Wafer degumming device, wafer stripping equipment and wafer stripping method

Abstract

The invention relates to the technical field of semiconductors, and provides a wafer degumming device, wafer stripping equipment and a wafer stripping method. The wafer degumming device comprises a degumming body, a high-pressure air inlet, a refrigerant inlet, a mixing cavity and an outlet are formed in the degumming body; the high-pressure gas inlet is used for introducing high-pressure gas; the refrigerant inlet is used for introducing a refrigerant; the high-pressure gas inlet and the refrigerant inlet are communicated with the mixing cavity, so that the high-pressure gas and the refrigerant are mixed to form a mixture; and the outlet is used for spraying out the mixture to cool the bonding position of the wafer. The wafer degumming device ensures the stability of the wafer in the degumming process on one hand, and can improve the phenomenon that dirt residues on the surface of the wafer are difficult to remove on the other hand.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, in particular to a wafer degumming device, wafer stripping equipment and wafer stripping method. BACKGROUND

[0002] The manufacturing of wafers (for example, silicon wafers) starts from a crystal bar, which needs to be cut into hundreds or even thousands of thin wafer slices. The cutting process is as follows:

[0003] Primary bonding: the prepared crystal bar is firmly fixed on a cutting medium resin plate (also known as a process plate or support plate) by a special bonding glue (usually hot melt glue or epoxy resin). The function of this resin plate is to act as a buffer and transition between the crystal bar and the final fixing point.

[0004] Secondary fixing: the "crystal bar-resin plate" assembly is fixed to the workpiece plate (also known as the workbench or clamp) of the wire cutting machine through the same bonding process. The workpiece plate is part of the machine and has a standardized interface.

[0005] Final clamping: the above assembly is transported to the wire cutting machine, and the workpiece plate is accurately clamped and fixed by mechanical or hydraulic means. At this time, the crystal bar, resin plate, workpiece plate and a large amount of bonding glue together form a complex multi-layer composite structure system.

[0006] After cutting, the crystal bar is cut into multiple wafer slices, and the wafer slices are still bonded to the cutting medium resin plate. At this time, degumming treatment is needed to separate the wafer slices from the cutting medium resin plate.

[0007] The existing degumming method usually uses hot water soaking method or hot air blowing method to heat the bonding glue at the connection between the wafer slices and the cutting medium resin plate to separate them.

[0008] In the hot water soaking method, the viscosity of the bonding glue decreases due to high temperature, and the wafer slices are prone to irregular angle tilting due to gravity and mechanism movement. The uncertain position of the tilted wafer slices can cause the failure of the mechanical arm to pick up the wafer slices. In addition, the wafer slices are prone to be squeezed during the movement of the mechanism, causing broken pieces and edge collapse and other adverse phenomena. In the hot air blowing method, the wafer surface will be attached with sand and other dirt. The hot air will further dry and solidify the sand and other dirt remaining on the wafer surface while dissolving the resin, making it difficult to remove the dirt in the subsequent cleaning process. If the sand and other dirt remaining on the wafer surface cannot be effectively removed, it will cause product defects such as wafer surface pits in the subsequent polishing process.

[0009] Therefore, there is a need for a wafer degumming device, wafer stripping equipment and wafer stripping method, which can ensure the stability of the wafer and improve the phenomenon that the dirt remaining on the wafer surface is difficult to remove. SUMMARY

[0010] The application provides a wafer degumming device, wafer stripping equipment and a wafer stripping method, which can ensure the stability of the wafer in the degumming process and improve the phenomenon that the dirt on the wafer surface is difficult to remove.

[0011] The application provides a wafer degumming device, which comprises a degumming body.

[0012] The degumming body is provided with a high-pressure gas inlet, a refrigerant inlet, a mixing cavity and an outlet.

[0013] The high-pressure gas inlet is used for introducing high-pressure gas.

[0014] The refrigerant inlet is used for introducing refrigerant.

[0015] The high-pressure gas inlet and the refrigerant inlet are communicated with the mixing cavity and are used for mixing the high-pressure gas and the refrigerant to form a mixture.

[0016] The outlet is used for spraying the mixture to cool the bonding position of the wafer.

[0017] Optionally, the outlet is in the form of an arc-shaped slit.

[0018] Optionally, the high-pressure gas inlet and the outlet are oppositely arranged along a first direction, and the high-pressure gas inlet and the outlet are arranged on the two sides of the mixing cavity along the first direction.

[0019] And / or, the refrigerant inlet and the high-pressure gas inlet are arranged at an angle.

[0020] Optionally, the degumming body is further provided with an acceleration channel, the acceleration channel is connected between the mixing cavity and the outlet, and the radial inner size of the acceleration channel is smaller than the radial inner size of the mixing cavity.

[0021] And / or, the radial inner size of the high-pressure gas inlet is greater than the radial inner size of the acceleration channel.

[0022] Optionally, the refrigerant is dry ice or liquid nitrogen.

[0023] The application further provides wafer stripping equipment comprising the wafer degumming device.

[0024] Optionally, the wafer stripping equipment further comprises a wafer taking device and a workbench.

[0025] The wafer degumming device is arranged on the workbench, and the wafer taking device is arranged to move relative to the workbench.

[0026] The wafer taking device comprises a wafer taking body and a clamping assembly, the wafer taking body is provided with a fitting surface, the fitting surface is used to fit the surface of the wafer to be taken and expose the bonding position of the wafer to be taken;

[0027] The clamping assembly is arranged to move relative to the fitting surface, and the clamping assembly is used to clamp the wafer to be taken in the circumferential direction when the fitting surface fits the surface of the wafer to be taken.

[0028] Optionally, the wafer stripping device further comprises a heating member arranged on the wafer taking body and used to heat the fitting surface;

[0029] And / or, the wafer stripping device further comprises a protective cover arranged on the workbench and used to cover the wafer and only expose the wafer to be taken.

[0030] Optionally, the clamping assembly comprises at least three clamping members, each of the clamping members is arranged around the fitting surface, and at least one of the clamping members is arranged to move in the direction parallel to the fitting surface.

[0031] The present application further provides a wafer stripping method, comprising the following steps:

[0032] S1: driving the wafer taking device to move so that the fitting surface fits the surface of the wafer to be taken and exposes the bonding position of the wafer to be taken;

[0033] S2: clamping the wafer to be taken in the circumferential direction by the clamping assembly;

[0034] S3: spraying the mixed body to the bonding position of the wafer to be taken by the wafer degumming device to cool down, so that the bonding position is degummed;

[0035] S4: driving the wafer taking device to move to transfer the wafer to be taken to a designated position.

[0036] Optionally, the step S4 further comprises the following steps:

[0037] Heating the fitting surface, and the clamping assembly releases the wafer to be taken.

[0038] In summary, the wafer degumming device comprises a degumming body, the degumming body is provided with a high-pressure gas inlet, a refrigerant inlet, a mixing cavity and an outlet, the high-pressure gas inlet is used to introduce high-pressure gas, the refrigerant inlet is used to introduce refrigerant, the high-pressure gas inlet and the refrigerant inlet are communicated with the mixing cavity for mixing the high-pressure gas and the refrigerant to form a mixed body, and the outlet is used to spray the mixed body to cool the bonding position of the wafer.

[0039] The wafer debonding device in the present application realizes debonding by rapidly cooling the wafer bonding position. The mixed body is sprayed to the wafer bonding position, on one hand, the bonding glue at the bonding position is rapidly cooled and becomes brittle, so as to reduce its adhesion and facilitate the separation of the wafer and the bonding glue; on the other hand, based on the difference in thermal expansion and contraction caused by the different materials of the wafer and the bonding glue, the wafer and the bonding glue are out of sync in material contraction, so as to generate stress and relative displacement between the wafer and the bonding glue, facilitating the separation of the wafer and the bonding glue; moreover, the impact effect is formed on the wafer bonding position by the sprayed mixed body, and impact force is applied to the wafer and the bonding glue, so as to facilitate the separation of the wafer and the bonding glue.

[0040] Moreover, during the debonding process, the mixed body of high-pressure gas and coolant is sprayed under high pressure, and is affected by airflow and diffuses to the wafer surface. When the mixed body contacts the mortar or dirt on the wafer surface, the impact force can strip the mortar and dirt on the wafer surface, and the mixed body can rapidly absorb the heat of the mortar and dirt and sublimate into gas, so as to generate strong micro-explosion effect in the sublimation process, and the mortar and dirt are removed from the wafer surface, avoiding the phenomenon of wafer surface pits and other product defects in the subsequent polishing process.

[0041] The wafer debonding device, which realizes debonding by cooling, can ensure that the wafer will not be irregularly tilted due to the viscosity reduction of the bonding glue. Moreover, the wafer to be debonded can be fixed during the debonding process without being soaked in liquid, which can prevent the wafer from being irregularly tilted and help to ensure the stability of the wafer. BRIEF DESCRIPTION OF DRAWINGS

[0042] Figure 1 FIG. 1 is a sectional view of a wafer debonding device according to an embodiment of the present application;

[0043] Figure 2 FIG. 2 is a top view of a wafer stripping device according to an embodiment of the present application;

[0044] Figure 3 FIG. 3 is a structure diagram of a wafer taking device according to an embodiment of the present application.

[0045] In the drawings:

[0046] 10 - wafer debonding device; 101 - mixed part; 102 - spraying part;

[0047] 11 - debonding body; 111 - high-pressure gas inlet; 112 - coolant inlet; 113 - mixing cavity; 111 - high-pressure gas inlet; 114 - outlet; 115 - acceleration channel;

[0048] 20 - wafer taking device;

[0049] 21 - wafer body; 211 - wafer adhered surface;

[0050] 22 - clamping assembly; 221 - clamping member; 222 - connecting arm; 223 - driving member;

[0051] 23 - clamping arm;

[0052] 30 - workbench; 31 - workpiece plate carrier; 32 - linear motor; 33 - linear guide rail;

[0053] 40 - support;

[0054] 50 - heating member;

[0055] 60 - protective cover;

[0056] 70 - mechanical arm;

[0057] 80 - housing; 81 - air inlet; 82 - air outlet;

[0058] a - first direction. DETAILED DESCRIPTION

[0059] The wafer degumming device, wafer peeling apparatus and wafer peeling method of the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present application will be more apparent according to the following description. It should be noted that the accompanying drawings are in a very simplified form and all use non-precise proportions, only for the purpose of facilitating, clarifying and assisting the description of the embodiments of the present application.

[0060] In the present application, "outer diameter" and "inner diameter" correspond to the diameter size for circular structures, and for non-circular structures, the inner diameter refers to the diameter of its inscribed circle, and the outer diameter refers to the diameter of its circumscribed circle; "axial direction" corresponds to the direction of the axis for cylindrical rods, and for non-cylindrical rods, the axial direction corresponds to the length direction of the rod.

[0061] As used in the present disclosure, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. The term "or" is generally employed in its sense including "and / or" unless the content clearly dictates otherwise. The term "at least two" is generally employed in its sense including "two or more" unless the content clearly dictates otherwise. The terms "first," "second," "third," etc. are used only to describe a particular aspect and do not imply relative importance or a limitation on the number of features that can implement the concepts described. Thus, features identified as "first," "second," "third," etc. can include one or at least two of such features. In addition, as used in the present disclosure, "mounting," "connected," "connection," an element "disposed" on another element, should be broadly interpreted, and generally only means that there is a connection, coupling, cooperation or transmission relationship between two elements, and the two elements can be directly or indirectly connected, coupled, cooperated or transmitted through intermediate elements, and cannot be understood as indicating or implying the spatial positional relationship between the two elements, i.e. one element can be in any position relative to the other element, such as inside, outside, above, below or one side, etc., unless the context clearly indicates otherwise. For those skilled in the art, the specific meaning of the above terms in the present disclosure can be understood according to the specific circumstances. In addition, directional terms such as above, below, up, down, upward, downward, left, right, etc. are used with respect to the exemplary embodiments as they are shown in the drawings, upward or upward direction is toward the top of the corresponding drawing, and downward or downward direction is toward the bottom of the corresponding drawing.

[0062] The existing degumming method is usually to use hot water immersion method or hot air blowing method to soak the wafer after cutting the mortar line, and to peel off the adhesive glue at the connection between the wafer and the cutting medium resin plate.

[0063] In the hot water immersion method, the viscosity of the adhesive glue is reduced due to the high temperature, and the wafer is prone to irregular angle dumping due to the influence of gravity and the movement of the mechanism. The dumped wafer has an uncertain pose, which can easily cause the wafer to fail to be picked up by the mechanical arm. In addition, the wafer is prone to be squeezed during the movement of the mechanism, causing broken pieces and edge collapse and other defects. In the hot air blowing method, because the wafer surface will be attached with mortar and other dirt, the hot air will further dry and solidify the mortar and other dirt remaining on the wafer surface while dissolving the resin, which is difficult to remove in the subsequent cleaning process. In the case that the mortar and other dirt remaining on the wafer surface cannot be effectively removed, it will cause product defects such as pits on the wafer surface in the subsequent polishing process.

[0064] In addition, the above-mentioned degumming method usually cooperates with the way of vacuum chuck adsorbing the wafer to pick up the wafer after degumming. However, in the process of cutting the crystal bar, the surface roughness of the wafer will be greatly reduced. Due to the influence of the surface roughness of the wafer, the friction coefficient is reduced during the wafer picking process of the vacuum chuck, and it is difficult to effectively fix the wafer to complete the wafer peeling and picking action.

[0065] A wafer debonding device 10 is provided in the embodiment, which comprises a debonding body 11.

[0066] In combination Figure 1 As shown in the figure, the debonding body 11 comprises a mixing part 101 and a spraying part 102; wherein the mixing part 101 is in a cylindrical structure as a whole, and the spraying part 102 is in a circular truncated cone structure as a whole. The axial end of the mixing part 101 is connected with the axial small-diameter end of the spraying part 102, and the mixing part 101 and the spraying part 102 are coaxially arranged.

[0067] The mixing part 101 is used for the high-pressure gas and the coolant to enter and mix to form a mixture, and the spraying part 102 is used for the mixture to be sprayed to the wafer bonding position, so that the bonding glue is rapidly cooled and rapidly embrittled and the adhesion is reduced, and the wafer debonding process is completed with the impact force generated during spraying.

[0068] Please continue to refer to Figure 1 As shown in the figure, the debonding body 11 is provided with a high-pressure gas inlet 111, a coolant inlet 112, a mixing cavity 113 and an outlet 114.

[0069] The high-pressure gas inlet 111 is used for the high-pressure gas to enter. The high-pressure gas is required to be a clean gas, and the type of the high-pressure gas can be selected based on actual use requirements, for example, inert gas is selected.

[0070] The coolant inlet 112 is used for the coolant to enter. The type of the coolant can be selected based on the actual debonding cooling requirements, for example, dry ice or liquid nitrogen is selected to meet the debonding cooling requirements at low temperature. In addition, the selection of dry ice or liquid nitrogen also facilitates evaporation at room temperature, which on the one hand ensures better cooling debonding effect, and on the other hand also allows the coolant to evaporate naturally, preventing contamination of the wafer surface.

[0071] The high-pressure gas inlet 111 and the coolant inlet 112 communicate with the mixing cavity 113 for mixing the high-pressure gas and the coolant to form a mixture. The mixing cavity 113 provides a place for the mixing of the high-pressure gas and the coolant to ensure more uniform mixing of the two.

[0072] The outlet 114 is used for the mixture to be sprayed to cool the bonding position of the wafer. By spraying the mixture to the wafer bonding position, on the one hand, the bonding glue at the bonding position is rapidly cooled and embrittled to reduce its adhesion ability, facilitating the separation of the wafer and the bonding glue; on the other hand, based on the difference in thermal expansion and contraction caused by the different materials of the bonding glue and the wafer, the different steps of the material contraction of the two causes stress and relative displacement between the wafer and the bonding glue, facilitating the separation of the wafer and the bonding glue; moreover, the mixture sprayed forms an impact effect on the bonding position of the wafer and the bonding glue, and an impact force is applied to the wafer and the bonding glue to facilitate the separation of the two.

[0073] In this embodiment, the high-pressure air inlet 111 can be externally connected to an air compression device, and an oil-gas separation device and a filtering device are arranged between the air compression device and the high-pressure air inlet 111 to ensure the cleanliness of the high-pressure gas. The pressure of the high-pressure gas introduced into the high-pressure air inlet 111 is preferably set to 0.3 Mpa-0.5 Mpa. The introduction pressure of the coolant (dry ice particles or liquid nitrogen) is preferably 0.05 Mpa-0.2 Mpa. By setting the appropriate pressure, on the one hand, the optimal degumming effect is ensured, and on the other hand, the wafer is prevented from being tilted due to the impact. Moreover, by setting the appropriate pressure, the high-pressure gas and the coolant can be easily mixed in the mixing chamber 113, achieving a better mixing effect. Generally, the temperature requirement of the epoxy adhesive used for bonding the crystal bar (or wafer) is-50℃-150℃, the mixing ratio of the high-pressure gas and the coolant is set to 6:1, and the pressure is limited to effectively control the temperature of the dry ice particles or liquid nitrogen contacting the object to be between-60℃ and-70℃, wherein the diameter of the dry ice particles is required to be less than 1 mm (to prevent the impact force from causing damage to the wafer surface). The use of dry ice or liquid nitrogen instead of traditional hot water or hot air wafer degumming and peeling method effectively prevents the problem that the mortar or dirt is difficult to remove due to the drying of the wafer surface.

[0074] The dry ice particles or liquid nitrogen mixed with the high-pressure gas are sprayed through the outlet 114 to the bonding position of the adhesive used between the resin plate and the wafer. The low temperature makes the adhesive at the bonding position brittle and reduces the adhesion, and the impact force generated during spraying completes the wafer degumming process. During the degumming process, the dry ice particles or liquid nitrogen two fluids will diffuse to the wafer surface under the influence of the airflow during the high-pressure spraying of the wafer degumming device 10, when the mixture contacts the mortar or dirt on the wafer surface, the impact force will cause the mortar and dirt on the wafer surface to be peeled off, and the mixture contacting the wafer surface will quickly absorb the heat of the mortar and dirt and sublimate into gas. The strong micro-explosion effect generated in the sublimation process can effectively remove the mortar and dirt from the wafer surface.

[0075] In summary, the wafer degumming device of the present embodiment realizes degumming by rapidly cooling the wafer bonding position. By spraying the mixture to the wafer bonding position, on the one hand, the adhesive at the bonding position is rapidly cooled and brittle, reducing its adhesion to facilitate the separation of the wafer and the adhesive; on the other hand, based on the difference in thermal expansion and contraction caused by the different materials of the adhesive and the wafer, the stress and relative displacement between the substrate and the adhesive are generated by the different steps of the two materials, facilitating the separation of the wafer and the adhesive; moreover, the impact effect is formed on the wafer and the adhesive bonding position by the sprayed mixture, and the impact force is applied to the wafer and the adhesive to facilitate their separation.

[0076] And the mixture of high pressure gas and coolant in the process of degumming is injected under high pressure. The mixture is affected by the airflow and diffuses to the wafer surface. When the mixture contacts the slurry or dirt on the wafer surface, the impact force can strip the slurry and dirt on the wafer surface. The mixture contacts the wafer surface and absorbs the heat of the slurry and dirt and sublimates into gas. The sublimation process produces a strong micro-explosion effect, which can remove the slurry and dirt from the wafer surface, avoiding the phenomenon of wafer surface pits and other product defects in the subsequent polishing process.

[0077] The wafer degumming device uses cooling to degum. In the degumming process, the viscosity of the adhesive does not decrease, which can prevent the wafer from tilting at irregular angles due to the decrease in viscosity. Moreover, the wafer does not need to be soaked in liquid during the degumming process, which facilitates the fixation of the wafer during the degumming process and prevents the wafer from tilting at irregular angles, thereby ensuring the stability of the wafer.

[0078] Further, the outlet 114 is in the shape of an arc-shaped slit. Preferably, the curvature of the shape of the outlet 114 is adapted to the outer diameter of the wafer, and the width and circumferential length of the outlet 114 are adapted to the thickness and circumferential length of the wafer bonding area. During the cooling of the wafer bonding area, the wafer degumming device ensures that the outlet 114 corresponds to the wafer bonding position and the injection range corresponds to the wafer bonding area, so as to accurately cool the wafer bonding area.

[0079] The high-pressure gas inlet 111 and the outlet 114 are arranged opposite along a first direction a. The first direction a is parallel to the axial direction of the mixing part 101 and the injection part 102.

[0080] Please continue to refer to Figure 1 The high-pressure gas inlet 111 is arranged at one end of the mixing part 101 away from the injection part 102 along the axial direction (the right end of the mixing part 101), and the outlet 114 is arranged at one end of the injection part 102 away from the mixing part 101 along the axial direction (the left end of the injection part 102). Figure 1 Figure 1

[0081] The mixing cavity 113 is arranged in the mixing part 101, and the high-pressure gas inlet 111 and the outlet 114 are arranged on both sides of the mixing cavity 113 along the first direction a.

[0082] ​​In addition, the coolant inlet 112 is arranged perpendicularly to the high-pressure gas inlet 111, and the coolant inlet 112 is arranged on the outer circumferential surface of the mixing portion 101 and extends radially. The angle between the coolant inlet 112 and the high-pressure gas inlet 111 is arranged to facilitate the mixing of the high-pressure gas and the coolant in the mixing cavity 113. In other alternative embodiments, the opening angle between the coolant inlet 112 and the high-pressure gas inlet 111 can be set to other angles, for example, 45°, 60°, etc.

[0083] Please continue to refer to Figure 1 As shown, the degumming body 11 is further provided with an acceleration channel 115, which is connected between the mixing cavity 113 and the outlet 114. The radial inner dimension of the acceleration channel 115 is smaller than the radial inner dimension of the mixing cavity 113. The radial inner dimension of the high-pressure gas inlet 111 is greater than the radial inner dimension of the acceleration channel 115.

[0084] In this embodiment, the acceleration channel 115 is arranged as a circular channel, the mixing cavity 113 is arranged as a cylindrical cavity, the high-pressure gas inlet 111 is arranged as a circular inlet, and the coolant inlet 112 is arranged as a circular inlet. At this time, the radial inner dimension of the acceleration channel 115 is the inner diameter of the acceleration channel 115, the radial inner dimension of the mixing cavity 113 is the inner diameter of the mixing cavity 113, and the radial inner dimension of the high-pressure gas inlet 111 is the inner diameter of the high-pressure gas inlet 111. In other alternative embodiments, if the acceleration channel 115, the mixing cavity 113, and the high-pressure gas inlet 111 are non-circular structures, the radial inner dimension at this time is the diameter of the inscribed circle.

[0085] As shown in the drawings, Figure 1 In this embodiment, the connection between the mixing cavity 113 and the high-pressure gas inlet 111 is a variable-diameter section, and the connection between the mixing cavity 113 and the acceleration channel 115 is also a variable-diameter structure, to ensure smooth transition connection between the mixing cavity 113, the high-pressure gas inlet 111, and the acceleration channel 115.

[0086] In addition, the radial dimension of the acceleration channel 115 is set to be small, to facilitate the acceleration of the gas in the mixing cavity 113, and then the gas is sprayed out through the outlet 114, to achieve a better degumming effect.

[0087] This embodiment also provides a wafer peeling device, which comprises the wafer degumming device described above.

[0088] In addition, the wafer peeling device further comprises a wafer taking device 20 and a workbench 30.

[0089] The wafer degumming device 10 is arranged on the workbench 30, and the wafer taking device 20 is arranged to move relative to the workbench 30.

[0090] The workbench 30 is used to place the wafer. In the process of cutting the wafer, primary bonding and secondary fixing are required: the primary bonding is to firmly fix the prepared wafer on a medium (for example, a cutting medium resin plate, also known as a process plate or a support plate) through a special bonding glue (usually hot melt glue or epoxy resin). The function of the resin plate is to act as a buffer and transition between the wafer and the final fixing point. The secondary fixing is to fix the "wafer-resin plate" assembly as a whole to the workpiece plate (also known as the clamp) matched with the wire cutting machine, which is a part of the machine and has a standardized interface. When the wafer is cut into multiple pieces, the wafer is still fixed to the workpiece plate through the resin plate, and at this time, the wafer and the resin plate need to be separated by degumming. The workbench 10 is used to place the workpiece plate and make the wafer vertically downward. The workbench 10 can be provided with a hollow area, and the workpiece plate is supported on the edge of the hollow area and makes the wafer vertically hang through the hollow area. The structure of the workbench 10 and the structure of the workpiece plate are consistent with the existing equipment, and will not be described here.

[0091] As shown in Figure 2 , the wafer degumming device 10 is arranged on the workbench 30 through the support 40, and the support 40 is arranged to adjust the orientation of the outlet 114 of the wafer degumming device 10, so that the outlet 114 is directed to the bonding position of the outermost wafer.

[0092] As shown in Figure 2 , the outlet 114 of the wafer degumming device 10 is at an angle of 45°-75° to the wafer. This angle range has the least influence on the splash range of the mixture after spraying, can improve the stability and efficiency of wafer degumming, and reduce the influence of the mixture on other components.

[0093] In other alternative embodiments, the outlet 114 of the wafer degumming device 10 is arranged at an angle of 90° to the wafer, that is, the outlet 114 is vertically opposite the bonding position of the wafer. The included angle between the outlet 114 of the wafer degumming device 10 and the wafer can be set based on the actual degumming requirements.

[0094] As shown in Figure 2 and Figure 3 , the wafer taking device 20 includes a wafer taking body 21 and a clamping assembly 22.

[0095] In this embodiment, the wafer taking body 21 is in a sheet structure, and one side of the wafer taking body 21 serves as a fitting surface 211 for fitting on the surface of the wafer to be taken and exposing the bonding position of the wafer to be taken. The wafer to be taken refers to the wafer to be degummed, which needs to be transported to a designated position after degumming. Figure 2The wafer to be taken is the wafer located at the rightmost side. When the wafer to be taken is transferred to the designated position, the wafer adjacent to the wafer to be taken is the next wafer to be taken, and the wafer to be taken is the wafer to be taken.

[0096] The wafer to be taken is the wafer located at the rightmost side. When the wafer to be taken is transferred to the designated position, the wafer adjacent to the wafer to be taken is the next wafer to be taken, and the wafer to be taken is the wafer to be taken.

[0097] Please continue to refer to Figure 3 As shown in the figure, the clamping assembly 22 is arranged to move relative to the abutting surface 211. The clamping assembly 22 is used to circumferentially clamp the wafer to be taken when the abutting surface 211 is abutted to the surface of the wafer to be taken.

[0098] Specifically, the clamping assembly 22 includes four clamping pieces 221, and each clamping piece 221 is arranged around the abutting surface 211. Two clamping pieces 221 are arranged at two corners of the abutting surface 211 along the length direction of the abutting surface 211 on the left side of the abutting surface 211. Figure 3 The other two clamping pieces 221 are arranged at two corners of the abutting surface 211 along the length direction of the abutting surface 211 on the right side of the abutting surface 211. Figure 3 The other two clamping pieces 221 are arranged at two corners of the abutting surface 211 along the length direction of the abutting surface 211 on the right side of the abutting surface 211. Figure 3 The other two clamping pieces 221 are arranged at two corners of the abutting surface 211 along the length direction of the abutting surface 211 on the right side of the abutting surface 211.

[0099] In this embodiment, the driving member 223 is a pneumatic cylinder. The driving member 223 is installed on the clamping arm 23, and the clamping arm 23 is used to connect with an external mechanical arm to drive the wafer taking device 20 to change the orientation. The driving member 223 drives the connecting arm 222 and the two clamping pieces 221 to move along the length direction of the abutting surface 211. When the two clamping pieces 221 on the connecting arm 222 are close to the other two clamping pieces 221, the four clamping pieces 221 are in contact with the outer periphery of the wafer to form a clamping state. When the two clamping pieces 221 on the connecting arm 222 are away from the other two clamping pieces 221, the wafer is released. In other alternative embodiments, the driving member 223 can be a linear motor, a hydraulic structure or other known driving structure.

[0100] In the embodiment, the clamping member 221 is in a cylindrical structure, and the axial direction of the clamping member 221 is perpendicular to the bonding surface 211. The clamping member 221 is in contact with the outer circumferential surface of the wafer to clamp and fix the wafer. In other alternative embodiments, the clamping member 221 can be in an elliptical cylinder, a cuboid, or other shapes, and the specific shape of the clamping member 221 can be set based on actual clamping requirements. In addition, the clamping member 221 can be made of elastic materials, such as rubber, silicone, etc., to prevent damage to the wafer.

[0101] In the embodiment, the clamping assembly 22 includes four clamping members 221, two of which are fixed, and the other two are movably arranged. In other alternative embodiments, the clamping assembly 22 can include three, five, or more clamping members 221, and at least one of the clamping members 221 is arranged to move in a direction parallel to the bonding surface 211.

[0102] Please continue to refer to Figure 3 As shown, the wafer stripping device further includes a heating member 50 arranged on the wafer taking body 21 for heating the bonding surface 211.

[0103] In the embodiment, the heating member 50 is a heating resistance wire which is arranged inside the wafer taking body 21 for heating the bonding surface 211 to facilitate separation of the wafer from the bonding surface 211. In other alternative embodiments, the heating member 50 can use a liquid heating method, for example, a heating cavity is arranged inside the wafer taking body 21, and high-temperature liquid is injected into the heating cavity to heat the bonding surface 211. The specific structure of the heating member 50 can be set based on actual heating requirements, and the heating temperature of the heating member 50 can be set based on actual heating requirements, for example, the heating temperature is set to 25-50°C. In addition, the position of the heating member 50 can also be adjusted based on actual requirements, for example, the heating member 50 can be arranged on the back of the bonding surface 211 of the wafer taking body 21.

[0104] Please refer to Figure 2 As shown, the wafer stripping device further includes a protective cover 60 arranged on the workbench 30 for covering the wafers and exposing only the wafer to be taken.

[0105] The protective cover 60 is in a nearly "C" shape structure, and the opening side covers the workbench 30, so that all the wafers after cutting the wafer rod are located in the protective cover 60. Figure 2The right side opening of the protective cover 60 is arranged so that the wafer on the rightmost side is exposed outside the protective cover 60, and the wafer on the rightmost side is the wafer to be taken out. The support 40 and the wafer peeling device 10 are arranged at the right side position of the workbench 30, so that the outlet 114 of the wafer peeling device 10 faces the bonding position of the wafer on the rightmost side. The arrangement of the protective cover 60 exposes only the bonding position of the wafer to be taken out and the surface of the wafer, so that the mixture sprayed by the wafer peeling device 10 does not adhere to other wafers, thereby reducing the influence on other wafers.

[0106] Please continue to refer to Figure 2 As shown in the figure, the workbench 30 includes a workpiece plate carrier 31, a linear motor 32 and a linear guide rail 33. The workpiece plate carrier 31 has a hollow area in the middle, the workpiece plate is carried on the workpiece plate carrier 31, and the wafers bonded on the workpiece plate carrier 31 are suspended downward in the hollow area.

[0107] The linear guide rail 33 is arranged on the workpiece plate carrier 31, and the linear guide rail 33 is arranged on both sides of the hollow area of the workpiece plate carrier 31. The workpiece plate is carried on the linear guide rail 33, and the linear motor 32 can drive the workpiece plate to move along the linear guide rail 33.

[0108] In combination Figure 2 As shown in the figure, when the wafer on the rightmost side is peeled off, the linear motor 32 pushes the workpiece plate to the right to move a distance of the thickness of a wafer, so that the wafer to be peeled off on the rightmost side is exposed outside the protective cover 60, and the continuous wafer peeling action is completed. Through the linear motion of the linear motor 32, the wafer peeling device 10 and the wafer taking device 20 can accurately and efficiently perform the single wafer peeling process. In other alternative embodiments, the linear drive of the workpiece plate along the linear guide rail 33 can also be realized by a rotary motor cooperating with a ball screw.

[0109] Please continue to refer to Figure 2 As shown in the figure, in this embodiment, the wafer taking device 20 is arranged at the end of the mechanical arm 70, and the mechanical arm 70 can adopt an existing multi-degree-of-freedom mechanical arm, which can drive the wafer taking device 20 to change the orientation. For example, the mechanical arm 70 can drive the wafer taking device 20 to move so that the contact surface 211 is in contact with the surface of the wafer to be taken. After the peeling is completed, the mechanical arm 70 rotates and moves in a curve, so as to drive the wafer taking device 20 to clamp the peeled wafer and transport it to a specified position, for example, to move the peeled wafer from the peeling part to the wafer cleaning part for wafer cleaning.

[0110] Please continue to refer to Figure 2 As shown in the figure, in this embodiment, the wafer peeling device further includes a housing 80, the housing 80 has an inner cavity, and the wafer peeling device 10, the wafer taking device 20, the workbench 30 and the mechanical arm 70 are arranged in the inner cavity of the housing 80.

[0111] The shell 80 is provided with an air inlet 81 for supplying clean air flow, and is also provided with an air outlet 82 for sucking the gas inside the shell 80. The air inlet 81 can be provided with a fan to forcibly supply clean air flow, and the air outlet 82 can be provided with a suction fan to forcibly exhaust air.

[0112] During the degumming process, clean air flow can be supplied through the air inlet 81, and air can be forcibly exhausted through the air outlet 82. The air inlet 81 supplies clean air flow to suppress the spraying range of the mixture sprayed by the wafer degumming device 10. A protective cover 60 is arranged in the middle of the degumming position, only the wafer bonding site and the wafer surface to be degummed are exposed, the influence of the sprayed mixture on other wafers is small, and the air outlet 82 is arranged below the degumming position to extract excess mixture, sublimated gas, and pre-detached mortar and dirt. Through the synergistic effect, the flow direction of the sprayed mixture is effectively improved. The arrangement of the air inlet 81, the air outlet 82, and the protective cover 60 can make the sprayed mixture spray and diffuse along the air flow direction, effectively control the spraying range to achieve the purpose of covering the wafer surface, and better suppress the influence of the mixture on other moving mechanisms.

[0113] The wafer stripping device is suitable for wafer degumming and stripping after wire cutting.

[0114] After cutting, the workpiece plate carrying the wafers is first hung parallel on the workbench 30, and each wafer is vertically hung downward under the action of gravity, effectively avoiding the wafer from falling over.

[0115] The wafer taking device 20 is driven to move by the mechanical arm 70, so that the abutting surface 211 abuts against the surface of the wafer to be taken, and then the clamping assembly 22 clamps the outer periphery of the wafer to be taken, so as to fix the wafer to be taken.

[0116] Then, the wafer degumming device 10 sprays the mixture to the bonding position of the wafer to be taken, and the bonding gum is frozen and degummed. Moreover, during the freezing process, the sprayed mixture diffuses along the surface of the wafer to be taken, so that the whole wafer to be taken is cooled. At this time, the mixture freezes the wafer on the abutting surface 211. Since the abutting surface 211 abuts against the wafer, as the frozen mixture sprayed by the wafer degumming device 10 diffuses on the surface of the wafer during the degumming process, the wafer is cooled and its surface condenses to form liquid. The frozen mixture sprays quickly removes the moisture and heat between the abutting surface 211 and the wafer, the moisture quickly freezes under the action of temperature difference, and the ice crystals generated during the freezing process increase the adhesion between the wafer and the abutting surface 211, so that the wafer taking device 20 is firmly clamped under the double action of freezing the abutting surface 211 and the clamping of the air cylinder.

[0117] In addition, the heating element 50 built in the wafer taking device 20 can heat the bonding surface 211, and the ice crystals generated during the wafer stripping can be quickly melted through heat conduction. When the wafer stripping is completed, the mechanical arm 70 drives the wafer taking device 20 to clamp the stripped wafer and transport it to a designated position. The ice crystals on the wafer surface are melted by the heating element 50, which facilitates the separation of the wafer from the bonding surface 211, and the wafer taking and placing action is completed in a closed loop.

[0118] The embodiment also provides a wafer stripping method, which comprises the following steps:

[0119] S1: driving the wafer taking device 20 to move so that the bonding surface 211 is bonded to the surface of a wafer to be taken, and the bonding position of the wafer to be taken is exposed; the wafer taking device 20 is driven to move by the mechanical arm 70, and the structure of the wafer taking device 20 is described in detail above, which will not be repeated here.

[0120] S2: clamping the wafer to be taken in a circumferential direction by the clamping assembly 22; specifically, in the process of bonding the bonding surface 211 to the surface of the wafer to be taken, it is ensured that the two fixed clamping pieces 221 of the clamping assembly 22 are bonded to the outer periphery of the wafer, and the other two movable clamping pieces 221 are driven to move and are bonded to the outer periphery of the wafer, so that the outer periphery of the wafer is clamped in a circumferential direction by the four clamping pieces 221.

[0121] S3: spraying the mixed body to the bonding position of the wafer to be taken by the wafer stripping device 10 to lower the temperature, so that the bonding position is stripped;

[0122] S4: driving the wafer taking device 20 to move, and transferring the wafer to be taken to a designated position. In the transfer process, the bonding surface 211 can be heated by the heating element 50, the ice crystals on the surface of the wafer are melted by the heating element 50, which facilitates the separation of the wafer from the bonding surface 211. Then, the two movable clamping pieces 221 are driven to move, so that the clamping assembly 22 releases the wafer to be taken, and the wafer taking and placing action is completed in a closed loop.

[0123] The embodiments in the specification are described in a progressive manner, and each embodiment focuses on the difference from other embodiments. The same or similar parts between the embodiments can be referred to each other.

[0124] The above description is only a description of the preferred embodiments of the present application, and does not limit the scope of the present application. Any modification or modification made by a person skilled in the art according to the above disclosure is within the protection scope of the claims.

Claims

1. A wafer debonding device, characterized in that, The application relates to a wafer debonding device. The device comprises: a debonding body; a high-pressure gas inlet, a coolant inlet, a mixing cavity and an outlet are arranged on the debonding body; the high-pressure gas inlet is used for feeding high-pressure gas; the coolant inlet is used for feeding coolant; the high-pressure gas inlet and the coolant inlet are communicated with the mixing cavity and used for mixing the high-pressure gas and the coolant to form a mixture; 2. The wafer debonding apparatus of claim 1, wherein the outlet is used for spraying the mixture to cool the bonding position of a wafer.

3. The wafer debonding apparatus of claim 1, wherein The outlet is in the shape of an arc-shaped slit. The high-pressure gas inlet and the outlet are arranged opposite to each other along a first direction, and the high-pressure gas inlet and the outlet are arranged on the two sides of the mixing cavity along the first direction; 4. The wafer debonding apparatus of any of claims 1 to 3, wherein and / or, the coolant inlet is arranged at an angle with the high-pressure gas inlet. An acceleration channel is further arranged on the debonding body, the acceleration channel is connected between the mixing cavity and the outlet, and the radial inner size of the acceleration channel is smaller than the radial inner size of the mixing cavity; 5. The wafer debonding apparatus of claim 1, wherein and / or, the radial inner size of the high-pressure gas inlet is larger than the radial inner size of the acceleration channel.

6. A wafer stripping apparatus characterized by comprising: The coolant is dry ice or liquid nitrogen.

7. The wafer exfoliation apparatus of claim 6, wherein, The application further relates to a wafer debonding device. The wafer stripping device further comprises a wafer taking device and a workbench. The wafer debonding device is arranged on the workbench, and the wafer taking device is arranged to move relative to the workbench. The wafer taking device comprises a wafer taking body and a clamping assembly, the wafer taking body is provided with a fitting surface, the fitting surface is used for fitting on the surface of a wafer to be taken and exposing the bonding position of the wafer to be taken.

8. The wafer exfoliation apparatus of claim 7, wherein, The clamping assembly is arranged to move relative to the fitting surface, and the clamping assembly is used for circumferentially clamping the wafer to be taken when the fitting surface is fitted on the surface of the wafer to be taken. The wafer stripping device further comprises a heating element arranged on the wafer taking body and used for heating the fitting surface.

9. The wafer exfoliation apparatus of claim 7, wherein, The wafer stripping device further comprises a protective cover arranged on the workbench and used for covering the wafer and exposing only the wafer to be taken.

10. A wafer peeling method based on the wafer peeling apparatus according to any one of claims 7 to 9, characterized by, The clamping assembly comprises at least three clamping elements, each clamping element is arranged around the fitting surface, and at least one clamping element is arranged to move along a direction parallel to the fitting surface. The application further relates to a wafer stripping method. S1: driving the wafer taking device to move so that the fitting surface is fitted on the surface of a wafer to be taken and the bonding position of the wafer to be taken is exposed; S2: circumferentially clamping the wafer to be taken by the clamping assembly; S3: spraying the mixture to the bonding position of the wafer to be taken by the wafer debonding device to cool the bonding position and make the bonding position debond; 11. The wafer exfoliation method of claim 10, wherein, S4: driving the wafer taking device to move and transferring the wafer to be taken to a designated position. The step S4 further comprises the following steps: heating the fitting surface, and the clamping assembly releases the wafer to be taken.

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