Conductive film for testing

Abstract

The invention provides a conductive film for testing, and the conductive film comprises a circuit structure which comprises a first metal layer and a second metal layer, and the second metal layer is disposed on the first metal layer; the protruding part is arranged on the circuit structure and protrudes out of the circuit structure; the insulating layer is arranged around the first metal layer and the second metal layer; wherein the protruding part is overlapped with the second metal layer, and at least part of the insulating layer is arranged between the second metal layer and the protruding part.

Description

Technical Field

[0001] This invention relates to a conductive film for testing, and more particularly to a conductive thin film for testing with buffering properties. Background Technology

[0002] The probe card structure or conductive film used for testing is typically connected to a printed circuit board to provide the force required for planarity well contact during testing. However, conventional probe card structures or conductive films for testing lack internal buffering between different metals, making them prone to poor durability and rapid wear after contact and impact; furthermore, conductive films used for wafer testing may scratch the wafer.

[0003] Therefore, there is an urgent need to exhibit a novel probe card structure or a conductive film for testing in order to solve the above problems. Summary of the Invention

[0004] The present invention provides a conductive film for testing, comprising: a circuit structure including a first metal layer and a second metal layer, wherein the second metal layer is disposed on the first metal layer; a protrusion disposed on and protruding from the circuit structure; and an insulating layer disposed around the first metal layer and the second metal layer; wherein the protrusion overlaps the second metal layer, and at least a portion of the insulating layer is disposed between the second metal layer and the protrusion. Attached Figure Description

[0005] Figure 1 This is a schematic diagram of an electronic measurement system including a test conductive film according to an embodiment of the present invention.

[0006] Figure 2 This is a top view schematic diagram of a test conductive film according to an embodiment of the present invention.

[0007] Figure 3 This is a schematic diagram of an electronic measurement system including a conductive film for testing, according to another embodiment of the present invention.

[0008] Figures 4 to 7 This is a partial schematic diagram of the conductive film used for testing according to different embodiments of the present invention.

[0009] Figure 8 This is a cross-sectional schematic diagram of the fabrication process of a test conductive film according to an embodiment of the present invention.

[0010] The meanings of the reference numerals in the above figures are as follows:

[0011] Test conductive film 1; insulating layer 11; circuit structure 12; first metal layer 121; circuit 121a; conductive bump 121b; surface 121c; recess 121d; sidewalls 121S1, 121S2; second metal layer 122; recess 122a; sidewall 122b; protrusion 13; first layer 131; side 131a; second layer 132; surface 132a; insulating layer 14; surface 14a; third metal layer 15; passivation layer 16, 16'; fourth metal layer 17; test head 2; circuit board 21; electrical connection element 22; wire 23; control device 3; test object 4; test pad 41; detection platform 5; carrier plate C; buffer layer C'; temporary substrate C1; bearing film C2; distance D1, D2; Virtual line L1; First thickness T1; Second thickness T2; Thickness T3, T4; Depth R1. Detailed Implementation

[0012] The following describes the implementation of the present invention through specific embodiments. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed in various ways for different viewpoints and applications without departing from the spirit of the invention.

[0013] It should be noted that, unless otherwise specified herein, the presence of an element "a" is not limited to having a single element, but may include one or more of the elements. The ordinal numbers used in the specification and claims, such as "first" and "second," to modify elements of a claim, do not in themselves imply or represent any prior ordinal number for that claimed element, nor do they represent the order of one claimed element with another, or the order of manufacture. The use of these ordinal numbers is solely to clearly distinguish one claimed element with a given name from another claimed element with the same name.

[0014] Throughout this specification and the appended claims, certain terms are used to refer to specific elements. Those skilled in the art will understand that electronic device manufacturers may use different names to refer to the same element. This document is not intended to distinguish between elements that have the same function but different names. In the following specification and claims, words such as “comprising,” “containing,” and “having” are open-ended terms and should therefore be interpreted as “containing but not limited to…”. Thus, when the terms “comprising,” “containing,” and / or “having” are used in the description of this invention, they specify the presence of the corresponding feature, area, step, operation, and / or component, but do not exclude the presence of one or more of the corresponding feature, area, step, operation, and / or component.

[0015] In this text, the terms "about," "approximately," "substantially," and "roughly" typically indicate that a given value or range is within 10%, 5%, 3%, 2%, 1%, or 0.5%. The given quantity is an approximate quantity; that is, even without specific mention of "about," "approximately," "substantially," or "roughly," the meaning of these terms is implied. Furthermore, the phrases "range from the first value to the second value" or "range between the first value and the second value" indicate that the range includes the first value, the second value, and other values ​​in between.

[0016] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It is understood that these terms, such as those defined in commonly used dictionaries, shall be interpreted as having a meaning consistent with the background or context of the relevant art and the present invention, and shall not be interpreted in an idealized or overly formal manner, unless specifically defined herein.

[0017] Furthermore, relative terms such as "below" or "bottom" and "above" or "top" may be used in the embodiments to describe the relative relationship of one element to another in the figures. It is understood that if the apparatus in the figures is flipped upside down, the element described as being on the "below" side will become the element on the "above" side. When a corresponding component (e.g., a membrane or region) is referred to as "on another component," it can be directly on the other component, or there may be other components between them. On the other hand, when a component is referred to as "directly on another component," there are no components between them. Additionally, when a component is referred to as "on another component," there is a vertical relationship between them in the top view, and this component can be above or below the other component, depending on the orientation of the apparatus.

[0018] In this invention, the distance, width, length, and thickness can be measured using an optical microscope or from cross-sectional images in an electron microscope, but the invention is not limited to these methods. Furthermore, any two values ​​or directions used for comparison may have a certain degree of error. If the first value equals the second value, it implies an error of approximately 10% between the two values; if the first direction is perpendicular to the second direction, the angle between the first and second directions may be between 80 and 100 degrees; if the first direction is parallel to the second direction, the angle between the first and second directions may be between 0 and 10 degrees.

[0019] It should be noted that the technical solutions provided in the different embodiments below can be substituted for, combined or mixed with each other to constitute another embodiment without violating the spirit of the present invention.

[0020] Figure 1 This is a schematic diagram of an electronic measurement system including a conductive film for testing, according to an embodiment of the present invention. Figure 1 In the diagram, except for the control device 3, all other components are shown in cross-sectional view.

[0021] like Figure 1 As shown, the electronic measurement system of the present invention includes: a conductive film 1 for testing; a test head 2 with a circuit board 21 disposed above it, wherein the conductive film 1 for testing is electrically connected to the circuit board 21 via an electrical connection element 22; and a control device 3 electrically connected to the test head 2. In one embodiment, the electrical connection element 22 may be a solder ball; however, the present invention is not limited thereto. When using... Figure 1 When the electronic measurement system shown detects a test object 4, the control device 3 can control the test head 2 to move towards the test object 4, so that the test conductive film 1 connected to the test head 2 can come into contact with the test object 4. The control device 3 can provide a detection signal to the test head 2, which then transmits the detection signal to the test conductive film 1 to detect the test object 4. Afterwards, the obtained detection signal can be transmitted back to the test head 2 through the test conductive film 1, and then to the control device 3.

[0022] In one embodiment, the test object 4 may be a semiconductor device, such as a wafer. In another embodiment, the test object 4 may be an electronic device, such as a display device, sensing device, antenna device, touch device, splicing device, or other suitable electronic device, but is not limited thereto. The display device of the present invention may be a non-emissive display device or a self-emissive display device, such as a liquid crystal display, a cholesterol liquid crystal display, an electrophoretic display, an organic light-emitting diode display, or a light-emitting diode display, but is not limited thereto. The display device may include light-emitting diodes, light conversion layers, or other suitable materials, or combinations thereof, but is not limited thereto. Light-emitting diodes may include, for example, organic light-emitting diodes (OLEDs), sub-millimeter light-emitting diodes (mini LEDs), micro LEDs, or quantum dot LEDs (including QLEDs and QDLEDs), but are not limited thereto. The light conversion layer may include wavelength conversion materials and / or filter materials. The light conversion layer may include, for example, fluorescence, phosphorescence, quantum dots (QD), other suitable materials, or combinations thereof, but is not limited thereto. The sensing device may include, for example, a biosensor, a touch sensor, a fingerprint sensor, other suitable sensors, or combinations of the above types of sensors. The antenna device may be, for example, a liquid crystal antenna or other types of antennas, but is not limited thereto. The splicing device may include, for example, a splicing display device or a splicing antenna device, but is not limited thereto. The electronic device may include electronic components, which may include passive components, active components, or combinations thereof, such as capacitors, resistors, inductors, varactor diodes, variable capacitors, filters, diodes, transistors, sensors, microelectromechanical systems (MEMS) components, chips, etc., but is not limited thereto. It should be noted that the electronic device of the present invention may be various combinations of the above devices, but is not limited thereto. The electronic device of the present invention may be applied, for example, to power modules and semiconductor packaging devices, but is not limited thereto.Electronic devices may include, but are not limited to, System on a Chip (SoC), System in a Package (SiP), Antenna in Package (AiP), or various combinations of the above.

[0023] Next, the structure of the test conductive film 1 of the present invention will be described.

[0024] In one embodiment, such as Figure 1 As shown, the conductive film 1 for testing according to the present invention includes: a circuit structure 12 including a first metal layer 121 and a second metal layer 122, wherein the second metal layer 122 is disposed on the first metal layer 121; a protrusion 13 disposed on the circuit structure 12 and protruding from the circuit structure 12; and an insulating layer 14 disposed around the first metal layer 121 and the second metal layer 122; wherein the protrusion 13 overlaps the second metal layer 122, and at least a portion of the insulating layer 14 is disposed between the second metal layer 122 and the protrusion 13.

[0025] In this invention, the conductive film 1 for testing may further include another insulating layer 11 and a third metal layer 15, wherein the insulating layer 11 and the third metal layer 15 may be disposed under the circuit structure 12, and the third metal layer 15 may be electrically connected to the circuit structure 12. In other embodiments of this invention, although not shown in the figures, the conductive film 1 for testing may further include other insulating layers and metal layers to achieve the purpose of circuit redistribution and / or further increase the fan-out area of ​​the circuit.

[0026] In this invention, the material of the insulating layer 11 may include, for example, silicon oxide, silicon nitride, silicon oxynitride, ceramic materials, glass, silicon wafers or other suitable materials or combinations thereof, but the invention is not limited thereto.

[0027] In this invention, the elongation of the insulating layer 14 can be between 20% and 900%. When the elongation of the insulating layer 14 is within the aforementioned range, by providing at least a portion of the insulating layer 14 between the second metal layer 122 and the protrusion 13, the at least portion of the insulating layer 14 can provide cushioning characteristics similar to an elastomer, thereby mitigating the impact of contact loss on the test conductive film 1 and improving the durability of the test conductive film 1. According to some embodiments, the rigidity of the insulating layer 11 can be greater than that of the insulating layer 14, and the elongation of the insulating layer 11 can be less than that of the insulating layer 14, so that the insulating layer 11 can provide support and thus extend the service life of the test conductive film 1, but this is not a limitation.

[0028] In this invention, the elongation of the insulating layer 14 can be tested using a universal testing machine. Here, the elongation of the insulating layer 14 can be the elongation at break, where the elongation at break is the percentage of total elongation at break, and it can be used as an indicator of material plasticity; the higher the elongation at break, the stronger the plasticity of the plastic. Alternatively, the elongation of the insulating layer 14 can be the elongation at yield, where the elongation at yield is the elongation ratio at the yield point, which is the longest elongation before permanent deformation occurs.

[0029] In this invention, the elongation of the insulation layer 14 can also be tested using other test methods, such as ASTM D3039 / D3039M (Standard Test Methods for Polymer-Based Composite Materials), ASTM D638 (Standard Test Methods for Tensile Properties of Plastics), ASTM D828 (Standard Test Methods for Paper and Paperboard, Using a Constant Elongation Apparatus), ASTM D882 (Standard Test Methods for Tensile Properties of Plastic Sheets), or ISO 37 (Rubber, Hardened or Thermoplastic – Determined Tensile Stress-Strain Properties); however, this invention is not limited thereto.

[0030] In this invention, the insulating layer 14 may comprise polyimide, photoresist, silane, polymer, epoxy resin, a combination thereof, or other suitable materials. In one embodiment, the insulating layer 14 may comprise polyimide. However, the invention is not limited thereto; as long as the elongation of the insulating layer 14 material meets the foregoing conditions, it can provide the cushioning properties of an elastomer.

[0031] In this invention, the first metal layer 121, the second metal layer 122, and the third metal layer 15 may have a single-layer or multi-layer structure, and the materials may respectively include metallic materials, metal oxide materials, alloys thereof, or combinations thereof, such as gold, silver, copper, palladium, platinum, ruthenium, aluminum, cobalt, nickel, titanium, molybdenum, manganese, indium zinc oxide (IZO), indium tin oxide (ITO), indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO), aluminum zinc oxide (AZO), or combinations thereof, but the invention is not limited thereto. In one embodiment of the invention, the material of the first metal layer 121 is copper. In one embodiment of the invention, the material of the second metal layer 122 is nickel.

[0032] In the present invention, at least part of the insulating layer 14 has a first thickness T1, the second metal layer 122 has a second thickness T2, and the ratio of the first thickness T1 to the second thickness T2 is greater than or equal to 0.1 and less than or equal to 0.5 (0.1 ≦ T1 / T2 ≦ 0.5). In addition, the second metal layer 122 has a recess 122a, and at least part of the insulating layer 14 is disposed in the recess 122a; wherein, the recess 122a is located on a sidewall 122b of the second metal layer 122. According to some embodiments, the extending direction of the recess 122a is perpendicular to the normal direction (Z direction) of the test conductive film 1, and the width of the recess 122a is tapered, whereby this design can provide buffering.

[0033] In the present invention, when at least part of the insulating layer 14 is disposed in the recess 122a on the sidewall 122b of the second metal layer 122, since the insulating layer 14 has a certain elongation rate, at least part of the insulating layer 14 can provide buffer characteristics similar to an elastomer, thereby reducing the influence of the contact loss of the test conductive film 1 and improving the durability of the test conductive film 1. Specifically, in the normal direction (Z direction) of the test conductive film 1, at least part of the second metal layer 122, between at least part of the protrusions 13 and at least part of the insulating layer 14 overlap each other and form a sandwich structure, that is, at least part of the insulating layer 14 is disposed between at least part of the second metal layer 122 and at least part of the protrusions 13.

[0034] In the present invention, the first thickness T1 of at least part of the insulating layer 14 is the maximum thickness of at least part of the insulating layer 14 from a surface 121c of the first metal layer 121 to the protrusion 13. In the present invention, the "first thickness T1 of at least part of the insulating layer 14" and the "second thickness T2 of the second metal layer 122" are respectively the maximum thicknesses of at least part of the insulating layer 14 (more specifically, the insulating layer 14 disposed in the recess 122a on the sidewall 122b of the second metal layer 122) and the second metal layer 122 measured in the normal direction (for example, the Z direction) of the test conductive film 1.

[0035] In the present invention, the protrusion 13 may include a first layer 131 and a second layer 132. The first layer 131 is disposed between the second metal layer 122 and the second layer 132, and the thickness T4 of the second layer 132 is less than the thickness T3 of the first layer 131 (that is, T4 < T3). In the present invention, the "thickness T4 of the second layer 132" and the "thickness T2 of the first layer 131" are respectively the maximum thicknesses of the first layer 131 and the second layer 132 measured in the normal direction (for example, the extending direction of the virtual line L1 along the Z direction) of the test conductive film 1.

[0036] In the present invention, the second layer 132 of the protrusion 13 may contact one side edge 131a of the first layer 131 of the protrusion 13. In an embodiment of the present invention, the second layer 132 of the protrusion 13 may at least partially cover the side edge 131a of the first layer 131 exposed outside the insulating layer 14. In an embodiment of the present invention, the second layer 132 of the protrusion 13 may completely cover the side edge 131a of the first layer 131 exposed outside the insulating layer 14.

[0037] In the present invention, the materials of the first layer 131 and the second layer 132 of the protrusion 13 may be metal materials respectively, for example, may include gold, silver, copper, palladium, platinum, ruthenium, aluminum, cobalt, nickel, titanium, molybdenum, manganese or their alloys. In an embodiment of the present invention, the hardness (HD2) of the second layer 132 of the protrusion 13 may be less than the hardness (HD1) of the first layer 131 of the protrusion 13 (i.e., HD2 < HD1). In an embodiment of the present invention, the resistivity (R2) of the second layer 132 of the protrusion 13 may be less than the resistivity (R1) of the first layer 131 of the protrusion 13 (i.e., R2 < R1). In an embodiment of the present invention, the material of the first layer 131 of the protrusion 13 may be palladium, and the material of the second layer 132 of the protrusion 13 may be gold; however, the present invention is not limited thereto.

[0038] In the present invention, a surface 121c of the first metal layer 121 has a recess 121d, and at least a part of the second metal layer 122 is disposed in the recess 121d. In another embodiment of the present invention, although not shown in the figure, the surface 121c of the first metal layer 121 may have a plurality of recesses 121d and present a wavy shape. When the surface 121c of the first metal layer 121 has a recess 121d or presents a wavy shape, the second metal layer 122 and the protrusion 13 formed above the first metal layer 121 may also have a recess or present a wavy shape. Thus, the contact effect between the conductive film 1 for testing and the object to be tested 4 can be improved.

[0039] In this invention, the depth R1 of the recess 121d can be greater than or equal to 0.2 μm and less than or equal to 10 μm (0.2 μm ≤ R1 ≤ 10 μm). In this invention, the "depth R1 of the recess 121d" can be the maximum depth of the recess 121d measured in the normal direction (e.g., the Z direction) of the conductive film 1 for testing. According to some embodiments, the hardness of the first layer 131 of the protrusion 13 is greater than that of the second metal layer 122. When the hardness of the first layer 131 of the protrusion 13 is greater than that of the second metal layer 122, better contact quality can be achieved during testing. In addition, when the second metal layer 122 has a recess design, the stress caused by downward pressure during testing can be buffered, which can avoid damage to the conductive film 1 for testing or extend the service life of the conductive film 1 for testing, but this is not a limitation. Furthermore, when the hardness of the first layer 131 of the protrusion 13 is greater than that of the second metal layer 122 and the second layer 132 of the protrusion 13, the conductive film 1 used for testing can have good contact and buffering properties during measurement, but this is not a limitation.

[0040] In this invention, the circuit structure 12 of the conductive film 1 for testing can be, for example, a redistribution layer, and may include at least one conductive layer (e.g., a first metal layer 121 and a third metal layer 15) and at least one insulating layer (e.g., insulating layer 11 and insulating layer 14) to redistribute the lines and / or further increase the fan-out area of ​​the lines. The purpose of the redistribution layer is to extend the interconnects to a wider spacing or to reroute the interconnects to another interconnect with a different spacing. Furthermore, in one embodiment of the invention, as Figure 1 As shown, the first metal layer 121 may include a conductive bump 121b and a line 121a, the conductive bump 121b and the line 121a are electrically connected, and the second metal layer 122 is disposed on the conductive bump 121b.

[0041] In this invention, the positions of the second metal layer 122 and the protrusion 13 on the conductive bump 121b of the first metal layer 121 are not particularly limited. The second metal layer 122 and the protrusion 13 may be located in the center of the conductive bump 121b or not in the center of the conductive bump 121b. For example, in one embodiment of this invention, such as Figure 1 As shown, the second metal layer 122 and the protrusion 13 may not be disposed in the center of the conductive bump 121b. That is, on the cross-section of the test conductive film 1, the distance D1 between the second metal layer 122 and the sidewall 121S1 of the first metal layer 121 is not equal to another distance D2 between the second metal layer 122 and the sidewall 121S2 of the first metal layer 121, but the present invention is not limited thereto.

[0042] In addition, Figure 1In this embodiment, the conductive film 1 for testing includes three protrusions 13, but the invention is not limited thereto. The conductive film 1 for testing can be designed with different numbers of protrusions 13 depending on the testing requirements.

[0043] Figure 2 This is a top view schematic diagram of a test conductive film according to an embodiment of the present invention. The cross-section of the test conductive film 1 can be shown as follows. Figure 1 As shown, this will not be repeated here. Furthermore, as... Figure 2 As shown, the conductive film 1 for testing may include a plurality of lines 121a and a plurality of conductive bumps 121b. Some of the lines 121a and conductive bumps 121b may be electrically connected to each other, while some of the lines 121a and conductive bumps 121b may be electrically insulated from each other. In one embodiment of the present invention, some of the conductive bumps 121b may also serve as redundant bumps; however, the present invention is not limited thereto.

[0044] Figure 3 This is a schematic diagram of an electronic measurement system including a conductive film for testing, according to another embodiment of the present invention. Figure 3 In the diagram, all components except for the control device 3 are shown in top view.

[0045] like Figure 3 As shown, the electronic measurement system includes: a conductive film 1 for testing; a test head 2 with a circuit board 21 disposed on top of it, wherein the conductive film 1 for testing is electrically connected to the circuit board 21 via a wire 23; and a control device 3, electrically connected to the test head 2. The conductive film 1 for testing can be as described above and will not be repeated here.

[0046] In this embodiment, the test object 4 is placed on a detection platform 5 for detection, but the invention is not limited thereto. Furthermore, the test object 4 may also include a test pad 41. During detection, a conductive film 1 for testing can be disposed on the test pad 41 and electrically connected to the test pad 41. When using... Figure 3 When the electronic measurement system shown detects a test object 4, the control device 3 can provide a detection signal to the test head 2, which then transmits the detection signal to the conductive film 1 for testing the test object 4. The obtained detection signal can then be transmitted back to the test head 2 via the conductive film 1, and then to the control device 3. The test object 4 can be as described above, and will not be repeated here.

[0047] Figure 4 This is a partial schematic diagram of a test conductive film according to an embodiment of the present invention. The test conductive film of this embodiment is similar to... Figure 1 The test conductive film is similar, except for the following differences.

[0048] like Figure 4As shown, in this invention, the surface 132a of the second layer 132 of the protrusion 13 may be arc-shaped. Furthermore, the distance D1 between the second metal layer 122 and the sidewall 121S1 of the first metal layer 121 may be equal to another distance D2 between the second metal layer 122 and the sidewall 121S2 of the first metal layer 121, but this invention is not limited thereto. The remaining features of the conductive film for testing according to this invention are as described above and will not be repeated here.

[0049] Figure 5 This is a partial schematic diagram of a test conductive film according to an embodiment of the present invention. The test conductive film of this embodiment is similar to... Figure 1 The test conductive film is similar, except for the following differences.

[0050] like Figure 5 As shown, in this invention, the surface 132a of the second layer 132 of the protrusion 13 can be flat; thus, the contact effect between the conductive film 1 for testing and the test object 4 can be improved. The remaining features of the conductive film for testing according to this invention are as described above and will not be repeated here.

[0051] Figure 6 This is a partial schematic diagram of a test conductive film according to different embodiments of the present invention. The test conductive film in this embodiment is similar to... Figure 1 The test conductive film is similar, except for the following differences.

[0052] like Figure 6 As shown, in this invention, the surface 132a of the second layer 132 of the protrusion 13 may be arc-shaped. Furthermore, the conductive film for testing in this invention may also include a passivation layer 16 disposed on the exposed surface 14a of the insulating layer 14. More specifically, the passivation layer 16 may be disposed on the surface 14a of the insulating layer 14 that is not covered by other layers, for example, on the surface 14a in contact with the outside world. In this invention, the passivation layer 16 can serve as a water vapor barrier layer, wherein the water vapor transmission rate of the passivation layer 16 may be lower than that of the insulating layer 14, reducing concerns that the insulating layer 14 may absorb moisture, further reducing the expansion and contraction problems of the conductive film for testing, and thus improving the service life of the conductive film for testing.

[0053] In this invention, the passivation layer 16 may have a single-layer or multi-layer structure. Furthermore, the passivation layer 16 may comprise organic materials, inorganic materials, or combinations thereof. For example, the passivation layer 16 may comprise silicon oxide, silicon nitride, silicon oxynitride, epoxy resin, polymer, or combinations thereof. In one embodiment of this invention, the passivation layer 16 may be a silicon nitride layer, a silicon oxide layer, or a combination thereof. In another embodiment of this invention, the passivation layer 16 may be a stacked structure of inorganic material-organic material-inorganic material, for example, a three-layer structure of silicon nitride-colloid-silicon nitride.

[0054] In this invention, the thickness of the passivation layer 16 can be between 10 nm and 5 μm (10 nm ≤ thickness ≤ 5 μm). The remaining features of the conductive film for testing in this invention are as described above and will not be repeated here.

[0055] Figure 7 This is a partial schematic diagram of the conductive film used for testing according to different embodiments of the present invention.

[0056] In one embodiment, such as Figure 7 As shown, the conductive film for testing according to the present invention includes: a circuit structure 12 including a first metal layer 121 and a second metal layer 122, wherein the second metal layer 122 is disposed on the first metal layer 121; a protrusion 13 disposed on and protruding from the circuit structure 12; and an insulating layer 14 disposed around the first metal layer 121 and the second metal layer 122; wherein the protrusion 13 overlaps the second metal layer 122, and at least a portion of the insulating layer 14 is disposed between the first metal layer 121 and the protrusion 13. According to some embodiments, the term "A surrounds B" in the present invention means that, in the cross-sectional direction, element A contacts at least a portion of the side of element B.

[0057] In this invention, the first metal layer 121 may include a plurality of conductive bumps 121b and a plurality of lines 121a, the conductive bumps 121b being electrically connected to the lines 121a, and the second metal layer 122 being disposed on the conductive bumps 121b. In this invention, at least a portion of the insulating layer 14 is disposed between adjacent conductive bumps 121b, and as described above, the insulating layer 14 has a certain elongation, thus at least a portion of the insulating layer 14 can provide buffering characteristics similar to an elastomer, thereby mitigating the impact of contact loss on the test conductive film 1 and improving the durability of the test conductive film 1.

[0058] In this invention, three conductive bumps 121b are electrically connected to each other and bonded together on the surface 14a of the insulating layer 14, and then the second metal layer 122 and the protrusion 13 are formed thereon. However, the invention is not limited to this, and multiple conductive bumps 121b can be electrically connected to each other and bonded together on the surface 14a of the insulating layer 14, depending on the requirements.

[0059] In this invention, the conductive film for testing may further include a fourth metal layer 17, disposed below and electrically connected to the third metal layer 15. The material of the fourth metal layer 17 may refer to that of the aforementioned third metal layer 15, and will not be described again here.

[0060] In this invention, the conductive film for testing may further include a carrier plate C, disposed under the circuit structure 12. When the conductive film for testing includes a carrier plate C, the support or operability of the conductive film for testing can be improved. The elongation of the carrier plate C may be less than 20%. Furthermore, the material of the carrier plate C may include glass, quartz, sapphire, ceramic, polycarbonate (PC), polyimide (PI), polypropylene (PP), polyethylene terephthalate (PET), polymethyl methacrylate (PMMA), other suitable materials, or combinations thereof, but the invention is not limited thereto. When the carrier plate C includes organic materials, the elongation of the carrier plate C can be adjusted by adding filler particles between the organic material layers. The filler particles may include oxides, nitrides, or carbides, but are not limited thereto.

[0061] In this invention, the conductive film for testing may further include a buffer layer C' disposed between the circuit structure 12 and the carrier plate C. The material of the buffer layer C' may include, for example, silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or combinations thereof, but the invention is not limited thereto. The remaining features of the conductive film for testing according to this invention are as described above and will not be repeated here.

[0062] Figure 8 This is a cross-sectional schematic diagram of the fabrication process of a test conductive film according to an embodiment of the present invention.

[0063] First, a temporary substrate C1 is provided, and a carrier plate C is disposed on the temporary substrate C1. The temporary substrate C1 may be made of glass, quartz, sapphire, ceramic, polycarbonate (PC), polyimide (PI), polypropylene (PP), polyethylene terephthalate (PET), polymethyl methacrylate (PMMA), other suitable materials, or combinations thereof, but the invention is not limited thereto. The material of the carrier plate C is as described above and will not be repeated here. In one embodiment of the invention, the temporary substrate C1 may be a glass substrate, and the carrier plate C may be a polyimide substrate; however, the invention is not limited thereto.

[0064] Subsequently, a buffer layer C' is formed on the carrier plate C, and the buffer layer C' may cover all surfaces of the carrier plate C except the surface facing the temporary substrate C1, but the present invention is not limited thereto. In other embodiments of the present invention, the buffer layer C' may only cover the upper surface opposite to the surface facing the temporary substrate C1. The material of the buffer layer C' is as described above and will not be repeated here. In one embodiment of the present invention, the buffer layer C' may include silicon nitride; however, the present invention is not limited thereto.

[0065] Next, a plurality of lines 121a are formed on the buffer layer C', and then a plurality of conductive bumps 121b are formed on the lines 121a, thus forming the first metal layer 121. The material of the first metal layer 121 is as described above and will not be repeated here. In one embodiment of the present invention, the first metal layer 121 may be a copper metal layer; however, the present invention is not limited thereto.

[0066] After the first metal layer 121 is formed, an insulating layer 14 is formed on the first metal layer 121, and the insulating layer 14 is also formed between adjacent lines 121a and adjacent conductive bumps 121b. The material of the insulating layer 14 is as described above and will not be repeated here. In one embodiment of the present invention, the insulating layer 14 may include polyimide; however, the present invention is not limited thereto.

[0067] Subsequently, a passivation layer 16 is formed on the insulating layer 14; wherein the passivation layer 16 is formed on the surface of the insulating layer 14 that is not covered by other layers, for example, the surface in contact with the outside. Furthermore, the passivation layer 16 is also formed on the side surface of the carrier plate C, and more specifically, the passivation layer 16 is also formed on the buffer layer C' on the side surface of the carrier plate C. The material of the passivation layer 16 is as described above and will not be repeated here. In one embodiment of the present invention, the passivation layer 16 may be a stacked structure of inorganic material-organic material-inorganic material, for example, a three-layer structure of silicon nitride-colloid-silicon nitride; however, the present invention is not limited thereto.

[0068] After the patterned insulating layer 14 and passivation layer 16 are formed, the second metal layer 122 and the protrusions 13 (e.g., including...) are formed sequentially. Figure 1 The first layer 131 and the second layer 132 are shown. The materials of the second metal layer 122 and the protrusion 13 are as described above and will not be repeated here. In one embodiment of the present invention, the second metal layer 122 may be a nickel metal layer, and the protrusion 13 may be a palladium-gold stacked metal layer.

[0069] Next, a carrier film C2 is formed on the second metal layer 122 and the protrusion 13; wherein, the material of the carrier film C2 may refer to the aforementioned temporary substrate C1 or carrier plate C material, and will not be described again here. In one embodiment of the present invention, the carrier film C2 is a polyimide film; however, the present invention is not limited thereto.

[0070] After flipping the structure on the temporary substrate C1, another passivation layer 16' is formed on the surface of the carrier plate C. The material of the passivation layer 16' can be referenced from the material of the aforementioned passivation layer 16, and will not be repeated here. In one embodiment of the present invention, the material of the passivation layer 16' can be similar to the material of the passivation layer 16, both being a stacked structure of inorganic material-organic material-inorganic material (e.g., a three-layer structure of silicon nitride-colloidal-silicon nitride); however, the present invention is not limited thereto.

[0071] Finally, by removing the temporary substrate C1 and the carrier film C2, the test conductive film of the present invention can be obtained. In the present invention, the formed test conductive film includes a carrier plate C, which can improve the support or operability of the test conductive film. However, in other embodiments of the present invention, the test conductive film may not include the carrier plate C; wherein, the carrier plate C may be removed, for example, after the structure on the temporary substrate C1 is flipped and before the passivation layer 16' is formed.

[0072] like Figure 7As shown, in one embodiment of the present invention, the passivation layer 16 and passivation layer 16' of the conductive film for testing may have a stacked structure of inorganic material-organic material-inorganic material, for example, a three-layer structure of silicon nitride-colloidal-silicon nitride; therefore, it can prevent the organic material from absorbing water, so as to prevent the conductive film for testing from being affected by the environment during use and causing poor alignment between the conductive film for testing and the test object.

[0073] In this invention, suitable methods can be used to form the aforementioned layers. Suitable methods may include, for example, electroplating, chemical plating, chemical vapor deposition, physical vapor deposition, atomic deposition (ALD), sputtering, lamination, coating, photolithography, lift-off technology, or combinations thereof, but this invention is not limited thereto. The "coating method" may be, for example, dip coating, spin coating, roller coating, blade coating, spray coating, or combinations thereof, but this invention is not limited thereto.

[0074] In summary, in the conductive test film provided by the present invention, at least a portion of the insulating layer is disposed between the metal layer and the protrusion. Therefore, at least a portion of the insulating layer can provide buffering properties similar to an elastomer, thereby mitigating the impact of contact loss on the conductive test film and improving the durability of the conductive test film.

[0075] The specific embodiments described above should be interpreted as merely illustrative and not as limiting the remainder of the invention in any way.

Claims

1. A conductive film for testing, characterized in that, include: A circuit structure includes a first metal layer and a second metal layer, wherein the second metal layer is disposed on the first metal layer; A protrusion is provided on the circuit structure and protrudes from the circuit structure; as well as An insulating layer is disposed around the first metal layer and the second metal layer; The protrusion overlaps the second metal layer, and at least a portion of the insulating layer is disposed between the second metal layer and the protrusion.

2. The conductive film for testing according to claim 1, characterized in that, At least a portion of the insulating layer has a first thickness, the second metal layer has a second thickness, and the ratio of the first thickness to the second thickness is greater than or equal to 0.1 and less than or equal to 0.

5.

3. The conductive film for testing according to claim 1, characterized in that, The first metal layer has a recess on one surface, and at least a portion of the second metal layer is disposed in the recess.

4. The conductive film for testing according to claim 1, characterized in that, The protrusion includes a first layer and a second layer, the first layer being disposed between the second metal layer and the second layer, and the second layer being in contact with one side of the first layer.

5. The conductive film for testing according to claim 1, characterized in that, The protrusion includes a first layer and a second layer, the first layer being disposed between the second metal layer and the second layer, and the hardness of the second layer being less than that of the first layer.

6. The conductive film for testing according to claim 1, characterized in that, It also includes a passivation layer disposed on the surface of the exposed insulating layer.

7. The conductive film for testing according to claim 1, characterized in that, The elongation of the insulation layer ranges from 20% to 900%.

8. The conductive film for testing according to claim 1, characterized in that, The second metal layer has a recess, and at least a portion of the insulating layer is disposed in the recess.

9. The conductive film for testing according to claim 8, characterized in that, The recess is located on one side wall of the second metal layer.

10. The conductive film for testing according to claim 1, characterized in that, The first metal layer includes a conductive bump and a circuit, the conductive bump being electrically connected to the circuit, and the second metal layer being disposed on the conductive bump.

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