Retina-imitated panchromatic nerve synapse device and preparation method thereof
By simulating the functions of cone cells and bipolar cells using a panchromatic neural synapse device that mimics the retinal color, the high power consumption and large size problems of traditional visual imaging systems have been solved, realizing a low-power, high-performance neural retinal sensing system.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-28
- Publication Date
- 2026-03-10
AI Technical Summary
Traditional visual imaging systems suffer from high power consumption, large size, and long latency, and lack information processing capabilities with low redundancy, low power consumption, high dynamics, and robustness.
By employing a retinal panchromatic neural synapse device, and utilizing optoelectronic materials such as perovskite quantum dots and two-dimensional materials to simulate the functions of cone cells and bipolar cells, the R/G/B color response and bipolar light response are realized by regulating the gate voltage, thus constructing a retinal neuromorphic perception system integrating sensing, storage, and computing.
It achieves R/G/B color response without color filters, simulates the function of cone cells and retinal cells, and features flexibility, low power consumption and high performance, making it suitable for building low-cost neural retinal synaptic devices.
Smart Images
Figure CN121646281A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present disclosure relates to the field of semiconductor technology and semiconductor optoelectronic technology, in particular to a neural retina synapse device for artificial vision and a preparation method thereof. BACKGROUND
[0002] With the rapid development of information technology such as Internet of Things, 6G network, artificial intelligence, people's requirements for machine vision imaging system are getting higher and higher. The traditional visual imaging system is composed of sensing unit, computing unit and storage unit. Information needs to be collected by visual sensing unit to optical effective data, and converted into a form that can be processed by computing and storage unit through analog-to-digital converter, and the information is transmitted to the storage and computing unit through the data bus. Therefore, the traditional visual imaging often suffers from high power consumption, large size, long delay and other problems.
[0003] Vitreous, retina and brain visual cortex constitute the human visual system, realize efficient intelligent perception and information processing of visual image, have the advantages of low redundancy, low power consumption, high dynamic and strong robustness, can efficiently and adaptively process dynamic and static information, and have the ability of ubiquitous perception with extremely small samples. Among them, the cone cells in the retina can sense R / G / B narrowband light stimulation and transmit the generated image information to the bipolar cells for preprocessing, and then transmit the information to the brain visual cortex for further processing. Inspired by the biological visual system, a neural retina synapse device integrating light signal perception, storage and processing functions is expected to solve the problems existing in the traditional visual system.
[0004] To prepare a device with the function of human neural retina, it is necessary to simulate the function of cone cells, realize high responsivity of R / G / B light, simulate the function of bipolar cells, i.e. bipolar photocurrent response, and then simulate the functions of horizontal cells, amacrine cells, etc. to complete the preprocessing of image information. Therefore, it is necessary to select appropriate optoelectronic materials, such as perovskite quantum dots, two-dimensional materials, graphene, carbon nanotubes, etc. These optoelectronic materials not only have unique optoelectronic properties, but also have the advantages of bendability and low power consumption, which are used to realize the light perception ability of cone cells. In addition, carbon-based materials such as graphene also have unique bipolar characteristics, and the bipolar photocurrent response can be realized by adjusting the gate voltage of carbon-based materials, which is very suitable for simulating bipolar cells in the retina. SUMMARY
[0005] The present disclosure discloses a kind of full color neural synapse device of imitated retina and its manufacturing method, to solve the problems existing in traditional visual perception system, realize the R / G / B color response of no color filter to simulate the function of R / G / B cone cell, realize the function of bipolar positive and negative light response by regulating gate voltage to simulate the function of retina cell and biological synapse function. The specific technical scheme is as follows:
[0006] The application discloses a retinal-like full-color neural synapse device, comprising:
[0007] A substrate layer, as a support material of the synapse device, can be a hard substrate or a flexible substrate;
[0008] An electrode layer, composed of three independent gate electrodes, one source electrode and one drain electrode, is formed on the substrate layer, and the gate electrode is used for regulating a channel heterojunction energy band. The three independent gate electrodes are divided into a left gate electrode, a middle gate electrode and a right gate electrode from left to right;
[0009] A channel layer, composed of a light absorption layer and a low-dimensional material layer, is laid on the substrate and used for physically connecting the source electrode and the drain electrode to form an electrical path for neural signal transmission and is electrically insulated from the gate electrode. The light absorption layer is divided into a left light absorption layer, a middle light absorption layer and a right light absorption layer from left to right, and the left light absorption layer, the middle light absorption layer and the right light absorption layer are arranged side by side and are not connected to each other and are laid on the low-dimensional material layer to form a heterojunction;
[0010] Further, the light absorption layer is preferentially selected from quantum dot structure materials and one-dimensional structure materials, and the left light absorption layer, the middle light absorption layer and the right light absorption layer are independently responsive to R / G / B light signals by regulating the components of the quantum dot structure materials and the components of the one-dimensional structure materials;
[0011] Further, the low-dimensional material layer is preferentially selected from one-dimensional structure materials and two-dimensional structure materials, and is connected to the source electrode and the drain electrode to form an electrical path for optic nerve network signal transmission and is used for separating and transmitting photo-generated carriers generated by the light absorption layer to the source electrode and the drain electrode;
[0012] A gate dielectric layer, composed of an electrolyte type gate dielectric material, is divided into three independent areas from left to right, namely a left gate dielectric layer, a middle gate dielectric layer and a right gate dielectric layer, and each of the three areas is independent and not connected to each other;
[0013] Further, the left gate dielectric layer is arranged on the left light absorption layer and the left gate electrode, connects the left light absorption layer and the left gate electrode, forms a double electric layer, and is away from the source electrode, the drain electrode, the middle light absorption layer, the middle gate electrode; the middle gate dielectric layer is arranged on the middle light absorption layer and the middle gate electrode, connects the middle light absorption layer and the middle gate electrode, forms a double electric layer, and is away from the source electrode, the drain electrode, the left light absorption layer, the right light absorption layer, the left gate electrode and the right gate electrode; and the right gate dielectric layer is arranged on the right light absorption layer and the right gate electrode, connects the right light absorption layer and the right gate electrode, forms a double electric layer, and is away from the source electrode, the drain electrode, the middle light absorption layer and the middle gate electrode.
[0014] In the retinal full-color neural synapse device, the light absorption layer adopts three different component materials for receiving narrow-band R / G / B optical signals; the low-dimensional material layer and the light absorption layer form a heterojunction for separating and transmitting photo-generated carriers; the low-dimensional material layer and the source electrode and the drain electrode form a neural network signal transmission path to complete neural electrical signal transmission; and the gate dielectric layer is used for regulating the energy band of the heterojunction. The whole is used for completing the collection, front-end processing and storage of full optical signals, thereby simulating the functions of cone cells and bipolar cells in the human eye retina, and thereby constructing a retinal neural morphological perception system integrating sensing and computing.
[0015] Further, in the retinal full-color neural synapse device, the material of the light absorption layer is preferably a perovskite quantum dot material or a carbon quantum dot material with band modification.
[0016] Further, in the retinal full-color neural synapse device, the material of the low-dimensional material layer is preferably a carbon nanotube, graphene or silicene.
[0017] Further, in the retinal full-color neural synapse device, the material of the gate dielectric layer is preferably an ionic glue, chitosan or egg white.
[0018] The application further provides a manufacturing method of the retinal full-color neural synapse device.
[0019] Forming a gate electrode, a source electrode and a drain electrode on a substrate; forming a low-dimensional material layer on the source electrode, the drain electrode and the substrate; preparing a left edge light absorption layer, an intermediate light absorption layer and a right edge light absorption layer on the low-dimensional material layer respectively to ensure that the left edge light absorption layer, the intermediate light absorption layer and the right edge light absorption layer are not overlapped and connected with each other, and are all laid on the low-dimensional material layer; preparing a left edge gate dielectric layer on the left edge light absorption layer and the left edge gate electrode, away from the substrate layer; preparing an intermediate gate dielectric layer on the intermediate light absorption layer and the intermediate gate electrode, away from the substrate layer; and preparing a right edge gate dielectric layer on the right edge light absorption layer and the right edge gate electrode, away from the substrate layer.
[0020] In the manufacturing method of the retinal full-color neural synapse device, the electrode layer is preferably prepared on the substrate by printing technology, magnetron sputtering, or electron beam evaporation technology, or physical vapor deposition and photolithographic patterning technology.
[0021] In the manufacturing method of the retinal full-color neural synapse device, the low-dimensional material layer is preferably prepared on the substrate, the source electrode and the drain electrode by printing technology, spin coating, drying or wet transfer.
[0022] In the manufacturing method of the retinal full-color neural synapse device, the light absorption layer is preferably prepared on the low-dimensional material layer by printing technology, dispensing, spin coating, drying and the like.
[0023] In the manufacturing method of the retinal full-color neural synapse device, the gate dielectric layer is preferably prepared on the gate electrode and the light absorption layer by printing technology, dispensing and drying.
[0024] The present application has the following beneficial effects:
[0025] 1. The light absorption layer composed of different component materials is used to receive narrowband R / G / B optical signals, so as to solve the problem that a color filter needs to be added to achieve the selection of narrowband R / G / B optical signals in the traditional R / G / B narrowband optical signal detection, realize the R / G / B color response without color filter, and thus simulate the function of R / G / B cone cells. By adjusting the gate voltage to adjust the heterojunction energy band, the bipolar positive and negative light response is realized, so as to simulate the function of retinal cells and the function of biological synapses. The low-dimensional material constitutes the network connection path of the photoelectric neural signal, and the function of the neural retinal neural network is realized. The whole device completes the collection, front-end processing and storage of full optical signals, so as to simulate the function of the human eye retina, and can be used to construct a retinal neural morphological perception system integrating sensing, storage and calculation.
[0026] 2. The application adopts electrolyte type gate dielectric, light absorbing material and low-dimensional material itself with flexible characteristics, is prepared into flexible electronic products, has advantages in combination with wearable equipment, and provides a flexible, low-power consumption, low-cost and high-performance development idea for a neural retina synaptic device.
[0027] Of course, implementing any product or method of the present disclosure does not necessarily require achieving all the advantages described above at the same time. The present application is also not limited to the provided embodiments. BRIEF DESCRIPTION OF DRAWINGS
[0028] In order to more clearly illustrate the embodiments of the present application, the drawings required to be used in the embodiments or prior art description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other embodiments can also be obtained by those skilled in the art according to these drawings.
[0029] Figure 1 Structure schematic diagram of the emulated retina panchromatic neural synaptic device for some embodiments of the present disclosure;
[0030] Figure 2 A manufacturing process flow chart of the emulated retina panchromatic neural synaptic device for some embodiments of the present disclosure;
[0031] Figure 3 Another manufacturing process flow chart of the emulated retina panchromatic neural synaptic device for some embodiments of the present disclosure; DETAILED DESCRIPTION
[0032] In order to make the purpose, technical scheme and advantages of the present application more clear, the technical scheme in the embodiments of the present application will be described clearly and completely below in combination with the drawings in the embodiments of the present application. It should be understood that the specific embodiments described here are only used to explain the present application, and are not used to limit the present application. The described embodiments are only some embodiments of the present application, not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.
[0033] In the description of the present application, it should be noted that the orientations or positional relationships indicated by the terms "upper", "lower", "left", "right", "vertical", "horizontal" and the like are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.
[0034] Furthermore, many specific details of the application are described below in order to provide a thorough understanding of the application. However, as will be apparent to those skilled in the art, the application can be practiced without all the specific details given below. Unless specifically noted, the parts of the device can be constructed of materials known to those skilled in the art, or of materials developed in the future that have similar functionality. The application is not limited to the specific details described below.
[0035] Embodiment 1
[0036] The application uses conventional technical methods to prepare a retinal-like full-color neural synapse device, as shown in FIG. 1, the preparation method comprises the following steps: Figure 2
[0037] In step S1, the substrate 100 is cleaned for the preparation of the retinal-like full-color neural synapse device. First, the substrate is cleaned with a small amount of acetone and deionized water, and then dried with nitrogen to remove surface oil stains, dirt, etc.
[0038] In step S2, first, the gate, source, and drain electrode patterns are prepared on the substrate 100 using photolithography technology, then the upper metal layer is prepared by sputtering or evaporation technology, and then the photoresist is peeled off using a peeling technology, leaving the left gate electrode 313-1, the middle gate electrode 313-2, the right gate electrode 313-3, the source electrode 312, and the drain electrode 311 on the surface of the substrate 100. The electrode material can be Pd, Ti, Ta, Au, Ru, etc., or a metal alloy.
[0039] In step S3, the low-dimensional material is transferred and peeled off, first photolithography is performed, then the low-dimensional material is transferred to the surface of the substrate 100, and the low-dimensional material layer 201 is formed by photoresist peeling to ensure that the low-dimensional material layer 201 connects the source electrode 312 and the drain electrode 311. The low-dimensional material can be graphene, carbon nanotubes, MoS2, WS2, etc.
[0040] In step S4, first, a light-absorbing material solution with a concentration of 0.5-15 mg / mL is configured, the light-absorbing material solution is dropped onto a specific region on the surface of the low-dimensional material layer 201 by dispensing, and the three regions of material are respectively designed for R / G / B light absorption, and are independent of each other and are not physically connected with each other, then the solvent is evaporated by hot evaporation of nitrogen, and finally the left light-absorbing layer 202-1 region, the middle light-absorbing layer 202-2 region, and the right light-absorbing layer 202-3 region are formed, and three vertical structure heterojunctions are formed with the low-dimensional material layer 201. The selected light-absorbing material solution can be a full-inorganic perovskite quantum dot solution of various components dispersed in n-hexane, can also be an organic perovskite quantum dot solution, can also be a carbon quantum dot solution dispersed in water, can also be a solution of other quantum dot materials with a shell structure and other one-dimensional structure materials, etc.
[0041] In step S5, an electrolyte solution is configured, and is respectively prepared on the left light-absorbing layer 202-1 and the left gate electrode 313-1, on the middle light-absorbing layer 202-2 and the middle gate electrode 313-2, and on the right light-absorbing layer 202-1 and the right gate electrode 313-1 by drop coating. Then, by low-temperature heating, the left gate dielectric layer 203-1, the middle gate dielectric layer 203-2, and the right gate dielectric layer 203-3 are formed, and the band independent adjustment functions of the three heterojunctions are respectively completed. The electrolyte solution can be an ionic glue solution, a chitosan solution, egg white, etc.
[0042] Embodiment 2
[0043] The present application adopts an aerosol jet 3D printing technology to prepare a full-color retinal nerve synapse device, as shown in FIG. 1, and a preparation method thereof includes the following steps: Figure 3
[0044] In step S1', the substrate 100 is cleaned for preparing the full-color retinal nerve synapse device. First, the substrate is cleaned with a small amount of acetone and deionized water, and then dried with nitrogen to remove surface oil stains and dirt.
[0045] In step S2', first, the left gate electrode 313-1, the middle gate electrode 313-2, the right gate electrode 313-3, the source electrode 312, and the drain electrode 311 are printed on the substrate 100 by aerosol jet 3D printing. The electrode material can be Pd, Ti, Ta, Au, Ru, etc., or can be in the form of an alloy.
[0046] In step S3', first, a low-dimensional material suspension solution is configured, and then the low-dimensional material layer 201 is printed on the substrate layer 100 and between the source and drain electrodes by aerosol jet 3D printing. The selected low-dimensional material can be graphene, carbon nanotubes, MoS2, WS2, etc.
[0047] In step S4', first, a light-absorbing material solution with a concentration of 0.5-15 mg / mL is configured, and then the light-absorbing material solution is 3D-printed by aerosol jetting to a specific region on the surface of the low-dimensional material layer 201, and then a light-absorbing layer film pattern, i.e., a left light-absorbing layer 202-1, a middle light-absorbing layer 202-2, and a right light-absorbing layer 202-3, is obtained by thermal evaporation of the solvent, and the three regions of material are respectively designed for R / G / B light absorption, and 202-1, 202-2, and 202-3 are independent of each other and are not physically connected to each other, and finally form three vertical structure heterojunctions with the low-dimensional material layer 201. The light-absorbing material solution selected can be a full-inorganic perovskite quantum dot solution dispersed in n-hexane, an organic perovskite quantum dot solution, a carbon quantum dot solution dispersed in water, or a solution of other quantum dot materials with a shell structure, etc.
[0048] In step S5', an electrolyte solution is configured, and the electrolyte solution is printed by aerosol jetting 3D printing to the left light-absorbing layer 202-1 and the left gate electrode 313-1, to the middle light-absorbing layer 202-2 and the middle gate electrode 313-2, and to the right light-absorbing layer 202-1 and the right gate electrode 313-1. Then, by low-temperature heating, a left gate dielectric layer 203-1, a middle gate dielectric layer 203-2, and a right gate dielectric layer 203-3 are formed, respectively, to complete the independent band adjustment function of the three heterojunctions. The electrolyte solution can be an ionic glue solution, a chitosan solution, egg white, etc.
[0049] In this embodiment 2, aerosol jetting 3D printing technology is used, and the present application is not limited to aerosol jetting 3D printing, and other 3D printing or other printing technologies can also be used.
[0050] The above description is only a preferred embodiment of the present disclosure, and is not intended to limit the protection scope of the present disclosure. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present disclosure shall be included in the protection scope of the present disclosure.
Claims
1. A retinal-like panchromatic neurosynaptic device, characterized by, Comprise: Substrate layer, constituting the support part of the device; Electrode layer, including left gate electrode, middle gate electrode, right gate electrode and source electrode, drain electrode; The left gate electrode, the middle gate electrode, the right gate electrode are arranged in parallel and independent of each other without connection; The gate electrode and the source electrode, the drain electrode are separated by a distance and are independent of each other without connection; Channel layer, including left light absorption layer, middle light absorption layer, right light absorption layer and low-dimensional material layer; The left light absorption layer, the middle light absorption layer and the right light absorption layer are arranged in parallel and independent of each other without connection, located above the low-dimensional material layer, away from the source electrode, the drain electrode, the gate electrode and the substrate layer; The low-dimensional material layer is laid under the light absorption layer, not only forms a heterojunction with the light absorption layer, but also is used for physically connecting the source electrode and the drain electrode to form an electrical path for neural network signal transmission, and is electrically insulated from the gate electrode; Wherein, the left light absorption layer and the low-dimensional material layer constitute a first vertical structure heterojunction; The middle light absorption layer and the low-dimensional material layer constitute a second vertical structure heterojunction; The right light absorption layer and the low-dimensional material layer constitute a third vertical structure heterojunction; Gate dielectric layer, including left gate dielectric layer, middle gate dielectric layer, right gate dielectric layer; The left gate dielectric layer, the middle gate dielectric layer, the right gate dielectric layer are independent of each other without connection; Wherein, the left gate dielectric layer is placed on the left light absorption layer and the left gate electrode, connecting the left light absorption layer and the left gate electrode, forming a double electric layer, away from the source electrode, the drain electrode, the middle light absorption layer, the middle gate electrode; Wherein, the middle gate dielectric layer is placed on the middle light absorption layer and the middle gate electrode, connecting the middle light absorption layer and the middle gate electrode, forming a double electric layer, away from the source electrode, the drain electrode, the left light absorption layer, the right light absorption layer, the left gate electrode, the right gate electrode; Wherein, the right gate dielectric layer is placed on the right light absorption layer and the right gate electrode, connecting the right light absorption layer and the right gate electrode, forming a double electric layer, away from the source electrode, the drain electrode, the middle light absorption layer, the middle gate electrode.
2. The retinal-like full-color neurosynaptic device of claim 1, wherein, Also includes a substrate layer; The substrate layer is located below the electrode layer and the channel layer, away from the gate dielectric layer.
3. The retinal-simulating panchromatic neurosynaptic device of claim 1, wherein, The left light absorption layer, the middle light absorption layer and the right light absorption layer all include one of quantum dot structure and one-dimensional structure.
4. The retinal-simulation, full-color, neurosynaptic device, as recited in claim 1, characterized in that, The low-dimensional material layer all includes one of one-dimensional structure material and two-dimensional structure material.
5. A method for fabricating a retinal-like full-color neurosynaptic device, comprising: Comprise: Preparation of left gate electrode, middle gate electrode, right gate electrode, source electrode, drain electrode on substrate layer; Preparation of low-dimensional material layer on the source electrode, the drain electrode and the substrate layer; Preparation of left light absorption layer, middle light absorption layer and right light absorption layer on the low-dimensional material layer; Wherein, the left light absorption layer, the middle light absorption layer and the right light absorption layer are arranged in parallel and independent of each other without connection; A left gate dielectric layer is prepared on the left light absorption layer and the left gate electrode, away from the substrate layer; A middle gate dielectric layer is prepared on the middle light absorption layer and the middle gate electrode, away from the substrate layer; A right gate dielectric layer is prepared on the right light absorption layer and the right gate electrode, away from the substrate layer.
6. The method of manufacturing according to claim 5, wherein, Further comprising: The electrode layer is prepared by preferentially adopting printing technology, magnetron sputtering, or electron beam evaporation technology, or physical vapor deposition and photolithographic patterning technology to form the electrode on the substrate; The light absorption layer is prepared by preferentially adopting printing technology, dispensing, spin coating, and drying to form the light absorption layer; The low-dimensional material layer is prepared by preferentially adopting printing technology, wet transfer, auxiliary material transfer, etc. to form the low-dimensional material layer; The gate dielectric layer is prepared by preferentially adopting printing technology, dispensing, and drying to form the gate dielectric layer.