Manufacturing method of arc-shaped semiconductor substrate

Abstract

The invention discloses a method for manufacturing an arc-shaped semiconductor substrate. The method comprises the following steps of: depositing a hemispherical silicon layer on an original semiconductor substrate; carrying out oxidation treatment on the hemispherical silicon layer so as to form a silicon oxide layer on the surface of the hemispherical silicon layer; and forming a doped-rich silicon layer on the surface of the silicon oxide layer to obtain the arc-shaped semiconductor substrate. According to the technical scheme, the semispherical silicon film is grown on the semiconductor substrate, so that the arc-shaped semiconductor substrate with relatively good performance can be formed, and the problem that the radian of an arc is unstable or not high in the prior art is solved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a method for manufacturing an arc-shaped semiconductor substrate. Background Technology

[0002] Existing technologies for forming arc-shaped structures on semiconductor substrates primarily employ photolithography, where photoresist is coated onto the semiconductor substrate, and a mask is used to transfer the arc-shaped pattern onto the photoresist. Alternatively, chemical etching or dry etching techniques are used, with the photoresist acting as a mask to remove unwanted portions, thus forming the arc-shaped semiconductor substrate structure. However, these methods all suffer from problems such as unstable curvature or insufficient curvature. Summary of the Invention

[0003] The purpose of this invention is to provide a method for manufacturing an arc-shaped semiconductor substrate. By growing a hemispherical silicon thin film on the semiconductor substrate, an arc-shaped semiconductor substrate with better performance can be formed, thereby solving the problems of unstable curvature or insufficient curvature of the arc in the prior art.

[0004] To achieve the above objectives, embodiments of the present invention provide a method for manufacturing an arc-shaped semiconductor substrate, comprising:

[0005] A hemispherical silicon layer is deposited on the original semiconductor substrate;

[0006] The hemispherical silicon layer is oxidized to form a silicon oxide layer on the surface of the hemispherical silicon layer;

[0007] A richly doped silicon layer is formed on the surface of the silicon oxide layer to obtain an arc-shaped semiconductor substrate.

[0008] Furthermore, the deposition of a hemispherical silicon layer on the original semiconductor substrate specifically involves:

[0009] Using hot-wire chemical vapor deposition, silicon is deposited on a raw semiconductor substrate under conditions of 60–100 W power, SiH4 as the reactant gas, and a gas flow rate of 0.1–0.5 sccm, to grow a hemispherical silicon layer.

[0010] Furthermore, the oxidation treatment of the hemispherical silicon layer specifically involves:

[0011] The hemispherical silicon layer is oxidized using either wet oxidation or dry oxidation methods.

[0012] Furthermore, the thickness of the silicon oxide layer is 20 nm.

[0013] Furthermore, the formation of a richly doped silicon layer on the surface of the silicon oxide layer specifically involves:

[0014] With a power of 50W, a reaction gas of SiH4 or H2, and a gas flow rate of 1.0 sccm / cm 2 Under certain conditions, a highly doped silicon layer is formed on the surface of the silicon oxide layer.

[0015] Compared with existing technologies, this invention provides a method for manufacturing an arc-shaped semiconductor substrate. First, a hemispherical silicon layer is deposited on a raw semiconductor substrate. Then, the hemispherical silicon layer is oxidized to form a silicon oxide layer on its surface. Finally, a heavily doped silicon layer is formed on the surface of the silicon oxide layer, resulting in an arc-shaped semiconductor substrate. This invention, by growing a hemispherical silicon thin film on a semiconductor substrate, can form an arc-shaped semiconductor substrate with better performance, thereby solving the problems of unstable or insufficient curvature of the arc in existing technologies. Attached Figure Description

[0016] Figure 1 This is a flowchart of a preferred embodiment of a method for manufacturing an arc-shaped semiconductor substrate provided by the present invention. Detailed Implementation

[0017] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0018] This invention provides a method for manufacturing an arc-shaped semiconductor substrate, see [link to documentation]. Figure 1 The diagram shown is a flowchart of a preferred embodiment of a method for manufacturing an arc-shaped semiconductor substrate provided by the present invention, the method comprising steps S11 to S13:

[0019] Step S11: Deposit a hemispherical silicon layer on the original semiconductor substrate;

[0020] Step S12: Oxidize the hemispherical silicon layer to form a silicon oxide layer on the surface of the hemispherical silicon layer;

[0021] Step S13: A richly doped silicon layer is formed on the surface of the silicon oxide layer to obtain an arc-shaped semiconductor substrate.

[0022] In practice, a raw semiconductor substrate is prepared, and silicon is deposited on the raw semiconductor substrate to form a hemispherical silicon layer on the surface of the raw semiconductor substrate. Then, the surface of the hemispherical silicon layer is oxidized to form a silicon oxide layer on the surface of the hemispherical silicon layer. Finally, a doped silicon layer is grown on the surface of the silicon oxide layer to obtain the arc-shaped semiconductor substrate.

[0023] For example, the original semiconductor substrate can be a single-crystal silicon substrate, or other substrates can be used. The embodiments of the present invention do not specifically limit the application.

[0024] In one alternative embodiment, the deposition of a hemispherical silicon layer on the original semiconductor substrate specifically involves:

[0025] Using hot-wire chemical vapor deposition, silicon is deposited on a raw semiconductor substrate under conditions of 60–100 W power, SiH4 as the reactant gas, and a gas flow rate of 0.1–0.5 sccm, to grow a hemispherical silicon layer.

[0026] Specifically, in conjunction with the above embodiments, when depositing a hemispherical silicon layer on the original semiconductor substrate, hot filament chemical vapor deposition (HWCVD) can be used. Under the conditions of a power of 60W to 100W, a reaction gas of SiH4, and a SiH4 gas flow rate of 0.1sccm to 0.5sccm, silicon is deposited on the original semiconductor substrate in this atmosphere to grow a hemispherical silicon layer.

[0027] For example, the power value can be 60W, 65W, 70W, 75W, 80W, 85W, 90W, 95W or 100W, and can also be set according to actual needs. This embodiment of the invention does not make specific limitations.

[0028] For example, the gas flow rate of SiH4 can be 0.1 sccm, 0.2 sccm, 0.3 sccm, 0.4 sccm or 0.5 sccm, and can also be set according to actual needs. This embodiment of the invention does not make specific limitations.

[0029] It should be noted that during the deposition process, because HWCVD uses high-carbon electrodes, the deposited silicon material is relatively carbon-rich, which allows for good control over the morphology of the silicon thin film.

[0030] In one optional embodiment, the oxidation treatment of the hemispherical silicon layer specifically involves:

[0031] The hemispherical silicon layer is oxidized using either wet oxidation or dry oxidation methods.

[0032] Specifically, in conjunction with the above embodiments, when oxidizing the hemispherical silicon layer, conventional wet oxidation methods, dry oxidation methods, etc., can be used to oxidize the surface of the hemispherical silicon layer to form a silicon oxide layer.

[0033] In one alternative embodiment, the thickness of the silicon oxide layer is 20 nm.

[0034] Specifically, in conjunction with the above embodiments, after oxidizing the surface of the hemispherical silicon layer, the thickness of the silicon oxide layer formed on the surface of the hemispherical silicon layer is 20 nanometers.

[0035] It should be noted that, in addition to 20 nanometers, the thickness of the silicon oxide layer can also be adjusted according to actual needs, and the embodiments of the present invention do not impose specific limitations.

[0036] In one optional embodiment, forming a richly doped silicon layer on the surface of the silicon oxide layer specifically involves:

[0037] With a power of 50W, a reaction gas of SiH4 or H2, and a gas flow rate of 1.0 sccm / cm 2 Under certain conditions, a highly doped silicon layer is formed on the surface of the silicon oxide layer.

[0038] Specifically, in conjunction with the above embodiments, when forming a richly doped silicon layer on the surface of the silicon oxide layer, a power of 50W, a reaction gas of SiH4 or H2, and a gas flow rate of 1.0 sccm / cm can be used. 2 Under certain conditions, a highly doped silicon layer is grown on the surface of the silicon oxide layer.

[0039] Based on all the above embodiments, the implementation process of this solution is described below through the first specific embodiment, including: (1) preparing a raw semiconductor substrate, for example, the substrate is a single crystal silicon substrate; (2) using hot filament chemical vapor deposition (HWCVD) technology, under the conditions of a power of 60W, a reaction gas of SiH4, and a SiH4 gas flow rate of 0.1 sccm, depositing silicon on the raw semiconductor substrate in this atmosphere to grow a hemispherical silicon layer; (3) using conventional wet oxidation method, dry oxidation method, etc., to oxidize the surface of the hemispherical silicon layer to oxidize the surface of the hemispherical silicon layer to form a silicon oxide layer, and the thickness of the silicon oxide layer is 20nm; (4) under the conditions of a power of 50W, a reaction gas of SiH4 or H2, and a SiH4 or H2 gas flow rate of 1.0 sccm / cm. 2 Under certain conditions, a highly doped silicon layer is grown on the surface of the silicon oxide layer, thereby obtaining an arc-shaped semiconductor substrate.

[0040] Based on all the above embodiments, the implementation process of this solution is described below through a second specific embodiment, including: (1) preparing a raw semiconductor substrate, for example, a single-crystal silicon substrate; (2) using hot-wire chemical vapor deposition (HWCVD) technology, under the conditions of 80W power, SiH4 as the reactant gas, and a SiH4 gas flow rate of 0.3 sccm, depositing silicon on the raw semiconductor substrate in this atmosphere to grow a hemispherical silicon layer; (3) using conventional wet oxidation method, dry oxidation method, etc., to oxidize the surface of the hemispherical silicon layer to oxidize the surface of the hemispherical silicon layer to form a silicon oxide layer, and the thickness of the silicon oxide layer is 20 nm; (4) under the conditions of 50W power, SiH4 or H2 as the reactant gas, and a SiH4 or H2 gas flow rate of 1.0 sccm / cm. 2 Under certain conditions, a highly doped silicon layer is grown on the surface of the silicon oxide layer, thereby obtaining an arc-shaped semiconductor substrate.

[0041] Based on all the above embodiments, the implementation process of this solution is described below through a third specific embodiment, including: (1) preparing a raw semiconductor substrate, for example, a single-crystal silicon substrate; (2) using hot-wire chemical vapor deposition (HWCVD) technology, under the conditions of 100W power, SiH4 as the reactant gas, and a SiH4 gas flow rate of 0.5 sccm, depositing silicon on the raw semiconductor substrate in this atmosphere to grow a hemispherical silicon layer; (3) using conventional wet oxidation method, dry oxidation method, etc., to oxidize the surface of the hemispherical silicon layer to oxidize the surface of the hemispherical silicon layer to form a silicon oxide layer, and the thickness of the silicon oxide layer is 20 nm; (4) under the conditions of 50W power, SiH4 or H2 as the reactant gas, and a SiH4 or H2 gas flow rate of 1.0 sccm / cm. 2 Under certain conditions, a highly doped silicon layer is grown on the surface of the silicon oxide layer, thereby obtaining an arc-shaped semiconductor substrate.

[0042] In summary, the method for manufacturing an arc-shaped semiconductor substrate provided by this invention involves first depositing a hemispherical silicon layer on a raw semiconductor substrate; then oxidizing the hemispherical silicon layer to form a silicon oxide layer on its surface; and finally forming a heavily doped silicon layer on the surface of the silicon oxide layer to obtain the arc-shaped semiconductor substrate. This invention, by growing a hemispherical silicon thin film on a semiconductor substrate, can form an arc-shaped semiconductor substrate with better performance, thereby solving the problems of unstable or insufficient curvature of the arc in existing technologies. Furthermore, this invention has advantages such as a simple and easily controllable fabrication process, making it suitable for large-scale production of arc-shaped semiconductor substrates.

[0043] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for manufacturing an arc-shaped semiconductor substrate, characterized in that, include: A hemispherical silicon layer is deposited on the original semiconductor substrate; The hemispherical silicon layer is oxidized to form a silicon oxide layer on the surface of the hemispherical silicon layer; A richly doped silicon layer is formed on the surface of the silicon oxide layer to obtain an arc-shaped semiconductor substrate.

2. The method for manufacturing an arc-shaped semiconductor substrate as described in claim 1, characterized in that, The deposition of a hemispherical silicon layer on the original semiconductor substrate specifically involves: Using hot-wire chemical vapor deposition, silicon is deposited on a raw semiconductor substrate under conditions of 60–100 W power, SiH4 as the reactant gas, and a gas flow rate of 0.1–0.5 sccm, to grow a hemispherical silicon layer.

3. The method for manufacturing an arc-shaped semiconductor substrate as described in claim 1, characterized in that, The oxidation treatment of the hemispherical silicon layer specifically involves: The hemispherical silicon layer is oxidized using either wet oxidation or dry oxidation methods.

4. The method for manufacturing an arc-shaped semiconductor substrate as described in claim 1, characterized in that, The thickness of the silicon oxide layer is 20 nm.

5. The method for manufacturing an arc-shaped semiconductor substrate as described in claim 1, characterized in that, The formation of a richly doped silicon layer on the surface of the silicon oxide layer specifically involves: With a power of 50W, a reaction gas of SiH4 or H2, and a gas flow rate of 1.0 sccm / cm 2 Under certain conditions, a highly doped silicon layer is formed on the surface of the silicon oxide layer.

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