances the stability and safety of the system, and protects the servo drive from the instantaneous high voltage impact of bus voltage fluctuations.