Semiconductor wafer cutting apparatus and method

Abstract

The application discloses a kind of semiconductor wafer cutting equipment and method thereof, it is related to wafer cutting technical field, the semiconductor wafer cutting equipment, including protective shell, the inside of the protective shell is provided with crystal bar support component and cutting component, crystal bar support component is located above cutting component, cutting fluid supply device is further provided in the protective shell, the cutting fluid supply device is used to carry out fluid supply to crystal bar cutting site, the cutting fluid supply device is installed between crystal bar support component and cutting component, diamond solidification mechanism is provided on the cutting component, the diamond solidification mechanism is used to supplement diamond particles on diamond steel wire and solidifies diamond particles, diamond particle slurry is filled with the material that is cured quickly by ultraviolet light, so diamond particle slurry can be cured quickly by photo-curing lamp irradiation, to prevent cutting fluid from flushing away diamond particles as far as possible.

Description

A semiconductor wafer dicing apparatus and method

[0001] This application is a divisional application of application filed on March 28, 2025, with application number 202510380612.6 and invention title "A Semiconductor Wafer Cutting Equipment and Method Thereof". Technical Field

[0002] This invention relates to the field of wafer dicing technology, and more specifically to a semiconductor wafer dicing apparatus and method. Background Technology

[0003] In the semiconductor manufacturing industry, wafer dicing is a crucial process step, aiming to cut large-sized ingots into thin wafers for subsequent processing and manufacturing. With the development of semiconductor materials, especially the widespread application of hard materials such as silicon carbide (SiC), traditional dicing techniques face increasing challenges. SiC has a Mohs hardness of 9.2, approaching that of diamond, making it difficult for traditional dicing tools and methods to complete dicing tasks efficiently and accurately.

[0004] Currently, diamond wire cutting is one of the main methods for cutting high-hardness materials. Diamond wire cutting involves embedding diamond particles in a steel wire and using high-speed reciprocating motion to cut a crystal ingot. However, in practice, diamond particles are prone to detachment during high-speed cutting, causing changes in the cutting capability and diameter of the wire, thus affecting the cutting quality, such as the flatness, curvature, and warpage of the wafer. Furthermore, the heat generated during cutting can also adversely affect cutting quality and equipment lifespan. Summary of the Invention

[0005] This invention provides a semiconductor wafer dicing apparatus and method, which aims to solve the problems mentioned in the prior art.

[0006] To achieve the above objectives, the present invention provides the following technical solution:

[0007] A semiconductor wafer dicing device includes a protective housing. Inside the protective housing are a crystal ingot support assembly and a dicing assembly, with the crystal ingot support assembly located above the dicing assembly. The protective housing also includes a dicing fluid supply device for supplying fluid to the crystal ingot dicing area. The dicing fluid supply device is installed between the crystal ingot support assembly and the dicing assembly. The dicing assembly is equipped with a diamond curing mechanism for adding diamond particles to diamond wires and curing the diamond particles.

[0008] As an optional solution of the semiconductor wafer dicing equipment of the present invention, the ingot support assembly includes a lifting assembly installed at the top of the protective housing. The lifting assembly is used to control the lifting of the ingot support assembly. The ingot support assembly also includes a mounting base. A mounting groove is provided in the upper center of the mounting base, and four sets of guide posts are slidably arranged around the mounting base. The upper ends of the four sets of guide posts are installed at the top of the protective housing.

[0009] The lifting assembly includes a hydraulic cylinder mounted on the top of the protective housing, with the lower telescopic end of the hydraulic cylinder mounted in a mounting groove above the mounting base;

[0010] A limiting groove is provided below the mounting base, and a dovetail seat is slidably disposed in the limiting groove. The dovetail seat includes a T-shaped metal seat, which is slidably installed in the limiting groove. The two sides of the metal seat are limited by limiting blocks. A fixing groove for fixing the crystal rod is provided below the metal seat. A threaded screw is threadedly connected to the side of the metal seat. One end of the threaded screw is connected to a clamping block, and the other end of the threaded screw is provided with a rotating handle.

[0011] As an optional embodiment of the semiconductor wafer dicing equipment of the present invention, the dicing assembly includes two sets of parallel rollers, and the rollers are uniformly provided with wire grooves. The rollers are provided with take-up wheels and pay-off wheels on both sides, and diamond wire is wound around the take-up wheels, pay-off wheels and wire grooves of the rollers.

[0012] As an optional embodiment of the semiconductor wafer dicing equipment of the present invention, the dicing fluid supply device includes a supply tank, the outlet end of the supply tank is connected to a supply pipe, the other end of the supply pipe is connected to a supply tray, and the side of the supply tray is provided with a liquid outlet, which supplies fluid toward the contact surface between the diamond wire and the crystal rod.

[0013] As an optional embodiment of the semiconductor wafer dicing equipment of the present invention, the diamond curing mechanism includes a rectangular box covering the outer side of the upper diamond wire. The rectangular box includes a feeding area and a curing area. The rectangular box has wire-passing holes evenly distributed on the side of the feeding area. The wire-passing holes are inclined holes, and the hole spacing at the end of the wire-passing hole closer to the crystal rod is greater than the hole spacing at the other end. A storage chamber is provided above the wire-passing holes in the feeding area. The storage chamber is filled with diamond particle slurry. A feeding channel is provided through the storage chamber and the wire-passing holes. A light curing lamp is installed around the curing area. The light curing lamp is used to cure the diamond particle slurry on the diamond wire.

[0014] As an optional solution of the semiconductor wafer dicing equipment of the present invention, a pressing control mechanism is provided in the feeding channel. The pressing control mechanism includes an insert tube that is slidably disposed in the feeding channel. A plug cap is connected to the upper part of the feeding channel by a support rod. The plug cap matches the upper end of the insert tube. The lower end of the insert tube is connected to a feeding ring. A discharge hole is opened in the inner ring of the feeding ring. The diamond wire passes through the feeding ring.

[0015] As an optional solution of the semiconductor wafer dicing equipment of the present invention, a scraper assembly is provided at one end of the wire-passing hole. The scraper assembly includes a fixing plate disposed in the wire-passing hole. Springs are connected to both sides of the fixing plate. The other end of the springs is connected to the upper and lower sides of the feeding area located in the wire-passing hole. An installation hole is opened in the middle of the fixing plate. A scraper is installed in the installation hole. The scraper is disposed below the diamond wire.

[0016] A cutting method for a semiconductor wafer dicing equipment, the cutting process is as follows:

[0017] a. Replace the rollers on the cutting machine with rollers that have a groove pitch of 0.45mm-0.55mm;

[0018] b. Wind 0.10mm-0.14mm diamond wire into the roller groove and adjust the tension to distribute the tension evenly on the wire mesh;

[0019] c. Prepare a solution with a density of 0.8 kg / m³ 3 -1.2kg / m 3 The diamond slurry is added to the cutting fluid supply device of the equipment and circulated evenly;

[0020] d. Place the 6-8 inch crystal rods to be cut on the machine. Attach the crystal rods to the dovetail holders with the crystal rods facing down on the dovetail holders and load them into the cutting chamber of the equipment.

[0021] e. Wrap the diamond wire around the diamond curing mechanism;

[0022] f. Set the cutting parameters according to the cross-sectional area and length of the crystal rod, such as the amount of wire used per piece, cutting time, slurry flow rate, slurry temperature, wire tension, feed speed, feed position, and wire speed.

[0023] g. Start cutting, and monitor the mortar temperature, cutting flow rate and crystal rod wire bow during the cutting process;

[0024] h. After cutting is completed, the slowly rising cutting chamber lowering device lifts the dovetail seat and the cut wafer off the wire mesh;

[0025] i. Remove the diced wafers from the machine, remove the adhesive, and collect the wafers. Pay attention to the identification of the C / Si side of the SiC diced wafers.

[0026] As an optional process of the semiconductor wafer dicing equipment of the present invention, the preparation process of the diamond particle slurry filled in the diamond curing mechanism is as follows:

[0027] Step 1: Measure the required amounts of prepolymer, reactive diluent, and photoinitiator into a mixing tank according to the proportions, and then stir thoroughly;

[0028] Step 2: Add the required diamond particles to the mixing tank and mix them thoroughly with the prepolymer, reactive diluent, and photoinitiator;

[0029] Step 3: Stir and mix thoroughly for 36 hours to ensure that the diamond particles are evenly dispersed in the prepolymer, reactive diluent, and photoinitiator, thus guaranteeing the quality of subsequent cutting;

[0030] Step 4: Pour the mixed diamond particle slurry into the storage chamber to replenish the diamond wire with diamond particles.

[0031] The technical effects and advantages of this invention are as follows:

[0032] 1. By incorporating a diamond curing mechanism into the cutting assembly, diamond particles can be replenished to the diamond wire in real time, and these particles can be rapidly cured. Specifically, the diamond curing mechanism includes a feeding area and a curing area. The feeding area uniformly coats the diamond particle slurry onto the diamond wire through a feeding channel, while the curing area rapidly cures the slurry using a light-curing lamp. This design effectively solves the problem of diamond particles easily detaching during high-speed cutting, ensuring consistent cutting capability at both the inlet and outlet ends of the diamond wire, thereby significantly improving cutting stability. Simultaneously, the cured diamond particles firmly adhere to the diamond wire, reducing wire diameter deviation caused by particle detachment, further improving the flatness, curvature, and warpage of the cut wafer, meeting the requirements of high-precision cutting.

[0033] 2. In this case, during the cutting process, steel wire is nickel-plated and inlaid with diamond particles. High-speed rotation of the take-up and untake-down rollers drives the steel wire to reciprocate at high speed, cutting the crystal rod into slices. However, due to the Mohs hardness of SiC and diamond, the diamond particles embedded in the steel wire are easily dislodged during high-speed cutting. This leads to deviations in the cutting ability of the diamond wire and the diameter of the steel wire at the inlet and outlet ends, making it difficult to control the flatness, curvature, and warpage of the product. During the crystal rod cutting process, the contact point between the crystal rod and the diamond wire is pressed, causing the diamond wire to be tilted on both sides. Furthermore, during the crystal rod cutting process, the diamond particles embedded in the steel wire... Diamond particles on the wire may fall off, affecting subsequent cutting. In this application, the diamond wire passes through the threading hole of the rectangular box. Since the threading hole is set at an angle, it is convenient for the diamond wire to pass through. Diamond particle slurry is stored in the storage chamber. Due to gravity, the diamond particle slurry flows into the threading hole through the feeding channel. During the cutting of the crystal rod, the diamond wire moves downward at an angle, which will press the feeding ring. The feeding ring is connected to the insertion tube, which can drive the insertion tube to move downward. As the insertion tube moves downward, the opening at the top of the insertion tube falls out from the plug cap, allowing the diamond particle slurry to flow into the insertion tube and the feeding ring. The feeding ring can coat the diamond wire with the diamond particle slurry.

[0034] 3. In this case, after the diamond wire is coated with diamond particle paste, the diamond particle paste is in a fluid state. After the diamond wire is cut with the crystal rod and washed by the cutting fluid, the diamond particle paste is easy to fall off the diamond wire. Therefore, it is necessary to quickly cure the diamond particle paste to fix it on the diamond wire. The diamond particle paste is filled with a material that can be quickly cured by light. Therefore, the diamond particle paste can be quickly cured by light curing lamp to prevent the cutting fluid from washing away the diamond particles.

[0035] 4. The cutting fluid supply device is installed between the ingot support assembly and the cutting assembly, directly supplying fluid to the contact surface between the diamond wire and the ingot for precise cooling. The ingot support assembly, through the cooperation of the lifting assembly and the dovetail seat, stably fixes the ingot and controls its downward movement, ensuring that the contact position between the ingot and the diamond wire is always in the optimal cooling zone during the cutting process. This structural design not only effectively reduces the high temperatures generated by friction during cutting, avoiding material thermal damage and equipment overheating, but also improves cooling efficiency and reduces resource waste through the recycling of the cutting fluid. Furthermore, the uniform supply of cutting fluid further ensures the stability of the cutting process, extends the service life of the diamond wire, and reduces equipment maintenance costs. Attached Figure Description

[0036] Figure 1 is a schematic diagram of the structure of the present invention;

[0037] Figure 2 is a partial structural schematic diagram of the present invention;

[0038] Figure 3 is a schematic diagram of the crystal rod support assembly and cutting assembly of the present invention;

[0039] Figure 4 is a front view of the crystal rod support assembly and the cutting assembly of the present invention;

[0040] Figure 5 is a schematic diagram of the liquid supply tray structure of the present invention;

[0041] Figure 6 is a schematic diagram of the diamond solidification mechanism of the present invention;

[0042] Figure 7 is a schematic diagram of the internal cross-sectional structure of the rectangular box body of the present invention;

[0043] Figure 8 is an enlarged structural schematic diagram of point A in Figure 7 of the present invention;

[0044] Figure 9 is a schematic diagram of the diamond wire structure of the present invention.

[0045] Explanation of the labels in the diagram:

[0046] 1. Protective housing; 2. Crystal rod support assembly; 21. Mounting base; 22. Mounting groove; 23. Guide post; 24. Limiting slide; 25. Dovetail seat; 251. Metal seat; 252. Limiting block; 253. Fixing groove; 254. Threaded screw; 255. Clamping block; 256. Rotating handle; 3. Cutting assembly; 31. Roller; 32. Wire groove; 33. Take-up reel; 34. Pay-off reel; 35. Diamond wire; 4. Cutting fluid supply device; 41. Supply tank; 42. Supply pipe; 43. Supply tray; 44. Outlet; 5. Diamond curing mechanism; 51. Rectangular box; 511. Feeding area; 512. Curing area; 513. Wire hole; 514. Storage compartment; 515. Feeding channel; 516. Light curing lamp; 517. Downward control mechanism; 5171. Insert tube; 5172. Support rod; 5173. Plug cap; 519. Feeding ring; 5110. Discharge hole; 5111. Scraper assembly; 5112. Fixing plate; 5113. Spring; 5115. Mounting hole; 5116. Scraper; 6. Lifting assembly; 61. Hydraulic cylinder; 7. Crystal rod. Detailed Implementation

[0047] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0048] Example 1

[0049] Please refer to Figures 1, 2, 3, and 4. A semiconductor wafer dicing apparatus includes a protective housing 1. Inside the protective housing 1, a crystal rod support assembly 2 and a dicing assembly 3 are disposed. The crystal rod support assembly 2 is located above the dicing assembly 3. A dicing fluid supply device 4 is also disposed inside the protective housing 1. The dicing fluid supply device 4 is used to supply fluid to the crystal rod dicing area. The dicing fluid supply device 4 is installed between the crystal rod support assembly 2 and the dicing assembly 3. A diamond curing mechanism 5 is disposed on the dicing assembly 3. The diamond curing mechanism 5 is used to supplement diamond particles to diamond wires and to cure the diamond particles.

[0050] The crystal rod support assembly 2 can fix the crystal rod and drive the crystal rod to move downward so that the crystal rod contacts the cutting assembly 3, thereby cutting the crystal rod. During the cutting process, in order to prevent the temperature of the cutting contact position from getting too high, the cutting fluid supply device 4 is used to cool the cutting position.

[0051] During the cutting process, diamond particles are embedded in a nickel-plated steel wire. The high-speed rotation of the take-up and release rollers drives the steel wire to reciprocate at high speed, cutting the crystal rod into slices. However, due to the Mohs hardness of 9.2 for SiC material and 10 for diamond, the diamond particles embedded in the steel wire are very easy to fall off during the high-speed cutting process. This leads to deviations in the cutting ability and steel wire diameter at the inlet and outlet ends of the diamond wire 35, making it difficult to control the flatness, curvature, and warpage of the product.

[0052] The diamond curing mechanism 5 can replenish diamond particles onto the diamond wire 35 and also cure the replenished diamond particles onto the diamond wire 35 to prevent them from falling off, thereby greatly improving the stability of subsequent cutting and improving the flatness, curvature and warp of the product.

[0053] Example 2

[0054] Please refer to Figures 1-5. The crystal rod support assembly 2 includes a lifting assembly 6 installed at the top inside the protective housing 1. The lifting assembly 6 is used to control the lifting and lowering of the crystal rod support assembly 2. The crystal rod support assembly 2 also includes a mounting base 21. A mounting groove 22 is provided in the upper center of the mounting base 21, and four sets of guide posts 23 are slidably arranged around the mounting base 21. The upper ends of the four sets of guide posts 23 are installed at the top inside the protective housing 1.

[0055] The lifting assembly 6 includes a hydraulic cylinder 61 mounted on the top of the protective housing 1, with the lower telescopic end of the hydraulic cylinder 61 mounted in the mounting groove 22 above the mounting base 21;

[0056] A limiting groove 24 is provided below the mounting base 21. A dovetail seat 25 is slidably arranged in the limiting groove 24. The dovetail seat 25 includes a T-shaped metal base 251. The metal base 251 is slidably installed in the limiting groove 24. The two sides of the metal base 251 are limited by limiting blocks 252. A fixing groove 253 for fixing the crystal rod 7 is provided below the metal base 251. A threaded screw 254 is threadedly connected to the side of the metal base 251. A clamping block 255 is connected to one end of the threaded screw 254, and a rotating handle 256 is provided at the other end of the threaded screw 254.

[0057] The cutting assembly 3 includes two sets of parallel rollers 31, and the rollers 31 are evenly provided with wire grooves 32. The rollers 31 are provided with take-up reels 33 and pay-off reels 34 on both sides. Diamond wire 35 is wound on the take-up reels 33, pay-off reels 34 and the wire grooves 32 of the rollers 31.

[0058] The cutting fluid supply device 4 includes a supply tank 41, a supply pipe 42 connected to the outlet end of the supply tank 41, a supply pump installed on the supply pipe 42, and a supply tray 43 connected to the other end of the supply pipe 42. An outlet 44 is provided on the side of the supply tray 43, and the outlet 44 supplies fluid to the contact surface between the diamond wire 35 and the crystal rod 7.

[0059] In use, the crystal rod 7 is fixed in the fixing groove 253, and then the rotating handle 256 is turned so that the clamping block 255 clamps and fixes the crystal rod 7 on the dovetail seat 25. Then the liquid supply pump is started so that the cutting liquid in the liquid supply tank 41 can be directed towards the position where the crystal rod 7 contacts the cutting assembly 3 for cooling. The cutting assembly 3 is started, and the roller 31, the wire feeding wheel 34 and the wire taking wheel 33 respectively feed and take in the wire. The diamond wire 35 cuts the crystal rod 7 into slices during high-speed operation.

[0060] Example 3

[0061] Please refer to Figures 6, 7, 8, and 9. The diamond curing mechanism 5 includes a rectangular box 51 covering the outer side of the upper diamond wire 35. The two sides of the rectangular box 51 are fixed to the inner sidewall of the protective shell 1. The rectangular box 51 includes a feeding area 511 and a curing area 512. Wire-passing holes 513 are evenly distributed on the side of the feeding area 511 of the rectangular box 51. The wire-passing holes 513 are inclined holes, and the hole spacing at the end of the wire-passing holes 513 closest to the crystal rod 7 is greater than the hole spacing at the other end. A storage chamber 514 is provided above the wire-passing holes 513 in the feeding area 511. The storage chamber 514 is filled with diamond particle slurry. There is a connection between the storage chamber 514 and the wire-passing holes 513. A feeding channel 515 is provided, and a pressing control mechanism 517 is provided inside the feeding channel 515. The pressing control mechanism 517 includes an insert tube 5171 that is slidably disposed inside the feeding channel 515. A plug cap 5173 is connected to the upper part of the feeding channel 515 via a support rod 5172. The plug cap 5173 matches the upper end of the insert tube 5171. The lower end of the insert tube 5171 is connected to a feeding ring 519. A discharge hole 5110 is opened in the inner ring of the feeding ring 519. The diamond wire 35 passes through the feeding ring 519. A light curing lamp 516 is installed around the curing area 512. The light curing lamp 516 is used to cure the diamond particle slurry on the diamond wire 35.

[0062] During the cutting of the crystal rod 7, the contact point between the crystal rod 7 and the diamond wire 35 is pressed down, causing the two sides of the diamond wire 35 to be inclined. Furthermore, during the cutting process, the diamond particles embedded in the steel wire may fall off, affecting subsequent cutting. In this application, the diamond wire 35 passes through the wire hole 513 of the rectangular box 51. Since the wire hole 513 is inclined, it facilitates the passage of the diamond wire 35. Diamond particle slurry is stored in the storage chamber 514, and the diamond particle slurry is fed through the feed due to gravity. The diamond wire 35 flows into the wire hole 513 through the channel 515. As the diamond wire 35 moves downward during the cutting of the crystal rod 7, it will press the feed ring 519. The feed ring 519 is connected to the insertion tube 5171, which can drive the insertion tube 5171 to move downward. As the insertion tube 5171 moves downward, the opening at the upper end of the insertion tube 5171 falls out from the plug cap 5173, allowing the diamond particle slurry to flow into the insertion tube 5171 and the feed ring 519. The feed ring 519 can coat the diamond wire 35 with the diamond particle slurry.

[0063] After cutting, the diamond wire 35 is no longer pressed by the crystal rod 7, causing both sides of the diamond wire 35 to move upward. The diamond wire 35 can drive the feeding ring 519 and the insertion tube 5171 to move upward, so that the upper end of the insertion tube 5171 blocks the plug cap 5173, preventing the diamond particle slurry stored in the storage chamber 514 from flowing out.

[0064] A scraper assembly 5111 is provided at one end of the wire hole 513. The scraper assembly 5111 includes a fixing plate 5112 disposed in the wire hole 513. Springs 5113 are connected to both sides of the fixing plate 5112. The other end of the springs 5113 is connected to the upper and lower sides of the feeding area 511 located in the wire hole 513. An installation hole 5115 is provided in the middle of the fixing plate 5112. A scraper 5116 is installed in the installation hole 5115. The scraper 5116 is disposed below the diamond wire 35. A collection groove is provided below the wire hole 513.

[0065] The diamond wire 35 passes over the scraper 5116, which is a flexible steel sheet that can scrape off the excess diamond particle slurry below the diamond wire 35 and then drop it into the collection tank below.

[0066] After the diamond wire 35 is coated with diamond particle paste, since the diamond particle paste is in a fluid state, it is easy for the diamond particle paste to fall off the diamond wire 35 after the diamond wire 35 is cut with the crystal rod 7 and washed by the cutting fluid. Therefore, it is necessary to quickly cure the diamond particle paste to fix it on the diamond wire 35. The diamond particle paste is filled with a material that can be quickly cured by light. Therefore, the diamond particle paste can be quickly cured by light curing lamp 516 to prevent the cutting fluid from washing away the diamond particles.

[0067] Example 4

[0068] A semiconductor wafer dicing process is described below:

[0069] a. Replace the roller 31 on the cutting machine with a groove pitch of 0.45mm-0.55mm;

[0070] b. Wind the 0.10mm-0.14mm diamond wire 35 into the roller groove 32 and adjust the tension to distribute the tension evenly on the wire mesh;

[0071] c. Prepare a solution with a density of 0.8 kg / m³ 3 -1.2kg / m 3 The diamond slurry is added to the cutting fluid supply device 4 of the equipment and circulated evenly;

[0072] d. Place the 6-8 inch crystal rods to be cut on the machine. Attach the crystal rods to the dovetail holder 25 with the crystal rods facing down on the dovetail holder 25 and load them into the cutting chamber of the equipment.

[0073] e. Wrap the diamond wire 35 around the diamond curing mechanism 5;

[0074] f. Set the cutting parameters according to the cross-sectional area and length of the crystal rod, such as the amount of wire used per piece, cutting time, slurry flow rate, slurry temperature, wire tension, feed speed, feed position, and wire speed.

[0075] g. Start cutting, and monitor the mortar temperature, cutting flow rate and crystal rod wire bow during the cutting process;

[0076] h. After cutting is completed, the cutting chamber lowering device slowly raises the dovetail seat 25 and the cut wafer to remove it from the wire mesh.

[0077] i. Remove the diced wafers from the machine, remove the adhesive, and collect the wafers. Pay attention to the identification of the C / Si side of the SiC diced wafers.

[0078] Example 5

[0079] The preparation process for diamond particle slurry is as follows:

[0080] Step 1: Measure the required amounts of prepolymer, reactive diluent, and photoinitiator into a mixing tank according to the proportions, and then stir thoroughly;

[0081] Step 2: Add the required diamond particles to the mixing tank and mix them thoroughly with the prepolymer, reactive diluent, and photoinitiator;

[0082] Step 3: Stir and mix thoroughly for 36 hours to ensure that the diamond particles are evenly dispersed in the prepolymer, reactive diluent, and photoinitiator, thus guaranteeing the quality of subsequent cutting;

[0083] Step 4: Pour the mixed diamond particle slurry into storage chamber 514 to replenish diamond particles to diamond wire 35.

[0084] The diamond particle slurry obtained above can be directly coated onto the diamond wire 35, and can be rapidly cured in 0.01s-0.05s by irradiation with ultraviolet light. During the diamond wire 35 cutting process, the wire speed is generally 10-15m / s, so the distance of the diamond wire 35 is about 10cm between 0.008s-0.02s. Within this distance, the ultraviolet light can make the diamond particles adhere to the diamond wire 35, making them less likely to fall off, which greatly improves the subsequent cutting quality.

[0085] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0086] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A semiconductor wafer dicing apparatus, comprising a protective housing, wherein a crystal rod support assembly and a dicing assembly are disposed inside the protective housing, the crystal rod support assembly being located above the dicing assembly, characterized in that: The protective housing also includes a cutting fluid supply device for supplying fluid to the crystal rod cutting area. This device is installed between the crystal rod support assembly and the cutting assembly. The cutting assembly is equipped with a diamond curing mechanism. The diamond curing mechanism includes a rectangular box covering the outer side of the upper diamond wire. The rectangular box includes a feeding area and a curing area. The rectangular box has evenly spaced wire-passing holes on the side of the feeding area. These holes are inclined, and the distance between the holes at the end closest to the crystal rod is greater than the distance at the other end. A storage chamber is located above the wire-passing holes in the feeding area. The storage chamber is filled with diamond particle slurry. The preparation process of the diamond particle slurry is as follows: Step 1: Measure out the diamond particle slurry according to the specified proportion. Step 1: Pour the required amounts of prepolymer, reactive diluent, and photoinitiator into a mixing tank and stir thoroughly. Step 2: Add the required diamond particles to the mixing tank and mix thoroughly with the prepolymer, reactive diluent, and photoinitiator. Step 3: Stir thoroughly for 36 hours to ensure that the diamond particles are evenly dispersed in the prepolymer, reactive diluent, and photoinitiator, ensuring subsequent cutting quality. Step 4: Pour the mixed diamond particle slurry into a storage chamber to replenish diamond particles to the diamond wire. A feeding channel is provided between the storage chamber and the wire threading hole. A pressure control mechanism is provided in the feeding channel, which includes a tube that slides within the feeding channel. A stopper cap is connected to the top of the feeding channel via a support rod. The upper ends of the insertion tubes are matched, and the lower ends of the insertion tubes are connected to a feeding ring. A feeding ring has an inner ring of discharge holes. The diamond wire passes through the feeding ring. A curing lamp is installed around the curing area to cure the diamond particle slurry on the diamond wire. The crystal rod support assembly includes a lifting assembly installed at the top of the protective housing. The lifting assembly controls the lifting of the crystal rod support assembly. The crystal rod support assembly also includes a mounting base with a mounting groove in the upper center. Four sets of guide posts are slidably arranged around the mounting base, with the upper ends of the four sets of guide posts installed at the top of the protective housing. The lifting assembly includes a hydraulic cylinder installed at the top of the protective housing. The lower end of the hydraulic cylinder... The telescopic end is installed in the mounting groove above the mounting base; a limiting groove is opened below the mounting base, and a dovetail seat is slidably arranged in the limiting groove. The dovetail seat includes a T-shaped metal seat, which is slidably installed in the limiting groove. The two sides of the metal seat are limited by limiting blocks. A fixing groove for fixing the crystal rod is opened below the metal seat. A threaded screw is threaded to the side of the metal seat. One end of the threaded screw is connected to a clamping block, and the other end of the threaded screw is provided with a rotating handle. The cutting assembly includes two sets of parallel rollers, and wire grooves are evenly opened on the rollers. Take-up reels and pay-off reels are arranged on both sides of the rollers. Diamond wire is wound on the take-up reels, pay-off reels, and wire grooves of the rollers.

2. The semiconductor wafer dicing equipment according to claim 1, characterized in that: The cutting fluid supply device includes a supply tank, an outlet end of which is connected to a supply pipe, and the other end of the supply pipe is connected to a supply tray. The supply tray has an outlet on its side, which supplies fluid to the contact surface between the diamond wire and the crystal rod.

3. The semiconductor wafer dicing equipment according to claim 1, characterized in that: A scraper assembly is provided at one end of the threading hole. The scraper assembly includes a fixing plate disposed in the threading hole. Springs are connected to both sides of the fixing plate. The other end of the springs is connected to the upper and lower sides of the feeding area located in the threading hole. An installation hole is provided in the middle of the fixing plate. A scraper is installed in the installation hole and the scraper is disposed below the diamond wire.

4. A cutting method for a semiconductor wafer dicing apparatus according to any one of claims 1-3, characterized in that: The cutting process is as follows: a) Replace the roller with one of 0.45mm-0.55mm groove spacing on the cutting machine; b) Wind 0.10mm-0.14mm diamond wire into the roller groove and adjust the tension to distribute it evenly on the steel wire mesh; c) Prepare a density of 0.8kg / m³... 3 -1.2kg / m 3 d. Add the diamond slurry to the cutting fluid supply device of the equipment and circulate it evenly; e. Place the 6-8 inch crystal rod to be cut on the machine, stick the crystal rod to the dovetail seat with the crystal rod facing down, and put it into the cutting chamber of the equipment; f. Wrap the diamond wire around the diamond curing mechanism. f. Set the cutting parameters according to the cross-sectional area and length of the crystal rod, including wire consumption per piece, cutting time, slurry flow rate, slurry temperature, wire mesh tension, feed speed, feed position, and wire mesh speed; g. Start cutting, and monitor the slurry temperature, cutting flow rate, and crystal rod wire bow during the cutting process; h. After cutting is completed, the cutting chamber lowering device slowly raises the dovetail mount and the cut wafer to remove it from the wire mesh; i. The cut wafer is removed from the machine and the adhesive is removed and collected. Note the SiC cut wafer and the C / Si surface identification.

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