Auxiliary ignition device and process chamber for plasma equipment

Abstract

The embodiment of the invention provides an auxiliary ignition device for plasma equipment and a process chamber, and the auxiliary ignition device comprises an electron beam generation device which is communicated with a gas inlet assembly structure and is used for generating an electron beam when being electrified, the electron beam enters a plasma chamber of the plasma equipment through an air inlet assembly structure; and the vacuum chamber surrounds the electron beam generating device, is fixed between the outer wall of the chamber and the air inlet assembly structure, and is used for sealing the electron beam generating device in the plasma chamber. According to the embodiment of the invention, the ignition speed of the plasma equipment can be increased and the ignition stability can be ensured.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and in particular to an auxiliary ignition device for a plasma device, a process chamber, and a semiconductor processing apparatus. Background Technology

[0002] In IC (integrated circuit) manufacturing processes, photoresist removal plays a crucial role. Plasma photoresist removal primarily involves the ionization of oxygen into oxygen atoms, free radicals, and ions under radio frequency (RF) radiation. These ions then react chemically with the photoresist, generating carbon monoxide, carbon dioxide, and water. The resulting products are then pumped away, achieving the goal of photoresist removal. In plasma photoresist removers, a significant potential difference is generated between the coil and the plasma. This potential difference accelerates ion bombardment of the dielectric window in the sheath region, leading to a reduction in the dielectric window's lifetime. To address this, a Faraday cage is added to the plasma photoresist remover to shield the coil's electric field and reduce capacitive coupling between the coil and the plasma. However, plasma photoresist removers with Faraday cages suffer from slow ignition speeds or even ignition difficulties. Summary of the Invention

[0003] In view of the above problems, embodiments of the present invention are proposed to provide an auxiliary ignition device for a plasma device, a process chamber, and a semiconductor process apparatus that overcome or at least partially solve the above problems.

[0004] To address the aforementioned problems, this invention discloses an auxiliary ignition device for a plasma device. The auxiliary ignition device is located between the outer wall of the plasma device's chamber and the air intake assembly structure. The auxiliary ignition device includes:

[0005] An electron beam generating device, connected to the air intake assembly structure, is used to generate an electron beam when energized, and the electron beam enters the plasma chamber of the plasma device through the air intake assembly structure;

[0006] A vacuum chamber, surrounding the electron beam generating device, is fixed between the outer wall of the chamber and the air intake assembly structure, and is used to seal the electron beam generating device in the plasma chamber.

[0007] Optionally, it also includes:

[0008] An accelerating electrode is disposed on the side of the electron beam generating device near the air intake assembly structure, and is used to accelerate the electron beam into the plasma chamber.

[0009] Optionally, it also includes:

[0010] A focusing electrode is disposed outside the output end of the electron beam generating device and is used to focus the electron beam.

[0011] Optionally, it also includes:

[0012] A conductive sheet, located between the output end of the electron beam generating device and the focusing electrode, is used to provide a channel for the electron beam to enter the plasma chamber.

[0013] Optionally, it also includes:

[0014] The fastener has one end connected to the vacuum chamber and the other end connected to the outer wall of the chamber to fix the vacuum chamber.

[0015] Optionally, it also includes:

[0016] The sealing ring is partially embedded in the vacuum chamber and is located on the side of the fixing member near the center of the vacuum chamber.

[0017] Optionally, it also includes:

[0018] An emitter power supply is connected to the emitter of the electron beam generating device and is used to drive the electron beam generating device.

[0019] Optionally, it also includes:

[0020] A high-voltage power supply is connected to the emitter of the electron beam generating device to accelerate the electron beam flow.

[0021] A process chamber includes: an auxiliary ignition device for plasma equipment as described above, an air intake assembly structure, a Faraday shield, a helical coil, and an outer wall of the chamber.

[0022] The auxiliary ignition device is located between the outer wall of the chamber and the air intake assembly structure; the Faraday shield is connected to the air intake assembly structure, and the spiral coil is located between the Faraday shield and the outer wall of the chamber.

[0023] Optionally, it also includes:

[0024] A plasma detection device is connected to the outer wall of the chamber and is used to detect the plasma state inside the chamber and generate a detection signal.

[0025] The processor, connected to the plasma detection device, is used to receive the detection signal, determine the plasma state in the chamber, and generate a control signal based on the plasma state in the chamber.

[0026] A controller, connected to the processor, is used to control the electron beam generating device according to the control signal.

[0027] A semiconductor process apparatus, characterized in that it comprises: a process chamber as described above, a matching unit connected to the process chamber, and an RF power supply connected to the matching unit;

[0028] The radio frequency power supply is used to emit radio frequency power, which is then delivered to the process chamber via the matching unit to generate plasma.

[0029] The embodiments of the present invention have the following advantages:

[0030] In this embodiment of the invention, a high-density electron beam is generated by an electron beam generating device to provide seed electrons for the plasma chamber of the plasma device. The plasma device can then ignite based on these seed electrons, improving the ignition speed and ensuring the stability of the ignition, thus solving the problem of difficult ignition for plasma devices with Faraday cylinders. Furthermore, the electron beam generating device is sealed within the plasma chamber through a vacuum chamber, achieving vacuum sealing. When the plasma chamber is evacuated, the electron beam generating device is also evacuated, eliminating the need for additional vacuum gauges or dry pumps, thereby improving the convenience of using the electron beam generating device in the plasma chamber. Attached Figure Description

[0031] Figure 1 This is a schematic diagram of an auxiliary ignition device for a plasma device according to the present invention;

[0032] Figure 2 This is a schematic diagram of an electron beam generating device according to the present invention;

[0033] Figure 3 This is a schematic diagram of a process chamber according to the present invention;

[0034] Figure 4 This is a flowchart of the startup steps for a process chamber according to the present invention;

[0035] Figure 5 This is a schematic diagram of a semiconductor process apparatus according to the present invention.

[0036] Explanation of reference numerals in the attached diagram: 1-Helical coil, 2-Quartz tube, 3-Faraday shield, 4-Inlet assembly, 5-Upper electrode aluminum cover plate, 6-Aluminum flow equalizer, 7-Outer wall of the chamber, 8-Heater, 9-Wafer, 10-Matching device, 11-RF power supply, 12-Vacuum chamber, 13-Focusing electrode, 14-Accelerating electrode, 15-Conductive sheet, 16-Electron beam generating device, 17-Emitter power supply, 18-High voltage power supply, 19-Controller, 20-Processor, 21-Plasma detection device, 22-Fixing component, 23-Sealing ring, 24-Tungsten wire, 25-Anode, 26-Electron shield. Detailed Implementation

[0037] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0038] Reference Figure 1 The diagram shows a schematic of an auxiliary ignition device for a plasma device according to the present invention. This auxiliary ignition device for a plasma device may specifically include the following components:

[0039] An electron beam generating device 16 is connected to the air intake assembly structure 4 and is used to generate an electron beam when energized. The electron beam enters the plasma chamber of the plasma device through the air intake assembly structure 4.

[0040] A vacuum chamber 12 surrounds the electron beam generating device 16 and is fixed between the outer wall 7 of the chamber and the air intake assembly structure 4, for sealing the electron beam generating device 16 in the plasma chamber.

[0041] An electron beam generating device 16 penetrates the outer wall 7 of the chamber and is connected to the gas inlet assembly structure 4. When energized, it can emit a high-energy, high-density electron beam. This beam enters the plasma chamber of the plasma device through the gas inlet assembly structure 4. The electron beam can penetrate the gas within the chamber, causing an electron avalanche. In this case, power is applied to the coil, enabling rapid ignition. It should be noted that an electron avalanche refers to the collision of electrons with gas molecules during high-speed motion, resulting in ionization and the formation of positive ions and electrons. These newly generated electrons continue to move at high speed and collide with ionized molecules, thus forming a rapid, avalanche-like growth.

[0042] A vacuum chamber 12 is added outside the electron beam generating device 16, that is, the vacuum chamber 12 surrounds the electron beam generating device 16. The vacuum chamber 12 is fixed between the outer wall 7 of the chamber and the air inlet assembly structure 4, sealing the electron beam generating device 16 in the plasma chamber. Since a passage is formed between the electron beam generating device 16 system and the plasma chamber, when the plasma chamber is evacuated, a vacuum will also be formed inside the vacuum chamber 12, so vacuum sealing can be achieved without the need to add a vacuum gauge or dry pump to the electron beam generating device 16.

[0043] The electron beam generating device 16 generates a high-density electron beam, providing seed electrons for the plasma chamber of the plasma device. The plasma device can then ignite based on these seed electrons, improving the ignition speed and ensuring ignition stability, thus solving the problem of difficult ignition for plasma devices with Faraday cylinders. Furthermore, the electron beam generating device 16 is sealed within the plasma chamber through the vacuum chamber 12, achieving a vacuum seal. When the plasma chamber is evacuated, the electron beam generating device 16 is also evacuated, eliminating the need for an additional vacuum gauge or dry pump, thus improving the convenience of using the electron beam generating device 16 in the plasma chamber.

[0044] Specifically, the electron beam generating device 16 can be referred to Figure 2 The electron beam generating device 16 includes: a tungsten filament 24, which emits electrons when powered; an anode 25 connected to the tungsten filament 24, which may be made of aluminum plate; a high voltage applied across the anode 25, which generates an electric field that provides kinetic energy to the electron beam generated by the tungsten filament 24; an internal focusing electrode 13, whose magnetic field can change the direction of the electron beam and thus confine the electrons; and an electron shield 26 enclosing the tungsten filament 24, the anode 25, and the internal focusing electrode 13. The electron shield 26 may be made of stainless steel.

[0045] Furthermore, the auxiliary ignition device may further include an accelerating electrode 14, disposed on the side of the electron beam generating device 16 near the air intake assembly structure 4, for accelerating the electron beam into the plasma chamber. By accelerating the electrons in the electron beam, it is ensured that the electron beam can quickly enter the plasma chamber.

[0046] Furthermore, the auxiliary ignition device may further include a focusing electrode 13, disposed outside the output end of the electron beam generating device 16, for focusing the electron beam. This focusing electrode 13 is an external focusing electrode, which focuses the electron beam generated by the electron beam generating device 16, preventing electron diffusion and ensuring the number of electrons entering the plasma chamber.

[0047] Furthermore, the auxiliary ignition device may further include a conductive sheet 15, located between the output end of the electron beam generating device 16 and the focusing electrode 13, for providing a channel for the electron beam to enter the plasma chamber. By providing the conductive sheet 15 between the output end of the electron beam generating device 16 and the focusing electrode 13, the electron beam passes through the conductive sheet 15, which provides a channel for electrons to enter the plasma chamber and excite the gas in the plasma chamber. The specific type of the conductive sheet 15 can be determined according to actual conditions, and this embodiment of the invention does not impose a specific limitation. For example, the conductive sheet 15 can be a metal sheet, and the electron beam is output to the plasma chamber by the breakdown of ions in the metal sheet.

[0048] Furthermore, the auxiliary ignition device may further include a fixing member 22, one end of which is connected to the vacuum chamber 12, and the other end of which is connected to the outer wall 7 of the chamber for fixing the vacuum chamber 12. Using the fixing member 22 to fix the vacuum chamber to the outer wall 7 allows the vacuum chamber 12 to also be fixed to the air intake assembly 4 of the plasma device, thereby ensuring that the electron beam from the electron beam generating device 16 can accurately enter the plasma chamber. The fixing member 22 can be a threaded connector, fixing the vacuum chamber 12 and the outer wall 7 based on the threads. For example, the fixing member 22 can be a vacuum screw, one end of which is connected to the vacuum chamber 12, and the other end to the outer wall 7; and the vacuum screw can be used in a vacuum environment to ensure connection stability.

[0049] Furthermore, the auxiliary ignition device may also include: a sealing ring 23, which is partially embedded in the vacuum chamber 12 and located on the side of the fixing member 22 near the center of the vacuum chamber 12; that is, the inner side of the fixing member 22 is sealed with the sealing ring 23 to ensure that the electron beam enters the plasma chamber without damaging the vacuum environment of the plasma chamber.

[0050] Furthermore, the auxiliary ignition device may further include: an emitter power supply 17, connected to the emitter of the electron beam generating device 16, for driving the electron beam generating device 16. The emitter power supply 17 can heat the emitter within the electron beam generating device 16. Under the action of thermal radiation, electrons overcome the surface potential barrier on the emitter and escape from the emitter surface to form an electron beam.

[0051] Furthermore, the auxiliary ignition device may also include a high-voltage power supply 18, connected to the emitter of the electron beam generating device 16, for accelerating the electron beam flow. Using the high-voltage power supply 18 to accelerate the electron beam allows electrons in the beam to be accelerated out of the electron beam generating device 16, preventing electrons from accumulating on the metal surface and hindering the escape of subsequent electrons.

[0052] Reference Figure 3 The diagram illustrates a process chamber according to the present invention. The process chamber may specifically include the following parts:

[0053] The aforementioned auxiliary ignition device, air intake assembly structure 4, Faraday shield 3, spiral coil 1, and outer wall of the cavity 7 used in plasma equipment

[0054] The auxiliary ignition device is located between the outer wall 7 of the chamber and the air intake assembly structure 4; the quartz tube 2 is connected to the air intake assembly structure 4; the Faraday shielding cylinder 3 is connected to the air intake assembly structure 4; and the spiral coil 1 is located between the Faraday shielding cylinder 3 and the outer wall 7 of the chamber.

[0055] Furthermore, a quartz tube 2 can be installed between the auxiliary ignition device located on the outer wall 7 of the chamber and the air intake assembly structure 4.

[0056] An auxiliary ignition device is positioned between the outer wall 7 of the chamber and the air intake assembly structure 4. During ignition, the auxiliary ignition device generates an electron beam, and the electrons in the electron beam, i.e., seed electrons, enter the quartz tube 2. Gas is introduced into the quartz tube 2, and power is fed in by the spiral coil 1, igniting and maintaining plasma discharge in the quartz tube 2 to form plasma particles for processing the wafer 9. A Faraday shield 3 is used to prevent the plasma from corroding the quartz tube 2.

[0057] Furthermore, the plasma device further includes:

[0058] Plasma detection device 21 is connected to the outer wall 7 of the chamber and is used to detect the plasma state inside the quartz tube 2 and generate a detection signal;

[0059] The processor 20, connected to the plasma detection device 21, is used to receive the detection signal, determine the plasma state inside the quartz tube 2, and generate a control signal based on the plasma state inside the quartz tube 2.

[0060] The controller 19, connected to the processor 20, is used to control the electron beam generating device 16 according to the control signal.

[0061] Reference Figure 4 The probe of the plasma detection device 21 is directly connected to the outer wall 7 of the chamber to detect the plasma state inside the quartz tube 2 and generate a detection signal. The presence or absence of plasma can be determined by measuring changes in spectral line intensity, thus generating a corresponding detection signal. The processor 20 is connected to the plasma detection device 21 and converts the detection signal detected by the plasma detection device 21 into a voltage or current signal. Based on the plasma state of the quartz tube 2, it determines the control content and converts it into a voltage or current signal, which is then sent to the controller 19. The controller 19 can then control the output of the electron beam generating device 16 according to the control signal. Specifically, it can amplify the control signal and send it to the electron beam generating device 16 to control its activation.

[0062] In practical applications, when ignition is successful, the intensity of the characteristic spectral lines of the ions detected by the plasma detection device 21 increases. This is processed by the processor 20, and the resulting voltage or current signal S changes from 0 to 1. When the voltage or current signal S is 1, the controller 19 controls the electron beam generating device 16 to shut down; otherwise, the electron beam generating device 16 remains on for several milliseconds until the controller 19 detects that the voltage or current signal S is 1. Figure 4As shown, firstly, process gas is introduced into the air intake assembly 4, and the electron beam generating device 16 is turned on. The electron beam generating device 16 can generate a high-energy-density electron beam in the chamber, providing seed electrons for subsequent ignition. Secondly, the plasma detection device 21 determines whether the ignition is successful by detecting the change in the intensity of the characteristic spectral line of O ions. When the intensity of the characteristic spectral line of O ions increases, the electrical signal S=1 received by the controller 19 indicates that the ignition is successful and the electron beam generating device 16 can be turned off. Otherwise, the electron beam generating device 16 continues to be turned on until the value of the electrical signal returned by the controller 19 is 1.

[0063] In the plasma equipment, after the gas pressure control is completed, radio frequency power is applied to the spiral coil 1, which ionizes the gas and excites the plasma. The quartz tube 2 serves as a capacitive coupling layer between the spiral coil 1 and the plasma, and the resulting capacitive high voltage can ignite and maintain the plasma discharge. The Faraday shield 3 is made of aluminum and is mainly used to reduce the potential of the plasma sheath region and extend the life of the quartz tube 2. The gas inlet assembly 4 is used for central gas inlet. The upper electrode aluminum cover plate 5 has water inside for cooling. The aluminum flow equalizer 6 is mainly used to reduce charged ions and equalize the flow, so that the uniformity of the flow field on the surface of the wafer 9 is optimized, thereby ensuring the uniformity of the etching of the wafer 9 and reducing damage to the wafer surface. The outer wall of the chamber 7 is used to shield the electromagnetic field and prevent the electromagnetic field from radiating outside the machine. The heater 8 is used to place the wafer 9.

[0064] Specifically, the auxiliary ignition device includes:

[0065] An electron beam generating device 16 penetrates the outer wall 7 of the chamber and is connected to the air intake assembly structure 4. It is used to generate an electron beam when energized, and the electron beam enters the plasma chamber of the plasma device through the air intake assembly structure 4.

[0066] A vacuum chamber 12 surrounds the electron beam generating device 16 and is fixed between the outer wall 7 of the chamber and the air intake assembly structure 4, for sealing the electron beam generating device 16 in the plasma chamber.

[0067] Optionally, it also includes:

[0068] Accelerating electrode 14 is disposed on the side of the electron beam generating device 16 near the air intake assembly structure 4, and is used to accelerate the electron beam into the plasma chamber.

[0069] Optionally, it also includes:

[0070] The focusing electrode 13 is disposed outside the output end of the electron beam generating device 16 and is used to focus the electron beam.

[0071] Optionally, it also includes:

[0072] The conductive sheet 15 is located between the output end of the electron beam generating device 16 and the focusing electrode 13, and is used to provide a channel for the electron beam to enter the plasma chamber.

[0073] Optionally, it also includes:

[0074] The fastener 22 has one end connected to the vacuum chamber 12 and the other end connected to the outer wall 7 of the chamber for fixing the vacuum chamber 12.

[0075] Optionally, it also includes:

[0076] The sealing ring 23 is partially embedded in the vacuum chamber 12 and is located on the side of the fixing member 22 near the center of the vacuum chamber 12.

[0077] Optionally, it also includes:

[0078] The emitter power supply 17 is connected to the emitter of the electron beam generating device 16 and is used to drive the electron beam generating device 16.

[0079] Optionally, it also includes:

[0080] A high-voltage power supply 18 is connected to the emitter of the electron beam generating device 16 to accelerate the flow of the electron beam.

[0081] Reference Figure 5 The diagram shows a schematic of a semiconductor process apparatus according to the present invention. The schematic of the semiconductor process apparatus includes: a process chamber as described above, a matching unit 10 connected to the process chamber, and an RF power supply 11 connected to the matching unit 10.

[0082] The radio frequency power supply 11 is used to emit radio frequency power, which is then delivered to the plasma device via the matching unit 10 to generate plasma.

[0083] Matching unit 10 automatically performs impedance matching adjustment to ensure that as much power as possible from RF power supply 11 is transmitted into the process chamber to further excite and generate plasma. RF power supply 11 outputs RF power.

[0084] Specifically, the auxiliary ignition device includes:

[0085] An electron beam generating device 16 penetrates the outer wall 7 of the chamber and is connected to the air intake assembly structure 4. It is used to generate an electron beam when energized, and the electron beam enters the plasma chamber of the plasma device through the air intake assembly structure 4.

[0086] A vacuum chamber 12 surrounds the electron beam generating device 16 and is fixed between the outer wall 7 of the chamber and the air intake assembly structure 4, for sealing the electron beam generating device 16 in the plasma chamber.

[0087] Optionally, it also includes:

[0088] Accelerating electrode 14 is disposed on the side of the electron beam generating device 16 near the air intake assembly structure 4, and is used to accelerate the electron beam into the plasma chamber.

[0089] Optionally, it also includes:

[0090] The focusing electrode 13 is disposed outside the output end of the electron beam generating device 16 and is used to focus the electron beam.

[0091] Optionally, it also includes:

[0092] The conductive sheet 15 is located between the output end of the electron beam generating device 16 and the focusing electrode 13, and is used to provide a channel for the electron beam to enter the plasma chamber.

[0093] Optionally, it also includes:

[0094] The fastener 22 has one end connected to the vacuum chamber 12 and the other end connected to the outer wall 7 of the chamber for fixing the vacuum chamber 12.

[0095] Optionally, it also includes:

[0096] The sealing ring 23 is partially embedded in the vacuum chamber 12 and is located on the side of the fixing member 22 near the center of the vacuum chamber 12.

[0097] Optionally, it also includes:

[0098] The emitter power supply 17 is connected to the emitter of the electron beam generating device 16 and is used to drive the electron beam generating device 16.

[0099] Optionally, it also includes:

[0100] A high-voltage power supply 18 is connected to the emitter of the electron beam generating device 16 to accelerate the flow of the electron beam.

[0101] It should be noted that, for the sake of simplicity, the embodiments of the present invention are described as a series of actions. However, those skilled in the art should understand that the embodiments of the present invention are not limited to the described order of actions, because according to the embodiments of the present invention, some steps can be performed in other orders or simultaneously. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions involved are not necessarily essential to the embodiments of the present invention.

[0102] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0103] Those skilled in the art will understand that embodiments of the present invention can be provided as methods, apparatus, or computer program products. Therefore, embodiments of the present invention can take the form of entirely hardware embodiments, entirely software embodiments, or embodiments combining software and hardware aspects. Furthermore, embodiments of the present invention can take the form of computer program products implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0104] This invention is described with reference to flowchart illustrations and / or block diagrams of methods, terminal devices (systems), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing terminal device to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal device, generate instructions for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0105] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing terminal device to operate in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0106] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal equipment, causing a series of operational steps to be performed on the computer or other programmable terminal equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable terminal equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0107] Although preferred embodiments of the present invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of the embodiments of the present invention.

[0108] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or terminal device that includes said element.

[0109] The above provides a detailed description of an auxiliary ignition device for plasma equipment, a process chamber, and a semiconductor process apparatus provided by the present invention. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. An auxiliary ignition device for a plasma device, characterized in that, include: An electron beam generating device, connected to the air intake assembly structure, is used to generate an electron beam when energized, and the electron beam enters the plasma chamber of the plasma device through the air intake assembly structure; A vacuum chamber, surrounding the electron beam generating device, is fixed between the outer wall of the chamber and the air intake assembly structure, and is used to seal the electron beam generating device in the plasma chamber.

2. The auxiliary ignition device for plasma equipment according to claim 1, characterized in that, Also includes: An accelerating electrode is disposed on the side of the electron beam generating device near the air intake assembly structure, and is used to accelerate the electron beam into the plasma chamber.

3. The auxiliary ignition device for plasma equipment according to claim 1 or 2, characterized in that, Also includes: A focusing electrode is disposed outside the output end of the electron beam generating device and is used to focus the electron beam.

4. The auxiliary ignition device for plasma equipment according to claim 3, characterized in that, Also includes: A conductive sheet, located between the output end of the electron beam generating device and the focusing electrode, is used to provide a channel for the electron beam to enter the plasma chamber.

5. The auxiliary ignition device for plasma equipment according to claim 1 or 2, characterized in that, Also includes: The fastener has one end connected to the vacuum chamber and the other end connected to the outer wall of the chamber to fix the vacuum chamber.

6. The auxiliary ignition device for plasma equipment according to claim 5, characterized in that, Also includes: The sealing ring is partially embedded in the vacuum chamber and is located on the side of the fixing member near the center of the vacuum chamber.

7. The auxiliary ignition device for plasma equipment according to claim 1 or 2, characterized in that, Also includes: An emitter power supply is connected to the emitter of the electron beam generating device and is used to drive the electron beam generating device.

8. The auxiliary ignition device for plasma equipment according to claim 1 or 2, characterized in that, Also includes: A high-voltage power supply is connected to the emitter of the electron beam generating device to accelerate the electron beam flow.

9. A process chamber, characterized in that, include: The auxiliary ignition device, air intake assembly structure, Faraday shield, spiral coil, and outer wall of the cavity for a plasma device as described in any one of claims 1-8 The auxiliary ignition device is located between the outer wall of the chamber and the air intake assembly structure; the Faraday shield is connected to the air intake assembly structure, and the spiral coil is located between the Faraday shield and the outer wall of the chamber.

10. The process chamber according to claim 9, characterized in that, Also includes: A plasma detection device is connected to the outer wall of the chamber and is used to detect the plasma state inside the chamber and generate a detection signal. A processor, connected to the plasma detection device, is used to receive the detection signal and determine the plasma state within the chamber; And based on the plasma state within the chamber, a control signal is generated; A controller, connected to the processor, is used to control the electron beam generating device according to the control signal.

11. A semiconductor process apparatus, characterized in that, include: The process chamber as described in claim 9, a matching unit connected to the process chamber, and an RF power supply connected to the matching unit; The radio frequency power supply is used to emit radio frequency power, which is then delivered to the process chamber via the matching unit to generate plasma.

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