Nanoimprint template anti-sticking treatment apparatus

CN121325506BActive Publication Date: 2026-08-28PULIN TECH (HANGZHOU) CO LTD
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Patent Information

Application Number
CN202511817894.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-12-04
Publication Date
2026-08-28
Estimated Expiration
2045-12-04

AI Technical Summary

Technical Problem

优势为生产效率高、适合规模化;但对基材平整度和涂布精度要求极高,易产生缺陷,卷对卷(R2R)涂布设备在纳米级涂层控制方面存在明显不足:一是液滴飞溅导致微小区域覆盖不良(<10μm);二是动态条件下难以实现分子级有序排列,造成表面能分布不均(波动幅度>10%)

Benefits of technology

[0017]与现有技术相比,本发明的有益效果是:通过在同一反应腔室内完成“等离子活化—试剂输送—气相沉积”全过程,避免跨设备转移带来的污染与活性损失,提升工艺一致性。

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Abstract

The present application relates to the technical field of micro-nano manufacturing, and particularly relates to a nano-imprint template anti-adhesion treatment device, which comprises a reaction chamber and an anti-adhesion reagent conveying system, and can complete the whole process of template surface plasma activation, anti-adhesion reagent quantitative conveying and low-temperature vapor deposition in the same chamber; accurate control of microliter-level reagent is realized through a glue spraying valve and a multi-stage valve control system, low-temperature film forming is realized in combination with a heating evaporation dish, high-temperature damage to a flexible template is avoided, plasma in-situ activation enhances surface reactivity, and the adhesion of an anti-adhesion layer is improved. The present application solves the problems of process dispersion, uneven film layer and poor compatibility of traditional equipment, significantly improves the quality of the anti-adhesion layer and the service life of the template, and is suitable for high-precision nano-imprint processes in the fields of semiconductors, optical devices and the like.
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Citation Information

Patent Citations

  • Imprinting equipment

    CN110226128B

  • Device for preparing nano-multilayer film on basis of low-pressure plasma chemical vapour deposition

    CN105420683A

  • System and method for preparing two-dimensional materials through plasma enhanced chemical vapor deposition

    CN108342716A