Bonding device

Abstract

The purpose of the present invention is to improve the reliability of mounting by bonding or eutectic bonding. The bonding apparatus includes: a transport mechanism that transports a substrate; a bonding tool for bonding an electronic component to the substrate; and an anti-oxidation path having a wall portion extending along the transport mechanism and surrounding the transport mechanism, the anti-oxidation path having: an introduction port into which the substrate is introduced; an opening part capable of approaching and separating the bonding tool from the substrate; a gas introduction port for introducing an antioxidant gas to the inside of the wall part; and an electrode having a passage hole through which the antioxidant gas passes on the inner side of the wall part, and converting the antioxidant gas into plasma when the antioxidant gas passes through the passage hole.

Description

TECHNICAL FIELD

[0001] The present application relates to a bonding apparatus. BACKGROUND

[0002] For example, in Patent Literature 1, a device is disclosed which performs die bonding using an external gas shielding unit which maintains a sample to be carried by a substrate carrying unit in an environment (hereinafter, referred to as "inert environment") of a gas in which an external gas is shut off and an inert gas such as nitrogen or argon and a reducing gas such as hydrogen are mixed. The device includes a plasma processing member which generates plasma in an atmospheric pressure and processes a surface of a wire-shaped solder which is sent out with the plasma. The device guides the wire-shaped solder whose surface has been processed with the plasma processing member to a prescribed position on a sample in the inert environment inside the external gas shielding unit without being exposed to the external gas. In this way, the device removes an oxide film formed on the surface of the wire-shaped solder with the plasma, and thereafter mounts a semiconductor chip on the solder in the inert environment so that it is not oxidized, and thus can improve the quality of solder bonding.

[0003] [Patent Literature]

[0004] [Patent Literature]

[0005] [Patent Literature 1] Japanese Patent Laid-Open No. 2013-21163 SUMMARY

[0006] [Problems to be Solved by the Invention]

[0007] However, in the device described in Patent Literature 1, when bonding is performed in the inert environment of the external gas shielding unit, it is sometimes difficult to sufficiently obtain an oxidation resistance and reduction effect in the inert environment of the external gas shielding unit, and a substrate, an electronic component, and a bonding member are oxidized, and the reliability of bonding is reduced. Further, in a case where a semiconductor chip and a substrate are heated and the semiconductor chip is mounted on the substrate by eutectic bonding, a substrate formed of, for example, copper is sometimes oxidized. When eutectic bonding is performed on the semiconductor chip on the oxidized substrate, the bonding of the substrate and the semiconductor chip is deteriorated, and the reliability of a product after bonding is reduced.

[0008] The present application has been made in view of such circumstances, and an object thereof is to provide a bonding apparatus which can improve the reliability of mounting based on bonding or eutectic bonding.

[0009] [Technical Means for Solving the Problems]

[0010] The joining device of one embodiment of the present application includes a conveyance mechanism that conveys a substrate, a joining tool that joins an electronic component to the substrate, an oxidation-preventing path that has a wall portion extending along the conveyance mechanism and surrounding the conveyance mechanism, the oxidation-preventing path having a guide inlet that guides the substrate, an opening portion that enables approach and separation of the joining tool to and from the substrate, a gas guide inlet that guides an oxidation-preventing gas to an inner side of the wall portion, and an electrode that has a through hole for the oxidation-preventing gas to pass through on the inner side of the wall portion, and that causes the oxidation-preventing gas that has passed through the through hole to be plasma-processed in a plasma-processed region.

[0011] [Effects of the Invention]

[0012] According to the present application, a joining device capable of improving reliability of mounting based on joining or eutectic bonding can be provided. BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1 FIG. 1 is a perspective view showing a joining device of one embodiment of the present application.

[0014] Figure 2 FIG. 2 is a plan view of an oxidation-preventing path of one embodiment of the present application.

[0015] Figure 3 FIG. 3 is a cross-sectional view of the oxidation-preventing path of one embodiment of the present application.

[0016] Figure 4 FIG. 4 is a perspective view of an electrode.

[0017] Figure 5 FIG. 5 is a cross-sectional view of the electrode.

[0018] Figure 6 FIG. 6 is a flowchart of the operation of the joining device.

[0019] Figure 7 FIG. 7 is a view showing a situation in a joining process.

[0020] REFERENCE SIGNS

[0021] 10: joining device

[0022] 100: oxidation-preventing path

[0023] 101, 102, 143: space

[0024] 110: furnace wall

[0025] 111: inlet

[0026] 112: outlet

[0027] 113: opening portion

[0028] 120: gas guide inlet

[0029] 130: Mesh filter

[0030] 140: Electrode

[0031] 141: First electrode

[0032] 141a, 142a: Through holes

[0033] 141b: Protrusion

[0034] 142: Second electrode

[0035] 144: Insulator

[0036] 145: Dielectric

[0037] 150: AC power supply

[0038] 200: Moving and transporting organization

[0039] 210: Heater

[0040] 300: Joining tool

[0041] 310: Connector

[0042] 400: Camera Unit

[0043] BM: Joining component

[0044] CH: Electronic Components

[0045] L1, L2: Distance

[0046] S100, S101, S102, S103, S104, S105, S106: Steps

[0047] SB: Substrate

[0048] SBa: Main surface

[0049] X, Y, Z: Axes Detailed Implementation

[0050] The embodiments of the present invention will be described below. In the following drawings, the same or similar constituent elements are represented by the same or similar symbols. The drawings are illustrative, and the dimensions or shapes of the parts are schematic; they should not be construed as limiting the scope of the present invention to the described embodiments.

[0051] <<Structure of the Connecting Device 10>>

[0052] First, refer to Figures 1 to 3 The structure of the joining device 10 according to one embodiment of the present invention will be described. Figure 1is a perspective view of a bonding apparatus 10 that represents one embodiment of the present application. Figure 2 is a plan view of an oxidation-preventing path 100 of one embodiment of the present application.

[0053] The bonding apparatus 10 has a structure that plasma-izes an oxidation-preventing gas in the space of the oxidation-preventing path 100, and performs bonding in the space of the oxidation-preventing path 100 filled with the plasma-ized oxidation-preventing gas (hereinafter, referred to as "oxidation-preventing plasma gas").

[0054] The oxidation-preventing gas is, for example, a synthetic gas in which a reducing gas such as hydrogen is mixed in an inert gas such as nitrogen, but is not limited thereto. For example, the oxidation-preventing gas can be a mixed gas of helium and hydrogen, or a mixed gas of argon and hydrogen, or the like.

[0055] Such a bonding apparatus 10 can improve the oxidation-preventing and reducing effects in eutectic bonding, for example, compared to a case in which the oxidation-preventing gas that is not plasma-ized fills the space of the oxidation-preventing path 100. Thus, the bonding apparatus 10 can realize bonding of the electronic component CH to the device of the substrate SB with high reliability.

[0056] Further, since the bonding apparatus 10 can improve the oxidation-preventing and reducing effects by plasma-izing the oxidation-preventing gas, it is possible to reduce the hydrogen content of the oxidation-preventing gas (or to provide only nitrogen), and thus it is possible to reduce the cost in bonding.

[0057] As shown in Figure 1 , the bonding apparatus 10 includes an oxidation-preventing path 100, a conveyance mechanism 200, a bonding tool 300, and an imaging unit 400. Figure 1 In the following description, for convenience, orthogonal axes including X, Y, and Z axes are labeled.

[0058] The X-axis direction is a direction in which the conveyance mechanism 200 conveys the substrate SB, and the substrate SB is conveyed from the negative direction side of the X-axis toward the positive direction side of the X-axis. The Y-axis direction is a direction that, together with the X-axis direction, defines a pair of faces of the substrate SB along which the substrate SB is conveyed by the conveyance mechanism 200. The Z-axis direction is a vertical direction with respect to the substrate SB conveyed by the conveyance mechanism 200, and is a direction in which the bonded substrate SB and the electronic component CH are arranged. In addition, the Y-axis direction is a direction orthogonal to the X-axis direction and the Z-axis direction.

[0059] As for the X, Y, and Z axes labeled in Figure 2 the following drawings, the same applies. In the following description, a plan view from the negative direction side of the Z-axis will be simply referred to as a "plan view". In addition, the negative direction side of the X-axis will be sometimes expressed as "front", the positive direction side of the X-axis will be sometimes expressed as "back", the negative direction side of the Z-axis will be sometimes expressed as "up", and the positive direction side of the Z-axis will be sometimes expressed as "down", but this does not limit the orientation of the bonding apparatus 10 or the like.

[0060] The bonding device 10 bonds the electronic component CH to the substrate SB via the bonding member BM. The substrate SB has a main surface SBa, which is the bonding surface for bonding the electronic component CH.

[0061] The substrate SB is, for example, a copper (Cu) alloy lead frame, but is not limited to this. The substrate SB may also be, for example, an iron (Fe) alloy lead frame, a ceramic substrate, or a semiconductor substrate.

[0062] Electronic components CH, for example, are semiconductor chips.

[0063] The bonding component BM is, for example, a gold-tin (Au-Sn) eutectic alloy. The bonding component BM may also be, for example, a gold-silicon (Au-Si) eutectic alloy, solder, organic adhesive, or inorganic adhesive.

[0064] The bonding device 10 bonds electronic components CH to the substrate SB in an antioxidant plasma gas environment within the antioxidant circuit 100.

[0065] A bonding tool is used to bond 300 pairs of substrates (SB) to electronic components (CH). For example... Figure 1 As shown, the bonding head 310 of the bonding tool 300 transports and picks up the electronic component CH, passes through the opening 113 and enters the substrate SB, where the electronic component CH is bonded. For example, if the bonding member BM is a eutectic alloy, the bonding head 310 has a pressurizing function that applies pressure to the bonding member BM via the electronic component CH. The bonding head 310, holding the electronic component CH, enters the substrate SB through the opening 113.

[0066] The camera unit 400 captures images of the substrate SB or the electronic component CH bonded to the substrate SB. For example, based on the acquired images, the camera unit 400 compares the bonding area of ​​the substrate SB with the camera's field of view and corrects the landing position of the bonding head 310. Additionally, for example, after mounting the electronic component CH on the substrate SB, the camera unit 400 acquires images of the mounted substrate SB and the electronic component CH, and corrects the landing position during the next bonding operation. By capturing clearer images, mounting accuracy is improved, and the frequency of defective products is suppressed. Thus, the reliability of the bonding is improved.

[0067] The antioxidant circuit 100 has electrodes 140 for plasmaizing the antioxidant gas, thereby heating the bonding components in an antioxidant plasma gas environment. For example... Figure 2 As shown, the antioxidant circuit 100 includes a furnace wall 110, a gas inlet 120, a mesh filter 130, an electrode 140, and an AC power supply 150.

[0068] The furnace wall 110 is an outer wall used to create an oxidation-resistant plasma gas environment for the space where the joint is performed, i.e., the inner side of the furnace wall 110 (hereinafter, sometimes referred to as the "furnace interior"). The furnace wall 110 is arranged in a cylindrical shape along the conveying mechanism 200. Figure 2 As shown, the furnace wall 110 has an inlet 111 and an outlet 112.

[0069] Inlet 111 and outlet 112 are a pair of open ends of the cylindrical furnace wall 110. Inlet 111 is the opening end on the negative X-axis side of the furnace wall 110, and outlet 112 is the opening end on the positive X-axis side of the furnace wall 110. The substrate SB, to which electronic components CH are bonded, enters the anti-oxidation path 100 through inlet 111. The substrate SB, to which electronic components CH are bonded, exits from the anti-oxidation path 100 through outlet 112.

[0070] Antioxidant gas is introduced into the furnace through gas inlet 120. Although the diagram is omitted, a flow meter or flow regulating valve may be installed at gas inlet 120.

[0071] like Figure 1 , Figure 2 As shown, the gas inlet 120 is connected, for example, to the wall on the negative Z-axis side of the furnace wall 110 (hereinafter referred to as the "top wall"). The gas inlet 120 is not limited to a component connected to the top wall. The gas inlet 120 may also be connected, for example, to the wall on the Y-axis side of the furnace wall 110 (hereinafter referred to as the "side wall"), or to the wall on the positive Z-axis side of the furnace wall 110 (hereinafter referred to as the "bottom wall"). Hereinafter, as an example, the case where the gas inlet 120 is connected to the top wall will be described.

[0072] The mesh filter 130 experiences pressure loss in the antioxidant gas introduced from the gas inlet 120 into the inner side of the furnace wall 110. For example... Figure 2 As shown, the area of ​​the mesh filter 130 is larger than the area of ​​the gas inlet 120. The mesh filter 130 is, for example, a metal mesh with an opening ratio of 25% or more and 40% or less, and an opening diameter (opening) of 0.020 mm or more and 0.200 mm or less.

[0073] Furthermore, the aperture ratio and aperture diameter of the mesh filter 130 are not limited to those described above, as long as the mesh filter 130 can generate pressure loss in the antioxidant gas. The material of the mesh filter 130 is preferably a metal with good heat resistance. Alternatively, the material of the mesh filter 130 may also be flame-retardant fiber or ceramic, provided it has sufficient heat resistance. The mesh filter 130 has a main surface extending along the XY plane and a through hole extending through the Z-axis direction.

[0074] like Figure 2As shown, for example, the gas inlet 120 is located in the center of the mesh filter 130 when viewed from above. The area of ​​the mesh filter 130 is larger than the area of ​​the gas inlet 120.

[0075] The antioxidant gas introduced into the furnace through the gas inlet 120 is suppressed from flowing towards the bottom wall (positive Z-axis direction) by the pressure loss of the mesh filter 130, while simultaneously diffusing in the XY plane. That is, the mesh filter 130 limits the flow rate of the antioxidant gas per unit area that causes turbulence and suppresses flow deviation.

[0076] Electrode 140 is used to ionize the antioxidant gas that has passed through mesh filter 130. Electrode 140 is formed of metal such as aluminum or stainless steel, and is generally made of a highly conductive material known as a conductor.

[0077] The main surface of electrode 140 is arranged parallel to and facing the main surface of mesh filter 130. Electrode 140 plasmaizes the antioxidant gas that has passed through mesh filter 130, so that the antioxidant plasma gas fills the space 101 in the antioxidant path 100 through which substrate SB passes.

[0078] Reference Figure 3 , Figure 4 , Figure 5 The structure of electrode 140 will be described. Figure 3 This is a cross-sectional view of an antioxidant path 100 according to an embodiment of the present invention. Figure 4 This is a three-dimensional view of electrode 140. Figure 5 This is a cross-sectional view of electrode 140.

[0079] like Figure 3 As shown, electrode 140 is positioned opposite to the gas inlet 120 in the mesh filter 130 (in Figure 3 The surfaces (with the positive Z-axis direction in the middle) face each other. As a result, the antioxidant gas experiences pressure loss through the mesh filter 130, thereby allowing the antioxidant gas to pass uniformly through the electrode 140.

[0080] Electrode 140 includes a first electrode 141 and a second electrode 142 disposed on the opposite side of the gas inlet 120 relative to the first electrode 141. For example... Figure 3 As shown, electrode 140 uses an insulator 144 to connect the peripheral portion of the first electrode 141 to the peripheral portion of the second electrode 142, thereby ensuring the spacing between the first electrode 141 and the second electrode 142, i.e., space 143.

[0081] Electrode 140 generates dielectric barrier discharge between the first electrode 141 and the second electrode 142. To generate dielectric barrier discharge, electrode 140 is configured such that the surface of the first electrode 141 and the surface of the second electrode 142, which faces the first electrode 141, are separated by a dielectric 145. That is, the dielectric 145 is provided on electrode 140 such that the metal portions of the first electrode 141 and the metal portions of the second electrode 142 do not directly face each other.

[0082] At least one of the surfaces of the first electrode 141 and the second electrode 142 of electrode 140 is coated with dielectric 145. Preferably, the surface of the second electrode 142 is coated with dielectric 145. This is because, considering the shape of the electrode, coating the surface of the second electrode 142 is easier to perform than coating the surface of the first electrode 141.

[0083] The dielectric 145 is, for example, an insulator such as alumina, glass, or polyimide. To generate dielectric barrier discharge, the thickness of the dielectric 145 is preferably 0.1 mm to 5 mm. Thus, no arc discharge or streamer discharge occurs between the first electrode 141 and the second electrode 142, but rather a dielectric barrier discharge is generated.

[0084] In addition, such as Figure 3 As shown, the first electrode 141 is preferably configured such that the distance L2 between it and the second electrode 142 is greater than the distance L1 between it and the mesh filter 130. This is to prevent discharge between the first electrode 141 and the mesh filter 130 when an AC voltage is applied.

[0085] The first electrode 141 is, for example, a flat plate, such as... Figure 4 As shown, the main surface has a through hole 141a and a protrusion 141b.

[0086] Hole 141a is a hole for the antioxidant gas that has passed through the mesh filter 130 to pass through to the second electrode 142. For example... Figure 4 As shown, multiple holes 141a are provided at equal intervals, for example, holes that penetrate the surface of the first electrode 141. The shape of the holes 141a is, for example, circular. In addition, the shape of the holes 141a is not particularly limited, and for example, it can also be polygonal.

[0087] The protrusion 141b is a protrusion extending toward the second electrode 142. For example... Figure 4 , Figure 5 As shown, the protrusion 141b is provided, for example, between two adjacent through holes 141a, and has an acute-angled front end. The protrusion 141b is formed, for example, by cutting the through holes 141a with a ball end mill on a flat plate having multiple through holes 141a.

[0088] The second electrode 142 is, for example, a flat plate, such as... Figure 4 As shown, the main surface has a through hole 142a. The second electrode 142 is configured such that its main surface is parallel to and faces the main surface of the first electrode 141.

[0089] Through hole 142a is a hole for allowing the antioxidant plasma gas, after being plasmaized in space 143, to pass through the space 101 inside the furnace where the substrate SB is disposed. For example... Figure 4 , Figure 5 As shown, multiple holes 142a are provided at equal intervals, for example, holes that penetrate the surface of the second electrode 142.

[0090] like Figure 5 As shown, the through hole 142a is configured to correspond to the protrusion 141b when the first electrode 141 and the second electrode 142 are joined by the insulator 144. Furthermore, the shape of the through hole 142a is preferably circular, for example, and the second electrode 142 may also be a perforated metal plate with equally spaced through holes 142a.

[0091] Thus, when the through hole 142a is circular, the distance between the front end of the protrusion 141b of the first electrode 141 and the edge of the through hole 142a can be made uniform, thereby suppressing the concentration of the anti-oxidation plasma gas. Furthermore, the shape of the through hole 142a is not particularly limited, and it can be polygonal for example.

[0092] An AC power supply 150 applies, for example, a low-frequency, high-voltage AC voltage between the first electrode 141 and the second electrode 142. An AC voltage is applied from the AC power supply 150 to at least one of the first electrode 141 and the second electrode 142. Preferably, the AC voltage is applied to the first electrode 141, and the second electrode 142 is grounded. This is because by applying an AC voltage to the first electrode 141, which is far from the substrate SB, discharge of the AC voltage into the copper contained in the substrate SB can be suppressed.

[0093] Specifically, the AC power supply 150 can also apply an AC voltage with a frequency of 20 kHz and a voltage of 10 kV. Thus, by applying a low-frequency, high-voltage AC voltage to the electrode 140, the bonding device 10 can increase the electric field strength at the tip of the protrusion 141b of the first electrode 141. Consequently, the bonding device 10 can appropriately generate dielectric barrier discharge, thereby appropriately plasmaizing the antioxidant gas.

[0094] Furthermore, when the antioxidant gas is nitrogen, nitrogen lacks an intermediate energy level, making plasma formation difficult. However, nitrogen migrates when a high voltage is applied, thus facilitating its plasma formation. Plasmatized nitrogen exhibits a reducing effect, allowing it to function as an antioxidant even if it does not contain hydrogen. Therefore, a reducing effect can be achieved using an inexpensive antioxidant gas.

[0095] <<The Generation Process of Antioxidant Plasma Gaseous Environment>>

[0096] Reference Figure 5 The generation process of the antioxidant plasma gas in electrode 140 is explained. Figure 5 In the diagram, dashed arrows represent the flow of antioxidant gas, while solid arrows represent the flow of antioxidant plasma gas.

[0097] The connecting device 10 introduces antioxidant gas into the furnace through the gas inlet 120. The introduced antioxidant gas touches the mesh filter 130, and in the space 102 between the mesh filter 130 and the top wall (see reference) Figure 3 It spreads in the middle.

[0098] The coupling device 10 applies an AC voltage from the AC power supply 150 to the first electrode 141. For example... Figure 5 As shown, a high electric field strength is generated between the front end of the protrusion 141b of the first electrode 141 and the edge of the through hole 142a of the second electrode 142. This results in a dielectric barrier discharge near the front end of the protrusion 141b. The region in space 143 where the dielectric barrier discharge is generated is referred to as the "plasma region".

[0099] Based on the increase in internal pressure caused by the antioxidant gas diffusing in space 102, the mesh filter 130 allows the antioxidant gas to pass through on the opposite side (positive Z-axis direction side) of the gas inlet 120.

[0100] The first electrode 141 passes through the through hole 141a to introduce antioxidant gas into the space 143 between the first electrode 141 and the second electrode 142.

[0101] The antioxidant gas introduced into space 143 moves from through hole 141a toward through hole 142a of the second electrode 142 in the plasma region.

[0102] At this time, in the plasma region, the antioxidant gas is plasmaized by the dielectric barrier discharge generated near the front end of the protrusion 141b of the first electrode 141, and becomes antioxidant plasma gas.

[0103] Antioxidant plasma gas fills the furnace space 101 through the through hole 142a of the second electrode 142. That is, the oxidizing gas in the antioxidation path 100 is replaced by the antioxidant plasma gas, and the antioxidation path 100 becomes an antioxidant plasma gas environment. At this time, the oxidizing gas in the antioxidation path 100 is released by being squeezed out from the inlet 111, the outlet 112 and the opening 113 through the antioxidant plasma gas.

[0104] Therefore, the bonding device 10 can improve the anti-oxidation and reduction effects during bonding, and achieve a highly reliable bonding.

[0105] <<Jointing Method>>

[0106] Reference Figure 6 , Figure 7 The bonding method in an anti-oxidation plasma gas environment is described. Figure 6 This is a flowchart of the operation of the coupling device. Figure 7 This is a diagram illustrating the situation during the joining process.

[0107] The connecting device 10 introduces the antioxidant gas into the furnace through the gas inlet 120 (S100).

[0108] The antioxidant gas experiences pressure loss as it passes through the mesh filter 130 and reaches the electrode 140 (S101).

[0109] Electrode 140 plasmaizes the antioxidant gas by blocking discharge through the dielectric in electrode 140, thereby setting the furnace to an antioxidant plasma gas environment (S102).

[0110] The bonding device 10 transports the substrate SB from the inlet 111 into the furnace containing the anti-oxidation plasma gas environment via the conveying mechanism 200 (S103). Inside the furnace, the substrate SB is heated by the heater 210 while being transported below the opening 113. The substrate SB is coated with external oxidizing gas upon entering the furnace, but this oxidizing gas is expelled by the anti-oxidation plasma gas released from the inlet 111.

[0111] The electronic component CH is picked up using the connector 310 and moved into the furnace through the opening 113 (S104). The connector 310 and the electronic component CH are covered with external oxidizing gas when they enter the furnace, but the oxidizing gas is removed by the anti-oxidation plasma gas released from the opening 113.

[0112] Next, in a furnace with an anti-oxidation plasma gas environment, electronic components CH are bonded to substrate SB (S105).

[0113] Electronic component CH is bonded to substrate SB supported by heater 210 via bonding head 310. Bonding member BM is heated by heater 210 and pressurized by bonding head 310. After bonding of one electronic component CH is completed, bonding head 310 releases electronic component CH, which exits through opening 113 and out of the furnace.

[0114] An external oxidizing gas is drawn into the space behind the joint 310, which exits through the opening 113 and out of the furnace. This oxidizing gas passes through the anti-oxidizing plasma gas released from the opening 113. Figure 7 The solid arrow indicates that the gas is expelled and is also expelled by the airflow formed by the gas outlet (not shown) at the inlet provided in the opening 113.

[0115] Next, the substrate SB with the electronic component CH attached is moved out of the furnace (S106).

[0116] The substrate SB is repeatedly bonded with electronic components CH using the bonding head 310. The substrate SB with a predetermined number of electronic components CH bonded is transported out of the furnace through the exit port 112 by the conveying mechanism 200. The substrate SB, which is retracting from above the heater 210, is deheated during the conveying process, and its temperature drops to a non-oxidizing temperature when it exits through the exit port 112.

[0117] An oxidizing gas is drawn into the space behind the substrate SB, which exits through the exit port 112 and is exiting the furnace. This oxidizing gas is then expelled by an anti-oxidation plasma gas emitted from the exit port 112.

[0118] <<Variations>>

[0119] In the description, the antioxidant path 100 is described as having a mesh filter 130, but it is not limited to this and may not have a mesh filter 130. That is, as long as the antioxidant gas flowing in through the electrode 140 can be sufficiently depressurized to suppress flow deviation, the mesh filter 130 may be omitted. In this way, even if the antioxidant path 100 does not have a mesh filter 130, the through holes 141a of the first electrode 141 and 142a of the second electrode 142 will still produce the effect of pressure loss in the antioxidant gas introduced from the gas inlet 120 into the inner side of the furnace wall 110.

[0120] In this description, the second electrode 142 is positioned on the opposite side (positive Z-axis direction side) of the gas inlet 120 relative to the first electrode 141, but this is not a limitation. The second electrode 142 may also be positioned on the same side of the gas inlet 120 as the first electrode 141. That is, there is no limitation on which of the first electrode 141 or the second electrode 142 is positioned on the negative Z-axis direction side.

[0121] In this description, the gas inlet 120 is connected to the top wall, but this is not a limitation. The gas inlet 120 may also be connected to a side wall or a bottom wall, for example. In this case, a mesh filter 130 and an electrode 140 are configured to generate pressure loss in the antioxidant gas introduced into the furnace from the gas inlet 120. Specifically, for example, when the gas inlet 120 is connected to a side wall (a wall facing each other in the Y direction), the mesh filter 130 and the electrode 140 are configured such that their main surfaces are aligned along the YZ plane.

[0122] <<Postscript>>

[0123] The following are some or all of the embodiments of the present invention. Furthermore, the present invention is not limited to the following descriptions.

[0124] [Postscript 1]

[0125] A coupling device, comprising:

[0126] The transport mechanism transports the substrate SB;

[0127] A bonding tool is used to bond electronic components to the substrate;

[0128] An antioxidant path has a wall extending along and surrounding the conveying mechanism.

[0129] The antioxidant pathway has the following characteristics:

[0130] The substrate is introduced through the inlet port.

[0131] The opening allows the joining tool to approach or separate from the substrate;

[0132] A gas inlet is used to introduce an antioxidant gas into the inner side of the wall; and

[0133] The electrode has a through hole on the inner side of the wall for the antioxidant gas to pass through, and the antioxidant gas passing through the through hole is plasma-generated in the plasma-generating region.

[0134] According to the embodiment described above, an antioxidant plasma gas with higher antioxidant and reduction effects than the antioxidant gas itself is generated and used. This suppresses bonding defects caused by oxidation of the substrate, thereby improving bonding reliability. Furthermore, by plasmaifying the antioxidant gas, the antioxidant and reduction effects are enhanced, thus reducing the hydrogen content of the antioxidant gas and consequently reducing operating costs.

[0135] [Postscript 2]

[0136] According to the coupling device described in [Appendix 1], wherein

[0137] The electrodes include a first electrode and a second electrode, the surfaces of which are coated with a dielectric material at least once.

[0138] The first electrode has a plurality of first through holes for the antioxidant gas to pass through, and a plurality of protrusions extending toward the second electrode.

[0139] second electrode

[0140] They are arranged parallel to and facing each other, opposite to the first electrode.

[0141] It also has a second through hole corresponding to the plurality of protrusions.

[0142] According to the embodiments described above, an antioxidant gas plasma can be generated using a simple structure. By generating and using an antioxidant plasma gas with higher antioxidant and reducing effects than the antioxidant gas itself, the generation of poor bonding caused by oxidation of the substrate or the like can be suppressed, thereby improving the reliability of the bonding.

[0143] [Postscript 3]

[0144] According to the coupling device described in [Appendix 2], wherein

[0145] The second through hole of the second electrode is arranged to overlap with the plurality of protrusions when viewed from above.

[0146] According to the embodiment, dielectric plasma discharge can be appropriately applied to the plasmaification region in the space 143 between the first electrode 141 and the second electrode 142, thus generating a suitable anti-oxidation plasma gas environment within the space 102. This suppresses oxidation of the substrate SB and inhibits the formation of poor bonding caused by oxidation.

[0147] [Postscript 4]

[0148] According to the coupling device described in [Appendix 2] or [Appendix 3], wherein

[0149] The first electrode is provided with a plurality of first through holes at equal intervals.

[0150] According to the embodiment, dielectric plasma discharge can be uniformly applied to the oxidizing gas in the space 143 between the first electrode 141 and the second electrode 142, thus generating a uniform anti-oxidation plasma gas environment within the space 102. This suppresses oxidation of the substrate SB and inhibits the formation of poor bonding caused by oxidation.

[0151] [Postscript 5]

[0152] The coupling device according to any one of [Appendix 2] to [Appendix 4], wherein

[0153] The second electrode is provided with a plurality of second through holes at equal intervals.

[0154] According to the embodiment, dielectric plasma discharge can be uniformly applied to the oxidizing gas in the space 143 between the first electrode 141 and the second electrode 142, thus generating a uniform anti-oxidation plasma environment within the space 102. This suppresses oxidation of the substrate SB and inhibits the formation of poor bonding caused by oxidation.

[0155] [Postscript 6]

[0156] The coupling device according to any one of [Appendix 2] to [Appendix 5], wherein

[0157] A voltage is applied to the electrode of the first electrode and the second electrode located near the gas inlet.

[0158] The electrode of the first electrode and the second electrode located at a distance from the gas inlet is electrically connected to ground.

[0159] According to the embodiment described, by moving the electrode to which the AC voltage is applied away from the substrate SB, dielectric discharge caused by dielectric barrier discharge on the substrate SB can be suppressed. This, in turn, suppresses the generation of poor bonding due to dielectric discharge.

[0160] [Postscript 7]

[0161] The coupling device according to any one of [Appendix 1] to [Appendix 6], wherein

[0162] At least one surface of the second electrode facing the first electrode is coated with the dielectric.

[0163] According to the described embodiment, the dielectric can be coated with a uniform thickness, thus enabling the appropriate generation of dielectric barrier discharge and antioxidant plasma gas. Therefore, oxidation can be further suppressed, thereby achieving further improvements in the reliability of the bonding.

[0164] [Postscript 8]

[0165] The coupling device according to any one of [Appendix 1] to [Appendix 7] further comprises a mesh filter.

[0166] The mesh filter is disposed on one side of the gas inlet of the electrode in the inner side of the wall, and generates pressure loss in the antioxidant gas introduced from the gas inlet into the inner side of the furnace wall.

[0167] According to the embodiment, an antioxidant gas that generates pressure loss through the mesh filter 130 is supplied toward the electrode 140. Therefore, the inflow velocity of the antioxidant gas is limited, turbulence generation and pressure drop within the furnace wall are suppressed, and entrainment of external gases is prevented. Furthermore, by diffusing and supplying the antioxidant gas toward the electrode 140, the deviation in the flow rate per unit area of ​​the antioxidant gas is reduced, thereby enabling the antioxidant gas to uniformly apply dielectric barrier discharge to the space 143 of the electrode 140. Therefore, the space 101 of the antioxidant path 100 can be uniformly filled with antioxidant plasma gas, thus suppressing the generation of poor bonding caused by oxidation of the substrate SB, thereby improving bonding reliability.

[0168] [Postscript 9]

[0169] The coupling device according to any one of [Appendix 2] to [Appendix 7] further includes a mesh filter.

[0170] The mesh filter is disposed on one side of the gas inlet of the electrode on the inner side of the wall, causing pressure loss in the antioxidant gas introduced into the inner side of the furnace wall from the gas inlet.

[0171] A voltage is applied to the first electrode.

[0172] The second electrode is electrically connected to ground.

[0173] The first electrode is configured such that the second distance between it and the mesh filter is greater than the first distance between it and the second electrode.

[0174] According to the embodiment, by applying an AC voltage to the first electrode 141, discharge between the first electrode 141 and the mesh filter 130 can be avoided, dielectric barrier discharge can be appropriately generated in the space 143, and antioxidant plasma gas can be appropriately generated. Therefore, oxidation can be further suppressed, thereby achieving further improvement in the reliability of the connection.

[0175] [Postscript 10]

[0176] The coupling device according to any one of [Appendix 1] to [Appendix 9], wherein

[0177] The gas inlet introduces the antioxidant gas containing hydrogen into the inside of the wall.

[0178] According to the embodiment described, an antioxidant plasma gas with high reduction effect is used to plasmaize the antioxidant gas, thereby further suppressing the generation of oxidation and thus achieving further improvement in the reliability of the bonding.

[0179] [Postscript 11]

[0180] The coupling device according to any one of [Appendix 1] to [Appendix 9], wherein

[0181] The bonding tool applies pressure to the substrate and heats the electronic components, thereby eutectic bonding the electronic components to the substrate.

[0182] According to the embodiment described above, when bonding is performed using a eutectic alloy, such as a substrate, which is prone to oxidation due to bonding at high temperatures, it is particularly important to reduce the concentration of oxidizing gas on the inner side of the wall. Therefore, this embodiment is more effective.

[0183] As explained above, a joining device that can improve the reliability of the joining can be provided.

[0184] The embodiments described above are for ease of understanding of the present invention and are not intended to limit the scope of the invention. The elements included in the embodiments, as well as their configurations, materials, conditions, shapes, and dimensions, are not limited to those illustrated and can be appropriately modified. Furthermore, the structures shown in different embodiments can be partially substituted for or combined with each other.

Claims

1. A coupling device, comprising: The transport mechanism transports the substrate; A bonding tool is used to bond electronic components to the substrate; An antioxidant path has a wall extending along and surrounding the conveying mechanism. The antioxidant pathway has the following characteristics: The substrate is introduced through the inlet port. The opening allows the joining tool to approach or separate from the substrate; An antioxidant gas is introduced into the inner side of the wall through a gas inlet. as well as The electrode has a through hole on the inner side of the wall for the antioxidant gas to pass through, and the antioxidant gas passing through the through hole is plasma-generated in the plasma-generating region.

2. The coupling device according to claim 1, wherein The electrodes include a first electrode and a second electrode, the surfaces of which are coated with a dielectric material at least once. The first electrode has a plurality of first through holes for the antioxidant gas to pass through, and a plurality of protrusions extending toward the second electrode. The second electrode is arranged parallel to and facing the first electrode. It also has a second through hole corresponding to the plurality of protrusions.

3. The joining device according to claim 2, wherein The second through hole of the second electrode is arranged to overlap with the plurality of protrusions when viewed from above.

4. The coupling device according to claim 2, wherein The first electrode is provided with a plurality of first through holes at equal intervals.

5. The joining device according to claim 2, wherein The second electrode is provided with a plurality of second through holes at equal intervals.

6. The coupling device according to claim 2, wherein A voltage is applied to the electrode of the first electrode and the second electrode located near the gas inlet. The electrode of the first electrode and the second electrode located at a distance from the gas inlet is electrically connected to ground.

7. The coupling device according to claim 2, wherein At least one surface of the second electrode facing the first electrode is coated with the dielectric.

8. The bonding device according to claim 1 further includes a mesh filter disposed on one side of the gas inlet of the electrode in the inner side of the wall portion, which generates pressure loss in the antioxidant gas introduced from the gas inlet into the inner side of the wall portion.

9. The bonding device according to claim 2, further comprising a mesh filter disposed on one side of the gas inlet of the electrode in the inner side of the wall portion, wherein a pressure loss is generated in the antioxidant gas introduced from the gas inlet into the inner side of the wall portion. A voltage is applied to the first electrode. The second electrode is electrically connected to ground. The first electrode is configured such that the second distance between it and the mesh filter is greater than the first distance between it and the second electrode.

10. The coupling device according to any one of claims 1 to 9, wherein The gas inlet introduces the antioxidant gas containing hydrogen into the inside of the wall.

11. The coupling device according to any one of claims 1 to 9, wherein The bonding tool applies pressure to the substrate and heats the electronic components, thereby eutectic bonding the electronic components to the substrate.

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