Capacitor element structure adjusting method, device and equipment based on self-healing point identification

Abstract

The invention discloses a capacitor element structure adjusting method, device and equipment based on self-healing point recognition, and the method comprises the steps: carrying out the end face cutting of a capacitor element through a cutting assembly, and obtaining a capacitor roll core; the capacitor roll core is moved to the disassembling assembly through the moving assembly and is fixed; performing film disassembly on the capacitor roll core through a disassembly assembly, and periodically collecting a metalized film image in the disassembly process; binarization processing is carried out on each metallized film image, all self-healing points are identified from the binarized images, and self-healing parameters are extracted; and according to the respective healing parameter matching structure adjustment rule, generating a structure adjustment instruction of the capacitor element and issuing the instruction to a capacitor production line. Therefore, the completeness of the metallized film is effectively guaranteed through complete and continuous disassembly of the end face cutting and disassembly assembly, meanwhile, self-healing parameter extraction is rapidly and accurately carried out in a binarization processing mode in combination with image collection and recognition, and then subsequent capacitor elements are comprehensively and accurately adjusted.

Description

Technical Field

[0001] This invention relates to the field of capacitor structure adjustment technology, and in particular to a method, apparatus and device for adjusting the structure of capacitor elements based on self-healing point identification. Background Technology

[0002] Metallized film capacitors are widely used in high-voltage power applications due to their advantages such as good stability, long lifespan, low loss, and strong self-healing properties. However, manufacturing impurities, film defects, environmental factors, and high electric fields can cause localized dielectric breakdown within the capacitor, a phenomenon known as "self-healing." While this self-healing prevents the fault from escalating, it leads to a decrease in capacitance, an increase in dielectric loss, increased heat generation during operation, and accelerated aging of the dielectric material. Ultimately, this reduces the long-term reliability of the capacitor, posing a potential threat to the stability of high-voltage power systems.

[0003] High-voltage, high-capacity metallized film capacitors are typically composed of several capacitor elements connected in series and parallel, and self-healing occurs on these capacitor elements. Due to factors such as manufacturing process, ambient temperature, and voltage, the number, size, and location of self-healing points vary among different capacitors and even among different elements within the same capacitor. To evaluate self-healing characteristics and improve design and manufacturing, a comprehensive statistical analysis of the self-healing points within the components is necessary.

[0004] Therefore, traditional techniques typically analyze and process the charging and discharging voltage and current waveforms of the entire capacitor element, or only disassemble a portion or small piece of metallized film in the capacitor element for research and observation. The results are rather one-sided and it is difficult to obtain detailed characteristics of the self-healing points, making it impossible to comprehensively and accurately improve the structure of the capacitor element. Summary of the Invention

[0005] This invention provides a method, apparatus, and device for adjusting the structure of a capacitor element based on self-healing point identification. It solves the technical problem that traditional techniques usually analyze and process the charging and discharging voltage and current waveforms of the entire capacitor element, or only disassemble a part or a small piece of metallized film in the capacitor element for research and observation. The results are relatively one-sided and it is difficult to obtain detailed features of the self-healing point, so it is impossible to comprehensively and accurately improve the structure of the capacitor element.

[0006] The first aspect of this invention provides a method for adjusting the structure of a capacitor element based on self-healing point identification, comprising:

[0007] The cut-off component is invoked to cut off the end face of the capacitor element, resulting in the capacitor core;

[0008] The moving component is invoked to move the capacitor core onto the disassembly component and fix it in place;

[0009] The capacitor core is disassembled using the disassembly assembly, and images of the metallized thin film are periodically acquired during the disassembly process.

[0010] Each of the metallized thin film images is binarized, and all self-healing points are identified and self-healing parameters are extracted from the binarized images.

[0011] According to the self-healing parameter matching structure adjustment rules, the structure adjustment instructions for the capacitor element are generated and sent to the capacitor production line.

[0012] Optionally, before performing the step of calling the cutting component to cut off the end face of the capacitor element to obtain the capacitor core, the method further includes:

[0013] Call the initialization component to obtain any high-voltage, high-capacity metallized film capacitor from the capacitor production line;

[0014] The conductive terminals and conductive copper busbars are removed from the high-voltage, high-capacity metallized film capacitor by the initialization component.

[0015] The initialization component is used to disassemble the casing of the high-voltage, high-capacity metallized film capacitor and disconnect the electrical connections between the capacitor components.

[0016] The fixing structure of each capacitor element is removed by the initialization component, and the capacitor element is taken out.

[0017] Optionally, the step of cutting off the end face of the capacitor element to obtain the capacitor core includes:

[0018] The capacitor element is horizontally fixed using a clamp, and the cutting lines are marked.

[0019] Using a cutting tool, the metal ends of the capacitor element are cut off at low speed along the cutting line to obtain the capacitor core;

[0020] Alternatively, a hammering tool can be used to strike and peel off the metal ends of the capacitor element to obtain the capacitor core.

[0021] Optionally, the disassembly assembly includes an image acquisition module, a power module, a driven module, and a support frame. The image acquisition module, the power module, and the driven module are mounted on the support frame, and the capacitor core is fixed to the driven module. The step of disassembling the capacitor core using the disassembly assembly and periodically acquiring images of the metallized thin film during the disassembly process includes:

[0022] The power module drives the driven module to rotate, so that the capacitor core is disassembled into a metallized film and wound onto the power module;

[0023] The image acquisition module periodically acquires images of the metallized thin film corresponding to the metallized thin film during the disassembly process.

[0024] Optionally, the camera of the image acquisition module is oriented towards the surface of the metallized film;

[0025] A supplementary lighting module is also provided on the opposite side of the image acquisition module for supplementing the light to the film surface.

[0026] Optionally, the step of binarizing each of the metallized thin film images, identifying all self-healing points from the binarized images, and extracting self-healing parameters includes:

[0027] Each of the metallized thin film images is numbered and binarized to obtain a binarized image and an image number;

[0028] The image recognition model is invoked to perform image recognition on the binarized image, and all bright spots in the binarized image are identified as self-healing points;

[0029] Self-healing parameters are extracted from each of the self-healing points according to the image number.

[0030] Optionally, the self-healing parameters include self-healing point density, self-healing point location, self-healing point area, and self-healing point shape factor; the step of extracting the self-healing parameters from each of the self-healing points according to the image number includes:

[0031] According to the image number and the position of each self-healing point in the corresponding binary image, determine the self-healing point position of each self-healing point on the capacitor core.

[0032] Calculate the self-healing point density corresponding to the capacitor core;

[0033] The image of the region where each self-healing point is located is gridded according to a preset grid size to determine the number of self-healing point grids.

[0034] Calculate the area and perimeter of each self-healing point according to the number of self-healing point grids and the grid size;

[0035] Based on the area and perimeter of the self-healing point, calculate the shape factor of each self-healing point.

[0036] Optionally, the step of generating a structural adjustment instruction for the capacitor element according to the self-healing parameter matching structural adjustment rules and issuing it to the capacitor production line includes:

[0037] If the self-healing point density exceeds a preset density threshold, the core gradient thickness is determined according to the electric field distribution of the capacitor core.

[0038] According to the core gradient thickness, the corresponding evaporation rate and substrate moving speed are matched, and the first structural adjustment instruction of the capacitor element is generated and sent to the capacitor production line.

[0039] If the number of self-healing points located at both ends of the capacitor core exceeds a concentration threshold, a second structural adjustment instruction for the capacitor element is generated and sent to the capacitor production line to add an electrode thickening layer with a rounded edge at the end of the capacitor core.

[0040] If the number of self-healing points located in the middle of the capacitor core exceeds the concentration threshold, a third structural adjustment instruction for the capacitor element is generated and sent to the capacitor production line to calibrate the vapor deposition thickness or adjust the vapor deposition metal ratio.

[0041] If the area of ​​the self-healing point exceeds the area threshold, and the deviation between the shape factor of the self-healing point and the standard shape factor is greater than the preset shape factor threshold, then a fourth structural adjustment instruction for the capacitor element is generated and sent to the capacitor production line to reduce the thickness of the vapor-deposited metal layer of the capacitor core according to a preset thickness gradient.

[0042] A second aspect of the present invention provides a capacitor element structure adjustment device based on self-healing point identification, comprising:

[0043] The end-face cutting module is used to cut off the end face of the capacitor element to obtain the capacitor core;

[0044] The core moving module is used to move the capacitor core onto the disassembly assembly and fix it in place;

[0045] The thin film image acquisition module is used to disassemble the capacitor core using the disassembly component and periodically acquire images of the metallized thin film during the disassembly process.

[0046] The self-healing parameter extraction module is used to perform binarization processing on each of the metallized thin film images, identify all self-healing points from the binarized images, and extract the self-healing parameters.

[0047] The adjustment instruction issuing module is used to generate structural adjustment instructions for the capacitor element according to the self-healing parameter matching structural adjustment rules and issue them to the capacitor production line.

[0048] A third aspect of the present invention provides an electronic device, including a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the processor performs the steps of the capacitor element structure adjustment method based on self-healing point identification as described in any one of the first aspects of the present invention.

[0049] As can be seen from the above technical solutions, the present invention has the following advantages:

[0050] This invention involves using a cutting component to cut off the end face of a capacitor element, obtaining a capacitor core; using a moving component to move the capacitor core onto a disassembly component and fix it in place; using the disassembly component to disassemble the thin film of the capacitor core, and periodically acquiring images of the metallized thin film during the disassembly process; performing binarization processing on each metallized thin film image, identifying all self-healing points from the binarized images and extracting self-healing parameters; and generating structural adjustment instructions for the capacitor element according to the structural adjustment rules matching the respective healing parameters, which are then sent to the capacitor production line. Thus, through the complete and continuous disassembly via end face cutting and the disassembly component, the integrity of the metallized thin film is effectively ensured. Simultaneously, combined with image acquisition and recognition, and using binarization processing, self-healing parameters are extracted quickly and accurately, enabling subsequent comprehensive and accurate adjustment of the capacitor element. Attached Figure Description

[0051] To more clearly illustrate the technical solutions in the embodiments of the present invention or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0052] Figure 1 A flowchart illustrating the steps of a capacitor element structure adjustment method based on self-healing point identification, provided in an embodiment of the present invention;

[0053] Figure 2 This is a schematic diagram of a capacitor element structure provided in an embodiment of the present invention;

[0054] Figure 3 This is a schematic diagram illustrating the main process of peeling off the capacitor element in an embodiment of the present invention;

[0055] Figure 4 This is a structural block diagram of a capacitor element structure adjustment device based on self-healing point identification, provided in an embodiment of the present invention. Detailed Implementation

[0056] Metallized film capacitors (MTCs) are widely used in high-voltage power applications due to their advantages such as good stability, long lifespan, low loss, and strong self-healing capabilities. Despite significant technological improvements over the years, minor impurities remaining during manufacturing, microscopic defects on the film surface, and the combined effects of temperature fluctuations, humidity variations, and the high electric field during operation can trigger localized dielectric breakdown within the capacitor—a phenomenon known as "self-healing." While this self-healing mechanism protects the capacitor by creating an insulating region through the instantaneous vaporization of the metal electrodes around the breakdown point, preventing further damage, it inevitably negatively impacts performance. Firstly, localized electrode material losses directly reduce capacitance. Secondly, the resulting micro-gaps and electrode residues increase dielectric losses, leading to increased heat generation and accelerated dielectric aging. The accumulation of these issues ultimately significantly weakens the capacitor's long-term reliable operation, posing a potential threat to the stability of high-voltage power systems. Traditional techniques primarily analyze the charging and discharging voltage and current waveforms of the entire capacitor element, failing to obtain detailed characteristics of internal self-healing points. Furthermore, since a capacitor element is composed of thousands of meters of metallized thin film, most studies only disassemble a portion of the metallized thin film within the capacitor element for observation, or use small pieces of metallized thin film for research and statistical analysis, making it impossible to conduct statistical analysis of the entire internal condition of the capacitor element.

[0057] To address this, embodiments of the present invention provide a method, apparatus, and device for adjusting the structure of a capacitor element based on self-healing point identification. This addresses the technical problem that traditional techniques typically analyze and process the charging and discharging voltage and current waveforms of the entire capacitor element, or only disassemble a portion or small piece of metallized film within the capacitor element for research and observation. The results are rather one-sided and it is difficult to obtain detailed characteristics of the self-healing points, thus failing to comprehensively and accurately improve the structure of the capacitor element.

[0058] To make the objectives, features, and advantages of this invention more apparent and understandable, the technical solutions of the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described below are only some embodiments of this invention, and not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0059] Please see Figure 1 , Figure 1 This is a flowchart illustrating the steps of a capacitor element structure adjustment method based on self-healing point identification, provided in an embodiment of the present invention.

[0060] This invention provides a method for adjusting the structure of a capacitor element based on self-healing point identification, comprising:

[0061] Step 101: Use the cutting component to cut off the end face of the capacitor element to obtain the capacitor core;

[0062] The capacitor element is the basic building block of a high-voltage metallized film capacitor. It consists of a core formed by winding several kilometers of metallized film around a mandrel, with metal layers sprayed onto both ends to achieve electrical connection between each film layer. In this embodiment, it mainly refers to a film capacitor element used in high-voltage power equipment. Its shape is cylindrical, typically with a diameter of about 70mm and a height of about 150mm. Figure 2 As shown, it includes metal end faces at both ends and a metallized thin film. The metallized thin film includes a gold-plated layer and a dielectric thin film. The gold-plated layer is located between the electrode and the dielectric thin film and is formed through a gold-plating process. It enhances the conductivity between the electrode and the dielectric thin film, reduces contact resistance, ensures efficient charge transfer, and improves capacitor performance. The dielectric thin film, as the core insulating medium of the capacitor, is usually made of polymer materials such as polypropylene. Its insulating properties determine the capacitor's withstand voltage and energy storage performance. It is wound into a cylindrical shape to form the basic structure of the capacitor, realizing charge storage and electric field establishment.

[0063] Since a capacitor element is formed by winding thousands of meters of metallized thin film around a core, after winding, metal needs to be sprayed onto both ends to form metal end faces, which form an electrical connection with each layer of film. However, during the disassembly process, the presence of metal end faces often tears the film, resulting in incomplete film removal and making the disassembly and film tearing process unsustainable. Therefore, in this embodiment of the invention, after randomly selecting a capacitor element, it is placed horizontally in a rubber V-shaped clamp, and the clamp is slowly tightened to ensure that the axis of the capacitor element is perpendicular to the cutting saw blade. A cutting saw or laser is then used to cut it at low speed to remove the metal end faces from both ends of the capacitor element, obtaining the capacitor core.

[0064] In one example of the present invention, step 101 may include the following sub-steps:

[0065] The capacitor element is horizontally fixed using a clamp, and the cutting lines are marked.

[0066] Using a cutting tool, the metal ends of the capacitor element are cut off at low speed along the cutting line to obtain the capacitor core;

[0067] Alternatively, a hammering tool can be used to strike and peel off the metal ends of the capacitor element to obtain the capacitor core.

[0068] The fixing fixture refers to a rubber V-shaped fixture. Its core function is to ensure that the capacitor element remains horizontal and does not shift during the cutting / tapping process, while also preventing the fixture material from damaging the outer film of the capacitor element.

[0069] The cutting line refers to the baseline used to mark the extent of metal cut-off at both ends of a capacitor element.

[0070] Cutting tools refer to equipment that enables low-speed cutting of metal end faces. They can be low-speed cutting saws equipped with fine-toothed saw blades, and can also be equipped with compressed air or water-soluble cooling systems to prevent the cutting temperature from being too high and melting the capacitor film.

[0071] In this embodiment, the clamp is slowly tightened using the adjustment knobs on both sides to ensure that the axis of the capacitor element is parallel to the horizontal plane and that the element does not wobble. A cutting line is marked 2-3 mm from each metal end face. The clamp is moved to the working area of ​​the cutting saw, and its position is adjusted so that the cutting line at one end is completely aligned with the saw blade plane. The cutting saw is started, and once the saw blade speed stabilizes at a preset value, such as 800 rpm, the capacitor element is brought closer to the saw blade at a uniform speed, cutting the metal end face along the cutting line. After cutting one end of the metal end face, the cutting saw is turned off. Once the saw blade has completely stopped rotating, the clamp is released, the capacitor element is rotated 180°, and the other end of the metal end face is cut using the same process, resulting in a capacitor core composed of a metallized film and a mandrel.

[0072] In addition, after the end face of the capacitor element is cut off, it can be visually inspected and debris cleaned to avoid affecting the subsequent disassembly process.

[0073] In another example, the metal end face of the capacitor element can be tapped with a rubber hammer by another mechanism until a fine crack appears on the metal end face. The cracked area is then tapped continuously to allow the crack to gradually expand to the entire metal end face until the metal end face breaks into small pieces with a diameter of ≤5mm. All the broken metal pieces are then peeled off and the metal debris at both ends of the capacitor core and the outer film is cleaned to obtain the capacitor core.

[0074] In one example of the present invention, before performing step 101, the method may further include the following steps:

[0075] Call the initialization component to obtain any high-voltage, high-capacity metallized film capacitor from the capacitor production line;

[0076] The conductive terminals and conductive copper busbars are removed from the high-voltage, high-capacity metallized film capacitor by the initialization component.

[0077] The initialization component is used to disassemble the casing of the high-voltage, high-capacity metallized film capacitor and disconnect the electrical connections between the capacitor components.

[0078] The fixing structure of each capacitor element is removed by the initialization component, and the capacitor element is taken out.

[0079] High-voltage, high-capacity metallized film capacitors are composed of several capacitor elements connected in series and parallel. They have an external structure including a shell, conductive terminals, and conductive copper busbars, while the internal capacitor elements are metallized film wound bodies (with metal end faces). They have the characteristics of good stability and strong self-healing properties and are widely used in high-voltage power scenarios.

[0080] like Figure 3 As shown, Figure 3 This is a schematic diagram illustrating the main process of peeling off the capacitor element in an embodiment of the present invention.

[0081] In this embodiment of the invention, any high-voltage, high-capacity metallized film capacitor to be analyzed is selected from the finished product inspection station or the sample area to be disassembled on the capacitor production line. Simultaneously, parameters such as capacitor model, production batch, and rated voltage / capacitance are recorded for subsequent result traceability. After obtaining the capacitor, the fixing bolts between the conductive terminals and the capacitor casing are unscrewed, and the conductive terminals are pulled out perpendicular to the casing. If the conductive copper busbar and the capacitor element are welded, the wire at the weld point is cut with diagonal pliers, ensuring the cut is ≥5mm from the metal end face of the capacitor element to avoid damaging the end face. If the conductive copper busbar and the capacitor element are bolted, the connecting bolts are unscrewed with a screwdriver. After all connection points are disconnected, the conductive copper busbar is removed. The capacitor casing is disassembled, and the electrical connections between each capacitor element are disconnected. Identify the fixing structure of the capacitor element (commonly plastic brackets, metal clips, or insulating straps): If it is fixed by a bracket, use a screwdriver to unscrew the bolts fixing the bracket to the lower shell and remove the bracket; if it is fixed by clips, use a flathead screwdriver to pry the elastic arm of the clip to loosen it; if it is fixed by straps, use diagonal pliers to cut the straps. After all fixing structures have been removed, grasp both ends of the individual capacitor element and slowly remove it in a direction perpendicular to the lower shell.

[0082] Step 102: Use the moving component to move the capacitor core onto the disassembly component and fix it in place;

[0083] The disassembly assembly refers to the component equipment used to continuously and completely disassemble the capacitor core, including but not limited to image acquisition module, power module, driven module and support frame, etc. In addition, to improve the stability of disassembly, a guide module can be used to correct its deviation, the driven module fixes the capacitor core and provides rotational resistance, the power module is driven by a motor to wind up the film, and the guide module prevents the film from deviating.

[0084] In this embodiment of the invention, after the end face of the capacitor element is cut off, a capacitor core without a metal end face is obtained. The capacitor core is horizontally sleeved on the driven shaft of the driven module and fixed by the furniture at both ends of the driven shaft, so that the capacitor core is in a horizontal suspended state to avoid damage to the film caused by friction with other components.

[0085] In addition, the disassembled components can be adjusted and calibrated before the capacitor core is moved to adjust its resistance and axis parallelism.

[0086] Step 103: Disassemble the capacitor core by disassembling the components and periodically collect images of the metallized thin film during the disassembly process.

[0087] Metallized thin film images refer to thin film images obtained during the disassembly process of capacitor cores.

[0088] In this embodiment of the invention, after the capacitor core is fixed, the metallized film is removed using a disassembly assembly. Specifically, the drive shaft motor of the power module is first started and its speed stabilized, then the image acquisition module and the supplementary lighting module are started simultaneously. The power module drives the driven module to rotate, peeling the metallized film of the capacitor core from the core shaft. A certain amount of resistance exists when the driven shaft rotates to ensure a smooth peeling of the film. The uniform peeling speed is ensured by controlling the motor speed. Simultaneously, the image acquisition module periodically acquires images of the metallized film during the disassembly process.

[0089] It should be noted that the metallized film image should fill the entire screen as much as possible to clearly capture the entire metallized film, and the size of each metallized film image should be consistent.

[0090] In one example of the present invention, the disassembly assembly includes an image acquisition module, a power module, a driven module, and a support frame. The image acquisition module, power module, and driven module are mounted on the support frame, and the capacitor winding core is fixed on the driven module. Step 102 may include the following sub-steps:

[0091] The power module drives the driven module to rotate, so that the capacitor core is disassembled into a metallized film and wound onto the power module.

[0092] The image acquisition module periodically acquires images of the metallized thin film corresponding to the metallized thin film during the disassembly process.

[0093] In this embodiment of the invention, the capacitor element to be disassembled is fixed on the driven module, and the torn film is wound up by the power module. A certain distance is left between the power module and the driven module for taking pictures. The power module is driven by a motor, and there is a certain resistance when the driven module rotates so that the film can be kept flat when it is torn. The film can be torn at a uniform speed by controlling the speed of the motor.

[0094] The drive motor speed of the power module can be set according to the metallization film thickness of the capacitor core. For example, if the film thickness is 5μm, the speed should be set to 10 rpm. The speed decreases as the thickness decreases to avoid film stretching. The rotational resistance of the driven shaft of the driven module can be set using the spring knob of the resistance adjustment mechanism. .

[0095] In this module, the camera of the image acquisition module faces the surface of the metallized thin film;

[0096] A supplementary lighting module is also provided on the opposite side of the image acquisition module to provide supplementary lighting to the film surface.

[0097] In this embodiment, the metallized film images are periodically acquired by the image acquisition module. The camera position is fixed and a scale bar is placed to ensure that each metallized film image meets the following requirements: the film completely fills the image screen without edge cropping (if it is not full, the camera height is finely adjusted until the entire width of the film is covered); the self-healing points (bright spots) are not blurred or have shadows (if they are blurred, the brightness of the light box is increased; if there are shadows, the position of the light box is adjusted to ensure uniform backlighting); and the film area of ​​two consecutive images does not overlap.

[0098] A white lightbox is used to illuminate the back of the metallized film to clearly distinguish the self-healing points and other parts. By controlling the motor speed and camera shutter, ensuring that two consecutive photos neither overlap nor miss any areas, images of the metallized film within the capacitor element can be captured.

[0099] In addition to using a high-definition camera, when collecting information by taking photos, you can also use a video camera to capture images and then take screenshots. The tools used for data collection can be changed.

[0100] Step 104: Perform binarization processing on each metallized thin film image, identify all self-healing points from the binarized image and extract the self-healing parameters;

[0101] Self-healing parameters refer to quantitative indicators that characterize the features of self-healing points, including information such as location, area, shape factor, and density.

[0102] Since the metallized film that has not undergone self-healing appears grayish-black in the binarized image, while the self-healing points appear as bright spots after self-healing, the two can be clearly distinguished. After binarizing the image, all bright spots can be considered as self-healing points. Therefore, after acquiring all the metallized film images of the capacitor core, each metallized film image is binarized to convert the acquired color image into a binarized image. From this, all self-healing points and their locations and quantities are identified. Then, the self-healing parameters corresponding to each self-healing point are extracted from the binarized image as the data basis for subsequent structural adjustments.

[0103] In one example of the present invention, step 104 may include the following sub-steps S11-S13:

[0104] S11. Number each metallized thin film image and perform binarization processing on each image to obtain a binarized image and an image number;

[0105] In this embodiment of the invention, by importing the metallized thin film image dataset into the image processing software, each metallized thin film image is numbered according to the image capture timestamp. If there is a numbering error (e.g., “IMG_005” was captured earlier than “IMG_004”), the numbering is corrected again according to the time sequence to ensure that the numbering order is the same as the thin film disassembly order.

[0106] After numbering the metallized film images, each metallized film image is binarized. Specifically, each metallized film image can be converted from color format to grayscale format, and after denoising, it is binarized according to a preset threshold, such as a grayscale value of 180. Pixels with a grayscale value ≥ 180 are set to 255 (white, candidate self-healing point), and pixels with a grayscale value < 180 are set to 0 (black, normal metallized film area), thus obtaining a binarized image.

[0107] S12. Call the image recognition model to perform image recognition on the binarized image and identify all bright spots in the binarized image as self-healing points;

[0108] In this embodiment, an image recognition model is invoked to identify all white connected regions (i.e., the set of adjacent pixels with a pixel value of 255) in the binarized image. Each connected region corresponds to a "self-healing point candidate object". All candidate objects are traversed, and the area of ​​each object is calculated (based on the mapping relationship between image pixels and actual size, such as 1 pixel corresponding to 0.001 mm²). Candidate objects with an area < 0.001 mm² are eliminated. For the retained candidate objects, their contour coordinates are extracted to determine the boundary range of the self-healing point and obtain the self-healing point.

[0109] S13. Extract the self-healing parameters from each healing point according to the image number.

[0110] Furthermore, the self-healing parameters include self-healing point density, self-healing point location, self-healing point area, and self-healing point shape factor; S13 may include the following sub-steps:

[0111] Based on the image number and the position of each healing point in its respective binary image, determine the self-healing point position of each healing point on the capacitor core;

[0112] Calculate the density of self-healing points corresponding to the capacitor core;

[0113] The image of the region where each self-healing point is located is meshed according to the preset mesh size to determine the number of self-healing point meshes.

[0114] Calculate the self-healing point area and self-healing point perimeter corresponding to each self-healing point according to the number and size of the self-healing point grids;

[0115] Calculate the shape factor of each self-healing point based on its area and perimeter.

[0116] In this embodiment of the invention, since each photograph is the same size, the location of the self-healing point along the entire length of the capacitor element can be calculated by statistically analyzing the photograph number and the position of each self-healing point along the length of the photograph. In the width direction, with the center as the origin, the position of each self-healing point in the width direction can be calculated.

[0117]

[0118] in, Let be the position of the i-th self-healing point, with coordinates (l, w); m is the photo number where the i-th self-healing point is located; a is the length of each photo; b is the position of the i-th self-healing point in the length direction of the photo; and c is the position of the i-th self-healing point in the width direction of the photo.

[0119] Since some self-healing points are circular in shape, while a small number exhibit irregular shapes, each actual self-healing image can be first meshed into multiple square grids. The area of ​​each self-healing point can then be calculated as follows:

[0120]

[0121] in: Let i be the area of ​​the i-th self-healing point. Let be the number of square grids into which the i-th self-healing point is divided. Let be the side length of the square grid divided within the i-th self-healing point. To simplify the differentiation process and speed up the statistical process, batch processing is performed, and the side length of the differential square grid within the same self-healing point remains consistent.

[0122] To facilitate comparison of morphological differences at different self-healing points, a shape factor is used to represent the morphological differences of each self-healing point:

[0123]

[0124] in, Let be the shape factor of the i-th self-healing point. Let i be the area of ​​the i-th self-healing point. Let be the perimeter of the i-th self-healing point.

[0125] Meanwhile, by traversing all binarized images, the number of self-healing points identified in each image is summarized, and the total unfolded area of ​​the metallized film is calculated. The ratio of the number of self-healing points to the total unfolded area is calculated to obtain the self-healing point density.

[0126] Step 105: Generate structural adjustment instructions for capacitor components according to their respective parameter matching structural adjustment rules and send them to the capacitor production line.

[0127] Structural adjustment rules refer to the judgment criteria for reverse optimization of capacitor element design / manufacturing based on self-healing parameters, and can be stored in tables or other matching and searchable formats.

[0128] Structural adjustment instructions refer to specific operational parameters generated according to structural adjustment rules that can be directly issued to the production line. These parameters include electrode thickness distribution, vapor deposition process parameters (such as metal ratio and rate), and end structure dimensions. The instruction format is compatible with the control system of the capacitor production line.

[0129] In this embodiment of the invention, structural adjustment rules are matched according to their respective healing parameters to determine the structural problems existing in the batch of capacitor cores. Structural adjustment instructions corresponding to the determined structural problems are generated and sent to the capacitor production line, such as the PLC control system of the vapor deposition process or the control system of the electrode forming process, so that the production line can adjust the process according to the instructions, reducing losses caused by the self-healing phenomenon.

[0130] In one example of the present invention, step 105 may include the following sub-steps:

[0131] If the self-healing point density exceeds the preset density threshold, the core gradient thickness is determined according to the electric field distribution of the capacitor core.

[0132] According to the core thickness gradient, the corresponding evaporation rate and substrate moving speed are matched, the first structural adjustment instruction of the capacitor element is generated and sent to the capacitor production line.

[0133] If the number of self-healing points located at both ends of the capacitor core exceeds the concentration threshold, a second structural adjustment instruction for the capacitor element is generated and sent to the capacitor production line to add an electrode thickening layer with a rounded edge at the end of the capacitor core.

[0134] If the number of self-healing points located in the middle of the capacitor core exceeds the concentration threshold, a third structural adjustment instruction for the capacitor element is generated and sent to the capacitor production line to calibrate the vapor deposition thickness or adjust the vapor deposition metal ratio.

[0135] If the area of ​​the self-healing point exceeds the area threshold, and the deviation between the shape factor of the self-healing point and the standard shape factor is greater than the preset shape factor threshold, then a fourth structural adjustment instruction for the capacitor element is generated and sent to the capacitor production line to reduce the thickness of the vapor-deposited metal layer of the capacitor core according to the preset thickness gradient.

[0136] In this embodiment of the invention, if the density of self-healing points exceeds a preset density threshold, it indicates that the electrode structure design needs to be adjusted, and a gradient thickness electrode should be adopted to reduce the probability of local breakdown caused by electric field concentration. The electric field distribution of the original uniform electrode can be simulated using an electric field simulation tool to locate areas of electric field concentration, such as electrode edges and winding layer gaps. Then, a core gradient thickness can be designed, such as 0.5-0.8 μm at the edges and 1.0 μm in the middle. Subsequently, the vapor deposition process parameters are matched (vapor deposition rate of 3 nm / s and substrate moving speed of 5 mm / s in the edge area, and the original rate of 5 nm / s and moving speed of 8 mm / s in the middle area), generating a first structural adjustment instruction containing an instruction number, applicable process, adjustment parameters, and quality requirements. Finally, the instruction is sent to the PLC system of the capacitor production line vapor deposition process via an industrial Ethernet module.

[0137] If the number of self-healing points located at both ends of the capacitor core exceeds a concentration threshold such as 70% or 80%, it indicates that the end design needs to be improved. The thickened area should adopt a rounded transition electrode structure to weaken the electric field strength at the end edge. For example, the electrode thickness can be increased in the end area of ​​the core, and the edge of the thickened layer can be processed into a rounded arc of a certain radius. At the same time, epoxy resin sealant can be applied to the rounded arc area. Subsequently, a second structural adjustment instruction containing end thickening parameters, rounded arc processing requirements, and sealing process is generated and synchronously sent to the PLC of the electrode forming process and the sealing process on the production line via the industrial Ethernet module.

[0138] If the number of self-healing points located in the middle of the capacitor core exceeds a concentration threshold such as 70% or 80%, it indicates that the electrode evaporation scheme needs to be improved, the evaporation area thickened, or the ratio of each metal in the evaporation needs to be adjusted. At this time, the evaporation thickness in the middle area can be calibrated by increasing the evaporation rate, or the evaporation metal ratio can be adjusted from 95% aluminum + 5% zinc to 90% aluminum + 10% zinc. Subsequently, a third structural adjustment instruction containing evaporation thickness calibration parameters, metal ratio adjustment requirements, and testing standards is generated and sent to the PLC of the evaporation process and the quality inspection process system on the production line, requiring the quality inspection process to increase the frequency of testing the middle thickness and metal ratio.

[0139] If the area of ​​the self-healing point exceeds the area threshold, and the deviation of the shape factor of the self-healing point from the standard shape factor is greater than the preset shape factor threshold, it indicates that the self-healing energy is relatively high, and the thickness of the vapor-deposited metal layer needs to be reduced to achieve the purpose of reducing the self-healing energy. Specifically, the metal layer thinning rate can be calculated. Based on the rule that the self-healing energy decreases by 1.5mJ for every 0.1μm reduction in thickness, the original metal layer thickness is gradually reduced by shortening the vapor deposition time, while maintaining a vapor deposition rate of 5nm / s to ensure thickness uniformity. Subsequently, a fourth structural adjustment instruction containing the target metal layer thickness, vapor deposition time adjustment, and performance monitoring requirements is generated and sent to the PLC of the vapor deposition process and the performance testing process system on the production line. The performance testing process is required to focus on monitoring the capacitance and withstand voltage.

[0140] In this embodiment of the invention, a capacitor core is obtained by cutting off the end face of the capacitor element; the capacitor core is moved to and fixed on the disassembly assembly; the capacitor core is disassembled using the disassembly assembly, and images of the metallized film during the disassembly process are periodically acquired; each metallized film image is binarized, and all self-healing points are identified and self-healing parameters are extracted from the binarized images; according to the structural adjustment rules matching the respective healing parameters, a structural adjustment instruction for the capacitor element is generated and sent to the capacitor production line. Thus, through the complete and continuous disassembly of the end face and the disassembly assembly, the integrity of the metallized film is effectively guaranteed. Simultaneously, combined with image acquisition and recognition, self-healing parameters are extracted quickly and accurately using binarization processing, thereby enabling comprehensive and accurate adjustment of the subsequent capacitor element.

[0141] Please see Figure 4 , Figure 4 A structural block diagram of a capacitor element structure adjustment device based on self-healing point identification is shown in an embodiment of the present invention.

[0142] This invention provides a capacitor element structure adjustment device based on self-healing point identification, comprising:

[0143] The end face cutting module 401 is used to call the cutting component to cut off the end face of the capacitor element to obtain the capacitor core.

[0144] The core moving module 402 is used to call the moving component to move the capacitor core onto the disassembly component and fix it in place;

[0145] The thin film image acquisition module 403 is used to disassemble the capacitor core through the disassembly component and periodically acquire images of the metallized thin film during the disassembly process.

[0146] The self-healing parameter extraction module 404 is used to perform binarization processing on each metallized thin film image, identify all self-healing points from the binarized image and extract the self-healing parameters.

[0147] The adjustment instruction issuing module 405 is used to generate structural adjustment instructions for capacitor elements according to their respective parameter matching structural adjustment rules and issue them to the capacitor production line.

[0148] Optionally, the device also includes a capacitor removal module, specifically used for:

[0149] Call the initialization component to obtain any high-voltage, high-capacity metallized film capacitor from the capacitor production line;

[0150] The conductive terminals and conductive copper busbars are removed from the high-voltage, high-capacity metallized film capacitor by the initialization component.

[0151] The initialization component is used to disassemble the casing of the high-voltage, high-capacity metallized film capacitor and disconnect the electrical connections between the capacitor components.

[0152] The fixing structure of each capacitor element is removed by the initialization component, and the capacitor element is taken out.

[0153] Optionally, the end face cutting module 401 is specifically used for:

[0154] The capacitor element is horizontally fixed using a clamp, and the cutting lines are marked.

[0155] Using a cutting tool, the metal ends of the capacitor element are cut off at low speed along the cutting line to obtain the capacitor core;

[0156] Alternatively, a hammering tool can be used to strike and peel off the metal ends of the capacitor element to obtain the capacitor core.

[0157] Optionally, the disassembled components include an image acquisition module, a power module, a driven module, and a support frame. The image acquisition module, power module, and driven module are mounted on the support frame, and the capacitor core is fixed to the driven module. The thin-film image acquisition module 403 is specifically used for:

[0158] The power module drives the driven module to rotate, so that the capacitor core is disassembled into a metallized film and wound onto the power module.

[0159] The image acquisition module periodically acquires images of the metallized thin film corresponding to the metallized thin film during the disassembly process.

[0160] Optionally, the camera of the image acquisition module is oriented towards the surface of the metallized thin film;

[0161] A supplementary lighting module is also provided on the opposite side of the image acquisition module to provide supplementary lighting to the film surface.

[0162] Optionally, the self-healing parameter extraction module 404 includes:

[0163] The binarization processing submodule is used to number each metallized thin film image and perform binarization processing on each image to obtain a binarized image and an image number.

[0164] The self-healing point recognition submodule is used to call the image recognition model to perform image recognition on the binarized image and identify all bright spots in the binarized image as self-healing points.

[0165] The self-healing parameter extraction submodule is used to extract self-healing parameters from each healing point according to the image number.

[0166] Optionally, the self-healing parameters include self-healing point density, self-healing point location, self-healing point area, and self-healing point shape factor; the self-healing parameter extraction submodule is specifically used for:

[0167] Based on the image number and the position of each healing point in its respective binary image, determine the self-healing point position of each healing point on the capacitor core;

[0168] Calculate the density of self-healing points corresponding to the capacitor core;

[0169] The image of the region where each self-healing point is located is meshed according to the preset mesh size to determine the number of self-healing point meshes.

[0170] Calculate the self-healing point area and self-healing point perimeter corresponding to each self-healing point according to the number and size of the self-healing point grids;

[0171] Calculate the shape factor of each self-healing point based on its area and perimeter.

[0172] Optionally, the adjustment instruction issuing module 405 is specifically used for:

[0173] If the self-healing point density exceeds the preset density threshold, the core gradient thickness is determined according to the electric field distribution of the capacitor core.

[0174] According to the core thickness gradient, the corresponding evaporation rate and substrate moving speed are matched, the first structural adjustment instruction of the capacitor element is generated and sent to the capacitor production line.

[0175] If the number of self-healing points located at both ends of the capacitor core exceeds the concentration threshold, a second structural adjustment instruction for the capacitor element is generated and sent to the capacitor production line to add an electrode thickening layer with a rounded edge at the end of the capacitor core.

[0176] If the number of self-healing points located in the middle of the capacitor core exceeds the concentration threshold, a third structural adjustment instruction for the capacitor element is generated and sent to the capacitor production line to calibrate the vapor deposition thickness or adjust the vapor deposition metal ratio.

[0177] If the area of ​​the self-healing point exceeds the area threshold, and the deviation between the shape factor of the self-healing point and the standard shape factor is greater than the preset shape factor threshold, then a fourth structural adjustment instruction for the capacitor element is generated and sent to the capacitor production line to reduce the thickness of the vapor-deposited metal layer of the capacitor core according to the preset thickness gradient.

[0178] This invention provides an electronic device, including a memory and a processor. The memory stores a computer program, and when the computer program is executed by the processor, the processor performs the steps of the capacitor element structure adjustment method based on self-healing point identification as described in any embodiment of this invention.

[0179] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working process of the above-described device and module can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0180] In the several embodiments provided by this invention, it should be understood that the disclosed apparatus and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of modules is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple modules or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or modules may be electrical, mechanical, or other forms.

[0181] The modules described as separate components may or may not be physically separate. The components shown as modules may or may not be physical modules; that is, they may be located in one place or distributed across multiple network modules. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs.

[0182] Furthermore, the functional modules in the various embodiments of the present invention can be integrated into one processing module, or each module can exist physically separately, or two or more modules can be integrated into one module. The integrated modules described above can be implemented in hardware or as software functional modules.

[0183] The above-described embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for adjusting the structure of a capacitor element based on self-healing point identification, characterized in that, include: The cut-off component is invoked to cut off the end face of the capacitor element, resulting in the capacitor core; The moving component is invoked to move the capacitor core onto the disassembly component and fix it in place; The capacitor core is disassembled using the disassembly assembly, and images of the metallized thin film are periodically acquired during the disassembly process. Each of the metallized thin film images is binarized, and all self-healing points are identified and self-healing parameters are extracted from the binarized images. According to the self-healing parameter matching structure adjustment rules, the structure adjustment instructions for the capacitor element are generated and sent to the capacitor production line.

2. The method according to claim 1, characterized in that, Before executing the step of calling the cutting component to cut off the end face of the capacitor element to obtain the capacitor core, the method further includes: Call the initialization component to obtain any high-voltage, high-capacity metallized film capacitor from the capacitor production line; The conductive terminals and conductive copper busbars are removed from the high-voltage, high-capacity metallized film capacitor by the initialization component. The initialization component is used to disassemble the casing of the high-voltage, high-capacity metallized film capacitor and disconnect the electrical connections between the capacitor components. The fixing structure of each capacitor element is removed by the initialization component, and the capacitor element is taken out.

3. The method according to claim 1, characterized in that, The step of cutting off the end face of the capacitor element to obtain the capacitor core includes: The capacitor element is horizontally fixed using a clamp, and the cutting lines are marked. Using a cutting tool, the metal ends of the capacitor element are cut off at low speed along the cutting line to obtain the capacitor core; Alternatively, a hammering tool can be used to strike and peel off the metal ends of the capacitor element to obtain the capacitor core.

4. The method according to claim 1, characterized in that, The disassembly assembly includes an image acquisition module, a power module, a driven module, and a support frame. The image acquisition module, the power module, and the driven module are mounted on the support frame, and the capacitor core is fixed on the driven module. The step of disassembling the capacitor core using the disassembly assembly and periodically acquiring images of the metallized thin film during the disassembly process includes: The power module drives the driven module to rotate, so that the capacitor core is disassembled into a metallized film and wound onto the power module; The image acquisition module periodically acquires images of the metallized thin film corresponding to the metallized thin film during the disassembly process.

5. The method according to claim 4, characterized in that, The camera of the image acquisition module is oriented towards the surface of the metallized thin film; A supplementary lighting module is also provided on the opposite side of the image acquisition module for supplementing the light to the film surface.

6. The method according to claim 1, characterized in that, The step of binarizing each of the metallized thin film images, identifying all self-healing points from the binarized images, and extracting self-healing parameters includes: Each of the metallized thin film images is numbered and binarized to obtain a binarized image and an image number; The image recognition model is invoked to perform image recognition on the binarized image, and all bright spots in the binarized image are identified as self-healing points; Self-healing parameters are extracted from each of the self-healing points according to the image number.

7. The method according to claim 6, characterized in that, The self-healing parameters include self-healing point density, self-healing point location, self-healing point area, and self-healing point shape factor; The step of extracting self-healing parameters from each of the self-healing points according to the image number includes: According to the image number and the position of each self-healing point in the corresponding binary image, determine the self-healing point position of each self-healing point on the capacitor core. Calculate the self-healing point density corresponding to the capacitor core; The image of the region where each self-healing point is located is gridded according to a preset grid size to determine the number of self-healing point grids. Calculate the area and perimeter of each self-healing point according to the number of self-healing point grids and the grid size; Based on the area and perimeter of the self-healing point, calculate the shape factor of each self-healing point.

8. The method according to claim 7, characterized in that, The step of generating structural adjustment instructions for the capacitor element and issuing them to the capacitor production line according to the self-healing parameter matching structural adjustment rules includes: If the self-healing point density exceeds a preset density threshold, the core gradient thickness is determined according to the electric field distribution of the capacitor core. According to the core gradient thickness, the corresponding evaporation rate and substrate moving speed are matched, and the first structural adjustment instruction of the capacitor element is generated and sent to the capacitor production line. If the number of self-healing points located at both ends of the capacitor core exceeds a concentration threshold, a second structural adjustment instruction for the capacitor element is generated and sent to the capacitor production line to add an electrode thickening layer with a rounded edge at the end of the capacitor core. If the number of self-healing points located in the middle of the capacitor core exceeds the concentration threshold, a third structural adjustment instruction for the capacitor element is generated and sent to the capacitor production line to calibrate the vapor deposition thickness or adjust the vapor deposition metal ratio. If the area of ​​the self-healing point exceeds the area threshold, and the deviation between the shape factor of the self-healing point and the standard shape factor is greater than the preset shape factor threshold, then a fourth structural adjustment instruction for the capacitor element is generated and sent to the capacitor production line to reduce the thickness of the vapor-deposited metal layer of the capacitor core according to a preset thickness gradient.

9. A capacitor element structure adjustment device based on self-healing point identification, characterized in that, include: The end-face cutting module is used to cut off the end face of the capacitor element to obtain the capacitor core; The core moving module is used to move the capacitor core onto the disassembly assembly and fix it in place; The thin film image acquisition module is used to disassemble the capacitor core using the disassembly component and periodically acquire images of the metallized thin film during the disassembly process. The self-healing parameter extraction module is used to perform binarization processing on each of the metallized thin film images, identify all self-healing points from the binarized images, and extract the self-healing parameters. The adjustment instruction issuing module is used to generate structural adjustment instructions for the capacitor element according to the self-healing parameter matching structural adjustment rules and issue them to the capacitor production line.

10. An electronic device, characterized in that, The device includes a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the processor causes the processor to perform the steps of the capacitor element structure adjustment method based on self-healing point identification as described in any one of claims 1-8.

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