Flow guide ring and plasma processing device

Abstract

The invention discloses a flow guide ring and a plasma processing device, the flow guide ring is arranged in a reaction cavity of the plasma processing device, a base for bearing a wafer is arranged in the reaction cavity, and the flow guide ring comprises an airflow guide part, an exhaust part and a connecting part; the airflow guide part is arranged around the base; the exhaust part is located below the airflow guide part, and a first air channel is formed in the exhaust part; the connecting part is connected with the airflow guiding part and the exhaust part, and a second air channel is formed in the connecting part. According to the flow guide ring and the plasma processing device, the exhaust part of the flow guide ring is arranged below the airflow guide part, so that the exhaust area is far away from the area above the base, the influence of airflow flowing near the exhaust part on the change of air pressure above the base is reduced, and the uniformity of air pressure of different areas above a wafer on the base is improved; and the processing uniformity of each part on the wafer is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, and more particularly to a current-guiding ring and a plasma processing apparatus. Background Technology

[0002] In semiconductor manufacturing, wafers are typically etched or processed within a vacuum-sealed reaction chamber. Existing reaction chambers typically have a base in the center to support the wafer. Above the base are a gas supply device and an RF (Radio Frequency) feed assembly. The RF feed assembly works in conjunction with the gas supply device to generate plasma above the wafer. A vacuum pump is located on one side of the bottom of the reaction chamber. To prevent uneven plasma pressure above the wafer due to unilateral vacuuming, a guide ring surrounds the base. This guide ring has vertically oriented vacuum channels that evacuate the area above the wafer within the reaction chamber.

[0003] However, this design results in uneven gas pressure in the area above the flow guide ring, with drastic changes in the gas pressure gradient above the wafer edge. Ultimately, this leads to inconsistent reaction results across different parts of the wafer.

[0004] In addition, in order to ensure the confinement of the plasma in the reaction chamber, the exhaust channel of the guide ring structure needs to have a high aspect ratio. The high aspect ratio of the exhaust channel will cause the reaction byproducts to be unable to be discharged in time, and in severe cases, it will cause the exhaust channel to be blocked, affecting the exhaust.

[0005] Therefore, a flow guide ring solution is needed that can ensure uniform gas pressure near the wafer as much as possible. Summary of the Invention

[0006] The purpose of this invention is to provide a flow guide ring and a plasma processing device, which have the advantages of high gas guiding efficiency and minimal impact on gas pressure changes near the base.

[0007] To achieve the above objectives, the present invention provides a flow guide ring disposed within the reaction chamber of a plasma processing apparatus. The reaction chamber contains a base for supporting a wafer. The flow guide ring comprises:

[0008] An airflow guide is disposed around the base;

[0009] An exhaust section is located below the airflow guide section, and a first air passage is provided on the exhaust section;

[0010] A connecting part connects the airflow guide part and the exhaust part, and a second air passage is provided on the connecting part.

[0011] Optionally, the aspect ratio of the first airway is greater than that of the second airway.

[0012] Optionally, the depth-to-width ratio of the first airway is in the range of 2-20, and the depth-to-width ratio of the second airway is in the range of 1-10.

[0013] Optionally, the second air passage is disposed at one end of the connecting portion near the exhaust portion and covers 30%-70% of the surface of the connecting portion.

[0014] Optionally, the width of the airflow guide portion is 1 / 5 to 1 / 3 of the horizontal width between the base and the inner wall of the reaction chamber.

[0015] Optionally, the first airway includes a plurality of first ventilation slots arranged in concentric rings.

[0016] Optionally, the first air passage includes a plurality of first air holes arranged circumferentially along the exhaust portion.

[0017] Optionally, the second air passage includes a plurality of annular second vent grooves arranged axially along the connecting portion; or the second air passage includes a plurality of second air holes arranged axially along the connecting portion.

[0018] Optionally, the angle between the connecting part and the airflow guide part is a right angle.

[0019] Optionally, the angle between the connecting part and the airflow guide part is an obtuse angle.

[0020] The present invention also provides a plasma processing apparatus, the plasma processing apparatus comprising:

[0021] reaction chamber;

[0022] A base is disposed within the reaction chamber, the base being used to place the wafer;

[0023] A gas supply device is connected to the reaction chamber to supply reaction gas into the reaction chamber for processing the wafer;

[0024] As described above, the guide ring is connected to the base and the inner wall of the reaction chamber, respectively, and is used to exhaust the gas after the reaction to the outside of the reaction chamber.

[0025] Optionally, the bottom side of the reaction chamber is provided with an air extraction port, and the exhaust portion of the flow guide ring is provided with a first air passage. The depth-to-width ratio of the first air passage near the airflow guide portion is greater than the depth-to-width ratio of the first air passage away from the airflow guide portion.

[0026] Optionally, the connecting portion of the guide ring is provided with a second air passage, and the aspect ratio of the second air passage near the airflow guide portion is greater than the aspect ratio of the second air passage away from the airflow guide portion.

[0027] Optionally, the bottom side of the reaction chamber is provided with an air extraction port, and the exhaust portion of the guide ring is provided with a first air passage. The aspect ratio of the first air passage near the air extraction port is greater than the aspect ratio of the first air passage away from the air extraction port.

[0028] Optionally, the connecting portion of the guide ring is provided with a second air passage, and the aspect ratio of the second air passage near the air intake is greater than the aspect ratio of the second air passage away from the air intake.

[0029] In summary, compared with the prior art, the flow guiding ring and plasma processing device provided by the present invention have the following beneficial effects:

[0030] The guide ring and plasma processing apparatus of the present invention, by placing the exhaust portion of the guide ring below the airflow guide portion, makes the exhaust area far away from the area above the base, reduces the influence of airflow near the exhaust portion on the air pressure change above the base, improves the uniformity of air pressure in different areas above the wafer on the base, and improves the uniformity of processing at various points on the wafer. Attached Figure Description

[0031] Figure 1 A schematic diagram of the existing flow guide ring and plasma processing device.

[0032] Figure 2 This is a schematic diagram of the flow guide ring and plasma processing device of the present invention.

[0033] Figure 3 This is a top view of the first air passage of the guide ring of the present invention, including the first air groove.

[0034] Figure 4 This is a top view of the first air passage of the guide ring of the present invention, including the first air hole.

[0035] Explanation of reference numerals in the attached figures:

[0036] 100' guide ring

[0037] Plasma processing device 200'

[0038] Base 210'

[0039] Gas supply unit 230'

[0040] 240° exhaust port

[0041] 100mm guide ring

[0042] Airflow guide 110

[0043] Exhaust section 120

[0044] First airway 121

[0045] First ventilation slot 1211

[0046] First pore 1212

[0047] Connecting part 130

[0048] Second airway 131

[0049] Plasma processing device 200

[0050] Base 210

[0051] Inner wall 220

[0052] Gas supply unit 230

[0053] 240 air extraction port

[0054] Wafer W Detailed Implementation

[0055] The following will be combined with the appendix in the embodiments of the present invention. Figures 1-4 The technical solutions, structural features, objectives and effects achieved in the embodiments of the present invention will be described in detail.

[0056] It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions. They are only used to facilitate and clarify the purpose of illustrating the embodiments of the present invention, and are not intended to limit the implementation conditions of the present invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportional relationship, or adjustments to the size should still fall within the scope of the technical content disclosed in the present invention, provided that they do not affect the effects and objectives that the present invention can produce.

[0057] It should be noted that, in this invention, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only the expressly listed elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus.

[0058] like Figure 1As shown, the existing plasma processing device 200' has a base 210' supporting the wafer W inside its reaction chamber, a gas supply device 230' positioned above and opposite the base 210', and a flow guide ring 100' surrounding the base 210'. The flow guide ring 100' divides the area inside the reaction chamber into a reaction area above the flow guide ring 100' and a non-reaction area below the flow guide ring 100'. A gas extraction port 240' is located at the bottom of the reaction chamber, and a gas extraction pump is connected to the outside of the gas extraction port 240'.

[0059] Gas supply device 230' supplies reactive gas to the reaction chamber, which is used to process wafer W. Under the suction of the vacuum pump, the gas that has completed the reaction in the reaction area above the guide ring 100' flows to the non-reaction area below the guide ring 100' through the gas channels provided on the guide ring 100'. In the reaction area above the guide ring 100', the gas flow effect is stronger closer to the guide ring 100', resulting in lower gas pressure in the area closer to the guide ring 100' and forming a pressure difference along the radial direction of the reaction chamber. This causes different gas pressures at different locations above wafer W, resulting in different concentrations of reactive gas above wafer W and reduced consistency of reaction results at different locations on wafer W.

[0060] like Figure 2 As shown, the present invention provides a flow guide ring 100. The flow guide ring 100 is disposed within the reaction chamber of a plasma processing apparatus 200, and a base 210 for supporting a wafer W is provided within the reaction chamber. The flow guide ring 100 includes an airflow guide portion 110, an exhaust portion 120, and a connecting portion 130. The airflow guide portion 110 is disposed around the base 210, the exhaust portion 120 is located below the airflow guide portion 110, and the connecting portion 130 connects the airflow guide portion 110 and the exhaust portion 120. The airflow guide portion 110 located inside the flow guide ring 100 is connected to the base 210, and the exhaust portion 120 located outside the flow guide ring 100 is connected to the inner wall 220 of the reaction chamber. The flow guide ring 100 divides the interior of the reaction chamber of the plasma processing apparatus 200 into a reaction region located above the flow guide ring 100 and a non-reaction region located below the flow guide ring 100.

[0061] The airflow guide 110 guides the reaction gas flow radially from above the wafer W to above the exhaust section 120. The airflow flowing above the exhaust section 120 then flows vertically downward through the connecting section 130 to the exhaust section 120 and is finally discharged outside the reaction chamber. The airflow guide 110 is arranged circumferentially along the base 210, so that the exhaust section 120 is horizontally away from the base 210, and the gas pressure change radially along the reaction chamber is more gradual in the horizontal direction, thereby reducing the gas pressure non-uniformity on the wafer W caused by the exhaust of the exhaust section 120 in the horizontal direction.

[0062] The connecting portion 130 connects the airflow guide portion 110 and the exhaust portion 120. The connecting portion 130 is a ring-shaped structure arranged vertically. The upper end of the connecting portion 130 is connected to the airflow guide portion 110, and the lower end of the connecting portion 130 is connected to the exhaust portion 120. Therefore, the exhaust portion 120 is arranged vertically lower than the airflow guide portion 110. During the exhaust process, the reaction gas first flows horizontally from above the wafer W along the airflow guide portion 110 to the outer periphery of the reaction chamber. Then, under the guidance of the connecting portion 130, the reaction gas flows vertically downward to the exhaust portion 120, and finally exits the reaction chamber from the exhaust portion 120. As the airflow flows from above the wafer W to the exhaust portion 120, the gas becomes rarefied and the gas pressure is lower closer to the exhaust portion 120. Therefore, the pressure difference between the gas pressure near the exhaust portion 120 and the gas pressure above the wafer W is greater. Therefore, by providing the connecting part 130 in the vertical direction, the exhaust part 120 is moved away from the base 210 in the vertical direction, which increases the pressure change area of ​​the reaction region in the reaction chamber in the vertical direction, making the pressure change between the wafer top W and the exhaust part 120 more gradual, thereby reducing the pressure unevenness of the wafer top W caused by the exhaust of the exhaust part 120 in the vertical direction.

[0063] The exhaust section 120 has a first air passage 121 for gas to flow through it, so as to discharge the gas that has completed the reaction in the reaction area of ​​the reaction chamber to the non-reaction area located below the guide ring. The exhaust section 120 is vertically arranged below the airflow guide section 110, so that the first air passage 121 on the exhaust section 120 is far away from the area above the base 210, reducing the impact of the pressure drop above the base 210 caused by the exhaust of the first air passage 121 on the exhaust section 120, which may lead to inconsistent reaction results at different locations on the wafer W.

[0064] In addition, a second air passage 131 is provided on the connecting part 130 to further increase the effective exhaust area on the guide ring 100, improve the overall exhaust performance of the guide ring 100, and exhaust more gas from the reaction area in the same time. For processes that require rapid exhaust, a higher exhaust rate can exhaust the gas in the reaction chamber more quickly, thereby reducing the amount of gas remaining in the reaction chamber.

[0065] High-energy plasma exists in the reaction zone of the plasma processing device. Another function of the guide ring 100 is to prevent plasma from entering the non-reaction zone. If plasma passes through the guide ring 100, its effective energy above the wafer W will decrease, resulting in a reduction in the wafer processing rate. Simultaneously, if plasma passes through the guide ring 100, its charged particles will bombard other components in the non-reaction zone, causing damage. To avoid this, the first air duct 121 or the second air duct 131 on the guide ring 100 needs to be configured with a high aspect ratio structure so that the plasma can be annihilated during its passage through the guide ring 100.

[0066] The first air passage 121 is vertically disposed on the exhaust section 120. The ratio of the vertically downward velocity component to the horizontal velocity component of the plasma needs to be greater than the aspect ratio of the first air passage 121 for it to pass vertically through the first air passage 121. To ensure the annihilation effect of the first air passage 121 on the plasma and to prevent the plasma from passing through the first air passage 121 and bombarding other components in the non-reactive area, in this embodiment, the aspect ratio of the first air passage 121 is in the range of 2-20.

[0067] The second gas duct 131 is arranged horizontally or slightly inclined (at an angle of less than 10°) on the connecting portion 130. Plasma from above the base 210 needs a horizontal velocity component radially inward along the reaction chamber to enter the second gas duct 131. For plasma to pass horizontally through the second gas duct 131, the ratio of the horizontal velocity component to the vertical velocity component radially inward along the reaction chamber needs to be greater than the depth-to-width ratio of the second gas duct 131. Plasma from above the wafer W needs a horizontal velocity component radially outward along the reaction chamber to flow along the airflow guide portion 110 to the area above the exhaust portion 120. Therefore, compared to the first gas duct 121, it is more difficult for plasma to enter and escape from the second gas duct 131. Therefore, while satisfying the requirement of plasma annihilation, the depth-to-width ratio of the second gas duct 131 can be smaller than that of the first gas duct 121. The smaller aspect ratio of the second air passage 131 can improve gas flow efficiency and increase the overall gas guiding rate of the guide ring 100. In this embodiment, the aspect ratio of the second air passage 131 ranges from 1 to 10.

[0068] In other embodiments, the aspect ratio of the second airway 131 may be set to be the same as that of the first airway 121.

[0069] The second air passage 131 is provided at one end of the connecting portion 130 near the exhaust portion 120, so that the second air passage 131 is far away from the airflow guide portion 110, reducing the influence of airflow near the second air passage 131 on the air pressure change above the airflow guide portion 110, and reducing the influence of the air pressure drop above the base 210 caused by the exhaust of the second air passage 131 on the connecting portion 130, which leads to inconsistent reaction results at various places on the wafer W.

[0070] The second air duct 131 covers 30%-70% of the surface of the connecting portion 130. The second air duct 131 covers at least 30% of the surface of the connecting portion 130 from the exhaust portion 120 upwards to ensure the exhaust effect of the second air duct 131 provided on the connecting portion 130. The second air duct 131 covers at most 70% of the surface of the connecting portion 130 from the exhaust portion 120 upwards to avoid the second air duct 131 also being provided at the top of the connecting portion 130 near the airflow guide portion 110. The second air duct 131 near the airflow guide portion 110 would cause an excessive impact on the air pressure above the base 210, increasing the air pressure inconsistency between the areas near and away from the airflow guide portion 110 above the base 210, resulting in inconsistent reaction results at different locations on the wafer W.

[0071] The width of the airflow guide 110 is 1 / 5 to 1 / 3 of the horizontal width between the base 210 and the inner wall 220 of the reaction chamber. After the gas in the reaction chamber participates in the reaction in the area above the base 210, it flows along the airflow guide 110 and the connecting part 130 to the exhaust part 120. The exhaust part 120 is provided with a first air passage 121 for exhaust. As a result, the air pressure near the exhaust part 120 will change significantly. In order to minimize the impact of the air pressure change near the exhaust part 120 on the air pressure change above the base 210, the width of the airflow guide 110 is set to be 1 / 5 to 1 / 3 of the horizontal width between the base 210 and the inner wall 220 of the reaction chamber. This width of the airflow guide 110 can ensure the horizontal flow effect of the gas above the base 210, while the exhaust part 120 below has enough horizontal width to set the first air passage 121, ensuring the exhaust effect of the exhaust part 120.

[0072] In one embodiment, such as Figure 3 As shown, the first air passage 121 includes a plurality of first venting grooves 1211 arranged in concentric rings. Each first venting groove 1211 is a narrow, elongated groove formed on the exhaust portion 120. The first venting grooves 1211 are arranged circumferentially around the exhaust portion 120, and a plurality of annular first venting grooves 1211 are arranged radially along the exhaust portion 120. The arrangement of a plurality of concentric annular first venting grooves 1211 on the exhaust portion 120 increases the opening area of ​​the first air passage 121 on the exhaust portion 120, reduces the resistance of the exhaust portion 120 to gas flow, and increases the exhaust rate. In embodiments where the first air passage 121 is a first venting groove 1211, the depth-to-width ratio of the first air passage 121 is the ratio of the depth of the first venting groove 1211 to its radial width.

[0073] In another embodiment, such as Figure 4As shown, the first air passage 121 includes a plurality of first air holes 1212 arranged circumferentially along the exhaust portion 120. The first air holes 1212 can be arranged in a ring around the circumference of the exhaust portion 120. Multiple rings of first air holes 1212 can be provided on the exhaust portion 120, and the multiple rings of first air holes 1212 are arranged radially along the exhaust portion 120 to provide as many first air holes 1212 as possible, thereby increasing the opening area of ​​the first air holes 1212 on the exhaust portion 120, reducing the resistance to gas flow, and increasing the exhaust rate. In the embodiment where the first air passage 121 is the first air hole 1212, the depth-to-width ratio of the first air passage 121 is the ratio of the depth of the first air hole 1212 to the diameter of the first air hole 1212.

[0074] In one embodiment, the second air passage 131 includes a plurality of annular second vent grooves arranged axially along the connecting portion 130. Each second vent groove is an elongated groove formed on the connecting portion 130, and is arranged horizontally around the circumference of the connecting portion 130. A plurality of annular second vent grooves are also arranged along the height of the connecting portion 130. The arrangement of multiple concentric annular second vent grooves on the connecting portion 130 increases the opening area of ​​the second air passage 131 on the connecting portion 130, reduces the resistance of the connecting portion 130 to gas flow, and improves the exhaust rate.

[0075] In another embodiment, the second air passage 131 includes a plurality of second air holes arranged axially along the connecting portion 130. The second air holes are arranged in a circumferential ring on the connecting portion 130, and multiple rings of second air holes can be provided on the connecting portion 130. These multiple rings of second air holes are arranged vertically on the connecting portion 130 to provide as many second air holes as possible, thereby increasing the opening area of ​​the second air holes on the connecting portion 130, reducing resistance to gas flow, and increasing the exhaust rate.

[0076] In this embodiment, the angle between the connecting portion 130 and the airflow guiding portion 110 is a right angle, such as... Figure 2 The included angle A between the connecting part 130 and the airflow guide part 110 is 90°.

[0077] In other embodiments, the included angle between the connecting portion 130 and the airflow guiding portion 110 is an obtuse angle, that is, the included angle A between the connecting portion 130 and the airflow guiding portion 110 is an obtuse angle greater than 90°, and an angle between 90° and 110° can be selected.

[0078] Continue as Figure 2As shown, the present invention also provides a plasma processing apparatus 200, which includes a reaction chamber, a base 210, a gas supply device 230, and the aforementioned flow guide ring 100. The base 210 is disposed within the reaction chamber and is used to place a wafer W. The gas supply device 230 is disposed opposite to the base 210 and connected to the reaction chamber to supply reaction gas into the reaction chamber. The reaction gas is used to process the wafer W. The flow guide ring 100 is connected to the base 210 and the inner wall 220 of the reaction chamber. A first gas channel 121 is formed on the exhaust portion 120 of the flow guide ring 100, and a second gas channel 131 is formed on the connecting portion 130, for discharging the reacted gas outside the reaction chamber.

[0079] A suction port 240 communicating with the non-reaction area is provided on one side of the bottom of the reaction chamber. A suction pump is connected to the outside of the suction port 240, and the suction pump draws the gas discharged through the guide ring 100 through the suction port 240. The first air passage 121 provided on the exhaust section 120 of the guide ring 100 has a greater depth-to-width ratio near the airflow guide section 110 than the depth-to-width ratio of the first air passage 121 far away from the airflow guide section 110.

[0080] Specifically, in the embodiment where the first air passage 121 is the first ventilation groove 1211, the thickness of the exhaust portion 120 is the same at all locations along the circumference of the reaction chamber, and the width of the first ventilation groove 1211 near the airflow guide portion 110 is smaller than the width of the first ventilation groove 1211 away from the airflow guide portion 110, so that the depth-to-width ratio of the first ventilation groove 1211 near the airflow guide portion 110 is greater than the depth-to-width ratio of the first ventilation groove 1211 away from the airflow guide portion 110.

[0081] In the embodiment where the first air passage 121 is the first air hole 1212, the thickness of the exhaust portion 120 is the same at all locations along the circumference of the reaction chamber. The diameter of the first air hole 1212 near the airflow guide portion 110 is smaller than the diameter of the first air hole 1212 away from the airflow guide portion 110, so that the depth-to-width ratio of the first air hole 1212 near the airflow guide portion 110 is greater than the depth-to-width ratio of the first air hole 1212 away from the airflow guide portion 110.

[0082] The second air passage 131 provided on the connecting portion 130 of the guide ring 100 has a greater aspect ratio near the airflow guide portion 110 than that of the second air passage 131 farther from the airflow guide portion 110. The method for setting the different aspect ratios of the second air passage 131 at different distances from the airflow guide portion 110 is the same as the method for setting the aspect ratio of the first air passage 121, and will not be described again here.

[0083] Due to the suction effect of the air pump, the pressure in the non-reactive region at the lower part of the guide ring 100 is significantly lower than that in the reactive region at the upper part of the guide ring 100. The aspect ratio of the first air passage 121 and the second air passage 131 near the airflow guide 110 is greater than that of the first air passage 121 and the second air passage 131 away from the airflow guide 110. By controlling the air extraction speed in different regions of the guide ring 100, that is, by making the air extraction speed near the airflow guide 110 lower than that away from the airflow guide 110, the drastic pressure change at the edge of the wafer W caused by air extraction can be reduced. This reduces the pressure non-uniformity on the wafer W caused by exhaust in the radial direction, thereby improving the uniformity of processing on all parts of the wafer W.

[0084] Furthermore, the aspect ratio of the first airway 121 near the air intake 240 is greater than that of the first airway 121 far from the air intake 240.

[0085] Specifically, in the embodiment where the first air passage 121 is the first venting groove 1211, the thickness of the exhaust portion 120 is the same at all locations along the circumference of the reaction chamber, and the width of the first venting groove 1211 near the exhaust port 240 is smaller than the width of the first venting groove 1211 away from the exhaust port 240, so that the depth-to-width ratio of the first venting groove 1211 near the exhaust port 240 is greater than the depth-to-width ratio of the first venting groove 1211 away from the exhaust port 240.

[0086] In the embodiment where the first air passage 121 is the first air hole 1212, the thickness of the exhaust portion 120 is the same at all locations along the circumference of the reaction chamber. The diameter of the first air hole 1212 near the exhaust port 240 is smaller than the diameter of the first air hole 1212 away from the exhaust port 240, so that the depth-to-width ratio of the first air hole 1212 near the exhaust port 240 is greater than the depth-to-width ratio of the first air hole 1212 away from the exhaust port 240.

[0087] The connecting portion 130 of the guide ring 100 is provided with a second air passage 131. The aspect ratio of the second air passage 131 near the air intake 240 is greater than that of the second air passage 131 far from the air intake 240. The method for setting the different aspect ratios of the second air passage 131 at different distances from the air intake 240 is the same as the method for setting the aspect ratio of the first air passage 121, and will not be described again here.

[0088] Due to the suction effect of the air pump, the suction effect on the gas in the reaction chamber is stronger near the air extraction port 240, resulting in lower gas pressure in the reaction chamber area near the air extraction port 240. The suction effect on the gas in the reaction chamber further away from the air extraction port 240 is weaker than that near the air extraction port 240, resulting in higher gas pressure in the reaction chamber compared to the area near the air extraction port 240. To avoid uneven gas pressure caused by different distances between the reaction chamber and the air extraction port 240, the depth-to-width ratio of the first air passage 121 and the second air passage 131 near the air extraction port 240 is greater than that of the first air passage 121 and the second air passage 131 far away from the air extraction port 240, thereby reducing the uneven gas pressure caused by different distances from the air extraction port 240 at different locations inside the reaction chamber.

[0089] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A flow guide ring, characterized in that, The flow guiding ring is disposed within the reaction chamber of the plasma processing device, and the reaction chamber is provided with a base for supporting the wafer. The flow guiding ring includes: An airflow guide is disposed around the base; An exhaust section is located below the airflow guide section, and a first air passage is provided on the exhaust section; a connecting section connects the airflow guide section and the exhaust section, and a second air passage is provided on the connecting section.

2. The guide ring as described in claim 1, characterized in that, The aspect ratio of the first airway is greater than that of the second airway.

3. The guide ring as described in claim 1 or 2, characterized in that, The depth-to-width ratio of the first airway ranges from 2 to 20, and the depth-to-width ratio of the second airway ranges from 1 to 10.

4. The guide ring as described in claim 1, characterized in that, The second air passage is located at one end of the connecting portion near the exhaust portion and covers 30%-70% of the surface of the connecting portion.

5. The guide ring as described in claim 1, characterized in that, The width of the airflow guide is 1 / 5 to 1 / 3 of the horizontal width between the base and the inner wall of the reaction chamber.

6. The guide ring as described in claim 1, characterized in that, The first airway includes a plurality of first ventilation slots arranged in concentric rings.

7. The guide ring as described in claim 1, characterized in that, The first air passage includes a plurality of first air holes arranged circumferentially along the exhaust portion.

8. The guide ring as described in claim 1, characterized in that, The second air passage includes a plurality of annular second vent grooves arranged axially along the connecting portion; or the second air passage includes a plurality of second air holes arranged axially along the connecting portion.

9. The guide ring as described in claim 1, characterized in that, The angle between the connecting part and the airflow guide part is a right angle.

10. The guide ring as described in claim 1, characterized in that, The angle between the connecting part and the airflow guide part is an obtuse angle.

11. A plasma processing apparatus, characterized in that, The plasma processing device includes: reaction chamber; A base is disposed within the reaction chamber, the base being used to place the wafer; A gas supply device is connected to the reaction chamber to supply reaction gas into the reaction chamber for processing the wafer; The flow guide ring as described in any one of claims 1-10, wherein the flow guide ring is respectively connected to the base and the inner wall of the reaction chamber, and is used to exhaust the gas after the reaction to the outside of the reaction chamber.

12. The plasma processing apparatus as claimed in claim 11, characterized in that, The bottom side of the reaction chamber is provided with an air extraction port, and the exhaust part of the flow guide ring is provided with a first air passage. The depth-to-width ratio of the first air passage near the airflow guide is greater than the depth-to-width ratio of the first air passage away from the airflow guide.

13. The plasma processing apparatus as described in claim 12, characterized in that, The connecting portion of the flow guide ring is provided with a second air passage, and the aspect ratio of the second air passage closer to the airflow guide portion is greater than the aspect ratio of the second air passage farther away from the airflow guide portion.

14. The plasma processing apparatus as claimed in claim 11, characterized in that, The bottom side of the reaction chamber is provided with an air extraction port, and the exhaust part of the guide ring is provided with a first air passage. The depth-to-width ratio of the first air passage near the air extraction port is greater than the depth-to-width ratio of the first air passage away from the air extraction port.

15. The plasma processing apparatus as described in claim 14, characterized in that, The connecting part of the guide ring is provided with a second air passage, and the depth-to-width ratio of the second air passage near the air intake is greater than that of the second air passage away from the air intake.

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