Substrate support

Abstract

A substrate support (1) configured to support a substrate. The substrate support includes a body (10) having a first side configured to support a substrate and a second side opposite the first side. A plurality of grooves are formed in the second side. The plurality of grooves includes a plurality of channels (50) and a plurality of conduits (60). The plurality of channels includes a first channel (51) and a second channel (52) substantially surrounding the first channel. The plurality of conduits includes at least one first conduit (61) and at least one second conduit (62). The first channel is in fluid communication with the at least one first conduit and the at least one first conduit extends toward a periphery of the substrate support, and the second channel is in fluid communication with the at least one second conduit and the at least one second conduit extends toward the periphery of the substrate support.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to EP application 23187490.0, filed on July 25, 2023, which is incorporated herein by reference in its entirety. Technical Field

[0003] The present invention relates to a substrate support configured to support a substrate, a substrate support system including the substrate support, and a measurement system including the substrate support system. Background Technology

[0004] A lithography apparatus is a machine configured to apply a desired pattern onto a substrate. Lithography apparatus can be used, for example, in the manufacture of integrated circuits (ICs). A lithography apparatus can project a pattern (often referred to as a “design layout” or “design”) from a patterning apparatus (e.g., a mask) onto a layer of radiation-sensitive material (resist) disposed on a substrate (e.g., a wafer).

[0005] As semiconductor manufacturing processes have continuously advanced, the size of circuit components has shrunk while the number of functional elements (e.g., transistors) in each device has increased for decades, following a trend commonly known as "Moore's Law." To keep pace with Moore's Law, the semiconductor industry is constantly pursuing technologies capable of manufacturing increasingly smaller features. Photolithography equipment uses electromagnetic radiation to project patterns onto a substrate. The wavelength of this radiation determines the minimum size of the features that can form the pattern on the substrate. Typical wavelengths currently used are 365 nm (i-line), 248 nm, 193 nm, and 13.5 nm.

[0006] The photolithography apparatus may include an illumination system for providing a radiation projection beam and a support structure for supporting a patterning apparatus. The patterning apparatus may be used to impart a pattern to the projection beam in its cross-section. The apparatus may also include a projection system for projecting the patterned beam onto a target portion of a substrate.

[0007] In a photolithography apparatus, a substrate to be exposed (which may be referred to as a product substrate) can be held on a substrate support (sometimes called a wafer stage). The substrate support can be supported on a platform. The substrate support includes a substrate-facing surface of a body and a platform-facing surface opposite to the substrate-facing surface. Grooves can be formed in the platform-facing surface of the substrate support body. Fluid flow through the grooves can be used to provide negative pressure, for example, making the grooves act as vacuum channels that help hold the substrate support to the platform. Multiple through-holes can be present in the grooves, extending to the substrate-facing side of the substrate support. The multiple through-holes allow the flow to provide negative pressure to help hold the substrate to the substrate support.

[0008] There is a need for more efficient and effective substrate attachment to substrate supports. In particular, warped substrates may be difficult to attach to substrate supports. This can lead to the need for high flow rates (or fluid flows) and pressure to hold the substrate in place, and may result in higher stress and damage to the substrate. Summary of the Invention

[0009] The object of the present invention is to provide a substrate support configured to support a substrate.

[0010] According to the present invention, a substrate support configured to support a substrate is provided. The substrate support includes a body having a first side configured to support the substrate and a second side opposite to the first side. A plurality of grooves are formed on the second side. The plurality of grooves include a plurality of channels and a plurality of conduits. The plurality of channels include a first channel and a second channel generally surrounding the first channel. The plurality of conduits include at least one first conduit and at least one second conduit. The first channel is in fluid communication with at least one first conduit, and at least one first conduit extends toward the periphery of the substrate support; the second channel is in fluid communication with at least one second conduit, and at least one second conduit extends toward the periphery of the substrate support.

[0011] According to another aspect of the invention, a substrate support configured to support a substrate is provided. The substrate support includes a body having a first side configured to support the substrate and a second side opposite to the first side. The body defines a plurality of through holes and a plurality of inlets. Each through hole extends from the second side to the first side. The plurality of inlets are for connection to one or more positive pressure sources and / or negative pressure sources. Each through hole is in fluid communication with at least one of the plurality of inlets. One or more through holes are in fluid communication with a corresponding check valve, the corresponding check valve being configured to: restrict fluid flow through the corresponding through hole when the check valve is in a closed state, and allow fluid flow through the corresponding through hole when the check valve is in an open state. The check valve is configured to: change from a closed state to an open state when the pressure difference between a first pressure located upstream of the check valve in the fluid flow direction and a second pressure located downstream of the check valve in the fluid flow direction is reduced to below a predetermined opening pressure difference threshold.

[0012] According to the present invention, a substrate support system including a substrate support member is also provided.

[0013] According to the present invention, a measurement system including a substrate support system is also provided.

[0014] Other embodiments, features, and advantages of the present invention will now be described in detail with reference to the accompanying drawings, as well as the structure and operation of various embodiments of the present invention, including the features and advantages of each embodiment. Attached Figure Description

[0015] Embodiments of the invention will now be described by way of example only with reference to the illustrative drawings, wherein corresponding reference numerals denote corresponding parts, and wherein:

[0016] Figure 1 An overview diagram of the photolithography equipment is schematically depicted;

[0017] Figure 2 A plan view of the substrate support is depicted;

[0018] Figure 3 Described Figure 2 A cross-sectional view of the substrate support;

[0019] Figure 4 A view depicting a second side of a substrate support including multiple recesses, the multiple recesses including a first channel surrounded by a second channel and multiple conduits, each conduit extending between one channel of the channel and the periphery of the substrate support;

[0020] Figure 5 A view depicting the second side of the substrate support, including multiple additional channels and corresponding conduits;

[0021] Figure 6 A view depicting the second side of a substrate support having multiple clamping areas associated with multiple grooves;

[0022] Figure 7 Depicting Figure 6 A view of the first side of the substrate support;

[0023] Figure 8 Depicting crossing Figure 6 and Figure 7 A cross-sectional view of the substrate support;

[0024] Figure 9A A view of a first side of a substrate support having multiple sealing structures defining multiple clamping areas located on the first side of the substrate support is described.

[0025] Figure 9B A view depicting a first side of a substrate support having multiple sealing structures defining multiple clamping areas circumferentially distributed around the first side of the substrate support is shown.

[0026] Figure 10 A cross-sectional view through a substrate support is described, the substrate support having different bottom planes in different clamping areas located on the first side of the substrate support;

[0027] Figures 11A to 11CAn alternative arrangement of the raised region located on the first side of the substrate support in the region surrounding the loading pin hole is described;

[0028] Figure 12A A cross-sectional view through a substrate support is depicted, the substrate support including a body defining a plurality of through holes;

[0029] Figure 12B Depicting crossing Figure 12A A cross-sectional view of a substrate, which also includes a check valve for limiting flow through the corresponding through-hole;

[0030] Figure 13 A cross-sectional view is depicted, showing the bending torque applied to the warped substrate through a sample support including multiple check valves;

[0031] Figure 14A A check valve in a closed state (configured to restrict fluid flow) is depicted;

[0032] Figure 14B Depicting an open state (configured to allow fluid flow) Figure 14A The check valve.

[0033] The features shown in the figures are not necessarily drawn to scale, and the dimensions and / or arrangements depicted are not limiting. It will be understood that the figures include optional features that may not be important to the invention. Furthermore, not all features of the substrate support are depicted in every figure, and these figures may show only some of the parts relevant to describing a particular feature. Detailed Implementation

[0034] In this document, the terms “radiation” and “beam” are used to cover all types of electromagnetic radiation, including ultraviolet radiation (e.g., having wavelengths of 436 nm, 405 nm, 365 nm, 248 nm, 193 nm, 157 nm, 126 nm, or 13.5 nm).

[0035] As used herein, the terms "mask," "mask," or "patterning apparatus" can be broadly interpreted to refer to a general patterning apparatus that can be used to impart a patterned cross-section to an incident radiation beam corresponding to a pattern to be created in a target portion of a substrate. In this context, the term "optical valve" may also be used. Examples of other such patterning apparatuses besides conventional masks (transmissive or reflective, binary, phase-shifting, hybrid, etc.) include programmable mirror arrays and programmable LCD arrays.

[0036] Figure 1A lithography apparatus LA is schematically depicted. The lithography apparatus includes: an irradiation system (also called an irradiator) IL configured to modulate a radiation beam B (e.g., EUV or DUV radiation); a mask support (e.g., a mask stage) MT configured to support a patterning apparatus (e.g., a mask) MA and connected to a first positioner PM configured to precisely position the patterning apparatus MA according to certain parameters; a substrate support (e.g., a substrate stage or substrate support) WT configured to hold a substrate (e.g., a wafer coated with resist) W and connected to a second positioner PW configured to precisely position the substrate support WT according to certain parameters; and a projection system (e.g., a refractive projection lens system) PS configured to project a pattern imparted by the radiation beam B by the patterning apparatus MA onto a target portion C (e.g., comprising one or more dies) of the substrate W.

[0037] In operation, the irradiation system IL receives a radiation beam B from a radiation source SO, for example, via a beam delivery system BD. The irradiation system IL may include various types of optical components for guiding, shaping, and / or controlling the radiation. These various types of optical components are, for example, refractive, reflective, magnetic, electromagnetic, electrostatic, and / or other types of optical components, or any combination of said refractive, reflective, magnetic, electromagnetic, electrostatic, and / or other types of optical components. The irradiator IL can be used to adjust the radiation beam B to have a desired spatial and angular intensity distribution in the cross-section of the radiation beam B at the plane of the pattern forming apparatus MA.

[0038] The term "projection system" PS as used herein should be interpreted broadly to encompass all types of projection systems, including refractive, reflective, reflective-refractive, distorting, magnetic, electromagnetic, and / or electrostatic optical systems, or any combination of such refractive, reflective, reflective-refractive, distorting, magnetic, electromagnetic, and / or electrostatic optical systems, as suitable for the exposure radiation used, and / or for other factors such as the use of immersion liquids or vacuum. Any use of the term "projection lens" herein may be considered synonymous with the more general term "projection system" PS.

[0039] Photolithography apparatus can be of a type in which at least a portion of the substrate W can be covered by an immersion liquid (e.g., water) having a relatively high refractive index to fill the immersion space between the projection system PS and the substrate W—this is also known as immersion lithography. Further information on immersion techniques is given in US 6,952,253, which is incorporated herein by reference.

[0040] Photolithography equipment can be of the type having two or more substrate supports WT (also known as "dual platforms"). In such a "multi-platform" machine, substrate supports WT can be used in parallel, and / or while preparing a substrate W for subsequent exposure of the substrate W is performed on a substrate W located on one of the substrate supports WT, another substrate W located on another substrate support WT is used to expose a pattern located on the other substrate W.

[0041] In addition to the substrate support WT, the lithography equipment may include a measurement platform ( Figure 1 (Not shown in the image). The measurement platform is arranged to hold sensors and / or cleaning devices. The sensors may be arranged to measure characteristics of the projection system PS or the radiation beam B. The measurement platform may hold multiple sensors. The cleaning devices may be arranged as part of a cleaning lithography apparatus, such as part of the projection system PS or part of a system providing immersion liquid. The measurement platform may move below the projection system PS as the substrate support WT moves away from the projection system PS.

[0042] In operation, a radiation beam B is incident on a pattern forming apparatus (e.g., a mask) MA held on a mask support MT and patterned by a pattern (design layout) present on the pattern forming apparatus MA. After passing through the mask MA, the radiation beam B is focused onto a target portion C of the substrate W by a projection system PS. The substrate support WT can be precisely moved by means of a second positioner PW and a position measurement system PMS, for example, to position different target portions C in the path of the radiation beam B at focused and aligned locations. Similarly, a first positioner PM and possibly another position sensor ( Figure 1 (Another position sensor, not explicitly depicted, can be used to precisely position the pattern forming apparatus MA relative to the path of the radiation beam B. The pattern forming apparatus MA and the substrate W can be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks P1, P2 in the illustration occupy dedicated target portions, they can be located in the space between the target portions. When the substrate alignment marks P1, P2 are located between the target portions C, they are referred to as scribing alignment marks.)

[0043] In this specification, a Cartesian coordinate system is used. A Cartesian coordinate system has three axes: the x-axis, the y-axis, and the z-axis. Each of the three axes is orthogonal to the other two axes. A rotation about the x-axis is called an Rx rotation. A rotation about the y-axis is called an Ry rotation. A rotation about the z-axis is called an Rz rotation. The x-axis and y-axis define the horizontal plane, while the z-axis is in the vertical direction. The Cartesian coordinate system is not limiting of the invention but is used for illustration only. Instead, another coordinate system, such as a cylindrical coordinate system, can be used to illustrate the invention. The orientation of the Cartesian coordinate system can be different, for example, such that the z-axis has a component along the horizontal plane.

[0044] In photolithography equipment, it is necessary to position the upper surface of the substrate to be exposed with high precision within the optimal focal plane of the spatial image of the pattern projected by the projection system. To achieve this, the substrate can be held on a substrate support. The surface of the substrate support can be provided with multiple protrusions, the distal ends of which can be coplanar in the nominal support plane. Although there are many protrusions, the cross-sectional area of ​​the protrusions parallel to the support plane can be very small, such that the total cross-sectional area of ​​the distal ends of the protrusions is a few percent of the surface area of ​​the substrate, for example, less than 5%. The gas pressure in the space between the substrate support and the substrate can be reduced relative to the pressure above the substrate to generate a force that clamps the substrate to the substrate support.

[0045] Figure 2 The figure shows a plan view of the substrate support 1. Figure 3 The image describes a partial cross-section of the substrate support 1. The substrate support 1 may include a body 10 having an upper surface 11. The body 10 may form most of the substrate support 1. When... Figure 3 When positioned as shown, the upper surface 11 can be the top surface of the main body 10, that is, the upper surface 11 can be the top surface in the Z direction (vertical direction).

[0046] The substrate support 1 may include a plurality of protrusions (or projections) 20 connected to and projecting from the upper surface 11 of the body 10. Optionally, the substrate support 1 may include a plurality of protrusions (or projections) 20 connected to and projecting from the lower surface (opposite to the upper surface 11) of the body 10. The plurality of protrusions 20 may have a proximal end 21 and a distal end 22, the proximal end 21 being located near the body 10 when in place. The distal end 22 may be located at the end of the plurality of protrusions 20 opposite to the proximal end 21. That is, the distal end 22 may be located at the end of the protrusion 20 remote from the body 10.

[0047] The plurality of process segments 20 may have a central longitudinal axis 23, with a proximal end 21 at one end of the process segment 20 along the central longitudinal axis 23 and a distal end 22 at the other end of the process segment 20 along the central longitudinal axis 23. Thus, each of the plurality of process segments 20 may have a central longitudinal axis 23 from the proximal end 21 to the distal end 22.

[0048] The distal ends 22 of the plurality of protrusions 20 form a support plane for the substrate W. Specifically, the distal ends 22 of the plurality of protrusions 20 can support the lower surface 31 of the substrate W. The upper surface 32 of the substrate W can be a surface opposite to the lower surface 31. The upper surface 32 can be a surface configured to receive the radiation beam B.

[0049] The support plane can be formed in a generally flat plane. Therefore, the substrate W can be positioned on the support plane so that it is also generally flat, which can reduce the error (i.e., defect rate) in the pattern printed on the substrate W.

[0050] like Figure 3 As shown, the plurality of protrusions 20 may be generally truncated conical, i.e., truncated cone, or may be conical. Alternatively, the plurality of protrusions 20 may be generally cylindrical. The truncated conical protrusions 20 may be more robust than the cylindrical protrusions 20 and therefore have a lower probability of breakage. Preferably, the plurality of protrusions 20 have the same shape as each other.

[0051] The plurality of protrusions 20 may be attached to the upper surface 11 of the body 10 in any suitable manner. The plurality of protrusions 20 may be separate components attached to the upper surface 11 of the body 10. Alternatively, the plurality of protrusions 20 may be integrally formed with the body 10. In other words, the plurality of protrusions 20 may be formed as protrusions from the upper surface 11 of the body 10, that is, the plurality of protrusions 20 may be formed as a single component with the body 10.

[0052] The substrate support 1 can be configured such that fluid can be drawn from between the substrate W supported on the support plane and the upper surface 11. Fluid at the edge of the substrate W can be drawn from below the substrate W. When the fluid is drawn, the pressure below the substrate W is reduced relative to the pressure above the substrate W, and the edge of the substrate W will descend toward the substrate support 1. The substrate W can be clamped by drawing fluid from the space below the substrate W to provide reduced relative pressure in the space between the substrate support 1 and the substrate W.

[0053] The body 10 may include at least one extraction opening 12 through which fluid is extracted. There may be multiple extraction openings 12.

[0054] When the substrate W is clamped, it is beneficial to reduce fluid leakage into the space between the substrate W and the body 10. Therefore, providing a physical boundary near the edge of the substrate support 1 may be advantageous. The physical boundary can be as follows: Figure 2 and 3 The edge facing the body 10 is shown. The physical boundary can be formed by a sealing member 40. The sealing member 40 can be a wall-shaped protrusion formed around the edge of the body 10, such as a wall-shaped protrusion formed around the periphery of the body 10. The sealing member 40 can be formed to provide a seal between the substrate support 1 and the underside of the substrate W (e.g., the lower surface 31) and the edge of the substrate W. The seal provided by the sealing member 40 does not have to be a complete seal, but can be a partial seal that reduces but does not eliminate fluid flow into the space between the substrate support 1 and the substrate W.

[0055] The sealing member 40 may surround a plurality of protrusions 20, and the sealing member 40 may protrude from the upper surface 11 of the body 10. The sealing member 40 may be connected to the body 10 in any manner. The sealing member 40 may be integral with the body 10.

[0056] A pressure sensor (not shown) can be used to measure the pressure between the substrate W and the upper surface 11 of the body 10. Various sensors for measuring pressure in the space below the substrate W are known. For example, the pressure sensor disclosed in WO2017 / 137129A1 provides examples of suitable pressure sensors that can be used, WO2017 / 137129A1 being incorporated herein by reference in its entirety.

[0057] A flow rate sensor (not shown) can be used to measure the flow rate of fluid drawn through the extraction opening 12. Various sensors for measuring the flow rate from the space below the substrate W are known.

[0058] For the purposes of this invention, the exact arrangement of the substrate support 1 is not particularly limited. For example, the exact arrangement of the protrusions 20, the sealing member 40, and the extraction opening 12 in the substrate support 1 is not particularly limited.

[0059] Figures 4 to 10 The diagram illustrates the arrangement of a substrate support 1 configured to support a substrate W. The substrate support 1 includes a body 10 having a first side configured to support the substrate W. The body 10 of the substrate support 1 also includes a second side opposite to the first side. Figures 4 to 6A view is provided showing the second side of the substrate support 1 according to different arrangements. In one configuration, the first side may be the top side of the substrate support 1, and the second side may be the bottom side of the substrate support 1. In this configuration, the first side is the top side, and the substrate W can rest on the substrate support 1 due to gravity. However, alternative arrangements are possible where the substrate support 1 is tilted such that the first side is not directly above the second side. Such alternative arrangements may include protrusions, such as nodes, and / or retaining arms located on the first side of the substrate support 1 to help hold the substrate W in place.

[0060] like Figures 4 to 6 As shown, a plurality of grooves are formed on the second side of the substrate support 1. The grooves are ideally configured to apply negative and / or positive pressure to the substrate support 1. When a vacuum source is in fluid communication with the grooves, the grooves can be referred to as vacuum channels. Negative pressure can be applied to the grooves, for example, to help secure the substrate support 1 to a platform (not shown) on which it is mounted. Alternatively or additionally, negative pressure can be applied through the grooves, for example, to help secure the substrate W to the first side of the substrate support 1. Similarly, positive pressure can be applied by introducing fluid flow through the grooves to help remove the substrate W from the substrate support 1.

[0061] It is desirable that the grooves be arranged to achieve the desired pressure in different regions, for example, between the supported substrate W and the first side of the substrate support 1. In particular, especially for a warped substrate W, it is desirable to first fix one region of the substrate W and then fix another region. This can help achieve a flat, uniform surface for inspection of the substrate W, and / or fix the substrate W while reducing stress on it. For example, in the case of a bowl-shaped substrate W, it is desirable to first apply negative pressure to fix the center or lowest point of the substrate W before applying negative pressure to the radially outward region of the substrate W, so as to gradually achieve the desired pressure distribution across the entire substrate W and potentially gradually flatten the substrate W. In this way, the substrate W can be effectively fixed without unnecessarily wasting flow or volume in regions of the substrate W (in the Z direction) that are too far from the substrate support 1 to be meaningfully affected by the flow through the grooves (e.g., the radially outward region of a bowl-shaped warped substrate). Furthermore, the substrate W can be fixed without being subjected to excessive stress. Alternatively or additionally, the grooves can be arranged to effectively hold substrates W of different sizes without wasting flow or volume in areas of the substrate support 1 that do not correspond to the smaller substrate.

[0062] exist Figures 4 to 10In the arrangement shown, the plurality of grooves include a plurality of channels 50 and a plurality of conduits 60, the plurality of channels 50 including a first channel 51 and a second channel 52. The plurality of conduits 60 include at least one first conduit 61 and at least one second conduit 62. The first channel 51 is in fluid communication with at least one first conduit 61. In other words, flow for providing positive or negative pressure can be provided through the first conduit 61 and the first channel 51. Optionally, the first channel 51 and at least one first conduit 61 can form a continuous groove in the second side of the substrate support 1. The second channel 52 is in fluid communication with at least one second conduit 62. Optionally, the second channel 52 and at least one second conduit 62 can form a continuous groove in the second side of the substrate support 1. In this way, the flow provided through any of the conduits 61, 62 is provided to the corresponding channel 51, 52 in fluid communication with the conduits 61, 62. In this way, the channels 51, 52 can be shaped as needed to achieve a desired pressure distribution across the entire substrate W, and the conduits 61, 62 can be used as supply grooves to enable flow into / from the channels 51, 52.

[0063] The second channel 52 generally surrounds the first channel 51. In other words, the second channel 52 extends around the first channel 51. Thus, the first channel 51 can be used to fix the center of the substrate W to the substrate support 1, and the second channel 52 can be used to fix the radially outward region of the substrate W to the substrate support 1. The second channel 52 can extend around the first channel 51 by at least 90°. Desiredly, the second channel 52 extends around the first channel 51 by at least 180°, more desiredly at least 200°, even more desiredly at least 225°, even more desiredly at least 270°, and even more desiredly at least 315°.

[0064] One or more (optionally all) of the plurality of conduits 60 extend from the respective channels 51, 52 toward the periphery of the substrate support 1. For example, in Figures 4 to 6 In the arrangement, at least one first conduit 61 and at least one second conduit 62 extend toward the periphery of the substrate support 1. Desirably, at least one first conduit 61 and at least one second conduit 62 extend to a radially outward position on the substrate support 1 located in the radially outermost channel of the plurality of channels 50. Optionally, one or more of the plurality of conduits 60 extend to an outer region in the radially outermost half of the substrate support 1. Desirably, the outer region is located in the radially outermost third portion of the substrate support 1. More desirably, the outer region is located in the outermost quarter portion of the substrate support 1. Even more desirably, the outer region is located in the outermost fifth portion of the substrate support 1.

[0065] The second channel 52 is expected to extend less than 360° around the first channel 51. For example, the second channel 52 may extend less than or equal to 315° around the first channel 51. In other words, for example... Figures 4 to 6 As shown, the second channel 52 may have an interruption 5 formed in the circular direction of the substrate support 1. The interruption 5 may form a cut-out region on the second side of the substrate support 1. This cut-out region is the area through which the second channel 52 does not extend on the second side, and may optionally be fan-shaped. At least one first conduit 61 may extend through the cut-out region. In other words, the interruption 5 in the second channel 52 allows at least one first conduit 61 to extend from the first channel 51 toward the periphery of the second side of the substrate support 1 without at least one first conduit 61 traversing the second channel 52.

[0066] In addition to the first channel 51 and the second channel 52, the plurality of channels 50 may optionally include at least one additional channel 53 to 56. Figure 5 In the arrangement, at least one additional channel comprises four additional channels 53 to 56. In an alternative arrangement, at least one additional channel may consist of two or three channels. One or more of the at least one additional channel 53 to 56 and the second channel 52 may optionally be concentric with each other, such as... Figure 5 As shown in the diagram. Additional channels 53 to 56 allow more areas of the substrate W to be selectively attached to the substrate support 1.

[0067] like Figure 5 As shown, at least one additional channel 53 to 56 surrounds the second channel 52; in other words, each additional channel 53 to 56 is disposed radially outside the second channel 52. For example, a first additional channel 53 is disposed radially outside the second channel 52. Each additional channel 53 to 56 may optionally be disposed radially outside the preceding channel. As the number of additional channels increases, the extent to which each channel surrounds an adjacent radially inward channel can be reduced. In other words, the cut-out area for the additional channels 53 to 56 can be a larger fan-shaped area than the cut-out area of ​​the second channel 52. In applications where it is desirable to control the pressure in discrete regions of the substrate W when the substrate W is fixed to the substrate support 1, the reduced length or range of the additional channels 53 to 56 in the circumferential direction can be desirable. For example, it can be desirable to control the timing and / or magnitude of positive or negative pressure applied to the substrate W at different circumferential positions or fan-shaped portions of the substrate W. Furthermore, shorter grooves may be less prone to leakage than longer grooves, meaning that shorter grooves may be less likely to unnecessarily lose pressure through leakage.

[0068] exist Figures 4 to 6In the arrangement, the innermost channel of the first channel 51 or multiple channels 50 can take any shape. In other words, the shape of the first channel 51 can be selected based on the application, such as based on the expected warpage of the substrate W to be fixed. The second channel 52 has a shape that generally surrounds the first channel 51. For example, the second channel 52 can have a generally square, hexagonal, star-shaped, elliptical, or irregular shape. The first channel 51 and / or the second channel 52 may optionally have a generally arcuate shape, for example... Figures 4 to 6 As shown. For example, one or more of the multiple channels 50, channels 51 to 56, may have a generally arcuate shape. In other words, one or more of the multiple channels 50, channels 51 to 56, may have an incomplete circular shape. Figures 4 to 6 In the arrangement, the first channel 51 and the second channel 52 are concentric with each other. Alternatively, all channels 51 to 56 of the plurality of channels 50 may be concentric with each other. For example, if the substrate W is expected to be warped, such that the substrate W has a bowl-shaped shape, then it is expected that the second channel 52 and any other channels 53 to 56 have a concentric arc shape to promote a more uniform pressure distribution around the substrate W.

[0069] exist Figure 4 and Figure 5 In this arrangement, each of the plurality of pipes 60, 61 to 66, is straight and extends radially. Specifically, the first conduit 61 extends radially, and the second conduit 62 extends radially. The first conduit 61 and the second conduit 62 form a non-zero angle. In other words, the first conduit 61 extends in a different direction than the second conduit 62. In an alternative arrangement, one or more of the plurality of pipes 60, 61, 62, may not be straight and / or may not extend radially. For example, as... Figure 6 As shown, each of the conduits 61 and 62 extends in a non-radial direction. In another configuration, one or more of the plurality of conduits 60, conduits 61 to 66, may follow a curved path between the respective channels 51 to 56 and the periphery of the substrate support 1. For example, this can be advantageous in providing conduits 61 to 66 for connecting the respective channels 51 to 56 to the periphery of the substrate support 1 while reducing the size of the cut-out area or discontinuity 5.

[0070] The substrate support 1 may include multiple inlets 70, for example Figures 4 to 6 The inlets shown are examples of those inlets. Each of the plurality of inlets 70 is preferably adapted to connect to one or more positive and / or negative pressure sources. The negative pressure source may be a vacuum source configured to generate a vacuum within the plurality of recesses when the recesses are in fluid communication with the vacuum source via one or more of the inlets 70. Figures 4 to 6As shown, it is desirable that each of the plurality of conduits 60, 61 to 66, is in fluid communication with one inlet of the plurality of inlets 70. Thus, the channel 50 can be in fluid communication with the inlet 70 via its respective conduit 60. Each of the plurality of inlets 70 is configured to face the periphery of the substrate support 1. In other words, one or more of the plurality of inlets 70, and desirably all of the inlets 70, can be located in the outer region into which the conduits 61 to 66 extend.

[0071] exist Figure 4 and Figure 6 In this arrangement, at least one first catheter 61 includes a plurality of catheters. In this example, at least one first catheter 61 includes two catheters. Figure 4 and Figure 6 In the arrangement, at least one second catheter 62 includes a plurality of catheters. In these examples, at least one second catheter 62 includes two catheters.

[0072] Expectedly, as Figures 4 to 6 As shown, each of the plurality of catheters 60, 61 to 66, is in fluid communication with one of the plurality of channels 50, 51 to 56, and preferably only with one channel 51 to 56. For example, in Figures 4 to 6 In this arrangement, each of at least one first conduit 61 is in fluid communication with a first channel 51, and each of at least one second conduit 62 is in fluid communication with a second channel 52. Thus, each of the plurality of inlets 70 may be in fluid communication with a corresponding channel 51 to 56 of the plurality of channels 50, preferably only with one corresponding channel 51 to 56. Desiredly, at least one inlet 70 of the plurality of inlets 70 may be connected to a negative pressure source to secure the substrate support 1 to a platform on which the substrate support 1 is mounted. Each of the plurality of channels 50, 51 to 56, is in fluid communication with at least one inlet 70 of the plurality of inlets 70 via at least one conduit 61 to 66 of the plurality of conduits 60, as... Figures 4 to 6 As shown. Alternatively, as... Figure 4 and Figure 6 As shown, each of the multiple channels 50, 51 to 56, is in fluid communication with more than one of the multiple inlets 70.

[0073] exist Figures 4 to 8 and Figure 10In the arrangement, multiple grooves may be associated with at least one through-hole 12. The at least one through-hole 12 extends from a corresponding groove located on a second side of the body 10 of the substrate support 1 to a first side of the body 10. One or more of the multiple channels 50, channels 51 to 56, and each channel 51 to 56, desirably includes at least one through-hole 12. For example, each of the first channel 51 and the second channel 52 may include at least one through-hole 12. Alternatively, each of the first conduit 61 and the second conduit 62 may also include at least one through-hole 12. The at least one through-hole 12 includes multiple through-holes 12. The multiple through-holes 12 may be evenly distributed along the grooves. Alternatively, the through-holes 12 may be more densely concentrated in certain areas along the length of the groove, depending on the application. Similarly, the size and / or cross-sectional shape of the through-holes 12 can be selected according to the application. The through-holes 12 may be configured to function in conjunction with the multiple grooves as vacuum channels. In other words, when negative pressure is supplied through one or more inlets 70, this negative pressure can help secure the substrate W to the substrate support 1 via the through-holes 12 in the groove. Similarly, when positive pressure is supplied through one or more inlets 70, this positive pressure can help force the substrate W away from the substrate support 1 via the through-holes 12 in the groove.

[0074] The plurality of grooves comprising multiple channels 50 and multiple conduits 60 may all be grooves having the same depth, width, and cross-sectional shape. Alternatively, the channels 50 may have a different depth and / or width and / or cross-sectional shape than the conduits 60. In some arrangements, the depth and / or width and / or cross-sectional shape of each channel 51 to 56 of the plurality of channels 50 may be the same. In other arrangements, the different channels 51 to 56 of the plurality of channels 50 may have different depths and / or widths and / or cross-sectional shapes. In some arrangements, the depth and / or width and / or cross-sectional shape of each conduit 61 to 66 of the plurality of conduits 60 may be the same. In other arrangements, the different conduits 61 to 66 of the plurality of conduits 60 may have different depths and / or widths and / or cross-sectional shapes.

[0075] Multiple channels 50 on the second side are associated with multiple corresponding clamping areas 510, 520, for example, Figure 6 ( Figure 6 As shown in the view depicting the second side of the arrangement. Each clamping area 510, 520 preferably corresponds to one or more corresponding recesses. One or more corresponding recesses preferably include channels 51, 52. Figure 6 As shown in the arrangement, one or more corresponding grooves may include conduits 61, 62. For example, as Figure 6As shown, the first clamping region 510 on the second side may include a first channel 51 and a first conduit 61, and optionally also includes at least one inlet 70 connected to the first conduit 61. Similarly, the second clamping region 520 on the second side may include a second channel 52 and a second conduit 62, and optionally also includes at least one inlet 70 connected to the second conduit 62. Thus, each flow path between the inlet 70 and the corresponding channel 51, 52 may correspond to a clamping region 510, 520. In an arrangement having at least one additional channel 53 to 56, one or more clamping regions may correspond to two or more of the respective channels 51 to 56 of the plurality of channels 50. Each clamping region 510, 520 on the second side is desirably individually controllable to increase or decrease the pressure in the clamping regions 510, 520 located on the second side of the substrate support 1. It is desirable that the clamping regions 510 and 520 are controllable, allowing different amounts of pressure to be applied to different clamping regions 510 and 520, and / or that the clamping regions 510 and 520 can be activated at different times. This control can have the benefit of effectively and efficiently securing the substrate support 1 on the second side to the platform on which the substrate support 1 is mounted. Furthermore, if desired, negative pressure can be applied to different clamping regions 510 and 520 simultaneously while positive pressure is applied to one clamping region 510 and 520.

[0076] In such Figures 4 to 7 In the arrangement, each of the multiple channels 50, 51 to 56, can be in fluid communication with one of the multiple inlets 70 via one or more of the multiple conduits 60. Each inlet 70 can be individually connected to a corresponding dedicated negative pressure source and / or dedicated positive pressure source, such that activation of the pressure source results in a pressure change in the corresponding clamping zones 510, 520. Alternatively, the negative pressure source and / or positive pressure source can be shared among the multiple inlets 70, and multiple valves (not shown) can be provided to individually control the input and output of each inlet 70. In this way, the pressure applied to each clamping zone 510, 520 can be individually controlled by controlling the negative pressure source and / or positive pressure source and / or valves.

[0077] The substrate support 1 may be part of a substrate support system. The substrate support system may include a platform configured to support the substrate support 1. Optionally, the substrate support system may include one or more controllers (not shown) configured to individually control each clamping region 510, 520. The one or more controllers are desirably configured to activate the corresponding clamping region 510, 520 to change the pressure in the region corresponding to the corresponding clamping region 510, 520 on the second side and optionally also on the first side. The one or more controllers may include multiple controllers. Each of the multiple controllers is configured to control the corresponding clamping region 510, 520. Alternatively, one of the one or more controllers may be configured to individually control multiple clamping regions 510, 520.

[0078] One or more controllers may be configured to control multiple positive and / or negative pressure supply sources that are in fluid communication with multiple channels 50 via multiple conduits 60. In this arrangement, each positive and / or negative pressure supply source is in fluid communication with one of the multiple channels 50 via at least one of the multiple conduits 60. Alternatively or additionally, one or more controllers may be configured to control multiple valves that are in fluid communication with the multiple channels 50 via the multiple conduits 60. In this arrangement, each positive and / or negative pressure supply source may be in fluid communication with two or more of the multiple channels 50 via the multiple conduits 60, and individual control of those clamping areas 510, 520 may be provided by control valves.

[0079] The corresponding clamping regions 510, 520, 610, and 620 located on the first and second sides of the substrate support 1 can be activated simultaneously. For example, since the first clamping regions 510 and 610 located on both the first and second sides correspond to the first channel 51, the first clamping region 510 on the second side will be activated simultaneously with the activation of the first clamping region 610 on the first side. In particular, the plurality of through holes 12 (refer to...) Figure 3The clamping regions 510 and 620 on the second side can extend from one or more of the grooves, for example from each of the channels 50 in the clamping regions 510 and 520 on the second side, to the corresponding clamping regions 610 and 620 on the first side. In other words, both the first clamping region 510 on the second side and the first clamping region 610 on the first side can be activated by providing flow through the first channel 51 and thus through the plurality of through holes 12 extending from the first channel 51 to the first side of the body 10 of the substrate support 1. Similarly, both the second clamping region 520 on the second side and the second clamping region 620 on the first side can be activated by providing flow through the second channel 52 and thus through the plurality of through holes 12 extending from the second channel 52 to the first side of the body 10 of the substrate support 1. The pressure in one or more clamping regions 510 and 520 on the second side may not be equal to the pressure in the corresponding one or more clamping regions 610 and 620 on the first side. The pressure in each clamping region 510, 520, 610, 620 can depend on several factors, including the size, number, and distribution of the through-holes 12, and other geometric features of the substrate support 1 and / or the substrate W. Therefore, individually controlling the activation of the clamping regions 510, 520 on the second side results in control of the activation of the corresponding clamping regions 610, 620 on the first side. This control can be advantageously used to provide effective and efficient fixation of the substrate W on the first side of the substrate support 1. In other words, the first clamping regions 510, 610 located on both the first and second sides can be activated simultaneously, such that the corresponding clamping regions on the first and second sides (e.g., the first clamping regions 510, 610 on the first and second sides) are jointly controlled. In an alternative arrangement, one or more second-side clamping regions (not shown) can be defined on the second side of the substrate support 1. Each second-side clamping region may include only a recess in which the through-holes 12 are not defined. In other words, there may be one or more clamping areas on the second side that are not in fluid communication with the corresponding clamping areas 610, 620 on the first side. These second-side clamping areas can be used to help secure the substrate support 1 to the platform on which the substrate support 1 is mounted.

[0080] One or more controllers can be configured to sequentially activate clamping areas 510, 520. In other words, one or more controllers can be configured to activate one clamping area, such as the first clamping area 510. Then, one or more controllers can be configured to activate another clamping area, such as the second clamping area 520, at a certain time period after the activation of the first clamping area. While the other clamping area is activated, the first clamping area can optionally remain activated. In other words, negative pressure can be applied to the first clamping area 510, and then, after a certain time period, negative pressure can also be applied to the second clamping area 520.

[0081] Alternatively or additionally, one or more controllers may be configured to activate clamping areas 510, 520 based on a specific pressure. This specific pressure may include the total pressure across all clamping areas 510, 520. Alternatively, the specific pressure may include the total pressure across the entire clamping areas 510, 520 on the second side or across the entire clamping areas 610, 620 on the first side. Preferably, the specific pressure may be individually included within each of the clamping areas 510, 520. In other words, the specific pressure may vary between different clamping areas 510, 520. In this arrangement, one or more pressure sensors (not shown) may be provided to measure the pressure in each clamping area 510, 520. One or more controllers may be configured to activate one clamping area and, once the pressure in one clamping area exceeds a predetermined pressure threshold, activate another clamping area among the plurality of clamping areas 510, 520. For example, one or more controllers can be configured to activate a first clamping zone 510, and once the pressure in the first clamping zone 510 exceeds a predetermined pressure threshold, activate a second clamping zone 520 among the multiple clamping zones 510, 520. Figure 6 In this arrangement, the second clamping region 520 is positioned closer to the periphery of the substrate support 1 than the first clamping region 510. This allows each substrate W to be effectively and efficiently secured, even though variations in factors such as warpage and tilt can occur between different substrates W.

[0082] Alternatively or concurrently, one or more controllers may be configured to activate clamping regions 510, 520 based on another parameter. For example, activation may be based on the height of the substrate W above the first side.

[0083] In one embodiment, at least one of the plurality of grooves may optionally be surrounded by sealing structures 421, 422 located on the second side of the substrate support 1. For example, as Figure 6 and Figure 8 As shown, sealing structure 421 can generally surround the first channel 51, and another sealing structure 422 can generally surround the second channel 52. Sealing structures 421 and 422 can be referenced above. Figure 3The sealing member 40 is identical. Sealing structures 421, 422 may define and / or separate clamping areas 510, 520. In other words, the first sealing structure 421 may define a first clamping area 510 on a second side, and the second sealing member 422 may define a second clamping area 520 on a second side. The first clamping area 510 may be associated with or include a first channel 51, a first conduit 61, and a corresponding inlet 70. The second clamping area 520 may be associated with or include a second channel 52, a second conduit 62, and a corresponding inlet 70. The pressure in the area defined by each sealing structure 421, 422 may be individually controllable. In one embodiment, a similar arrangement of sealing structures 421, 422 and clamping areas 510, 520 may be applied. Figure 4 and Figure 5 The example shown.

[0084] The substrate support 1 may include a plurality of second protrusions (not shown) extending from a second side of the substrate support 1. The plurality of second protrusions are preferably configured to support the substrate support 1 on a platform. The distal ends of the plurality of second protrusions preferably define a support plane, which may be a generally flat plane. The plurality of second protrusions may be as shown in the reference above. Figure 3 The plurality of protrusions 20. The sealing structures 421, 422 are intended to have a height less than the height of the plurality of second protrusions.

[0085] Figure 7 Provided orientation Figure 6 The first side view of the substrate support 1 shown. Figure 8 Provided Figure 7 A cross-sectional view of the substrate support 1 through section AA. Figure 7 The arrangement includes multiple clamping areas 610, 620 on the first side. Figure 6 and Figure 7 In the arrangement, each of the clamping areas 610, 620 on the first side has a coverage area that overlaps with at least one clamping area 510, 520 on the second side. Figure 6 and Figure 7 In one arrangement, the first clamping area 510 on the second side has a different area and shape than the first clamping area 610 on the first side, and the second clamping area 520 on the second side has a different area and shape than the second clamping area 620 on the first side. In an alternative arrangement, the area of ​​each clamping area 610, 620 on the first side may correspond to the area of ​​each clamping area 510, 520 on the second side. In other words, the clamping areas 610, 620 on the first side may have the same coverage area as their corresponding clamping areas 510, 520 on the second side. Figure 7In this arrangement, each of the clamping areas 610, 620 on the first side is associated with a channel 51, 52 on the second side. In other words, one or more through holes 12 (refer to...) Figure 3 The channels 51, 52 on the second side extend to corresponding clamping areas 610, 620 on the first side. For example, one or more through holes 12 may extend from the first channel 51 on the second side to the first clamping area 610 on the first side, and one or more through holes 12 may extend from the second channel 52 on the second side to the second clamping area 620 on the first side. In an alternative arrangement, one or more clamping areas 610, 620 on the first side may be associated with a plurality of channels 51, 52 on the second side.

[0086] At least one of the plurality of recesses may optionally be surrounded by sealing structures 411, 412 on the first side, for example as... Figure 7 and Figure 8 As shown. For example, as Figure 7 and Figure 8 As shown, a sealing structure 411 on the first side can generally surround an area corresponding to the coverage area of ​​the first channel 51 on the second side, and another sealing structure 412 on the first side can generally surround an area corresponding to the coverage area of ​​the second channel 52 on the second side. In other words, the sealing structures 411, 412 on the first side can surround a plurality of through holes 12 on the first side, wherein each of the through holes 12 extends from a corresponding groove on the second side to the first side. The first sealing structure 411 is intended to surround the through hole 12 extending to the groove belonging to the first clamping area 510 on the second side, and the second sealing structure 412 is intended to surround the through hole 12 extending to the groove belonging to the second clamping area 520 on the second side. Thus, by surrounding a plurality of through holes 12 on the first side, the sealing structures 411, 412 on the first side surround the corresponding groove. The sealing structures 411, 412 can be compared with those mentioned above. Figure 3 The sealing member 40 is identical. Sealing structures 411, 412 may define and / or separate clamping regions 610, 620. In other words, the pressure in the region defined by each sealing structure 411, 412 may be individually controllable. Sealing structures 411, 412, 421, 422 located on the first and / or second sides may advantageously improve the efficiency of pressure control in the corresponding clamping regions 510, 520, 610, 620, and may reduce the impact of pressure from one clamping region 510, 520, 610, 620 on adjacent clamping regions 510, 520, 610, 620. In one embodiment, a similar arrangement of sealing structures 411, 412, 421, 422 and clamping regions 510, 520, 610, 620 may be applied. Figure 4 and Figure 5 The example shown.

[0087] The substrate support 1 preferably includes a plurality of first protrusions (not shown) extending from a first side of the substrate support 1. The first protrusions may be as referenced above. Figure 3 The protrusion 20. A plurality of first protrusions are preferably configured to support the substrate W. The distal ends of the plurality of first protrusions preferably define a support plane, which may be a generally flat plane. The sealing structures 411, 412 preferably have a height less than the height of the plurality of first protrusions.

[0088] Figure 9A and Figure 9B Each of the above depicts an arrangement of a first side of a substrate support 1 having multiple clamping regions 600 defined by multiple sealing structures 400. The substrate support 1 may be as described above. Figure 4 , Figure 5 and Figure 6 The substrate support described above. Each sealing structure 400 can be continuous without any interruptions. A single sealing structure can define a clamping area 611. Figure 9A In this arrangement, one or more clamping areas 600 are defined by a plurality of sealing structures 400. In other words, two of the plurality of sealing structures 400 can together define a closed area corresponding to the respective clamping areas 612, 613, 614. Figure 9A In the arrangement, similar to Figure 7 The substrate support 1 includes a plurality of clamping regions 611, 612, 613, and 614. Each of the plurality of clamping regions 611, 612, 613, and 614 preferably corresponds to one of a plurality of channels 50 located on the second side of the substrate support 1. Each clamping region 611, 612, 613, and 614 is arranged at a different radial distance from the center of the substrate support 1. For example, a first clamping region 611 is arranged at the center of the substrate support 1, a second clamping region 612 is arranged radially outside the first clamping region 611, a third clamping region 613 is arranged radially outside the second clamping region 612, and a fourth clamping region 614 is arranged radially outside the third clamping region 613. Figure 9A In the configuration, the sealing structures 400 are not equidistantly spaced in the radial direction of the substrate support 1. In an alternative arrangement, the sealing structures 400 may be equidistantly spaced in the radial direction of the substrate support 1. Alternatively, the sealing structures 400 may be spaced more closely toward the periphery of the substrate support 1 than toward the center of the substrate support 1, for example, to reduce the area difference of the clamping region 600. Figure 9A In the arrangement, each sealing structure extends 360° in the circumferential direction of the substrate support 1.

[0089] Figure 9B A first side 110 of a substrate support 1 is described, having a plurality of clamping regions 600 defined by a plurality of sealing structures 400. Each sealing structure 400 is intended to form a closed region corresponding to a corresponding clamping region 600. In other words, each sealing structure 400 may be continuous without any discontinuities and may define a clamping region 600. Figure 9B In the arrangement, the substrate support 1 includes multiple sets of clamping regions 600, 601, 602, and 603. Each set of clamping regions 600 preferably corresponds to one of a plurality of channels 50 located on the second side of the substrate support 1. Each set of clamping regions 601, 602, and 603 is arranged at different radial distances from the center of the substrate support 1. For example, the first set 601 is arranged at the center of the substrate support 1, the second set 602 is arranged radially outside the first set 601, and the third set 603 is arranged radially outside the second set 602. One or more of the sets 602 and 603 may include multiple sealing structures 400. In other words, one or more of the sets 602 and 603 may include multiple clamping regions 600. Figure 9B In the arrangement, each of the second group 602 and the third group 603 includes a plurality of clamping regions 600 distributed around the substrate support 1 in the circumferential direction.

[0090] Figure 10 A cross-sectional view of the substrate support 1 is depicted. In this arrangement, the bottom plane of the first side is different between the clamping areas. Figure 10 In this arrangement, the distance between the first side and the second side is different between the clamping areas. Specifically, in this example, the body 10 of the substrate support 1 is thinner at the center than at the periphery.

[0091] The first bottom plane 111 on the first side in the first clamping region is lower than the second bottom plane 112 on the first side in the second clamping region. The second clamping region is closer to the periphery of the substrate support 1 than the first clamping region. Furthermore, the second bottom plane 112 on the first side in the second clamping region is lower than the third bottom plane 113 on the first side in the third clamping region. The third clamping region is closer to the periphery of the substrate support 1 than the second clamping region. Figure 10In the arrangement shown, there is a step change in the bottom planes 111, 112, 113 between the clamping areas. In an alternative arrangement, the bottom planes may be tilted, such that the average bottom plane is different between the clamping areas (not shown). The tilted bottom can provide a smooth transition between the clamping areas. In another arrangement, the bottom planes 111, 112, 113 may be generally flat within each clamping area, but the transition of the bottom planes between the clamping areas may be tilted. In a preferred arrangement (not shown), in addition to the bottom planes being different between the clamping areas, the substrate support 1 may also include one or more sealing structures 400 to define one or more clamping areas. The sealing structures may be consistent with those referenced above. Figure 8 The described sealing structure 411, 412 or above refers to the above. Figure 9A The described sealing structure 400 is the same.

[0092] In particular, when supporting a warped substrate W with a bowl-shaped or umbrella-shaped form, a higher bottom plane near the periphery of the first side of the substrate support 1 and a lower bottom plane at the center of the first side of the substrate support 1 can provide benefits. For such warped wafers, if the first side of the substrate support 1 is flat, the distance between the first side and the lower side of the substrate W will increase towards the periphery of the substrate W. Even before any flow is provided to induce negative pressure, the shape of the bottom, with a higher plane towards the outer periphery of the substrate W, allows the bottom of the first side to be closer to the substrate W compared to a substrate support 1 with a flat bottom plane throughout the first side. Furthermore, once the innermost clamping area is activated to induce flow to provide negative pressure, the center of the substrate W will be drawn towards the first side, and the distance between the bottoms of the clamping areas radially outside the innermost clamping area of ​​the first side may be further reduced. Thus, particularly when implemented in conjunction with controllable clamping areas, the amount or flow required to secure the warped substrate W to the substrate support 1 can be reduced by the different bottom planes 111, 112, 113 of the first side.

[0093] like Figures 6 to 8 and Figure 10 As shown, the body 10 of the substrate support 1 may define a plurality of loading pin holes 7. Figure 8 and Figure 10 As shown, each loading pin hole 7 in the loading pin hole 7 is a through hole extending from the second side to the first side. Each loading pin hole 7 in the loading pin hole 7 can be configured to receive a loading pin (not shown) for assisting in loading the substrate W onto and / or unloading the substrate W from the substrate support 1.

[0094] The plurality of loading pin holes 7 preferably includes two or more sets of loading pin holes 7. The loading pin holes 7 in each set are located at different radial distances from the center of the substrate support 1. In other words, the loading pin holes 7 of the first set of loading pin holes 7 can be located radially inside the loading pin holes 7 of the second set of loading pin holes 7. Optionally, loading pin holes 7 belonging to the same set can be located at the same radial distance from the center of the substrate support 1. Each set of loading pin holes 7 can correspond to a corresponding clamping area.

[0095] The substrate support 1 can be configured to support substrates W of different sizes. For example, a relatively small substrate W can be loaded / unloaded using a set of loading pin holes 7 located in a radially inward position. As an alternative or supplement to the radially inward loading pin holes 7, a relatively large substrate W can be loaded / unloaded using a set of loading pin holes 7 located in a radially outward position. Alternatively or additionally, a relatively small substrate W can be secured to the substrate support 1 by applying negative pressure to a radially inward clamping region (e.g., the first clamping regions 510, 610). In addition to the radially inward clamping regions (e.g., the first clamping regions 510, 610), a relatively large substrate W can be secured to the substrate support 1 by applying negative pressure to a radially outward clamping region (e.g., the second clamping regions 520, 620).

[0096] The substrate support 1 may further include one or more raised regions 9 on a first side surrounding one or more loading pin holes 7. In other words, the bottom plane of the first side in the raised regions 9 surrounding one or more loading pin holes 7 is higher than the bottom plane of the region on the first side away from one or more loading pin holes 7. For example, as Figure 10 As shown, the raised region 9 (i.e., region 90) surrounding the loading pin hole 7 has a bottom plane that is higher than the bottom plane 112 in the region surrounding the raised region 9. In other words, the raised region 9 has a bottom plane that is higher than the bottom plane 112 of most of the clamping region on the first side. The raised region 9 can reduce the possibility of flow leakage around the corresponding loading pin hole 7. Desiredly, a sealing structure or raised region 9 can be provided around each loading pin hole 7 in the loading pin hole 7 of the substrate support 1. Therefore, the pressure on the substrate W can be more uniform. In addition, the amount or flow rate required to adequately secure the substrate W can be reduced.

[0097] Figures 11A to 11C It shows including Figure 10 An exemplary arrangement of the portion 90 of the raised region 9. The raised region 9 can be flat, for example, as shown in the image. Figure 11AAs shown in the diagram. Specifically, the raised region 9 can be a flat region 91 flush with the bottom plane 112 surrounding the raised region 9, and the flat region 91 can be horizontal. Relative to the bottom plane 112 surrounding the raised region 9, the raised region 9 can have an upward gradient profile toward one or more loading pin holes 7. In other words, in the raised region 9, the bottom plane can increase as the distance to the loading pin holes 7 decreases. For example, the upward gradient profile can be a ramp 92, such as... Figure 11B As shown. Alternatively, the raised region 9 may have an upward gradient profile that increases radially with the distance from the center of the substrate support 1. The upward gradient profile may have any shape. In a preferred arrangement, the upward gradient profile may be a plurality of steps 93, such as Figure 11C As shown in the diagram. Multiple steps 93 can be manufactured more easily than ramps or curved profiles.

[0098] like Figure 12A , Figure 12B and Figure 13 As shown in the arrangement, a substrate support 1 is present, configured to support a substrate W. The substrate support 1 includes a body 10 having a first side 14 configured to support the substrate W and a second side 15 opposite to the first side 14. The body 1 defines a plurality of through holes 12 and a plurality of inlets. The plurality of inlets are for connection to one or more positive pressure sources and / or negative pressure sources (not shown). The inlets can be connected to the above-referenced... Figures 4 to 7 The inlets 70 are identical. Each through-hole 12 extends from the second side 15 to the first side 14. Each through-hole 12 is in fluid communication with at least one of the plurality of inlets.

[0099] Substrate support 1 may optionally be combined as described above, for example. Figures 2 to 10 The substrate support 1. The main body 10 may also define a plurality of through holes 12 in areas not corresponding to the channel 50. For example, Figure 12A and Figure 12B As shown, each through hole 12 extends from the second side 15 of the body 1 to the first side 14 of the body 1.

[0100] Fluid flow can be provided through the through-hole 12, allowing the fluid flow to provide negative pressure, thereby facilitating the fixation of the substrate W to the substrate support 1. For example... Figure 12A As shown, fluid is desired to flow (in the direction indicated by the arrow) from the first side 14 of the body 10 through the through-hole 12 to the second side 15 of the body 10 to generate a force that attracts the substrate W to the substrate support 1. In some cases, the substrate W may be warped such that some regions of the substrate W (typically the more peripheral regions) are further away from the substrate support 1 than other regions of the substrate W (such as regions closer to the center). In other words, the distance between the through-hole 12 and the substrate W in one region may be greater than the distance between the through-hole 12 and the substrate W in another region.

[0101] For example in Figure 12A In region 121, if all vias 12 are unrestricted, the flow and associated forces are distributed across the multiple vias 12. In region 121 where the substrate W is farther from the substrate support 1, the adsorption force provided by the flow through the vias 12 can have a smaller effect on the substrate W than the force provided by the flow through the vias 12 in other regions closer to the substrate support 1. Therefore, it is desirable to utilize the flow through the vias 12 more effectively by applying the adsorption force in a more targeted manner. This effect can be achieved, for example, by using a check valve 80 to restrict the flow through certain vias 12 at certain times. In this way, the adsorption force provided by the unrestricted vias 12 can be locally larger. Subsequently, the vias 12 can be sequentially unrestricted so that the substrate W is locally attracted to the substrate support 1 in the region around each via 12 until the substrate W is clamped to the substrate support 1.

[0102] exist Figure 12B In the arrangement described herein, one or more through-holes 12 are in fluid communication with corresponding check valves 80. The check valves 80 are configured to restrict fluid flow through the corresponding through-holes 12 when the check valves 80 are closed. In other words, when closed, the check valves 80 can partially or completely block flow through the corresponding through-holes 12. The check valves 80 are configured to allow fluid flow through the corresponding through-holes 12 when the check valves 80 are open. The substrate support 1 may include one or more check valves 80. Alternatively, the check valves 80 may be positioned further away from the substrate support 1, but still within the broader substrate support system.

[0103] exist Figure 12B In the arrangement shown, the check valve 80 is part of the substrate support 1. Specifically, in Figure 12B In one arrangement, the check valve 80 is completely disposed within the through-hole 12 to restrict fluid flow through the through-hole 12. In another arrangement (not shown), the check valve 80 may be disposed only partially within the through-hole 12. Alternatively, the check valve 80 may be disposed at other locations in the flow path leading to the through-hole 12 to restrict fluid flow through the through-hole 12.

[0104] like Figure 12B As shown, check valve 80 is desiccated to restrict flow through via 12 in regions of substrate W further from substrate support 1. Check valve 80 is also desiccated to open in regions 122 where substrate W has become sufficiently close to substrate support 1 to allow flow through via 12. For example, in Figure 12BIn this arrangement, the two rightmost through-holes 12 have check valves 80 in a closed state, while the check valves 80 on the left side of the two rightmost through-holes 12 are in an open state, allowing flow in the region 122 where the substrates W have become sufficiently close. When the adsorption force takes effect, the substrate W will be further pulled towards the substrate support 1, and the adjacent check valves 80 can then open to allow unrestricted flow through the through-holes 12. This contrasts with arrangements where flow through all through-holes 12 is always completely unrestricted (such as...). Figure 12A Compared to the previous arrangement, the substrate W can be clamped at the appropriate position on the substrate support 1 more quickly and / or more efficiently.

[0105] The check valve 80 may optionally be configured to be controllable, changing from a closed state to an open state. The check valve 80 may change from a closed state to an open state in response to a user command. Alternatively or additionally, the check valve 80 may change from a closed state to an open state in response to the satisfaction of a predetermined condition.

[0106] The check valve 80 is preferably configured to change from a closed state to an open state when the pressure difference between the first pressure and the second pressure is reduced to below a predetermined opening pressure difference threshold. The first pressure is located along the edge of the check valve 80 (e.g., ...). Figure 12B The pressure on the upstream side 801 in the direction of fluid flow (indicated by the middle arrow), and the second pressure is located along the check valve 80 (as shown by the middle arrow). Figure 12B The pressure on the downstream side 801 in the fluid flow direction (indicated by the middle arrow). In other words, the check valve 80 is configured to change from a closed state to an open state in response to the pressure difference across the check valve 80 decreasing below a predetermined opening pressure difference threshold. The substrate support 1 or substrate support system is desirably configured such that the difference between the first pressure and the second pressure is reduced as the distance between the substrate W and the first side 14 of the adjacent corresponding through-hole 12 of the body 10 decreases. In other words, the substrate support 1 and the check valve 80 are desirably configured such that the check valve 80 changes from a closed state to an open state in response to the substrate W in the region adjacent to the corresponding through-hole 12 moving sufficiently close to the first side 14 of the body 10. For example, the check valve 80 may change from a closed state to an open state in response to the substrate W in the region 122 of the corresponding through-hole 122 being within a predetermined proximity to the first side 14 of the body 10.

[0107] Figure 13 This illustrates an arrangement in which a warped substrate W is clamped onto a substrate support 1. Figure 13 In the figure, the bending torque T applied to the substrate W is represented by the area under the curve. Figure 13 The arrangement includes multiple check valves 80. Figure 13The time points shown are indicated by adjacent arrows to show that the two leftmost check valves 80 are open and the two rightmost check valves 80 are closed, indicating unrestricted fluid flow. The two leftmost check valves 80 are open to create a localized vacuum flow in the region of the warped substrate W sufficiently close to the corresponding through-hole 12, resulting in a larger aerodynamic torque (or downward pressure) without consuming unnecessary flow when the substrate W is positioned further away.

[0108] Figure 13 The substrate support 1 of the arrangement includes a plurality of protrusions 20 configured to support the substrate W when the substrate W is clamped to the substrate support 1. The bottom height h of the protrusion 20 is the peak value of the protrusion 20 located above the upper surface of the body 10. Using an arrangement including a check valve 80, the bottom height h can be selected to a lower value than conventional. This is because the allowable pressure drop per unit length per face is significantly higher. Therefore, due to the smaller bottom height h, the adsorption force on the substrate W is expected to increase, and due to the closure of the vias 12 in areas where the distance from the substrate W would otherwise render the adsorption force ineffective, the local adsorption force through each via 12 is expected to increase. This arrangement can be expected to provide a more effective bending torque T on the warped substrate W, so that the warped substrate W can more effectively achieve a flat clamping state.

[0109] Multiple through-holes 12 can define multiple clamping areas. In other words, similar to the channel 50 described above, for example, refer to... Figures 4 to 10 The through-holes 12 and check valves 80 allow the substrate W to be sequentially fixed in different regions. In other words, there can be a first group including one or more through-holes 12 and a second group including one or more through-holes 12. The first group and the second group can be located in different regions of the body 10. Thus, the check valves 80 corresponding to the first group of through-holes 12 can be set to the open state at different times than the check valves 80 of the second group. There can be more than two groups of through-holes 12.

[0110] For example, each of the second set of vias 12 can be located in a region that is radially outward than the region in which the first set of vias 12 are located in the body 10. With this arrangement, the center of the substrate W can be fixed before the region that is radially outward to which the substrate W is fixed.

[0111] In addition, through hole 12 can be set Figure 9A and Figure 9BThe different clamping areas 601, 602, 603, 611, 612, and 613 are arranged. In other words, one or more through holes 12 with corresponding check valves 80 can be provided in one or more of the clamping areas 601, 602, 603, 611, 612, and 613. For example, one or more through holes 12 with corresponding check valves 80 can be provided in each of the clamping areas 601, 602, 603, 611, 612, and 613. The corresponding check valve 80 can be configured to open to initiate activation of the corresponding clamping area in which the corresponding through hole 12 is provided. Alternatively, the corresponding check valve 80 can be configured to open in response to activation of the corresponding clamping area in which the corresponding through hole 12 is provided. In this way, the channel 50, as well as the through holes 12 and the check valves 80, can work together to provide a controlled and efficient clamping method for the substrate W.

[0112] Figure 14A The check valve 80 is shown in the closed state. Figure 14B It shows that it is in the open state. Figure 14A The check valve 80. Figure 14A and Figure 14B The check valve 80 includes a spring 81. The pressure difference is the pressure difference between a first pressure P1 located upstream of the check valve 80 and a second pressure P2 located downstream of the check valve 80. Figure 14A and Figure 14B The check valve 80 is configured to remain closed until a first pressure P1 located upstream of the check valve 80 (opposite to the side from which negative pressure is applied) is sufficiently reduced. In other words, the pressure difference (P2-P1) becomes less than the pressure required to counteract the spring force required to open the check valve 80. The force of the spring 81 can be based on a desired predetermined pressure difference threshold. The check valve 80 may optionally be configured such that the force of the spring 81 is adjustable. Thus, the predetermined pressure difference threshold can be adjusted as needed, for example, according to different applications or environmental conditions.

[0113] Spring 81 can be any suitable type of spring, such as a coil spring or a leaf spring. Preferably, the spring is a non-linear spring. For example, spring 81 can be configured such that the rate of change of flow velocity through check valve 80 for a pressure difference close to a predetermined pressure difference threshold between the first pressure P1 and the second pressure P2 is greater than the rate of change of flow velocity through check valve 80 for a pressure difference between the first pressure P1 and the second pressure P2 having a difference greater than the predetermined pressure difference threshold. This allows for more precise control of the flow velocity at or near the predetermined pressure difference threshold.

[0114] In some arrangements, for example Figure 13In this arrangement, the spring 81 of the check valve 80 is a thrust spring. In other words, the spring 81 is configured to extend when the compressive load on the spring 81 is reduced below a predetermined threshold. In this arrangement, the fixed end of the thrust spring 81 is fixed to the downstream side of the check valve 80 in the direction of fluid flow.

[0115] In an alternative arrangement, spring 81 can be a tension spring. In other words, spring 81 is configured to contract when the tensile load on spring 81 is reduced to below a predetermined threshold. In this arrangement, the fixed end of thrust spring 82 can be fixed to the upstream side of check valve 80.

[0116] The check valve 80 may include a block 82 disposed at the free end of the spring 81, such as... Figure 14A and Figure 14B As shown in the arrangement, the block 82 is configured to restrict or block flow through the corresponding through-hole 12, or restrict or block flow in the flow path leading to the corresponding through-hole 12, when the check valve 80 is closed. The block 82 preferably has a diameter greater than the width of the spring 81. The block 82 can have any suitable shape to achieve the restriction / blocking function. For example, the block can be a spherical ball.

[0117] Furthermore, the check valve 80 may include an alternative mechanism to the spring 81. Any suitable mechanism may be used. For example, the check valve 80 may include a swing-type mechanism configured to swing or rotate to a closed state and an open state, wherein in the closed state, the flow path to or through the corresponding through-hole 12 is restricted, and in the open state, the flow to or through the corresponding through-hole 12 is unrestricted.

[0118] Check valve 80 may optionally define a vent. The vent can desiccate check valve 80 to make it more robust to small flow leakage. The vent may be defined between the surface of the through-hole 12 in body 10 and a portion of check valve 80. The vent may be defined within block 82, and block 82 is configured such that when check valve 80 is in a closed state (e.g., ... Figure 14A (As shown in the closed state) when seated between seats 85. Check valve 80 is preferably configured such that the size of the vent orifice is adjustable. This allows for localized adjustment at each check valve 80, thereby making the system more robust to different flow conditions.

[0119] The check valve 80 can be configured to controllably return from an open state to a closed state. For example, after a substrate W has been removed and before the next substrate W is clamped to the substrate support 1, it is desirable to set the check valve 80 in the closed state. Thus, when the desired conditions are met, the check valve 80 can open to effectively secure the substrate W to the substrate support 1, and can then be closed again to prepare for the next substrate W.

[0120] Check valve 80 can be configured to return from an open state to a closed state by controlling a positive pressure source and / or a negative pressure source. Specifically, the positive and / or negative pressure sources can be controlled such that the pressure difference between a first pressure P1 located upstream of check valve 801 and a second pressure P2 located downstream of check valve 802 exceeds a predetermined closing pressure difference threshold. In other words, check valve 80 can be configured to return to a closed state when the pressure difference reaches or exceeds the predetermined closing pressure difference threshold.

[0121] Alternatively or additionally, any suitable method can be used to help check valve 80 return from the open state to the closed state. For example, check valve 80 can be configured to return from the open state to the closed state by applying acceleration and / or magnetic force.

[0122] It will also be understood that the principles of this invention can be applied to metrology tools or lithography tools, as well as clamping systems employing electrostatic fixtures. In such cases, other relevant parameters, such as the voltage applied to the electrostatic fixture, can be controlled, rather than the flow rate of the drain stream.

[0123] Although the use of metrology systems in the context of IC manufacturing is specifically mentioned herein, it should be understood that the metrology systems described herein can have other applications, such as in the manufacture of integrated optical systems, patterning for guiding and detecting magnetic domain memories, flat panel displays, liquid crystal displays (LCDs), thin-film magnetic heads, etc. Those skilled in the art will understand that, in the context of such alternative applications, any use of the terms "wafer" or "die" herein can be considered synonymous with the more general terms "substrate" or "target portion," respectively. The substrates described herein can be processed before or after exposure in, for example, track or coating development systems (typically tools that apply a resist layer to the substrate and develop the exposed resist), metrology tools, and / or inspection tools. Where applicable, the disclosure herein can be applied to such and other substrate processing tools. Furthermore, substrates can be processed more than once, for example, to manufacture multilayer ICs, such that the term "substrate" as used herein can also refer to a substrate that already contains one or more processed layers.

[0124] Although the use of embodiments of the invention in the context of optical lithography has been specifically mentioned above, it will be understood that the invention can be used in other applications.

[0125] Although specific embodiments of the present invention have been described above, it will be understood that the present invention may be practiced in ways other than those described.

[0126] The above description is intended to be illustrative and not restrictive. Therefore, it will be apparent to those skilled in the art that modifications can be made to the described invention without departing from the scope of the claims set forth below.

[0127] The embodiments include aspects numbered as follows:

[0128] 1. A substrate support configured to support a substrate, the substrate support comprising a body having:

[0129] A first side, the first side being configured to support the substrate; and

[0130] The second side is opposite to the first side;

[0131] The second side has a plurality of grooves, the plurality of grooves including a plurality of channels and a plurality of conduits;

[0132] The plurality of channels includes a first channel and a second channel generally surrounding the first channel; the plurality of catheters includes at least one first catheter and at least one second catheter.

[0133] The first channel is in fluid communication with the at least one first conduit, and the at least one first conduit extends toward the periphery of the substrate support.

[0134] The second channel is in fluid communication with the at least one second conduit, and the at least one second conduit extends toward the periphery of the substrate support.

[0135] 2. The substrate support according to aspect 1, wherein the second channel has a generally arcuate shape.

[0136] 3. The substrate support according to aspect 1 or 2, wherein the first channel has a generally arcuate shape.

[0137] 4. The substrate support according to aspect 3 when subordinate to aspect 2, wherein the first channel and the second channel are concentric with each other.

[0138] 5. The substrate support according to any of the foregoing aspects, wherein the second channel is formed with an interruption in the circumferential direction of the substrate support, wherein the interruption is formed in a cut-out region on the second side, wherein the at least one first conduit extends through the cut-out region.

[0139] 6. The substrate support according to any of the foregoing aspects, wherein the first conduit extends in the radial direction.

[0140] 7. The substrate support according to any of the foregoing aspects, wherein the second conduit extends in the radial direction.

[0141] 8. The substrate support according to aspect 7 when subordinate to aspect 6, wherein the first conduit and the second conduit form a non-zero angle.

[0142] 9. The substrate support according to any of the foregoing aspects, wherein each of the plurality of conduits is in fluid communication with one of the plurality of channels.

[0143] 10. The substrate support according to any of the foregoing aspects further includes a plurality of inlets for connection to one or more positive and / or negative pressure sources, wherein each conduit is in fluid communication with one of the plurality of inlets.

[0144] 11. The substrate support according to aspect 10, wherein each of the plurality of inlets is configured to face the periphery of the substrate support.

[0145] 12. The substrate support according to any of the foregoing aspects, wherein, in addition to the first channel and the second channel, the plurality of channels further include at least one additional channel.

[0146] 13. The substrate support according to aspect 12, wherein the at least one additional channel surrounds the second channel.

[0147] 14. The substrate support according to aspect 13, wherein the at least one additional channel is concentric with the second channel.

[0148] 15. The substrate support according to any one of aspects 12 to 14, wherein the at least one additional channel comprises two or three channels.

[0149] 16. The substrate support according to any of the foregoing aspects, wherein each of the first channel and the second channel includes at least one through-hole, wherein the at least one through-hole extends from the second side to the first side.

[0150] 17. The substrate support according to aspect 16, wherein the at least one through hole comprises a plurality of through holes.

[0151] 18. The substrate support according to aspect 16 or 17, wherein the body further defines a plurality of through holes in a region not corresponding to the first channel and the second channel, wherein each through hole extends from the second side of the body to the first side of the body.

[0152] 19. A substrate support according to any one of aspects 16 to 18, wherein one or more through-holes are in fluid communication with corresponding check valves, wherein the check valves are configured to: restrict fluid flow through the corresponding through-holes when the check valves are closed, and allow fluid flow through the corresponding through-holes when the check valves are open;

[0153] The check valve is configured to change from a closed position to an open state when the pressure difference between a first pressure on the upstream side of the check valve along the fluid flow direction and a second pressure on the downstream side of the check valve along the fluid flow direction is reduced to below a predetermined opening pressure difference threshold.

[0154] 20. A substrate support configured to support a substrate, comprising:

[0155] The body has a first side configured to support the substrate and a second side opposite to the first side;

[0156] The main body defines a plurality of through holes, wherein each through hole extends from the second side to the first side; and

[0157] Multiple inlets for connection to one or more positive and / or negative pressure sources, wherein each through-hole is in fluid communication with at least one of the multiple inlets.

[0158] One or more through-holes are in fluid communication with corresponding check valves, the check valves being configured to: restrict fluid flow through the corresponding through-holes when the check valve is closed, and allow fluid flow through the corresponding through-holes when the check valve is open; and

[0159] The check valve is configured to change from a closed position to an open state when the pressure difference between a first pressure on the upstream side of the check valve along the fluid flow direction and a second pressure on the downstream side of the check valve along the fluid flow direction is reduced to below a predetermined opening pressure difference threshold.

[0160] 21. The substrate support according to aspect 20,

[0161] Each check valve is configured to restrict fluid flow through the corresponding through-hole when the check valve is in the closed state, and to allow fluid flow through the corresponding through-hole when the check valve is in the open state.

[0162] Each check valve is configured to change from an open position to a closed position when the pressure difference between a first pressure on the upstream side of the check valve along the fluid flow direction and a second pressure on the downstream side of the check valve along the fluid flow direction exceeds a predetermined pressure difference threshold.

[0163] 22. The substrate support according to any one of aspects 19 to 21, wherein the pressure difference between the first pressure and the second pressure is reduced as the distance between the substrate and the first side of the body adjacent to the corresponding through hole is reduced.

[0164] 23. The substrate support according to any one of aspects 19 to 22, wherein the plurality of through holes are disposed at different radial distances from the center of the body, and the plurality of through holes define a plurality of clamping areas at the different radial distances from the center of the body.

[0165] 24. The substrate support according to any of the foregoing aspects, wherein the plurality of channels on the second side are associated with a plurality of corresponding clamping regions.

[0166] 25. The substrate support according to aspect 24, wherein each clamping region corresponds to a corresponding channel.

[0167] 26. A substrate support according to any of the foregoing aspects, comprising a plurality of loading pin holes, wherein each of the loading pin holes is a through hole extending from the second side to the first side.

[0168] 27. According to aspect 26, the plurality of loading pin holes include two or more sets of loading pin holes, wherein the loading pin holes in each set of loading pin holes are located at different radial distances from the center of the substrate support.

[0169] 28. The substrate support according to aspect 26 or 27, comprising one or more raised regions on the first side surrounding one or more of the loading pin holes, wherein the bottom plane of the first side in the raised regions surrounding one or more of the loading pin holes is higher than the bottom plane of the first side in the region away from the one or more loading pin holes.

[0170] 29. The substrate support according to aspect 28, wherein the raised region has an upward gradient profile toward the one or more loading pin holes.

[0171] 30. The substrate support according to aspect 29, wherein the upward gradient profile is a ramp or a plurality of steps.

[0172] 31. The substrate support according to any one of aspects 24 to 30, wherein the bottom plane of the first side is different between the clamping areas.

[0173] 32. The substrate support according to aspect 31, wherein the distance between the first side and the second side is different between the clamping regions.

[0174] 33. The substrate support according to aspect 31 or 32, wherein the bottom plane of the first side in the first clamping region is lower than the bottom plane of the first side in the second clamping region, wherein the second clamping region is closer to the periphery of the substrate support than the first clamping region.

[0175] 34. The substrate support according to any of the foregoing aspects further includes a plurality of first protrusions extending from the first side, wherein the plurality of first protrusions are configured to support the substrate.

[0176] 35. The substrate support according to aspect 34, wherein the distal ends of the plurality of first protrusions define a generally flat plane.

[0177] 36. The substrate support according to any of the foregoing aspects further includes a plurality of second protrusions extending from the second side, wherein the plurality of second protrusions are configured to support the substrate support to the platform.

[0178] 37. The substrate support according to aspect 36, wherein the distal ends of the plurality of second protrusions define a generally flat plane.

[0179] 38. The substrate support according to any of the foregoing aspects, wherein at least one of the plurality of grooves is surrounded by the sealing structure on the second side.

[0180] 39. The substrate support according to aspect 38, wherein the sealing structure defines one or more clamping areas on the second side.

[0181] 40. The substrate support according to aspect 38 or 39 when subordinate to aspect 36 or 37, wherein the sealing structure has a height less than the height of the plurality of second protrusions.

[0182] 41. The substrate support according to any of the foregoing aspects, wherein at least one of the plurality of grooves is surrounded by a sealing structure on the first side.

[0183] 42. The substrate support according to aspect 41, wherein the sealing structure defines one or more clamping areas on the first side.

[0184] 43. The substrate support according to aspect 41 or 42 when subordinate to aspect 34 or 35, wherein the sealing structure has a height less than the height of the plurality of first protrusions.

[0185] 44. A substrate support system comprising a substrate support member according to any of the foregoing aspects.

[0186] 45. The substrate support system according to aspect 44 when subordinate to aspects 24, 25, 39 or 42, further comprising one or more controllers configured to individually control each clamping area to activate the corresponding clamping area to secure the substrate to the substrate support in the area on the first side corresponding to the corresponding clamping area.

[0187] 46. ​​The substrate support system according to aspect 45, wherein the one or more controllers comprise a plurality of controllers, wherein each of the plurality of controllers is configured to control a corresponding clamping area.

[0188] 47. The substrate support system according to aspect 45 or 46, wherein the one or more controllers are configured to control a plurality of positive pressure supply sources and / or negative pressure supply sources in fluid communication with the plurality of channels via the plurality of conduits.

[0189] 48. The substrate support system according to aspect 47, wherein each positive pressure supply source and / or negative pressure supply source is in fluid communication with one of the plurality of channels via at least one of the plurality of conduits.

[0190] 49. The substrate support system according to any one of aspects 45 to 48, wherein the one or more controllers are configured to sequentially activate the clamping area.

[0191] 50. The substrate support according to any one of aspects 45 to 49, wherein the one or more controllers are configured to activate the clamping region based on pressure in the clamping region.

[0192] 51. The substrate support system according to aspect 50, wherein the one or more controllers are configured to activate a first clamping region among the plurality of clamping regions, and to activate a second clamping region among the plurality of clamping regions once the pressure in the first clamping region exceeds a pressure threshold.

[0193] 52. The substrate support system according to aspect 51, wherein the second clamping region is configured to be closer to the periphery of the substrate support than the first clamping region.

[0194] 53. The substrate support system according to any one of aspects 44 to 52 further includes a platform configured to support the substrate support, wherein at least one of the plurality of inlets is connected to a negative pressure source to secure the substrate support to the platform.

[0195] 54. The substrate support system according to any one of aspects 44 to 53 when subordinate to any one of aspects 19 to 23, further comprising the one or more check valves.

[0196] 55. The substrate support system according to aspect 54, wherein the one or more check valves are disposed within the corresponding through holes.

[0197] 56. The substrate support system according to aspect 54 or 55, wherein the one or more check valves include springs, and wherein the predetermined pressure difference threshold is set based on the force of the springs.

[0198] 57. The substrate support system according to aspect 56, wherein the one or more check valves are configured such that the force of the spring is adjustable.

[0199] 58. The substrate support system according to aspect 56 or 57, wherein the spring is a thrust spring, and wherein the fixed end of the thrust spring is fixed to the downstream side of the check valve in the direction of fluid flow.

[0200] 59. The substrate support system according to aspect 56 or 57, wherein the spring is a tension spring, and wherein the fixed end of the thrust spring is fixed to the upstream side of the check valve in the direction of fluid flow.

[0201] 60. A substrate support system according to any one of aspects 56 to 59, wherein a block is disposed at the free end of the spring, wherein the block is configured to restrict or block flow through the through-hole when the check valve is in the closed state.

[0202] 61. The substrate support system according to aspect 60, wherein the block is a spherical sphere.

[0203] 62. The substrate support system according to any one of aspects 56 to 61, wherein the spring is a leaf spring.

[0204] 63. The substrate support system according to any one of aspects 56 to 62, wherein the spring is a nonlinear spring.

[0205] 64. The substrate support system according to any one of aspects 54 to 63, wherein the check valve defines a drain orifice.

[0206] 65. The substrate support system according to aspect 64, wherein the drain hole is defined between the surface of the through hole in the body and a portion of the check valve.

[0207] 66. The substrate support system according to aspect 64 or 65, wherein the check valve is configured such that the size of the vent hole is adjustable.

[0208] 67. The substrate support system according to any one of aspects 54 to 66, wherein the check valve is configured to be controllable to return from the open state to the closed state.

[0209] 68. The substrate support system according to aspect 67, wherein the check valve is configured to return from the open state to the closed state by controlling the positive pressure source and / or the negative pressure source such that the pressure difference between the first pressure and the second pressure exceeds a predetermined closing pressure difference threshold.

[0210] 69. The substrate support system according to aspect 67 or 68, wherein the check valve is configured to return from the open state to the closed state by applying acceleration and / or magnetic force.

[0211] 70. A measurement system comprising a substrate support system according to any one of aspects 44 to 69.

Claims

1. A substrate support configured to support a substrate, the substrate support comprising a body having: a first side configured to support the substrate; and a second side opposite the first side; wherein the second side formed with a plurality of grooves comprising a plurality of channels and a plurality of conduits; wherein the plurality of channels comprises a first channel and a second channel substantially surrounding the first channel; wherein the plurality of conduits comprises at least one first conduit and at least one second conduit; wherein the first channel is in fluid communication with the at least one first conduit, and the at least one first conduit extends towards a periphery of the substrate support, and wherein the second channel is in fluid communication with the at least one second conduit, and the at least one second conduit extends towards the periphery of the substrate support.

2. The substrate support of claim 1, wherein, the second channel has a substantially arcuate shape, and / or wherein the first channel has a substantially arcuate shape, desirably wherein the first channel and the second channel are concentric with each other.

3. A substrate support as claimed in any preceding claim, wherein, the second channel is formed with an interruption in a circumferential direction of the substrate support, wherein the interruption forms a cut-out region on the second side, wherein the at least one first conduit extends through the cut-out region, and / or wherein the first conduit extends in a radial direction, and / or wherein the second conduit extends in a radial direction, desirably wherein the first conduit forms a non-zero angle with the second conduit.

4. A substrate support as claimed in any preceding claim, wherein, each conduit of the plurality of conduits is in fluid communication with one channel of the plurality of channels, and / or the substrate support further comprises a plurality of inlets for connection to one or more positive pressure sources and / or negative pressure sources, wherein each conduit is in fluid communication with one inlet of the plurality of inlets, desirably wherein each inlet of the plurality of inlets is disposed towards the periphery of the substrate support.

5. A substrate support as claimed in any preceding claim, wherein, the plurality of channels comprises at least one further channel in addition to the first channel and the second channel, desirably wherein the at least one further channel surrounds the second channel, desirably wherein the at least one further channel and the second channel are concentric with each other, and / or wherein the at least one further channel comprises two or three channels.

6. A substrate support as claimed in any preceding claim, wherein, each of the first channel and the second channel comprises at least one through-hole, wherein the at least one through-hole extends from the second side to the first side, desirably wherein the at least one through-hole comprises a plurality of through-holes, desirably wherein the body further defines a plurality of through-holes in regions not corresponding to the first channel and the second channel, wherein each through-hole extends from the second side of the body to the first side of the body, desirably wherein one or more through-holes are in fluid communication with a corresponding check valve, wherein the check valve is configured to restrict fluid flow through the corresponding through-hole when the check valve is in a closed state, and to allow fluid flow through the corresponding through-hole when the check valve is in an open state; wherein the check valve is configured to change from a closed position to an open state when a pressure difference between a first pressure on an upstream side of the check valve in a fluid flow direction and a second pressure on a downstream side of the check valve in the fluid flow direction is reduced below a predetermined opening pressure difference threshold.

7. A substrate support as claimed in any preceding claim, wherein, The plurality of passages on the second side are associated with a plurality of corresponding clamping regions, desirably wherein each clamping region corresponds to a respective passage.

8. A substrate support as set forth in any preceding claim, comprising a plurality of load pin holes, wherein, Each of the load pin holes is a through hole extending from the second side to the first side, desirably wherein the plurality of load pin holes comprises two or more groups of load pin holes, wherein the load pin holes in each group of load pin holes are disposed at different radial distances from a center of the substrate support, the substrate support desirably comprising one or more raised regions on the first side surrounding one of the load pin holes, wherein a floor plane of the first side in the one or more raised regions surrounding the one of the load pin holes is higher than a floor plane of the first side in regions away from the one or more load pin holes, desirably wherein the raised region has an upward gradient profile towards the one or more load pin holes, desirably wherein the upward gradient profile is a slope or a plurality of steps.

9. A substrate support as claimed in claim 7 or 8, wherein, The floor plane of the first side is different between clamping regions, desirably wherein a distance between the first side and the second side is different between clamping regions, desirably wherein a floor plane of the first side in a first clamping region is lower than a floor plane of the first side in a second clamping region, wherein the second clamping region is closer to a periphery of the substrate support than the first clamping region.

10. A substrate support as claimed in any preceding claim, further comprising a plurality of first protrusions extending from the first side, wherein, The plurality of first protrusions are configured to support the substrate, and / or the substrate support further comprises a plurality of second protrusions extending from the second side, wherein the plurality of second protrusions are configured to support the substrate support to a platform, and / or wherein at least one of the plurality of recesses is surrounded by a sealing structure on the second side, and / or wherein at least one of the plurality of recesses is surrounded by a sealing structure on the first side.

11. A substrate support as set forth in claim 10 wherein, Distal ends of the plurality of first protrusions define a generally planar plane, and / or wherein Distal ends of the plurality of second protrusions define a generally planar plane, and / or wherein the sealing structure defines one or more clamping regions on the second side, and / or wherein the sealing structure has a height that is less than a height of the plurality of second protrusions, desirably wherein the sealing structure defines one or more clamping regions on the first side, desirably wherein the sealing structure has a height that is less than a height of the plurality of first protrusions.

12. A substrate support system comprising the substrate support of any preceding claim.

13. A lithographic apparatus comprising the substrate support of any of claims 1 to 11 or the substrate support system of claim 12.

14. A metrology system comprising the substrate support system of claim 12.

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