Method for processing surface of workpiece in cavity and semiconductor equipment

Abstract

The invention provides a method for processing the surface of a workpiece in a cavity and semiconductor equipment, and relates to the technical field of semiconductors. Due to the design of the concave-convex surface, the surface area of the workpiece is increased, the forming time and thickness of a by-product coating before cracking are improved, and the technological process of IBS stable production can be continued to a certain extent. Through the design of roughening treatment on the concave-convex surface, the combination stability of the by-product coating and the surface of the workpiece is further enhanced, and therefore it is guaranteed that the by-product coating cannot easily form particle pollution. The dissolvable thin film layer is prepared on the roughened concave-convex surface, the by-product coating can be formed on the dissolvable thin film layer, and the by-product coating can be removed from the surface of the workpiece by dissolving the thin film layer when the workpiece is cleaned. According to the technical scheme, the by-product plating layer formed on the surface of the workpiece in the cavity in the IBS process can be effectively stabilized, and the by-product plating layer can be easily removed.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a method for processing the surface of a workpiece inside a cavity and a semiconductor device. Background Technology

[0002] In the processes of ion beam etching (IBE) and ion beam shaping (IBS), which evolved from IBE, while the ion beam treats the chip structure surface, some ion beams bombard and sputter the internal surface of the IBS chamber. This results in byproduct coatings of varying thicknesses and compositions on different parts of the workpiece surface within the IBS chamber. The thickness of these byproduct coatings gradually increases as the IBS process progresses. Because the byproduct coatings and the workpiece surface within the IBS chamber are made of different materials, have different elastic moduli, and different thermal expansion and contraction characteristics, structural stress is formed at the contact interface between the workpiece surface and the byproduct coatings. This structural stress increases with the thickness of the byproduct coatings. When the structural stress at the contact interface exceeds the bonding force between the byproduct coating and the workpiece surface, or due to differences in the volumetric expansion of different materials caused by temperature changes, the byproduct coatings may crack and peel off along the contact interface, forming particulate contamination. This severely affects the stability of the IBS process.

[0003] Therefore, how to improve the stability of the IBS process and simplify the cleaning process of by-product coatings on the workpiece surface are technical problems that urgently need to be solved by those skilled in the art. Summary of the Invention

[0004] In view of the above problems, this application provides a method and semiconductor apparatus for processing the surface of a workpiece within a cavity, which can effectively stabilize the by-product plating layer formed on the surface of the workpiece within the cavity during the IBS process, and can also easily remove the by-product plating layer. The specific solution is as follows:

[0005] The first aspect of this application provides a method for processing the surface of a workpiece inside a cavity, the method comprising:

[0006] The surface of the workpiece is treated to create an uneven surface;

[0007] The uneven surface is roughened.

[0008] A soluble thin film layer is prepared on the roughened, uneven surface.

[0009] Preferably, in the above-mentioned method for processing the surface of a workpiece within a cavity, the process of forming an uneven surface on the workpiece surface includes:

[0010] The uneven surface is formed by processing the surface of the workpiece using laser processing.

[0011] Preferably, in the above-mentioned method for processing the surface of a workpiece within a cavity, the process of forming an uneven surface on the workpiece surface includes:

[0012] The uneven surface is formed by embossing the surface of the workpiece.

[0013] Preferably, in the above-mentioned method for processing the surface of a workpiece within a cavity, the process of forming an uneven surface on the workpiece surface includes:

[0014] The uneven surface is formed by processing the surface of the workpiece through machining methods such as turning.

[0015] Preferably, in the above-described method for treating the surface of the workpiece inside the cavity, before roughening the surface, the method further includes:

[0016] The workpiece after the embossing process is further processed to eliminate the structural stress generated during the formation of the uneven surface.

[0017] Preferably, in the above-mentioned method for processing the surface of the workpiece in the cavity, the distance between adjacent concave and convex points on the concave and convex surfaces in the first direction is at least greater than 0.05 mm, or at least greater than 0.1 mm, or at least greater than 0.5 mm.

[0018] The first direction is perpendicular to the plane containing the surface of the workpiece.

[0019] Preferably, in the above-mentioned method for processing the surface of the workpiece within the cavity, the roughening treatment of the uneven surface includes:

[0020] The uneven surface is roughened by laser processing.

[0021] Preferably, in the above-mentioned method for processing the surface of the workpiece within the cavity, the roughening treatment of the uneven surface includes:

[0022] The uneven surface is roughened by surface sandblasting.

[0023] Preferably, in the above-mentioned method for treating the surface of the workpiece within the cavity, the roughness of the roughened surface is at least greater than 1 μm, or at least greater than 4 μm, or at least greater than 8 μm.

[0024] Preferably, in the above-described method for treating the surface of the workpiece within the cavity, the soluble thin film layer is a polymer thin film layer or a plastic thin film layer.

[0025] Preferably, in the above-mentioned method for treating the surface of the workpiece within the cavity, the soluble film layer is a polyvinyl chloride film layer, a vinyl chloride-vinyl acetate copolymer film layer, a polystyrene film layer, a polycarbonate film layer, an plexiglass film layer, or a cellulose acetate film layer.

[0026] Preferably, in the above-mentioned method for treating the surface of the workpiece within the cavity, the thickness of the soluble thin film layer is H; and the roughness of the roughened surface is Ra.

[0027] Where H < Ra.

[0028] Preferably, in the above-mentioned method for treating the surface of the workpiece inside the cavity, H = Ra / 2.

[0029] Preferably, in the above-mentioned method for treating the surface of the workpiece within the cavity, the step of preparing a soluble thin film layer on the roughened, uneven surface includes:

[0030] Select the material for preparing the soluble thin film layer;

[0031] Dissolve the material into a chemical liquid;

[0032] The chemical liquid is applied to the roughened, uneven surface and then cured to form the soluble thin film layer.

[0033] A second aspect of this application provides a semiconductor device, the semiconductor device including a chamber, wherein a workpiece is disposed within the chamber;

[0034] The surface of the workpiece is the surface after being treated by the process described in any of the above-mentioned methods for treating the surface of a workpiece inside a cavity.

[0035] Preferably, in the above-mentioned semiconductor equipment, the semiconductor equipment is a plasma etching equipment, an ion beam etching equipment, a PVD coating equipment, a CVD coating equipment, or an ion implantation equipment.

[0036] By employing the above technical solution, this application provides a method for treating the surface of a workpiece within a cavity and a semiconductor device. The design of the uneven surface increases the surface area of ​​the workpiece, improving the formation time and thickness of the by-product plating layer before it breaks, thus extending the stable production process of IBS to a certain extent. The roughening treatment of the uneven surface further enhances the bonding stability between the by-product plating layer and the workpiece surface. This ensures that the by-product plating layer will not easily break and / or peel off, leading to particulate contamination. Since the roughened uneven surface ensures stable bonding between the by-product plating layer and the workpiece surface, to simplify the cleaning process of the by-product plating layer on the workpiece surface, a soluble thin film layer is prepared on the roughened uneven surface. The by-product plating layer forms on this soluble thin film layer, which can be dissolved by a chemical solution, thereby removing the by-product plating layer from the workpiece surface. In other words, this technical solution can effectively stabilize the by-product plating layer formed on the surface of the workpiece within the cavity during the IBS process and can also easily remove the by-product plating layer. Attached Figure Description

[0037] The above and other features, advantages, and aspects of the embodiments of this disclosure will become more apparent from the accompanying drawings and the following detailed description. Throughout the drawings, the same or similar reference numerals denote the same or similar elements. It should be understood that the drawings are schematic, and the originals and elements are not necessarily drawn to scale.

[0038] Figure 1 This is a schematic flowchart illustrating a method for processing the surface of a workpiece inside a cavity, as provided in an embodiment of the present invention.

[0039] Figures 2-5 for Figure 1 A partial structural diagram corresponding to the processing method shown;

[0040] Figure 6 This is a schematic diagram illustrating the adhesion of a byproduct coating to the surface of a workpiece, as provided in an embodiment of the present invention.

[0041] Figure 7 This is a schematic diagram illustrating the principle of preparing a soluble thin film layer on a roughened, uneven surface, as provided in an embodiment of the present invention. Detailed Implementation

[0042] The embodiments of this application are described below with reference to the accompanying drawings. The terminology used in the implementation section of this application is only for explaining specific embodiments and is not intended to limit the application. Those skilled in the art will recognize that, with technological advancements and the emergence of new scenarios, the technical solutions provided in the embodiments of this application are also applicable to similar technical problems.

[0043] The Central Processing Unit (CPU), composed of semiconductor chips in an integrated circuit structure, is widely used in various everyday products such as medical devices, automobiles, and mobile phones, playing an increasingly important role in people's social lives. With the reduction of CPU feature size, the reduction of focal depth in photolithography equipment, and the trend towards 3D stacking of chip structures during the manufacturing process of very large-scale integrated circuits, more stringent requirements and challenges have been placed on the microscopic correction and planarization processes of the wafer chip morphology that form the CPU.

[0044] Currently, for devices with a minimum feature size of 0.35 micrometers or less, Chemical Mechanical Polishing (CMP) is the mainstream technology for achieving silicon wafer planarization. However, with the development of advanced technology nodes (above 22nm) and the emergence of new integration processes, such as the replacement of metal gates (RMGs), self-aligned contacts (SACs), and polysilicon aperture CMP, more challenges are posed to the thickness and morphological uniformity of chip structures (up to the nanometer or even angstrom level). Improper process control in CMP contact processing can lead to substrate defects, and particulate contamination induced by the polishing slurry, limiting its application and reducing yield. Furthermore, CMP technology currently cannot achieve high-precision planarization control at the nanometer or angstrom level, making it difficult to perform highly uniform and precise machining of replacement metal gates (RMGs) for Fin-FET nodes. These inherent drawbacks of CMP processes limit its application in advanced manufacturing processes where chip sizes are constantly shrinking.

[0045] In the past, ion beam shaping (IBS) techniques based on ion beam etching (IBE) and flexible shaping etching (FSE) for chip structures, such as micromachining and planarization, have provided new opportunities for precise control of chip thickness at the nanometer scale as the latest development in dry etching technology. This technology uses an ion source to bombard the wafer surface with neutral gas ions of a certain energy, removing or selectively removing surface material through physical sputtering. By optimizing the ion beam (energy, beam current density, and other parameters) during the process, the movement of colliding ions can be effectively controlled in the IBS process, achieving ultra-precision machining at the atomic level. By controlling the ion beam pulled out by the ion source during IBE / FSE, the incident angle of the bombarding ions can be adjusted, giving IBS a unique advantage in directional etching for surface micromachining, thereby achieving different etching rates on specific material surfaces at different incident ion angles. These characteristics enable IBS based on IBE / FSE technology to modify the surface roughness of chip patterns, truly achieving nanometer-level cross-wafer uniformity and flatness control (3σ < 15 Å within a 300mm wafer), meeting the stringent in-wafer uniformity targets of Fin-Fet and even GAA (Gate-All-Around) technologies. Furthermore, by adjusting the ion beam energy and angle, IBS can correct the shape and arrangement of EUV-generated chip patterns during EUV (Extreme Ultraviolet) patterning processes in chip manufacturing, replacing multiple EUV patterning processes, reducing the number of double or multiple EUV exposures, simplifying the processing flow of small-size, high-precision chips, and improving production efficiency. Therefore, IBE and FSE technologies are finding increasingly important applications in advanced manufacturing processes such as the miniaturization of advanced logic chip process nodes and the trend towards 3D memory chips.

[0046] To improve the stability of the IBS process and simplify the workpiece surface cleaning process, this application provides a method and semiconductor equipment for treating the workpiece surface inside the cavity. Based on advanced surface modification processes and a simplified and effective surface cleaning method, it extends the service life of the workpiece inside the cavity, stabilizes the IBS process, improves chip production efficiency, and reduces costs.

[0047] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0048] refer to Figure 1 , Figure 1This is a schematic flowchart illustrating a method for processing the surface of a workpiece inside a cavity, as provided in an embodiment of the present invention. The method for processing the surface of a workpiece inside a cavity, as provided in this embodiment of the present invention, includes:

[0049] S101: As Figure 2 and Figure 3 As shown, the surface of the workpiece is processed to form an uneven surface.

[0050] Specifically, in this step, the workpiece surface can be processed using laser processing, embossing, or machining to form the uneven surface. This uneven surface can be achieved with a specific morphology by adjusting and setting the processing parameters. For example... Figure 2 As shown, the surface of the workpiece is a flat surface 10; as Figure 3 As shown, the surface of the workpiece is a rough surface 11.

[0051] The process of forming uneven surfaces 11 using laser processing is as follows: by adjusting the power and wavelength, a laser beam can precisely etch patterns of varying depths onto the surface of any material. Furthermore, one of the characteristics or advantages of using a laser beam to process uneven surfaces on workpieces within a cavity is that the laser beam can be used to process the surface of some large workpieces with complex surface shapes.

[0052] The process of embossing to create a raised or recessed surface 11 involves pressing a mold with a special patterned surface onto the material surface under specific pressure and temperature conditions. This process is commonly used for embossing food, paper, and plastic film surfaces. Further embossing can also be used for surface forming of some thin sheet metal components.

[0053] In this embodiment of the invention, the uneven surface 11 is preferably formed by embossing. This method can be used to press and generate an uneven surface on the surface of workpieces in the cavity of aluminum alloy, titanium alloy and stainless steel sheet by preferred pressure and temperature.

[0054] The process of forming uneven surfaces 11 by machining is as follows: by using cutting heads of different shapes and adjusting the spacing between cutting paths, cutting patterns of varying depths can be precisely engraved on the surface of any material.

[0055] In this embodiment of the invention, the uneven surface 11 is preferably formed by machining. This method can be used to cut and generate an uneven surface on the surface of a workpiece in a cavity, such as aluminum alloy, titanium alloy, or stainless steel, by selecting a cutting tool and cutting process conditions.

[0056] In an optional embodiment of the present invention, the distance between adjacent concave and convex points on the concave-convex surface 11 in a first direction is at least greater than 0.05 mm, or at least greater than 0.1 mm, or at least greater than 0.5 mm; the first direction is perpendicular to the plane on which the workpiece surface is located.

[0057] In other words, in this embodiment of the invention, the amplitude of the undulations on the uneven surface 11 is at least greater than 0.05 mm. Depending on the shape and material type of the workpiece inside the IBS cavity, and the IBS process conditions, optionally, the amplitude of the undulations on the uneven surface 11 can also be at least greater than 0.1 mm; under more optimized optional conditions, the amplitude of the undulations on the uneven surface 11 can also be at least greater than 0.5 mm.

[0058] In an optional embodiment of the present invention, the method for treating the surface of the workpiece inside the cavity before roughening further includes:

[0059] The workpiece after the embossing process is processed to eliminate the structural stress generated when the uneven surface 11 is formed.

[0060] Specifically, in this embodiment of the invention, in order to stabilize the undulating pattern generated on the surface of the metal material by embossing, after the embossing is completed, an appropriate heating temperature and holding time can be selected according to the material being embossed and the degree of deformation of the undulation. The structural stress generated when the embossing is formed can be completely removed by annealing heating and other treatments, thereby stabilizing the undulating surface 11 and improving the stability of the undulating surface 11.

[0061] The uneven surface 11 created by treating the workpiece surface effectively increases the surface area of ​​the workpiece within the chamber, improving the formation time and thickness of the by-product coating before it cracks. For specific IBS processes, this can, to some extent, maintain stable IBS production. Furthermore, compared to methods where the by-product film is attached to a flat surface, attaching the by-product film to the uneven surface significantly alters the macroscopic stress of the two-dimensional planar distribution of the by-product film, reducing the tendency for the by-product film to crack due to temperature changes during the IBS process. This ensures that the by-product coating does not easily form particulate contamination, stabilizing the chamber environment during the IBS process.

[0062] S102: As Figure 4 As shown, the uneven surface 11 is roughened.

[0063] Specifically, in this step, the uneven surface 11 can be roughened by laser processing or surface sandblasting to form an uneven roughened surface 12.

[0064] In this embodiment of the invention, the uneven surface 11 is further modified by roughening the uneven surface 11 of the workpiece to further enhance the bonding stability between the by-product coating and the workpiece surface in the cavity.

[0065] In this embodiment of the invention, surface roughening is organically combined with surface uneven processing, so that the workpiece surface becomes an uneven roughened surface 12, thereby enhancing the structural stability of the by-product coating generated on the workpiece surface in the cavity during the IBS process.

[0066] Based on the scheme of roughening the uneven surface 11 by surface sandblasting to form an uneven roughened surface 12, the ceramic sand particles used include, but are not limited to, ceramic sand particles such as Al2O3, ZrO2, TiO2, or SiC. By selecting appropriate particle size, sand flow rate, power, and controllable number of uses, a roughness surface with a roughness of at least 1 μm, at least 4 μm, or at least 8 μm is formed on the surface of the workpiece in the cavity by sandblasting.

[0067] In this embodiment of the invention, the roughness of the roughened surface is preferably greater than 4 μm.

[0068] S103: As Figure 5 As shown, a soluble thin film layer is prepared on the roughened uneven surface.

[0069] Specifically, after steps S101 and S102, the roughened surface 12 formed on the workpiece surface helps improve the structural stability of the by-product coating and the tolerable thickness of the by-product coating during the IBS process cycle. However, the workpiece with the by-product coating, due to its roughened surface, exhibits stable adhesion between the by-product coating and the workpiece surface, which increases the difficulty of the subsequent periodic cleaning process to remove the by-product coating. Therefore, the next surface modification step in this embodiment is to prepare a thin film layer 13 that can be dissolved by certain chemical solutions on the roughened surface. For example... Figure 6 As shown, Figure 6 This is a schematic diagram illustrating a byproduct coating adhering to the surface of a workpiece according to an embodiment of the present invention. During the IBS process cycle, the byproduct coating 14 ultimately forms on a soluble thin film layer 13. This soluble thin film layer 13 can be dissolved by a chemical solution, thereby removing the byproduct coating 14 from the workpiece surface. The final effect is as follows: Figure 4 As shown.

[0070] In an optional embodiment of the present invention, the soluble film layer 13 is a polymer film layer or a plastic film layer.

[0071] Furthermore, the soluble film layer 13 is a polyvinyl chloride film layer, a vinyl chloride-vinyl acetate copolymer film layer, a polystyrene film layer, a polycarbonate film layer, an plexiglass film layer, or a cellulose acetate film layer.

[0072] In other words, based on its ability to be dissolved by acetone, the present invention can select to prepare polymer film layers or plastic film layers on the roughened uneven surface, such as polyvinyl chloride film layers, vinyl chloride-vinyl acetate copolymer film layers, polystyrene film layers, polycarbonate (PMMA) film layers, plexiglass film layers or cellulose acetate film layers.

[0073] In an optional embodiment of the present invention, the method for preparing a soluble thin film layer 13 on the roughened uneven surface can be as follows:

[0074] Select a material for preparing the soluble thin film layer; dissolve the material into a chemical liquid; coat the chemical liquid onto the roughened uneven surface and solidify to form the soluble thin film layer.

[0075] Specifically, in the embodiments of the present invention, reference is made to Figure 7 , Figure 7 This is a schematic diagram illustrating the principle of preparing a soluble thin film layer on a roughened, uneven surface according to an embodiment of the present invention. The selected polymer or plastic material can be pre-dissolved into a chemical liquid, and then applied to the roughened, uneven surface of the workpiece using methods such as spraying, dipping, brushing, spin coating, or sol-gel. Figure 7 As shown in (a), the solution is uniformly sprayed onto the roughened, uneven surface of the workpiece using a spraying method. Then, as... Figure 7 As shown in (b), a liquid coating is formed on the roughened surface of the workpiece by means of curing such as heating, ultraviolet light or infrared light.

[0076] In an optional embodiment of the present invention, the thickness of the soluble thin film layer 13 is H; the roughness of the roughened surface is Ra; wherein, H < Ra. Optionally, H = Ra / 2.

[0077] Specifically, in this embodiment of the invention, in order to maintain the roughened workpiece surface, the thickness of the soluble thin film layer 13 should not exceed the roughness of the roughened surface. For example, assuming the roughness of the roughened surface is 8 μm, the thickness of the subsequently formed soluble thin film layer 13 should be less than 8 μm. Preferably, in this embodiment of the invention, the thickness of the soluble thin film layer 13 is approximately half the roughness of the roughened surface.

[0078] In summary, the present invention provides a method for processing the surface of a workpiece within a cavity, which involves three steps of surface modification. The first step is to form an uneven surface 11. The second step is to further roughen the uneven surface to form an uneven roughened surface 12. The third step is to prepare a soluble thin film layer 13 on the roughened uneven surface.

[0079] After the surface-modified workpiece is installed in the IBS chamber, the roughened surface with its uneven texture can change the interfacial stress between the by-product plating layer 14 formed during the IBS process and the workpiece surface, reducing the two-dimensional stress formed on the surface of the planar component. Therefore, it can tolerate the deposition of a sufficiently thick by-product plating layer 14, or even a by-product plating layer 14 with an uneven thickness distribution, on the workpiece surface for a longer IBS process time without the by-product plating layer 14 peeling off. This can extend the stable production process of IBS to a certain extent, thereby extending the IBS process cycle time and improving the production efficiency of chip processing.

[0080] Because the workpiece surface is uneven, the byproduct coating 14 induced by the IBS process will be distributed in varying thicknesses at different locations on the surface of the soluble thin film layer 13. Typically, the thickness of the byproduct coating 14 induced by the IBS process will be greater than the thickness of the soluble thin film layer 13.

[0081] A workpiece with an IBS process byproduct coating 14 is placed in an ultrasonically vibrating container containing a chemical solution. The ultrasonic vibration causes the byproduct coating to crack, facilitating the chemical solution's access to the soluble thin film layer 13 through these cracks. Thus, while the chemical solution dissolves the soluble thin film layer 13, the ultrasonic vibration simultaneously causes both the soluble thin film layer 13 and the byproduct coating 14 to completely detach from the workpiece surface. For example, a workpiece with a PMMA-coated soluble thin film layer 13 may dissolve and detach in an ultrasonically vibrating acetone container, and so on.

[0082] This method of removing the byproduct coating 14 formed by the IBS process from the surface does not require other mechanical cleaning actions (such as sandblasting, friction, dry ice, etc.), avoids damage to the uneven surface, maintains the roughened surface characteristics, and allows the cleaned workpiece to be used to prepare a soluble thin film layer 13 and subsequently applied in the IBS process, thus extending the service life of the chamber workpiece.

[0083] In summary, this application, by applying advanced material surface modification methods, can effectively stabilize the byproduct coating 14 formed on the surface of the workpiece inside the cavity during the IBS process, effectively reduce particulate and trace element contamination during the IBS process, significantly improve the stability of the IBS process, extend the service life of the workpiece inside the cavity during the IBS process, and improve the production efficiency of IBS. The surface modification method for the workpiece inside the cavity provided by this application can conveniently and effectively remove the byproduct coating 14 on the surface of the workpiece inside the cavity through chemical cleaning. The workpiece cleaning process is safe, eliminates mechanical damage to the workpiece surface during cleaning, maintains the roughened surface characteristics, extends the service life of the workpiece inside the cavity, and reduces production costs.

[0084] Based on the above embodiments of the present invention, another embodiment of the present invention provides a semiconductor device, the semiconductor device including a chamber, wherein a workpiece is disposed within the chamber. The surface of the workpiece is a surface treated by the workpiece surface treatment method described in the above embodiments.

[0085] The semiconductor equipment mentioned includes plasma etching equipment, ion beam etching equipment, PVD coating equipment, CVD coating equipment, or ion implantation equipment, which improve the stability of different chip fabrication processes and increase production efficiency.

[0086] The present invention has provided a detailed description of a method for treating the surface of a workpiece within a cavity and a semiconductor device. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. A method for treating the surface of a workpiece within a cavity, characterized in that, The method for treating the surface of the workpiece inside the cavity includes: The surface of the workpiece is treated to create an uneven surface; The uneven surface is roughened. A soluble thin film layer is prepared on the roughened, uneven surface.

2. The method for treating the surface of a workpiece within a cavity according to claim 1, characterized in that, The process of treating the workpiece surface to form an uneven surface includes: The uneven surface is formed by processing the surface of the workpiece using laser processing.

3. The method for treating the surface of a workpiece within a cavity according to claim 1, characterized in that, The process of treating the workpiece surface to form an uneven surface includes: The uneven surface is formed by embossing the surface of the workpiece.

4. The method for treating the surface of a workpiece within a cavity according to claim 1, characterized in that, The process of treating the workpiece surface to form an uneven surface includes: The uneven surface is formed by processing the surface of the workpiece through mechanical machining.

5. The method for treating the surface of a workpiece within a cavity according to claim 3, characterized in that, Before roughening, the method for treating the surface of the workpiece inside the cavity further includes: The workpiece after the embossing process is further processed to eliminate the structural stress generated during the formation of the uneven surface.

6. The method for treating the surface of a workpiece within a cavity according to any one of claims 1-5, characterized in that, The distance between adjacent concave and convex points on the concave and convex surfaces in the first direction is at least greater than 0.05 mm, or at least greater than 0.1 mm, or at least greater than 0.5 mm. The first direction is perpendicular to the plane containing the surface of the workpiece.

7. The method for treating the surface of a workpiece within a cavity according to claim 1, characterized in that, The roughening treatment of the uneven surface includes: The uneven surface is roughened by laser processing.

8. The method for treating the surface of a workpiece within a cavity according to claim 1, characterized in that, The roughening treatment of the uneven surface includes: The uneven surface is roughened by surface sandblasting.

9. The method for treating the surface of a workpiece within a cavity according to any one of claims 1 or 7-8, characterized in that, The roughness of the roughened surface is at least greater than 1 μm, or at least greater than 4 μm, or at least greater than 8 μm.

10. The method for treating the surface of a workpiece within a cavity according to claim 1, characterized in that, The soluble film layer is a polymer film layer or a plastic film layer.

11. The method for treating the surface of a workpiece within a cavity according to claim 1, characterized in that, The soluble film layer is a polyvinyl chloride film layer, a vinyl chloride-vinyl acetate copolymer film layer, a polystyrene film layer, a polycarbonate film layer, an plexiglass film layer, or a cellulose acetate film layer.

12. The method for treating the surface of a workpiece within a cavity according to any one of claims 1 or 10-11, characterized in that, The thickness of the soluble thin film layer is H; the roughness of the roughened surface is Ra; where H < Ra.

13. The method for treating the surface of a workpiece within a cavity according to claim 12, characterized in that, H = Ra / 2.

14. The method for treating the surface of a workpiece within a cavity according to claim 1, characterized in that, The preparation of a soluble thin film layer on the roughened, uneven surface includes: Select the material for preparing the soluble thin film layer; Dissolve the material into a chemical liquid; The chemical liquid is applied to the roughened, uneven surface and then cured to form the soluble thin film layer.

15. A semiconductor device, characterized in that, The semiconductor device includes a chamber in which a workpiece is disposed; The surface of the workpiece is the surface after being treated by the method for treating the surface of a workpiece inside a cavity as described in any one of claims 1-14.

16. The semiconductor device according to claim 15, characterized in that, The semiconductor equipment is a plasma etching equipment, an ion beam etching equipment, a PVD coating equipment, a CVD coating equipment, or an ion implantation equipment.

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