Display panel and manufacturing method thereof

Abstract

The invention provides a display panel and a manufacturing method thereof. The display panel comprises a substrate; the substrate comprises a first surface and a second surface which are oppositely arranged; the first electrode is arranged in the substrate and penetrates through the first surface and the second surface of the substrate, and the material of the first electrode comprises a conductive material; the isolation structure is positioned in the substrate and is used for realizing insulation isolation between the adjacent first electrodes; the display function layer is positioned on one side of the substrate; the driving circuit is positioned on one side, far away from the display function layer, of the substrate; the driving circuit and the display function layer are electrically connected through the first electrode. According to the display panel, the two ends of the first electrode located in the substrate are electrically connected with the display function layer and the driving circuit respectively, so that the distance between light emitting devices of the display panel is further reduced, and meanwhile the overall heat dissipation performance of the display panel is improved; in addition, the adjacent first electrodes are insulated and isolated through the arrangement of the isolation structures; therefore, the reliability and the service life of the display panel are improved.

Description

Technical Field

[0001] This application relates to the field of display panel technology, and more specifically, to a display panel and a method for manufacturing the same. Background Technology

[0002] Currently, the integration of micro-light-emitting device display panels mainly uses mass transfer technology. However, using this technology prevents the spacing between light-emitting devices from being further reduced. Furthermore, the devices and the substrate are usually interconnected using eutectic solders such as solder balls or indium balls. These materials have low thermal conductivity, which affects the overall heat dissipation performance of the display panel, thereby affecting the reliability and lifespan of the display panel.

[0003] Furthermore, the metal filling layer within the vias of the display panel substrate can easily diffuse within the substrate, thereby affecting the display performance and reliability of the display panel. For example, currently, electroplated copper is commonly used to fill the vias, but during subsequent high-temperature processes such as annealing or epitaxial growth, metal ions can diffuse along grain boundaries or defect channels into the surrounding semiconductor layers. The diffused metal ions may contaminate the active area, increase leakage current, and reduce the threshold voltage stability of the pixel driver transistor; they may also diffuse to the vicinity of the dielectric layer or quantum dot material, causing light scattering or absorption, resulting in uneven brightness or color shift. Summary of the Invention

[0004] In order to at least overcome the above-mentioned shortcomings in the prior art, the present application aims to provide a display panel, the display panel comprising: Substrate, the substrate including a first surface and a second surface disposed opposite to each other; A first electrode is disposed within the substrate and extends through a first surface and a second surface of the substrate, wherein the material of the first electrode includes a conductive material; The substrate includes an isolation structure for achieving insulating isolation between adjacent first electrodes; A display functional layer located on one side of the substrate; wherein the display functional layer is electrically connected to each of the first electrodes; A driving circuit located on the side of the substrate away from the display functional layer; wherein the driving circuit is electrically connected to each of the first electrodes.

[0005] In one possible implementation, the substrate further includes spaced-apart body portions, the isolation structure being located between adjacent body portions, and the first electrode being located within and penetrating the body portions.

[0006] In one possible implementation, the material of the main body includes a first type semiconductor material, the material of the isolation structure includes the first type semiconductor material and a second type semiconductor material doped into the first type semiconductor material, and a PN junction is formed between the main body and the isolation structure.

[0007] In one possible implementation, the display panel further includes a protective layer located between the first surface of the substrate and the display functional layer; The protective layer includes a first region, a second region, and a third region; The orthographic projection of the first region onto the first surface covers the orthographic projection of the first electrode onto the first surface, wherein the material of the first region includes a conductive material; The orthographic projection of the second region onto the first surface covers the orthographic projection of the isolation structure onto the first surface; The orthographic projection of the third region onto the first surface covers the orthographic projection of the main body onto the first surface; Preferably, the material of the first region includes copper; Preferably, the material of the second region comprises hydrogen-containing silicon nitride; Preferably, the material of the third region includes silicon carbonitride.

[0008] In one possible implementation, the display panel further includes a protective layer located between the first surface of the substrate and the display functional layer; The protective layer exposes the first electrode; the protective layer includes a second region and a third region; The orthographic projection of the second region onto the first surface covers the orthographic projection of the isolation structure onto the first surface; The orthographic projection of the third region onto the first surface covers the orthographic projection of the main body onto the first surface; Preferably, the material of the second region comprises hydrogen-containing silicon nitride; Preferably, the material of the third region includes silicon carbonitride.

[0009] In one possible implementation, the display functionality layer includes: A blue light-emitting substrate, wherein the blue light-emitting substrate is electrically connected to the first electrode; A dielectric layer located on the side of the blue light-emitting substrate away from the substrate, the dielectric layer including a plurality of pixel openings exposing the blue light-emitting substrate; wherein, the orthographic projection of each first electrode on the first surface is respectively located within the orthographic projection of each pixel opening on the first surface; The second electrode covers the side of the dielectric layer away from the substrate, the side of the dielectric layer facing each pixel opening, and at least a portion of the blue light-emitting substrate away from the substrate. An insulating layer covering the second electrode; Transparent materials and / or at least one color quantum dot conversion material are respectively located in different pixel openings.

[0010] In one possible implementation, the orthographic projection of the isolation structure onto the first surface forms a first grid structure; the orthographic projection of the dielectric layer onto the first surface forms a second grid structure; the first grid structure and the second grid structure at least partially overlap. Preferably, the orthographic projection of the first electrode on the first surface lies within the mesh openings of the first grid structure.

[0011] In one possible implementation, the pixel opening includes a first pixel opening, a second pixel opening, and a third pixel opening; The first pixel opening contains a colorless or blue transparent material, the second pixel opening contains a red quantum conversion material, and the third pixel opening contains a green quantum dot conversion material.

[0012] In one possible implementation, the isolation structure includes a fourth portion extending from the first surface to the second surface and a fifth portion extending from the second surface to the first surface, the fourth portion and the fifth portion intersecting within the substrate, the extension direction of the fourth portion forming a first angle with a direction perpendicular to the first surface, and the extension direction of the fifth portion forming a second angle with a direction perpendicular to the second surface, the absolute values ​​of the first angle and the second angle being greater than 0°.

[0013] This application also provides a method for manufacturing a display panel, the method comprising: A substrate is provided; the substrate has opposing first and second surfaces; First electrodes spaced apart and isolation structures located between adjacent first electrodes are formed within the substrate; wherein the material of the first electrodes includes a conductive material, and the isolation structures are used to achieve insulating isolation between adjacent first electrodes; A display functional layer electrically connected to the first electrode is formed on one side of the substrate; A drive circuit electrically connected to the first electrode is formed on the side of the substrate away from the display functional layer.

[0014] In one possible implementation, the step of forming the isolation structure includes: Ion implantation is performed on a portion of the substrate to form an isolation structure and a main body portion separated by the isolation structure; wherein the isolation structure is located between adjacent main body portions.

[0015] In one possible implementation, the step of forming the isolation structure includes: A first metal shielding layer is formed on a first surface of the substrate, the first metal shielding layer having a first opening that isolates the structure injection region; Using the first metal shielding layer as a mask, ion implantation is performed to form the first part; Remove the first metal shielding layer; A second metal shielding layer is formed on the second surface of the substrate. The second metal shielding layer has a second opening that isolates the structure injection region. The orthographic projection of the second opening on the first surface and the orthographic projection of the corresponding first opening on the first surface at least partially overlap. Using the second metal shielding layer as a mask, ion implantation is performed to form a second portion; wherein, the second portion intersects with the second portion inside the substrate; Remove the second metal shielding layer.

[0016] In one possible implementation, after the step of forming spaced-apart first electrodes and isolation structures located between adjacent first electrodes within the substrate, the method further includes: A protective layer is deposited on the first surface of the substrate, wherein the protective layer includes a first region, a second region, and a third region; wherein the orthographic projection of the first region on the first surface covers the orthographic projection of the first electrode on the first surface, and the material of the first region includes a conductive material; the orthographic projection of the second region on the first surface covers the orthographic projection of the isolation structure on the first surface; and the orthographic projection of the third region on the first surface covers the orthographic projection of the main body portion on the first surface.

[0017] In one possible implementation, when performing the step of forming spaced-apart first electrodes within the substrate and an isolation structure located between adjacent first electrodes, the method further includes: A protective layer is deposited on the first surface of the substrate, wherein the protective layer exposes the first electrode, and the protective layer includes a second region and a third region; wherein the orthographic projection of the second region on the first surface covers the orthographic projection of the isolation structure on the first surface; and the orthographic projection of the third region on the first surface covers the orthographic projection of the main body portion on the first surface.

[0018] In one possible implementation, the material of the second region includes hydrogen-containing silicon nitride; After performing the step of depositing a protective layer on the first surface of the substrate, the method further includes: The display panel is baked and annealed to allow hydrogen ions from the second region to penetrate the isolation structure and repair the lattice.

[0019] In one possible implementation, the step of providing a display functional layer electrically connected to the first electrode on the first surface includes: A blue light-emitting substrate is covered on the substrate so that the blue light-emitting substrate is electrically connected to the first electrode; A dielectric layer is formed on the side of the blue light-emitting substrate away from the substrate, the dielectric layer having a plurality of pixel openings; wherein the orthographic projection of the pixel openings on the first surface at least covers the orthographic projection of the first electrode on the first surface; A second electrode is formed on the dielectric layer; wherein the second electrode covers the side of the dielectric layer away from the substrate, the side of the dielectric layer facing each of the pixel openings, and at least a portion of the blue light-emitting substrate away from the substrate. An insulating layer is formed on the side of the second electrode away from the substrate, covering the second electrode; A light-transmitting material and / or at least one color quantum dot conversion material are disposed within the pixel opening.

[0020] In one possible implementation, the step of performing ion implantation using the first metal shielding layer as a mask to form the first portion includes: Using the first metal shielding layer as a mask, and with the direction perpendicular to the first surface as a baseline, ion implantation is performed at a first angle to form the first part; The step of using the second metal shielding layer as a mask to perform ion implantation to form the second part includes: Using the second metal shielding layer as a mask, and with the direction perpendicular to the first surface as a baseline, ion implantation is performed at a second angle to form the second part; Preferably, the first angle includes 5° to 7°; Preferably, the second angle includes -5° to -7°.

[0021] This application also provides an electronic device, which includes a display panel as described in any of the preceding claims, or the electronic device includes a display panel made by any of the preceding claims.

[0022] Compared with the prior art, this application has the following beneficial effects: This application further reduces the spacing between the light-emitting devices of the display panel by electrically connecting the two ends of the first electrode located in the substrate to the display functional layer and the driving circuit, respectively, while improving the overall heat dissipation performance of the display panel; in addition, the setting of the isolation structure enables insulation isolation between adjacent first electrodes; thereby improving the reliability and lifespan of the display panel. Attached Figure Description

[0023] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings required in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 This is one of the structural schematic diagrams of the display panel provided in this embodiment; Figure 2 This is the second schematic diagram of the display panel provided in this embodiment; Figure 3 This is a top view of the substrate of the display panel provided in this embodiment; Figure 4 This is the third schematic diagram of the display panel provided in this embodiment; Figure 5 This is the fourth schematic diagram of the display panel provided in this embodiment; Figure 6 This is the fifth schematic diagram of the display panel provided in this embodiment; Figure 7 This is the sixth schematic diagram of the display panel structure provided in this embodiment; Figure 8 This is a flowchart illustrating the manufacturing method of the display panel provided in this embodiment; Figures 9(a)-9(b) This is a schematic diagram illustrating the manufacturing method of the display panel provided in this embodiment; Figures 10(a)-10(b) A schematic diagram illustrating the method for manufacturing the first part of the isolation structure provided in this embodiment; Figures 11(a)-11(b) A schematic diagram illustrating the method for manufacturing the second part of the isolation structure provided in this embodiment; Figure 12 A schematic diagram illustrating the method for fabricating the protective layer provided in this embodiment; Figures 13(a)-13(b) This is a schematic diagram illustrating the fabrication method of the isolation structure, the first electrode, and the protective layer provided in this embodiment; Figures 14(a)-14(b) This is a schematic diagram illustrating the method for manufacturing the display function layer provided in this embodiment.

[0025] Icons: Display panel-10; Substrate-100; First surface-101; Second surface-102; Main body-110; Isolation structure-120; First electrode-131; Display functional layer-200; Driving circuit-300; Through hole-130; First region-410; Second region-420; Third region-430; Blue light-emitting substrate-210; Metal bump-211; Dielectric layer-220; Second electrode-230; Insulating layer-240; First pixel opening-251; Second pixel opening-252; Third pixel opening-253; First angle-α; Second angle-β; First metal shielding layer-191; First opening of the isolation structure injection region-192; Second metal shielding layer-193; Second opening of the isolation structure injection region-194; First part-121; Second part-122; Blue light-emitting substrate epitaxial layer-221. Detailed Implementation

[0026] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0027] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0028] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0029] In the description of this application, it should be noted that the terms "upper," "lower," etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product is in use. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. In addition, the terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0030] Furthermore, terms such as "horizontal," "vertical," and "sag" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal relative to "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0031] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set up," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0032] It should be noted that, where there is no conflict, different features in the embodiments of this application can be combined with each other.

[0033] This application provides a display panel 10, please refer to... Figure 1 The display panel 10 includes a substrate 100 having a first surface 101 and a second surface 102 disposed opposite to each other, a first electrode 131, a display functional layer 200, and a driving circuit 300.

[0034] In this embodiment, the display panel 10 can be a mini light-emitting diode (Mini LED) display panel or a micro light-emitting diode (Micro LED) display panel.

[0035] Alternatively, the material of the substrate 100 may include silicon.

[0036] The first electrode 131 is disposed within the substrate 100 and extends through the first surface 101 and the second surface 102 of the substrate 100, wherein the material of the first electrode 131 includes a conductive material.

[0037] Optionally, the material of the first electrode 131 may include copper. Copper has good electrical and thermal conductivity, and as the first electrode 131, it can achieve low signal delay and efficient heat dissipation. In addition, copper has good electroplating filling ability.

[0038] It should be noted that, in addition to copper, the first electrode 131 in this embodiment can also be made of other materials, and no specific limitation is made here.

[0039] Optionally, the contact surface between the first electrode 131 and the substrate 100 may also include a stacked adhesion layer, a diffusion barrier layer, or other film layers to improve the stability of the first electrode 131.

[0040] The substrate 100 includes an isolation structure 120; the isolation structure 120 is used to achieve insulating isolation between adjacent first electrodes 131.

[0041] Since the material of the conductive first electrode 131 may migrate under specific conditions such as high current or high temperature, eventually causing multiple first electrodes 131 in the substrate 100 to be electrically connected, thereby affecting the light-emitting function of the display panel 10, in this embodiment, an isolation structure 120 is formed in the substrate 100. The isolation structure 120 is located between adjacent first electrodes 131, which can prevent the material of the first electrode 131 from migrating and form electrical isolation between adjacent first electrodes 131.

[0042] The display functional layer 200 is located on one side of the substrate 100; wherein the display functional layer 200 is electrically connected to each of the first electrodes 131.

[0043] In this embodiment, the display functional layer 200 includes multiple light-emitting units. For example, the multiple light-emitting units include multiple first light-emitting units, multiple second light-emitting units, and multiple third light-emitting units, and the first light-emitting units, second light-emitting units, and third light-emitting units can each display light of different colors.

[0044] The driving circuit 300 is located on the side of the substrate 100 away from the display functional layer 200; wherein the driving circuit 300 is electrically connected to each of the first electrodes 131.

[0045] In this embodiment, the driving circuit 300 drives each light-emitting unit to emit light through each first electrode 131.

[0046] Optionally, the first electrode 131 can be an anode. The first electrode 131 is connected to multiple light-emitting units in the display functional layer 200, and the driving circuit 300 drives each light-emitting unit to emit light through each first electrode 131.

[0047] In this embodiment, by electrically connecting the two ends of the first electrode 131 located in the substrate 100 to the display functional layer 200 and the driving circuit 300 respectively, the spacing between the light-emitting devices is further reduced, and the overall heat dissipation performance of the display panel 10 is improved. The isolation structure 120 also enables insulation isolation between adjacent first electrodes 131, thereby improving the reliability and lifespan of the display panel 10.

[0048] In one possible implementation, please refer to Figure 2The substrate 100 also includes a main body portion 110 spaced apart, an isolation structure 120 located between adjacent main body portions 110, and a first electrode 131 located within and penetrating the main body portion 110.

[0049] In this embodiment, please refer to Figure 3 The orthographic projection of the isolation structure 120 onto the first surface 101 can be grid-like. The grid-like isolation structure 120 separates the plurality of main body portions 110 so as to insulate and isolate the first electrode 131 in the plurality of main body portions 110.

[0050] It should be noted that in other implementations of this embodiment, the substrate 100 may not include the main body 110, but only have an isolation structure 120 surrounding the plurality of first electrodes 131; or, the isolation structure 120 may be configured in other forms. No specific limitation is made here.

[0051] In one possible implementation, the material of the main body 110 includes a first type semiconductor material, the material of the isolation structure 120 includes a first type semiconductor material and a second type semiconductor material doped into the first type semiconductor material, and a PN junction is formed between the main body 110 and the isolation structure 120.

[0052] Optionally, if the first type of semiconductor material is a P-type silicon substrate, then the implanted second type of semiconductor material is an N-type dopant, such as phosphorus.

[0053] In this embodiment, the main body 110 is made of a first-type semiconductor material, and the isolation structure 120 is made of a second-type semiconductor material through ion implantation or diffusion processes. A PN junction is formed at the interface between the two due to the difference in carrier concentration. When the doped region comes into contact with the substrate 100, a space charge region is formed at the interface, in which most carriers are depleted due to recombination, forming a depletion region, thereby establishing a built-in electric field pointing from the N region to the P region. When ions in the first electrode 131 attempt to migrate under the action of an applied electric field or thermal stress, the built-in electric field of the PN junction will generate a reverse blocking effect. The electric field force will hinder the diffusion of positively charged ions in a specific direction. The depletion region also increases the resistivity of the isolation structure 120, making it difficult for ions to migrate, thereby suppressing the electromigration and diffusion phenomena of the first electrode 131 and improving the reliability of the display panel 10.

[0054] In one possible implementation, please refer to Figure 4 The display panel 10 also includes a protective layer located between the first surface 101 of the substrate 100 and the display functional layer 200; the protective layer includes a first region 410, a second region 420 and a third region 430.

[0055] In this embodiment, the protective layer is used to maintain the stability of the substrate 100 and its internal structure.

[0056] The orthographic projection of the first region 410 on the first surface 101 covers the orthographic projection of the first electrode 131 on the first surface 101, wherein the material of the first region 410 includes a conductive material.

[0057] In this embodiment, since the material of the first electrode 131 is a conductive material, the first electrode 131 is used to electrically connect the driving circuit 300 and the display functional layer 200. Therefore, the protective layer is provided with a first region 410, the material of the first region 410 includes a conductive material, and the first electrode 131 can be electrically connected to the display functional layer 200 through the first region 410.

[0058] Optionally, the material of the first region 410 may include copper. Optionally, the material of the first region 410 may be the same as the material of the first electrode 131. In this way, using the same material can ensure the stability of the electrical connection and the structural stability between the first region 410 and the electrode 131.

[0059] The orthographic projection of the second region 420 onto the first surface 101 covers the orthographic projection of the isolation structure 120 onto the first surface 101.

[0060] After high-temperature processing, the isolation structure 120 will develop interface dangling bonds and dopant-vacancy recombination defects. Therefore, in this embodiment, a second region 420 is provided in the protective layer. The material used in the second region 420 contains hydrogen, which can diffuse to the interface between the second region 420 and the isolation structure 120 during annealing, undergoing a passivation reaction and combining with interface dangling bonds and dopant-vacancy recombination defects, thereby reducing the interface state density, neutralizing electroactive defects, and thus reducing leakage current and improving the lifespan of the display panel 10.

[0061] Optionally, the material of the second region 420 includes silicon nitride containing hydrogen.

[0062] The orthographic projection of the third region 430 on the first surface 101 covers the orthographic projection of the main body 110 on the first surface 101.

[0063] In this embodiment, the third region 430 is used to increase the strength of the display panel 10, thereby improving the display panel 10's resistance to bending or impact stress.

[0064] Optionally, the material of the third region 430 includes silicon carbonitride.

[0065] In this embodiment, copper, silicon nitride, and silicon carbonitride are used as the materials for the first region 410, the second region 420, and the third region 430 of the protective layer, respectively. This allows for hybrid bonding, thereby improving the mechanical strength and electrical performance of the display panel 10. At the same time, it enables electronic devices using the display panel 10 in this embodiment to achieve high heat dissipation and narrow bezels.

[0066] In one possible implementation, the display panel 10 further includes another protective layer located between the second surface 102 of the substrate 100 and the driving circuit 300; corresponding to the first region 410, the second region 420 and the third region 430, the other protective layer includes a fourth region, a fifth region and a sixth region.

[0067] The orthographic projection of the fourth region on the second surface 102 covers the orthographic projection of the first electrode 131 on the second surface 102, wherein the material of the fourth region includes a conductive material. The first electrode 131 can be electrically connected to the drive circuit 300 via the fourth region.

[0068] The orthographic projection of the fifth region on the second surface 102 covers the orthographic projection of the isolation structure 120 on the second surface 102.

[0069] In this embodiment, the material used in the fifth region contains hydrogen, which can diffuse to the interface between the fifth region and the isolation structure 120 during annealing, undergo a passivation reaction, and combine with interface dangling bonds and dopant-vacancy recombination defects, thereby reducing the interface state density, neutralizing electroactive defects, and thus reducing leakage current and improving the lifespan of the display panel 10.

[0070] The orthographic projection of the sixth region on the second surface 102 does not coincide with the orthographic projections of the isolation structure 120 and the first electrode 131 on the second surface 102. The sixth region is used to increase the strength of the display panel 10, thereby improving the display panel 10's resistance to bending or impact stress.

[0071] In this embodiment, copper, silicon nitride, and silicon carbonitride can be used as the materials for the fourth, fifth, and sixth regions of another protective layer, respectively, thereby achieving hybrid bonding and further improving the mechanical strength and electrical performance of the display panel 10.

[0072] In one possible implementation, please refer to Figure 5 The display panel 10 also includes a protective layer located between the first surface 101 of the substrate 100 and the display functional layer 200.

[0073] In this embodiment, the protective layer is used to maintain the stability of the substrate 100 and its internal structure.

[0074] The protective layer exposes the first electrode 131; the protective layer includes a second region 420 and a third region 430.

[0075] In this embodiment, the first electrode 131 is exposed to the protective layer and can be directly electrically connected to the display functional layer 200. Simultaneously, directly fabricating the first electrode 131 through the substrate 100 and the protective layer can improve the stability and conductivity of the display panel 10.

[0076] The second region 420, when projected onto the first surface 101, covers the projection of the isolation structure 120 onto the first surface 101. The second region 420 is used to allow hydrogen ions to penetrate the isolation structure 120 to repair the lattice, thereby improving the lifespan of the display panel 10.

[0077] Optionally, the material of the second region 420 includes silicon nitride containing hydrogen.

[0078] The orthographic projection of the third region 430 onto the first surface 101 covers the orthographic projection of the main body 110 onto the first surface 101. The third region 430 is used to increase the strength of the display panel 10, thereby improving the display panel 10's resistance to bending or impact stress.

[0079] Optionally, the material of the third region 430 includes silicon carbonitride.

[0080] In one possible implementation, please refer to Figure 6 The display functional layer 200 includes a blue light-emitting substrate 210, a dielectric layer 220, a second electrode 230, an insulating layer 240, a light-transmitting material, and / or at least one color quantum dot conversion material. Multiple light-emitting units in the display functional layer 200 can be electrically connected to the driving circuit 300 through their respective first electrodes 131, thereby emitting light under the drive of the driving circuit 300. The quantum dot conversion material and its corresponding first electrode 131, blue light-emitting substrate 210, and second electrode 230 constitute a light-emitting unit, and the blue light-emitting substrate shared by all light-emitting units is disposed in the same layer and interconnected.

[0081] The blue light-emitting substrate 210 is electrically connected to the first electrode 131. The blue light-emitting substrate 210 includes an intrinsic gallium nitride layer, an n-type gallium nitride layer, a multi-quantum well layer, and a p-type gallium nitride layer stacked in a direction away from the substrate 100. In this way, efficient and stable blue light emission can be achieved, and an excitation source can be provided for the color conversion layer above.

[0082] In addition, the side of the blue light-emitting substrate 210 near the substrate 100 also includes a plurality of metal bumps 211, which are respectively connected to each of the first electrodes 131 to realize the electrical connection between the blue light-emitting substrate 210 and the first electrodes 131.

[0083] The dielectric layer 220 is located on the side of the blue light-emitting substrate 210 away from the substrate 100. The dielectric layer 220 includes a plurality of pixel openings exposing the blue light-emitting substrate 210; wherein the orthographic projection of each first electrode 131 on the first surface 101 is respectively located within the orthographic projection of each pixel opening on the first surface 101. In this way, an independent light-emitting area for each sub-pixel can be defined, preventing light crosstalk between adjacent pixels and ensuring that the subsequently filled light-transmitting material or quantum dot conversion material can accurately correspond to its respective light-emitting unit. The material of the dielectric layer 220 includes an insulating material.

[0084] The second electrode 230 covers the side of the dielectric layer 220 away from the substrate 100, the side of the dielectric layer 220 facing each pixel opening, and at least a portion of the blue light-emitting substrate 210 of the pixel opening away from the substrate 100.

[0085] Specifically, the second electrode 230 includes a third, fourth, and fifth portion that are interconnected. The third portion is located on the side of the dielectric layer 220 away from the substrate 100, the fourth portion is located on the side of the dielectric layer 220 facing each pixel opening, and the fifth portion is located at the pixel opening and on the side of the blue light-emitting substrate 210 away from the substrate 100, and is in contact with the blue light-emitting substrate 210. This ensures that the second electrode 230 forms a large-area, low-resistance ohmic contact with the p-type gallium nitride layer of the blue light-emitting substrate 210, and provides a reliable common cathode connection for multiple light-emitting units through its fifth portion.

[0086] An insulating layer 240 covers the second electrode 230. In this way, the second electrode 230 can be electrically isolated from subsequent functional layers or structures, preventing short circuits and providing a planarized surface to facilitate subsequent processes.

[0087] The light-transmitting material and / or at least one color quantum dot conversion material are located in different pixel openings. In this way, blue sub-pixels can be formed by directly transmitting blue light through the light-transmitting material, or blue light can be converted into red or green light using the quantum dot conversion material, thereby enabling the display panel 10 to achieve full-color display.

[0088] In this embodiment, the display functional layer 200 includes a second electrode 230, which is a common electrode shared by multiple light-emitting units. Thus, the driving circuit 300 can provide a driving voltage to the first electrode 131 in a single light-emitting unit, thereby creating a potential difference between the first electrode 131 and the second electrode 230, and causing the single light-emitting unit to emit light.

[0089] In one possible implementation, the isolation structure 120 has a first grid structure as its orthographic projection on the first surface 101; the dielectric layer 220 has a second grid structure as its orthographic projection on the first surface 101; the first grid structure and the second grid structure at least partially overlap.

[0090] In this embodiment, the isolation structure 120 and the dielectric layer 220 are aligned, thereby aligning each first electrode 131 with each light-emitting unit. The stacked design in which the first grid structure and the second grid structure at least partially overlap can also make the mechanical stress distribution of the display panel 10 more uniform.

[0091] Optionally, the orthographic projection of the first electrode 131 onto the first surface 101 is within the mesh of the first grid structure. In this way, the multiple first electrodes 131 are electrically isolated through the isolation structure 120, improving the reliability of the display panel 10.

[0092] In one possible implementation, please refer to Figure 6 The pixel openings include a first pixel opening 251, a second pixel opening 252, and a third pixel opening 253.

[0093] The first pixel opening 251 contains a colorless or blue light-transmitting material, the second pixel opening 252 contains a red quantum conversion material, and the third pixel opening 253 contains a green quantum dot conversion material.

[0094] In this embodiment, the display panel 10 includes multiple light-emitting units, including multiple first light-emitting units, multiple second light-emitting units, and multiple third light-emitting units. The first light-emitting units, the second light-emitting units, and the third light-emitting units correspond to the colorless / blue light-transmitting material, the red quantum dot conversion material, and the green quantum dot conversion material in the first pixel opening 251, the second pixel opening 252, and the third pixel opening 253, respectively. They can emit blue, red, and green light under the drive of the driving circuit 300, thereby enabling the display panel 10 to achieve full-color display.

[0095] In one possible implementation, please refer to Figure 7 The isolation structure 120 includes a first portion 121 extending from the first surface 101 to the second surface 102 and a second portion 121 extending from the second surface 102 to the first surface 101. The first portion 121 and the second portion 121 intersect inside the substrate 100. The extension direction of the first portion 121 forms a first angle α with the direction perpendicular to the first surface 101, and the extension direction of the second portion 121 forms a second angle β with the direction perpendicular to the second surface 102. The absolute values ​​of the first angle α and the second angle β are both greater than 0°.

[0096] When forming the isolation structure 120, ions need to be implanted into the substrate 100. Since ions implanted in a direction perpendicular to the substrate 100 will cause channeling effect, the ion penetration depth will exceed the design value, causing the position of the PN junction to deviate from the expected value; it will also cause uneven ion distribution, thus affecting the electrical performance of the device.

[0097] Therefore, in this embodiment, tilted implantation can be used, forming an angle greater than 0° between the ion implantation direction and the direction perpendicular to the surface of the substrate 100. At this angle, ions collide frequently with crystal atoms, causing their energy to decay rapidly, thereby disrupting the channel structure, preventing ions from penetrating in a straight line and confining them to a certain depth, ultimately achieving uniform distribution, and thus ensuring that the formed PN junction meets the design requirements.

[0098] In one possible implementation, the display panel 10 includes a display area and a non-display area that at least partially surrounds the display area. Specifically, the display area includes a plurality of light-emitting units arranged in an array to realize image display, while the non-display area is mainly used to integrate the driving circuit 300 and signal traces.

[0099] The display panel 10 also includes a common voltage trace located in the non-display area, and the second electrode 230 is connected to the common voltage trace at the edge of the display area. In this way, the common cathode voltage can be stably transmitted to the entire display area, reducing the resistance of the second electrode 230 and ensuring display uniformity.

[0100] Optionally, the first electrode 131 can be an anode, and is connected to multiple light-emitting units in the display functional layer 200. The driving circuit 300 drives each light-emitting unit to emit light through each of the first electrodes 131. The second electrode 230 can be a cathode, and is connected to multiple light-emitting units and a common voltage trace. When there is a potential difference between the first electrode 131 and the second electrode 230, the display functional layer 200 located between the first electrode 131 and the second electrode 230 is driven to emit light.

[0101] Based on the same inventive concept, this application also provides a method for manufacturing a display panel, please refer to... Figure 8 Figures 9(a) and 9(b) include the following steps.

[0102] In this embodiment, the display panel 10 may be a mini light-emitting diode display panel 10 (Mini LED) or a micro light-emitting diode display panel 10 (Micro LED).

[0103] Step S11, a substrate 100 is provided; the substrate 100 has a first surface 101 and a second surface 102 opposite to each other.

[0104] Optionally, substrate 100 may include silicon substrate 100.

[0105] In step S12, first electrodes 131 spaced apart and isolation structures 120 located between adjacent first electrodes 131 are formed in the substrate 100; wherein the material of the first electrodes 131 includes a conductive material, and the isolation structure 120 is used to achieve insulation isolation between adjacent first electrodes 131.

[0106] In this embodiment, by forming an isolation structure 120 on the substrate 100, the isolation structure 120 is located between adjacent first electrodes 131, which can prevent the material of the first electrodes 131 from migrating, thereby forming electrical isolation between adjacent first electrodes 131 and improving the reliability of the display panel 10.

[0107] In step S13, a display functional layer 200 electrically connected to the first electrode 131 is formed on one side of the substrate 100.

[0108] In this embodiment, the display functional layer 200 includes multiple light-emitting units. For example, the multiple light-emitting units include multiple first light-emitting units, multiple second light-emitting units, and multiple third light-emitting units. The first light-emitting units, second light-emitting units, and third light-emitting units can each display light of different colors, and the three can be arranged in a preset manner to form a full-color display.

[0109] Step S14: A driving circuit 300 electrically connected to the first electrode 131 is formed on the side of the substrate 100 away from the display functional layer 200.

[0110] In this embodiment, the driving circuit 300 is electrically connected to the display function layer 200 via the first electrode 131, and is used to provide an independent and controllable driving current to each light-emitting unit through the first electrode 131, so as to realize grayscale control and dynamic image display on the display panel 10.

[0111] In one possible implementation, step S12 may include the following sub-steps.

[0112] Step S1211: A plurality of through holes 130 are formed on the substrate 100, extending from the first surface 101 to the second surface 102.

[0113] For example, a via 130 can be formed on the substrate 100 using a dry etching process.

[0114] Step S1212: A first electrode 131 is formed in the through hole 130; wherein the material of the first electrode 131 includes a conductive material.

[0115] For example, an adhesion layer and a diffusion barrier layer can be deposited sequentially on the inner wall of the through hole 130, and then a conductive material can be filled into the through hole 130 by electroplating to form the first electrode 131.

[0116] Step S1213: An isolation structure 120 is formed based on the substrate 100. The isolation structure 120 is used to achieve insulation isolation between adjacent first electrodes 131.

[0117] Thus, spaced first electrodes 131 and isolation structures 120 for isolating the plurality of first electrodes 131 can be formed within the substrate 100.

[0118] In one possible implementation, the step of forming the isolation structure 120 in step S12 includes: forming the isolation structure 120 and the main body portion 110 separated by the isolation structure 120 by ion implantation into a portion of the substrate 100; wherein the isolation structure 120 is located between adjacent main body portions 110.

[0119] Thus, the orthographic projection of the isolation structure 120 onto the first surface 101 is a grid. The grid-shaped isolation structure 120 separates the plurality of main body portions 110 so as to insulate and isolate the first electrode 131 in the plurality of main body portions 110.

[0120] In one possible implementation, the step of forming the isolation structure 120 in step S12 includes the following sub-steps.

[0121] Optionally, in this embodiment, a first electrode 131 may be formed first, wherein the via 130 where the first electrode 131 is located does not completely penetrate the substrate 100; then, ion implantation is performed on the first surface 101 to form the first part 121 of the isolation structure 120; then, the substrate 100 is flipped, and the other side of the substrate 100 is subjected to grinding, thinning, polishing and other steps to remove excess substrate 100, so that the via 130 where the first electrode 131 is located completely penetrates the substrate 100; finally, ion implantation is performed on the second surface 102 to form the second part 121 of the isolation structure 120.

[0122] Referring to Figures 10(a) and 10(b), a first metal shielding layer 191 is formed on the first surface 101 of the substrate 100. The first metal shielding layer 191 has a first opening 192 in the injection region of the isolation structure 120.

[0123] In this embodiment, the first metal shielding layer 191 may include a high-temperature resistant metal film such as chromium or molybdenum.

[0124] Specifically, a metal layer can be deposited and patterned on the first surface 101 of the substrate 100 using photolithography to form a first opening 192 pattern corresponding to the injection region of the preset isolation structure 120.

[0125] Using the first metal shielding layer 191 as a mask, ion implantation is performed to form the first part 121.

[0126] In this embodiment, if the substrate 100 material is a first type semiconductor material, then the implanted ions in the first portion 121 are a second type semiconductor material.

[0127] Optionally, if the first type of semiconductor material is a P-type silicon substrate, then N-type dopants are implanted.

[0128] Remove the first metal shielding layer 191.

[0129] Specifically, wet etching can be used to remove the first metal masking layer 191 to avoid damaging the surface of the substrate 100.

[0130] Referring to Figures 11(a) and 11(b), a second metal shielding layer 193 is formed on the second surface 102 of the substrate 100. The second metal shielding layer 193 has a second opening 194 in the injection region of the isolation structure 120.

[0131] In this embodiment, the second metal shielding layer 193 may include a high-temperature resistant metal film such as chromium or molybdenum.

[0132] Specifically, a metal layer can be deposited and patterned on the second surface 102 of the substrate 100 using photolithography to form a second opening 194 pattern corresponding to the injection region of the preset isolation structure 120.

[0133] The orthographic projection of the formed second opening 194 on the first surface 101 and the orthographic projection of the corresponding first opening 192 on the first surface 101 at least partially coincide. In this way, the finally formed first portion 121 and the corresponding second portion 122 can at least partially intersect within the substrate 100.

[0134] Using the second metal shielding layer 193 as a mask, ion implantation is performed to form the second part 121; wherein the first part 121 and the second part 121 intersect inside the substrate 100.

[0135] In this embodiment, the ionic material implanted in the first part 121 is the same as that implanted in the second part 121.

[0136] Thus, the first part 121 and the second part 121 formed by double-sided alignment injection together constitute the PN junction isolation structure 120, which can block material migration between adjacent first electrodes 131 in the depletion region.

[0137] Remove the second metal shielding layer 193.

[0138] Specifically, wet etching can be used to remove the second metal masking layer 193 to avoid damaging the surface of the substrate 100.

[0139] In one possible implementation, after performing step S12, the method for manufacturing the display panel further includes: depositing a protective layer on a first surface 101 of the substrate 100, wherein the protective layer includes a first region 410, a second region 420, and a third region 430; wherein the orthographic projection of the first region 410 on the first surface 101 covers the orthographic projection of the first electrode 131 on the first surface 101, and the material of the first region 410 includes a conductive material; the orthographic projection of the second region 420 on the first surface 101 covers the orthographic projection of the isolation structure 120 on the first surface 101; and the orthographic projection of the third region 430 on the first surface 101 covers the orthographic projection of the main body portion 110 on the first surface 101.

[0140] Specifically, a material, such as silicon carbonitride, can be deposited on the first surface 101 to form the third region 430. Then, an opening pattern corresponding to the first region 410 and the second region 420 can be formed on the third region 430 by photolithography. Next, the material of the third region 430 within the opening pattern corresponding to the first region 410 and the second region 420 of the exposed substrate 100 is removed to form the opening corresponding to the first region 410 and the opening corresponding to the second region 420 of the exposed substrate 100. Finally, a copper seed layer is deposited in the first region 410, and electroplating is performed in the electrolyte using the copper seed layer as the cathode to fill the opening region corresponding to the first region 410. The material of the second region 420, such as silicon hydrogen nitride, is deposited in the second region 420.

[0141] In addition, the method for manufacturing the display panel also includes: depositing another protective layer on the second side 102 of the substrate 100, wherein the other protective layer on the second side 102 can be disposed corresponding to the protective layer on the first side 101, including a fourth region, a fifth region and a sixth region.

[0142] Optionally, when forming the protective layer, the protective layer can be formed on the first surface 101 and the second surface 102 after the isolation structure 120 has been fully formed on the substrate 100. Please refer to... Figure 12 Alternatively, a protective layer can be formed on the first surface 101 after the first part 121 is formed in the isolation structure 120, and another protective layer can be formed on the second surface 102 after the second part 121 is formed.

[0143] Alternatively, in another possible implementation, while performing step S12, the method for manufacturing the display panel may further include the following steps.

[0144] A protective layer is deposited on the first surface 101 of the substrate 100, wherein the protective layer exposes the first electrode 131, and the protective layer includes a second region 420 and a third region 430; wherein the orthographic projection of the second region 420 on the first surface 101 covers the orthographic projection of the isolation structure 120 on the first surface 101; and the orthographic projection of the third region 430 on the first surface 101 covers the orthographic projection of the main body 110 on the first surface 101.

[0145] Specifically, referring to Figures 13(a) and 13(b), the first electrode 131, the isolation structure 120, and the protective layer located on both sides of the substrate 100 can be formed through the following steps.

[0146] First, materials such as silicon carbonitride are deposited on both sides of the substrate 100 for the third region 430 and the sixth region. Then, the opening patterns corresponding to the first electrode 131, the second region 420 and the fifth region are formed on the third region 430 and the sixth region by photolithography.

[0147] Then, the material of the third region 430 within the opening pattern corresponding to the second region 420 and the fifth region is removed to form the openings corresponding to the second region 420 and the fifth region of the exposed substrate 100. Ion implantation is performed into the substrate 100 at the openings corresponding to the second region 420 and the fifth region to form an isolation structure 120, wherein the orthographic projection of the isolation structure 120 on the first surface 101 can be a grid. The material of the second region 420 and the fifth region, such as silicon nitride, is deposited within the openings corresponding to the second region 420 and the fifth region to form the second region 420 and the fifth region.

[0148] Next, multiple through holes are formed at the opening pattern corresponding to the first electrode 131 by dry etching, penetrating the substrate 100 and the material deposited on both sides of the third region 430 and the sixth region, wherein each main body 110 corresponds to one through hole; a conductive seed layer is deposited on the inner wall of the multiple through holes and the surface of the substrate 100, and electroplating is performed in the electrolyte using the conductive seed layer as the cathode to form a filling structure that at least covers the through holes.

[0149] Finally, the filling structure formed in the aforementioned steps is ground to remove the conductive seed layer and filling structure outside the inner wall of the through hole, thereby simultaneously forming the first electrode 131 and the protective layer inside the main body 110.

[0150] In this embodiment, the first electrode 131 penetrates both the substrate 100 and the protective layer, which can ensure the electrical connection stability and structural stability between the first electrode 131 and the display functional layer 200 and the driving circuit 300, respectively. At the same time, it reduces the number of steps in the manufacturing method of the display panel in this embodiment and improves production efficiency.

[0151] In one possible implementation, the material of the second region 420 includes hydrogen-containing silicon nitride.

[0152] After performing the step of depositing a protective layer on the first surface 101 of the substrate 100, the method for manufacturing the display panel further includes: performing baking annealing on the display panel 10 to allow hydrogen ions in the second region 420 to penetrate the isolation structure 120 to repair the lattice.

[0153] In this embodiment, the hydrogen-containing silicon nitride can diffuse to the interface between the second region 420 and the isolation structure 120 during annealing, undergo a passivation reaction, and combine with interface dangling bonds and dopant-vacancy recombination defects, thereby reducing the interface state density, neutralizing electroactive defects, and thus reducing leakage current and improving the lifespan of the display panel 10.

[0154] In one possible implementation, referring to Figures 14(a) and 14(b), step S13 includes the following sub-steps.

[0155] A blue light-emitting substrate 210 is covered on the substrate 100 so that the blue light-emitting substrate 210 is electrically connected to the first electrode 131.

[0156] Specifically, the blue light-emitting substrate 210 includes an intrinsic gallium nitride layer, an n-type gallium nitride layer, a multiple quantum well layer, and a p-type gallium nitride layer stacked together. Thus, by electrically connecting the blue light-emitting substrate 210 to the first electrode 131, blue light display can be achieved or an excitation light source can be provided for the color conversion layer above.

[0157] A dielectric layer 220 is formed on the side of the blue light-emitting substrate 210 away from the substrate 100. The dielectric layer 220 has a plurality of pixel openings. The orthogonal projection of the pixel openings on the first surface 101 at least covers the orthogonal projection of the first electrode 131 on the first surface 101.

[0158] Optionally, in this embodiment, the material of the dielectric layer 220 may include monocrystalline silicon, which can be thinned, polished and etched by grinding the blue light-emitting substrate epitaxial layer 221 to form multiple pixel openings.

[0159] Optionally, after the blue light-emitting substrate epitaxial layer 221 is polished, the dielectric layer 220 is 50 μm high in the direction perpendicular to the first surface 101 of the substrate 100 and 20 μm wide in the direction parallel to the first surface 101 of the substrate 100.

[0160] A second electrode 230 is formed on the dielectric layer 220. The second electrode 230 covers the side of the dielectric layer 220 away from the substrate 100, the side of the dielectric layer 220 facing each pixel opening, and at least a portion of the blue light-emitting substrate 210 of the pixel opening away from the substrate 100. Specifically, the second electrode 230 includes a third, fourth, and fifth portion interconnected. The third portion is located on the side of the dielectric layer 220 away from the substrate 100, the fourth portion is located on the side of the dielectric layer 220 facing each pixel opening, and the fifth portion is located at the pixel opening and on the side of the blue light-emitting substrate 210 away from the substrate 100, and is in contact with the blue light-emitting substrate 210. This ensures that the second electrode 230 and the blue light-emitting substrate 210 can form a large-area, low-resistance ohmic contact, and that the fifth portion provides a reliable common cathode connection for multiple light-emitting units.

[0161] An insulating layer 240 is formed on the side of the second electrode 230 away from the substrate 100, covering the second electrode 230.

[0162] Optionally, a second electrode 230 and an insulating layer 240 are sequentially deposited on the side of the dielectric layer 220 away from the substrate 100 by physical vapor deposition. The materials of the second electrode 230 and the insulating layer 240 can be aluminum and silicon dioxide, respectively. In addition, an adhesion layer can be deposited between the dielectric layer 220 and the second electrode 230. The material of the adhesion layer can include titanium. Titanium as an adhesion layer can enhance the adhesion between the second electrode 230 and the substrate. Finally, the desired structure of the second electrode 230 and the insulating layer 240 is formed on one side of the dielectric layer 220 by photolithography and etching processes.

[0163] Optionally, when forming the stacked second electrode 230 and insulating layer 240 on the dielectric layer 220, a full layer of metal material for the second electrode can be formed on the dielectric layer 220 first, and then the full layer of metal material for the second electrode can be etched to form the second electrode 230 with an opening; then a full layer of insulating material can be formed on the second electrode 230, and then the full layer of insulating material can be etched to form the insulating layer 240 with an opening. Alternatively, a full layer of metal material for the second electrode can be formed on the dielectric layer 220 first, and then a full layer of insulating material can be formed on the full layer of metal material for the second electrode, and then the full layer of insulating material and the full layer of metal material for the second electrode can be etched sequentially to form the stacked second electrode 230 and insulating layer 240.

[0164] A light-transmitting material and / or at least one color quantum dot conversion material are disposed within the pixel opening.

[0165] Specifically, a slot coating process can be used to fill the corresponding pixel opening with a mixture of green or red quantum dot conversion material and photoresist, followed by UV curing to form a patterned color conversion layer. For blue sub-pixels, high-transmittance silicon-based resin can be directly filled to achieve blue emission.

[0166] In one possible implementation, the step of ion implantation to form the first portion 121 using the first metal shielding layer 191 as a mask can be performed by using the first metal shielding layer 191 as a mask, with the direction perpendicular to the first surface 101 as a baseline, and ion implantation at a first angle α to form the first portion 121.

[0167] Thus, by tilting the implantation, the abnormal penetration of ions along the lattice channels of the silicon substrate 100 can be effectively suppressed, ensuring that the doped ions form a uniform distribution within the predetermined depth, while avoiding the loss of control over the junction depth due to the crystal orientation effect, thereby improving the isolation reliability of the first part 121.

[0168] The step of ion implantation to form the second part 121 using the second metal shielding layer 193 as a mask can be performed by using the second metal shielding layer 193 as a mask, with the direction perpendicular to the first surface 101 as the baseline, and ion implantation at a second angle β to form the second part 121.

[0169] Thus, the bi-directional symmetrical tilting injection allows the first part 121 and the second part 121 to form a cross-overlapping three-dimensional isolation structure 120 inside the substrate 100, which improves the blocking capability of the PN junction isolation.

[0170] Optionally, the first angle α includes 5° to 7°.

[0171] In this embodiment, an angle range of 5° to 7° can balance the implantation efficiency and the channel effect suppression effect. If the first angle α is too small, the lattice channel cannot be sufficiently destroyed, and abnormal penetration may occur; if the first angle α is too large, it may lead to increased scattering loss of implanted ions.

[0172] Optionally, the second angle β includes -5° to -7°.

[0173] In this embodiment, the second angle β, which is symmetrical to the first angle α, can ensure that the ion implantation of the second surface 102 and the ion implantation of the first surface 101 form a symmetrical complementary doping structure, thereby enabling the isolation structure 120 to form a closed carrier blocking ring in the substrate 100, thereby improving the isolation capability of the isolation structure 120.

[0174] Based on the same inventive concept, this application also provides an electronic device, which includes the display panel 10 of any of the foregoing claims, or the electronic device includes the display panel 10 manufactured by the manufacturing method of any of the foregoing claims. Since the aforementioned display panel 10 further reduces the spacing between light-emitting devices by electrically connecting the two ends of the first electrode 131 located within the substrate 100 to the display functional layer 200 and the driving circuit 300 respectively, the overall heat dissipation performance of the display panel 10 is improved; the isolation structure 120 also achieves insulation isolation between adjacent first electrodes 131; thereby improving the reliability and lifespan of the display panel 10, and thus enhancing the market competitiveness of this electronic device.

[0175] In summary, this application provides a display panel 10 and a method for manufacturing the same. The display panel 10 includes a substrate 100; the substrate 100 includes a first surface 101 and a second surface 102 disposed opposite to each other; a first electrode 131 disposed within the substrate 100 and penetrating the first surface 101 and the second surface 102 of the substrate 100, wherein the material of the first electrode 131 includes a conductive material; an isolation structure 120 located within the substrate 100 for achieving insulation isolation between adjacent first electrodes 131; a display functional layer 200 located on one side of the substrate 100; a driving circuit 300 located on the side of the substrate 100 away from the display functional layer 200; and the driving circuit 300 and the display functional layer 200 are electrically connected via the first electrode 131. This application further reduces the spacing between the light-emitting devices of the display panel 10 by connecting the two ends of the first electrode 131 located in the substrate 100 to the display functional layer 200 and the driving circuit 300, respectively, thereby improving the overall heat dissipation performance of the display panel 10. In addition, the isolation structure 120 enables insulation isolation between adjacent first electrodes 131, thereby improving the reliability and lifespan of the display panel 10.

[0176] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0177] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A display panel, characterized in that, The display panel includes: Substrate, the substrate including a first surface and a second surface disposed opposite to each other; A first electrode is disposed within the substrate and extends through a first surface and a second surface of the substrate, wherein the material of the first electrode includes a conductive material; The substrate includes an isolation structure for achieving insulating isolation between adjacent first electrodes; A display functional layer is located on one side of the substrate; wherein the display functional layer is electrically connected to each of the first electrodes; A driving circuit located on the side of the substrate away from the display functional layer; wherein the driving circuit is electrically connected to each of the first electrodes.

2. The display panel according to claim 1, characterized in that, The substrate further includes spaced-apart main body portions, the isolation structure is located between adjacent main body portions, and the first electrode is located within and penetrates the main body portion.

3. The display panel according to claim 2, characterized in that, The material of the main body includes a first type semiconductor material, and the material of the isolation structure includes the first type semiconductor material and a second type semiconductor material doped into the first type semiconductor material. A PN junction is formed between the main body and the isolation structure.

4. The display panel according to claim 3, characterized in that, The display panel further includes a protective layer located between the first surface of the substrate and the display functional layer; The protective layer includes a first region, a second region, and a third region; The orthographic projection of the first region onto the first surface covers the orthographic projection of the first electrode onto the first surface, wherein the material of the first region includes a conductive material; The orthographic projection of the second region onto the first surface covers the orthographic projection of the isolation structure onto the first surface; The orthographic projection of the third region onto the first surface covers the orthographic projection of the main body onto the first surface; Preferably, the material of the first region includes copper; Preferably, the material of the second region comprises hydrogen-containing silicon nitride; Preferably, the material of the third region includes silicon carbonitride.

5. The display panel according to claim 3, characterized in that, The display panel further includes a protective layer located between the first surface of the substrate and the display functional layer; The protective layer exposes the first electrode; the protective layer includes a second region and a third region; The orthographic projection of the second region onto the first surface covers the orthographic projection of the isolation structure onto the first surface; The orthographic projection of the third region onto the first surface covers the orthographic projection of the main body onto the first surface; Preferably, the material of the second region comprises hydrogen-containing silicon nitride; Preferably, the material of the third region includes silicon carbonitride.

6. The display panel according to claim 1, characterized in that, The display function layer includes: A blue light-emitting substrate, wherein the blue light-emitting substrate is electrically connected to the first electrode; A dielectric layer located on the side of the blue light-emitting substrate away from the substrate, the dielectric layer including a plurality of pixel openings exposing the blue light-emitting substrate; wherein, the orthographic projection of each first electrode on the first surface is respectively located within the orthographic projection of each pixel opening on the first surface; The second electrode covers the side of the dielectric layer away from the substrate, the side of the dielectric layer facing each of the pixel openings, and at least a portion of the blue light-emitting substrate away from the substrate. An insulating layer covering the second electrode; Transparent materials and / or at least one color quantum dot conversion material are respectively located in different pixel openings.

7. The display panel according to claim 6, characterized in that, The orthographic projection of the isolation structure onto the first surface forms a first grid structure; the orthographic projection of the dielectric layer onto the first surface forms a second grid structure; the first grid structure and the second grid structure at least partially overlap. Preferably, the orthographic projection of the first electrode on the first surface lies within the mesh openings of the first grid structure.

8. The display panel according to claim 6, characterized in that, The pixel opening includes a first pixel opening, a second pixel opening, and a third pixel opening; The first pixel opening contains a colorless or blue transparent material, the second pixel opening contains a red quantum conversion material, and the third pixel opening contains a green quantum dot conversion material.

9. The display panel according to claim 1, characterized in that, The isolation structure includes a fourth portion extending from the first surface to the second surface and a fifth portion extending from the second surface to the first surface. The fourth portion and the fifth portion intersect inside the substrate. The extension direction of the fourth portion forms a first angle with the direction perpendicular to the first surface, and the extension direction of the fifth portion forms a second angle with the direction perpendicular to the second surface. The absolute values ​​of both the first angle and the second angle are greater than 0°.

10. A method for manufacturing a display panel, characterized in that, The method includes: A substrate is provided; the substrate has opposing first and second surfaces; First electrodes spaced apart and isolation structures located between adjacent first electrodes are formed within the substrate; wherein the material of the first electrodes includes a conductive material, and the isolation structures are used to achieve insulating isolation between adjacent first electrodes; A display functional layer electrically connected to the first electrode is formed on one side of the substrate; A drive circuit electrically connected to the first electrode is formed on the side of the substrate away from the display functional layer.

11. The method for manufacturing a display panel according to claim 10, characterized in that, The steps for forming the isolation structure include: Ion implantation is performed on a portion of the substrate to form an isolation structure and a main body portion separated by the isolation structure; wherein the isolation structure is located between adjacent main body portions.

12. The method for manufacturing a display panel according to claim 11, characterized in that, The steps for forming the isolation structure include: A first metal shielding layer is formed on a first surface of the substrate, the first metal shielding layer having a first opening that isolates the structure injection region; Using the first metal shielding layer as a mask, ion implantation is performed to form the first part; Remove the first metal shielding layer; A second metal shielding layer is formed on the second surface of the substrate. The second metal shielding layer has a second opening that isolates the structure injection region. The orthographic projection of the second opening on the first surface and the orthographic projection of the corresponding first opening on the first surface at least partially overlap. Using the second metal shielding layer as a mask, ion implantation is performed to form a second portion; wherein the first portion and the second portion intersect inside the substrate; Remove the second metal shielding layer.

13. The method for manufacturing a display panel according to claim 11, characterized in that, After the step of forming spaced-apart first electrodes and isolation structures located between adjacent first electrodes within the substrate, the method further includes: A protective layer is deposited on the first surface of the substrate, wherein the protective layer includes a first region, a second region, and a third region; wherein the orthographic projection of the first region on the first surface covers the orthographic projection of the first electrode on the first surface, and the material of the first region includes a conductive material; the orthographic projection of the second region on the first surface covers the orthographic projection of the isolation structure on the first surface; and the orthographic projection of the third region on the first surface covers the orthographic projection of the main body portion on the first surface.

14. The method for manufacturing a display panel according to claim 11, characterized in that, When performing the step of forming spaced-apart first electrodes in the substrate and an isolation structure located between adjacent first electrodes, the method further includes: A protective layer is deposited on the first surface of the substrate, wherein the protective layer exposes the first electrode, and the protective layer includes a second region and a third region; wherein the orthographic projection of the second region on the first surface covers the orthographic projection of the isolation structure on the first surface; and the orthographic projection of the third region on the first surface covers the orthographic projection of the main body portion on the first surface.

15. The method for manufacturing a display panel according to claim 13, characterized in that, The material of the second region includes hydrogen-containing silicon nitride; After performing the step of depositing a protective layer on the first surface of the substrate, the method further includes: The display panel is baked and annealed to allow hydrogen ions from the second region to penetrate the isolation structure and repair the lattice.

16. The method for manufacturing a display panel according to claim 10, characterized in that, The step of providing a display functional layer electrically connected to the first electrode on the first surface includes: A blue light-emitting substrate is covered on the substrate so that the blue light-emitting substrate is electrically connected to the first electrode; A dielectric layer is formed on the side of the blue light-emitting substrate away from the substrate, the dielectric layer having a plurality of pixel openings; wherein the orthographic projection of the pixel openings on the first surface at least covers the orthographic projection of the first electrode on the first surface; A second electrode is formed on the dielectric layer; wherein the second electrode covers the side of the dielectric layer away from the substrate, the side of the dielectric layer facing each of the pixel openings, and at least a portion of the blue light-emitting substrate away from the substrate. An insulating layer is formed on the side of the second electrode away from the substrate, covering the second electrode; A light-transmitting material and / or at least one color quantum dot conversion material are disposed within the pixel opening.

17. The method for manufacturing a display panel according to claim 12, characterized in that, The step of using the first metal shielding layer as a mask to perform ion implantation to form the first part includes: Using the first metal shielding layer as a mask, and with the direction perpendicular to the first surface as a baseline, ion implantation is performed at a first angle to form the first part; The step of using the second metal shielding layer as a mask to perform ion implantation to form the second part includes: Using the second metal shielding layer as a mask, and with the direction perpendicular to the first surface as a baseline, ion implantation is performed at a second angle to form the second part; Preferably, the first angle includes 5° to 7°; Preferably, the second angle includes -5° to -7°.

18. An electronic device, characterized in that, The electronic device includes a display panel as described in any one of claims 1-9, or the electronic device includes a display panel manufactured by the display panel manufacturing method as described in any one of claims 10-17.

Images