Grounding device and semiconductor process equipment

Abstract

The invention provides a grounding device and semiconductor process equipment. The grounding device comprises a grounding ring, a voltage measuring assembly, a supporting assembly and a control assembly. The grounding ring is grounded. The supporting assembly comprises an elastic piece and a driving piece, and the elastic piece is located between the driving piece and the grounding ring; the driving piece is connected to the elastic piece so as to change the deformation quantity of the elastic piece; the pressure measuring assembly is connected to the driving piece and used for measuring the actual pressure applied to the elastic piece by the driving piece; the control assembly is connected to the pressure measuring assembly and the driving piece and used for controlling the driving piece to change the deformation amount of the elastic piece when the value of the actual pressure exceeds the preset range so that the grounding ring can be electrically connected with the upper electrode structure located above the grounding ring, and then the service life of the supporting assembly is prolonged.

Description

Technical Field

[0001] The embodiments disclosed herein relate to, but are not limited to, the semiconductor field, and more specifically, to a grounding device and semiconductor process equipment. Background Technology

[0002] With the continuous growth of demand in the semiconductor memory market, memory density continues to develop rapidly in line with Moore's Law. The shift from two-dimensional to three-dimensional memory stacking places higher demands on high aspect ratio (HARC) equipment, especially capacitively coupled plasma (CCP) etching equipment. To continuously improve selectivity, CCP etching machines are constantly evolving towards higher power, placing increasingly stringent requirements on the mechanical design of the chambers. The conduction and stability of the RF circuits are therefore particularly critical.

[0003] The radio frequency (RF) circuit is a crucial component of the HARC CCP etching machine. The RF circuit typically includes an upper electrode, a grounding ring, and an induction coil. In related technologies, a spring is usually placed below the grounding ring to utilize the elastic force generated by the spring's compression deformation to ensure sufficient contact between the induction coil and the upper electrode and the grounding ring, thereby enabling the RF circuit to conduct.

[0004] However, the elastic force generated by the spring will gradually decrease over time, resulting in insufficient contact between the upper electrode and the grounding ring.

[0005] There are two drawbacks:

[0006] (1) It affects the uniformity of plasma;

[0007] (2) It may cause chamber arcing (abnormal discharge), requiring the replacement of arcing components, which will cause huge losses to actual production. Summary of the Invention

[0008] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a grounding device and semiconductor process equipment, which enables the grounding ring and the upper electrode structure to maintain an electrical connection, thereby ensuring good conduction and stability of the radio frequency circuit in the semiconductor process equipment.

[0009] To achieve the objectives of this invention, a grounding device for semiconductor process equipment is provided. The grounding device includes a grounding ring, a pressure measuring component, a support component, and a control component. The grounding ring is grounded. The support component includes an elastic element and a driving element, with the elastic element located between the driving element and the grounding ring. The driving element is connected to the elastic element to change the deformation of the elastic element. The pressure measuring component is connected to the driving element to measure the actual pressure applied by the driving element to the elastic element. The control component is connected to the pressure measuring component and the driving element to control the driving element to change the deformation of the elastic element when the actual pressure value exceeds a preset range, so that the grounding ring can maintain an electrical connection with the upper electrode structure located above the grounding ring.

[0010] In some embodiments, the support assembly further includes a first push plate, and the drive member is connected to the elastic member through the first push plate. The drive member is used to drive the first push plate to move in a direction closer to or away from the grounding ring, thereby increasing or decreasing the pressure applied by the drive member to the elastic member.

[0011] In some embodiments, the support assembly further includes a support rod and a buffer member, both of which are disposed on the support rod. The support rod includes a rod body extending along the deformation direction of the elastic member and an annular plate disposed circumferentially on the rod body. The rod body is in contact with a grounding ring. The buffer member and the elastic member are respectively located on both sides of the annular plate. The buffer member is capable of providing a second force to the annular plate in the opposite direction to the first force when the elastic member applies a first force to the annular plate.

[0012] In some embodiments, the grounding device further includes a housing having a receiving space, wherein the annular plate, the elastic element, and the buffer are all located in the receiving space; the buffer includes a sliding baffle, the sliding baffle having a first surface, a second surface, and a circumferential side surface, the first surface and the second surface being disposed opposite to each other and the first surface facing the grounding ring, the circumferential side surface being used to connect the first surface and the second surface; the circumferential side surface abuts against the inner wall surface of the housing so that the sliding baffle can slide along the inner wall surface of the housing, the elastic element being sleeved on the rod, and the elastic element and the sliding baffle being respectively disposed on both sides of the annular plate.

[0013] In some embodiments, the buffer further includes a buffer spring and a fixed baffle. The fixed baffle is disposed on the side of the sliding baffle away from the elastic member, and the two ends of the buffer spring along its elastic direction abut against the fixed baffle and the sliding baffle respectively. The fixed baffle is fixedly disposed on the inner wall surface of the housing.

[0014] In some embodiments, the elastic coefficient of the elastic element is greater than that of the buffer spring.

[0015] In some embodiments, the pressure measuring component is disposed on the bottom surface of the fixed end of the drive member.

[0016] In some embodiments, the control component includes a controller that stores a preset range configured to be greater than or equal to 98% of the target pressure value.

[0017] To achieve the purpose of this invention, a semiconductor process apparatus is also provided, including a process chamber and a base, an upper electrode structure, and the aforementioned grounding device located within the process chamber; the grounding ring is located above the base and is in contact with the base for electrical conduction.

[0018] In some embodiments, the support assembly includes a plurality of evenly spaced support rods, each of which extends through the base and contacts the grounding ring.

[0019] The present invention has the following beneficial effects:

[0020] In this embodiment of the grounding device, the driving component can apply a variable pressure to the elastic component to change the deformation of the elastic component, so that the support assembly can provide a variable elastic pressure to the grounding ring. Simultaneously, the pressure applied to the elastic component by the driving component is monitored using a pressure measuring component and a control component, enabling the support assembly to continue providing elastic pressure to the grounding ring that allows electrical connection between the grounding ring and the upper electrode structure even when the elastic component decays. Compared to related technologies where the spring must be replaced after spring decay, the support assembly in this embodiment has a longer service life and avoids interrupting the semiconductor process.

[0021] The semiconductor process equipment in this application embodiment enables the grounding ring to be electrically connected to the upper electrode structure, thereby maintaining good conduction and stability of the radio frequency circuit, effectively controlling the generation and maintenance of plasma, thus achieving a stable and precise etching process and ensuring the uniformity of plasma.

[0022] Other objects and features of the present invention will become clear from reading the specification, claims and drawings of this application. Attached Figure Description

[0023] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0024] Figure 1 This is a structural schematic diagram of an etching machine used in implementing related technologies.

[0025] Figure 2 This is a partially enlarged view of an etching machine used in the implementation of related technologies.

[0026] Figure 3 This is a diagram of the radio frequency circuit module of an etching machine, which is an implementation of related technologies.

[0027] Figure 4 This is a partially enlarged view of the semiconductor process equipment according to an embodiment of the present invention.

[0028] Figure 5 This is a structural schematic diagram of the grounding device according to an embodiment of the present invention.

[0029] Figure 6 This is a structural schematic diagram of the semiconductor process equipment according to an embodiment of the present invention.

[0030] Figure 7 This is a top view of the base of the semiconductor process equipment according to an embodiment of the present invention.

[0031] Figure 8 The silicon dioxide etching results of the semiconductor process equipment in the embodiments of the present invention are eccentric etching results in different processes.

[0032] Explanation of key component symbols:

[0033] 1. Etching machine; 2. Upper electrode; 3. Induction coil; 4. Grounding ring; 5. Lower electrode base; 6. Spring; 7. Support device;

[0034] 100. Grounding ring;

[0035] 200. Pressure testing components;

[0036] 300, Support assembly; 310, Elastic element; 320, Driving element; 321, Output shaft; 330, First push plate; 340, Support rod; 341, Rod body; 342, Annular plate; 350, Buffer element;

[0037] 351. Sliding baffle; 352. Buffer spring; 353. Fixed baffle;

[0038] 400. Casing;

[0039] 20. Conductive connector; 30. Base; 31. Through hole; 40. Upper electrode structure; 41. Upper electrode body; 42. Upper electrode cover. Detailed Implementation

[0040] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0041] High aspect ratio contact capacitively coupled plasma (HARC CCP) etching is a specialized etching technique for fabricating micro and nanostructures, commonly used in semiconductor processes. It typically employs capacitively coupled plasma (CCP) technology to etch very fine structures with relatively large depths onto silicon wafers. The HARC CCP etching machine 1, capable of performing HARC CCP, includes an upper electrode 2, an induction coil 3, a grounding ring 4, a lower electrode base 5, a spring 6, and a support device 7. For detailed structure information, please refer to [reference needed]. Figure 1 and Figure 2 The RF circuit of the HARC-CCP etching machine 1 includes the lower electrode base 5, power matching unit, RF power supply, lower electrode, plasma, upper electrode 2, induction coil 3, and grounding ring 4. For details, please refer to [link to relevant documentation]. Figure 3 .

[0042] However, prolonged stress on spring 6 may lead to fatigue, causing microcracks and deformation in its material structure, thus affecting its elastic properties and restoring force. In addition, spring 6 may experience stress relaxation or creep, meaning that under continuous stress, the material gradually undergoes irreversible plastic deformation, altering its original shape and affecting its elastic recovery performance. These factors cause spring 6 to experience deformation and stress relaxation during use, altering its elastic properties and ultimately causing its elastic force to decrease over time. The continuous reduction in the elastic force provided by spring 6 to the grounding ring 4 may prevent sufficient contact with the upper electrode 2, resulting in unstable or insufficient conduction of the RF circuit, or even disconnection, causing plasma instability and uneven etching rates, all of which affect plasma uniformity. Furthermore, unstable or insufficient conduction of the RF circuit can lead to chamber arcing (abnormal discharge).

[0043] In related technologies, the spring 6 can only be adjusted and replaced by opening the cavity (hereinafter referred to as opening the cavity). However, opening the cavity will prolong the silicon wafer preparation process and cause huge losses to actual production.

[0044] To address the aforementioned technical problems, this application proposes a grounding device for semiconductor process equipment. The grounding device includes a grounding ring 100, a pressure measuring component 200, a support component 300, and a control component. The grounding ring 100 is grounded. The support component 300, the pressure measuring component 200, and the control component work together to controllable elastic pressure on the grounding ring 100. When the elastic pressure on the grounding ring 100 decreases to the point where the RF circuit cannot conduct normally, the support component 300, the pressure measuring component 200, and the control component can work together to increase the elastic pressure applied to the grounding ring 100, ensuring that the grounding ring 100 maintains electrical connection with the upper electrode structure 40.

[0045] To better explain this embodiment, the following description is provided in conjunction with the accompanying drawings. It should be noted that the structures in the drawings are merely illustrative and do not impose specific limitations on the structures in this embodiment. Other structures derived from these drawings are also within the scope of protection of this invention.

[0046] In this embodiment, the support component 300 includes an elastic element 310 and a driving element 320. The elastic element 310 is located between the driving element 320 and the grounding ring 100. The driving element 320 is connected to the elastic element 310 to change the deformation of the elastic element 310. The pressure measuring component 200 is connected to the driving element 320 and is used to measure the actual pressure applied by the driving element 320 to the elastic element 310. For details, please refer to [reference needed]. Figure 4 and Figure 5 .

[0047] The control component is connected to the pressure measuring component 200 and the drive component 320. The control component is used to control the drive component 320 to change the deformation of the elastic element 310 when the actual pressure value exceeds the preset range, so that the grounding ring 100 can maintain an electrical connection with the upper electrode structure 40 located above the grounding ring 100.

[0048] In semiconductor process equipment, the radio frequency (RF) circuit typically consists of multiple components. In this embodiment, it may include an upper electrode structure 40 and a ground ring 100. The upper electrode structure 40 and the ground ring 100 are typically made of metal or other conductive materials. Sufficient contact between the ground ring 100 and the upper electrode structure 40 in the RF circuit ensures efficient RF power transmission and improves plasma stability and uniformity. Insufficient contact may hinder RF power transmission, leading to plasma instability and non-uniformity in the etching process.

[0049] In an optional embodiment, the grounding ring 100 is connected to a ground wire to achieve a grounding configuration. In semiconductor process equipment, particularly in equipment involving high-frequency radio frequency (RF) power and plasma discharge, such as plasma etching equipment (e.g., CCP etching machines), the grounding configuration of the grounding ring 100 can be used to ensure that charges in the equipment can safely flow back to ground, thereby protecting the equipment and operators from electrostatic discharge and electric shock. Furthermore, the grounding ring 100 can be electrically connected to the upper electrode structure 40, thereby forming a closed loop of the RF circuit when the grounding ring 100 is electrically connected to the upper electrode structure 40, stabilizing the transmission of RF power and ensuring plasma uniformity.

[0050] Optionally, the grounding ring 100 can be connected to the upper electrode structure 40 via a conductive connector 20. The conductive connector 20 can be a coil structure or other structures capable of achieving conductive connection.

[0051] In an optional embodiment, the elastic element 310 may include a spring, an elastic washer, an elastic gasket, an elastic nut, or other material structure that is both elastic and conductive. Specifically, when the elastic element 310 is a spring, the spring constant may be 10–50 N / mm.

[0052] In this embodiment of the grounding device, the driving member 320 can apply a variable pressure to the elastic member 310 to change the deformation of the elastic member 310, so that the support component 300 can provide a variable elastic pressure to the grounding ring 100. Simultaneously, the pressure applied to the elastic member 310 by the pressure measuring component 200 and the control component are monitored, so that the support component 300 can still provide the grounding ring 100 with elastic pressure that allows the grounding ring 100 to be electrically connected to the upper electrode structure 40 even when the elastic member 310 decays. Compared to related technologies where the spring 6 can only be replaced by opening the cavity when it decays, the grounding device in this embodiment has a longer service life and can also avoid interrupting the semiconductor process.

[0053] In an optional embodiment, the support assembly 300 further includes a first push plate 330. A drive member 320 is connected to the elastic member 310 via the first push plate 330. The drive member 320 drives the first push plate 330 to move in a direction closer to or further away from the grounding ring 100, thereby increasing or decreasing the pressure applied by the drive member 320 to the elastic member 310. See also Figure 4 The driving component 320 and the elastic component 310 are located on both sides of the first push plate 330, wherein the elastic component 310 can be fixed to the first push plate 330 to improve stability.

[0054] It should be noted that Hooke's Law states: F = kx, where F is the spring force, k is the spring constant, and x is the deformation. According to Hooke's Law, the greater the deformation of the spring, the greater the spring force. Therefore, the driving component 320 can be used to drive the first push plate 330 to move up or down along the deformation direction of the elastic component 310, thereby increasing or decreasing the second elastic pressure.

[0055] In one specific embodiment, the driving component 320 may include a motor. The output shaft 321 of the motor is connected to the first push plate 330 to drive the first push plate 330 to move up and down in the vertical direction. Optionally, the diameter of the motor may be 30 to 60 mm, and the longitudinal stroke may be -30 to 30 mm.

[0056] In an optional embodiment, the motor has a memory function, meaning it can store and reproduce a specific position. The motor can use devices such as encoders or position sensors to detect the current position of the first push plate 330. These sensors can also measure the position of the motor rotor or load and feed the position information back to the control component. During motor operation, the control component can store the current position information in its internal memory. These stored positions can be user-defined or dynamically learned during operation. When the same position needs to be re-run, the control component can retrieve the previously stored position information from the memory and command the motor drive output shaft 321 to move, thereby moving the first push plate 330. In this way, the motor can reproduce the previously stored position of the first push plate 330. Throughout the process, the control component typically employs closed-loop control to achieve precise control of the position of the first push plate 330. In one specific embodiment, the motor can store the current position information of the first push plate 330 before power is cut off. After power is restored, the control component can retrieve this stored position information and attempt to move the first push plate 330 to the longitudinal stroke before the power failure.

[0057] Understandably, when the pressure measuring component 200 is used to measure the actual pressure applied by the drive member 320 to the elastic member 310, the pressure measuring component 200 can be configured to display the actual pressure on a display component (e.g., a display screen), making the actual pressure visible. The control device can employ automatic or manual control to adjust the driving force provided by the drive member 320 according to the actual pressure.

[0058] There are at least two implementations regarding the relative positional relationship between the pressure measuring component 200, the driving component 320, and the elastic component 310.

[0059] In the first embodiment, the driving member 320 is located between the elastic member 310 and the pressure measuring component 200. Specifically, the pressure measuring component 200 is disposed on the bottom surface of the fixed end of the driving member 320. It can be understood that the fixed end of the driving member 320 refers to the end away from the first push plate 330.

[0060] In the second embodiment, the pressure measuring component 200 is disposed between the driving member 320 and the elastic member 310. Specifically, the pressure measuring component 200 is disposed between the first push plate 330 and the elastic member 310.

[0061] In an optional embodiment, the support assembly 300 further includes a support rod 340 and a buffer 350. Both the buffer 350 and the elastic member 310 are disposed on the support rod 340. The support rod 340 includes a rod body 341 and an annular plate 342, with the rod body 341 extending along the deformation direction of the elastic member 310. The annular plate 342 is disposed circumferentially on the rod body 341. The rod body 341 contacts the grounding ring 100. The buffer 350 and the elastic member 310 are located on opposite sides of the annular plate 342. When the elastic member 310 applies a first force to the annular plate 342, the buffer 350 provides a second force to the annular plate 342 in the opposite direction to the first force, thereby slowing down the vertical movement of the rod body 341 and preventing the grounding ring 100 from moving a large distance upwards in a short time and colliding with the upper electrode structure 40.

[0062] In an optional embodiment, the grounding device further includes a housing 400, which forms a receiving space. An annular plate 342, an elastic element 310, and a buffer element 350 are all located within the receiving space. The buffer element 350 includes a sliding baffle 351. The sliding baffle 351 includes a first surface, a second surface, and a circumferential side surface. The first surface and the second surface are disposed opposite to each other, with the first surface facing the grounding ring 100. The circumferential side surface connects the first surface and the second surface. The circumferential side surface abuts against the inner wall surface of the housing 400, allowing the sliding baffle 351 to slide along the inner wall surface of the housing 400. The elastic element 310 is sleeved on the rod 341, and the elastic element 310 and the sliding baffle 351 are respectively disposed on both sides of the annular plate 342. In this embodiment, the frictional force between the sliding baffle 351 and the inner wall surface of the housing 400 acts as a second force.

[0063] Specifically, the housing 400 includes a base plate located below the drive member 320. The pressure measuring assembly 200 includes a pressure sensor located between the base plate and the drive member 320. The lower surface of the pressure sensor is in close contact with the upper surface of the base plate, and the upper surface of the pressure sensor is in close contact with the bottom surface of the motor. Preferably, the diameter of the pressure sensor is 30–60 mm, and the measuring range is 0–1000 N.

[0064] In an optional embodiment, the buffer 350 further includes a buffer spring 352 and a fixed baffle 353. The fixed baffle 353 is disposed on the side of the sliding baffle 351 opposite to the elastic member 310, and the two ends of the buffer spring 352 along its elastic direction abut against the fixed baffle 353 and the sliding baffle 351, respectively. The fixed baffle 353 is fixedly disposed on the inner wall surface of the housing 400.

[0065] Specifically, the elastic coefficient of the elastic element 310 is greater than that of the buffer spring 352, so as to prevent the elastic element 310 from changing the elastic pressure it provides to the grounding ring 100 in a short period of time, causing the grounding ring 100 to be impacted.

[0066] The control component includes a controller. The controller stores a preset range, which is configured to be greater than or equal to 98% of the target pressure value. For example, if the target pressure value is 100N, the controller will control the drive member 320 to push the first push plate 330 upward when the actual pressure value is less than 98N, thereby increasing the deformation of the elastic member.

[0067] The process results were verified using a HARC CCP etching machine; for details, please refer to [link / reference]. Figure 8 After the cavity was closed, the longitudinal travel of the motor was adjusted until the pressure sensor readings in all three directions were 100.0 N. When the RF time was 190 h, the pressure sensor reading at the two o'clock position was 97.8 N (the deviation was greater than 2%, i.e., (100 - 97.8 = 2.2) > (100 × 2% = 2)). At this time, the eccentricity data of process A was collected. Then, the longitudinal travel of the motor in all three directions was adjusted until the pressure sensor readings were 100.0 N. The eccentricity data of process A was collected again. After adjusting the motor travel, the etching range (extreme value) in the etching eccentricity diagram was significantly reduced compared to before the adjustment (Range from Down to This demonstrates that semiconductor process equipment employing the grounding device of the embodiments of this application can improve plasma uniformity to a certain extent.

[0068] This application also provides a semiconductor process apparatus, which includes a process chamber, a base 30, an upper electrode structure 40, and a grounding device. The base 30, the upper electrode structure 40, and the grounding device are located within the process chamber, as detailed below. Figure 6 and Figure 7 The grounding ring 100 is located above the base 30 and is in contact with the base 30, thus conducting electricity.

[0069] The existing technology's process equipment cannot monitor the elastic pressure on the grounding ring, and the spring force generated by the spring will continuously decrease over time, resulting in insufficient contact between the grounding ring and the upper electrode. However, the embodiments of this application provide a method for monitoring and controlling the contact between the upper electrode structure 40 and the grounding ring 100 without opening a cavity by adding a driving component 320 and a pressure sensor under the support rod 340. This ensures sufficient contact between the upper electrode structure 40 and the grounding ring 100, thereby maintaining the uniformity of plasma in the process chamber, avoiding abnormal discharge caused by insufficient grounding of the process chamber, and improving production efficiency.

[0070] Semiconductor process equipment can be a HARC CCP etching machine, a specialized etching device used to fabricate micro and nanostructures. To implement its process methods, a HARC CCP etching machine typically includes a base 30, a gas supply system, and a vacuum system. The base 30 has through-holes 31 for support rods 340 to pass through. A support device is used to hold the wafer. The gas supply system supplies etching gases to the process chamber; the gases typically include etching gases (e.g., fluorinated gases) and carrier gases (e.g., argon), the ratio and flow rate of which can be adjusted according to process requirements. The process chamber needs to operate in a low-pressure or vacuum environment. The vacuum system is used to maintain an appropriate vacuum level within the etching chamber and to remove waste gases generated during the etching process.

[0071] In semiconductor process equipment, radio frequency (RF) power supplies are typically used to activate plasma, thereby enabling etching of the workpiece surface. When the RF power supply is on, it generates a high-frequency electric field that breaks down the gas and generates plasma for etching. Therefore, for safety reasons, the drive unit 320 is set to an open-circuit state when the semiconductor process equipment is powered on to prevent electrical sparks or unnecessary electromagnetic interference during power-on. When the semiconductor process equipment is not powered on, the drive unit 320 can be in a connected state to drive the first push plate 330 to move.

[0072] In an optional embodiment, the grounding ring 100 is configured as a ring-shaped metal component fixed inside the process chamber and can be connected to a ground wire to ensure the electrical grounding of the equipment. In an optional embodiment, the upper electrode structure 40 is used to provide radio frequency (RF) power, which generates a high-frequency electric field through a coil, thereby generating plasma in the etching chamber. In an optional embodiment, the upper electrode structure 40 includes an upper electrode shield 42 and an upper electrode body 41. The upper electrode shield 42 surrounds the upper electrode body 41 to protect it from external environmental influences and ensure its normal and safe operation. The upper electrode shield 42 can be made of a high-temperature resistant and corrosion-resistant material, such as ceramic or a special alloy, to meet specific requirements. In an optional embodiment, the upper electrode shield 42 also has a certain degree of conductivity to ensure good electrical contact with the upper electrode body 41 and the conductive connector 20, ensuring effective closure of the RF loop.

[0073] The support assembly 300 includes a plurality of support rods 340, which are evenly spaced apart. Each support rod 340 passes through the base 30 and contacts the grounding ring 100.

[0074] In some embodiments, the support assembly 300 includes three support rods 340, which are evenly distributed. Specifically, they can be distributed in three directions: two o'clock, six o'clock, and ten o'clock. When the driving component 320 needs to change the deformation of the elastic component 310, the different driving components 320 connected to different support rods 340 can apply the same force to the grounding ring 100 in the three directions, ensuring the uniformity of the plasma in the process chamber and avoiding abnormal discharge caused by insufficient grounding.

[0075] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of the stated features. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0076] In the description of this invention, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0077] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with an embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0078] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A grounding device for semiconductor process equipment, characterized in that, The grounding device includes a grounding ring, a pressure measuring component, a support component, and a control component, wherein the grounding ring is grounded. The support assembly includes an elastic element and a driving element, the elastic element being located between the driving element and the grounding ring; the driving element is connected to the elastic element to change the deformation of the elastic element; The pressure measuring component is connected to the driving member and is used to measure the actual pressure applied by the driving member to the elastic member. The control component is connected to the pressure measuring component and the drive component, and is used to control the drive component to change the deformation of the elastic element when the actual pressure value exceeds the preset range, so that the grounding ring can maintain an electrical connection with the upper electrode structure located above the grounding ring.

2. The grounding device according to claim 1, characterized in that, The support assembly further includes a first push plate, and the driving member is connected to the elastic member through the first push plate. The driving member is used to drive the first push plate to move in a direction closer to or away from the grounding ring, thereby increasing or decreasing the pressure applied by the driving member to the elastic member.

3. The grounding device according to claim 2, characterized in that, The support assembly further includes a support rod and a buffer member, wherein both the buffer member and the elastic member are disposed on the support rod; The support rod includes a rod body extending along the deformation direction of the elastic element and an annular plate disposed around the circumference of the rod body. The rod body is in contact with the grounding ring. The buffer and the elastic element are located on opposite sides of the annular plate. The buffer is capable of providing a second force to the annular plate in the opposite direction to the first force when the elastic element applies a first force to the annular plate.

4. The grounding device according to claim 3, characterized in that, The grounding device further includes a housing with a receiving space, wherein the annular plate, the elastic element, and the buffer element are all located in the receiving space; The buffer includes a sliding baffle, which includes a first surface, a second surface, and a circumferential side surface. The first surface and the second surface are disposed opposite to each other and the first surface faces the grounding ring. The circumferential side surface is used to connect the first surface and the second surface. The circumferential side abuts against the inner wall of the housing so that the sliding baffle can slide along the inner wall of the housing. The elastic element is sleeved on the rod body, and the elastic element and the sliding baffle are respectively disposed on both sides of the annular plate.

5. The grounding device according to claim 4, characterized in that, The buffer also includes a buffer spring and a fixed baffle. The fixed baffle is disposed on the side of the sliding baffle away from the elastic member, and the two ends of the buffer spring along its elastic direction abut against the fixed baffle and the sliding baffle, respectively. The fixed baffle is fixedly installed on the inner wall surface of the housing.

6. The grounding device according to claim 5, characterized in that, The elastic coefficient of the elastic element is greater than that of the buffer spring.

7. The grounding device according to claim 2, characterized in that, The pressure measuring component is disposed on the bottom surface of the fixed end of the driving component.

8. The grounding device according to claim 2, characterized in that, The control component includes a controller that stores the preset range, which is configured to be greater than or equal to 98% of the target pressure value.

9. A semiconductor process apparatus, characterized in that, It includes a process chamber and a base, an upper electrode structure, and a grounding device as described in any one of claims 1 to 8 located within the process chamber; The grounding ring is located above the base and is in contact with the base for electrical conduction.

10. The semiconductor process equipment according to claim 9, characterized in that, The support assembly includes a plurality of evenly spaced support rods, each of which passes through the base and contacts the grounding ring.

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