Detector and detector manufacturing method

Abstract

The invention relates to a detector and a detector manufacturing method. The detector comprises an insulating substrate, a photoelectric conversion layer and an electrode group. Wherein the insulating substrate is provided with a plurality of through holes, the plurality of through holes are arranged at intervals in an insulating manner, and the through holes are communicated with a first surface and a second surface, which are oppositely arranged along the thickness direction, of the insulating substrate. The photoelectric conversion layer is disposed in the plurality of through holes. The electrode assembly comprises a plurality of top electrode units and a plurality of bottom electrode units, the top electrode units are arranged on the first face, the bottom electrode units are arranged on the second face, one top electrode unit and one bottom electrode unit are correspondingly arranged on the two sides of each through hole, and the top electrode units and the bottom electrode units are communicated through photoelectric conversion layers located in the through holes. X-ray detection is directly carried out through the photoelectric conversion layers in the through holes at the same time, so that the problems of low imaging speed, long consumed time, low precision and the like existing in single-pixel imaging are solved.

Description

Technical Field

[0001] This application relates to the field of detectors, and more particularly to a detector and a method for manufacturing the detector. Background Technology

[0002] X-ray detectors have wide applications in medical imaging, security inspection, and non-destructive testing. Compared to indirect detectors that use scintillators to convert X-rays into visible light, direct X-ray detectors have high sensitivity and low detection limits.

[0003] However, existing X-ray detectors are all based on single-pixel imaging. All light signals are collected one by one through the displacement of a single detector, which has problems such as slow imaging speed, long time consumption, and low accuracy, and cannot meet the needs of practical applications. Summary of the Invention

[0004] The purpose of this application is to provide a detector and a method for manufacturing the detector.

[0005] According to a first aspect of the embodiments of this application, a detector is provided, the detector comprising:

[0006] An insulating substrate having a plurality of through holes spaced apart and insulated from each other, the through holes connecting a first surface and a second surface of the insulating substrate that are disposed opposite to each other along the thickness direction;

[0007] A photoelectric conversion layer is disposed in a plurality of the through holes;

[0008] The electrode assembly includes multiple top electrode units and multiple bottom electrode units. The top electrode units are disposed on the first surface, and the bottom electrode units are disposed on the second surface. Furthermore, each of the through holes has one top electrode unit and one bottom electrode unit disposed on both sides. The top electrode units and the bottom electrode units are connected through a photoelectric conversion layer located in the through hole.

[0009] It should be noted that the aforementioned insulating substrate can be made of polyimide or other materials with excellent insulating properties, used to isolate the photoelectric conversion layer located in the through-hole, preventing it from generating charge crosstalk. Furthermore, polyimide is flexible and can be used in curved surface detection imaging. The photoelectric conversion layer is made of perovskite material, specifically a hybrid perovskite material with an ABX3 chemical composition. Here, A includes one or more monovalent cations such as methylamine, formamidinium, cesium, and rubidium; B includes one or more divalent cations such as lead, tin, and germanium; and X includes one or more monovalent halogen anions such as iodine, bromine, or chlorine. The perovskite thick film can be a single crystal or polycrystalline perovskite, and thick film deposition can be achieved through processes such as in-situ growth, blade coating, spray coating, spin coating, and thermal evaporation. Perovskite materials have advantages such as high X-ray absorption capacity, long carrier diffusion length, and low-cost fabrication technology. In addition, the top electrode unit and the bottom electrode unit are connected to the processor, which can receive and process the electrical signals from the top electrode unit and the bottom electrode unit.

[0010] This application provides multiple vias in an insulating substrate and disposes a photoelectric conversion layer within these vias. Furthermore, the photoelectric conversion layer is connected to a top electrode unit and a bottom electrode unit. Based on this configuration, when X-rays are emitted towards the detector, the photoelectric conversion layer within the multiple vias generates an electric charge, which is then transferred to the processor via the top and bottom electrode units. After processing by the processor, the area irradiated by the X-rays can be obtained and its pattern can be displayed. In summary, this application directly performs X-ray detection simultaneously through the photoelectric conversion layer within multiple vias, thus solving the problems of slow imaging speed, long processing time, and low accuracy inherent in single-pixel imaging.

[0011] In some embodiments, the electrode group further includes a connection unit, wherein a plurality of top electrode units located on the first surface and arranged along the first direction are connected by the connection unit, and a plurality of bottom electrode units located on the second surface and arranged along the second direction are connected by the connection unit.

[0012] The first direction and the second direction are set at an angle.

[0013] The top electrode unit 310 and the bottom electrode unit 320 are arranged at an angle here to facilitate positioning based on the signals transmitted by the top electrode unit 310 and the bottom electrode unit 320.

[0014] It should be noted that the angle range of the first direction X and the second direction Y here can be greater than or equal to 0° and less than or equal to 360°. For example, the angle range of the first direction X and the second direction Y can be 0°, 30°, 60°, 90°, 120°, 150°, 180°, 210°, 240°, 270°, 300°, 330°, and 360°.

[0015] In some embodiments, the minimum distance between two adjacent top electrode units arranged along the second direction is greater than or equal to 10 μm; and / or, the minimum distance between two adjacent bottom electrode units arranged along the first direction is greater than or equal to 10 μm.

[0016] Within this range, two adjacent top electrode units arranged along the second direction Y will not experience charge crosstalk, thereby reducing display noise. For example, the minimum distance between two adjacent top electrode units arranged along the second direction Y can be 10μm, 11μm, 12μm, 13μm, 14μm, 15μm, 16μm, 17μm, 18μm, 19μm, or 20μm.

[0017] When X-rays are directed at the detector, the photoelectric conversion layer within the multiple vias generates charges and transmits them to the top electrode unit and the bottom electrode unit. The processor can determine the position of the photoelectric conversion layer 200 based on the signals from the top electrode unit and the bottom electrode unit.

[0018] In some embodiments, the width of the connection unit is less than or equal to the width of the electrode unit. When the width of the connection unit is greater than that of the top electrode unit, it receives enough X-rays, which may cause crosstalk between two adjacent photoelectric conversion layers. Therefore, setting the width of the connection unit to be less than or equal to the width of the top electrode unit and / or the bottom electrode unit prevents the connection unit from receiving enough X-rays, thereby preventing crosstalk between two adjacent photoelectric conversion layers.

[0019] In some embodiments, the width of the connection unit is greater than or equal to 2 μm and less than or equal to 100 μm. For example, the width of the connection unit can be 2 μm, 5 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, or 100 μm. Within this range, on the one hand, the photoelectric conversion layer can transmit signals normally, and on the other hand, crosstalk between two adjacent photoelectric conversion layers can be prevented. This avoids the connection unit from receiving too much X-rays and incorrectly sending signals to the processor, thus affecting the final pattern display.

[0020] In some embodiments, at least one of the top electrode units and / or the bottom electrode units are provided with a through hole, the orthographic projection of the through hole is at least partially located within the through hole, and at least a portion of the photoelectric conversion layer is located within the through hole and is disposed in contact with the inner wall of the through hole.

[0021] It should be noted that the perforation can be circular, square or any shape, as long as the orthographic projection of the through hole is at least partially located inside the perforation, it is within the protection scope of this application.

[0022] A perforation is provided in the top electrode unit here, which allows the photoelectric conversion layer located in the through hole to come into direct contact with X-rays, thereby improving the recognition accuracy of the detector in this application.

[0023] In some embodiments, the top electrode unit is provided with the through hole, and the orthographic projection of the through hole is all located on the bottom electrode unit.

[0024] With this configuration, the bottom electrode unit on the second surface directly blocks the through hole, thereby reducing the drilling process of the bottom electrode unit during manufacturing. Furthermore, the photoelectric conversion layer located inside the through hole will not contact the support plate located below the bottom electrode unit, thus preventing the photoelectric conversion layer from sticking to the support plate.

[0025] According to a second aspect of the embodiments of this application, a method for manufacturing a detector is provided, the method comprising:

[0026] Provide insulating substrate;

[0027] Multiple through holes are formed on the insulating substrate;

[0028] A photoelectric conversion layer is formed in the through-hole.

[0029] Users can create the detector by following the steps described above. The process is simple and convenient, and it can be used on a large scale.

[0030] In some embodiments, before the photoelectric conversion layer is formed in the through-hole, a plurality of through-holes are formed on the insulating substrate, and the through-holes connect the first and second surfaces of the insulating substrate that are disposed opposite to each other along the thickness direction.

[0031] A top electrode unit and a bottom electrode unit corresponding to the through hole are deposited on the first surface and the second surface, respectively. The top electrode unit and / or the bottom electrode unit are provided with a perforation, and the orthogonal projection of the through hole is at least partially located within the perforation.

[0032] Wherein, after the photoelectric conversion layer is formed in the through hole, the photoelectric conversion layer is partially located inside the perforation and connected to the inner wall of the perforation.

[0033] A top electrode unit and a bottom electrode unit are provided here, and the processor can determine the position of the photoelectric conversion layer based on the signals from the top electrode unit and the bottom electrode unit. In addition, this embodiment also provides a through hole, and the orthographic projection of the through hole is at least partially located within the through hole. The presence of a through hole in the top electrode unit allows the photoelectric conversion layer located within the through hole to directly contact X-rays, thereby improving the recognition accuracy of the detector in this application.

[0034] In some embodiments, before forming the photoelectric conversion layer on the via, top electrode units and bottom electrode units corresponding to the via are deposited on the first surface and the second surface, respectively.

[0035] A mask is disposed on the electrode with the perforation. The mask includes a membrane aperture, which is disposed corresponding to the perforation, and the orthogonal projection of the perforation is located within the membrane aperture.

[0036] Based on the above configuration, a mask is placed on the electrode with perforations and a membrane hole is left. The membrane hole is set in a manner corresponding to the perforations, that is, only the perforated part is exposed to the outside, so that the photoelectric conversion layer will not stick to the insulating substrate or other components when the photoelectric conversion layer is formed.

[0037] In some embodiments, a photoelectric conversion layer is formed in the via, including:

[0038] The photoelectric conversion layer is formed by spraying or thermal evaporation; or...

[0039] The photoelectric conversion layer is formed by in-situ growth, and a hot-pressing process is performed during the growth of the photoelectric conversion layer; or,

[0040] The photoelectric conversion layer is formed by spin coating and / or blade coating, and a hot pressing process is performed during the formation process.

[0041] Hot pressing can help form a photoelectric conversion layer in situ, and prevent bubbles from forming during spin coating and / or blade coating processes, thus obtaining a purer photoelectric conversion layer.

[0042] In some embodiments, after the photoelectric conversion layer is formed in the through hole, the through hole connects the first and second surfaces of the insulating substrate that are disposed opposite to each other along the thickness direction;

[0043] Top electrode units and bottom electrode units corresponding to the vias are deposited on the first and second surfaces, respectively, and the photoelectric conversion layer is connected to the top electrode units and bottom electrode units, respectively.

[0044] In this embodiment, the top electrode unit and the bottom electrode unit are formed after the photoelectric conversion layer is formed. This allows for more precise positioning of the connection position between the top electrode unit and the bottom electrode unit, and avoids the drilling process in the top electrode unit and the bottom electrode unit.

[0045] In some embodiments, after the photoelectric conversion layer is formed in the via, and before the top electrode unit and bottom electrode unit corresponding to the via are deposited on the first surface and the second surface respectively, the photoelectric conversion layer is formed with a first conversion unit located in the via and a second conversion unit located on the first surface and the second surface.

[0046] Remove the second conversion unit.

[0047] This step makes the second surface flatter, allowing the top and bottom electrode units to bond more tightly to the insulating substrate, and preventing the photoelectric conversion layer from contacting adjacent top and bottom electrode units, thereby improving the accuracy of the detector.

[0048] The beneficial technical effects of the technical solutions provided in this application are:

[0049] This application provides multiple vias in an insulating substrate and disposes a photoelectric conversion layer within these vias. Furthermore, the photoelectric conversion layer is connected to a top electrode unit and a bottom electrode unit. Based on this configuration, when X-rays are emitted towards the detector, the photoelectric conversion layer within the multiple vias generates an electric charge, which is then transferred to the processor via the top and bottom electrode units. After processing by the processor, the area irradiated by the X-rays can be obtained and its pattern can be displayed. In summary, this application directly performs X-ray detection simultaneously through the photoelectric conversion layer within multiple vias, thus solving the problems of slow imaging speed, long processing time, and low accuracy inherent in single-pixel imaging. Attached Figure Description

[0050] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0051] Figure 1 This is a schematic diagram of the structure of the first surface of the detector according to an embodiment of this application.

[0052] Figure 2 This is a schematic diagram of the structure of the second surface of the detector according to an embodiment of this application.

[0053] Figure 3 for Figure 1 A cross-sectional view at point A-A'.

[0054] Figure 4 This is a schematic diagram of a detector receiving X-rays.

[0055] Figure 5 for Figure 4 A display image showing the X-rays received by the detector.

[0056] Figure 6 This is a schematic diagram of the structure of the second surface of another detector according to an embodiment of this application.

[0057] Figure 7 This is a schematic diagram of the structure of the first surface of another detector according to an embodiment of this application.

[0058] Figure 8 for Figure 1 Another cross-sectional view at point A-A'.

[0059] Figure 9 for Figure 1 Another sectional view at point A-A'.

[0060] Figure 10 for Figure 1 Another sectional view at point A-A'.

[0061] Figure 11 This is a schematic diagram illustrating the fabrication process of a detector according to an embodiment of this application.

[0062] Figure 12 This is a schematic diagram illustrating the fabrication process of a detector according to an embodiment of this application.

[0063] Figure 13 This is a schematic diagram illustrating the fabrication process of another detector according to an embodiment of this application.

[0064] Figure 14 This is a schematic diagram illustrating the fabrication process of another detector according to an embodiment of this application.

[0065] Figure 15 This is a schematic diagram illustrating the fabrication process of another detector according to an embodiment of this application.

[0066] Explanation of reference numerals in the attached figures

[0067] Detector 10

[0068] Insulating substrate 100

[0069] Through hole 110

[0070] First page 120

[0071] Second page 130

[0072] Photoelectric conversion layer 200

[0073] Electrode assembly 300

[0074] Top electrode unit 310

[0075] Bottom electrode unit 320

[0076] 330 piercing

[0077] Connection unit 340

[0078] Top connection terminal 350

[0079] First apical subunit 351

[0080] Bottom connection terminal 360

[0081] First bottom terminal unit 361

[0082] Second bottom terminal unit 362

[0083] First direction X

[0084] Second direction Y Detailed Implementation

[0085] The technical solutions in the embodiments (or "implementations") of this application will be clearly and completely described herein with reference to the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements.

[0086] If the embodiments of this application contain terms relating to directional indications or positional relationships (such as up, down, left, right, front, back, inside, outside, top, bottom, center, vertical, horizontal, longitudinal, transverse, length, width, counterclockwise, clockwise, axial, radial, circumferential, etc.), such terms are only used to explain the relative positional relationships and movements between components in a specific posture (as shown in the attached figures); if the specific posture changes, the directional indications or positional relationships will also change accordingly. Furthermore, the terms "first" and "second" used in the embodiments of this application are only for descriptive convenience and should not be construed as indicating or implying relative importance.

[0087] X-ray detectors have wide applications in medical imaging, security inspection, and non-destructive testing. Compared to indirect detectors that use scintillators to convert X-rays into visible light, direct X-ray detectors offer high sensitivity and low detection limits. However, existing X-ray detectors are based on single-pixel imaging, where all light signals are collected one by one through the displacement of individual detectors. This results in slow imaging speed, long processing time, and low accuracy, failing to meet the needs of practical applications.

[0088] This application proposes a detector 10 (i.e., the X-ray detector mentioned above), referring to... Figure 1 , Figure 2 as well as Figure 3As shown, the detector 10 includes an insulating substrate 100, a photoelectric conversion layer 200, and an electrode assembly 300. The insulating substrate 100 has multiple through-holes 110, which are spaced apart and insulated from each other. The through-holes 110 connect a first surface 120 and a second surface 130 of the insulating substrate 100, which are positioned opposite each other along the thickness direction H. The photoelectric conversion layer 200 is disposed within the multiple through-holes 110. The electrode assembly 300 includes multiple top electrode units 310 and multiple bottom electrode units 320. The top electrode units 310 are disposed on the first surface 120, and the bottom electrode units 320 are disposed on the second surface 130. Each through-hole 110 has one top electrode unit 310 and one bottom electrode unit 320 correspondingly disposed on both sides. The top electrode units 310 and bottom electrode units 320 are connected through the photoelectric conversion layer 200 located within the through-holes 110.

[0089] It should be noted that the aforementioned insulating substrate 100 can be made of polyimide or other materials with excellent insulating properties, used to isolate the photoelectric conversion layer 200 located in the through-hole, preventing it from generating charge crosstalk. Furthermore, polyimide is flexible and can be used in curved surface detection imaging. The photoelectric conversion layer 200 is made of perovskite material, specifically a hybrid perovskite material with an ABX3 chemical composition. Here, A includes one or more monovalent cations such as methylamine, formamidinium, cesium, and rubidium; B includes one or more divalent cations such as lead, tin, and germanium; and X includes one or more monovalent halogen anions such as iodine, bromine, or chlorine. The perovskite thick film can be a single crystal or polycrystalline perovskite, and thick film deposition can be achieved through processes such as in-situ growth, blade coating, spray coating, spin coating, and thermal evaporation. Perovskite materials have advantages such as high X-ray absorption capacity, long carrier diffusion length, and low-cost fabrication technology. In addition, the top electrode unit 310 and the bottom electrode unit 320 are connected to a processor, which can receive and process the electrical signals from the top electrode unit 310 and the bottom electrode unit 320.

[0090] In this embodiment, the specific principle is as follows: when the detector 10 is working, the photoelectric conversion layer 200 absorbs X-rays transmitted through a baffle, converting the X-ray energy into electron-hole pairs. The generated electrons and holes are collected onto the electrodes of the detector 10 by the electron transport layer and hole transport layer disposed on both sides of the perovskite quasi-single crystal thick film, respectively. The processor then collects the charge and generates a current signal. These current signals are amplified and converted into readable X-ray intensity data. By analyzing these signals, the processor can obtain X-ray images or intensity information. (Reference) Figure 4 As shown, a slotted plate is placed on an X-ray flat panel detector. When X-rays irradiate the plate, some of the X-rays pass through the slots and reach the X-ray flat panel detector, allowing the detector to obtain the corresponding pattern (e.g., ...). Figure 5As shown in the figure, the pattern is the same as the pattern of the slot.

[0091] This application provides a plurality of through-holes 110 on an insulating substrate 100, and a photoelectric conversion layer 200 is disposed within the plurality of through-holes 110. Furthermore, the photoelectric conversion layer 200 is connected to a top electrode unit 310 and a bottom electrode unit 320. Based on the above configuration, when X-rays are incident on the detector 10, the photoelectric conversion layer 200 within the plurality of through-holes 110 generates an electric charge and transmits it to the processor via the top electrode unit 310 and the bottom electrode unit 320. After processing by the processor, the area irradiated by X-rays can be obtained and its pattern can be displayed. In summary, this application directly performs X-ray detection simultaneously through the photoelectric conversion layer 200 within the plurality of through-holes 110, obtaining the irradiation range of all X-rays within a given area at once, thereby solving the problems of slow imaging speed, long processing time, and low accuracy inherent in single-pixel imaging.

[0092] In one embodiment, reference Figure 1 and Figure 2 As shown, the electrode assembly 300 also includes a connecting unit 340. Multiple top electrode units 310 located on the first surface 120 and arranged along the first direction X are connected via the connecting unit 340, and multiple bottom electrode units 320 located on the second surface 130 and arranged along the second direction Y are connected via the connecting unit 340. The first direction X and the second direction Y are arranged at an angle. The angled arrangement of the top electrode units 310 and bottom electrode units 320 facilitates positioning based on the signals transmitted by the top electrode units 310 and bottom electrode units 320.

[0093] It should be noted that the angle range of the first direction X and the second direction Y here can be greater than 0° and less than 180°. For example, the angle range of the first direction X and the second direction Y can be 10°, 30°, 60°, 90°, 120°, 150°, 160°, 170°, etc. In this embodiment, 90° is preferably used to achieve a reasonable arrangement of the top electrode unit 310 and the bottom electrode unit 320 in the electrode group 300. In addition, it should be noted that, referring to... Figure 1 As shown, the top electrode unit 310 is connected to the top connection terminal 350 via the connection unit 340, while the bottom electrode unit 320 is connected to the bottom connection terminal 360 via the connection unit 340. The top connection terminal 350 and the bottom connection terminal 360 are used for connection to an external processor. Furthermore, referring to... Figure 1 As shown, both the top connection terminal 350 and the bottom connection terminal 360 are directly disposed on the first surface 120, which facilitates connection with an external processor.

[0094] refer to Figure 1As shown, the minimum distance between two adjacent top electrode units 310 arranged along the second direction Y is greater than or equal to 10 μm. Within this range, the two adjacent top electrode units 310 arranged along the second direction Y will not experience charge crosstalk, thereby reducing display noise. For example, the minimum distance between two adjacent top electrode units 310 arranged along the second direction Y can be 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, 16 μm, 17 μm, 18 μm, 19 μm, or 20 μm. Meanwhile, the minimum distance between two adjacent bottom electrode units 320 arranged along the first direction X is greater than or equal to 10 μm. Within this range, the two adjacent top electrode units 310 arranged along the first direction X will not experience charge crosstalk, thereby reducing display noise. For example, the minimum distance between two adjacent top electrode units 310 arranged along the first direction X can also be 10μm, 11μm, 12μm, 13μm, 14μm, 15μm, 16μm, 17μm, 18μm, 19μm, or 20μm. Of course, in other embodiments, the minimum distance between only two adjacent top electrode units 310 arranged along the second direction Y may satisfy the above range, or the minimum distance between only two adjacent bottom electrode units 320 arranged along the first direction X may satisfy the above range.

[0095] When X-rays strike detector 10, the photoelectric conversion layer 200 within the through-hole 110 of the irradiated portion generates an electric charge and transmits it to the top electrode unit 310 and the bottom electrode unit 320. The processor can determine the position of the photoelectric conversion layer 200 based on the signals from the top electrode unit 310 and the bottom electrode unit 320. (Reference) Figure 1 and Figure 2 As shown, when the photoelectric conversion layer 200 at point B is activated, the top electrode unit 310 in the first column from left to right is activated and sends a first signal to the processor. At the same time, the bottom electrode unit 320 in the first row from bottom to top is activated and sends a second signal to the processor. The processor can determine the position of the activated photoelectric conversion layer 200 based on the first and second signals and then perform display processing.

[0096] refer to Figure 1 and Figure 2 As shown, the through-holes 110 are arranged in a 4×4 array. Each through-hole 110 can be considered a pixel. When some or all of them receive X-ray irradiation, they transmit a signal to the processor. After processing, the processor can form a pattern, thus identifying the corresponding X-ray irradiation range. Of course, the through-holes 110 in this application can not only be arranged in a 4×4 array, but also in 8×8, 64×64, 128×128, etc. (Reference) Figure 4As shown in the figure, an instrument is positioned at the top to irradiate X-rays downwards, a baffle is positioned in the middle, and the detector 10 of this application is positioned at the bottom. The baffle displays an image of the letters THU, meaning the detector 10 can receive the irradiation of the THU letter image. After the photoelectric conversion layer 200 receives the X-ray irradiation, it transmits the signal to the processor for processing, thereby obtaining the image shown below. Figure 5 The pattern shown.

[0097] refer to Figure 7 As shown, when the width of the connection unit 340 is greater than that of the top electrode unit 310, it will receive excessive X-rays, which may lead to crosstalk between two adjacent photoelectric conversion layers 200. Figure 7 In the process, X-rays irradiate regions N1 and M. B1 in region N1 is normally excited, sending a first signal to the first top subunit 351 and a second signal to the first bottom subunit 361. However, because the width of the connecting unit 340 in region M is too large, it receives enough X-rays, resulting in excessively high energy. This causes the charge of B1 in region N1 to transfer to B2 in region N2. At this point, the first top subunit 351 of B2 sends the first signal and the second signal to the second bottom subunit 362. After processing by the processor, B1 and B2 are illuminated. However, B2 is not yet irradiated by X-rays, leading to a display error.

[0098] Therefore, in this embodiment, reference Figure 1 and Figure 2 As shown, the width of the connection unit 340 is set to be less than or equal to the width of the top electrode unit 310 and / or the bottom electrode unit 320. This ensures that the connection unit 340 does not receive enough X-rays, thereby preventing crosstalk between two adjacent photoelectric conversion layers 200.

[0099] In this embodiment, the width of the connection unit 340 can be set to be greater than or equal to 2μm and less than or equal to 100μm. For example, the width of the connection unit 340 can be 2μm, 5μm, 10μm, 20μm, 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm, or 100μm. Within the above range, by limiting the minimum width of the connection unit 340, the problem of breakage due to excessive width is avoided, ensuring that the electrical signal received from the photoelectric conversion layer 200 can be transmitted normally through the motor assembly. By limiting the maximum width of the connection unit 340, excessive X-ray energy is absorbed and transferred to adjacent top electrode units due to excessive width, which would cause the corresponding photoelectric conversion layer to receive crosstalk energy, thereby avoiding signal crosstalk, improving detection accuracy, and ensuring the clarity and accuracy of imaging.

[0100] refer to Figure 1 and Figure 2 As shown, both the top electrode unit 310 and the bottom electrode unit 320 are provided with perforations 330. At least a portion of the orthographic projection of the through-hole 110 lies within the perforation 330, and at least a portion of the photoelectric conversion layer 200 is located within the perforation 330 and is in contact with the inner wall of the perforation 330. In this configuration, by providing a perforation 330 on the top electrode unit 310 and exposing the photoelectric conversion layer 200 through the perforation 330, the photoelectric conversion layer 200 located within the through-hole 110 can directly receive X-ray irradiation, better receiving X-ray energy and thus improving the recognition accuracy of the detector 10 of this application. Simultaneously, at least a portion of the photoelectric conversion layer 200 is in contact with the inner wall of the perforation 330 to facilitate the conduction of the electrical signals generated by the photoelectric conversion layer 200. Furthermore, the presence of perforations 330 on both the top electrode unit 310 and the bottom electrode unit 320 also facilitates the positioning and fabrication of the top electrode unit 310 and the bottom electrode unit 320 with the through-hole 110. Of course, in other embodiments, the perforation 330 may be provided only on a portion of the top electrode unit 310 and / or the bottom electrode unit 320.

[0101] It should be noted that the perforation 330 can be circular, square or any shape, as long as the orthographic projection of the through hole 110 is at least partially located within the perforation 330, it is within the protection scope of this application.

[0102] In one embodiment, reference Figure 1 , Figure 6 as well as Figure 8 As shown, the top electrode unit 310 is provided with a through hole 330, and the bottom electrode unit 320 is not provided with a through hole 330. At this time, the orthographic projection of the through hole 110 is all located on the bottom electrode unit 320.

[0103] With this configuration, the bottom electrode unit 320 located on the second surface 130 directly blocks the through hole 110, thereby eliminating the need for drilling the bottom electrode unit 320 during manufacturing. Furthermore, the photoelectric conversion layer 200 located in the through hole 110 will not contact the support plate located below the bottom electrode unit 320, thus preventing the photoelectric conversion layer 200 from sticking to the support plate.

[0104] Further reference Figure 10 As shown, the area of ​​the perforation 330 is set to be larger than the area of ​​the through hole 110. This setting facilitates positioning when fabricating the top electrode unit 310, and allows the perforation 330 to easily align with the corresponding through hole 110.

[0105] Of course, in other embodiments, such as Figure 9As shown, the top electrode unit 310 may not have a perforation. In this case, X-rays directly irradiate the top electrode unit 310, and their energy is absorbed by the top electrode unit 310. The top electrode unit 310 will then transfer the absorbed energy to the corresponding photoelectric conversion layer 200. After receiving the X-rays, the photoelectric conversion layer 200 generates an electric charge, which in turn sends a signal to the top connection terminal 350 and the bottom connection terminal 360.

[0106] This application also proposes a method for manufacturing a detector 10, which is used to manufacture the detector 10 described in the above embodiments. (Refer to...) Figure 11 As shown, the method for manufacturing the detector 10 includes:

[0107] Step S1: Provide an insulating substrate 100;

[0108] Step S2: A plurality of through holes 110 are formed on the insulating substrate 100;

[0109] Step S3: Form a photoelectric conversion layer 200 in the through hole 110.

[0110] Users can make detector 10 by following the above steps. The process is simple and convenient and can be used on a large scale.

[0111] It should be noted that step S3: the fabrication process of forming the photoelectric conversion layer 200 in the through-hole 110 can be achieved by spraying or thermal evaporation to form the photoelectric conversion layer 200; or by in-situ growth to form the photoelectric conversion layer 200, with a hot-pressing process performed during the growth of the photoelectric conversion layer 200; or by spin coating and / or blade coating to form the photoelectric conversion layer 200, with a hot-pressing process performed during the formation process. The hot-pressing process helps prevent the generation of bubbles in the photoelectric conversion layer 200 during in-situ growth and during spin coating and / or blade coating, thus obtaining a purer photoelectric conversion layer 200.

[0112] In one embodiment, reference Figure 12 As shown, before step S3: the photoelectric conversion layer 200 is formed in the via 110, and after step S2: multiple through-holes 110 are formed on the insulating substrate 100, step E1 is added: top electrode unit 310 and bottom electrode unit 320 corresponding to the via 110 are deposited on the first surface 120 and the second surface 130, respectively. The top electrode unit 310 and / or the bottom electrode unit 320 are provided with through holes 330, and the orthogonal projection of the via 110 is at least partially located within the through hole 330.

[0113] In this process, after the photoelectric conversion layer 200 is formed in the through hole 110, part of the photoelectric conversion layer 200 is located inside the through hole 330 and is connected to the inner wall of the through hole 330.

[0114] A top electrode unit 310 and a bottom electrode unit 320 are provided here. The processor can determine the position of the photoelectric conversion layer 200 based on the signals from the top electrode unit 310 and the bottom electrode unit 320. In addition, this embodiment also provides a perforation 330, and the orthogonal projection of the through hole 110 is at least partially located within the perforation 330. The perforation 330 provided in the top electrode unit 310 allows the photoelectric conversion layer 200 located within the through hole 110 to directly contact X-rays, thereby improving the recognition accuracy of the detector 10 of this application.

[0115] In one embodiment, reference Figure 13 As shown, in step S3: before the photoelectric conversion layer 200 is formed in the through hole 110, after step E1: the top electrode unit 310 and the bottom electrode unit 320 corresponding to the through hole 110 are deposited on the first surface 120 and the second surface 130 respectively, step E2 is added: a mask is set on the electrode with the perforation 330. The mask includes a membrane hole, the membrane hole is set corresponding to the perforation 330, and the orthogonal projection of the perforation 330 is located in the membrane hole.

[0116] Based on the above configuration, a mask is provided on the electrode with the perforation 330 and a membrane hole is provided. The membrane hole is provided in a manner corresponding to the perforation 330, that is, only the perforation 330 is exposed to the outside, so that when the photoelectric conversion layer 200 is formed, the photoelectric conversion layer 200 will not stick to the insulating substrate 100 or other components.

[0117] In one embodiment, reference Figure 14 As shown, after step S3: forming the photoelectric conversion layer 200 in the through hole 110; step W1 is added: depositing the top electrode unit 310 and the bottom electrode unit 320 corresponding to the through hole 110 on the first surface 120 and the second surface 130 respectively, and the photoelectric conversion layer 200 is connected to the top electrode unit 310 and the bottom electrode unit 320 respectively.

[0118] In this embodiment, the top electrode unit 310 and the bottom electrode unit 320 are formed after the photoelectric conversion layer 200 is formed. This allows for more precise positioning of the connection position between the top electrode unit 310 and the bottom electrode unit 320, and avoids the drilling process in the top electrode unit 310 and the bottom electrode unit 320.

[0119] In this embodiment, reference Figure 15 As shown, in step S3: after the photoelectric conversion layer 200 is formed in the through hole 110, the photoelectric conversion layer 200 will have a first conversion unit located in the through hole 110 and a second conversion unit located on the first surface 120 and the second surface 130. Before step W1: before the top electrode unit 310 and the bottom electrode unit 320 corresponding to the through hole 110 are deposited on the first surface 120 and the second surface 130 respectively, step W2: remove the second conversion unit.

[0120] Step W2: Removing the second conversion unit can be done by making the second surface 130 flatter during step W1: depositing the top electrode unit 310 and bottom electrode unit 320 corresponding to the via 110 on the first surface 120 and the second surface 130 respectively. This makes the top electrode unit 310 and bottom electrode unit 320 more tightly bonded to the insulating substrate 100 and prevents the photoelectric conversion layer 200 from contacting the adjacent top electrode unit 310 and bottom electrode unit 320, thereby improving the accuracy of the detector 10.

[0121] It should be noted that the technical solutions or features described in the above embodiments can be combined or supplemented with each other without conflict. The scope of protection of this application is not limited to the precise structures described in the above embodiments and shown in the accompanying drawings; all modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A detector, characterized in that, The detector includes: An insulating substrate having a plurality of through holes spaced apart and insulated from each other, the through holes connecting a first surface and a second surface of the insulating substrate that are disposed opposite to each other along the thickness direction; A photoelectric conversion layer is disposed in a plurality of the through holes; The electrode assembly includes multiple top electrode units and multiple bottom electrode units. The top electrode units are disposed on the first surface, and the bottom electrode units are disposed on the second surface. Furthermore, each of the through holes has one top electrode unit and one bottom electrode unit disposed on both sides. The top electrode units and the bottom electrode units are connected through a photoelectric conversion layer located in the through hole.

2. The detector as described in claim 1, characterized in that, The electrode assembly further includes a connection unit, wherein a plurality of top electrode units located on the first surface and arranged along the first direction are connected by the connection unit, and a plurality of bottom electrode units located on the second surface and arranged along the second direction are connected by the connection unit. The first direction and the second direction are set at an angle.

3. The detector as described in claim 2, characterized in that, The minimum distance between two adjacent top electrode units arranged along the second direction is greater than or equal to 10 μm; and / or, the minimum distance between two adjacent bottom electrode units arranged along the first direction is greater than or equal to 10 μm.

4. The detector as described in claim 2, characterized in that, The width of the connecting unit is less than or equal to the width of the top electrode unit and / or the bottom electrode unit.

5. The detector as described in claim 4, characterized in that, The width of the connecting unit is greater than or equal to 2μm and less than or equal to 100μm.

6. The detector as claimed in claim 1, characterized in that, At least one of the top electrode units and / or the bottom electrode units is provided with a through hole, the orthographic projection of the through hole is at least partially located within the through hole, and at least a portion of the photoelectric conversion layer is located within the through hole and is in contact with the inner wall of the through hole.

7. The detector as claimed in claim 6, characterized in that, The top electrode unit is provided with the through hole, and the orthographic projection of the through hole is located on the bottom electrode unit.

8. A method for manufacturing a detector, characterized in that, The method for manufacturing the detector includes: Provide insulating substrate; Multiple through holes are formed on the insulating substrate; A photoelectric conversion layer is formed in the through-hole.

9. The detector manufacturing method as described in claim 8, characterized in that, Before the photoelectric conversion layer is formed in the through hole, a plurality of through holes are opened on the insulating substrate, and the through holes connect the first and second surfaces of the insulating substrate that are arranged opposite to each other along the thickness direction. A top electrode unit and a bottom electrode unit corresponding to the through hole are deposited on the first surface and the second surface, respectively. The top electrode unit and / or the bottom electrode unit are provided with a perforation, and the orthogonal projection of the through hole is at least partially located within the perforation. Wherein, after the photoelectric conversion layer is formed in the through hole, the photoelectric conversion layer is partially located inside the perforation and connected to the inner wall of the perforation.

10. The detector manufacturing method as described in claim 9, characterized in that, Before forming the photoelectric conversion layer in the via, top electrode units and bottom electrode units corresponding to the vias are deposited on the first surface and the second surface, respectively. A mask is disposed on the electrode with the perforation. The mask includes a membrane aperture, which is disposed corresponding to the perforation, and the orthogonal projection of the perforation is located within the membrane aperture.

11. The detector manufacturing method as described in claim 8, characterized in that, A photoelectric conversion layer is formed in the through-hole, including: The photoelectric conversion layer is formed by spraying or thermal evaporation; or... The photoelectric conversion layer is formed by in-situ growth, and a hot-pressing process is performed during the growth of the photoelectric conversion layer; or, The photoelectric conversion layer is formed by spin coating and / or blade coating, and a hot pressing process is performed during the formation process.

12. The detector manufacturing method as described in claim 8, characterized in that, After the photoelectric conversion layer is formed in the through hole, the through hole connects the first and second surfaces of the insulating substrate that are disposed opposite to each other along the thickness direction; Top electrode units and bottom electrode units corresponding to the vias are deposited on the first and second surfaces, respectively, and the photoelectric conversion layer is connected to the top electrode units and bottom electrode units, respectively.

13. The detector manufacturing method as described in claim 12, characterized in that, After the photoelectric conversion layer is formed in the through hole, before the top electrode unit and bottom electrode unit corresponding to the through hole are deposited on the first surface and the second surface respectively, the photoelectric conversion layer is formed with a first conversion unit located in the through hole and a second conversion unit located on the first surface and the second surface. Remove the second conversion unit.

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