Wafer processing method and device and electronic equipment

Abstract

The invention provides a wafer processing method and device and electronic equipment, and belongs to the technical field of semiconductor manufacturing. The wafer processing method comprises the following steps: coating a to-be-processed wafer with photoresist, and irradiating the surface of the wafer with ultraviolet light at a specific polarization angle, so that the intensity of light received by an area where a bulge on the surface of the wafer is located is greater than the intensity of light received by other areas of the wafer; developing the photoresist to form a photoresist opening which exposes the bulge; and the projection is oxidized through the photoresist opening, and the oxidized projection is removed through an etching process. According to the technical scheme, the protrusions on the surface of the wafer can be effectively removed.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a wafer processing method and apparatus, and an electronic device. Background Technology

[0002] During wafer manufacturing, tiny but sharp local protrusions may form on the wafer surface (such as particle residue, etching residue, or micro-protrusions from the process). Although these local protrusions are limited in height, their sharp shape makes them prone to becoming stress concentration points in subsequent processes, causing serious defects such as wafer breakage and cracking, reducing wafer yield, and also endangering the safety of related equipment. Summary of the Invention

[0003] To address the aforementioned technical problems, this invention provides a wafer processing method, apparatus, and electronic device that can effectively remove protrusions from the wafer surface.

[0004] To achieve the above objectives, the technical solution adopted in the embodiments of the present invention is as follows:

[0005] A wafer processing method, comprising:

[0006] Photoresist is coated on the wafer to be processed, and ultraviolet light is used to irradiate the surface of the wafer at a specific polarization angle, so that the light intensity received by the area where the protrusions are located on the wafer surface is greater than the light intensity received by other areas of the wafer.

[0007] The photoresist is developed to form a photoresist opening that exposes the protrusion;

[0008] The protrusion is oxidized through the photoresist opening, and the oxidized protrusion is removed by an etching process.

[0009] In some embodiments, the height of the protrusion is 10nm-100nm, and the diameter of the protrusion is greater than or equal to 20nm.

[0010] In some embodiments, oxidizing the protrusion through the photoresist opening and removing the oxidized protrusion by an etching process includes:

[0011] A copper film is deposited on the protrusion through the photoresist opening;

[0012] The wafer is treated with hydrogen peroxide, which decomposes under the catalysis of copper ions to generate free radicals that oxidize the bumps and form silicon dioxide.

[0013] The silicon dioxide was removed using hydrofluoric acid.

[0014] In some embodiments, the treatment of the wafer with hydrogen peroxide includes:

[0015] The wafer is immersed in hydrogen peroxide at a temperature of 20-30℃, and the hydrogen peroxide is stirred at a speed of 180-200 rpm for 80-90 seconds.

[0016] In some embodiments, after removing the oxidized bumps by an etching process, the method further includes removing photoresist, metal, and particulate matter from the wafer.

[0017] In some embodiments, removing the photoresist on the wafer includes:

[0018] The wafer was ultrasonically cleaned for 8-10 minutes using a constant-temperature dimethyl sulfoxide solution at 50-60℃.

[0019] In some embodiments, removing the metal from the wafer includes:

[0020] The wafer is cleaned for 20-30 seconds using HNO3 solvent at a temperature of 20-25℃ and a concentration of 0.4-0.5%.

[0021] In some embodiments, removing particulate matter from the wafer includes:

[0022] The wafer is cleaned with SC-1 solvent at a temperature of 70-75℃ for 8-10 minutes.

[0023] This invention also provides a wafer processing apparatus, comprising:

[0024] The coating mechanism is configured to coat photoresist on a wafer to be processed and to irradiate the surface of the wafer with ultraviolet light at a specific polarization angle, such that the light intensity received by the area where the protrusions are located on the wafer surface is greater than the light intensity received by other areas of the wafer.

[0025] A developing mechanism is configured to develop the photoresist to form a photoresist opening that exposes the raised protrusion.

[0026] An oxidation etching mechanism is configured to oxidize the protrusion through the photoresist opening and remove the oxidized protrusion through an etching process.

[0027] This invention also provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor; when the processor executes the program, it implements the wafer processing method described above.

[0028] The beneficial effects of this invention are:

[0029] In this embodiment, photoresist is coated onto the wafer to be processed. Ultraviolet light is irradiated onto the surface of the wafer at a specific polarization angle, ensuring that the light intensity received by the protruding areas on the wafer surface is greater than that received by other areas. This develops the photoresist, forming photoresist openings that expose the protrusions. The protrusions are then oxidized through these openings, transforming them into silicon dioxide. Finally, an etching process removes the oxidized protrusions. This embodiment effectively eliminates sharp protrusions on the wafer, preventing them from becoming stress concentration points in subsequent processes. This reduces the risk of wafer breakage, cracking, and scratches, improves wafer stability, and prevents broken wafers from jeopardizing the safety of related equipment. Attached Figure Description

[0030] Figure 1 A schematic diagram showing a sharp protrusion structure on a wafer;

[0031] Figure 2 A schematic flowchart illustrating the wafer processing method according to an embodiment of the present invention;

[0032] Figure 3 This is a schematic diagram illustrating the process of oxidizing protrusions according to an embodiment of the present invention;

[0033] Figure 4 This is a schematic diagram illustrating the process of stripping photoresist and cleaning the wafer according to an embodiment of the present invention;

[0034] Figure 5 This diagram illustrates the composition of a wafer processing apparatus according to an embodiment of the present invention.

[0035] Figure 6 This is a schematic diagram showing the structure of an electronic device according to an embodiment of the present invention. Detailed Implementation

[0036] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the described embodiments of the present invention are within the scope of protection of the present invention.

[0037] like Figure 1 As shown, during the wafer manufacturing process, tiny but sharp local protrusions are formed on the wafer surface (as shown in the red box in the figure). The cleaning and polishing processes in related technologies have limited ability to handle the tiny sharp structures on the wafer and cannot effectively remove them. This invention provides a wafer processing method, apparatus, and electronic device that can effectively remove the protrusions on the wafer surface.

[0038] This invention provides a wafer processing method, such as... Figure 2 As shown, it includes:

[0039] Step S1: Coat the wafer to be processed with photoresist, and use ultraviolet light to irradiate the surface of the wafer at a specific polarization angle, so that the light intensity received by the area where the protrusions are located on the surface of the wafer is greater than the light intensity received by other areas of the wafer.

[0040] Step S2: Develop the photoresist to form a photoresist opening that exposes the protrusion;

[0041] Step S3: Oxidize the protrusion through the photoresist opening, and remove the oxidized protrusion through an etching process.

[0042] In this embodiment, photoresist is coated onto the wafer to be processed. Ultraviolet light is irradiated onto the surface of the wafer at a specific polarization angle, ensuring that the light intensity received by the protruding areas on the wafer surface is greater than that received by other areas. This develops the photoresist, forming photoresist openings that expose the protrusions. The protrusions are then oxidized through these openings, transforming them into silicon dioxide. Finally, an etching process removes the oxidized protrusions. This embodiment effectively eliminates sharp protrusions on the wafer, preventing them from becoming stress concentration points in subsequent processes. This reduces the risk of wafer breakage, cracking, and scratches, improves wafer stability, and prevents broken wafers from jeopardizing the safety of related equipment.

[0043] In some embodiments, the height of the protrusion is 10nm-100nm, such as 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, or 100nm, and the diameter of the protrusion is greater than or equal to 20nm, such as 20nm, 25nm, or 30nm. The technical solution of this embodiment can effectively remove protrusions with a height of 10nm-100nm and a diameter greater than or equal to 20nm.

[0044] In this embodiment, before removing the bumps on the wafer, a flatness inspection device can be used to inspect the sharp bumps (such as...) on the wafer surface. Figure 1 The height of the protrusion (as shown) is measured, and the specific polarization angle is adjusted according to the height of the protrusion so that when the wafer is irradiated with ultraviolet light, the light intensity received at the top of the protrusion tip is much higher than the light intensity received by other areas of the wafer.

[0045] After coating the wafer with photoresist, ultraviolet light with a wavelength of λ is used to illuminate the wafer surface at a specific polarization angle. Utilizing the localized light field enhancement effect generated by the nanoscale bumps at the near-field optical scale, the light intensity received at the tip of the bump is significantly higher than that received by other areas of the wafer. This high-intensity illumination causes a thorough photochemical reaction in the photoresist at the bumps, while the reaction is minimal in areas with weaker light intensity. Subsequently, the wafer is placed in a developing solution, where only the modified photoresist at the bump tips is rapidly dissolved, forming photoresist openings smaller than 20 nm.

[0046] The bumps on the wafer are made of silicon, which is difficult to remove through etching. Therefore, it is necessary to oxidize the bumps through the openings in the photoresist, and then remove the oxidized bumps through etching. Specifically, as... Figure 3 As shown, a copper film can be deposited on the protrusion through the photoresist opening, and the wafer can be treated with hydrogen peroxide (H2O2). The copper ions (Cu) generated by the hydrogen peroxide on the copper film... + The decomposition of the protrusions under the catalysis of hydrogen peroxide produces OH radicals, which can oxidize the silicon-based protrusions, converting them into silicon dioxide. The wafer can then be treated with hydrofluoric acid (HF) to dissolve the silicon dioxide in the protrusions, generating H₂SiF₄. Specifically, when treating the wafer with hydrogen peroxide, polyethylene glycol-isooctylphenyl ether (Triton X-100) can be used to wet the wafer surface, promoting the reaction between the protrusions and hydrofluoric acid.

[0047] In some embodiments, the treatment of the wafer with hydrogen peroxide includes:

[0048] The wafer is immersed in hydrogen peroxide at a temperature of 20-30°C, and the hydrogen peroxide is stirred at a speed of 180-200 rpm for 80-90 seconds. Specifically, the temperature of the hydrogen peroxide can be 20°C, 21°C, 22°C, 23°C, 24°C, 25°C, 26°C, 27°C, 28°C, 29°C, or 30°C, and the stirring speed can be 180 rpm, 190 rpm, or 200 rpm. The immersion time can be 80 s, 81 s, 82 s, 83 s, 84 s, 85 s, 86 s, 87 s, 88 s, 89 s, or 90 s; this allows the hydrogen peroxide to fully react with the bumps, so that all the material of the bumps is converted into silicon dioxide.

[0049] In some embodiments, after removing the oxidized bumps by etching, the method further includes removing photoresist, metal and particulate matter from the wafer, thereby removing contaminants from the wafer surface and preventing contaminated wafers from flowing into subsequent processes.

[0050] In some embodiments, removing the photoresist on the wafer includes:

[0051] The wafer is ultrasonically cleaned for 8-10 minutes using a constant-temperature dimethyl sulfoxide (DMSO) solution at 50-60°C. DMSO is a sulfur-containing organic compound that can dissolve most organic compounds, many inorganic salts, and polymers. Specifically, the temperature of the DMSO solution can be 50°C, 51°C, 52°C, 53°C, 54°C, 55°C, 56°C, 57°C, 58°C, 59°C, or 60°C, and the ultrasonic cleaning time can be 8 minutes, 8.5 minutes, 9 minutes, 9.5 minutes, or 10 minutes. The DMSO solution effectively removes residual photoresist from the wafer.

[0052] In some embodiments, removing the metal from the wafer includes:

[0053] The wafer is cleaned for 20-30 seconds using an HNO3 solvent at a temperature of 20-25°C and a concentration of 0.4-0.5%. Specifically, the temperature of the HNO3 solvent can be 20°C, 21°C, 22°C, 23°C, 24°C, or 25°C, the concentration of the HNO3 solvent can be 0.4%, 0.45%, or 0.5%, and the cleaning time can be 20s, 21s, 22s, 23s, 24s, 25s, 26s, 27s, 28s, 29s, or 30s. The HNO3 solvent can effectively remove residual copper and etching residues from the wafer.

[0054] In some embodiments, removing particulate matter from the wafer includes:

[0055] The wafer is cleaned for 8-10 minutes using SC-1 solvent at a temperature of 70-75℃. The temperature of the SC-1 solvent can be 70℃, 71℃, 72℃, 73℃, 74℃, or 75℃, and the cleaning time can be 8 minutes, 8.5 minutes, or 9 minutes. SC-1 solvent is a typical wet chemical mixture solution with the following standard composition and ratio: 5 parts deionized water (as a base and diluent), 1 part hydrogen peroxide (usually 30% concentration, as a strong oxidant), and 1 part ammonia (usually 25-29% concentration, providing an alkaline environment). In the alkaline environment of ammonia, the hydrogen peroxide in the SC-1 solvent decomposes to produce highly reactive hydroxyl radicals. These radicals can effectively oxidize and decompose large organic molecules, converting them into water-soluble small molecules (such as carbon dioxide and water). Therefore, SC-1 solvent can effectively remove photoresist residue, grease, dust, and other organic molecules. Furthermore, the ammonia in SC-1 solvent can form soluble complexes with many metal ions, causing them to dissociate from the wafer surface and enter the solution. Simultaneously, the oxidizing effect of hydrogen peroxide converts metals to higher valence states, making them easier to complex with ammonia. Therefore, SC-1 solvent can effectively remove metal ions. The ammonia in SC-1 solvent also slightly and isotropically corrodes the silicon surface (corrosion rate approximately 0.1-0.3 nm / min). This slight "sacrificial" corrosion can "flip over" particles attached to the wafer surface. At the same time, both the wafer and particle surfaces become negatively charged under alkaline conditions. Due to the repulsion of like charges, once particles detach, they are difficult to reattach to the wafer. Thus, SC-1 solvent can effectively remove particulate matter from the wafer.

[0056] In a specific example, such as Figure 4 As shown, the wafer can be ultrasonically cleaned for 10 minutes using a constant-temperature dimethyl sulfoxide (DMSO) solution at 60°C, then cleaned for 30 seconds using a 0.5% HNO3 solvent at 25°C, and finally cleaned for 10 minutes using an SC-1 solvent at 75°C to obtain a clean wafer.

[0057] This invention also provides a wafer processing apparatus 100, such as... Figure 5 As shown, it includes:

[0058] The coating mechanism 101 is configured to coat photoresist on a wafer to be processed and to irradiate the surface of the wafer with ultraviolet light at a specific polarization angle, such that the light intensity received by the area where the protrusions on the wafer surface are located is greater than the light intensity received by other areas of the wafer.

[0059] The developing unit 102 is configured to develop the photoresist to form a photoresist opening that exposes the raised protrusion.

[0060] The oxidation etching mechanism 103 is configured to oxidize the protrusion through the photoresist opening and remove the oxidized protrusion through an etching process.

[0061] In this embodiment, photoresist is coated onto the wafer to be processed. Ultraviolet light is irradiated onto the surface of the wafer at a specific polarization angle, ensuring that the light intensity received by the protruding areas on the wafer surface is greater than that received by other areas. This develops the photoresist, forming photoresist openings that expose the protrusions. The protrusions are then oxidized through these openings, transforming them into silicon dioxide. Finally, an etching process removes the oxidized protrusions. This embodiment effectively eliminates sharp protrusions on the wafer, preventing them from becoming stress concentration points in subsequent processes. This reduces the risk of wafer breakage, cracking, and scratches, improves wafer stability, and prevents broken wafers from jeopardizing the safety of related equipment.

[0062] In some embodiments, the oxidation etching mechanism 103 is configured to deposit a copper film on the bump through the photoresist opening; treat the wafer with hydrogen peroxide, which decomposes under the catalysis of copper ions to generate free radicals that oxidize the bump to form silicon dioxide; and remove the silicon dioxide using hydrofluoric acid.

[0063] The bumps on the wafer are made of silicon, which is difficult to remove through etching. Therefore, it is necessary to oxidize the bumps through the openings in the photoresist, and then remove the oxidized bumps through etching. Specifically, as... Figure 3 As shown, a copper film can be deposited on the protrusion through the photoresist opening, and the wafer can be treated with hydrogen peroxide (H2O2). The copper ions (Cu) generated by the hydrogen peroxide on the copper film... + The decomposition of the protrusions under the catalysis of hydrogen peroxide produces OH radicals, which can oxidize the silicon-based protrusions, converting them into silicon dioxide. The wafer can then be treated with hydrofluoric acid (HF) to dissolve the silicon dioxide in the protrusions, generating H₂SiF₄. Specifically, when treating the wafer with hydrogen peroxide, polyethylene glycol-isooctylphenyl ether (Triton X-100) can be used to wet the wafer surface, promoting the reaction between the protrusions and hydrofluoric acid.

[0064] In some embodiments, the oxidation etching mechanism 103 is configured to immerse the wafer in hydrogen peroxide at a temperature of 20-30°C and stir the hydrogen peroxide at a rotation speed of 180-200 rpm for 80-90 seconds. Specifically, the temperature of the hydrogen peroxide can be 20°C, 21°C, 22°C, 23°C, 24°C, 25°C, 26°C, 27°C, 28°C, 29°C, or 30°C, and the rotation speed can be 180 rpm, 190 rpm, or 200 rpm. The immersion time can be 80 s, 81 s, 82 s, 83 s, 84 s, 85 s, 86 s, 87 s, 88 s, 89 s, or 90 s; this allows the hydrogen peroxide to fully react with the bumps, so that all the material of the bumps is converted into silicon dioxide.

[0065] In some embodiments, the apparatus further includes:

[0066] The cleaning unit is configured to remove photoresist, metal, and particulate matter from the wafer. This removes contaminants from the wafer surface, preventing contaminated wafers from flowing into subsequent processes.

[0067] In some embodiments, the cleaning mechanism is configured to ultrasonically clean the wafer for 8-10 minutes using a constant-temperature dimethyl sulfoxide (DMSO) solution at 50-60°C. DMSO is a sulfur-containing organic compound capable of dissolving most organic compounds, many inorganic salts, and polymers. Specifically, the temperature of the DMSO solution can be 50°C, 51°C, 52°C, 53°C, 54°C, 55°C, 56°C, 57°C, 58°C, 59°C, or 60°C, and the ultrasonic cleaning duration can be 8 minutes, 8.5 minutes, 9 minutes, 9.5 minutes, or 10 minutes. The DMSO solution effectively removes residual photoresist from the wafer.

[0068] In some embodiments, the cleaning mechanism is configured to clean the wafer for 20-30 seconds using an HNO3 solvent at a temperature of 20-25°C and a concentration of 0.4-0.5%. Specifically, the temperature of the HNO3 solvent can be 20°C, 21°C, 22°C, 23°C, 24°C, or 25°C, the concentration of the HNO3 solvent can be 0.4%, 0.45%, or 0.5%, and the cleaning time can be 20s, 21s, 22s, 23s, 24s, 25s, 26s, 27s, 28s, 29s, or 30s. The HNO3 solvent can effectively remove residual copper and etching residues from the wafer.

[0069] In some embodiments, the cleaning unit is configured to clean the wafer for 8-10 minutes using SC-1 solvent at a temperature of 70-75°C. The temperature of the SC-1 solvent can be 70°C, 71°C, 72°C, 73°C, 74°C, or 75°C, and the cleaning time can be 8 minutes, 8.5 minutes, or 9 minutes. SC-1 solvent is a typical wet chemical mixture solution with the following standard composition and ratio: 5 parts deionized water (as a base and diluent), 1 part hydrogen peroxide (typically 30% concentration, as a strong oxidant), and 1 part ammonia (typically 25-29% concentration, providing an alkaline environment). In the alkaline environment of ammonia, the hydrogen peroxide in the SC-1 solvent decomposes to generate highly reactive hydroxyl radicals. These radicals can effectively oxidize and decompose large organic molecules, turning them into water-soluble small molecules (such as carbon dioxide and water). Therefore, SC-1 solvent can effectively remove organic molecules such as photoresist residue, grease, and dust. Furthermore, the ammonia in SC-1 solvent can form soluble complexes with many metal ions, causing them to dissociate from the wafer surface and enter the solution. Simultaneously, the oxidizing effect of hydrogen peroxide converts metals to higher valence states, making them easier to complex with ammonia. Therefore, SC-1 solvent can effectively remove metal ions. The ammonia in SC-1 solvent also slightly and isotropically corrodes the silicon surface (corrosion rate approximately 0.1-0.3 nm / min). This slight "sacrificial" corrosion can "flip over" particles attached to the wafer surface. At the same time, both the wafer and particle surfaces become negatively charged under alkaline conditions. Due to the repulsion of like charges, once particles detach, they are difficult to reattach to the wafer. Thus, SC-1 solvent can effectively remove particulate matter from the wafer.

[0070] Please refer to Figure 6 The present invention also provides an electronic device 200, including a processor 201, a memory 202, and a computer program stored in the memory 202 and executable on the processor 201. When the computer program is executed by the processor 201, it implements the various processes of the above-described wafer processing method embodiments and achieves the same technical effect. To avoid repetition, it will not be described again here.

[0071] This application also provides a computer program product, including computer instructions, which, when executed by a processor, implement the above-described... Figure 2 The various processes of the method embodiments shown can achieve the same technical effect, and will not be described again here to avoid repetition.

[0072] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0073] Through the above description of the embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus necessary general-purpose hardware platforms. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk) and includes several instructions to cause a terminal (which may be a mobile phone, computer, server, air conditioner, or network device, etc.) to execute the methods described in the various embodiments of the present invention.

[0074] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of the present invention without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of the present invention.

Claims

1. A wafer processing method, characterized by, The method comprises: coating photoresist on a wafer to be processed, and irradiating the surface of the wafer with ultraviolet light at a specific polarization angle, so that the area of the wafer surface where the protrusions are located receives light intensity greater than the other areas of the wafer; developing the photoresist to form photoresist openings that expose the protrusions; oxidizing the protrusions through the photoresist openings and removing the oxidized protrusions through an etching process.

2. The wafer processing method of claim 1, wherein, The height of the protrusions is 10-100 nm, and the diameter of the protrusions is greater than or equal to 20 nm.

3. The wafer processing method of claim 1, wherein, The method further comprises: plating a layer of copper film on the protrusions through the photoresist openings; treating the wafer with hydrogen peroxide, which decomposes to generate free radicals to oxidize the protrusions and form silicon dioxide under the catalysis of copper ions; removing the silicon dioxide with hydrofluoric acid.

4. The wafer processing method of claim 3, wherein, The method further comprises: immersing the wafer in hydrogen peroxide with a temperature of 20-30°C and stirring the hydrogen peroxide at a speed of 180-200 rpm for 80-90 s.

5. The wafer processing method of claim 1, wherein After removing the oxidized protrusions through the etching process, the method further comprises removing the photoresist, metal, and particulate matter on the wafer.

6. The wafer processing method of claim 5, wherein, The method further comprises: ultrasonically cleaning the wafer with a constant temperature dimethyl sulfoxide solution at 50-60°C for 8-10 min.

7. The wafer processing method of claim 5, wherein, The method further comprises: cleaning the wafer with an HNO3 solvent with a temperature of 20-25°C and a concentration of 0.4-0.5% for 20-30 s.

8. The wafer processing method of claim 5, wherein, The method further comprises: cleaning the wafer with an SC-1 solvent with a temperature of 70-75°C for 8-10 min.

9. A wafer processing apparatus, characterized by comprising: The method comprises: a coating mechanism configured to coat photoresist on a wafer to be processed, and irradiate the surface of the wafer with ultraviolet light at a specific polarization angle, so that the area of the wafer surface where the protrusions are located receives light intensity greater than the other areas of the wafer; a developing mechanism configured to develop the photoresist to form photoresist openings that expose the protrusions; an oxidation and etching mechanism configured to oxidize the protrusions through the photoresist openings and remove the oxidized protrusions through an etching process.

10. An electronic device comprising a memory, a processor, and a computer program stored on the memory and executable on the processor; characterized in that, The processor implements the wafer processing method of any one of claims 1-8 when executing the program.

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