Liquid processing apparatus and liquid processing method

Abstract

The invention provides a liquid processing apparatus and a liquid processing method. The present invention provides a liquid processing apparatus for forming a coating film by supplying a coating liquid to a substrate, wherein high productivity and space saving are achieved. The apparatus is provided with: first nozzles that eject a first processing liquid onto a substrate at first ejection positions on the substrate, the first nozzles being provided in units of substrate holding units; a second nozzle that discharges a second processing liquid for forming a coating film onto each substrate at a second discharge position on the substrate later than the discharge of the first processing liquid from the first nozzle, the second nozzle being shared by the plurality of substrate holding units; a third nozzle that is provided in units of each substrate holding unit so as to eject a third processing liquid toward the substrate at a third ejection position on the substrate held by each substrate holding unit; a swing mechanism that swings the first nozzle between the first standby part and the first discharge position in plan view; and a linear motion mechanism that linearly moves the third nozzle between the third standby part and the third discharge position in plan view.

Description

[0001] This application is a divisional application of an application with the application number 202010500958.2, the application date of June 4, 2020, and the invention name of “Liquid processing apparatus and liquid processing method”. TECHNICAL FIELD

[0002] The present disclosure relates to a coating apparatus and a coating method. BACKGROUND

[0003] A coating film is formed by supplying a processing liquid for forming a coating film such as a resist to a semiconductor wafer (hereinafter, referred to as a wafer) as a substrate using a coating apparatus in a manufacturing process of a semiconductor device. A liquid processing apparatus as a coating apparatus is described in Patent Literature 1, which includes two processing units that process wafers, a nozzle group that is composed of a plurality of nozzles, a temperature adjustment unit that stands by the nozzle group, and a nozzle moving mechanism. The nozzle moving mechanism described above transports one nozzle selected from the nozzle group between the processing units and the temperature adjustment unit. The nozzle moving mechanism, the nozzle group, and the temperature adjustment unit described above are shared by the two processing units.

[0004] PRIOR ART DOCUMENTS

[0005] PATENT LITERATURE

[0006] Patent Literature 1: Japanese Patent Application Publication No. 2010-34210 SUMMARY

[0007] PROBLEMS TO BE SOLVED BY THE INVENTION

[0008] The present disclosure provides a technique capable of achieving high productivity and saving space for a coating apparatus that forms a coating film by supplying a coating liquid to a substrate.

[0009] SOLUTION TO PROBLEM

[0010] The liquid processing apparatus of the present disclosure includes:

[0011] a plurality of substrate holding portions that respectively hold substrates;

[0012] a first nozzle that is provided in units of the substrate holding portions in order to eject a first processing liquid to a substrate held above a first ejection position of the substrate in each of the substrate holding portions;

[0013] a second nozzle that is independently moved with respect to the first nozzle, ejects a second processing liquid for forming a coating film to a substrate held above a second ejection position of the substrate in each of the substrate holding portions in a manner later than the ejection of the first processing liquid, and is shared by the plurality of substrate holding portions;

[0014] a third nozzle which moves independently of the first nozzle and the second nozzle, and which is provided so as to spray a third processing liquid toward a substrate held by each of the substrate holding portions at a third spray position above the substrate when the first processing liquid and the second processing liquid are not supplied to the substrate;

[0015] a first standby portion, a second standby portion, and a third standby portion which allow the first nozzle, the second nozzle, and the third nozzle to stand by outside a holding area in which the substrate is held by each of the substrate holding portions when viewed in plan;

[0016] a rotation mechanism which allows the first nozzle to rotate between the first standby portion and the first spray position when viewed in plan; and

[0017] a linear motion mechanism which allows the third nozzle to move linearly between the third standby portion and the third spray position when viewed in plan.

[0018] In the liquid processing apparatus described above, the first nozzle can supply a diluent as the first processing liquid to the substrate, and the second nozzle can supply a processing liquid which forms a film on the substrate as the second processing liquid.

[0019] In the liquid processing apparatus described above, the third nozzle can supply the third processing liquid to a peripheral portion of the substrate.

[0020] In the liquid processing apparatus described above, the first movement trajectory of the first nozzle when viewed in plan between the first standby portion and the first spray position, the second movement trajectory of the second nozzle when viewed in plan between the second standby portion and the second spray position, and the third movement trajectory of the third nozzle when viewed in plan between the third standby portion and the third spray position can not overlap each other except for a case in which the first spray position and the second spray position are set as a common spray position which overlaps each other when viewed in plan.

[0021] In the liquid processing apparatus described above, the liquid processing apparatus can include an illumination which moves together with the second nozzle and irradiates the second nozzle with light, and a photographing portion which moves together with the second nozzle and photographs the second nozzle to which light is irradiated by the illumination.

[0022] In the liquid processing apparatus described above, the illumination can be provided with a plurality of illuminations which irradiate the second nozzle with light from different directions.

[0023] In the liquid processing apparatus described above, a period during which the first processing liquid is sprayed from the first nozzle toward the substrate can be longer than a period during which the second processing liquid is sprayed from the second nozzle toward the substrate.

[0024] For the liquid processing apparatus described above, the substrate held by one of the substrate holding sections can be a first substrate, the substrate held by the other of the substrate holding sections can be a second substrate, and a time period from when the first nozzle starts moving from the first standby position to when the second nozzle finishes ejecting the second processing liquid can be a continuous process. The liquid processing apparatus can include a control section that outputs a control signal to overlap a time period during which the first substrate is subjected to the continuous process with a time period during which the second substrate is subjected to the continuous process.

[0025] For the liquid processing apparatus described above, the control section can determine a time at which the continuous process on the second substrate is started based on a time at which the continuous process on the first substrate is finished during execution of the continuous process on the first substrate.

[0026] For the liquid processing apparatus described above, the control section can adjust an interval from when the ejection of the first processing liquid is finished to when the second processing liquid is ejected on the second substrate to be within a range set in advance.

[0027] For the liquid processing apparatus described above, the second nozzle can be in standby above the substrate during the ejection of the first processing liquid from the first nozzle to the substrate.

[0028] For the liquid processing apparatus described above, the second nozzle can be in standby at a position that is offset in a horizontal direction with respect to the second ejection position overlapping the first ejection position during the ejection of the first processing liquid from the first nozzle to the substrate.

[0029] For the liquid processing apparatus described above, the imaging section and the plurality of illuminations can be movable in common with a drive section of the second nozzle, and the plurality of illuminations can respectively illuminate the second nozzle from two regions separated by a straight line connecting the second nozzle and the imaging section when viewed from above.

[0030] For the liquid processing apparatus described above, the plurality of illuminations can include an upper illumination member that illuminates the second nozzle from above the second nozzle.

[0031] For the liquid processing apparatus described above, the liquid processing apparatus can be provided with a decision mechanism that decides, for the second nozzle, whether to move the second nozzle to the second standby position after ejecting the second processing liquid toward the first substrate or to move the second nozzle toward the second ejection position corresponding to the second substrate without moving the second nozzle to the second standby position, based on whether there is a predetermined transport of the second substrate to another substrate holding portion during execution of the continuous processing of the first substrate.

[0032] For the liquid processing apparatus described above, the liquid processing apparatus can be provided with a decision mechanism that decides, for the second nozzle, whether to move the second nozzle to the second standby position after ejecting the second processing liquid toward the first substrate or to move the second nozzle toward the second ejection position corresponding to the second substrate without moving the second nozzle to the second standby position, based on an interval between a time of start of the continuous processing of the first substrate held first in one substrate holding portion and a time of start of the continuous processing of the second substrate held later in another substrate holding portion.

[0033] The liquid processing method of the present disclosure includes: a process of holding substrates in a plurality of substrate holding portions, respectively; a process of disposing first nozzles provided in units of the substrate holding portions above the substrates held by the substrate holding portions to eject first processing liquid toward the substrates; a process of independently moving second nozzles common to the plurality of substrate holding portions with respect to the first nozzles and disposing the second nozzles above the substrates held by the substrate holding portions at second ejection positions; a process of ejecting second processing liquid for forming a coating film from the second nozzles at the second ejection positions to the substrates later than the first processing liquid is ejected from the first nozzles to the substrates; and a process of moving the first nozzles to rotate between first standby positions and the first ejection positions in a plan view.

[0034] For the liquid processing method described above, the substrate held in one of the substrate holding portions can be set as a first substrate, the substrate held in another of the substrate holding portions can be set as a second substrate, and a time from when the first nozzles start moving from the first standby positions to a time when the second nozzles finish ejecting the second processing liquid can be set as a continuous processing. The period during which the first substrate is subjected to the continuous processing and the period during which the second substrate is subjected to the continuous processing can overlap.

[0035] For the liquid processing method described above, the liquid processing method can also include the following process: during execution of the continuous processing on the first substrate, the timing at which to start the continuous processing on the second substrate is determined based on the timing at which the continuous processing ends.

[0036] The liquid processing apparatus of the present disclosure includes: a plurality of substrate holding portions that each hold a substrate; a first nozzle that is provided in units of the substrate holding portions in order to spray a first processing liquid toward a substrate held above a first spray position of each of the substrate holding portions; a second nozzle that is independently moved with respect to the first nozzle, sprays a second processing liquid that is different from the first processing liquid toward a substrate held above a second spray position of each of the substrate holding portions in a manner that is later than the spraying of the first processing liquid, and is shared by the plurality of substrate holding portions; a first standby portion and a second standby portion that cause the first nozzle and the second nozzle to each stand by outside of a holding area in which a substrate is held by each of the substrate holding portions when viewed from above; a rotation mechanism that causes the first nozzle to rotate between the first standby portion and the first spray position when viewed from above; and a control portion that sets a substrate held by one of the substrate holding portions as a first substrate, sets a substrate held by another of the substrate holding portions as a second substrate, and sets a timing at which the first nozzle moves from the first standby portion to a timing at which the second nozzle ends the spraying of the second processing liquid as a continuous processing, the control portion determining a timing at which to start the continuous processing on the second substrate during execution of the continuous processing on the first substrate based on a timing at which the continuous processing ends.

[0037] The liquid processing method of the present disclosure includes: a step of holding substrates in a plurality of substrate holding portions; a step of disposing a first nozzle provided in units of the substrate holding portions above a substrate held by each of the substrate holding portions to spray a first processing liquid to each substrate; a step of independently moving a second nozzle, which is common to the plurality of substrate holding portions, with respect to the first nozzle and disposing the second nozzle at a second spray position above the substrate held by each of the substrate holding portions; a step of spraying a second processing liquid, which is different from the first processing liquid, from the second nozzle at the second spray position to the substrate later than the spraying of the first processing liquid from the first nozzle to the substrate; and a step of moving each of the first nozzles in a manner of pivoting between a first standby portion and the first spray position in a plan view, the first standby portion being a standby area for each of the first nozzles outside a holding area in which the substrate is held by each of the substrate holding portions in the plan view, the substrate held by one of the substrate holding portions being a first substrate, the substrate held by another of the substrate holding portions being a second substrate, a time from a start of the movement of the first nozzle from the first standby portion to a time at which the second nozzle ends the spraying of the second processing liquid being a continuous process, a time at which the continuous process is started on the second substrate being determined based on a time at which the continuous process on the first substrate ends.

[0038] Effects of the Invention

[0039] According to the present disclosure, a coating device for forming a coating film by supplying a coating liquid to a substrate can achieve high productivity and save space. BRIEF DESCRIPTION OF DRAWINGS

[0040] Figure 1 is a schematic view of a substrate processing device including a resist coating module as an embodiment of the present disclosure.

[0041] Figure 2 is a plan view of the resist coating module.

[0042] Figure 3 is a perspective view of the resist coating module.

[0043] Figure 4 is a longitudinal sectional side view of a cup provided in the resist coating module.

[0044] Figure 5A is a perspective view of a general-purpose arm constituting the resist coating module.

[0045] Figure 5B is a plan view showing positional relationships of constituent members provided in the general-purpose arm.

[0046] Figure 6is a side view of a resist nozzle held to the universal arm.

[0047] Figure 7 is an explanatory diagram showing the operation of a nozzle provided to a resist coating module.

[0048] Figure 8 is an explanatory diagram showing the operation of a nozzle provided to a resist coating module.

[0049] Figure 9 is an explanatory diagram showing the operation of a nozzle provided to a resist coating module.

[0050] Figure 10 is a plan view showing the trajectories of each nozzle provided to the resist coating module.

[0051] Figure 11 is a graph showing the operation of a resist coating module.

[0052] Figure 12 is a graph showing the operation of a resist coating module.

[0053] Figure 13 is an action diagram showing the operation of a resist coating module.

[0054] Figure 14 is an action diagram showing the operation of a resist coating module.

[0055] Figure 15 is an action diagram showing the operation of a resist coating module.

[0056] Figure 16 is an action diagram showing the operation of a resist coating module.

[0057] Figure 17 is an action diagram showing the operation of a resist coating module.

[0058] Figure 18 is an action diagram showing the operation of a resist coating module.

[0059] Figure 19 is an action diagram showing the operation of a resist coating module.

[0060] Figure 20 is an action diagram showing the operation of a resist coating module.

[0061] Figure 21 is an action diagram showing the operation of a resist coating module.

[0062] Figure 22 is an action diagram showing the operation of a resist coating module.

[0063] Figure 23is a view showing another processing example of the resist coating module. DETAILED DESCRIPTION

[0064] In Figure 1 A substrate processing apparatus 1 including a resist coating module 2 as an embodiment of the coating apparatus (as a liquid processing apparatus) of the present disclosure is shown in FIG. 1. The substrate processing apparatus 1 is supplied with a carrier 11 for housing a plurality of wafers W. In addition, the substrate processing apparatus 1 is provided with a temperature adjustment module 12 and a transport mechanism 13 that transports the wafers W in the order of the carrier 11, the temperature adjustment module 12, the resist coating module 2, and the carrier 11. The temperature adjustment module 12 adjusts the wafers W to a predetermined temperature so that the wafers W are properly processed in the resist coating module 2. Also, if the temperature adjustment of the wafers W is completed and the wafers W can be sent out, a predetermined signal (set as a sending-out signal) is output to a control section 100 to be discussed later.

[0065] Next, the resist coating module 2 as the coating apparatus will be described with reference to a plan view of Figure 2 and a plan view of Figure 1 The resist coating module 2 performs the ejection of a diluent as a first processing liquid to the wafer W and the ejection of a resist as a second processing liquid later than the ejection of the diluent, and forms a resist film as a coating film on the wafer W. The ejection of the diluent described above is used to perform a cleaning process for removing foreign matter on the surface of the wafer W, and also serves as a pre-wetting for improving the wettability of the surface of the wafer W with respect to the resist. As for the ejection of the resist described above, one of a plurality of nozzles that eject different kinds of resists, respectively, is selected, and a resist film corresponding to the lot of the wafer W can be formed. In addition, as for the resist coating module 2, after the resist film is formed, a diluent as a third processing liquid is ejected to the peripheral portion of the wafer W, and an EBR (Edge Bead Removal) that removes unnecessary portions of the resist film in a ring shape is performed.

[0066] The resist coating module 2 is provided with a horizontally long square-shaped housing 21, and in the housing 21, processing sections 22A, 22B, 22C for processing the wafers W, respectively, are arranged in the horizontal direction in this order. The processing sections 22 (22A to 22C) are provided with members for placing the wafers W and performing the cleaning process and the EBR described above. In addition, a resist supply mechanism 6 that is shared by the three processing sections 22 is provided in the housing 21. If the cleaning of the wafer W, the formation of the resist film by the coating of the resist after the cleaning, and the EBR after the formation of the resist film are set as a series of processes, the series of processes can be performed in each processing section 22.

[0067] In the figure, reference numeral 23 indicates a delivery port for transferring wafer W to processing units 22A, 22B, and 22C, respectively. These ports are located on the front side wall of the housing 21 at positions corresponding to processing units 22A, 22B, and 22C. Each delivery port 23 opens and closes independently using a gate 24. Hereinafter, the arrangement direction of the processing units 22 will be described as left-right; unless otherwise specified, right and left sides will be referred to as the right and left sides when viewed from the rear towards the front, respectively. Processing unit 22A is located on the left side, and processing unit 22C is located on the right side.

[0068] Also refer to the perspective view inside the casing 21 Figure 3 The following explanation will be provided. Processing units 22A to 22C are identically configured. (The following will also refer to...) Figure 4 The processing unit 22A is described in a longitudinal sectional side view. The processing unit 22A includes a cup 31A with an opening at the top and a holding area therein that houses the wafer W. Figure 4 In the attached diagram, reference numeral 32 indicates the drain outlet located on cup 31A. Figure 4 Reference numeral 33 in the accompanying drawing is an exhaust port for venting air from the cup 31A during wafer W processing. A rotary chuck 34A, serving as a substrate holding part, is provided inside the cup 31A, adsorbing the central portion of the back side of the wafer W and holding it horizontally. The lower side of the rotary chuck 34A is connected to a rotary drive unit 35. Using the rotary drive unit 35, the rotary chuck 34A and the held wafer W rotate together about a vertical axis. Three pins (in...) are provided inside the cup 31A, raised and lowered by a lifting mechanism 36. Figure 4 (Only two are indicated in the text) 37, used for transferring wafer W between the transport mechanism 13 and the rotary chuck 34A.

[0069] The processing section 22A is provided with a peripheral processing mechanism 4A for performing EBR and a processing mechanism 5A for performing cleaning processing. The peripheral processing mechanism 4A will be described below. The peripheral processing mechanism 4A is provided with a direct drive mechanism 41, a lifting mechanism 42, an arm 43, a nozzle (hereinafter, referred to as a peripheral nozzle) 44A, and a cup-shaped standby section 45A. The direct drive mechanism 41 is provided extending left and right in a right region at a rear side of the cup 31A. The lifting mechanism 42 is connected to the direct drive mechanism 41 and is configured to be able to move linearly horizontally left and right by the direct drive mechanism 41. The base end portion of the arm 43 is connected to the lifting mechanism 42, and the top end side of the arm 43 extends toward the front. The arm 43 is vertically lifted by the lifting mechanism 42. Further, the peripheral nozzle 44A as a third nozzle is provided on the lower side of the top end portion of the arm 43 in such a manner as to spray a diluent toward a direction inclined with respect to the horizontal plane and the rear side in plan view. The spraying of the diluent is performed after cleaning and formation of the resist film, that is, when the processing liquid is not sprayed from the separate nozzle 55 and the resist nozzle 71 to be described later. The peripheral nozzle 44A is connected via a pipe to a not-shown diluent supply mechanism that supplies the diluent to the peripheral nozzle 44A.

[0070] The right region in the central portion with respect to the front-rear direction of the cup 31A is provided with the above-described standby section 45A as a third standby section. The peripheral nozzle 44A moves between a standby position in the standby section 45A and a diluent spraying position (third spraying position) located inside the cup 31A and above the peripheral portion of the wafer W at a predetermined height from the wafer W by cooperation of the direct drive mechanism 41 and the lifting mechanism 42. The peripheral nozzle 44A stands by in the above-described standby position when not in use.

[0071] Next, the processing mechanism 5A will be described. The processing mechanism 5A is provided with a lifting mechanism 51, a rotating mechanism 52, an arm 53, a nozzle (hereinafter, referred to as a separate nozzle) 54A, and a cup-shaped standby section 55A. The lifting mechanism 51 and the rotating mechanism 52 are provided on the left side of the central portion in the front-rear direction of the cup 31A. The rotating mechanism 52 is connected to the lifting mechanism 51 and is vertically lifted by the lifting mechanism 51. The base end portion of the arm 53 is connected to the rotating mechanism 52, and the top end side of the arm 53 extends in the lateral direction. The arm 53 is rotated about a vertical rotating shaft 50 (see FIG. 6) provided at the base portion side of the arm 53 by the rotating mechanism 52. That is, the top end side of the arm 53 is revolved about the rotating shaft 50, and the rotating mechanism 52 constitutes a revolving mechanism. The separate nozzle 54A as a second nozzle is provided on the lower side of the top end portion of the arm 53 in such a manner as to spray a diluent downward vertically. The downstream end of a pipe 56 is connected to the separate nozzle 54A, and the upstream end of the pipe 56 is connected to a diluent supply mechanism 57 that supplies the diluent to the separate nozzle 54A. Figure 2 The separate nozzle 54A is provided on the lower side of the top end portion of the arm 53 in such a manner as to spray a diluent downward vertically. The downstream end of a pipe 56 is connected to the separate nozzle 54A, and the upstream end of the pipe 56 is connected to a diluent supply mechanism 57 that supplies the diluent to the separate nozzle 54A.

[0072] A housing 58 is provided at the top of arm 53, surrounding the downstream side of pipe 56. Temperature-adjusted water is supplied to the space inside the housing 58 and outside the pipe 56. One end of a supply pipe 47 and one end of a discharge pipe 48 are respectively connected to the housing 58 (see reference). Figure 4 The other end of the supply pipe 47 and the other end of the discharge pipe 48 are connected to the circulation flow forming mechanism 49. The circulation flow forming mechanism 49 adjusts the temperature of the water supplied from the discharge pipe 48 and supplies it to the aforementioned space within the housing 58 via the supply pipe 47. In other words, the circulation flow forming mechanism 49 constitutes a chiller, adjusting the temperature of the diluent passing through the piping 56 using the aforementioned temperature-adjusted water supply. That is, it adjusts the temperature of the diluent sprayed from the individual nozzle 54A.

[0073] A standby section 55A, serving as a first standby section, is provided on the left side of the cup 31A and in a region slightly forward of the center portion of the cup 31A in the front-rear direction. Using the cooperation of a lifting mechanism 51 and a rotating mechanism 52, an individual nozzle 54A moves between a standby position and a dispensing position (second dispensing position) within the standby section 55A. This dispensing position (second dispensing position) is located within the cup 31A and above the center portion of the wafer W, at a predetermined height from the wafer W. Furthermore, when not in use, the individual nozzle 54A remains in standby position within the aforementioned standby section 55A.

[0074] Processing units 22B and 22C are configured in the same manner as processing unit 22A, as described above. Among the components of these processing units 22B and 22C, those components identical to those in processing unit 22A are indicated by reference numerals with the same numbers used in processing unit 22A. However, the English letters following the numbers are represented differently between the processing units. The reference numeral for processing unit 22B is denoted by B, and the reference numeral for processing unit 22C is denoted by C. Furthermore, in the following description, the rear region located within the housing 21 and behind the cups 31A to 31C is designated as reference numeral 38.

[0075] Next, the resist supply mechanism 6 will be described. The resist supply mechanism 6 includes: a standby section 61, 10 resist nozzles 71, and a nozzle delivery mechanism 63. The standby section 61, serving as the second standby section, is located at the rear of the cup 31B. This standby section 61 extends longitudinally in the rear region 38 and is configured as a platform extending to the right rear when viewed from above. Furthermore, 10 recesses (see reference) are provided at intervals along the length of the platform on the upper part of the standby section 61. Figure 4Each recess is configured as a standby position 62 for receiving the resist nozzle 71 and keeping the resist nozzle 71 in standby mode. By supplying diluent to the standby position 62, the resist inside the resist nozzle 71 in standby mode is prevented from drying out.

[0076] The reason why a standby section 61 is provided behind cup 31B in the central part of cups 31A-31C as described above is to prevent a significant difference in the distance between the processing sections 22 and the standby section 61 when the resist nozzle 71 is delivered from the standby section 61 to the wafer W. More specifically, by suppressing this difference in distance, the tension applied to the piping 74 connected to the resist nozzle 71 (discussed later) is suppressed from varying during processing in each processing section 22. This suppresses fluctuations in the state of the liquid flow ejected between processing sections 22.

[0077] Each resist nozzle 71, which serves as a second nozzle shared by all processing units 22, sprays resist downwards. To allow for in-nozzle imaging as discussed later, the resist nozzle 71 is configured to be transparent to visible light. Furthermore, a block-shaped holding portion 72, held by the nozzle delivery mechanism 63 (discussed later), is provided on each resist nozzle 71. Moreover, a flexible conduit 74 is connected to one end of each resist nozzle 71 from the left. The upstream side of each conduit 74 bends downwards towards the right, and the portion extending to the right is fixed to the worktable. Figure 3 Reference numeral 75 in the accompanying drawings indicates a fixing part used for this fixing. A resist supply mechanism (not shown) is connected upstream of each pipe 74. Each resist supply mechanism is provided on a per-pipe 74 basis, and each resist supply mechanism supplies a different type of resist to the resist nozzle 71 via the pipe 74.

[0078] Next, the nozzle delivery mechanism 63, which serves as the drive unit for the second nozzle, will be described. The nozzle delivery mechanism 63 includes: a linear motion mechanism 64, a lifting mechanism 65, a lifting section 66, and an arm (hereinafter referred to as a universal arm) 67 extending in the horizontal direction. The linear motion mechanism 64 is provided to extend in the left-right direction from the rear side of the standby section 61. The lifting mechanism 65 is provided on the linear motion mechanism 64, and the lifting mechanism 65 is configured to move freely in the left-right direction using the linear motion mechanism 64. The lifting mechanism 65 is connected to the base end of the lifting section 66, which extends in the front-rear direction, and the base end of the universal arm 67 is provided on the top end of the lifting section 66. A vertical rotation axis 68 (see reference 67) is provided at the base end of the universal arm 67. Figure 2 The universal arm 67 rotates about the rotation axis 68 using a rotating mechanism (not shown). That is, the top end of the universal arm 67 rotates about the rotation axis 68.

[0079] A disassembly / removal mechanism 60 for disassembling and reassembling the resist nozzle 71 in the holding portion 72 is provided at the lower end of the universal arm 67. This disassembly / removal mechanism 60 can freely change the holding of the resist nozzle 71 in the standby portion 61. For example, a recess is formed in the upper part of the holding portion 72, and the disassembly / removal mechanism is configured to enter the recess. Furthermore, for example, a small protrusion that can freely protrude and sink into the side of the protrusion is provided on the side of the protrusion. By using the sinking of the protrusion, the state of engagement with the side of the recess and the state of disengagement are switched, thereby performing the disassembly / removal described above.

[0080] Using the cooperation of the linear motion mechanism 64, the lifting mechanism 65, and the universal arm 67, each resist nozzle 71 can move between the standby position and the ejection position (second ejection position) at the standby section 61. This ejection position (second ejection position) is located within the cup 31 (31A~31C) and above the center of each wafer W, at a predetermined height from the surface of the wafer W. When conveying the resist nozzle 71 onto the wafer W, with the lifting mechanism 65 stopped at a position corresponding to the processing sections 22A~22C respectively, the universal arm 67 rotates counterclockwise from its top end extending to the right relative to its base end, thereby conveying the resist nozzle 71. Furthermore, when conveying the resist nozzle 71 between the standby section 61 and the processing section 22, and between each processing section 22, as the lifting mechanism 65 moves left and right using the linear motion mechanism 64, the top end of the universal arm 67 faces to the right, thus facing the rear region 38. In other words, the general-purpose arm 67 moves in a manner that does not obstruct the processing of each processing unit 22.

[0081] For the aforementioned general-purpose arm 67, also refer to the perspective view as the top side. Figure 5A As a rough top view Figure 5B The following description will be provided. Support portions 81, extending to the left and right respectively when viewed in the extending direction of the universal arm 67, are provided at the base of the universal arm 67. However, these left and right extensions may not necessarily correspond to the left and right extensions along the length of the housing 21 described previously. At the top of each support portion 81 is a first illumination 82, which is an LED (Light Emitting Diode). Each first illumination 82 has a plane that emits light over a wide area, capable of irradiating light from this plane toward the resist nozzle 71 held on the universal arm 67. The first illumination 82 are arranged separately from each other, thus irradiating light toward the resist nozzle 71 from different directions. In more detail, light is irradiated toward the resist nozzle 71 from two areas separated by the straight line L0 connecting the camera 84 (discussed later) and the resist nozzle 71 when viewed from above (in... Figure 5B(Indicated by dashed arrows). Specifically, the straight line connecting the camera 84 and the resist nozzle 71 refers to, for example, the optical axis of the camera 84, which includes not only the straight line between the camera 84 and the resist nozzle 71 but also its extension. Furthermore, the reason for illuminating light from such different directions is that, in order to determine the extent of liquid present within the resist nozzle 71 in the image acquired by the camera 84 (discussed later), the inner walls of the left and right sides of the resist nozzle 71 are equally identified. That is, when liquid is present within the resist nozzle 71, a contrast of light and dark is generated between the portion of the inner wall of the resist nozzle 71 that is in contact with the liquid and the portion that is not in contact with the liquid, allowing for differentiation between the two. Therefore, even if the upper and lower surfaces of the liquid cannot be clearly determined in the image, the extent of liquid presence can be determined from the extent of the inner wall in contact with the liquid using the aforementioned contrast. Furthermore, by equally identifying the inner walls on both the left and right sides of the liquid, a more reliable determination of the extent of liquid presence can be achieved.

[0082] Additionally, a support portion 83 is provided at the top end of the universal arm 67, and a camera 84 and a second illumination 85, which serves as an LED, are mounted on this support portion 83. The optical axis of the camera 84 is oriented obliquely downwards so as to include the resist nozzle 71 and the area below the resist nozzle 71 in the field of view. The second illumination 85 illuminates the base end of the universal arm 67 obliquely downwards. This light forms a relatively small illumination point at the upper end of the resist nozzle 71. Figure 6 The arrows indicate the light path of the light supplied from the second illumination 85 to the resist nozzle 71 within the resist nozzle 71. As shown in the figure, the light reflects downwards between the outer peripheral surface of the flow path 70 of the resist nozzle 71 and the outer peripheral surface of the resist nozzle 71. Thus, by allowing light to pass through the resist nozzle 71, a clear image of the interior of the resist nozzle 71 is obtained. Furthermore, by providing a common arm 67, which is independent of the mechanism provided for each of the processing units 22A-22C and shared by each of the processing units 22A-22C, as described above, the number of illumination devices, cameras, etc., used can be reduced, and the space required for their installation can be decreased (space saving).

[0083] For example, from the moment the resist is ejected slightly before the ejection of the resist from the nozzle 71 until the ejection of the resist ends, a camera 84, which serves as the imaging unit, takes an image. During this imaging, an image of the resist nozzle 71 can be obtained by simultaneously illuminating it with, for example, first illumination 82 and second illumination 85, or by staggering the timing of illumination with first illumination 82 and second illumination 85 to obtain images at different times. The image data obtained by the camera 84 is sent to the control unit 100, which will be discussed later. The control unit 100 detects from the acquired images whether there is dirt adhering to the resist nozzle 71, resist dripping from the nozzle 71, the position of the liquid surface inside the nozzle, whether there is any interruption in the resist flow due to bubbling, etc., and can determine whether there is any abnormality based on the detection results. First illumination 82 and second illumination 85 constitute an illumination unit, and second illumination 85 is configured as an upward illumination member. In addition to the first illumination 82, there is a second illumination that shines light from above, which can suppress the image from being difficult to see due to the mist and splatter of the sprayed liquid, while allowing the upper and lower surfaces of the liquid inside the resist nozzle 71 to be seen in the image. Furthermore, the lower surface of the liquid, if it is only a small height to the point of remaining inside the nozzle, can also be identified using the illumination from above.

[0084] The resist ejection positions of the resist nozzle 71 and the diluent ejection positions of the individual nozzles 54 (54A~54C) are located at the center of the wafer W, and are set as overlapping common ejection positions. To explain the operation of these nozzles, in order to quickly supply resist R to the wafer W after cleaning and shorten the processing time, during the process of the individual nozzles 54 ejecting diluent B1 to the wafer W, the resist nozzle 71 is in a transitional standby position (straight-forward standby position) that is slightly offset horizontally from the resist R ejection position. Figure 7 Then, if the individual nozzle 54 stops spraying diluent B1 and moves horizontally away from the spraying position of diluent B1, it will retreat. Figure 8 To reliably avoid interference between the nozzles, the resist nozzle 71 moves horizontally slightly later than the moving point and stops at the resist R ejection position. That is, without performing the lifting mechanism 65, the resist nozzle 71 moves from the transition standby position to the ejection position solely by the rotation of the universal arm 67, and the ejection of the resist R begins. Figure 9 ).

[0085] Furthermore, the movement trajectories of the individual nozzle 54A, the resist nozzle 71, and the peripheral nozzle 44A during the processing of wafer W in the processing unit 22A are respectively set as D1, D2, and D3. Figure 10For ease of illustration, the movement trajectories of each nozzle's outlet are represented by straight lines or curves. Since the ejection position of the resist nozzle 71 overlaps with the ejection position of the individual nozzle 54A as described previously, movement trajectories D1 and D2 overlap above the center of the wafer W. However, movement trajectories D1, D2, and D3 do not overlap except for the overlap of movement trajectories above the center of the wafer W. Furthermore, by setting movement trajectories D1 and D2 in this way, the transition standby position of the resist nozzle 71, as described above, is a position that does not overlap with the movement trajectory D1 of the individual nozzle 54A.

[0086] The greater the overlap of movement trajectories D1 to D3, the more detailed the setting of the sequence and timing of each nozzle's movement becomes to prevent interference between nozzles. In other words, the movement control of each nozzle becomes complex. However, as described above, movement trajectories D1 to D3 do not overlap except for the overlap of D1 and D2 at the center of wafer W. This suppresses the overlap of movement trajectories D1 to D3, thus preventing the aforementioned complexity in nozzle movement control. The movement trajectories of each nozzle during wafer W processing in processing unit 22A are representatively shown, but the same movement trajectories are drawn for each nozzle during wafer W processing in other processing units 22. That is, for processing units 22B and 22C, the movement trajectories of each nozzle do not overlap when viewed from above, except at the center of wafer W. Furthermore, the diluent ejection position of the peripheral nozzles 44 of each processing unit 22 can be located above wafer W. The phrase "above wafer W" refers to being located above wafer W, and is not limited to the situation where it overlaps with wafer W when viewed from above, as shown in the figures.

[0087] However, as described above, the diluent ejection position of the individual nozzles 54 (54A~54C) is located above the center of the wafer W. Therefore, the top-view distance between the standby portion 55 (55A~55C) of the individual nozzles 54 (54A~54C) located on the outside of the cup 31 (31A~31C) and the ejection position is relatively long. Therefore, if we assume a structure where a linear mechanism that moves the peripheral nozzles 44 (44A~44C) is used instead of the rotating mechanism 52 to move the standby portion 55 of the individual nozzles 54 between the standby position and the ejection position via the arm 53, the length of this linear mechanism is relatively large. In other words, a large lateral space is required to install this linear mechanism on one side of the cup 31. Furthermore, in the case of a structure where the individual nozzles 54 are moved using a linear mechanism, it is conceivable to place the linear mechanism above the cup 31 without requiring this space. However, if such a structure is adopted, particles generated by the linear mechanism may fall onto the wafer W and adhere to it; therefore, such a configuration is not desirable. Therefore, in order to prevent the resist coating module 2 from becoming too large, the method of moving the individual nozzles 54 laterally by the rotating mechanism 52 as described above is effective.

[0088] On the other hand, the ejection position of the peripheral nozzle 44 is located above the periphery of the wafer W. Therefore, the distance between the standby portion 45 (45A~45C) of the peripheral nozzle 44, located on the outside of the cup 31, and the ejection position when viewed from above is relatively short. Thus, even with the structure that moves using the linear motion mechanism 41 as described above, the length of the linear motion mechanism 41 is relatively small. Furthermore, in the EBR performed using the peripheral nozzle 44, the resist film on the periphery of the wafer W is removed in a ring shape, but the setting of the removal width of the resist film is changed. As described above, the peripheral nozzle 44 is set in an inclined state on the arm 43, but even when the removal width setting is changed by moving horizontally in a straight line using the linear motion mechanism 41, the ejection direction of the diluent relative to the rotation direction of the wafer W will not change.

[0089] However, if we assume that the movement of the peripheral nozzle 44 by the arm 43 is performed using a rotary mechanism that moves the individual nozzle 44 instead of the linear mechanism 41, then the ejection direction of the diluent relative to the rotation direction of the wafer W changes due to the change in the removal width setting. That is, in addition to the diluent contact point changing radially on the wafer W, the centrifugal force at that contact point changes significantly due to this change in ejection direction, potentially increasing liquid splashing from the contact point. Therefore, it is conceivable that the tilt of the peripheral nozzle 44 needs to be adjusted each time the removal width setting is changed. Therefore, from the viewpoint of minimizing the labor and time required for such adjustments, it is preferable to use the aforementioned linear mechanism 41 to move the peripheral nozzle 44.

[0090] However, since the arm 53 supporting the individual nozzle 54 rotates using the rotating mechanism 52, the area required for the movement of this arm 53 (the rotation area of ​​the arm 53) is relatively large. Furthermore, assuming that the standby portion 55 of the individual nozzle 54 and the rotating mechanism 52 are arranged on the right side relative to the cup 31 in the same manner as the standby portion 45 of the peripheral nozzle 44, the area required for the movement of the arm 53, as described above, is relatively large. Therefore, it is necessary to ensure sufficient space to avoid interference with the peripheral nozzle 44 and the arm 43 supporting the peripheral nozzle 44, which could potentially lead to a larger module size.

[0091] Furthermore, assuming the standby section 55 of the individual nozzle 54 is positioned rearward relative to the cup 31 along with the rotation mechanism 52, sufficient space must be ensured to avoid interference with the resist nozzle 71 and the general-purpose arm 67 supporting the resist nozzle 71. Therefore, the module could still be enlarged. Moreover, assuming the standby section 55 of the individual nozzle 54 is positioned frontward relative to the cup 31 along with the rotation mechanism 52, the arm 53 needs to be positioned higher to prevent interference with the wafer W fed into / out of the processing unit 22 via the feed port 23. Therefore, the module height increases, and the module could still be enlarged.

[0092] However, for the resist coating module 2, a standby section 55 with a separate nozzle 54 and a rotating mechanism 52 are arranged on one side of the cup 31 in the left-right direction, and a standby section 45 with a peripheral nozzle 44 is arranged on the other side in the left-right direction. This arrangement prevents interference between the components of the modules, such as the arms and nozzles, and between the module components and the wafer W. As a result, it prevents the module from becoming too large, which is therefore preferable.

[0093] Furthermore, for the resist coating module 2, regarding the rotation mechanism 52 and standby section 55 of the individual nozzle 54 located on one side of the cup 31 as described above, the rotation mechanism 52 is located at the rear, and the standby section 55 is located at the front. Using this configuration, as in... Figures 7-9 As shown, the resist nozzle 71 can be moved from the side opposite to the side that causes the individual nozzle 54A to retract from the ejection position towards the ejection position. Therefore, when the individual nozzle 54 and the resist nozzle 71 are moved in this way, no interference occurs between the nozzles. After the diluent ejection by the individual nozzle 54 is completed, the resist nozzle 71 can be quickly positioned in the ejection position to start the ejection of the resist, thus improving productivity.

[0094] Next, the control unit 100 constituting the resist coating module 2 (refer to...) Figure 2The control unit 100 is configured as a computer. The control unit 100 has a program storage unit (not shown). This program storage unit stores a program containing commands (step groups) to operate the resist coating module 2 as described above and subsequently, and to perform processing in each processing unit 22. Based on this program, the control unit 100 outputs control signals to each part of the resist coating module 2, thereby performing such operations. The program is stored in the program storage unit in a state where it is stored on a storage medium such as a hard disk, optical disk, magneto-optical disk, memory card, or DVD.

[0095] For the resist coating module 2, the wafer W is repeatedly fed into the wafer W in the order of processing units 22A, 22B, and 22C using the aforementioned conveying mechanism 13. Each processing unit 22 performs a series of processes on the wafer W, including cleaning, resist film formation, and EBR (Extractable Backing). If a wafer W output signal is output from the temperature adjustment module 12, the aforementioned program sets the processing arrangement for the wafer W (predetermined operation of each part of the module processing the wafer W). Furthermore, the program outputs the aforementioned control signal to perform a series of processes based on the set processing arrangement.

[0096] Figure 11 This is a timeline showing the timing of the operation of the individual nozzle 54 and the resist nozzle 71 within the processing arrangement set as described above. Hereinafter, each operation step within the consecutive periods L1 to L6 shown in this timeline will be explained. Furthermore, during periods L1 to L6, the wafer W rotates at a predetermined rotational speed. The start time of period L1 is the start time of the series of processes described above. During period L1, the individual nozzle 54 moves from the standby section 55 to the ejection position. During period L2, the diluent B1 is ejected from the individual nozzle 54, which has moved to the ejection position, onto the rotating wafer W.

[0097] During period L3, the resist nozzle 71 moves from the rear region 38 towards... Figure 8 The transition standby position movement of wafer W has been described. As will be explained in detail later, this movement to the transition standby position of wafer W can occur in two situations: the resist nozzle 71 moves from the standby section 61, and the resist nozzle 71 moves from outside the standby section 61 after processing of other wafers W has ended. The ejection of diluent B1 continues. At the beginning of period L4, the ejection of diluent B1 is stopped. During period L4, the following processes are performed sequentially: Figure 8 , Figure 9 As explained, the individual nozzle 54 retracts from the ejection position, and the resist nozzle 71 moves towards the ejection position. Furthermore, the individual nozzle 54, having retracted from the ejection position, proceeds to the standby section 55.

[0098] During period L5, resist R is ejected from the resist nozzle 71 at the ejection position. At the beginning of period L6, the ejection of resist R stops, and the resist nozzle 71 retracts to the rear region 38. Regarding this retraction to the rear region 38, as will be discussed later, depending on the subsequent transport state of the wafer W, there are cases where it returns to the standby position of the standby section 61 or does not return to the standby position. The control unit 100 constitutes a mechanism for determining the transport path of the resist nozzle 71. In this example, the ejection time of the cleaning diluent is longer than the ejection time of the resist, i.e., period L2 + L3 > period L5. Furthermore, since the same processing is performed on each wafer W, the lengths of periods L1 to L6 are the same for each substrate. Additionally, there are cases where the period L1, from the start of the movement of the individual nozzle 54 from the standby section 55, to the end of period L5, when the resist ejection from the resist nozzle 71, is recorded as continuous processing.

[0099] When the transport interval between wafer W and resist coating module 2 is relatively short, the processing arrangement for other processing units 22 that subsequently transport wafer W, relative to the processing unit 22 that transported wafer W first, is set to perform a series of processes in parallel with the series of processes performed by the processing unit 22 that transported wafer W first. More specifically, the processing arrangement is set in such a way that the periods of the described continuous processing performed between processing units 22 overlap.

[0100] As described above, for the resist coating module 2, the resist nozzle 71 and the universal arm 67 are shared structures in all processing units 22. Therefore, the processing arrangements of the other processing units 22 are set such that while one processing unit 22 is using the resist nozzle 71 and the universal arm 67, other processing units 22 are performing processing without using the resist nozzle 71 and the universal arm 67. In other words, the processing arrangements of the other processing units 22 are set based on the processing arrangements of one processing unit 22 that have already been set.

[0101] The processing arrangements for other processing units 22 are also set with reference to... Figure 12 To explain more specifically, the end time of the aforementioned period L6, in which the operation of the resist nozzle 71 and the universal arm 67 of one processing unit 22 ends, is set as t1, and the start time of the period L3, in which the operation of the resist nozzle 71 and the universal arm 67 of the other processing units 22 begins, is set as t2. The processing arrangement of the other processing units 22 is set such that the aforementioned time point t1 becomes the aforementioned time point t2, and the interval A1 between time point t1 and time point t2 is the shortest length within a range greater than or equal to a set time. Furthermore, this set time is, for example, a time longer than 0 seconds.

[0102] In other words, the shorter the wafer W transport interval from the moment wafer W (first substrate) is transported to one processing unit 22 until wafer W (second substrate) is transported to other processing units 22, the shorter the aforementioned interval A1, and the longer the time for wafer W to be processed in parallel by one processing unit 22 and other processing units 22. However, the interval A1 is not set to be shorter than the set time. Furthermore, the longer the transport interval, the longer the interval A1, and depending on the transport interval, parallel processing is no longer performed between processing units 22, but rather a series of processes begins in other processing units 22 after a series of processes have ended in one processing unit 22.

[0103] The wafer W is processed in the same way in each processing unit 22. Therefore, the interval A1 is set to be the interval at which the processing of the wafer W between processing units 22 begins. Furthermore, if a wafer W output signal is output from the temperature adjustment module 12 as described above, the processing arrangement is set, but the next output signal is output at a shorter interval from the start of processing in one processing unit 22. In this case, the interval A1 is set as described above, so the start time of the period L1 of other processing units 22 is set by retrospectively counting back a predetermined time A2 from the end of the period L5 when the resist ejection process in one processing unit 22 ends. In other words, during the processing of the wafer W in one processing unit 22, the start time of the continuous processing of the wafer W in other processing units 22 is determined based on the predetermined end time of the ejection process (the predetermined end time of continuous processing) when the resist is ejected onto the wafer W.

[0104] Regarding the above Figure 12 The following timeline is shown: One processing unit 22 is designated as 22A, and the other processing units 22 are designated as 22B. The timelines L1 to L6 are shown when the processing schedule of processing units 22B is configured as described. In this example, the interval A1 is set to the minimum set time. The reason for setting the interval A1 to be greater than 0 seconds is that even if the actual processing of one processing unit 22 is delayed relative to the processing schedule, the processing of other processing units 22 can proceed without adverse effects. Furthermore, for the wafer W with the processing schedule of the processing units 22 configured as described, the transport mechanism 13 is activated according to the start time of the processing schedule to transport the wafer W from the temperature adjustment module 12. After being transported to the processing unit 22, processing begins rapidly based on the processing schedule.

[0105] Furthermore, by setting the processing arrangement as described above, the period between the end of diluent ejection and the start of resist ejection in each processing unit 22 becomes a predetermined length. If this period is too long, the diluent will evaporate from the wafer W; if it is too short, the movement of the resist nozzle 71 towards the ejection position may not be timely. In other words, the processing arrangement of each processing unit 22 is set to prevent such adverse situations from occurring. That is, the start time of a series of processes in other processing units 22 is determined so that the time from the end of diluent ejection in one processing unit 22 to the start of resist ejection is not delayed.

[0106] Additional explanation Figure 11 , Figure 12 The operation during period L6 of the time diagram. Let's assume that at a predetermined time when wafer W is processed according to the processing schedule, for example, at the beginning of period L6, no processing schedule for the next wafer W is set, meaning there is no predetermined delivery of the next wafer W to the resist coating module 2. In this case, the resist nozzle 71, held by the universal arm 67 and spraying resist onto the wafer W, is delivered to the standby position 62 of the standby unit 61. This prevents the resist within the resist nozzle 71 from drying out. On the other hand, if a processing schedule for the next wafer W is set at the beginning of period L6, the resist nozzle 71 held by the universal arm 67 is not delivered to the standby position 62, but is positioned, for example, above the standby position 62. In cases where the wafer W delivery interval to the processing unit 22 is short, and the resist spraying interval is short, making it difficult for the resist nozzle 71 to dry out, the lifting and lowering actions required for the movement of the resist nozzle 71 to and from the standby position 62 are omitted. This allows for increased productivity. Furthermore, as such, the moving targets of the resist nozzle 71 differ within period L6, and consequently, the moving starting points of the resist nozzle 71 differ within period L3, as already described.

[0107] The following describes an example of the operation of the resist coating module 2, which sequentially feeds wafers W to processing units 22A-22C, starting from the state where wafer W is not being fed to processing units 22A-22C. As described above, wafers W are actually repeatedly fed to processing units 22A-22C, but to avoid complexity, it is assumed that only three identical batches of wafers W are continuously fed to the resist coating module 2. These wafers W are designated W1, W2, and W3 according to their feeding order to the resist coating module 2. Furthermore, in this description, it is assumed that wafers W1-W3 are fed out from the temperature adjustment module 12 at relatively short intervals. Figure 12 The interval A1, which has been explained, is set to the minimum.

[0108] With the peripheral nozzle 44, individual nozzle 54, and resist nozzle 71 in their respective standby states (Figure 13 The temperature adjustment module 12 outputs a delivery signal for wafer W1, setting the processing schedule for the processing unit 22A. Then, wafer W1 is transported to the processing unit 22A and held and rotated by the rotary chuck 34A, and processing begins according to the schedule. That is, in... Figure 11 , Figure 12 The diagram illustrates, in sequence, the actions of L1 and L2 during the process, the movement of the individual nozzle 54A from the standby section 55 to the ejection position, and the ejection of diluent B1 from the individual nozzle 54A towards the center of wafer W1. Due to centrifugal force, diluent B1 spreads across the entire surface of wafer W1, thus cleaning the surface of wafer W1.

[0109] During the processing in processing unit 22A, a delivery signal for wafer W2 is output from temperature adjustment module 12, setting the processing schedule of processing unit 22B. Meanwhile, during processing in processing unit 22A, operation L3 occurs. That is, universal arm 67 holds a resist nozzle 71 and transports it to the transition standby position of wafer W1. On the other hand, wafer W2 is transported to processing unit 22B and held and rotated by rotary chuck 34B. Figure 14 Then, in processing unit 22A, as an operation of period L4, the individual nozzle 54 moves from the ejection position toward the standby unit 55, and the resist nozzle 71 moves toward the ejection position in sequence. On the other hand, in processing unit 22B, processing begins according to the processing arrangement, and the individual nozzle 54B moves from the standby unit 55B toward the ejection position as an operation of period L1.

[0110] Next, in the processing unit 22A, the resist R, which is the action of L5 during this period, is ejected and spreads to the entire surface of the wafer W1 due to centrifugal force. Figure 15 Then, the ejection of the resist R is stopped, and as part of operation L6, the resist nozzle 71 is retracted to the rear region 38. During this period, the resist R on the surface of the wafer W1 dries to form a resist film R1. Additionally, in the processing section 22B, as part of operation L2, diluent B1 is ejected from a separate nozzle 54B at the ejection position onto the wafer W2. Figure 16 During the period when the processing units 22A and 22B are performing processing, the output signal of wafer W3 is output from the temperature adjustment module 12 to set the processing schedule of the processing unit 22C.

[0111] Subsequently, in processing unit 22A, the peripheral nozzle 44A is moved to the processing position, spraying diluent B2 onto the periphery of wafer W1, thus removing the resist film R1 at the periphery of wafer W1. During this period, in processing unit 22B, as part of period L3, the resist nozzle 71 is moved to the transition standby position. Furthermore, since the processing arrangement of processing unit 22B is set at the beginning of period L6 in processing unit 22A, as described above, the resist nozzle 71 is not conveyed to standby unit 61, but is directly conveyed to the aforementioned transition standby position. On the other hand, wafer W3 is conveyed to processing unit 22C and held and rotated by rotary chuck 34C. Figure 17 ).

[0112] Then, in processing unit 22A, the ejection of diluent B2 from peripheral nozzle 44A is stopped, peripheral nozzle 44A is retracted to standby unit 45A, and the processed wafer W1 is sent out from processing unit 22A. During this period, in processing unit 22B, as operation L4, the retraction of individual nozzle 54B from the ejection position and the movement of resist nozzle 71 to the ejection position are performed sequentially. On the other hand, in processing unit 22C, processing begins according to the processing schedule, and the movement of individual nozzle 54C from standby unit 55C to the ejection position as operation L1 is performed.

[0113] Next, in the processing unit 22B, as part of the operation of period L5, the resist R is sprayed out ( Figure 18 Then, the ejection of the resist R is stopped, and as part of operation L6, the resist nozzle 71 is retracted to the rear region 38. During this period, the resist R on the surface of wafer W2 dries to form a resist film R1. Meanwhile, in processing unit 22C, as part of operation L2, diluent B1 is ejected from a separate nozzle 54C at the ejection position onto wafer W3. Figure 19 ).

[0114] Subsequently, in processing unit 22B, peripheral nozzle 44B moves to the processing position and sprays diluent B2 onto the periphery of wafer W2, removing the resist film R1 at the periphery of wafer W2. During this period, in processing unit 22C, as part of operation L3 ( Figure 20 ), and the resist nozzle 71 is moved directly to the transition standby position.

[0115] Then, in processing unit 22B, the ejection of diluent B2 from peripheral nozzle 44B stops, peripheral nozzle 44B retracts to standby unit 45, and the processed wafer W2 is sent out. During this period, in processing unit 22C, as operation L4, individual nozzle 54C retracts from the ejection position, resist nozzle 71 moves to the ejection position, and as operation L5, resist R is ejected.Figure 21 After the resist R is ejected, as part of the action L6, the resist nozzle 71 retracts to the rear region 38. Since no processing schedule for the next wafer W is set, the resist nozzle 71 is conveyed to the standby unit 61 and stands in the standby position 62. On the other hand, in the processing unit 22C, the peripheral nozzle 44C moves to the processing position and ejects diluent B2 onto the periphery of the wafer W3, removing the resist film R1 at the periphery of the wafer W3. Figure 22 After that, wafer W3 was sent out from processing unit 22C.

[0116] As described above, for the resist coating module 2, individual nozzles 54 for cleaning and peripheral nozzles 44 for EBR are provided on a per-processing-unit basis for each processing unit 22. Furthermore, resist nozzles 71 used for resist coating, which are used after the cleaning process, are shared among the processing units 22. These individual nozzles 54, resist nozzles 71, and peripheral nozzles 44 can move independently between the standby section outside the cup 31 and the wafer W. Therefore, when the wafer W is subsequently fed into other processing units 22, during the cleaning process and / or the movement of the individual nozzles 54 for cleaning, resist coating and / or movement of the resist nozzles 71 from one processing unit 22 to another processing unit 22 can be performed, even while the wafer W is being cleaned and / or the individual nozzles 54 for cleaning are being moved. Additionally, regardless of the processing of the wafer W in other processing units 22, EBR processing can be performed in one processing unit 22. Because of this, a high productivity can be achieved for the resist coating module 2.

[0117] In particular, when the spraying time of the diluent by the individual nozzle 54 is longer than the spraying time of the resist by the resist nozzle 71, as described above, it is advantageous to be able to spray the resist of the processing unit 22 and move the resist nozzle 71 during that spraying time, as already described, thereby preventing a decrease in productivity. Moreover, as already described, in the resist coating module 2, the individual nozzle 54 is moved by the rotation mechanism 52, and the peripheral nozzle 44 is moved by the linear motion mechanism 41, thereby saving space in the module.

[0118] The coating apparatus described in Patent Document 1, as mentioned above, is equipped with numerous nozzles, all of which are standardized within the processing unit (processing section). Consequently, since processing in one processing unit is followed by processing in another, it is difficult to improve productivity. Furthermore, in Patent Document 1, each nozzle is similarly conveyed from the rear of the processing unit to that unit using a common nozzle delivery mechanism. In other words, Patent Document 1 lacks the concept of flexibly utilizing both linear and rotary movements depending on the nozzle when nozzles with different functions are provided, as in this disclosure, thereby preventing the apparatus from becoming too large.

[0119] Furthermore, as described above, during the dispensing of the diluent by the individual nozzle 54, the resist nozzle 71 remains in a transition standby position on the wafer W. Therefore, a rapid switch from cleaning to resist dispensing can be achieved, thus reliably increasing productivity. Moreover, the longer the dispensing time of the diluent compared to the resist dispensing time, and the greater the difference in their dispensing times, the easier it is to keep the resist nozzle 71 in the aforementioned transition standby position during the diluent dispensing process. In other words, it is easy to arrange the processing sequence such that after processing by the resist nozzle 71 in one processing unit 22, and before the diluent dispensing in other processing units 22 ends, the resist nozzle 71 is positioned in the transition standby position. That is, even if the resist nozzle 71 is generalized in the processing unit 22, its operation does not restrict the processing of the wafer W, thus suppressing the waiting time until resist coating is applied to the wafer W, thereby reliably achieving higher productivity.

[0120] Furthermore, as already described, the processing arrangement of wafers W in other processing units 22 is determined based on the processing status of wafers W in one processing unit 22. For example... Figure 12 The processing arrangement was determined in a way that allows for a longer overlap between the processing arrangements of each processing unit 22, as explained in the description. Therefore, productivity can be improved more reliably when processing multiple wafers W continuously.

[0121] The following describes a processing procedure different from the previously described processing procedure for the diluent and photoresist. A photoresist nozzle 71 is configured to spray photoresist to a first position offset from the center of the rotating wafer W, and a separate nozzle 54 is configured to spray diluent B1 to a second position closer to the periphery of the wafer W than the first position. The photoresist R and diluent B1 are sprayed separately. Figure 23As shown, the resist nozzle 71 is moved laterally such that the position from which the resist R is sprayed is moved towards the center of the wafer W, thus mitigating the impact of the resist R on the wafer W during contact with the resist and suppressing scattering from the contact point. By supplying the resist R and diluent B1 in this way, a layer of resist R is formed on the wafer W, located in the center, and the diluent B1 is supplied to the wafer W to surround this layer. Then, the rotational speed of the wafer W is increased. As a result, at the periphery of the wafer W after the diluent B1 has been supplied, the resist R expands in a manner that provides higher coverage to the periphery, ensuring that the entire surface of the wafer W is more reliably covered by the resist R.

[0122] In Figure 23 In the processing, the time periods for spraying diluent B1 and spraying resist R can be not clearly distinguished. That is, it is not limited to starting spraying from one nozzle after finishing spraying from another; the time periods for spraying resist R and spraying diluent B1 can be processed in an overlapping manner. Figure 23 In this context, the resist R and diluent B1 are represented by overlapping spraying time periods. Alternatively, when the processing procedure is set such that the spraying time periods of diluent B1 and resist R overlap, the universal arm 67 holding the resist nozzle 71 operates at a time corresponding to this processing procedure. Furthermore, when performing this... Figure 23 In the case of the processing procedure described, the movement trajectories D1 to D3 of each nozzle described do not overlap above the center of the wafer W, which is therefore preferable.

[0123] Furthermore, the processing liquid supplied from the peripheral nozzle 44 is not limited to a diluent. For example, a processing liquid for forming a protective film can be sprayed instead of a diluent, and the protective film can be used to cover the periphery of the wafer W after the resist film has been formed. This protective film is used to prevent film peeling at the periphery of the wafer W. Furthermore, in the case of forming such a protective film, there is a requirement for high uniformity of the film thickness of the wafer W in the circumferential direction. If the peripheral nozzle 44 is moved using a rotating mechanism as described above, and the liquid application position is shifted radially to change the width of the area where the protective film is formed, the liquid application position will also deviate in the circumferential direction of the wafer W. Therefore, the uniformity of the film thickness of the wafer W in the circumferential direction may decrease. From the viewpoint of preventing the above situation, it is also preferable to move the peripheral nozzle 44 using a linear motion mechanism 41 as described above.

[0124] Alternatively, if the spraying time of the resist is longer than the spraying time of the diluent from the nozzle used for cleaning (pre-wetting), it is possible to share the nozzle for spraying the diluent in each processing unit 22, while the nozzle for spraying the resist is set up on a unit basis for each processing unit 22. In other words, the nozzle with a longer spraying time is set up on a unit basis for each processing unit 22, while the nozzle with a shorter spraying time is shared across all processing units 22. With this structure, it is possible to spray the treatment liquid from the nozzle with the longer spraying time and / or to move the nozzle with the shorter spraying time between processing units 22 during the spraying process from the nozzle with the longer spraying time. Therefore, productivity can be improved.

[0125] Alternatively, the camera used to capture images of the resist nozzle 71 held on the universal arm 67 from a different direction than the camera 84 located on the universal arm 67 described above can be fixed relative to the cup 31. Alternatively, instead of a camera 84, multiple cameras that capture images of the resist nozzle 71 held on the resist nozzle 71 from different directions can be fixed to the cup 31. Images obtained from cameras fixed relative to the cup 31 are used, in the same way as images obtained from camera 84, for detecting various anomalies.

[0126] Alternatively, it could be based on Figure 12 The time difference between the start time of a series of processes in one processing unit 22 and the start time of a series of processes in another processing unit 22 determines whether to put the resist nozzle 71, which has finished its use in one processing unit 22, into standby position 62 in standby unit 61. That is, if the time difference is shorter than a predetermined set time, the resist nozzle 71 is not delivered to standby position 62, but is instead placed above, for example, standby position 62. On the other hand, if the time difference is longer than or equal to the predetermined set time, the resist nozzle 71 is delivered to standby position 62 and is put into standby position.

[0127] Alternatively, multiple individual nozzles 54 for spraying different types of diluents can be provided on the aforementioned arm 53, with the diluent sprayed from any selected individual nozzle 54. Furthermore, the number of processing units 22 is not limited to three; it can be four or more. Alternatively, the number of processing units 22 can be two. However, by sharing the resist supply mechanism 6 for a larger number of processing units 22, when multiple resist coating modules 2 are provided in the device, the number of modules and the supply lines for the processing liquid can be reduced, thereby lowering the manufacturing cost of the device. Additionally, manufacturing and maintenance time can be reduced. As described above, using resist coating modules 2, even with a larger number of processing units 22, can suppress the decrease in productivity, which is advantageous. Moreover, the coating apparatus of this disclosure is not limited to a structure that forms a resist film by coating resist. The technology of this disclosure can also be applied to, for example, an apparatus for forming an anti-reflective film by coating a processing liquid for forming an anti-reflective film, or an apparatus for forming an insulating film by coating a processing liquid for forming an insulating film. In other words, it is also possible to supply the processing liquid for forming these films to the processing unit 22 from a common nozzle.

[0128] Furthermore, the embodiments disclosed herein should be considered illustrative in all respects and not restrictive. Without departing from the appended claims and their spirit, the above embodiments can be omitted, substituted, or modified in various forms.

Claims

1. A liquid treatment device, characterized in that, This liquid treatment device has the following features: Multiple substrate holding sections, each holding a substrate; The first nozzle is provided on a unit of each substrate holding portion in order to spray the first processing liquid onto the substrate at a first spraying position held on the substrate of each substrate holding portion. The second nozzle moves independently relative to the first nozzle and sprays a second processing liquid, different from the first processing liquid, onto the substrate held on each of the substrate holding portions at a second ejection position, in a manner that is later than the ejection of the first processing liquid. The second nozzle is shared by the plurality of substrate holding portions. The first standby unit and the second standby unit enable the first nozzle and the second nozzle to standby outside the holding area where the substrate is held by each substrate holding unit when viewed from above; A rotating mechanism that rotates the first nozzle between the first standby position and the first ejection position when viewed from above; and Control Department The substrate held in one of the substrate holding portions is designated as the first substrate, and the substrate held in the other substrate holding portion is designated as the second substrate. The time from when the first nozzle begins to move from the first standby section to the time when the second nozzle stops spraying the second treatment liquid is defined as continuous processing. During the execution of the continuous processing on the first substrate, the control unit determines the time to start the continuous processing on the second substrate based on the time when the continuous processing ends.

2. The liquid treatment apparatus according to claim 1, characterized in that, Except for the case where the first ejection position and the second ejection position are set to a common ejection position that overlaps when viewed from above, the first movement trajectory of the first nozzle between the first standby unit and the first ejection position when viewed from above does not overlap with the second movement trajectory of the second nozzle between the second standby unit and the second ejection position when viewed from above.

3. The liquid treatment apparatus according to claim 1, characterized in that, During the process of spraying the first processing liquid from the first nozzle onto the substrate, the second nozzle stands at a position on the substrate that is horizontally offset from the second spray position that overlaps with the first spray position.

4. The liquid treatment apparatus according to any one of claims 1 to 3, characterized in that, The liquid treatment apparatus is provided with a decision mechanism that, based on whether there is a predetermined transport of the second substrate to another substrate holding portion during the execution of the continuous processing of the first substrate, determines whether the second nozzle should move towards the second standby portion after spraying the second processing liquid onto the first substrate, or should not move the second nozzle towards the second standby portion but instead move it toward the second spray position corresponding to the second substrate.

5. The liquid treatment apparatus according to any one of claims 1 to 3, characterized in that, The liquid treatment apparatus is provided with a decision mechanism that, based on the interval between the start time of the continuous treatment of the first substrate held in one of the substrate holding portions and the start time of the continuous treatment of the second substrate held in another substrate holding portion, determines whether to move the second nozzle toward the second standby portion after spraying the second treatment liquid onto the first substrate, or not to move the second nozzle toward the second standby portion but to move it toward the second spray position corresponding to the second substrate.

6. A liquid treatment method, characterized in that, This liquid treatment method has the following features: The process of holding the substrate in multiple substrate holding portions; The process of spraying a first processing liquid onto each substrate by disposing a first nozzle, which is provided on each of the substrate holding portions, at a first ejection position on the substrate held by each of the substrate holding portions. The process of moving a second nozzle, which is shared by the plurality of substrate holding portions, independently relative to the first nozzle, and positioning it at a second ejection position on the substrate held by each of the substrate holding portions; A process in which a second processing liquid, different from the first processing liquid, is sprayed from the second nozzle at the second spraying position onto the substrate in a manner that is later than the spraying of the first processing liquid from the first nozzle onto the substrate; as well as The process of moving each of the first nozzles in a manner that allows them to rotate between a first standby section and a first ejection position when viewed from above, wherein the first standby section is for each of the first nozzles to stand by outside the holding area of ​​the substrate held by each of the substrate holding sections when viewed from above. The substrate held in one of the substrate holding portions is designated as the first substrate, and the substrate held in the other substrate holding portion is designated as the second substrate. The time from when the first nozzle begins to move from the first standby section to the time when the second nozzle stops spraying the second treatment liquid is defined as continuous processing. During the execution of the continuous processing on the first substrate, the time to start the continuous processing on the second substrate is determined based on the time when the continuous processing ends.

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