Plasma source power reflection power control methods, systems and equipment

Abstract

This invention relates to the field of power regulation technology, specifically including a method, system, and device for regulating the power reflection of a plasma source. The method includes: determining a power regulation network; determining first and second sets of coordinated voltage regulation parameters; determining third and fourth sets of coordinated voltage regulation parameters; and, in conjunction with power regulation indicators, online correcting the initial input voltage of the power regulation network to determine an adaptive voltage regulation parameter combination. This invention solves the technical problems of failing to address the regulation imbalance caused by load impedance fluctuations when using fixed parameter strategies for a single reflection power indicator, and the low adaptability of regulation parameters to actual operating conditions. It achieves the technical effect of determining the core components and coupling relationships of the power regulation network, dynamically calling adaptive parameters according to different operating conditions, quickly responding to interference such as grid fluctuations and load changes, improving power output stability, ensuring etching rate, and enhancing the adaptability of regulation parameters to actual operating conditions.

Description

Technical Field

[0001] This invention relates to the field of power regulation technology, specifically to methods, systems, and equipment for regulating the power reflection of plasma sources. Background Technology

[0002] During plasma generation, the load impedance of the reaction chamber is easily affected by process parameters and environmental interference, resulting in dynamic changes. This leads to a mismatch between the plasma source output power and the load impedance, causing power reflection. Excessive power reflection not only reduces power output efficiency but also causes risks such as overheating of internal components and high-frequency interference, damaging core components such as Boost circuits and directional couplers. However, current plasma source power reflection methods mostly rely on preset fixed voltage parameters for regulation, ignoring the secondary impact of load impedance fluctuations on the regulation effect. This results in low adaptability of regulation parameters to actual operating conditions, insufficient reflection power suppression rate, and an inability to effectively avoid equipment risks caused by regulation delays.

[0003] In summary, existing technologies suffer from several problems. They rely solely on fixed parameter strategies for a single indicator of reflected power, which fails to address the imbalance in secondary reflection caused by load impedance fluctuations and results in low adaptability of the control parameters to actual operating conditions. Summary of the Invention

[0004] This application provides a plasma source power reflection power control method, system, and device, aiming to solve the technical problems in the prior art where fixed parameter strategies are only formulated for a single index of reflection power, which cannot solve the problem of control imbalance caused by load impedance fluctuations and low adaptability of control parameters to actual operating conditions.

[0005] In view of the above problems, the technical solution to achieve the present application is as follows:

[0006] In a first aspect, this application provides a method for controlling the reflected power of a plasma source. The method includes: determining a power control network, wherein the core components of the power control network include a Boost circuit, a directional coupler, and a reaction chamber load; determining a first set of coordinated voltage control parameters suitable for when the reflected power exceeds the limit and a second set of coordinated voltage control parameters suitable for when the reflected power is normal, based on the signal coupling relationship between the Boost circuit and the directional coupler; determining a third set of coordinated voltage control parameters suitable for when the load impedance fluctuates and a fourth set of coordinated voltage control parameters suitable for when the load impedance is stable, based on the impedance matching relationship between the Boost circuit and the reaction chamber load; and determining an adaptive voltage control parameter combination by online correction of the initial input voltage of the power control network based on power control indicators and in combination with the first, second, third, and fourth sets of coordinated voltage control parameters.

[0007] Preferably, the directional coupler converts the plasma source output power and reflected power into detectable electrical signals, and the directional coupler converts the input voltage into an adjustable output voltage mode adapted to the plasma source; the directional coupler is used in conjunction with a power comparator to detect power deviation and determine the first and second cooperative voltage control parameter sets; the Boost circuit is used in conjunction with an impedance analyzer to detect load impedance and determine the third and fourth cooperative voltage control parameter sets.

[0008] Preferably, plasma process requirement information is introduced to configure the initial input voltage; environmental interference factors, including grid voltage fluctuations and sudden changes in cavity load impedance, are set; based on the environmental interference factors, the effects of directional coupler detection delay and Boost circuit response hysteresis are analyzed to construct a circuit simulation model of the plasma source power transmission process; based on the circuit simulation model, dynamic simulation verification is performed on the power output corresponding to the initial input voltage to evaluate the power control indicators, including power output efficiency and power output stability.

[0009] Preferably, plasma process parameters including etching rate and thin film deposition thickness are uploaded, and the target output power, allowable reflection power threshold, and cavity working pressure in the process requirement information are analyzed; an initial voltage reference value that conforms to the power transmission characteristics is generated based on the target output power, allowable reflection power threshold, and cavity working pressure in the process requirement information; a gradient adjustment test is performed on the initial voltage reference value to determine the initial input voltage.

[0010] Preferably, the cavity load impedance parameters are embedded in the circuit simulation model to simulate the impedance change during the plasma source power transmission process, and the output power data and reflected power data, voltage adjustment response window period and power stabilization window period corresponding to the initial input voltage are recorded; the power output efficiency in the power control index is evaluated by using the output power data and reflected power data corresponding to the initial input voltage; the power output stability in the power control index is evaluated by using the voltage adjustment response window period and power stabilization window period corresponding to the initial input voltage.

[0011] Preferably, the cavity load impedance parameters are embedded in the circuit simulation model, wherein the cavity load impedance parameters include plasma equivalent resistance, equivalent capacitance, and impedance variation curves with process time; the power transmission link under the Boost circuit-plasma source-reaction cavity load mapping is divided into circuit topologies, and the power reflection coefficient under different impedance states is analyzed; using the power reflection coefficient as a key indicator, the cavity load impedance parameters are loaded onto the power transmission nodes of the circuit simulation model in time intervals to determine the loading strategy of the cavity load impedance parameters.

[0012] Preferably, the first, second, third, and fourth coordinated voltage regulation parameter sets are used as decision variables to analyze their influence weights on the power regulation index. Using these influence weights, a multi-objective optimization index is configured to minimize the voltage adjustment amplitude and maximize the reflection power suppression rate. The decision variables are iteratively updated to determine the optimal correction coefficient and correction timing corresponding to the initial input voltage. Based on the optimal correction coefficient and correction timing, the initial input voltage is dynamically calibrated to output an adaptive voltage regulation parameter combination that satisfies the power regulation index.

[0013] Preferably, the reflected power detection data of the directional coupler is collected in real time to determine the current power reflection loss value; the current power reflection loss value is compared with the allowable reflected power threshold; if it exceeds the allowable reflected power threshold, the trend of power regulation index change under the current voltage regulation parameter combination configuration is predicted; and the trend of power regulation index change is used to determine whether to trigger the online correction mechanism.

[0014] In a second aspect, this application provides a plasma source power reflection power control system, wherein the system comprises: a power control network determination module: determining a power control network, the core components of which include a Boost circuit, a directional coupler, and a reaction chamber load; a signal coupling module: determining a first set of cooperative voltage control parameters suitable when the reflected power exceeds the limit and a second set of cooperative voltage control parameters suitable when the reflected power is normal, based on the signal coupling relationship between the Boost circuit and the directional coupler; an impedance matching module: determining a third set of cooperative voltage control parameters suitable when the load impedance fluctuates and a fourth set of cooperative voltage control parameters suitable when the load impedance is stable, based on the impedance matching relationship between the Boost circuit and the reaction chamber load; and an online correction module: performing online correction on the initial input voltage of the power control network based on power control indicators and in combination with the first, second, third, and fourth sets of cooperative voltage control parameters, to determine an adaptive voltage control parameter combination.

[0015] In a third aspect, the present invention also provides an electronic device, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps in the above-described plasma source power reflection power control method.

[0016] In summary, one or more technical solutions provided in this application achieve the technical effects of determining the core components and coupling relationships of the power regulation network, dynamically calling adaptive parameters according to different operating conditions, quickly responding to disturbances such as grid fluctuations and load changes, improving power output stability, ensuring etching rate, and improving the adaptability of regulation parameters to actual operating conditions. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are merely exemplary. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0018] Figure 1 A flowchart illustrating the plasma source power reflection power control method is provided for this application.

[0019] Figure 2 A schematic diagram of the plasma source power reflection power control system is provided for this application.

[0020] Figure 3 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present invention.

[0021] Explanation of reference numerals in the attached diagram: Power regulation network determination module M100, signal coupling module M200, impedance matching module M300, online correction module M400, bus 300, receiver 301, processor 302, transmitter 303, memory 304, bus interface 305. Detailed Implementation

[0022] The technical solutions of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. It should be understood that this application is not limited to the exemplary embodiments described herein. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application. It should also be noted that, for ease of description, only the parts related to this application are shown in the accompanying drawings, not all of them.

[0023] Example 1: The present application will be described in detail below with reference to the accompanying drawings, as follows... Figure 1 As shown, this application provides a method for controlling the reflected power of a plasma source, wherein the method includes:

[0024] S1: Determine the power regulation network, the core components of which include a Boost circuit, a directional coupler, and a reaction chamber load; S2: Based on the signal coupling relationship between the Boost circuit and the directional coupler, determine the first set of cooperative voltage regulation parameters adapted when the reflected power exceeds the limit and the second set of cooperative voltage regulation parameters adapted when the reflected power is normal.

[0025] Specifically, the power control network is used to control and optimize the transmission and distribution of plasma source power. The core components of the power control network include a Boost circuit, a directional coupler, and a reaction chamber load. These core components achieve efficient power transmission through specific electrical connections and signal interactions. The Boost circuit is a DC-DC converter used to boost the input voltage to meet the high voltage requirements of the plasma source. The Boost circuit plays a crucial role in voltage boosting and stabilization in the power control network. The directional coupler is used to detect and measure the output and reflected power of the plasma source, and can couple out a portion of the power signal for power monitoring and feedback control. The signal coupling relationship refers to the electrical connection and signal interaction method between the Boost circuit and the directional coupler. The signal coupling relationship determines how to obtain signals from the Boost circuit and perform power detection through the directional coupler. The coordinated voltage control parameter set is a set of optimized voltage parameters used to adjust the input voltage of the Boost circuit under different operating conditions, such as excessive or normal reflected power, to achieve optimal power transmission efficiency and stability.

[0026] Execution steps: Determining the core components and coupling relationships of the power control network is fundamental to achieving precise power control. By analyzing the signal coupling relationship between the Boost circuit and the directional coupler, the output power and reflected power of the plasma source are accurately detected. The core components include the Boost circuit, the directional coupler, and the reaction chamber load. When the reflected power exceeds a preset threshold, the input voltage of the Boost circuit is adjusted using a first set of cooperative voltage control parameters to reduce the reflected power and stabilize the output power. When the reflected power is within the normal range, a second set of cooperative voltage control parameters is used to maintain the efficiency and stability of power transmission. Specifically, in the plasma etching process, if the initial input voltage is 100V, when the reflected power is detected to exceed the threshold, the input voltage of the Boost circuit is automatically adjusted to 95V according to the first set of cooperative voltage control parameters to reduce the reflected power. Through dynamic adjustment, the reflection power suppression rate is improved, significantly enhancing power output efficiency and stability, and ensuring etching rate and process quality.

[0027] S3: Based on the impedance matching relationship between the Boost circuit and the load of the reaction chamber, determine the third set of cooperative voltage regulation parameters adapted when the load impedance fluctuates and the fourth set of cooperative voltage regulation parameters adapted when the load impedance is stable; S4: Based on the power regulation index, combine the first set of cooperative voltage regulation parameters, the second set of cooperative voltage regulation parameters, the third set of cooperative voltage regulation parameters, and the fourth set of cooperative voltage regulation parameters to perform online correction on the initial input voltage of the power regulation network, and determine the adaptive voltage regulation parameter combination.

[0028] Specifically, impedance matching refers to the degree of matching between the output impedance of the Boost circuit and the input impedance of the reaction chamber load. Good impedance matching can maximize power transfer efficiency and reduce reflected power. Load impedance fluctuation refers to the change in the impedance of the reaction chamber load during the process due to various factors such as changes in gas pressure and plasma density. Load impedance fluctuation affects the stability and efficiency of power transfer. The third set of cooperative voltage regulation parameters is a set of voltage parameters used to adjust the input voltage of the Boost circuit when the load impedance fluctuates to maintain good impedance matching and power transfer efficiency. The fourth set of cooperative voltage regulation parameters is a set of voltage parameters used to maintain high efficiency and stability of power transfer when the load impedance is stable. Power regulation indicators are key indicators used to evaluate power transfer efficiency and stability, such as power output efficiency, reflected power suppression rate, and power stability window period. Online correction refers to dynamically adjusting the input voltage of the Boost circuit based on real-time detected power and impedance data during system operation to achieve optimal power transfer performance.

[0029] Execution steps: In plasma processing, the impedance of the reaction chamber load changes dynamically due to process parameters and environmental interference. By analyzing the impedance matching relationship between the Boost circuit and the reaction chamber load, the third and fourth cooperative voltage control parameter sets are determined for load impedance fluctuation and stability, respectively. Furthermore, when the load impedance fluctuates, the input voltage of the Boost circuit is adjusted using the third cooperative voltage control parameter set to maintain good impedance matching and reduce reflected power; when the load impedance is stable, the fourth cooperative voltage control parameter set is used to maintain the efficiency and stability of power transmission.

[0030] Based on power regulation indices and combined with the first, second, third, and fourth collaborative voltage regulation parameter sets, the initial input voltage of the power regulation network is corrected online, realizing the optimization of the adaptive voltage regulation parameter combination. The adaptive regulation mechanism can quickly respond to interferences such as grid fluctuations and load changes, ensuring the efficiency and stability of power transmission. Furthermore, in dynamic simulation verification, by embedding the cavity load impedance parameter into the circuit simulation model, the impedance change during the plasma source power transmission process is simulated, and the output power data and reflected power data corresponding to the initial input voltage are recorded. The power regulation indices, including power output efficiency and power output stability, are evaluated through the output power data and reflected power data to determine the optimal adaptive voltage regulation parameter combination.

[0031] Furthermore, the method of this application includes:

[0032] The directional coupler converts the plasma source output power and reflected power into detectable electrical signals, and converts the input voltage into an adjustable output voltage mode adapted to the plasma source. The directional coupler is used in conjunction with a power comparator to detect power deviation and determine the first and second sets of cooperative voltage control parameters. The Boost circuit is used in conjunction with an impedance analyzer to detect load impedance and determine the third and fourth sets of cooperative voltage control parameters.

[0033] Specifically, a directional coupler is a microwave device that couples a portion of the output power and reflected power of a plasma source and converts it into a detectable electrical signal, typically used for power monitoring and feedback control; a power comparator is an electronic device that compares the magnitudes of two power signals and outputs a power deviation signal, used to compare the output power of the plasma source with a set power and detect power deviation; an impedance analyzer is an instrument for measuring and analyzing the impedance characteristics of a circuit, used to detect impedance changes in the load of the reaction chamber; power deviation detection refers to detecting the deviation between the actual output power of the plasma source and the set power, and the power deviation can be used to adjust the input voltage of the Boost circuit to achieve precise power control; load impedance detection refers to measuring the impedance changes of the load of the reaction chamber using an impedance analyzer, providing data support for impedance matching, and load impedance detection can be used to adjust the input voltage of the Boost circuit to maintain good impedance matching.

[0034] Execution steps: During plasma processing, the directional coupler converts the output power and reflected power of the plasma source into detectable electrical signals, and simultaneously converts the input voltage into an adjustable output voltage mode adapted to the plasma source, ensuring accurate monitoring and transmission of the power signal and providing basic data for subsequent power regulation; through the cooperation of the directional coupler and the power comparator, power deviation is detected. When a power deviation is detected, the first set of coordinated voltage regulation parameters adapted when the reflected power exceeds the limit and the second set of coordinated voltage regulation parameters adapted when the reflected power is normal are determined according to the magnitude and direction of the deviation.

[0035] Simultaneously, a Boost circuit is used in conjunction with an impedance analyzer to detect load impedance. When load impedance fluctuations are detected, the third set of coordinated voltage control parameters is determined based on the magnitude and trend of the impedance change, and the fourth set of coordinated voltage control parameters is determined when the load impedance fluctuates, in order to maintain good impedance matching and reduce reflected power. Based on the first, second, third, and fourth sets of coordinated voltage control parameters, multi-dimensional detection and balanced control are performed, which can dynamically respond to power deviations and load impedance changes, achieve high-precision power control, improve the power output efficiency and stability of the plasma source, and improve the reflection power suppression rate through the control mechanism, thus significantly improving the efficiency and quality of plasma processing.

[0036] Furthermore, the method of this application includes:

[0037] The plasma process requirements are introduced, and the initial input voltage is configured. Environmental interference factors, including grid voltage fluctuations and sudden changes in cavity load impedance, are set. Based on the environmental interference factors, the effects of directional coupler detection delay and Boost circuit response hysteresis are analyzed, and a circuit simulation model of the plasma source power transmission process is constructed. Based on the circuit simulation model, the power output corresponding to the initial input voltage is dynamically simulated and verified to evaluate the power control indicators, including power output efficiency and power output stability.

[0038] Specifically, plasma process requirements refer to the specific requirements for parameters such as power, pressure, etching rate, and thin film deposition thickness during plasma processing. These requirements are used to determine the baseline value for the initial input voltage. Environmental interference factors refer to external factors that may affect power transmission and stability during plasma processing, including grid voltage fluctuations and sudden changes in cavity load impedance. Directional coupler detection delay refers to the response time delay of the directional coupler when detecting power changes; this delay may affect the real-time performance and accuracy of power regulation. Boost circuit response lag refers to the response time lag of the Boost circuit when adjusting the input voltage; this lag may affect the dynamic performance of power regulation. Circuit simulation models are computer-simulated models of the plasma source power transmission process, used to analyze and verify the effectiveness of power regulation strategies. Power regulation indicators are key metrics used to evaluate power transmission efficiency and stability, including power output efficiency and power output stability.

[0039] Execution steps: During plasma processing, plasma process requirement information, including etching rate and thin film deposition thickness, is introduced. The initial input voltage is configured, and environmental interference factors, including grid voltage fluctuations and cavity load impedance changes, are set. Environmental interference factors will affect the stability and efficiency of power transmission. Based on environmental interference factors, the impact of directional coupler detection delay and Boost circuit response hysteresis is analyzed. The impact of directional coupler detection delay and Boost circuit response hysteresis will affect the real-time performance and accuracy of power regulation.

[0040] A circuit simulation model of the plasma source power transmission process is constructed, incorporating environmental interference factors and analyzing the effects of directional coupler detection delay and Boost circuit response hysteresis into the model. Through this model, dynamic simulation verification of the power output corresponding to the initial input voltage is performed, simulating grid voltage fluctuations and load impedance abrupt changes, and recording output power and reflected power data. The power regulation indicators, including power output efficiency and stability, are evaluated based on the simulation results. Through verification and evaluation based on the circuit simulation model, the initial input voltage is optimized to ensure efficient power transmission and a stable plasma processing process in practical applications.

[0041] Furthermore, by incorporating plasma process requirement information and configuring the initial input voltage, the method of this application includes:

[0042] Upload plasma process parameters including etching rate and thin film deposition thickness, and analyze the target output power, allowable reflection power threshold, and cavity working pressure from the process requirement information; generate an initial voltage reference value that conforms to the power transmission characteristics based on the target output power, allowable reflection power threshold, and cavity working pressure from the process requirement information; perform gradient adjustment tests on the initial voltage reference value to determine the initial input voltage.

[0043] Specifically, plasma process parameters refer to the key parameters that need to be controlled and optimized during plasma processing, including etching rate and thin film deposition thickness. These parameters directly affect processing quality and efficiency. Process requirement information refers to the specific requirements determined based on the plasma process parameters, including target output power, allowable reflection power threshold, and cavity working pressure. This information guides the design of power control strategies. Target output power refers to the power level that the plasma source needs to achieve to meet specific processing requirements. Allowable reflection power threshold refers to the maximum proportion of reflection power allowed during plasma processing; exceeding this threshold may lead to decreased power transmission efficiency and equipment damage. Cavity working pressure refers to the gas pressure within the plasma reaction cavity, affecting plasma generation and stability. Initial voltage reference value refers to the reference value of the initial input voltage calculated based on the process requirement information. This value serves as the starting point for power control. Gradient adjustment testing involves gradually adjusting the input voltage and observing changes in power output and reflection power to determine the optimal initial input voltage.

[0044] Execution steps: During plasma processing, plasma process parameters including etching rate and thin film deposition thickness are uploaded. The target output power, allowable reflection power threshold, and cavity working pressure in the process requirement information are analyzed to generate an initial voltage reference value that meets the power transmission characteristics. A gradient adjustment test is performed on the initial voltage reference value to determine the optimal initial input voltage. Specifically, starting from the initial voltage reference value of 100V, the input voltage is gradually adjusted by 5V each time, and the changes in power output and reflection power are observed. If at 105V, the output power is 1000W and the reflection power is 8W, with a reflection power ratio of 0.8%, which meets the process requirements; at 95V, the output power is 950W and the reflection power is 10W, with a reflection power ratio of 1.05%, which does not meet the process requirements. Therefore, the preferred initial input voltage is 105V. Furthermore, through this generation of the initial voltage reference value based on process requirement information and the gradient adjustment test, it is ensured that the initial input voltage can meet the power transmission characteristics of plasma processing, thereby improving processing efficiency and quality.

[0045] Furthermore, the power output corresponding to the initial input voltage is dynamically simulated and verified to evaluate the power regulation index. The method of this application includes:

[0046] The cavity load impedance parameters are embedded into the circuit simulation model to simulate the impedance change during plasma source power transmission. The output power data and reflected power data, voltage adjustment response window period and power stabilization window period corresponding to the initial input voltage are recorded. The power output efficiency in the power control index is evaluated using the output power data and reflected power data corresponding to the initial input voltage. The power output stability in the power control index is evaluated using the voltage adjustment response window period and power stabilization window period corresponding to the initial input voltage.

[0047] Specifically, cavity load impedance parameters refer to the impedance characteristics of the cavity load, including equivalent resistance, equivalent capacitance, and impedance variation curves over process time. Cavity load impedance parameters directly affect the efficiency and stability of power transmission. Circuit simulation models are computer-simulated models of the plasma source power transmission process, used to analyze and verify the effectiveness of power control strategies. Voltage adjustment response window period refers to the time required from a change in input voltage to the start of stable power output, reflecting the system's response speed to voltage changes. Power stability window period refers to the time during which the power output remains stable within a certain range, reflecting the system's stability. Power output efficiency refers to the ratio of plasma source output power to input power, reflecting the efficiency of power transmission. Power output stability refers to the degree of fluctuation in power output over a certain period, reflecting the stability of power transmission.

[0048] Execution steps: During plasma processing, the cavity load impedance parameters are embedded into the circuit simulation model to simulate the impedance changes during plasma source power transmission. Through the circuit simulation model, the output power data, reflected power data, voltage adjustment response window, and power stabilization window corresponding to the initial input voltage are recorded. Based on the output power data, reflected power data, voltage adjustment response window, and power stabilization window corresponding to the initial input voltage, the power output efficiency in the power control index is evaluated. The power output efficiency is equal to the percentage of output power to input power.

[0049] By evaluating the voltage adjustment response window and power stabilization window corresponding to the initial input voltage, the stability of power output in the power control index is assessed. The shorter the voltage adjustment response window, the faster the response to voltage changes; the longer the power stabilization window, the more stable the power output. Based on the voltage adjustment response window, the system can quickly respond to voltage changes and maintain stable power output over a longer period. Through this simulation model-based evaluation, the initial input voltage can be optimized to ensure efficient power transmission and stable plasma processing in practical applications.

[0050] Furthermore, the method of this application includes:

[0051] The cavity load impedance parameters are embedded into the circuit simulation model, including plasma equivalent resistance, equivalent capacitance, and impedance variation curves with process time. The power transmission link under the Boost circuit-plasma source-reaction cavity load mapping is divided into circuit topologies, and the power reflection coefficient under different impedance states is analyzed. Using the power reflection coefficient as a key indicator, the cavity load impedance parameters are loaded onto the power transmission nodes of the circuit simulation model in time intervals to determine the loading strategy of the cavity load impedance parameters.

[0052] Specifically, cavity load impedance parameters refer to the impedance characteristics of the cavity load, including the plasma equivalent resistance, equivalent capacitance, and impedance variation curve over process time. Cavity load impedance parameters directly affect the efficiency and stability of power transmission. Circuit simulation model refers to a computer-simulated model of the plasma source power transmission process, used to analyze and verify the effectiveness of power control strategies. Circuit topology partitioning refers to decomposing a complex circuit system into multiple sub-circuits or modules for separate analysis and optimization, used to analyze the power transmission link between the Boost circuit, plasma source, and reaction cavity load. Power reflection coefficient refers to the ratio of reflected power to incident power, a key indicator for measuring power transmission efficiency; the lower the power reflection coefficient, the higher the power transmission efficiency. Loading strategy refers to how to apply the cavity load impedance parameters to the power transmission nodes of the circuit simulation model in time intervals to simulate actual operating conditions and optimize power transmission performance.

[0053] Execution steps: During plasma processing, the cavity load impedance parameters are embedded into the circuit simulation model. The cavity load impedance parameters include the plasma equivalent resistance, equivalent capacitance, and impedance variation curves with process time. The power transmission link under the Boost circuit-plasma source-reaction cavity load mapping is divided into circuit topologies, and the power reflection coefficient under different impedance states is analyzed.

[0054] The power transmission link is divided into three main parts: the Boost circuit, the plasma source, and the reaction cavity load. Under different impedance conditions, the power reflection coefficient is calculated separately. Using the power reflection coefficient as a key indicator, the cavity load impedance parameters are applied to the power transmission nodes of the circuit simulation model in time segments to determine the loading strategy of the cavity load impedance parameters. In each time segment, the load impedance in the simulation model is adjusted according to the corresponding impedance parameters to simulate the actual working conditions. Furthermore, through this time-segmented loading strategy, the dynamic changes in the plasma processing process can be simulated more accurately, and the power transmission performance can be optimized. This dynamic loading strategy can effectively reduce power reflection, improve power transmission efficiency, and ensure the high efficiency and stability of the plasma processing process.

[0055] Furthermore, based on power regulation indicators, and combining a first set of coordinated voltage regulation parameters, a second set of coordinated voltage regulation parameters, a third set of coordinated voltage regulation parameters, and a fourth set of coordinated voltage regulation parameters, the initial input voltage of the power regulation network is corrected online to determine the adaptive voltage regulation parameter combination. The method of this application includes:

[0056] Using the first, second, third, and fourth sets of coordinated voltage regulation parameters as decision variables, the influence weights on the power regulation index are analyzed. A multi-objective optimization index is configured based on these influence weights, aiming to minimize the voltage adjustment amplitude and maximize the reflection power suppression rate. The decision variables are iteratively updated to determine the optimal correction coefficient and correction timing corresponding to the initial input voltage. Based on the optimal correction coefficient and correction timing, the initial input voltage is dynamically calibrated, outputting an adaptive voltage regulation parameter combination that satisfies the power regulation index.

[0057] Specifically, decision variables refer to the parameters that can be adjusted during the optimization process, including the first, second, third, and fourth sets of coordinated voltage regulation parameters. These parameters determine the adjustment strategy of the Boost circuit input voltage under different operating conditions. Power regulation indicators are key indicators used to evaluate power transmission efficiency and stability, including power output efficiency, reflected power suppression rate, and voltage adjustment amplitude. Influence weights refer to the degree of influence of each decision variable on the power regulation indicators. By analyzing the influence weights, it can be determined which parameters have a greater impact on the regulation indicators. Multi-objective optimization indexes refer to multiple objectives that need to be considered simultaneously during the optimization process, including minimizing the voltage adjustment amplitude and maximizing the reflected power suppression rate. These multiple objectives usually require trade-offs and balances. Optimal correction coefficients refer to the best voltage adjustment coefficients determined during the optimization process, used to adjust the input voltage of the Boost circuit. Correction timing refers to the best voltage adjustment time series determined during the optimization process, used for voltage adjustment at different time points.

[0058] Execution steps: During plasma processing, the first, second, third, and fourth sets of coordinated voltage control parameters are used as decision variables. The influence weights of these parameters on the power control index are analyzed. Through simulation and experimental data, the influence weights of the first, second, third, and fourth sets of coordinated voltage control parameters on the reflection power suppression rate, the second, third, and fourth sets of coordinated voltage control parameters on the reflection power suppression rate, and the fourth set of coordinated voltage control parameters on the reflection power suppression rate are determined.

[0059] Based on the influence weights of the first, second, third, and fourth sets of coordinated voltage regulation parameters on the reflection power suppression rate, a multi-objective optimization index is configured. The optimization objectives are to minimize the voltage adjustment amplitude and maximize the reflection power suppression rate. By continuously iterating and updating the decision variables, the optimal correction coefficient and correction timing are determined. After multiple iterations, the optimal correction coefficient and correction timing corresponding to the initial input voltage are determined.

[0060] Dynamic calibration is performed based on the optimal correction coefficient and correction timing corresponding to the initial input voltage, and the output is an adaptive voltage control parameter combination that meets the power control index. This satisfies the optimization objectives of minimizing the voltage adjustment amplitude and maximizing the reflection power suppression rate. Furthermore, based on simulation verification, the efficiency and stability of plasma source power transmission can be significantly improved through a dynamic calibration strategy based on multi-objective optimization.

[0061] Furthermore, based on the optimal correction coefficient and correction timing, the initial input voltage is dynamically calibrated. Subsequently, the method of this application further includes:

[0062] Real-time acquisition of reflected power detection data from the directional coupler is used to determine the current power reflection loss value. The current power reflection loss value is compared with the allowable reflected power threshold. If the value exceeds the allowable reflected power threshold, the trend of power regulation index change under the current voltage regulation parameter combination configuration is predicted. Based on the trend of power regulation index change, it is determined whether an online correction mechanism is triggered.

[0063] Specifically, reflected power detection data refers to the value of reflected power collected in real time through the directional coupler, used to monitor the reflection situation during power transmission; power reflection loss value refers to the ratio of reflected power to total output power at the current moment, reflecting the degree of loss during power transmission; allowable reflected power threshold refers to the maximum proportion of reflected power allowed during plasma processing, exceeding the allowable reflected power threshold may lead to a decrease in power transmission efficiency and equipment damage; power control index change trend refers to the change trend of key indicators such as power output efficiency and reflected power suppression rate over time under the current voltage control parameter combination; online correction mechanism refers to the dynamic adjustment of voltage control parameters based on real-time monitoring data during system operation to maintain the high efficiency and stability of power transmission.

[0064] Execution steps: During plasma processing, the reflected power detection data of the directional coupler is collected in real time to determine the current power reflection loss value. The current power reflection loss value is the percentage of the collected reflected power to the total output power. The current power reflection loss value is compared with the allowable reflection power threshold. If the current power reflection loss value exceeds the allowable reflection power threshold, the trend of power control index change under the current voltage control parameter combination configuration will be predicted.

[0065] By using simulation or historical data, the changing trends of power output efficiency and reflection power suppression rate corresponding to the continued use of the current voltage regulation parameter combination are predicted. Based on the changing trends of power output efficiency and reflection power suppression rate, it is determined whether to trigger the online correction mechanism. If the prediction results show that the power regulation indicators will decrease significantly, the online correction mechanism will be triggered. According to the pre-set optimization strategy, the voltage regulation parameters of the Boost circuit are adjusted to reduce reflection power and improve power output efficiency, so as to maintain the high efficiency and stability of power transmission. Through this real-time monitoring and dynamic adjustment mechanism, it is possible to quickly respond to changes in power reflection, maintain the high efficiency and stability of power transmission, and significantly improve the quality and efficiency of plasma processing.

[0066] In summary, the beneficial effects of the embodiments of this application are:

[0067] Because a deterministic power control network is employed, the core components of the power control network include a Boost circuit, a directional coupler, and a reaction chamber load. Based on the signal coupling relationship between the Boost circuit and the directional coupler, a first set of cooperative voltage control parameters is determined when the reflected power exceeds the limit, and a second set is determined when the reflected power is normal. Based on the impedance matching relationship between the Boost circuit and the reaction chamber load, a third set of cooperative voltage control parameters is determined when the load impedance fluctuates, and a fourth set is determined when the load impedance is stable. Based on power control indicators, the initial input voltage of the power control network is corrected online using the first, second, third, and fourth sets of cooperative voltage control parameters to determine the adaptive voltage control parameter combination. This application provides a plasma source power reflection power control method, system, and device. It realizes the core components and coupling relationship of the deterministic power control network, dynamically calls adaptive parameters according to different operating conditions, quickly responds to interference such as grid fluctuations and load changes, improves power output stability, ensures etching rate, and enhances the technical effect of improving the adaptability of control parameters to actual operating conditions.

[0068] Example 2, based on the same inventive concept as the plasma source power reflection power control method in the foregoing examples, such as... Figure 2 As shown in the embodiment of this application, a plasma source power reflection power control system is provided, wherein the system includes:

[0069] Power regulation network determination module M100: determines the power regulation network, the core components of which include a Boost circuit, a directional coupler, and a reaction chamber load.

[0070] Signal coupling module M200: Based on the signal coupling relationship between the Boost circuit and the directional coupler, it determines the first set of cooperative voltage regulation parameters adapted when the reflected power exceeds the limit and the second set of cooperative voltage regulation parameters adapted when the reflected power is normal.

[0071] Impedance matching module M300: Based on the impedance matching relationship between the Boost circuit and the load of the reaction chamber, it determines the third set of cooperative voltage regulation parameters to be adapted when the load impedance fluctuates and the fourth set of cooperative voltage regulation parameters to be adapted when the load impedance is stable.

[0072] Online correction module M400: Based on the power regulation index, it performs online correction on the initial input voltage of the power regulation network by combining the first, second, third, and fourth cooperative voltage regulation parameter sets, and determines the adaptive voltage regulation parameter combination.

[0073] Furthermore, the online correction module M400 is also used to perform the following method:

[0074] The directional coupler converts the plasma source output power and reflected power into detectable electrical signals, and converts the input voltage into an adjustable output voltage mode adapted to the plasma source. The directional coupler is used in conjunction with a power comparator to detect power deviation and determine the first and second sets of cooperative voltage control parameters. The Boost circuit is used in conjunction with an impedance analyzer to detect load impedance and determine the third and fourth sets of cooperative voltage control parameters.

[0075] Furthermore, the online correction module M400 is also used to perform the following method:

[0076] The plasma process requirements are introduced, and the initial input voltage is configured. Environmental interference factors, including grid voltage fluctuations and sudden changes in cavity load impedance, are set. Based on the environmental interference factors, the effects of directional coupler detection delay and Boost circuit response hysteresis are analyzed, and a circuit simulation model of the plasma source power transmission process is constructed. Based on the circuit simulation model, the power output corresponding to the initial input voltage is dynamically simulated and verified to evaluate the power control indicators, including power output efficiency and power output stability.

[0077] Furthermore, the online correction module M400 is also used to perform the following method:

[0078] Upload plasma process parameters including etching rate and thin film deposition thickness, and analyze the target output power, allowable reflection power threshold, and cavity working pressure from the process requirement information; generate an initial voltage reference value that conforms to the power transmission characteristics based on the target output power, allowable reflection power threshold, and cavity working pressure from the process requirement information; perform gradient adjustment tests on the initial voltage reference value to determine the initial input voltage.

[0079] Furthermore, the online correction module M400 is also used to perform the following method:

[0080] The cavity load impedance parameters are embedded into the circuit simulation model to simulate the impedance change during plasma source power transmission. The output power data and reflected power data, voltage adjustment response window period and power stabilization window period corresponding to the initial input voltage are recorded. The power output efficiency in the power control index is evaluated using the output power data and reflected power data corresponding to the initial input voltage. The power output stability in the power control index is evaluated using the voltage adjustment response window period and power stabilization window period corresponding to the initial input voltage.

[0081] Furthermore, the online correction module M400 is also used to perform the following method:

[0082] The cavity load impedance parameters are embedded into the circuit simulation model, including plasma equivalent resistance, equivalent capacitance, and impedance variation curves with process time. The power transmission link under the Boost circuit-plasma source-reaction cavity load mapping is divided into circuit topologies, and the power reflection coefficient under different impedance states is analyzed. Using the power reflection coefficient as a key indicator, the cavity load impedance parameters are loaded onto the power transmission nodes of the circuit simulation model in time intervals to determine the loading strategy of the cavity load impedance parameters.

[0083] Furthermore, the online correction module M400 is used to perform the following method:

[0084] Using the first, second, third, and fourth sets of coordinated voltage regulation parameters as decision variables, the influence weights on the power regulation index are analyzed. A multi-objective optimization index is configured based on these influence weights, aiming to minimize the voltage adjustment amplitude and maximize the reflection power suppression rate. The decision variables are iteratively updated to determine the optimal correction coefficient and correction timing corresponding to the initial input voltage. Based on the optimal correction coefficient and correction timing, the initial input voltage is dynamically calibrated, outputting an adaptive voltage regulation parameter combination that satisfies the power regulation index.

[0085] Furthermore, the online correction module M400 is also used to perform the following method:

[0086] Real-time acquisition of reflected power detection data from the directional coupler is used to determine the current power reflection loss value. The current power reflection loss value is compared with the allowable reflected power threshold. If the value exceeds the allowable reflected power threshold, the trend of power regulation index change under the current voltage regulation parameter combination configuration is predicted. Based on the trend of power regulation index change, it is determined whether an online correction mechanism is triggered.

[0087] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Figure 1 The plasma source power reflection power control method and specific examples in Example 1 are also applicable to the plasma source power reflection power control system in this example. Through the foregoing detailed description of the plasma source power reflection power control method, those skilled in the art can clearly understand the plasma source power reflection power control system in this example. Therefore, for the sake of brevity, it will not be described in detail here.

[0088] Example 3: Based on the same inventive concept as the plasma source power reflection power control method in Example 1, the present invention also provides an electronic device, including: at least one processor, and a memory communicatively connected to the at least one processor, wherein the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor to enable the at least one processor to perform the steps of the method described in Example 1.

[0089] like Figure 3 As shown, the bus architecture is represented by bus 300. Bus 300 may include any number of interconnected buses and bridges, connecting various circuits including one or more processors represented by processor 302 and memory represented by memory 304. Bus 300 may also connect various other circuits such as peripheral devices, voltage regulators, and power management circuits, which are well known in the art and therefore will not be described further herein. Bus interface 305 provides an interface between bus 300 and receiver 301 and transmitter 303. Receiver 301 and transmitter 303 may be the same element, i.e., a transceiver, providing a unit for communicating with various other devices over a transmission medium. Processor 302 is responsible for managing bus 300 and general processing, while memory 304 can be used to store data used by processor 302 during operation.

[0090] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0091] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of this application and its equivalents, this application also intends to include such modifications and variations.

Claims

1. A method for controlling the reflected power of a plasma source, characterized in that, The method includes: A power regulation network is defined, and the core components of the power regulation network include a Boost circuit, a directional coupler, and a reaction chamber load. Based on the signal coupling relationship between the Boost circuit and the directional coupler, determine the first set of cooperative voltage regulation parameters adapted when the reflected power exceeds the limit and the second set of cooperative voltage regulation parameters adapted when the reflected power is normal. Based on the impedance matching relationship between the Boost circuit and the reaction chamber load, a third set of cooperative voltage regulation parameters is determined when the load impedance fluctuates, and a fourth set of cooperative voltage regulation parameters is determined when the load impedance is stable. Based on the power regulation index, the initial input voltage of the power regulation network is corrected online by combining the first, second, third, and fourth collaborative voltage regulation parameter sets to determine the adaptive voltage regulation parameter combination. Specifically, based on power regulation indicators, and in conjunction with a first set of coordinated voltage regulation parameters, a second set of coordinated voltage regulation parameters, a third set of coordinated voltage regulation parameters, and a fourth set of coordinated voltage regulation parameters, the initial input voltage of the power regulation network is corrected online to determine the adaptive voltage regulation parameter combination, including: The first set of coordinated voltage regulation parameters, the second set of coordinated voltage regulation parameters, the third set of coordinated voltage regulation parameters, and the fourth set of coordinated voltage regulation parameters are used as decision variables to analyze the weight of their influence on the power regulation index. By using the aforementioned influence weights, a multi-objective optimization index is configured with the objectives of minimizing the voltage adjustment amplitude and maximizing the reflection power suppression rate. The decision variables are continuously updated iteratively to determine the optimal correction coefficient and correction timing corresponding to the initial input voltage. The initial input voltage is dynamically calibrated based on the optimal correction coefficient and correction timing, and an adaptive voltage regulation parameter combination that meets the power regulation index is output.

2. The plasma source power reflection power control method as described in claim 1, characterized in that, The directional coupler converts the plasma source output power and reflected power into detectable electrical signals, and converts the input voltage into an adjustable output voltage mode adapted to the plasma source. The directional coupler is used in conjunction with the power comparator to detect power deviation and determine the first set of cooperative voltage regulation parameters and the second set of cooperative voltage regulation parameters. The Boost circuit is used in conjunction with an impedance analyzer to detect load impedance and determine the third and fourth sets of collaborative voltage regulation parameters.

3. The plasma source power reflection power control method as described in claim 2, characterized in that, Incorporate plasma process requirements information and configure the initial input voltage; The settings include environmental interference factors such as grid voltage fluctuations and sudden changes in cavity load impedance; Based on the aforementioned environmental interference factors, the effects of directional coupler detection delay and Boost circuit response hysteresis are analyzed, and a circuit simulation model of the plasma source power transmission process is constructed. Based on the circuit simulation model, the power output corresponding to the initial input voltage is dynamically simulated and verified to evaluate the power regulation index, which includes power output efficiency and power output stability.

4. The plasma source power reflection power control method as described in claim 3, characterized in that, The method includes incorporating plasma process requirement information and configuring the initial input voltage, wherein the method comprises: Upload plasma process parameters including etching rate and thin film deposition thickness, and analyze the target output power, allowable reflection power threshold, and cavity working pressure from the process requirement information; Using the target output power, allowable reflection power threshold, and cavity working pressure from the process requirements information, an initial voltage reference value that conforms to the power transmission characteristics is generated. A gradient adjustment test is performed on the initial voltage reference value to determine the initial input voltage.

5. The plasma source power reflection power control method as described in claim 3, characterized in that, The power output corresponding to the initial input voltage is dynamically simulated and verified to evaluate the power regulation index. The method includes: The cavity load impedance parameters are embedded into the circuit simulation model to simulate the impedance change during the plasma source power transmission process, and the output power data and reflected power data, voltage adjustment response window period and power stabilization window period corresponding to the initial input voltage are recorded. The power output efficiency in the power regulation index is evaluated by using the output power data and reflected power data corresponding to the initial input voltage; The power output stability in the power regulation index is evaluated by using the voltage adjustment response window period and power stabilization window period corresponding to the initial input voltage.

6. The plasma source power reflection power control method as described in claim 5, characterized in that, The cavity load impedance parameters are embedded in the circuit simulation model, wherein the cavity load impedance parameters include plasma equivalent resistance, equivalent capacitance, and impedance variation curves with process time. The power transmission link under the Boost circuit-plasma source-reaction chamber load mapping is divided into circuit topologies, and the power reflection coefficient under different impedance states is analyzed. Using the power reflection coefficient as a key indicator, the cavity load impedance parameter is applied to the power transmission node of the circuit simulation model in time intervals to determine the loading strategy of the cavity load impedance parameter.

7. The plasma source power reflection power control method as described in claim 1, characterized in that, Based on the optimal correction coefficient and correction timing, the initial input voltage is dynamically calibrated. Then, the method further includes: Real-time acquisition of reflected power detection data from the directional coupler to determine the current power reflection loss value; The current power reflection loss value is compared with the allowable reflection power threshold. If it exceeds the allowable reflection power threshold, the trend of power regulation index change under the current voltage regulation parameter combination configuration is predicted. By analyzing the changing trends of power regulation indicators, it can be determined whether the online correction mechanism has been triggered.

8. A plasma source power reflection power control system, characterized in that, The system is used for implementing the plasma source power reflection power control method according to any one of claims 1-7, wherein the system comprises: Power regulation network determination module: Determines the power regulation network, the core components of which include a Boost circuit, a directional coupler, and a reaction chamber load; Signal coupling module: Based on the signal coupling relationship between the Boost circuit and the directional coupler, determine the first set of cooperative voltage regulation parameters adapted when the reflected power exceeds the limit and the second set of cooperative voltage regulation parameters adapted when the reflected power is normal; Impedance matching module: Based on the impedance matching relationship between the Boost circuit and the load of the reaction chamber, determine the third set of cooperative voltage regulation parameters to be adapted when the load impedance fluctuates and the fourth set of cooperative voltage regulation parameters to be adapted when the load impedance is stable. Online correction module: Based on the power regulation index, and combined with the first, second, third, and fourth collaborative voltage regulation parameter sets, the initial input voltage of the power regulation network is corrected online to determine the adaptive voltage regulation parameter combination.

9. An electronic device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the plasma source power reflection power control method according to any one of claims 1-7.

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