Preparation method of wafer-level high-orientation one-dimensional nano-material film

Abstract

The invention relates to a preparation method of a wafer-level high-orientation one-dimensional nano-material film, which comprises the following steps of: evaporating an organic molecular layer on the surface of a substrate with parallel regular grooves, and evaporating a nano-material on the organic molecular layer to obtain the wafer-level high-orientation one-dimensional nano-material film, the nanowire film material can be completely stripped from a substrate and transferred to other substrates, and the organic molecule is a long-chain compound with a riveting rope structure. According to the preparation method, preparation of the wafer-level high-orientation one-dimensional nano-material film with high quality and continuously adjustable thickness can be realized, the preparation process is simple, the operation is convenient and fast, and the cost is low.

Description

Technical Field

[0001] This invention relates to the field of inorganic semiconductor nanomaterials technology, and in particular to a method for preparing wafer-level highly oriented one-dimensional nanomaterial thin films. Background Technology

[0002] Layered semiconductor materials have attracted widespread attention due to their unique physicochemical properties. These materials can maintain structural stability and inherent characteristics while achieving atomically thin thicknesses. Tellurium (Te), as a single-element van der Waals semiconductor, has garnered significant interest due to its inherent quasi-one-dimensional helical chain crystal structure, exhibiting remarkable anisotropic physical properties. Atom-thick Te exhibits p-type conductivity and ultra-high carrier mobility, and has been used to construct various functional logic gates and circuits. Furthermore, Te's narrow bandgap (≈0.31 eV) and excellent photomatter interaction make it an ideal candidate material for constructing high-performance broadband photodetectors. Moreover, Te possesses novel magnetoelectric effects, excellent thermoelectric properties, significant piezoelectric characteristics, and outstanding nonlinear optical properties. Its unique quasi-one-dimensional chiral helical chain structure provides an important opportunity to explore dichroism and chiral properties related to linear structures, thus demonstrating great potential in the design of multifunctional electronic and optoelectronic devices, such as polarization-sensitive photodetectors, VR interactive devices, neuroreflex devices, chiral spintronic devices, and valleytronic devices.

[0003] Previous research reports have primarily described the preparation of two-dimensional and one-dimensional Te crystals via hydrothermal synthesis, a method that is insufficient for large-scale material fabrication. Vapor deposition (CVD) has been widely applied to the synthesis of graphene and various two-dimensional transition metal dichalcogenides (TMDs), proving to be an effective method for preparing large-area materials with high crystallinity and compatibility with modern electronic manufacturing processes. Significant progress has also been made in using CVD for Te growth; researchers have achieved the selective synthesis of one-dimensional Te nanowires and two-dimensional Te nanosheets by precisely controlling growth conditions. However, the lattice orientation of Te crystals prepared using these methods generally exhibits considerable randomness, inevitably leading to heterogeneity in material properties.

[0004] Performance heterogeneity caused by random orientation is a common problem faced by all anisotropic two-dimensional and one-dimensional materials, which severely restricts the research on the fundamental properties of these materials and their application in large-scale devices. The fabrication of Te crystals with strictly uniform orientation, dense and uniform distribution, and controllable thickness is a key foundation for ensuring the performance uniformity of chip-scale integrated devices. Previous research teams have grown Te nanowires with consistent orientation on m-plane trench substrates, but these nanowires suffer from large thickness and sparse distribution, making it difficult to meet the requirements of large-scale circuit integration and applications. Therefore, there is an urgent need for a method to fabricate one-dimensional van der Waals nanomaterials with high orientation consistency. Summary of the Invention

[0005] To address the technical challenges of non-uniform performance caused by the random orientation of anisotropic nanomaterials and the difficulty of meeting the requirements of large-scale integration using existing preparation methods, organic molecules are used to modify the substrate surface. This effectively reduces the substrate surface energy and increases the nucleation sites for nanomaterials, resulting in dense, uniform, highly consistent, and continuously controllable van der Waals one-dimensional nanomaterial films. Furthermore, these films are easily transferred intact.

[0006] To achieve this objective, the present invention adopts the following technical solution:

[0007] In a first aspect, the present invention provides a method for preparing a wafer-level highly oriented one-dimensional nanomaterial thin film. The method includes depositing an organic molecular layer on the surface of a substrate having parallel regular trenches, depositing nanomaterials on the organic molecular layer, and obtaining the wafer-level highly oriented one-dimensional nanomaterial thin film. The nanowire thin film material can be completely peeled off from the substrate and transferred to other substrates. The organic molecules are long-chain compounds with a rope structure.

[0008] This invention utilizes molecular beam epitaxy induced by organic molecules to grow van der Waals one-dimensional nanomaterials on a substrate, which can significantly improve the orientation consistency of one-dimensional nanomaterials.

[0009] The following are preferred technical solutions of the present invention, but are not intended to limit the technical solutions provided by the present invention. The purpose and beneficial effects of the present invention can be better achieved and realized through the following preferred technical solutions.

[0010] As a preferred embodiment of the present invention, the substrate includes a pretreated m-plane Al2O3 substrate.

[0011] Preferably, the pretreatment includes annealing.

[0012] Preferably, the annealing process is performed in an atmospheric atmosphere.

[0013] Preferably, the annealing temperature is 1200~1600℃, for example, it can be 1200℃, 1300℃, 1400℃, 1500℃, 1550℃ or 1600℃.

[0014] Preferably, the annealing time is 10-15 hours, for example, 10 hours, 11 hours, 13 hours, 14 hours, 15 hours, etc.

[0015] This invention obtains a regular trench structure by annealing an m-plane Al2O3 substrate, which allows nanomaterials to grow along the trench direction and improves orientation consistency.

[0016] As a preferred technical solution of the present invention, the rivet structure includes any one or a combination of at least two of the following: imidazole functional groups, amino groups, or carbon-carbon double bonds, and the rope structure includes a long carbon chain, such as oleic acid imidazoline, lauryl hydroxyethyl imidazoline, or PA650.

[0017] Preferably, the long-chain compound comprises a low molecular weight polyamide, preferably PA650.

[0018] Preferably, the carbon chain length of the long-chain compound is ≥7.

[0019] This invention utilizes the self-assembly of organic molecules on the trench surface of a substrate to retain the trench structure of the substrate while increasing the nucleation sites of nanomaterials, thereby preparing dense, uniform, highly consistent in orientation, and continuously controllable van der Waals one-dimensional nanomaterial thin films.

[0020] As a preferred embodiment of the present invention, the thickness of the organic molecular layer is 7 to 25 angstroms, for example, it can be 7 angstroms, 10 angstroms, 15 angstroms, 20 angstroms, 23 angstroms or 25 angstroms.

[0021] Preferably, the thickness of the organic molecular layer is monitored using a quartz crystal oscillating film thickness gauge.

[0022] As a preferred technical solution of the present invention, the evaporation of the organic molecular layer includes heating organic molecules to the evaporation temperature and evaporating them onto the substrate.

[0023] Preferably, the substrate is not heated during the process of vapor deposition of the organic molecular layer.

[0024] As a preferred technical solution of the present invention, pre-evaporation is performed before the evaporation of the organic molecular layer.

[0025] Preferably, the pre-evaporation includes heating the organic molecules before evaporating the organic molecular layer. The heating temperature is ≤400℃, such as 200℃, 250℃, 300℃, 350℃, 380℃ or 400℃, and the heating time is 2~4 hours, such as 2 hours, 2.5 hours, 3 hours, 3.5 hours, 3.8 hours or 4 hours.

[0026] This invention enables organic molecules to undergo a complete pyrolysis reaction through pre-evaporation, releasing ammonia and moisture. Another portion of the pyrolysis products, low-molecular-weight carbon chains, remain in the crucible and are then deposited onto the substrate.

[0027] As a preferred technical solution of the present invention, the evaporation rate of the vapor-deposited nanomaterial thin film is 0.5~1.0 Å / s, for example, it can be 0.5 Å / s, 0.6 Å / s, 0.7 Å / s, 0.8 Å / s, 0.9 Å / s or 1.0 Å / s, etc.

[0028] As a preferred technical solution of the present invention, the vapor-deposited nanomaterial thin film includes heating the nanomaterial to the evaporation temperature and vapor-depositing it onto the organic molecular layer.

[0029] Preferably, the substrate is subjected to high-temperature vacuum degassing before the nanomaterial film is deposited.

[0030] Preferably, the high-temperature vacuum degassing includes heating the substrate to 180~200°C under vacuum conditions, for example, 180°C, 185°C, 190°C, 195°C or 200°C, and degassing for 3~10 min, for example, 3 min, 5 min, 7 min, 9 min or 10 min.

[0031] Preferably, the substrate is heated during the vapor deposition of the nanomaterial thin film.

[0032] Preferably, the heating temperature of the substrate during the vapor deposition of the nanomaterial thin film is 110~180℃, for example, it can be 110℃, 130℃, 150℃, 170℃ or 180℃.

[0033] In this invention, the pre-evaporation and evaporation of the organic molecular layer, as well as the evaporation of the nanomaterials, are all performed under vacuum conditions, wherein the vacuum degree is ≥10. -4 Pa.

[0034] As a preferred technical solution of the present invention, the thickness of the nanomaterial film is 10-500 nm, for example, it can be 10 nm, 100 nm, 200 nm, 350 nm, 450 nm or 500 nm.

[0035] Preferably, the growth material of the highly oriented one-dimensional nanomaterial film includes Te, Se, Sb or Sb2Se3, with Te being the most preferred.

[0036] Preferably, the microstructure of the highly oriented one-dimensional nanomaterial film includes nanotubes, nanowires, nanosheets, or nanorods, with nanowires being the most preferred.

[0037] As a preferred embodiment of the present invention, the stripping method includes organic polymer-assisted wet transfer.

[0038] Preferably, the organic polymer includes PMMA, PPC, or PDMS, with PMMA being the most preferred.

[0039] The wet transfer of the organic polymer described in this invention can be performed according to methods and steps commonly used by those skilled in the art, specifically including:

[0040] (1) Spin-coating an organic polymer onto the surface of a nanomaterial film, drying it to form a transfer support layer, immersing it in a transfer medium, and then peeling the substrate off from the nanomaterial film.

[0041] (2) Insert the target receiving substrate into the transfer medium at an angle, drive the film to spread on the surface of the target receiving substrate, then lift the target receiving substrate horizontally to remove it from the medium, remove excess liquid from the edges to make the film adhere tightly to the substrate and dry it.

[0042] (3) Depending on the type of support layer, remove the transfer support layer by soaking in the corresponding solvent.

[0043] Compared with the prior art, the present invention has at least the following beneficial effects:

[0044] (1) The nanomaterials of the present invention are grown along the trench direction on the substrate, the growth orientation is highly suppressed, and the nanowires are dense and uniform, forming a uniform and continuous nanowire film.

[0045] (2) By controlling the growth time, the thickness of the film can be continuously and precisely adjusted from 10 to 140 nm.

[0046] (3) The present invention can realize wafer-level large-area growth transfer, which can be easily and completely transferred to other substrates, with high crystal quality, and can be directly used for the integration of large-area devices. Attached Figure Description

[0047] Figure 1 These are structural diagrams of the apparatus for vapor deposition of organic molecular layers according to some embodiments of the present invention;

[0048] Figure 2 These are structural diagrams of the apparatus for vapor deposition of nanomaterials according to some embodiments of the present invention;

[0049] Figure 3 These are atomic force microscope images of the substrate after annealing in Embodiment 1 of the present invention, and a graph showing the relationship between trench depth and width.

[0050] Figure 4 This is a process diagram of the PMMA-assisted wet transfer method used in Embodiment 1 of the present invention to transfer a Te nanowire thin film from a substrate to a SiO2 wafer, wherein... Figure 4 a represents a substrate on which Te nanowire thin films have been grown. Figure 4 b represents the Te nanowire film after the substrate has been removed. Figure 4 c represents the Te nanowire thin film transferred to the SiO2 sheet. Figure 4 d represents a Te nanowire film with PMMA removed;

[0051] Figure 5 These are scanning electron microscope images of different regions of the Te nanowire thin film prepared in Example 1 of this invention;

[0052] Figure 6 This is the X-ray diffraction pattern of the Te nanowire thin film prepared in Example 1 of this invention;

[0053] Figure 7 These are the infrared absorption spectra of organic molecules before and after pre-evaporation in Example 1 of this invention;

[0054] Figure 8 These are optical micrographs of the Te nanowire thin film prepared in Comparative Example 1 of this invention.

[0055] Figure 9 These are optical microscopic comparison images of the Te nanowire thin films prepared in Comparative Examples 3 and 4 and Example 1 of this invention;

[0056] Figure 10 These are optical microscopic comparison images of the Te nanowire thin films prepared in Examples 1-6 of this invention;

[0057] Figure 11 These are scanning electron microscope images of Te nanowire thin films prepared at different substrate temperatures in Example 7 of this invention;

[0058] Figure 12 These are scanning electron microscope images of Te nanowire thin films prepared at different substrate temperatures in Example 8 of this invention;

[0059] Figure 13 These are scanning electron microscope images of Te nanowire thin films prepared at different substrate temperatures in Example 9 of this invention;

[0060] Figure 14 These are scanning electron microscope images of Te nanowire thin films prepared at different substrate temperatures in Comparative Example 2 of this invention. Detailed Implementation

[0061] To facilitate understanding of the present invention, the following embodiments are provided. Those skilled in the art should understand that these embodiments are merely illustrative and should not be construed as limiting the scope of the invention.

[0062] Example 1

[0063] This embodiment provides a method for preparing highly oriented Te nanowire thin films, the method comprising:

[0064] (1) An Al2O3 substrate with a diameter of 3.3 cm was placed in an alumina ceramic boat and annealed at 1300℃ in an atmospheric atmosphere for 10 hours to obtain a neatly arranged trench surface structure as shown in the figure. Figure 3 As shown, PA650 molecules with a thickness of 18 angstroms were then thermally deposited onto the annealed Al2O3 substrate, as... Figure 1 As shown, the PA650 molecular device was placed in a molybdenum boat, and a voltage was applied to the molybdenum boat through the terminals. The boat was then heated to 250°C for pre-evaporation for 3 hours. Figure 7 The image shows the infrared absorption spectra of organic molecules before and after pre-evaporation. After the beam stabilizes, the substrate baffle is opened, and the thickness of the organic molecular layer is monitored by a film thickness gauge until it reaches 18 angstroms, at which point the evaporation of the organic molecular layer is completed.

[0065] (2) such as Figure 2 As shown, the Al2O3 substrate with the evaporated organic molecular layer was placed in a molecular beam epitaxy chamber and degassed at 200°C for 5 min using a heating stage. The substrate temperature was then slowly reduced to 146°C and held for 10 min to ensure uniform heating. The Te source was heated to 240°C using a K-Cell evaporation furnace. The evaporation beam current was monitored using a film thickness gauge and was approximately 0.8 Å / s. After the beam current stabilized, the baffle of the evaporation source was opened, and the vacuum level was maintained at 10°C throughout the evaporation process. -5 Pa, Te was deposited for 5 min, the evaporation source baffle was turned off, and the heating lamp filament power was turned off. When the substrate temperature dropped to room temperature, the grown sample was transferred out of the vacuum chamber, resulting in a highly oriented Te nanowire thin film grown on an m-plane Al2O3 substrate. Figure 5 The image shown is a scanning electron microscope image of different regions of a Te nanowire thin film. Figure 6 The image shows the X-ray diffraction pattern of the Te nanowire thin film.

[0066] (3) PMMA was spin-coated ten times on the surface of the Te nanowire film at a speed of 3000 rpm. After each spin-coating, the film was baked at 120°C for 2 minutes on a hot plate. Then, the PMMA-supported sample was immersed in deionized water and gently peeled off from the edge of the sapphire substrate with tweezers to separate the PMMA-supported Te nanowire film from the substrate. The free PMMA-supported Te nanowire film was carefully retrieved and transferred to a SiO2 / Si substrate. It was baked at 120°C for 10 minutes to remove residual moisture. Finally, the PMMA support layer was dissolved by soaking in acetone for 20 minutes to obtain a highly oriented Te nanowire film transferred to SiO2, such as... Figure 4 This is a diagram illustrating the process of transferring a Te nanowire thin film from a substrate to a SiO2 / Si wafer.

[0067] Example 2

[0068] This embodiment provides a method for preparing highly oriented Te nanowire thin films, the method comprising:

[0069] (1) An Al2O3 substrate with a diameter of 3.3 cm was placed in an alumina ceramic boat and annealed at 1200°C in an atmospheric atmosphere for 15 hours to obtain a neatly arranged trench surface structure. Then, PA650 molecules with a thickness of 7 Å were thermally vapor-deposited on the annealed Al2O3 substrate, such as... Figure 1 As shown, the PA650 molecular device was placed in a molybdenum boat, and a voltage was applied to the molybdenum boat through the terminal block. The boat was heated to 250°C for pre-evaporation for 2 hours. After the beam current stabilized, the substrate baffle was opened, and the thickness of the organic molecular layer was monitored using a film thickness gauge. The evaporation of the organic molecular layer was completed after the thickness reached 7 angstroms.

[0070] (2) such as Figure 2 As shown, the Al2O3 substrate with the evaporated organic molecular layer was placed in a molecular beam epitaxy chamber and degassed at 200°C for 5 min using a heating stage. The substrate temperature was then slowly lowered to 146°C and held for 10 min to ensure uniform heating. The Te source was heated to 240°C using a K-Cell evaporation furnace. The evaporation beam current was monitored using a film thickness gauge and was approximately 0.5 Å / s. After the beam current stabilized, the baffle of the evaporation source was opened, and the vacuum level was maintained at 10°C throughout the evaporation process. -5 Pa, Te was deposited for 5 min, the evaporation source baffle was turned off, and the heating lamp filament power was turned off. When the substrate temperature dropped to room temperature, the grown sample was transferred out of the vacuum chamber, resulting in a highly oriented Te nanowire thin film grown on an m-plane Al2O3 substrate. Figure 10 b is an optical micrograph of the Te nanowire thin film.

[0071] Example 3

[0072] This embodiment provides a method for preparing highly oriented Te nanowire thin films, the method comprising:

[0073] (1) An Al2O3 substrate with a diameter of 3.3 cm was placed in an alumina ceramic boat and annealed at 1600 °C in an atmospheric atmosphere for 12 hours to obtain a neatly arranged trench surface structure. Then, PA650 molecules with a thickness of 25 Å were thermally vapor-deposited on the annealed Al2O3 substrate, such as... Figure 1 As shown, the PA650 molecular device was placed in a molybdenum boat, and a voltage was applied to the molybdenum boat through the terminal block. The boat was heated to 250°C for pre-evaporation for 4 hours. After the beam current stabilized, the substrate baffle was opened, and the thickness of the organic molecular layer was monitored using a film thickness gauge. The evaporation of the organic molecular layer was completed after the thickness reached 7 angstroms.

[0074] (2) such as Figure 2 As shown, the Al2O3 substrate with the evaporated organic molecular layer was placed in a molecular beam epitaxy chamber and degassed at 200°C for 5 min using a heating stage. The substrate temperature was then slowly lowered to 146°C and held for 10 min to ensure uniform heating. The Te source was heated to 240°C using a K-Cell evaporation furnace. The evaporation beam current was monitored using a film thickness gauge and was approximately 0.5 Å / s. After the beam current stabilized, the baffle of the evaporation source was opened, and the vacuum level was maintained at 10°C throughout the evaporation process. -5 Pa, Te was deposited for 5 min, the evaporation source baffle was turned off, and the heating lamp filament power was turned off. When the substrate temperature dropped to room temperature, the grown sample was transferred out of the vacuum chamber, resulting in a highly oriented Te nanowire thin film grown on an m-plane Al2O3 substrate. Figure 10 d is an optical micrograph of the Te nanowire thin film.

[0075] Example 4

[0076] This embodiment provides a method for preparing highly oriented Te nanowire thin films. The preparation method is identical to that in Example 1, except that the PA650 molecule deposition thickness is 4 angstroms. Figure 10 a is an optical micrograph of the Te nanowire thin film.

[0077] Example 5

[0078] This embodiment provides a method for preparing highly oriented Te nanowire thin films. The preparation method is identical to that in Example 1, except that the PA650 molecule deposition thickness is 70 angstroms. Figure 10 e is an optical micrograph of the Te nanowire thin film.

[0079] Example 6

[0080] This embodiment provides a method for preparing highly oriented Te nanowire thin films. The preparation method is identical to that in Example 1, except that the vapor deposition thickness of PA650 molecules is >300 angstroms. Figure 10 f is an optical micrograph of the Te nanowire thin film.

[0081] Example 7

[0082] This embodiment provides a method for preparing highly oriented Te nanowire thin films. The method involves depositing Te at substrate heating temperatures of 110°C, 130°C, 150°C, 160°C, 170°C, and 180°C, with all other preparation conditions being the same as in Example 1. Figure 11 Scanning electron microscope images of Te nanowire thin films grown at different substrate temperatures.

[0083] Example 8

[0084] This embodiment provides a method for preparing highly oriented Te nanowire thin films. The organic molecular layer deposited by the method is oleic acid imidazoline. Te is deposited at substrate heating temperatures of 110°C, 130°C, 140°C, and 150°C, respectively. All other preparation conditions are the same as in Example 1. Figure 12 Scanning electron microscope images of Te nanowire thin films grown at different substrate temperatures.

[0085] Example 9

[0086] This embodiment provides a method for preparing highly oriented Te nanowire thin films. The organic molecular layer deposited in this method is lauryl hydroxyethyl imidazoline. Te is deposited at substrate heating temperatures of 110°C, 130°C, 140°C, and 150°C, respectively. All other preparation conditions are the same as in Example 1. Figure 13 Scanning electron microscope images of Te nanowire thin films grown at different substrate temperatures.

[0087] Comparative Example 1

[0088] This comparative example provides a method for preparing Te nanowire thin films. The method is identical to that in Example 1, except that a baffle is used to block half of the substrate during PA650 evaporation. Figure 8 This is an optical micrograph of the Te nanowire thin film.

[0089] Comparative Example 2

[0090] This comparative example provides a method for preparing a Te nanowire thin film. The method uses trenchless mica as a substrate, and Te is deposited by vapor deposition at substrate heating temperatures of 110°C, 130°C, 150°C, 160°C, 170°C, and 180°C, respectively. All other preparation conditions are the same as in Example 1. Figure 14 This is a scanning electron microscope image of the Te nanowire thin film.

[0091] Comparative Example 3

[0092] This comparative example provides a method for preparing highly oriented Te nanowire thin films. The preparation method is identical to that in Example 1, except that the organic molecule used in the vapor deposition is 1-ethylimidazole. Figure 9 a is an optical micrograph of the Te nanowire thin film.

[0093] Comparative Example 4

[0094] This comparative example provides a method for preparing highly oriented Te nanowire thin films. The preparation method is identical to that in Example 1, except that the organic molecule used in the vapor deposition is diethylenetriamine. Figure 9 b is an optical micrograph of the Te nanowire thin film.

[0095] The test results show that:

[0096] (1) As can be seen from Examples 1 to 3, the present invention can achieve high orientation growth of Te nanowires on the substrate surface by using an m-plane alumina substrate with regular trench structure and evaporating an organic molecular layer for molecular beam induced growth, thereby obtaining a Te nanowire thin film with regular morphology, dense and uniform structure and consistent orientation.

[0097] (2) As can be seen from Examples 1 and 4-9, by further limiting the type and thickness range of the organic molecular layer, the present invention can achieve better Te nanowire orientation control effect. When the thickness of the organic molecular layer is controlled at 7-25 Å, or when oleic acid imidazoline or lauryl hydroxyethyl imidazoline is selected, the orientation consistency of the Te nanowire is high. The long-chain organic molecules with the rivet structure can effectively promote the orientation growth of the nanowire material. However, when the thickness of PA650 is less than 7 Å or greater than 25 Å, the orientation consistency of the film decreases significantly.

[0098] (3) As can be seen from Example 1 and Comparative Examples 1-4, the present invention improves the growth density and orientation consistency of Te nanowire thin films through organic molecular layers. When the organic molecular layer only covers part of the substrate, the growth effect of the thin film in the part without the organic molecular layer is significantly reduced. The present invention can obtain highly oriented Te nanowire thin films by using a substrate with a trench structure. However, when a mica substrate without trenches is used, the orientation of the Te nanowire thin films grown in the same temperature range is disordered and cannot achieve a high orientation effect. When 1-ethylimidazole and diethylenetriamine are selected as organic molecular layers, the orientation consistency of the film is significantly reduced due to the lack of a specific rivet structure.

[0099] In summary, this invention achieves highly oriented growth of nanowire thin films through the synergistic control of a substrate with a trench structure and the process of evaporating organic molecular layers. The prepared Te nanowire thin films have significant advantages in orientation and uniformity, laying the foundation for their application in optoelectronic devices and other fields.

[0100] The applicant declares that the above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the protection and disclosure scope of the present invention.

Claims

1. A method for preparing a wafer-level high-orientation one-dimensional nanomaterial thin film, characterized in that, The preparation method comprises the following steps: evaporating an organic molecule layer on a substrate surface with parallel regular grooves, evaporating nanomaterials on the organic molecule layer, and obtaining the wafer-level high-orientation one-dimensional nanomaterial film, the nanowire film material can be completely peeled off from the substrate and transferred to other substrates, and the organic molecule is a long-chain compound with a rivet rope structure.

2. The production method according to claim 1, characterized by, The substrate comprises an m-plane Al2O3 substrate after pretreatment. Preferably, the pretreatment comprises annealing treatment. Preferably, the annealing treatment is carried out in an atmospheric atmosphere. Preferably, the temperature of the annealing treatment is 1200-1600 ℃. Preferably, the annealing treatment is carried out for 10-15 h.

3. The production method according to claim 1 or 2, characterized by, The rivet structure in the rivet rope structure comprises any one or a combination of at least two of imidazole functional groups, amino groups or carbon-carbon double bonds, and the rope structure comprises a long carbon chain. Preferably, the long-chain compound comprises a low-molecular-weight polyamide, preferably PA650. Preferably, the carbon chain length of the long-chain compound is greater than or equal to 7.

4. The production method according to any one of claims 1 to 3, characterized by, The thickness of the organic molecule layer is 7-25 angstroms. Preferably, the thickness of the organic molecule layer is monitored by using a quartz crystal oscillation film thickness meter.

5. The method of any one of claims 1 to 4, wherein the method further comprises the step of: The evaporation of the organic molecule layer comprises heating the organic molecules to an evaporation temperature and evaporating them onto the substrate. Preferably, the substrate is not heated during the evaporation of the organic molecule layer.

6. The method of any one of claims 1 to 5, wherein the method further comprises the step of: Pre-evaporation is carried out before the evaporation of the organic molecule layer. Preferably, the pre-evaporation comprises heating the organic molecules before the evaporation of the organic molecule layer, the heating temperature is less than or equal to 400 ℃, and the heating time is 2-4 h.

7. The method of any one of claims 1 to 6, wherein the method further comprises the step of: The evaporation rate of the nanomaterials is 0.5-1.0 angstroms per second. ​ 8. The method of any one of claims 1 to 7, wherein the method further comprises the step of: The evaporation of the nanomaterials comprises heating the nanomaterials to an evaporation temperature and evaporating them onto the organic molecule layer. ​ Preferably, the substrate is subjected to high-temperature vacuum degassing before the evaporation of the nanomaterials. Preferably, the substrate is heated during the evaporation of the nanomaterials. Preferably, the heating temperature of the substrate during the evaporation of the nanomaterials is 110-180 ℃.

9. The method of any one of claims 1 to 8, wherein the method further comprises the step of: The thickness of the nanomaterial film is 10-500 nm. Preferably, the growth material of the high-orientation one-dimensional nanomaterial film comprises Te, Se, Sb or Sb2Se3, preferably Te. Preferably, the micro-morphology of the high-orientation one-dimensional nanomaterial film comprises nanotubes, nanowires, nanosheets or nanorods, preferably nanowires.

10. The method of any one of claims 1 to 9, wherein the method further comprises the step of: The peeling method comprises an organic polymer-assisted wet transfer. ​ Preferably, the organic polymer comprises PMMA, PPC or PDMS, preferably PMMA.

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