Atomic layer deposition apparatus

Abstract

The invention relates to an atomic layer deposition apparatus. The atomic layer deposition apparatus includes: a source gas supply unit for supplying a plurality of kinds of source gases; a source gas supply module connected to the source gas supply portion; a discharge part connected to the source gas supply module and disposed above the source gas supply module; and a discharge plasma supply part connected to the discharge part and used for applying discharge plasma to the discharge part. The discharge portion applies the discharge plasma received from the discharge plasma supply portion to the source gas supply module, sucks the discharge plasma applied to the source gas supply module, and discharges the suctioned discharge plasma to the outside.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to and all benefits arising therefrom of Korean Patent Application No. 10-2024-0121366, filed on September 6, 2024, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] This disclosure relates to atomic layer deposition apparatus. Background Technology

[0004] Typically, thin layers are deposited on substrates using methods such as physical vapor deposition (PVD) and chemical vapor deposition (CVD). However, as semiconductor devices become smaller, the demand for thin layers with fine patterns is increasing, and the use of atomic layer deposition (ALD) methods, which are capable of depositing even finer thin layers, has grown.

[0005] Atomic layer deposition (ALD) is a process for forming thin layers by stacking atomic layers one by one. ALD consists of three stages: adsorption, substitution, and production.

[0006] In the adsorption stage, gaseous precursors are injected into the processing chamber and adsorbed onto the surface of the substrate. In the substitution stage, gaseous reactants are injected into the processing chamber and provided onto the substrate, where a chemical substitution reaction occurs between the precursors and reactants adsorbed onto the substrate. In the production stage, a layer of material different from the precursors and reactants is formed based on the chemical substitution reaction. The formed layer is adsorbed onto the surface of the substrate as a single atomic layer. Through this process, a monolayer is deposited and formed on the substrate.

[0007] By repeating the above process, a thin layer of the desired thickness is achieved, and residual gas is discharged through an exhaust pipe. As the residual gas is discharged through the exhaust pipe, it forms a layer on the inner wall of the exhaust pipe. The layer accumulated on the inner wall of the exhaust pipe either blocks the exhaust pipe or falls onto the substrate as particles.

[0008] The layer formed on the inner wall of the discharge pipe is removed by cleaning free radicals injected into the pipe. The layer on the inner wall reacts with the cleaning free radicals injected into the pipe. However, the longer and more complex the discharge pipe, the more likely the cleaning free radicals are to recombine with each other without reacting with the layer formed on the inner wall. Therefore, cleaning efficiency decreases as the layer on the inner wall of the discharge pipe moves further away from the nozzle spraying the cleaning free radicals. Summary of the Invention

[0009] This disclosure provides an atomic layer deposition apparatus that can easily clean the emission section.

[0010] Embodiments of the present application provide an atomic layer deposition apparatus including a source gas supply part for supplying a plurality of source gases, a source gas supply module connected to the source gas supply part, a discharge part connected to and disposed above the source gas supply module, and a discharge plasma supply part connected to the discharge part and for applying a discharge plasma to the discharge part. The discharge part applies the discharge plasma received from the discharge plasma supply part to the source gas supply module, sucks in the discharge plasma applied to the source gas supply module, and discharges the sucked-in discharge plasma to the outside.

[0011] The source gas supply module can include a first source gas supply module for supplying a first source gas to the substrate and a second source gas supply module for supplying a second source gas to the substrate, wherein the plurality of source gases include the first source gas and the second source gas.

[0012] The first source gas supply module can include a plurality of first source gas nozzles connected to the source gas supply part, and the second source gas supply module can include a plurality of second source gas nozzles connected to the source gas supply part.

[0013] The first source gas nozzles and the second source gas nozzles can be alternately arranged in the order of the first source gas nozzles and the second source gas nozzles.

[0014] The atomic layer deposition apparatus can further include a plurality of partition walls disposed between the first source gas nozzles and the second source gas nozzles.

[0015] The discharge part can include a discharge pump, a first discharge pipe connected to the first source gas supply module, and a second discharge pipe connected to the second source gas supply module.

[0016] The atomic layer deposition apparatus can further include a discharge plasma pipe connected to the first discharge pipe and the second discharge pipe, and the discharge plasma supply part can apply the discharge plasma to the discharge plasma pipe.

[0017] The atomic layer deposition apparatus can further include a first valve for connecting the first discharge pipe and the discharge pump and controlling discharge of the discharge plasma sucked in from the first source gas supply module to the outside, and a second valve for connecting the second discharge pipe and the discharge pump and controlling discharge of the discharge plasma sucked in from the second source gas supply module to the outside.

[0018] The atomic layer deposition apparatus can further include a third valve for connecting the first discharge pipe and the discharge plasma pipe and controlling application of the discharge plasma to the first discharge pipe, and a fourth valve for connecting the second discharge pipe and the discharge plasma pipe and controlling application of the discharge plasma to the second discharge pipe.

[0019] The first exhaust pipe can receive the exhaust plasma from the exhaust plasma supply part and apply the exhaust plasma to the first source gas supply module, and the exhaust plasma applied to the first source gas supply module can be exhausted to the second exhaust pipe through the second source gas supply module.

[0020] When the third valve is opened, the exhaust plasma can be applied to the first exhaust pipe from the exhaust plasma supply part and the fourth valve can be closed, and when the second valve is opened, the exhaust plasma can be exhausted to the second exhaust pipe and the first valve can be closed.

[0021] The second exhaust pipe can receive the exhaust plasma from the exhaust plasma supply part and apply the exhaust plasma to the second source gas supply module, and the exhaust plasma applied to the second source gas supply module can be exhausted to the first exhaust pipe through the first source gas supply module.

[0022] When the fourth valve is opened, the exhaust plasma can be applied to the second exhaust pipe from the exhaust plasma supply part and the third valve can be closed, and when the first valve is opened, the exhaust plasma sucked from the first source gas supply module can be exhausted to the first exhaust pipe and the second valve can be closed.

[0023] The atomic layer deposition apparatus can further include a pipe connected to the first source gas supply module and the second source gas supply module, a pump connected to the pipe, and a fifth valve for connecting the pipe and the pump and controlling the exhaust of the exhaust plasma to the pump.

[0024] The first exhaust pipe can receive the exhaust plasma and apply the exhaust plasma to the first source gas supply module, the second exhaust pipe can receive the exhaust plasma and apply the exhaust plasma to the second source gas supply module, and the exhaust plasma applied to the first source gas supply module and the second source gas supply module can be exhausted through the pipe.

[0025] When the third valve and the fourth valve are opened, the exhaust plasma can be applied to the first exhaust pipe and the second exhaust pipe and the first valve and the second valve can be closed, and when the fifth valve is opened, the exhaust plasma can be exhausted to the pump.

[0026] Embodiments of the present application provide an atomic layer deposition apparatus including a source gas supply part for supplying a plurality of source gases including a first source gas and a second source gas, a first source gas supply module connected to the source gas supply part and for supplying the first source gas, a second source gas supply module connected to the source gas supply part and for supplying the second source gas, a purge gas supply module disposed between the first source gas supply module and the second source gas supply module, a purge gas supply part for supplying a purge gas to the purge gas supply module, a discharge part connected to the first source gas supply module and the second source gas supply module and disposed above the first source gas supply module and the second source gas supply module and the purge gas supply module, and a discharge plasma supply part connected to the discharge part and for applying a discharge plasma to the discharge part. The discharge part applies the discharge plasma received from the discharge plasma supply part to the first source gas supply module and the second source gas supply module, and the first source gas supply module and the second source gas supply module discharge the discharge plasma applied thereto to the discharge part.

[0027] The purge gas supply module can have a slit shape.

[0028] The first source gas supply module can include a first source gas nozzle connected to the source gas supply part, the second source gas supply module can include a second source gas nozzle connected to the source gas supply part, and the purge gas supply module can include a purge gas nozzle connected to the purge gas supply part.

[0029] The first source gas nozzle and the second source gas nozzle and the purge gas nozzle can be repeatedly arranged in the order of the first source gas nozzle, the purge gas nozzle, and the second source gas nozzle.

[0030] According to the atomic layer deposition apparatus, the discharge plasma is directly applied to the discharge tube, and thus, the deposit layer accumulated on the inner wall of the discharge tube is more effectively cleaned. BRIEF DESCRIPTION OF DRAWINGS

[0031] The above and other advantages of the present disclosure will become readily apparent by reference to the following detailed description when considered in connection with the accompanying drawings wherein: Figure 1 is a perspective view of an atomic layer deposition apparatus according to an embodiment of the present disclosure; Figures 2A to 2C is a view illustrating an atomic layer deposition method according to an embodiment of the present disclosure; Figure 3 is a sectional view of a pixel including a thin layer formed by the atomic layer deposition apparatus shown in Figure 1 Figure 4 is a sectional view of a pixel including a thin layer formed by the atomic layer deposition apparatus shown in Figure 1 ​a cross-sectional view taken along line I-I' shown in FIG. 1; Figure 5 is along Figure 1 a cross-sectional view taken along line II-II' shown in FIG. 2; Figure 6A is a view showing a process of supplying a first source gas to a substrate; Figure 6B is a view showing a process of supplying a second source gas to a substrate; Figure 7A and Figure 7B is a view showing an operation of discharging the plasma supply part after forming an atomic layer on the substrate according to an embodiment of the present disclosure; Figure 8 is a view showing an operation of discharging the plasma supply part after forming an atomic layer on the substrate according to an embodiment of the present disclosure; Figure 9A is a cross-sectional view of a deposition module according to an embodiment of the present disclosure; and Figure 9B is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0032] In the present disclosure, it will be understood that when an element (or area, layer, or part) is referred to as being "on", "connected to", or "coupled to" another element or layer, it can be directly on, directly connected to, or directly coupled to the other element or layer, or one intervening element or layer can exist.

[0033] The same reference numerals are used throughout the drawings and the same elements are represented by the same reference numerals throughout the description. In the drawings, the thickness, ratio, and size of components are exaggerated for efficiency of description.

[0034] As used herein, the term "and / or" can include any and all combinations of one or more of the associated listed items.

[0035] It will be understood that, although the terms "first", "second", etc. can be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Thus, a first element discussed below could be termed a second element without departing from the teachings of the present disclosure. As used herein, unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" are intended to include the plural forms as well.

[0036] For ease of description, spatial relative terms such as "below", "under", "lower", "above", "upper" and the like can be used herein to describe one element's or feature's relationship to another element or feature as illustrated in the drawings.

[0037] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0038] It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0039] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0040] Figure 1 is a perspective view of an atomic layer deposition apparatus ADD according to an embodiment of the present disclosure.

[0041] Referring to Figure 1 , the atomic layer deposition apparatus ADD can include a stage STG and a deposition module DM disposed on the stage STG. The stage STG can have a rectangular shape defined by a long side extending in a first direction DR1 and a short side extending in a second direction DR2 intersecting the first direction DR1.

[0042] Hereinafter, a direction substantially perpendicular to a plane defined by the first direction DR1 and the second direction DR2 can be referred to as a third direction DR3. In the present disclosure, the expression "when viewed in the plane" can mean a state of being viewed in the third direction DR3.

[0043] A substrate SUB can be disposed on an upper surface of the stage STG. The substrate SUB can have a rectangular shape defined by a long side extending in the first direction DR1 and a short side extending in the second direction DR2 intersecting the first direction DR1.

[0044] The deposition module DM can be disposed on the substrate SUB. The deposition module DM can move back and forth on the substrate SUB in the first direction DR1 and a direction opposite to the first direction DR1, however, the present disclosure should not be limited to or by this. According to an embodiment, the deposition module DM can be fixed at a certain position, and then the substrate SUB can move back and forth in the first direction DR1 and a direction opposite to the first direction DR1. In this case, the stage STG can be implemented as a movable stage that moves the substrate SUB.

[0045] The deposition module DM can have a rectangular shape defined by a short side extending in a first direction DR1 and a long side extending in a second direction DR2 intersecting the first direction DR1. That is, the deposition module DM can further extend in the second direction DR2 rather than the first direction DR1.

[0046] The deposition module DM can be a deposition head. The deposition module DM can eject a deposition material onto the substrate SUB to form a thin layer on the substrate SUB. The deposition material can be deposited in an atomic layer unit. The structure and operation of the deposition module DM will be described later in detail.

[0047] Figures 2A to 2C is a view illustrating an atomic layer deposition method according to an embodiment of the disclosure.

[0048] As an example, Figures 2A to 2C A process of forming a silicon oxide layer using a plasma atomic layer deposition method is illustrated.

[0049] Referring to Figure 2A A precursor PCS in a gaseous form can be ejected onto the substrate SUB. The precursor PCS can be referred to as a first source gas. As an example, the precursor PCS can include silane (SiH4). The precursor PCS can be adsorbed onto the substrate SUB. As an example, silane (SiH4) molecules can be adsorbed onto the substrate SUB.

[0050] The precursor PCS can be adsorbed onto the substrate SUB as a single layer only. Even though the silane (SiH4) is continuously supplied as the precursor PCS, only one layer can be formed on the substrate SUB. This can be defined as a self-limiting reaction. The remaining precursor PCS not adsorbed onto the substrate SUB can be discharged to the outside.

[0051] Referring to Figure 2B A reactant RCT in a gaseous form can be ejected onto the substrate SUB. The reactant RCT can be referred to as a second source gas. As an example, the reactant RCT can be O2 or N2O. Oxygen molecules of O2 or N2O can be supplied onto the substrate SUB. The reactant RCT can be decomposed by the plasma P and can be supplied onto the substrate SUB as radicals.

[0052] The reactant RCT can react with the precursor PCS through a chemical substitution reaction. For example, O2 or N2O can react with SiH4 through a chemical substitution reaction. As with the precursor PCS, even though the reactant RCT (e.g., O2 or N2O) is continuously supplied, only one layer can undergo adsorption or a chemical substitution reaction. The remaining reactant RCT can be discharged to the outside.

[0053] Referring to Figure 2CBased on the chemical substitution reaction between the reactant RCT and the precursor PCS, an atomic layer ATL can be formed on the substrate SUB. As an example, when the reactant RCT is O2, O2 can react with SiH4 through a chemical substitution reaction, and only SiO2 can be formed as a monolayer on the substrate SUB, and the remaining gaseous GS (e.g., H2O) after the chemical substitution reaction can be emitted to the outside.

[0054] Furthermore, when the reactant RCT is N2O, N2O can react with SiH4 through a chemical substitution reaction, and only SiO2 can be formed as a monolayer on the substrate SUB. After the chemical substitution reaction, the remaining gas GS (e.g., N2 or H2) can be emitted to the outside.

[0055] Figure 3 It includes by Figure 1 A cross-sectional view of the pixel PX formed by the atomic layer deposition apparatus shown.

[0056] refer to Figure 3 A pixel (PX) may include a transistor (TR) and a light-emitting element (OLED). The light-emitting element (OLED) may include a first electrode (or anode) (AE), a second electrode (or cathode) (CE), a hole control layer (HCL), an electron control layer (ECL), and a light-emitting layer (EML).

[0057] Transistors (TRs) and light-emitting elements (OLEDs) can be mounted on a substrate (SUB). As an example, Figure 3 The diagram shows a transistor TR; however, a pixel PX may include multiple transistors and at least one capacitor to drive the light-emitting element OLED.

[0058] The display area DA may include a light-emitting area LA corresponding to each pixel PX and a non-light-emitting area NLA surrounding the light-emitting area LA. The light-emitting element OLED may be disposed in the light-emitting area LA.

[0059] The substrate SUB may include a flexible plastic material, such as polyimide (PI). A buffer layer BFL may be disposed on the substrate SUB, and the buffer layer BFL may be an inorganic layer.

[0060] Semiconductor patterns SP can be deposited on the buffer layer BFL. Semiconductor patterns SP can be formed by... Figure 1 The atomic layer deposition apparatus shown is formed by ADD. The semiconductor pattern SP can include oxide semiconductors. As an example, oxide semiconductors can include transparent conductive oxides (TCOs), such as indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), zinc oxide (ZnO), or indium oxide (In2O3).

[0061] A semiconductor pattern SP can include multiple regions that are separated from each other based on whether the metal oxide is reduced. The regions where the metal oxide is reduced (hereinafter referred to as "reduced regions") have a higher conductivity than the regions where the metal oxide is not reduced (hereinafter referred to as "non-reduced regions"). The reduced regions can essentially serve as the source or drain electrodes of a transistor. The non-reduced regions can essentially correspond to the active portion (or channel) of a transistor.

[0062] The source (S), active portion (A), and drain (D) of transistor TR can be formed from a semiconductor pattern (SP). A first insulating layer (INS1) can be disposed on the semiconductor pattern (SP). The gate (G) of transistor TR can be disposed on the first insulating layer (INS1). A second insulating layer (INS2) can be disposed on the gate (G). A third insulating layer (INS3) can be disposed on the second insulating layer (INS2).

[0063] The connecting electrode CNE may include a first connecting electrode CNE1 and a second connecting electrode CNE2 to connect the transistor TR to the light-emitting element OLED. The first connecting electrode CNE1 may be disposed on the third insulating layer INS3 and may be connected to the drain electrode D via a first contact hole CH1 defined through the first insulating layer INS1, the second insulating layer INS2 and the third insulating layer INS3.

[0064] A fourth insulating layer INS4 may be disposed on the first connecting electrode CNE1. A fifth insulating layer INS5 may be disposed on the fourth insulating layer INS4. A second connecting electrode CNE2 may be disposed on the fifth insulating layer INS5. The second connecting electrode CNE2 may be connected to the first connecting electrode CNE1 via a second contact hole CH2 defined through the fourth insulating layer INS4 and the fifth insulating layer INS5.

[0065] The sixth insulating layer INS6 can be disposed on the second connecting electrode CNE2. Each of the first insulating layers INS1 to the sixth insulating layer INS6 can be an inorganic layer or an organic layer.

[0066] A first electrode AE ​​can be disposed on a sixth insulating layer INS6. The first electrode AE ​​can be connected to a second connecting electrode CNE2 via a third contact hole CH3 defined through the sixth insulating layer INS6. A pixel defining layer PDL can be disposed on the first electrode AE ​​and the sixth insulating layer INS6. The pixel defining layer PDL can be provided with an opening PX_OP defined therethrough to expose a predetermined portion of the first electrode AE.

[0067] The hole control layer (HCL) can be disposed on the first electrode (AE) and the pixel definition layer (PDL). The hole control layer (HCL) may include a hole transport layer and a hole injection layer.

[0068] The luminescent layer (EML) can be disposed on the hole control layer (HCL). The EML can be disposed in the region corresponding to the opening (PX_OP). The EML can include organic and / or inorganic materials. The EML can produce light of one of the colors red, green, and blue.

[0069] The electronic control layer (ECL) can be disposed on the light-emitting layer (EML) and the hole control layer (HCL). The ECL may include an electron transport layer and an electron injection layer. The second electrode (CE) can be disposed on the ECL.

[0070] A thin-film encapsulation layer (TFE) can be disposed on the second electrode (CE) to cover the pixel (PX). The thin-film encapsulation layer (TFE) may include a first encapsulation layer (EN1) disposed on the second electrode (CE), a second encapsulation layer (EN2) disposed on the first encapsulation layer (EN1), and a third encapsulation layer (EN3) disposed on the second encapsulation layer (EN2).

[0071] The first encapsulation layer EN1 and the third encapsulation layer EN3 may include inorganic insulating layers and can protect the pixel PX from moisture and oxygen. The second encapsulation layer EN2 may include organic insulating layers and can protect the pixel PX from impurities such as dust particles.

[0072] A first voltage can be applied to the first electrode AE ​​via a transistor TR, and a second voltage having a voltage level lower than the first voltage can be applied to the second electrode CE. Holes and electrons injected into the light-emitting layer EML can recombine to generate excitons, and the light-emitting element OLED can emit light by excitons returning from the excited state to the ground state.

[0073] Figure 4 It is along Figure 1 The sectional view shown is taken by line I-I'.

[0074] Figure 4 A cross-section of the deposition module DM is shown, taken along line I-I' parallel to the second direction DR2.

[0075] As an example, the components of the atomic layer deposition apparatus ADD connected to the deposition module DM are shown together with the deposition module DM.

[0076] refer to Figure 4 The atomic layer deposition apparatus (ADD) may include a deposition module DM, a first source gas supply unit SGP1 and a second source gas supply unit SGP2, a first source gas valve SVL1 and a second source gas valve SVL2, valves VL1 to VL4, an emission unit ES, an emission plasma supply unit ERPS, and an emission plasma tube PPIP.

[0077] The deposition module DM may include a first source gas supply module SGM1, a second source gas supply module SGM2, and a barrier wall IW. The first source gas supply module SGM1, the second source gas supply module SGM2, and the barrier wall IW may be housed in a housing (not shown).

[0078] In this embodiment, the lower part of the housing can be opened, and thus the lower parts of the first source gas supply module SGM1 and the second source gas supply module SGM2 can be exposed to the outside.

[0079] The first source gas supply module SGM1 and the second source gas supply module SGM2 can inject different source gases onto the substrate (not shown) below the deposition module DM. The first source gas supply module SGM1 and the second source gas supply module SGM2 can be connected to the first source gas supply section SGP1 and the second source gas supply section SGP2 that supply source gases.

[0080] The first source gas supply unit SGP1 and the second source gas supply unit SGP2 can be connected to the first source gas nozzle SNZ1 and the second source gas nozzle SNZ2 respectively through source gas valves SVL1 and SVL2.

[0081] The first source gas valve SVL1 can be connected to the first source gas supply unit SGP1 and the first source gas nozzle SNZ1. The first source gas valve SVL1 can be connected to the first source gas nozzle SNZ1 via a pipe. The first source gas valve SVL1 can be opened and closed to control the supply of first source gas to the first source gas nozzle SNZ1.

[0082] The second source gas valve SVL2 can be connected to the second source gas supply unit SGP2 and the second source gas nozzle SNZ2. The second source gas valve SVL2 can be connected to the second source gas nozzle SNZ2 via a pipe. The second source gas valve SVL2 can be opened and closed to control the supply of second source gas to the second source gas nozzle SNZ2.

[0083] The first source gas supply module SGM1 and the second source gas supply module SGM2 can be connected to a radio frequency (“RF”) generator RFG. The RF generator RFG can generate RF plasma by applying RF energy to the gas. The RF generator RFG can apply the RF plasma to the first source gas supply module SGM1 and the second source gas supply module SGM2. The first source gas supply module SGM1 and the second source gas supply module SGM2 can use the RF plasma to improve the reactivity of the source gas.

[0084] The first source gas supply module SGM1 can be connected to the first source gas supply section SGP1. The first source gas supply module SGM1 can supply a first source gas to a substrate (not shown) below the deposition module DM. The first source gas can be limited to the aforementioned precursor PCS. As an example, the atomic layer deposition apparatus ADD can deposit silicon oxide (SiO2), an oxide semiconductor, on a substrate (not shown) below the deposition module DM. In this case, the first source gas may include silane (SiH4).

[0085] The first source gas supply module SGM1 may include a first source gas nozzle SNZ1 connected to the first source gas supply unit SGP1. The first source gas nozzle SNZ1 may be arranged in the second direction DR2. Each of the first source gas nozzles SNZ1 may be provided with a plurality of first source gas injection holes SH1 defined therethrough. The first source gas supply module SGM1 may inject first source gas through the first source gas injection holes SH1.

[0086] The second source gas supply module SGM2 can be connected to the second source gas supply section SGP2. The second source gas supply module SGM2 can supply second source gas to the substrate (not shown) below the deposition module DM. The second source gas supply module SGM2 can be spaced apart from the first source gas supply module SGM1 in the second direction DR2.

[0087] The second source gas can be defined as the reactant RCT. In this case, the second source gas may include O2 or N2O. The second source gas can be decomposed by plasma P and can be supplied as a free radical to the substrate SUB.

[0088] The second source gas supply module SGM2 may include a second source gas nozzle SNZ2 connected to the second source gas supply unit SGP2. The second source gas nozzle SNZ2 may be arranged in the second direction DR2. Each of the second source gas nozzles SNZ2 may be provided with multiple second source gas injection holes SH2. The second source gas supply module SGM2 may inject second source gas through the second source gas injection holes SH2.

[0089] The first source gas supply module SGM1 and the second source gas supply module SGM2 can be divided into multiple regions along the second direction DR2, and the first source gas nozzle SNZ1 and the second source gas nozzle SNZ2 can be confined within the divided regions. The first source gas supply module SGM1 can be divided by the first source gas nozzle SNZ1, and the second source gas supply module SGM2 can be divided by the second source gas nozzle SNZ2. The first source gas nozzle SNZ1 and the second source gas nozzle SNZ2 can be arranged repeatedly and alternately in the order of the first source gas nozzle SNZ1 and the second source gas nozzle SNZ2.

[0090] The emission unit ES may include an emission pump EPMP, a first emission pipe EPIP1, a second emission pipe EPIP2, and valves VL1 and VL2. The emission unit ES may be connected to a first source gas supply module SGM1 and a second source gas supply module SGM2. The emission unit ES may be connected to the first source gas supply module SGM1 and the second source gas supply module SGM2 via the first emission pipe EPIP1 and the second emission pipe EPIP2.

[0091] The discharge pump EPMP can apply discharge pressure (e.g., low pressure) to the first discharge pipe EPIP1 and the second discharge pipe EPIP2. The discharge pump EPMP can be connected to the first discharge pipe EPIP1 and the second discharge pipe EPIP2. The discharge pump EPMP can be connected to the first source gas supply module SGM1 and the second source gas supply module SGM2 via the first discharge pipe EPIP1 and the second discharge pipe EPIP2, and valves VL1 and VL2. The first valve VL1 connects the discharge pump EPMP to the first discharge pipe EPIP1. The second valve VL2 connects the discharge pump EPMP to the second discharge pipe EPIP2.

[0092] The exhaust pump EPMP can be connected to the first exhaust pipe EPIP1 and the second exhaust pipe EPIP2 via the first valve VL1 and the second valve VL2, respectively, and can apply exhaust pressure to the first source gas supply module SGM1 and the second source gas supply module SGM2. The first valve VL1 can open and close to control the application of exhaust pressure to the first source gas supply module SGM1. The first valve VL1 can connect the exhaust pump EPMP to the first source gas supply module SGM1 and can control the emission of exhaust plasma output from the first source gas supply module SGM1.

[0093] The second valve VL2 can be opened and closed to control the application of discharge pressure to the second source gas supply module SGM2. The second valve VL2 can connect the discharge pump EPMP to the second discharge pipe EPIP2 and can control the discharge of the discharge plasma output from the second source gas supply module SGM2. Due to the discharge pressure (e.g., low pressure), the gas remaining in the processing chamber can be discharged to the outside through the first discharge pipe EPIP1 and the second discharge pipe EPIP2.

[0094] The emission plasma supply unit ERPS can apply emission plasma to the emission unit ES. The emission plasma supply unit ERPS can be connected to the emission unit ES via the emission plasma tube PPIP and valves VL3 and VL4. The emission plasma tube PPIP can be connected to the first emission tube EPIP1 and the second emission tube EPIP2.

[0095] The third valve VL3 can be connected to the first discharge tube EPIP1. The third valve VL3 can connect the first discharge tube EPIP1 and the discharge plasma tube PPIP, and can control the application of the discharge plasma. The third valve VL3 can be opened and closed to control the application of the discharge plasma to the first discharge tube EPIP1.

[0096] The fourth valve, VL4, can be connected to the second discharge tube, EPIP2. The fourth valve, VL4, can be opened and closed to control the application of discharged plasma to the second discharge tube, EPIP2. The fourth valve, VL4, can be connected to both the second discharge tube, EPIP2, and the discharge plasma tube, PPIP, and can control the application of discharged plasma.

[0097] The emission plasma supply unit (ERPS) can apply emission plasma remotely. The ERPS can be configured to be spaced apart from the processing chamber (not shown) and can apply emission plasma via the emission plasma tube (PPIP). The ERPS can apply emission plasma to the emission plasma tube (PPIP).

[0098] For example, the emission plasma supply unit (ERPS) can generate and supply fluorine (F) radicals. The emission plasma may contain nitrogen trifluoride (NF3). The emission plasma can be applied to the first emission tube EPIP1 and the second emission tube EPIP2 to clean the deposited layers in the first emission tube EPIP1 and the second emission tube EPIP2. The deposited layers in the first emission tube EPIP1 and the second emission tube EPIP2 can be decomposed by the emission plasma, and silicon tetrafluoride (SiF4) can be generated. The generated silicon tetrafluoride can be emitted to the outside through the first emission tube EPIP1 and the second emission tube EPIP2.

[0099] In other words, the emission unit ES can apply emission plasma to the first source gas supply module SGM1 and the second source gas supply module SGM2, and can also absorb and emit emission plasma supplied to the first source gas supply module SGM1 and the second source gas supply module SGM2.

[0100] Figure 5 It is along Figure 1 The sectional view shown is taken from line II-II'. Figure 5 This is a cross-sectional view of the first source gas supply module SGM1, the second source gas supply module SGM2, and the barrier wall IW.

[0101] refer to Figure 5The deposition module DM may include a first source gas supply module SGM1, a second source gas supply module SGM2, and a barrier wall IW. Multiple barrier walls IWs may be configured, and these multiple barrier walls IWs may be positioned between the first source gas nozzle SNZ1 and the second source gas nozzle SNZ2.

[0102] The first source gas injection orifice SH1 and the second source gas injection orifice SH2 can be defined by passing through the first source gas nozzle SNZ1 and the second source gas nozzle SNZ2, respectively. As an example, the first source gas injection orifice SH1 and the second source gas injection orifice SH2 can be arranged in the first direction DR1 and the second direction DR2. Figure 5 As shown, the first source gas injection hole SH1 and the second source gas injection hole SH2 may be arranged in a matrix in the first source gas nozzle SNZ1 and the second source gas nozzle SNZ2; however, this disclosure should not be limited thereto or thereby restricted.

[0103] The first gas supply module SGM1, the second gas supply module SGM2, and the barrier wall IW may extend longer in the first direction DR1 than in the second direction DR2, to have a rod shape. Each barrier wall IW may be disposed between the first gas supply module SGM1 and the second gas supply module SGM2. The barrier wall IW may have a slit shape.

[0104] Figure 6A This is a view showing the process of supplying the first source gas to the substrate SUB. Figure 6B This is a view illustrating the process of supplying a second source gas to the substrate SUB. As an example, Figure 6A and Figure 6B It shows the relationship with Figure 4 The cross section corresponding to the cross section.

[0105] refer to Figure 6A The first source gas valve SVL1 can be opened, and the second source gas valve SVL2 can be closed. The first source gas supply unit SGP1 can supply first source gas to the first source gas supply module SGM1 through the opened first source gas valve SVL1.

[0106] The first source gas can be supplied to the first source gas nozzle SNZ1 through the first source gas valve SVL1 and the first source gas pipe SPIP1. The first source gas can then be sprayed onto the substrate SUB through the first source gas nozzle SNZ1. Therefore, the first source gas can be deposited on the substrate SUB.

[0107] After the first source gas is supplied to the upper surface of the substrate SUB, the supply of the first source gas can be stopped. When the supply of the first source gas stops, the first source gas valve SVL1 can be closed.

[0108] Even if the supply of the primary gas is stopped, the residual primary gas can still remain in the primary gas supply module SGM1. The discharge pump EPMP can apply discharge pressure to the primary gas supply module SGM1 to remove the residual primary gas in the primary gas supply module SGM1.

[0109] The discharge pump EPMP applies discharge pressure to the first source gas supply module SGM1 via the first discharge pipe EPIP1 and the first valve VL1. When the discharge pump EPMP is operating, the first valve VL1 can be opened, and the second valve VL2, the third valve VL3, and the fourth valve VL4 can be closed. Discharge pressure is applied to the first source gas supply module SGM1 through the open first valve VL1. Residual first source gas can be discharged via the first discharge pipe EPIP1 at discharge pressure (e.g., low pressure).

[0110] refer to Figure 6B The second source gas valve SVL2 can be opened, and the first source gas valve SVL1 can be closed. The second source gas supply unit SGP2 can supply second source gas to the second source gas supply module SGM2 through the opened second source gas valve SVL2.

[0111] The second source gas can be supplied to the second source gas nozzle SNZ2 through the second source gas valve SVL2 and the second source gas pipe SPIP2. The second source gas can then be sprayed onto the substrate SUB through the second source gas nozzle SNZ2. Therefore, the second source gas can be deposited on the substrate SUB.

[0112] After the second source gas is supplied to the upper surface of the substrate SUB, the supply of the second source gas can be stopped. The supply of the second source gas can also be stopped when the second source gas valve SVL2 is closed.

[0113] Even if the supply of the secondary gas is stopped, the residual secondary gas can still remain in the secondary gas supply module SGM2. The discharge pump EPMP can apply discharge pressure to the secondary gas supply module SGM2 to remove the residual secondary gas in the secondary gas supply module SGM2.

[0114] The discharge pump EPMP applies discharge pressure to the second source gas supply module SGM2 via the second discharge pipe EPIP2 and the second valve VL2. When the discharge pump EPMP is operating, the second valve VL2 can be opened, and the first valve VL1, the third valve VL3, and the fourth valve VL4 can be closed. Discharge pressure is applied to the second source gas supply module SGM2 through the open second valve VL2. Residual second source gas can be discharged via the second discharge pipe EPIP2 at discharge pressure (e.g., low pressure).

[0115] When the deposition module DM moves from the rightmost position of the substrate SUB to the leftmost position of the substrate SUB, a first source gas can be provided on the substrate SUB first, and then a second source gas can be sequentially provided on the substrate SUB. Since the first source gas is deposited on the substrate SUB and then the second source gas is deposited on the substrate SUB, an atomic layer, such as silicon oxide (SiO2), can be formed on the substrate SUB.

[0116] The above process can be repeated to form an atomic layer with the desired thickness. For example, due to the reciprocating motion of the deposition module DM in the first direction DR1 and the direction opposite to the first direction DR1, the atomic layer can be repeatedly deposited on the substrate SUB.

[0117] Figure 7A and Figure 7B This is a view illustrating the operation of the plasma emission supply unit (ERPS) after an atomic layer is formed on a substrate according to an embodiment of the present disclosure. As an example, Figure 7A and Figure 7B It shows the relationship with Figure 4 The cross-section corresponding to the cross-section. In Figure 7B The main descriptions and references will be provided in the following sections. Figure 7A The operations described are different operations.

[0118] refer to Figure 7A When the third valve VL3 is open, emitted plasma is applied to the first emission tube EPIP1, and the fourth valve VL4 can be closed. The emitted plasma supply unit ERPS can apply emitted plasma to the first emission tube EPIP1 through the third valve VL3 and the emitted plasma tube PPIP. The emitted plasma can react with the deposit layer on the inner wall of the first emission tube EPIP1 and can remove the deposit layer. The emitted plasma can be applied to the first source gas supply module SGM1 through the first emission tube EPIP1.

[0119] As an example, the emitted plasma may contain fluorine (F) radicals. The emitted plasma may contain nitrogen trifluoride (NF3). The deposit layer in the first emission tube EPIP1 can be decomposed by fluorine (F) radicals. The deposit layer in the first emission tube EPIP1 can be decomposed into silicon tetrafluoride (SiF4) by fluorine (F) radicals.

[0120] The first discharge pipe EPIP1 can receive discharged plasma and apply it to the first source gas supply module SGM1. The discharged plasma applied to the first source gas supply module SGM1 can be discharged to the second discharge pipe EPIP2 through the second source gas supply module SGM2. When the second valve VL2 is open, the discharged plasma can be discharged through the second discharge pipe EPIP2, and the first valve VL1 can be closed.

[0121] In detail, the deposit layer in the first discharge pipe EPIP1 can be cleaned and discharged by the discharge pump EPMP. The discharge pump EPMP can apply discharge pressure to the second source gas supply module SGM2 through the second valve VL2 and the second discharge pipe EPIP2. The cleaned deposit layer in the first discharge pipe EPIP1 can be discharged through the second source gas supply module SGM2.

[0122] That is, the cleaned deposit layer in the first discharge pipe EPIP1 can move from the upper side to the lower side of the first source gas supply module SGM1, and can move from the lower side to the upper side of the second source gas supply module SGM2 through the discharge pressure (e.g., low pressure), and can then be discharged to the outside through the second discharge pipe EPIP2. Therefore, since the emission plasma supply unit ERPS applies the generated emission plasma directly to the first discharge pipe EPIP1, the first discharge pipe EPIP1 can be cleaned more effectively.

[0123] In addition, a portion of the emitted plasma can be applied to the lower part of the first source gas supply module SGM1, and can remove deposits generated in the area below the deposition module DM instead of the substrate (not shown).

[0124] refer to Figure 7B When the fourth valve VL4 is open, the emitted plasma can be applied to the second emission tube EPIP2, and the third valve VL3 can be closed. When the first valve VL1 is open, the emitted plasma can be emitted through the first emission tube EPIP1, and the second valve VL2 can be closed.

[0125] The second exhaust pipe EPIP2 can receive the exhaust plasma and can apply the exhaust plasma to the second source gas supply module SGM2.

[0126] The emission plasma supply unit ERPS can apply emission plasma to the second emission tube EPIP2 via the fourth valve VL4 and the emission plasma tube PPIP. The emission plasma can react with and remove the deposit layer on the inner wall of the second emission tube EPIP2. In this embodiment, the cleaning process of the first emission tube EPIP1 is performed first, but it should not be limited to this or restricted by it, and the cleaning process of the second emission tube EPIP2 can be performed first.

[0127] The deposit layer in the second discharge pipe EPIP2 can be discharged by the discharge pump EPMP after cleaning. The discharge pump EPMP can apply discharge pressure (e.g., low pressure) to the first source gas supply module SGM1 through the first valve VL1 and the first discharge pipe EPIP1. The cleaned deposit layer in the second discharge pipe EPIP2 can be discharged through the first source gas supply module SGM1.

[0128] In other words, the cleaned deposit layer in the second discharge pipe EPIP2 can move from the upper side to the lower side of the second source gas supply module SGM2, can move from the lower side to the upper side of the first source gas supply module SGM1 by the discharge pressure, and can then be discharged through the first discharge pipe EPIP1.

[0129] Figure 8 This is a view showing the operation of the plasma supply unit ERPS after an atomic layer is formed on a substrate according to an embodiment of the present disclosure.

[0130] refer to Figure 8 The atomic layer deposition apparatus (ADD) may include a pipe PIP connected to a first source gas supply module SGM1 and a second source gas supply module SGM2, a pump PMP connected to the pipe PIP, and a fifth valve VL5 connecting the pipe PIP and the pump PMP and controlling the emission of plasma.

[0131] When the third valve VL3 and the fourth valve VL4 are open, emitted plasma can be applied to the first emission tube EPIP1 and the second emission tube EPIP2, and the first valve VL1 and the second valve VL2 can be closed. The emitted plasma supply unit ERPS can apply emitted plasma to the first emission tube EPIP1 and the second emission tube EPIP2 through the third valve VL3 and the fourth valve VL4 and the emitted plasma tube PPIP. The emitted plasma can react with the deposit layer on the inner wall of the first emission tube EPIP1 and the second emission tube EPIP2, and can remove the deposit layer.

[0132] The emitted plasma can be applied to the first source gas supply module SGM1 and the second source gas supply module SGM2 through the first emission pipe EPIP1 and the second emission pipe EPIP2, respectively. The deposit layers in the first emission pipe EPIP1 and the second emission pipe EPIP2 can be decomposed by fluorine (F) radicals.

[0133] The deposit layers in the first discharge pipe EPIP1 and the second discharge pipe EPIP2 can be discharged by the pump PMP after cleaning. The pump PMP can apply discharge pressure to the first source gas supply module SGM1 and the second source gas supply module SGM2 through the fifth valve VL5 and the pipes PIP. When the fifth valve VL5 is open, the discharged plasma can be discharged to the pump PMP.

[0134] The cleaned deposit layers in the first discharge pipe EPIP1 and the second discharge pipe EPIP2 can be discharged through the first source gas supply module SGM1 and the second source gas supply module SGM2, respectively. The discharge plasma applied to the first source gas supply module SGM1 and the second source gas supply module SGM2 can be discharged through the PIP pipe.

[0135] Figure 9A This is a cross-sectional view of a deposition module DM according to an embodiment of the present disclosure. As an example, Figure 9A It shows the relationship with Figure 5 The cross-section corresponding to the cross-section. In Figure 9A The main descriptions and references will be provided in the following sections. Figure 5 The components described are different components.

[0136] refer to Figure 9A The purge gas supply module (PGM) can be positioned between the first source gas supply module (SGM1) and the second source gas supply module (SGM2). As an example, the barrier wall IW1-2 can be defined as the purge gas supply module (PGM). The purge gas supply module (PGM) can have a slit shape.

[0137] The purge gas supply module (PGM) may include a connection to the purge gas supply unit (PSP) (see reference). Figure 9B The purge gas nozzle PNZ may be provided with a purge gas injection orifice PH that defines it. The purge gas supply module PGM can inject purge gas through the purge gas injection orifice PH. Figure 9A A representative example is shown, depicting a single purge gas injection orifice PH defined by a purge gas nozzle PNZ; however, the number of purge gas injection orifices PH should not be limited to this or thus restricted. For example, multiple purge gas injection orifices PH may be provided.

[0138] The first source gas nozzle SNZ1, the second source gas nozzle SNZ2, and the purge gas nozzle PNZ can be repeatedly set in the order of the first source gas nozzle SNZ1, the purge gas nozzle PNZ, and the second source gas nozzle SNZ2.

[0139] Emissions Department ES (Reference) Figure 4 It can be connected to the first source gas supply module SGM1 and the second source gas supply module SGM2, and can be positioned above the first source gas supply module SGM1, the second source gas supply module SGM2, and the purge gas supply module PGM.

[0140] Figure 9B This is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present disclosure. As an example, Figure 9B It shows the relationship with Figure 4 The cross section corresponding to the cross section.

[0141] refer to Figure 9B The Purge Gas Supply Unit (PSP) can supply purge gas to the Purge Gas Supply Module (PGM). The Purge Gas Supply Module (PGM) can be connected to the PSP via a purge gas pipe and can receive purge gas. As an example, the purge gas can be an inert gas and can include one or more of argon (Ar), nitrogen (N2), and helium (He), or a mixture of two or more of argon (Ar), nitrogen (N2), and helium (He).

[0142] The purge gas supply unit (PSP) can be connected to the purge gas nozzle (PNZ) via a purge gas pipe. The PSP supplies purge gas to the purge gas nozzle (PNZ) via the purge gas pipe.

[0143] The purge gas nozzle PNZ can supply purge gas to the substrate SUB through the purge gas injection hole PH. The purge gas allows the first source gas and the second source gas to be injected into the lower part of the first source gas supply module SGM1 and the second source gas supply module SGM2, and allows the first source gas and the second source gas to diffuse to other parts without the air curtain.

[0144] Furthermore, the purge gas can spatially divide the area into which the first source gas and the second source gas are injected. The first source gas and the second source gas can be ejected within a limited deposition area using the purge gas.

[0145] The purging pump EPMP can apply purging pressure to the first purging pipe EPIP1 and the second purging pipe EPIP2. The purging gas can be discharged through the first purging pipe EPIP1 and the second purging pipe EPIP2 via the residual first source gas, the residual second source gas, and the purging pressure.

[0146] Although embodiments of this disclosure have been described, it will be understood that this disclosure is not intended to be limited to these embodiments, but rather that various changes and modifications can be made by those skilled in the art within the spirit and scope of this disclosure as claimed. Therefore, the subject matter disclosed should not be limited to any single embodiment described herein, and the scope of the invention should be determined according to the appended claims.

Claims

1. An atomic layer deposition apparatus comprising: a source gas supply part supplying a plurality of source gases; a source gas supply module connected to the source gas supply part; an exhaust part connected to and disposed above the source gas supply module; and an exhaust plasma supply part connected to and applying an exhaust plasma to the exhaust part, wherein the exhaust part is configured to apply the exhaust plasma received from the exhaust plasma supply part to the source gas supply module, to suck in the exhaust plasma applied to the source gas supply module, and to exhaust the sucked exhaust plasma to the outside. The source gas supply module comprises:

2. The atomic layer deposition apparatus according to claim 1, wherein a first source gas supply module configured to supply a first source gas to a substrate; and a second source gas supply module configured to supply a second source gas to the substrate, wherein the plurality of source gases comprises the first source gas and the second source gas. The first source gas supply module comprises a plurality of first source gas nozzles connected to the source gas supply part, and the second source gas supply module comprises a plurality of second source gas nozzles connected to the source gas supply part.

3. The atomic layer deposition apparatus according to claim 2, wherein The first source gas nozzles and the second source gas nozzles are alternately arranged.

4. The atomic layer deposition apparatus according to claim 3, wherein 5.The atomic layer deposition apparatus of claim 4, further comprising a plurality of partition walls disposed between the first source gas nozzles and the second source gas nozzles. The exhaust part comprises:

6. The atomic layer deposition apparatus according to claim 2, wherein an exhaust pump; a first exhaust pipe connected to the first source gas supply module; and a second exhaust pipe connected to the second source gas supply module. 7.The atomic layer deposition apparatus of claim 6, further comprising an exhaust plasma pipe connected to the first exhaust pipe and the second exhaust pipe, The exhaust plasma supply part applies the exhaust plasma to the exhaust plasma pipe. wherein 8.The atomic layer deposition apparatus of claim 7, further comprising: a first valve configured to connect the first exhaust pipe and the exhaust pump, and to control exhaust of the exhaust plasma sucked from the first source gas supply module to the outside; and a second valve configured to connect the second exhaust pipe and the exhaust pump, and to control exhaust of the exhaust plasma sucked from the second source gas supply module to the outside. 9.The atomic layer deposition apparatus of claim 8, further comprising: a third valve configured to connect the first exhaust pipe and the exhaust plasma pipe, and to control application of the exhaust plasma to the first exhaust pipe; and a fourth valve configured to connect the second exhaust pipe and the exhaust plasma pipe, and to control application of the exhaust plasma to the second exhaust pipe. The first exhaust pipe receives the exhaust plasma from the exhaust plasma supply part and applies the exhaust plasma to the first source gas supply module, and the exhaust plasma applied to the first source gas supply module is exhausted to the second exhaust pipe through the second source gas supply module.

10. The atomic layer deposition apparatus according to claim 9, wherein ​ 11. The atomic layer deposition apparatus of claim 10, wherein, when the third valve is opened, the exhaust plasma is applied from the exhaust plasma supply portion to the first exhaust pipe and the fourth valve is closed, and when the second valve is opened, the exhaust plasma sucked from the second source gas supply module is exhausted to the second exhaust pipe and the first valve is closed.

12. The atomic layer deposition apparatus of claim 9, wherein, The second exhaust pipe receives the exhaust plasma from the exhaust plasma supply portion and applies the exhaust plasma to the second source gas supply module, and the exhaust plasma applied to the second source gas supply module is exhausted to the first exhaust pipe through the first source gas supply module.

13. An atomic layer deposition apparatus according to claim 12, wherein when the fourth valve is opened, the exhaust plasma is applied from the exhaust plasma supply portion to the second exhaust pipe and the third valve is closed, and when the first valve is opened, the exhaust plasma sucked from the first source gas supply module is exhausted to the first exhaust pipe and the second valve is closed.

14. The atomic layer deposition apparatus of claim 9, further comprising: a pipe connected to the first source gas supply module and the second source gas supply module; a pump connected to the pipe; and a fifth valve configured to connect the pipe and the pump and to control the exhaust of the exhaust plasma to the pump.

15. An atomic layer deposition apparatus according to claim 14, wherein The first exhaust pipe receives the exhaust plasma and applies the exhaust plasma to the first source gas supply module, the second exhaust pipe receives the exhaust plasma and applies the exhaust plasma to the second source gas supply module, and the exhaust plasma applied to the first source gas supply module and the second source gas supply module is exhausted through the pipe.

16. An atomic layer deposition apparatus according to claim 15, wherein when the third valve and the fourth valve are opened, the exhaust plasma is applied to the first exhaust pipe and the second exhaust pipe and the first valve and the second valve are closed, and when the fifth valve is opened, the exhaust plasma is exhausted to the pump.

17. An atomic layer deposition apparatus comprising: a source gas supply portion supplying a plurality of source gases including a first source gas and a second source gas; a first source gas supply module connected to the source gas supply portion and supplying the first source gas; a second source gas supply module connected to the source gas supply portion and supplying the second source gas; a purge gas supply module disposed between the first source gas supply module and the second source gas supply module; a purge gas supply portion supplying a purge gas to the purge gas supply module; an exhaust portion connected to the first source gas supply module and the second source gas supply module and disposed above the first source gas supply module and the second source gas supply module and the purge gas supply module; and an exhaust plasma supply portion connected to the exhaust portion and applying an exhaust plasma to the exhaust portion, wherein the exhaust portion is configured to apply the exhaust plasma received from the exhaust plasma supply portion to the first source gas supply module and the second source gas supply module, and The first source gas supply module and the second source gas supply module discharge the discharge plasma applied thereto to the discharge portion.

18. An atomic layer deposition apparatus as defined in claim 17, wherein The purge gas supply module has a slit shape.

19. The atomic layer deposition apparatus of claim 17, wherein, The first source gas supply module includes a first source gas nozzle connected to the source gas supply portion, the second source gas supply module includes a second source gas nozzle connected to the source gas supply portion, and the purge gas supply module includes a purge gas nozzle connected to the purge gas supply portion.

20. The atomic layer deposition apparatus of claim 19, wherein, The first source gas nozzle and the second source gas nozzle and the purge gas nozzle are repeatedly arranged in the order of the first source gas nozzle, the purge gas nozzle, and the second source gas nozzle.

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