A vacuum coating method and system

Abstract

This invention discloses a vacuum coating method and system. The system includes a first sputtering chamber, a first vacuum transport channel, a CVD chamber, a second vacuum transport channel, and a second sputtering chamber connected in sequence. This invention utilizes the flow resistance throttling effect created when the substrate moves within the first vacuum transport channel to establish a pressure gradient between the first sputtering chamber and the CVD chamber. This drives the active plasma within the CVD chamber to form a reverse jet pointing towards the first sputtering chamber, performing an in-situ hybridization reaction on the first metal layer on the substrate surface, thereby constructing a gradient transition layer. This invention eliminates physical gate valves, removes particulate contamination, and significantly improves the adhesion and weather resistance of the HUD reflector coating.

Description

Technical Field

[0001] This invention relates to the field of vacuum coating technology, and specifically to a vacuum coating method and system. Background Technology

[0002] With the development of automotive intelligence and aviation technology, head-up display (HUD) systems have become key equipment for improving driving safety and interactive experience. One of the core optical components of a HUD system is an optical mirror, which is usually composed of a curved substrate (such as optical glass, PC, or PMMA) and a highly reflective metal film layer (such as an aluminum layer or niobium layer) deposited on its surface.

[0003] To ensure that HUD reflectors maintain stable optical performance in harsh automotive or airborne environments such as high temperature, high humidity, ultraviolet radiation, and frequent thermal shocks, an organic protective layer (such as organosilicon polymers like HMDSO) is usually deposited on the surface of the metal reflective layer to provide anti-oxidation, corrosion resistance, and scratch resistance.

[0004] However, in the existing mass production manufacturing process of HUD mirrors, there are two main technical challenges that urgently need to be addressed, which directly limit the improvement of product yield and the reduction of costs:

[0005] 1. The metallic reflective layer (inorganic material) and the organic protective layer (organic material) belong to fundamentally different material systems, with significant differences in their crystal structure, coefficient of thermal expansion, and surface energy. In traditional processes, the metallic reflective layer is typically sputtered first in a vacuum environment, followed by direct deposition of the organic protective layer. The two layers are merely physically stacked, lacking a strong chemical bond at the interface. Under stringent automotive-grade thermal shock or high-temperature, high-humidity testing, stress concentration due to thermal expansion and contraction can easily lead to blistering, cracking, or even detachment at the film interface. This results in ghosting, blurring, or black spots in the HUD image, severely impacting driving safety.

[0006] 2. Metal magnetron sputtering typically requires extremely low background gas pressure to ensure the purity and reflectivity of the metal reflective layer; while chemical vapor deposition (CVD) typically requires higher process gas pressure and a high concentration of reactive organic precursor gases. In continuous production lines, to prevent the high-pressure reactive gases from the CVD chamber from flowing back and contaminating the sputtering chamber, existing technologies generally employ two methods: one is to set up a transition chamber with a physical gate valve, and the other is to add an independent buffer chamber. However, the physical gate valve solution has significant drawbacks: frequent mechanical opening and closing actions can easily generate microparticles, which can fall onto the reflector surface and form pinhole defects, leading to pinhole corrosion of the reflector in a humid environment; at the same time, the gate valve action limits the continuous transport speed of the substrate, reducing the production cycle. The independent buffer chamber solution significantly increases the footprint and manufacturing cost of the equipment, and makes it difficult to effectively treat the substrate interface during transport.

[0007] Therefore, there is an urgent need for a vacuum coating method and system that can eliminate physical gate valves, achieve dynamic process isolation during continuous transmission, and construct a high-density, high-bonding gradient transition layer in situ to significantly improve the weather resistance of HUD mirrors. Summary of the Invention

[0008] The purpose of this invention is to provide a vacuum coating method and system, which mainly solves the technical problems in the prior art where poor bonding between the metal layer and the organic protective layer during the fabrication process of optical components leads to insufficient weather resistance, and where it is difficult to balance process isolation and prevention of cross-contamination in continuous production.

[0009] To achieve the above objectives, the present invention provides a vacuum coating method applied to a vacuum coating system, the vacuum coating system comprising a first sputtering chamber and a CVD chamber connected by a first vacuum transmission channel, the vacuum coating method comprising:

[0010] S1. Place the substrate to be coated in the first sputtering chamber, adjust the pressure of the first sputtering chamber to the first pressure, and deposit the first metal layer on the surface of the substrate;

[0011] S2. Drive the substrate from the first sputtering chamber to the CVD chamber via the first vacuum transfer channel; when the substrate is located in the first vacuum transfer channel, use the substrate to reduce the effective ventilation cross section of the first vacuum transfer channel to establish a flow resistance throttling region.

[0012] S3. While maintaining the flow resistance throttling region, chemical vapor deposition precursor gas is injected into the CVD chamber to raise the pressure in the CVD chamber to a second pressure higher than the first pressure, and the chemical vapor deposition precursor gas is excited to generate active plasma; using the pressure gradient formed on both sides of the flow resistance throttling region, the active plasma in the CVD chamber is driven to form a reverse jet pointing towards the first sputtering chamber through the first vacuum transmission channel. The reverse jet performs an in-situ hybridization reaction on the first metal layer on the substrate surface located in the first vacuum transmission channel, thereby constructing a metal-organic hybrid gradient transition layer in-situ on the surface of the first metal layer;

[0013] S4. After the substrate is completely transferred into the CVD chamber, the reverse jet is terminated due to the disappearance of the flow resistance throttling zone. Then, the pressure of the CVD chamber is adjusted to a third pressure that is less than or equal to the first pressure, and an organic protective layer is deposited on the surface of the gradient transition layer.

[0014] Preferably, after step S4, step S5 is further included: driving the substrate from the CVD chamber to the second sputtering chamber via the second vacuum transfer channel, and depositing a second metal layer on the surface of the organic protective layer.

[0015] Preferably, the CVD chamber is connected to an exhaust unit;

[0016] After step S5, step S6 is also included: after the second metal layer is deposited on the substrate, the exhaust unit is controlled to operate to extract the chemical vapor deposition precursor gas remaining in the CVD chamber until the background pressure in the CVD chamber is lower than a preset cleaning threshold, and then the next substrate is transferred.

[0017] Preferably, the first sputtering chamber is connected to a gas analyzer; in step S3, the gas analyzer monitors the partial pressure signal of the organic gas in the first sputtering chamber in real time. When the partial pressure signal of the organic gas exceeds a preset safety threshold, the injection of chemical vapor deposition precursor gas into the CVD chamber is forcibly interrupted and an alarm is triggered.

[0018] Preferably, the first metal layer is an aluminum layer or a niobium layer; the chemical vapor deposition precursor gas is selected from hexamethyldisiloxane or hexamethyldisilazane; the gradient transition layer contains a bonding structure composed of aluminum, oxygen, silicon and carbon elements, or contains a bonding structure composed of niobium, silicon and carbon elements.

[0019] The present invention also provides a vacuum coating system, comprising:

[0020] A first sputtering chamber is configured with a first sputtering source for depositing a first metal layer on the surface of the substrate;

[0021] The CVD chamber is equipped with a gas supply unit for injecting chemical vapor deposition precursor gas into the CVD chamber, and a radio frequency power supply for exciting the chemical vapor deposition precursor gas to generate active plasma.

[0022] A first vacuum transport channel connects the first sputtering chamber and the CVD chamber;

[0023] A transfer mechanism, configured to hold the substrate and move it from the first sputtering chamber to the CVD chamber via the first vacuum transfer channel; and

[0024] The controller is electrically connected to the first sputtering source, the gas supply unit, the radio frequency power supply, and the transmission mechanism, respectively.

[0025] The controller is configured to perform any of the vacuum coating methods described above.

[0026] Preferably, the vacuum coating system further includes a second sputtering chamber connected to the CVD chamber via a second vacuum transmission channel, and the second sputtering chamber is equipped with a second sputtering source;

[0027] The first sputtering chamber, the first vacuum transport channel, the CVD chamber, the second vacuum transport channel, and the second sputtering chamber are connected sequentially along the transport direction of the substrate;

[0028] The first sputtering source includes a DC power supply and an aluminum target; the radio frequency power supply is a capacitively coupled plasma source; and the second sputtering source includes a medium frequency power supply and a niobium target.

[0029] Preferably, the transmission mechanism includes:

[0030] The guide rail passes sequentially through the first sputtering chamber, the first vacuum transfer channel, the CVD chamber, the second vacuum transfer channel, and the second sputtering chamber;

[0031] A movable clamping carrier is slidably disposed on the guide rail for clamping the substrate and moving it in a controlled manner along the guide rail.

[0032] One or more technical solutions provided in this invention have at least the following technical effects or advantages:

[0033] 1. This invention utilizes the flow resistance throttling effect created when the substrate moves within the first vacuum transport channel to establish a pressure gradient between the first sputtering chamber and the CVD chamber, thereby driving the active plasma within the CVD chamber to form a reverse jet pointing towards the first sputtering chamber. Before the substrate fully enters the CVD chamber, this reverse jet impacts and undergoes an in-situ hybridization reaction on the first metal layer on the substrate surface, constructing a gradient transition layer with continuously changing composition between the first metal layer and the subsequently deposited organic protective layer. This gradient transition layer effectively eliminates abrupt changes in interfacial energy levels between heterogeneous materials and significantly enhances the adhesion between the first metal layer and the organic protective layer, thus effectively solving the problem of film blistering and peeling that easily occurs in high-temperature, high-humidity, or thermal shock tests of optical components such as HUD mirrors.

[0034] 2. During the hybridization stage where the substrate is located within the vacuum transport channel, the system utilizes the flow resistance throttling region formed by the substrate body and the inner wall of the first vacuum transport channel to significantly limit the gas flow conductivity of the first vacuum transport channel. Although there is a local reverse jet pointing towards the first sputtering chamber to achieve the hybridization process, this throttling effect strictly limits the leakage flux of the CVD precursor gas to an extremely low range, ensuring that the background pressure of the first sputtering chamber is always maintained within the safe range allowed by the process. This prevents the sputtering source target material in the first sputtering chamber from being poisoned due to excessively high environmental pressure or impurity concentration. In the subsequent deposition stage, when the substrate has completely entered the CVD chamber and the flow resistance throttling region disappears, the system quickly restores the pressure of the CVD chamber to a lower third pressure. By significantly reducing or even reversing the pressure gradient, the system fundamentally eliminates the pressure difference driving force that causes the active plasma in the CVD chamber to flow back and diffuse into the first sputtering chamber. This phased dynamic isolation strategy effectively suppresses unintended chemical reactions between the chemical vapor deposition precursor gas and the sputtering target surface, ensuring the long-term stability of magnetron sputtering glow discharge and the deposition purity of the metal film.

[0035] 3. This invention abandons the traditional method of using mechanical gate valves for chamber isolation in vacuum equipment, eliminating the source of particulate contamination caused by frequent mechanical opening and closing of valves, and reducing the probability of pinhole defects on the surface of optical mirrors from the source. Simultaneously, the in-situ purging effect of the reverse jet on the substrate surface further improves the density and smoothness of the film layer, effectively reducing the risk of pitting corrosion in humid and hot environments, and ensuring high-quality finished optical components.

[0036] 4. This invention cleverly integrates the crucial step of gradient transition layer construction into the simultaneous movement of the substrate via the first vacuum transfer channel driven by the transfer mechanism, eliminating the need for additional transition layer coating chambers or independent ion source processing equipment. This not only shortens the overall length and manufacturing cost of the vacuum coating system but also enables continuous transfer and processing of the substrate between different process chambers, eliminating the time loss caused by waiting for valve operation and evacuation recovery in traditional intermittent production, and significantly improving production efficiency. Attached Figure Description

[0037] Figure 1 This is a schematic diagram of the vacuum coating system provided in an embodiment of the present invention;

[0038] Figure 2 This is a schematic diagram illustrating the working principle of flow resistance throttling and reverse jet in an embodiment of the present invention;

[0039] Figure 3 This is a block diagram illustrating the electrical control principle of a vacuum coating system provided in an embodiment of the present invention.

[0040] Figure 4 This is a schematic cross-sectional view of the film structure of the HUD reflector prepared according to an embodiment of the present invention.

[0041] Explanation of reference numerals in the attached figures: 100, Vacuum coating system; 1, Substrate; 2, First metal layer; 3, Gradient transition layer; 4, Organic protective layer; 5, Second metal layer; 10, First sputtering chamber; 11, First sputtering source; 20, CVD chamber; 21, Gas supply unit; 22, Radio frequency power supply; 30, First vacuum transmission channel; 40, Transmission mechanism; 41, Mobile clamping carrier; 42, Guide rail; 50, Exhaust unit; 60, Controller; 70, Gas analyzer; 80, Second vacuum transmission channel; 90, Second sputtering chamber; 91, Second sputtering source. Detailed Implementation

[0042] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0043] Reference Figures 1 to 3This invention provides a vacuum coating system 100, primarily used for continuously preparing composite films with high adhesion on substrates 1, such as aspherical mirror substrates for head-up display systems. The vacuum coating system 100 comprises, in series along the transport direction of the substrate 1, a first sputtering chamber 10, a first vacuum transport channel 30, a CVD chamber 20, a second vacuum transport channel 80, and a second sputtering chamber 90. The chambers and channels form a physically connected whole, eliminating the need for mechanical gate valves between adjacent chambers to achieve continuous operation. This architecture eliminates particulate contamination sources caused by frequent valve opening and closing, ensuring... Figure 4 The membrane interface shown has high cleanliness.

[0044] Reference Figure 3 To achieve precise coordination of the entire process, the vacuum coating system 100 is equipped with a controller 60 as its control core. The controller 60 is electrically connected to a transport mechanism 40 that performs the task of transporting the substrate 1, a first sputtering source 11 responsible for depositing the first metal layer 2, a second sputtering source 91 responsible for depositing the second metal layer 5, a gas supply unit 21 for providing CVD reaction gases, a radio frequency power supply 22 for exciting plasma, an exhaust unit 50 responsible for maintaining the chamber vacuum and removing residual gas, and a gas analyzer 70 for real-time component monitoring. Through this electrical control architecture, the controller 60 can coordinate the movement speed of the substrate 1, the pressure of each chamber, and the operating status of the energy components in real time.

[0045] In this embodiment, the transfer mechanism 40 enables precise horizontal movement and switching of the substrate 1 between various stations. The transfer mechanism 40 includes a guide rail 42 horizontally penetrating the first sputtering chamber 10, the first vacuum transfer channel 30, the CVD chamber 20, the second vacuum transfer channel 80, and the second sputtering chamber 90, and a movable clamping carrier 41 slidably mounted on the guide rail 42. In this embodiment, the surface of the guide rail 42 is machined with a precision limiting groove, and the slider portion of the movable clamping carrier 41 is slidably embedded within the limiting groove. Due to the physical constraint of the limiting groove, the movable clamping carrier 41 is strictly restricted to a single horizontal degree of freedom during long-distance movement, ensuring that the center of mass of the substrate 1 remains within the same horizontal plane throughout the entire process from entering the system to completing deposition, thus guaranteeing the absolute stability of the gap between the substrate 1 and the inner walls of the first vacuum transfer channel 30 and the second vacuum transfer channel 80.

[0046] Regarding the power supply and control of the mobile clamping carrier 41, in this embodiment, two insulated copper conductive slide bars are fixed parallel to each other along the length of the side of the guide rail 42, and a spring-loaded conductive contact is disposed on the mobile clamping carrier 41 to slide in contact with the conductive slide bars. The low-voltage DC power output by the controller 60 is loaded through the conductive slide bars and transmitted to the inside of the mobile clamping carrier 41 via the sliding contact. In terms of data interaction, this embodiment adopts power line carrier modulation technology to superimpose the high-frequency control signal on the DC current of the conductive slide bars to realize bidirectional wireless communication between the controller 60 and the mobile clamping carrier 41. The mobile clamping carrier 41 is equipped with a micro actuator (such as a mechanical gripper) to lock or release the edge of the substrate 1 according to the command, ensuring that the substrate 1 does not move relative to the mobile clamping carrier 41 during horizontal switching.

[0047] To prevent metal particles sputtered from the first sputtering source 11 and the second sputtering source 91, as well as organic deposits generated in the CVD chamber 20, from covering the copper conductive slide, a protective shield with a "door"-shaped cross-section is provided on the guide rail 42. The protective shield covers the copper conductive slide above and to the outside, forming a labyrinthine sealed gap with the slide. The spring-loaded conductive contact on the movable clamping carrier 41 extends into the protective shield through the labyrinthine sealed gap and slides in contact with the copper conductive slide. This structure cleverly utilizes the shadowing effect in a vacuum environment, where sputtered particles and CVD reaction precursors mainly move in straight lines or restricted directions, unable to bypass the labyrinthine path of the protective shield and deposit on the contact surface of the copper conductive slide. Furthermore, the guide rail 42 is preferably located in the side region at the bottom of each chamber, away from the vertical projection range of the first sputtering source 11 and the gas supply unit 21, thereby further reducing the impact of the coating material on conductivity.

[0048] The specific workflow of the vacuum coating method in this embodiment is as follows:

[0049] Execution step S1:

[0050] The controller 60 instructs the movable clamping carrier 41 to bring the substrate 1 into the first sputtering chamber 10. The controller 60 adjusts the background pressure of the first sputtering chamber 10 to a first pressure (e.g., 0.5 Pa). At this time, the first sputtering source 11 is turned on, and a first metal layer 2 with a thickness of approximately 100 nm is deposited on the surface of the substrate 1. In this embodiment, the first metal layer 2 is preferably an aluminum reflective layer deposited using a DC power supply and an aluminum target.

[0051] Execute step S2:

[0052] The controller 60 drives the movable clamping carrier 41 to move the substrate 1 from the first sputtering chamber 10 to the CVD chamber 20 via the first vacuum transfer channel 30. For example... Figure 2 As shown, when the substrate 1 is located inside the first vacuum transmission channel 30, the effective ventilation cross-section of the first vacuum transmission channel 30 is reduced due to the fit between the substrate 1 and the inner wall of the first vacuum transmission channel 30, thereby establishing a flow resistance throttling zone. To ensure the reliability of the throttling effect, this embodiment strictly controls the parameters to satisfy the following formula:

[0053] Wherein, L is the length of the substrate 1 along the transmission direction, in mm; v is the moving speed of the substrate 1 when it passes through the first vacuum transmission channel 30, in mm / s; H is the internal cross-sectional height of the first vacuum transmission channel 30, in mm; and h is the thickness of the substrate 1 perpendicular to the transmission direction, in mm.

[0054] For example, let's set L to 200 mm, v to 20 mm / s, H to 31 mm, and h to 30 mm. Substituting these values ​​into the calculation, we get 0.1 mm / s. This proportional relationship ensures that, without the installation of a physical gate valve, the flow resistance throttling zone can still maintain a sufficient pressure differential to form a reverse jet, while simultaneously limiting airflow leakage to a safe range.

[0055] Execute step S3:

[0056] While maintaining the flow resistance throttling zone, the gas supply unit 21 injects chemical vapor deposition precursor gas (such as HMDSO) into the CVD chamber 20, and turns on the radio frequency power supply 22 to generate active plasma. In this embodiment, the radio frequency power supply 22 acts as a capacitively coupled plasma source, establishing a high-frequency alternating electric field in space by applying a high-frequency alternating voltage (such as 13.56MHz) between the electrodes in the CVD chamber 20. Random electrons in the electric field are accelerated and undergo inelastic collisions with the injected chemical vapor deposition precursor gas molecules, causing them to ionize and fragment, forming an active plasma containing a large number of active free radicals, electrons, and ions. At this time, the pressure in the CVD chamber 20 rises to a second pressure (e.g., 2.5Pa) higher than the first pressure.

[0057] During this process, the gas analyzer 70 monitors the partial pressure signal of the organic gas in the first sputtering chamber 10 in real time. Since chemical vapor deposition precursor gas is being injected and a reverse jet is being generated, once the organic gas partial pressure signal exceeds a preset safety threshold (e.g., ...), the gas analyzer will detect the presence of the organic gas. The controller 60 immediately and forcibly interrupts the injection of chemical vapor deposition precursor gas into the CVD chamber 20 and issues an alarm to prevent active organic components from entering the first sputtering chamber 10 and poisoning the target material of the first sputtering source 11. The active plasma, driven by the pressure gradient on both sides of the flow resistance throttling region, impacts the first metal layer 2 via the first vacuum transmission channel 30, constructing a metal-organic hybrid gradient transition layer 3 in situ at the interface of the first metal layer 2. Figure 4 As shown, the gradient transition layer 3 significantly enhances the bonding force between the metal and the organic layer by forming a bonding structure such as Al-O-Si-C or Nb-Si-C, effectively solving the problem of film blistering.

[0058] Execute step S4:

[0059] After the substrate 1 has completely entered the CVD chamber 20 through the first vacuum transmission channel 30, the reverse jet terminates due to the disappearance of the flow resistance throttling zone. At this time, the controller 60 instructs the exhaust unit 50 to adjust the pumping speed, adjusting the process gas pressure in the CVD chamber 20 to a third pressure (e.g., 0.4 Pa), and depositing an organic protective layer 4 on the surface of the gradient transition layer 3.

[0060] In this embodiment, the third pressure is less than or equal to the first pressure. This allows the pressure difference driving force diffusing from the CVD chamber 20 to the first sputtering chamber 10 to be fundamentally eliminated, and even the formation of a reverse pressure gradient, during the deposition stage after the substrate 1 leaves the first vacuum transfer channel 30, by lowering the pressure in the CVD chamber 20 to a level no higher than the pressure in the first sputtering chamber 10. This effectively prevents residual chemical vapor deposition precursor gas from flowing back and diffusing into the first sputtering chamber 10, thereby ensuring the cleanliness of the target surface of the first sputtering source 11 without relying on physical gate valves, preventing target poisoning, and guaranteeing the continuous stability of the first metal layer 2 deposition process.

[0061] Execute step S5:

[0062] The movable clamping carrier 41 moves the substrate 1 horizontally through the second vacuum transfer channel 80 into the second sputtering chamber 90. A second sputtering source 91 (such as an intermediate frequency power supply and a niobium target) deposits a second metal layer 5 on the surface of the organic protective layer 4. In this embodiment, the second metal layer 5 is preferably a niobium layer. This second metal layer 5, together with the underlying organic protective layer 4 and the first metal layer 2, forms a multilayer optical coherence structure, further enhancing the reflectivity of the HUD mirror in a specific wavelength band. Moreover, as the outermost hard inorganic film, the second metal layer 5 provides additional physical shielding for the underlying organic protective layer 4, enhancing the film system's resistance to environmental erosion and chemical corrosion.

[0063] Execute step S6:

[0064] After deposition is completed, the exhaust unit 50 removes residual gas from the CVD chamber 20 until the background pressure of the CVD chamber 20 is lower than the cleaning threshold before the next cycle can begin. This invention achieves high-cleanliness and high-adhesion composite coating operations by precisely controlling the horizontal movement of the transmission mechanism 40 in conjunction with the dynamic air pressure adjustment of the process chamber.

[0065] This specification and accompanying drawings are merely illustrative examples of this application and are intended to cover any and all modifications, variations, combinations, or equivalents within the scope of this application. Clearly, those skilled in the art can make various alterations and modifications to this application without departing from its scope. Therefore, if such modifications and modifications fall within the scope of this application and its equivalents, this application intends to include such modifications and modifications.

Claims

1. A vacuum coating method, characterized in that, The vacuum coating system (100) includes a first sputtering chamber (10) and a CVD chamber (20) connected by a first vacuum transfer channel (30), and the vacuum coating method includes: S1. Place the substrate (1) to be coated in the first sputtering chamber (10), adjust the pressure of the first sputtering chamber (10) to the first pressure, and deposit the first metal layer on the surface of the substrate (1); S2, drive the substrate (1) to move from the first sputtering chamber (10) to the CVD chamber (20) via the first vacuum transmission channel (30); when the substrate (1) is located in the first vacuum transmission channel (30), the effective ventilation section of the first vacuum transmission channel (30) is reduced by the substrate (1) to establish a flow resistance throttling zone; S3. While maintaining the flow resistance throttling zone, chemical vapor deposition precursor gas is injected into the CVD chamber (20) to raise the pressure in the CVD chamber (20) to a second pressure higher than the first pressure, and the chemical vapor deposition precursor gas is excited to generate active plasma; using the pressure gradient formed on both sides of the flow resistance throttling zone, the active plasma in the CVD chamber (20) is driven to form a reverse jet pointing towards the first sputtering chamber (10) via the first vacuum transmission channel (30), and the reverse jet performs an in-situ hybridization reaction on the first metal layer on the surface of the substrate (1) located in the first vacuum transmission channel (30), thereby constructing a metal-organic hybrid gradient transition layer in-situ on the surface of the first metal layer; S4. After the substrate (1) is completely transferred into the CVD chamber (20), the reverse jet is terminated due to the disappearance of the flow resistance throttling zone. Then, the pressure of the CVD chamber (20) is adjusted to a third pressure that is less than or equal to the first pressure, and an organic protective layer is deposited on the surface of the gradient transition layer.

2. The vacuum coating method according to claim 1, characterized in that, After step S4, step S5 is also included: driving the substrate (1) from the CVD chamber (20) to the second sputtering chamber (90) via the second vacuum transfer channel (80) to deposit a second metal layer on the surface of the organic protective layer.

3. The vacuum coating method according to claim 2, characterized in that, The CVD chamber (20) is connected to an exhaust unit (50); After step S5, step S6 is also included: after the second metal layer is deposited on the substrate (1), the exhaust unit (50) is controlled to operate to extract the residual chemical vapor deposition precursor gas in the CVD chamber (20) until the background pressure in the CVD chamber (20) is lower than the preset cleaning threshold, and then the next substrate is transferred.

4. The vacuum coating method according to claim 1, characterized in that, The first sputtering chamber (10) is connected to a gas analyzer (70); in step S3, the gas analyzer (70) monitors the partial pressure signal of organic gas in the first sputtering chamber (10) in real time. When the partial pressure signal of organic gas exceeds the preset safety threshold, the injection of chemical vapor deposition precursor gas into the CVD chamber (20) is forcibly interrupted and an alarm is triggered.

5. The vacuum coating method according to claim 1, characterized in that, The first metal layer is an aluminum layer or a niobium layer; the chemical vapor deposition precursor gas is selected from hexamethyldisiloxane or hexamethyldisilazane; the gradient transition layer contains a bonded structure composed of aluminum, oxygen, silicon and carbon elements, or contains a bonded structure composed of niobium, silicon and carbon elements.

6. A vacuum coating system (100), characterized in that, include: A first sputtering chamber (10) is configured with a first sputtering source (11) for depositing a first metal layer on the surface of the substrate (1). The CVD chamber (20) is equipped with a gas supply unit (21) for injecting chemical vapor deposition precursor gas into the CVD chamber (20), and a radio frequency power supply (22) for exciting the chemical vapor deposition precursor gas to generate active plasma. The first vacuum transmission channel (30) connects the first sputtering chamber (10) and the CVD chamber (20). The transfer mechanism (40) is configured to hold the substrate (1) and move the substrate (1) from the first sputtering chamber (10) to the CVD chamber (20) via the first vacuum transfer channel (30); and The controller (60) is electrically connected to the first sputtering source (11), the gas supply unit (21), the radio frequency power supply (22) and the transmission mechanism (40), respectively; The controller (60) is configured to perform the vacuum coating method as described in any one of claims 1 to 5.

7. The vacuum coating system (100) according to claim 6, characterized in that, The vacuum coating system (100) further includes a second sputtering chamber (90) connected to the CVD chamber (20) via a second vacuum transmission channel (80), and the second sputtering chamber (90) is equipped with a second sputtering source (91). The first sputtering chamber (10), the first vacuum transmission channel (30), the CVD chamber (20), the second vacuum transmission channel (80) and the second sputtering chamber (90) are connected sequentially along the transmission direction of the substrate (1); The first sputtering source (11) includes a DC power supply and an aluminum target; the radio frequency power supply (22) is a capacitively coupled plasma source; and the second sputtering source (91) includes a medium frequency power supply and a niobium target.

8. The vacuum coating system (100) according to claim 7, characterized in that, The transmission mechanism (40) includes: The guide rail (42) passes sequentially through the first sputtering chamber (10), the first vacuum transmission channel (30), the CVD chamber (20), the second vacuum transmission channel (80), and the second sputtering chamber (90). A movable clamping carrier (41) is slidably disposed on the guide rail (42) for clamping the substrate (1) and moving it in a controlled manner along the guide rail (42).

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