Semiconductor material bonding apparatus, alignment method and calibration method

Abstract

The application belongs to the technical field of bonding, and discloses a semiconductor material bonding device, an alignment method and a calibration method. The semiconductor material bonding device comprises a vacuum chamber, a pressure-bearing unit, a pressure-applying unit and a position detection unit. The vacuum chamber has a first cavity and a second cavity. The base of the pressure-bearing unit is arranged in the first cavity, and a moving platform is arranged on the base. The pressure head of the pressure-applying unit is arranged in the second cavity and directly above the base, and is used to drive the second semiconductor material to press the first semiconductor material in the first direction. The position detection unit is located outside the vacuum chamber. A first downward detection camera and a second downward detection camera detect the mark position of the first semiconductor material through the first cavity, and a first upward detection camera and a second upward detection camera detect the mark position of the second semiconductor material through the first cavity. The application can not destroy the vacuum degree of the vacuum chamber, reduce the volume of the vacuum chamber and shorten the vacuumizing time.

Description

Technical Field

[0001] This invention relates to the field of bonding technology, and more particularly to a semiconductor material bonding apparatus, alignment method, and calibration method. Background Technology

[0002] With continuous technological advancements, the requirements for wafer bonding technology are becoming increasingly stringent. As a core component for achieving inter-wafer signal interconnection, wafer bonding's main function is to precisely bond two wafers in the vertical direction, ensuring efficient and stable signal transmission between them. To achieve this, the primary condition is precise alignment between the two wafers; even the slightest deviation can obstruct signal transmission, thereby affecting the performance and reliability of the entire semiconductor device.

[0003] To improve the precision of wafer alignment and thus ensure the bonding quality of the upper and lower wafers, existing technologies symmetrically place two marker points on the upper wafer and two marker points on the lower wafer. Before bonding, a precise alignment mechanism ensures that the two marker points on the upper wafer and the two marker points on the lower wafer are precisely aligned, thereby ensuring accurate bonding of the upper and lower wafers in the vertical direction and improving bonding quality. This design improves the precision and stability of wafer bonding to a certain extent, providing a strong guarantee for the high performance of semiconductor devices.

[0004] However, existing bonding devices still face several unresolved design and implementation challenges. Specifically, current bonding devices house multiple position detection cameras within a vacuum chamber for real-time, precise detection and positioning of markers on the wafer. However, this design introduces several drawbacks. First, the position detection camera wires need to extend out of the vacuum chamber to connect to external devices and transmit data. This process easily disrupts the vacuum level of the chamber, leading to an unstable environment and impacting the quality and reliability of wafer bonding. Second, to accommodate these position detection cameras and their wires, the vacuum chamber must be enlarged, increasing manufacturing costs and floor space, as well as extending the vacuuming time and reducing bonding efficiency. In the semiconductor manufacturing industry, which strives for high efficiency and high productivity, this drawback undoubtedly becomes a bottleneck restricting technological progress and industrial upgrading. Summary of the Invention

[0005] The purpose of this invention is to provide a semiconductor material bonding apparatus, alignment method, and calibration method that can perform high-precision alignment and bonding between wafers without damaging the vacuum level of the vacuum chamber, reducing the volume of the vacuum chamber, and shortening the vacuuming time.

[0006] To achieve this objective, the present invention adopts the following technical solution:

[0007] Semiconductor material bonding apparatus, including:

[0008] A vacuum chamber having a first cavity and a second cavity that are interconnected along a first direction;

[0009] The pressure-bearing unit includes a base and a motion platform. The base is disposed in the first cavity, and the motion platform is disposed on the base. The motion platform is at least capable of driving a first semiconductor material to rotate and move along a second direction.

[0010] The pressure application unit includes a pressure head, which is disposed in the second cavity and located directly above the base. The pressure head is used to drive the second semiconductor material to press against the first semiconductor material along the first direction.

[0011] The position detection unit, located outside the vacuum chamber, includes a first downward detection camera, a second downward detection camera, a first upward detection camera, and a second upward detection camera. The first downward detection camera and the second downward detection camera are both located above the first cavity and symmetrically arranged on both sides of the second cavity, respectively, and are used to detect the marking position of the first semiconductor material through the first cavity. The first upward detection camera and the second upward detection camera are both located below the first cavity and symmetrically arranged, respectively, and are used to detect the marking position of the second semiconductor material through the first cavity.

[0012] As an alternative to the semiconductor material bonding device, the bottom wall of the first cavity is symmetrically provided with a first observation window and a second observation window. The first upward detection camera is used to detect the position of the third mark of the second semiconductor material through the first observation window, and the second upward detection camera is used to detect the position of the fourth mark of the second semiconductor material through the second observation window.

[0013] As an alternative to the semiconductor material bonding device, the top wall of the first cavity is symmetrically provided with a third observation window and a fourth observation window. The motion platform can drive the first semiconductor material to move so that a first mark of the first semiconductor material is aligned with the third observation window. The first downward detection camera is used to detect the position of the first mark through the third observation window. The motion platform can also drive the first semiconductor material to move so that a second mark of the first semiconductor material is aligned with the fourth observation window. The second downward detection camera is used to detect the position of the second mark through the fourth observation window.

[0014] As an alternative to the semiconductor material bonding device, the pressure-bearing unit further includes:

[0015] A first suction cup is fixedly disposed on the motion platform and is used to adsorb and fix the first semiconductor material.

[0016] As an optional solution for semiconductor material bonding apparatus, the base is symmetrically provided with a first through hole and a second through hole, the motion platform is symmetrically provided with a third through hole and a fourth through hole, the first suction cup is provided with a fifth through hole corresponding to the third through hole, the first suction cup is provided with a sixth through hole corresponding to the fourth through hole, and when the motion platform is located directly below the pressure head, the axes of the first through hole, the third through hole, the fifth through hole and the first observation window coincide, and the axes of the second through hole, the fourth through hole, the sixth through hole and the second observation window coincide.

[0017] As an alternative to the semiconductor material bonding device, the top wall of the second cavity is provided with a mounting interface, and the pressure application unit further includes:

[0018] A bellows, one end of which is sealed to the mounting interface, and the other end of which is sealed to the pressure head;

[0019] A pressure rod, one end of which passes through the bellows and is fixedly connected to the pressure head, and the other end of which is used to connect to the power mechanism;

[0020] The second suction cup is fixedly connected to the lower pressing surface of the pressure head, and the second suction cup is used to adsorb and fix the second semiconductor material.

[0021] As an optional solution for semiconductor material bonding devices, the position detection unit further includes:

[0022] A first position adjustment mechanism is provided, and the first upward detection camera is mounted on the first position adjustment mechanism. The first position adjustment mechanism is capable of driving the first upward detection camera to move along the first direction and the second direction.

[0023] The second position adjustment mechanism is used to move the second upward detection camera along the first direction and the second direction.

[0024] A third position adjustment mechanism is provided, on which the first downward detection camera is mounted. The third position adjustment mechanism is capable of moving the first downward detection camera along the first direction and the second direction.

[0025] A fourth position adjustment mechanism is provided, on which the second downward detection camera is mounted. The fourth position adjustment mechanism is capable of moving the second downward detection camera along the first direction and the second direction.

[0026] An alignment method, applied to the alignment of a semiconductor material bonding apparatus as described in any of the preceding claims, includes the following steps:

[0027] S1. The second semiconductor material is loaded onto the second suction cup. The first upward detection camera detects the position of the third mark on the second semiconductor material, and the second upward detection camera detects the position of the fourth mark on the second semiconductor material.

[0028] S2. The first semiconductor material is loaded onto the first suction cup, and the first semiconductor material is moved by the motion platform so that the first mark of the first semiconductor material is located in the field of view of the first downward detection camera, and the first downward detection camera detects the position of the first mark; the first semiconductor material is moved by the motion platform so that the second mark of the first semiconductor material is located in the field of view of the second downward detection camera, and the second downward detection camera detects the position of the second mark.

[0029] S3. Calculate the placement errors of the third and fourth marks relative to the first and second marks, respectively;

[0030] S4. Based on the placement error, compensation is made through the motion platform to align the first mark with the third mark and the second mark with the fourth mark.

[0031] A calibration method, applied to the calibration of a semiconductor material bonding apparatus as described in any of the preceding claims, includes the following steps:

[0032] S1. Move the motion platform directly under the pressure head and place the first calibration plate on the second suction cup;

[0033] S2. Calibrate the positions of the first upward detection camera and the second upward detection camera according to the first calibration point and the second calibration point known on the first calibration plate, so that the first upward detection camera and the second upward detection camera are set symmetrically.

[0034] S3. Place the second calibration plate on the first suction cup;

[0035] S4. Based on the third and fourth calibration points at known positions on the second calibration plate, calibrate the installation positions of the first and second downward detection cameras so that the first and second downward detection cameras are symmetrically set.

[0036] As an alternative calibration method, the following steps are also included:

[0037] S5. The first calibration sheet and the second calibration sheet are bonded together by the pressure head. The second calibration sheet is provided with a fifth calibration point and a sixth calibration point corresponding to the first calibration point and the second calibration point, respectively. The first calibration sheet is made of transparent material.

[0038] S6. Identify the bonding position error after the first calibration point and the fifth calibration point overlap, and identify the bonding position error after the second calibration point and the sixth calibration point overlap.

[0039] S7. The motion platform compensates for alignment accuracy based on bonding position error.

[0040] The beneficial effects of this invention are:

[0041] The semiconductor material bonding apparatus provided by this invention comprises a first and second cavity of a vacuum chamber forming a convex structure. The base of the pressure-bearing unit is disposed within the first cavity of the vacuum chamber. A motion platform can move and rotate the first semiconductor material within a horizontal plane. The pressure head of the pressure-applying unit is disposed within the second cavity of the vacuum chamber, allowing the second semiconductor material to be bonded to the first semiconductor material. By placing the first downward detection camera, second downward detection camera, first upward detection camera, and second upward detection camera of the position detection unit outside the vacuum chamber, camera wires are prevented from passing through the vacuum chamber. This not only preserves the vacuum level of the vacuum chamber but also reduces its volume and shortens the evacuation time. During the mark position detection process, the first upward detection camera and second upward detection camera detect the mark position of the second semiconductor material, while the first downward detection camera and second downward detection camera detect the mark position of the first semiconductor material. The placement error between the marks is calculated, and error compensation is performed by the motion platform, improving the alignment accuracy of the first and second semiconductor materials before bonding.

[0042] The alignment method provided by this invention first loads a second semiconductor material onto a second suction cup. A first upward detection camera detects the position of a third mark on the second semiconductor material, and a second upward detection camera detects the position of a fourth mark on the second semiconductor material. Then, a first semiconductor material is loaded onto the first suction cup. A motion platform moves the first semiconductor material so that a first mark on the first semiconductor material is within the field of view of a first downward detection camera, which detects the position of the first mark. The motion platform then moves the first semiconductor material again so that a second mark on the first semiconductor material is within the field of view of a second downward detection camera, which detects the position of the second mark. The placement errors of the third and fourth marks relative to the first and second marks are calculated. Based on these placement errors, the motion platform compensates for them, aligning the first mark with the third mark and the second mark with the fourth mark. This calculation and compensation based on the placement errors improves the alignment accuracy between the first and second semiconductor materials. There are no limitations on the light transmittance of the semiconductor material, making it applicable to various semiconductor materials.

[0043] The calibration method provided by this invention involves moving a motion platform directly below the pressure head and placing a first calibration plate on a second suction cup. The positions of the first and second upward detection cameras are calibrated according to the first and second calibration points on the first calibration plate, ensuring symmetrical arrangement. A second calibration plate is then placed on the first suction cup. The mounting positions of the first and second downward detection cameras are calibrated according to the third and fourth calibration points on the second calibration plate, ensuring symmetrical arrangement. The positions of the first and second upward detection cameras can be calibrated using the first calibration plate, and the positions of the first and second downward detection cameras can be calibrated using the second calibration plate. Attached Figure Description

[0044] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the content of the embodiments of the present invention and these drawings without creative effort.

[0045] Figure 1 This is an assembly diagram of the semiconductor material bonding device in an embodiment of the present invention;

[0046] Figure 2 This is a schematic diagram of the second semiconductor material being placed in the second suction cup in an embodiment of the present invention;

[0047] Figure 3 This is a schematic diagram of the first semiconductor material being placed on the first suction cup in an embodiment of the present invention;

[0048] Figure 4 This is a schematic diagram illustrating how the motion platform drives the first semiconductor material to move to the left in an embodiment of the present invention;

[0049] Figure 5 This is a schematic diagram illustrating how the motion platform drives the first semiconductor material to move to the right in an embodiment of the present invention;

[0050] Figure 6 This is a flowchart of the alignment method in an embodiment of the present invention;

[0051] Figure 7 This is a schematic diagram of placing the first calibration wafer and the second calibration wafer into the semiconductor material bonding device in an embodiment of the present invention;

[0052] Figure 8 This is a flowchart of the calibration method in an embodiment of the present invention.

[0053] Figure label:

[0054] 100. First semiconductor material; 101. First mark; 102. Second mark;

[0055] 200. Second semiconductor material; 201. Third marker; 202. Fourth marker;

[0056] 300, First calibration piece; 301, First calibration point; 302, Second calibration point;

[0057] 400. Second calibration point; 401. Third calibration point; 402. Fourth calibration point; 403. Fifth calibration point; 404. Sixth calibration point;

[0058] 1. Vacuum chamber; 2. Pressure-bearing unit; 3. Pressure-applying unit; 4. Position detection unit;

[0059] 11. First cavity; 111. First observation window; 112. Second observation window; 113. Third observation window; 114. Fourth observation window; 12. Second cavity;

[0060] 21. Base; 22. Motion platform; 23. First suction cup;

[0061] 31. Pressure head; 32. Bellows; 33. Pressure rod; 34. Second suction cup;

[0062] 41. First upward detection camera; 42. Second upward detection camera; 43. First downward detection camera; 44. Second downward detection camera; 45. First position adjustment mechanism; 46. Second position adjustment mechanism; 47. Third position adjustment mechanism; 48. Fourth position adjustment mechanism. Detailed Implementation

[0063] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0064] In the description of this invention, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection or a detachable connection; a mechanical connection or an electrical connection; a direct connection or an indirect connection through an intermediate medium; or the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0065] In the description of this invention, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0066] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0067] To maintain the vacuum level of the vacuum chamber, reduce its volume, and shorten the evacuation time, this embodiment provides a semiconductor material bonding apparatus, alignment method, and calibration method, which are described below in conjunction with... Figures 1 to 8 The specific content of this embodiment will be described in detail. It should be particularly noted that, in order to clearly and accurately describe the positional relationships and movement directions of the components in the technical solution described in this embodiment, we explicitly define: the first direction is... Figure 1 The Z direction, as clearly indicated, typically represents the vertical direction and primarily involves the vertical pressing motion of the material during semiconductor bonding; the second direction is... Figure 1 The X-direction, lying in the horizontal plane, is a crucial dimension for the horizontal movement and adjustment of semiconductor materials. Regarding camera-detected marker positions, this specifically means using a camera to accurately detect the coordinates (X, Y) of a specific marker on the semiconductor material within the XY plane of the material. The camera-based marker measurement algorithm used here is a mature technology widely applied in many related fields. Its principle is based on camera imaging and image processing algorithms, enabling rapid and accurate acquisition of the marker's position information within the plane; therefore, it will not be elaborated upon further here.

[0068] like Figures 1 to 5As shown, the semiconductor material bonding apparatus in this embodiment includes a vacuum chamber 1, a pressure-bearing unit 2, a pressure-applying unit 3, and a position detection unit 4. The vacuum chamber 1 serves as a crucial environmental guarantee for the entire bonding process. It has a first cavity 11 and a second cavity 12 interconnected along a first direction (Z direction), forming a convex structure. This structural design not only makes full use of space but also shortens the distance between the camera and the wafer. Even if the camera is positioned outside the cavity, this distance still meets the camera's focal length range. Exemplarily, in other embodiments, the top wall of the vacuum chamber 1 can be spaced with two recessed groove structures, and the camera can be placed in these groove structures to further shorten the distance between the camera and the wafer. The pressure-bearing unit 2 undertakes the important task of supporting and adjusting the first semiconductor material 100. The pressure-bearing unit 2 includes a base 21 and a motion platform 22. The base 21 is stably disposed within the first cavity 11, providing a solid foundation for the entire pressure-bearing unit 2. The motion platform 22 is mounted on the base 21. The motion platform 22 can at least rotate the first semiconductor material 100 and move it along the second direction (X direction). This flexible movement allows the first semiconductor material 100 to be precisely positioned within a horizontal plane to meet the requirement of accurate alignment with the second semiconductor material 200. The pressure application unit 3 is a key component for achieving semiconductor material bonding. The pressure application unit 3 includes a pressure head 31, which is located within the second cavity 12 directly above the base 21. During the bonding process, under the command of the control system, the pressure head 31 can steadily press the second semiconductor material 200 against the first semiconductor material 100 along the first direction (Z direction). By applying appropriate pressure, the two semiconductor materials achieve a strong bond, forming a complete semiconductor device structure. The position detection unit 4 is located outside the vacuum chamber 1 and includes a first downward detection camera 43, a second downward detection camera 44, a first upward detection camera 41, and a second upward detection camera 42. The first downward detection camera 43 and the second downward detection camera 44 are both located above the first cavity 11 and symmetrically arranged on both sides of the second cavity 12. Their main function is to accurately detect the marking positions on the first semiconductor material 100 through the first cavity 11. The first upward detection camera 41 and the second upward detection camera 42 are both located below the first cavity 11 and are also symmetrically arranged. They are responsible for detecting the marking positions on the second semiconductor material 200 through the first cavity 11. For example, the motion platform 22 is a UVW platform.

[0069] By placing the four cameras of the position detection unit 4 outside the vacuum chamber 1, the problem of camera wires needing to pass through the vacuum chamber 1 is completely avoided. In traditional bonding device designs, because the cameras are located inside the vacuum chamber 1, the wires must pass through the chamber to connect to external devices. This process easily disrupts the vacuum level of the vacuum chamber 1, leading to an unstable environment within the chamber and affecting the bonding quality of semiconductor materials. The design of this embodiment fundamentally solves this problem, maintaining a stable vacuum level in the vacuum chamber 1 at all times, providing a pure and stable environment for semiconductor material bonding, and effectively improving bonding reliability and yield. Secondly, this design also significantly reduces the volume of the vacuum chamber 1. Since there is no need to reserve space for the cameras and their wires within the chamber, the structure of the vacuum chamber 1 can be more compact, and its volume is significantly reduced. This not only reduces the manufacturing cost of the equipment and the amount of materials used, but also makes the equipment more space-efficient during installation and use, improving space utilization. At the same time, the reduction in the volume of the vacuum chamber 1 also brings another important advantage: shortening the vacuuming time. In semiconductor manufacturing, vacuuming is a time-consuming process. A smaller vacuum chamber can achieve the required vacuum level more quickly, thereby significantly improving the efficiency of the entire bonding process, shortening the production cycle, and saving companies a lot of time and costs.

[0070] During the mark position detection process, the device in this embodiment uses a first upward detection camera 41 and a second upward detection camera 42 to detect the mark position on the second semiconductor material 200, and simultaneously uses a first downward detection camera 43 and a second downward detection camera 44 to detect the mark position on the first semiconductor material 100. This allows for the rapid and accurate calculation of the placement error between the marks on the two semiconductor materials. Once an error is detected, the control system immediately sends a command to the motion platform 22, which then makes precise adjustments and compensations based on the error data, ensuring highly accurate alignment between the first semiconductor material 100 and the second semiconductor material 200 before bonding. This precise alignment technology significantly improves the bonding quality of the semiconductor materials, reduces bonding failures and performance degradation caused by alignment errors, and provides a strong guarantee for the production of high-quality, high-performance semiconductor devices.

[0071] Furthermore, the bottom wall of the first cavity 11 is symmetrically provided with a first observation window 111 and a second observation window 112. A first upward detection camera 41 is used to detect the position of the third mark 201 on the second semiconductor material 200 through the first observation window 111, and a second upward detection camera 42 is used to detect the position of the fourth mark 202 on the second semiconductor material 200 through the second observation window 112. This symmetrical arrangement facilitates standardized operation during device design and installation, reduces installation difficulty and errors, and improves the reliability of the entire detection system. In actual testing, the two upward detection cameras can work simultaneously to quickly acquire the position information of different marks on the second semiconductor material 200, providing crucial data support for subsequent precise bonding.

[0072] Furthermore, the top wall of the first cavity 11 is symmetrically provided with a third observation window 113 and a fourth observation window 114. The motion platform 22 can move the first semiconductor material 100 so that the first mark 101 of the first semiconductor material 100 is aligned with the third observation window 113. The first downward detection camera 43 is used to detect the position of the first mark 101 through the third observation window 113. The motion platform 22 can also move the first semiconductor material 100 so that the second mark 102 of the first semiconductor material 100 is aligned with the fourth observation window 114. The second downward detection camera 44 is used to detect the position of the second mark 102 through the fourth observation window 114. This precise adjustment of the mark position of the first semiconductor material 100 to align with the observation window by the motion platform 22 fully utilizes the motion capability of the motion platform 22, ensuring precise alignment between the mark and the observation window, avoiding detection errors caused by alignment deviations, and greatly improving the detection accuracy. On the other hand, this design makes the detection process more flexible and efficient. The motion platform 22 can quickly adjust the position of the first semiconductor material 100 according to actual needs without large-scale adjustments to the entire device, saving detection time and improving production efficiency.

[0073] Since markers are typically fabricated on the wafer surface, for opaque wafers, the only solution is to place a recognition camera on the opposite side of the wafer. This embodiment, through a design with observation windows on both the top and bottom, working in conjunction with corresponding detection cameras, allows the bonding device to be used with wafers made of both transparent and opaque materials. By simultaneously detecting multiple marker positions on the first semiconductor material 100 and the second semiconductor material 200, the relative positional relationship between the two semiconductor materials can be comprehensively and accurately determined, and the positional error between them can be calculated. Then, based on this error data, the motion platform 22 can perform precise error compensation, adjusting the first semiconductor material 100 to a position precisely aligned with the second semiconductor material 200. This effectively reduces bonding failures and device performance degradation caused by inaccurate alignment, improving product yield and quality stability.

[0074] Furthermore, the pressure-bearing unit 2 also includes a first suction cup 23, which is fixedly mounted on the motion platform 22. The first suction cup 23 is used to adsorb and fix the first semiconductor material 100. When a specific voltage is applied to the first suction cup 23, an electrostatic field is generated on the surface of the suction cup. When the first semiconductor material 100 is placed on the first suction cup 23, due to the conductivity or dielectric properties of the semiconductor material itself, induced charges are generated under the action of the electrostatic field. These induced charges attract each other with the charges on the surface of the first suction cup 23, thereby generating a strong adsorption force. Compared with the traditional mechanical clamping method, the adsorption and fixation method of the first suction cup 23 will not cause mechanical damage to the first semiconductor material 100. When mechanical clamps hold semiconductor materials, they may leave scratches, indentations, and other defects on the surface of the semiconductor material due to factors such as excessive clamping force or unreasonable clamping position. These defects will seriously affect the performance of the semiconductor material and the subsequent bonding quality. However, the first suction cup 23 fixes the semiconductor material through electrostatic adsorption force, without causing any physical damage to the surface of the semiconductor material, thus ensuring the surface integrity and quality of the semiconductor material. During electrostatic adsorption, the electrostatic field is uniformly distributed across the entire surface of the chuck, ensuring a uniform adsorption force on the first semiconductor material 100. This uniform adsorption force ensures that the first semiconductor material 100 does not experience localized stress concentration during adsorption, avoiding problems such as deformation and warping caused by uneven stress. Especially when processing thin, large-area semiconductor materials, the uniform adsorption force ensures the semiconductor material remains flat, providing favorable conditions for subsequent accurate detection and bonding operations. For example, when detecting marking positions on the first semiconductor material 100, deformation or warping of the semiconductor material can lead to inaccurate marking position detection, thus affecting bonding accuracy. The uniform adsorption force of the first chuck 23 effectively avoids this situation, improving the accuracy of detection and bonding. The first chuck 23 also has good controllability. By adjusting the voltage applied to the first chuck 23, the magnitude of the adsorption force can be precisely controlled. Different adjustments to the adsorption force of the first semiconductor material 100 may be required at different process stages.

[0075] Furthermore, the base 21 is symmetrically provided with a first through hole and a second through hole, the motion platform 22 is symmetrically provided with a third through hole and a fourth through hole, the first suction cup 23 is provided with a fifth through hole corresponding to the third through hole, and the first suction cup 23 is provided with a sixth through hole corresponding to the fourth through hole. When the motion platform 22 is located directly below the pressure head 31, the axes of the first through hole, the third through hole, the fifth through hole and the first observation window 111 coincide, and the axes of the second through hole, the fourth through hole, the sixth through hole and the second observation window 112 coincide. This design ensures that the first upward detection camera 41 and the second upward detection camera 42 can detect the marking position on the second semiconductor material 200 without obstruction through these coinciding axes. Light can smoothly pass through the observation window and each through hole along a straight line to reach the detection camera, avoiding problems such as light attenuation and image blurring caused by component obstruction, greatly improving the accuracy and clarity of detection.

[0076] Furthermore, the top wall of the second cavity 12 is provided with an installation interface. The pressure application unit 3 also includes a bellows 32, a pressure rod 33, and a second suction cup 34. One end of the bellows 32 is sealed to the installation interface, and the other end is sealed to the pressure head 31. This sealed connection must not only ensure sealing performance but also consider the flexibility and stability of the bellows 32 during expansion and contraction. The bellows 32 itself has good flexibility and elasticity, allowing it to expand and contract freely when the pressure head 31 moves up and down. One end of the pressure rod 33 passes through the bellows 32 and is fixedly connected to the pressure head 31. This insertion method ensures the connection strength between the pressure rod 33 and the pressure head 31 while allowing the pressure rod 33 to move freely within the bellows 32 without being restricted by the expansion and contraction of the bellows 32. The fixed connection between the pressure rod 33 and the pressure head 31 may employ a high-strength threaded connection or welding process to ensure that it will not loosen or fall off when transmitting large pressures. The other end of the pressure rod 33 is used to connect to the power mechanism, which transmits power to the pressure head 31 through the pressure rod 33, driving the pressure head 31 to move up and down. The second suction cup 34 is fixedly connected to the lower pressing surface of the pressure head 31, and is used to adsorb and fix the second semiconductor material 200. The working principle of the second suction cup 34 is based on the electrostatic adsorption effect. When a specific voltage is applied to the second suction cup 34, an electrostatic field is generated on the surface of the suction cup. When the second semiconductor material 200 is placed on the second suction cup 34, due to the conductivity or dielectric properties of the semiconductor material itself, induced charges are generated under the action of the electrostatic field. These induced charges attract each other with the charges on the surface of the second suction cup 34, thereby generating a strong adsorption force. The second suction cup 34 also adopts the electrostatic adsorption fixation method, which will not cause any mechanical damage to the surface of the second semiconductor material 200.

[0077] Furthermore, the position detection unit 4 also includes a first position adjustment mechanism 45, a second position adjustment mechanism 46, a third position adjustment mechanism 47, and a fourth position adjustment mechanism 48. A first upward detection camera 41 is mounted on the first position adjustment mechanism 45, which can move the first upward detection camera 41 along a first direction and a second direction. A second upward detection camera 42 is mounted on the second position adjustment mechanism 46, which can move the second upward detection camera 42 along the first direction and a second direction. A first downward detection camera 43 is mounted on the third position adjustment mechanism 47, which can move the first downward detection camera 43 along the first direction and a second direction. A second downward detection camera 44 is mounted on the fourth position adjustment mechanism 48, which can move the second downward detection camera 44 along the first direction and a second direction. This bidirectional movement capability allows the first upward detection camera 41, the second upward detection camera 42, the first downward detection camera 43, and the second downward detection camera 44 to flexibly adjust their positions within a large range according to actual detection needs. Moreover, the four position adjustment mechanisms can independently adjust the position of the detection camera according to the actual detection situation.

[0078] It is worth mentioning that when the position adjustment mechanism uses a lead screw slide module with a drive motor, this design greatly facilitates camera focusing when the drive motor moves the camera along the first direction. During semiconductor bonding, the inspection camera needs to be accurately focused on the inspection area of ​​the semiconductor material to obtain a clear image. The movement of the drive motor along the first direction allows for fine-tuning of the entire inspection camera, thereby quickly and accurately adjusting the camera's focal length. For example, when the distance between the inspection camera and the semiconductor material changes, the drive motor can move along the first direction according to a preset algorithm and feedback signal, restoring the distance between the camera and the inspection area to the optimal focusing distance, ensuring the clarity and resolution of the inspection image. This focusing method features fast response and high precision, meeting the stringent requirements for inspection speed and accuracy in semiconductor manufacturing processes.

[0079] like Figure 1 Combination Figure 6 As shown, this embodiment also provides an alignment method applied to the alignment of the semiconductor material bonding device mentioned above. By employing multiple detection cameras to detect multiple key marks on the semiconductor material from different angles, the accuracy and reliability of position detection are greatly improved. Multi-angle detection can avoid blind spots and errors, obtaining more comprehensive and accurate position information, providing a solid foundation for subsequent error calculation and compensation adjustments. The alignment method includes the following steps:

[0080] Step S1, Loading and Marking Detection of the Second Semiconductor Material 200: First, the second semiconductor material 200 is loaded onto the second suction cup 34; then, the first upward detection camera 41 and the second upward detection camera 42 are started to begin detection. The first upward detection camera 41 detects the position of the third mark 201 on the second semiconductor material 200, and the second upward detection camera 42 detects the position of the fourth mark 202 on the second semiconductor material 200. These two upward detection cameras detect the second semiconductor material 200 from different angles, which not only improves the reliability of detection, but also obtains more dimensional position information, providing more comprehensive data support for subsequent error calculation.

[0081] Step S2, Loading and Marking Inspection of the First Semiconductor Material 100: After completing the inspection of the second semiconductor material 200, the first semiconductor material 100 is loaded onto the first suction cup 23. Then, the first semiconductor material 100 is moved using a precision motion platform 22. First, the first semiconductor material 100 is moved so that the first mark 101 of the first semiconductor material 100 is within the field of view of the first downward detection camera 43. The first downward detection camera 43 detects the position of the first mark 101 (this detection process is similar to the operation of the upward detection camera; the position coordinates of the first mark 101 are accurately determined through high-resolution imaging and image processing technology). Then, the first semiconductor material 100 is moved using the motion platform 22 so that the second mark 102 of the first semiconductor material 100 is within the field of view of the second downward detection camera 44. The second downward detection camera 44 detects the position of the second mark 102 (this step-by-step detection method ensures the accurate acquisition of the positions of the two key marks on the first semiconductor material 100).

[0082] Step S3: Calculation of Placement Position Error: Calculate the placement position errors of the third mark 201 and the fourth mark 202 relative to the first mark 101 and the second mark 102, respectively (these errors include translation errors in the X and Y directions and rotation errors around the Z axis, etc. Through detailed analysis of these errors, a comprehensive understanding of the relative positional deviation between the first semiconductor material 100 and the second semiconductor material 200 can be obtained, providing an accurate basis for subsequent compensation adjustments).

[0083] Step S4: Error-based motion platform 22 compensation and alignment: Based on the placement position error, the motion platform 22 is used for compensation so that the first mark 101 is aligned with the third mark 201 and the second mark 102 is aligned with the fourth mark 202.

[0084] like Figure 1 Combination Figure 7 and Figure 8As shown, this embodiment also provides a calibration method applied to the calibration of the semiconductor material bonding device mentioned above. The calibration method includes the following steps:

[0085] Step S1, Positioning of the motion platform 22 and placement of the first calibration plate 300: The motion platform 22 moves directly below the pressure head 31 and places the first calibration plate 300 on the second suction cup 34 (the second suction cup 34 uses the principle of electrostatic adsorption to firmly adsorb the first calibration plate 300 in a non-contact manner, ensuring that the calibration plate will not shift or shake during placement, thereby ensuring the accuracy of the position of the calibration points on the calibration plate. The first calibration plate 300 serves as an important reference in the calibration process, and its surface is made with a first calibration point 301 and a second calibration point 302 with known precise positions).

[0086] Step S2: Position Calibration of the First and Second Upward Detection Cameras: The positions of the first upward detection camera 41 and the second upward detection camera 42 are calibrated according to the known positions of the first calibration point 301 and the second calibration point 302 on the first calibration plate 300, ensuring that the first upward detection camera 41 and the second upward detection camera 42 are symmetrically positioned. (The first upward detection camera 41 and the second upward detection camera 42 are key components for detecting semiconductor materials from above; the accuracy of their positions directly affects the detection accuracy of the markers above the semiconductor material. During calibration, the first upward detection camera 41 and the second upward detection camera 42 are controlled to capture images of the first calibration point 301 and the second calibration point 302, respectively. The acquired images are analyzed in depth to extract the position information of the calibration points in the images. Combined with the known actual position coordinates of the first calibration point 301 and the second calibration point 302 on the first calibration plate 300, the deviation between the current camera position and the ideal symmetrical position is calculated. This symmetrical setup ensures that the two cameras have the same viewing angle and detection range during the detection process, thereby guaranteeing the consistency and accuracy of the detection results for markers at different positions above the semiconductor material.)

[0087] Step S3, Placement of the second calibration plate 400: After completing the position calibration of the first and second upward detection cameras, place the second calibration plate 400 on the first suction cup 23 (the second calibration plate 400 is similar to the first calibration plate 300, and its surface is made with a third calibration point 401 and a fourth calibration point 402 with known precise positions. These calibration points will be used to calibrate the installation positions of the first downward detection camera 43 and the second downward detection camera 44).

[0088] Step S4, Calibration of the installation positions of the first and second downward detection cameras: Calibrate the installation positions of the first downward detection camera 43 and the second downward detection camera 44 according to the known positions of the third calibration point 401 and the fourth calibration point 402 on the second calibration plate 400, so that the first downward detection camera 43 and the second downward detection camera 44 are symmetrically set.

[0089] By using calibration plates with known, precise calibration points, an accurate and reliable reference standard is provided for camera calibration, significantly improving the accuracy and reliability of the calibration. Compared to traditional calibration methods relying on manual visual inspection or simple measuring tools, this method eliminates the influence of human factors and measuring tool errors, ensuring the accuracy and consistency of calibration results. Symmetrical calibration is performed on both the upward and downward detection cameras, ensuring that both sets of cameras have the same viewing angle and detection range during the detection process. This symmetrical setup guarantees uniform and accurate detection of all detection areas when performing omnidirectional detection of semiconductor materials, avoiding detection blind spots or errors caused by asymmetrical camera positions, thereby improving the accuracy and reliability of the entire detection system.

[0090] Furthermore, the calibration method also includes the following steps: Step S5, bonding operation of calibration plates: The first calibration plate 300 and the second calibration plate 400 are bonded together by the pressure head 31, wherein the second calibration plate 400 is provided with a fifth calibration point 403 and a sixth calibration point 404 corresponding to the first calibration point 301 and the second calibration point 302, respectively. The first calibration plate 300 is made of transparent material (glass is specifically chosen as the material of the first calibration plate 300 because glass has extremely high flatness and its surface micro-undulations are minimal, which can minimize the interference of unevenness of the calibration plate itself on the bonding position detection, and ensure the accuracy of the detection results). Accuracy. Secondly, the glass has good optical transparency, which allows light to pass smoothly through the first calibration plate 300 during subsequent inspection using an optical inspection camera, enabling the camera to clearly capture the calibration points on the second calibration plate 400 below, providing the necessary conditions for accurate detection of bonding position errors; Step S6, Bonding Position Error Detection: (The first downward inspection camera 43 and the second downward inspection camera 44 can be used for detection) Identify the bonding position error after the first calibration point 301 overlaps with the fifth calibration point 403, and identify the bonding position error after the second calibration point 302 overlaps with the sixth calibration point 404 (these errors may include translational errors in the X and Y directions and rotational errors around the Z axis). After the calibration plates are bonded, the first downward inspection camera 43 and the second downward inspection camera 44 are activated to inspect the bonded calibration plates. Since the first calibration plate 300 is made of transparent glass, the two downward detection cameras can clearly capture the fifth calibration point 403 and the sixth calibration point 404 on the second calibration plate 400 through the first calibration plate 300, and can also identify the first calibration point 301 and the second calibration point 302 on the first calibration plate 300. Step S7, Alignment Accuracy Compensation: The motion platform 22 performs alignment accuracy compensation based on the bonding position error. Even before bonding, when the upper and lower wafers are aligned by the motion platform 22, during the bonding process, the pressure head 31 may introduce systematic errors due to vibration or other reasons while driving the second semiconductor material 200 downward. Therefore, by detecting the bonding position error, systematic error compensation can be performed before the subsequent actual bonding, thereby improving bonding efficiency.

[0091] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. A semiconductor material bonding apparatus, characterized in that, include: The vacuum chamber (1) has a first cavity (11) and a second cavity (12) that are interconnected along a first direction; The pressure-bearing unit (2) includes a base (21) and a motion platform (22). The base (21) is disposed in the first cavity (11), and the motion platform (22) is disposed on the base (21). The motion platform (22) is at least capable of driving the first semiconductor material (100) to rotate and move along a second direction. The pressure unit (3) includes a pressure head (31), which is disposed in the second cavity (12) and located directly above the base (21). The pressure head (31) is used to drive the second semiconductor material (200) to press against the first semiconductor material (100) along the first direction. The position detection unit (4) is located outside the vacuum chamber (1) and includes a first downward detection camera (43), a second downward detection camera (44), a first upward detection camera (41), and a second upward detection camera (42). The first downward detection camera (43) and the second downward detection camera (44) are both located above the first cavity (11) and symmetrically arranged on both sides of the second cavity (12), respectively used to detect the marking position of the first semiconductor material (100) through the first cavity (11). The first upward detection camera (41) and the second upward detection camera (42) are both located below the first cavity (11) and symmetrically arranged, respectively used to detect the marking position of the second semiconductor material (200) through the first cavity (11).

2. The semiconductor material bonding apparatus according to claim 1, characterized in that, The bottom wall of the first cavity (11) is symmetrically provided with a first observation window (111) and a second observation window (112). The first upward detection camera (41) is used to detect the position of the third mark (201) of the second semiconductor material (200) through the first observation window (111), and the second upward detection camera (42) is used to detect the position of the fourth mark (202) of the second semiconductor material (200) through the second observation window (112).

3. The semiconductor material bonding apparatus according to claim 2, characterized in that, The top wall of the first cavity (11) is symmetrically provided with a third observation window (113) and a fourth observation window (114). The motion platform (22) can drive the first semiconductor material (100) to move, so that the first mark (101) of the first semiconductor material (100) is aligned with the third observation window (113). The first downward detection camera (43) is used to detect the position of the first mark (101) through the third observation window (113). The motion platform (22) can drive the first semiconductor material (100) to move, so that the second mark (102) of the first semiconductor material (100) is aligned with the fourth observation window (114). The second downward detection camera (44) is used to detect the position of the second mark (102) through the fourth observation window (114).

4. The semiconductor material bonding apparatus according to claim 2, characterized in that, The pressure-bearing unit (2) also includes: The first suction cup (23) is fixedly disposed on the motion platform (22) and is used to adsorb and fix the first semiconductor material (100).

5. The semiconductor material bonding apparatus according to claim 4, characterized in that, The base (21) is symmetrically provided with a first through hole and a second through hole, the motion platform (22) is symmetrically provided with a third through hole and a fourth through hole, the first suction cup (23) is provided with a fifth through hole corresponding to the third through hole, the first suction cup (23) is provided with a sixth through hole corresponding to the fourth through hole, when the motion platform (22) is located directly below the pressure head (31), the axes of the first through hole, the third through hole, the fifth through hole and the first observation window (111) coincide, and the axes of the second through hole, the fourth through hole, the sixth through hole and the second observation window (112) coincide.

6. The semiconductor material bonding apparatus according to claim 2, characterized in that, The top wall of the second cavity (12) is provided with an installation interface, and the pressure application unit (3) further includes: A bellows (32), one end of which is sealed to the mounting interface, and the other end of which is sealed to the pressure head (31); A pressure rod (33) is provided, one end of which is inserted into the bellows (32) and fixedly connected to the pressure head (31), and the other end of which is used to connect to the power mechanism. The second suction cup (34) is fixedly connected to the lower pressing surface of the pressure head (31) and is used to adsorb and fix the second semiconductor material (200).

7. The semiconductor material bonding apparatus according to any one of claims 1-6, characterized in that, The position detection unit (4) further includes: A first position adjustment mechanism (45) is provided, on which the first upward detection camera (41) is mounted. The first position adjustment mechanism (45) is capable of driving the first upward detection camera (41) to move along the first direction and the second direction. The second position adjustment mechanism (46) is mounted on the second position adjustment mechanism (46), and the second position adjustment mechanism (46) can drive the second upward detection camera (42) to move along the first direction and the second direction; A third position adjustment mechanism (47) is provided, on which the first downward detection camera (43) is mounted. The third position adjustment mechanism (47) is capable of moving the first downward detection camera (43) along the first direction and the second direction. The fourth position adjustment mechanism (48) is mounted on the second downward detection camera (44), and the fourth position adjustment mechanism (48) can drive the second downward detection camera (44) to move along the first direction and the second direction.

8. An alignment method, characterized in that, Alignment applied to the semiconductor material bonding apparatus as described in any one of claims 1-7 includes the following steps: S1. The second semiconductor material (200) is loaded onto the second suction cup (34). The first upward detection camera (41) is used to detect the position of the third mark (201) of the second semiconductor material (200), and the second upward detection camera (42) is used to detect the position of the fourth mark (202) of the second semiconductor material (200). S2. The first semiconductor material (100) is loaded onto the first suction cup (23), and the first semiconductor material (100) is moved by the motion platform (22) so that the first mark (101) of the first semiconductor material (100) is located in the field of view of the first downward detection camera (43), and the first downward detection camera (43) detects the position of the first mark (101); the first semiconductor material (100) is moved by the motion platform (22) so that the second mark (102) of the first semiconductor material (100) is located in the field of view of the second downward detection camera (44), and the second downward detection camera (44) detects the position of the second mark (102); S3. Calculate the placement errors of the third mark (201) and the fourth mark (202) relative to the first mark (101) and the second mark (102), respectively; S4. Based on the placement error, compensation is made by the motion platform (22) so that the first mark (101) is aligned with the third mark (201) and the second mark (102) is aligned with the fourth mark (202).

9. A calibration method, characterized in that, The calibration of the semiconductor material bonding apparatus as described in any one of claims 1-7 includes the following steps: S1. The motion platform (22) moves to directly below the pressure head (31) and places the first calibration plate (300) on the second suction cup (34); S2. Based on the first calibration point (301) and the second calibration point (302) at known positions on the first calibration plate (300), calibrate the positions of the first upward detection camera (41) and the second upward detection camera (42) so that the first upward detection camera (41) and the second upward detection camera (42) are symmetrically set. S3. Place the second calibration plate (400) on the first suction cup (23); S4. Based on the known positions of the third calibration point (401) and the fourth calibration point (402) on the second calibration plate (400), calibrate the installation positions of the first downward detection camera (43) and the second downward detection camera (44) so ​​that the first downward detection camera (43) and the second downward detection camera (44) are symmetrically set.

10. The calibration method according to claim 9, characterized in that, It also includes the following steps: S5. The first calibration sheet (300) and the second calibration sheet (400) are bonded together by the pressure head (31). The second calibration sheet (400) is provided with a fifth calibration point (403) and a sixth calibration point (404) corresponding to the first calibration point (301) and the second calibration point (302), respectively. The first calibration sheet (300) is made of transparent material. S6. Identify the bonding position error after the first calibration point (301) and the fifth calibration point (403) overlap, and identify the bonding position error after the second calibration point (302) and the sixth calibration point (404) overlap. S7, Motion platform (22) performs alignment accuracy compensation based on bonding position error.

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