Electronic equipment, magnetoresistive device and preparation method of magnetoresistive device

Abstract

The invention discloses electronic equipment, a magnetoresistive device and a preparation method of the magnetoresistive device. The magnetoresistive device includes: a substrate; the magnetic response device is arranged on one side of the substrate and comprises a magnetic functional layer; the inductance coil and the magnetic response device are positioned on the same side of the substrate; the inductance coil comprises a first wire and a second wire, and the second wire is located on the side, back on to the substrate, of the first wire; the inductance coil further comprises a first connecting wire used for connecting the first wire and the second wire. Wherein in the thickness direction of the substrate, the lower surface of the magnetic functional layer is higher than the lower surface of the first wire, and the upper surface of the magnetic functional layer is lower than the upper surface of the second wire.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of magnetoresistive devices, and particularly relates to an electronic device, a magnetoresistive device and a preparation method thereof. BACKGROUND

[0002] With the development of science and technology, magnetoresistive devices have been widely concerned in the field of integrated circuits, and are a kind of semiconductor or magnetic thin film device that works by using the physical phenomenon that the resistance value of a material changes with an external magnetic field. The core function of the magnetoresistive device is "magnetic-electric conversion", that is, converting magnetic field information into a measurable electrical signal.

[0003] At present, the existing magnetoresistive device still needs to be improved. SUMMARY

[0004] The purpose of the present application is to provide an electronic device, a magnetoresistive device and a preparation method of the magnetoresistive device.

[0005] The present application discloses a magnetoresistive device, comprising: a substrate; a magnetic response device provided on one side of the substrate and comprising a magnetic functional layer; an inductor coil located on the same side of the substrate as the magnetic response device; the inductor coil comprises a first trace and a second trace, the second trace is located on the side of the first trace away from the substrate; the inductor coil further comprises a first connecting line for connecting the first trace and the second trace; wherein, in the thickness direction of the substrate, the lower surface of the magnetic functional layer is higher than the lower surface of the first trace, and the upper surface of the magnetic functional layer is lower than the upper surface of the second trace.

[0006] In some optional embodiments, the magnetic response device further comprises: a first electrode provided on the side of the magnetic functional layer facing the substrate; the first trace and the first electrode are provided in the same layer.

[0007] In some optional embodiments, the magnetic response device further comprises: a second electrode provided on the side of the magnetic functional layer away from the substrate; a first lead-out portion provided on the side of the second electrode away from the substrate; the second trace and the first lead-out portion are provided in the same layer, and the material of the first lead-out portion is different from that of the second electrode.

[0008] In some optional embodiments, the magnetic response device further comprises: a second lead-out portion located on the same side of the magnetic functional layer as the first lead-out portion; the second lead-out portion and the first electrode overlap in the orthographic projection on the substrate; and a second connecting line located between and connecting the first electrode and the second lead-out portion.

[0009] In some alternative embodiments, the second lead-out portion is arranged on the same layer as the first lead-out portion, and the height of the first connecting line is the same as the height of the second connecting line.

[0010] In some alternative embodiments, the number of the inductive coils is multiple, and the orthographic projection of the multiple inductive coils on the substrate surrounds the orthographic projection of the magnetic functional layer on the substrate.

[0011] In some alternative embodiments, the number of the first traces is multiple, and the first traces are distributed along a first direction; the extension direction of the first traces intersects the first direction; the number of the second traces is multiple, and the second traces are distributed along the first direction; the extension direction of the second traces intersects the first direction and intersects the extension direction of the first traces; for any second trace, one end of the second trace overlaps the orthographic projection of the end of one of the two adjacent first traces on the substrate, and the other end of the second trace overlaps the orthographic projection of the end of the other of the two adjacent first traces on the substrate; in the first direction, the magnetic functional layer is located on one side of the inductive coil.

[0012] In some alternative embodiments, the number of the inductive coils is two, and in the first direction, the two inductive coils are located on two sides of the magnetic functional layer.

[0013] The present application also discloses a preparation method of a magnetoresistive device, comprising:

[0014] providing a substrate;

[0015] forming a first insulating layer on one side of the substrate;

[0016] forming a first conductive layer, a magnetic functional material layer and a second conductive layer on the first insulating layer in sequence in a direction away from the substrate;

[0017] patterning the second conductive layer and the magnetic functional material layer to form a second electrode and a magnetic functional layer; the orthographic projection of the magnetic functional layer on the substrate partially overlaps the orthographic projection of the second electrode on the substrate;

[0018] patterning the first conductive layer to form a first electrode and a plurality of first traces; the orthographic projection of the magnetic functional layer on the substrate overlaps the orthographic projection of the first electrode on the substrate;

[0019] forming a second insulating layer covering the first electrode and the plurality of first traces, and the upper surface of the second insulating layer is flush with the upper surface of the second electrode;

[0020] forming a plurality of first openings and second openings on the second insulating layer, the second openings exposing the first electrodes, each of the first openings exposing one end of one of the first traces;

[0021] forming first connecting lines in the first openings and second connecting lines in the second openings;

[0022] forming a third conductive layer covering the second insulating layer;

[0023] patterning the third conductive layer to form a first lead-out portion, a second lead-out portion, and a plurality of second traces of an inductor coil, the first lead-out portion being disposed on a side of the second electrode facing away from the substrate, the second lead-out portion covering the second connecting lines, and two ends of the second traces being connected to two of the first connecting lines, respectively.

[0024] The application also discloses an electronic device comprising the magnetoresistive device.

[0025] It should be understood that the general description above and the detailed description below are only exemplary and explanatory, and cannot limit the present specification. BRIEF DESCRIPTION OF DRAWINGS

[0026] The accompanying drawings incorporated in and forming a part of the specification, illustrate embodiments consistent with the present specification and serve to explain the principles of the present specification, together with the description.

[0027] Figure 1 A schematic view of a method for manufacturing a magnetoresistive device according to the present application after forming a second conductive layer.

[0028] Figure 2 A schematic view of a method for manufacturing a magnetoresistive device according to the present application after forming a magnetic functional layer.

[0029] Figure 3 A schematic view of a method for manufacturing a magnetoresistive device according to the present application after forming a second insulating layer.

[0030] Figure 4 A schematic view of a method for manufacturing a magnetoresistive device according to the present application after forming first connecting lines and second connecting lines.

[0031] Figure 5 A schematic view of a method for manufacturing a magnetoresistive device according to the present application after forming a third conductive layer.

[0032] Figure 6 A schematic view of a magnetoresistive device according to the present application.

[0033] Figure 7 A schematic view of a stack of a first trace, a second insulating layer, and a second trace in a magnetoresistive device according to the present application.

[0034] Figure 8 FIG. 1 is a schematic diagram of a magnetic response device according to an embodiment of the present application.

[0035] Figure 9 FIG. 2 is a schematic diagram of a plurality of magnetic functional layers in the magnetic response device according to an embodiment of the present application.

[0036] In the drawings: 1, substrate; 2, first insulating layer; 3, inductor coil; 301, first trace; 302, first connecting line; 303, second trace; 4, magnetic response device; 401, first electrode; 402, magnetic functional layer; 403, second electrode; 404, first lead-out portion; 405, second connecting line; 406, second lead-out portion; 5, insulating portion; 6, passivation layer; 7, second insulating layer; 8, first conductive layer; 9, magnetic functional material layer; 10, second conductive layer; 11, third conductive layer; 12, first opening; 13, second opening; X, first direction. DETAILED DESCRIPTION

[0037] The technical solutions in the embodiments (or, “modes of implementation”) of the present application will be described clearly and completely below with reference to the drawings. In the following description, the same numbers in different drawings represent the same or similar elements unless otherwise indicated.

[0038] If the embodiments of the present application involve directional indications or positional relationships (for example, up, down, left, right, front, back, inner, outer, top, bottom, center, vertical, horizontal, longitudinal, transverse, length, width, counterclockwise, clockwise, axial, radial, circumferential, etc.), such terms are only used to explain the relative positional relationships, movement conditions, etc. between components in a certain specific posture (as shown in the drawings); if the specific posture changes, the directional indications or positional relationships also change accordingly. In addition, the embodiments of the present application involve the terms “first”, “second”, etc., which are only used for the convenience of description and cannot be understood as indicating or implying relative importance.

[0039] In the related art, the magnetic response device and the inductor coil are usually vertically distributed in the chip, i.e., the magnetic response device is located in the lower layer and the inductor coil is located in the upper layer, and the two are electrically isolated by an insulating layer. This vertical distribution structure results in a large distance between the magnetic response device and the inductor coil, not only increasing the magnetic field transmission loss and reducing the signal-to-noise ratio, but also causing the device power consumption to increase due to the need for additional isolation layers and wiring space.

[0040] In the field of storage, new magnetoresistive devices usually need an auxiliary magnetic field to achieve stable and controllable electrical writing; at the same time, this special writing mechanism brings high sensitivity to external interference magnetic field, triggering the need for external magnetic shielding. In the field of sensing, magnetoresistive devices need to convert the response to the magnetic field into electrical changes. In a strong magnetic field, the magnetoresistive device will lose its working ability due to magnetic saturation; while the magnetoresistive device with a large magnetic saturation strength will be accompanied by low sensitivity, affecting its sensing ability. In particular, in the working scenario of "electric-magnetic-electric" conversion (such as magnetic isolator, whose magnetic field source is integrated inside the chip rather than external), the inductor coil above the magnetoresistive device not only occupies a large chip area, but also needs a strong current drive to generate a strong induced magnetic field (very large power consumption). We here propose a magnetoresistive device-coil structure that can solve all the above problems at one time.

[0041] The present application provides a magnetoresistive device, which can be a magnetic random access memory, a magnetoresistive sensor, a magnetoresistive isolator, etc. As shown in Figure 6 、 Figure 7 and Figure 8 , the magnetoresistive device can include: a substrate 1; a magnetic response device 4 disposed on one side of the substrate 1 and including a magnetic functional layer 402; an inductor coil 3 located on the same side of the substrate 1 as the magnetic response device 4; the inductor coil 3 includes a first trace 301 and a second trace 303, the second trace 303 is located on the side of the first trace 301 away from the substrate 1; the inductor coil 3 further includes a first connecting line 302 for connecting the first trace 301 and the second trace 303; wherein in the thickness direction of the substrate 1, the lower surface of the magnetic functional layer 402 is higher than the lower surface of the first trace 301, and the upper surface of the magnetic functional layer 402 is lower than the upper surface of the second trace 303.

[0042] The magnetoresistive device of the present application, the lower surface of the magnetic functional layer 402 is higher than the lower surface of the first trace 301, and the upper surface of the magnetic functional layer 402 is lower than the upper surface of the second trace 303, which makes the magnetic functional layer 402 located in the space between the first trace 301 and the second trace 303, i.e. the "sandwich" area of the inductor coil 3, improving the utilization rate of the magnetic field, reducing the driving power consumption, and improving the signal-to-noise ratio; converting the traditional longitudinal insulation isolation (vertical distribution structure in related art) into lateral isolation, eliminating the thickness requirement of the insulation layer; the number of turns of the inductor coil 3 is basically not limited by the horizontal area, which can reduce the coil design area and generate a larger adjustable magnetic field range; the inductor coil 3 can be designed in front of, behind, left and right of the response device, which can generate an electrically generated magnetic field in any horizontal direction to reversely offset the external magnetic field, increasing the working ability of the sensor in a strong magnetic field.

[0043] The parts of the magnetoresistive device of the present application will be described in detail below:

[0044] The substrate 1 is located at the bottom layer of the magnetoresistive device, and provides a supporting foundation for the entire device structure. The material of the substrate 1 can be selected from semiconductor materials (such as monocrystalline silicon, germanium silicon, etc.), insulating materials (such as sapphire, glass, etc.) or other suitable substrate materials for integrated circuit manufacturing. The shape of the substrate 1 is usually a planar sheet structure. In addition, for non-insulating materials, a first insulating layer 2 is also provided on the substrate 1.

[0045] The magnetoresponsive device 4 is provided on one side of the substrate 1 (for example, above the substrate 1), and further, the magnetoresponsive device 4 can be provided on the side of the first insulating layer 2 away from the substrate 1. The magnetoresponsive device 4 is the core component for realizing information storage or transmission, and the main structure is a magnetic functional layer 402. In an embodiment, the magnetic functional layer 402 can be a magnetic tunnel junction, and the material thereof usually includes a magnetic layer and a tunnel barrier layer, for example, from bottom to top, a reference layer (such as CoFeB, iron, nickel, cobalt, and alloys thereof, etc.), a tunnel barrier layer (such as MgO, aluminum oxide, titanium oxide, etc.), and a free layer (such as CoFeB, iron, nickel, cobalt, and alloys thereof, etc.), each layer being prepared by magnetron sputtering or atomic layer deposition, etc. In another embodiment, the magnetic functional layer 402 can be a metal type multilayer film, from bottom to top, a reference layer (such as CoFeB, iron, nickel, cobalt, and alloys thereof, etc.), a metal layer (such as Cu, etc.), and a free layer (such as CoFeB, iron, nickel, cobalt, and alloys thereof, etc.), which has a giant magnetoresistance effect. The shape of the magnetic functional layer 402 is generally columnar or ellipsoidal or cuboid structure. The magnetic tunnel junction has a tunnel magnetoresistance effect, and the magnetic state (the angle between the magnetic moment of the free layer and the reference layer) corresponds to different resistance values, thereby realizing the information conversion between magnetism and electricity. The resistance change of the magnetic tunnel junction can be realized by rewriting the magnetic moment of the free layer through the magnetic field provided by the inductive coil 3, or by the electrical writing of the tunnel junction itself. For electrical writing (spin-orbital torque (SOT) spin-orbital torque, voltage-controlled magnetic anisotropy (VCMA) voltage-controlled magnetic anisotropy, etc.), the inductive coil 3 can provide a small magnetic field for auxiliary electrical writing, or can be used as an anti-magnetic structure to offset external magnetic interference.

[0046] The magnetoresponsive device 4 further includes a first electrode 401 provided on the side of the magnetic functional layer 402 facing the substrate 1, and the orthographic projection of the first electrode 401 on the substrate 1 overlaps with the orthographic projection of the magnetic functional layer 402 on the substrate 1. Further, the orthographic projection of the magnetic functional layer 402 on the substrate 1 is located within the orthographic projection area of the first electrode 401 on the substrate 1, that is, the size of the first electrode 401 is greater than the bottom size of the magnetic functional layer 402, which can ensure effective electrical connection. The material of the first electrode 401 can be selected from metals with good electrical conductivity (such as Al, Ta, Ru, etc.), and the shape is a sheet or columnar structure matching the bottom of the magnetic functional layer 402.

[0047] The magnetic response device 4 further comprises a second electrode 403. The second electrode 403 is arranged on the side of the magnetic functional layer 402 opposite to the substrate 1, and the material thereof can be the same as or different from that of the first electrode 401 (such as Ta, Ru, TiN, etc.). When titanium nitride (TiN) is used as the material of the second electrode 403, the underlying magnetic layer (especially CoFeB which is sensitive to oxygen) can be effectively protected from oxidation in subsequent processes and long-term use, and the interface structure can be stabilized to prevent performance degradation caused by element interdiffusion. The shape of the second electrode 403 is a sheet structure or a columnar structure covering the top of the magnetic functional layer 402. The magnetic response device 4 further comprises a first lead-out portion 404. The first lead-out portion 404 is arranged on the side of the second electrode 403 opposite to the substrate 1, and the material of the first lead-out portion 404 is different from that of the second electrode 403. For example, the material of the first lead-out portion 404 can be a metal with good electrical conductivity (such as Ta, Ru, Cu, etc.). In addition, as shown in FIG. 1, the number of the magnetic response device 4 of the present application can be multiple. The magnetic response devices 4 can be connected in series or in parallel or arranged separately. Taking the case of connecting at least part of the magnetic response devices 4 in parallel as an example, the multiple magnetic response devices 4 connected in parallel can share the first electrode 401, the second electrode 403, or the first lead-out portion 404. Figure 9

[0048] The inductor coil 3 and the magnetic response device 4 are located on the same side of the substrate 1, and can be used to generate a write magnetic field or an auxiliary magnetic field for regulating the magnetic state of the magnetic functional layer 402. The inductor coil 3 comprises a first trace 301, a second trace 303, and a first connecting line 302. The first trace 301 is located on the side of the first insulating layer 2 opposite to the substrate 1, and is arranged in the same layer as the first electrode 401 of the magnetic response device 4, i.e., the first trace 301 and the first electrode 401 are formed by patterning the same conductive layer. The material of the first trace 301 can be a metal (such as Cu, Al, Ag, etc.), and the shape thereof is a long strip-shaped trace structure. The number of the first trace 301 is multiple, and the multiple first traces 301 are distributed along the first direction X (see FIG. 1), and can be arranged in parallel. The extension direction of the first trace 301 intersects the first direction X. The included angle between the extension direction of the first trace 301 and the first direction X can be an acute angle, an obtuse angle, or a right angle. The end of each first trace 301 is used to connect with the first connecting line 302. The function of the first trace 301 is to constitute the bottom conductive path of the inductor coil 3, and to form a spiral coil structure by cooperating with the second trace 303 and the first connecting line 302 to generate a magnetic field with a target intensity. Figure 7

[0049] ​​The second trace 303 is located on the side of the first trace 301 away from the substrate 1, and is located above the first trace 301 and is electrically connected to the first trace 301 by the first connecting line 302. The material of the second trace 303 is the same as or similar to that of the first trace 301 (such as Cu, Al, etc.), and the shape is a long strip-shaped trace structure. The number of second traces 303 is multiple, and the multiple second traces 303 are distributed at intervals along the first direction X, and the multiple second traces 303 can be arranged in parallel. The extension direction of the second trace 303 intersects the extension direction of the first trace 301 and intersects the first direction X. The second trace 303 is arranged in the same layer as the first lead-out portion 404.

[0050] For any second trace 303, one end of the second trace 303 overlaps the end of one of the two adjacent first traces 301 in the orthographic projection on the substrate 1, and the other end of the second trace 303 overlaps the end of the other of the two adjacent first traces 301 in the orthographic projection on the substrate 1. The two ends of the above-mentioned orthographic projection overlap are connected by the first connecting line 302, that is, the two ends of any second trace 303 are connected to the ends of the two adjacent first traces 301 by the first connecting line 302, respectively. The second trace 303 forms an upper conductive path of the inductor coil 3, and together with the first trace 301 forms a three-dimensional coil structure, enhances the magnetic field strength and optimizes the magnetic field direction. Among them, the number of second traces 303 can be one less than the number of first traces 301, but the present application does not limit this.

[0051] The material of the above-mentioned first connecting line 302 is a conductive metal (such as W, Cu, etc.), and the shape is a columnar or plug-shaped structure. The function of the first connecting line 302 is to realize the electrical connection of the first trace 301 and the second trace 303, so that the current can flow between the first trace 301 and the second trace 303, thereby forming a complete coil current path.

[0052] The magnetoresistive device of the present application can further include a second insulating layer 7 covering the above-mentioned first electrode 401 and the plurality of first traces 301. The above-mentioned first lead portion and the plurality of second traces 303 are located on the surface of the second insulating layer 7 away from the substrate 1. The first connecting line 302 penetrates the second insulating layer 7.

[0053] The above magnetic response device 4 further comprises a second lead-out portion 406 and a second connecting line 405. The second lead-out portion 406 is located on the same side of the magnetic functional layer 402 as the first lead-out portion 404, and specifically, the second lead-out portion 406 is arranged in the same layer as the first lead-out portion 404. The material of the second lead-out portion 406 is the same as that of the first lead-out portion 404. The orthogonal projection of the second lead-out portion 406 on the substrate 1 overlaps the orthogonal projection of the first electrode 401 on the substrate 1. In the thickness direction of the substrate 1, the second connecting line 405 is located between the first electrode 401 and the second lead-out portion 406 and penetrates the second insulating layer 7, has the same material (such as W or Cu) as the first connecting line 302, has a columnar structure, has the same height as the first connecting line 302, and has the function of electrically connecting the first electrode 401 and the second lead-out portion 406 to form a complete lower electrode lead-out path. The application further comprises an insulating portion 5. The insulating portion 5 can be arranged between the adjacent second trace 303 and the first lead-out portion 404. Of course, the insulating portion 5 can also be arranged between the adjacent first lead-out portion 404 and the second lead-out portion 406. The material of the insulating portion 5 can be the same as that of the second insulating layer 7.

[0054] Further, in the first direction X, the magnetic functional layer 402 is located on one side of the inductor coil 3. Taking the number of inductor coils 3 as an example, the orthogonal projection of the plurality of inductor coils 3 on the substrate 1 surrounds the orthogonal projection of the magnetic functional layer 402. Further, taking the number of inductor coils 3 as an example, the two inductor coils 3 are respectively located on the two sides of the magnetic functional layer 402 in the first direction X to generate a uniform regulation magnetic field. The first trace 301 and the second trace 303 of each inductor coil 3 are designed according to the above structure. The magnetoresistive device of the application can further comprise a passivation layer 6 covering the first lead-out portion 404, the second lead-out portion 406, and the plurality of second traces 303. The passivation layer 6 can be an insulating layer.

[0055] The application also provides a preparation method of a magnetoresistive device for preparing the above-mentioned magnetoresistive device. The preparation method can comprise steps S10-S110, wherein:

[0056] Step S10: as shown in Figure 1 , a substrate 1 is provided;

[0057] The substrate 1 can be subjected to cleaning treatment to remove impurities and natural oxide layers on the surface.

[0058] Step S20: as shown in Figure 1 , a first insulating layer 2 is formed on one side of the substrate 1;

[0059] The first insulating layer 2 can be formed by chemical vapor deposition (CVD) or thermal oxidation growth.

[0060] Step S30: as shown in Figure 1As shown, along the direction away from the substrate 1, the first conductive layer 8, the magnetic functional material layer 9 and the second conductive layer 10 are sequentially formed on the first insulating layer 2;

[0061] The first conductive layer 8 can be formed by sputtering method. The magnetic functional material layer 9 can be formed by sputtering method to sequentially form a reference layer, a barrier layer and a free layer. The second conductive layer 10 can be formed by sputtering method. Then, the magnetic thin film is annealed to realize the reference layer.

[0062] Step S40: as shown, Figure 2 The second conductive layer 10 and the magnetic functional material layer 9 are patterned to form the second electrode 403 and the magnetic functional layer 402;

[0063] The patterning can adopt photolithography and etching process.

[0064] Step S50: as shown, Figure 3 The first conductive layer 8 is patterned to form the first electrode 401 and the plurality of first traces 301 of the inductor coil 3;

[0065] First, the pattern of the first electrode 401 and the first traces 301 is defined by photolithography, and then the first conductive layer 8 is etched to form the first electrode 401 and the first traces 301.

[0066] Step S60: as shown, Figure 3 The second insulating layer 7 covering the first electrode 401 and the plurality of first traces 301 is formed;

[0067] The second insulating layer 7 is formed by CVD method, and the upper surface of the formed second insulating layer 7 is flush with the upper surface of the second electrode 403, i.e. the second insulating layer 7 surrounds the second electrode 403 and the magnetic functional layer 402.

[0068] Step S70: as shown, Figure 4 The plurality of first openings 12 and second openings 13 are formed on the second insulating layer 7; the second openings 13 expose the first electrode 401, and each first opening 12 exposes one end of one first trace 301;

[0069] The first openings 12 and the second openings 13 are formed by photolithography and etching process.

[0070] Step S80: as shown, Figure 4 The first connecting lines 302 are formed in the first openings 12, and the second connecting lines 405 are formed in the second openings 13;

[0071] The first connecting lines 302 and the second connecting lines 405 are formed by chemical plating or physical vapor deposition method, fill the first openings 12 and the second openings 13, and form columnar connections.

[0072] Step S90: asFigure 5 As shown, a third conductive layer 11 is formed covering the second insulating layer 7;

[0073] The third conductive layer 11 is formed by sputtering.

[0074] Step S100: As Figure 6 As shown, the third conductive layer 11 is patterned to form a first lead-out 404, a second lead-out 406, and a plurality of second traces 303 of the inductor coil 3;

[0075] The patterning process employs photolithography and etching.

[0076] Step S110: As Figure 6 As shown, a passivation layer 6 is formed covering the first lead-out portion 404, the second lead-out portion 406, and a plurality of second traces 303.

[0077] The passivation layer 6 is formed by CVD and is made of silicon nitride or silicon dioxide to protect the internal structure from the influence of the external environment.

[0078] This application also discloses an electronic device including any of the magnetoresistive devices described above. This electronic device can be a mobile phone, computer, tablet, etc.

[0079] It should be noted that the technical solutions or features described in the above embodiments can be combined or complemented by each other without conflict. The scope of protection of this application is not limited to the precise structures described in the above embodiments and shown in the accompanying drawings; all modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A magnetoresistive device, characterized by, The application relates to a magnetic response device, comprising: a substrate; a magnetic response device arranged on one side of the substrate and comprising a magnetic functional layer; an inductor coil arranged on the same side of the substrate as the magnetic response device; the inductor coil comprises a first trace and a second trace, the second trace is arranged on the side of the first trace away from the substrate; the inductor coil further comprises a first connecting line for connecting the first trace and the second trace; wherein, in the thickness direction of the substrate, the lower surface of the magnetic functional layer is higher than the lower surface of the first trace, and the upper surface of the magnetic functional layer is lower than the upper surface of the second trace. The magnetic response device further comprises: a first electrode arranged on the side of the magnetic functional layer facing the substrate; and the first trace is arranged in the same layer as the first electrode. The magnetic response device further comprises: a second electrode arranged on the side of the magnetic functional layer away from the substrate; a first lead-out portion arranged on the side of the second electrode away from the substrate; the second trace is arranged in the same layer as the first lead-out portion, and the material of the first lead-out portion is different from that of the second electrode. The magnetic response device further comprises: a second lead-out portion arranged on the same side of the magnetic functional layer as the first lead-out portion; the second lead-out portion and the first electrode are partially overlapped in the orthographic projection on the substrate; and a second connecting line arranged between and connecting the first electrode and the second lead-out portion. The second lead-out portion is arranged in the same layer as the first lead-out portion, and the height of the first connecting line is the same as that of the second connecting line.

2. The magnetoresistive device of claim 1, wherein The number of the inductor coils is plural, and the orthographic projection of the plural inductor coils on the substrate surrounds the orthographic projection of the magnetic functional layer on the substrate. The number of the first traces is plural, and the first traces are distributed along a first direction; the extension direction of the first traces intersects the first direction; 3. The magnetoresistive device of claim 2, wherein, The number of the second traces is plural, and the second traces are distributed along the first direction; the extension direction of the second traces intersects the first direction and the extension direction of the first traces; For any second trace, the orthographic projection of one end of the second trace on the substrate and the orthographic projection of one end of one of the two adjacent first traces on the substrate are overlapped, and the orthographic projection of the other end of the second trace on the substrate and the orthographic projection of the other end of the other of the two adjacent first traces on the substrate are overlapped; In the first direction, the magnetic functional layer is arranged on one side of the inductor coil.

4. The magnetoresistive device of claim 3, wherein The number of the inductor coils is two, and in the first direction, the two inductor coils are arranged on the two sides of the magnetic functional layer. The application relates to a magnetic response device, comprising: providing a substrate; forming a first insulating layer on one side of the substrate; sequentially forming a first conductive layer, a magnetic functional material layer and a second conductive layer on the first insulating layer in the direction away from the substrate; and patterning the second conductive layer and the magnetic functional material layer to form a second electrode and a magnetic functional layer; the orthographic projection of the magnetic functional layer on the substrate and the orthographic projection of the second electrode on the substrate are partially overlapped. ​ 5. The magnetoresistive device of claim 4, wherein, ​ 6. The magnetoresistive device of claim 1, wherein, ​ 7. A magnetoresistive device according to claim 1 or 6, characterised in that ​ ​ ​ ​ 8. The magnetoresistive device of claim 7, wherein, ​ 9. A method of making a magnetoresistive device, comprising: ​ ​ ​ ​ ​ patterning the first conductive layer to form a first electrode and a plurality of first traces; a normal projection of the magnetic functional layer on the substrate overlaps with a normal projection of the first electrode on the substrate; forming a second insulating layer covering the first electrode and the plurality of first traces, an upper surface of the second insulating layer is flush with an upper surface of the second electrode; forming a plurality of first openings and second openings on the second insulating layer, the second openings expose the first electrode, each of the first openings exposes an end portion of one of the first traces; forming first connecting lines in the first openings and second connecting lines in the second openings; forming a third conductive layer covering the second insulating layer; patterning the third conductive layer to form a first lead-out portion, a second lead-out portion and a plurality of second traces, the first lead-out portion is disposed on a side of the second electrode away from the substrate, the second lead-out portion covers the second connecting lines, two ends of the second traces are connected to two of the first connecting lines respectively.

10. An electronic device, comprising: A magnetic resistance device comprising any one of claims 1-8.

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