Preparation method of hole transport layer, perovskite solar cell and preparation method of perovskite solar cell
By embedding MoO3 nanoparticles into the CuxO thin film to form a heterojunction structure, the problems of charge transfer and energy level regulation in the hole transport layer in perovskite solar cells were solved, thereby improving the photoelectric conversion efficiency and reducing the cost.
Patent Information
- Application Number
- CN202411131023.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-16
- Publication Date
- 2026-03-03
AI Technical Summary
Existing technologies struggle to improve the photoelectric conversion efficiency of perovskite solar cells through suitable hole transport layers, particularly in terms of charge transfer and energy level regulation.
MoO3 nanoparticles are embedded in CuxO thin films to form heterojunction structures. By adjusting the MoO3 doping ratio, the film energy level can be adjusted to achieve efficient charge transfer and hole transport.
It effectively improves the photoelectric conversion efficiency of perovskite solar cells, reduces costs, and the materials are inexpensive and readily available.
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Figure CN121604708A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of perovskite solar cell fabrication technology, and specifically relates to a method for preparing a hole transport layer and a perovskite solar cell and the same method. Background Technology
[0002] Perovskite solar cells have become a research hotspot in the global solar cell field in recent years due to their significant advantages such as low manufacturing cost and high efficiency. The hole transport layer is a crucial layer in perovskite solar cells, effectively transporting holes and blocking electrons. This prevents unintended convergence and current leakage caused by direct contact between the perovskite light-absorbing layer and the electrodes, thus stabilizing the performance of the perovskite solar cell. Therefore, selecting and improving a suitable hole transport layer can effectively enhance the photoelectric conversion efficiency of perovskite solar cells. Summary of the Invention
[0003] The technical problem to be solved by this invention is to provide a method for preparing a hole transport layer and a perovskite solar cell and the same method thereof, by means of Cu x By embedding MoO3 nanoparticles into the O thin film, efficient charge transfer and hole transport are achieved throughout the layer. Furthermore, the energy level of the film surface can be adjusted according to the proportion of MoO3 nanoparticles. The improved hole transport layer can effectively enhance the photoelectric conversion efficiency of perovskite solar cells.
[0004] This invention is achieved by providing a method for preparing a hole transport layer, comprising the following steps: Step 1: Preparation of MoO3 nanoparticles: 2.5 mmol of molybdenum acetylacetonate was dissolved in 5 mL of 2-methoxyethanol, placed in a microwave reactor, and heated by microwave at a frequency of 2.54 GHz for 60 s to obtain MoO3 nanoparticles.
[0005] Step 2, Cu x Preparation of O precursor solution: 0.5 mmol of copper acetylacetonate was dissolved in 5 mL of ethanol, 30 μL of ethanolamine was added, and the mixture was stirred and heated at 60 °C for 12 h to obtain Cu. x O precursor solution.
[0006] Step 3: Cu doped with MoO3 x Preparation of O heterojunction thin films: 0.1 mol of MoO3 nanoparticles were dissolved in 1 mL of ethanol, and 0.4 mol of H2O2 was added as a stabilizer to prevent nanoparticle aggregation, resulting in a MoO3 mixed solution. The MoO3 mixed solution was then added to Cu at a mass ratio of 20%. x In the O precursor solution, the mixture was stirred for 2 hours to obtain Cu doped with MoO3. xO precursor solution; after filtration through a PVDF filter, the MoO3-doped Cu was spin-coated onto a cleaned transparent conductive substrate. x O precursor liquid was then annealed at 250°C for 30 min to obtain Cu doped with MoO3. x O heterojunction thin film, i.e., the required hole transport layer.
[0007] This invention is implemented as follows, and also provides a perovskite solar cell, including a hole transport layer, which is prepared using the hole transport layer preparation method described above.
[0008] This invention is implemented as follows, and also provides a method for fabricating a perovskite solar cell, comprising the following steps: Step 1: Clean the transparent conductive substrate sequentially with deionized water, isopropanol, and acetone using ultrasonic cleaning, then dry it with nitrogen gas and treat it with UV-Ozone for 10 minutes.
[0009] Step 2: Prepare MoO3-doped Cu on a cleaned transparent conductive substrate. x O-hole transport layer.
[0010] Step 3: Prepare a passivation layer on the hole transport layer.
[0011] Step 4: Sequentially fabricate a perovskite light-absorbing layer, an electron transport layer, and a metal electrode on the passivation layer to obtain a perovskite solar cell.
[0012] Compared with the prior art, the method for preparing the hole transport layer and the perovskite solar cell of the present invention have the following characteristics: This invention forms a heterojunction structure by embedding nanoparticles in a hole transport layer (HTL) film. This heterojunction structure comprises individual MoO3 and Cu particles at the nanoscale. x O construction does not form alloys, solid solutions, or voids; the interface of the two nanomaterials forms nanodomains with different energy structures, inducing charge transfer. The nanomaterials doped in this invention are distributed throughout the hole transport layer (HTL), creating charge transfer interfaces throughout the layer and enabling the tuning of the energy levels of the entire thin film. This invention controls energy level changes by adjusting the MoO3 doping ratio in the precursor solution to change the number of charge transfer interfaces and precisely match the energy level structure of different types of perovskite light-absorbing layers. The MoO3 doped in this invention is a strong p-type dopant with a high work function. Doping it into the HTL layer can effectively improve the high work function and enhance the photoelectric conversion efficiency of perovskite solar cells. The HTL layer of this invention uses Cu as its material. x O, whose raw materials are inexpensive, greatly reduces costs. Attached Figure Description
[0013] Figure 1 This is a schematic diagram of the ionic structure of a conventional cation doping method; Figure 2 This is a schematic diagram of the ionic structure of conventional cation doping and surface charge transfer doping methods; Figure 3 The MoO3 and Cu used in the method for preparing the hole transport layer of this invention x A schematic diagram of the ionic structure of the O heterojunction doping method; Figure 4 This is a schematic diagram of the internal structure of the perovskite solar cell of the present invention; Figure 5 This is a schematic diagram comparing the performance test results of the perovskite solar cells prepared in Example 4 of the present invention with those prepared in the comparative example. Detailed Implementation
[0014] To make the technical problems to be solved, the technical solutions, and the beneficial effects of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention. Example 1
[0015] A preferred embodiment of the method for preparing the hole transport layer of the present invention includes the following steps: Step 1: Preparation of MoO3 nanoparticles: 2.5 mmol of molybdenum acetylacetonate was dissolved in 5 mL of 2-methoxyethanol, placed in a microwave reactor, and heated by microwave at a frequency of 2.54 GHz for 60 s to obtain MoO3 nanoparticles.
[0016] Step 2, Cu x Preparation of O precursor solution: 0.5 mmol of copper acetylacetonate was dissolved in 5 mL of ethanol, 30 μL of ethanolamine was added, and the mixture was stirred and heated at 60 °C for 12 h to obtain Cu. x O precursor solution.
[0017] Step 3: Cu doped with MoO3 x Preparation of O heterojunction thin films: 0.1 mol of MoO3 nanoparticles were dissolved in 1 mL of ethanol, and 0.4 mol of H2O2 was added as a stabilizer to prevent nanoparticle aggregation, resulting in a MoO3 mixed solution. The MoO3 mixed solution was then added to Cu at a mass ratio of 20%. x In the O precursor solution, the mixture was stirred for 2 hours to obtain Cu doped with MoO3. x O precursor solution; after filtration through a PVDF filter, the MoO3-doped Cu was spin-coated onto a cleaned transparent conductive substrate. xO precursor liquid was then annealed at 250°C for 30 min to obtain Cu doped with MoO3. x O heterojunction thin film, i.e., the required hole transport layer.
[0018] Common methods for improving HTL (hole transport layer) layers similar to those in this invention include conventional cation doping and surface charge transfer doping (SCTD). The ionic structure for conventional cation doping can be found in [reference needed]. Figure 1 By incorporating doped cations into the original HTL layer's metal oxide lattice to form holes, the charge transport capability of the entire HTL layer is enhanced. A drawback is that the dopant cannot provide sufficient energy level modulation to regulate charge injection characteristics. The ionic structure obtained using the SCTD method can be found in [reference needed]. Figure 2 This method involves stacking different materials to form a heterostructure. The advantage of this approach is that the two materials have different energy bands, which promotes charge transfer at their interface and alters the energy levels at the interface. However, this phenomenon is limited to the area close to the thin film interface, approximately within a 10nm range; if the thin film is thicker, the phenomenon is less pronounced.
[0019] This invention employs a novel heterojunction doping method; the specific ionic structure can be found in [reference needed]. Figure 3 Unlike common cation doping and surface charge transfer doping, this method uses Cu... x MoO3 nanoparticles are embedded in Cu thin films. This doping method, compared to traditional doping methods, achieves better results in Cu... x The O thin film layer forms nano-regions with different energy levels, inducing Cu x Charge transfer occurs at the O and MoO3 interface, enabling efficient hole transport, which is beneficial for regulating the entire thin film energy level and can also effectively improve the thin film conductivity.
[0020] This invention utilizes Cu x By embedding MoO3 nanoparticles into the O thin film, efficient charge transfer and hole transport are achieved throughout the layer. Furthermore, the energy level of the film surface can be adjusted according to the proportion of MoO3 nanoparticles. The improved hole transport layer can effectively enhance the photoelectric conversion efficiency of perovskite solar cells. Example 2
[0021] Please refer to Figure 4 As shown, this invention also discloses an embodiment of a perovskite solar cell. The internal structure of the perovskite solar cell, from top to bottom, includes a transparent conductive substrate 1, a hole transport layer 2, a passivation layer 3, a perovskite light-absorbing layer 4, an electron transport layer 5, and a metal electrode 6. The hole transport layer 2 is prepared using the hole transport layer preparation method described above, and the hole transport layer 2 is Cu doped with MoO3. x O-hole transport layer. Example 3
[0022] This invention also discloses a first embodiment of a method for fabricating a perovskite solar cell, comprising the following steps: Step 1: Clean the transparent conductive substrate 1 sequentially with deionized water, isopropanol, and acetone using ultrasonic cleaning, then dry it with nitrogen gas, and treat it with UV-Ozone for 10 minutes.
[0023] Step 2: Prepare MoO3-doped Cu on the cleaned transparent conductive substrate 1. x Hole transport layer 2.
[0024] Step 3: Prepare a passivation layer 3 on the hole transport layer 2.
[0025] Step 4: Sequentially prepare the perovskite light-absorbing layer 4, the electron transport layer 5, and the metal electrode 6 on the passivation layer 3 to obtain the perovskite solar cell.
[0026] The transparent conductive substrate 1 includes a conductive film, and the material used to prepare the conductive film is any one of ITO (indium tin oxide), FTO (fluorine-doped tin oxide), and AZO (aluminum-doped zinc oxide).
[0027] The electron transport layer 5 is prepared from any one of SnO, ZnO, TiO2, ZnS, CdS, In2S3, MoS2, SnS2, PDI, NDI, PDIN, and PDINO.
[0028] The preparation method of the perovskite solar cell of the present invention is further illustrated below through specific embodiments. Example 4
[0029] A second embodiment of the method for preparing perovskite solar cells of the present invention includes the following steps: Step 11: Clean the 2.5cm*2.5cm ITO substrate sequentially with deionized water, isopropanol, and acetone using ultrasonic cleaning for 15 minutes each, then dry it with nitrogen and UV treatment for 30 minutes.
[0030] Step 12: Preparation of MoO3 nanoparticles: 2.5 mmol of molybdenum acetylacetonate was dissolved in 5 mL of 2-methoxyethanol, placed in a microwave reactor, and heated by microwave at a frequency of 2.54 GHz for 60 s to obtain MoO3 nanoparticles.
[0031] Step 13, Cu x Preparation of O precursor solution: 0.5 mmol of copper acetylacetonate was dissolved in 5 mL of ethanol, 30 μL of ethanolamine was added, and the mixture was stirred and heated at 60 °C for 12 h to obtain Cu. x O precursor solution.
[0032] Step 14, Hole Transport Layer (HTL) Preparation: Dissolve 0.1 mol of the MoO3 nanoparticles prepared in Step 12 in 1 mL of ethanol, and add 0.4 mol of H2O2 as a stabilizer to prevent nanoparticle aggregation, obtaining a MoO3 mixed solution. Add the MoO3 mixed solution to the Cu prepared in Step 13 at a mass ratio of 20%. x In the O precursor solution, the mixture was stirred for 2 hours to obtain Cu doped with MoO3. x O precursor liquid; after filtration through a PVDF filter, the MoO3-doped Cu is coated onto the transparent conductive substrate prepared in step 11 using a spin-coating method. x O precursor liquid was then annealed at 250°C for 30 min to obtain Cu doped with MoO3. x O heterojunction thin film, namely hole transport layer 2.
[0033] Step 15, preparation of passivation layer 3: Dissolve TPA-BA in 5 mL of a mixed solvent of DMF:DMSO=4:1, then spin-coat the TPA-BA solution onto the surface of the hole transport layer, and anneal at 100°C for 10 min under a nitrogen atmosphere to obtain passivation layer 3.
[0034] Step 16, Preparation of perovskite light-absorbing layer 4: Dissolve 18 mg of CsI, 26.7 mg of MABr, 199.8 mg of FAI, 580.9 mg of PbI2, and 87.4 mg of PbBr2 in 1 mL of a mixed solvent of DMF:DMSO = 4:1 to obtain a perovskite precursor solution. Then spin-coat the perovskite precursor solution onto the surface of the passivation layer. During the spin-coating process, add the anti-solvent CB dropwise. Anneal at 120 °C for 30 min to obtain perovskite light-absorbing layer 4.
[0035] Step 17, Electron Transport Layer (ETL) Preparation: Add 30 μL of PC at a concentration of 20 mg / mL. 61 BM's CB solution was dropped onto the perovskite light-absorbing layer and spin-coated at 2000 RPM for 30 s. Then, 70 μL of a 0.5 mg / mL BCP IPA solution was dropped onto the PC. 61 On the BM layer, spin coating is performed at a speed of 5000 RPM for 30 seconds to obtain the electron transport layer (ETL).
[0036] Step 18: Deposit an electrode Au with a thickness of 60 nm on the electron transport layer 5 to obtain the metal electrode 6, thus completing the fabrication of the perovskite solar cell. Example 5
[0037] A third embodiment of the method for fabricating perovskite solar cells of the present invention includes the following steps: Step 21: Clean the 2.5cm*2.5cm ITO substrate sequentially with deionized water, isopropanol, and acetone using ultrasonic cleaning for 15 minutes each, then dry it with nitrogen and treat it with UV for 30 minutes.
[0038] Step 22: Preparation of MoO3 nanoparticles: 2.5 mmol of molybdenum acetylacetonate was dissolved in 5 mL of 2-methoxyethanol, placed in a microwave reactor, and heated by microwave at a frequency of 2.54 GHz for 60 s to obtain MoO3 nanoparticles.
[0039] Step 23, Cu x Preparation of O precursor solution: 0.5 mmol of copper acetylacetonate was dissolved in 5 mL of ethanol, 30 μL of ethanolamine was added, and the mixture was stirred and heated at 60 °C for 12 h to obtain Cu. x O precursor solution.
[0040] Step 24, Hole Transport Layer (HTL) Preparation: Dissolve 0.1 mol of the MoO3 nanoparticles prepared in Step 22 in 1 mL of ethanol, and add 0.4 mol of H2O2 as a stabilizer to prevent nanoparticle aggregation, obtaining a MoO3 mixed solution. Add the MoO3 mixed solution to the Cu prepared in Step 23 at a mass ratio of 10%~30%. x In the O precursor solution, the mixture was stirred for 2 hours to obtain Cu doped with MoO3. x O precursor liquid; after filtration through a PVDF filter, the MoO3-doped Cu is coated onto the transparent conductive substrate prepared in step 21 using a spin-coating method. x O precursor liquid was then annealed at 250°C for 30 min to obtain Cu doped with MoO3. x O heterojunction thin film, namely hole transport layer 2.
[0041] Step 25, preparation of passivation layer 3: Dissolve TPA-BA in 5 mL of a mixed solvent of DMF:DMSO = 4:1, then spin-coat the TPA-BA solution onto the surface of the hole transport layer, and anneal at 100°C for 10 min under a nitrogen atmosphere to obtain passivation layer 3.
[0042] Step 26: Preparation of perovskite light-absorbing layer 4: Dissolve 599 mg of PbI2, 172 mg of MAI, 39 mg of PbCl2 and 46.4 mg of FAI in a mixed solution of 300 μL of DMSO and 700 μL of GBL, and stir at 53 °C for 12 h; add 50 μL of perovskite precursor solution to the passivation layer, spin coat at 1500 rpm for 20 s, then spin coat at 3500 rpm for 40 s, and in the last 15 seconds of spin coating, rapidly drop 900 μL of toluene into the film, and finally anneal at 100 °C for 6 minutes to obtain perovskite light-absorbing layer 4.
[0043] Step 27: Preparation of electron transport layer (ETL): Dissolve 23 mg of PCBM in 1 mL of chlorobenzene and stir at room temperature for 2 h. Take 50 μL of the solution and drop it onto the perovskite light-absorbing layer. Spin coat at 2500 rpm for 40 s and anneal at 100°C for 10 min to obtain the electron transport layer (ETL).
[0044] Step 28: Deposit an electrode Ag with a thickness of 60 nm on the electron transport layer 5 to obtain the metal electrode 6, thus completing the fabrication of the perovskite solar cell.
[0045] Comparative Example The fabrication method of this comparative perovskite solar cell is similar to that of Example 4, except that MoO3 nanoparticles are not used in the hole transport layer; only Cu is used. x The O precursor solution is not required in step 12, nor is the preparation of the MoO3 mixed solution necessary in step 14. Only Cu is coated onto the cleaned transparent conductive substrate. x O precursor solution, Cu without MoO3 doping x O precursor fluid. Other steps are the same as in Example 4.
[0046] The performance of the perovskite solar cells prepared in Example 4 and the comparative example was tested, and the results were as follows: Figure 5 The performance comparison diagram shown is illustrated below. Figure 5 It can be seen that Example 4 contains Cu doped with MoO3. x The perovskite solar cell with an O hole transport layer achieved a photoelectric conversion efficiency of 16.87%, while the comparative example containing Cu... x The photoelectric conversion efficiency of perovskite solar cells with a hole transport layer of O is only 14.95%. The hole transport layer prepared by the method of the present invention can effectively improve the photoelectric conversion efficiency of perovskite solar cells and achieve the expected results.
[0047] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.
Claims
1. A method for preparing a hole transport layer, characterized in that, Includes the following steps: Step 1: Preparation of MoO3 nanoparticles: 2.5 mmol of molybdenum acetylacetonate was dissolved in 5 mL of 2-methoxyethanol, placed in a microwave reactor, and heated by microwave at a frequency of 2.54 GHz for 60 s to obtain MoO3 nanoparticles. Step 2, Cu x Preparation of O precursor solution: 0.5 mmol of copper acetylacetonate was dissolved in 5 mL of ethanol, 30 μL of ethanolamine was added, and the mixture was stirred and heated at 60 °C for 12 h to obtain Cu. x O precursor solution; Step 3: Cu doped with MoO3 x Preparation of O heterojunction thin films: 0.1 mol of MoO3 nanoparticles were dissolved in 1 mL of ethanol, and 0.4 mol of H2O2 was added as a stabilizer to prevent nanoparticle aggregation, resulting in a MoO3 mixed solution. The MoO3 mixed solution was then added to Cu at a mass ratio of 20%. x In the O precursor solution, the mixture was stirred for 2 hours to obtain Cu doped with MoO3. x O precursor solution; after filtration through a PVDF filter, the MoO3-doped Cu was spin-coated onto a cleaned transparent conductive substrate. x O precursor liquid was then annealed at 250°C for 30 min to obtain Cu doped with MoO3. x O heterojunction thin film, i.e., the required hole transport layer.
2. A perovskite solar cell, comprising a hole transport layer, characterized in that, The hole transport layer is prepared using the method described in claim 1.
3. A method for fabricating a perovskite solar cell, characterized in that, Includes the following steps: Step 1: Clean the transparent conductive substrate sequentially with deionized water, isopropanol, and acetone using ultrasonic cleaning, then dry it with nitrogen gas, and treat it with UV-Ozone for 10 minutes. Step 2: Prepare MoO3-doped Cu on a cleaned transparent conductive substrate. x O-hole transport layer; Step 3: Prepare a passivation layer on the hole transport layer; Step 4: Sequentially fabricate a perovskite light-absorbing layer, an electron transport layer, and a metal electrode on the passivation layer to obtain a perovskite solar cell.
4. The method for preparing a perovskite solar cell as described in claim 3, characterized in that, The transparent conductive substrate includes a conductive thin film, and the conductive thin film is prepared from any one of ITO, FTO, and AZO.
5. The method for preparing a perovskite solar cell as described in claim 3, characterized in that, The electron transport layer is prepared from any one of SnO, ZnO, TiO2, ZnS, CdS, In2S3, MoS2, SnS2, PDI, NDI, PDIN, and PDINO.
6. The method for preparing a perovskite solar cell as described in claim 3, characterized in that, The preparation method includes the following steps: Step 11: Clean the 2.5cm*2.5cm ITO substrate sequentially with deionized water, isopropanol, and acetone using ultrasonic cleaning for 15 minutes each, then dry it with nitrogen and UV treatment for 30 minutes. Step 12: Preparation of MoO3 nanoparticles: 2.5 mmol of molybdenum acetylacetonate was dissolved in 5 mL of 2-methoxyethanol, placed in a microwave reactor, and heated by microwave at a frequency of 2.54 GHz for 60 s to obtain MoO3 nanoparticles. Step 13, Cu x Preparation of O precursor solution: 0.5 mmol of copper acetylacetonate was dissolved in 5 mL of ethanol, 30 μL of ethanolamine was added, and the mixture was stirred and heated at 60 °C for 12 h to obtain Cu. x O precursor solution; Step 14, Hole Transport Layer Preparation: Dissolve 0.1 mol of the MoO3 nanoparticles prepared in Step 12 in 1 mL of ethanol, and add 0.4 mol of H2O2 as a stabilizer to prevent nanoparticle aggregation, obtaining a MoO3 mixed solution. Add the MoO3 mixed solution to the Cu prepared in Step 13 at a mass ratio of 20%. x In the O precursor solution, the mixture was stirred for 2 hours to obtain Cu doped with MoO3. x O precursor liquid; after filtration through a PVDF filter, the MoO3-doped Cu is coated onto the transparent conductive substrate prepared in step 11 using a spin-coating method. x O precursor liquid was then annealed at 250°C for 30 min to obtain Cu doped with MoO3. x O heterojunction thin film, i.e. hole transport layer; Step 15, passivation layer preparation: Dissolve TPA-BA in 5 mL of a mixed solvent of DMF:DMSO = 4:1, then spin-coat the TPA-BA solution onto the surface of the hole transport layer, and anneal at 100°C for 10 min under a nitrogen atmosphere to obtain the passivation layer. Step 16, Preparation of perovskite light-absorbing layer: Dissolve 18 mg of CsI, 26.7 mg of MABr, 199.8 mg of FAI, 580.9 mg of PbI2, and 87.4 mg of PbBr2 in 1 mL of a mixed solvent of DMF:DMSO = 4:1 to obtain a perovskite precursor solution. Then spin-coat the perovskite precursor solution onto the surface of the passivation layer. During the spin-coating process, add the anti-solvent CB dropwise. Anneal at 120 °C for 30 min to obtain the perovskite light-absorbing layer. Step 17, Electron transport layer preparation: Add 30 μL of PC with a concentration of 20 mg / mL 61 BM's CB solution was dropped onto the perovskite light-absorbing layer and spin-coated at 2000 RPM for 30 s. Then, 70 μL of a 0.5 mg / mL BCP IPA solution was dropped onto the PC. 61 On the BM layer, spin coating is performed at a speed of 5000 RPM for 30 seconds to obtain the electron transport layer; Step 18: Deposit an electrode Au with a thickness of 60 nm on the electron transport layer to obtain a metal electrode, thus completing the fabrication of the perovskite solar cell.
7. The method for preparing a perovskite solar cell as described in claim 3, characterized in that, The preparation method includes the following steps: Step 21: Clean the 2.5cm*2.5cm ITO substrate sequentially with deionized water, isopropanol, and acetone using ultrasonic cleaning for 15 minutes each, then dry it with nitrogen and UV treatment for 30 minutes. Step 22: Preparation of MoO3 nanoparticles: 2.5 mmol of molybdenum acetylacetonate was dissolved in 5 mL of 2-methoxyethanol, placed in a microwave reactor, and heated by microwave at a frequency of 2.54 GHz for 60 s to obtain MoO3 nanoparticles. Step 23, Cu x Preparation of O precursor solution: 0.5 mmol of copper acetylacetonate was dissolved in 5 mL of ethanol, 30 μL of ethanolamine was added, and the mixture was stirred and heated at 60 °C for 12 h to obtain Cu. x O precursor solution; Step 24, Hole Transport Layer Preparation: Dissolve 0.1 mol of the MoO3 nanoparticles prepared in Step 22 in 1 mL of ethanol, and add 0.4 mol of H2O2 as a stabilizer to prevent nanoparticle aggregation, obtaining a MoO3 mixed solution. Add the MoO3 mixed solution to the Cu prepared in Step 23 at a mass ratio of 10%~30%. x In the O precursor solution, the mixture was stirred for 2 hours to obtain Cu doped with MoO3. x O precursor liquid; after filtration through a PVDF filter, the MoO3-doped Cu is coated onto the transparent conductive substrate prepared in step 21 using a spin-coating method. x O precursor liquid was then annealed at 250°C for 30 min to obtain Cu doped with MoO3. x O heterojunction thin film, i.e. hole transport layer; Step 25, passivation layer preparation: Dissolve TPA-BA in 5 mL of a mixed solvent of DMF:DMSO = 4:1, then spin-coat the TPA-BA solution onto the surface of the hole transport layer, and anneal at 100°C for 10 min under a nitrogen atmosphere to obtain the passivation layer. Step 26: Preparation of the perovskite light-absorbing layer: Dissolve 599 mg of PbI2, 172 mg of MAI, 39 mg of PbCl2 and 46.4 mg of FAI in a mixed solution of 300 μL of DMSO and 700 μL of GBL, and stir at 53 °C for 12 h; Add 50 μL of perovskite precursor solution to the passivation layer, spin coat at 1500 rpm for 20 s, then spin coat at 3500 rpm for 40 s, and in the last 15 seconds of spin coating, rapidly drop 900 μL of toluene into the film, and finally anneal at 100 °C for 6 minutes to obtain the perovskite light-absorbing layer; Step 27: Preparation of electron transport layer: Dissolve 23 mg of PCBM in 1 mL of chlorobenzene, stir at room temperature for 2 h, take 50 μL of the solution and drop it onto the perovskite light-absorbing layer, spin coat at 2500 rpm for 40 s, and anneal at 100°C for 10 min to obtain the electron transport layer ETL. Step 28: Deposit an Ag electrode with a thickness of 60 nm on the electron transport layer to obtain a metal electrode, thus completing the fabrication of the perovskite solar cell.