Process chamber and processing equipment and method of semiconductor device

Abstract

The invention provides a process chamber, and processing equipment and a processing method of a semiconductor device. The process chamber comprises a wafer supporting mechanism, a spraying head and a rotary lifting mechanism. The wafer supporting mechanism is located in the process chamber and used for supporting the edge of the wafer and exposing the back face of the wafer. The spraying head is located below the wafer supporting mechanism so as to spray process gas to the back face of the wafer. And the rotary lifting mechanism is positioned below the spray header, is connected with the spray header, and is used for lifting and / or rotating the spray header in the process of carrying out back deposition on the wafer so as to adjust the distance and / or the deflection angle between the spray header and the back of the wafer. By adjusting the distance and / or the deflection angle between the spraying head and the back surface of the wafer, the uniformity of the thickness of the film deposited on the back surface of the wafer can be improved.

Description

Technical Field

[0001] This invention relates to back-side deposition technology for semiconductor devices, and more particularly to a process chamber, a semiconductor device processing apparatus, and a semiconductor device processing method. Background Technology

[0002] To meet the growing demand for large-size wafer technology in the semiconductor industry, prior art, using Chinese patent applications 202010458535.9, 202111330341.1, and 202111330342.6 as examples, proposes some rotation and lifting mechanisms that can lift and / or rotate the heating plate in the front-side thin film deposition equipment to adjust the wafer's position in the process chamber, thereby improving the uniformity of front-side deposition.

[0003] In the field of back-side deposition technology for semiconductor devices, back-side deposition equipment suffers from challenges due to a series of complex factors, including the processing precision of the process chamber, the uniformity of air output from the spray head, the uniformity of heating from the heating plate, and the uniformity of air extraction from the extraction ring. These factors contribute to the inability to achieve uniform back-side film thickness. However, because back-side deposition equipment has a significantly different process chamber structure than front-side deposition equipment, existing technologies are not applicable to back-side deposition and cannot effectively alter the back-side film thickness. Therefore, there is an urgent need in the field for an improved process chamber to enhance the uniformity of wafer back-side deposition film thickness and adjust stress, thereby improving the processing quality of semiconductor devices. Summary of the Invention

[0004] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0005] To overcome the aforementioned deficiencies in the prior art, the present invention provides a process chamber, a semiconductor device processing apparatus, a semiconductor device processing method, and a computer-readable storage medium. By placing a spray head on the back side of the wafer and adjusting the distance and / or deflection angle between the spray head and the back side of the wafer during the back side deposition process, the uniformity of the film thickness deposited on the back side of the wafer and the stress adjustment can be improved, thereby enhancing the processing quality of the semiconductor device.

[0006] Specifically, the process chamber provided in the first aspect of the present invention includes a wafer support mechanism, a spray head, and a rotation and lifting mechanism. The wafer support mechanism is located inside the process chamber and is used to support the edge of the wafer and expose the back side of the wafer. The spray head is located below the wafer support mechanism to spray process gases onto the back side of the wafer. The rotation and lifting mechanism is located below and connected to the spray head, and is used to raise, lower, and / or rotate the spray head during back side deposition of the wafer to adjust the distance and / or deflection angle between the spray head and the back side of the wafer.

[0007] Furthermore, in some embodiments of the present invention, the wafer support mechanism includes: an edge ring for supporting the edge of the wafer and exposing the back side of the wafer; and an edge ring support mechanism for fixing the edge ring at a preset process height inside the process chamber during the back side deposition of the wafer, wherein the process height is greater than the top surface height of the spray head.

[0008] Furthermore, in some embodiments of the present invention, one end of the edge ring support mechanism is connected to the side wall of the process chamber, and the other end is connected to the edge ring, so as to fix the edge ring to the process height inside the process chamber.

[0009] Furthermore, in some embodiments of the present invention, one end of the edge ring support mechanism is connected to the bottom of the process chamber, and the other end is connected to the edge ring, so as to fix the edge ring to the process height inside the process chamber.

[0010] Furthermore, in some embodiments of the present invention, the process chamber further includes a wafer lifting mechanism, wherein one end of the edge ring support mechanism is connected to the wafer lifting mechanism, and the other end is connected to the edge ring. During the back-side deposition process of the wafer, the wafer lifting mechanism fixes the wafer at the process height inside the process chamber via the edge ring support mechanism.

[0011] Furthermore, in some embodiments of the present invention, the process chamber further includes a heating plate. The heating plate is located above the wafer support mechanism to heat the wafer during back-side deposition, wherein one end of the edge ring support mechanism is connected to the heating plate, and the other end is connected to the edge ring to fix the edge ring to the process height inside the process chamber, wherein the process height is less than or equal to the bottom surface height of the heating plate.

[0012] Furthermore, in some embodiments of the present invention, the bottom of the spray head is provided with a rotating shaft, one end of which is fixedly connected to the spray head, and the other end of which is fixedly connected to a rotating lifting mechanism located above or below the bottom of the process chamber. The rotating lifting mechanism includes a rotating mechanism located above or below the bottom of the process chamber, and includes a stator, a rotor, and a driving component. The stator is fixedly connected to the bottom of the process chamber and is used to drive the rotor to rotate around the rotating shaft. The driving component is sleeved between the rotating shaft and the rotor and is used to drive the rotating shaft to rotate with the rotor.

[0013] Furthermore, in some embodiments of the present invention, during the back-side deposition process of the wafer, the rotating mechanism adjusts the deflection angle between the spray head and the back side of the wafer by at least one reciprocating rotation from a preset starting position, first rotating in a preset first direction by a first angle and then rotating in the opposite second direction by a second angle.

[0014] Furthermore, in some embodiments of the present invention, the rotary lifting mechanism further includes a lifting mechanism located above or below the bottom of the process chamber and connected to the bottom of the process chamber and the rotary mechanism, respectively. The rotary mechanism further includes a connector, at least one sealing element, and a telescopic tubular assembly. The connector has a sliding groove, and the driving element extends into the sliding groove to slidably connect to the connector. The telescopic tubular assembly is sleeved around the rotary shaft, with its two ends sealingly connected to the bottom of the process chamber and the connector, respectively. At least one sealing element is sleeved around the driving element, with its two ends connected to the connector and the lifting mechanism, respectively.

[0015] Furthermore, in some embodiments of the present invention, the at least one seal is selected from at least one of a magnetic fluid seal, a magnetic coupling seal, a sealing ring seal, and a vacuum isolation ring.

[0016] Furthermore, in some embodiments of the present invention, at least one of the sealing elements is a magnetic fluid sealing element, which is sleeved around the periphery of the driving element and forms a magnetic fluid receiving space between itself and the outer side wall of the driving element, wherein the magnetic fluid receiving space contains magnetic fluid.

[0017] Furthermore, in some embodiments of the present invention, the process chamber further includes: a purge gas guide ring having a slit channel between it and the rotating shaft, and including uniformly distributed exhaust holes, wherein the purge gas guide ring provides purge exhaust gas uniformly distributed in the circumferential direction to the process chamber via the magnetic fluid seal and the slit channel.

[0018] Furthermore, in some embodiments of the present invention, the rotating mechanism further includes an air blowing device, the outer side of the connector is provided with an air inlet connected to the air blowing device, the connector is embedded with an annular air passage communicating with the air inlet, the bottom of the annular air passage is provided with a plurality of air outlets, and the vertical distance between the air outlets and the rotating shaft is less than the vertical distance between the outer side wall of the driving member and the rotating shaft.

[0019] Furthermore, in some embodiments of the present invention, the process chamber further includes a fixed support, which is located above or below the bottom of the process chamber and is fixedly connected to the bottom of the process chamber. The lifting mechanism includes a lifting support, a drive motor, a reducer, a threaded rod, and a threaded block, wherein the drive motor, the reducer, and the threaded rod are connected in sequence, the reducer is also fixedly connected to the fixed support, the threaded rod rotates under the drive of the reducer, and the threaded block is sleeved around the threaded rod to move up and down with the rotation of the threaded rod. One side of the threaded block is embedded in the guide groove on one side of the fixed support, and the other side is fixedly connected to the lifting support to drive the lifting support connected to the rotating mechanism to move up and down.

[0020] Furthermore, in some embodiments of the present invention, the bottom of the spray head is provided with a rotating shaft, one end of which is fixedly connected to the spray head, and the other end of which is fixedly connected to a rotating lifting mechanism located above or below the bottom of the process chamber. The rotating lifting mechanism includes a rotating mechanism located above or below the bottom of the process chamber, and includes a rotating motor, wherein the rotating motor is connected to the rotating shaft via a belt or gear to drive the rotating shaft to rotate.

[0021] Furthermore, the semiconductor device processing apparatus provided in the second aspect of the present invention includes one or more process chambers, wherein at least one process chamber is the process chamber provided in the first aspect.

[0022] Furthermore, the semiconductor device processing method provided in the third aspect of the present invention includes the following steps: placing a wafer to be processed onto a wafer support mechanism in the process chamber of the semiconductor device processing equipment provided in the second aspect; during the back-side deposition process of the wafer, raising and / or rotating the spray head at least once via a rotation and lifting mechanism of the process chamber to adjust the distance and / or deflection angle between the spray head and the back side of the wafer; and in response to the completion of the back-side deposition process, removing the processed wafer from the process chamber.

[0023] Furthermore, in some embodiments of the present invention, the step of adjusting the distance and / or deflection angle between the spray head and the back surface of the wafer by raising and / or rotating the spray head at least once via the rotary lifting mechanism of the process chamber includes: starting from a preset starting position, adjusting the deflection angle between the spray head and the back surface of the wafer by at least once rotating the spray head in a preset first direction by a first angle and then rotating it in the opposite second direction by a second angle, until returning to the starting position.

[0024] Furthermore, the computer-readable storage medium provided in the fourth aspect of the present invention stores computer instructions thereon. When the computer instructions are executed by a processor, the processing method of the semiconductor device provided in the third aspect is implemented. Attached Figure Description

[0025] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0026] Figure 1 A schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention is shown.

[0027] Figure 2 A schematic diagram of the assembly structure of the edge ring support mechanism and the sidewall of the process chamber provided according to some embodiments of the present invention is shown.

[0028] Figure 3 A schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention is shown.

[0029] Figure 4 A schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention is shown.

[0030] Figure 5 A schematic diagram of the assembly structure of the edge ring and edge ring support mechanism provided according to some embodiments of the present invention is shown.

[0031] Figure 6 A schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention is shown.

[0032] Figure 7 A cross-sectional structural schematic diagram of a rotary lifting mechanism provided according to some embodiments of the present invention is shown.

[0033] Figure 8 A three-dimensional structural schematic diagram of a lifting mechanism provided according to some embodiments of the present invention is shown.

[0034] Figure 9 A cross-sectional structural schematic diagram of a rotating mechanism provided according to some embodiments of the present invention is shown.

[0035] Figure 10 It shows Figure 9 A magnified view of the area shown in the elliptical box.

[0036] Figure 11 A cross-sectional structural schematic diagram of a rotary lifting mechanism provided according to some embodiments of the present invention is shown.

[0037] Figure 12 A front view schematic diagram of a rotating mechanism provided according to some embodiments of the present invention is shown.

[0038] Figure 13 A bottom view of the rotating mechanism provided according to some embodiments of the present invention is shown.

[0039] Figure 14 A cross-sectional structural schematic diagram of a rotating mechanism provided according to some embodiments of the present invention is shown.

[0040] Figure 15 A three-dimensional structural schematic diagram of a rotary sliding support provided according to some embodiments of the present invention is shown.

[0041] Figure 16 A three-dimensional structural schematic diagram of a sliding column and a limiting ring provided according to some embodiments of the present invention is shown.

[0042] Figure 17 A three-dimensional structural schematic diagram of a fixing bracket provided according to some embodiments of the present invention is shown.

[0043] Figure 18 A cross-sectional structural schematic diagram of a lifting mechanism and a passive lifting and rotating component provided according to some embodiments of the present invention is shown.

[0044] Figure 19 A schematic diagram of the structure of a rotary lifting mechanism provided according to some embodiments of the present invention is shown.

[0045] Figure 20 It shows Figure 19 A magnified schematic diagram of a portion of region A in the middle.

[0046] Figure 21 It shows Figure 20 A magnified schematic diagram of a portion of region B.

[0047] Figure 22 A schematic flowchart of a method for fabricating a semiconductor device according to some embodiments of the present invention is shown.

[0048] Figure 23A schematic diagram of a reciprocating rotation provided according to some embodiments of the present invention is shown. Detailed Implementation

[0049] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0050] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0051] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as referring to the orientations shown in the relevant paragraphs and accompanying drawings. This relative use of terms is for illustrative purposes only and does not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as a limitation of the invention. In this invention, "height" refers to the vertical distance from the target object to the bottom of the process chamber.

[0052] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0053] As mentioned above, in the field of back-side deposition technology for semiconductor devices, due to a series of complex factors such as the processing precision of the process chamber, the uniformity of gas output from the spray head, the uniformity of heating from the heating plate, and the uniformity of gas extraction from the extraction ring, back-side deposition equipment for semiconductor devices also suffers from the problem that the back-side film thickness cannot meet the uniformity requirements. However, since back-side deposition equipment has a completely different process chamber structure from front-side deposition equipment, prior art solutions for front-side deposition cannot be applied to back-side deposition equipment, nor can they effectively change the thickness of the back-side film.

[0054] To overcome the aforementioned deficiencies in the prior art, the present invention provides a process chamber, a semiconductor device processing apparatus, a semiconductor device processing method, and a computer-readable storage medium. By placing a spray head on the back side of the wafer and adjusting the distance and / or deflection angle between the spray head and the back side of the wafer during the back side deposition process, the uniformity of the film thickness deposited on the back side of the wafer and the stress adjustment can be improved, thereby enhancing the processing quality of the semiconductor device.

[0055] In some non-limiting embodiments, the semiconductor device processing method provided in the third aspect can be implemented by the semiconductor device processing equipment provided in the second aspect. Specifically, the semiconductor device processing equipment may include one or more process chambers, wherein at least one process chamber is the process chamber provided in the first aspect.

[0056] Furthermore, in some non-limiting embodiments, the processing apparatus provided in the second aspect may also include a memory and a controller. The memory includes, but is not limited to, the computer-readable storage medium provided in the fourth aspect, on which computer instructions are stored. The controller is connected to the memory and configured to execute the computer instructions stored in the memory to implement the semiconductor device processing method provided in the third aspect.

[0057] Please refer to the following first. Figures 1-6 . Figure 1 , Figure 3 , Figure 4 and Figure 6 Schematic diagrams of the structure of the process chamber provided according to some embodiments of the present invention are shown respectively. Figure 2 A schematic diagram of the assembly structure of the edge ring support mechanism and the sidewall of the process chamber provided according to some embodiments of the present invention is shown. Figure 5 A schematic diagram of the assembly structure of the edge ring and edge ring support mechanism provided according to some embodiments of the present invention is shown.

[0058] exist Figure 1In the illustrated embodiment, the process chamber provided by the first aspect of the present invention includes a wafer support mechanism 11, a spray head 12, a rotation and lifting mechanism 13, and a heating plate 14. Here, the wafer support mechanism 11 is disposed inside the process chamber to support the edge of the wafer 20 and expose the back side of the wafer 20. The spray head 12 is disposed below the wafer support mechanism 11 and is used to spray process gases onto the back side of the wafer 20 during back side deposition. The heating plate 14 is disposed above the wafer support mechanism 11 and is used to heat the front side of the wafer 20 during back side deposition. The rotation and lifting mechanism 13 is disposed below the spray head 12, and can be located above or below the bottom 17 of the process chamber, for raising, lowering, and / or rotating the spray head 12 during back side deposition to adjust its distance and / or deflection angle from the back side of the wafer 20.

[0059] By adjusting the distance between the spray head 12 and the back surface of the wafer 20, this invention can effectively regulate the radial partial pressure of the process gas on the back surface of the wafer 20, thereby adjusting the film thickness distribution in the central and edge regions of the back surface of the wafer 20 during back surface deposition. Furthermore, by adjusting the deflection angle between the spray head 12 and the back surface of the wafer 20, this invention can effectively avoid the problem of uneven film thickness distribution caused by uneven gas exit rates around the spray head 12.

[0060] Furthermore, such as Figure 1 and Figure 2 As shown, the wafer support mechanism 11 may include an edge ring 111 and an edge ring support mechanism 112. Here, the edge ring 111 is located below the wafer 20, surrounding and supporting the non-process area on the back edge of the wafer 20, and exposing the process area at the center of the back edge of the wafer 20. The edge ring support mechanism 112 may be a ring structure or composed of multiple pins, used to fix the edge ring 111 at the process height inside the process chamber during the back-side deposition of the wafer 20, so that the rotary lifting mechanism 13 can precisely adjust the distance and / or deflection angle between the spray head 12 and the back edge of the wafer 20. Here, the process height refers to the vertical distance from the back edge of the wafer 20 to the bottom 17 of the process chamber during the process. It can be greater than the maximum lifting top surface height of the spray head 12 and less than or equal to the bottom surface height of the heating plate 14, to avoid the wafer 20 colliding with the spray head 12 or the heating plate 14.

[0061] Specifically, in Figure 1 and Figure 2In the illustrated embodiment, one end of the edge ring support mechanism 112 can be connected to the mounting structure 15 on the side wall of the process chamber, while the other end can extend inward at an angle upward or downward to connect to the edge ring 111, thereby fixing the edge ring 111 at the process height inside the process chamber. Here, the mounting structure 15 can be a support ring extending horizontally on the inner wall of the process chamber, or it can be a plurality of support seats distributed horizontally on the inner wall of the process chamber.

[0062] In addition, Figure 3 In the embodiment shown, which includes a heating plate 14, one end of the edge ring support mechanism 112 can be connected to the heating plate 14, while the other end can extend downward to connect to the edge ring 112, thereby fixing the edge ring 112 at the process height inside the process chamber. Here, the process height can be equal to the bottom surface height of the heating plate 14, allowing the heating plate 14 to heat the front side of the wafer 20 via heat conduction, or it can be less than the bottom surface height of the heating plate 14, allowing the heating plate 14 to heat the front side of the wafer 20 via thermal radiation and / or gas convection.

[0063] In addition, Figure 4 In the embodiment shown, one end of the edge ring support mechanism 111 can be connected to the bottom 17 of the process chamber, while the other end can extend upward to a preset process height to connect the edge ring 112, thereby fixing the edge ring 112 at the process height inside the process chamber.

[0064] Furthermore, such as Figure 5 As shown, the upper end of the edge ring support mechanism 112 may be provided with at least one groove, and the bottom surface of the edge ring 111 may be provided with at least one protrusion to engage with the corresponding groove at the upper end of the edge ring support mechanism 112, so as to achieve stable support for the edge ring 111 and the wafer 20 above it.

[0065] In addition, Figure 6 In the illustrated embodiment, the process chamber is further equipped with a wafer lifting mechanism 16. This wafer lifting mechanism 16 can be located above or below the bottom 17 of the process chamber. During the wafer 20 transfer process, it is used to lift and fix the edge ring 111 to a preset transfer height inside the process chamber, and during the backside deposition process of the wafer 20, it lifts and fixes the edge ring 111 to a preset process height inside the process chamber. Here, the transfer height refers to the vertical distance from the backside of the wafer 20 to the bottom 17 of the process chamber during the transfer process.

[0066] Specifically, one end of the edge ring support mechanism 111 can be directly connected to the wafer lifting mechanism 16 above the bottom 17 of the process chamber, or pass through the bottom 17 of the process chamber to connect to the wafer lifting mechanism 16 below it. The other end of the edge ring support mechanism 111 can extend upward to a preset height to connect to the edge ring 112. Thus, in the wafer 20 transfer process, the edge ring 111 is raised, lowered and fixed to a preset transfer height inside the process chamber, and in the back-side deposition process of the wafer 20, the edge ring 111 is raised, lowered and fixed to a preset process height inside the process chamber.

[0067] Furthermore, please refer to the references. Figures 7-10 . Figure 7 A cross-sectional structural schematic diagram of a rotary lifting mechanism provided according to some embodiments of the present invention is shown. Figure 8 A three-dimensional structural schematic diagram of a lifting mechanism provided according to some embodiments of the present invention is shown. Figure 9 A cross-sectional structural schematic diagram of a rotating mechanism provided according to some embodiments of the present invention is shown. Figure 10 It shows Figure 9 A magnified view of the area shown in the elliptical box.

[0068] like Figure 7 As shown, the spray head 12 provided by the present invention has a rotating shaft 121 at its bottom, the upper end of which is fixedly connected to the body of the spray head 12, and the lower end of which is connected to the rotating lifting mechanism 13. The rotating lifting mechanism 13 may include a lifting mechanism 131 and a rotating mechanism 132, which may be located above or below the bottom 17 of the process chamber.

[0069] In an embodiment where the rotary lifting mechanism 13 is located below the bottom 17 of the process chamber, the bottom 17 of the process chamber may have a through hole. The rotating shaft 121 of the spray head 12 is located below the body of the spray head 12 and is fixedly connected to the body of the spray head 12, with its bottom end passing through the through hole and extending out of the process chamber to connect to the rotary lifting mechanism 13. As an example, the rotating shaft 121 is fixedly connected to the center of the lower surface of the body of the spray head 12, and its interior is hollow to allow process gas to enter the body of the spray head 12 through the hollow portion.

[0070] like Figure 7 As shown, a fixed bracket 71 may also be provided below the process chamber. This fixed bracket 71 is fixedly connected to the bottom 17 of the process chamber. As an example, the fixed bracket 71 includes a support portion 711 and a guide rail block 712. The top end of the support portion 711 is fixedly connected to the bottom 17 of the process chamber. The guide rail block 712 is located on the side of the support portion 711 and is fixedly connected to it. In this embodiment, one side of the fixed bracket 71 may further be provided with a guide rail groove. The guide rail groove opens from the side of the guide rail block 712 opposite to the support portion 711.

[0071] In addition, the lifting mechanism 131 can be located below the process chamber and connected to the fixed bracket 71, including the lifting bracket 1311. The lifting bracket 1311 is fixedly connected to the rotating mechanism 132 to drive the rotating mechanism 132 to perform lifting movements.

[0072] Furthermore, such as Figure 8 As shown, the lifting mechanism 131 may further include a drive motor 1312, a reducer 1313, a threaded rod 1314, and a threaded block 1315. The drive motor 1312, reducer 1313, and threaded rod 1314 are connected sequentially from bottom to top. Furthermore, the reducer 1313 is fixedly connected to the fixed bracket 71. The threaded rod 1314 rotates under the drive of the reducer 1313. The threaded block 1315 is fitted around the threaded rod 1314 to move up and down with the rotation of the threaded rod 1314. One side of the threaded block 1315 is embedded in the guide groove of the fixed bracket 71 to ensure stable lifting movement. The other side of the threaded block 1315 is fixedly connected to the lifting bracket 1311 to drive the lifting bracket 1311 to move up and down, thereby driving the rotating mechanism 132 to move up and down. As an example, the top of the reducer 1313 can be fixedly connected to the bottom of the guide block 712 of the fixed bracket 71 to stably reduce the speed of the drive motor 1312. Here, the drive motor 1312 can be a servo motor.

[0073] In addition, such as Figure 9 As shown, the rotating mechanism 132 can also be located below the process chamber, including a stator 1321, a rotor 1322, a drive member 1323, a connector 1324, at least one magnetic fluid seal 1325, a magnetic fluid 1326, and a telescopic tubular assembly 1327. Specifically, the stator 1321 is fixedly connected to the lifting bracket 1311 and sleeved around the rotor 1322 to drive the rotor 1322 to rotate around the rotating shaft 121. The drive member 1323 is located above the rotor 1322 and is fixedly connected to the rotor 1322. In addition, the drive member 1323 is also sleeved around the rotating shaft 121 and fixedly connected to the rotating shaft 121. The telescopic tubular assembly 1327 is located above the drive member 1323 and sleeved around the rotating shaft 121. The top of the telescopic tubular assembly 1327 is sealed to the bottom 17 of the process chamber. The bottom of the telescopic tubular assembly 1327 is sealed to the top of the connector 1324. At least one magnetic fluid seal 1325 is fitted around the drive member 1323, forming a magnetic fluid receiving space between itself and the outer wall of the drive member 1323. Magnetic fluid 1326 is located within the magnetic fluid receiving space. The top of the magnetic fluid seal 1325 is sealed to the bottom of the connector 1324, while its bottom is sealed to the top of the lifting bracket 1311.

[0074] Those skilled in the art will understand that although the above embodiments place a magnetic fluid seal 1325 on the periphery of the driving member 1323, this does not limit the number and placement of the magnetic fluid seals 1325 in the rotating mechanism 132. Optionally, in other embodiments, those skilled in the art can also place any number of magnetic fluid seals at any position requiring sealing, according to actual sealing needs.

[0075] Furthermore, as an example, the top of the stator 1321 can be fixedly connected to the lifting bracket 1311 and may include an iron core and a coil. The coil is located between the iron core and the rotor 1322. Under the influence of the magnetic field generated by the iron core and the coil, the rotor 1322 rotates around the rotating shaft 121, which in turn drives the drive component 1323 to rotate, thereby driving the rotating shaft 121 to rotate.

[0076] Furthermore, as an example, the bottom of the connector 1324 may be provided with a sliding groove. The top end of the drive member 1323 may extend into the sliding groove and slide in connection with the connector 1324 to enhance the rotational stability of the drive member 1323.

[0077] Since the driving component 1323 needs to rotate, a certain clearance needs to be left between its top end and the connecting component 1324. In order to achieve the sealing of the top area of ​​the driving component 1323, the present invention utilizes the magnetic fluid seal 1325 and the magnetic fluid 1326 to achieve the sealing of the top area of ​​the driving component 1323.

[0078] Specifically, the magnetic fluid 1326 can be adsorbed onto the inner surface of the magnetic fluid seal 1325 and the outer surface of the driving member 1323. When the driving member 1323 rotates, the magnetic fluid remains adsorbed, isolating the internal space of the driving member 1323 from the outside. As an example, the magnetic fluid seal 1325 and the connecting member 1324 can be fixedly connected by fasteners. In addition, a sealing ring can be provided between the top of the magnetic fluid seal 1325 and the bottom of the connecting member 1324 to achieve a seal at the interface. Furthermore, the magnetic fluid seal 1325 and the lifting bracket 1311 can be fixedly connected by fasteners, and a sealing ring can also be provided between the bottom of the magnetic fluid seal 1325 and the top of the lifting bracket 1311 to achieve a seal at the interface.

[0079] Furthermore, as an example, the telescopic tubular assembly 1327 may include a first fixing member, a bellows, and a second fixing member. The top and bottom ends of the bellows can be fixedly connected to the first fixing member and the second fixing member, respectively. The first fixing member is sealed to the bottom 17 of the process chamber. Specifically, the first fixing member and the process chamber can be fixed by fasteners, and a sealing ring can be provided between the top surface of the first fixing member and the bottom 17 of the process chamber to achieve interface sealing.

[0080] In addition, such as Figure 9 As shown, the rotating mechanism 132 may also include an air blowing device 1328. The outer surface of the connector 1324 is provided with an air inlet 13291 connected to the air blowing device 1328. An annular air passage 1320 communicating with the air inlet 1329 is embedded within the connector 1324. The bottom of the annular air passage 1320 is provided with multiple air outlets 13292, the vertical distance between which is less than the vertical distance between the outer wall of the driving member 1323 and the rotating shaft 121. Thus, by continuously blowing air into the connector 1324, the air blowing device 1328 can use the blown airflow to prevent microparticles generated during chemical vapor deposition in the process chamber from falling into the magnetic fluid 1326 of the rotating mechanism 132, thereby avoiding affecting the sealing effect of the magnetic fluid 1326.

[0081] Thus, during the lifting and / or rotating of the spray head 12, the lifting bracket 1311 of the lifting mechanism 131 can move up and down with the threaded block 1315, driving the rotating mechanism 132 to move up and down. The rotor 1322 of the rotating mechanism 132 can rotate around the rotating shaft 121 while lifting, thereby driving the drive component 1323 to move up and down, and subsequently driving the rotating shaft 121 and the spray head 12 to move up and down. Furthermore, during the rising of the spray head 12, the telescopic tubular assembly 1327 will shorten accordingly, and during the falling of the spray head 12, the telescopic tubular assembly 1327 will extend accordingly.

[0082] Those skilled in the art will understand that Figures 7-10 The rotating lifting mechanism shown is merely a non-limiting embodiment of the present invention, intended to clearly demonstrate the main concept of the invention and provide some specific solutions that are easy for the public to implement, rather than to limit the scope of protection of the present invention.

[0083] Optionally, please refer to the reference. Figures 11-18 . Figure 11 A cross-sectional structural schematic diagram of a rotary lifting mechanism provided according to some embodiments of the present invention is shown. Figure 12 A front view schematic diagram of a rotating mechanism provided according to some embodiments of the present invention is shown. Figure 13 A bottom view of the rotating mechanism provided according to some embodiments of the present invention is shown. Figure 14 A cross-sectional structural schematic diagram of a rotating mechanism provided according to some embodiments of the present invention is shown. Figure 15 A three-dimensional structural schematic diagram of a rotary sliding support provided according to some embodiments of the present invention is shown. Figure 16 A three-dimensional structural schematic diagram of a sliding column and a limiting ring provided according to some embodiments of the present invention is shown. Figure 17A three-dimensional structural schematic diagram of a fixing bracket provided according to some embodiments of the present invention is shown. Figure 18 A cross-sectional structural schematic diagram of a lifting mechanism and a passive lifting and rotating component provided according to some embodiments of the present invention is shown.

[0084] exist Figures 11-18 In the embodiment shown, the rotary lifting mechanism 13 may include a retractable component, a passive lifting and rotating component 232, a rotating mechanism 233, and a lifting mechanism 234.

[0085] like Figure 11 As shown, the telescopic assembly includes a telescopic tubular component 2311 and a drive ring 2312 sleeved around the rotating shaft 221 of the spray head 12. The top and bottom ends of the telescopic tubular component 2311 are fixedly connected to the spray head 12 and the drive ring 2312, respectively. The telescopic assembly can extend as the spray head 12 rises and shorten as the spray head 12 falls. In this embodiment, the telescopic tubular component 2311 may include a bellows to prevent particles in the process chamber from entering the rotating mechanism 233 and causing contamination and impact. Simultaneously, the bellows also provides cushioning for the raising and lowering of the spray head 12.

[0086] In addition, the passive lifting and rotating component 232 is also sleeved around the rotating shaft 221 and fixedly connected to the lower part of the rotating shaft 221. It should be noted that, due to... Figure 11 The spray head is not shown in the image, therefore Figure 11 The upper part of the rotating shaft 221 does not appear to be connected to the spray head 12. However, in reality, the upper part of the rotating shaft 221 is fixedly connected to the spray head.

[0087] In addition, such as Figures 11-14 As shown, the rotating mechanism 233 can be fixedly connected to the retractable component to drive the retractable component to perform reciprocating rotational motion, thereby sequentially driving the spray head 12, the rotating shaft 221 and the passive lifting and rotating component 232 to perform reciprocating rotational motion.

[0088] Furthermore, the rotating mechanism 233 may include a vacuum isolation ring 2331, an active rotating component, and a passive rotating component. The vacuum isolation ring 2331 is fitted around the rotating shaft 221, with its top end sealed to the bottom 17 of the process chamber and its bottom end sealed to the lifting mechanism 234. The passive rotating component is located inside the vacuum isolation ring 2331 and is fixedly connected to the driving ring 2312. The active rotating component is located outside the vacuum isolation ring 2331 to drive the passive rotating component to reciprocate.

[0089] As an example, the active rotation component includes an active rotation block 2332 and an active magnet 2333. The active magnet 2333 is disposed on the side of the active rotation block 2332 facing the passive rotation component and is spaced at a predetermined distance from the vacuum isolation ring 2331. The passive rotation component includes a passive rotation block 2334 and a passive magnet 2335. The passive magnet 2335 is disposed on the side of the passive rotation block 2334 facing the active rotation component and is spaced at a predetermined distance from the vacuum isolation ring 2331 (i.e., neither the active magnet 2333 nor the passive magnet 2335 is in contact with the vacuum isolation ring 2331).

[0090] Furthermore, on the side of the active rotating block 2332 facing the passive rotating component, a plurality of evenly arranged strip-shaped active magnets 2333 are fixedly connected. A certain gap is left between adjacent active magnets 2333, and the magnetic poles pointing towards the center of the vacuum isolation ring 2331 are all opposite. On the side of the passive rotating block 2334 facing the active rotating component, a plurality of evenly arranged passive magnets 2335 are fixedly connected. The passive magnets 2335 have the same shape as the active magnets 2333. The magnetic pole faces of the passive magnets 2335 and the active magnets 2333 are directly opposite, and their magnetic poles are all opposite.

[0091] As an example, the active magnet 2333 can be configured as a single layer or multiple layers in the direction pointing towards the center of the vacuum isolation ring 2331. The passive magnet 2335 can also be configured as a single layer or multiple layers in the direction pointing towards the center of the vacuum isolation ring 2331. In this way, by configuring multiple layers of magnets, the magnetic force can be effectively increased.

[0092] In addition, such as Figures 11-14 As shown, the passive rotation assembly also includes a first passive rotation connector 2336 and a second passive rotation connector 2337 located within the through hole 17 at the bottom of the process chamber. The first passive rotation connector 2336 is fixedly connected to the top of the passive rotation block 2334 and the side of the driving ring 2312, and the second passive rotation connector 2337 is fixedly connected to the bottom of the first passive rotation connector 2336 and the bottom of the driving ring 2312. Both the first passive rotation connector 2336 and the second passive rotation connector 2337 can be made of magnetic shielding material.

[0093] As an example, the first passive rotary connector 2336 and the driving ring 2312 can be fixedly connected by a snap-fit ​​method. For example, the side wall of the driving ring 2312 may be provided with at least one slot for fixing the first passive rotary connector 2336.

[0094] Furthermore, the bottom surface of the first passive rotating connector 2336 may be provided with a guide rail 2338. The top surface of the vacuum isolation ring 2331 may be provided with a protrusion 2339 extending into the guide rail 2338 to increase the stability of the first passive rotating connector 2336 during rotation.

[0095] Furthermore, the aforementioned active rotating block 2332 is slidably connected to the vacuum isolation ring 2331 via a first bearing and a second bearing. The first bearing is located above the active magnet 2333, while the second bearing is located below the active magnet 2333. The passive rotating block 2334 is slidably connected to the vacuum isolation ring 2331 via a third bearing and a fourth bearing. The third bearing is located above the passive magnet 2335. The fourth bearing is located below the passive magnet 2335. The protrusion 2339 on the top surface of the vacuum isolation ring 2331 is slidably connected to the passive rotating block 2334 via a fifth bearing.

[0096] In addition, such as Figure 15 As shown, a rotary sliding support 151 is provided between the bottom of the vacuum isolation ring 2331 and the bottom of the passive rotating block 2334, including a first sliding plate 151a, a plurality of sliding posts 151b, a limiting ring 151c, and a second sliding plate 151d. The first sliding plate 151a is located above the second sliding plate 151d. The plurality of sliding posts 151b and the limiting ring 151c are sandwiched between the first sliding plate 151a and the second sliding plate 151d. Figure 16 As shown, multiple sliding posts 151b are evenly embedded in the circumference of the limiting ring 151c.

[0097] Furthermore, the aforementioned rotating mechanism 233 also includes a rotating drive assembly. This rotating drive assembly includes a stator and a rotor. The rotor is fixedly connected to the bottom of the active rotating assembly. The stator is fixedly connected to the process chamber via a fixed bracket 171 and is fitted around the rotor to drive the rotor to perform circumferential reciprocating rotational motion.

[0098] like Figure 17 As shown, the fixed bracket 171 may include a first bracket 1711 and a second bracket 1712. The top end of the first bracket 1711 is fixedly connected to the process chamber. The second bracket 1712 is disposed on one side of the first bracket 1711 and is sleeved around the active rotating assembly. The stator 23307 is fixedly connected to the second bracket 1712 to achieve the support and fixation of the rotating mechanism 233 by the fixed bracket 171.

[0099] In addition, such as Figure 18 As shown, the lifting mechanism 234 is rotatably and slidably connected to the passive lifting and rotating component 232, which drives the passive lifting and rotating component 232 to perform lifting and lowering movements, thereby driving the rotating shaft 221 and the spray head 12 to perform lifting and lowering movements. The passive lifting and rotating component 232 extends as the spray head 12 rises and shortens as the spray head 12 falls.

[0100] Specifically, the lifting mechanism 234 may include a tube sleeve fixing ring 2341, a telescopic tube sleeve 2342, an air delivery chamber 2343, an air delivery chamber connector 2344, a lifting platform 2345, and a lifting drive device. The air delivery chamber connector 2344 is located inside the passively rotating lifting component 232 and is rotatably and slidably connected to the passively rotating lifting component 232 via bearings. The top of the air delivery chamber 2343 is fixedly connected to the air delivery chamber connector 2344, while its bottom is sealed to the lifting platform 2345. The telescopic tube sleeve 2342 is fitted around the air delivery chamber 2343 and spaced a predetermined distance from the outer wall of the air delivery chamber 2343. The tube sleeve fixing ring 2341 is fitted around the passively rotating lifting component 232, with its top sealed to the bottom of the vacuum isolation ring 2341 and its bottom sealed to the air inlet of the air delivery chamber 2343. The lifting drive device is connected to the lifting platform 2345 to drive the lifting platform 2345 to move up and down, which in turn drives the air supply chamber 2343, the air supply chamber connector 2344, the passive rotating lifting component 232, the rotating shaft 221 and the spray head 12 to move up and down in sequence. The telescopic sleeve 2342 shortens as the air supply chamber 2343 rises and extends as the air supply chamber 2343 falls.

[0101] Furthermore, a first sealing ring can be provided between the top end of the vacuum isolation ring 2331 and the bottom 17 of the process chamber to achieve a sealed connection. A sealing groove for accommodating the first sealing ring is provided in the vacuum isolation ring 2331 or the bottom 17 of the process chamber. A second sealing ring is provided between the top end of the sleeve fixing ring 2341 and the bottom end of the vacuum isolation ring 2331 to achieve a sealed connection. A sealing groove for accommodating the second sealing ring is provided in the top end of the sleeve fixing ring 2341 or the bottom end of the vacuum isolation ring 2331. A third sealing ring is provided between the bottom of the gas delivery chamber 2343 and the top of the lifting platform 2345 to achieve a sealed connection. A sealing groove for accommodating the third sealing ring is provided in the bottom of the gas delivery chamber 2343 or the top of the lifting platform 2345. The top end of the telescopic sleeve 2342 is sealed to the lower surface of the sleeve fixing ring 2341 and is fitted around the passive rotating lifting component 232. The top of the sleeve retaining ring 2341 is sealed to the bottom of the vacuum isolation ring 2331, while its bottom is sealed to the top of the telescopic sleeve 2342. The bottom of the telescopic sleeve 2342 is sealed to the bottom of the gas delivery chamber 2343. In this way, the internal spaces of the process chamber, the vacuum isolation ring 2331, the sleeve retaining ring 2341, the telescopic sleeve 2342, and the gas delivery chamber 2343 are connected and isolated from the external space, thereby achieving a physical ultra-high vacuum state.

[0102] In addition, such as Figure 18As shown, the lifting drive device includes a lifting drive motor, a threaded rod, a threaded block, and a lifting bracket. The lifting drive motor is connected to the threaded rod to drive its rotation. The threaded block is fitted around the threaded rod. The threaded block has threads that mate with the threaded rod, allowing it to rise and fall with the rotation of the threaded rod. The lifting bracket is fixedly connected to the threaded block and the lifting platform 5, further driving the lifting platform 2345 to rise and fall under the influence of the threaded block.

[0103] As an example, such as Figure 11 and Figure 18 As shown, the lifting drive device is fixedly connected to the bottom of the first bracket 1711 of the process chamber via a fixed bracket 171.

[0104] Furthermore, the lifting drive device also includes a lifting slide rail 2346 and a lifting guide rail 2347. The lifting guide rail 2347 is disposed on the side of the first bracket 1711 facing the lifting bracket. The lifting slide rail 2346 is disposed on the side of the lifting bracket 2340 facing the first bracket 1711 and its shape matches that of the lifting guide rail 2347, so that the lifting slide rail 2346 slides and rises along the lifting guide rail 2347, thereby improving the stability of the lifting.

[0105] Optionally, please refer to the reference. Figures 19-21 . Figure 19 A schematic diagram of the structure of a rotary lifting mechanism provided according to some embodiments of the present invention is shown. Figure 20 It shows Figure 19 A magnified schematic diagram of a portion of region A in the middle. Figure 21 It shows Figure 20 A magnified schematic diagram of a portion of region B.

[0106] like Figures 19-21 As shown, the aforementioned rotary lifting mechanism may include a rotary mechanism. This rotary mechanism can be located outside the process chamber and includes a rotary power mechanism and a rotary sealing mechanism 311. The rotary sealing mechanism 311 includes a rotating component 3111 and a fixed component 3112. The fixed component 3112 is fixedly and sealingly connected to the process chamber. The rotating component 3111 is fixedly and sealingly connected to the spray head 12 and is movably and sealingly connected to the fixed component 3112. Furthermore, the rotating component 3111 is connected to the rotary power mechanism, so that the rotary power mechanism drives the rotating component 3111 and the spray head 12 to perform reciprocating rotary operation.

[0107] As an example, the rotary sealing mechanism 311 may include one of a magnetohydrodynamic rotary sealing mechanism, a magnetic coupling rotary sealing mechanism, and a sealing ring rotary sealing mechanism. Specifically, in this embodiment, the rotary sealing mechanism 311 may be a magnetohydrodynamic rotary sealing mechanism, but it is not limited to this. For example, when the rotation speed is low, a simpler sealing ring rotary sealing mechanism may be used instead, but the sealing ring rotary sealing mechanism suffers from wear problems, and the vacuum degree is not easy to guarantee. Alternatively, a magnetic coupling rotary sealing mechanism with a higher vacuum degree may be used instead, but the magnetic coupling rotary sealing mechanism has a complex structure and large volume. Therefore, the specific type of rotary sealing mechanism 311 can be selected according to the process requirements, and no excessive restrictions are imposed here.

[0108] In addition, such as Figure 20 As shown, the rotating component 3111 and the fixed component 3112 can be movably connected by bearings, and these bearings can include a radial bearing 31131 and an end-face bearing 31132. Specifically, the magnetohydrodynamic rotary sealing mechanism includes a rotating component 3111 and a fixed component 3112 with a concentric axis, and the rotating component 3111 and the fixed component 3112 are movably connected by the radial bearing 31131 and the end-face bearing 31132. The fixed component support 3114 achieves a fixed connection between the rotating component 3111, the fixed component 3112, and the bearings, and the bearings allow the rotating component 3111 to rotate relative to the concentric axis. Here, the combination of the radial bearing 31131 and the end-face bearing 31132, two different types of bearings, further ensures the concentricity and support capacity of the rotating component 3111 and the fixed component 3112, enabling precise and reliable relative rotation, and allowing the rotating component 3111 to rotate freely under the drive of the rotary power mechanism.

[0109] Furthermore, a gap 3115 can be designed between the rotating component 3111 and the fixed component 3112 to ensure that the rotating component 3111 does not contact the fixed component 3112 during rotation, thereby avoiding friction or jamming. However, since this gap 3115 connects the inside and outside of the process chamber, it needs to be sealed. Because the magnetorheological fluid 3116 has reliable sealing properties, can achieve a high vacuum level, and can reliably seal at both high and low rotational speeds, fully meeting the vacuum requirements of CVD equipment, a good seal can be achieved by injecting magnetorheological fluid 3116 into the gap 3115. However, the location, specific structure, and sealing method of the rotary sealing mechanism 3112 are not limited to this.

[0110] Specifically, such as Figures 19-21As shown, a purge gas guide ring 321 can be provided in the aforementioned process chamber, and a slit channel 322 is formed between the purge gas guide ring 321 and the rotating shaft of the spray head 12. The width W of the slit channel 322 ranges from 0 mm to W ≤ 1 mm, and its length L ranges from L ≥ 5 mm. The blowing device can provide purge exhaust gas to the process chamber through the purge gas guide ring 321, which flows sequentially through the rotary sealing mechanism 311 and the slit channel 322, to form a pressure difference, thereby further forming an isolation channel to prevent foreign substances such as the magnetohydrodynamic fluid 3116 from entering the process chamber. Here, the purge gas is preferably an inert gas such as N2 or He. The appropriate purge gas can be selected according to different CVD process requirements to prevent the purge exhaust gas ejected from the slit channel 322 from mixing with the reaction gas after entering the process chamber, thus affecting the quality of the deposited film.

[0111] Furthermore, the width W of the aforementioned slit channel 322 can be selected from a range of 0.5 mm, 0.8 mm, etc. The length L of the aforementioned slit channel 322 can be selected from 6 mm, 10 mm, etc., to meet design requirements and provide uniformly distributed purge exhaust gas.

[0112] Furthermore, the aforementioned purge gas guide ring 321 may include a plurality of uniformly distributed holes 323. These plurality of uniformly distributed holes 323 may be evenly distributed so that the purge gas 33 flows out evenly in the circumferential direction.

[0113] like Figure 21 As shown, to ensure uniform outflow of the purge gas, the present invention incorporates the aforementioned uniform gas distribution holes 323, allowing the purge gas to enter an annular groove from the interface. The bottom of the groove is provided with a plurality of uniformly distributed uniform gas distribution holes 323, which act as throttling devices, thereby ensuring a uniform outflow of the purge gas and creating a uniformly distributed purge exhaust gas, thus generating a pressure difference. In this way, the present invention can form a barrier through the purge gas to prevent external substances from entering the process chamber and to prevent the magnetorheological fluid 3116 from contacting the reaction gas within the process chamber.

[0114] Furthermore, the plurality of air distribution holes 323 can be located on the same vertical line as the gap between the rotating member 3111 and the fixed member 3112 to improve the isolation effect. The morphology and distribution of the air distribution holes 323 are not excessively limited here and can be set as needed.

[0115] In addition, such as Figure 19As shown, the rotary lifting mechanism 13 may further include a bellows 34 that is sealed and connected to the process chamber and the fixing member 3112, and a lifting power mechanism 35 located outside the process chamber and connected to the fixing member 3112. The lifting power mechanism 35 includes a drive motor and a transmission connector 351. The drive motor may include a servo motor, and the transmission connector 351 may include a belt or a gear.

[0116] Specifically, in this embodiment, the fixing member 3112 can be fixed to the lifting power mechanism 35 via the flange. The lifting power mechanism 35 can be fixed to the process chamber. The rotating member 3111 can be connected to the drive motor via a belt or gear transmission, and is driven to rotate by the drive motor, which in turn drives the spray head 12 to rotate.

[0117] Those skilled in the art will understand that, despite the above Figures 7-10 The illustrated embodiments Figures 11-18 The illustrated embodiments, and Figures 19-21 In the embodiments shown, the rotary lifting mechanism 13 is located below the bottom 17 of the process chamber. However, these are only some non-limiting embodiments provided by the present invention, which are only used to clearly illustrate the main concept of the present invention and to provide some specific solutions that are easy for the public to implement, rather than to limit the scope of protection of the present invention.

[0118] Alternatively, in other embodiments, those skilled in the art can also move the entire rotating lifting mechanism 13 above the bottom 17 of the process chamber based on the above description, so as to achieve the same technical effect of rotating and / or lifting the spray head 12.

[0119] Alternatively, in other embodiments, those skilled in the art may, based on the above description, move one of the rotating mechanism and the lifting mechanism in the rotating lifting mechanism 13 to the top of the bottom 17 of the process chamber, while leaving the other below the bottom 17 of the process chamber, to achieve the same technical effect of rotating and / or lifting the spray head 12.

[0120] The working principle of the semiconductor device processing equipment described above will be described below with reference to some embodiments of semiconductor device processing methods. Those skilled in the art will understand that these embodiments of processing methods are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all functions or operating modes of the semiconductor device processing equipment. Similarly, the semiconductor device processing equipment is also only one non-limiting implementation provided by the present invention, and does not constitute a limitation on the executing entity and execution order of the steps in these semiconductor device processing methods.

[0121] Please refer to Figure 22 , Figure 22 A schematic flowchart of a method for fabricating a semiconductor device according to some embodiments of the present invention is shown.

[0122] like Figure 22 As shown, during the back-side deposition process on wafer 20, the processing equipment first places the wafer 20 to be processed onto the wafer support mechanism 11 in the process chamber during the wafer transfer process. Then, during the back-side deposition process, the processing equipment can raise and / or rotate the spray head 12 at least once via the aforementioned rotary lifting mechanism 13 to adjust the distance and / or deflection angle between the spray head 12 and the back side of wafer 20. This adjustment regulates the partial pressure of the process gas in different areas of the back side of wafer 20 by adjusting the distance between the spray head 12 and the back side of wafer 20, and adjusts the temperature and concentration distribution of the process gas on the back side of wafer 20 by adjusting the deflection angle between the spray head 12 and the back side of wafer 20. This avoids uneven film thickness distribution caused by uneven temperature and gas distribution around the spray head 12. Finally, in response to the completion of the back-side deposition process, the processing equipment can remove the processed wafer from the process chamber.

[0123] Furthermore, in some embodiments, the above-described at least one lifting and rotating motion can preferably be reciprocating lifting and / or reciprocating rotation. Please refer to... Figure 23 , Figure 23 A schematic diagram of a reciprocating rotation provided according to some embodiments of the present invention is shown.

[0124] like Figure 23 As shown, for the reciprocating rotation adjustment method, the deflection angle range of the rotary lifting mechanism can be 0° < θ ≤ 360°, and is preferably 90°, 180°, or 360°. During the back-side thin film deposition process, the processing equipment can select one or more reciprocating rotations according to the actual process requirements to achieve optimal film uniformity.

[0125] As an example, during the reciprocating rotation, the rotary lifting mechanism can start from the initial position O1 and rotate a first angle (e.g., 180°) in a first direction (e.g., clockwise) and then rotate a second angle (e.g., 180°) in the opposite second direction (e.g., counterclockwise) to complete one reciprocating rotation. At this time, the marker O2 returns to the initial position O1 again.

[0126] Similarly, the rotary lifting mechanism can start from the initial position O1 and rotate in a first direction (e.g., counterclockwise) by a first angle (e.g., 360°), and then rotate in the opposite second direction (e.g., clockwise) by a second angle (e.g., 360°) to complete one reciprocating rotation. At this time, the marker O2 returns to the initial position O1.

[0127] Here, the rotational speed during reciprocating rotation can be independently controlled according to process requirements. The number of reciprocating rotations M can range from M≥1, including but not limited to 10, 20, 100, etc., and is not limited here. Since the spray head 12 does not rotate continuously, the gas delivery pipeline will not become entangled due to rotation.

[0128] Furthermore, as an example, the rotary lifting mechanism can pause for a period of time after completing a rotation in the first direction, and then rotate in the opposite second direction to complete one reciprocating rotation.

[0129] Furthermore, as an example, if the first angle is not equal to the second angle, the rotary lifting mechanism can also rotate from the starting position to the first position in the first direction by the first angle in the first reciprocating rotation, and then rotate in the opposite second direction by the second angle to reach a transition position. Then, in the second reciprocating rotation, it can rotate in the first direction by the second angle, and then rotate in the opposite second direction by the first angle. In this way, the marker O2 can be returned to the starting position O1 again through a combined reciprocating method.

[0130] In addition, in some other non-reciprocating rotation embodiments, the rotary lifting mechanism 13 may rotate the spray head 12 by 90°, 180° or 360° once or multiple times only in the back deposition process to overcome the problem of uneven back film thickness caused by factors such as uneven air output from the spray head 12, uneven heating of the heating plate 14, and insufficient processing accuracy of the process chamber.

[0131] Those skilled in the art will also understand that although the present invention describes the location, structure, and operating principle of each part, module, and mechanism of the process chamber in detail, this does not necessarily mean that they belong to different embodiments. Unless there is mutual conflict or explicit exclusion, those skilled in the art can arbitrarily combine the various figures and their corresponding textual content to understand them as a corresponding complete embodiment.

[0132] In summary, the process chamber, semiconductor device processing equipment, semiconductor device processing method, and computer-readable storage medium provided by the present invention can all improve the uniformity of the film thickness deposited on the back side of the wafer by placing the spray head on the back side of the wafer and adjusting the distance and / or deflection angle between the spray head and the back side of the wafer during the back side deposition process, thereby improving the processing quality of semiconductor devices.

[0133] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0134] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A process chamber, characterized in that, include: A wafer support mechanism, located inside the process chamber, is used to support the edge of the wafer and expose the back side of the wafer; A spray head, located below the wafer support mechanism, sprays process gases onto the back side of the wafer; as well as A rotary lifting mechanism, located below and connected to the spray head, is used to lift and / or rotate the spray head during the backside deposition of the wafer to adjust the distance and / or deflection angle between the spray head and the backside of the wafer.

2. The process chamber as described in claim 1, characterized in that, The wafer support mechanism includes: An edge ring for supporting the edge of the wafer and exposing the back side of the wafer; and An edge ring support mechanism is used to fix the edge ring at a preset process height inside the process chamber during the back-side deposition of the wafer, wherein the process height is greater than the top surface height of the spray head.

3. The process chamber as described in claim 2, characterized in that, One end of the edge ring support mechanism is connected to the side wall of the process chamber, and the other end is connected to the edge ring to fix the edge ring to the process height inside the process chamber.

4. The process chamber as described in claim 2, characterized in that, One end of the edge ring support mechanism is connected to the bottom of the process chamber, and the other end is connected to the edge ring to fix the edge ring to the process height inside the process chamber.

5. The process chamber as described in claim 2, characterized in that, The process chamber also includes a wafer lifting mechanism, wherein one end of the edge ring support mechanism is connected to the wafer lifting mechanism and the other end is connected to the edge ring. During the back-side deposition process of the wafer, the wafer lifting mechanism fixes the wafer at the process height inside the process chamber via the edge ring support mechanism.

6. The process chamber as described in claim 2, characterized in that, Also includes: A heating plate, located above the wafer support mechanism, heats the wafer during back-side deposition. One end of the edge ring support mechanism is connected to the heating plate, and the other end is connected to the edge ring to fix the edge ring to the process height inside the process chamber. The process height is less than or equal to the bottom height of the heating plate.

7. The process chamber as described in claim 1, characterized in that, The bottom of the spray head is provided with a rotating shaft, one end of which is fixedly connected to the spray head, and the other end is fixedly connected to a rotating lifting mechanism located above or below the bottom of the process chamber. The rotating lifting mechanism includes: A rotating mechanism is located above or below the bottom of the process chamber and includes a stator, a rotor, and a driving component. The stator is fixedly connected to the bottom of the process chamber and is used to drive the rotor to rotate around the rotating shaft. The driving component is sleeved between the rotating shaft and the rotor and is used to drive the rotating shaft to rotate with the rotor.

8. The process chamber as described in claim 7, characterized in that, During the back-side deposition process on the wafer, the rotating mechanism adjusts the deflection angle between the spray head and the back side of the wafer by at least one reciprocating rotation from a preset starting position, first rotating in a preset first direction by a first angle and then rotating in the opposite second direction by a second angle.

9. The process chamber as described in claim 7, characterized in that, The rotary lifting mechanism also includes a lifting mechanism located above or below the bottom of the process chamber, and connected to the bottom of the process chamber and the rotary mechanism, respectively. The rotating mechanism further includes a connector, at least one seal, and a telescopic tubular assembly. The connector has a sliding groove, and the driving member extends into the sliding groove to slidably connect to the connector. The telescopic tubular assembly is sleeved around the rotating shaft, and its two ends are respectively sealed to the bottom of the process chamber and the connector. At least one seal is sleeved around the driving member, and its two ends are respectively connected to the connector and the lifting mechanism.

10. The process chamber as described in claim 9, characterized in that, The at least one seal is selected from at least one of magnetic fluid seals, magnetic coupling seals, sealing ring seals, and vacuum isolation rings.

11. The process chamber as described in claim 10, characterized in that, At least one of the sealing elements is a magnetic fluid sealing element, which is sleeved around the periphery of the driving element and forms a magnetic fluid receiving space between itself and the outer side wall of the driving element, wherein the magnetic fluid receiving space contains magnetic fluid.

12. The process chamber as described in claim 11, characterized in that, Also includes: The purge gas guide ring has a slit channel between itself and the rotating shaft, and includes uniformly distributed exhaust holes, wherein the purge gas guide ring provides purge exhaust gas that is uniformly distributed in the circumferential direction to the process chamber via the magnetic fluid seal and the slit channel.

13. The process chamber as described in claim 11, characterized in that, The rotating mechanism also includes an air blowing device. The outer side of the connector is provided with an air inlet connected to the air blowing device. An annular air passage communicating with the air inlet is embedded in the connector. The bottom of the annular air passage is provided with multiple air outlets. The vertical distance between the air outlets and the rotating shaft is less than the vertical distance between the outer side wall of the driving member and the rotating shaft.

14. The process chamber as described in claim 9, characterized in that, The process chamber also includes a fixed support, which is located above or below the bottom of the process chamber and is fixedly connected to the bottom of the process chamber. The lifting mechanism includes a lifting bracket, a drive motor, a reducer, a threaded rod, and a threaded block. The drive motor, the reducer, and the threaded rod are connected in sequence. The reducer is also fixedly connected to the fixed bracket. The threaded rod rotates under the drive of the reducer. The threaded block is sleeved around the threaded rod to move up and down with the rotation of the threaded rod. One side of the threaded block is embedded in a guide groove on one side of the fixed bracket, while the other side is fixedly connected to the lifting bracket to drive the lifting bracket connected to the rotating mechanism to move up and down.

15. The process chamber as described in claim 1, characterized in that, The bottom of the spray head is provided with a rotating shaft, one end of which is fixedly connected to the spray head, and the other end is fixedly connected to a rotating lifting mechanism located above or below the bottom of the process chamber. The rotating lifting mechanism includes: A rotating mechanism is located above or below the bottom of the process chamber and includes a rotary motor, wherein the rotary motor is connected to the rotating shaft via a belt or gear to drive the rotating shaft to rotate.

16. A semiconductor device processing apparatus, characterized in that, include: One or more process chambers, at least one of which is the process chamber described in any one of claims 1 to 15.

17. A method for fabricating a semiconductor device, characterized in that, Includes the following steps: The wafer to be processed is placed on the wafer support mechanism in the process chamber of the semiconductor device processing equipment as described in claim 16; During the back-side deposition process on the wafer, the spray head is raised and / or rotated at least once via the rotation and lifting mechanism of the process chamber to adjust the distance and / or deflection angle between the spray head and the back side of the wafer. as well as In response to the completion of the backside deposition process, the processed wafer is removed from the process chamber.

18. The processing method as described in claim 17, characterized in that, The step of raising and / or rotating the spray head at least once via the rotary lifting mechanism of the process chamber to adjust the distance and / or deflection angle between the spray head and the back surface of the wafer includes: Starting from a preset starting position, the deflection angle between the spray head and the back surface of the wafer is adjusted by at least one reciprocating rotation, first rotating in a preset first direction by a first angle and then rotating in the opposite second direction by a second angle, until the spray head returns to the starting position.

19. A computer-readable storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed by the processor, the method for fabricating the semiconductor device as described in claim 17 or 18 is implemented.

Images