LED manufacturing method, LED manufacturing equipment and display panel
By first forming a first sacrificial layer and a second sacrificial layer on the growth substrate and then using the height difference to disconnect the epitaxial layer, the problem of low LED luminous efficiency caused by high-energy dry etching is solved, achieving higher luminous efficiency and sidewall protection.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-28
- Publication Date
- 2026-03-13
Smart Images
Figure CN121665780A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of LED manufacturing technology, and more particularly to an LED manufacturing method, LED manufacturing equipment, and display panel. Background Technology
[0002] With the development of optoelectronic display technology and semiconductor manufacturing technology, small-sized Mini / Micro LED displays are receiving increasing attention due to their advantages such as long lifespan, high PPI, and short response time.
[0003] Currently, LEDs fabricated using high-energy dry etching methods have relatively low luminous efficiency. Summary of the Invention
[0004] The purpose of this application is to provide a method for manufacturing LEDs, equipment for manufacturing LEDs, and a display panel that improves the luminous efficiency of LEDs.
[0005] This application discloses a method for manufacturing an LED, the method comprising the following steps: A growth substrate and a transient substrate are provided, the transient substrate comprising a transient substrate and a first adhesive layer; A first sacrificial layer is formed on the growth substrate; a second sacrificial layer is formed on the growth substrate in a region other than the first sacrificial layer; Remove the first sacrificial layer; A decomposable layer and an epitaxial layer are formed on the growth substrate and on the second sacrificial layer; A first electrode is formed on the epitaxial layer, and the second sacrificial layer is removed; The epitaxial layer and the first electrode on the growth substrate are separated from the growth substrate together using the side of the transient substrate on which the first adhesive layer is provided; A second electrode is formed on the side of the epitaxial layer opposite to the first electrode to form an LED.
[0006] Optionally, the step of forming a first sacrificial layer on the growth substrate and forming a second sacrificial layer in the region other than the first sacrificial layer on the growth substrate includes: A laser decomposition layer is formed on the growth substrate; A first sacrificial layer is formed on the laser decomposition layer; a second sacrificial layer is formed on the laser decomposition layer in a region other than the first sacrificial layer, wherein the first sacrificial layer is located in a first region and the second sacrificial layer is located in a second region; The steps of forming a first electrode on the epitaxial layer and removing the second sacrificial layer include: A first electrode is formed on the epitaxial layer; A light-shielding layer is formed on the side of the growth substrate opposite to the epitaxial layer, and the orthogonal projection of the light-shielding layer on the growth substrate covers the first region. The epitaxial layer, the first electrode, and the second sacrificial layer on the growth substrate are separated from the growth substrate together using the side of the transient substrate on which the first adhesive layer is disposed.
[0007] Optionally, the step of forming the first electrode on the epitaxial layer includes: A first electrode metal layer is formed on the epitaxial layer; A photoresist layer is formed on the first electrode metal layer; Photolithography is performed simultaneously on the top and bottom of the photoresist layer in the first region, and only on the top or bottom of the photoresist layer in the second region, to form a first electrode on the epitaxial layer.
[0008] Optionally, the step of separating the epitaxial layer and the first electrode together from the growth substrate on the side of the transient substrate where the first adhesive layer is disposed includes: Remove the light-shielding layer; The laser decomposition layer is irradiated with a laser, and the epitaxial layer and the first electrode on the growth substrate are separated from the growth substrate together using the side of the transient substrate where the first adhesive layer is disposed.
[0009] Optionally, the first sacrificial layer is formed on the laser decomposition layer; a second sacrificial layer is formed on the laser decomposition layer in a region other than the first sacrificial layer, wherein the first sacrificial layer is located in a first region and the second sacrificial layer is located in a second region, and the steps prior to these steps include: A partition column is formed on the laser decomposition layer. The partition column is located at the intersection of four first and second regions arranged in a grid pattern. The height of the partition column is greater than the thickness of the second sacrificial layer.
[0010] Optionally, the step of forming the decomposable layer and the epitaxial layer on the growth substrate and on the second sacrificial layer further includes: A crystalline alumina layer is formed on the second sacrificial layer; A decomposable layer and an epitaxial layer are formed on the growth substrate and on the crystalline alumina layer of the second sacrificial layer.
[0011] This application also discloses an LED manufacturing apparatus, which includes: A first apparatus includes a growth substrate, a first sacrificial layer forming apparatus, a second sacrificial layer forming apparatus, an epitaxial layer forming apparatus, a first electrode forming apparatus, a first sacrificial layer removal apparatus, and a second sacrificial layer removal apparatus. The first sacrificial layer forming apparatus is used to form a first sacrificial layer on the growth substrate; the second sacrificial layer forming apparatus is used to form a second sacrificial layer on the growth substrate; the epitaxial layer forming apparatus is used to form an epitaxial layer and a decomposable layer on the growth substrate; the first electrode forming apparatus is used to form a first electrode on the epitaxial layer; the first sacrificial layer removal apparatus is used to remove the first sacrificial layer; and the second sacrificial layer removal apparatus is used to remove the second sacrificial layer. The second machine tool includes a transient substrate and a second electrode generation device. The transient substrate includes a transient substrate and a first adhesive layer. The first adhesive layer is disposed on the transient substrate and is used to separate the epitaxial layer and the first electrode from the growth substrate together. The second electrode generation device is used to form a second electrode on the side of the epitaxial layer opposite to the first electrode to form an LED.
[0012] Optionally, the growth substrate is further provided with a laser decomposition layer and a light-shielding layer, the first sacrificial layer is located in a first region, and the second sacrificial layer is located in a second region; the orthographic projection of the light-shielding layer on the growth substrate covers the first region; the second sacrificial layer removal device is the transient substrate.
[0013] Optionally, the first sacrificial layer is located in the first region, and the second sacrificial layer is located in the second region, with the first region and the second region arranged in a matrix. The growth substrate is also provided with partition pillars, which are located at the intersection of the four first regions and the second region arranged in a grid pattern, and the height of the partition pillars is greater than the thickness of the second sacrificial layer.
[0014] Optionally, the transient substrate further includes a plurality of shims, the shims being disposed on the transient substrate, the first adhesive layer being disposed on the shims, and an accommodating space being formed between two adjacent shims, the width of the accommodating space being greater than the width of the partition column.
[0015] Compared to existing methods that use high-energy dry etching to etch epitaxial layers, this application first forms a first sacrificial layer on the growth substrate, then forms a second sacrificial layer, and then removes the first sacrificial layer, creating a height difference between the surfaces of the growth substrate and the second sacrificial layer. When forming the epitaxial layer, the epitaxial layer on the growth substrate and the epitaxial layer on the second sacrificial layer can be separated. By controlling the shape of the first sacrificial layer to be the same as the desired shape of the epitaxial layer, the desired epitaxial layer can be obtained without high-energy dry etching, avoiding damage to the sidewalls of the epitaxial layer and thus improving the luminous efficiency of the LED. Attached Figure Description
[0016] The accompanying drawings, which form part of the specification, are used to provide a further understanding of the embodiments of this application and illustrate the implementation methods of this application, together with the textual description, to explain the principles of this application. Obviously, the drawings described below are merely some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without any creative effort. In the drawings: Figure 1 This is a schematic flowchart of a method for manufacturing an LED according to the first embodiment of this application; Figures 2a-2b This is a process diagram illustrating the manufacturing method of the first LED according to the first embodiment of this application; Figure 3 This is a schematic flowchart illustrating a method for manufacturing an LED according to a second embodiment of this application; Figures 4a-4c This is a process diagram illustrating the manufacturing method of the first LED according to the second embodiment of this application; Figure 5 This is a schematic flowchart illustrating a method for fabricating a first electrode according to a second embodiment of this application. Figure 6 This is a top view schematic diagram of a growth substrate according to the second embodiment of this application; Figures 7a-7d This is a schematic diagram of a process for forming a partition column according to a second embodiment of this application; Figure 8 This is a schematic diagram of an LED manufacturing apparatus according to an embodiment of this application; Figure 9 This is a schematic diagram of a transient substrate according to an embodiment of this application; Figure 10 This is a schematic diagram of an LED display panel according to an embodiment of this application; Figure 11 This is a schematic diagram of an LED according to an embodiment of this application.
[0017] Among them, 10 is LED manufacturing equipment; 20 is an LED display panel; 30 is a driving backplate; 31 is a driving substrate; 32 is an active switching layer; 33 is a common electrode layer; 100 is a first machine tool; 110 is a growth substrate; 111 is a laser decomposition layer; 112 is a light-shielding layer; 113 is a partition column; 114 is a receiving tank; 120 is a first sacrificial layer forming apparatus; 130 is a second sacrificial layer forming apparatus; 140 is an epitaxial layer forming apparatus; 150 is a first electrode forming apparatus; 160 is a first sacrificial layer removal apparatus; and 170 is a second sacrificial layer removal apparatus. 180. Alumina layer forming apparatus; 200. Second machine tool; 210. Transient substrate; 211. Transient substrate; 212. First adhesive layer; 213. Raising block; 220. Second electrode forming apparatus; 300. LED; 310. Epitaxial layer; 320. First electrode; 330. Second electrode; 340. Decomposable layer; 410. Photoresist layer; 420. First electrode metal layer; 510. First sacrificial layer; 520. Second sacrificial layer; 610. First region; 620. Second region; 610. Laser emitting device. Detailed Implementation
[0018] It should be understood that the terminology, specific structural and functional details used herein are merely for describing particular embodiments and are representative. However, this application may be implemented in many alternative forms and should not be construed as being limited to the embodiments set forth herein.
[0019] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating relative importance or implying the number of technical features indicated. Therefore, unless otherwise stated, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature; "multiple" means two or more. The term "comprising" and any variations thereof mean non-exclusive inclusion, where one or more other features, integers, steps, operations, units, components, and / or combinations thereof may be present or added.
[0020] In addition, terms such as “center,” “horizontal,” “up,” “down,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inner,” and “outer” that indicate orientation or positional relationship are based on the orientation or relative positional relationship shown in the accompanying drawings. They are only for the purpose of simplifying the description of this application and do not indicate that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.
[0021] Furthermore, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium, or internal connections between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0022] The present application will now be described in detail with reference to the accompanying drawings and optional embodiments.
[0023] Example 1: Figure 1 This is a schematic flowchart illustrating a method for manufacturing an LED according to the first embodiment of this application. Figures 2a-2b This is a process diagram illustrating the first method for manufacturing an LED according to the first embodiment of this application, as shown below. Figures 1-2b As shown, this application discloses a method for manufacturing an LED, the method comprising the following steps: S1: Provide a growth substrate and a transient substrate, wherein the transient substrate includes a transient substrate and a first adhesive layer; For example, the material of the first adhesive layer 212 may be an acrylic resin (PMMA) or a polyimide resin (PI). For example, the material of the growth substrate 110 includes crystalline alumina.
[0024] S2: A first sacrificial layer is formed on the growth substrate; a second sacrificial layer is formed on the growth substrate in a region other than the first sacrificial layer; In order to facilitate the separate removal of the first sacrificial layer 510, the materials of the first sacrificial layer 510 and the second sacrificial layer 520 respectively include metal and photoresist. For example, the material of the first sacrificial layer 510 includes metal, and the material of the second sacrificial layer 520 includes photoresist.
[0025] In this way, the step of forming the first sacrificial layer 510 on the growth substrate 110 can be achieved by forming a whole metal layer on the growth substrate 110, and then the whole metal layer can be patterned by photolithography to form the first sacrificial layer 510. Then, photoresist is coated to form a second sacrificial layer 520 in the area other than the first sacrificial layer 510 on the growth substrate 110.
[0026] The first sacrificial layer 510 is located in the first region 610, and the second sacrificial layer 520 is located in the second region 620. In order to facilitate the disconnection of the epitaxial layer 310 between the first region 610 and the second region 620, the cross-sectional shape of the first sacrificial layer 510 can also be set to be trapezoidal, so that the cross-sectional shape of the second sacrificial layer 520 is an inverted trapezoid.
[0027] S3: Remove the first sacrificial layer; For example, the first sacrificial layer 510 can be removed by using a metal etching solution, such as phosphoric acid or hydrochloric acid.
[0028] S4: A decomposable layer and an epitaxial layer are formed on the growth substrate and on the second sacrificial layer; The decomposable layer 340 can be U-GaN, which is undoped GaN, also known as intrinsic GaN. The epitaxial layer 310 includes N-GaN, which is N-type GaN, MQW (multiple quantum well layer), and P-GaN, which is P-type GaN, arranged sequentially. By irradiating U-GaN with a laser, U-GaN can be decomposed, thereby causing the N-GaN, MQW, and P-GaN, i.e., the epitaxial layer 310 and the growth substrate 110, to separate.
[0029] S5: Form a first electrode on the epitaxial layer and remove the second sacrificial layer; For example, the second sacrificial layer 520 can be removed before the first electrode 320 layer is formed. Alternatively, the first electrode 320 layer can be formed first, and then the second sacrificial layer 520 can be removed.
[0030] In this application, the example of first forming the first electrode 320 layer and then removing the second sacrificial layer 520 is used for explanation.
[0031] To form the first electrode 320, a full-surface metal layer needs to be prepared first, then photoresist is applied, the photoresist is patterned, then the uncured photoresist is removed, then the metal layer not covered by the photoresist is removed, then the cured photoresist is removed, and then the first electrode 320 is formed.
[0032] Since the material of the second sacrificial layer 520 is also a photoresist material, the second sacrificial layer 520 can be removed at the same time as the cured photoresist, thus saving the step of removing the second sacrificial layer 520 separately and improving production efficiency.
[0033] S6: Separate the epitaxial layer and the first electrode from the growth substrate together using the side of the transient substrate on which the first adhesive layer is provided; For example, the first electrode 320 is first abutted on the side of the transient substrate 210 where the first adhesive layer 212 is provided, so that the first adhesive layer 212 adheres to the first electrode 320. Then, the decomposable layer 340 is irradiated by a laser, so that the decomposable layer 340 is decomposed, thereby causing the epitaxial layer 310 and the first electrode 320 to detach from the growth substrate 110 together.
[0034] S7: A second electrode is formed on the side of the epitaxial layer opposite to the first electrode to form an LED.
[0035] The steps for forming the second electrode 330 are the same as those for forming the first electrode 320, and therefore will not be described in detail here. It should be noted that laser irradiation is required to decompose the entire intrinsic GaN and expose N-GaN, so that the second electrode 330 can contact the N-GaN.
[0036] As LED300 is miniaturized, its front area becomes smaller, making sidewall luminescence indispensable. The intensity of sidewall luminescence directly affects the luminous efficiency of small-sized LED300. Existing high-energy dry etching methods etch the epitaxial layer 310 of LED300, dividing the entire epitaxial layer 310 into LED300s of the required size and shape. This process damages the sidewalls of these LED300s, reducing their luminous efficiency and thus affecting the overall luminous efficiency of the LED300.
[0037] Compared to existing methods that use high-energy dry etching to etch epitaxial layers, this application first forms a first sacrificial layer 510 on the growth substrate 110, then forms a second sacrificial layer 520, and then removes the first sacrificial layer 510, creating a height difference between the surfaces of the growth substrate 110 and the second sacrificial layer 520. When forming the epitaxial layer 310, the epitaxial layer 310 on the growth substrate 110 and the epitaxial layer 310 on the second sacrificial layer 520 can be separated. By controlling the shape of the first sacrificial layer 510 to be the same as the desired shape of the epitaxial layer 310, the desired epitaxial layer 310 can be obtained without high-energy dry etching, avoiding damage to the sidewalls of the epitaxial layer 310, thereby improving the luminous efficiency of the LED 300.
[0038] Example 2: In order to further improve the fabrication efficiency of LED300, this application can further fabricate the epitaxial layer 310 on the second sacrificial layer 520 into LED300 and transfer it onto the transient substrate 210.
[0039] Figure 3 This is a schematic flowchart illustrating a method for manufacturing an LED according to a second embodiment of this application. Figures 4a-4cThis is a process diagram illustrating the manufacturing method of the first LED according to the second embodiment of this application, as shown below. Figures 3-4c As shown, the difference is: S2: The step of forming a first sacrificial layer on the growth substrate and forming a second sacrificial layer on the growth substrate in a region other than the first sacrificial layer includes: S21: A laser decomposition layer is formed on the growth substrate; For example, the material of the laser decomposition layer 111 includes GaN, such that the laser decomposition layer 111 can be decomposed under laser irradiation.
[0040] Furthermore, the first sacrificial layer 510 is located in the first region 610, and the second sacrificial layer 520 is located in the second region 620. The laser decomposition layer 111 can also be patterned to form a gap between the laser decomposition layer 111 on the first region 610 and the laser decomposition layer 111 on the second region 620. In this way, when separating the epitaxial layer 310 of the second region 620, the epitaxial layer 310 of the first region 610 will not be pulled, thereby ensuring the shape of the epitaxial layer 310 of the first region 610.
[0041] S22: A first sacrificial layer is formed on the laser decomposition layer; a second sacrificial layer is formed on the laser decomposition layer in a region other than the first sacrificial layer, wherein the first sacrificial layer is located in a first region and the second sacrificial layer is located in a second region; In step S22, the material of the second sacrificial layer 520 must be a light-transmitting material that can withstand high temperatures, such as SiNx or SiOx, so as to avoid removing the second sacrificial layer 520 when forming the first electrode 320.
[0042] The corresponding step S4: forming a decomposable layer and an epitaxial layer on the growth substrate and on the second sacrificial layer.
[0043] Specifically, it comprises a decomposition layer 140 and an epitaxial layer 310 formed on the laser decomposition layer 111 of the growth substrate 110. In step S5: the step of forming a first electrode on the epitaxial layer and removing the second sacrificial layer includes: S51: A first electrode is formed on the epitaxial layer; Specifically, a first electrode 320 is formed on the epitaxial layer 310 of the first region 610, and a first electrode 320 is also formed on the epitaxial layer 310 of the second region 620.
[0044] S52: A light-shielding layer is formed on the side of the growth substrate opposite to the epitaxial layer, and the orthogonal projection of the light-shielding layer on the growth substrate covers the first region. After the first electrode 320 is formed on the epitaxial layer 310, since the laser decomposition layer 111 needs to be irradiated by a laser, a light-shielding layer 112 needs to be formed on the side of the growth substrate 110 opposite to the epitaxial layer 310, and the orthogonal projection of the light-shielding layer 112 on the growth substrate 110 covers the first region 610.
[0045] S53: Separate the epitaxial layer, the first electrode, and the second sacrificial layer from the growth substrate using the side of the transient substrate on which the first adhesive layer is provided.
[0046] At this point, the epitaxial layer 310 corresponding to the second region 620 and the first electrode 320 are separated.
[0047] S54: Remove the second sacrificial layer; The second sacrificial layer 520 can be removed by irradiating the decomposable layer 340 with a laser, causing the decomposable layer 340 to decompose and the second sacrificial layer 520 to detach.
[0048] S55: A second electrode is formed on the side of the epitaxial layer opposite to the first electrode after the second sacrificial layer has been removed, to form an LED.
[0049] It is understandable that after separating the epitaxial layer 310, the first electrode 320, and the second sacrificial layer 520 of the second region 620 from the growth substrate 110 using the transient substrate 210, another transient substrate 210 can be used to transfer the remaining epitaxial layer 310 and the first electrode 320 layer on the first region 610. Of course, the same transient substrate 210 can also be used. When using the same transient substrate 210, the first adhesive layer 212 needs to be unbonded so that the LED 300 on the transient substrate 210 can be transferred to another transfer substrate first; and then the same transient substrate 210 can be used to transfer the epitaxial layer 310 and the first electrode 320 of the growth substrate 110.
[0050] In simple terms, the epitaxial layer 310 on the second sacrificial layer 520 is also transferred to form an LED 300, thereby improving the production efficiency of the LED 300.
[0051] Figure 5 This is a schematic flowchart illustrating a method for fabricating a first electrode according to a second embodiment of this application, in conjunction with... Figure 5 As shown, step S51, forming the first electrode 320 on the epitaxial layer 310, includes: S511: A first electrode metal layer is formed on the epitaxial layer; S512: A photoresist layer is formed on the first electrode metal layer; S513: Photolithography is performed simultaneously on the top and bottom of the photoresist layer in the first region, and photolithography is performed only on the top or bottom of the photoresist layer in the second region; to form a first electrode on the epitaxial layer.
[0052] The photolithography process here includes curing the photoresist layer 410 by irradiating it with light, removing the un-irradiated photoresist layer 410 using a photoresist stripper, removing the first electrode metal layer 420 not covered by the photoresist layer 410 using a metal etchant, and finally removing the cured photoresist layer 410. Photolithography is performed simultaneously on the top and bottom of the photoresist layer 410 within the first region 610, meaning both the top and bottom of the photoresist layer 410 within the first region 610 are simultaneously photocured; photolithography is performed only on the top or bottom of the photoresist layer 410 within the second region 620, meaning only one of the top or bottom of the photoresist layer 410 within the second region 620 is photocured.
[0053] In simple terms, because there is a height difference between the epitaxial layer 310 in the first region 610 and the epitaxial layer 310 in the second region 620, the thickness of the photoresist layer 410 in the first region 610 is greater than the thickness of the photoresist layer 410 in the second region 620 when the first electrode 320 is fabricated. In order to simultaneously form the first electrode 320 on the epitaxial layer 310 in the first region 610 and the epitaxial layer 310 in the second region 620, the first electrode 320 needs to be formed on both regions simultaneously.
[0054] Therefore, photocuring is performed simultaneously on the top and bottom of the photoresist layer 410 in the first region 610, while only one of the top or bottom of the photoresist layer 410 in the second region 620 is photocured. This avoids incomplete curing of the photoresist layer 410 in the first region 610, which would cause the first electrode metal layer 420 at the location where the first electrode 320 is to be formed on the epitaxial layer 310 of the first region 610 to be removed, thereby ensuring the production yield.
[0055] S6: The step of separating the epitaxial layer and the first electrode together from the growth substrate using the side of the transient substrate where the first adhesive layer is provided includes: S61: Remove the light-shielding layer; For example, the material of the light-shielding layer 112 includes a photoresist material with added carbon black. The photoresist material can be removed by means of N-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO), or a special stripping solution. Alternatively, it can be removed by bombarding the photoresist material with active particles such as oxygen or fluorine-based gases, causing it to decompose into volatile gases.
[0056] S62: The laser decomposition layer is irradiated with a laser, and the epitaxial layer and the first electrode on the growth substrate are separated from the growth substrate together using the side of the transient substrate where the first adhesive layer is provided.
[0057] After the light-shielding layer 112 is removed, laser irradiation can be used to separate the epitaxial layer 310 and the first electrode 320 from the growth substrate 110 on the side of the transient substrate 210 where the first adhesive layer 212 is located.
[0058] Step S4: The step of forming a decomposable layer and an epitaxial layer on the growth substrate and on the second sacrificial layer further includes: S41: A crystalline alumina layer is formed on the second sacrificial layer.
[0059] S42: A decomposable layer and an epitaxial layer are formed on the growth substrate and on the crystalline alumina layer of the second sacrificial layer; The thickness of the crystalline alumina layer can be 0.1um-100um. The alumina can be crystallized by high temperature to form a crystalline alumina layer, which is equivalent to forming a substrate layer for the epitaxial layer 310 of the second region 620. The epitaxial layer 310 of the second region 620 is deposited on the crystalline alumina layer. The bottom of the epitaxial layer 310 and the crystalline alumina layer have good lattice matching and fewer mismatches.
[0060] Figure 6 This is a top view schematic diagram of a growth substrate according to the second embodiment of this application. Figures 7a-7d This is a schematic diagram of a process for forming a partition column according to a second embodiment of this application, combined with... Figure 6 and Figure 7d As shown, in order to further improve the fabrication efficiency of LED 300, the first region 610 and the second region 620 are arranged in a matrix staggered manner, that is, the top, bottom, left and right sides of the first region 610 are the second region 620, and the top, bottom, left and right sides of the second region 620 are the first region 610. In this way, a large number of epitaxial layers 310 can be fabricated on a growth substrate 110, thereby improving the fabrication efficiency of LED 300 and reducing the waste of epitaxial layers 310.
[0061] However, this would cause the epitaxial layers 310 of the first diagonally adjacent region 610 to stick together at the corner, and the epitaxial layers 310 of the second diagonally adjacent region 620 to stick together at the corner. Therefore, this application also provides a partition column 113 at this location, with the difference being: S22: Before the step of forming the first sacrificial layer on the laser decomposition layer; forming a second sacrificial layer on the laser decomposition layer in a region other than the first sacrificial layer, wherein the first sacrificial layer is located in the first region and the second sacrificial layer is located in the second region: S221: A partition column is formed on the laser decomposition layer. The partition column is located at the intersection of four first and second regions arranged in a grid pattern. The height of the partition column is greater than the thickness of the second sacrificial layer. In other words, a partition column 113 is provided between the extension layers 310 of the first region 610 that are diagonally adjacent, and a partition column 113 is provided between the extension layers 310 of the second region 620 that are diagonally adjacent.
[0062] The width of the partition post 113 gradually decreases along the direction of the first sacrificial layer 510 toward the growth substrate 110. This can avoid excessive contact between the sidewalls of the epitaxial layer 310 on the first region 610 and the second region 620 and the partition post 113, thereby improving the reliability of separating the epitaxial layer 310.
[0063] By setting the partition post 113, when the epitaxial layer 310 is formed, the epitaxial layer 310 of the first region 610 that is obliquely adjacent to it will be broken at the position of the partition post 113, and the epitaxial layer 310 of the second region 620 that is obliquely adjacent to it will be broken at the position of the partition post 113. In this way, after separating the epitaxial layer 310 of the second region 620, the epitaxial layer 310 of the entire second region 620 will not stick together, and after separating the epitaxial layer 310 of the first region 610, the epitaxial layer 310 of the entire first region 610 will not stick together.
[0064] Furthermore, the partition column 113 has a receiving groove 114 on the side away from the growth substrate 110. The receiving groove 114 is used to receive the epitaxial layer 310 at the connection between the decomposable layer 340 and the epitaxial layer 310 of two obliquely adjacent first regions 610, and to receive the decomposable layer 340 and the epitaxial layer 310 at the connection between the epitaxial layer 310 of two obliquely adjacent second regions 620.
[0065] Correspondingly, since the partition post 113 is provided, S1: a growth substrate and a transient substrate are provided. The transient substrate includes a transient substrate and a first adhesive layer. The transient substrate 210 also includes a plurality of shims 213. The shims 213 are disposed on the transient substrate 211, and the first adhesive layer 212 is disposed on the shims 213. An accommodating space is formed between two adjacent shims 213. The width of the accommodating space is greater than the width of the partition post 113.
[0066] The receiving groove 114 is provided so that when the decomposable layer 340 and the epitaxial layer 310 are prepared, the decomposable layer 340 and the epitaxial layer 310 corresponding to the position of the partition column 113 can enter the receiving groove 114, thereby preventing the top of the partition column 113 from becoming larger and taller, thus preventing the partition column 113 from getting stuck in the receiving space, thereby improving the reliability of the transfer.
[0067] This application also discloses an LED manufacturing apparatus 10, which can be used in the LED manufacturing method described above. Regarding the LED manufacturing apparatus 10, this application provides the following design: Figure 8 This is a schematic diagram of an LED manufacturing apparatus according to an embodiment of this application. Figure 9 This is a schematic diagram of a transient substrate according to an embodiment of this application, as shown below. Figure 8 and Figure 9 As shown, this application discloses an LED manufacturing apparatus 10, which includes: a first machine base 100, the first machine base 100 including a growth substrate 110, a first sacrificial layer forming apparatus 120, a second sacrificial layer forming apparatus 130, an epitaxial layer forming apparatus 140, a first electrode forming apparatus 150, a first sacrificial layer removal apparatus 160, and a second sacrificial layer removal apparatus 170.
[0068] The first sacrificial layer forming apparatus 120 is used to form a first sacrificial layer 510 on the growth substrate 110; the second sacrificial layer forming apparatus 130 is used to form a second sacrificial layer 520 on the growth substrate 110; the epitaxial layer forming apparatus 140 is used to form an epitaxial layer 310 and a decomposable layer 340 on the growth substrate 110; the first electrode forming apparatus 150 is used to form a first electrode 320 on the epitaxial layer 310; the first sacrificial layer removal apparatus 160 is used to remove the first sacrificial layer 510; and the second sacrificial layer removal apparatus 170 is used to remove the second sacrificial layer 520.
[0069] The second machine tool 200 includes a transient substrate 210 and a second electrode generation device 220.
[0070] The transient substrate 210 includes a transient substrate 211 and a first adhesive layer 212. The first adhesive layer 212 is disposed on the transient substrate 211 and is used to separate the epitaxial layer 310 and the first electrode 320 from the growth substrate 110 together. The second electrode forming device 220 is used to form a second electrode 330 on the side of the epitaxial layer 310 opposite to the first electrode 320 to form an LED 300.
[0071] Of course, the LED manufacturing equipment 10 also includes a laser emitting device 610 and a crystalline alumina layer generating device 180. The laser emitting device 610 is used to emit lasers to decompose the decomposable layer 340 and the laser decomposable layer 111; the crystalline alumina layer generating device 180 is used to generate a crystalline alumina layer.
[0072] This application first forms a first sacrificial layer 510 on the growth substrate 110, then forms a second sacrificial layer 520, and then removes the first sacrificial layer 510, so that a height difference is formed between the surfaces of the growth substrate 110 and the second sacrificial layer 520. Then, when forming the epitaxial layer 310, the epitaxial layer 310 on the growth substrate 110 and the epitaxial layer 310 on the second sacrificial layer 520 can be separated. In this way, by controlling the shape of the first sacrificial layer 510 to be the same as the shape of the desired epitaxial layer 310, the desired epitaxial layer 310 can be obtained without high-energy dry etching, avoiding damage to the sidewalls of the epitaxial layer 310, thereby improving the luminous efficiency of the LED 300.
[0073] Furthermore, when the epitaxial layer 310 on the second region 620 is required, a laser decomposition layer 111 and a light-shielding layer 112 are respectively provided on the growth substrate 110. The first sacrificial layer 510 is located in the first region 610, and the second sacrificial layer 520 is located in the second region 620. The orthographic projection of the light-shielding layer 112 on the growth substrate 110 covers the first region 610. The second sacrificial layer removal device 170 is the transient substrate 210.
[0074] The light-shielding layer 112 is provided so that the epitaxial layer 310 of the first region 610 will not be affected when the epitaxial layer 310 of the second region 620 is peeled off, thereby preventing the epitaxial layer 310 of the first region 610 from shifting.
[0075] Furthermore, the first sacrificial layer 510 is located in the first region 610, and the second sacrificial layer 520 is located in the second region 620. The first region 610 and the second region 620 are arranged in a matrix-like staggered pattern, which can improve the utilization rate of the epitaxial layer 310.
[0076] Then, partition pillars 113 are also provided on the growth substrate 110. The partition pillars 113 are located at the intersection of the four first regions 610 and the second regions 620 arranged in a grid pattern. The height of the partition pillars 113 is greater than the thickness of the second sacrificial layer 520.
[0077] This ensures that when the epitaxial layer 310 is formed, the epitaxial layer 310 of the first region 610, which is obliquely adjacent to it, will break at the position of the partition post 113, and the epitaxial layer 310 of the second region 620, which is obliquely adjacent to it, will break at the position of the partition post 113. In this way, after separating the epitaxial layer 310 of the second region 620, the epitaxial layer 310 of the entire second region 620 will not stick together, and after separating the epitaxial layer 310 of the first region 610, the epitaxial layer 310 of the entire first region 610 will not stick together.
[0078] Since the height of the partition post 113 is greater than the thickness of the second sacrificial layer 520, a shim block 213 is also provided at the bottom of the first adhesive layer 212. Specifically, the transient substrate 210 also includes a plurality of shim blocks 213. The shim blocks 213 are disposed on the transient substrate 211, and the first adhesive layer 212 is disposed on the shim blocks 213. An accommodating space is formed between two adjacent shim blocks 213, and the width of the accommodating space is greater than the width of the partition post 113.
[0079] In this way, when the transient substrate 210 and the growth substrate 110 are aligned, the partition post 113 extends into the receiving space between the pad blocks 213, thereby avoiding the situation where the first adhesive layer 212 cannot properly abut and bond with the first electrode 320, and the first electrode 320 and the epitaxial layer 310 are not properly bonded.
[0080] Furthermore, a receiving groove 114 is provided on the side of the partition post 113 away from the growth substrate 110. The receiving groove 114 is used to accommodate the epitaxial layer 310 at the connection between two obliquely adjacent first regions 610 and the epitaxial layer 310 at the connection between two obliquely adjacent second regions 620. In this way, the epitaxial layer 310 will not be directly formed on the top of the partition post 113, causing the partition post 113 to become taller and the top of the partition post 113 to become larger, thus avoiding the partition post 113 from getting stuck in the receiving space, thereby improving the reliability of transfer.
[0081] Figure 10 This is a schematic diagram of an LED display panel according to an embodiment of this application. Figure 11 This is a schematic diagram of an LED according to an embodiment of this application, as shown below. Figures 10-11 As shown, this application also discloses an LED display panel 20, which includes a driving backplate 30 and an LED 300 manufactured by an LED manufacturing method. The LED 300 is connected to the driving backplate 30, and the driving backplate 30 is used to drive the LED 300 to emit light.
[0082] The driving backplate 30 includes a driving substrate 31, an active switching layer 32, and a common electrode layer 33. The active switching layer 32 is disposed on the driving substrate 31, and the LEDs 300 are disposed on the active switching layer 32. Each LED 300 is connected to an active switch within the active switching layer 32. The common electrode layer 33 is connected to the side of the LED 300 opposite to the active switching layer 32. The epitaxial layer 310 of the LED 300 fabricated using the above method has a flat side surface and higher luminous efficiency.
[0083] A notch 34 is formed at at least one corner of the epitaxial layer 310 of the LED 300. The notch 34 is caused by the partition post 113 breaking off obliquely towards the adjacent epitaxial layer 310.
[0084] It should be noted that the limitations on each step involved in this solution are not considered as limiting the order of steps, provided that they do not affect the implementation of the specific solution. The steps listed first can be executed first, later, or even simultaneously. As long as this solution can be implemented, it should be considered to fall within the scope of protection of this application.
[0085] It should be noted that the inventive concept of this application can form many embodiments, but due to the limited space of the application documents, they cannot all be listed. Therefore, without conflict, the embodiments described above or the technical features can be arbitrarily combined to form new embodiments. After the embodiments or technical features are combined, the original technical effect will be enhanced.
[0086] The above description, in conjunction with specific optional embodiments, provides a further detailed explanation of this application and should not be construed as limiting the specific implementation of this application to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of this application, and all such modifications or substitutions should be considered within the scope of protection of this application.
Claims
1. A method for manufacturing an LED, characterized in that, The method for manufacturing the LED includes the following steps: A growth substrate and a transient substrate are provided, the transient substrate comprising a transient substrate and a first adhesive layer; A first sacrificial layer is formed on the growth substrate; a second sacrificial layer is formed on the growth substrate in a region other than the first sacrificial layer; Remove the first sacrificial layer; A decomposable layer and an epitaxial layer are formed on the growth substrate and on the second sacrificial layer; A first electrode is formed on the epitaxial layer, and the second sacrificial layer is removed; The epitaxial layer and the first electrode on the growth substrate are separated from the growth substrate together using the side of the transient substrate on which the first adhesive layer is provided; A second electrode is formed on the side of the epitaxial layer opposite to the first electrode to form an LED.
2. The method for manufacturing an LED according to claim 1, characterized in that, The steps of forming a first sacrificial layer on the growth substrate and forming a second sacrificial layer on the growth substrate in a region other than the first sacrificial layer include: A laser decomposition layer is formed on the growth substrate; A first sacrificial layer is formed on the laser decomposition layer; a second sacrificial layer is formed on the laser decomposition layer in a region other than the first sacrificial layer, wherein the first sacrificial layer is located in a first region and the second sacrificial layer is located in a second region; The steps of forming a first electrode on the epitaxial layer and removing the second sacrificial layer include: A first electrode is formed on the epitaxial layer; A light-shielding layer is formed on the side of the growth substrate opposite to the epitaxial layer, and the orthogonal projection of the light-shielding layer on the growth substrate covers the first region. The epitaxial layer, the first electrode, and the second sacrificial layer on the growth substrate are separated from the growth substrate together using the side of the transient substrate on which the first adhesive layer is disposed.
3. The method for manufacturing an LED according to claim 2, characterized in that, The step of forming the first electrode on the epitaxial layer includes: A first electrode metal layer is formed on the epitaxial layer; A photoresist layer is formed on the first electrode metal layer; Photolithography is performed simultaneously on the top and bottom of the photoresist layer in the first region, and only on the top or bottom of the photoresist layer in the second region, to form a first electrode on the epitaxial layer.
4. The method for manufacturing an LED according to claim 2, characterized in that, The step of separating the epitaxial layer and the first electrode together from the growth substrate using the side of the transient substrate where the first adhesive layer is disposed includes: Remove the light-shielding layer; The laser decomposition layer is irradiated with a laser, and the epitaxial layer and the first electrode on the growth substrate are separated from the growth substrate together using the side of the transient substrate where the first adhesive layer is disposed.
5. The method for manufacturing an LED according to claim 2, characterized in that, The steps preceding the formation of a first sacrificial layer on the laser decomposition layer and the formation of a second sacrificial layer on the laser decomposition layer in a region other than the first sacrificial layer, wherein the first sacrificial layer is located in a first region and the second sacrificial layer is located in a second region, include: A partition column is formed on the laser decomposition layer. The partition column is located at the intersection of four first and second regions arranged in a grid pattern. The height of the partition column is greater than the thickness of the second sacrificial layer.
6. The method for manufacturing an LED according to claim 1, characterized in that, The step of forming the decomposable layer and the epitaxial layer on the growth substrate and on the second sacrificial layer further includes: A crystalline alumina layer is formed on the second sacrificial layer; A decomposable layer and an epitaxial layer are formed on the growth substrate and on the crystalline alumina layer of the second sacrificial layer.
7. An LED manufacturing apparatus, characterized in that, The LED manufacturing equipment is used in the LED manufacturing method according to any one of claims 1-6, and the LED manufacturing equipment includes: A first apparatus includes a growth substrate, a first sacrificial layer forming apparatus, a second sacrificial layer forming apparatus, an epitaxial layer forming apparatus, a first electrode forming apparatus, a first sacrificial layer removal apparatus, and a second sacrificial layer removal apparatus. The first sacrificial layer forming apparatus is used to form a first sacrificial layer on the growth substrate; the second sacrificial layer forming apparatus is used to form a second sacrificial layer on the growth substrate; the epitaxial layer forming apparatus is used to form an epitaxial layer and a decomposable layer on the growth substrate; the first electrode forming apparatus is used to form a first electrode on the epitaxial layer; the first sacrificial layer removal apparatus is used to remove the first sacrificial layer; and the second sacrificial layer removal apparatus is used to remove the second sacrificial layer. The second machine tool includes a transient substrate and a second electrode generation device. The transient substrate includes a transient substrate and a first adhesive layer. The first adhesive layer is disposed on the transient substrate and is used to separate the epitaxial layer and the first electrode from the growth substrate together. The second electrode generation device is used to form a second electrode on the side of the epitaxial layer opposite to the first electrode to form an LED.
8. The LED manufacturing equipment according to claim 7, characterized in that, The growth substrate is further provided with a laser decomposition layer and a light-shielding layer, the first sacrificial layer is located in a first region, and the second sacrificial layer is located in a second region; the orthogonal projection of the light-shielding layer on the growth substrate covers the first region; the second sacrificial layer removal device is the transient substrate.
9. The LED manufacturing equipment according to claim 7, characterized in that, The first sacrificial layer is located in the first region, and the second sacrificial layer is located in the second region. The first region and the second region are arranged in a matrix. The growth substrate is also provided with partition pillars. The partition pillars are located at the intersection of the first region and the second region arranged in a grid pattern. The height of the partition pillars is greater than the thickness of the second sacrificial layer. The transient substrate further includes a plurality of shims, which are disposed on the transient substrate. The first adhesive layer is disposed on the shims, and an accommodating space is formed between two adjacent shims. The width of the accommodating space is greater than the width of the partition column.
10. An LED display panel, characterized in that, The LED display panel includes a driving backplate and an LED manufactured by the method of manufacturing an LED as described in any one of claims 1-6. The LED is connected to the driving backplate, and the driving backplate is used to drive the LED to emit light.