Method for implementing high-dimensional non-gate based on lattice cold atomic system and related device

Abstract

The embodiment of the application discloses a high-dimensional NOT gate implementation method based on a lattice cold atom system and a related device. The method comprises sequentially exciting the first n energy levels of the lattice cold atom system through respective excitation frequencies, exciting k energy levels upwards, exciting the first n-1 energy levels after the upward excitation k-1 energy levels downwards, and exciting the n energy level after the upward excitation to the first energy level, thereby obtaining a high-dimensional NOT gate with a dimension of n, wherein k is an integer greater than n-1, so that the high-dimensional NOT gate is directly realized in the lattice cold atom system. The embodiment of the application is beneficial to reducing the depth of the quantum circuit, thereby reducing the accumulation and amplification of errors, and realizing high-dimensional quantum computing.

Description

Technical Field

[0001] This invention relates to the field of quantum computing technology, and in particular to a method and related apparatus for realizing high-dimensional NOT gates based on a lattice cold atom system. Background Technology

[0002] High-dimensional quantum computing can significantly improve the parallel processing capability of quantum information, exponentially increase the storage capacity of quantum information, and enhance the accuracy of quantum algorithms. High-dimensional quantum gates are a prerequisite for performing high-dimensional quantum computing; however, their implementation is complex due to the higher demands on the manipulation of the physical system and the generation of crosstalk and leakage problems. For example, high-dimensional quantum gates need to manipulate more energy levels, and the transition frequencies between different energy levels need to be independently controlled. Simultaneously, the unitary matrix that needs to be controlled in high-dimensional quantum gates involves multiple parameters, and its calibration complexity far exceeds that of low-dimensional quantum gates. These factors place higher demands on the precise control of the physical system. Furthermore, high-dimensional quantum gate operations can produce transitions to non-target energy levels, and suppressing crosstalk and leakage is a difficult technical problem to solve.

[0003] AND, OR, and NOT are three fundamental logical operations. The unitary matrix controlled by a high-dimensional NOT gate is a cyclic shift matrix, which cannot be directly constructed. Currently, the implementation of high-dimensional NOT gates typically involves introducing auxiliary bits and then synthesizing them using low-dimensional quantum gates (such as one-dimensional and two-dimensional quantum gates). This approach leads to an increase in the depth of the actual quantum circuit and the accumulation and amplification of errors. Therefore, how to directly implement high-dimensional NOT gates to reduce the depth of quantum circuits, thereby reducing the accumulation and amplification of errors, is a pressing technical problem that needs to be solved. Summary of the Invention

[0004] This application provides a method and related apparatus for realizing high-dimensional NOT gates based on a lattice cold atom system. It can directly realize high-dimensional NOT gates, which helps to reduce the depth of quantum circuits, thereby reducing the accumulation and amplification of errors and realizing high-dimensional quantum computing.

[0005] The first aspect of this application provides a method for implementing a high-dimensional NOT gate based on a lattice cold atom system, the method comprising:

[0006] By periodically modulating the potential field of the lattice cold atom system, the first n energy levels of the lattice cold atom system are sequentially excited upward by k-1 energy levels through their respective excitation frequencies.

[0007] The first n-1 energy levels after upward excitation are down-excited to k-1 energy levels, and the nth energy level after upward excitation is down-excited to the first energy level, resulting in a high-dimensional NOT gate of dimension n, where k is an integer greater than n.

[0008] Optionally, before periodically modulating the potential field of the lattice cold atom system to sequentially excite the first n energy levels of the lattice cold atom system upwards by k energy levels through their respective excitation frequencies, the method further includes:

[0009] The parity change between the energy level orbitals before and after excitation is determined based on the parity of k.

[0010] The periodic oscillation modulation signal is determined based on the parity change between the energy level orbitals before and after excitation.

[0011] Optionally, determining the parity change between the energy level orbitals before and after excitation based on the parity of k includes:

[0012] If k is an odd number, then during upward excitation, the parity between the energy level orbitals before and after excitation is reversed; during downward excitation, for the first n-1 energy levels, the parity between the energy level orbitals before and after excitation remains unchanged.

[0013] If k is an even number, then during upward excitation, the parity between the energy level orbitals before and after excitation remains unchanged; during downward excitation, for the first n-1 energy levels, the parity between the energy level orbitals before and after excitation is reversed.

[0014] During the downward excitation process, for the nth energy level, if n+k is even, then the parity between the energy level orbitals before and after excitation is reversed; if n+k is odd, then the parity between the energy level orbitals before and after excitation remains unchanged.

[0015] Optionally, determining the periodic oscillation modulation signal based on the parity change between the energy level orbitals before and after excitation includes:

[0016] If k is an odd number, then the upward-excited periodic oscillation modulation signal is determined as follows:

[0017] ,

[0018] The downward-excited periodic oscillation modulation signal is determined as follows:

[0019] ,

[0020] in, For spatial location, For time, For the first The amplitude of the periodic modulation of each energy level. For the first The energy level and the first The energy difference between energy levels For the first The amplitude of the periodic modulation of each energy level. For the first The energy level and the first The energy difference between energy levels The laser wavelength that induces the optical lattice. For switching functions, For the first The energy level is excited to the first The time of each energy level for The maximum value, For the first The energy level is excited to the first The time of each energy level.

[0021] Optionally, determining the periodic oscillation modulation signal based on the parity change between the energy level orbitals before and after excitation includes:

[0022] If k is an even number, then the upward-excited periodic oscillation modulation signal is determined as follows:

[0023] ,

[0024] The downward-excited periodic oscillation modulation signal is determined as follows:

[0025] ,

[0026] in, For spatial location, For time, For the first The amplitude of the periodic modulation of each energy level. For the first The energy level and the first The energy difference between energy levels For the first The amplitude of the periodic modulation of each energy level. For the first The energy level and the first Energy difference between energy levels To induce the laser wavelength of the optical lattice, For switching functions, For the first The energy level is excited to the first The time of each energy level for The maximum value, For the first The energy level is excited to the first The time of each energy level.

[0027] Optionally, determining the periodic oscillation modulation signal based on the parity change between the energy level orbitals before and after excitation includes:

[0028] If n+k is even, then the periodic oscillation modulation signal of the (n+k)th energy level is determined as follows:

[0029]

[0030] If n+k is odd, then the periodic oscillation modulation signal of the (n+k)th energy level is determined as follows:

[0031]

[0032] in, For spatial location, For time, For the first The amplitude of modulation over +k energy level periods For the first +k energy levels and the first Energy difference between energy levels To induce the laser wavelength of the optical lattice, For switching functions, For the first The time required to excite +k energy levels to the first energy level.

[0033] A second aspect of this application provides a high-dimensional NOT gate implementation device based on a lattice cold atom system, the device comprising:

[0034] A quantum gate generation unit is used to periodically modulate the potential field of a lattice cold atom system to sequentially excite the first n energy levels of the lattice cold atom system upwards by k-1 energy levels through their respective excitation frequencies; then, the first n-1 energy levels after upward excitation are excited downwards by k-1 energy levels, and the nth energy level after upward excitation is excited downwards to the first energy level, to obtain a high-dimensional NOT gate with dimension n, where k is an integer greater than n.

[0035] A third aspect of this application provides an electronic device, including: a processor and a memory;

[0036] The processor is connected to a memory, wherein the memory is used to store computer programs and the processor is used to invoke the computer programs to execute the methods as described in the first aspect of the embodiments of this application.

[0037] A fourth aspect of this application provides a computer-readable storage medium storing a computer program, the computer program including program instructions, which, when executed by a processor, perform the method as described in the first aspect of this application.

[0038] The high-dimensional NOT gate implementation method based on a lattice cold atom system provided in this application involves periodically modulating the potential field of the lattice cold atom system. The first n energy levels of the system are sequentially excited upwards by k energy levels using their respective excitation frequencies. Then, the first n-1 energy levels after upward excitation are excited downwards by k-1 energy levels, and the nth energy level after upward excitation is excited downwards to the first energy level, resulting in a high-dimensional NOT gate of dimension n, where k is an integer greater than n-1. This directly realizes a high-dimensional NOT gate within the lattice cold atom system. Compared to traditional methods, this eliminates the need for additional auxiliary qubits and synthesis via low-dimensional quantum gates, thus reducing the depth of the quantum circuit and minimizing error accumulation and amplification, thereby enabling high-dimensional quantum computing.

[0039] Based on the same inventive concept, this application also provides a high-dimensional NOT gate implementation device, electronic device, and computer-readable storage medium based on a lattice cold atom system. The beneficial effects are described in the above method embodiments and will not be repeated here. Attached Figure Description

[0040] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0041] Figure 1 A flowchart illustrating a high-dimensional NOT gate implementation method based on a lattice cold atom system provided in one embodiment of this application is shown.

[0042] Figure 2 This illustration shows a schematic diagram of the spatial stretching of the first three orbits of a three-dimensional qubit provided in one embodiment of this application;

[0043] Figure 3 This illustration shows a pulse sequence diagram of a three-dimensional X-gate provided in one embodiment of this application;

[0044] Figure 4 The following is a pulse diagram of a three-dimensional X-gate provided in one embodiment of this application;

[0045] Figure 5 This paper illustrates the orbital dynamics evolution of the first three orbits of a three-dimensional qubit provided in one embodiment of this application.

[0046] Figure 6 This paper shows a schematic diagram of the structure of a high-dimensional NOT gate implementation device based on a lattice cold atom system provided in one embodiment of this application;

[0047] Figure 7A schematic diagram of the structure of a computer device provided in one embodiment of this application is shown. Detailed Implementation

[0048] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0049] Classical computers use transistors to encode information in binary data, such as bits, where each bit can represent a value of 1 or 0. These 1s and 0s act as switches to drive the functions of a classical computer. If there are n bits of data, there are 2^n possible classical states, and one state is represented at a time.

[0050] Quantum computers use quantum processors that operate on data represented by qubits, also known as quantum bits. A single qubit can represent the classical binary states "0" or "1", or a superposition of "0" and "1". Because it can represent a superposition of "0" and "1", a qubit can represent both "0" and "1" states simultaneously. For example, if there are n bits of data, then... A number of quantum states can be represented simultaneously. Furthermore, qubits in a superposition can be correlated with each other, a phenomenon known as entanglement. The state of one qubit (whether 1, 0, or both) can depend on the state of another qubit, and more information can be encoded within two entangled qubits. Based on the principles of superposition and entanglement, qubits enable quantum computers to perform functions that might be relatively complex and time-consuming for classical computers. High-dimensional quantum computing is a technological path in quantum information science that breaks through the traditional binary limitation. It utilizes quantum systems with dimensions greater than 2 to replace traditional two-dimensional qubits, enhancing information processing capabilities by manipulating more energy level states.

[0051] Cold atom lattice systems are the core experimental platform for ultracold atom physics and quantum simulation. They utilize laser beams to construct periodic "optical lattices" in a vacuum, allowing ultracold atoms (such as bosons) to be visualized. 87 Rb、 6 Li et al. confined these atoms in artificially designed lattice sites to simulate the behavior of strongly correlated quantum materials in condensed matter physics. Taking a one-dimensional lattice cold atom system as an example, each potential well contains one cold atom, and each cold atom can occupy a different orbital, with each orbital corresponding to an energy level. Here, we only consider a single potential well system, where the Hamiltonian of the system is:

[0052] ,

[0053] Where m is the atomic mass, For the potential well depth, Let be the wave vector. Different lattice orbitals have different spatial spreads and different parity characteristics. It can be seen that the parity corresponding to the odd-numbered orbitals is even-parity, and the parity corresponding to the even-numbered orbitals is even-parity.

[0054] In an n-dimensional qubit system, the first n energy levels contribute one n-dimensional qubit, i.e.:

[0055]

[0056] The corresponding matrix form of the n-dimensional quantum X gate is:

[0057] ,

[0058] The corresponding cyclic mapping is:

[0059]

[0060] This high-dimensional quantum gate is a cyclic shift matrix and cannot be constructed directly; it requires the introduction of other auxiliary energy levels. Theoretically, lattice cold atom systems possess a sufficient number of energy levels, thus allowing the construction of high-dimensional NOT gates.

[0061] Please refer to Figure 1 This document illustrates a flowchart of a high-dimensional NOT gate implementation method based on a lattice cold atom system, according to an embodiment of this application. This method can be applied to computer devices, which refer to electronic devices capable of data computation and processing. The method may include the following steps:

[0062] Step 101: By periodically modulating the potential field of the lattice cold atom system, the first n energy levels of the lattice cold atom system are sequentially excited upward by k energy levels through their respective excitation frequencies.

[0063] The first n energy levels will be excited in the following manner:

[0064]

[0065] To prevent overlap between energy levels, since the energy levels in the embodiments of this application range from... Therefore, k must be an integer greater than n-1.

[0066] Step 102: Excite the first n-1 energy levels after upward excitation down to k-1 energy levels, and excite the nth energy level after upward excitation down to the first energy level, to obtain a high-dimensional NOT gate with dimension n, where k is an integer greater than n-1.

[0067] That is, the n energy levels after upward excitation are excited in the following way:

[0068]

[0069] Periodic modulation can be achieved by rapidly oscillating the laser intensity using devices such as an acousto-optic modulator (AOM), thereby increasing the depth of the lattice potential well. By periodically varying the frequency, the transition frequency between the target energy level and the current energy level is adjusted to target a specific orbital. The lattice constant 'a' of the cold atom system is determined by the laser wavelength. Therefore, the lattice constant is determined to be a = λ / 2.

[0070] Because orbital degrees of freedom possess specific parity characteristics, excitation modes, in addition to ensuring frequency matching, must also adhere to parity constraints. These constraints are: when the difference between two energy levels is an odd number of energy levels, the parity changes during excitation; when the difference is an even number of energy levels, the parity remains unchanged. Therefore, the periodic oscillation modulation signals for upward and downward excitation can be determined based on the parity of the energy level difference.

[0071] Therefore, further, before periodically modulating the potential field of the lattice cold atom system to sequentially excite the first n energy levels of the lattice cold atom system upwards by k energy levels through their respective excitation frequencies, the method further includes:

[0072] The parity change between the energy level orbitals before and after excitation is determined based on the parity of k.

[0073] The periodic oscillation modulation signal is determined based on the parity change between the energy level orbitals before and after excitation.

[0074] Specifically, determining the parity change between the energy level orbitals before and after excitation based on the parity of k includes:

[0075] If k is an odd number, then during upward excitation, the parity between the energy level orbitals before and after excitation is reversed; during downward excitation, for the first n-1 energy levels, the parity between the energy level orbitals before and after excitation remains unchanged.

[0076] If k is an even number, then during upward excitation, the parity between the energy level orbitals before and after excitation remains unchanged; during downward excitation, for the first n-1 energy levels, the parity between the energy level orbitals before and after excitation is reversed.

[0077] During the downward excitation process, for the nth energy level, if n+k is even, then the parity between the energy level orbitals before and after excitation is reversed; if n+k is odd, then the parity between the energy level orbitals before and after excitation remains unchanged.

[0078] For example, if k is an odd number, then the upward-excited periodic oscillation modulation signal is determined as:

[0079] ,

[0080] The downward-excited periodic oscillation modulation signal is determined as follows:

[0081] ,

[0082] in, For spatial location, For time, For the first The amplitude of the periodic modulation of each energy level. For the first The energy level and the first The energy difference between energy levels For the first The amplitude of the periodic modulation of each energy level. For the first The energy level and the first The energy difference between energy levels The laser wavelength that induces the optical lattice. For switching functions, For the first The energy level is excited to the first The time of each energy level for The maximum value, For the first The energy level is excited to the first The time of each energy level.

[0083] Among them, the switching function

[0084]

[0085] The other switching functions are similar and will not be elaborated here.

[0086] For example, if k is an even number, then the upward-excited periodic oscillation modulation signal is determined as:

[0087] ,

[0088] The downward-excited periodic oscillation modulation signal is determined as follows:

[0089] ,

[0090] in, For spatial location, For time, For the first The amplitude of the periodic modulation of each energy level. For the first The energy level and the first The energy difference between energy levels For the first The amplitude of the periodic modulation of each energy level. For the first The energy level and the first Energy difference between energy levels To induce the laser wavelength of the optical lattice, For switching functions, For the first The energy level is excited to the first The time of each energy level for The maximum value, For the first The energy level is excited to the first The time of each energy level.

[0091] For example, if n+k is even, then the periodic oscillation modulation signal of the nth energy level is determined as follows:

[0092]

[0093] If n+k is odd, then the periodic oscillation modulation signal of the nth energy level is determined as follows:

[0094]

[0095] in, For spatial location, For time, For the first The amplitude of the periodic modulation of each energy level. For the first The energy level and the first Energy difference between energy levels To induce the laser wavelength of the optical lattice, For switching functions, For the first The time it takes for each energy level to be excited to the first energy level.

[0096] Taking a three-dimensional qubit as an example, the first three orbitals are encoded, namely:

[0097] , , .

[0098] For the corresponding spatial expansion form, please refer to Figure 2 .

[0099] Correspondingly The matrix form of the gate is:

[0100] ,

[0101] Through this quantum gate, the corresponding basis vectors can be transformed into:

[0102]

[0103] As can be seen, this high-dimensional quantum gate is a cyclic shift matrix, which cannot be constructed directly and requires the introduction of other auxiliary energy levels. Therefore, it is constructed in the following way:

[0104] Step 1: Excite the first three energy levels (n=3) sequentially to three higher energy levels (k=3), that is:

[0105]

[0106] The form of the periodic oscillation modulation signal is:

[0107]

[0108] in:

[0109]

[0110] Step 2: After upward excitation, the first two higher energy levels (n-1=3-1=2) are then sequentially downward excited by two more energy levels (k-1=3-1=2) to lower energy levels, i.e.:

[0111] The form of the periodic oscillation modulation signal is:

[0112]

[0113] in:

[0114]

[0115] Simultaneously, the second step will also excite the third energy level (n=3) after upward excitation down to the first energy level, that is:

[0116]

[0117] The form of the periodic oscillation modulation signal is:

[0118]

[0119] in:

[0120]

[0121] At this point, the system performs the first step of activation; at time [time missing]... At this point, the system completes the first stage of excitation, at which point the second stage of excitation begins. After the second stage of excitation ends, the 3D X-gate is completed. See the pulse sequence diagram for the 3D X-gate. Figure 3 Yellow represents the first stage, and red represents the second stage. Each stage consists of three pulses. In the first stage, all three pulses act simultaneously to complete the process. In the second stage, three pulses operate simultaneously to complete the process. See the complete pulse timing diagram. Figure 4 The three pulses at the bottom represent the first stage, and the three pulses at the top represent the second stage. The excitation intensity decreases from bottom to top by 0.5. 0.16 0.96 0.303 0.274 5.2 In such processes Throughout the entire process, .

[0122] Ultimately, the following can be achieved:

[0123]

[0124] See the results of the dynamic evolution. Figure 5 (a) represents (b) represents (c) represents This shows that, under the action of two different frequencies of periodic lattice modulation in two stages, the system achieved... Cyclic mapping, also known as 3D X-gate.

[0125] As can be seen, the high-dimensional NOT gate implementation method based on a lattice cold atom system provided in this application periodically modulates the potential field of the lattice cold atom system. The first n energy levels of the lattice cold atom system are sequentially excited upwards by k energy levels using their respective excitation frequencies. Then, the first n-1 energy levels after upward excitation are excited downwards by k-1 energy levels, and the nth energy level after upward excitation is excited downwards to the first energy level, resulting in a high-dimensional NOT gate of dimension n, where k is an integer greater than n. This directly realizes a high-dimensional NOT gate in the lattice cold atom system. Compared to traditional methods, it does not require the introduction of additional auxiliary qubits or synthesis through low-dimensional quantum gates, thus reducing the depth of the quantum circuit and minimizing error accumulation and amplification, thereby achieving high-dimensional quantum computing.

[0126] Figure 6 A schematic diagram of a high-dimensional NOT gate implementation device based on a lattice cold atom system provided in one embodiment of this application is shown. The device includes:

[0127] The quantum gate generation unit 601 is used to periodically modulate the potential field of the lattice cold atom system to first excite the first n energy levels of the lattice cold atom system upwards by k energy levels through their respective excitation frequencies; then excite the first n-1 energy levels downwards by k-1 energy levels after upward excitation, and excite the nth energy level after upward excitation downwards to the first energy level, thereby obtaining a high-dimensional NOT gate with dimension n, where k is an integer greater than n-1.

[0128] Optionally, before the step of periodically modulating the potential field of the lattice cold atom system to sequentially excite the first n energy levels of the lattice cold atom system upwards by k energy levels through their respective excitation frequencies, the device further includes:

[0129] The modulation signal generation unit 602 is used to determine the parity change between the energy level orbits before and after excitation based on the parity of k; and to determine the periodic oscillation modulation signal based on the parity change between the energy level orbits before and after excitation.

[0130] Figure 7 The diagram illustrates the structure of a computer device provided in one embodiment of this application, including a memory and a processor. The memory stores a computer program, and the processor executes the computer program to implement the functions of the computer system based on the high-dimensional NOT gate implementation method of the lattice cold atom system in any of the above embodiments.

[0131] This application also provides a computer-readable storage medium storing a computer program thereon, which, when executed by a computer, causes the computer to perform the functions of the computer system of the high-dimensional NOT gate implementation method based on the lattice cold atom system in any of the above embodiments.

[0132] This application also provides a computer program product containing instructions that, when executed by a computer, cause the computer to perform the functions of the computer system based on the high-dimensional NOT gate implementation method of the lattice cold atom system in any of the above embodiments.

[0133] It is understood that the specific examples in this application are only intended to help those skilled in the art better understand the implementation methods of this application, and are not intended to limit the scope of the invention.

[0134] It is understood that in the various embodiments of this application, the sequence number of each process does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not limit the implementation process of the embodiments of this application in any way.

[0135] It is understood that the various implementation methods described in this application can be implemented individually or in combination, and the implementation methods in this application are not limited in this respect.

[0136] Unless otherwise stated, all technical and scientific terms used in the embodiments of this application have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used in this application is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. The term "and / or" as used in this application includes any and all combinations of one or more of the associated listed items. The singular forms "a," "the," and "the" as used in the embodiments of this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise.

[0137] It is understood that the processor in the embodiments of this application can be an integrated circuit chip with signal processing capabilities. During implementation, each step of the above method embodiments can be completed by the integrated logic circuits in the processor's hardware or by instructions in software form. The processor can be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. It can implement or execute the methods, steps, and logic block diagrams disclosed in the embodiments of this application. The general-purpose processor can be a microprocessor or any conventional processor. The steps of the methods disclosed in the embodiments of this application can be directly embodied in the execution of a hardware decoding processor, or executed by a combination of hardware and software modules in the decoding processor. The software modules can be located in random access memory, flash memory, read-only memory, programmable read-only memory, electrically erasable programmable memory, registers, or other mature storage media in the art. This storage medium is located in memory; the processor reads information from the memory and, in conjunction with its hardware, completes the steps of the above method.

[0138] It is understood that the memory in the embodiments of this application may be volatile memory or non-volatile memory, or may include both volatile and non-volatile memory. Specifically, non-volatile memory may be read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), or flash memory. Volatile memory may be random access memory (RAM). It should be noted that the memory in the systems and methods described herein is intended to include, but is not limited to, these and any other suitable types of memory.

[0139] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0140] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the aforementioned method implementations, and will not be repeated here.

[0141] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the mutual coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.

[0142] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment, depending on actual needs.

[0143] In addition, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0144] If a function is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0145] The above are merely specific embodiments of this application, but the scope of protection of this invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this invention should be determined by the scope of the claims.

Claims

1. A method for realizing a high-dimensional NOT gate based on a lattice cold atom system, characterized in that, The method includes: By periodically modulating the potential field of the lattice cold atom system, the first n energy levels of the lattice cold atom system are sequentially excited upward by k energy levels through their respective excitation frequencies. The first n-1 energy levels after upward excitation are down-excited to k-1 energy levels, and the nth energy level after upward excitation is down-excited to the first energy level, resulting in a high-dimensional NOT gate with dimension n, where k is an integer greater than n-1; The method further includes, before periodically modulating the potential field of the lattice cold atom system to sequentially excite the first n energy levels of the lattice cold atom system upwards by k energy levels through their respective excitation frequencies: The parity change between the energy level orbitals before and after excitation is determined based on the parity of k. The periodic oscillation modulation signal is determined based on the parity change between the energy level orbits before and after excitation. The step of determining the parity change between the energy level orbitals before and after excitation based on the parity of k includes: If k is an odd number, then during upward excitation, the parity between the energy level orbitals before and after excitation is reversed; during downward excitation, for the first n-1 energy levels, the parity between the energy level orbitals before and after excitation remains unchanged. If k is an even number, then during upward excitation, the parity between the energy level orbitals before and after excitation remains unchanged; during downward excitation, for the first n-1 energy levels, the parity between the energy level orbitals before and after excitation is reversed. During the downward excitation process, for the nth energy level, if n+k is even, then the parity between the energy level orbitals before and after excitation is reversed; if n+k is odd, then the parity between the energy level orbitals before and after excitation remains unchanged.

2. The method according to claim 1, characterized in that, The step of determining the periodic oscillation modulation signal based on the parity change between the energy level orbitals before and after excitation includes: If k is an odd number, then the upward-excited periodic oscillation modulation signal is determined as follows: ， The downward-excited periodic oscillation modulation signal is determined as follows: ， in, For spatial location, For time, For the first The amplitude of the periodic modulation of each energy level. For the first The energy level and the first The energy difference between energy levels For the first The amplitude of the periodic modulation of each energy level. For the first The energy level and the first The energy difference between energy levels To induce the laser wavelength of the optical lattice, For switching functions, For the first The energy level is excited to the first The time of each energy level for The maximum value, For the first The energy level is excited to the first The time of each energy level.

3. The method according to claim 1, characterized in that, The step of determining the periodic oscillation modulation signal based on the parity change between the energy level orbitals before and after excitation includes: If k is an even number, then the upward-excited periodic oscillation modulation signal is determined as follows: ， The downward-excited periodic oscillation modulation signal is determined as follows: ， in, For spatial location, For time, For the first The amplitude of the periodic modulation of each energy level. For the first The energy level and the first The energy difference between energy levels For the first The amplitude of the periodic modulation of each energy level. For the first The energy level and the first The energy difference between energy levels To induce the laser wavelength of the optical lattice, For switching functions, For the first The energy level is excited to the first The time of each energy level for The maximum value, For the first The energy level is excited to the first The time of each energy level.

4. The method according to claim 1, characterized in that, The step of determining the periodic oscillation modulation signal based on the parity change between the energy level orbitals before and after excitation includes: If n+k is even, then the periodic oscillation modulation signal of the (n+k)th energy level is determined as follows: If n+k is odd, then the periodic oscillation modulation signal of the (n+k)th energy level is determined as follows: in, For spatial location, For time, For the first The amplitude of modulation over +k energy level periods For the first +k energy levels and the first Energy difference between energy levels To induce the laser wavelength of the optical lattice, For switching functions, For the first The time required to excite +k energy levels to the first energy level.

5. A high-dimensional NOT gate realization device based on a lattice cold atom system, characterized in that, The device includes: A quantum gate generation unit is used to periodically modulate the potential field of a lattice cold atom system to sequentially excite the first n energy levels of the lattice cold atom system upwards by k energy levels through their respective excitation frequencies; then excite the first n-1 energy levels downwards by k-1 energy levels after upward excitation, and excite the nth energy level after upward excitation downwards to the first energy level, thereby obtaining a high-dimensional NOT gate with dimension n, where k is an integer greater than n-1; Before periodically modulating the potential field of the lattice cold atom system to sequentially excite the first n energy levels of the lattice cold atom system upwards by their respective excitation frequencies to excite k energy levels, the device further includes: The modulation signal generation unit is used to determine the parity change between the energy level orbits before and after excitation based on the parity of k; and to determine the periodic oscillation modulation signal based on the parity change between the energy level orbits before and after excitation. The step of determining the parity change between the energy level orbitals before and after excitation based on the parity of k includes: If k is an odd number, then during upward excitation, the parity between the energy level orbitals before and after excitation is reversed; during downward excitation, for the first n-1 energy levels, the parity between the energy level orbitals before and after excitation remains unchanged. If k is an even number, then during upward excitation, the parity between the energy level orbitals before and after excitation remains unchanged; during downward excitation, for the first n-1 energy levels, the parity between the energy level orbitals before and after excitation is reversed. During the downward excitation process, for the nth energy level, if n+k is even, then the parity between the energy level orbitals before and after excitation is reversed; if n+k is odd, then the parity between the energy level orbitals before and after excitation remains unchanged.

6. An electronic device, characterized in that, include: Processor and memory; The processor is connected to a memory, wherein the memory is used to store a computer program, and the processor is used to invoke the computer program to perform the method as described in any one of claims 1-4.

7. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program, the computer program including program instructions that, when executed by a processor, perform the method as described in any one of claims 1-4.

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