Preparation method of glass interposer through hole electrode and glass interposer through hole electrode
By forming a barrier layer in the glass interposer via electrode using a remote plasma chemical vapor deposition process, the problems of uniform coverage and copper diffusion that are difficult to achieve with traditional techniques are solved, thereby improving the reliability and coverage of the glass interposer via electrode.
Patent Information
- Application Number
- CN202511701615.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-19
- Publication Date
- 2026-02-13
AI Technical Summary
Traditional deposition techniques struggle to achieve uniform coverage in glass interposer via electrodes, and copper readily diffuses into the glass substrate, necessitating a high-quality, low-temperature barrier layer to ensure reliability.
A barrier layer is formed at low temperature using a remote plasma chemical vapor deposition process. Active species generated by plasma are uniformly covered on the inner sidewall of the via. The barrier layer physically isolates the electrode material from the glass substrate. Barrier layer materials such as TiN and TaN can be deposited at rates of tens of nanometers per minute.
The formation of a dense and continuous barrier layer at low temperatures ensures that the electrode material does not diffuse, thereby improving the long-term reliability and coverage of the glass interposer through-hole electrode.
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Figure CN121532017A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor processing technology, and more specifically, to a method for preparing a glass interposer through-hole electrode and the glass interposer through-hole electrode. Background Technology
[0002] In the field of advanced packaging, glass interposers have become a potential alternative to silicon interposers due to their low cost, excellent electrical insulation, and adjustable coefficient of thermal expansion (CTE).
[0003] However, in the through-glass valve (TGV) fabrication process of glass interposers, the TGV electrode has a large depth-to-width ratio, making it difficult to achieve uniform coverage using traditional deposition techniques (such as PVD). The softening point of glass is approximately 500°C, requiring lower temperatures in actual processes to avoid deformation or thermal stress. Furthermore, copper, used as the filler metal for the TGV electrode, readily diffuses into the glass substrate, necessitating a high-quality barrier layer to ensure reliability. Therefore, how to form a low-temperature barrier layer with high coverage has become a pressing problem in this field. Summary of the Invention
[0004] This application provides a method for preparing a glass interposer through-hole electrode and a glass interposer through-hole electrode, aiming to solve the problem of how to form a low-temperature barrier layer with high coverage.
[0005] The first aspect of this application provides a method for preparing a glass interposer through-hole electrode, the method comprising: Provide glass substrates; At least one through hole is formed on the glass substrate, and the aspect ratio of the through hole is greater than 10:1; Based on a remote plasma chemical vapor deposition process, a barrier layer is formed in the via at a first temperature, the barrier layer at least covering the hole wall of the via, and the first temperature is less than or equal to 300°C. An electrode material is formed within the through-hole covered by the barrier layer, the electrode material fills the interior of the through-hole, and the barrier layer physically separates the electrode material from the glass substrate.
[0006] In one alternative embodiment, the material of the barrier layer includes at least one of the following: TiN or TaN.
[0007] In one alternative embodiment, the thickness of the barrier layer is greater than or equal to 5 nm and less than or equal to 30 nm.
[0008] In one alternative embodiment, the step coverage of the barrier layer is greater than 90%, and the deposition rate of the barrier layer is greater than or equal to 5 nm / min and less than or equal to 50 nm / min.
[0009] In one alternative embodiment, the precursor of the barrier layer includes at least one of the following: TiCl4, TaCl3, and NH3.
[0010] In one optional embodiment, the plasma power of the remote plasma chemical vapor deposition process is greater than or equal to 50W and less than or equal to 250W. The pressure of the remote plasma chemical vapor deposition process is greater than or equal to 0.1 Torr and less than or equal to 1 Torr.
[0011] In one alternative embodiment, the glass substrate comprises: alkali-free glass or borosilicate glass.
[0012] In one alternative embodiment, the diameter of the through hole is greater than or equal to 5 μm and less than or equal to 20 μm; the depth of the through hole is greater than or equal to 50 μm and less than or equal to 200 μm.
[0013] A second aspect of this application provides a glass interposer through-hole electrode, wherein the glass interposer through-hole electrode is prepared based on the preparation method of the glass interposer through-hole electrode according to any one of the first aspects of this application, comprising: A glass substrate having at least one through-hole formed thereon; A barrier layer is disposed inside the through hole, and the barrier layer at least covers the hole wall of the through hole; The electrode material fills the interior of the through hole, and the electrode material is physically separated from the glass substrate by the barrier layer.
[0014] Beneficial effects: This application provides a method for preparing a glass-intermediate through-hole electrode and the glass-intermediate through-hole electrode itself. The method includes: providing a glass substrate; forming at least one through-hole on the glass substrate, wherein the aspect ratio of the through-hole is greater than 10:1; forming a barrier layer within the through-hole at a first temperature based on a distal plasma chemical vapor deposition process, wherein the barrier layer at least covers the hole wall of the through-hole, and the first temperature is less than or equal to 300°C; forming an electrode material within the through-hole covered by the barrier layer, wherein the electrode material fills the interior of the through-hole, and the electrode material is physically isolated from the glass substrate by the barrier layer. This application generates active species through a distal plasma chemical vapor deposition process, which can form a barrier layer within the through-hole at low temperatures. The plasma-enhanced reaction ensures uniform coverage of the barrier layer on the inner sidewall of the through-hole with a high aspect ratio, effectively improving quality. Furthermore, the formed barrier layer is dense and continuous, which can effectively prevent the electrode material from diffusing into the glass substrate, improving the long-term reliability of the glass-intermediate through-hole electrode.
[0015] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application. Attached Figure Description
[0016] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0017] Figure 1 This is a flowchart of a method for preparing a glass interposer through-hole electrode according to an embodiment of this application; Figure 2 This is a schematic diagram of the structure of a glass substrate provided in a method for fabricating a glass interposer through-hole electrode according to an embodiment of this application; Figure 3 This is a schematic diagram of a method for preparing a glass interposer through-hole electrode according to an embodiment of this application, in which at least one through-hole is formed on the glass substrate; Figure 4 This is a schematic diagram of the barrier layer formed in a method for preparing a glass interposer through-hole electrode according to an embodiment of this application; Figure 5 This is a schematic diagram of the structure of the electrode material formed in a method for preparing a glass interlayer through-hole electrode according to an embodiment of this application.
[0018] Explanation of reference numerals in the attached figures: 1. Glass substrate; 2. Through hole; 3. Barrier layer; 4. Electrode material. Detailed Implementation
[0019] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0020] In the accompanying drawings, the size of constituent elements, the thickness of layers, or areas may sometimes be exaggerated for clarity. Therefore, any implementation of this disclosure is not necessarily limited to the dimensions shown in the drawings, and the shapes and sizes of the components in the drawings do not reflect true proportions. Furthermore, the drawings schematically illustrate ideal examples, and any implementation of this disclosure is not limited to the shapes or values shown in the drawings.
[0021] In the field of advanced packaging, glass interposers have become a potential alternative to silicon interposers due to their low cost, excellent electrical insulation, and adjustable coefficient of thermal expansion (CTE).
[0022] However, the via-hole electrode (TGV) process for glass interposers faces the following challenges: High aspect ratio structure: The through-hole electrode has a large aspect ratio, making it difficult to achieve uniform coverage using traditional deposition techniques (such as PVD).
[0023] Low temperature requirement: The softening point of glass is about 500℃. The actual process needs to reduce the temperature to avoid deformation or thermal stress.
[0024] Copper diffusion: Copper, as the filler metal for through-hole electrodes, easily diffuses into the glass substrate, requiring a high-quality barrier layer to ensure reliability.
[0025] In related technologies, barrier layers are typically formed using Thermal CVD, Thermal ALD, or PVD techniques. However, Thermal CVD requires a high-temperature environment (greater than 400°C), making it unsuitable for preparing barrier layers within vias in glass interposers. While Thermal ALD offers conformal characteristics, it suffers from slow deposition rates and high costs. Traditional PVD techniques, on the other hand, result in insufficient coverage of barrier layers formed in via structures with high aspect ratios.
[0026] In view of this, embodiments of this application propose a method for preparing a glass interposer through-hole electrode. Figure 1 A flowchart illustrating a method for fabricating a glass interposer through-hole electrode according to an embodiment of this application is shown, as follows: Figure 1 As shown, the method includes the following steps: S101, Provide a glass substrate.
[0027] Figure 2 This illustration shows a schematic diagram of the glass substrate structure provided in a method for fabricating a glass interposer through-hole electrode according to an embodiment of this application. Figure 2 As shown in the embodiments of this application, the glass substrate 1 (glass interlayer) includes: alkali-free glass or borosilicate glass, and the thickness of the glass substrate 1 is greater than or equal to 100 μm.
[0028] In some alternative embodiments, the adjustable coefficient of thermal expansion (CTE) of the glass substrate 1 is approximately 3.2 ppm / °C.
[0029] In some alternative embodiments, the thickness of the glass substrate 1 is greater than or equal to 200 μm and less than or equal to 500 μm.
[0030] S102. At least one through hole is formed on the glass substrate, wherein the aspect ratio of the through hole is greater than 10:1.
[0031] Figure 3 This illustration shows a schematic diagram of a method for fabricating a glass interposer through-hole electrode according to an embodiment of this application, in which at least one through-hole is formed on the glass substrate. Figure 3 As shown, at least one through-hole 2 is formed on the glass substrate 1 using laser drilling and wet etching processes, and the through-hole 2 penetrates the glass substrate 1. The aspect ratio of the through-hole 2 is greater than 10:1.
[0032] In some alternative embodiments, the aspect ratio of the through hole 2 is greater than 10:1 and less than 20:1.
[0033] In some optional embodiments, the diameter of the through hole 2 is greater than or equal to 5 μm and less than or equal to 20 μm; the depth of the through hole 2 is greater than or equal to 50 μm and less than or equal to 200 μm.
[0034] S103. Based on a remote plasma chemical vapor deposition process, a barrier layer is formed in the through-hole at a first temperature, the barrier layer at least covering the hole wall of the through-hole, and the first temperature is less than or equal to 300°C.
[0035] In the specific implementation step S103, Figure 4 This illustration shows a schematic diagram of the barrier layer formed in a method for fabricating a glass interposer through-hole electrode according to an embodiment of this application. Figure 4As shown, the barrier layer 3 is formed using remote plasma chemical vapor deposition (RP-CVD). Plasma is generated in a reaction chamber (remote plasma source) far from the glass substrate 1, and the precursor gas is ionized by radio frequency (RF) or microwave power to generate highly reactive free radicals and ions. By controlling the temperature of the reaction chamber to a first temperature, thermal deformation of the glass substrate 1 is ensured (the glass softening point is typically greater than 500°C). The barrier layer 3 is efficiently deposited at low temperatures by relying on plasma energy rather than high-temperature decomposition of the precursor.
[0036] In this embodiment, the barrier layer 3 at least covers the hole wall of the via 2, and the first temperature is less than or equal to 300°C. In this embodiment, the barrier layer 3 is formed using a distal plasma chemical vapor deposition process. Plasma is generated distally, and active free radicals are transported to the glass substrate 1 via gas flow, reacting with the precursor to deposit the barrier layer 3. This avoids damage to the via structure caused by direct plasma bombardment and is suitable for uniform coverage of vias 2 with high aspect ratios. Furthermore, the deposition rate of the barrier layer 3 formed using the distal plasma chemical vapor deposition process reaches tens of nanometers per minute.
[0037] In some alternative embodiments, the material of the barrier layer 3 includes at least one of the following: TiN or TaN.
[0038] In some alternative embodiments, the thickness of the barrier layer 3 is greater than or equal to 5 nm and less than or equal to 30 nm.
[0039] In some optional embodiments, the step coverage of the barrier layer 3 is greater than 90% to make the barrier layer 3 highly conformal and form a dense isolation layer. The barrier layer 3 effectively isolates the electrode material 4 from the glass substrate 1, ensuring reliability. The deposition rate of the barrier layer 3 is greater than or equal to 5 nm / min and less than or equal to 50 nm / min, effectively improving the economic efficiency of the fabrication.
[0040] In some alternative embodiments, the precursor of the barrier layer 3 includes at least one of the following: TiCl4, TaCl3, and NH3.
[0041] In some optional embodiments, the plasma power of the remote plasma chemical vapor deposition process is greater than or equal to 50W and less than or equal to 250W; the pressure of the remote plasma chemical vapor deposition process is greater than or equal to 0.1 Torr and less than or equal to 1 Torr.
[0042] S104. An electrode material is formed in the through hole covered by the barrier layer, the electrode material fills the interior of the through hole, and the electrode material is physically separated from the glass substrate by the barrier layer.
[0043] When implementing step S104, Figure 5 This illustration shows a schematic diagram of the electrode material structure formed in a method for fabricating a glass interposer through-hole electrode according to an embodiment of this application. Figure 5 As shown, based on the electroplating process, an electrode material 4 is formed in the through hole 2 covered by the barrier layer 3. The electrode material 4 fills the interior of the through hole 2, and the electrode material 4 is physically separated from the glass substrate 1 by the barrier layer 3.
[0044] In some alternative embodiments, after forming the electrode material 4, the method further includes annealing the glass substrate 1 at a second temperature to improve the adhesion between the barrier layer 3 and the electrode material 4, wherein the second temperature is less than 300°C.
[0045] In some alternative embodiments, the electrode material 4 is a conductive metal; alternatively, the electrode material 4 may be copper.
[0046] To enable those skilled in the art to better understand the solution of this application, the preparation method of the glass interposer through-hole electrode provided in this application will be described in detail below with reference to specific embodiments: In some optional embodiments, alkali-free glass is selected as the glass substrate 1; at least one through-hole 2 is formed on the glass substrate 1, the through-hole 2 having a diameter of 10 μm, a depth of 100 μm, and an aspect ratio of 10:1; the first temperature is set to 150℃-250℃, with 0.5 sccm of TiCl4 and 50 sccm of NH3 as precursors, the plasma power is set to 80W-200W, the pressure to 0.3 Torr-1.0 Torr, and the barrier layer 3 is deposited in the through-hole 2 using the far-end plasma chemical vapor deposition process for 10 minutes; metallic copper is deposited in the through-hole 2 by electroplating to form the electrode material 4, and the electrode material 4 is physically separated from the glass substrate 1 by the barrier layer 3.
[0047] In some optional embodiments, borosilicate glass is selected as the glass substrate 1; at least one through-hole 2 is formed on the glass substrate 1, the through-hole 2 having a diameter of 5 μm, a depth of 100 μm, and an aspect ratio of 20:1; the first temperature is set to 200℃-300℃, using 0.3 sccm of TaCl5 and 60 sccm of NH3 as precursors, the plasma power is set to 130W-250W, the pressure to 0.5 Torr-1.5 Torr, and the barrier layer 3 is deposited in the through-hole 2 using the far-end plasma chemical vapor deposition process for 15 minutes; metallic copper is deposited in the through-hole 2 by electroplating to form the electrode material 4, and the electrode material 4 is physically separated from the glass substrate 1 by the barrier layer 3.
[0048] This application provides a method for preparing a glass-intermediate through-hole electrode and the glass-intermediate through-hole electrode itself. The method includes: providing a glass substrate; forming at least one through-hole on the glass substrate, wherein the aspect ratio of the through-hole is greater than 10:1; forming a barrier layer within the through-hole at a first temperature based on a distal plasma chemical vapor deposition process, wherein the barrier layer at least covers the hole wall of the through-hole, and the first temperature is less than or equal to 300°C; forming an electrode material within the through-hole covered by the barrier layer, wherein the electrode material fills the interior of the through-hole, and the electrode material is physically isolated from the glass substrate by the barrier layer. This application generates active species through a distal plasma chemical vapor deposition process, which can form a barrier layer within the through-hole at low temperatures. The plasma-enhanced reaction ensures uniform coverage of the barrier layer on the inner sidewall of the through-hole with a high aspect ratio, effectively improving quality. Furthermore, the formed barrier layer is dense and continuous, which can effectively prevent the electrode material from diffusing into the glass substrate, improving the long-term reliability of the glass-intermediate through-hole electrode.
[0049] Based on the same inventive concept, this application discloses a glass interposer through-hole electrode. The glass interposer through-hole electrode is prepared by the preparation method of the glass interposer through-hole electrode described in this application. The glass interposer through-hole electrode includes: a glass substrate 1, on which at least one through-hole 2 is formed; a barrier layer 3, which is disposed inside the through-hole 2 and at least covers the hole wall of the through-hole 2; and an electrode material 4, which fills the inside of the through-hole 2 and is physically separated from the glass substrate 1 by the barrier layer 3.
[0050] It should be noted that the glass interposer through-hole electrode has the same technical effect as the preparation method of the glass interposer through-hole electrode described in the embodiments of this application.
[0051] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.
[0052] In the description of this specification, it should be understood that the terms "center", "thickness", "upper", "lower", "front", "rear", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.
[0053] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a communication connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.
[0054] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0055] The foregoing application provides many different implementations or examples for carrying out different structures of this application. To simplify this application, the components and arrangements of specific examples are described above. Of course, these are merely examples and are not intended to limit this application. Furthermore, reference numerals and / or reference letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various implementations and / or arrangements discussed.
[0056] The terms "an embodiment," "embodiment," or "one or more embodiments" as used herein mean that a particular feature, structure, or characteristic described in connection with an embodiment is included in at least one embodiment of this application. Furthermore, please note that the examples of the phrase "in one embodiment" do not necessarily all refer to the same embodiment.
[0057] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of this application may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.
[0058] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or terminal device that includes said element.
[0059] The preparation method of a glass interposer through-hole electrode and the glass interposer through-hole electrode provided in this application have been described in detail above. Specific examples have been used to illustrate the principle and implementation of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core idea of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation and application scope based on the idea of this application. Therefore, the content of this specification should not be construed as a limitation of this application.
Claims
1. A method for preparing a glass interposer through-hole electrode, characterized in that, The method comprises: providing a glass substrate; forming at least one via on the glass substrate, the via having an aspect ratio greater than 10:1; forming a barrier layer in the via at a first temperature based on a remote plasma chemical vapor deposition process, the barrier layer covering at least a hole wall of the via, the first temperature being less than or equal to 300℃; forming an electrode material in the via covered by the barrier layer, the electrode material filling an interior of the via, and the electrode material being physically separated from the glass substrate by the barrier layer.
2. The method of claim 1, wherein the glass interposer via electrode is formed by a method comprising: The barrier layer comprises at least one of TiN and TaN.
3. The method for preparing a glass interposer through-hole electrode according to claim 1, characterized in that, The barrier layer has a thickness greater than or equal to 5nm and less than or equal to 30nm.
4. The method for preparing a glass interposer through-hole electrode according to claim 1, characterized in that, The barrier layer has a step coverage greater than 90%, a deposition rate greater than or equal to 5nm / min and less than or equal to 50nm / min.
5. The method of claim 1, wherein the glass via-hole electrode is prepared by a method comprising: The barrier layer has a precursor comprising at least one of TiCl4 and TaCl3.
6. The method of claim 1, wherein The remote plasma chemical vapor deposition process has a plasma power greater than or equal to 50W and less than or equal to 250W. The remote plasma chemical vapor deposition process has a pressure greater than or equal to 0.1Torr and less than or equal to 1Torr.
7. The method for preparing a glass interposer through-hole electrode according to claim 1, characterized in that, The glass substrate comprises an alkali-free glass or a borosilicate glass.
8. The method of claim 1, wherein, The via has an aspect ratio greater than 10:1 and less than 20:
1.
9. The method of claim 1, wherein The via has a diameter greater than or equal to 5μm and less than or equal to 20μm, and a depth greater than or equal to 50μm and less than or equal to 200μm.
10. A glass interposer via electrode, characterized by, The glass interposer via electrode is prepared based on the method for preparing a glass interposer via electrode according to any one of claims 1 to 9, and comprises: a glass substrate having at least one via formed thereon; a barrier layer disposed in the via, the barrier layer covering at least a hole wall of the via; an electrode material filling an interior of the via, and the electrode material being physically separated from the glass substrate by the barrier layer.