Dresser for CMP (chemical mechanical polishing) process and method and process for creating and monitoring pores of polishing pad

Abstract

The present invention relates to a dresser for a CMP process, a method for creating and monitoring pores of a polishing pad, and a process, the dresser being provided with a substrate, at least one sheet-like body disposed on a side surface of the substrate, and a modular polishing unit disposed on the at least one sheet-like body, the modular polishing unit being disposed on the at least one sheet-like body, the modular polishing unit being disposed on the at least one sheet-like body, the modular polishing unit being disposed on the at least one sheet-like body, and the modular polishing unit being disposed on the at least one sheet-like body. The modular unit is provided with a plurality of single bodies, the single bodies are arranged on the at least one sheet-shaped body at intervals, each single body is provided with a convex part, the convex parts of the single bodies have different heights, the convex parts of the single bodies of the trimmer are used for polishing the polishing pad, and regionalized polishing pad grooves with the same height and the same plane are formed in the polishing pad. And through the generation of the lateral morphology of the polishing pad groove formed on the polishing pad by the secondary convex part of each monomer, the polishing liquid is effectively retained, the thermal expansion of the trimmer and the polishing pad caused by heating is effectively controlled, the influence of poor surface texture and the like is improved, and the cost of the whole CMP process is effectively reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to a CMP process, apparatus and monitoring method, in particular, a CMP process, apparatus, conditioner and polishing pad quality monitoring method capable of easily penetrating into a polishing pad and forming a regionalized co-height, co-planar, scribed polishing pad groove, removing a glazed surface or dirt on the polishing pad, regenerating the polishing pad to make the polishing pad surface roughness uniform, and creating a polishing pad groove lateral profile, which is conducive to the CMP process, apparatus, conditioner and polishing pad quality monitoring method. BACKGROUND

[0002] The chemical mechanical polishing / planarization (CMP) process is the main planarization process for wafers in semiconductor manufacturing; when the feature size of a semiconductor wafer is less than 0.35 micrometers (μm), global planarization must be performed; CMP is currently the most efficient planarization technology in the world; as integrated circuit line widths continue to shrink, DUV (Deep Ultraviolet Lithography) / EUV (Extreme Ultraviolet) optical N.A values (Numerical aperture) continue to increase, and the depth of field becomes shorter and shorter, so the wafer planarization process must be performed before exposure, development and etching; through the CMP process, a conditioner (or diamond disc) with good distribution is used to regenerate the surface topography of the polishing pad, for example, in the case of EUV extreme ultraviolet light source technology, the depth of field (DoF) is shown in the following formula:

[0003] DoF = K·λ / NA 2

[0004] where λ is the wavelength and NA is the numerical aperture; when the wavelength is a constant 13.5 nm, and the NA is assumed to be 0.55, the depth of field needs to be less than 15 nm. In other words, if the wafer cannot be polished to this level, exposure and development will fail. In addition, the material removal rate (MRR) can be maintained and the planarization of the wafer surface can be ensured. Therefore, the co-height of the conical high end of the existing conditioner is very important, as it determines the depth and width of the groove produced by the existing conditioner when scribing the existing polishing pad, as well as the amount of surface fluff created, which can contain more chemical polishing liquid (or polishing liquid); secondly, the co-height of the conical high end of each regionalized module forms the co-planarity of the existing conditioner. However, if the conical high end of the conditioner is too high or the cross section is too large, it will cause the polishing pad 400 to produce a high protrusion 401 as shown in Figure 25 , which will scratch the wafer surface.

[0005] However, as shown in Figure 25As shown, if one of the cone high end of the existing trimmer is higher than the high end of a group of cones, it will cause the existing polishing pad 400 to produce a high protrusion 401, which will indirectly scratch the surface of the wafer; the protrusion 401 is because the existing polishing pad 400 is deformed when the existing trimmer is pressed against the polishing pad 400, and then produces a ridge during lateral movement, therefore, the control of the common height and coplanarity of the high end of the cone is one of the requirements for the improvement of the trimmer. Further, in the CMP process, the existing trimmer creates grooves on the existing polishing pad 400 by pressing and operating, so that the chemical polishing liquid can fill the grooves. Under the relative movement of the wafer and the existing polishing pad 400, the tiny abrasive particles in the chemical polishing liquid (or polishing liquid) polish the surface of the wafer and at the same time oxidize or corrode the metal; however, due to the effect of the wafer in the polishing process, the chemical polishing liquid will quickly lose due to the rotation of the centrifugal force, and the cost of the chemical polishing liquid accounts for more than 50% of all consumables in the CMP process, therefore, how to retain the polishing liquid on the existing polishing pad, it is necessary to create new pores on the existing trimmer, which is the second requirement for the improvement of the trimmer; in addition, in the CMP process, as Figure 26 As shown, in the chemical mechanical polishing process of the existing trimmer X and the wafer by pressing and operating on the polishing pad 400, as time accumulates, when the temperature of the existing polishing pad 400 exceeds 35℃, the material removal rate (MRR) variation will increase rapidly, which will affect the subsequent wafer polishing quality.

[0006] Further, in the CMP process, under the relative movement of the existing trimmer and the existing polishing pad 400, grooves and new surface fluff will be carved on the existing polishing pad 400; and controlling the protrusion 401 of the existing polishing pad 400 and reducing the overall roughness of the existing polishing pad 400 are the third requirements for the improvement of the trimmer.

[0007] On the other hand, in the CMP process, the existing trimmer creates grooves on the existing polishing pad 400 by pressing and operating; under the relative movement of the existing trimmer and the existing polishing pad 400, the existing polishing pad 400 will produce resistance, deformation and tearing; however, due to the deformation of the viscoelasticity of the existing polishing pad 400, the greater the angle of the cone of the existing trimmer, the greater the resistance to penetration into the existing polishing pad 400, which is difficult to control the correct depth of penetration into the existing polishing pad 400; and another component of the cone will form a protrusion 401 on the edge of the groove of the existing polishing pad 400, which will seriously affect the flatness of the wafer surface, therefore, the small protrusions on the diamond cone angle surface are sharp and protruding, which is beneficial to the penetration of the polishing pad downward, and reduces the deformation of the trimmer metal body and the polishing pad 400; at the same time, it can qualitatively / quantitatively depict the fourth dimension groove, avoiding the traditional polishing pad 400 method: a plastic micro-foaming injection molding technology, for example The supercritical micro-foaming injection molding polishing pad 400, after injection molding and cooling, forms pores of varying sizes, making it difficult to control the overall deformation during polishing. This becomes the fourth requirement for improving the dressing tool.

[0008] Please refer to the following: Figure 27 The stress-strain diagram shown can be derived from this information in a simplified manner using the following equations:

[0009] σ=Fc / A

[0010] Where σ is the applied stress, Fc is the compressive force, and A is the cross-sectional area of ​​the test material; for a constant rate of deformation, the strain is measured using the following equation:

[0011] ε=vΔt

[0012] Where ε is the strain, v is the downward velocity of the cone, Δt is equal to the deformation rate of the specimen, and after a certain period of time, a straight line in the elastic region, i.e. before the maximum applied load, is formed based on Hooke's law:

[0013] σ(t)=E·ε(Δt)

[0014] ε=v·Δt / L0

[0015] σ=E·ε(t)=E·v·Δt / L0

[0016] E = σ / ε

[0017] Where σ is stress, E is Young's modulus, ε(t) is time-varying strain, v is constant velocity, Δt is the elapsed time, and L0 is the original length.

[0018] However, although the relevant data can be obtained by performing calculations using the above-mentioned equations, the current operating mode cannot detect the surface texture of the existing polishing pad 400 or whether the high end of the cone of the existing dresser is worn in a timely manner. Adjustments can only be made when problems occur in subsequent processes, which will affect the quality of the wafers being polished during this period.

[0019] For example, although patents such as Taiwan Patent No. 436375B, Taiwan Patent Publication No. 202004886A, Taiwan Patent No. I813551, and Taiwan Patent No. I741865 disclose that the mechanical properties, surface topography, and porosity / bristle creation of the PU polyurethane of the existing conditioner for the existing polishing pad are helpful for polishing, there is still a need for improvement in the polishing liquid retention method and the way to effectively control the thermal expansion and poor surface texture of the conditioner and polishing pad caused by heating.

[0020] Further, the above-mentioned TW436375B, TW202004886A, TWI813551, and TWI741865 all explain that the mechanical properties, surface topography, and porosity / bristle creation of the PU polyurethane of the polishing pad by the diamond conditioner are helpful for polishing. Even so, the functions can only meet the needs of, for example, carving polishing pad grooves and removing debris. For the overall CMP process cost control (such as flatness), there is a lack of a polishing liquid retention method and an effective qualitative / quantitative control of the polishing pad groove. The conventional polishing pad method is supercritical microcellular injection molding, and after the polishing pad is cooled, holes of indefinite size are formed. SUMMARY

[0021] Therefore, the present inventors, in view of the shortcomings and deficiencies in the use of the existing CMP process, have developed the present application through continuous research and testing to improve the existing shortcomings.

[0022] The purpose of the present application is to provide a CMP process, device, and monitoring method that can easily penetrate the polishing pad and form regionalized co-high and co-planar carved polishing pad grooves, remove the glazed surface or dirt on the polishing pad, regenerate the bristles to make the polishing pad surface roughness uniform, and create the lateral topography of the polishing pad groove, which is beneficial for the CMP process, device, and monitoring method with the nourishment of the polishing liquid.

[0023] To achieve the above-mentioned purpose, the present application mainly provides a conditioner for a CMP process, characterized in that it is provided with:

[0024] a base plate;

[0025] at least one sheet body provided on one side of the base plate;

[0026] a modular grinding unit provided on the at least one sheet body, the modular unit being provided with a plurality of units, the units being arranged on the at least one sheet body in a spaced manner, and each unit having a protrusion, the protrusions of each unit having different heights.

[0027] Further, the conditioner for CMP process as mentioned above detects the height and position information of each single body by an optical imaging device, and performs height adjustment to complete the height and coplanarity of the conditioner, so that the height range is between 3um and 10um.

[0028] Further, the conditioner for CMP process as mentioned above, each single body is formed with at least one convex portion around the convex portion, and the height of the at least one convex portion is lower than that of the convex portion.

[0029] Preferably, the conditioner for CMP process as mentioned above, each single body is a conical body made of single crystal diamond, polycrystal diamond or material with Vickers hardness exceeding 1000kgf / mm2.

[0030] Preferably, the conditioner for CMP process as mentioned above, the single bodies are arranged on the at least one sheet body in linear interval, radial arrangement or matrix arrangement.

[0031] Preferably, the conditioner for CMP process as mentioned above, each convex portion and each at least one convex portion are formed on the single body by laser.

[0032] Preferably, the conditioner for CMP process as mentioned above, each convex portion and each at least one convex portion are formed on the single body by lamination.

[0033] Preferably, the conditioner for CMP process as mentioned above, the modularized grinding unit arranges the convex portions with gradually decreasing height from both sides to the middle.

[0034] Preferably, the conditioner for CMP process as mentioned above, the modularized grinding unit arranges the convex portions with gradually decreasing height from the middle to both sides.

[0035] The present application further provides a CMP process device, characterized in that it is provided with:

[0036] a body provided with a processing end and a processing platform;

[0037] a conditioner as mentioned above arranged on the processing end of the body, so that each single body on the at least one sheet body faces the processing platform; and

[0038] a polishing pad arranged on the processing platform of the body, which is polished by the conditioner.

[0039] The present application further provides a CMP process, characterized in that it is provided with:

[0040] preparing a CMP process device as mentioned above;

[0041] driving the conditioner to move and rotate towards the polishing pad via a processing end of the body; and

[0042] polishing the polishing pad via the convex portion of each of the single bodies of the conditioner to form a regionalized co-height, co-planar scribed polishing pad groove on the polishing pad, and creating a polishing pad groove lateral morphology on the polishing pad via the sub-convex portion of each of the single bodies.

[0043] The present application further provides a method for monitoring the polishing pad pores in a CMP process, characterized by comprising the following steps:

[0044] preparing a CMP process equipment as described above;

[0045] providing a lens module on the CMP process equipment, which is used for micro-feature observation by hyper-lens and surface 3D texturing and flatness monitoring by optical shearing interference;

[0046] completing polishing pad, slurry and wafer identification by refractive index, reflected light intensity and scattering data in cooperation with an AI system; and

[0047] judging the micro-features and monitoring the polishing pad pores by learning of the AI system.

[0048] By the above technical features, the highest point of the conditioner module for CMP process can easily penetrate the polishing pad, and the regionalized co-height, co-planar scribed polishing pad groove can be formed, the knife taper surface of the conditioner can remove the glazed surface or dirt on the polishing pad, and more fluff can be regenerated during the conditioning process, so that the polishing pad surface roughness is uniform, and the creation of the polishing pad groove lateral morphology during the conditioning process is beneficial to the polishing liquid retention, effectively retains the polishing liquid, effectively controls the thermal expansion of the conditioner and the polishing pad due to heating, and improves the surface texture, effectively reduces the overall CMP process cost. BRIEF DESCRIPTION OF DRAWINGS

[0049] Figure 1 is a perspective view of the conditioner for CMP process of the present application.

[0050] Figure 2 is a perspective view of the first preferred embodiment of the sheet body of the conditioner for CMP process of the present application.

[0051] Figure 3 is a partial enlarged perspective view of the second preferred embodiment of the sheet body of the conditioner for CMP process of the present application.

[0052] Figure 4 is a partial enlarged perspective view of the third preferred embodiment of the sheet body of the conditioner for CMP process of the present application.

[0053] Figure 5 is a top view of a third preferred embodiment of a sheet body of a conditioner for CMP process of the present application.

[0054] Figure 6 is a sectional side view of the third preferred embodiment of a sheet body of a conditioner for CMP process of the present application along the section line A-A.

[0055] Figure 7 is a partially enlarged sectional side view of the third preferred embodiment of a sheet body of a conditioner for CMP process of the present application.

[0056] Figure 8 is a partially enlarged sectional perspective view of a fourth preferred embodiment of a sheet body of a conditioner for CMP process of the present application.

[0057] Figure 9 is a partially enlarged sectional perspective view of a fifth preferred embodiment of a sheet body of a conditioner for CMP process of the present application.

[0058] Figure 10 is a partially enlarged perspective view of a sixth preferred embodiment of a sheet body of a conditioner for CMP process of the present application.

[0059] Figure 11 is a schematic view of an operation of a conditioner for CMP process of the present application in use with a polishing pad.

[0060] Figure 12 is another schematic view of an operation of a conditioner for CMP process of the present application in use with a polishing pad.

[0061] Figure 13 is a top view of another embodiment of a conditioner for CMP process of the present application.

[0062] Figure 14 is a partially enlarged perspective view of a sheet body of another embodiment of a conditioner for CMP process of the present application.

[0063] Figure 15 is a partially enlarged perspective view of a sheet body of still another embodiment of a conditioner for CMP process of the present application.

[0064] Figure 16 is another partially enlarged perspective view of a sheet body of still another embodiment of a conditioner for CMP process of the present application.

[0065] Figure 17 is a schematic view of an operation of a CMP process apparatus of the present application for polishing a wafer.

[0066] Figure 18 is another schematic view of an operation of a CMP process apparatus of the present application for polishing a wafer.

[0067] Figure 19 is another operation schematic diagram of the CMP process trimmer for polishing pad trimming.

[0068] Figure 20 is another operation schematic diagram of the CMP process trimmer for polishing pad trimming.

[0069] Figure 21 is an operation schematic diagram of the lens module of the CMP process equipment.

[0070] Figure 22 is a three-dimensional appearance schematic diagram of the lens module of the CMP process equipment.

[0071] Figure 23 is a three-dimensional appearance schematic diagram of the lens module of the CMP process equipment.

[0072] Figure 24 is an operation interface schematic diagram of the AI system of the CMP process equipment for image recognition.

[0073] Figure 25 is an operation schematic diagram of the CMP process trimmer for polishing pad trimming.

[0074] Figure 26 is a relationship diagram of material removal rate and temperature when the CMP process trimmer is used for polishing pad trimming.

[0075] Figure 27 is a stress-strain relationship diagram when the CMP process trimmer is used for polishing pad trimming. DETAILED DESCRIPTION

[0076] The technical means adopted by the present application to achieve the predetermined invention purpose is further described below in conjunction with the drawings and the preferred embodiments of the present application.

[0077] The present application aims to provide a CMP process trimmer and a method and process for creating and monitoring polishing pad pores.

[0078] The present application designs and manufactures single crystal / multicrystal diamond particles or Vickers hardness exceeding 1000 kgf / mm2 hard material modules on the trimmer, which meets the following functions of the trimmer:

[0079] One is that the highest point of the module on the trimmer can easily penetrate the polishing pad and the localized groove on the polishing pad is high and coplanar;

[0080] Among them, the specific description of the cone being high or coplanar in the CMP process can be divided into polishing pad and trimmer:

[0081] 1. Common height and common plane of polishing pads: After the polishing pad has been dressed by the dresser, the raised areas of the polishing pad are plowed out, such as... Figure 25 As shown: When the dressing tool's cone-shaped high point 310 is used to plow the polishing pad 400, the cone-shaped high point 310 on the dressing tool first approaches the polishing pad 400 from the far end. With the downward stroke W, the rotation of the polishing pad 400, and the S-direction generated by the swing arm movement of the dressing tool, it begins to penetrate the polishing pad 400. The outward extension of the cone-shaped high point 310 forces the polishing pad 400 to gradually deform under elastic and plastic stress. Due to the interaction between the plastic flow of the polishing pad 400 and the shape of the cone-shaped high point 310, the protrusion 401 generates a (plow-up) height. This height and shape depend entirely on the shape of the cone-shaped high point 310, the downward pressure, the polishing pad rotation speed, the swing arm movement (including the dressing tool rotation speed), and the physical properties of the polishing pad 400. When several cones of equal height 310 are etched on the polishing pad 400 under the aforementioned movement, regionally shared or coplanar protrusions 401 will be generated, such as... Figure 8 As shown, the cone's highest point 310 extends outwards during the depiction process, forming protrusions 3101, 3111, and 3301 (textural pattern) and cone faces 3102, 3112, and 3302 (surface morphology). Figure 9 The protrusion 3101 shown is Figure 8 The deformation of protrusion 3101; strictly speaking, wafer grinding within a 12" (300mm range) area is quite large, and CMP equipment relies on the large-area layout of polishing pads 400 for wafer grinding. However, within the polishing pad 400 diameter range (greater than 700mm), the wear rate changes with the radius of curvature, thus affecting the overall wafer flatness. Therefore, protrusions 401 with shared height or shared plane height of the polishing pads 400 are needed to achieve high-precision wafer flatness. The micro-slits on these protrusions 401 and the abrasive on the polishing fluid can then grind the wafer.

[0082] 2. The co-height and co-planar of the conditioner: The conditioner discussed in this invention is not made by brazing, but by post-processing high-hardness materials to form the conditioner. For example: ultrafast laser processing, electron beam, plasma, electrical discharge machining, etc. For example: using ultrafast laser (1064nm, 1030nm, <532nm, etc., the shorter the wavelength, the higher the processing precision; the scanning frequency is nanosecond < picosecond < femtosecond, the higher the frequency, the lower the cumulative energy, and the smaller the material changes. Single crystal diamond or polycrystalline diamond or Mohs hardness exceeding 9.5 materials are processed to remove the topography. Because the ultrafast laser can change the processing path by changing the position of the mirror and the processing object on the 4-5 axis machine, it can process high-hardness materials in any topography and region, and the high-precision optical system configuration (such as the larger N.A of the optical lens group) is beneficial. For example, the outer circle of the diamond group is higher than the second / third inner circle of the diamond group, and each group in each area must establish full co-height (co-height range is between 3um-10um), same topography processing to form the convex 401 co-plane of the polishing pad 400, even 3D above topography precision processing is easier to control. For example, the co-height difference between the first area diamond group and the second area diamond group is 5-20um, which is not a constant number, but depends on the wafer flatness requirement; further monitor the polishing pad 400 regional co-plane result. If a 12" wafer is divided into 8 areas by radius, then the polishing pad 400 must cover at least 8 areas above the wafer area, then Area 8 and Area 7 are monitored for flatness, then the conditioner forms a co-plane for Area 8 and Area 7; that is, according to the flatness of the polishing pad 400, the height of the diamond conditioner in each area is adjusted (laser compensation) to form the convex 401 co-plane of the polishing pad 400 Area 8 and Area 7.

[0083] 3. According to the above description, the conditioner can be set with regional co-height and co-plane at the beginning. After the polishing pad 400 is conditioned and the wafer is polished, the flatness monitoring statistical value is obtained, and the laser real-time processing data of the diamond conditioner regional co-height and co-plane is obtained. After the diamond conditioner is laser real-time conditioned, it will form a wafer planarization target, so the height of the diamond conditioner in each area after laser real-time conditioning may not be equal to the original height, and Area 7 may be lower than Area 8 and Area 6.

[0084] Secondly, the knife taper surface removes the glazed surface or dirt on the polishing pad 400 (Glazing);

[0085] Thirdly, it regenerates more fluff to make the surface roughness of the polishing pad 400 uniform; and

[0086] Fourthly, it creates the side topography of the polishing pad 400 groove, which is beneficial to the polishing liquid.

[0087] Please refer to the following figures for better understanding of the present application. Figures 1 to 3 As shown in the figures, wherein, Figure 1 is a schematic diagram of the appearance of the embodiment of the dresser 10 of the present application, Figure 2 is a schematic diagram of the appearance of the embodiment of the modular cone configuration on the dresser 10 of the present application, and Figure 3 is a schematic diagram of the appearance of the embodiment of the modular cone high point configuration on the dresser 10 of the present application; in some embodiments, the dresser 10 (or diamond disc) of the present application is divided into several parts; the first is the base plate 20 (metal body, generally corrosion-resistant stainless steel metal such as 316, 304) that can be fixed on the swing arm of the CMP machine, the second is the plurality of sheet bodies 30 protruding towards the polishing pad on the metal body, which can also be coated with a diamond-like film, a resin, or a locally acid- and alkali-resistant material, the third is the combination of the sheet body 30 and the metal body, and the fourth is the single crystal / multicrystal diamond or the sheet body (i.e. monomer) with a Vickers hardness exceeding 1000 kgf / mm2 on the sheet body 30, which has various single crystal / multicrystal diamonds or sheet bodies with a Vickers hardness exceeding 1000 kgf / mm2 or a matrix of single sheet bodies to form a modular high-hardness cone and the cone height, morphology, and mutual distance, which are not limited here.

[0088] Among them, each sheet body 30 is arranged on the base plate 20 in a ring-shaped interval, and each sheet body 30 is provided with a modular grinding unit 40, and the modular grinding unit 40 is provided with a plurality of monomers 41, each monomer 41 is provided with a protruding part 411, and each protruding part 411 can be a cone, which can be arranged on the sheet body 30 in a linear interval and a radial manner as shown in Figure 1 and Figure 2 , or arranged in a matrix manner as shown in Figure 3 , but not limited to the above-mentioned arrangement manner, and can also be randomly distributed on the sheet body 30.

[0089] Further, the cone of the dresser 10 of the present application includes diamond, silicon dioxide, boron carbide, and other hard materials with a Vickers hardness exceeding 1000 kgf / mm2, and the cone of the dresser 10 is away from the base plate 20, but is not limited to a sharp cone, i.e. point, surface, or line end, etc.

[0090] In the above-mentioned embodiments, the base plate 20 of the dresser 10 of the present application can be covered with a diamond-like film or a gel by evaporation or sputtering to avoid the oxidation and corrosion of the metal by the polishing liquid, thereby avoiding the adverse effects on the wafer polishing; further, in the above-mentioned embodiments, the plurality of sheet bodies 30 on the dresser 10 of the present application can be covered with a diamond-like film or a gel by evaporation or sputtering to avoid the oxidation and corrosion of the metal by the polishing liquid, thereby avoiding the adverse effects on the wafer polishing.

[0091] In the above embodiments, the single crystal / polycrystalline diamond or Vickers hardness over 1000kgf / mm2 sheet (i.e. monomer, 41) on the sheet 30 has various matrix and modular conical height topography and mutual spacing; wherein the single crystal / polycrystalline diamond or Vickers hardness over 1000kgf / mm2 sheet (i.e. monomer, 41) can be single crystal / polycrystalline diamond or Vickers hardness over 1000kgf / mm2 sheet modular topography (Geometric configuration) and high engraving with femtosecond laser (point or line laser).

[0092] In the above embodiments, the femtosecond laser (point or line laser), the line laser is configured by a diffraction element to form a laser beam into 0th, ±1st, ±2nd, ±3rd… and other multi-point energy equivalent point light source into line light source, or matrix point light source, to engrave the topography and height of the single crystal / polycrystalline diamond or Vickers hardness over 1000kgf / mm2 sheet in each direction, wherein, as shown in Figure 4 , the appropriate laser trajectory can be set by computer drawing to create the primary cone (i.e. convex part 411) and the secondary cone (i.e. secondary convex part 412) , as shown in Figure 5 is a top view of the modifier 10 conical body after laser processing, Figure 6 is a side view of the modifier conical body 10 along the A-A section line, Figure 5 is a side view of the modifier conical body 10 along the A-A section line, Figure 7 is a side view of the modifier conical body 10 along the A-A section line.

[0093] As shown in Figure 8 and Figure 9 , it is a processing section view of the conical body topography by a composite function type femtosecond laser; and the angle between the knife conical peak 320 and the surface 330 is at least 1 degree or more; as shown in Figure 10 , it is another conical body appearance diagram after the composite function type femtosecond laser. In Figure 8 and 9 , 3101 / 3111 etc. are the conical body side of the conical peak 310, so the polished pad with the groove side topography can accommodate more polishing liquid, and can continuously send out the polishing liquid in the pores between the wafer and the polishing pad by compression and expansion during the grinding process. Therefore, the lateral topography of the diamond conical body becomes the polishing liquid remaining in the polishing pad, which is the second element of the diamond modifier. In Figure 9 , H1 is one of the highest points in the modifier area, H3 is the lowest position of the sheet 30, and H2 / H4 is the protrusion height on the sheet 30, which retains more polishing liquid through topography and surface tension.

[0094] In the above embodiments, the single crystal / multicrystal diamond on the sheet body 30 has various diamond grain height topographies and mutual spacings; the single crystal / multicrystal diamond sheet is coated with diamond powder on the filaments, the crystal lattice is 111, and the single crystal / multicrystal diamond (crystal lattice 100) topography and height are engraved; the diamond material is removed by 111 crystal lattice hardness wear resistance higher than 100 crystal lattice; and the filament coated with 111 crystal lattice diamond abrasive is driven by the wheel structure to new filaments for 100 single crystal topography grinding.

[0095] In the above embodiments, the single crystal / multicrystal diamond on the sheet body 30 has various diamond grain height topographies and mutual spacings; the single crystal / multicrystal diamond on the sheet body 30 has various diamond grain height topographies and mutual spacings; the single crystal / multicrystal diamond sheet is coated with diamond powder on the filaments, the crystal lattice is 111, and the single crystal / multicrystal diamond (crystal lattice 100) topography and height are engraved; the diamond material is removed by 111 crystal lattice hardness wear resistance higher than 100 crystal lattice; and the filament coated with 111 crystal lattice diamond abrasive is driven by the wheel structure to new filaments for 100 single crystal topography grinding.

[0096] In the above embodiments, the single crystal / multicrystal diamond on the sheet body 30 has various diamond grain height topographies and mutual spacings; the single crystal / multicrystal diamond on the sheet body 30 has various diamond grain height topographies and mutual spacings; the single crystal / multicrystal diamond sheet is coated with diamond powder on the filaments, the crystal lattice is 111, and the single crystal / multicrystal diamond (crystal lattice 100) topography and height are engraved; the diamond material is removed by 111 crystal lattice hardness wear resistance higher than 100 crystal lattice; and the filament coated with 111 crystal lattice diamond abrasive is driven by the wheel structure to new filaments for 100 single crystal topography grinding.

[0097] In the above embodiments, the single crystal / multicrystal diamond on the sheet body 30 has various diamond grain height topographies and mutual spacings; the single crystal / multicrystal diamond on the sheet body 30 has various diamond grain height topographies and mutual spacings; the single crystal / multicrystal diamond sheet is coated with diamond powder on the filaments, the crystal lattice is 111, and the single crystal / multicrystal diamond (crystal lattice 100) topography and height are engraved; the diamond material is removed by 111 crystal lattice hardness wear resistance higher than 100 crystal lattice; and the filament coated with 111 crystal lattice diamond abrasive is driven by the wheel structure to new filaments for 100 single crystal topography grinding.

[0098] In the above embodiments, the single crystal / multicrystal diamond on the sheet body 30 has various diamond grain height topographies and mutual spacings; the single crystal / multicrystal diamond on the sheet body 30 has various diamond grain height topographies and mutual spacings; the single crystal / multicrystal diamond sheet is coated with diamond powder on the filaments, the crystal lattice is 111, and the single crystal / multicrystal diamond (crystal lattice 100) topography and height are engraved; the diamond material is removed by 111 crystal lattice hardness wear resistance higher than 100 crystal lattice; and the filament coated with 111 crystal lattice diamond abrasive is driven by the wheel structure to new filaments for 100 single crystal topography grinding. Figure 11 In the above embodiments, the single crystal / multicrystal diamond on the sheet body 30 has various diamond grain height topographies and mutual spacings; the single crystal / multicrystal diamond on the sheet body 30 has various diamond grain height topographies and mutual spacings; the single crystal / multicrystal diamond sheet is coated with diamond powder on the filaments, the crystal lattice is 111, and the single crystal / multicrystal diamond (crystal lattice 100) topography and height are engraved; the diamond material is removed by 111 crystal lattice hardness wear resistance higher than 100 crystal lattice; and the filament coated with 111 crystal lattice diamond abrasive is driven by the wheel structure to new filaments for 100 single crystal topography grinding.

[0099] In the above embodiments, the single crystal / multicrystal diamond on the sheet body 30 has various diamond grain height topographies and mutual spacings; the single crystal / multicrystal diamond on the sheet body 30 has various diamond grain height topographies and mutual spacings; the single crystal / multicrystal diamond sheet is coated with diamond powder on the filaments, the crystal lattice is 111, and the single crystal / multicrystal diamond (crystal lattice 100) topography and height are engraved; the diamond material is removed by 111 crystal lattice hardness wear resistance higher than 100 crystal lattice; and the filament coated with 111 crystal lattice diamond abrasive is driven by the wheel structure to new filaments for 100 single crystal topography grinding. Figure 12 In the above embodiments, the single crystal / multicrystal diamond on the sheet body 30 has various diamond grain height topographies and mutual spacings; the single crystal / multicrystal diamond on the sheet body 30 has various diamond grain height topographies and mutual spacings; the single crystal / multicrystal diamond sheet is coated with diamond powder on the filaments, the crystal lattice is 111, and the single crystal / multicrystal diamond (crystal lattice 100) topography and height are engraved; the diamond material is removed by 111 crystal lattice hardness wear resistance higher than 100 crystal lattice; and the filament coated with 111 crystal lattice diamond abrasive is driven by the wheel structure to new filaments for 100 single crystal topography grinding.

[0100] The monocrystal diamond / polycrystal diamond or the Vickers hardness over 1000 kgf / mm2 sheet body on the sheet body 30 can be fixed on a substrate 20, as shown in FIG. 4. As shown in FIG. 5, the sheet body 30 is partially enlarged in a conical shape. As shown in FIG. 6, the sheet body 30 is partially enlarged in a conical shape. As shown in FIG. 7, the sheet body 30 is partially enlarged in a conical shape. Figure 13 The monocrystal diamond / polycrystal diamond or the Vickers hardness over 1000 kgf / mm2 sheet body on the sheet body 30 can be fixed on a substrate 20, as shown in FIG. 4. As shown in FIG. 5, the sheet body 30 is partially enlarged in a conical shape. As shown in FIG. 6, the sheet body 30 is partially enlarged in a conical shape. As shown in FIG. 7, the sheet body 30 is partially enlarged in a conical shape. 2 The monocrystal diamond / polycrystal diamond or the Vickers hardness over 1000 kgf / mm2 sheet body on the sheet body 30 can be fixed on a substrate 20, as shown in FIG. 4. As shown in FIG. 5, the sheet body 30 is partially enlarged in a conical shape. As shown in FIG. 6, the sheet body 30 is partially enlarged in a conical shape. As shown in FIG. 7, the sheet body 30 is partially enlarged in a conical shape. Figure 14 The monocrystal diamond / polycrystal diamond or the Vickers hardness over 1000 kgf / mm2 sheet body on the sheet body 30 can be fixed on a substrate 20, as shown in FIG. 4. As shown in FIG. 5, the sheet body 30 is partially enlarged in a conical shape. As shown in FIG. 6, the sheet body 30 is partially enlarged in a conical shape. As shown in FIG. 7, the sheet body 30 is partially enlarged in a conical shape. Figure 15 The monocrystal diamond / polycrystal diamond or the Vickers hardness over 1000 kgf / mm2 sheet body on the sheet body 30 can be fixed on a substrate 20, as shown in FIG. 4. As shown in FIG. 5, the sheet body 30 is partially enlarged in a conical shape. As shown in FIG. 6, the sheet body 30 is partially enlarged in a conical shape. As shown in FIG. 7, the sheet body 30 is partially enlarged in a conical shape. Figure 16 The monocrystal diamond / polycrystal diamond or the Vickers hardness over 1000 kgf / mm2 sheet body on the sheet body 30 can be fixed on a substrate 20, as shown in FIG. 4. As shown in FIG. 5, the sheet body 30 is partially enlarged in a conical shape. As shown in FIG. 6, the sheet body 30 is partially enlarged in a conical shape. As shown in FIG. 7, the sheet body 30 is partially enlarged in a conical shape.

[0101] In a specific embodiment, the monocrystal diamond / polycrystal diamond or the Vickers hardness over 1000 kgf / mm2 sheet body on the sheet body 30 can be detected by an optical image device to provide height, conical x, y position information after being polished by a polisher in a single system device, so that the height and coplanar surface of the polisher 10 can be polished by a laser light.

[0102] Therefore, the lateral shape 3101 / 3111 of the new groove generated by the present application can allow the polishing pad 50 to contain more polishing liquid, and the polishing liquid can be continuously sent out from the pores between the wafer and the polishing pad 50 during the polishing process. Therefore, the lateral shape of the conical body on the polisher 10 becomes the polishing liquid remaining in the polishing pad 50. As shown in FIG. 11, the convex part 411 (conical body) can perform groove cutting, glaze scraping, and create fluff on the polishing pad 50. As shown in FIG. 12, the sub-convex part 412 (sub-conical body) can perform pore creation on the side of the groove on the polishing pad 50. As shown in FIG. 13, the side edge of the sub-conical body can create pores on the side of the groove on the polishing pad 50. Figure 17 Figure 18 Figure 18 19

[0103] By the above technical features, the polisher 10 of the present application can contain more polishing liquid after cutting the polishing pad 50, form a circulating cooling effect, and inhibit the thermal expansion of the polishing pad 50 to ensure the polishing and planarization results of the wafer. Figure 26 ​​​​As shown in the temperature and material removal rate relationship diagram, due to the 3D or more operation mode of the straight line and the relative movement between the dresser 10 and the polishing pad 50, the dresser 10 can form a lateral groove with a 3D or more structure on the polishing pad 50, so that more polishing liquid can be contained, and the overall material removal rate (MRR) is more stable than the existing dresser X.

[0104] When the dresser 10 is used, it must be inserted into the polishing pad 50 through the conical high point 310. At this time, the deformation amount increases with the increase of the contact surface area in the downward direction, but it is not easy to cause tearing, so it is necessary to tear through the small conical convex point 3101 first, and then tear the polishing pad 50 in the downward direction. As shown in Figure 20 As shown, due to the relative movement between the polishing pad 50 and the dresser 10, the raised polishing pad hair convex material (arrow direction) will be arranged with the height of the knife conical high edge 320; forming a method of pressing and removing the polishing pad hair convex, and then creating more fluff.

[0105] Therefore, the small high angle 3101 / 3111 on the diamond conical angle surface is sharp and protruding, which is beneficial to the precise depth penetration of the polishing pad 50 downward and laterally. It can also reduce the design of the conical angle of the dresser 10; the conical angle is smaller, and more conical bodies can be increased per unit area.

[0106] Importantly, the present application can timely find out whether the surface texture, flatness of the polishing pad 50 and the conical high end of the dresser 10 are worn, which will directly transparentize the CMP process. As shown in Figure 21 、 Figure 22 and Figure 23 As shown in the CMP device, the lens module 60 (i.e. optical imaging device) is externally hung upward (for observing the wear state of the dresser conical body) and downward (for observing the surface 3D texture of the polishing pad). The lens module 60 uses a hyperlens 61 to observe micro features and uses an optical shear interference method to monitor the surface 3D texture. In addition, an AI system (Weka / Deeplearnin4j / Saliency Map Viewer) is used to observe the focus area of the trained model in the input image, that is, the so-called "model vision". The model will judge the category of the input image according to these focus areas, and use object refractive index, reflected light intensity, scattering data to identify polishing pad, grinding liquid, etc. After that, the hyperfast laser is used to compensate the real-time area topography of the dresser to achieve high flatness grinding of the wafer. As shown in Figure 22 and Figure 23As shown, the optical lens group 60 is formed by one or more super- lenses 61, and focuses on the shearing optical diffraction element by laser light. The CCD / CMOS sensor detects the shearing interference results of the diffraction element at a fixed distance, and performs 3D image reconstruction based on the shearing interference results. In this way, the polishing pad surface geometry (flatness) and groove depth and uniformity can be observed, so as to adjust the CMP equipment conditioner area height and polishing pad motion parameters and statistical values. The total thickness of the optical lens group 60 is <50mm, which can be embedded in any position of the equipment for online detection in a small space.

[0107] The following describes an embodiment. Initially, the lens module 60 is used to identify the polishing pad 50, establish standard environment information such as reflectivity, light intensity, scattering, etc. (at this time, no polishing liquid is provided for the first conditioner 10 to polish the polishing pad 50), and record and store it as reference 1. The lens module 60 is used again to observe the polishing pad 50 in the environment provided with the polishing liquid (at this time, no wafer is polished), and record and store it as reference 2. After identifying the unpolished and polished polishing pad 50 based on references 1 and 2, the AI system starts to train and learn to identify the surface features of the polishing pad 50 and the polishing liquid. This is the first stage of learning.

[0108] In the second stage, the wafer 70 is polished, and the periodic reciprocating detection position is judged based on the data from the first stage. For example, the image capturing position is selected before the polishing pad 50 is conditioned, such as the 3, 6, 9, and 12 o'clock positions at a certain diameter. The position is compared and learned, and the image is measured. Through continuous learning of the AI system, the uneven area can be judged based on the small features. Figure 24 As shown, the left side of the figure shows the actual state (original input image) of the hole (uneven area) on the polishing pad. After learning, the AI system identifies the feature as a point-like bright area (as shown in the middle figure, which shows the key area of interest of the model, i.e. the saliency map). After superimposing the left side of the figure and the middle figure, the superimposed result shown in the right side of the figure is obtained, and the image is judged based on this figure. This facilitates comparison of the difference between the area of interest of the human eye and the model vision, and timely correction of the polishing parameters for re-polishing of the uneven area. In addition, multiple images are captured to provide the software interface (Deeplearning UI interface) of the AI system for model training, verification, and parameter adjustment. For example, part of the images are used for training and learning of the AI system, and the remaining images are used for verification of the AI system. Preferably, 60-70% of the images are used for training and learning, and 30-40% of the images are used for verification.

[0109] The optical lens module 60 is preferably hung on the rocker arm 11 of the conditioner 10. Or preferably, it is observed downward from the opening (not shown) of the base plate 20 of the conditioner 10. Figure 21 、 Figure 22 andFigure 23 As shown in FIG. 1, the optical lens module 60 is formed by one or more aspheric lenses 61 and focuses on a shearing optical diffraction element by laser light. The CCD / CMOS sensor and the diffraction element detect the shearing interference results at a fixed distance, and the 3D image is reconstructed by the shearing interference results. In this way, the polishing pad groove depth and surface roughness can be observed, so as to adjust the motion parameters of the conditioner 10 and the polishing pad 50 in the CMP equipment. As shown in FIG. 2, the optical lens module 60 is used for on-line detection in a narrow space, and the total thickness is less than 50 mm (mm) and can be embedded in any position of the equipment. The optical lens module 60 can also be provided with a self-cleaning system, such as air, liquid, ultrasonic wave, etc. The self-cleaning action can be generated by software when the lens is dirty. Figure 21 As shown in FIG. 1, the optical lens module 60 is formed by one or more aspheric lenses 61 and focuses on a shearing optical diffraction element by laser light. The CCD / CMOS sensor and the diffraction element detect the shearing interference results at a fixed distance, and the 3D image is reconstructed by the shearing interference results. In this way, the polishing pad groove depth and surface roughness can be observed, so as to adjust the motion parameters of the conditioner 10 and the polishing pad 50 in the CMP equipment. As shown in FIG. 2, the optical lens module 60 is used for on-line detection in a narrow space, and the total thickness is less than 50 mm (mm) and can be embedded in any position of the equipment. The optical lens module 60 can also be provided with a self-cleaning system, such as air, liquid, ultrasonic wave, etc. The self-cleaning action can be generated by software when the lens is dirty.

[0110] In the present application, the cone is not limited to the continuous or discontinuous surface of geometric shape. The cone is integrated in the sheet body 30; wherein, the cone can be formed by subtractive process such as laser removal of the sheet body or by additive growth of the cone morphology from the sheet body 30; the cone tip, knife cone or the corresponding (point, line, surface) of the cone are not limited; in addition, the substrate 20 refers to the metal body of the conditioner 10, one end of which is connected and fixed to the equipment, and the other end is the sheet body 30 and the cone on the sheet body.

[0111] The above description is only the preferred embodiment of the present application, and does not limit the present application in any form. Although the present application has been disclosed as above with the preferred embodiment, it is not intended to limit the present application. Any skilled person in the art can make some changes or modifications to the above disclosed technical content without departing from the scope of the technical solution of the present application, and any simple modification, equivalent change and modification of the above embodiment based on the technical essence of the present application are still within the scope of the technical solution of the present application.

Claims

1. A conditioner for use in a CMP process, characterized by Provided are: a substrate; at least one sheet provided on one side of the substrate; and a modular polishing unit provided on the at least one sheet, the modular unit being provided with a plurality of units, the units being spaced apart on the at least one sheet, and each of the units having a protrusion, the protrusions of each of the units having different heights.

2. The conditioner of claim 1, wherein The height and position information of the protrusions of each of the units are detected by an optical imaging device, and the protrusions are trimmed to complete the regionalization, co-height and co-planarization of the trimmer, so that the co-height range is between 3 um and 10 um.

3. The conditioner of claim 2, wherein Each of the units forms at least one protrusion around the protrusion, and the height of the at least one protrusion is lower than the height of the protrusion.

4. The conditioner of claim 3, wherein Each of the monomers is a monocrystal diamond, a polycrystal diamond or a conical body made of a material with a Vickers hardness exceeding 1000 kgf / mm 2 2.

5. The conditioner of claim 4, wherein The units are arranged in a linearly spaced, radially arranged or matrix arranged manner on the at least one sheet.

6. The conditioner of claim 5, wherein Each of the protrusions and the at least one protrusion is formed on the unit by laser.

7. The conditioner of claim 5, wherein Each of the protrusions and the at least one protrusion is formed on the unit by lamination.

8. The conditioner of claim 1, wherein The modular polishing unit arranges the protrusions with gradually decreasing heights from both sides to the middle.

9. The conditioner of claim 1, wherein The modular polishing unit arranges the protrusions with gradually decreasing heights from the middle to both sides.

10. A CMP process apparatus characterized by Provided are: a body provided with a processing end and a processing platform; a trimmer as claimed in any one of claims 2 to 9, the trimmer being provided on the processing end of the body, so that each of the units on the at least one sheet faces the processing platform; and a polishing pad provided on the processing platform of the body, the polishing pad being polished by the trimmer.

11. A CMP process characterized by Provided are: preparing a CMP process equipment as claimed in claim 10; driving the trimmer to move and rotate towards the polishing pad through the processing end of the body; and polishing the polishing pad through the protrusions of each of the units of the trimmer, forming regionalized co-height, co-planarization grooves on the polishing pad, and forming the lateral morphology of the polishing pad grooves on the polishing pad through the secondary protrusions of each of the units.

12. A method for monitoring the porosity of a polishing pad in a CMP process, characterized by Provided are: preparing a CMP process equipment as claimed in claim 10; providing a lens module on the CMP process equipment, the lens module observing micro-features by hyper-lens and monitoring surface 3D texture and flatness by optical shearing interference; completing the identification of the polishing pad, the polishing liquid and the wafer by the refractive index, the reflected light intensity and the scattering data through an AI system; and judging the micro-features and monitoring the polishing pad pores through the learning of the AI system.

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