Preparation device and preparation system of semiconductor structure

Abstract

The invention provides a preparation device and a preparation system of a semiconductor structure, and relates to the technical field of semiconductor process equipment, the preparation device of the semiconductor structure comprises a main machine table, a first flow guide pipe, a second flow guide pipe, a third flow guide pipe, a detection structure and a control valve, and the main machine table is used for realizing preparation of the semiconductor structure and comprises a control assembly. The first flow guide pipe communicates with the main machine table and is used for conveying a gas-liquid mixture discharged by the main machine table. The second flow guide pipe and the third flow guide pipe are both communicated with the first flow guide pipe; under the action of gravity, gas in the gas-liquid mixture is discharged from the second flow guide pipe, and liquid is discharged from the third flow guide pipe. The detection structure is arranged on the second flow guide pipe and used for detecting the circulation state in the second flow guide pipe. And the control valve is arranged in the second flow guide pipe. The preparation device can still realize gas-liquid separation when the design space of the preparation device is limited and a finished gas-liquid separation device cannot be mounted, so that the risks of exhaust pipeline corrosion, gas-liquid backflow and environmental pollution are reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor process equipment, in particular to a preparation device and a preparation system of a semiconductor structure. BACKGROUND

[0002] In the process of semiconductor preparation, liquids such as cleaning liquid, polishing liquid and deionized water are often used, resulting in that micro liquid droplets are mixed in the exhaust gas generated by the equipment to form a gas-liquid mixture. However, due to the small difference between the equipment liquid discharge pipe and the plant liquid discharge tapping point, there is not enough installation space to install a finished product gas-liquid separation device, so that a large amount of gas-liquid mixture is directly discharged into the plant exhaust system, increasing the risk of exhaust pipe corrosion, gas-liquid backflow and environmental pollution. SUMMARY

[0003] The present application provides a preparation device and a preparation system of a semiconductor structure, which can still realize gas-liquid separation when the design space of the preparation device is limited and the finished product gas-liquid separation device cannot be installed, thereby reducing the risk of exhaust pipe corrosion, gas-liquid backflow and environmental pollution.

[0004] In a first aspect, a preparation device of a semiconductor structure is provided, which includes a main machine table, a first flow pipe, a second flow pipe, a third flow pipe, a detection structure and a control valve. The main machine table is used to realize the preparation of a semiconductor structure. The main machine table includes a control component. The first flow pipe is in communication with the main machine table and is used to transport the gas-liquid mixture discharged by the main machine table. The second flow pipe and the third flow pipe are both in communication with the first flow pipe. The gas in the gas-liquid mixture is discharged from the second flow pipe under the action of gravity, and the liquid is discharged from the third flow pipe. The detection structure is arranged on the second flow pipe and is used to detect the flow state in the second flow pipe. The detection structure is connected with the control component. The control valve is arranged in the second flow pipe. The control valve is connected with the control component. The control component is configured to control the opening degree of the control valve based on the flow state.

[0005] In the embodiments of the present application, by making the main machine table in communication with the first flow pipe, and making the first flow pipe in communication with the second flow pipe and the third flow pipe respectively, the preparation device can realize the gas-liquid separation of the gas-liquid mixture without connecting a finished product gas-liquid separation device, that is, the gas-liquid mixture can be separated under the action of gravity, thereby avoiding the problem that the gas-liquid mixture cannot be separated due to insufficient design space of the preparation device and the inability to install a finished product gas-liquid separation device, and further effectively reducing the risk of exhaust pipe corrosion, gas-liquid backflow and environmental pollution. In addition, during the gas-liquid separation process of the preparation device, the opening degree of the control valve can be dynamically adjusted according to the flow state in the second flow pipe detected by the detection structure, thereby improving the gas-liquid separation efficiency of the gas-liquid mixture.

[0006] In some embodiments, the device for preparing the semiconductor structure further comprises a separator provided with a separation cavity, and the first flow pipe, the second flow pipe and the third flow pipe are in communication with the separation cavity.

[0007] In some embodiments, the device for preparing the semiconductor structure further comprises a reducer, and the first flow pipe is connected to the separator through the reducer. The reducer has one end connected to the separator and the other end connected to the first flow pipe, and the diameter of the one end is greater than that of the other end. The second flow pipe and the third flow pipe have a diameter greater than that of the first flow pipe.

[0008] In some embodiments, the detection structure comprises a pressure detector configured to detect a pressure value in the second flow pipe.

[0009] The control component is configured to control the opening of the control valve to be larger when the pressure value detected by the pressure detector is greater than a first preset value.

[0010] In some embodiments, the control component is further configured to control the main machine to be closed when the pressure value detected by the pressure detector is greater than a second preset value, and the second preset value is greater than the first preset value.

[0011] In some embodiments, the detection structure comprises a sampling detector configured to detect at least a humidity in the second flow pipe.

[0012] The control component is configured to control the opening of the control valve to be smaller when the humidity detected by the sampling detector is greater than a third preset value.

[0013] In some embodiments, the main machine further comprises a sensor configured to detect a humidity of a gas-liquid mixture in the main machine.

[0014] The control component is further configured to control the opening of the control valve to be smaller when a ratio between the humidity detected by the sampling detector and the humidity of the gas-liquid mixture is greater than a fourth preset value.

[0015] In some embodiments, the control component is further configured to control the main machine to issue an alarm when the flow state is an abnormal state. The abnormal state is that the pressure value detected by the pressure detector is greater than the second preset value, or the humidity detected by the sampling detector is greater than the third preset value and the opening of the control valve is at a target opening.

[0016] In some embodiments, the third flow pipe extends in a zigzag shape.

[0017] In some embodiments, the second flow pipe comprises a first sub-portion and a second sub-portion. The first sub-portion extends in a straight line, and one end of the first sub-portion is connected to the first flow pipe and the other end is connected to the second sub-portion. The second sub-portion is bent towards the first flow pipe.

[0018] In a second aspect, a semiconductor structure preparation system is provided, which comprises the semiconductor structure preparation device in the above embodiments, and an exhaust system and a liquid discharge system. The exhaust system is in communication with the second flow guide pipe in the semiconductor structure preparation device. The liquid discharge system is in communication with the third flow guide pipe in the semiconductor structure preparation device.

[0019] The technical effects of the semiconductor structure preparation system described above can refer to the technical effects of the semiconductor structure preparation device in the first aspect, which will not be described here again. BRIEF DESCRIPTION OF DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the present application, the drawings needed to be used in some embodiments of the present application will be briefly introduced as follows. Obviously, the drawings described below are only some of the drawings of the present application, and other drawings can also be obtained by those skilled in the art according to these drawings. In addition, the drawings described below can be regarded as schematic diagrams, and not the actual size of the product involved in the embodiments of the present application, and the actual flow of the method.

[0021] Figure 1 A structural schematic diagram of a semiconductor structure preparation device provided by the present application is shown in the figure;

[0022] Figure 2 A structural schematic diagram of another semiconductor structure preparation device provided by the present application is shown in the figure;

[0023] Figure 3 A schematic diagram of a semiconductor structure preparation system provided by the embodiments of the present application is shown in the figure. DETAILED DESCRIPTION

[0024] The technical solutions in some embodiments of the present application will be described clearly and completely below with reference to the drawings. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments provided by the present application, all other embodiments obtained by those skilled in the art belong to the scope of protection of the present application.

[0025] Unless otherwise required by the context, throughout the specification and claims, the term "comprising" is interpreted to be open, inclusive, meaning "including, but not limited to".

[0026] Hereinafter, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first" and "second" can explicitly or implicitly include one or more features. In the description of the embodiments of the present application, unless otherwise stated, the meaning of "multiple" is two or more.

[0027] In describing some embodiments, the use of "connection" and / or "connected" can be used. The term "connection" is to be construed broadly, for example, "connection" can be a fixed connection, or a detachable connection, or integral; can be directly connected, or indirectly connected through an intermediate medium. For example, in describing some embodiments, the term "connection" can be used to indicate that two or more components have direct physical contact or electrical contact with each other.

[0028] In addition, the use of "based on" means openness and inclusiveness, because the process, step, calculation or other action based on one or more conditions or values described can be based on additional conditions or values beyond those described in practice.

[0029] At present, in the semiconductor preparation process, cleaning liquid, polishing liquid and deionized water and other liquids are usually used to meet the key process requirements such as wafer surface contaminant removal, material planarization and process cavity cleaning. The volatilization, splashing and pipeline conveying process of these liquids will cause the waste gas generated by the equipment to mix with small droplets, forming a gas-liquid mixture.

[0030] Because the vertical drop between the drain pipe of the existing preparation equipment and the plant drain tapping point is insufficient, it lacks the space required to install the finished gas-liquid separation device. This makes a large amount of gas-liquid mixture directly discharged into the plant exhaust system without effective separation, thereby causing various risks, for example, the long-term accumulation of condensate in the exhaust pipe network for a long time, causing the inner wall of the pipeline to be corroded, shortening the service life of the exhaust official website; the separated material backflows to the semiconductor preparation equipment, affecting the normal operation of the equipment; the gas-liquid mixture without effective gas-liquid separation tests the pollution treatment capacity of the end of the plant exhaust system, which may cause environmental pollution.

[0031] To solve the above problems, the embodiment of the present application provides a preparation device for semiconductor structure, Figure 1 The structure of the preparation device for semiconductor structure provided by the embodiment of the present application is shown in the figure.

[0032] As Figure 1 shown, the preparation device for semiconductor structure 100 includes a main machine table 1, a first flow guide pipe 2, a second flow guide pipe 3, a third flow guide pipe 4, a detection structure 5 and a control valve 6.

[0033] Among them, the main machine table 1 can be a semiconductor preparation equipment, used to realize the preparation of semiconductor structure, for example, cleaning machine, grinding machine, etching machine, etc.

[0034] As Figure 1 shown, the above-mentioned main machine table 1 can include a control component 11.

[0035] Exemplarily, the control component 11 can be a central control system of the main machine 1, which can include multiple components each having different functions, such as a logic control component, a communication component, a safety control component, etc., wherein the logic control component can execute the logic flow of the device, i.e., can control the opening degree of the control valve 6, the communication component can realize the data interaction of the main machine 1 with the detection structure 5 and the control valve 6, and the safety control component can control the main machine 1 to be closed and issue an alarm in the case of abnormality of key parameters such as humidity and pressure.

[0036] As shown in Figure 1 , the first flow guide pipe 2 is in communication with the main machine 1, and is used for conveying the gas-liquid mixture discharged from the main machine 1, i.e., the gas-liquid mixture discharged from the main machine 1 can enter the first flow guide pipe 2 through the discharge port i, and then the first flow guide pipe 2 conveys the gas-liquid mixture.

[0037] The gas-liquid mixture can include acidic gas, basic gas, organic waste gas, cleaning liquid, polishing liquid, deionized water, etc., such as hydrogen chloride (HCl), ammonia (NH3), acetone, hydrogen peroxide and sulfuric acid mixture, organic acid salt, etc.

[0038] The second flow guide pipe 3 and the third flow guide pipe 4 can both be in communication with the first flow guide pipe 2.

[0039] As shown in Figure 1 , the second flow guide pipe 3 is located above the third flow guide pipe 4, i.e., the third flow guide pipe 4 is located at a lower position, such as near the ground, so that the separated products of the gas-liquid mixture can be discharged in a directional manner.

[0040] The above-mentioned second flow guide pipe 3 is used for conveying and discharging gas, and the third flow guide pipe 4 is used for conveying and discharging liquid.

[0041] The gas-liquid mixture can be subjected to gas-liquid separation under the action of gravity, i.e., the gas and the liquid in the gas-liquid mixture can be naturally separated under the action of gravity due to the difference in density, to obtain separated products, i.e., gas and liquid.

[0042] The gas can be discharged through the second flow guide pipe 3, and the liquid can be discharged through the third flow guide pipe 4.

[0043] Exemplarily, the second flow guide pipe 3 and the third flow guide pipe 4 can be in communication with an exhaust system and a liquid discharge system, respectively, i.e., the first end of the second flow guide pipe 3 is connected with the exhaust system, and the end of the third flow guide pipe 4 is connected with the liquid discharge system, so as to perform subsequent treatment on the separated gas and liquid, for example, Figure 1 , the end of the second flow guide pipe 3 away from the ground is connected with the exhaust system, and the end of the third flow guide pipe 4 close to the ground is connected with the liquid discharge system.

[0044] AsFigure 1 As shown, the detection structure 5 can be disposed on the second guide tube 3 to detect the flow state in the second guide tube 3. For example, an opening is made in the second guide tube 3, and the detection structure 5 is installed at the opening location.

[0045] The flow state can be the pressure of the second guide tube 3, for example, the pressure difference between the inside and outside of the second guide tube 3, that is, the pressure difference between the inside of the second guide tube 3 and the outside atmospheric pressure.

[0046] The pressure in the second guide tube 3 will affect the flow rate and direction of the fluid in the second guide tube 3. For example, when the pressure difference between the inside and outside of the second guide tube 3 increases, that is, when the external pressure is much greater than the internal pressure, the gas will accelerate to flow to the outside.

[0047] For example, when the flow state of the second guide tube 3 is pressure, the above-mentioned detection structure 5 can be a digital differential pressure gauge. The digital differential pressure gauge can include a pressure sensor, a signal processing unit and a display unit. It can detect the pressure in the second guide tube 3 and display the pressure detection value at the same time, so that the operator can understand the flow state of the second guide tube 3 in real time.

[0048] The digital differential pressure gauge here may include two pressure sensors, which can be set inside and outside the second guide tube 3 respectively, to detect the pressure inside and outside the second guide tube 3 and obtain the pressure difference of the second guide tube 3.

[0049] For example, the above-mentioned flow state can be the humidity of the fluid in the second guide tube 3, that is, the humidity of the gas. The flow rate of the fluid can be adjusted according to the humidity of the fluid. For example, when the humidity of the gas is high, it indicates that the gas-liquid separation of the gas-liquid mixture is not sufficient. The flow rate of the gas in the second guide tube 3 can be reduced so that the gas-liquid separation of the gas-liquid mixture is more sufficient under the action of gravity.

[0050] Alternatively, by way of example, the flow state can be the particulate matter concentration of the fluid in the second guide tube 3, that is, the concentration of particulate matter contained in the gas. Those skilled in the art can determine the corresponding flow state according to actual needs, and this application does not limit it.

[0051] The aforementioned detection structure 5 can be connected to the control component 11.

[0052] For example, the detection structure 5 can be wired or wirelessly connected to the control component 11 to enable bidirectional data transmission, for example, using shielded twisted pair cable for wired connection.

[0053] like Figure 1 As shown, the control valve 6 can be installed inside the second guide pipe 3.

[0054] Exemplarily, the control valve 6 can be an electrically operated air valve, and the opening degree of the air valve can be adjusted to achieve the adjustment of the air volume and flow rate in the second flow guide pipe 3, for example, in the range of 0-100%, and the opening degree of the air valve is adjusted with an accuracy of 0.1%.

[0055] The control valve 6 can be connected to the control assembly 11.

[0056] Exemplarily, the control valve 6 can be connected to the control assembly 11 in a wired or wireless manner, so that the control assembly 11 controls the opening degree of the control valve 6.

[0057] The opening degree refers to the relative opening degree between the valve core and the valve seat inside the control valve 6, which can reflect the flow area size allowed by the control valve 6 to pass through the fluid, so as to adjust the flow rate, flow volume, and pressure of the fluid, and the pressure of the flow guide pipe.

[0058] Exemplarily, the control assembly 11 in the above embodiment can be used to control the opening degree of the control valve 6 according to the flow state in the second flow guide pipe 3 detected by the detection structure 5, so as to adjust the flow rate and pressure of the gas in the second flow guide pipe 3. For example, when the detection structure 5 detects that the pressure in the second flow guide pipe 3 is too large, the control assembly 11 can control the opening degree of the electrically operated air valve to be larger, so as to adjust the pressure in the second flow guide pipe 3.

[0059] Exemplarily, when the opening degree of the control valve 5 is adjusted by the control assembly 11, the response time of the control valve 5 can be less than or equal to 1 second.

[0060] In the embodiment of the present application, by connecting the host table 1 to the first flow guide pipe 2, and connecting the first flow guide pipe 2 to the second flow guide pipe 3 and the third flow guide pipe 4 respectively, the preparation device 100 can realize the gas-liquid separation of the gas-liquid mixture without connecting a finished product gas-liquid separation device, that is, the gas-liquid mixture can be separated under the action of gravity, so as to avoid the problem that the gas-liquid mixture cannot be separated due to the insufficient design space of the preparation device 100, which cannot install the finished product gas-liquid separation device, thereby effectively reducing the risk of corrosion of the exhaust duct, gas-liquid backflow, and environmental pollution. In addition, during the gas-liquid separation process of the preparation device 100, the opening degree of the control valve 6 can be dynamically adjusted according to the flow state in the second flow guide pipe detected by the detection structure 5, so as to improve the gas-liquid separation efficiency of the gas-liquid mixture.

[0061] In some embodiments, as shown in Figure 2 The preparation device 100 of the above semiconductor structure can further include a separator 7.

[0062] The separator 7 is provided with a separation cavity, so that the gas-liquid mixture entering the separator 7 can be naturally separated into gas and liquid under the action of gravity, and the gas-liquid separation is completed.

[0063] As shown in Figure 2 the separator 7 can be in communication with the first flow guide pipe 2, the second flow guide pipe 3 and the third flow guide pipe 4, at this time, the gas-liquid mixture can enter the separation cavity through the first flow guide pipe 2, and the gas-liquid separation can be completed under the action of gravity, and the separated gas and liquid can be discharged through the second flow guide pipe 3 and the third flow guide pipe 4, respectively.

[0064] Exemplarily, the separator 7 can be a tee pipe including three ports, for example, an inclined tee pipe, a T-shaped tee pipe, a Y-shaped tee pipe, etc.

[0065] Alternatively, the separator 7 can also be other structures which can provide a separation space for the gas-liquid mixture to realize gas-liquid separation under the action of gravity, which is not limited in the present application.

[0066] In some embodiments, as shown in Figure 2 the preparation device 100 of the semiconductor structure can further include a reducing pipe 8.

[0067] The reducing pipe 8 refers to a pipe with different diameters at two ends, which is used to connect two pipes with different diameters, for example, the diameters of the two ends of the reducing pipe 8 can be 1-1 / 5 inch (1.5 inch) and 2-1 / 5 inch (2.5 inch), respectively, that is, the reducing pipe 8 can connect two pipes with pipe diameters of 1.5 inch and 2.5 inch.

[0068] As shown in Figure 2 the first flow guide pipe 2 and the separator 7 can be connected through the reducing pipe 8, that is, one end of the reducing pipe 8 is connected with the first flow guide pipe 2, and the other end is connected with the separator 7.

[0069] Among them, the diameter of the end of the reducing pipe 8 connected with the separator 7 is greater than the diameter of the end of the reducing pipe 8 connected with the first flow guide pipe 2, so as to increase the space for the gas-liquid mixture to separate, so that the gas-liquid mixture can be fully separated under the action of gravity, for example, the diameter of the first flow guide pipe is 1.5 inch, and the diameter of the end of the reducing pipe 8 connected with the separator 7 is 2.5 inch.

[0070] The diameters of the second flow guide pipe 3 and the third flow guide pipe 4 in the above embodiments can also be greater than the diameter of the first flow guide pipe 2, so as to control the flow rate of the fluid in each flow guide pipe, thereby avoiding that the flow rate of the fluid is too fast, resulting in insufficient separation of the gas-liquid mixture, or the flow rate is too slow, causing blockage.

[0071] For example, the diameter of the first flow guide pipe 2 is 1.5 inch, and the diameters of the second flow guide pipe 3 and the third flow guide pipe 4 are both 2.5 inch.

[0072] In some embodiments, the detection structure 5 can include a pressure detector.

[0073] The pressure detector herein can be a pressure sensor for detecting the pressure value in the second flow guide tube 3 in real time.

[0074] Exemplarily, the detection structure 5 can include two pressure detectors, i.e. two pressure sensors, for detecting the pressure at different positions of the second flow guide tube 3 to obtain the pressure difference between the two positions.

[0075] The two pressure sensors herein can be respectively arranged inside and outside the second flow guide tube 3 to detect the pressure inside and outside the second flow guide tube 3, so as to obtain the pressure difference between the inside and outside of the second flow guide tube 3.

[0076] Exemplarily, the pressure value in the second flow guide tube 3 detected by the pressure detector can be transmitted to the control assembly 11 of the main machine table 1, so that the control assembly 11 completes the subsequent operation according to the value.

[0077] The control assembly 11 in the above embodiment can be a logic control assembly, which can be used to automatically control the opening degree of the control valve 6 according to the pressure value detected by the pressure detector and a first preset value, so as to adjust the pressure difference in the second flow guide tube 3, thereby ensuring the pressure balance in the second flow guide tube 3.

[0078] The first preset value can be a pressure difference range value of the second flow guide tube 3, which can be used to measure whether the pressure in the second flow guide tube 3 is balanced, i.e. whether the pressure difference in the second flow guide tube 3 is within a normal range, for example, the first preset value can be 0pa-50pa.

[0079] Exemplarily, when the pressure value detected by the pressure detector, i.e. the pressure difference value of the second flow guide tube 3, is greater than the upper limit value of the first preset value, it indicates that the pressure difference in the second flow guide tube 3 is too large, and the pressure is unbalanced, at this time, the control assembly 11 of the main machine table 1 can automatically control the opening degree of the control valve 6 to be larger, so as to increase the flow rate of the fluid in the second flow guide tube 3 and reduce the pressure difference of the second flow guide tube 3, thereby ensuring the pressure balance in the second flow guide tube 3.

[0080] For example, when the main machine table 1 receives the pressure difference value in the second flow guide tube 3 detected by the pressure detector, it compares the value with the first preset value, and when the above-mentioned pressure difference value is greater than 50pa, it indicates that the pressure difference in the second flow guide tube 3 is too large at this time, and the pressure is unbalanced, then the logic control assembly will issue a control signal to drive the controller of the control valve 6 to increase the opening degree of the control valve 6, thereby reducing the pressure difference in the second flow guide tube 3 and ensuring that the pressure difference in the second flow guide tube 3 is within a normal range, i.e. within the first preset value.

[0081] Exemplarily, when the pressure value detected by the pressure detector, i.e. the pressure difference value of the second flow guide pipe 3, is less than the lower limit value of the first preset value, it indicates that the pressure difference in the second flow guide pipe 3 is too small, and the pressure is unbalanced. At this time, the control assembly 11 of the main machine table 1 can automatically control the opening of the control valve 6 to be smaller, so as to reduce the flow rate of the fluid in the second flow guide pipe 3 and increase the pressure difference of the second flow guide pipe 3, thereby ensuring the pressure balance in the second flow guide pipe 3.

[0082] For example, when the main machine table 1 receives the pressure difference value detected by the pressure detector in the second flow guide pipe 3, it compares it with the first preset value. When the above-mentioned pressure difference value is less than 0 pa, it indicates that the pressure difference in the second flow guide pipe 3 is too small at this time, and the pressure is unbalanced. Subsequently, the logic control assembly will issue a control signal to drive the controller of the control valve 6 to reduce the opening of the control valve 6, thereby increasing the pressure difference in the second flow guide pipe 3 and ensuring that the pressure difference in the second flow guide pipe 3 is within the normal range, i.e. within the first preset value.

[0083] In this way, according to the pressure value of the second flow guide pipe 3 detected by the detection structure 5 in real time, the opening of the control valve 6 is adaptively controlled, which can not only ensure the pressure balance in the second flow guide pipe 3 and effectively separate the gas-liquid mixture, but also reduce manual intervention and improve the efficiency of gas-liquid separation of the gas-liquid mixture.

[0084] In some embodiments, the control assembly 11 can also control the main machine table 1 to be closed based on the pressure value detected by the pressure detector being greater than a second preset value.

[0085] The control assembly 11 can be a safety control assembly for controlling the main machine table 1 to be closed.

[0086] The second preset value can be a pressure difference range value of the second flow guide pipe 3, which can be used to measure whether the pressure difference in the second flow guide pipe 3 is within a safe range. For example, the second preset value is 50 pa-200 pa.

[0087] The second preset value can be greater than the first preset value, i.e. the lower limit value of the pressure difference range represented by the second preset value is greater than or equal to the upper limit value of the pressure difference range represented by the first preset value.

[0088] Exemplarily, when the pressure value detected by the pressure detector, i.e. the pressure difference value of the second flow guide pipe 3, is greater than the upper limit value of the second preset value, it indicates that the pressure difference in the second flow guide pipe 3 is abnormal. Subsequently, the control assembly 11 of the main machine table 1 automatically closes the main machine table 1 to prevent the semiconductor structure preparation device 100 from being damaged.

[0089] For example, when the host station 1 receives the pressure difference detected by the pressure detector in the second flow guide pipe 3, it compares it with the second preset value. When the pressure difference is greater than 200 pa, it indicates that the pressure difference in the second flow guide pipe 3 is abnormal at this time, and it is not within the safe range. Subsequently, the safety control component will send a control signal to close the host station 1, so as to avoid damage to the semiconductor structure preparation device 100.

[0090] In this way, according to the pressure value detected by the pressure detector and the second preset value, the running state of the semiconductor structure preparation device 100 is automatically controlled, which can effectively reduce the risk of damage to the preparation device while ensuring the gas-liquid separation efficiency of the gas-liquid mixture.

[0091] In some embodiments, the detection structure 5 can include a sampling detector 51.

[0092] The sampling detector can be used to detect the humidity in the second flow guide pipe 3, for example, the humidity of the gas in the second flow guide pipe 3, which can be the ratio of the actual water vapor content in the air to the saturated water vapor content at the same temperature, expressed in percentage.

[0093] For example, as shown in Figure 2 The sampling detector 51 can be a sampling tube for guiding the sample to the host station 1 for analysis to obtain the humidity or particulate matter concentration of the sample. For example, the sample is transmitted to the sensor in the control component 11 of the host station 1 or the detection and analysis unit, i.e. the online detector, for analysis to obtain the humidity or particulate matter concentration of the sample.

[0094] The sample here can be the gas in the second flow guide pipe 3.

[0095] For example, when the sampling detector 51 is a sampling tube, it can be composed of corrosion-resistant materials to avoid sample corrosion of the sampling tube and increase equipment costs, such as polytetrafluoroethylene (PTEF).

[0096] For example, when the sampling tube is set, a certain slope can be reserved to ensure that the sample can be smoothly transmitted to the host station 1, for example, the slope can be greater than or equal to 2°.

[0097] For example, the sampling detector 51 can periodically take samples and transmit them to the host station 1 for analysis. In this way, the effect of the gas-liquid separation of the gas-liquid mixture can be monitored, and the opening of the control valve 6 can be adjusted accordingly, for example, the sampling detector 51 takes a sample every hour and guides each sample to the host station 1 for analysis to obtain the humidity of the gas. Subsequently, the opening of the control valve 6 is adjusted according to the humidity.

[0098] Exemplarily, the sampling detector 51 can also be a sensor, which can be arranged at the end of the second flow guide pipe 3, such as a humidity sensor, a particulate matter detection sensor, etc.

[0099] The sampling detector 51 can be electrically connected with the control assembly 11 to transmit data.

[0100] Exemplarily, when the sampling detector 51 is a sensor, it can periodically take samples and analyze the samples, and then send the analysis results of the samples to the control assembly 11. For example, the sensor takes a sample every hour and analyzes the sample to obtain the humidity or the concentration of particulate matter of the sample, and then sends the humidity or the concentration of particulate matter to the control assembly 11 so that the control assembly 11 forms a control signal accordingly.

[0101] The control assembly 11 can be a logic control assembly for controlling the opening degree of the control valve 6 according to the humidity of the sample detected by the sampling detector 11 and a third preset value.

[0102] The third preset value can be a humidity value for measuring whether the humidity of the sample is qualified, i.e., whether the effect of the gas-liquid separation of the gas-liquid mixture meets the requirements. For example, the third preset value can be 40%.

[0103] Exemplarily, when the sampling detector 51 detects that the humidity of the sample is greater than the third preset value, it indicates that the gas-liquid mixture is not sufficiently separated, and the effect of the gas-liquid separation is poor. At this time, the control assembly 11 can control the opening degree of the control valve 6 to be smaller to reduce the flow rate of the gas, thereby prolonging the residence time of the gas-liquid mixture in the separation chamber, so that the gas-liquid mixture has sufficient time to separate, thereby improving the effect of the gas-liquid separation of the gas-liquid mixture.

[0104] In this way, by feeding back the humidity detected by the sampling detector to the control assembly 11, the control assembly 11 automatically adjusts the opening degree of the control valve 6 according to the humidity to optimize the effect of the gas-liquid separation, which can ensure the effect of the gas-liquid separation of the gas-liquid mixture while improving the efficiency of the gas-liquid separation of the gas-liquid mixture.

[0105] Exemplarily, the sampling detector can also be used to detect the concentration of particulate matter in the second flow guide pipe 3, such as the concentration of carbon particles, salt crystals, etc. carried by the gas in the second flow guide pipe 3.

[0106] The control assembly 11 can also adjust the opening degree of the control valve 5 according to the concentration of particulate matter of the sample and a third preset value. The specific process can be referred to the above embodiment, which will not be described here.

[0107] At this time, the third preset value can be a particulate matter concentration value.

[0108] In this way, by adjusting the opening of control valve 6, the flow direction of the fluid in the conductor tube can be changed, preventing particulate matter from accumulating in specific parts and causing blockage of the guide tube, thereby ensuring the gas-liquid separation effect; on the other hand, the emission concentration of particulate matter can be reduced, thus mitigating environmental pollution.

[0109] For example, the control component 11 may also be a safety control component, used to control the operating status of the host unit 1, and to control the host unit 1 to issue an alarm based on the data detected by the sampling detector 51, so as to prompt the staff to check the device, or to activate the automatic check function of the device to perform self-check.

[0110] For example, the operator or the semiconductor fabrication apparatus 100 can check whether the opening of the control valve 6 is normal, whether the air volume and flow rate of the exhaust system are stable, whether the internal structure of the apparatus is damaged, and whether there is excessive liquid accumulation in the apparatus. If any abnormality is found during the inspection, the operator can manually perform adjustments, maintenance, cleaning, or the apparatus can automatically perform adjustments and maintenance based on the inspection results. For example, the operator can manually adjust the opening of the control valve 6 to restore it to normal.

[0111] For example, the alarm control unit 1 may be activated by displaying it on the display component of the unit 1, making a voice announcement, generating vibration, etc.

[0112] For example, if the humidity in the second guide tube 3 detected by the sampling detector 51 is greater than the third preset value, it indicates that there is a problem with the gas-liquid separation of the gas-liquid mixture. At this time, the control component 11 will control the main unit 1 to issue an alarm and prompt the staff to check the control valve 6, exhaust system, etc. of the equipment in the form of voice broadcast. Then, based on the inspection results, subsequent adjustment, maintenance and cleaning operations will be performed. Alternatively, the automatic inspection function of the device will be automatically activated to automatically check the control valve 6, exhaust system, etc., and automatically perform adjustment, maintenance and cleaning operations based on the inspection results.

[0113] In some embodiments, the host unit 1 in the above embodiments may further include a sensor 12.

[0114] Among them, such as Figure 2 As shown, sensor 12 can be used to detect the humidity of the gas-liquid mixture in the main unit 1, that is, the humidity of the gas-liquid mixture discharged through the outlet i of the main unit 1.

[0115] For example, the sensor 12 described above can also be used by the control component 11, that is, it can be a sensor of the control component 11 to analyze the samples, and this application does not limit this.

[0116] The control assembly 11 in the above embodiments can also be used to control the opening degree of the control valve 6 according to the humidity detected by the sampling detector 51 and the humidity of the gas-liquid mixture detected by the sensor 12.

[0117] For example, when the ratio between the humidity detected by the sampling detector and the humidity of the gas-liquid mixture is greater than the fourth preset value, it indicates that the gas-liquid separation of the gas-liquid mixture is abnormal. At this time, the control assembly 11 can try to control the opening degree of the control valve 6 to be smaller, thereby prolonging the time for the gas-liquid mixture to stay in the separation chamber, so that the gas-liquid mixture has time to separate. If the ratio between the humidity detected by the sampling detector and the humidity of the gas-liquid mixture is still greater than the fourth preset value next time, the control assembly 11 will shut down the main machine 1 and issue an alarm to prompt the staff to check, or start the automatic checking function of the device to check itself.

[0118] In this way, it can effectively avoid the situation that the main machine 1 is shut down due to the abnormal detection of the sampling detector once, thereby ensuring the gas-liquid separation efficiency of the gas-liquid mixture of the semiconductor structure preparation device.

[0119] In some embodiments, the control assembly 11 described above can be a safety control assembly.

[0120] The safety control assembly can be used to control the main machine 1 to issue an alarm to prompt the staff or start the automatic checking function of the device when the flow state of the second flow guide pipe 3 is in an abnormal state.

[0121] The above abnormal state can include one of the following situations:

[0122] (1) The pressure value detected by the pressure detector is greater than the second preset value.

[0123] That is, when the pressure value detected by the pressure detector, i.e. the pressure difference value of the second flow guide pipe 3, is greater than the upper limit value of the second preset value, it indicates that the pressure difference in the second flow guide pipe 3 is abnormal. Subsequently, the control assembly 11 of the main machine 1 automatically shuts down the main machine 1 and issues an alarm.

[0124] (2) The humidity detected by the sampling detector is greater than the third preset value, and the opening degree of the control valve is at the target opening degree.

[0125] That is, when the opening degree of the control valve 6 is normal, the humidity of the sample detected by the sampling detector 51 is still greater than the third preset value, indicating that the gas-liquid separation is abnormal. At this time, the control assembly 11 can control the main machine 1 to issue an alarm.

[0126] For example, the alarm issuing mode of the main machine 1 can include displaying on the display assembly of the main machine 1, voice broadcasting, vibration, etc.

[0127] Exemplarily, after receiving the alarm, the staff can check whether the opening degree of the control valve 6 of the device is normal, whether the air volume and flow rate of the exhaust system are stable, whether the internal structure of the device is damaged, and whether the device has excessive liquid, and the like. If the check is abnormal, the staff can manually adjust, maintain, clean, and the like.

[0128] Alternatively, exemplarily, after the device 100 for preparing semiconductor structure sends an alarm, the automatic checking function is started to check, and then, according to the checking result, the adjustment, maintenance, cleaning, and the like are automatically performed, which is not limited in the present application.

[0129] In this way, according to the abnormal flow state of the second flow guide pipe 3, the host machine 1 sends an alarm immediately, which can timely inform the staff to process, thereby effectively reducing the risk of damage to the device.

[0130] In some embodiments, as shown in Figure 1 and Figure 2 , the third flow guide pipe 4 can extend in a zigzag shape.

[0131] Among them, the third flow guide pipe 4 can be a curved elbow pipe, which can change the flow direction and path of the fluid, form a barrier to prevent backflow, thereby avoiding the backflow of the gas separated from the gas-liquid mixture or the liquid that has been discharged, and ensuring the normal operation of the device.

[0132] In some embodiments, as shown in Figure 2 , the second flow guide pipe 3 in the above embodiment can include a first sub-portion 31 and a second sub-portion 32.

[0133] Among them, the first sub-portion 31 can extend in a straight line, that is, this part of the second flow guide pipe 3 can be a straight pipe, so that the gas separated from the gas-liquid mixture can be smoothly discharged.

[0134] As shown in Figure 2 , one end of the above-mentioned first sub-portion 31 can be connected with the first flow guide pipe 2, and the other end is connected with the second sub-portion 32, for example, Figure 2 , the end of the first sub-portion 31 close to the ground, that is, the end of the second flow guide pipe 3, is connected with the first flow guide pipe 2, and the end away from the ground is connected with the second sub-portion 32.

[0135] Exemplarily, the end of the first sub-portion 31 close to the ground can be connected with the separator 7, that is, connected with one port of the separator 7, so that the gas separated from the gas-liquid mixture can be transmitted to the first sub-portion 31.

[0136] As shown in Figure 2As shown, the second sub-portion 32 can be bent towards the first flow guide pipe 2, that is, one end of the second sub-portion 32 not connected with the first sub-portion 31 can be inclined towards the ground, so that the second sub-portion 32 has a slope with the ground, thereby facilitating the gas in the second flow guide pipe 3 to smoothly enter the exhaust system.

[0137] The embodiment of the present application further provides a preparation system of a semiconductor structure, Figure 3 A schematic diagram of a preparation system of a semiconductor structure provided by the embodiment of the present application.

[0138] As shown in the figure, Figure 3 The preparation system of the semiconductor structure 200 includes the preparation device 100 of the semiconductor structure, an exhaust system G and a liquid discharge system L.

[0139] The exhaust system G can be used for treating and discharging harmful gas generated in the production process of the device, for example, purifying and discharging the gas separated by the preparation device 100 of the semiconductor structure.

[0140] The liquid discharge system L can be used for treating and discharging liquid waste generated in the industrial production process, for example, filtering, purifying and other treatments are performed on the liquid separated by the preparation device 100 of the semiconductor structure, and then the treated liquid is discharged.

[0141] As shown in the figure, Figure 3 The exhaust system G can be in communication with the second flow guide pipe 3 of the preparation device 100 of the semiconductor structure, that is, it can be connected with one end of the second sub-portion 32 of the second flow guide pipe 3, so that the gas separated from the gas-liquid mixture enters the exhaust system through the second flow guide pipe 3 under the guidance of negative pressure for subsequent treatment, thereby avoiding the harmful gas from polluting the environment.

[0142] As shown in the figure, Figure 3 The liquid discharge system L can be in communication with the third flow guide pipe 4 of the preparation device 100 of the semiconductor structure, that is, it can be connected with one end of the third flow guide pipe 4 close to the ground, that is, the end of the third flow guide pipe 3, so that the liquid separated from the gas-liquid mixture enters the liquid discharge system through the third flow guide pipe 3 for subsequent treatment, thereby avoiding the harmful liquid from polluting the environment.

[0143] The technical effects brought by the preparation system 200 of the semiconductor structure provided by the embodiment of the present application can refer to the technical effects brought by the preparation device 100 of the semiconductor structure in the above embodiment, which will not be repeated here.

[0144] The above merely provides the specific implementation of the present application, but the protection scope of the present application is not limited to this. Any person skilled in the art can think of the changes or replacements within the technical range disclosed by the present application, which should be covered in the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. An apparatus for fabricating a semiconductor structure, characterized in that, include: The main stage is used to fabricate semiconductor structures; The main unit includes control components; The first guide pipe is connected to the main unit and is used to transmit the gas-liquid mixture discharged by the main unit; The second and third guide tubes are both connected to the first guide tube; under the action of gravity, the gas in the gas-liquid mixture is discharged from the second guide tube, and the liquid is discharged from the third guide tube; A detection structure is disposed on the second guide tube and is used to detect the flow status in the second guide tube; the detection structure is connected to the control component; A control valve is disposed within the second guide tube; the control valve is connected to the control assembly. The control component is configured to control the opening degree of the control valve based on the flow state.

2. The semiconductor structure fabrication apparatus according to claim 1, characterized in that, Also includes: The separator is provided with a separation chamber, and the first guide pipe, the second guide pipe and the third guide pipe are all connected to the separation chamber.

3. The semiconductor structure fabrication apparatus according to claim 2, characterized in that, Also includes: A reducing pipe is used to connect the first guide pipe to the separator; the diameter of the end of the reducing pipe connected to the separator is larger than the diameter of the end connected to the first guide pipe. The diameters of the second and third guide tubes are greater than the diameter of the first guide tube.

4. The semiconductor structure fabrication apparatus according to claim 1, characterized in that, The detection structure includes a pressure detector, which is used to detect the pressure value in the second guide tube; The control component is configured to increase the opening degree of the control valve based on the pressure value detected by the pressure detector being greater than a first preset value.

5. The semiconductor structure fabrication apparatus according to claim 4, characterized in that, The control component is further configured to control the main unit to shut down based on the pressure value detected by the pressure detector being greater than a second preset value; the second preset value being greater than the first preset value.

6. The semiconductor structure fabrication apparatus according to claim 1, characterized in that, The detection structure includes a sampling detector, which is used at least to detect the humidity in the second guide tube; The control component is configured to reduce the opening degree of the control valve based on the humidity detected by the sampling detector being greater than a third preset value.

7. The semiconductor structure fabrication apparatus according to claim 6, characterized in that, The main unit also includes a sensor for detecting the humidity of the gas-liquid mixture in the main unit; The control component is further configured to control the opening degree of the control valve to decrease based on the ratio between the humidity detected by the sampling detector and the humidity of the gas-liquid mixture being greater than a fourth preset value.

8. The semiconductor structure fabrication apparatus according to claim 1, characterized in that, The control component is also configured to control the main unit to issue an alarm based on the abnormal state of the flow state; the abnormal state is that the pressure value detected by the pressure detector is greater than a second preset value, or the humidity detected by the sampling detector is greater than a third preset value and the opening degree of the control valve is at the target opening degree.

9. The semiconductor structure fabrication apparatus according to claim 1, characterized in that, The third guide tube extends in a zigzag shape.

10. The semiconductor structure fabrication apparatus according to claim 1, characterized in that, The second guide tube includes a first sub-section and a second sub-section; the first sub-section extends in a straight line, and one end of the first sub-section is connected to the first guide tube, and the other end is connected to the second sub-section; the second sub-section bends toward the first guide tube.

11. A semiconductor structure fabrication system, characterized in that, include: Apparatus for fabricating a semiconductor structure as described in any one of claims 1 to 10; The exhaust system is connected to the second conduit in the semiconductor structure fabrication apparatus; The drainage system is connected to the third guide tube in the semiconductor structure fabrication apparatus.

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