Semiconductor element testing apparatus and semiconductor element testing method

Abstract

The invention relates to a semiconductor element testing device. And a gate driver circuit (113, 302) that applies a first on-voltage or a first off-voltage to the first gate terminal (gm) and applies a second on-voltage or a second off-voltage to the second gate terminal (gs). And voltage generation circuits (138m, 138s) that generate a first on-voltage and a first off-voltage, and a second on-voltage and a second off-voltage. The second element terminal (P) is connected to a first output terminal (the output terminal of the power supply device (132)), and the first element terminal (N) is connected to a second output terminal (the output terminal of the power supply device (132)). The first on voltage and the first off voltage are insulated from the second on voltage and the second off voltage.

Description

[0001] This invention application is a divisional application filed with a Chinese invention application that has entered the Chinese national phase based on the international application PCT application number PCT / JP2020 / 020629, entitled "Semiconductor Component Testing Apparatus and Test Method for Semiconductor Components". The application number of the Chinese invention application is 202080040749.2, and the application date is May 25, 2020. Technical Field

[0002] This invention relates to semiconductor components, electrical component testing apparatus for testing electrical components, and testing methods for electrical components. Background Technology

[0003] In life testing of electrical components such as semiconductor devices, the current flow is switched on and off. This is especially true for power semiconductor devices, where the current applied can reach hundreds of amperes. There are many types of electrical component tests, requiring adjustments to the wiring connections accordingly.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2017-17822 Summary of the Invention

[0007] The technical problem that the invention aims to solve

[0008] The constant current applied to test semiconductor components such as transistors is hundreds of amps or more, so the wiring needs to be made of thick wire with low resistance.

[0009] Thick wiring is rigid and lacks flexibility. Changes to thick wiring connections, especially for test projects, require a significant amount of time.

[0010] Solution to the above technical problems

[0011] The semiconductor device testing apparatus of the present invention uses a partition wall 214 to separate the space inside the semiconductor device testing apparatus in which transistors 117 and the like are arranged for testing from the arrangement location of the circuit board that generates control signals for the transistors 117 and the like.

[0012] A fork-shaped plug is used in the connection with the circuit board, etc. Connection and connection changes are performed by inserting the fork-shaped plug 205 through the opening 216 provided in the partition 214, so that the fork-shaped plug 215 makes electrical contact with the conductor plate 204 of the circuit board.

[0013] Invention Effects

[0014] By changing the position of the fork-shaped plug 205 inserted into the opening 216, the connection between the semiconductor element 117 and the test circuit can be easily changed. The connection work of the connection wiring 211 for each test item, or the connection change, is carried out by changing the position of the fork-shaped plug 205, thus greatly reducing the time for connection changes. Attached Figure Description

[0015] Figure 1 This is a block diagram and explanatory diagram of the semiconductor device testing apparatus of the present invention.

[0016] Figure 2 This is a schematic diagram of the semiconductor element testing apparatus of the present invention.

[0017] Figure 3 These are explanatory diagrams and equivalent circuit diagrams of the semiconductor components used in the experiment.

[0018] Figure 4 This is a block diagram and explanatory diagram of the semiconductor device testing apparatus of the present invention.

[0019] Figure 5 These are explanatory diagrams and structural diagrams of the semiconductor element testing apparatus of the present invention.

[0020] Figure 6 These are explanatory diagrams and structural diagrams of the semiconductor element testing apparatus of the present invention.

[0021] Figure 7 These are explanatory diagrams and structural diagrams of the heat pipe section of the present invention.

[0022] Figure 8 These are explanatory diagrams and structural diagrams of the heat pipe section of the present invention.

[0023] Figure 9 These are explanatory diagrams and structural diagrams of the mounting portion of the semiconductor element of the present invention.

[0024] Figure 10 These are explanatory diagrams and structural diagrams of the mounting portion of the semiconductor element of the present invention.

[0025] Figure 11 These are explanatory diagrams and structural diagrams of the mounting portion of the semiconductor element of the present invention.

[0026] Figure 12 These are explanatory diagrams and structural diagrams of the mounting portion of the semiconductor element of the present invention.

[0027] Figure 13 This is an explanatory diagram of the electrical connection portion of the semiconductor element testing apparatus of the present invention.

[0028] Figure 14 These are explanatory diagrams and structural diagrams of the electrical connection portion of the semiconductor element testing apparatus of the present invention.

[0029] Figure 15 These are explanatory diagrams and structural diagrams of the electrical connection portion of the semiconductor element testing apparatus of the present invention.

[0030] Figure 16 These are explanatory diagrams and structural diagrams of the electrical connection portion of the semiconductor element testing apparatus of the present invention.

[0031] Figure 17 These are explanatory diagrams and block diagrams of the semiconductor device testing apparatus of the present invention.

[0032] Figure 18 These are explanatory diagrams and structural diagrams of the semiconductor element testing apparatus of the present invention.

[0033] Figure 19 This is a timing diagram of the test method for the semiconductor element of the present invention.

[0034] Figure 20 This is an explanatory diagram of the circuit section of the semiconductor element testing apparatus of the present invention.

[0035] Figure 21 This is an explanatory diagram of the circuit section of the semiconductor element testing apparatus of the present invention.

[0036] Figure 22 This is an explanatory diagram of the semiconductor device testing method of the present invention.

[0037] Figure 23 This is an explanatory diagram of the semiconductor device testing method of the present invention.

[0038] Figure 24 This is an explanatory diagram of the semiconductor device testing method of the present invention.

[0039] Figure 25 This is an explanatory diagram of the semiconductor device testing method of the present invention.

[0040] Figure 26 This is an explanatory diagram of the semiconductor device testing method of the present invention.

[0041] Figure 27 These are block diagrams and timing diagrams of the semiconductor device of the present invention. Detailed Implementation

[0042] Hereinafter, the test apparatus and test method for electrical components according to embodiments of the present invention will be described with reference to the accompanying drawings.

[0043] In the embodiments described in the specification, IGBTs are mainly used as an example of power semiconductor devices that are electrical components.

[0044] This invention is not limited to IGBTs, but can be applied to various semiconductor components such as SiC transistors, MOSFETs, JFETs, thyristors, diodes, thermistors, and resetters.

[0045] Furthermore, this invention is not limited to semiconductor components; it can also be applied to electrical components other than semiconductor components such as resistors, capacitors, coils, crystals, and ZNRs.

[0046] The embodiments of the present invention can be combined with some or all of the various embodiments, and can be modified and combined.

[0047] Figure 2 These are structural diagrams and explanatory diagrams of the semiconductor device testing apparatus of the present invention. Figure 2 As shown in (a), the semiconductor device testing apparatus of the present invention includes a housing 210, a cooler (cooling / heating device) 136, a heating and cooling plate 134, and a circulating water pipe 135 that circulates between the heating and cooling plate 134 and the cooler 136. On the heating and cooling plate 134, transistors 117 and the like, which are used for testing, are disposed in close contact with the heating and cooling plate 134.

[0048] like Figure 2 As shown in (b), a device is provided in partition wall 217 that can be inserted into Figure 7 , Figure 9 , Figure 11 The opening 216 of the connecting structure 218 described in the figure. A hole for inserting the power cable 212 is provided in the partition wall 215.

[0049] The control frame 131 includes: a power supply device 132 that supplies test current and test voltage to the semiconductor element 117; and a control circuit 133 that controls the semiconductor element 117 or sets test conditions.

[0050] The control circuit 133 sets the test conditions and performs the test by changing the current Id, gate voltage Vg, and voltage Vce to make the temperature information Tj of the semiconductor element 117 reach a specified value.

[0051] The control circuit 133 controls the power supply device 132, which supplies test voltage or current to the semiconductor element 117 being tested.

[0052] When the temperature information Tj changes or changes to a specified value, it is determined that the semiconductor element 117 has deteriorated or its characteristics have changed. The test of the semiconductor element 117 is stopped, or the test method or control method is changed.

[0053] The temperature of the semiconductor element 117 is maintained at a predetermined or specified value by heating or cooling the circulating water in the cooler 136. Furthermore, the temperature of the semiconductor element, etc., is periodically varied according to the test conditions, and cooling or heating is performed in a constant manner.

[0054] As an example, the semiconductor device testing apparatus and semiconductor device testing method of the present invention can handle... Figure 3 The various semiconductor elements 117 and semiconductor modules 117 shown are as follows. Figure 3 The semiconductor element 117, etc., has terminals such as P-electrode terminals, O-electrode terminals, and N-electrode terminals to which a large current is applied or output.

[0055] Figure 3 These are schematic diagrams and equivalent circuit diagrams of semiconductor components. Figure 3 (a1) and (a2) are configurations with one transistor 117 and a diode Di.

[0056] Figure 3 (b1) and (b2) are configurations having transistor 117 (transistor 117m, transistor 117s) and diode Di (diode Dim, diode Dis).

[0057] Figure 3 (c1) and (c2) are configurations that connect multiple transistors for testing by connecting the terminals of semiconductor elements having transistor 117 (transistor 117m, or transistor 117s) and diode Di (diode Dim, or diode Dis).

[0058] Figure 3 (d1) and (d2) are configurations of transistor 117 (transistor 117m, transistor 117s) and diode D (diode Ds, diode Dm) having terminals independent of the transistor terminals.

[0059] Figure 3 (e1) and (e2) are configurations that connect multiple transistors to perform tests by connecting the terminals of a semiconductor element having a transistor 117 (transistor 117m or transistor 117s) and a diode D (diode Dm or diode Ds) having terminals independent of the transistor's terminals.

[0060] In the following embodiments, the main examples are illustrated. Figure 3 The semiconductor element 117 shown will be described.

[0061] Figure 1 This is a block diagram and explanatory diagram of the semiconductor device testing apparatus of the present invention.

[0062] The power supply unit 132 outputs a constant current for testing the transistor 117. The power supply unit 132 supplies power (current, voltage) synchronously with control signals from the control circuit board (controller) 111. The power supply unit 132 can be set to a maximum output voltage value.

[0063] The switching circuit 122 (SWa) has the function of turning on (supplying, applying) and turning off (blocking, opening) the supply of constant current output by the power supply device 132.

[0064] In the semiconductor device testing apparatus of the present invention, the power supply device 132 is not limited to one unit. Two or more power supply devices 132 may also be provided.

[0065] In an embodiment of the present invention, a fork-shaped plug is exemplified as the connector plug 205. Like the fork-shaped plug 205e connected to the collector terminal of the transistor 117 and the fork-shaped plug 205d connected to one terminal of the power supply device 132, the fork-shaped plug 205 is connected to one end of each connection wire 211 and each power supply wire 212, and then connected to the conductor plate 204.

[0066] It should be noted that while the conductor plate 204 is described as such in this specification and accompanying drawings, it is not limited to a plate and can also be rod-shaped. It can also be composed of multiple structures. As long as it can be joined with a structure such as the fork-shaped plug 205, it can be of any shape. For example, it can also be a socket, connector, or other structure. Alternatively, the conductor plate 204 can be shaped like a fork-shaped plug, and the fork-shaped plug 205 can be connected to the fork-shaped plug.

[0067] The present invention can be configured in any way as long as a fork-shaped plug 205 or the like is formed or configured on at least one terminal of the transistor 117 in which the test is carried out, and an electrical connection is made with the fork-shaped plug 205 and the conductor plate 204 or the like.

[0068] The fork-shaped plug 205 will be described as a fork-shaped plug that is inserted into a component or structure of a separated space such as partition wall 214. However, it is not limited to this. For example, the fork-shaped plug 205c may be connected to the conductor plate 204b, or the fork-shaped plug 205c may be inserted from the partition wall 214 to electrically connect to one terminal (emitter e) of the transistor 117.

[0069] The partitions 214, 215, and 217 of the semiconductor element testing apparatus of the present invention can be any type of partition, as long as they are used to divide or separate spaces or regions. They are suitable for various configurations or structures such as wall-shaped, plate-shaped, mesh-shaped, thin film-shaped, and foil-shaped.

[0070] The fork-shaped plug 205 can be any of the following components, structures, methods, forms, or approaches that enable it to be electrically connected to objects such as the conductor plate 204 by means of pressing, crimping, inserting, clamping, or fitting.

[0071] The test current Id is supplied to the transistor 117 by activating the power supply device 132. The power supply device 132 performs operation / non-operation (on / off) control based on signals from the control circuit board (controller) 111. Furthermore, the output and non-output of the current Id can be switched. The device control circuit board 209 is controlled by the control circuit board (controller) 111.

[0072] exist Figure 1 Among them, 117 transistors were tested. Figure 3 The transistor with diode Di shown in (a) will be used for illustration. The emitter terminal e of transistor 117 will be grounded for illustration. A gate driver circuit 113 is connected to the gate terminal g of transistor 117.

[0073] The sample connection circuit 203 is configured or formed with a gate driver circuit 113, a variable resistor circuit 125, a constant current circuit 118, and an operational amplifier (buffer circuit) 116.

[0074] The sample connection circuit 203 is separated from the device control circuit board 209 in a manner that allows it to be configured close to the transistor 117 being tested, and is electrically connected via connector 208.

[0075] The sample connection circuit 203 is connected to the transistor 117 via the connection pin 206 of the connector 202. The gate driver circuit 113 is configured with a short distance of less than 30 mm between it and the gate terminal g of the transistor 117. If the distance between the gate driver circuit 113 and the gate terminal g of the transistor 117 is too long, noise and other noises will overlap onto the gate terminal g, causing the transistor 117 to malfunction due to noise.

[0076] like Figure 1 As shown, a test signal is applied from the gate driver circuit 113 to the gate terminal g of the transistor 117. The gate driver circuit 113 has an operational amplifier circuit.

[0077] like Figure 5 As shown, the device control circuit board 209 is disposed in chamber B of the housing 210 of the semiconductor element testing apparatus. The housing 210 is equipped with a power supply device 132, a drive circuit system, a heating and cooling plate 134, etc.

[0078] The sample connection circuit 203 is positioned close to the transistor 117 being tested, and is therefore located in chamber C1 of the housing 210 of the semiconductor device testing apparatus. The sample connection circuit 203 is connected to a connector 208 located on the side of the housing 210. Wiring connected to the connection pins 206 of the connector 208 is connected to the device control circuit board 209 in chamber B.

[0079] The sample connection circuit 203 is connected to the device control circuit board 209 via the connection pin 206 of the connector 208. The sample connection circuit 203 is individually configured corresponding to each transistor 117 being tested, and the sample connection circuit 203 is configured to be easily removed via the connector 202, etc.

[0080] A constant current circuit 118 supplies a constant current Ic to the diode Di, which is configured or formed between the channels of transistor 117. An operational amplifier circuit 116 buffers the terminal voltage of diode Di (reducing output impedance) and outputs it as the Vi voltage. The Vi voltage is converted from analog to digital by a temperature measurement circuit 115.

[0081] The temperature measurement circuit 115 calculates the temperature information Tj of the transistor 117 based on the terminal voltage Vi and transmits it to the control circuit board 111. The temperature information is output from the connector 213 of the device control circuit board 209 to the mother board 207 and then sent to the control circuit board 111.

[0082] The gate driver circuit 113 applies a set frequency (on / off period) and a set on-state voltage to the gate terminal of the transistor 117. For example, as shown... Figure 27 As shown in (b), the turn-on / turn-off period of transistor 117 is tcycle, and the turn-on time is ton.

[0083] Transistor 117 operates / disconnects (turns on / off) based on the Vg signal voltage output from gate driver circuit 113. During the period when transistor 117 is turned on, current Id flows between the channels of transistor 117.

[0084] The gate driver circuit 113 has a variable resistor circuit 125. The resistance value Vr of the variable resistor circuit 125 is configured to be a constant voltage or a voltage that varies with time between 0 (Ω) and 500 (Ω).

[0085] The gate driver circuit 113 can set the slope (rise time Tr) and the slope (fall time Td) of the rising edge waveform of the gate electrical signal applied to the gate terminal g of the transistor 117.

[0086] exist Figure 1In the above, the resistance value Vr of the variable resistor circuit 125 of the gate driver circuit 113 is variable, but not limited to this. For example, the variable resistor circuit 125 can also be set as an external resistor.

[0087] A constant current circuit 118 allows a predetermined constant current Ic to flow. This constant current Ic is applied to diode Di. By monitoring the terminal voltage of diode Di, the temperature change of transistor 117 can be measured or observed.

[0088] To prevent transistor 117 from overheating due to constant current Ic, the constant current Ic is made to be a sufficiently small current value compared to the constant current Id flowing through the channel of transistor 117.

[0089] Specifically, the constant current Ic is set to be less than 1 / 1000 of the current Id flowing through transistor 117 during the test. Preferably, the current Ic flowing through transistor 117 is 1 × 10⁻⁶ of the current Id. 6 1 or more and 1×10 4 Below 1. The constant current Ic is above 0.1mA and below 100mA.

[0090] The channel current Id is varied, and the diode Di voltage (the voltage between the collector and emitter terminals of transistor 117) is measured to determine the temperature coefficient K. The determined temperature coefficient K is stored in the temperature measurement circuit 115.

[0091] As a temperature coefficient K, transistor 117 is brought to a predetermined temperature by heating cooling plate 134, a constant current Ic flows through diode Di, and the terminal voltage is measured. By varying the predetermined temperature and measuring the terminal voltage of diode Di, the terminal voltage of diode Di relative to the temperature of transistor 117 can be obtained. Therefore, the temperature coefficient K of transistor 117 can be determined based on the terminal voltage of diode Di relative to the temperature.

[0092] A constant current Ic flows through diode Di when the channel current Id is not flowing. That is, when transistor 117 is not turned on, a constant current Ic flows to measure the voltage between the terminals of diode Di.

[0093] The operational amplifier circuit (buffer circuit) 116 outputs the diode Di's terminal voltage Vi (terminal c - terminal e).

[0094] Furthermore, the operational amplifier circuit 116 is not limited to being composed of operational amplifier elements. It can be any circuit as long as the output impedance is lower than the input impedance.

[0095] The calculated temperature information Tj is sent to the control circuit board (controller) 111. If the temperature information Tj reaches or exceeds the specified set value, the control circuit board (controller) 111 determines that the transistor 117 has entered a specified stress state or deterioration state, and performs control changes for the test or stops the test, etc.

[0096] exist Figure 1 In the embodiments described above, the switching circuits Ssa124a and Sab124b use the notation for switching circuits. Examples of switching circuit 124 include transistors, mechanical relays, phototransistors, photodiode switches, and photoelectric MOS relays.

[0097] Figure 4 This is an equivalent circuit diagram and explanatory diagram of the semiconductor device testing apparatus according to the first embodiment of the present invention. In this embodiment, as... Figure 4 As shown in (b), the switching circuits such as Ssa124a and Sab124b use power MOSFET124. The channel voltage (Vsd) of the MOSFET is relatively small, therefore it is preferred.

[0098] The channel voltage (Vsdb) when power MOSFET 124b is turned on is selected to be lower than the channel voltage (Vsda) when power MOSFET 124a is turned on. That is, the channel voltage (Vsdb) when power MOSFET 124b is turned on is smaller than the channel voltage (Vsda) when power MOSFET 124a is turned on. This is to ensure a stable flow of current Im when the switching circuit 124b is turned on and a short circuit is formed between the terminals of the power supply device 132.

[0099] The switching circuit 124 is mounted or formed on the switching circuit substrate 201. The switching circuit 124 is connected to the conductor plate 204. As an example, the conductor plate 204 is a copper plate with a thickness of 5 mm and a width of 50 mm. As an example, the length of the conductor plate 204 is 250 mm.

[0100] Figure 5 , Figure 13 The diagram shows the fork-shaped plug 205 and its connection (contact) with the conductor plate 204.

[0101] Figure 13 (a) is a schematic diagram from above showing a state in which a conductor plate 204 is mounted on a switch circuit board (printed board) 201 on which switch circuits are formed, and a fork-shaped plug 205 is connected to the conductor plate 204. Figure 13 (b) is an explanatory diagram showing the conductor plate 204 with one end clamped by the fork plug 205.

[0102] like Figure 1As shown, two conductor plates 204 are mounted on the switch circuit board 201. The conductor plates 204 and the switch circuit board 201 are fixed with screws.

[0103] Electrical connection is achieved by mechanically engaging the fork-shaped plug 205 with the conductor plate 204. When the U-shaped portion of the fork-shaped plug 205 is inserted into the conductor plate 204, the fork-shaped plug 205 and the conductor plate 204 are well engaged.

[0104] like Figure 13 As shown, a connecting bolt 219 is installed on the fork-shaped plug 205. A connecting wire 211 is connected to the connecting bolt 219.

[0105] Figure 13 (b) shows Figure 13 The cross-section at AA' in (a) shows the conductor plate 204 and the fork-shaped plug 205 making contact at contact portions 220a and 220b formed on the fork-shaped plug 205. Contact portions 220 are made of phosphor bronze or nickel alloy and have spring-like characteristics. The surface of the contact portions 220 is plated with gold or silver. This plating improves the electrical stability of the connection portion 220.

[0106] like Figure 5 , Figure 6 As shown, the fork plug 205 and the conductor plate 204 are electrically connected by inserting the fork plug 205 through the opening 216 of the partition wall 214.

[0107] Figure 5 The arrangement of the components of the semiconductor device testing apparatus of the present invention is shown. The housing 210 of the semiconductor device testing apparatus has multiple parts. The lower part of the housing is divided into chamber A and chamber B. A power supply device 132 is arranged in chamber A. Chamber A and chamber B are separated by partition wall 215. Chamber C1 and chamber C2 are separated by partition wall 217.

[0108] The power supply unit 132, the switching circuit board 201, and the transistor 117 generate significant noise through repeated operation / non-operation. This noise can cause malfunctions in the circuit board and other components. Preventing malfunctions can be achieved by electrostatic and electromagnetic shielding of the partition walls between each compartment.

[0109] Electrostatic shielding and electromagnetic shielding are achieved by installing or forming conductive plates, metal plates, metal films, or metal mesh around or on the surface or inside of each room or partition wall.

[0110] Room C1 is equipped with Figure 2 The heating and cooling plate 134, circulating water pipe 135, etc. shown are shown, and the transistor 117 for testing is tightly arranged in the heating and cooling plate 134.

[0111] A water leakage sensor (not shown) is installed around the heating and cooling plate in chamber C1. The sensor is configured to activate and stop the semiconductor component testing equipment or issue an alarm when leakage occurs, such as in the case of circulating water (cooling medium).

[0112] A drainage channel (not shown) is formed around the heating and cooling plate 134. The configuration is such that when circulating water (cooling medium) leaks from the heating and cooling plate, the circulating water (cooling medium) flows into the drainage channel and is discharged outside the semiconductor device testing apparatus.

[0113] The heating and cooling plate 134 is mounted on a tray (not shown), which is configured to be detachable from the partition wall 214.

[0114] As described above, the partition wall 214 is configured such that even if the circulating water pipe 135 or the like is damaged, the circulating water (cooling medium) or the like will not leak into the lower chambers A and B.

[0115] A partition wall 215 is formed between chamber A, which is equipped with power supply device 132, and chamber B, which is equipped with drive circuit system. An electrostatic shielding plate or an electromagnetic shielding plate is provided in partition wall 215 to shield the noise of power supply device 132, so that the noise is not applied to drive circuit system in chamber B.

[0116] In an embodiment of the invention, a fork-shaped plug 205 is inserted into chamber C2 and connected to the conductor plate 204 in chamber B. An opening 216 for inserting the fork-shaped plug 205 is formed in the partition wall 214.

[0117] In an embodiment of the invention, the fork-shaped plug 205 is inserted from the top to the bottom. The invention is not limited thereto. For example, a conductor plate 204 may be configured in chamber C2, and the fork-shaped plug 205 may be inserted from chamber B to electrically connect the fork-shaped plug 205 to the conductor plate 204.

[0118] like Figure 13 As shown in (c), a connector 213 is mounted on the mother substrate 207. A control circuit board 111, a device control circuit board 209, and a switch circuit board 201 are mounted on the connector 213 on the mother substrate 207. The switch circuit board 201 is prepared according to the number of transistors 117 being tested. The number of switch circuit boards 201 mounted on the mother substrate 207 can be easily adjusted.

[0119] Temperature information Tj, voltage Vi, control signals for the variable resistor circuit 125, and control signals for the constant current circuit 118 are transmitted to the motherboard 207. In addition, power supply wiring and ground wiring for each circuit are formed and supplied to each circuit board via connector 213.

[0120] like Figure 13As shown in (c), the conductor plate 204 is arranged to extend from the switch circuit board 201. A fork-shaped plug 205 is connected to this extended portion.

[0121] The fork-shaped plug 205a is connected to the conductor plate 204a of the switch circuit board 201a. The power supply wiring 212 is connected to the switch circuit board 201a through the opening 216 of the partition 215.

[0122] like Figure 1 , Figure 5 As shown, the fork-shaped plug 205d is connected to the conductor plate 204c of the switch circuit board 201b. The power supply wiring 212 is connected to the switch circuit board 201b via the opening 216 of the partition wall 215. The fork-shaped plug 205b is connected to the conductor plate 204b of the switch circuit board 201a. The power supply wiring 212 is connected to the switch circuit board 201a via the opening 216 of the partition wall 215.

[0123] like Figure 1 , Figure 4 As shown, a switching circuit 124a is disposed between conductor plates 204d and 204c on the switching circuit substrate 201b, causing an electrical short circuit between conductor plates 204d and 204c. Through this short circuit, the current Id output by the power supply device 132 is supplied to the transistor 117 as a test current Id.

[0124] like Figure 4 As shown, a switching circuit 124b is disposed between conductor plates 204a and 204b of the switching circuit board 201a. By turning on the switching circuit 124b, a short circuit is formed between conductor plates 204a and 204b. Due to the short circuit, the current Id output by the power supply device 132 flows to ground as a discharge current Im. Therefore, no voltage is applied between the channels of the transistor 117, and no current flows through the transistor 117, thus preventing overvoltage and overcurrent from being applied to electrical components such as the transistor 117.

[0125] A fork-shaped plug 205c is connected to conductor plate 204b. A fork-shaped plug 205b is connected to conductor plate 204a. Additionally, a fork-shaped plug 205e is connected to conductor plate 204d. A fork-shaped plug 205d is connected to conductor plate 204c.

[0126] The fork-shaped plug 205 is made of metals such as aluminum. The fork-shaped plug 205 has a nickel-plated substrate and a silver-plated surface.

[0127] The fork-shaped plug 205 has a threaded groove, which enables the connecting wire 211 to be installed to the fork-shaped plug 205 using the connecting bolt 219.

[0128] Figure 5The figure shows two switch circuit boards 201a and 201b. The switch circuit board 201 is connected to the connector 213 of the mother board 207.

[0129] like Figure 5 , Figure 6 As shown, the fork-shaped plug 205c is inserted through the opening 216 of the partition wall 214 between chamber C2 and chamber B, and connects to the conductor plate 204b. The fork-shaped plug 205e is inserted through the opening 216 of the partition wall 214 between chamber C2 and chamber B, and connects to the conductor plate 204d.

[0130] The current flowing through the transistor 117 used in the experiment is as large as several hundred amperes, so the connecting wires 211 used are also relatively thick. Therefore, the thick connecting wires 211 and power wires 212 are relatively stiff. As a result, it is not easy to change the connection of the connecting wires 211 and power wires 212.

[0131] In the semiconductor device testing apparatus of the present invention, the fork-shaped plug 205 is inserted from chamber C2 into any opening 216 of partition wall 214. By changing the position of the opening 216 into which the fork-shaped plug 205 is inserted, it is possible to connect to any switching circuit board 201. Therefore, changing the connection with the switching circuit board 201 used according to the test conditions of transistor 117 does not require changing the wiring 211; only the position of the opening 216 into which the fork-shaped plug 205 is inserted needs to be changed. Furthermore, as... Figure 13 As shown in (c), the switch circuit board 201 only needs to change the position of the connector 213 that is connected to the mother board 207.

[0132] As described above, the switch circuit board 201 and the device control circuit board 209 connected to the mother board 207 are configured according to the test content and the number of electrical components 117 such as semiconductor components. In addition, the connection switching with the switch circuit board 201, etc. is implemented by changing the position of the fork plug 205 of the insertion partition 214.

[0133] like Figure 1 , Figure 4 , Figure 5 , Figure 6 As shown, connection wiring 211b, which is connected to transistor 117, is connected to fork-shaped connector 205c. Connection wiring 211a, which is connected to transistor 117, is connected to fork-shaped connector 205e. The semiconductor element 117 being tested can be removed from the test circuit by loading and unloading from fork-shaped connector 205c, fork-shaped connector 205e, and conductor plate 204.

[0134] like Figure 4As shown, the number of switch circuit substrates 201b that short-circuit the output of the constant current circuit 121 can correspond to the number of constant current circuits 121. For example, in the case where there is one constant current circuit 121 in the semiconductor device testing apparatus, there can be one switch circuit substrate 201b (switch circuit 124b).

[0135] The number of switch circuit boards 201b needs to correspond to the number of transistors 117 being tested. For example, if there are 12 transistors 117 being tested, it is preferable to prepare 12 switch circuit boards 201b. Specifically, the number of switch circuit boards prepared corresponds to the number of electrical components 117 being tested.

[0136] It is cost-effective to use the same substrate specifications for the switch circuit board 201a used to test electrical component 117 and the switch circuit board 201b used to short-circuit the output of power supply device 132. That is, the switch circuit boards 201 have a common structure.

[0137] Preferably, multiple transistors, etc., serving as switching circuits 124, are mounted on the switching circuit substrate 201. The more switching circuits 124 there are, the more the impedance that could cause a short circuit between the two conductor plates 204 can be reduced.

[0138] Figure 14 Figures (a) and (b) illustrate the state in which the fork-shaped plug 205 is inserted into the opening 216 of the partition wall 214. Figure 14 (a) is a view taken from the front of partition wall 214. Figure 14 (b) is a view taken from the back of partition wall 214.

[0139] As an example, in Figure 14 The conductor plate 204b is connected to a fork-shaped plug 205b and multiple fork-shaped plugs 205c (fork-shaped plugs 205c1 to 205c5). A fork-shaped plug 205e1 is connected to conductor plate 204d1, a fork-shaped plug 205e2 is connected to conductor plate 204d2, a fork-shaped plug 205e3 is connected to conductor plate 204d3, a fork-shaped plug 205e4 is connected to conductor plate 204d4, and a fork-shaped plug 205e5 is connected to conductor plate 204d5.

[0140] The switching circuit 124 on the switching circuit board 201 generates significant noise due to its on / off state. As a countermeasure, although... Figure 13 (c) is not shown, but a metal plate is placed between the two switch circuit boards 201 to function as a shield, so that the ground wire of the metal plate is grounded.

[0141] The heat generated by the switching circuit 124 is dissipated to the conductor plate 204. A heat sink (not shown) is mounted on the switching circuit 124. The ground terminal of the switching circuit 124 is connected to the ground of the switching circuit substrate 201. The heat of the conductor plate 204 is also dissipated through the grounded copper foil of the switching circuit substrate 201.

[0142] like Figure 1 , Figure 4 As shown, conductor plates 204a and 204b are mounted on the switch circuit board 201b. Conductor plate 204a is connected to fork-shaped plug 205a. Fork-shaped plug 205a is connected to the output terminal of power supply device 132. Conductor plate 204b is connected to fork-shaped plug 205b. Fork-shaped plug 205b is connected to the ground terminal of power supply device 132.

[0143] When the switching circuit 124b is on (closed), the output terminals of the power supply device 132 are short-circuited, and the short-circuit current Im flows to ground. Therefore, the output current of the power supply device 132 is not supplied to the transistor 117. When the switching circuit 124b is open, the output current Id of the power supply device 132 is supplied to the transistor 117.

[0144] Conductor plates 204c and 204d are mounted on the switch circuit board 201a. Conductor plate 204c is connected to fork-shaped connector 205d. Fork-shaped connector 205d is connected to the output terminal of power supply device 132. Conductor plate 204d is connected to fork-shaped connector 205e. Fork-shaped connector 205e is connected to the collector terminal of transistor 117 under test.

[0145] exist Figure 14 In this configuration, the connection wiring 211 installed on the fork-shaped plug 205 becomes complicated. In addition, the connection wiring 211 obstructs the insertion of the fork-shaped plug 205 into the opening 216.

[0146] like Figure 15 As shown, the present invention separates the column positions of the fork plugs 205 connected to the common conductor plate 204b from the column positions of the fork plugs 205 connected to one or more conductor plates 204a.

[0147] Figure 15 , Figure 16 These are accompanying drawings used to illustrate the technical concept of the present invention. Figure 15 As an example, a conductor plate 204b is configured to connect three or more fork-shaped plugs 205b and 205d. Multiple fork-shaped plugs 205b and multiple fork-shaped plugs 205d are mounted on the conductor plate 204b.

[0148] Conductor plates 204a1 to 204a6 are configured to connect fork-shaped plugs 205a and 205c, and fork-shaped plugs 205a and 205c are installed on each conductor plate 204a1 to 204a6.

[0149] Conductor plates 204a1 to 204a6 are arranged in a straight line. In addition, each conductor plate 204 is arranged in a manner that is approximately parallel to conductor plate 204b and conductor plate 204a.

[0150] Terminal 226a of transistor 117 is connected to fork-shaped plug 205b via connection wiring 211b. Terminal 226b of transistor 117 is connected to fork-shaped plug 205a via connection wiring 211a.

[0151] The first terminal of the switch circuit board 201 is connected to the fork plug 205d via the connection wiring 211d. The second terminal of the switch circuit board 201 is connected to the fork plug 205c via the connection wiring 211c.

[0152] Fork-shaped plugs 205a and 205c share electricity through conductor plate 204a, and fork-shaped plugs 205b and 205d share electricity through conductor plate 204b.

[0153] Each fork-shaped plug 205 is inserted into the opening 216, which is arranged in a straight line. Therefore, the fork-shaped plugs 205 are arranged in a straight line, and thus the connecting wires 211 are arranged in parallel. The semiconductor element 117 used for testing is also arranged in a straight line on the heating and cooling plate 134.

[0154] like Figure 16 As shown in (a), an opening 216b is formed in the fork-shaped plug insertion plate 241a, and an opening 216b is formed in the fork-shaped plug insertion plate 241b. The opening 216b of the fork-shaped plug insertion plate 241a is arranged along the conductor plate 204b.

[0155] Connecting wires 211a, 211b, 211c, and 211d are connected to each fork plug 205, and each connecting wire 211 is arranged in a generally parallel manner.

[0156] By configuring the connection wiring 211 in a roughly parallel position, such as Figure 14 The intersections with the connecting wiring 211 shown disappear, making it easy to insert the fork-shaped plug 205 into the opening 216. Therefore, it is easy to switch which of the transistors 117a to 117e to be tested by inserting or not inserting the fork-shaped plug 205 into the opening 216.

[0157] like Figure 16 As shown in (b), the fork-shaped plug insertion plate 241a and the fork-shaped plug insertion plate 241b are configured or formed to have a height H difference in the vertical direction.

[0158] An opening 216b is formed in the fork-shaped plug insertion plate 241a and fork-shaped plug insertion plate 241b. An opening 216a is formed in the partition wall 214. The fork-shaped plug 205 is inserted into the openings 216a and 216b, and is supported by the openings 216a and 216b and the conductor plate 204. Therefore, the support of the fork-shaped plug 205 is firm.

[0159] like Figure 16 As shown, connecting wires 211b and 211d are positioned at the lower level, while connecting wires 211a and 211c are positioned at the upper level. Therefore, the wiring positions of connecting wires 211b and 211d differ vertically, preventing crossings of the connecting wires 211. This facilitates the insertion, removal, and pressing of the fork-shaped plug 205 into the opening 216.

[0160] The above Figure 15 , Figure 16 The matters described herein can of course be applied to other embodiments of the present invention, or in combination with other embodiments.

[0161] For ease of illustration, Figure 6 The diagram shows a transistor 117. A connecting structure 218a is inserted into the opening 216a of the partition 217, and a connecting structure 218b is inserted into the opening 216b of the partition 217.

[0162] The semiconductor testing apparatus of the present invention arranges multiple semiconductor elements 117 on a heating and cooling plate 134 for testing. Therefore, as... Figure 2 As shown in (b), a plurality of openings 216 are formed in the partition wall 217.

[0163] Figure 2 (b) has n (n is a positive number greater than or equal to 1) openings 216. A connecting structure 218a1 is inserted into opening 216a1, and a connecting structure 218b1 is inserted into opening 216b1. A connecting structure 218a2 is inserted into opening 216a2, and a connecting structure 218b2 is inserted into opening 216b2. A connecting structure 218an is inserted into opening 216an, and a connecting structure 218bn is inserted into opening 216bn.

[0164] The connecting structure 218a is connected to the component terminal 226a of the transistor 117, and the connecting structure 218b is connected to the component terminal 226b of the transistor 117.

[0165] A connector 202 is connected to the terminal of transistor 117, and signal wiring 222 connected to connector 202 is connected to sample connection circuit 203. Signal wiring 235 of sample connection circuit 203 is connected to device control circuit board 209 via connector 208.

[0166] The partition walls (partition walls 214, 215, and 217) function to separate the various compartments (compartment C1, compartment C2, compartment A, and compartment B) and to prevent the inflow of outside air. In particular, compartment C1 may sometimes condense during low-temperature tests, thus allowing dry air to flow into compartment C1.

[0167] A fixing screw 221 is installed at the other end of the connecting structure 218, and the connecting wire 211 is connected to the connecting structure 218. A fork-shaped plug 205, which serves as a connecting component, is installed at the other end of the connecting wire 211.

[0168] The fixing screw 221 is not limited to a screw; it can be any component as long as it can electrically connect the connecting wire 211 to the connecting structure 218.

[0169] The sample connection circuit 203 is connected to the device control circuit board 209 via the connection pin 206 of the connector 208. The sample connection circuit 203 is individually configured corresponding to each transistor 117 being tested, and the sample connection circuit 203 is configured to be easily removable.

[0170] Figure 7 This is an explanatory diagram of the connection structure 218, which is an embodiment of the semiconductor element testing apparatus of the present invention. Figure 7 (a) is a schematic diagram illustrating the reverse side. Figure 7 (b) is a schematic diagram of the side view.

[0171] A heat pipe 223 is tightly fitted into the recess 234 of the connecting structure 218. Alternatively, a thermally conductive grease or a heat-dissipating silicone oil compound can be applied between the recess 234 of the connecting structure 218 and the heat pipe.

[0172] The heat pipe 223 is configured to be embedded in the recess 234. By configuring the heat pipe 223 in the recess on the back side of the connecting structure 218, the risk of damage to the heat pipe 223 is reduced. The heat pipe 223 may also be configured on both sides of the connecting structure 218.

[0173] The connecting structure 218 is heated during the test. Therefore, the heat pipe 223 and the heat pipe metal component 231 are also heated. Upon heating, the heat pipe 223 and the heat pipe metal component 231 expand.

[0174] In this invention, the heat pipe metal component 231 of the connecting structure 218 is made of a material with a smaller coefficient of linear expansion than that of the heat pipe 223. Alternatively, the heat pipe 223 of the connecting structure 218 is made of a material with a larger coefficient of linear expansion than that of the heat pipe metal component 231. The material of the heat pipe 223 expands within the recess 234, and the heat pipe 223 is securely embedded through the recess 234. Therefore, the heat pipe 223 will not fall out.

[0175] Examples of materials for the heat pipe metal component 231 include copper (coefficient of linear expansion 16.8), brass (coefficient of linear expansion 19), iron (coefficient of linear expansion 12.1), and stainless steel (SUS304) (coefficient of linear expansion 17.3). Examples of materials for the heat pipe 223 include materials with a larger coefficient of linear expansion than the heat pipe metal component 231, such as aluminum (coefficient of linear expansion 23), tin (coefficient of linear expansion 26.9), and lead (coefficient of linear expansion 29.1). Among these, copper (coefficient of linear expansion 16.8) is preferred as the material for the heat pipe metal component 231, and aluminum (coefficient of linear expansion 23) is preferred as the material for the heat pipe 223. Other materials besides metals, such as carbon, can also be used for the heat pipe metal component 231.

[0176] The connection structure 218 is mainly composed of a heat pipe metal part 231, a connection pressure part 232, and a connection holding part 233. A semiconductor element terminal 226 is inserted between the connection pressure part 232 and the connection holding part 233.

[0177] Figure 9 This is an explanatory diagram illustrating the connection state between transistor 117 and connection structure 218. Heat pipe 223 is disposed on the back side of connection structure 218.

[0178] Transistor 117 is securely fixed to heating and cooling plate 134a. The fixing is achieved by pressing with a spring (not shown). If necessary, a heating and cooling plate can also be disposed on the upper side of transistor 117, allowing transistor 117 to be set to a specified temperature condition.

[0179] The transistor 117 to be tested needs to be securely fixed to the heating and cooling plate 134, making it difficult to remove easily. The installation of the transistor 117 involves fixing multiple transistors 117 initially to be tested to the heating and cooling plate 134. Next, the transistor 117 to be tested is selected, and a connection structure 218 is inserted through the opening 216 of the partition wall 217 and installed on the component terminal 226 of the semiconductor element 117.

[0180] That is, the selected transistor 117 is connected by inserting the connection structure 218 into the opening 216 where the selected transistor 117 is located from the C2 chamber side, thereby making an electrical connection with the component terminal 226.

[0181] The electrical connection to transistor 117 can be easily made by simply inserting it into the connection structure 218. Furthermore, by changing the applied signal of the connection wiring 211 connected to the connection structure 218, the test conditions and test content of transistor 117 can be easily changed.

[0182] A connection wire 211 is connected to one end of the connection structure 218, and a constant current Id is applied to the transistor 117 through the connection wire 211. A heat pipe 223 is disposed on the back side of the connection structure 218.

[0183] A current of several hundred amperes (A) flows through component terminal 226. Even with a small resistance at the contact portion 225, a large amount of heat is generated due to the current of several hundred amperes (A), causing component terminal 226 to overheat. When component terminal 226 overheats, transistor 117 overheats, causing transistor 117 to deteriorate or be damaged.

[0184] In this invention, the heat generated by the component terminal 226 is transferred to the connection wiring 211 side of the connection structure 218 through the heat pipe 223. Therefore, the contact portion 225 will not overheat. A cooling fan 227 is disposed on the lower side of the connection structure 218 to dissipate the heat from the heat pipe 223.

[0185] like Figure 8 As shown in (a), the heat dissipation fins 228 can also be formed or configured in a manner that closely conforms to the heat pipe 223. For example... Figure 8 As shown in (b), a circulating water pipe 135 may also be formed or configured within the connecting structure 218 to cool the connecting structure 218.

[0186] exist Figure 9 In this example, the transistor 117 (semiconductor element 117) has two terminals 226: terminal 226a (P) and terminal 226b (N). For example... Figure 10 As shown, even if the transistor 117 has three terminals 226 (terminal 226a (P), terminal 226b (N), and terminal 226c), the technical concept of this invention can still be applied.

[0187] Figure 10 It is a diagram. Figure 3 The diagram illustrates the connection state of the semiconductor module 117, which has three component terminals 226 (component terminal 226a (P), component terminal 226b (N), component terminal 226c (O)) and the connection structure 218, as shown in (b), (c), (d), and (e).

[0188] exist Figure 10 In the connection structure 218a, a heat pipe 223a is formed or configured, and in the connection structure 218b, a heat pipe 223b is formed or configured. Conversely, in the connection structure 218c, no heat pipe 223 is formed or configured. The connection structure 218c is connected to the component terminal 226c. Large currents do not flow through the component terminal 226c (O) of the transistor 117. Therefore, it is not necessary to form a heat pipe 223 in the connection structure 218c.

[0189] By making the connection structure 218c thinner than other connection structures 218 (connection structure 218a, connection structure 218b), the connection between the connection structure 218 and the component terminal 226 of the transistor 117 becomes easier. In addition, the space for arranging the transistor 117 can be narrower, thus increasing the number of transistors 117 that can be mounted on the heating and cooling plate 134.

[0190] like Figure 11 As shown in (a), in another embodiment of the present invention, the connection structure 218 is mainly composed of a heat pipe metal part 231, a connection receiving part 225, a connection pressure part 232, and a connection holding part 233. A semiconductor element terminal 226 is inserted between the connection receiving part 225 and the connection holding part 233.

[0191] A spring 236 is inserted or disposed in the spring hole 239 of the connecting bearing portion 225 and the connecting pressure portion 232. A positioning screw 237 is inserted or disposed in the positioning threaded hole 240 in the center of the connecting bearing portion 225 to position the connecting bearing portion 225 and the connecting pressure portion 232.

[0192] Spring 236 can be a pressing unit, a sliding unit, or a positioning unit. As an example, spring 236 can be a helical spring. Other examples include leaf springs, spiral springs, and disc springs. Spring 236 is formed or constructed of a metallic material. It can also be formed of heat-resistant materials such as rubber, plastic, or ceramic.

[0193] A helical spring 236 is disposed between the connecting receiving part 225 and the connecting pressure part 232. The connecting pressure part 232 is connected by one or more fixing screws 224b. Pressure (pressing) is applied between the connecting receiving part 225 and the connecting retaining part 233 by tightening or installing the fixing screws 224b.

[0194] The component terminal 226 is clamped between the connection receiving part 225 and the connection holding part 233. By the pressure of the spring 236, the component terminal 226 is clamped between the connection receiving part 225 and the connection holding part 233 with a specified pressure (specified pressing).

[0195] The pressure (pressing) can be easily adjusted by changing the spring 236. Additionally, the pressure (pressing) can be adjusted or set by the tightness of the fixing screw 224b. The heat pipe metal part 231 and the connection retaining part 233 are fixed by one or more fixing screws 224a.

[0196] A connection bearing portion 225 is disposed between the connection pressure portion 232 and the connection retaining portion 233. Platinum, gold, silver, tungsten, copper, nickel, molybdenum, or an alloy thereof are used as the constituent material or at least the surface material of the connection bearing portion 225.

[0197] Similarly, on the surface where the connection retainer 233 contacts the component terminal 226, platinum, gold, silver, tungsten, copper, nickel, molybdenum, or an alloy of these materials are used as the surface material.

[0198] The connection retaining part 233 is fixed to the heat pipe metal part 231 by a fixing screw 224a. The connection pressure part 232 is fixed to the connection retaining part 233 by a fixing screw 224b. A connection wire 211 is fixed to the left end of the heat pipe metal part 231 by a fixing screw 221.

[0199] Figure 11 of (a), Figure 11 (d) is an explanatory diagram illustrating the combined state of the connection retaining part 233, the connection bearing part 225, and the connection pressure part 232.

[0200] The connection retaining part 233 connects and secures the heat pipe 223 to the heat pipe metal part 231 via screws 224a (not shown) inserted into threaded holes 238a1 and 238a2. The heat pipe 223 and the heat pipe metal part 231 are connected and secured in a tight manner with good thermal and electrical conductivity. Furthermore, the connection retaining part 233 is connected and secured to the connection pressure part 232 via screws 224b (not shown) inserted into threaded holes 238b1 and 238b2.

[0201] The connecting receiving portion 225 has protrusions 251 formed at both ends, and the connecting pressure portion 232 has grooves 252 formed at both ends. The protrusions 251 of the connecting receiving portion 225 are embedded in the grooves 252 of the connecting pressure portion 232. The protrusions 251 of the connecting receiving portion 225 and the grooves 252 of the connecting pressure portion 232 form an electrical contact.

[0202] To ensure good contact between the component terminal 226 and the connection receiving portion 225, such as Figure 11 As shown in (c), it is preferable to form a triangle or other irregular shape on the surface of the connecting bearing portion 225.

[0203] Figure 11The configuration is such that the component terminal 226 is clamped between the plane of the connecting pressure part 232 and the plane of the connecting holding part 233.

[0204] Figure 12 The component terminal 226 is held between the pressing member mounting plate 313 and the connection retaining part 233. Pressing members 311a and 311b are mounted on the pressing member mounting plate 313. The pressing member 311 can be, for example, a leaf spring made of metal. Alternatively, the pressing member 311 can be formed of a non-conductive material such as silicone resin. The pressing member 311 is embedded in the pressing member mounting plate 313.

[0205] The component terminal 226 is clamped between the plane of the pressing member 311 and the connection holding part 233. By pressing the pressing member 311, the component terminal 226 is electrically connected to the connection holding part 233.

[0206] exist Figure 11 In embodiment (a), the spring (pressure metal component) 236 is inserted into the spring hole 239 of the contact portion 225. When the spring (pressure metal component) 236, the contact portion 225, and the connecting pressure portion 232 are made of conductive material, current may flow through the component terminal 226 -> contact portion 225 -> spring (pressure metal component) 236 -> connecting pressure portion 232. In this case, if the resistance of the spring (pressure metal component) 236 is high, the current flowing through the spring (pressure metal component) 236 may cause the spring to overheat and burn out.

[0207] exist Figure 12 In an embodiment of the present invention, a spring hole 239 is formed in an insulating plate 312. A pressing member 311 contacts a component terminal 226, and a spring 236 presses against a pressing member mounting plate 313. An insulating plate 312 is disposed on the upper side of the pressing member mounting plate 313, insulating the pressing member mounting plate 313 from the spring 236. A spring hole 239 is formed in the insulating plate 312, and a spring 236 is inserted into the spring hole 239. Other configurations are similar to... Figure 11 Since they are the same, the explanation is omitted.

[0208] Alternatively, the insulating board 312 can also be an insulating film, insulating membrane, or insulating gas such as air.

[0209] Figure 12 (b) is a view of the pressing element mounting plate 313 from the side. Pressing elements 311a and 311b are arranged and inserted in the pressing element mounting plate 313. Figure 12 (c) is from Figure 12 (b) is a diagram viewed from direction A.

[0210] Since the insulating plate 312 is made of an insulating material, even if the pressing member mounting plate 313 is a conductive material such as metal, current will not flow through the spring (pressure metal part) 236. Therefore, no current path is generated from component terminal 226 -> contact part 225 -> spring (pressure metal part) 236 -> connecting pressure part 232.

[0211] Figure 12 The embodiment of (a) is constructed with insulation provided by insulating plate 312. For example... Figure 12 As shown in (a), the insulating effect in this invention is not limited to the use of insulating plate 312. For example, examples can be shown... Figure 12 The structure shown in (d) is as follows.

[0212] Figure 12 (d) is a configuration in which an insulating part 315, made of resin material or the like, is arranged around the threaded hole 238b of the connecting pressure part 232. Since the threaded hole 238b is insulated by the insulating part 315, current will not flow through the fixing screw 224b. Therefore, no current path is generated from component terminal 226 -> contact part 225 -> spring (pressure metal part) 236 -> connecting pressure part 232, and the spring (pressure metal part) 236 will not burn out.

[0213] As described above, the present invention is configured such that an insulating plate 312 is disposed on the side of the spring 236 that applies pressure, so that current does not flow through the pressing member mounting plate 313 and the contact portion 225 side.

[0214] When current flows, it passes through the pressing parts such as spring 236 and fixing screw 224b, causing spring 236 and fixing screw 224b to burn out. Test current is supplied to the component terminal 226 via the connection holding part 233 side with fewer high-resistance parts such as spring 236.

[0215] Figure 17 This is an equivalent circuit diagram and explanatory diagram of the semiconductor device testing apparatus according to the first embodiment of the present invention. An example of a semiconductor module used for testing is shown. Figure 3 (d), but not limited to this.

[0216] exist Figure 17 In this process, by turning on the switching circuit 124b, the output of the power supply device 132 is short-circuited, and the current Id output by the power supply device 132 flows to ground as current Im'. Alternatively, by turning on the switching circuit 124b, the charge charged between the terminals of the power supply device 132 is discharged.

[0217] By simultaneously turning on switch circuits 124c and 124d, current Im flows, the output of power supply device 132 is short-circuited, and the charge in power supply device 132 is discharged. In this configuration or method, switch circuit 124b is not required.

[0218] It is also effective to stagger the timings at which the switch circuits 124c and 124d are turned on. For example, the switch circuit 124c is turned on before the switch circuit 124d, thereby short-circuiting between the channels of the transistor 117s.

[0219] Next, by turning on the switch circuit 124d, the channels of the transistor 117m are short-circuited. Alternatively, the switch circuit 124d is turned on before the switch circuit 124c, thereby short-circuiting between the channels of the transistor 117m. Next, by turning on the switch circuit 124c, the channels of the transistor 117s are short-circuited.

[0220] As described above, by sequentially turning on the switch circuit 124, generation of surge voltage and the like generated in the semiconductor element 117 can be further suppressed.

[0221] By turning on the switch circuit 124a, the current Id output from the power supply device 132 is supplied to the transistor 117.

[0222] The fork-shaped plug 205 is inserted from the opening 216 of the partition wall 214 and is electrically connected to the switch circuit board 201.

[0223] Figure 20 、 Figure 21 are explanatory diagrams of the circuit portion and the circuit operation of the semiconductor test device of the present invention. As Figure 20 、 Figure 21 shown, the semiconductor element test device of the present invention includes an isolation type DCDC converter circuit 138m and an isolation type DCDC converter circuit 138s.

[0224] <e Figure 20 As an example of the semiconductor module to be tested, (d) of Figure 3 、 Figure 3 (e) of Figure 21 As an example of the semiconductor module to be tested, (c) of Figure 3 [[ID=X]]、 Figure 3 (c) of In the electrical component test device and the electrical component test method of the present invention, of course, it can also be applied to other examples than those exemplified in Figure 3

[0225] The isolation type DCDC converter circuit 138m generates two voltages (Vpm1 voltage based on the Vmm1 potential and Vpm2 voltage based on the Vmm2 potential) from the input voltage (Vc voltage of the circuit voltage). GND, Vmm1 voltage, and Vmm2 voltage are insulated. In addition, GND, Vpm1 voltage, and Vpm2 voltage are insulated.

[0226] The isolated DC-DC converter circuit 138s generates two voltages (Vps1 voltage based on Vms1 potential and Vps2 voltage based on Vms2 potential) from the input voltage (Vc voltage). GND, Vms1 voltage, and Vms2 voltage are isolated. Additionally, GND, Vps1 voltage, and Vps2 voltage are isolated.

[0227] The voltages Vmm1, Vmm2, Vms1, and Vms2 can also be referenced using the ground voltage. This ground voltage is insulated from the other voltages. Vmm1 and Vmm2 can also be set to a common potential without being insulated from the time the voltage is generated. Similarly, Vms1 and Vms2 can also be set to a common potential without being insulated from the time the voltage is generated.

[0228] Configure an isolated DC-DC converter circuit to generate voltages Vt1 and Vt2 as needed. Voltages Vt1 and Vt2 are isolated from voltage Vc. Voltage Vt1 is a negative potential with reference to voltage Vmm1. Voltage Vt2 is a negative potential with reference to voltage Vms1.

[0229] The voltage Vt1 can also be generated based on either the voltage Vmm1 or the voltage Vmm2. The voltage Vt2 can also be generated based on either the voltage Vms1 or the voltage Vms2.

[0230] The voltage selection circuit 302 is configured to select the voltages Vt1 and Vmm1 applied to the gate terminal gm of transistor 117m. It is also configured to select the voltages Vt2 and Vms1 applied to the gate terminal gs of transistor 117s (Qs). The voltage selection circuit 302 uses an analog switch, etc.

[0231] The potential difference between the voltages Vmm1 and Vpm1 in the isolated DC-DC converter circuit 138m becomes the turn-on voltage Vg applied to the gate terminal gm of the transistor 117m (Qm). The isolated DC-DC converter circuit 138m is configured in a manner that allows the turn-on voltage Vg to be variable.

[0232] The potential difference between the voltages Vms1 and Vps1 of the isolated DC-DC converter circuit 138s becomes the turn-on voltage Vg applied to the gate terminal gs of the transistor 117s (Qs). The isolated DC-DC converter circuit 138s is configured in a manner that allows the turn-on voltage Vg to be variable.

[0233] Figure 20 , Figure 21 Modules A, B, and C of the isolated DC-DC converter circuit 138m are insulated. Similarly, modules A, D, and E of the isolated DC-DC converter circuit 138s are insulated.

[0234] Power is transmitted between modules A and B, between modules A and C, between modules A and D, and between modules A and E using coils or similar devices. Furthermore, control signals between modules are transmitted and received using phototransistors or similar devices with insulation.

[0235] The circuit ground (GND), Vc voltage, Vpm1 voltage, Vmm1 voltage, Vpm2 voltage, and Vmm2 voltage are in an insulated state. That is, each voltage is in a floating state relative to the other voltages.

[0236] Floating refers to a state in which the voltage or potential is not electrically connected relative to other voltages or potentials, and is independent of other voltages or potentials.

[0237] This invention generates a signal potential, etc., applied to the gate terminal in a floating state. Therefore, it is less susceptible to noise.

[0238] The voltage generated by the isolated DC-DC converter circuit 138 is set to float. The potential difference between voltages Vmm1 and Vpm1 is set to Vm1, and the potential difference between voltages Vmm2 and Vpm2 is set to Vm2.

[0239] For example, if Vmm1 is connected to circuit ground (GND) and Vpm1 is short-circuited to Vmm2, then Vpm2 becomes the voltage obtained by adding Vm2 to Vm1 relative to circuit ground (GND). That is, by setting the potential with other voltages, a floating potential can be determined. The potential level can be changed, moved, and set in correspondence with the potentials of other voltages.

[0240] In the semiconductor device testing apparatus of the present invention, the circuit ground (GND) is isolated from other power supply voltages. Furthermore, it is configured to allow wiring or connection of the isolated power supply voltages. For example, Vmm1 and Vmm2 can be wired to the same potential. Similarly, Vms1 and Vms2 can be wired to the same potential.

[0241] like Figure 17 As shown, the sample connection circuit 203m1 includes a gate driver circuit 113m that generates a gate signal waveform applied to the gate terminal gm of transistor 117m (Qm), a variable resistor circuit 125m that adjusts or sets the rising edge waveform and falling edge waveform of the gate signal, a short circuit circuit 137m, a voltage selection circuit 302m, etc.

[0242] The sample connection circuit 203m2 includes a constant current setting circuit 130m that generates a constant current Icm applied to the diode Dm of transistor 117m, and a voltage detection circuit 129m that measures or detects the terminal voltage of diode Dm.

[0243] The sample connection circuit 203s1 includes a gate driver circuit 113s that generates a gate signal waveform applied to the gate terminal gs of transistor 117s, a variable resistor circuit 125s that adjusts or sets the rising edge waveform and falling edge waveform of the gate signal, a short circuit circuit 137s, a voltage selection circuit 302s, etc.

[0244] The sample connection circuit 203s2 includes a constant current setting circuit 130s that generates a constant current Ics applied to the diode Ds of transistor 117s, and a voltage detection circuit 129s that measures or detects the terminal voltage of diode Ds.

[0245] Unless otherwise specified, the N-electrode terminal of semiconductor element 117 will be used as the reference potential (AGND, 0(V)) in the following description.

[0246] When the N-electrode terminal of semiconductor element 117 is used as the reference potential, the potential of the emitter terminal es of transistor 117s becomes the channel voltage Vcem of transistor 117m. That is, it becomes the potential of the O-electrode terminal of semiconductor element 117.

[0247] The potential of the P-terminal of semiconductor device 117 is the voltage obtained by adding the inter-channel voltage Vcem of transistor 117m and the inter-channel voltage Vces of transistor 117s. The potentials of the O-terminal and P-terminal vary depending on the magnitude of the current Id flowing through transistors 117m and 117s, and the on / off states of transistors 117m and 117s. In particular, the potential variation at the emitter terminal es of transistor 117s is relatively large.

[0248] Vms1, which is the potential of the emitter terminal es of transistor 117s, is preferably configured to vary according to the change of the inter-channel voltage Vcem of transistor 117m.

[0249] In this invention, Vmm1, which is the potential of the emitter terminal em of transistor 117m, floats relative to Vms1, which is the potential of the emitter terminal es of transistor 117s. Therefore, when the inter-channel voltage Vcem of transistor 117m changes, the Vces voltage also changes in the same direction and at the same potential.

[0250] The power supply potential of diode Dm of transistor 117m is preferably referenced to the potential of emitter terminal em of transistor 117m. The potential of diode Ds of transistor 117s is preferably referenced to the potential of emitter terminal es of transistor 117s.

[0251] In this invention, the voltages Vc, Vms1 / Vps1, and Vms2 / Vps2 of the isolated DC-DC converter circuit 138s are isolated. Similarly, the voltages Vc, Vmm1 / Vpm1, and Vmm2 / Vpm2 of the isolated DC-DC converter circuit 138m are isolated. Each voltage is configured to be connectable and wired to any voltage.

[0252] Figure 22 This is an explanatory diagram illustrating the wiring of the power supply system of the semiconductor element testing apparatus of the present invention. The N-electrode terminal of transistor 117 is connected to AGND. As an example, AGND is the ground potential.

[0253] like Figure 22 , Figure 23 , Figure 24 , Figure 25 As shown, the present invention allows for arbitrary changes to the wiring. Furthermore, the connection wiring and applied voltage can be changed via the switch circuit 123 and the selector 127.

[0254] Transistor 117m's emitter terminal em is electrically connected to the N-electrode terminal, and emitter terminal em is also connected to the Vmm1 terminal. Additionally, emitter terminal em is connected to the Vmm2 terminal. Transistor 117s's emitter terminal es is connected to the Vms1 terminal. Additionally, emitter terminal es is connected to the Vms2 terminal.

[0255] The potential of the emitter terminal es of transistor 117s is the voltage obtained by applying the inter-channel voltage Vcem of transistor 117m to the potential of the N-electrode terminal. Therefore, the potential of the emitter terminal es of transistor 117s varies depending on the on / off state of transistor 117m and the magnitude of the constant current Id.

[0256] The gate signal Vsg applied to the gate terminal gm of transistor 117m is referenced to the potential of the emitter terminal em. If the voltage that turns on transistor 117m is set to Vg, then transistor 117m becomes in the on state when a voltage Vg is applied from the AGND potential of the N electrode terminal.

[0257] Figure 19 This is a timing diagram illustrating the operation of the circuit section of the semiconductor testing apparatus of the present invention. Figure 19 The Vt voltage applied during periods tn2 and tn1 in (a) is set according to the semiconductor device 117 being tested. Figure 19 As shown in (b), (c), and (i), the period during which the constant current Id does not flow is tcs, the period before the constant current Id flows through transistor 117, and tcm, the period after the constant current Id flows. The period during which the constant current Id flows is tcc.

[0258] During at least one of the periods tcs, tcm, and tcc, switch Si is turned on, and the voltage Ve at the two terminals of the variable resistor circuit 125 is measured.

[0259] Figure 19 St2 (d) is the timing signal that causes current Ic to flow through diode D (diode Ds, diode Dm). When St2 is at level H, current flows through diode D of transistor 117. Voltage detection circuit 129 acquires the voltage between the terminals of diode D, and temperature measurement circuit converts the voltage between the terminals into temperature information Tj. Temperature information Tj is sent to control circuit board 111 (controller 111). St1 and St2 are the time for the measuring current to flow through the diode for temperature measurement or the temperature measurement time.

[0260] Figure 19 Vce of (g) is the inter-channel voltage of transistor 117 (transistor 117m, transistor 117s), and the temperature information Tj shows the measured temperature change of transistor 117 (transistor 117m, transistor 117s).

[0261] exist Figure 19 In (a), the 0 (V) potential is the voltage that turns off transistor 117m. Figure 19 In (a), the voltage Vt1 is plotted as the voltage Vt. The voltage Vt1 is a voltage with a negative polarity compared to the potential 0 (V). The negative side of the voltage Vt1 is applied with reference to the voltage Vmm1.

[0262] The current Icm flowing through diode Dm generates voltages Vmm2 and Vpm2 as power supplies. Since Vmm2 and Vmm1 are common voltages, the voltage at the terminals of diode Dm is within the range of Vmm1 and Vpm2, and is based on AGND.

[0263] The gate signal Vsg applied to the gate terminal gs of transistor 117s is referenced to the potential of the emitter terminal es. The potential of the emitter terminal es is the voltage obtained by applying the inter-channel voltage Vcem of transistor 117m to the AGND potential of the N electrode terminal.

[0264] like Figure 19 As shown in (a), if the voltage that turns on transistor 117s is set to Vg, the voltage that turns on transistor 117s is based on the voltage obtained by applying the inter-channel voltage Vcem of transistor 117m to the AGND potential of the N electrode terminal. When Vg voltage is applied, transistor 117s becomes in the on state.

[0265] The Vms1 voltage is isolated from the Vmm1 voltage and is in a floating state. Therefore, even if the inter-channel voltage Vcem of transistor 117m changes, the emitter terminal es potential of transistor 117s will change according to the change in the inter-channel voltage Vcem of transistor 117m. The Vms1 voltage is generated based on the emitter terminal es potential.

[0266] The gate signal Vsg applied to the gate terminal gs of transistor 117s is referenced to the potential of the emitter terminal es. For example... Figure 19 As shown in (a), if the voltage that turns on transistor 117s is set to Vg, then transistor 117s becomes in the on state when a voltage of Vg is applied from the emitter terminal es potential.

[0267] In addition, Figure 19 In (a), the voltage Vt2 is plotted as the voltage Vt. The voltage Vt2 is the voltage with negative polarity compared to the potential 0 (V). The negative side of the voltage Vt2 is applied with reference to the voltage Vms1.

[0268] The current Ics flowing through diode Ds generates voltages Vms2 and Vps2 as power supplies. Since voltage Vms2 is common to voltage Vms1, the voltage at the terminals of diode Ds is within the range of Vms1 and Vps2.

[0269] The Vms1 voltage is isolated from the Vmm1 voltage and is in a floating state. Furthermore, the Vms1 voltage is connected to the collector terminal cm of transistor 117m. Therefore, even if the inter-channel voltage Vcem of transistor 117m changes, the voltage at which transistor 117s turns on (Vg) and the voltage at which it turns off (0 (V)) will not change. Thus, effective control over the turn-on and turn-off of transistor 117s is possible.

[0270] Figure 23 This is an explanatory diagram illustrating the wiring of the power supply system in another semiconductor element testing apparatus of the present invention. Figure 23 In the wiring, the N-terminal of transistor 117 is connected to AGND. As an example, AGND is the ground potential.

[0271] The emitter terminal em of transistor 117m is electrically connected to the N-electrode terminal, and the emitter terminal em is connected to the Vmm1 terminal. The emitter terminal es of transistor 117s is connected to the Vms1 terminal. The Vmm2 and Vms2 terminals are insulated from other power supply terminals and are in a floating state.

[0272] The current Icm flowing through diode Dm generates voltages Vmm2 and Vpm2 as power. The voltages at the terminals of diode Dm are essentially in the range of Vmm2 and Vpm2.

[0273] The current Ics flowing through diode Ds generates voltages Vms2 and Vps2 as power supplies. The voltages at the terminals of diode Ds are essentially in the range of Vms2 and Vps2.

[0274] The potential of the Vmm2 terminal is maintained at a potential referenced to AGND, and the potential of the Vms2 terminal is maintained at a potential referenced to the emitter terminal es of transistor 117s.

[0275] Figure 24 This is an explanatory diagram illustrating the wiring of the power supply system in another semiconductor element testing apparatus of the present invention. Figure 24 In the wiring, the N-electrode terminal of transistor 117 is connected to AGND.

[0276] Transistor 117m's emitter terminal em is electrically connected to the N-electrode terminal, and emitter terminal em is connected to terminal Vmm1. Additionally, terminal Vmm2 is connected to terminal Vms2. Transistor 117s's emitter terminal es is connected to terminal Vms1. Terminals Vmm1 and Vmm2 are not connected.

[0277] The current Icm flowing through diode Dm generates voltages Vmm2 and Vpm2 as power sources. The voltage at the terminals of diode Dm is essentially within the range of Vmm2 and Vpm2. The current Ics flowing through diode Ds generates voltages Vms2 and Vps2 as power sources. The voltage at the terminals of diode Ds is also essentially within the range of Vms2 and Vps2. Since Vmm2 and Vms2 are common, the potentials of diodes Dm and Ds operate within this common potential range.

[0278] exist Figure 24 In this configuration, the switching circuit 123 is positioned midway through the power connection wiring. The switching circuit 123 can switch between connecting the Vms2 voltage to the Vpm2 voltage, or connecting the Vms2 voltage to the Vmm2 voltage.

[0279] like Figure 24 As shown, by configuring or setting the switch circuit 123, a wide variety of tests can be conducted. Examples of switch circuit 123 include analog switches, relay circuits, magnetic switches, etc.

[0280] Switching circuit 123 is not limited to Figure 24 Examples include... For instance, it can also be configured to select Vmm1 and Vpm1 voltages to connect to other potentials (e.g., connected to Vmm1 voltage). As described above, the present invention is characterized by its ability to change the wiring state of potentials generated by isolated DC-DC converter circuits, etc.

[0281] Figure 25This is an explanatory diagram illustrating the wiring of the power supply system in another semiconductor element testing apparatus of the present invention. Figure 25 In the wiring, the N-electrode terminal of transistor 117 is connected to AGND.

[0282] Transistor 117m's emitter terminal em is electrically connected to the N-electrode terminal, and emitter terminal em is connected to terminal Vmm1. Terminal Vmm1 is connected to terminal Vmm2, and terminal Vmm1 is connected to terminal Vms1. Transistor 117s's emitter terminal es is connected to terminal Vms1.

[0283] The Vmm2 terminal is connected to the Vms2 terminal. The current Icm flowing through diode Dm generates Vmm2 and Vpm2 voltages as power. The voltages at the terminals of diode Dm are essentially within the range of Vmm2 and Vpm2.

[0284] The current Ics flowing through diode Ds generates voltages Vmm2 and Vps2 as power sources. The voltage at the terminals of diode Ds is essentially within the range of Vmm2 and Vps2. Since Vmm2 and Vms2 are common, the potentials of diodes Dm and Ds operate within this common potential range.

[0285] When the potential of voltage Vmm1 changes, the potential of voltage Vpm1 also shifts. When the potential of voltage Vmm2 changes, the potential of voltage Vpm2 also shifts.

[0286] When the potential of voltage Vms1 changes, the potential of voltage Vps1 also shifts accordingly. When the potential of voltage Vms2 changes, the potential of voltage Vps2 also shifts accordingly.

[0287] The voltages Vmm1 and Vms1 are set to float. Therefore, when the inter-channel voltage Vcem of transistor 117m changes, Vms1 changes in tandem with the change in Vcem.

[0288] The gate signal (on / off signal) applied to the gate terminal gm of transistor 117m is output with reference to voltage Vmm1. The gate signal (on / off signal) applied to the gate terminal gs of transistor 117s is output with reference to voltage Vms1.

[0289] When the current Id flowing through transistor 117m changes and the applied voltage at the gate terminal gm of transistor 117m changes, even if the inter-channel voltage Vcem of transistor 117m changes, the voltage Vms1 will also change in conjunction with the voltage Vcem because the voltage Vms1 is floating.

[0290] Even if the channel voltage Vce of transistor 117m changes, since the voltage Vms1 is floating, the gate signal of transistor 117s is generated based on the voltage Vms1, so transistor 117s can perform turn-on and turn-off control without any problems.

[0291] The voltages Vmm1 and Vms1 of diode Ds are floating. Therefore, even if the voltage Vmm1 changes, or the inter-channel voltage Vcem of transistor 117m changes, the temperature of transistor 117s can be measured without damage.

[0292] Figure 26 This is an explanatory diagram illustrating the test method or test state of the semiconductor device test apparatus and semiconductor device components of the present invention. The test is carried out sequentially or randomly. Figure 26 The semiconductor element 117 is tested in any state or by any method described herein.

[0293] Figure 26 (a) is an illustration of the method (state) of short-circuiting the terminals of transistor 117 (between P electrode terminal and N electrode terminal) to discharge the charge, thereby preventing surge voltage and transient current from flowing through transistor 117.

[0294] A cutoff voltage, Vsgm, is applied to the gate terminal gm of transistor 117m, turning transistor 117m into the cutoff state. A cutoff voltage, Vsgs, is applied to the gate terminal gs of transistor 117s, turning transistor 117s into the cutoff state. Short-circuit circuits 137s and 137m are turned off (open circuit). Switching circuits 124c and 124d are turned on (closed circuit).

[0295] Figure 26 (b) shows the state in which the short-circuit circuit 137s is turned on, making the transistor 117s a diode connected state, and the transistor 117m is turned on, making the constant current Id flow through the semiconductor element 117, and the semiconductor element 117 is tested.

[0296] By periodically or intermittently applying a turn-on voltage or a turn-off voltage as a gate signal Vsgm to the gate terminal gm of transistor 117m, transistor 117m is controlled to be in a turn-on state or a turn-off state.

[0297] The short-circuit circuit 137s connected between the gate terminal gs and the emitter terminal es of transistor 117s is turned on, and transistor 117s becomes a diode connected state. Switching circuits 124c and 124d are turned off (open circuit).

[0298] In semiconductor device 117, a constant current Id flows between the P-electrode terminal and the N-electrode terminal. By applying a gate signal Vsgm to the gate terminal gm of transistor 117m, the transistor 117m is turned on and off, and the semiconductor device 117 is tested.

[0299] Figure 26 (c) shows the state in which transistor 117m is in diode connection state, transistor 117s is turned on, a constant current Id flows through semiconductor element 117, and a test is performed on semiconductor element 117.

[0300] By periodically or intermittently applying a turn-on voltage or a turn-off voltage as a gate signal Vsgs to the gate terminal gs of transistor 117s, transistor 117s is controlled to be in a turn-on state or a turn-off state.

[0301] The short-circuit circuit 137m connected between the gate terminal gm and the emitter terminal em of transistor 117m is turned on, and transistor 117m is in a diode-connected state. Switching circuits 124c and 124d are turned off (open circuit). In semiconductor element 117, a constant current Id flows between the P-electrode terminal and the N-electrode terminal.

[0302] By applying a gate signal Vsgs to the gate terminal gs of transistor 117s, the transistor 117s is turned on and off, and the semiconductor device 117 is tested.

[0303] Figure 26 (d) turns on transistor 117s and turns off transistor 117m. A turn-on voltage or turn-off voltage is periodically or intermittently applied to the gate terminal gs of transistor 117s as a gate signal Vsgs. Transistor 117m is controlled to be in the off state.

[0304] The short-circuit circuit 137, connecting the gate terminal g and emitter terminal e of transistors 117m and 117s, is turned off (open circuit). Switching circuit 124c is turned off, and switching circuit 124d is turned on (closed circuit).

[0305] In semiconductor device 117, current Id flows from the P electrode terminal through the channel of transistor 117s and through switching circuit 124d. By applying a gate signal Vsgs to the gate terminal gs of transistor 117s, the transistor 117s is controlled to turn on and off, and the semiconductor device 117 is tested.

[0306] Figure 26(e) turns on transistor 117m and turns off transistor 117s. A turn-on voltage or turn-off voltage is periodically or intermittently applied as a gate signal Vsgm to the gate terminal gm of transistor 117m. Transistor 117s is controlled to be in the off state.

[0307] The short-circuit circuit 137, connecting the gate terminal g and emitter terminal e of transistors 117m and 117s, is turned off (open circuit). Switching circuit 124d is turned off (open circuit) and turned on (closed circuit).

[0308] In semiconductor device 117, current Id flows from the P-electrode terminal through switching circuit 124c, and current Id flows between the channels of transistor 117m. By applying a gate signal Vsgm to the gate terminal gm of transistor 117m, the transistor 117m is controlled to turn on and off, and the semiconductor device 117 is tested.

[0309] Figure 26 (f) shows the state in which a gate signal is applied to the gate terminals g (gate terminal gm, gate terminal gs) of transistors 117m and 117s, causing a constant current Id to flow through the semiconductor element 117, and the semiconductor element 117 is tested.

[0310] A turn-on voltage or a turn-off voltage is periodically or intermittently applied to the gate terminal gs of transistor 117s and the gate terminal gm of transistor 117m. Transistors 117s and 117m are controlled to be in a turn-on state or a turn-off state.

[0311] The short-circuit circuit 137 connecting the gate terminal g and emitter terminal e of transistors 117m and 117s is turned off. Switching circuits 124c and 124d are turned off (open circuit). A constant current Id flows between the P-electrode terminal and the N-electrode terminal in semiconductor element 117.

[0312] By controlling the transistors 117m and 117s to be turned on at different times, or by controlling the transistors 117m and 117s to be turned on for only a very short period of time, surge voltage and transient current can be allowed to flow through the semiconductor element 117, enabling more stringent testing.

[0313] By selection or combination Figure 19 Timing waveforms and Figure 26 (a)~ Figure 26 The test of semiconductor device 117 is carried out by test (f). The combination can be illustrated by performing the test sequentially. Figure 26 (a)~ Figure 26 The circumstances of the (f) trial, randomized implementation Figure 26 (a)~ Figure 26 The situation of the experiment of (f).

[0314] Figure 27 This is an explanatory diagram of a semiconductor device testing apparatus and a semiconductor device testing method according to another embodiment of the present invention. The test circuit module 301 can be illustrated. Figure 3 Etc. Experimental circuit module 301 and Figure 27 The A, B, and C sections of (a) are connected. The test circuit module 301 is prepared corresponding to each semiconductor element 117. The test circuit module 301 can be exemplified, for example... Figure 26 , Figure 3 The test circuit module 301 is connected to three switch circuit boards 201 (switch circuit board 201b, switch circuit board 201c, and switch circuit board 201d). For example... Figure 27 As shown in (a), the switch circuit board 201b is prepared corresponding to the semiconductor element 117 to be tested. Figure 27 In (a), switch circuit 124aa is configured in test circuit module 301a, switch circuit 124ab is configured in test circuit module 301b, and switch circuit 124ac is configured in test circuit module 301c.

[0315] Figure 27 The embodiment of (a) is an embodiment for testing multiple semiconductor elements 117. The semiconductor element testing apparatus of the present invention can simultaneously test multiple test circuit modules 301 or sequentially test the test circuit modules 301 by controlling the switching circuit 124a.

[0316] The test circuit module 301 is controlled by a control circuit board 111. Only one power supply unit 132 is needed for the multiple test circuit modules 301 (semiconductor elements 117) being tested.

[0317] Figure 27 (b) is a timing diagram illustrating the operation of the semiconductor element testing apparatus of the present invention. The test is performed by sequentially applying a turn-on voltage Vsg to the transistor 117m of module 301 of the test circuit to activate it.

[0318] The items or contents described in this specification and the accompanying drawings can of course be combined with each other.

[0319] Industrial applicability

[0320] The present invention provides a semiconductor device testing apparatus and a semiconductor testing method that can easily change the connection according to the test content of semiconductor devices such as transistors and the number of simultaneous tests of semiconductor devices.

[0321] Explanation of reference numerals in the attached figures

[0322] 111 Control Circuit Board (Controller)

[0323] 112 Gate signal control circuit

[0324] 113 Gate driver circuit

[0325] 115 Temperature Measurement Circuit

[0326] 116 Operational Amplifier (Buffer Amplifier)

[0327] 117 Power Transistors

[0328] 118 Constant Current Circuit

[0329] 121 Constant Current Circuit

[0330] 122 Switching Circuit

[0331] 124 Switching Circuit

[0332] 125 Variable Resistor Circuit

[0333] 126 Variable Resistor Circuit

[0334] 127 Selector

[0335] 128 Current Detection Circuit

[0336] 129 Voltage Detection Circuit

[0337] 130 Constant Current Setting Circuit

[0338] 131 Control Frame

[0339] 132 Power Supply Unit

[0340] 133 Control Circuit

[0341] 134 Heating and cooling plate

[0342] 135 circulating water pipe

[0343] 136 Cooler

[0344] 137 Short-circuit circuit

[0345] 138 Insulated DC-DC Converter Circuit

[0346] 201 Switching Circuit Board

[0347] 202 Connector

[0348] 203 Sample Connection Circuit

[0349] 204 Conductor Plate

[0350] 205 Fork-shaped plug

[0351] 206 connection pins

[0352] 207 Motherboard

[0353] 208 connector

[0354] 209 Device Control Circuit Board

[0355] 210 Housing

[0356] 211 Connection wiring

[0357] 212 Power Wiring

[0358] 213 Connector

[0359] 214 Partition wall

[0360] 215 Partition wall

[0361] 216 Opening

[0362] 219 Connecting Bolt

[0363] 220 Contact Department

[0364] 221 Fixing screw

[0365] 222 Signal wiring

[0366] 223 heat pipe

[0367] 224 Fixing Screw

[0368] 225 Contact Section

[0369] 226 Component Terminals

[0370] 227 Cooling Fan

[0371] 228 Heat dissipation fins

[0372] 231 Heat pipe metal parts

[0373] 232 Connecting pressure section

[0374] 233 Connection and retention part

[0375] 236 Spring (compression metal component)

[0376] 237 Position fixing screw

[0377] 238 threaded hole

[0378] 239 Spring Hole

[0379] 240 positioning threaded hole

[0380] 241 Fork-shaped plug insertion board

[0381] 251 convex part

[0382] 252 Groove

[0383] 301 Test Circuit Module

[0384] 302 Voltage Selection Circuit

[0385] 311 Pressing component

[0386] 312 Insulation Board

[0387] 313 Press-fit mounting plate

[0388] 315 Insulation section.

Claims

1. A semiconductor device testing apparatus for testing a semiconductor device having a first transistor and a second transistor, wherein, The first transistor is connected to a first element terminal, a third element terminal, and a first gate terminal, and the second transistor is connected to a second element terminal, the third element terminal, and a second gate terminal, characterized in that it comprises: A power supply device having a first output terminal and a second output terminal supplies test current or test voltage to the semiconductor element; A gate driver circuit applies a first on-state voltage or a first off-state voltage to the first gate terminal and applies a second on-state voltage or a second off-state voltage to the second gate terminal; A voltage generating circuit generates the first on-state voltage and the first off-state voltage, as well as the second on-state voltage and the second off-state voltage. The second component terminal is connected to the first output terminal. The first component terminal is connected to the second output terminal. The first on voltage and the first off voltage are insulated from the second on voltage and the second off voltage.

2. A semiconductor device testing apparatus for testing a semiconductor device having a first transistor and a second transistor, wherein, The first transistor is connected to a first element terminal, a third element terminal, and a first gate terminal, and the second transistor is connected to a second element terminal, the third element terminal, and a second gate terminal, characterized in that it comprises: A power supply device having a first output terminal and a second output terminal supplies test current or test voltage to the semiconductor element; A gate driver circuit having a first voltage terminal, a second voltage terminal, a fifth voltage terminal, a third voltage terminal, a fourth voltage terminal, and a sixth voltage terminal; The voltage generating circuit generates a second voltage and a fifth voltage based on the first voltage of the first voltage terminal, and a fourth voltage and a sixth voltage based on the third voltage of the third voltage terminal. The second component terminal is connected to the first output terminal. The first component terminal is connected to the second output terminal. The first voltage terminal is connected to the first element terminal. The third voltage terminal is connected to the third component terminal. The second voltage is supplied to the second voltage terminal. The fourth voltage is supplied to the fourth voltage terminal. The fifth voltage is supplied to the fifth voltage terminal. The sixth voltage is supplied to the sixth voltage terminal. The gate driver circuit generates a first on-state voltage or a first off-state voltage applied to the first gate terminal. The gate driver circuit generates a second on-state voltage or a second off-state voltage applied to the second gate terminal. The second voltage terminal and the fifth voltage terminal are insulated from the fourth voltage terminal and the sixth voltage terminal.

3. A semiconductor device testing apparatus for testing a semiconductor device having a first transistor and a second transistor, wherein, The first transistor is connected to a first element terminal, a third element terminal, and a first gate terminal, and the second transistor is connected to a second element terminal, the third element terminal, and a second gate terminal, characterized in that it comprises: A power supply device having a first output terminal and a second output terminal supplies test current or test voltage to the semiconductor element; A gate driver circuit applies a first on-state voltage or a first off-state voltage to the first gate terminal and applies a second on-state voltage or a second off-state voltage to the second gate terminal; The voltage generating circuit produces voltages 2, 5, 4, and 6. The second component terminal is connected to the first output terminal. The first component terminal is connected to the second output terminal. Based on the second voltage and the fifth voltage, the gate driver circuit generates the first on-state voltage or the first off-state voltage applied to the first gate terminal. Based on the fourth voltage and the sixth voltage, the gate driver circuit generates the second on-state voltage or the second off-state voltage applied to the second gate terminal. The second voltage and the fifth voltage are insulated from the fourth voltage and the sixth voltage.

4. A semiconductor device testing apparatus for testing a semiconductor device having a first transistor and a second transistor, wherein, The first transistor is connected to a first element terminal, a third element terminal, and a first gate terminal, and the second transistor is connected to a second element terminal, the third element terminal, and a second gate terminal, characterized in that it comprises: A power supply device having a first output terminal and a second output terminal supplies test current or test voltage to the semiconductor element; Gate driver circuit; The voltage generating circuit produces voltages 1, 2, and 5, as well as voltages 3, 4, and 6. The second component terminal is connected to the first output terminal. The first component terminal is connected to the second output terminal. The terminal that outputs the first voltage is connected to the terminal of the first element. The terminal that outputs the second voltage is connected to the terminal of the third component. The first voltage, the second voltage, and the fifth voltage are insulated from the third voltage, the fourth voltage, and the sixth voltage. The gate driver circuit generates the first on-state voltage or the first off-state voltage based on the first voltage and the second voltage or the fifth voltage, and applies the generated first on-state voltage or the first off-state voltage to the first gate terminal. The gate driver circuit generates the second on-state voltage or the second off-state voltage based on the third voltage and the fourth voltage or the sixth voltage, and applies the generated second on-state voltage or the second off-state voltage to the second gate terminal.

5. The semiconductor device testing apparatus according to any one of claims 1 to 4, characterized in that, A diode is connected between the first component terminal and the third component terminal. It also has: A constant current circuit supplies a constant current. The voltage measurement circuit measures the voltage between the terminals of the first and third components. When the first cutoff voltage is applied to the first gate terminal, the constant current circuit supplies the constant current to the diode. The voltage measuring circuit measures the voltage between the terminals of the diode.

6. The semiconductor device testing apparatus according to any one of claims 1 to 4, characterized in that, It also includes: a constant current circuit for supplying a constant current between the first element terminal and the third element terminal; and a voltage measurement circuit for measuring the voltage between the first element terminal and the third element terminal. The gate driver circuit periodically applies a first on-state voltage, a first off-state voltage, and a second off-state voltage lower than the first off-state voltage to the first gate terminal. During the application of the second cutoff voltage, the constant current circuit supplies the constant current between the first element terminal and the third element terminal. During the supply of the constant current, the voltage measuring circuit measures the voltage between the first element terminal and the third element terminal.

7. The semiconductor device testing apparatus according to any one of claims 1 to 4, characterized in that, A first switching circuit is disposed between the first element terminal and the third element terminal. A second switching circuit is disposed between the third component terminal and the second component terminal. During the first period, The gate driver circuit applies the first cutoff voltage to the first gate terminal and the second turn-on voltage to the second gate terminal. The second switching circuit is turned off, and the first switching circuit is turned on, supplying the test current or the test voltage to the second transistor. During the second period, The gate driver circuit applies the first on-state voltage to the first gate terminal and the second off-state voltage to the second gate terminal. The second switching circuit is turned on, the first switching circuit is turned off, and the test current or the test voltage is supplied to the first transistor.

8. The semiconductor device testing apparatus according to any one of claims 1 to 4, characterized in that, It also includes: a voltage measurement circuit for measuring the voltage between the first component terminal and the third component terminal. The voltage output by the voltage measurement circuit is converted into temperature information Tj of the semiconductor element. Control is performed based on the temperature information Tj.

9. The semiconductor device testing apparatus according to any one of claims 1 to 4, characterized in that, It also includes: a conductor plate or conductor rod; a switching circuit board with a switching circuit configured thereon; and a connecting component for connecting to the component terminals of the semiconductor element. It is housed in a shell divided into two parts, Part 1 and Part 2. The semiconductor element is disposed in the first part. The switching circuit board is disposed in the second part. An opening is provided between the first part and the second part. The connecting component is connected to the conductor plate or the conductor rod by inserting it into the opening.

10. The semiconductor device testing apparatus according to any one of claims 1 to 4, characterized in that, It also has: Conductor plate or conductor rod; A switching circuit board, equipped with a switching circuit; The connecting component is connected to the terminal of the second element. The switching circuit is connected to the conductor plate or the conductor rod. The conductor plate or the conductor rod has a first portion extending from the switch circuit substrate. By fitting the front end of the connecting component into the first part. This forms a path for supplying the test current or the test voltage to the terminal of the second element via the switching circuit.

11. The semiconductor device testing apparatus according to any one of claims 1 to 4, characterized in that, It also has a connecting structure. The connecting structure has: The connection retaining part contacts the first surface of the second element terminal; The connection receiving part is disposed spatially away from the connection holding part and contacts the second surface of the second element terminal; Screws; The connecting pressure section has a threaded hole for the screw to be inserted. The distance between the connecting bearing part and the connecting pressure part is adjusted or set by the screw. The second component terminal is held between the connection retaining portion and the connection receiving portion.

12. The semiconductor device testing apparatus according to any one of claims 1 to 4, characterized in that, It also has: A resistor circuit is connected to the first gate terminal; A terminal voltage measuring circuit measures the terminal voltage of the resistor circuit.

13. The semiconductor device testing apparatus according to any one of claims 1 to 4, characterized in that, It also features a heating and cooling plate and a water leakage sensor. The semiconductor element is disposed on the heating and cooling plate. The leakage sensor is disposed around the heating and cooling plate. The action of the leak sensor can trigger at least one of the following actions: a stop action or an alarm action.

14. The semiconductor device testing apparatus according to any one of claims 1 to 4, characterized in that, It also has a connecting structure. The connection structure is connected to the terminal of the second element. The test current or the test voltage is supplied to the semiconductor element via the connection structure. The connecting structure has a heat pipe metal component with a recess. A heat pipe is disposed in the recess. The coefficient of linear expansion of the heat pipe metal component of the connecting structure is smaller than that of the heat pipe.

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