Preparation method of crystalline gallium oxide thin film through in-situ laser-assisted deposition
By introducing in-situ laser annealing during atomic layer deposition, the problems of amorphous structure and low density of gallium oxide thin films in existing technologies have been solved, enabling the preparation of high-performance crystalline gallium oxide thin films suitable for high-frequency, high-power electronic devices and deep ultraviolet photoelectric sensors.
Patent Information
- Application Number
- CN202511464660.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-14
- Publication Date
- 2026-02-06
AI Technical Summary
Existing atomic layer deposition techniques are difficult to grow crystalline gallium oxide thin films at low temperatures, resulting in low electron mobility and limited carrier concentration, making it difficult to meet the thickness control and crystal quality requirements of high-performance devices.
An in-situ laser-assisted deposition method was adopted, which introduced an in-situ laser annealing process during the deposition of gallium oxide atomic layers. By adjusting the growth cycle and laser annealing conditions, in-situ layer-by-layer annealing and crystal form control of the thin film were achieved.
A crystalline gallium oxide thin film with a thickness accuracy of 0.1 nm was prepared at 300℃, avoiding post-processing steps, facilitating mass production, and realizing the growth and dynamic performance control of high-quality thin films.
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Figure CN121472812A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of semiconductor technology and relates to semiconductor functional thin films, specifically to a method for preparing crystalline gallium oxide thin films by in-situ laser-assisted deposition. Background Technology
[0002] As electronic devices continue to evolve towards higher frequencies, higher power, wider bandgap, and miniaturization, ultrathin oxide semiconductor films are widely considered ideal candidate materials for next-generation high-performance power devices, transparent electronic devices, and ultraviolet detectors. Gallium oxide (Ga₂O₃) is a third-generation semiconductor material with an ultra-wide bandgap (UWBG), theoretically reaching 4.8–5.3 eV, far exceeding conventional oxide semiconductor materials (such as ZnO and SnO₂) and traditional semiconductors (such as Si, GaAs, and GaN). This characteristic gives it extremely broad application potential in high-voltage, high-power, and deep-ultraviolet detection fields. From a physical structure perspective, gallium oxide commonly exhibits five polymorphs: α, β, γ, δ, and ε phases. Among them, β-Ga₂O₃ is the most thermodynamically stable phase, possessing a monoclinic crystal structure, suitable for thin-film fabrication and integration under low-temperature conditions. Its high breakdown electric field strength (theoretical value exceeding 8 MV / cm), intrinsic insulation, and good electron drift velocity make it considered one of the core materials to replace Si and GaN for next-generation power devices. In terms of electrical properties, gallium oxide exhibits high electron mobility (approximately 150 cm² / V•s in single-crystal materials), low leakage current, and high breakdown voltage, making it particularly suitable for device structures such as metal-oxide-semiconductor field-effect transistors, high-frequency rectifiers, Schottky diodes, and RF power transistors. In terms of optical properties, due to its ultra-wide bandgap, it possesses extremely strong response to the deep ultraviolet light band, along with high transmittance and excellent photoelectric conversion efficiency, making it widely used in optoelectronic sensing applications such as solar ultraviolet detectors, deep ultraviolet photodiodes, and environmental monitoring systems. These advanced applications place extremely high demands on the thickness control, structural integrity, crystal quality, and interface quality of gallium oxide thin films.
[0003] Currently, commonly used methods for preparing gallium oxide thin films include pulsed laser deposition (PLD), chemical vapor deposition (CVD), and magnetron sputtering (PVD). These methods have advantages in achieving large-area thin film growth and controlling the structure to a certain extent, but they generally suffer from high processing temperatures, high energy consumption, and difficulty in compatibility with flexible substrates and low thermal budget device fabrication processes. Furthermore, their thickness control precision is poor, making it difficult to meet the requirements for controllable single-layer thickness in nanoscale ultrathin films. They are also prone to introducing stress and defects, making it difficult to guarantee film uniformity and crystal quality, especially at low temperatures. In contrast, atomic layer deposition (ALD), based on a surface self-limiting reaction mechanism, can achieve atomic-level thickness control of the film, exhibiting excellent interlayer uniformity, superior interface control capabilities, and extremely high repeatability, making it one of the preferred technologies for preparing ultrathin oxide semiconductor thin films.
[0004] However, gallium oxide films deposited by conventional ALD technology are typically amorphous or polycrystalline structures with low crystallinity, exhibiting low electron mobility and limited carrier concentration, which severely restricts their performance in practical devices. Therefore, annealing is necessary to improve their crystal quality and electrical properties.
[0005] Existing annealing methods (such as tube furnace annealing and rapid thermal annealing (RTA)) can promote the crystallization of gallium oxide thin films to a certain extent, but they are usually post-processing processes and cannot achieve in-situ control. This process has a low heating / cooling rate and large thermal diffusion, which can easily lead to stress accumulation, interface diffusion and substrate damage. Moreover, it is difficult to integrate with the ALD process, which is not conducive to the dynamic performance regulation and crystal form control during the thin film growth process. Summary of the Invention
[0006] To address the shortcomings of existing technologies, the present invention aims to provide a method for preparing crystalline gallium oxide thin films by in-situ laser-assisted deposition, thereby solving the technical problem that existing atomic layer deposition techniques for preparing nano-gallium oxide thin films cannot grow crystalline gallium oxide.
[0007] To solve the above-mentioned technical problems, the present invention adopts the following technical solution: A method for preparing crystalline gallium oxide thin films by in-situ laser-assisted deposition, the method comprising X crystalline gallium oxide thin film growth cycles; each crystalline gallium oxide thin film growth cycle comprising performing x gallium oxide atomic layer deposition processes and y in-situ laser annealing processes.
[0008] The reaction chamber temperature for the gallium oxide atomic layer deposition process is 300°C.
[0009] The thickness of the crystalline gallium oxide thin film can be as low as 45.66 nm.
[0010] Preferably, X is 100, x is 10, and y is 1.
[0011] Preferably, the thickness of the crystalline gallium oxide thin film is precisely controlled by changing the number of growth cycles X; the control precision of the thickness of the crystalline gallium oxide thin film is 0.1 nm.
[0012] Preferably, the growth environment pressure of the crystalline gallium oxide thin film is maintained in the range of 0.1 to 1 torr.
[0013] Specifically, the gallium oxide atomic layer deposition process is as follows: the reaction chamber temperature is 300°C, trimethylgallium (TMG) is used as the metal precursor, ozone is used as the oxidant, and the reaction is carried out in an alternating injection manner based on the growth substrate. One deposition cycle includes: continuous injection of trimethylgallium or gallium chloride into the reactor for t1 seconds, purging with high-purity nitrogen for t2 seconds, introducing ozone into the reactor for t3 seconds, obtaining a gallium oxide thin film through a surface chemical reaction, and purging with high-purity nitrogen for t4 seconds.
[0014] Specifically, the in-situ laser annealing process is as follows: the maximum laser output power is 1000W, and the power output can be adjusted within the range of 10% to 100%; first, laser irradiation is performed for t5 seconds, and then high-purity nitrogen purging is performed for t6 seconds. Preferably, t1 is 0.1–20 seconds, t2 is 0.1–50 seconds, t3 is 0.1–20 seconds, t4 is 0.1–50 seconds, t5 is 1–50 seconds, and t6 is 1–120 seconds.
[0015] Preferably, the ozone flow rate is controlled at 20–200 mL / min.
[0016] Preferably, the growth substrate includes a monocrystalline silicon wafer or sapphire.
[0017] Furthermore, this method employs a disk-type laser-enhanced atomic layer deposition reactor.
[0018] The disc-type laser-enhanced atomic layer deposition reactor includes an atomic layer deposition reactor body and a laser; the atomic layer deposition reactor body includes a sample chamber, a sample chamber cover is installed on the top of the sample chamber, a gate valve is installed on the top of the sample chamber cover, and a gate valve vacuum flange interface is provided on the top of the gate valve; a laser high-transparency window assembly is installed on the gate valve vacuum flange interface.
[0019] The laser high-transparency window assembly includes a double-layer vacuum upper flange interface, a sealing gasket, a high-transparency window sheet, and a double-layer vacuum lower flange interface arranged coaxially from top to bottom vertically; the double-layer vacuum upper flange interface and the double-layer vacuum lower flange interface are installed on the vacuum flange interface of the slide valve via sealing studs.
[0020] The laser light generated by the laser enters the sample chamber through a high-transparency window and a gate valve.
[0021] Specifically, the laser includes a laser generating and output system, a laser positioning system, and a laser shaping system connected in sequence, with a red guide light module provided on the laser shaping system.
[0022] Compared with the prior art, the present invention has the following technical effects: (I) The method of the present invention eliminates the need for a post-processing high-temperature annealing step, enabling in-situ layer-by-layer annealing during film growth. Controllable fabrication of crystalline gallium oxide nanofilms at 300°C is achieved. The method of the present invention allows for controllable fabrication of thickness and crystal form by changing the number of growth cycles and laser annealing conditions.
[0023] (II) The present invention can prepare crystalline gallium oxide thin films with a film thickness accuracy of 0.1 nm on the surface of heterogeneous substrates such as silicon wafers. The preparation method is relatively convenient, requiring no pre-treatment or post-treatment steps, and is easy to achieve mass production. Attached Figure Description
[0024] Figure 1 The images show the X-ray diffraction patterns of gallium oxide thin films from Examples 1, 1, and 2.
[0025] Figure 2 This is a scanning electron microscope image of the crystalline gallium oxide thin film of Example 1.
[0026] Figure 3 The X-ray photoelectron spectra of the gallium oxide thin films of Example 1 and Comparative Example 1 are shown.
[0027] Figure 4 This is a schematic diagram of the overall structure of the disc-type laser-enhanced atomic layer deposition reactor of the present invention.
[0028] Figure 5 This is a schematic diagram of the structure of a laser high-transparency window assembly.
[0029] The meanings of the labels in the figure are as follows: 1-Atomic layer deposition reactor body, 2-Laser, 3-Gate valve, 4-Gate valve vacuum flange interface, 5-Laser high-transparency window assembly.
[0030] 201-Laser generation and output system, 202-Laser positioning system, 203-Laser shaping system, 204-Red guide light module.
[0031] 501 - Double-layer vacuum upper flange interface with viewing window; 502 - Sealing gasket; 503 - High-transparency window; 504 - Double-layer vacuum lower flange interface with viewing window; 505 - Sealing stud.
[0032] The specific content of the present invention will be further explained in detail below with reference to the embodiments. Detailed Implementation
[0033] It should be noted that, unless otherwise specified, all raw materials, reagents, components and equipment used in this invention are known in the prior art and can be obtained commercially.
[0034] To address the technical problem of the inability to grow crystalline gallium oxide in existing atomic layer deposition (ALD) techniques for preparing nano-gallium oxide thin films, this invention introduces in-situ laser energy during ALD cycles to achieve precise thermal control of the thin film growth process. This effectively overcomes the problems of amorphous structure, low density, and insufficient performance of traditional low-temperature ALD-deposited gallium oxide thin films, thereby preparing functional oxide thin films that meet the requirements of high-performance devices.
[0035] The following are specific embodiments of the present invention. It should be noted that the present invention is not limited to the following specific embodiments. All equivalent modifications made based on the technical solutions of this application fall within the protection scope of the present invention.
[0036] Example 1: This embodiment provides a method for preparing an in-situ laser-assisted deposition crystalline gallium oxide thin film. Specifically, a 45.66 nm thick crystalline gallium oxide thin film is prepared using in-situ laser annealing atomic layer deposition. The method is carried out according to the following steps: Step 1, Preparation: A polished silicon (100) wafer with dimensions of 1cm × 1cm was selected as the substrate. It was ultrasonically cleaned sequentially with acetone, ethanol, and deionized water, each step lasting 15 minutes. After drying, it was placed in an oven at 120℃ for 10 minutes. The treated silicon wafer was then placed in a reaction chamber. The reaction temperature was set to 300℃, and the reaction chamber pressure was maintained at 1 torr. High-purity nitrogen was introduced as the carrier gas at a flow rate of 100 mL / min, and O3 flow rate was 85 mL / min.
[0037] Step 2, growth of crystalline gallium oxide thin films in a single growth cycle: A growth cycle consists of the following two steps: The first step is the gallium oxide atomic layer deposition process. Trimethylgallium is continuously implanted for 1 second, which chemically adsorbs onto the functional groups on the Si surface. After implantation is stopped, nitrogen is purged for 10 seconds to remove excess trimethylgallium and byproducts (containing small carbon molecules) from the reactor. Ozone is then continuously introduced for 15 seconds, which chemically reacts with the gallium-containing functional groups adsorbed on the substrate surface to generate gallium oxide. After implantation is stopped, nitrogen is purged for 10 seconds to remove residual ozone and byproducts (containing small carbon molecules) from the reactor.
[0038] Repeat step one of step two above to complete 10 cycles of cyclic deposition.
[0039] The second step is in-situ laser annealing: Set the laser power to 300W, turn on the laser source, and set the annealing time to 10s. Turn off the laser and purge the sample surface with nitrogen at 100ml / min to achieve thermal equilibrium. The purging time is 90s.
[0040] Repeat step two above to complete one cycle of in-situ laser annealing.
[0041] Step 3, Growth of crystalline gallium oxide thin films in multiple growth cycles: Repeat step two above to complete 100 thin film growth cycles and obtain a crystalline gallium oxide thin film.
[0042] After the crystalline gallium oxide thin film was grown, the sample was allowed to cool naturally to room temperature, then removed and characterized for analysis.
[0043] The thickness was measured to be approximately 45.66 nm using an ellipsometry, and the film thickness uniformity was good (±0.5 nm).
[0044] X-ray diffraction (XRD) showed obvious characteristic diffraction peaks of β-Ga2O3, such as Figure 1 As shown, the successful preparation of crystalline thin films is confirmed.
[0045] Scanning electron microscopy (SEM) shows a smooth surface and uniform particle size, such as Figure 2 As shown.
[0046] X-ray photoelectron spectroscopy (XPS) analysis showed that the Ga / O atomic ratio was close to 2:3, and there was no obvious carbon contamination on the surface. Figure 3 As shown.
[0047] Comparative Example 1: This comparative example provides a thermally enhanced atomic layer deposition (ALD) method for preparing gallium oxide thin films. This method is basically the same as the method in Example 1, except that in this comparative example, the in-situ laser annealing step is missing during the film growth process. This comparative example uses thermally enhanced ALD technology to prepare gallium oxide thin films.
[0048] Step 1, Preparation: A polished silicon (100) wafer with dimensions of 1cm × 1cm was selected as the substrate. It was ultrasonically cleaned sequentially with acetone, ethanol, and deionized water, each step lasting 15 minutes. After drying, it was placed in an oven at 120℃ for 10 minutes. The treated silicon wafer was then placed in a reaction chamber. The reaction temperature was set to 300℃, and the reaction chamber pressure was maintained at 1 torr. High-purity nitrogen was introduced as the carrier gas at a flow rate of 100 mL / min, and O3 flow rate was 85 mL / min.
[0049] Step 2, Thermally Enhanced Gallium Oxide Atomic Layer Deposition: A deposition cycle consists of the following two steps: The first step is gallium oxide atomic layer deposition. Trimethylgallium is continuously implanted for 1 second, which chemically adsorbs onto the functional groups on the Si surface. After implantation is stopped, nitrogen is purged for 10 seconds to remove excess trimethylgallium and byproducts (containing small carbon molecules) from the reactor. The second step is to continuously introduce ozone for 15 seconds, which chemically reacts with the gallium-containing functional groups adsorbed on the substrate surface to generate gallium oxide. After implantation is stopped, nitrogen is purged for 10 seconds to remove residual ozone and byproducts (containing small carbon molecules) from the reactor.
[0050] Repeat step two above to complete 1000 cycles of cyclic deposition.
[0051] Ellipsometry was used to measure and fit the film thickness to 52.80 nm. The gallium oxide film is an amorphous, non-crystalline film (no obvious diffraction peaks in XRD). Figure 1 As shown.
[0052] X-ray photoelectron spectroscopy (XPS) analysis showed that the Ga / O atomic ratio was close to 2:3, and there was no obvious carbon contamination on the surface. Figure 3 As shown.
[0053] Comparative Example 2: This comparative example provides a method for preparing gallium oxide thin films. The other steps and conditions are the same as in Example 1, except that this comparative example uses a laser annealing process after gallium oxide atomic layer deposition, instead of adding in-situ laser annealing during film growth. The results show that the film exhibits initial crystallization, but the crystallization effect is not ideal (XRD shows a small number of diffraction peaks). Figure 1 As shown.
[0054] Example 2: This embodiment provides a method for preparing crystalline gallium oxide thin films by in-situ laser-assisted deposition. Based on Example 1, this method further employs a disk-type laser-enhanced atomic layer deposition reactor.
[0055] Disk-type laser-enhanced atomic layer deposition reactor, such as Figure 4 As shown, it includes an atomic layer deposition reactor body 1 and a laser 2; the atomic layer deposition reactor body 1 includes a sample chamber 101, a sample chamber cover 102 is installed on the top of the sample chamber 101, a gate valve 3 is installed on the top of the sample chamber cover 102, and a gate valve vacuum flange interface 4 is provided on the top of the gate valve 3; a laser high-transparency window assembly 5 is installed on the gate valve vacuum flange interface 4.
[0056] like Figure 5As shown, the laser high-transparency window assembly 5 includes a double-layer vacuum upper flange interface 501, a sealing gasket 502, a high-transparency window 503, and a double-layer vacuum lower flange interface 504 arranged coaxially from top to bottom vertically; the double-layer vacuum upper flange interface 501 and the double-layer vacuum lower flange interface 504 are installed on the vacuum flange interface 4 of the slide valve through sealing studs 505.
[0057] like Figure 4 As shown, the laser generated by laser 2 enters the sample chamber 101 through the high-transparency window 503 and the insert valve 3.
[0058] In this embodiment, the atomic layer deposition reactor body 1 adopts an atomic layer deposition reactor body known in the art.
[0059] As a preferred embodiment of this invention, such as Figure 4 As shown, the high-transparency window 503 is coaxially arranged with the sample cavity 101.
[0060] As a preferred embodiment, the sealing gasket 502 is made of polytetrafluoroethylene.
[0061] In this embodiment, the high-transparency window 503 is made of a material with high transmittance and low absorptivity, the atomic layer deposition reaction pressure in the sample cavity 101 is 0-1000 Pa, and the laser high-transparency window assembly 5 has good vacuum sealing and mechanical strength.
[0062] In this embodiment, the sample chamber 101 is connected to the laser high-transparency window assembly 5 via the insert valve 3. During the ALD process without laser annealing, the insert valve 3 is closed to protect the high-transparency window 503. Conversely, the insert valve 3 is opened to allow the laser to enter the sample chamber 101 through the insert valve 3, which can effectively prevent vapor deposition from contaminating the high-transparency window 503.
[0063] As one specific solution in this embodiment, such as Figure 4 As shown, laser 2 includes a laser generating and output system 201, a laser positioning system 202, and a laser shaping system 203 connected in sequence. A red guiding light module 204 is provided on the laser shaping system 203. In this embodiment, laser 2 uses a laser known in the art. The laser generating and output system 201, laser positioning system 202, laser shaping system 203, and red guiding light module 204 all employ laser generating and output systems, laser positioning systems, laser shaping systems, and red guiding light modules known in the art. The laser output from the laser shaping system 203 enters the sample chamber 101 through a high-transparency window 503 and a valve 3.
[0064] As a preferred embodiment, the maximum output power of the laser generating and output system 201 is 1000W, and the power output can be adjusted within the range of 10% to 100%.
[0065] As a preferred embodiment, the maximum travel of the laser positioning system 202 in the X, Y and Z axes is 80mm, 100mm and 300mm respectively.
[0066] In this embodiment, the laser itself is usually invisible. For safety and ease of operation, the laser has a built-in red guide light module 204 that directly outputs a visible red light spot to indicate the optical path or spot position of the high-power laser. This is used to calibrate the optical path and accurately locate the laser action point on the sample, effectively improving the safety and convenience of laser operation while reducing the risk of accidents.
[0067] In a preferred embodiment, the atomic layer deposition reactor body 1 supplies power to the laser generation and output system 201 via a 24V DC power supply from the ALD valve controller. Laser output / off status is controlled using known ALD control software, achieving in-situ coupling of laser annealing and atomic layer deposition.
[0068] In a preferred embodiment, the atomic layer deposition reactor body 1 supplies power to the circuitry of the gate valve 3 and the carrier gas path via a 24V DC power supply from the ALD valve controller. The gate valve 3 is automatically controlled by known ALD valve control software to drive the carrier gas, thus achieving automatic opening and closing control.
[0069] The implementation of the disc-type laser-enhanced atomic layer deposition reactor in this embodiment includes two laser enhancement modes: layer-by-layer laser annealing enhancement and laser-assisted deposition.
[0070] Layer-by-layer laser annealing enhancement includes: In the first step, the slide gate valve 3 is electrically opened, driving the carrier gas to close. The slide gate valve 3 is in the closed state, the laser generation and output system 201 is shut down, and the atomic layer deposition process is executed.
[0071] In the second step, the slide gate valve 3 is electrically opened, driving the carrier gas to open. The slide gate valve 3 is opened, the laser generation and output system 201 is turned on, and the laser enters the sample chamber 101 through the high-transparency window 503 and the slide gate valve 3 to perform laser in-situ annealing.
[0072] Third, the laser generation and output system 201 is turned off, the gate valve 3 is electrically opened, the driving carrier gas is turned off, and the gate valve 3 is turned off; repeat the above steps to obtain a high-quality crystalline thin film with controllable thickness.
[0073] Laser-assisted deposition includes: The first step involves electrically opening the gate valve 3, driving the carrier gas to close, and placing the gate valve 3 in the closed state. The laser generation and output system 201 is then shut down, and the first reaction precursor is pulsed. After the pulse ends, a purging step is performed to remove the remaining precursor.
[0074] In the second step, the slide gate valve 3 is electrically opened, driving the carrier gas to open. The slide gate valve 3 is opened, the laser generation and output system 201 is turned on, and the laser enters the sample chamber 101 through the high-transparency window 503 and the slide gate valve 3, introducing the second type of reaction precursor.
[0075] The third step involves shutting down the laser generation and output system 201, electrically opening the gate valve 3, shutting down the drive carrier gas, closing the gate valve 3, and performing the purging step.
[0076] Repeat the above steps to obtain a high-quality crystalline thin film with controllable thickness.
[0077] The reactor of this invention deeply couples atomic layer deposition (ALD) system with laser annealing technology, providing hardware support for the precise preparation mode of "layer-by-layer deposition-layer-by-layer annealing" and the idea of strengthening the surface reaction of laser-enhanced deposition. It can perform in-situ (non-transfer) layer-by-layer annealing during the atomic layer deposition process of thin films, effectively avoiding the introduction of impurities into the sample during sample transfer, thus avoiding the introduction of defects and achieving the preparation of high-quality crystalline thin films.
[0078] The reactor of this invention deeply couples laser enhancement with atomic layer deposition technology, has a high degree of automation, can be applied to the controllable deposition of high-quality crystalline nanofilms, and is easy to mass-produce.
Claims
1. A method for preparing crystalline gallium oxide thin films by in-situ laser-assisted deposition, characterized in that, The method includes X crystalline gallium oxide thin film growth cycles; each crystalline gallium oxide thin film growth cycle includes performing x gallium oxide atomic layer deposition processes and y in-situ laser annealing processes; The reaction chamber temperature for the gallium oxide atomic layer deposition process is 300°C. The thickness of the crystalline gallium oxide thin film can be as low as 45.66 nm.
2. The method for preparing in-situ laser-assisted deposition of crystalline gallium oxide thin films as described in claim 1, characterized in that, X is 100, x is 10, and y is 1.
3. The method for preparing in-situ laser-assisted deposition of crystalline gallium oxide thin films as described in claim 1, characterized in that, The thickness of the crystalline gallium oxide thin film is precisely controlled by changing the number of growth cycles X; the control precision of the thickness of the crystalline gallium oxide thin film is 0.1 nm.
4. The method for preparing in-situ laser-assisted deposition of crystalline gallium oxide thin films as described in claim 1, characterized in that, The growth environment pressure of the crystalline gallium oxide thin film is maintained in the range of 0.1 to 1 torr.
5. The method for preparing in-situ laser-assisted deposition of crystalline gallium oxide thin films as described in claim 1, characterized in that, The gallium oxide atomic layer deposition process is as follows: using trimethylgallium as a metal precursor and ozone as an oxidant, based on the growth substrate, an alternating injection reaction is adopted. One deposition cycle includes: continuous injection of trimethylgallium or gallium chloride into the reactor for t1 seconds, purging with high-purity nitrogen for t2 seconds, introducing ozone into the reactor for t3 seconds, causing a surface chemical reaction to obtain a gallium oxide film, and purging with high-purity nitrogen for t4 seconds.
6. The method for preparing in-situ laser-assisted deposition of crystalline gallium oxide thin films as described in claim 5, characterized in that, The in-situ laser annealing process is as follows: the maximum laser output power is 1000W, and the power output can be adjusted within the range of 10% to 100%; first, laser irradiation is performed for t5 seconds, and then high-purity nitrogen purging is performed for t6 seconds.
7. The method for preparing in-situ laser-assisted deposition of crystalline gallium oxide thin films as described in claim 6, characterized in that, t1 is 0.1–20 seconds, t2 is 0.1–50 seconds, t3 is 0.1–20 seconds, t4 is 0.1–50 seconds, t5 is 1–50 seconds, and t6 is 1–120 seconds; The ozone flow rate is controlled to be 20–200 mL / min; The growth substrate includes monocrystalline silicon wafers or sapphire.
8. The method for preparing crystalline gallium oxide thin films by in-situ laser-assisted deposition as described in any one of claims 1 to 7, wherein the method employs a disk-type laser-enhanced atomic layer deposition reactor; The disk-type laser-enhanced atomic layer deposition reactor includes an atomic layer deposition reactor body (1) and a laser (2); the atomic layer deposition reactor body (1) includes a sample chamber (101), and a sample chamber cover (102) is installed on the top of the sample chamber (101). The reactor body is characterized in that... A slide gate valve (3) is installed on the top of the sample chamber cover (102), and a slide gate valve vacuum flange interface (4) is provided on the top of the slide gate valve (3); a laser high-transparency window assembly (5) is installed on the slide gate valve vacuum flange interface (4). The laser high-transparency window assembly (5) includes a double-layer vacuum upper flange interface (501), a sealing gasket (502), a high-transparency window (503), and a double-layer vacuum lower flange interface (504) arranged coaxially from top to bottom vertically; the double-layer vacuum upper flange interface (501) and the double-layer vacuum lower flange interface (504) are installed on the vacuum flange interface (4) of the slide valve through sealing studs (505); The laser generated by the laser (2) enters the sample chamber (101) through the high-transparency window (503) and the insert valve (3).
9. The method for preparing an in-situ laser-assisted deposition crystalline gallium oxide thin film as described in any one of claims 8, characterized in that, The laser (2) includes a laser generating and output system (201), a laser positioning system (202) and a laser shaping system (203) connected in sequence. A red guide light module (204) is provided on the laser shaping system (203).