Power module and preparation method

Abstract

The invention discloses a power module and a preparation method, the module comprises two circuit structures which are connected in parallel and have the same structure, and each circuit structure comprises a ceramic layer, an upper bridge power device and a lower bridge power device; the upper bridge power device comprises an upper bridge copper base and an upper bridge MOS tube. The lower bridge power device comprises a lower bridge copper base and a lower bridge MOS tube. A first copper layer is arranged on the upper surface of the ceramic layer, and a second copper layer is arranged on the lower surface of the ceramic layer; the first copper layer forms a power supply anode and an output electrode; the upper bridge copper seat is arranged on one surface, far away from the ceramic layer, of the power supply anode, and the upper bridge MOS tube is connected with the upper bridge copper seat; the lower bridge copper seat is arranged on one surface far away from the output electrode and far away from the ceramic layer, and the lower bridge MOS tube is connected with the lower bridge copper seat; the lower bridge MOS tube is provided with a copper sheet, and the copper sheet forms the negative electrode of the power supply, so that the current bearing capability can be enhanced. Through a circuit parallel connection structure, the number of current paths is increased, and reduction of parasitic inductance is achieved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of new energy, in particular to a power module and a preparation method. BACKGROUND

[0002] In a new energy electric drive half-bridge including but not limited to a new energy vehicle, during a high-frequency switching process of a power module (such as an IGBT or a SiC MOSFET), a parasitic inductance and a junction capacitance of the power module form an LC oscillation, resulting in an extremely high voltage spike at a switching moment, which not only may exceed a withstand voltage limit of the power module, causing breakdown damage, but also increases switching loss; meanwhile, electromagnetic interference (EMI) caused by the parasitic inductance may interfere with normal work of a surrounding circuit, affecting stability of a control system in which the power module is located. Therefore, the parasitic inductance (stray inductance) is a key control parameter.

[0003] However, in a structure using a binding wire and an AMB in the prior art, the binding wire is used to connect a chip electrode and a circuit on an AMB substrate by a metal wire to realize electrical conduction, and the AMB substrate is composed of a ceramic layer and a metal layer to provide electrical isolation and a heat dissipation path for the power module; since the binding wire itself has a certain length, and a mutual inductance exists among multiple binding wires under high frequency, in addition, a current path is relatively long due to a circuit layout of the AMB substrate, so that overall loop inductance is increased, and then the parasitic inductance is relatively large.

[0004] Therefore, there is an urgent need for a structure of a power module for reducing the parasitic inductance. SUMMARY

[0005] In order to overcome the deficiencies of the prior art, the purpose of the present application is to provide a power module and a preparation method, which increase a number of current paths by a structure of circuit parallel connection, and realize reduction of the parasitic inductance.

[0006] In order to solve the above problems, the present application is implemented according to the following scheme:

[0007] A power module is provided, which comprises: two parallel and identical circuit structures, the circuit structure comprising a ceramic layer, an upper bridge power device and a lower bridge power device; the upper bridge power device comprising an upper bridge copper base and an upper bridge MOS tube; the lower bridge power device comprising a lower bridge copper base and a lower bridge MOS tube;

[0008] The upper surface of the ceramic layer is provided with a first copper layer, and the lower surface of the ceramic layer is provided with a second copper layer; the first copper layer constitutes a positive electrode of a power supply and an output electrode;

[0009] The upper bridge copper base is arranged on a surface of the power supply positive electrode away from the ceramic layer, and the upper bridge MOS tube is connected with the upper bridge copper base through sintering.

[0010] Compared with the prior art, the power module has the following advantages: the total current is distributed to each independent branch through the two-parallel circuit structure, according to the inductance parallel principle, with the increase of the number of parallel branches, the parasitic inductance is significantly reduced; and the carrying current capacity can be enhanced by the copper sheet constituting the power supply negative electrode.

[0011] Optionally, the copper sheet constituting the power supply negative electrode has a trapezoidal structure.

[0012] Optionally, a side surface of the power supply positive electrode close to the output electrode is taken as a first side surface, and a side surface of the power supply negative electrode close to the power supply positive electrode is taken as a second side surface, the distance between the first side surface and the output electrode is less than the distance between the second side surface and the output electrode.

[0013] Optionally, the first liquid cooling plate is connected with a surface of the power supply negative electrode away from the lower bridge MOS tube through a heat-conducting pad, and the second liquid cooling plate is connected with a surface of the second copper layer away from the ceramic layer.

[0014] Optionally, a third copper layer, a fourth copper layer and a fifth copper layer are sequentially stacked on a surface of the first copper layer away from the ceramic layer; the output electrode is connected with the third copper layer, the fourth copper layer is connected with the third copper layer and the fifth copper layer, and the fifth copper layer is connected with the power supply negative electrode.

[0015] The power supply positive electrode is the drain electrode of the upper bridge MOS tube, and the third copper layer and the fourth copper layer are the source electrode of the upper bridge MOS tube; the output electrode is the drain electrode of the lower bridge MOS tube, and the fourth copper layer and the fifth copper layer are the source electrode of the lower bridge MOS tube.

[0016] A preparation method of a power module is also provided, which is used for preparing the power module and includes the following steps:

[0017] Step 1: a ceramic layer is arranged, and the ceramic layer is double-sided copper-clad on the upper and lower surfaces to obtain a first copper layer on the upper surface of the ceramic layer and a second copper layer on the lower surface of the ceramic layer;

[0018] Step 2: the first copper layer is etched to obtain a power supply positive electrode and an output electrode, and an upper bridge copper base is welded on the power supply positive electrode and a lower bridge copper base is welded on the output electrode through sintering.

[0019] Step 3: sequentially laminating the polymer material and the copper layer, and electroplating and etching the copper layer to obtain a third copper layer and a via connecting the third copper layer and the output pole;

[0020] Step 4: repeating the above step 3 to obtain a fourth copper layer, a via connecting the fourth copper layer and the third copper layer, a via connecting the fourth copper layer and the upper bridge copper base, a fifth copper layer, and a via connecting the fifth copper layer and the fourth copper layer, respectively.

[0021] Step 5: welding a trapezoidal copper sheet to the fifth copper layer by sintering, and the copper sheet constitutes a power negative pole.

[0022] Optionally, before the step 5, further comprising: laminating ink on a surface of the fifth copper layer away from the fourth copper layer.

[0023] Optionally, sequentially laminating the polymer material and the copper layer comprises:

[0024] determining a height of the power positive pole and the upper bridge copper base, or the output pole and the lower bridge copper base along a preparation direction;

[0025] selecting a polymer material higher than the height, and slotting the polymer material by laser to obtain a slot embedding the power positive pole and the upper bridge copper base, or the output pole and the lower bridge copper base.

[0026] lamination is performed on the polymer material after slotting, and the copper layer is laminated on a surface of the polymer material away from the ceramic layer.

[0027] Optionally, the polymer material comprises at least one of PP and ABF.

[0028] Optionally, further comprising:

[0029] Step 6: connecting a first liquid cooling plate to a surface of the power negative pole away from the fifth copper layer through a heat-conducting pad, and connecting a second liquid cooling plate to a surface of the second copper layer away from the ceramic layer through sintering or welding; the heat-conducting pad has adhesion; and double-sided heat dissipation is achieved through the first liquid cooling plate and the second liquid cooling plate. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 is a slice of the embodiment one of the present application Figure 1 ;

[0031] Figure 2 is a slice of the embodiment one of the present application Figure 2 ;

[0032] Figure 3 is a slice of the embodiment one of the present applicationFigure 3 ;

[0033] Figure 4 The wiring diagram of the embodiment one of the application;

[0034] Figure 5 The equivalent circuit diagram of the embodiment one of the application;

[0035] Figure 6 The equivalent position structure diagram of the positive electrode and the negative electrode of the embodiment one of the application;

[0036] Figure 7 The slice diagram of the embodiment two of the application;

[0037] The figure mark explanation, 1, ceramic layer; 2, upper bridge power device; 201, upper bridge copper base; 202, upper bridge MOS tube; 2021, the source of upper bridge MOS tube; 2022, the gate of upper bridge MOS tube; 2023, the drain of upper bridge MOS tube; 3, lower bridge power device; 301, lower bridge copper base; 302, lower bridge MOS tube; 3021, the source of lower bridge MOS tube; 3022, the gate of lower bridge MOS tube; 3023, the drain of lower bridge MOS tube; 4, first copper layer; 401, power positive pole; 4011, first side face; 402, output pole; 5, second copper layer; 6, third copper layer; 7, fourth copper layer; 8, fifth copper layer; 9, power negative pole; 901, second side face; 10, first liquid cooling plate; 11, heat-conducting pad; 12, second liquid cooling plate; 13, via hole; 14, ink. DETAILED DESCRIPTION

[0038] The preferred embodiments of the present application will be described herein below with reference to the drawings; it should be understood that the preferred embodiments described herein are merely intended to describe and explain the present application, and are not intended to limit the present application.

[0039] The following description refers to the accompanying drawings. In the following description, same numbers in different drawings represent the same or similar elements unless otherwise represented. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of apparatuses and methods consistent with some aspects of the present application as detailed in the appended claims. In the description of the present application, it should be understood that the terms "first", "second", "third", etc. are merely used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence, nor can they be understood as indicating or implying relative importance. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0040] Embodiment one

[0041] Referring to Figures 1-4 The embodiment disclosed by the present application discloses a power module, comprising:

[0042] Two parallel circuits with identical structures are provided. Each circuit structure includes a ceramic layer 1, an upper bridge power device 2, and a lower bridge power device 3. The upper bridge power device 2 includes an upper bridge copper base 201 and an upper bridge MOSFET 202. The lower bridge power device 3 includes a lower bridge copper base 301 and a lower bridge MOSFET 302.

[0043] A first copper layer 4 is provided on the upper surface of ceramic layer 1, and a second copper layer 5 is provided on the lower surface of ceramic layer 1; the first copper layer 4 constitutes the positive terminal 401 and the output terminal 402 of the power supply; the upper bridge copper base 201 is provided on the surface of the positive terminal 401 away from ceramic layer 1, and the upper bridge MOSFET 202 is connected to the upper bridge copper base 201 by sintering; the lower bridge copper base 301 is provided on the surface away from the output terminal 402 and away from ceramic layer 1, and the lower bridge MOSFET 302 is connected to the lower bridge copper base 301 by sintering; the lower bridge MOSFET 302 is provided with copper plates, which constitute the negative terminal 9 of the power supply and can enhance the current carrying capacity.

[0044] This embodiment uses a two-way parallel circuit structure to distribute the total current to each independent branch. The parasitic inductance of each branch can be regarded as multiple inductor elements connected in parallel. According to the principle of parallel inductance, the parasitic inductance will decrease significantly as the number of parallel branches increases.

[0045] In this embodiment, the copper sheet constituting the negative power supply 9 has a trapezoidal structure. By using the trapezoidal copper sheet as the negative power supply 9, the position of the part of the negative power supply 9 near the lower bridge MOSFET 302 is higher than the surface of the lower bridge MOSFET 302 near the negative power supply 9. This partial elevation of the negative power supply 9 increases the spatial distance between the negative power supply 9 and the output electrode 402, reduces the parasitic capacitance between the output electrode 402 and the negative power supply 9, and thus reduces the overall parasitic capacitance of the power module.

[0046] In this embodiment, the side of the positive power supply 401 closest to the output terminal 402 is designated as the first side 4011, and the side of the negative power supply 9 closest to the positive power supply 401 is designated as the second side 901. The distance between the first side 4011 and the output terminal 402 is less than the distance between the second side 901 and the output terminal 402. When the negative power supply 9 (second side 901) extends beyond the edge of the positive power supply 401 (first side 4011), the current path between the positive and negative terminals becomes closer and more symmetrical, allowing the magnetic field generated by the positive power supply 401 to cancel out the magnetic field of the parallel negative power supply 9, thereby reducing the equivalent inductance and thus reducing the overall parasitic inductance of the power module.

[0047] In this embodiment, the third copper layer 6, the fourth copper layer 7 and the fifth copper layer 8 are sequentially stacked away from one surface of the ceramic layer 1 of the first copper layer 4; the output pole 402 is connected with the third copper layer 6, the fourth copper layer 7 is connected with the third copper layer 6 and the fifth copper layer 8, and the fifth copper layer 8 is connected with the negative pole 9 of the power supply; the positive pole 401 of the power supply is the drain 2023 of the upper bridge MOS tube, the third copper layer 6 and the fourth copper layer 7 are the source 2021 of the upper bridge MOS tube; the output pole 402 is the drain 3023 of the lower bridge MOS tube, and the fourth copper layer 7 and the fifth copper layer 8 are the source 3021 of the lower bridge MOS tube.

[0048] Referring to Figure 5 As shown in the equivalent circuit diagram of the present embodiment, the drain 2023 of the upper bridge MOS tube is connected with the positive pole 401 of the power supply, the output pole 402 is connected with the source 2021 of the upper bridge MOS tube and the drain 3023 of the lower bridge MOS tube, the source 3021 of the lower bridge MOS tube is connected with the negative pole 9 of the power supply, the gate 2022 of the upper bridge MOS tube and the gate 3022 of the lower bridge MOS tube are respectively connected with a bias voltage, and by controlling the bias voltage, the switching of the upper bridge MOS tube 202 and the lower bridge MOS tube 302 can be controlled.

[0049] In the equivalent circuit diagram, two current loops of "the positive pole 401 of the power supply→the drain 2023 of the upper bridge MOS tube→the source 2021 of the upper bridge MOS tube→the output pole 402" and "the output pole 402→the drain 3023 of the lower bridge MOS tube→the source 3021 of the lower bridge MOS tube→the negative pole 9 of the power supply" are formed, and the gate 2022 of the upper bridge MOS tube and the gate 3022 of the lower bridge MOS tube do not play a key role in the current loop, so in the cross-sectional view Figures 1-3 As shown in the cross-sectional view, only the source 2021 of the upper bridge MOS tube, the drain 2023 of the upper bridge MOS tube, the source 3021 of the lower bridge MOS tube and the drain 3023 of the lower bridge MOS tube are shown, and the gate 2022 of the upper bridge MOS tube and the gate 3022 of the lower bridge MOS tube are not shown, so as to directly show the connection relationship between the source 2021 of the upper bridge MOS tube, the drain 2023 of the upper bridge MOS tube, the source 3021 of the lower bridge MOS tube, the drain 3023 of the lower bridge MOS tube and the rest of the structure.

[0050] Referring to Figure 6As shown, the equivalent position structure diagram of the power supply positive pole 401 and the power supply negative pole 9 is shown, by arranging the power supply negative pole 9 and the power supply positive pole 401 in up and down, the current path of the power supply positive pole 401 and the power supply negative pole 9 is closer in the vertical direction, the coupling is closer, the magnetic field generated in the opposite direction of the current can be greatly offset, according to the correlation characteristics of inductance and magnetic field energy, the magnetic field offset can significantly reduce the equivalent parasitic inductance of the loop, compared with the structure that the power supply positive pole 401 and the power supply negative pole 9 are arranged on the left and right, the distance between the power supply positive pole 401 and the power supply negative pole 9 is larger and the space distribution is dispersed, the magnetic field offset effect is weak, the loop area formed by the current path is larger, so that the parasitic inductance is relatively higher, therefore, the parasitic inductance of the structure arranged in up and down of the present application is smaller.

[0051] Embodiment two

[0052] Reference Figure 7 As shown, the difference between the present embodiment and embodiment one is only that the power module further comprises a first liquid cooling plate 10 and a second liquid cooling plate 12 for heat dissipation, the first liquid cooling plate 10 is connected with a surface of the power supply negative pole 9 away from the lower bridge MOS tube 302 through a heat-conducting pad 11, and the second liquid cooling plate 12 is connected with a surface of the second copper layer 5 away from the ceramic layer 1, so as to form double-sided heat dissipation through the first liquid cooling plate 10 and the second liquid cooling plate 12, and realize better heat dissipation effect.

[0053] In this embodiment, the heat-conducting pad 11 is a heat-conducting pad 11 with double-sided adhesion and insulating heat dissipation effect, so as to bond the first liquid cooling plate 10 and the power supply negative pole 9, avoid short circuit of the power supply negative pole 9 and the first liquid cooling plate 10, cause circuit failure, and transfer the heat generated by the power supply negative pole 9 to the first liquid cooling plate 10 through the heat-conducting pad 11, so as to dissipate the heat through the first liquid cooling plate 10, and realize good heat dissipation effect.

[0054] Embodiment three

[0055] The present embodiment discloses a preparation method of a power module, which is used for preparing the power module of the above-mentioned embodiment one, and comprises the following steps:

[0056] Step 1: a ceramic layer 1 is arranged, the ceramic layer 1 is double-sidedly coated with copper on the upper and lower surfaces to obtain a first copper layer 4 located on the upper surface of the ceramic layer 1 and a second copper layer 5 located on the lower surface of the ceramic layer 1;

[0057] Step 2: the first copper layer 4 is etched to obtain a power supply positive pole 401 and an output pole 402, and the upper bridge copper seat 201 is welded to the power supply positive pole 401 and the lower bridge copper seat 301 is welded to the output pole 402 through sintering;

[0058] Step 3: the high polymer material and the copper layer are sequentially compressed, and the copper layer is etched to obtain a third copper layer 6 and a via hole 13 connected between the third copper layer 6 and the output pole 402;

[0059] Step 4: Repeat Step 3 above to obtain the fourth copper layer 7, the via 13 connecting the fourth copper layer 7 and the third copper layer 6, the via 13 connecting the fourth copper layer 7 and the upper bridge copper seat 201, the fifth copper layer 8, and the via 13 connecting the fifth copper layer 8 and the fourth copper layer 7, respectively. Through the multiple vias between the source and the drain of the MOS tube, the parallel connection of the multiple inductors is formed, so that the parasitic inductance of the power module of the present application is significantly smaller than that of the traditional bonding line structure.

[0060] Step 5: The copper sheet in the trapezoidal structure is welded to the fifth copper layer 8 by sintering to form the power negative electrode 9 to enhance the current carrying capacity.

[0061] In this embodiment, before Step 5, it further includes: pressing the ink 14 on a surface of the fifth copper layer 8 away from the fourth copper layer 7 to play an insulating protection role on the fifth copper layer 8, so as to avoid unnecessary electrical conduction between the copper sheet (power negative electrode 9) and the non-connection area of the fifth copper layer 8 when welding the trapezoidal copper sheet (power negative electrode 9), and ensure the stability and reliability of the internal circuit connection of the power module.

[0062] In this embodiment, the high polymer material and the copper layer are pressed in sequence, including:

[0063] The height of the power positive electrode 401 and the upper bridge copper seat 201, or the output pole 402 and the lower bridge copper seat 301 along the preparation direction is determined; then a high polymer material higher than the height of the power positive electrode 401 and the upper bridge copper seat 201, or the output pole 402 and the lower bridge copper seat 301 along the preparation direction is selected, the high polymer material is slotted by laser to obtain a slot for embedding the power positive electrode 401 and the upper bridge copper seat 201, or the output pole 402 and the lower bridge copper seat 301, so as to ensure that the high polymer material layer after pressing is higher than the upper bridge copper seat 201 or the lower bridge copper seat 301; finally, the high polymer material after slotting is pressed, and a copper layer is pressed on a surface of the high polymer material away from the ceramic layer 1.

[0064] In this embodiment, the high polymer material includes at least one of PP and ABF.

[0065] Embodiment Four

[0066] This embodiment is used to prepare the power module of the above-mentioned embodiment two, and the difference from the embodiment three is that the preparation method further includes:

[0067] Step 6: The power negative electrode 9 is connected to the first liquid cooling plate 10 through the heat-conducting pad 11 on a surface of the power negative electrode 9 away from the fifth copper layer 8, and the second liquid cooling plate 12 is connected to the second copper layer 5 through sintering or welding on a surface of the second copper layer 5 away from the ceramic layer 1; the heat-conducting pad 11 has adhesion; and double-sided heat dissipation is realized through the first liquid cooling plate 10 and the second liquid cooling plate 12.

[0068] In this embodiment, the heat-conducting pad 11 is a heat-conducting pad 11 with double-sided adhesion and insulating heat-dissipation effect, so as to bond the first liquid cooling plate 10 and the power supply negative electrode 9, avoid short circuit between the power supply negative electrode 9 and the first liquid cooling plate 10, cause circuit failure, and transfer the heat generated by the power supply negative electrode 9 to the first liquid cooling plate 10 through the heat-conducting pad 11, so as to dissipate the heat through the first liquid cooling plate 10, and achieve good heat-dissipation effect.

[0069] The above only is the preferred embodiment of the present application, and does not limit the present application, and any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A power module, characterized in that, include: A circuit structure with two parallel and identical components, comprising a ceramic layer, an upper bridge power device, and a lower bridge power device; the upper bridge power device comprises an upper bridge copper base and an upper bridge MOSFET; the lower bridge power device comprises a lower bridge copper base and a lower bridge MOSFET. The upper surface of the ceramic layer is provided with a first copper layer, and the lower surface of the ceramic layer is provided with a second copper layer; the first copper layer constitutes the positive terminal and the output terminal of the power supply. The upper bridge copper base is located on a surface of the power supply positive terminal away from the ceramic layer, and the upper bridge MOSFET is connected to the upper bridge copper base; the lower bridge copper base is located on a surface of the power supply negative terminal away from the output terminal and away from the ceramic layer, and the lower bridge MOSFET is connected to the lower bridge copper base; the lower bridge MOSFET has a copper plate, and the copper plate constitutes the power supply negative terminal.

2. A power module according to claim 1, characterized in that, The copper sheet constituting the negative terminal of the power supply has a trapezoidal structure.

3. A power module according to claim 1, characterized in that, The side of the positive terminal of the power supply that is close to the output terminal is designated as the first side, and the side of the negative terminal of the power supply that is close to the positive terminal of the power supply is designated as the second side. The distance between the first side and the output terminal is less than the distance between the second side and the output terminal.

4. A power module according to claim 1, characterized in that, It also includes a first liquid cooling plate and a second liquid cooling plate for heat dissipation. The first liquid cooling plate is connected to the surface of the power supply negative terminal away from the lower bridge MOSFET via a thermal pad. The second liquid cooling plate is connected to the surface of the second copper layer away from the ceramic layer.

5. A power module according to claim 1, characterized in that, A third copper layer, a fourth copper layer, and a fifth copper layer are sequentially stacked on the surface of the first copper layer away from the ceramic layer; the output electrode is connected to the third copper layer, the fourth copper layer is connected to the third copper layer and the fifth copper layer, and the fifth copper layer is connected to the negative terminal of the power supply. The positive terminal of the power supply is the drain of the upper bridge MOSFET, and the third and fourth copper layers are the sources of the upper bridge MOSFET; the output terminal is the drain of the lower bridge MOSFET, and the fourth and fifth copper layers are the sources of the lower bridge MOSFET.

6. A method for manufacturing a power module, used to manufacture the power module according to claims 1-5, characterized in that, include: Step 1: Set a ceramic layer, and perform double-sided copper plating on the upper and lower surfaces of the ceramic layer to obtain a first copper layer on the upper surface of the ceramic layer and a second copper layer on the lower surface of the ceramic layer; Step 2: Etch the first copper layer to obtain the power supply positive terminal and the output terminal. Then, sinter the upper bridge copper base to the power supply positive terminal and the lower bridge copper base to the output terminal. Step 3: Sequentially press the polymer material and the copper layer together, and electroplate and etch the copper layer to obtain a third copper layer and a via connecting the third copper layer to the output electrode; Step 4: Repeat step 3 above to obtain the fourth copper layer, the via connecting the fourth copper layer and the third copper layer, the via connecting the fourth copper layer and the upper bridge copper base, the fifth copper layer, and the via connecting the fifth copper layer and the fourth copper layer. Step 5: The trapezoidal copper sheet is welded to the fifth copper layer by sintering, and the copper sheet forms the negative electrode of the power supply.

7. The method for preparing a power module according to claim 6, characterized in that, Before step 5, the process further includes: pressing ink onto a surface of the fifth copper layer away from the fourth copper layer.

8. The method for manufacturing a power module according to claim 6, characterized in that, The process involves sequentially laminating a polymer material and a copper layer, including: Determine the height of the positive terminal of the power supply and the upper bridge copper base, or the height of the output terminal and the lower bridge copper base along the manufacturing direction; A polymer material higher than the specified height is selected, and a groove is created in the polymer material using a laser to obtain a groove that is embedded between the positive electrode of the power supply and the upper bridge copper base, and between the output electrode and the lower bridge copper base; The grooved polymer material is pressed together, and the copper layer is pressed onto the surface of the pressed polymer material away from the ceramic layer.

9. A method for manufacturing a power module according to claim 6, characterized in that, The polymeric material includes at least one of PP and ABF.

10. A method for manufacturing a power module according to claim 6, characterized in that, Also includes: Step 6: The surface of the power supply negative terminal away from the fifth copper layer is connected to the first liquid cooling plate via a thermal pad, and the surface of the second copper layer away from the ceramic layer is connected to the second liquid cooling plate via sintering or welding; the thermal pad is adhesive; double-sided heat dissipation is achieved through the first liquid cooling plate and the second liquid cooling plate.

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