Methods of detecting semiconductor process chamber, levelness, and / or centering, semiconductor processing equipment, and storage media

Abstract

The present application relates to the technical field of semiconductor processing, and in particular to a semiconductor process chamber, a method for detecting levelness and / or centerness, a semiconductor processing device and a storage medium. The provided semiconductor process chamber comprises a cavity, wherein a measured object is arranged in the cavity; a plurality of groups of distance measuring sensors are arranged on the inner side wall of the cavity, and the plurality of groups of distance measuring sensors are arranged at intervals along the height direction of the cavity. Each group of distance measuring sensors comprises a plurality of distance measuring sensors, the plurality of distance measuring sensors are arranged at intervals along the circumference of the cavity, and the plurality of distance measuring sensors in each group are on the same horizontal plane. The levelness and / or centerness of the measured object are detected by using the plurality of groups of distance measuring sensors. The present application can realize online detection of the centerness and levelness of the installation of each component in the cavity and the centerness and levelness in the movement process, and improve the accuracy of detection.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and more specifically, to a semiconductor process chamber, a method for detecting levelness and / or centering, semiconductor processing equipment, and a storage medium. Background Technology

[0002] Physical vapor deposition (PVD) is a widely used thin-film manufacturing technology in the semiconductor industry, generally referring to thin-film preparation processes that use physical methods to prepare thin films. In the integrated circuit manufacturing industry, it specifically refers to magnetron sputtering, a crucial process in integrated circuit manufacturing, primarily used for depositing various thin films within chips.

[0003] In the integrated circuit manufacturing industry, with the continuous advancement of technology, the alignment and levelness of components installed within the reaction chamber, as well as during movement, are becoming increasingly critical. If the alignment or levelness of some components within the reaction chamber is not guaranteed, it will not only affect the process results but may also cause problems such as fragmentation and hardware damage.

[0004] In related technologies, levelness is typically measured using a level or bubble level to determine the levelness of components. Neutralization is usually calibrated using calipers or feeler gauges. However, these methods have limitations. Levelness measurement can only detect static levelness when the chamber is not closed; it cannot detect the levelness of components or wafers during real-time movement. For neutralization measurement, due to the complex chamber structure and the varying shapes of each component, precise calibration using measuring instruments is impossible. Summary of the Invention

[0005] The purpose of this invention is to provide a method for detecting the levelness and / or alignment of semiconductor process chambers, semiconductor processing equipment, and storage media, which can at least alleviate the problems of the current levelness or alignment detection methods being singular or lacking accuracy. It can realize online detection of the alignment and levelness of components in the process chamber, ensuring the safety of process results and components.

[0006] In a first aspect, the present invention provides a semiconductor process chamber comprising:

[0007] A cavity, wherein the object to be measured is disposed within the cavity;

[0008] Multiple sets of ranging sensors are disposed on the inner sidewall of the cavity. The multiple sets of ranging sensors are spaced apart along the height direction of the cavity. Each set of ranging sensors includes multiple ranging sensors. The multiple ranging sensors are arranged spaced apart along the circumference of the cavity, and the multiple ranging sensors in each set are on the same horizontal plane.

[0009] The levelness and / or centering of the measured object are detected using multiple sets of the ranging sensors.

[0010] In some alternative embodiments, the ranging sensor includes a laser ranging sensor; a control device is provided on the outside of the cavity, the control device being signal-connected to the laser ranging sensor for receiving and processing signals transmitted by the laser ranging sensor.

[0011] In some alternative implementations, the number of groups of the ranging sensors is ≥3.

[0012] In some alternative embodiments, each group of the ranging sensors includes ≥4 ranging sensors.

[0013] In some alternative embodiments, the distance between two adjacent sets of ranging sensors is 5cm to 10cm in the height direction of the process cavity.

[0014] In some alternative embodiments, the cavity includes a bottom wall and a plurality of side walls, the plurality of side walls being connected in sequence and arranged around the bottom wall to form a process cavity, with an angle structure formed between adjacent side walls, and each of the ranging sensors in each group being located at each of the angle structures.

[0015] In some alternative embodiments, the object under test includes a target material located at the upper interior of the cavity.

[0016] In some alternative embodiments, the object under test includes a base located at the lower end of the cavity.

[0017] In some alternative embodiments, the object under test includes a substrate located on a base inside the cavity.

[0018] In some alternative embodiments, the object under test includes a process component, which includes a shielding liner, a shielding ring, and a deposition ring. The shielding liner is disposed within the cavity, the shielding ring is vertically and vertically disposed within the shielding liner, and the deposition ring is disposed around a base within the cavity.

[0019] In a second aspect, the present invention provides a method for detecting levelness and / or neutrality, applied to a semiconductor process chamber as described above, the method comprising:

[0020] Multiple distance sensors in each group are used to acquire the distance between each sensor and the corresponding edge of the object being measured. The acquired distance values ​​are then compared to determine whether the centering of the object meets the requirements; and / or,

[0021] Multiple sets of distance sensors are used to obtain the distance between each set of distance sensors and the edge of the object at different heights. The multiple sets of distance values ​​are compared to determine whether the levelness of the object meets the requirements.

[0022] In some alternative implementations, the method includes two states: a static state and a dynamic state. In the static state, the semiconductor process chamber is in a state of preparation for process execution, and the object under test is a static component. In the dynamic state, the semiconductor process chamber is in a state of process execution, and the object under test is a dynamic component.

[0023] In some alternative implementations, in the static state, the ranging sensor measures the distance between the ranging sensor and the edge of the object being measured in a rotational scanning manner.

[0024] In some alternative implementations, in the dynamic state, the ranging sensor dynamically tracks the object being measured, samples at a frequency of not less than 10 times per second, and records the distances at various points along the trajectory of the object being measured.

[0025] In some optional implementations, in the static state, determining whether the centering of the object being measured meets the requirements includes: obtaining the difference between different distance values ​​at the same horizontal height; if the maximum difference is less than or equal to a threshold, the centering of the object being measured meets the requirements; otherwise, the requirements are not met.

[0026] In some optional implementations, in the static state, determining whether the levelness of the object being measured meets the requirements includes: acquiring multiple sets of distance values ​​at different height levels, each set of distance values ​​including the distance from different distance sensors at the same horizontal height to the corresponding edge of the object being measured; if the distance changes are consistent across different height levels, then the levelness of the object being measured meets the requirements; otherwise, it does not meet the requirements.

[0027] In some optional embodiments, in the dynamic state, determining whether the centering of the measured object meets the requirements includes: if the distances measured by different distance measuring sensors at the same horizontal height change synchronously and smoothly, then the centering of the measured object meets the requirements; if the distance measured by any distance measuring sensor increases or decreases suddenly, then the centering of the measured object does not meet the requirements.

[0028] In some optional embodiments, in the dynamic state, determining whether the levelness of the object being measured meets the requirements includes: if the variance of the trajectories measured by different ranging sensors at the same horizontal height is less than or equal to a predetermined value, then the levelness of the object being measured meets the requirements; otherwise, the requirements are not met.

[0029] In some alternative embodiments, after determining whether the alignment and / or levelness of the object under test meets the requirements in the static state, the method further includes: if the requirements are met, the semiconductor process chamber performs the process; if the requirements are not met, the semiconductor process chamber does not perform the process.

[0030] In some alternative embodiments, after determining whether the alignment and / or levelness of the object under test meets the requirements in the dynamic state, the method further includes: if the requirements are met, the semiconductor process chamber continues to execute the process; if the requirements are not met, the semiconductor process chamber stops executing the process.

[0031] Thirdly, the present invention provides a semiconductor processing apparatus comprising the aforementioned semiconductor process chamber.

[0032] Fourthly, the present invention provides a computer-readable storage medium having computer instructions stored thereon, which, when executed by a controller, implement the levelness and / or centering detection method as described above.

[0033] The above-described technical solutions adopted in the embodiments of this application can achieve the following beneficial effects:

[0034] The semiconductor process chamber of this application incorporates multiple sets of ranging sensors arranged within the chamber. These sets of sensors are spaced apart along the height of the chamber, and each set includes multiple ranging sensors arranged circumferentially along the same horizontal plane. This arrangement of multiple ranging sensors allows for online detection of the levelness and alignment of the object being measured within the chamber. Furthermore, this application can detect not only the static alignment and levelness of the object being measured but also its dynamic alignment and levelness during movement. This satisfies process requirements and protects hardware safety, reducing or avoiding process result deviations or hardware damage caused by unmet levelness or alignment requirements.

[0035] This invention utilizes multiple sets of ranging sensors to detect the levelness and / or centering of the object being measured within the cavity. The method is simple to implement, easy to operate, and can obtain data quickly and accurately. It can ensure process results and hardware safety, and is conducive to widespread application. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0037] Figure 1 This is a schematic diagram of the structure of a semiconductor process chamber provided in related technologies;

[0038] Figure 2 This is a schematic diagram of sparking occurring in a semiconductor process chamber.

[0039] Figure 3 A schematic diagram of arcing occurring on a substrate (wafer) in a semiconductor process chamber;

[0040] Figure 4 A schematic diagram showing the tilting of the substrate (wafer) during wafer transfer in a semiconductor process chamber;

[0041] Figure 5 This is a schematic diagram showing the tilting of the base during the lifting process in a semiconductor process chamber.

[0042] Figure 6 This is a schematic diagram of the structure of a semiconductor process chamber provided in an embodiment of the present invention;

[0043] Figure 7 A top view of a semiconductor process chamber provided in an embodiment of the present invention;

[0044] Figure 8 This is a schematic diagram of the structure of a ranging sensor (laser ranging sensor) provided in an embodiment of the present invention;

[0045] Figure 9 A schematic flowchart of a method for detecting levelness and / or neutrality (static detection) provided in an embodiment of the present invention;

[0046] Figure 10 A schematic flowchart of another method for detecting levelness and / or neutrality (dynamic detection) provided in this embodiment of the invention.

[0047] Figure label:

[0048] 10-Cavity; 101-Angle structure;

[0049] 20 - Distance sensor; 210 - Housing unit; 220 - Rotation unit; 230 - Laser emitting unit;

[0050] 30 - Control device;

[0051] 40-Target material;

[0052] 50-Base;

[0053] 60-substrate;

[0054] 70 - Process component; 710 - Shielding liner; 720 - Shielding ring; 730 - Deposition ring;

[0055] 80 - Lifting mechanism;

[0056] 910 - Upper electrode; 920 - Magnetron; 930 - Motor. Detailed Implementation

[0057] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0058] The present invention will now be described in further detail with reference to specific embodiments and accompanying drawings.

[0059] refer to Figures 1 to 5 As shown in the diagram, a schematic diagram of the physical vapor deposition process chamber in related technologies is as follows: Figure 1 As shown, the process chamber includes a cavity 10, within which process components such as a shielding liner 710, a shielding ring 720, and a deposition ring 730 are installed. The cavity 10 also contains a base 50, a lifting device, and a target 40. The base 50 supports a substrate 60, such as a wafer. The target 40 can be positioned directly above the base 50. The lifting device can be connected to the base 50 to drive its lifting movement. With the continuous advancement of technology, the alignment and levelness of some components within the chamber, as well as their alignment and levelness during movement, are becoming increasingly critical. Failure to guarantee the alignment or levelness of some components can not only affect the process results but may also cause fragmentation and hardware damage. As an example, for instance… Figure 2 As shown, if the shielding liner 710 in the process assembly is not properly aligned during physical vapor deposition (PM), it will spark with the target 40 during the process. As an example two, such as... Figure 3 As shown, if the base 50 inside the cavity 10 is not properly aligned, arcing will occur during the process, resulting in wafer scrap; or, even if it is not scrapped, it will cause the process result to be off-center, failing to meet the process requirements. As an example three, such as... Figure 4 As shown, during wafer movement, if the horizontal alignment fails to meet requirements, a collision occurs when the robotic arm comes to pick up the wafer, causing it to break. Therefore, the horizontal alignment during wafer movement needs to be monitored to ensure it meets requirements. As an example four, such as... Figure 5 As shown, if the levelness of the base 50 is not guaranteed during the lifting and lowering process, friction will occur between the base and the lifting mechanism, which may even cause the base 50 to be scrapped. Therefore, the levelness of the base 50 during the movement process needs to be monitored to ensure that it meets the requirements.

[0060] Therefore, online detection of the alignment and levelness of components installed within the chamber, as well as their alignment and levelness during movement, is crucial for meeting process requirements and protecting hardware safety. However, existing testing methods fall short of these needs and require improvement.

[0061] In view of this, the present invention provides a semiconductor process chamber, a semiconductor process chamber, a method for detecting levelness and / or alignment, a semiconductor processing equipment, and a storage medium. The present invention mainly improves the accuracy of detection by setting up multiple sets of ranging sensors to detect the alignment and levelness of the components installed in the chamber online, as well as the alignment and levelness during the movement process, thereby ensuring the process results and hardware safety.

[0062] refer to Figures 6 to 7 As shown in the embodiment of this application, a semiconductor process chamber includes:

[0063] Cavity 10, with the object to be measured placed inside cavity 10;

[0064] Multiple sets of ranging sensors 20 are disposed on the inner sidewall of the cavity 10. The multiple sets of ranging sensors 20 are spaced apart along the height direction of the cavity 10. Each set of ranging sensors 20 includes multiple ranging sensors 20. The multiple ranging sensors 20 are arranged spaced apart along the circumference of the cavity 10, and the multiple ranging sensors 20 in each set are on the same horizontal plane.

[0065] Multiple sets of ranging sensors 20 are used to detect the levelness and / or centering of the object being measured.

[0066] To meet process requirements and protect hardware safety, this application embodiment mainly installs multiple sets of ranging sensors 20 inside the cavity 10 to detect the alignment and levelness of the components installed inside the cavity, as well as their alignment and levelness during movement, and to determine in real time whether the next action can be performed, thereby ensuring process results and hardware safety.

[0067] The multiple sets of ranging sensors 20 need to be installed and arranged in a specific manner. For example, multiple sets of sensors are all set on the inner sidewall of the cavity 10, and the multiple sets of ranging sensors 20 are arranged at intervals along the height direction of the cavity 10. That is, a certain installation distance needs to be met between two adjacent sets of ranging sensors 20, so as to realize the detection of the levelness and / or centering of different components of the cavity 10, or to realize the detection of the levelness of the same component. Furthermore, in these multiple sets of ranging sensors 20, each set of ranging sensors 20 consists of multiple ranging sensors 20. The number of ranging sensors 20 included in each set of ranging sensors 20 can be the same or different, preferably the same. The multiple ranging sensors 20 in each set are arranged at intervals along the circumference of the cavity 10 on the same horizontal plane. That is, the ranging sensors 20 in the same set are arranged at the same height, and the ranging sensors 20 in different sets are arranged at different heights. This arrangement allows for the measurement of the distance from the ranging sensor 20 to the hardware to be detected at any location, facilitating the detection of the levelness and / or centering of the object being measured within the cavity 10.

[0068] It should be understood that the aforementioned "levelness and / or centering" means that this application can detect levelness, centering, and both. Levelness primarily refers to the parallelism of an object's plane, surface, or axis relative to the horizontal plane of the earth; that is, the object's surface or axis is parallel to the horizontal plane. Centering primarily refers to the degree to which the axis or center point of an object, such as a body of revolution or an object with an axis of symmetry, lies on the same straight line; it mainly refers to the collinearity of the motion axes or geometric centers of multiple subsystems to ensure zero positional deviation of objects such as wafers during transport and processing.

[0069] Therefore, through the arrangement of the multiple sets of ranging sensors 20 described above, the horizontality and centering of the object being measured within the cavity 10 can be detected online. Furthermore, it can detect not only the (static) centering and horizontality of the object being measured, but also the (dynamic) centering and horizontality during movement. This can meet process requirements and protect hardware safety, reducing or avoiding problems such as deviations in process results or damage to hardware caused by failure to meet horizontality or centering requirements.

[0070] In some embodiments, the ranging sensor 20 is selected from a laser ranging sensor.

[0071] A laser rangefinder is a high-precision, non-contact sensor that uses laser technology to measure the distance to objects. It primarily calculates distance accurately by emitting a laser beam and receiving the reflected signal. Laser rangefinders are characterized by high precision, non-contact measurement, and fast response. They are relatively simple to install and have low long-term maintenance costs. Utilizing laser rangefinders, their precision limits, non-contact characteristics, light-speed response, and intelligent integration helps reduce overall operating costs.

[0072] It should be understood that there are various technological principles for laser ranging sensors, such as time-of-flight method, phase shift method, and triangulation method. Different working principles can correspond to different structural designs. The embodiments of this application do not impose special restrictions on the specific structure of the laser ranging sensor.

[0073] As an example, a control device 30 is provided on the outside of the cavity 10. The control device 30 is signal-connected to the laser rangefinder 20 and is used to receive and process the signals transmitted by the laser rangefinder. In this embodiment, an integrated plate of the laser rangefinder can be provided inside the cavity 10, and a control device 30 for the laser rangefinder can be provided outside the cavity 10 and signal-connected to the integrated plate of the laser rangefinder. This allows for power supply to the laser rangefinder and also provides functions such as laser emission, laser reception, signal processing, interface, and output. For example, the control device 30 may include a power supply, a laser receiving unit, a signal or image or data processing unit, an interface, and an output unit. The control principle or structure of the control device 30 can refer to relevant technologies and adopt known structures.

[0074] This method utilizes the propagation characteristics of laser light (constant speed of light) to measure the distance between a sensor and a target. The core idea is to accurately measure the time required for the laser signal to travel to and from the target, and then calculate the distance using the speed of light.

[0075] refer to Figure 8 As shown, exemplarily, a laser rangefinder may include a housing unit 210, a rotating unit 220 (rotation scanning unit), and a laser emitting unit 230. The rotating unit 220 and the laser emitting unit 230 can be disposed within the housing unit 210. The laser emitting unit 230 can emit a laser detection signal and measure the distance between itself and the target object by receiving the echo signal scattered by the target object. The rotating unit 220 can rotate to illuminate the laser at any angle. The rotating unit 220 can be connected to the laser emitting unit 230. Optionally, the rotating unit 220 can also be connected to a motor, driving the rotating unit 220 to rotate. Furthermore, the rotating unit 220 can drive the laser emitting unit 230 to rotate, thereby driving the laser emitting unit 230 to rotate according to a predetermined ranging angle. The rotating unit 220 and the laser emitting unit 230 can also be signal-connected to the aforementioned control device 30.

[0076] It should be understood that the above exemplary description of the structure of the laser rangefinder sensor mainly includes a housing unit 210, a rotation unit 220, a laser emitting unit 230, and the aforementioned control device 30. However, the embodiments of this application do not limit the specific structure of the laser rangefinder sensor. As long as it can achieve laser illumination at any angle through rotation, and the distance from the laser rangefinder sensor to the hardware to be detected can be measured at any position by controlling the angle of the laser rangefinder sensor.

[0077] refer to Figure 6 or Figure 7 As shown, in some embodiments, the number of multiple sets of ranging sensors 20 is ≥3 sets; as an example, the number of multiple sets of ranging sensors 20 can be 3 sets, 4 sets, 5 sets or more.

[0078] Preferably, the number of groups of ranging sensors 20 in the embodiments of this application is 3 to 6 or 3 to 5.

[0079] By setting up multiple sets of ranging sensors 20, different components can be detected accordingly; alternatively, multiple sets of ranging sensors 20 can also be used to detect the levelness of the same component. For example, in the height direction of the cavity 10, at least one set of ranging sensors 20 can be set at the lower part, at least one set of ranging sensors 20 can be set in the middle part, and at least one ranging sensor 20 can be set at the upper part. Thus, the ranging sensors 20 at the lower part of the cavity 10 can be used to monitor the alignment and levelness of the base 50 within the cavity 10; the ranging sensors 20 in the middle part of the cavity 10 can be used to monitor the movement trajectory of the wafer, or to detect the installation alignment and levelness of the wafer; the ranging sensors 20 at the upper part of the cavity 10 can be used to monitor the alignment and levelness of the target material 40; furthermore, the ranging sensors 20 at corresponding positions can also be used to monitor the alignment and levelness of other process components 70 within the cavity 10, such as the deposition ring 730, the shielding ring 720, and the shielding liner 710.

[0080] Among the multiple sets of ranging sensors 20 mentioned above, each set can independently analyze data, and the overall status can be judged by the control device 30.

[0081] In some embodiments, the distance between two adjacent sets of ranging sensors 20 in the height direction of the cavity 10 is 5cm to 10cm; for example, this distance can be 5cm, 6cm, 7cm, 8cm, 9cm, 10cm, etc. By controlling the distance between two adjacent sets of ranging sensors 20 within this range, it is beneficial to detect the components inside the cavity 10. If the distance is too small, it will cause waste and increase costs; if the distance is too large, it may affect the detection results.

[0082] Optionally, the spacing between two adjacent sets of ranging sensors 20 can be the same or different, preferably the same, which can improve the uniformity of the arrangement and make it easier to detect the levelness and centering of each component.

[0083] In some embodiments, each group of ranging sensors 20 includes ≥4 ranging sensors 20; as an example, each group of ranging sensors 20 may include 4, 5, 6 or more ranging sensors 20.

[0084] Preferably, in the embodiments of this application, each group of ranging sensors 20 includes 4 ranging sensors 20.

[0085] In some embodiments, the cavity 10 includes a bottom wall and multiple side walls, which are connected in sequence and arranged around the bottom wall to form a process cavity. An angle structure 101 is formed between adjacent side walls, and each ranging sensor 20 in each group is located at each angle structure 101.

[0086] As an example, the cavity 10 is rectangular or cubic in shape, including four side walls (front, back, left, and right), thus forming four angled structures 101. Each set of ranging sensors 20 includes four ranging sensors 20, which can be respectively disposed at the four angled structures 101. Furthermore, at each angled structure 101, starting from the bottom of the cavity 10, an independent ranging sensor 20 is installed at intervals of 5cm to 10cm, thereby forming multiple sets of ranging sensors 20 in the height direction of the cavity 10.

[0087] With this configuration, by placing ranging sensors 20 at each of the included angles within the cavity 10 and forming multiple groups at different heights, it is possible to detect each component within the cavity 10 and achieve omnidirectional illumination and detection.

[0088] For example, the ranging sensor 20 is a laser ranging sensor, which can rotate to illuminate the laser at any angle. By controlling the angle of the laser ranging sensor, the distance from the laser ranging sensor to the hardware to be detected can be measured at any position. Furthermore, by comparing the distances to laser ranging sensors at the same horizontal height, it can be determined whether each piece of hardware is installed in the center, and whether the hardware has shifted during movement can be detected online.

[0089] The aforementioned control of the laser rangefinder sensor angle is mainly achieved by the control device 30 outside the cavity 10 sending an angle adjustment command to the laser rangefinder sensor inside the cavity 10, specifying the three-dimensional coordinates of the target detection position. The rotation unit 220 of the laser rangefinder sensor has a built-in stepper motor or servo motor, which drives the rotation axis after receiving the command to achieve 360° horizontal adjustment without dead angles. The vertical tilt angle of the laser emitting unit 230 is adjusted by the pitch mechanism (not shown in the figure, but includes this function) to cover targets at different heights. The rotation position can be monitored in real time by an encoder or angle sensor and compared with the control command to form a closed-loop control to ensure angle accuracy (error < 0.1°). For moving components, the control device 30 can predict the trajectory based on the real-time position and dynamically adjust the laser angle to maintain continuous tracking (e.g., updating the angle 10 times per second when the wafer is translated).

[0090] Optionally, the laser rangefinder sensor in this application embodiment may have two working states or modes, one of which is static detection (such as for detecting static components such as target 40 and fixed base 50), and the other is dynamic detection (such as for detecting moving wafers, moving base 50, and other dynamic components).

[0091] When performing static inspection of static components, each laser rangefinder 20 rotates to scan the surface of the component (part) and measures the distance between the four corners of the same height layer. If the distances are consistent, it indicates that the component is centered and the process is allowed; if the distances deviate, it indicates that the component is offset and the process is prohibited.

[0092] When performing dynamic detection of dynamic components, the laser rangefinder sensor tracks the moving components (parts) in real time and measures distance at high frequency. If the movement trajectory is stable, the process continues; if the trajectory changes abruptly, the machine stops immediately.

[0093] The working principle of this laser rangefinder is mainly to calculate the eccentricity and tilt angle of the component by comparing the laser emission angle (controlled by the rotation unit 220) and reflection distance with the data of the four corners of the same layer (i.e., the same group). In addition, multiple rangefinders detect simultaneously to ensure the reliability of the levelness judgment.

[0094] In this application, the cavity 10 is provided with a test object, which can be of various types. For example, in some embodiments, the test object includes a target 40, which is located at the upper end of the cavity 10.

[0095] Optionally, the object under test includes a base 50, which is located at the lower end of the cavity 10. Along the height direction of the cavity 10, the base 50 is disposed opposite to the target 40, and the base 50 and the target 40 are disposed facing each other within the cavity 10. The base 50 can be used to support a substrate 60, such as a wafer.

[0096] Optionally, the object under test includes a substrate 60, which is located on a base 50 inside the cavity 10.

[0097] Optionally, the object under test includes a process component 70, which includes a shielding liner 710, a shielding ring 720, and a deposition ring 730. The shielding liner 710 is disposed inside the cavity 10, the shielding ring 720 is vertically disposed on the shielding liner 710, and the deposition ring 730 is disposed around the base 50 inside the cavity 10.

[0098] Therefore, in the semiconductor process chamber of this application embodiment, the chamber 10 is the basic component of the process chamber, which can provide a mounting base for the target 40, the base 50, and process components 70 such as the deposition ring 730 and the shielding ring 720. The aforementioned process components 70, such as the base 50, the target 40, the deposition ring 730, and the shielding ring 720, are all disposed within the chamber 10. On the one hand, the chamber 10 can provide a space to accommodate the process components 70, such as the base 50, the target 40, the deposition ring 730, and the shielding ring 720. On the other hand, it can also provide protection for the process components 70, such as the base 50, the target 40, the deposition ring 730, and the shielding ring 720.

[0099] The objects to be tested within the cavity 10 include, but are not limited to, the target 40, the base 50, the substrate 60 (such as a wafer), and the process components 70 such as the deposition ring 730, the shielding ring 720, and the shielding liner 710; the base 50 and the substrate 60 may have two states, namely static and dynamic, such as static when installed or when preparing to perform a process, or dynamic when performing a process.

[0100] The aforementioned deposition ring 730 can be arranged around the base 50 to ensure that the wafer can fully contact the bearing surface of the base 50, and can also provide a certain degree of radial restraint for the wafer. The aforementioned shielding ring 720 can shield the reactants to prevent reactants (such as deposition particles) from entering the bottom area of ​​the cavity 10 and causing contamination. The aforementioned shielding liner 710 inside the cavity 10 can be arranged around the base 50 to shield the inner wall of the cavity 10 located around the base 50, thereby effectively preventing reactants from contacting the inner wall of the cavity 10 and causing contamination. Furthermore, there is a gap between the inner edge of the shielding liner 710 and the base 50 and deposition ring 730. This gap can be blocked by the shielding ring 720, thereby effectively preventing reactants from entering the lower area of ​​the cavity 10 through the gap and causing contamination. Therefore, the shielding ring 720 can be disposed within the shielding liner 710 of the cavity 10, so that the shielding liner 710 supports the shielding ring 720. Furthermore, the shielding ring 720 can also be used to shield the edges of the wafer, protecting the edge areas of the wafer from reactant contamination during semiconductor processing. Accordingly, at least a portion of the shielding ring 720 extends to the edge area of ​​the base 50 to shield the edge area of ​​the base 50, thereby shielding the corresponding area of ​​the wafer placed on the base 50 to protect the corresponding area of ​​the wafer from reactant contamination during semiconductor processing.

[0101] Optionally, in order to adjust the relative distance between the shielding ring 720 and the base 50 or the wafer, the shielding ring 720 can be flexibly disposed on the shielding liner 710. In this way, in the non-process state, the shielding liner 710 supports the shielding ring 720, while in the process state, the shielding ring 720 can be separated from the shielding liner 710 to ensure that the process gas can reach the wafer surface from the gap between the shielding ring 720 and the shielding liner 710, and to ensure that there is an appropriate distance between the shielding ring 720 and the wafer to meet the process requirements.

[0102] Optionally, to meet the needs of different working conditions, the base 50 can move up and down within the cavity 10 to switch between process and non-process positions. Based on this, a lifting mechanism 80 can also be provided within the cavity 10. This lifting mechanism 80 is connected to the base 50 and is used to drive the base 50 to move up and down, thereby meeting the positional requirements of the base 50 under different working conditions.

[0103] Optionally, the semiconductor process chamber may also be equipped with conventional components such as an upper electrode 910, a magnetron 920, and a motor 930. This embodiment does not limit this and will not describe it in detail here.

[0104] Therefore, through the arrangement of the above-mentioned multiple sets of ranging sensors 20, the embodiments of this application can be used to detect the levelness and / or alignment of the target material 40, base 50, substrate 60 (such as wafer), process components 70 such as deposition ring 730, shielding ring 720 and shielding liner 710 inside the cavity 10, which can ensure the process results and hardware safety.

[0105] Accordingly, embodiments of this application also provide a method for detecting levelness and / or centering, applied to the semiconductor process chamber as described above, the method comprising:

[0106] The distances between each distance sensor 20 and the corresponding edge of the object being measured are acquired using multiple distance sensors 20 in each group. The acquired distance values ​​are then compared to determine whether the centering of the object meets the requirements; and / or,

[0107] Multiple sets of distance sensors 20 are used to obtain the distance between each set of distance sensors 20 and the edge of the object at different heights. The multiple sets of distance values ​​are compared to determine whether the levelness of the object meets the requirements.

[0108] It should be understood that the levelness and / or centering detection method of this application utilizes the aforementioned semiconductor process chamber, and therefore possesses at least all the features and advantages of the aforementioned semiconductor process chamber; the relevant hardware aspects of the levelness and / or centering detection method can be referred to the description in the preceding semiconductor process chamber section, and will not be repeated here.

[0109] In this embodiment of the application, multiple sets of ranging sensors 20 are provided in the cavity 10. The use of multiple sets of ranging sensors 20 to detect the levelness and / or centering of the object being measured mainly includes: using multiple ranging sensors 20 in the same set to detect the centering of the object being measured, and using the synergistic effect of multiple sets of ranging sensors 20 to detect the levelness of the object being measured.

[0110] As an example, each group of ranging sensors 20 includes four ranging sensors 20, which are respectively located at the four corner structures 101. For centering detection, the distances at the four corners at the same height are compared, that is, the distances measured by the four ranging sensors 20 at the four corners of the same group are compared. These four sensors (at the four corner structures of the chamber) at the same horizontal height simultaneously measure the distance to the edge of the object being measured. Multi-position measurement can be achieved by adjusting the angle using the rotation unit 220 in the laser ranging sensor 20. If the distance values ​​at the four corners are equal (or the deviation is ≤ threshold), the component is located at the center of the chamber, thus satisfying centering. If the distance at one corner increases significantly while the distance on the opposite side decreases, the component shifts in the direction of increasing distance, indicating that centering is not satisfied.

[0111] For levelness detection, multiple sets of distance sensors 20 are required to work together. For example, a set of distance sensors 20 can be arranged every 5cm to 10cm along the height of the cavity 10. In a static state, if the distances at the four corners of different height layers of the same component are consistent, it indicates that there is no tilt, and the static levelness can be judged to meet the requirements. During movement, if the distance of a certain layer changes abruptly while the distances of other layers remain unchanged, it indicates that the object being measured is tilted or shifted, and does not meet the levelness requirements.

[0112] In some embodiments, the method includes two states: a static state and a dynamic state. In the static state, the semiconductor process chamber is in a state of preparation for process execution, and the object under test is a static component. In the dynamic state, the semiconductor process chamber is in a state of process execution, and the object under test is a dynamic component.

[0113] Optionally, static components may include a target 40, a process assembly 70, and a stationary base 50, while dynamic components may include moving substrates 60, such as wafers, moving bases 50, and other components.

[0114] refer to Figure 9 As shown, the method for detecting levelness and / or neutrality, in the context of static component inspection, includes the following steps:

[0115] S101, The system has detected that the chamber (semiconductor process chamber) is ready to execute the process;

[0116] S102. Use a ranging sensor, such as a laser ranging sensor, to detect the centering and levelness of each component (i.e., each object being measured).

[0117] S103. Determine whether the centering and levelness of the object being measured meet the requirements.

[0118] S104. If the requirements are met, the semiconductor process chamber will execute the process; if the requirements are not met, the semiconductor process chamber will not execute the process.

[0119] Therefore, in terms of the levelness or centering detection of static components, when the system detects that the chamber is ready to execute a process, the laser rangefinder can continuously adjust the laser irradiation angle and compare the distance of the laser sensor at the same horizontal height to detect the centering and levelness of each component, that is, each measured object. The system determines whether the centering and levelness of each measured object meet the requirements. If the requirements are met, the chamber executes the process; if the requirements are not met, the chamber does not execute the process.

[0120] Specifically, in some embodiments, in step S102, in a static state, i.e., when detecting a static component, the ranging sensor measures the distance between the ranging sensor and the edge of the object being measured by rotating and scanning. For example, a laser ranging sensor rotates 360° to scan the edge of the component, and uses the same group of ranging sensors to measure the distance between the four corners of the same height layer to determine whether the centering or levelness (multiple groups working together) requirements are met.

[0121] It should be understood that in static inspection, the triggering time is mainly during the process preparation and startup phase. Static inspection primarily utilizes a laser rangefinder to scan the edge of the component in a 360° rotation, and uses rangefinders in the same group to measure the distances at the four corners of the same height layer. The logic for determining whether the requirements are met mainly involves comparing whether the four corner distance values ​​are consistent or have a certain deviation. If the distance values ​​are consistent or the deviation is less than or equal to a threshold, the requirements are considered met; if the deviation is greater than the threshold, the requirements are considered not met, meaning there is an offset, and process startup must be prohibited.

[0122] The laser rangefinder operates differently during static detection and dynamic monitoring. During static detection, the laser rangefinder scans the entire angle to determine a reference position. During dynamic detection, the laser rangefinder tracks a specific area, monitoring motion stability in real time.

[0123] Specifically, in some embodiments, in step S103, determining whether the alignment of the measured object meets the requirements in a static state includes: obtaining the difference between different distance values ​​at the same horizontal height; if the maximum difference is ≤ a threshold (e.g., less than 0.1 mm), the alignment of the measured object meets the requirements; otherwise, it does not. For example, at the same horizontal height, four laser rangefinders at the four included angle structures 101 of the same group perform rotational scanning measurements, comparing the differences between these distance values; if the maximum deviation is ≤ a threshold (e.g., less than 0.1 mm), the alignment of the measured object meets the requirements; if any distance deviation is > a threshold, the alignment does not meet the requirements, that is, the measured object has shifted.

[0124] It should be noted that the threshold setting can be selected based on the process accuracy requirements. For example, if the semiconductor processing equipment allows an offset of <0.05mm, the threshold can be set to 0.05mm; or in some cases, it can be set to 0.1mm. The specific setting of the threshold is not limited in the embodiments of this application, and can be selected based on the process accuracy requirements.

[0125] In step S103, determining whether the levelness of the measured object meets the requirements in a static state includes: acquiring multiple sets of distance values ​​at different height levels. Each set of distance values ​​includes the distances from different distance sensors at the same horizontal height to the corresponding edges of the measured object. If the distance changes are consistent across different height levels, the levelness of the measured object meets the requirements; otherwise, it does not. For example, multiple sets of laser distance sensors are used to detect the same measured object. The four laser distance sensors at the four corner structures 101 of the same set perform rotational scanning measurements, and multiple sets work together. If the distances at the four corners of the measured object are consistent across different height levels, or if its levelness deviation is ≤0.05°, it indicates no tilt, and the static levelness meets the requirements. Conversely, if the gradient of multiple sets of distance values ​​for the same measured object is abnormal in the vertical direction, the levelness fails, i.e., tilting occurs, and the levelness requirement is not met.

[0126] refer to Figure 10 As shown, the method for detecting levelness and / or neutrality, in the context of detecting dynamic components, includes the following steps:

[0127] S201. The system has detected that a process is being performed in the chamber (semiconductor process chamber);

[0128] S202. Use a ranging sensor, such as a laser ranging sensor, to detect the centering and levelness of each component (i.e., each object being measured) during the motion process.

[0129] S203. Determine whether the centering and levelness of the measured object meet the requirements during the motion process;

[0130] S204. If the requirements are met, the semiconductor process chamber continues to execute the process; if the requirements are not met, the semiconductor process chamber stops executing the process.

[0131] Therefore, in terms of leveling or centering detection of dynamic components, the system detects that the chamber is performing a process, and the laser rangefinder detects the centering and leveling of each measured object during the movement. The system determines whether the centering and leveling of each measured object during the movement meet the requirements. If the requirements are met, the process chamber continues to perform the process; if the requirements are not met, the process chamber stops performing the process.

[0132] Specifically, in some embodiments, in step S202, in a dynamic state, that is, when detecting a dynamic component, the ranging sensor dynamically tracks the object being measured and samples at a frequency of not less than 10 times / second to record the distance of each point on the motion trajectory of the object being measured.

[0133] It should be understood that in dynamic detection, the triggering timing is mainly real-time monitoring during process execution. In dynamic detection, the laser rangefinder dynamically tracks the moving object under test, using a high-frequency sampling method (e.g., 10 times / second) to record the distance of each point on the motion trajectory. The logic for determining whether the requirements are met mainly analyzes the real-time changes in the distance within the same layer. If the trajectory changes abruptly (e.g., a sudden increase in distance on one side), it is determined to be tilt / offset, i.e., the requirements are not met, and the machine needs to be stopped immediately.

[0134] In this dynamic detection, the laser rangefinder mainly uses local tracking and real-time monitoring of motion stability for monitoring.

[0135] Specifically, in some embodiments, in step S203, determining whether the centering of the measured object meets the requirements in a dynamic state includes: if the distances measured by different distance measuring sensors at the same horizontal height change synchronously and smoothly, then the centering of the measured object meets the requirements; if the distance measured by any distance measuring sensor increases or decreases suddenly, then the centering of the measured object does not meet the requirements.

[0136] In step S203, in the dynamic state, determining whether the levelness of the measured object meets the requirements includes: if the variance of the trajectory measured by different ranging sensors at the same horizontal height is less than or equal to a predetermined value, then the levelness of the measured object meets the requirements; otherwise, the requirements are not met.

[0137] In this dynamic detection, to determine whether the centering and levelness of the measured object meet the requirements, it is necessary to compare the distance changes measured by four laser rangefinders in the same group at the same horizontal height, or compare the distance changes at different height levels, i.e., different groups. If the distance changes at the four corners of the same group at the same horizontal height are synchronous and stable, or the trajectory variance is ≤ a predetermined value, it indicates that there are no abrupt changes and the centering or levelness requirements are met. If the distance on one side increases or decreases suddenly (e.g., fluctuations > 1mm), a real-time offset has occurred. Or if the distance changes at different height levels are not synchronous, tilting or swaying has occurred, and the centering or levelness requirements are not met.

[0138] It should be understood that the dynamic tolerance setting, such as the variance threshold of the dynamic trajectory, is more lenient than the static threshold. For example, the variance threshold of the dynamic trajectory can be 0.2mm, but continuous monitoring is required.

[0139] Therefore, based on the above settings, the present invention can detect the alignment and levelness of each component installed in the chamber online, as well as the alignment and levelness during the movement process, and determine in real time whether the next action can be carried out, thereby ensuring the process results and hardware safety.

[0140] Based on the aforementioned semiconductor process chamber, in some embodiments, this application also provides a semiconductor processing apparatus that includes the aforementioned semiconductor process chamber.

[0141] The semiconductor processing equipment may also include a processor and a memory, the memory for storing computer programs, and the processor for running the computer programs to enable the semiconductor processing equipment to perform the aforementioned level and / or centering detection methods.

[0142] In some embodiments, this application provides a computer-readable storage medium storing computer instructions that, when executed by a controller, implement the levelness and / or centering detection methods as described above.

[0143] The specific embodiments of the computer-readable storage medium of the present invention are basically the same as the embodiments of the above-described methods for detecting levelness and / or neutrality, and will not be repeated here.

[0144] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A semiconductor process chamber, characterized in that, include: A cavity, wherein the object to be measured is disposed within the cavity; Multiple sets of ranging sensors are disposed on the inner sidewall of the cavity. The multiple sets of ranging sensors are spaced apart along the height direction of the cavity. Each set of ranging sensors includes multiple ranging sensors. The multiple ranging sensors are arranged spaced apart along the circumference of the cavity, and the multiple ranging sensors in each set are on the same horizontal plane. The levelness and / or centering of the object being measured are detected using multiple sets of the aforementioned ranging sensors; When using multiple sets of distance measuring sensors to detect the levelness of the object being measured, the distance between each set of distance measuring sensors and the edge of the object being measured at different heights is obtained, and the multiple sets of distance values ​​are compared to determine whether the levelness of the object being measured meets the requirements. When using multiple sets of ranging sensors to detect the centering of the object under test, the distance between each ranging sensor and the corresponding edge of the object under test is obtained by using multiple ranging sensors in each set. The multiple distance values ​​are compared to determine whether the centering of the object under test meets the requirements. The method for detecting levelness or neutrality includes two states, namely a static state and a dynamic state. In the static state, the semiconductor process chamber is in a state ready to execute the process, and the object under test is a static component; In the dynamic state, the semiconductor process chamber is in the process of executing a process, and the object under test is a dynamic component.

2. The semiconductor process chamber according to claim 1, characterized in that, The ranging sensor includes a laser ranging sensor; A control device is provided on the outside of the cavity. The control device is connected to the laser rangefinder sensor and is used to receive and process the signals sent by the laser rangefinder sensor.

3. The semiconductor process chamber according to claim 1, characterized in that, The number of groups of the ranging sensors is ≥3; And / or, the number of ranging sensors included in each group of ranging sensors is ≥4; And / or, in the height direction of the cavity, the distance between two adjacent sets of the ranging sensors is 5cm to 10cm; And / or, the cavity includes a bottom wall and multiple side walls, the multiple side walls are connected in sequence and arranged around the bottom wall to form a process cavity, and an angle structure is formed between adjacent side walls, and each of the ranging sensors in each group is located at each of the angle structures.

4. The semiconductor process chamber according to any one of claims 1 to 3, characterized in that, The object under test includes a target material, which is located at the upper end of the cavity. And / or, the object under test includes a base located at the lower end of the interior of the cavity; And / or, the object under test includes a substrate located on a base inside the cavity; And / or, the object under test includes a process component, the process component including a shielding liner, a shielding ring and a deposition ring, the shielding liner being disposed within the cavity, the shielding ring being vertically and vertically disposed within the shielding liner, and the deposition ring being disposed around a base within the cavity.

5. A method for detecting levelness and / or centering, applied to a semiconductor process chamber as described in any one of claims 1 to 4, characterized in that, The method includes: By using multiple ranging sensors in each group to obtain the distance between each ranging sensor and the corresponding edge of the object being measured, the obtained distance values ​​are compared to determine whether the centering of the object meets the requirements; or, Multiple sets of distance sensors are used to obtain the distance between each set of distance sensors and the edge of the object at different heights. The multiple sets of distance values ​​are compared to determine whether the levelness of the object meets the requirements. The method includes two states, namely a static state and a dynamic state. In the static state, the semiconductor process chamber is in a state ready to execute the process, and the object under test is a static component; In the dynamic state, the semiconductor process chamber is in the process of executing a process, and the object under test is a dynamic component.

6. The method for detecting levelness and / or neutrality according to claim 5, characterized in that, In the static state, the ranging sensor measures the distance between the ranging sensor and the edge of the object being measured by means of rotational scanning; And / or, in the dynamic state, the ranging sensor dynamically tracks the object being measured, samples at a frequency of not less than 10 times / second, and records the distances at each point on the motion trajectory of the object being measured.

7. The method for detecting levelness and / or neutrality according to claim 5 or 6, characterized in that, In the static state, determining whether the centering of the object being tested meets the requirements includes: Obtain the difference between different distance values ​​at the same horizontal height. If the maximum difference is less than or equal to the threshold, the centering of the measured object meets the requirements; otherwise, it does not meet the requirements. And / or, in the static state, determining whether the levelness of the object being measured meets the requirements includes: Multiple sets of distance values ​​at different height levels are obtained. Each set of distance values ​​includes the distance from different distance measuring sensors at the same horizontal height to the corresponding edge of the object being measured. If the distance changes are consistent across different height levels, the levelness of the object being measured meets the requirements; otherwise, it does not.

8. The method for detecting levelness and / or neutrality according to claim 5 or 6, characterized in that, In the dynamic state, determining whether the centering of the measured object meets the requirements includes: If the distances measured by different distance measuring sensors at the same horizontal height change synchronously and smoothly, then the centering requirement of the measured object is met; if the distance measured by any distance measuring sensor increases or decreases suddenly, then the centering requirement of the measured object is not met. And / or, in the dynamic state, determining whether the levelness of the measured object meets the requirements includes: If the variance of the trajectories measured by different ranging sensors at the same horizontal height is less than or equal to a predetermined value, then the levelness of the measured object meets the requirements; otherwise, the requirements are not met.

9. The method for detecting levelness and / or neutrality according to claim 5 or 6, characterized in that, In the static state, after determining whether the centering and / or levelness of the object being measured meet the requirements, the method further includes: If the requirements are met, the semiconductor process chamber will perform the process; if the requirements are not met, the semiconductor process chamber will not perform the process. And / or, in the dynamic state, after determining whether the centering and / or levelness of the measured object meet the requirements, the method further includes: If the requirements are met, the semiconductor process chamber continues to execute the process; if the requirements are not met, the semiconductor process chamber stops executing the process.

10. A semiconductor processing apparatus, characterized in that, Includes the semiconductor process chamber as described in any one of claims 1 to 4.

11. A computer-readable storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed by the controller, the levelness and / or centering detection method as described in any one of claims 5 to 9 is implemented.

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