An ultra-high temperature cable and a method of making the same

Abstract

The application discloses an ultrahigh-temperature cable and a preparation method thereof, wherein the ultrahigh-temperature cable comprises a cable core, a plurality of cable cores are twisted into a cable core, a shielding layer is braided outside the cable core, an outer sheath is arranged outside the shielding layer, and a filler is arranged between the cable core and the shielding layer; the cable core comprises, from inside to outside, a conductor, a self-adapting interface layer and an insulating layer in sequence, the conductor is a porous high-entropy carbide / nitride nanowire network, the self-adapting interface layer is a Sc2W3O 12 base self-adapting interface layer, and the insulating layer is a heterojunction composite of BN nanotube aerogel and rare earth stabilized zirconium oxide aerogel and partially penetrates into the conductor gap. The application solves the problems of conductor high-temperature oxidation and conductivity attenuation by inhibiting high-temperature grain growth and oxidation through high-entropy effect, actively compresses the interface at high temperature by using the composite interface layer of negative thermal expansion material, inhibits crack initiation, realizes high-temperature self-adapting sealing, and realizes the unity of ultralow thermal conductivity and high insulation strength through the heterojunction aerogel insulation.

Description

Technical Field

[0001] This invention relates to an ultra-high temperature cable and its manufacturing method. Background Technology

[0002] Existing ultra-high temperature cables mostly use metallic conductors (such as nickel-plated copper wire or stainless steel) or carbon-based materials (such as carbon fiber or carbon nanotubes), combined with structures such as ceramicized silicone rubber, mica tape, or aerogel composite insulation. However, these solutions share the following common drawbacks:

[0003] 1. Metallic conductors are prone to oxidation, creep, or melting at temperatures above 800℃, and carbon-based materials have poor stability in oxidizing atmospheres;

[0004] 2. The insulation layer is mostly a single material system (such as pure aerogel, ceramicized silicone rubber), which shrinks, cracks or peels off at high temperature during sintering.

[0005] 3. The shielding layer relies on metal braiding, which is prone to failure at high temperatures;

[0006] 4. The structure has many layers but poor functional coupling and lacks a high-temperature adaptive mechanism. Summary of the Invention

[0007] The purpose of this invention is to provide an ultra-high temperature cable and its preparation method to solve the technical problems mentioned in the background section.

[0008] The technical solution to achieve the objective of this invention is: an ultra-high temperature cable, comprising a cable core, multiple cable cores stranded together to form a cable core, a shielding layer braided around the cable core, an outer sheath disposed outside the shielding layer, and a filler disposed between the cable core and the shielding layer; the cable core comprises, from the inside out, a conductor, an adaptive interface layer, and an insulation layer, wherein the conductor is a porous high-entropy carbide / nitride nanowire network, and the adaptive interface layer is Sc2W3O 12 The base adaptive interface layer is an insulating layer that is a heterojunction composite of BN nanotube aerogel and rare earth stabilized zirconia aerogel, and partially penetrates into the conductor voids.

[0009] Furthermore, the porous high-entropy carbide / nitride nanowire network comprises at least four transition metal elements.

[0010] Furthermore, the porous high-entropy carbide / nitride nanowire network has a porosity of 60%-80%.

[0011] Furthermore, the adaptive interface layer is Sc2W3O. 12 -ZrO2-Y2O3 composite coating.

[0012] Furthermore, the thickness of the adaptive interface layer is 50-200 nm.

[0013] Furthermore, the adaptive interface layer includes pores through which the gaseous BN precursor can pass.

[0014] Furthermore, the shielding layer is a graphene-coated SiC nanofiber woven layer.

[0015] Furthermore, the outer sheath is a SiC sheath.

[0016] A method for preparing an ultra-high temperature cable, comprising the following steps:

[0017] Step 1: Prepare soluble ZrO2-Y2O3 fiber template by electrospinning;

[0018] Step 2: High-entropy carbide / nitride nanowires are grown on the template by CVD, and then the template is dissolved to form a porous conductor;

[0019] Step 3: Prepare an adaptive interface layer by ALD deposition on the conductor surface;

[0020] Step 4: Infiltrate the BN precursor into the conductor network via CVI to grow BN nanotubes in situ and form an inner BN nanotube aerogel.

[0021] Step 5: Preparation of outer rare earth stabilized zirconia aerogel by sol-gel combined supercritical drying;

[0022] Step 6: Electrospin SiC nanofibers and CVD-coat them with graphene to weave them into a shielding layer;

[0023] Step 7: Finally, CVD deposition of the SiC outer sheath.

[0024] Furthermore, in step four, the conductor is heated during the CVI process, and the internal temperature of the conductor is higher than that of the surface.

[0025] By adopting the above technical solution, the present invention has the following beneficial effects:

[0026] (1) This invention introduces the concept of high-entropy ceramics into the design of cable conductors. By suppressing high-temperature grain growth and oxidation through the high-entropy effect, it solves the problem of high-temperature oxidation and conductivity decay of conductors. By using the composite interface layer of negative thermal expansion material, the interface is actively compressed at high temperature to suppress crack initiation and achieve high-temperature adaptive sealing. The unity of ultra-low thermal conductivity and high insulation strength is achieved through heterojunction aerogel insulation.

[0027] (2) The present invention adopts a full-process gas phase preparation to avoid interface contamination and interlayer delamination, thereby improving structural consistency and reliability. Attached Figure Description

[0028] To make the content of this invention easier to understand, the invention will be further described in detail below with reference to specific embodiments and accompanying drawings, wherein...

[0029] Figure 1 This is a schematic diagram of the structure of the present invention.

[0030] The labels in the attached diagram are: 1. Cable core, 11. Conductor, 12. Adaptive interface layer, 13. Insulation layer, 2. Shielding layer, 3. Outer sheath, 4. Filler. Detailed Implementation

[0031] To better understand the above technical solutions, the following will provide a detailed explanation of the technical solutions in conjunction with the accompanying drawings and specific implementation methods.

[0032] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0033] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0034] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0035] In the description of the embodiments of the present invention, it should be understood that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of the invention is in use, or the orientation or positional relationship commonly understood by those skilled in the art. They are only used to facilitate the description of the present invention and to simplify the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention.

[0036] In the description of the embodiments of the present invention, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in the present invention based on the specific circumstances. The present invention will be further described below with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solutions of the present invention and should not be used to limit the scope of protection of the present invention.

[0037] Example 1: See Figure 1 The ultra-high temperature cable of this embodiment includes a cable core 1, multiple cable cores 1 are stranded together to form a cable core, a shielding layer 2 is braided around the cable core, an outer sheath 3 is disposed outside the shielding layer 2, and a filler 4 is disposed between the cable core 1 and the shielding layer 2; the cable core 1 includes, from the inside out, a conductor 11, an adaptive interface layer 12 and an insulation layer 13, the conductor 11 is a porous high-entropy carbide / nitride nanowire network, and the adaptive interface layer 12 is Sc2W3O 12 The base adaptive interface layer, wherein the insulating layer 13 is a heterojunction composite of BN nanotube aerogel and rare earth stabilized zirconia aerogel, and partially penetrates into the conductor voids.

[0038] The porous high-entropy carbide / nitride nanowire network includes at least four transition metal elements. In this embodiment, a multi-element (Zr, Hf, Ta, Nb, Mo) carbide / nitride nanowire network is used as conductor 11 to suppress high-temperature grain growth and oxidation through the high-entropy effect.

[0039] In this embodiment, the adaptive interface layer 12 is Sc2W3O. 12 The ZrO2-Y2O3 composite coating has a thickness of 50-200 nm and contains pores through which the gaseous BN precursor can pass. The inner layer of the insulating layer 13 is BN nanotube aerogel with a thickness of 0.5-1 mm, and the outer layer is Al2O3-Y2O3-ZrO2 aerogel with a thickness of 1-2 mm. The shielding layer 2 is a graphene-coated SiC nanofiber braided layer with a braiding density ≥90%. The outer sheath 3 is a SiC sheath with a thickness of 100-300 μm. The filler 4 can be BN nanofiber aerogel felt with a fiber diameter of 50-200 nm and a porosity of 85%-90%; or Al2O3-Y2O3-ZrO2 composite aerogel fiber cotton with a fiber length of 1-5 mm and a porosity of 80%-85%.

[0040] The porous high-entropy carbide / nitride nanowire network has a porosity of 60%-80%. The conductor 11 of this invention is a non-metallic conductive core suitable for extreme environments of 800-1200℃, requiring a balance between conductivity and structural adaptability. If the porosity is too low (e.g., <50%), the nanowire network will be too dense. While this improves short-term conductivity, it also increases weight and concentrates thermal expansion stress. At high temperatures, the dense structure cannot effectively buffer thermal expansion and contraction through its pores, making it prone to cracking due to thermal shock (e.g., quenching at 1200℃), thus disrupting the continuity of conductor 11. If the porosity is too high (e.g., >80%), there will be too few nanowire interlacing points, resulting in discontinuous conductive pathways. This will cause a sharp increase in the resistance of conductor 11, and insufficient structural strength, making the nanowires prone to breakage during bending and losing their conductive function. Therefore, in this embodiment, the porosity is 70%. When the porosity is 70%, there are sufficient interlacing points of the nanowires, the conductive path is continuous, and the resistance change rate at 1200℃ is <3%, meeting the requirements for ultra-high temperature conductivity; the high porosity results in a supporting conductor density of only 1.8-2.2 g / cm³. 3 The pores can buffer thermal expansion stress, and the material does not crack after 50 quenchings at 1200℃. The pores on the surface of conductor 11 can provide adhesion sites for the adaptive interface layer 12. During ALD deposition, the interface layer material can partially penetrate into the pores, enhancing the bonding force between conductor 11 and the interface layer and avoiding interface peeling at high temperatures.

[0041] In one embodiment of this invention, conductor 11 is a (ZrHfTaNbMo)C nanowire network with a porosity of 70% and an electrical conductivity of 2×10⁻⁶. 5 S / m. Adaptive interface layer 12 is Sc2W3O deposited by ALD. 12 The insulation layer 13 consists of ZrO2-Y2O3 with a thickness of 100 nm. The inner layer of the insulation layer 13 is BN nanotube aerogel (thermal conductivity 0.025 W / m·K), and the outer layer is Al2O3-Y2O3-ZrO2 aerogel. The shielding layer 2 is a graphene-coated SiC fiber braided layer, and the outer sheath 3 is a SiC sheath. The ultra-high temperature cable of this embodiment has the following effects: 1. Improved temperature resistance limit: maintaining an insulation resistance > 10 Ω·L in air at 1200℃. 10 1. Ω·m, conductor resistance change rate <3%; 2. Ultra-light and highly flexible: density only 1.8-2.2 g / cm³ 3 3. Self-healing ability: Under high temperature, the Sc2W3O in the adaptive interface layer 12... 12 With its negative thermal expansion characteristics, it complements the thermal expansion behavior of the ZrO2-Y2O3 phase in the interface layer. By actively adapting to the microcrack gaps caused by the thermal deformation of the cable structure, and combined with the viscous flow of the interface layer material, it achieves the filling and sealing of microcracks; 4. High temperature shielding effectiveness: ≥40dB shielding effectiveness in the 1-18GHz frequency band; 5. Thermal shock resistance: No cracking after 50 cycles of quenching at 1200℃ to room temperature.

[0042] This invention introduces the concept of high-entropy ceramics into cable conductor design. By suppressing high-temperature grain growth and oxidation through the high-entropy effect, it solves the problem of high-temperature oxidation and conductivity decay of conductors. By utilizing a composite interface layer of negative thermal expansion material, the interface is actively compressed at high temperatures to suppress crack initiation and achieve high-temperature adaptive sealing. The invention also achieves the unity of ultra-low thermal conductivity and high insulation strength through heterojunction aerogel insulation.

[0043] The ultra-high temperature cable of this embodiment can be applied to scenarios such as spacecraft propulsion systems, nuclear reactor internal monitoring, and ultra-high temperature industrial furnace control.

[0044] During operation, spacecraft propulsion systems often experience temperatures of 900-1100°C around the engine, along with severe temperature fluctuations and an oxidizing environment. This places extremely high demands on the temperature resistance, thermal shock resistance, and stability of the cables used. The ultra-high temperature cable in this embodiment operated continuously for 800 hours in a propulsion system environment at 950°C, maintaining an insulation resistance of 1.2 × 10⁻⁶ throughout. 11 Ω·m or more, far exceeding the system requirement of 1×10 9 With a conductor resistance change rate of only 2.1% (Ω·m), the cable ensures stable electrical signal transmission, preventing signal distortion or equipment malfunction due to abnormal resistance. During propulsion system startup and shutdown, the temperature rapidly rises from room temperature to 950°C and then returns to room temperature. After 30 such thermal shock cycles, the cable showed no cracking or delamination. Testing revealed that the cable's breakdown voltage remained above 5.8kV, meeting the system's insulation performance requirements and effectively preventing propulsion system failures caused by thermal shock-induced cable damage.

[0045] The internal temperature of a nuclear reactor can reach 1000-1200℃, and there is strong radiation and a complex chemical environment. Therefore, cables need to have excellent electromagnetic shielding performance to avoid interference with monitoring signals. In this embodiment, the ultra-high temperature cable, operating in a nuclear reactor environment at 1100℃, withstood a gamma-ray radiation dose of 5×10⁻⁶. 5 After Gy, its various performance indicators remained basically unchanged. The insulation resistance was 8.5 × 10⁻⁶. 10 With a conductor resistance change rate of 2.5% (Ω·m), the cable can stably transmit critical monitoring data such as temperature and pressure inside the nuclear reactor, providing reliable data support for the safe operation of the reactor. In the complex electromagnetic environment of a nuclear reactor, the cable's shielding effectiveness remains consistently between 42-45 dB in the 1-18 GHz frequency band, effectively blocking external electromagnetic interference and the influence of internal reactor electromagnetic signals on the monitoring signals. The signal-to-noise ratio of the monitoring data is improved by more than 30%, and data accuracy is significantly enhanced, avoiding monitoring errors and misjudgments caused by electromagnetic interference.

[0046] Ultra-high temperature industrial furnaces are commonly used in processes such as material sintering, where internal temperatures can reach 1100-1200℃. During operation, these furnaces require cables with a certain degree of flexibility to adapt to the complex structure and installation requirements of the furnace, while also being able to repair micro-cracks that may occur within the furnace. The ultra-high temperature cable in this embodiment has a density of only 2.0 g / cm³. 3 With a bending radius up to four times the cable's outer diameter, it easily adapts to the complex wiring requirements inside ultra-high temperature industrial furnaces, enabling flexible installation within the furnace's confined space. Compared to traditional rigid cables, installation efficiency is improved by over 40%, and the cable structure is not damaged by bending during installation. Inside an industrial furnace at 1150℃, due to thermal expansion and contraction, micro-cracks appear on the cable surface. However, under high temperatures, the Sc2W3O in the cable... 12 A phase change occurred, promptly filling the micro-cracks. Testing 24 hours later revealed that the cable's insulation strength had recovered to 98% of its initial value, ensuring stable transmission of control signals for the industrial furnace and preventing control failures or production interruptions caused by cable cracks.

[0047] Example 2: This example describes a method for preparing an ultra-high temperature cable, comprising the following steps:

[0048] Step 1: Prepare soluble ZrO2-Y2O3 fiber template by electrospinning;

[0049] Step 2: High-entropy carbide / nitride nanowires are grown on the template by CVD, and then the template is dissolved to form a porous conductor 11;

[0050] Step 3: An adaptive interface layer 12 is prepared by ALD deposition on the surface of conductor 11;

[0051] Step 4: Infiltrate the BN precursor into the conductor 11 network via CVI to grow BN nanotubes in situ and form an inner BN nanotube aerogel.

[0052] Step 5: Preparation of outer rare earth stabilized zirconia aerogel by sol-gel combined supercritical drying;

[0053] Step 6: Electrospin SiC nanofibers and CVD-coat graphene to weave them into shielding layer 2;

[0054] Step 7: Finally, CVD deposition of SiC outer sheath 3.

[0055] Conductor 11 is composed of high-entropy carbide / nitride nanowires (such as (ZrHfTaNbMo)C), prepared by "soluble ZrO2-Y2O3 fiber template + CVD growth + template dissolution", ultimately forming a porous conductive network with a porosity of 70%. The porous structure contains a large number of nano- to micro-scale interconnected pores, providing "physical channels" for the BN precursor.

[0056] The soluble ZrO2-Y2O3 template itself needs to have a certain degree of porosity to allow the CVD precursor to permeate. The grown high-entropy carbide nanowires will replicate the pore structure of the template. If the template porosity is too low, the precursor cannot permeate sufficiently, resulting in uneven nanowire growth. If it is too high, the template strength is insufficient, and it is prone to collapse during the CVD process, leading to deformation of the conductor 11 structure. Therefore, a porosity of 70% is the result of matching the template permeation efficiency with the uniformity of nanowire growth.

[0057] The adaptive interface layer 12 is a Sc2W3O layer prepared by ALD (atomic layer deposition). 12 The ZrO2-Y2O3 composite coating has a thickness of only 50–200 nm. The ALD process can form a uniform coating. In this application, the adaptive interface layer 12 is designed as a "thin and microporous" structure, ensuring adhesion to the conductor 11 and the insulating layer 13 while not blocking the pore entrances on the surface of the conductor 11 network, allowing the gaseous BN precursor to penetrate the interface layer and enter the interior of the conductor 11. Traditional dense ALD coatings require high temperatures of 200-300℃ to promote sufficient diffusion and uniform accumulation of precursor atoms on the substrate surface. In this application, to ensure the microporous nature of the adaptive interface layer 12, the ALD deposition temperature is controlled in the low-temperature range of 100-180℃. Simultaneously, by reducing the number of deposition cycles and shortening the precursor pulse time, multi-layered densification of the deposited precursor on the substrate surface is prevented. Furthermore, by extending the inert gas purging time, the micropores are ensured not to be filled during deposition, thus forming a thin and microporous adaptive interface layer 12.

[0058] When the BN precursor is introduced into conductor 11 from the external reaction chamber, a gradient is formed with "high concentration in the reaction chamber and low concentration in the pores of the conductor 11 network". Since the porous structure of the conductor 11 network is interconnected, the precursor molecules will spontaneously diffuse into the pores due to the concentration difference, gradually filling the pore space from the surface of conductor 11 to the interior.

[0059] In the CVI process, the penetration depth and reaction site of the precursor are controlled by gradient heating of the conductor 11 / interface layer composite. In this embodiment, the internal temperature of the conductor 11 is higher than that of the surface: on the one hand, the increased temperature accelerates the thermal motion of the precursor molecules, increases the diffusion rate, and helps them penetrate into the porous network; on the other hand, the formation of BN nanotubes from the BN precursor requires a specific temperature threshold, typically several hundred to nearly a thousand degrees Celsius. Gradient heating can control the reaction to mainly occur inside the pores of the conductor 11, rather than just depositing on the surface, thus avoiding clogging of the pore entrances.

[0060] When the BN precursor penetrates the adaptive interface layer 12, the gaseous BN precursor first contacts the adaptive interface layer 12 (Sc2W3O) on the surface of the conductor 11. 12-ZrO2-Y2O3 coating). Due to the thin interface layer and the presence of micropores, precursor molecules can diffuse through the pores of the interface layer and reach the surface pore entrances of the conductor 11 network.

[0061] After the precursor diffuses and fills the pores on the surface of conductor 11 within the porous network, the BN precursor diffuses inward along the interconnected pores of the conductor 11 network under the combined influence of the concentration and temperature gradients. Since the porosity of the conductor 11 network reaches 70% and the pores are interconnected, the precursor can gradually penetrate into the core region of conductor 11, rather than remaining only on the surface. During this process, the introduction rate of the BN precursor and the pressure in the reaction chamber are controlled to prevent the BN precursor from reacting too quickly at the pore inlet, which could lead to pore blockage, thus ensuring the uniformity and depth of penetration.

[0062] When the BN precursor diffuses into the pores of conductor 11, at an internal temperature of 800-1000℃ and a surface temperature of 600-800℃, conductor 11 itself contains carbide / nitride active sites formed by transition metal elements such as Zr, Hf, Ta, Nb, and Mo (e.g., Zr on the ZrC surface). 3+ HfN surface Hf 4+ By lowering the nucleation energy barrier, the decomposition and recombination reactions of the BN precursor are promoted, and BN nanotubes are grown in situ. As the BN nanotubes continue to grow in the pores, they intertwine and overlap, gradually filling the porous space of conductor 11, and finally forming BN nanotube aerogel. The porous properties of the aerogel complement the pores of the conductor 11 network, which not only retains the ultra-lightweight advantage of the cable, but also achieves the insulation function, while forming a tight bond with the conductor 11 network to avoid interlayer delamination.

[0063] BN nanotube aerogels grow in situ within the pores of conductor 11, forming a network interlocking structure with conductor 11 rather than a simple external coating, thus enhancing the interfacial bonding strength between conductor 11 and insulating layer 13; adaptive interface layer 12 (Sc2W3O) 12 The ZrO2-Y2O3 is sandwiched between the conductor 11 and the BN aerogel. During the infiltration process, the micropores are also partially filled by the BN precursor, forming a transition structure between the interface layer and the BN aerogel, which further suppresses interface cracks at high temperatures.

[0064] This invention employs a full-process gas-phase preparation method to avoid interface contamination and interlayer delamination, thereby improving structural consistency and reliability.

[0065] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above descriptions are merely specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. An ultra-high temperature cable, characterized by: The application relates to a cable, which comprises a cable core (1), a plurality of cable cores (1) are twisted into a cable core, a shielding layer (2) is braided outside the cable core, an outer sheath (3) is arranged outside the shielding layer (2), and a filler (4) is arranged between the cable core (1) and the shielding layer (2); the cable core (1) comprises, from inside to outside, a conductor (11), a self-adaptive interface layer (12) and an insulation layer (13), the conductor (11) is a porous high-entropy carbide / nitride nanowire network, the self-adaptive interface layer (12) is a Sc2W3O 12 base self-adaptive interface layer, and the insulation layer (13) is a heterojunction composite of BN nanotube aerogel and rare earth stabilized zirconium oxide aerogel and partially penetrates into the conductor gap.

2. An ultra-high temperature cable according to claim 1, characterized in that: The porous high-entropy carbide / nitride nanowire network comprises at least four transition metal elements.

3. An ultra-high temperature cable according to claim 1, characterized in that: The porous high-entropy carbide / nitride nanowire network has a porosity of 60%-80%.

4. An ultra-high temperature cable according to claim 1, characterized in that: The adaptive interface layer (12) is Sc2W3O 12 - ZrO2-Y2O3 composite coating.

5. An ultra-high temperature cable according to claim 4, characterized in that: The adaptive interface layer (12) has a thickness of 50-200 nm.

6. An ultra-high temperature electrical cable according to claim 4, characterized in that: The adaptive interface layer (12) comprises pores through which a gas-phase BN precursor can pass.

7. An ultra-high temperature cable according to claim 1, characterized in that: The shielding layer (2) is a graphene-coated SiC nanofiber woven layer.

8. An ultra-high temperature cable according to claim 1, characterized in that: The outer sheath (3) is a SiC sheath.

9. A method for the production of an ultra-high temperature cable for the production of an ultra-high temperature cable according to any one of claims 1 to 8, characterized in that The method comprises the following steps: Step one: preparing a soluble ZrO2-Y2O3 fiber template by electrospinning; Step two: growing high-entropy carbide / nitride nanowires on the template by CVD, and then dissolving the template to form a porous conductor (11); Step three: preparing an adaptive interface layer (12) on the surface of the conductor (11) by ALD deposition; Step four: infiltrating a BN precursor into the conductor (11) network by CVI, in-situ growing BN nanotubes, and forming an inner-layer BN nanotube aerogel; Step five: preparing an outer-layer rare earth stabilized zirconia aerogel by sol-gel combined with supercritical drying; Step six: weaving a shielding layer (2) by electrospinning SiC nanofibers and CVD coating graphene; Step seven: finally, CVD depositing a SiC outer sheath (3).

10. A method of making an ultra-high temperature cable according to claim 9, characterized in that: In step four, the conductor (11) is heated during the CVI process, and the internal temperature of the conductor (11) is higher than the surface.

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